Physica status solidi / A.: Volume 89, Number 1 May 16 [Reprint 2021 ed.] 9783112494646, 9783112494639

Citation preview

plrysica status solidi (a)

ISSN 0031-8965 * VOL. 89

NO. 1 MAY 1985

Classification Scheme 1. Structure of Crystalline Solida 1.1 Perfectly Periodic Structure 1.2 Solid-State Phase Transformations 1.3 AlloysrMetallurgy 1.4 Microstructure (Magnetic Domains See 18; Ferroelectric Domains See 14.4.1) 1.5 Films 1.6 Surfaces 2. Non-Crystalline State 3. Crystal Growth 4. Bonding Properties 5. Mössbauer Spectroscopy 6. Lattice Dynamics. Phonons 7. Acoustic Properties 8. Thermal Properties 9. Diffusion 10. Defect Properties (Irradiation Defects See 11) 10.1 Metals 10.2 Non-Metals 11. Irradiation Effects (X-Ray Diffraction Investigations See 1 and 10) 12. Mechanical Properties (Plastic Deformations See 10) 12.1 Metals 12.2 Non-Metals 13. Electron States 13.1 Band Structure 13.2 Fermi Surfaces 13.3 Surface and Interface States 13.4 Impurity and Defect States 13.5 Elementary Excitations (Phonons See 6) 13.5.1 Excitons 13.5.2 Plasmons 13.5.3 Polarons 13.5.4 Magnons 14. Eleetrical Properties. Transport Phenomena 14.1 Metals. Semi-Metals 14.2 Superconductivity. Superconducting Materials and Devices 14.3 Semiconductors 14.3.1 Films 14.3.2 Surfaces and Interfaces 14.3.3 Devices. Junctions (Contact Problems See 14.3.4) 14.3.4 High-Field Phenomena, Space-Charge Effects, Inhomogeneities, Injected Carriers (Electroluminescence See 20.3; Junctions See 14.3.3) 14.4 Dielectrics 14.4.1 Ferroelectrics 15. Thermoelectric and Thermomagnetic Properties 16. Photoconductivity. Photovoltaic Effects 17. Emission of Electrons and Ions 17.1 Field Emission Microscope Investigations 18. Magnetic Properties 18.1 Paramagnetic Properties 18.2 Ferromagnetic Properties 18.2.1 Ferromagnetic Films 18.3 Ferrimagnetic Properties 18.4 Antiferromagnetic Properties (Continued

on cover three)

phys. stat. sol. (a) 89 (1985)

Author Index A . K . ABASS A. E . E . ABDEL-RAAHEIM V . N . ABKAMOV N . K H . ABRIKOSOV S . A . ABUSHOV A . B . AHMED F . S H . AIDAEV

225 K157 311 301 K191 231

D . BRÄUNIG

347

W . BREMSER CH. M . BRISKINA

653 K191

0 . BRUMMER

KL23

B . A . BUDKEVICH L . A . BURSILL

709 559

039, K 1 9 1

A . AKROUNE

271

A . CASAJUS

K35

H . ALBERS

105

P . Y . M . AL-EITHAN

225

A . CASALOT K . CERMÁK

271 K207

443

D . K . CHAKRABARTY

L . N . ALEKSANDROV A . S. ALIEV

K90

P . K . ALIEV

K99

S. A . Y . AL-ISMAIL J . A . ALONSO E. W. G. A. V.

363 73

ALTSHULER ANDRA A . ANDREEV M . ANDRIESII T. ARKHIPOV

427 K173 185 K231 293

A . ARMIGLIATO D . A . ARONOV K . ARSHAK O . K H . ASAINOV S . ÂSBRINK C . ASCHERON

533 683 363 K167 415 549

K . ATOBE S . A . AZIMOV

155 K223

T. BABANSKAJA D . BACKS A . G . BAGDOEV A . E. BAIRAMOV I . BAKER H . BAKKER G . BALCAITIS L . V . BALYKO P . I . BARANSKII O . I . BARKALOV M . BARLAND L . A . BASHKIROV R . DE B A T I S T A . BAUBEROER C. BAUER B . J . BEAUDRY I . T . BELASH L. BENES A . G . BIBILONI V . V . BIVOL M . G . BLANCHIN H . J . BLYTHE A . G . BONDARENKO T . E . BORISENKO Y U . G . BOROD KO

389 K75 499 K95 163 105 K71 601 K185 K127 249 601 191.521 123 549 K37 K127 K1 K17 K231 559 213, 581 541 K177 509

S . CHANDRA V . N . CHEBOTIN A . R . CHELYADINSKII

65 321 199 K45

G . - H . CHEN S . I . CHIKICHEV G . V . CHIPENKO J . CLAVERIE K . CSACH

K181 K115 K127 271 K153

H . D A N AN V . F . DEGTYAREVA

K173 K127

L. P. B. A. F. M. T.

DELAEY DELAVIGNETTE T . DESHMUKH N . DIDENKO DUBECKÍ DUSZAK D . DZIIAFAROV

457 521 517 K167 693 699 K95

B . V . EFREMUSHKIN

K231

A. A. EL-DALLY N . S . ENIKOLOPIAN A . L . ERZINKYAN

K157 437 K201

W . R . FAHRNER Y U . G . FARIVER F . FISCHER

347 K95 K215

M . FÖLDEAKI T H . FRAUENHEIM

581 K89

L . J . GALLEGO J . A . GARCÍA

73 237

S . GARCÍA

427

R , K . GARTIA F . GAUME H . - D . GEILER T. A . G E S B . H . GHIYA B . GHOSH

231 249 57 709 517 K83

S. O. B. P.

K9 703 K13 457

GIERLOTKA GILAR GLOWACKI F . GOBIN

Author Index

720 A . L . GOLOVIN

K5

D . GOVONI W . GRUSCHEL K . A. GSCHNEIOER, J R

E . A . KOPTELOV

467

A . KORNER

K37

G . GUBNIN

E . A . KONDRASHKINA

533

457

K5 117 133

F . P . KORSHUNOV

K227

J . KOSHY

K219

H . KRAUSE C. HAMANN

K89

A . M . HASSIB

147

G . HAUCK

451

K . HEHL

57

K . H . HERRMANN

653

C. HITZENBERGER J . HLXVKA

133 K23

C. A . HOGARTH

363

S . - H . HONG

415

J . HORAK

493, K 5 5

M. HOROBIOWSKI

K13

G . I . IBAEV

K99

A. K. R. K. M.

R. [BRAGIMOV IGAKI M. IMAMOV INIEWSKI S . IOVU

K99 673 K5 383 K231

S . ISHIO T. H . ISMAILZADE M . A . A . ISSA A . V . IVANOV L . D . IVANOVA G . D. IVLEV A . JAKUBOWSKI L . JANSA Z . JANUSKEVICIUS

K27 K133 147 K51 301 709 383,

699 493 K65, K71

B . JENICHEN G . JITSKA

79 K207

J . KALOUSOVÄ V . A . KALUKHOV

K1 K115

J . S . KANG M . G . KAPLUNOV V . KARALKEVI&UTE V. KAREL H . P . KARNTIIALER A . I . KARPECHIN VV. KÄTZEL H. V. KEER E . G . KHANCHEVSKAYA L . G . KHVOSTANTSEV

13 509 K65 K153 133 311 89 65 K231 301

K I M CHIL SUNG F . - G . KIRSCHT M. KITTLER J . KLIKORKA P. M. R. L.

I . KNIGIN KNOLL KÖHLER KOMITOV

45 389 KL,

389 K55 683 347 79 451

353

N . GOPI KRISHNA J . KRISTOFIK

K37 333, K 1 0 5

V . P . KRIVOBOKOV V . V . KRIVOLAPCHUK

K167 K61

J . KUBENA

K23

A . KUCZKOWSKI

K109

R . KUHNERT

K163

M . KUMEDA S . KUZMINSKI

K181 623

C. Y . K W O K

K39

F . LAGNEL J . VAN LANDUYT

375 457

D . LAPRAZ J . R . LASCHINSKI

249 347

C. V. E. V. A. P. R.

H . LING L . LITVINOV I . LOGACHEV M . LOGIN R . LÖPEZ-GARCIA LOSTAK LOTTI

K39 95 KL67 293 K17 493, KL, K 5 5 533

A. LÜBBES

105

J . E . MACDONALD S . A . MALYSHEV B . R . MAMATKULOV I . G . MARCHENKO J . J . MARES V . M . MAEKUSHEV J . F . MARUCCO P. T. E. A.

K137 283 683 K227 333, K 1 0 5 K191 375

MATOUSEK MATSUMORI E . MATYAS I . MELKER

S . L . MELNIKOV R . C. MERCADER P . MERLE J . MERLIN V . A . MEZRIN B . MICHEL M . MIGLIERINI R . H . MISHO J . MISKUF L . T . MIYADA-NABORIKAWA K . MOCHIZUKI W . MÖHLING A . MORIMOTO T H . MORITZ M . MÜLLER O. G . MÜLLER

493 K79 K177 K51

. . . .

