Physica status solidi: Volume 21, Number 1 May 1 [Reprint 2021 ed.] 9783112494929, 9783112494912

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plxysica status solidi

V O L U M E 21 • N U M B E R 1 • 1967

Classification Scheme 1. Structure of Solids 1.1 Alloys. Metallurgy 1.2 Solid-State Phase Transformations 1.3 Surfaces 1.4 Films 2. Non-Crystalline State 3. Crystallography 3.1 Crystal Growth 3.2 Interatomic Forces 4. Microstructure of Solids 5. Perfectly Periodic Structures 0. Lattice Mechanics. Phonons 6.1 Mossbauer Investigations 7. Acoustic Properties of Solids 8. Thermal Properties of Solids 9. Diffusion in Solids 10. Defect Properties of Solids (Irradiation Defects see 11) 10.1 Defect Properties of Metals 10.2 Photochemical Reactions. Colour Centres 11. Irradiation Effects in Solids 12. Mechanical Properties of Solids (Plastic Deformations see 10)see 10.1) 12.1 Mechanical Properties of Metals (Plastic Deformations 13. Electron States in Solids 13.1 Band Structure. Fermi Surfaces 13.2 Excitons 13.3 Surface States 13.4 Impurity and Defect States 14. Electrical Properties of Solids. Transport Phenomena 14.1 Metals. Conductors 14.2 Superconductivity. Superconducting Materials and Devices 14.3 Semiconductors 14.3.1 Semiconducting Films 14.3.2 Semiconducting Devices. Junctions (Contact Problems see 14.4.1) 14.4 Dielectrics 14.4.1 High Field Phenomena, Space Charge Effects, Inhomogeneities, Injected Carriers (Electroluminescence see 20.3; Junctions see 14.3.2) 14.4.2 Ferroelectric Materials and Phenomena 15. Thermoelectric and Thermomagnetic Properties of Solids 16. Photoconductivity. Photovoltaic Effects 17. Emission of Electrons and Ions from Solids 18. Magnetic Properties of Solids 18.1 Paramagnetic Properties 18.2 Ferromagnetic Properties 18.3 Ferrimagnetic Properties. Ferrites 18.4 Antiferromagnetic Properties (Continued

on cover three)

physica status solidi B o a r d of E d i t o r s P. A I G R A I N , Paris, S. A M E L I N C K X , Mol-Donk, V. L. B O N C H - B R U E V I C H , Moskva, W. D E K E Y S E R , Gent, W. F R A N Z , Münster, P. GÖRLICH, Jena, E. G R I L L O T , Paris, R. K A I S C H E W , Sofia, P.T. L A N D S B E R G , Cardiff, L. N É E L , Grenoble, A. P I E K A R A , Warszawa, A. S E E G E R, Stuttgart, F. S E I T Z, Urbana, 0. S T A S I W , Berlin, M. S T E E N B E C K , Jena, F. STÖCKMANN, Karlsruhe, G. SZIGETI, Budapest, J . TAUC, Praha Editor-in-Chief P. GÖRLICH Advisory Board M. B A L K A N S K I , Paris, P. C. B A N B U R Y , Reading, M. B E R N A R D , Paris, W. B R A U E R , Berlin, W. COCHRAN, Edinburgh, R. COELHO, Fontenay-aux-Roses, H.-D. DIETZE, Aachen, J . D. E S H E L B Y , Cambridge, P. P. F E O F I L O V , Leningrad, J. H O P F I E L D , Princeton, G. J A C 0 B S, Gent, J . J A U M A N N , Köln, E. K L I E R , Praha, E. K R O E N E R , Clausthal-Zellerfeld, R. K U B O , Tokyo, M. M A T Y A S , Praha, H. D. MEGAW, Cambridge, T. S. MOSS, Camberley, E. NAGY, Budapest, E. A. N I E K I S C H , Jülich, L. P A L , Budapest, M. RODOT, Bellevue/Seine, B. Y. R O L L I N , Oxford, H. M. R O S E N B E R G , Oxford, R. Y A U T I E R , Bellevue/Seine

