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Smart Sensors, Measurement and Instrumentation 36
Subhas Chandra Mukhopadhyay Boby George Joyanta Kumar Roy Tarikul Islam Editors
Interdigital Sensors Progress over the Last Two Decades
Smart Sensors, Measurement and Instrumentation Volume 36
Series Editor Subhas Chandra Mukhopadhyay School of Engineering Macquarie University Sydney, NSW Australia
More information about this series at http://www.springer.com/series/10617
Subhas Chandra Mukhopadhyay Boby George Joyanta Kumar Roy Tarikul Islam •
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Editors
Interdigital Sensors Progress over the Last Two Decades
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Editors Subhas Chandra Mukhopadhyay School of Engineering Macquarie University Sydney, NSW, Australia Joyanta Kumar Roy Department of Electronics and Communications Engineering MCKV Institute of Engineering Howrah, West Bengal, India
Boby George Department of Electrical Engineering Indian Institute of Technology Madras Chennai, Tamil Nadu, India Tarikul Islam Department of Electrical Engineering Jamia Millia Islamia (Central University) New Delhi, Delhi, India
Eureka Scientech Research Foundation Kolkata, West Bengal, India
ISSN 2194-8402 ISSN 2194-8410 (electronic) Smart Sensors, Measurement and Instrumentation ISBN 978-3-030-62683-9 ISBN 978-3-030-62684-6 (eBook) https://doi.org/10.1007/978-3-030-62684-6 © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 This work is subject to copyright. All rights are solely and exclusively licensed by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Switzerland AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface
Sensors to information systems are not very different from what senses are to human beings. Just like our brains rely on the feedback from the senses to make hundreds of decisions every day, the systems need sensors to function properly, and achieve their intended objectives. The indispensability of sensors becomes even more evident when we imagine the consequences of a sensor malfunctioning, or worse yet stops working, while being part of a control system in the industry, regulators in a powerhouse, fuel flow regulation systems, or speed control module in a vehicle or autonomous vehicle, to name a few examples. And if these examples are not impactful enough, we could always imagine the smartphone without a functioning touchpad on a working day! Essentially, as we progressed through industrialization, to automation, and information-based systems, sensors for monitoring numerous parameters became inevitable. Due to the market demand, and advancements in science and technology, today, we have very high-quality sensors available for most of these applications; thanks to the great contributions of the sensor community across the world and the industry that manufactures them. The demand for miniaturized, easy to manufacture sensors that can be produced at a large scale, retaining, if not improving, the performance factors such as high sensitivity, selectivity and reliability, low cost and power consumption, and large life cycles, is very high. While this demand for perfecting the existing sensors is present, there is an ever-increasing need for new sensing functionalities, which will continue as long as the humankind exists! There are certain types of sensors, and associated sensor structures that can be used to address sensing solutions in several fields, while the manufacturing process required is simple, the power needed for sensing very low, the space required for installation minimal, and the demand for maintenance pretty much nonexistent. Interdigital sensors, the sensors utilizing the planar interdigitated electrode structures, constitute an important category among such sensors. The dimensions and the materials that make up the interdigitated electrode structure can be selected suitably, to form specific electric field patterns which help to gather information that is otherwise not feasible using the existing sensors. While this is more about the structure of the sensing element and the material employed, realizing a sensor v