283 K17 483 483 199 K163 K31 225 K153 191, 521 673 79 K181 KL 19 K89 89

721

Author I n d e x Y . MURAKAMI

457

F . RIETENBACH

A . MURASIK

571

Q. J . A . R I J K E

V . V . MURAVEVA

K201

A . A . S . MUSMÜS

147

M . NAKAGAWA

155

V . NARASIMHAN

65

653 105

A . V . RODIONOV

K61

I . M . ROMANOV

709

L . P . ROSENBERG

509

V . V . ROSSIN

K61

T . V . ROSSINA

K61

P . NEGRINI

533

L . J . V. R U I J V E N

105

A . NEIDIG

347

S H . M . RUZIMOV

KL67

H . NEUMANN

K147

S. NIESE V. V. NIETZ G. M. NIFTIEV N . NISHIMOTO

M . P . RYZHKOV

283

389 45 639,

K191 155

R . NOVOTN^

K55

K . NUSHIRO

K27

S . C . SABHARWAI

K83

M . S . SADIGOV

K95

V . S . SAENKO

311

S. N . SAHU

321

B . SAILE

K143

A . SAKALAS R. B. M. H. A. V.

OBERSCHMID OLEJNIKOVÄ S . OMAR ONODERA I . ORLOV I . OSINSKII

A. B. B. V. A. K. V.

K . PAL PALOSZ R . PAMPLIN P . PARFENOVA F . PASQUEVICH PÄTEK M . PAVLOV

243 K9 K137 K201 K17 595 601

I. PETR M . PETROV V . A . PILIPOVICH M . PIOTROWSKI J . PIQUERAS A . N . PIROGOV R . B. PODE A . D . P O G R E B N YAK E . G . PONYATOVSKII B . POUMELLEC E . D . POZHIDAEV J . PRAKASH K . PRASAD J . PRZEDMOJSKI L . N . PUCHKAREVA

703 451 709 571 237 601 517 K167 K127 375 311 K215 K39 K9 K167

S. B. T. P. U. G. A. H. V.

RADELAAR RAMA RAO M . RAZYKOV J. REDDY K. REDDY E . REMNEV REMÖN RICHTER RIEDE

263, 657 K197 K137 673 301 283

105 K37 K223 679 255, 679 K167 237 389 549, K 1 4 7

K65

M . S . SAKR O . A . SAMEDOV

K157 K133

F . H . SANCHEZ G . A . SAUNDERS V . V . SAV YAK P.SCHÄFER K . SCHMALZ W . SCHOBER J . SCHÖNEICH D . K . SCHRÖDER E . M . SCHULSON W.SEIFERT A . A . SEMENOV M . SERVIDORI K . K . SHARMA D . P . SHASHKIN

K17 K137 K185 KL 19 389 K215 389 13 163 389 117 533 403 437

D . SHAW A . V . SHEKOYAN S . Y A . SHEVCHENKO S . SHIGETOMI SHIGUOTONG T . SHIMIZU V . P . SICHKAR P . SIFFERT R . SIKDAR Y U . V . SIMONENKO P . SIMOVA D . B . SIRDESHMUKH J . SITEK A . SLAOUI V . SMID B . I . SMIRNOV DAVID J . SMITH H . SOBOTTA A . SODEIKA H . SODOLSKI S . SOLMI J . A . SOMOZA F . H . M . SPIT G . P . SRIVASTAVA

173 499 293 K79 K211 K181 311 617 243 K185 451 K37 K31 617 333, K 1 0 5 185 559 549,

K147 K71 647 533 73 105 403

722

Author Index

V . P . STELMAKII D . STOCK F . STORBECK

K45 57 89

L . STOUBAC R . STYRKOWIEC Y U . R . SUPEUN-BELEVICH Y U . N . SVESHNIKOV A . T . SZYANOK B. M. N. A.

G . TAGIEV TAKAHASHI TAKEUCHI TAZAIRT

G . VAN TENDELOO I . THUKZO V . D . TKACHEV I . TOMAS A . TOMITA V . T . TROSHCHINSKII I . O . TROYANCHUK V . V . TUROVTSEV A . P . TYUTNEV N . A . UKHIN

K105 K117 K45 K61 623 639,

K191 K27 609 271 457 693 K45 595 609 K227 601 K201 311 95

A . V . VANNIKOV V . I . VERLAN G. VILLENEUVE A . P . VOKHMYANIN J . VOTINSK Y N . WAGNER F . WALZ

311 K231 271 601 KL K123 213, 581

WANG HUAFU A. R . WEISHEIT J . P . A . WESTERVELD M. WILKENS H. WIPF

K211 K35 105 467 123

M . WOLCYRZ W U ZHONGKANG

415 K211

E . B . YAGUBSKII

509

0 . A . ZALUKOVSKAYA A . ZANI K . 2UÄNSK-Y Y U . V . ZHILYAEV V . A . ZHORIN S . P . ZHVAVYI V . F . ZOLIN

601 533 629 K61 437 709 K191

physica status solidi (a) applied research Board of Editors S. A M E L I N C K X , Mol-Donk, J. AUTH, Berlin, H. B E T H G E , Halle, K. W. BÖER, Newark, P. GÖRLICH, Jena, G. M. HATOYAMA, Tokyo, C. H I L S U M , Malvern, B. T. K O L O M I E T S , Leningrad, W. J . MERZ, Zürich, A. SEEGER, Stuttgart, C. M. VAN V L I E T , Montréal Editor-in-Chief P . GÖRLICH

Advisory Board L. N. A L E K S A N D R O V , Novosibirsk, W. ANDRÄ, Jena, E. B A U E R , Clausthal-Zellerfeld, G. C H I A R O T T I , Rom, H. CUR I EN, Paris, R. GRIGOROVICI, Bucharest, F. B. H U M P H R E Y , Pasadena, E. K L I E R , Praha, G. O. M Ü L L E R , Berlin, Y. N A K A M U R A , Kyoto, T. N. R H O D I N , Ithaca, New York, R. SIZMANN, München, J . STUKE, Marburg, J . T. W A L L M A R K , Göteborg, E. P. W O H L F A R T H , London

Volume 89 • Number 1 • Pages 1 to 416, K 1 to K118, and A l to AIO May 16,1985

A K AD E M I E - V E R L A G • B E R L I N

Subscriptions and orders for single copies should be directed in the G D R : to t h e Postzeitungsvertrieb or to the Akademie-Verlag, DDR-1086 Berlin, Leipziger Str. 3 - 4 ; in the other socialist countries: t o a book-shop for foreign language literature or t o t h e competent news-distributing agency; in the F R G and B E R L I N ( W E S T ) : to a book-shop or to the wholesale distributing agency K u n s t und Wissen, Erich Bieber, OHG, D-7000 S t u t t g a r t I . Wilhelmstr. 4 - 6 ; in the other Western European countries: to K u n s t u n d Wissen, Erich Bieber G m b H , CH-8008 Zürich, Dufourstr. 51; in USA and CANADA: to VCH Publishers, Inc., 303 N . W . 12th Avenue, Deerfield Beach, F L 33442 - 1 7 0 5 , USA; in other countries: to the international book- and journal-selling trade, to Buchexport, Volkseigener Außenhandelsbetrieb der Deutschen Demokratischen Republik, DDR-7010 Leipzig, Postfach 160, or to the Akademie-Verlag, DDR-1086 Berlin, Leipziger Str. 3—4.

Editorial Note: "physica status solidi (a)" undertakes t h a t an original paper accepted for publication before the 23rd of a n y month will be published within 50 days of this date unless the a u t h o r requests a postponement. In special cases there m a y be some delay between receipt and acceptance of a paper due to the review and, if necessary, revision of the paper.

Schriftleiter und verantwortlich für den I n h a l t : P r o f e s s o r D r . D r . h . c. P . G ö r l i c h , D D R - 1 0 8 6 B e r l i n , L e i p z i g e r S t r a ß e 3 - 4 , P o s t f a c h 1233 b z w . D D R - 6 9 0 0 J e n a , Schillbachstr. 24. Verlag: Akademie-Verlag, D D R - 1 0 8 6 Berlin, Leipziger Str. 3 - 4 ; Fernruf: 2236221 und 2236229; Telex-Nr.: 114420; B a n k : S t a a t s b a n k d e r D D R , B e r l i n , K t o . - N r . : 6836-26-20 712. Chefredakteur: Dr. H.-J. Hänsch. Redaktionskollegium: P r o f . D r . E . G u t s c h e , D r . H . - J . H ä n s c h , D r . H . L a n g e , D r . S. O b e r l ä n d e r . Anschrift der R e d a k t i o n : D D R - 1 0 8 6 B e r l i n , L e i p z i g e r S t r a ß e 3 — 4, P o s t f a c h 1233; F e r n r u f : 2 23 62 79. V e r ö f f e n t l i c h t u n t e r d e r L i z e n z n u m m e r 1620 d e s P r e s s e a m t e s b e i m V o r s i t z e n d e n d e s M i n s t e r r a t e s d e r D e u t s c h e n Demokratischen Republik. Gesamtherstellung: V E B Druckerei „ T h o m a s Müntzer", DDR-5820 Bad Langensalza. Erscheinungsweise: D i e Z e i t s c h r i f t „ p h y s i c a s t a t u s solidi ( a ) " e r s c h e i n t j e w e i l s a m 16. e i n e s j e d e n M o n a t s . J ä h r l i c h e r s c h e i n e n 6 B ä n d e zu je 2 H e f t e n . Bezugspreis: J e B a n d 200,— M z u z ü g l i c h V e r s a n d s p e s e n ( P r e i s f ü r d i e D D R : 130,— M). B e s t e l l n u m m e r d i e s e s B a n d e s : 1085/89. © 1985 b y A k a d e m i e - V e r l a g B e r l i n . P r i n t e d i n the German Democratic Republic. AN (EDV) 20735

Dr. rer. nat. HANS-JURGEN HANSCH IN H O N O U R OF HIS 50th BIRTHDAY

On the 13th of May 1985, Dr.