Volume 21 • Number 1 • Pages 1 to 442, K1 to K96, and A l to A32 May 1, 1967

AKADEMIE-VERLAG•BERLIN

Subscriptions and orders for single copies should be addressed to A K A D E M I E - V E R L A G GmbH, 108 Berlin, Leipziger Straße 3 - 4 or to Buchhandlung K U N S T UND W I S S E N , Erich Bieber, 7 Stuttgart 1, Wilhelmstr. 4—6 or to Deutsche Buch-Export und-Import GmbH, 701 Leipzig, Postschließfach 160

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Schriftleiter und verantwortlich für den I n h a l t : Professor D r . Dr. h. c. P . G ö r l i c h , 102 Berlin, Neue Schönhauser S t r . 20 bzw. 69 J e n a , Humboldtstr. 26. Redaktionskollegium: Dr. S . O b e r l a n d e r , Dr. E . G u t s c h e , Dr. W . B o r e h a r d t . Anschrift der Schriftleitung: 102 Berlin, Neue Schönhauser S t r . 20. Fernruf: 4 2 6 7 8 8 . V e r l a g : Akademie-Verlag G m b H , 108 Berlin, Leipziger Str. 3—4, Fernruf: 2 2 0 4 4 1 , Telex-Nr. 011773, Postscheckkonto: Berlin 3 5 0 2 1 . — Die Zeitschrift „physica status solidi" erscheint jeweils am 1. des Monats. Bezugspreis eines Bandes MDN 7 2 , — (Sonderpreis für die D D R MDN 60,—). Bestellnummer dieses Bandes 1068/21. J e d e r B a n d enthält zwei Hefte. Gesamtherstellung: V E B Druckerei „Thomas Müntzer" B a d Langensalza. — Veröffentlicht unter der Lizenznummer 1310 des Presseamtes beim Vorsitzenden des Ministerrates der Deutschen Demokratischen Republik.

Contents Page

Review Article A . S . B O R S H C H E V S K I I , N . A . GORYUNOVA, F . P . K E S A M A N L Y , a n d D . N . N A S L E D O V

Semiconducting A^B^'CJ" Compounds

9

Original Papers E . J A H N E a n d E . GUTSCHE

R . VANSELOW

H.

STOLZ

Valence Band Structure of Wurtzite Type Crystals

57

Veränderungen an reinen Platinoberflächen durch gelöste Fremdstoffe: Beobachtungen mit dem Feldelektronenmikroskop . . . .

69

Second Order Conductivity and Nonlinear Plasma Excitation of an Isotropie Electron Gas

77

P . S . ZYRYANOV a n d V . I . OKULOV

v W.

DREYBRODT

Effect of Current Carrier Scattering on t h e Complex Dielectric Tensor

89

Temperature Dependence of Hyperfine Structure Tensors of Diatomic Halogen Centres in Alkali Halide Crystals

99

M . ALI a n d P . NAGELS

C.

HERVOUET

Evaluation of the Debye Temperature of Thorium Dioxide . . . .

113

Magnetic Field Dependence of Current Oscillations in Piezoelectric Semiconductors

117

M . JÄRVINEN a n d 0 .

INKINEN

An X - R a y Diffraction Study of Rubidium Chloride

127

On the Quasi-Harmonic Theory of Phonons

137

K . ISHIKAWA

R . LALLEMENT e t D . A . W I G L E Y

É t u d e de la variation de longueur du plutonium a par autoirradiation â 4 °K

145

J . KOBAYASHI

Optical Observation of Domain Motion in Ferroelectric B a T i 0 3 . .

151

S.

Unified Theory of Thermionic and Field Emission from Semiconductors

159

G . CHRISTOV

0 . BUDKE a n d J .

KREMPASKY

Measurement of Thermal Parameters of Thin Films and Plane-Parallel Plates Located on a Thermally Conductive Base

175

I . B . PUCHALSKA, A . SUKIENNICKI, Z . PETYKIEWICZ, a n d T . TYMOSZ

The Influence of Annealing on t h e Structure of Polycrystalline Permalloy Thin Films S. ARAJS a n d G. R .