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system needs other equally important units such as interfacing circuits, digitizers, processors enabling edge computing, and low power yet reliable wireless communication modules. It has also been noticed that when such sensor systems are available, our smart engineers invariably come up with novel and useful applications have not been thought of before! This book is a well thought out collation of developments in interdigital sensor structures, fabrication processes, interfacing circuits, and applications from the past two decades. It contains invited chapters from experts in the field, presenting the latest interdigital sensors, the science behind the sensing function, and captivating applications. This will help the reader to not only get updated on the latest trends and applications in this field, but also gain sufficient information and maybe even spark the curiosity to learn more and develop their very own smart interdigital sensors to serve the needs of the industry and the society better. To serve this purpose, this book has been carefully organized as detailed below. An overview of the progress of interdigital sensors, touching upon their design, fabrication, flexibility, and applications is presented in chapter “Progress of Interdigital Sensors Over Last Two Decades: A researcher’s Perspective”. This is followed by a chapter “Interdigital Proximity Sensor: Electrode Configuration, Interfacing, and An Application” on a specially designed interdigital proximity sensor to help to solve the problem of child-left behind in the car. Chapter “Fabrication of Interdigitated Sensors: Issues and Resolution” focuses on the design and fabrication aspects of the various interdigital sensors. The process has been illustrated, in detail, with the help of intriguing examples. Chapter “Design and Fabrication of Fringing Field Interdigital Sensors for Physical Parameters Measurement” presents a specially designed interdigital sensor for humidity sensing. The entire cycle of electrode design, using analytical expressions to compute the capacitance, fabrication procedures, and evaluation of the complete system is discussed in this chapter. One can always come up with an electrode design, but the important question is whether it is the best choice for a certain application. This aspect is illustrated in chapter “Optimization of Interdigitated Sensor Characteristics” through an optimal design presented to characterize a bio-sample. This chapter also discusses how in some cases, finite element analysis is helpful for the functionality test and optimization. Chapter “Epsilon-Near-Zero Microwave Sensors” discusses the possibilities of utilizing the epsilon-near-zero effect in waveguides as a sensing technology. The sensor is realized using the multilayer planar technology that enables multi-frequency measurements. Chapter “An Overview of Interdigitated Microwave Resonance Sensors for Liquid Samples Permittivity Detection” specializes further on interdigitated microwave sensors for permittivity measurements. Some of the applications presented are quite fascinating, like the one for smart health system development. In the chapter “IDC Planar RF Sensors for Dielectric Testing and Applications”, some of the theoretical aspects of interdigital microwave sensors employed in permittivity measurements are discussed. Glucose measurement is presented as a potential application. The readers from the biomedical domain will find chapters “An Overview of Interdigitated Microwave Resonance Sensors for
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Liquid Samples Permittivity Detection”, “IDC Planar RF Sensors for Dielectric Testing and Applications”, and “Biomedical Application of Interdigital Sensors” compelling. In fact, chapter “Biomedical Application of Interdigital Sensors” is based on an interdigital impedance sensor, unlike the microwave presented in chapters “Epsilon-Near-Zero Microwave Sensors” to “IDC Planar RF Sensors for Dielectric Testing and Applications”. Multiple interdigital sensors at different frequencies are employed to characterize the sample under test. The benefit of the array-based approach is exemplified through engaging examples, in chapter “Biomedical Application of Interdigital Sensors”. The applications of interdigital sensors and sensor electrode structures in biomedical sensing are continued in chapter “Fabrication of Interdigital Electrodes for Monolithic Biosensing”. Here, the fabrication of an organic field-effect transistor with interdigital contacts in the channel for monolithic biosensing is detailed. This chapter also talks about the use of finite element analysis in the sensor design and optimization. Chapter “Interdigital Sensing System for Kidney Health Monitoring” is a very interesting one. It presents an interdigital sensor to measure the Creatinine level, which is a key indicator of kidney functioning. Details of a proof-of-concept device developed, tested, and compared with a suitable reference are presented in this chapter. Chapters “Recent Advancement of Interdigital Sensor for Nitrate Monitoring in Water” and “Temperature and Humidity Compensated Graphene Oxide (GO) Coated Interdigital Sensor for Carbon Dioxide (CO2) Gas Sensing” deal with environmental monitoring. Chapter “Recent Advancement of Interdigital Sensor for Nitrate Monitoring in Water” presents the need to detect and monitor nitrates in water. This is a difficult task as multiple similar ions are present in the water. A specially designed interdigital sensor is presented for this purpose in this chapter. Its design, fabrication, characterization, and the test results are presented. Chapter “Temperature and Humidity Compensated Graphene Oxide (GO) Coated Interdigital Sensor for Carbon Dioxide (CO2) Gas Sensing” discusses an interdigital CO2 sensor designed to operate in both outdoor and indoor conditions. This offers a low-cost solution for this application. The performance of the sensor for different temperatures, humidity, and CO2 concentrations is tested, and the results are provided. Also presented are the detailed repeatability studies conducted. Surface acoustic wave (SAW) based sensors give smart ways to realize non-intrusive sensing. The interdigital electrode pattern is very common in SAW sensors. Chapter “Development of Dual-Friction Drive Based Piezoelectric Surface Acoustic Wave Actuator” talks about the integration of a piezoelectric actuator together with two interdigital stators on opposite sides. The design of the SAW motor presented is interesting. Chapters “Interdigital Sensor for IoT Applications” and “Some Applications of Interdigital Sensor for Future Technologies” give ideas on how to develop sensor systems using interdigital sensors. What are the important sub-blocks in a sensor system? How can these be optimally integrated to achieve certain goals? These are important points to know for a system building engineer. These are detailed in chapter “Interdigital Sensor for IoT Applications”. In continuation of this chapter, a brief review of the current trends, new possible
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applications of interdigital sensors and future directions are discussed in chapter “Some Applications of Interdigital Sensor for Future Technologies”. The authors have taken a special interest, in preparing their chapters, in such a way that it conveys complex ideas in a simple manner. Their valuable time and effort spent in writing the chapters based on the latest work in the research laboratories and industry have helped very much to realize a high-quality book uncovering a wide spectrum of technology and applications of interdigital sensors. We are extremely thankful to the authors for their valuable contributions and readiness to take part in this endeavor, thus leading to this very interesting and useful book for the readers. Sydney, Australia
Subhas Chandra Mukhopadhyay Guest Editor [email protected]
Chennai, India
Boby George [email protected]
Kolkata, India
Joyanta Kumar Roy [email protected]
New Delhi, India
Tarikul Islam [email protected]
Contents
Progress of Interdigital Sensors Over Last Two Decades: A researcher’s Perspective . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S. C. Mukhopadhyay, C. P. Gooneratne, and J. K. Roy
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Interdigital Proximity Sensor: Electrode Configuration, Interfacing, and An Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Abhishek Ranjan, Boby George, and S. C. Mukhopadhyay
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Fabrication of Interdigitated Sensors: Issues and Resolution . . . . . . . . . Anindya Nag, S. C. Mukhopadhyay, and C. P. Gooneratne Design and Fabrication of Fringing Field Interdigital Sensors for Physical Parameters Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . Tarikul Islam Optimization of Interdigitated Sensor Characteristics . . . . . . . . . . . . . . J. Claudel, A. L. Alves de Araujo, D. Kourtiche, M. Nadi, and A. Bourjilat
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Epsilon-Near-Zero Microwave Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . 123 Abhishek Kumar Jha An Overview of Interdigitated Microwave Resonance Sensors for Liquid Samples Permittivity Detection . . . . . . . . . . . . . . . . . . . . . . . 153 S. Kiani, P. Rezaei, and M. Fakhr IDC Planar RF Sensors for Dielectric Testing and Applications . . . . . . 199 M Jaleel Akhtar, Nilesh K Tiwari, and Greeshmaja Govind Biomedical Application of Interdigital Sensors . . . . . . . . . . . . . . . . . . . . 231 Nasrin Afsarimanesh, Ghobad Shafiei Sabet, and S. C. Mukhopadhyay Fabrication of Interdigital Electrodes for Monolithic Biosensing . . . . . . 247 Nireekshan Kumar Sodavaram and S. C. Mukhopadhyay