HANS-JURGEN HANSCH,

head of the Editorial Office and

member of the Editorial Staff of physica status solidi (a) and physiea status solidi (b) since 1971, celebrates his 50th birthday. In the sixties he has successfully worked on high-field phenomena in compound semiconductors, especially on moving highfield domains and electroluminescence. He became engagegd in the work of physica status solidi already short after its foundation and has continuously contributed to the development of the journal. He has always well deserved of the prosperity of the two series of physica status solidi and conscientiously endeavoured to fulfil his obligations. His 50th birthday is an occasion of appreciating his merits and thanking him for his unresting activity for the journal. Health and creativity may be granted to him for future.

phys. s t a t . sol. (a) 89, No. 1 (1985)

Contents Review Article

J . S . K A N G a n d D . K . SCHRODER

The Pulsed MIS Capacitor. A Critical Review

13

Original Papers and Short Notes Structure K I M CHIL SUNG a n d V . V . N I E T Z

Neutron Diffraction by a Mosaic Crystal with Large Crystallites

45

D . STOCK, H . - D . G E I L E R , a n d K . H E H L

A Model of Crystallization Processes Controlled by Temperature Pulses in Amorphous Semiconductors (I)

57

V . NARASIMHAN, H . V . K E E R , a n d D . K . CIIAKRABARTY

Structural and Electrical Properties of the LaCoi —¡tMn^Oj and LaCoi -^Fe^C^ Systems

65

L . J . GALLEGO, J . A . SOMOZA, a n d J . A . ALONSO

Liquidus Curves of Eutectic N a - K and Na-Cs Systems from Semiempirical Theories of Mixtures

73

B . J E N I C H E N , R . K O H L E R , a n d W . MOHLING

Double Crystal Topography Compensating for the Strain in Processed Samples

79

O . G . M U L L E R , W . K A T Z E L , a n d F . STORBECK

Determination of Sulphur Coverages on F e ( l l l ) by Means of Quantitative Auger-Electron Spectrometry

89

L . B E N E K , J . V O T I N S K Y , P . L O S T A K , J . KALOUSOVA, a n d J . K L I K O R K A

Cobaltocene Intercalate of the Layered SnSe,

K1

A . L . GOLOVIX, R . M . IMAMOV, a n d E . A . K O N D R A S H K I N A

Absolute Measurements of Lattice Spacings in Surface Layers of Crystals

K5

J . P R Z E D M O J S K I , S . G I E R L O T K A , a n d B . PALOSZ

X-Ray Thermal Investigations of Cadmium Iodide Single Crystals

K9

6

Contents

B . GLOWACKI a n d M . HOROBIOWSKI

Influence of Temperature of Diffusion Growth and Morphology of Nb 3 Sn Superconducting Layer on the Value of the Pinning Force K13 P . H . SANCHEZ, R . C . M E R C A D E R , A . F . P A S Q U E V I C H , A . G . B I B I L O N I , a n d A . R . LOPEZ-GARCIA

The Influence of Particle Sizes on the Oxidation Kinetics of AgSn Alloys Studied b y Mossbauer Spectroscopy KI7 J . KUBENA a n d J . HLAVKA

Space Correlation of Microdefects with Recombination of Excess Carriers in CZ-Si K23 M . TAKAHASHI, K . NUSHIKO, a n d S . ISHIO

Formation of the F.C.C. Phase in Fe-C Alloys by Rapid Quenching . . . K27 J . SITEK a n d M . MIGLIERINI

Mossbauer Spectroscopy on Amorphous Fe x Niso-a;B 20 after Neutron Irradiation K31

Lattice A.

properties

CASAJTTS a n d A . R . W E I S H E I T

A New Method for Measurement of Stress in the Neighbourhood of Window K35 Edges in Multiple Layers N . GOPI KRISHNA, D . B . SIRDESHMUKH, R . RAMA RAO, B . J . BEAUDRY, a n d K . A . GSCHNEIDITER, J R .

X - R a y Debye Temperature of Ytterbium

Defects,

atomistic

K37

aspects

V . L . LITVINOV a n d N . A . U K H I N

Fast-Neutron Radiation Damages in Heavily Doped p-Silicon F . H . M . SPIT,

H . ALBERS,

A . LUBBES, Q. J . A . R I J K E ,

95

L . J . v . RTTIJVEN, J . P . A . W E S T E R -

VELD, H . BAKKER, a n d S . RADELAAR

Diffusion of Antimony ( 126 Sb) in Polycrystalline Silicon

105

E . A . KOPTELOV a n d A . A . SEMENOV

Instability Conditions for Spatially Homogeneous Void Distribution in Irradiated Metals

117

A . BAMBERGER a n d H . W I P E

H and D Diffusion in V and Nb in the Presence of a Temperature Gradient

123

C. HITZENBERGER, H . P . KARNTHALER, a n d A . KORNER

Contrast Analysis of Intrinsic and Extrinsic Stacking Faults in H.C.P. Cobalt

133

Contents

7

A . M . H A S S I B , A . A . S . MTTSMTJS, a n d M . A . A . I S S A

Conduction Electron Spin Resonance of Blue Sodalite

K . A T O B E , N . NISHIMOTO, a n d M . NAKAGAWA

Irradiation-Induced Aggregate Centers in Single Crystal AI 2 0 3

147

155

I . B A K E R a n d E . M . SCHULSON

D.

SHAW

The Effect of Temperature on Dislocation Structures in Ni3Al

163

The Chemical Diffusion of In in Hgo.8Cd0.2Te

173

G . A . A N D R E E V a n d B . I . SMIRNOV

Effect of Plastic Deformation on the Density of Mg-Doped LiF Crystals

185

L . T . MIYADA-NABORIKAWA a n d E . DE B A T I S T

Low-Temperature Internal Friction Peaks in Pure Zirconium Deformed at 300 K

191

V . N . CUEBOTIN a n d V . A . MEZRIN

Ordering of Defects. Thermodynamic and Transport Properties of Solid Oxide Electrolytes with a Fluorite Structure 199

C . H . L I N G , C . Y . K W O K , a n d K . PRASAD

Relative Hydrogen Content in Plasma-Enhanced CVD Silicon Nitride Films: Substrate Temperature Dependence and Effect of Thermal Annealing K39

V . F . STELMAKH, Y U . R . S U P R U N - B E L E V I C I I , V . D . T K A C H E V , a n d A . R . C H E L Y A D I N S K I I

Diffusion of Boron Implanted into Silicon

K45

A . V . IVANOV a n d A . I . M E L K E R

Interatomic Bond Rupture in the System of Two Coupled Anharmonic Chains with a Weak Interaction K51

P . L O S T A K , R . NOVOTNY, J . HORAK, a n d J . K L I K O R K A

Properties of Sb 2 Te 3 Single Crystals Doped with T1 Atoms

K5o

Magnetism H. J . BLYTHE and F .

WALZ

The Magnetic Relaxation Spectrum of Plastically Deformed Non-Oriented Iron-Silicon Steel in the Temperature Range 200 to 800 K

213

8

Contents

Extended

electronic

states

and

transitions

A . K . ABASS, F . Y . M . A L - E I T H A N , a n d R . H . MISHO

Indirect Electronic Transitions in Single Crystals of Triglycine Sulfate 225

Localized

electronic

states

and

transitions

A . B . AHMED a n d R . K . GARTIA

Application of the Fractional Glow Technique in the Analysis of a Complex Thermoluminescence P a t t e r n 231

J . A . GARCIA, A . R E M O N , a n d J . P I Q U E R A S

Annealing-Induced Changes in the Photoluminescence of Deformed CaO Single Crystals

237

R . SIKDAR a n d A . K . P A L

E P R Studies of Dimensionality in Copper Calcium Acetate Hexahydrate

243

D . LAPRAZ, F . GAUME, a n d M . BARLAND

On the Thermoluminescent Mechanism of a Calcium Fluorapatite Single Crystal Doped with M n 2 t 249

U. K.

REDD Y

R . OBERSOHMID

Electrical and Optical Properties of Non-Crystalline As-Se-Cd Thin Films

255

Absorption Centers of Bi 12 GeO 20 and Bi 12 SiO 20 Crystals

263

A . A K R O U N E , J . C L A V E R I E , A . T A Z A I R T , G . V I L L E N E U V E e t A . CASALOT

Propriétés structurales, magnétiques V i - s M s O z - ^ * (M = Mg, Ni)

et

électriques

des

oxyfluorures 271

Y U . V . Z H I L Y A E V , V . V . K R I V O L A P C H U K , A . V . R O D I O N O V , V . V . R O S S I N , T . V . ROSSISTA, a n d Y u . N . SVESHNIKOV

The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique

K61

Z . JANUSKEVICIUS, V . KARALKEVICIUTÉ, a n d A . SAKALAS

The Nature of Acceptor Centres in Zinc and Cadmium Diphosphide . . . .