183

DUNMYRE

A Note on the Consistency of Values of the Spontaneous of Saturation Magnetization of Polycrystalline Iron and Nickel a t 298 °K . .

191

M . R O S E N B E R G , C . T A N A S O I U , a n d V . FLORESCTJ

The Influence of the Magnetic Field on t h e Domain Structure of Ferrimagnetic Oxides with High Anisotropy Field W . P . R . G E O R G E , C . H . L . GOODMAN, H . F . S T E R L I N G , a n d R . W .

W.

SCHRÖTER

197

WARREN

A Possible New Group of Semiconducting Compounds

205

Die elektrischen Eigenschaften von Versetzungen in Germanium .

211

4

Contents Page

N . SEXER

M. F . ROSE

E f f e t s galvanomagnetiques et thermomagnetiques classiques dans l'arseniure de cadmium

225

Higher Order Elastic Constants a n d t h e E q u a t i o n of S t a t e of F.C.C. Metals

235

Y . T . CHOU a n d D . M .

S. S. SHEININ A. WEISS a n d K .

BARNETT

Stacked Screw Dislocation Arrays in an Anisotropic Two-Phase Medium

239

The E f f e c t of Systematic Reflections on t h e (110) E x t i n c t i o n Distance in Molybdenum

247

ZOHNER

Nuclear Quadrupole I n t e r a c t i o n of S t r u c t u r e of N a B F 4

23

Na a n d

U

B a n d t h e Crystal 257

J . S . ZIOMEK a n d P . B . PICKAR

K . MIKA

Optical Studies of ß-SiC

271

Die Richtungsverteilung der Frequenzen von Gitterschwingungen einer festen Wellenzahl

279

B . C. DFTTA, G. HOLTMEYER u n d J .

KAI.US

U n t e r s u c h u n g der anisotropen Abbremsung von niederenergetischen Magnesiumatomen in einem NaCl-Einkristall bei verschiedenen Temperaturen G. HOLTMEYER u n d J .

G . ELBINGER

291

KALUS

E i n f l u ß der N a h o r d n u n g u m Magnesiumverunreinigungen in Wismutschmelzen auf die Kernresonanzfluoreszenz-Ausbeute . . . .

297

On t h e Magnetocrystalline Anisotropy of Ni-Co Ferrites

303

V . NÜSSLEIN a n d U . SCHRÖDER

Calculations of Dispersion Curves a n d Specific H e a t for L i F a n d NaCl Using t h e Breathing Shell Model F . J . BRYANT a n d E .

J.

HANDEREK

309

WEBSTER

Threshold Energy for Atomic Displacement in Cadmium Telluride .

315

Electric Conductivity a n d Dielectric Absorption P h e n o m e n a Lead Zirconate Ceramics

323

U . GONSER a n d R . W .

in

GRANT

Determination for Spin Directions a n d Electric Field Gradient Axes in Vivianite b y Polarized Recoil-Free y - R a y s

331

N . F . MOTT a n d R . S . ALLGAIER

Localized States in Disordered Lattices J . A . M . SALTER a n d P .

343

CHARSLEY

The E f f e c t of Grain Size on t h e Lattice Thermal Conductivity of Copper Aluminium Alloys

357

L . M . CLAJREBROUGH, D . M I C H E L L , a n d A . P . S M I T H

E.

D.

HONDROS

P . BRÄUNLICH

A Source of Dislocations in Copper Crystals

369

Herring-Nabarro Creep Studies on t h e Self-Diffusion of I r o n in t h e Presence of Solutes

375

Light E f f e c t s on Space-Charge Controlled Currents in CdS . . . .