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Interdigital Sensing System for Kidney Health Monitoring . . . . . . . . . . 267 S. N. Prabhu, C. P. Gooneratne, K. A. Hoang, S. C. Mukhopadhyay, A. S. Davidson, and G. Liu Recent Advancement of Interdigital Sensor for Nitrate Monitoring in Water . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311 Md. Eshrat E. Alahi, Yun Hui, Fahmida Wazed Tina, Fowzia Akhter, Anindya Nag, Tianzhun Wu, and S. C. Mukhopadhyay Temperature and Humidity Compensated Graphene Oxide (GO) Coated Interdigital Sensor for Carbon Dioxide (CO2) Gas Sensing . . . . 329 Fowzia Akhter, Saima Hasan, Md. Eshrat E. Alahi, and S. C. Mukhopadhyay Development of Dual-Friction Drive Based Piezoelectric Surface Acoustic Wave Actuator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 351 Basudeba Behera Interdigital Sensor for IoT Applications . . . . . . . . . . . . . . . . . . . . . . . . . 369 M. Adhikary Some Applications of Interdigital Sensor for Future Technologies . . . . . 383 J. K. Roy and S. C. Mukhopadhyay
About the Editors
Dr. Subhas Chandra Mukhopadhyay (M’97, SM’02, F’11) graduated from the Department of Electrical Engineering, Jadavpur University, Calcutta, India with a gold medal and received Master of Electrical Engineering from Indian Institute of Science, Bengaluru, India. He obtained Ph.D. (Eng.) from Jadavpur University, India and Doctor of Engineering from Kanazawa University, Japan. Currently, he is working as a Professor of Mechanical/Electronics Engineering and Discipline Leader of the Mechatronics Degree Programme of the School of Engineering, Macquarie University, Sydney, Australia. He has over 30 years of teaching and research experience. His fields of interest include Smart Sensors and Sensing Technology, Wireless Sensor Networks, Internet of Things, Electromagnetics, Control Engineering, Magnetic Bearing, Fault Current Limiter, Electrical Machines, Numerical Field Calculation, etc. He has authored/co-authored over 500 papers in different international journals, conferences, and book chapters. He has edited 18 conference proceedings. He has also edited 25 special issues of international journals as lead guest editor and 35 books with Springer-Verlag. He was awarded numerous awards throughout his career and attracted over AUD 6.2 M on different research projects. He has delivered 359 seminars including keynote, tutorial, invited, and special seminars. He is a Fellow of IEEE (USA), a Fellow of IET (UK), and a Fellow of IETE (India). He is a Topical Editor of IEEE xi
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Sensors Journal and an Associate Editor IEEE Transactions on Instrumentation. He has organized many international conferences either as General Chair or Technical Programme Chair. He is the Founding Chair of the IEEE Sensors Council New South Wales Chapter. Dr. Boby George received M.Tech. and Ph.D. in Electrical Engineering from the Indian Institute of Technology (IIT) Madras, Chennai, India, in 2003 and 2007, respectively. He was a Postdoctoral Fellow with the Institute of Electrical Measurement and Measurement Signal Processing, Technical University of Graz, Graz, Austria, from 2007 to 2010. He joined the faculty of the Department of Electrical Engineering, IIT Madras in 2010. Currently, he is working as a Professor there. He serves as one of the Associate Editors of the IEEE Sensors Journal, IEEE Transactions on Instrumentation and Measurements and IEEE Transactions on Industrial Electronics. His areas of interests include measurements, sensors, and instrumentation. Prof. Joyanta Kumar Roy has been working in electronics and automation engineering since 1984 as Company Director, Consulting Engineering, Developer, Researcher, and Educationist. He graduated from the Department of Physics from the University of Calcutta, India, and received Master of Science in Physics in 1977. He started his career as an entrepreneur in the year 1984 and founded a small manufacturing enterprise named System Advance Technologies Pvt. Ltd., dealing with turnkey execution of SCADA, automation, and industrial instrumentation system. In 2004, he obtained Ph.D. (Technology) in Applied Physics from University of Calcutta, India, and executed a number of projects related to control, automation, and instrumentation in several engineering sectors. After a long association with industry, he started his academic career from 2005. He worked with many educational institutes as principal, dean, and professor. His research group developed low-cost non-contact liquid-level transmitter, temperature transmitter, pressure transmitter, vortex flow transmitter, mass flow meter, etc. He has contributed more than 150 scientific and technical publications in the form of books, book chapters, journal papers, conference papers, manuals, and engineering design of industrial