K65

G . B A L C A I T I S , Z . JANUSKEVICITTS, a n d A . S O D E I K A

On the Nature of Energy Levels in ZnGeP 2

K7I

Contents

9 Axial A M = ¿ 3 and Cubic Spectrum of Mn 2 + in ZnS

D . BACKS

Am =

± 1

Forbidden Transitions in the

E P R

S . SHIGETOMI a n d T . MATSUMORI

Photoluminescence Spectra of Si-Implanted GaAs

Electric

K75

K79

transport

V. I . OSINSKII,

S . A . MALYSHEV, S . L . MELNIKOV, a n d M . P . RYZHKOV

Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes

283

V . I . ARKHIPOV, V . M . LOGIK, a n d S . Y A . SHEVCHENKO

Effect of Multiple Trapping on Photoreceptor Discharge Characteristics under the Condition of Surface Carrier Generation 293

L . G . KHVOSTANTSEV, A . I . ORLOV, N . K H . ABRIKOSOV, a n d L . D . IVAKOVA

Kinetic Properties and Phase Transitions in Sb 2 Te 3 under Hydrostatic Pressure up to 9 G Pa ~

301

A . P . T Y U T N E V , V . S . SAENKO, V . N . ABRAMOV, Y . P . SICHKAR, A . I . K A R P E C H I N , E . D . POZHIDAEV, a n d A . V . VAKNIKOV

Dose Effects in Transient Radiation-Induced Conductivity in Polymers

311

S . CHAXDRA a n d S . N . SAHU

Electrodeposited Tungsten Selenide Films. I I . Optical, Electrical, Electrochemical Characterization and Photoelectrical Solar Cell Studies . . 321

J . K R I S T O F I K , J . J . MARES, a n d V . SMID

The Effect of Pressure on Conductivity and Permittivity of As 2 Te 3 -Based Glasses 333

W . R . FAHRNER , J . R . LASCHINSKI, D . BRAUNIG, M . KNOLL, a n d A . NEIDIG

H.

KRAUSE

Damage Profiles after 50 to 500 MeV Ion Implantation as Deduced from Thyristor Leakage Currents

347

Trap Induction and Breakdown Mechanism in SiO, Films

353

S . A . Y . A L - I S S I A I L , K . A R S H A K , a n d C . A . HOGARTH

Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of Si0/Nb,0 5 and Nb 2 0 5 363

B . P O U M E L L E C , J . F . MARUCCO, a n d F . L A G N E L

Electron Transport in Ti02—% at Intermediate Temperatures 300 K < T < < 1500 K 375

10

Contents

S. C. SABHABWAL a n d B . GHOSH

Electrical Conductivity of N H 4 H 2 P 0 4 Single Crystal

K83

M . MÜLLER, TH. FRAUENHEIM, a n d C. HAMANN

Peierls Transition and Fluctuation Conductivity in Thin Lead-Phthalocyanine (PbPc) Films K89 YTJ. G . F A R I V E R , A . I . BAIRAMOV, T . D . D Z H A F A R O V , a n d M . S . SADIGOV

The Effect of Substrate on the Electrical Properties of As2S3 Films . . . .

K95

G . I . I B A E V , A . I . IBRAGIMOV, A . S . A L I E V , a n d F . K . A L I E V

Photoconductivity of Te-Se-Au and Te-Se-Cd Structures

Device-related

K99

phenomena

A . JAKUBOWSKI a n d K . INIEWSKI

Technical Method of Determination of the Interface Trap Density

. . .

383

K . SCHMALZ, F . - G . K I R S C H T , S . N I E S E , I . B A B A N S K A J A , M . K I T T L E R , H . R I C H T E R , J . SCHÖNEICH, a n d W . S E I F E R T

On the Intrinsic Gettering in Cu-Contaminated Cz-Si

389

K . K . SHARMA a n d G . P . SRIVASTAVA

Barrier Height and Its Instability in Al-Ultrathin Si0 2 -n/p-Si Devices J . J . MARES,

V . S M I D , J . K R I S T O F I K , a n d L . STOURAC

Short-Pulsed Alloying of Contacts on GaAs A.

403

KUCZKOWSKI

K105

Photoelectrochemical Solar Cells with Semiconducting Polymers Prepared by Modification of Polyvinylchloride PVC and Polytetrafluorethylene PTFE KI09

Errata S. ÂSBRINK, M . W o t C Y R Z , a n d S . - H . HONG

E r r a t u m t o : X-Ray Bond-Type Diffractometer Investigations on V 3 0 5 in the Temperature Interval 298 to 480 K Including the Phase Transition Temperature Tt = 428 K

415

V . A . KALUKHOV a n d S. I . CHIKICHEV

E r r a t u m t o : The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide K115 R.

S T YRKOWIEC

E r r a t u m to : The Interaction between Moving Domain Walls in Rochelle Salt Crystals

K117

Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) Al

Contents

11

Systematic List Subject classification: 1.1

Corresponding papers begin on the following pages (pages given in italics refer to the principle subject classification): 79, 263, K9

1.2

57, 65, 271, 301, 415, K89

1.3

K17, K27, K31

1.4

45, 79, 117, 133, 163, 389, Kl, K13, K23

1.5

K39

1.6

89, K5

2

57, 73, 255, 333, 363

3

57

5

K17, K31

6

225, K37

8

73, 415, K9, K37

9

105, 123, 173, K45

10.1

123, 133, 163, 191, 213

10.2

79, 105,155,185, 199, 389, K35, K39, K45, K51, K55, K79, K115

11

95, 117, 155, 311, 347, K31, K45, K83

12.1

191

12.2

K35, K51, K117

13.1

225

13.3

293, 383

13.4

231, 249, 255, 263, 347, 353, 375, 389, K55, K61, K65, K71, K79, K115

14

271

14.2

K13

14.3

65, 95, 249, 301, 311, 333, 375, K55, K65, K71

14.3.1

255, 363, K89, K95

14.3.2

293, 321

14.3.3

13, 283, 347, 383, 403, K95, K105, K109

14.3.4 14.4 14.4.1

353, 363 199, K83 K117 65, 301, 375

15 16 18 18.1 18.2 19 20.1 20.3

263, 283, 293, 321, K23, K99, K109 K27, K31 243, 271 213 147, 243, 363, K75 155, 225, 249, 255, 263, 321, K55 191, 231, 237, 249, K61, K79

12

Contents

21

117, K13, K17

21.1

123, 133, 163

21.1. 1

89, 213, K27, K31

21.2

73

21.4

K37

22

13, 333, K l , K39, K55

22.1

K23

22.1.2

57, 95, 105, 347, 389, 403, K35, K45

22.1. 3

K99

22.2.1

K61, K79, K105, K115

22.2. 3

K5

22.2.4

79, 283

22.3

K65, K95

22.4. 1

K75

22.4.2

321

22.4.4

173

22.5

K9

22.5.2

185

22.6

155, 237, 353, 363, 375, 415

22.6.1

199, 363

22.7

301

22.8

147, 249, 255, 263, 271, K71, K83

22.8.1

231, K115

22.8. 2

65

22.9

225, 243, 293, 311, K51, K89, K109

Contents of Volume 89 Continued on Page 41!)

Review

Article

phys. stat. sol. (a) 89, 13 (1985) Subject classification: 14.3.3; 22 Center for Solid State Electronics,

Arizona

State University,

Tempe1)

The Pulsed MIS Capacitor A Critical Review2)

By J . S . KANG and D . K . SCHRODER

Contents 1.

Introduction

2. Space-charge 3. Theory 4. Pulsed

4.1 4.2 4.3 4.4 4.5 4.6 4.7

of the non-equilibrium

region MOS

generation capacitor

techniques

Zerbst method [4] Heiman method [6] Huang method [10] Calzolari current/capacitance transient method [14, 15] Trullemans and van de Wiele method [31] Kano method [16] Rabbani method [21]

5 . Voltage

5.1 5.2 5.3 5.4 5.5 5.6 5.7

and quasi-neutral

sweep

techniques

Pierret method [12, 13] Gorban method [17] Taniguchi method [18] Lin method [22] Kaplan method [20] Tiwari method [23] Kuper and Grimbergen method [33]

6. Charge

measurement

6.1 Hofstein method [5] 6.2 Viswanathan method [37] 7.

Discussion

References

1. Introduction The generation lifetime is an important parameter in the characterization, design, and operation of many semiconductor devices. For example, the leakage currents in CMOS and p-n junction devices, transfer efficiency, dark current, noise and dynamic 1) 2)

Tempe, Arizona 85287, USA. This work was partially supported by NSF Grant ECS-82-12336.