383

R . G E V E R S , J . VAN L A N D U Y T , a n d S . A M E L I N C K X

Two B e a m Kinematical Theory for t h e Diffraction of Electrons b y Crystals with Stacking F a u l t s

393

Contents

5 Page

F . BALIBAR e t A . AUTHIER

E t u d e théorique et expérimentale du contraste des images de dislocations G . B . ABDULLAEV, Z . A . ISKENDER-ZADE,

413

E . A . DZHAFAROVA, a n d V . E . CHELNOKOV

Study of Electron Lifetime in p-Si

423

P . S. SEREBRENNIKOV

On the Theory of Tunneling

431

V . F . ZOLOTARYOV, D . G . S E M A K , a n d D . V . C H E F U R

Thermally Stimulated Currents under the Condition of P e r s i s t a n t Internal Polarization

437

Short Notes J . LEVASSEUR e t J . PHILIBERT

R.

KRISHNAN

Determination des coefficients de diffusion intrinsèques par mesure de l'effet Kirkendall

Kl

Ionic Redistribution and Anisotropy in Heat Treated NiO-Doped YIG Single Crystals

K5

A . BEHR, H . PEISL, a n d W . WAIDELICH .

.

.

X - R a y Production of Vacancies in KCl a t Low T e m p e r a t u r e s . . . .

K9

J . TOBISCH a n d W . H A S E

Structure Investigations of TWO Uranium Nitrides U2N 3 + x J.

STEINERT

. . . .

Kll

Induced Uniaxial Magnetic Anisotropy of Fe-Al Alloys at Low Concentrations K13

A . A . K A M I N S K I I , Y U . K . VORONKO, a n d V . V . O S I K O

Mixed Systems on the Basis of Fluorides as New Laser Materials for Quantum Electronics. The Optical and Emission Parameters . . . K17 A . A . K A M I N S K I I , K H . S . BAGDASAROV, a n d L . M . B E L Y E V

Analysis of the Optical Spectra and Stimulated Radiation of Y 3 Al 5 O l 2 -Nd 3 + Crystals

K23

J . BOUGNOT, E . M O N T E I L , a n d C . L L I N A R E S

R.A.FRENCH

Diffusion and Solubility in Gallium Antimonide

K31

Type-1 Superconductivity in Molybdenum

K35

N . KRISTOFFEL a n d P . KONSIN

Pseudo-Jahn-Teller Effect and Second Order Phase Transitions in Crystals K39 A . N . GEORGOBIANI a n d V . I . S T E B L I N

Electroluminescence of ZnS-Cu 2 S Heterojunctions

K45

A . N . GEORGOBIANI a n d V . I . STEBLIN

Optical and Electrical Characteristics of p-n Junctions in Zinc Sulfide K49 J . TRYLSKI

Energy of the Donor Ground State in CdS, CdSe, and ZnO

I . B . PUCHALSKA a n d A . SUKIENNICKI

On the Temperature Dependence of the Domain Structure

K53

K57

6

Contents Tage

Z . A . DEMIDENKO a n d V . S. MASHKEVICH

Indirect Optical Transitions at the Centre of the Brillouin Zone. . . K59 L . MÜLLER a n d Y . MIHAI

Absorption of Amorphous Se Thin Layers Doped with Bi and Zn . . K65 R . C. R A U a n d K . LACETIELD

Microhardness of Irradiated Beryllium Oxide

K69

A . K Ö T H E a n d P . SCHLÄT

Recovery of Deformed Niobium and Tantalum Degassed in UltraHigh Vacuum K73 A . C. PAPADAKIS

On the Measurement of Carrier Mobilities in Insulators Using Transient Space-Charge Perturbed Currents K77 A . A . ADAMENKO a n d I . J .

DEKHTYAR

Effect of Plastic Deformation on the Absolute Thermopower of «-Brass

K81

A . BUBEWICZ, D . KULGAWCZUK, a n d A . SZYTULA

Internal Magnetic Field in a-FeOOD

K85

G . G E T O V , P . S I M I D T C H I E V A , M . N I K I F O R O V A , a n d R . A N D R E YTCIHIN

Effect of Seme Elements on the Optical Absorption Edge of Vitreous AS2S3 K87 V . K . BASHENOV, S . P . FEDOTOV, a n d V . A . PRESNOV

On Deep Acceptors in Iron-Doped Gallium Arsenide

K91

Prc-printed Titels and Abstracts of papers to be published in this or in the Soviet journal ,,®H3HKaTBep;uoro Tejia" (Fizika Tverdogo Tela)