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project. He is a technical speaker and has given invited talks in a number of international and national-level conferences. He organized many technical events, national and international events and worked as TPC member. He is the Founder Chairman of Eureka Scientech Research Foundation. He is a senior member IEEE and chapter chair IEEE Circuits & Systems, Region-10, India, Kolkata Section, Chairman and EC member IET (UK) Kolkata Network, Fellow of IWWWA, and Fellow of IETE. Presently, he is working as Editor of S2IS and a regular reviewer of research articles. His present research interest includes development of smart measurement and control system for water production and distribution, multifunction sensor, IoT-based m-health, technology-assisted living, smart home and city. Tarikul Islam (M’16-SM’20) was born in Murshidabad, West Bengal, India. He received M.Sc. Engineering in Instrumentation and Control System from A. M. U. Aligarh, U.P. in 1997 and Ph.D. (Engineering) from Jadavpur University, Kolkata, India, in 2007. From 1997 to 2006, he was Assistant Professor and from 2006 to 2012, he was Associate Professor with the Electrical Engineering Department, Jamia Millia Islamia (A Central University), New Delhi. Since 2012, he is working as Professor at the same University. He has over 20 years of teaching and research experience. He has authored/co-authored 5 book chapters, 1 edited book, filed 2 Indian patents and published more than 160 papers in peer-reviewed journals and conferences. He received research grants from government agencies like DST, DRDO, MHRD, CPRI, DAE of more than 260,000 (US$). His research interests include sensors and sensing technologies, electronic instrumentation. He is a life member of IETE (India), ISTE (India) and a senior member of IEEE. He is a topical editor for IEEE Sensors Journal. He is an Associate Editor for IEEE Transactions on Instrumentation and Measurement, and International Journal on Smart Sensing and Intelligent Systems. He is a Co-Editor of a special issue of an International Journal of Electronics, MDPI.
Progress of Interdigital Sensors Over Last Two Decades: A researcher’s Perspective S. C. Mukhopadhyay, C. P. Gooneratne, and J. K. Roy
Abstract Interdigital sensors are being used in many different applications around us to help human beings to live a safe, sound and healthy life. The transition has taken place due to significant changes in terms of material, manufacturing, signal processing, and applications and so on. The current chapter will describe a few applications in which the author is involved over the last two decades to show the gradual changes taken place during the time.
1 Introduction Planar sensors are very popular and useful in the field of science and engineering, to detect different parameters of interest. Over the years there has been a growing interest to develop different types of planar structured sensors, namely meander, mesh, interdigital types as well as circular, spiral and many other types to cater many different applications due to the advantage of one-side access.
2 Early Applications of Planar Sensors Planar meander type of sensors have been used to determine the quality of printed circuit board during the nineties [1]. The meander patterned conductor carry a high frequency current to generate the magnetic field is usually kept on top of the PCB. S. C. Mukhopadhyay (B) School of Engineering, Macquarie University, North Ryde, NSW 2109, Australia e-mail: [email protected] C. P. Gooneratne Saudi Aramco, Dhahran 31311, Saudi Arabia J. K. Roy Eureka Scientech Research Foundation, Kolkata, West Bengal, India © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_1
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It is possible to determine the quality of the PCB tracks such as non-uniformity, discontinuity, short-circuit for single-layer as well as multi-layer PCBs. Planar mesh type coils have been used for the estimation of surface properties [2] as well determination of the quality of electroplated materials [3, 4]. The size of the track-width especially pitch of the mesh type of coil is very important for accurate determination of properties [5]. The detailed model and its formulation for analytical determination of impedance of the sensor as well as estimation of properties has been reported [6, 7]. The comparison of performance of planar sensors has been conducted [8, 9]. Most of the activities on planar type sensors mainly meander and mesh type were conducted at Kanazawa University, Japan. Relatively high end equipment and instrumentation is essential for this type of research activity.