14

J . S . K A N G a n d D . K . SCHRODER

range in CCDs and the refresh time in dynamic RAMs all depend on the carrier generation lifetime; i.e., carrier generation in the space-charge region (scr) leads to various undesirable device characteristics. In addition to being a parameter that characterizes certain device operation, it is also extensively used as a process monitor. Various methods have been developed for the determination of the generation lifetime and the surface generation velocity. They can be classified according to the kind of perturbation introduced, the quantities measured, and the evaluation of the experimental results. Most of these methods are based on the return to equilibrium of a pulsed metal-insulator-semiconductor capacitor (MIS-C) suddenly switched from accumulation toward depletion or from inversion toward depletion and on the voltage sweep technique. The MIS-C has become the most popular device for the measurement of generation lifetime because: (i) it is easily implemented because the relaxation time has the magnifier A7A/Wj built in; hence, it is possible to measure even very short lifetimes; (ii) it measures the generation current under operational conditions similar to those used in DRAMs and CCDs, for example; (iii) the sampled volume is under the operator's control since the volume is given by the gate area and the space-charge region width determined by the gate voltage. This feature is very useful and can be exploited to map a wafer laterally and also in depth. Such a control is not possible in recombination lifetime measurements because the sampled volume is proportional to the diffusion length. The concept of a pulsed MIS structure was introduced by Rupprecht [1] to study the generation properties of surface states on germanium. This was later extended to investigate the bulk semiconductor [2], A method to determine the bulk generation lifetime by time constant measurement of the capacitance response to a voltage step was developed by Jund and Poirier [3]. Zerbst [4] developed a technique which allowed both the generation lifetime, r g , and the surface generation velocity, s, to be extracted from the pulsed MOS capacitance-time curve. Hofstein [5] described a method in which the charge, Q, is measured and the lifetime is derived from the Q-t transient. The model proposed by Zerbst was used by Heiman [6] to derive an expression for the capacitance-time relationship which allowed a fast evaluation of the bulk generation lifetime. This relationship was later modified [7, 8] by using a different generation rate expression. Schroder and Nathanson [9] showed that a modified analysis must be used when surface generation is a significant component of the total carrier generation and also that it is possible to extract the surface generation velocity of a depleted surface, s0. A method to determine the generation lifetime monitoring the change of MOS capacitance as a function of time when the gate bias is pulsed from inversion into depletion was proposed by Huang [10]. An approximate expression for the generation lifetime, useful for lifetime maps of Si wafers was presented [11]. Pierret [12] developed a non-pulse MOS-C measurement technique, based on the capacitance-voltage characteristics derived in response to a linear voltage sweep initiated and maintained under inversion biases, which was modified later by Pierret and Small [13]. A method for the determination of the generation lifetime based on recording the current, I, and the high-frequency capacitance, C, during the return to equilibrium after the application of a depleting voltage step was proposed by Calzolari et al. [14], Later a more general theory, which takes into account the field-dependent carrier emission rate, was developed and it was shown how current and capacitance measurements could be used to determine the field dependence of r g [15].

15

The Pulsed MIS Capacitor

K a n o and Shibata [16] developed a method for the determination of r g and s. The method consists of measuring the transient capacitance-time response, b y applying a step voltage to MOS capacitors with different diameters. A method for determining the bulk generation lifetime and surface generation velocity by use of non-equilibrium C-U and (dCjdU) curves at linear voltage sweep conditions was developed b y Gorban et al. [17]. Taniguchi [18] developed a graphical technique to determine r g and s simultaneously. This technique is based on the high-frequency C-U characteristics derived in response to a triangular voltage sweep at different sweep rates. In most analyses it is assumed t h a t electron-hole pair generation takes place in the depleted space-charge region of effective width Wg = W — Wf, where W and Wf correspond to the instantaneous and final depletion width, respectively. R a b b a n i and L a m b [19] modified the carrier generation width using an approximation derived from the position of the quasi-Fermi levels and then calculated the generation width. It was proposed by K a p l a n [20] to use measurements of hysteresis of pulsed C-U characteristics obtained in response to bias pulses with high voltage sweep rates instead of C-t measurements for obtaining r g and s. I n this method a pulse voltage sweep of high rate (]> 104 V/s) is used instead of a triangular voltage sweep. R a b b a n i and L a m b [21] developed a method based upon empirical equations obtained for the C-t plot for the determination of r g . A high speed C-U technique using both forward and reverse C-U sweeps was developed for simultaneous determination of the generation lifetime, surface generation velocity, and the doping profile by Lin [22]. Recently, Tiwari et al. [23] modified the Zerbst method for the measurement of lifetime in MOS capacitors. In this method, the voltage applied to the gate consists of a combination of a step a n d a r a m p instead of just a step as in the case of the Zerbst method. Schroder et al. [24] developed a new technique in which both the generation and recombination lifetimes could be measured using the pulsed MOS capacitor. I t is the purpose of this paper to give a comprehensive review of the major method used today by a variety of researchers all over the world. We felt t h a t the best way to do this was to present the theory as it exists in the literature, use it to measure the parameters and then modify the theory, where appropriate. We have, in a sense, unified the various theories and compared the experimental results. When done properly, the results are surprisingly close to one another. We have also listed the strong and weak points of each method and make some recommendations at the end. One of the reasons for doing this is to address the objections occasionally encountered when discussing the pulsed MIS-C with people. The comments are typically: " t h e Zerbst data acquisition time is too long"; "the Pierret ramp technique is slow a n d the devices do not always s a t u r a t e " ; " t h e I-t, C-t method requires a current and capacitance measurement"; " w h a t is a simple technique, t h a t gives believable answers and yet can be done in a short time ?" 2. Space-Charge and Quasi-Neutral Region Generation When an MIS-C is pulsed into deep depletion, there are five generation components, shown in Fig. 1, t h a t contribute to its return to equilibrium. An instructive way to view these components is to consider each of them as a current t h a t discharges the charged capacitance, as indicated in Fig. 2. Components 1 to 3 contribute electron-hole pairs in the reverse-biased scr, while 4 and 5 originate in the quasi-neutral bulk. The scr current is [24] =

T

g

—

+ qn^A^

+ qn^As ,

(1)

16

J . S . K A N G a n d D . K . SCHRODER

Pig. I. Five generation components in a deep-depleted MIS capacitor

where W and Wf are the non-equilibrium and final (equilibrium) scr widths, r g is the generation lifetime, s0 is the surface generation velocity in the lateral portion of the scr, which is in depletion during the entire C-t transient. The surface generation component under the gate, s, varies from its maximum value s0 at t = 0 to zero at the end of the transient. A is the gate area and is the lateral scr area component. The quasi-neutral current, often referred to as saturation current, is /sat —

qn\Du

(2)

with the effective diffusion length L'n [24] Ai — L n

cosh (tx) + (sjin/Djj) sinh («) (S1LD/DD) cosh (A) + sinh (a)

(3)

determined by both the actual minority carrier diffusion length in the substrate, L n , and the surface generation velocity, slt at the bottom surface, tx is WV/LD and Z>n is the electron diffusion constant. Clearly s1 is important only when the undepleted substrate thickness, WB, is of the order of or less than Ln. If, to first order, we write the lateral surface area as = 2jzr(W — Wf), where r is the radius of the gate, then we see that components 1 and 2 are both proportional to W — W{, while the other three components are independent of the scr width. This allows the two equations to be combined as (4)

where / 1 is the scr width-dependent current, W - WF /j = qntA -

(5)

t-o

jy- a.

(sat

Fig. 2. Equivalent circuit showing the two main currents discharging the capacitor

The Pulsed MIS Capacitor

with Tg = r g / ( l + I2 =

17

The scr width-independent current is

2s0rjr).

(6)

qn^As'

with s' = s + niDn/NAL'n . Most of the non-equilibrium MIS-C generation parameter measurements allow both Tg and -s' to be determined. Generally r g is obtained from a slope of the experimental data, while s' is determined from an intercept. What should be remembered, but is sometimes forgotten, is that the parameter Tg contains both bulk and surface scr generation whlie s' incorporates scr surface generation as well as the total quasineutral region generation component. In some analyses it is assumed that s' = 0. This, as we will show, has a substantial influence on the results obtained from those analyses. Its neglect introduces a considerable error. 3 . Theory of the Non-Equilibrium MOS Capacitor

In the general case, the generation of non-equilibrium carriers can be caused by a number of mechanisms [17]: (i) thermal generation of electron-hole pairs from bulk (Gh) and surface (Gs) centers; (ii) optical generation of elcctron-hole pairs (G0); (iii) impact ionization ((?,); (iv) tunneling into surface or bulk traps (C?tun)• Accordingly, the total generation rate can be defined as a sum of these terms, taking into account the specific nature of each generation mechanism [17], G{t)

=

2 j

G M

.

m

Only the process of thermal generation is considered in this paper and for separating the surface and bulk components the following assumptions are used: (i) the generation lifetime is constant during the generation and the magnitude of the bulk scr component is uniquely determined by the generation width W — Wf. Modified generation widths are found in [15], [19], and [21]; (ii) the surface generation velocity is constant during the generation. A theory taking into account the minority carrier concentration dependence of the surface generation velocity was developed by Gorban et al. [17]. The various thermal generation components are shown in Fig. 1. These five mechanisms are the only sources of minority carriers. The back contact, aside from being a surface that can generate e-h pairs thermally, does not inject minority carriers because it is an ohmic contact. For typical silicon devices at room temperature, generation mechanisms 1 and 2 are dominant and at elevated temperatures, generation mechanisms 4 and 5 become dominant. We will now discuss the capacitance-time (C-t) transient. Consider the p-type (doping concentration NA) bulk MOS capacitor shown in Fig. 3. If the voltage that is applied between the metal and the semiconductor is changed very rapidly so that neither the charge state of the interface states can change nor an inversion layer can form, then a "deep depletion" situation occurs. At t

should be used [15], I and C in (45) are measured values and Ig should be substituted for I in (44). 4.4.2

Experiment

The experimental data are shown in Fig. 9. Although this device does not show a strongly non-linear region at high current, it does show two distinct slopes. Using the slope at low /, i.e. the data during the latter part of the C-t and I-t decay curves, we find Tg = 226 ¡xs ,

s' = 0.16 cm/s .