A1

Contents

7

Systematic List Subject classification: 1.2 1.3 1.4 2 3.1 3.2 4 5 6 6.1 8 9 10 10.1 11 12 12.1 13 13.1 13.3 13.4 14 14.1 14.2 14.3 14.3.2 14.4 14.4.1 14.4.2 15 16 17 18 18.1 18.2 18.3 18.4 19 20 20.1 20. 2 20.3 21 21.1 21.1.1 21.5 21.6 21.7 22

•

Corresponding papers begin on the following pages (pages given in italics refer to the principal subject classification): K39 69 183 297, 343 9, 205 9, 205, 257 239, 357, K57 9, 127, 247, 257, 271, Kll 113, 137, 271, 279, 309, 357, K39, K59 291, 297, 331, K85 9, 113, 175, 235, 309, 357 375, Kl, K31 9, 211, 239, 331, 393, 413, K5, K9, K31 69, 369, 375, K13, K73, K81 145, 291, 297, 315, K9, K69 113, 145, K69 235 77, 127, 331, K93 9, 57, 225, 271, K35 159 99, 211, 331, 343, 383, 423, 437, K23, K53, K65, K87, K91 77,89 145 K35 9, 117, 205, 211, 225, 423, 445, K31 431, K45. K49 89, 323, K77 383, 423, 437, K77 151, 323, K39 9, 225, K81 9, 383, K49 9,159 9 331 183, 191, K13, K57 197, 303, K 5 331, K85 99, 257, K5, K91 77 9, 271, K17, K23. K59, K65, K87 K17, K23 315, 383, K17, K23, K45, K49 235, 247, K35, K73 191, 235, 303, 357, 369, K l , K81 183, 191, 375, 393, K l , K13, K57 145 69, 235 205,297 159, 331, 437, K l l , K59, K87

22.1.1

211

22.1.2

413,423

8 22.1.3 22.2.1 22.2.3 22.3 22.4 22.4.1 22.4.2 22.4. 3 22.5.2 22.6 22.7 22.8

Contents K65 117, K 9 1 175, K31 271 57, K53 57, 383, K45, K49, K53 57, K53 315 99, 127, 175, 291, 309, K 9 113, 197, 323, 393, K 6 9 205, 225 9, 257, K17, K23, K85

Contents of Volume 21 Continued on Page 445

phys. stat. sol. 21 (1967)

Author Index G . B . ABDULLAEV A . A . ADAMENKO J . P . AGRAWAL M. ALI M . I . ALIEV Z . A . ALIYABOVA R . S . ALLGAIER S . AMELINCKX R . ANDREYTCHIN C. ANGHEL S . ARAJS D . G . ARASLI G . A . ASADOV B . M . ASKEROV A . AUTHIER M . AVEROTJS

423,461 K81 679 113 643 461 343 393 K87 601 191 643 461 K155 413 665

K H . S . BAGDASAROV F . BALIBAR D . M . BARNETT V . K . BASHENOV A . BEHR L . M . BELYEV D . M . BERCHA K . C. A . BLASDALE K.W.BOER Y U . A . BOGOD A . BONNOT A . N . BORETS A . S . BORSHCHEVSKII G . BOUGNOT J . BOUGNOT P . BRAUNLICH F . J . BRYANT 0 . BUDKE 1. BUNGET A . BTJREWICZ K . H . J . BTTSCHOW

K23 413 239 K91 K9 K23 769 649 K145 797 525 769 9 665 K31 383 315 175 K131 K85 593

M . S . R . CHARI P . CHARSLEY V . E . CHELNOKOV D . V . CHEPUR Y . T . CHOU S . G . CHRISTOV L . M . CLAREBROUGH A . CLEMENT N . CLEMENT F . CONSTANTINESCU P . COULOMB E . CRUCEANU H . CURIEN