The lifetime value is very close to the Zerbst value while the s' number is approximately half. We will show later that the Zerbst s' is the better value. 4.4.3 Strengths and weaknesses The weakness is the fact that both capacitance and current need to be measured. This makes for a more complex test set-up, but the measurement is easily implemented. The major strengths are no lengthy data manipulation and chiefly that only the gate area must be known. The doping concentration is not required. That is a major advantage.

Fig. 9. Experimental current vs. inverse capacitance curve (T = 27 °C, A = 3.42 X 10" 3 cm 2 )

27

The Pulsed MIS Capacitor 4.5

Trullemans

4.5.1

and van de Wiele method

[31]

Theory

Since the current during the non-equilibrium capacitor decay is governed by the generation parameters in the device, it has been proposed by Trullemans and van de Wiele [31] that it should be possible to extract them from pulsed I-t measurements alone. The measured current is the sum of the displacement and generation current. B y neglecting the displacement current in the scr, the main equation becomes [31] (45 a) where r F = — (&„//) (dl/dt) evaluated at t = 0; k0 is a generation factor and 10 4 V/s, the hysteresis shown in Fig. 16 3*

36

J . S. K A N G a n d D . K . SCHRODER

Fig. 16. Capacitance-voltage response to a pulse with sloping flanks. The voltages U1 and V2 are measured at capacitance C\

Cf ¿7

U2

Ui

%

^

occurs in regions both below and above C t . It is caused by minority carriers generated during the flat part of pulse as indicated by the vertical rise of capacitance. The generated minority carrier charge cannot recombine until C > Cfb if dU/dt is high enough to " f r e e z e " it during the backward run of the voltage sweep. This hysteresis A.V = U2 — U1 is the difference between curves 2 and 1 which are parallel at least in the region from O f up to the flat band capacitance C F b and depends on i p . Curve 2' is for the case when tp is large enough for the MIS capacitance to reach C f . The minority carrier charge generated in the time interval tp causes a hysteresis of value AC7 =

.

(67)

t^ox Inserting (23), (24), and (67) into (19) gives _

dAi7

qnxK e0 (Ct

\ ,

where the pulse width f p is used instead of time t. Using (68) and the measured TJ-t and C-t characteristics where C is the capacitance at the instant before pulse decay starts (¿j in Fig. 16) it is possible to determine r'e and s'. C and A U have to be measured for different pulse widths i p . The hysteresis Ai7 is measured at a certain capacitance level C0 near CFB to provide the highest accuracy of measurements. 5.5.2

Experiment

The experimental generation parameter values vary somewhat, depending on what capacitance value is used for the A ¡7 determination. For one such value we obtained Tg = 310 jxs ,

s' = 0.16 cm/s .

These values are not very close to the Zerbst values. 5.5.3 Strengths and weaknesses A strength of this method is the fact that the doping concentration need not be known. I t has several weaknesses. A number of C-U measurements must be taken, making the measurement very time consuming. I t then requires two plots beyond the original to extract the generation parameters. Furthermore, the voltage pulse is of a nonconventional form that may not be readily available in every lab, compared to a simple voltage step or ramp used in other methods.

37

The Pulsed MIS Capacitor

Fig. 17. Capacitance-voltage response to a step voltage followed by a ramp. U1 and U2 are measured at Cy and C2, respectively

o

5.6 Tiwari 5.6.1

method

[23]

Theory

In this method, a large depletion voltage step is initially applied creating a wide scr. It subsequently decreases not only due to carrier generation but also due to a ramp gate voltage, as shown in Fig. 17. The governing equation is [23] qN K W {

(U2 -

UJ

=

(W2

-

IV,) + ( J ^ wox

+

w

t

+

w^ X

(69) where Wg = Tg RCu^\qnx is an effective generation width, and Ii is the ramp rate. From the measured plot, any two points (Glt Uj) and (C2, U2) in the transient region can be chosen (including the particular case of U2 — U1 = A £7) and (69) solved numerically by iteration to find Wg and hence rg. A computer may be used to solve it iteratively. In this method, the transient MOS capacitance time is reduced by applying a ramp voltage (rather than a step), and also the conventional C—U plot is produced after the transient is over. It is assumed that the surface generation velocity, s', is zero in the original paper. This may cause an error in the result. If an s' term were introduced in (60), r'g could not be obtained from the numerical solution by iteration because there would be two unknowns in (69) which is modified by letting Wg become Wg — s'r'g. 5.6.2

Experiment

The experimental results of this method are shown below, both for s' = 0 and for s' = 0.362 cm/s obtained from the Zerbst value. U, (V)

U2 (V)

Tg (a' = 0)

tg (s' = 0.362 cm/s)

6.25 6.25 6.25 7.5 12.5

10 12.5 17.5 15 17.5

83 115 179 175 304

101 148 235 223 422

38

J . S . R A N G a n d D . K . SCHRODER

It is obvious from these data t h a t (i) the' results are very sensitive to the voltage values at which the lifetime is evaluated and (ii) the s' value has an important effect on the Tg value. However, s' cannot be obtained from this method. 5.6.3

Strengths

and

weaknesses

The strength of this method lies in its shorter data acquisition time. Its main weakness is the variation of Tg with the choice of voltages for the calculations and the fact that the surface generation velocity is not obtained so that further errors are introduced. We do not recommend it. 5.7 Kuper and Grimbergen 5.7.1

method

[33]

Theory

Both capacitance and current are measured in this method in response to a ramp voltage. The governing equation is given as [33] C dUG/dt 1 -

-

I _

qniA{W

-

JFr)

(70)

CjC0

In the original paper a plot of the experimentally measured capacitance and current on the left side of this equation versus W gives a straight line whose inverse slope is proportional to r'g and whose intercept on the TF-axis gives WF. However, the intercept value is actually less than W F . This is misleading, because the right side of (70) should be qniA{W — W¥)/r't + qn^As' with the intercept given by W = W

T

(71)

- s'Tg .

This shows that in principle, the intercept can be used to determine s', but Wv must be known. An eassier plot is obtained by rewriting (70) as CdUJdt-I 1 -

O/O0X

= ai

s uW

'

(1 1\ 1 \ 7T-7r)zr+ \C Ct

qnxAs' .

(72)

Now the left side is plotted against (IjC — l/O f ) with the slope giving r'g and the intercept s'. A somewhat different approach is that of Ehwald and Gluck [34] in which a ramp voltage is applied to the device and the resulting current measured. Both r'g and s' can be determined and the measurement time is less than that of the pulsed or saturation-ramp measurements. Furthermore, the doping concentration need not be known. A further variation of the I-U, C-U method is t h a t of Heasell [35], Here, a constant current drives the MIS-C from accumulation to inversion with the voltage across the device being monitored. A small ac current, superimposed on the dc current, gives a measure of l / C and a plot of I/O versus I allows the generation lifetime to be extracted from the slope. 5.7.2

Experiment

A plot of (72) is shown in Fig. 18. From the slope and intercept we find Tg = 234 [as ,

s' = 0.29 cm/s .

These values are quite close to the Zerbst values.

39

The Pulsed MIS Capacitor

25

0

Fig. 18. Modified current vs. capacitance obtained by the C-U and I-U response to a voltage ramp (T = 27 °C, A = 3.42 X 10~3 cm2)

05

10

15 ¿0 25 (CflC-1)

5.7.3 Strengths and weaknesses The strengths of this method are the shorter data acquisition time because the device is ramped rather than pulse and the fact t h a t the doping concentration need not be known. Of course, the area must be known. Its weakness is the fact that both capacitance and current must be measured. 6. Charge Measurement 6.1 Hofstein method

6.1.1

[5]

Theory

This method is based on the measurement of the transient response of the MIS-C to a small step in voltage. The device is biased into heavy inversion, a small voltage step is applied and the transient charge is monitored with an electrometer. The generation lifetime is given by _qKief>ni (Cox - C f ) 2

(73)

where r R is the charge-time time constant and C/3cr is the scr voltage 0.6 V). The time constant, r R , and ratio 6'f/C0X can be determined directly from the electrometer charge measurement. The Hofstein method has been extended by Zechnall and Werner [36]. Their method requires laborious calculations and neither method has found much application. 6.1.2

Experiment

We did not t r y this method. 6.1.3 Strengths and weaknesses The method is difficult to instrument because of severe pickup and leakage problems in the measuring circuit. Moreover, if the insulator capacitor is small compared to the semiconductor capacitance, the transient wave form is hardly discernible on the oscilloscope [10]. We do not recommend it.

40

J . S . K A N G a n d D . K . SCHRODER

6.2 Viswanathan

6.2.1

method

[37]

Theory

This method also measures charge as a function of time, but is not limited to small voltage steps. I t is also applicable for non-uniform doping concentration of the substrate. The gate charge, Q ci , is measured as a function of time and the relevant equation is [37] /1 _ g^/Cox\ _ qndW - W{) (74) d0017cm~2)-

t r o n f l u e n c e . • q{Po)) observed in the H D SOS will be weaker than that in the similar bulk samples. I n the second case, even though the impurity-defect atmosphere is large in size (R as 100 nm, L « 5 x 103 nm), the fraction of the volume occupied by such dislocations is so small (/ 10~4 to 10"2) that their presence cannot explain the observed features [17]. (iii) The thickness of the investigated films (d « 2 to 4 |i.m) exceeds significantly all the characteristic lengths, such as screening length, free path of carriers, etc. (these lengths range from a tenth to several nm). Thus the size effects can be ignored. (iv) It is known that the electrophysical properties of films can change considerably over their thickness. In particular, the electrically active impurities are distributed inhomogeneously. But in the investigated films the region where these changes are significant 0.5 ij.m) is smaller than the film thickness 2 to 4 ¡j.m) and the magnitude of the inhomogeneity is small 25%). Thus, such an inhomogeneity can yield only some quantitative corrections. (v) In contrast to bulk materials the SOS films are subjected to a compression of « 6 X 108 N/m 2 . Such stresses can cause some changes in the gap width, the effective mass of carriers, the energy position of radiation defect levels [18]. In the SOS films of p-type they lead to the valence band splitting at k = 0 as well as to the effective mass of holes changing from (m*) ^ 0.5 to « 0.22 [19]. If the shift of the energy levels follows the valence band edge, its magnitude is small. As the ground levels of radiation defects in p-Si are deep [8] and the Fermi level in HD materials is near the valence band edge, the occupation of the levels remains unchanged. The above elastic stresses are homogeneous, which results from the small film thickness. The presence of their longitudinal gradients could cause a change of the rate of radiation defect accumulation. There are no distinct data about the effect of uniaxial elastic stresses on the rate of radiation defect formation. However, it is known that mechanical stresses can affect the diffusion of impurities through changing the barrier for impurity motion and the equilibrium concentration of point defects [20], But due to the small distances between the impurities which are "good" sinks for vacancies and interstitial atoms the above circumstance will cause quantitative changes rather than qualitative ones. The arguments presented above make it possible to conclude that the "specificity" of the SOS films can manifest itself in quantitative differences as compared with similar bulk materials. It is natural to assume that the observed qualitative differences in the changes of the properties of the HD SOS films due to irradiation result from the features of radiation damages produced by neutrons in HD materials.

102

V. L. Litvikov and N. A. Ukhin

The suggested model allows one to explain the complex of qualitative differences in the changes of the investigated SOS films in comparison with lightly doped bulk materials. The qualitative behaviour of the dose dependences of electrical properties is described well by (1) to (4). It follow from t h e same formulae that the change in carrier concentration can be comparable with the change in their mobility and t h e two values make a significant contribution to the resistivity change. As both the material of the impurity-defect D R ' s and the matrix material are degenerate, the properties of such regions and the matrix are weakly dependent on temperature. When the doping level grows, the m u t u a l annihilation of the P R D inside the displacement cascade decreases and the greater portion of the P R D takes part in the formation of stable complexes affecting t h e carrier removal. An evident consequence of the above fact in the H D materials consists in an increase of the initial r a t e of carrier removal, in a change of its dependence on p 0 , and in the tendency of this rate to reach the calculated number of displaced atoms as p0 grows. To calculate the number of displaced atoms we used the energy dependence of the damage cross-section D(En) given by Smith [21] and data on the neutron spect r u m in the irradiation position. For neutrons with an energy of above 1 keV the damage cross-section proved to be equal to oo D(En) = / o .ooi N (atom Si cm" 3 ) D(En) .

(9)

The total number of displacements is N

*

=

(10)

*k'

where E A is the threshold energy of displacement . The number of displacements per neutron is d

~ o=-14.1

which is quite different from our values, K = 2.9 ± 0.2 eV

and

In D'0 = 6.7 ± 1.8 .

We think our results for the activation energy for the bulk and the grain-boundary diffusion are more reliable. Our value i o r E l (2.9 eV) is only somewhat low as compared with literature data for donor diffusion in Si, while Liotard et al.'s value for E'A (0.83 eV) is much smaller (compare with [9, 10, 21 to 33]). 5.4 The dislocation

density

and diffusion

coefficient

First of all it is remarkable that dislocations are formed with such a high density during the anneal of the coarse-grained samples, and that the formation occurs particularly in grains with a specific orientation (Fig. 8). However, a similar orientation dependence is found for the formation of stacking faults during the oxidation of float-zone silicon [34]. Possibly traces of oxygen in the ampules played a role in the dislocation formation. The dislocation density estimated from etch pit countings is a factor of 2 to 3 less than the density calculated from the activity-depth profiles with the help of LeClaire's analysis. This is not an unusually large difference between etch pit counts and estimates by other techniques (like transmission electron microscopy). The value found for the dislocation diffusion coefficient, 1.0 ^ 0.3 X 10~8 cm2/s, is rather high as compared 8

physica (a) 89/1

F . H . M. SPIT e t al.

114

to the data of Dudko et al. [14], They found a value of about 0.15 x 10~8 cm2/s at 1050 °C. However, they used a value of 10 nm instead of 3 nm for the radius of dislocation diffusion pipes. Correction for this difference gives a value of about 1.7 x X 10"8 cm2/s, which, taking into account the large errors, corresponds well with our result. 6. Conclusions

For bulk diffusion of antimony in polycrystalline silicon we found rCJ.

The somewhat high values of D (as compared with literature data) are probably due to the influence of the dislocation diffusion. It is possible that the decrease of the surface diffusant concentration during the diffusion has also played a role. For grain-boundary diffusion of antimony in polycrystalline silicon we found D' = S12±To exp

—

±

(assuming a grain-boundary width of 6 nm). This value of E'a corresponds better with literature data of arsenic diffusion in polycrystalline silicon than the result of Liotard et al. [17], Autoradiography can be used successfully for measuring activity-depth profiles of distinct grains. The formation of dislocations in the coarse-grained samples did influence the depth profiles drastically. The cause of the dislocation formation could be oxidation. Acknowledgements

A. D. LeClaire is gratefully thanked for his critical comments on an earlier version of this paper. W. J. H. Schins is acknowledged for the preparation of part of the samples, P. H. v. Berge Henegouwen for performing X-ray diffractometry, A. Zwart for the preparation of numerous ampules and the Foundation for Fundamental Research on Matter (F.O.M.) and HOLECSOL for financial support. References [1] L. M. L. J. LEBLANS and M. L. VERHEIJKE, Philips' tech. Tdsch. 25, 103 (1963). [ 2 ] A . D . LECLAIRE a n d A . RABINOWITCH, J . P h y s . C 1 4 , 3 8 6 3 ( 1 9 8 1 ) . [3] A . D . LECLAIRE a n d A . RABINOWITCH, J . P h y s . C 1 5 , 3 4 5 5 ( 1 9 8 2 ) .

[4] A. D. LECLAIBE and A. RABINOWITCH, J. Phys. C 16, 2087 (1983). [5] R . T . P . WHIPPLE, P h i l . M a g . 4 5 , 1 2 2 5 ( 1 9 5 4 ) .

[6] T. SUZUOKA, Trans. Japan. Inst. Metals 2, 25 (1961). [7] T. SUZUOKA, J. Phys. Soc. Japan 19, 839 (1964). [ 8 ] D . DRIMER, P . TARANU, A . HOPNER. L . VESCAN, a n d L . NEMADA, R e p . A c a d . P o p u l a r e R o -

mine, Fiz. Stiinte Tehn. 13, 39 (1960). [9] C. S. FULLER a n d J . A . DITZENBERGER, J . a p p l . P h y s . 2 7 , 5 4 4 ( 1 9 5 6 ) .

[10] R. N. GHOSTAGORE, Phys. Rev. B 3, 397 (1971). [ 1 1 ] J . J . ROHAN, N . E . PICKERING, a n d J . KENNEDY, J . E l e c t r o c h e m . S o c . 1 0 6 , 7 0 5 ( 1 9 5 9 ) .