K127 357 423 437 239 159 369 K97 K97 K151 K97 557 K163

M . DAMODAR-PAI B . DAYAL I . J . DEKHTYAR D . DEMCO Z . A . DEMIDENKO I. DIZSI

819 661 K81 K151 K59 K121

Z . DIMITRIJEVI6 W . DREYBRODT G . B . DUNMYRE G . A . DUSSEL B . C. DUTTA F . DWORSCHAK E . A . DZHAFAROVA

K163 99 191 K145 291 741 423

G . ELBINGER V . V . EREMENKO G Y . ERLAKI

303 797 K121

J. S. A. L. V. R. G.

593 K91 K179 627 197 K35 789

F . FAST P . FEDOTOV R . FERCHMIN FIERMANS FLORESCU A . FRENCH N . FURSEY

F . M . GASHIMZADE W . R . P . GEORGE A . N . GEORGOBIANI G . GETOV R . GEVERS P . B . GHATE U . GONSER C. H . L . GOODMAN N . A . GORYUNOVA L . GOUSKOV R . W . GRANT K . H . GUNDLACH N.P.GUPTA E . GUTSCHE I . GUTZOW J . HAADEREK W . HASE G . HELDMANN R . HERRMANN C. HERVOUET J . HESSE V . HIZHNYAKOV G . HOLTMEYER E . D . HONDROS M. HULIN P . HUMBLE

K155 205 K45, K49 K87 393 507 331 205 9 619 331 575 661 57 683 323 KLL 575 703 117 495 755 291,297 375 607 733

874 0. K. Z. V.

INKINEN ISHIKAWA A . ISKENDER-ZADE G . IVANOV

E . JAHNE M . JÄRVINEN Ö. J E C H W . A . JESSER J . KACZÉR D . K . KAIPNAZABOV V . P . KALASHNIKOV J . KALUS A . A . KAMINSKII M . KARRAS F . J . KEDVES F . KELEMEN R . KELLY F . P . KESAMANLY L . KESZTHELYI L . P . KHIZNICHENKO M . KLESNIL J . E . KNAPPETT J . KOBAYASHI K . M . KOLIWAD V . K . KONIUKHOV P . KONSIN A. KÖTHE S . KRASNICKI J . KREMPASKÌ R . KRISHNAN N . KRISTOFFEL P . F . KBOMER D . KUHLMANN-WILSDORF H . KUHNERT L . A . KULEVSKII D . KULGAWCZUK K . LACEFIELD R . LALLEMENT J . VAN LANDUYT G . LAUTZ G . LECOY J . LEVASSEUR C. LLINARES A . F . LUBCHENKO R . LÜCK P . LUKAS M . LUPULESCU S. V. J. D.

I . MASHAROV S . MASHKEVICH MERTSCHING MICHELL

Author Index 127 137 423 789 57 127 481 533 635 805 775 291,297 K17, K23 487 K183 557 451 9 K121 805, 811 717 K99 151 507 K107 K39 K73 K163 175 K5 K39 805,811 . . . . 533, 545 K171 KL07 K85 K69 145 393 K139 619 KL 619, K 3 1 785 671 717 601 747 K59 K167 369

Y . MIHAI K . MIKA A . MILOJEVIÖ E . MONTEIL N . F . MOTT H.MÜHE L . MÜLLER P . MÜLLER

K65 279 KL63 K31 343 K L 15 K65 693

P.NAGELS D . N . NASLEDOV N . S . NATARAJAN A. NEDA D . NICULESCU M . NIKIFOROVA V . NÜSSLEIN

113 9 K127 557 557 K87 309

Y. V. E. S.

I . OKULOV V . OSIKO OTENYAZOV J . T . OWEN

A . C. PAPADAKIS H . PEISL M . PERINOVA Z . PETYKIEWICZ K . - H . PFEFFER J . PHILIBERT P . B . PICKAR H . PINK J . POLAR M . POLCABOVÄ A . POLICEC V . A . PRESNOV A . M . PROKHOROV I . B . PUCHALSKA R . C. R A U J . - P . ROPE M . F . ROSE M . ROSENBERG B . F . ROTHENSTEIN A . L . RUOFF H . RZÄNY K . E . SAEGER J . A . M . SALTER F . SCHLÄT P . SCHNUPP U . SCHRÖDER W . SCHRÖTER M . SCHULZ H . SCHUSTER D . G . SEMAK