[12] M. 0 . THURSTON and J. TSAI, Ohio State University Research Foundation, Rep. No. 12 33 —4C, 1 9 6 2 ( u n p u b l i s h e d , s e e [10]).

[13] S. NAKANUMA and S. YAMAGISHI, J. Electrochem. Soc. Japan 36, 3 (1968). [14] G. V. DUDKO, M. A. KOLEGAEV, and V. A. PANTELEEV, Soviet Phys. — Solid State 11, 1097 (1969).

[15] S. H. SONG, S. MATSUMOTO, and T. NIIMI, Japan J. appl. Phys. 18, 2181 (1979).

Diffusion of Antimony (125Sb) in Polycrystalline Silicon

115

[16] D . A. P E T R O V , YTJ. M. SHASKOV, and I . P . A K I M C H E N K O , Dokl. Akad. Nauk SSSR 1 9 5 7 (p. 1 3 0 ) . [17] J . L. L I O T A B D , R. B I B É R I A N , and J . C A B A N É , J . Physique 43, Cl-213 (1982). [18] P . V. PAVLOV, V. A. P A N T E L E E V , and A. V. MAIOROV, Soviet Phys. - Solid State 6 , 305 (1964). [19] A. D. L E C L A I R E , Brit. J . appi. Phys. 14, 351 (1963). [ 2 0 ] A. D. L E C L A I R E , private communication. [21] K. TSUKAMOTO, Y. A K A S A K A , and K. H O R I E , J . appi. Phys. 48, 1815 (1977). [ 2 2 ] H . R Y S S E L , H . I B E R L , M. B L E I E R , G . P R I N K E , K . H A B E R G E R , and H . K R A N Z , Appi. Phys. 2 4 , 197 (1981). [23] B. S W A M I N A T H A N , K. C. SARASWAT, R. W. B U T T O N , and T. I. K A M I N S , Appi. Phys. Letters 40, 795 (1982). [24] M . A R I E N Z O , Y. K O M E M , and A. E. M I C H E L , J . appi. Phys. 55, 365 (1984). [25] W. J . ARMSTRONG, J . Electrochem. Soc. 109, 1065 (1962). [26] P. S. R A J U , N. R . K. R A O , and E. V. K. R A O , Indian J . pure appi. Phys. 2, 353 (1964). [ 2 7 ] Y . W . H S U E H , Electrochem. Technol. 6 , 3 6 1 ( 1 9 6 8 ) . [28] B. J . M A S T E R S and J . M . F A I R F I E L D , J . appi. Phys. 40, 2390 (1969). [29] T. L. C H I Ù and H. N. G H O S H , IBM J . Res. Developm. 15, 472 (1971). [30] D. P. K E N N E D Y and P. C . M U R L E Y , Proc. I E E E Letters 59, 335 (1971). [ 3 1 ] J . W O N G and M. G H E Z Z O , J . Electrochem. Soc. 1 1 9 , 1 4 1 3 ( 1 9 7 2 ) . [ 3 2 ] D . R . C A M P B E L L , K . N . T U , and R . O . S C H W E N K E R , Thin Solid Films 2 5 , 2 1 3 ( 1 9 7 5 ) . [ 3 3 ] S . O H K A W A , Y . N A K A J I M A , and Y . F U K U K A W A , Japan. J . appi. Phys. 1 4 , 4 5 8 ( 1 9 7 5 ) . [ 3 4 ] J . D I E L E M A N and T . H . G . M A R T E N S , Appi. Phys. Letters 4 0 , 3 4 0 ( 1 9 8 2 ) . (Received

September

4,1984)

E . A. KOPTELOV and A. A. SEMENOV: Spatially Homogeneous Void Distribution

117

phys. stat. sol. (a) 89, 117 (1985) Subject classification: 1.4; 11; 21 Institute for Nuclear Research, Academy of Sciences of the USSR,

Moscowl)

Instability Conditions for a Spatially Homogeneous Yoid Distribution in Irradiated Metals By E . A . KOPTELOV a n d A . A . SEMENOV

The void system being formed under irradiation is an open dissipative system. When the point defect production rate is lower than the critical one found and the dislocation density is comparatively small, inhomogeneous fluctuations of the point defect concentrations can lead to an instability of the homogeneous (random) void distribution and therefore to a spatial reorganization of voids under irradiation. CoBOKynHocTb BaKaHCHOHHbix nop, o6pa3yiomHXCH npH oSjiyiemiH, npej;cTaBJiHeT coSoft OTKpbiTyK) HHCCHnaTHBHyro CHCTeMy. B cjiynae, Korjja cKopocTb reHepanHH necjienTOB MeHbUie HeKOTOpOrO KpHTHHBCKOrO 3HaneHHH H njlOTHOCTb SHCJIOKaUIlft CpaBHHTeJlbHO Mana, Heo«HopoHHbie $jiyKTyauHH KOHqeHTpaunft To^e^Hbix ne^eKTOB Moryr npHBecTH K HeycTOHHHBOCTH oflHopojjHoro (cjiynaftHoro) pacnpeaejieHHH nop H, TCM caMWM K npocTpaHCTBeHHOft nepecTpoiiKe nop nofl oCjiyqeHneM.

1. Introduction One of the most fundamental problems of radiation physics is the void lattice formation in irradiated metals. The spontaneous transition from a random void distribution to the spatially ordered one is observed under rather long irradiation [1 to 3], i.e. in the early stage of irradiation voids are randomly distributed in space but then their reorganization takes place. Consequently this process can be considered as a process of self-organization in an open dissipative system [4, 5]. In the theoretical investigation of the void ordering kinetics by Krishan [6] the ordering was viewed mainly as non-equilibrium phase transition. In this analysis vacancy dislocation loops play a basic role in the arising structural instability of the void system. Numerical calculations showed that there is a phase transition, when the vacancy dislocation loop density is greater than the critical one. The process kinetics in dependence on the point defect production rate was not studied. The production rate characterizes the degree of the external influence on the void system and therefore on the basis of the above-mentioned community with selforganization phenomena in open dissipative systems it can be expected that there is some restriction on the point defect production rate. Corresponding conditions for the spatial reorganization of voids arising under irradiation will be obtained further. 2. Spatial Instability Analysis We suppose that initially voids are randomly distributed in space and the nucleation process is finished. Consequently no specific wavelength can be associated with the void distribution. This feature is retained in the model of the homogeneous lossy !) 60th October Anniversary Prospekt 7a, 117312 Moscow, USSR.

118

E . A . KOPTELOV a n d A . A . SEMENOV

medium. So the usual equations describing the development of swelling in irradiated metals will be considered. The set of equations may be written in the form Cw = K — yC-fiv - DyQ(Cv - G«,) - Dv the atomic volume. Under continuous irradiation the defect concentrations adjust very rapidly to the actual state of the microstructure. Therefore, the steady state homogeneous solution R0, Cy, Cf is defined as follows: K - yC?C? - DyQ(C°v - Coo) - Dy4:7iNR0(Cy - CS(R0)) = 0 , K - yC?C° - Di(rjQ + 4nNR 0 ) C? = 0 , ^

= [Dy(C°y - CS(R0)) -

(2)

DfifyRo.

To check the stability of this solution, consider the time evolution of small deviations 8C y (r, t), 8Cj(r, t), S R { r , t) from the homogeneuous steady state. The void concentration and the dislocation density are assumed to be constant because the considered void kinetics takes place when the nucleation process is finished [6], The time development of these deviations can be found by linearization of the initial equations (1) and execution of the spatial Fourier transformation. Using the adiabatic approximation for rapidly relaxing variables [4] (i.e. setting SCj = 8CV = 0) we obtain (3)

df\ D„ §C,

A SCj =

Rn

e +i S = Q =

DyDi{8

Q +Qs

+

CS(R0)*IR0 + yCfjDv

DiAQ

(4) (5)

'

yC°v k2 + yCfjDv '

8R

(6)

QsDfiî yC?

e + e. +

- A) + BSDy Z>VA - BQ

k2

+

yC?/A

i l -

fo-l)

(v -

(?)

i) e Q+(>s+k*+

yCÇ/Aj

(8)

where = 4 nNRn

r) - 1 < 1 .

We are interested in those cases, when A = (d/di) ( R 0 ) l { 8 R j R 0 ) > 0 .

(9)

119

Instability Conditions for Spatially Homogeneous Void Distribution in Metals

To simplify the calculations we introduce the parameter "

T

O

T

(10)

and consider two limiting cases: 1 and 1. In the first one the difference of the vacancy and interstitial fluxes, Dv 8CV — Di 8C it being as large as fx (see (4), (5), (7)), can be neglected. Then dS R 1 SiM Hi r , = m R;

« R, ~

d^0l 2R

°

•

(11)

From (2) we find that dR d 7?t Bo-rr^iV-l) ~dt

DVC°V - DV(CS(R0) -

« in - 1) ^

Cœ)

{\/Dfp* + 4 K y D J D , - DlQ} - Z)V(C° - C«,) = f(R0). (12)

So A is positive if C . W - Coo J p y < ^ T i

+ iK^DjDv 2y

- Da

1 +