89 K17 805 K99 K77 K9 K103 183 837, 857 KL 271 KILL 581 635 601 K91 K107 183, K 5 7

197,

K69 517 235 K131 601 507 K163 671 357 K73 567 309 211 K139 741 437

Author Index P . S . SEREBRENNIKOV

431

N. SEXER

225

S . S . SHEININ

247

J . A . SIGLER P . SIMIDTCHIEVA

545 K87

R . SITTIG A . P . SMITH

K175 369

I . L . SOKOLSKA YA I . M . STAKHYRA V . I . STEBLIN J . STEINERT H . P . STERLING H . STOLZ H . W . STREITWOLF A . SUKIENNICKI E . SUONINEN V . I . SYUTKINA

789 K45,

769 K49 K13 205 77 K167

183, K 5 7 487 465

A . SZYTULA

K85

S . TAKA.CZ C. TANÀSOIU

709 197

I . TEHVER J . TOBISCH J . TODOROVIC S . TOSCHEV K . D . TOVSTYUK

755 KLL K163 683 769

J . TRYLSKI T . TYMOSZ R . VANSELOW J . VENNIK

875 K53 183 69 627

K . M . VAN V L I E T

819

Y U . K . VORONKO

K17

V U DINH K Y

K159

W . WAIDELICH A . WANIC

K9 K163

R . W . WARREN E . WEBSTER

205 315

A. WEISS

257

D. A. WIGLEY

145

H . WOLLENBERG ER J . WURM

741 741

E . S . YAKOVLEVA D . YUSUPOVA

465 805

A . ZAEEBA J. K. V. L.

S . ZLOMEK ZOHNER F . ZOLOTARYOV G . ZOTOVA

P . S . ZYRYANOV

K135 271 257 437 805 89

Review

Article

phys. stat. sol. 21, 9 (1967) Subject classification: 14.3; 3.1; 3.2; 5 ; 8; 10; 13.1; 15; 16; 17; 18; 20.1; 22.8 Physico-Technical Institute "A. F. Ioffe", Academy of Sciences of the USSR, Leningrad (a) and Institute of Physics, Academy of Sciences of the Azerbaidzhán SSR, Baku (b)

Semiconducting AnBIVCa Compounds By A . S. BORSHCHEVSKH (a),

N . A . GORYÜNOVA (a),

a n d D . N . NASLEDOV

F . P . KESAMANLY

(b),

(a)

Contents 1.

Introduction

2. Formation

of the

compounds

2.1 General conditions for t h e f o r m a t i o n of t e r n a r y semiconducting p h a s e s 2.2 P a r t i c i p a t i o n of analogous elements in t h e f o r m a t i o n of t e r n a r y A T [ B I V C^ compounds 3. Crystal

structure

— Atomic

4. Physico-chemical

4.1 4.2 4.3 4.4

7. Band

of the compounds

and their

melts

based on AnHIV(l'Y

compounds

structure

8. Physical

properties

CdSnAs a C d S n A s 2 - I n A s solid solutions CdGeAs a ZnSnAs 2 ZnGeAs 2 ZnSiAs 2 ZnSiP 2

9. Dependence participating 10.

order

Direct f u s i o n of t h e e l e m e n t s Quenching N o r m a l directed cooling of t h e melt Synthesis a n d crystallization f r o m solution in a melt Gas-transport method Sintering m e t h o d Zone m e l t i n g m e t h o d

S. Solid solutions

8.1 8.2 8.3 8.4 8.5 8.6 8.7

— Short-range

Chemical s t a b i l i t y a n d e t c h i n g Growth forms Melting p o i n t a n d c h a r a c t e r of melting — H o m o g e n e i t y regions Crack f o r m a t i o n

5. Preparation

5.1 5.2 5.3 5.4 5.5 5.6 5.7

arrangement

properties

of the properties of ^4nBIVC.y compounds elements in the periodic system

Conclusions References

on the position

of the

10

A. S. Borshchevskii et al. 1. Introduction n

IV

The A B C J compounds, which belong t o the crystallo-chemical group of diamond-like semiconductors, are near electronic and structural analogues of the A m B v compounds. The crystallo-chemical analogy consists in the similarity of the short-range order (the same chemical composition of the anion sublattice, tetrahedral environment) in the A m B v and A n B l v C ^ compounds. However, in the latter group of substances ordering in the cation sublattice is often observed instead of a random distribution of the A 11 and B I V atoms which replace t h e A 111 atoms. Therefore it has been assumed t h a t an improvement of the conditions for carrier transport in these substances is possible. The investigation of these substances has become thus much interesting. At present these investigations, which began at the end of the last decade almost simultaneously in the laboratories of some countries, are carried out in the USSR, Czechoslovakia, USA, German Federal Republic, England, J a p a n , and other countries. Besides fundamental properties which are common for A m B v and A n B I V CJ" compounds new interesting peculiarities of the t e r n a r y compounds are observed. For example, in some compounds great quantities of group I V elements can be dissolved. F u r t h e r it has been observed t h a t some t e r n a r y compounds can undergo a transition into the vitreous state. Some aspects of the chemistry of semiconductors, appearing at the present time, stimulate the interest in the chemical composition and structure of A n B I V C J compounds, i.e. in phases which are intermediate between tetrahedral and octahedral [1]. Moreover, the special combination of many physical and physico-chemical properties in these substances differing from those of previously known semiconductors makes t h e m suitable for diverse practical applications. The purpose of this paper is to analyze and generalize the large amount of experimental material on the synthesis, the preparation of single crystals, and the physical and physico-chemical properties of these t e r n a r y semiconductors. 2. Formation of the compounds 2.1 General

conditions

for the formation

of ternary

semiconducting

phases

Owing to the similarity of short-range order all compounds with t e t r a h e d r a l atomic arrangement are called diamond-like. This large family can be subdivided with respect to the average electron concentration. Compounds with four valence electrons per atom are regarded as normal tetrahedral phases. The normal tetrahedral compounds A n B I V C J crystallize in very similar structures derivable from the wurtzite or sphalerite structure by substituting one type of atom in the cation sublattice of the initial structure by two different types. The difference of the substituting atoms which are structurally equivalent in the initial lattices leads to some distortion of the structure. The substitution of one type of atoms by two types of atoms leading to the same number of valence electrons per atom has been described b y Goodman on the basis of his scheme of "transverse substitution" [2], This scheme is a simple method of finding tetrahedral phases of complex composition. Later on conditions for the formation of tetrahedral compounds are obtained by Goryunova from experimental results, and are used to calculate the number

Semiconducting A n B I V C j Compounds

11

of the types of multi-component phases. These conditions lead to a definite electron concentration, e.g. four electrons in the case of normal tetrahedral phases, and to the realization of a normal valence of the atoms which is equal to the number of the group of the periodic system. For ternary compounds with cationic substitution these conditions can be written as 1. A ( l - a - y ) + B i + C y = 4 , 2. A ( l - i - y ) + B x = ( 8 - C ) y . The notation is derived from the general formula of ternary compounds: Ai_ x _yR x C y , where the capitals are not only symbols of elements but also denote the number of the valence electrons. Further, it is assumed that A < B < 0. The solutions are X

_ 8 - A - C ~ 2 (B - A ) " '

V

_ ~ Y '

From this it follows that the general formula of a ternary compound is A i with 0 < x =

g

C

I

B^C i

2

2

— < — , otherwise the ternary compound degenerates

2 (B — A)

2

into a binary one. The total number of combinations of three elements from different groups of the periodic system (seven) is ri« Lm

~

r+

Tig. l b . The same as in Fig. 1 a for

( \

UC -j—

k_p.

X ^ ktp.

k,p_

f

KP_

i

KP_

1

*

i

h ktp.k.p+

L

Ï L

u*s

U5

k_p, ktp.

k_p,

±

I > IIf Contribution to

U-} tv

~x ~r

k+p. k.pt " 5 S *

61

u5

Q,U

u,

Q

S

that cTfc.p vanishes, and