3 Research on Interdigital Sensors In the last few decades there has been a significant improvement on the performance of interdigital sensors. In country like New Zealand where agriculture is extremely important, capacitive sensor plays an important role for inspection of quality of water, food, beverages, meat etc. Interdigital sensor is the planar form of capacitive sensor with one side access. Figure 1 shows the transformation process of a conventional three dimensional capacitive sensor to a 2-D planar interdigital sensor. The first prototype as shows in Fig. 1e was fabricated from conventional printed circuit board design technique [10–12]. The sensor is very cheap to fabricate as it uses the simple PCB fabrication technology which is usually available in most of the universities. The necessary electronic circuits cum instrumentation are simple as the sensor usually operates at relatively low frequency, up to a few kHz. In universities without a dedicated research facilities, the interdigital sensors based research is feasible and possible using the available teaching facilities.
3.1 Inspection of Meat Quality The first application of the fabricated interdigital sensor was determination of fat and protein content in meat [10]. Usually piece of meat are cut into rectangular shape of around 120 mm × 100 mm X 30 mm dimensions and weighing around 1.5 kgs. To be able to measure the piece of meat in one measurement, the interdigital sensors using the PCB technique was fabricated in the similar shape and sizes. The pictorial representation of measurement along with sensors are shown in Fig. 2. Three different pitch lengths of interdigital sensors were fabricated to see the effectiveness and accuracy of measurement. The detailed results are presented in [10].
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Fig. 1 Interdigital sensors; a 3-D conventional capacitive sensor; b converting 3-D capacitor to a 2D planar interdigital sensor; c electric field lines of interdigital sensor; d enhancement of sensitivity by multiple electrodes; e first prototype from conventional printed circuit board technique. Courtesy Refs. [10–12]
3.2 Determination of Looseness of Leather The next application of interdigital sensor was conducted to inspect the looseness of leather [11]. The traditional method of determination of looseness is based on mechanical force measurement and can be subjective. The planar sensor based measurement will be able to eliminate the error. The methodology has been shown in Fig. 3 and the details are available in [11].
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Fig. 2 Inspection of quality of meat [10]
Fig. 3 Inspection of quality of leather [11]
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Fig. 4 Fabrication of new structure of interdigital sensors [14]
4 New Structure of Interdigital Sensors The size of the interdigital sensors as reported before was large, more than 100 mm in length and the structure was of conventional type, the +ve and –ve electrodes are one after another and separated by a distance. In order to explore different structures and their effectiveness, we fabricated small size sensors of a few mm length and width. The small sensors have been used to inspect quality of seafood especially whether the seafood is contaminated with natural biotoxins [12, 13]. The structure has been changed so that the field distribution is uniform through the sensing region. Figure 4 shows the arrangement in which 1-11-1, meaning 1 exciting electrode (positive), 11 sensing (negative) electrodes with same pitch gap between consecutive electrodes. The detailed analysis has been reported in [14]. The developed seafood inspection tool has been shown in Fig. 5.
5 Planar Electromagnetic Sensors Planar electromagnetic sensors consist of planar meander and interdigital sensor working together. The magnetic field is created by the current flowing through the meander coil and the electric field is generated by the interdigital structure. The meander coil and the interdigital coil may be connected in series and parallel form depending on applications. The frequency of operation is very important to measure properties of materials under test. A schematic diagram and the equivalent circuit to measure the impedances to determine the measured parameters are shown in Fig. 6 [16–19]. The planar electromagnetic sensor has been used to detect nitrate contamination in water and results have been reported in [16–19]. The electrochemical impedance spectroscopy based method is sued to determine the impedances of the
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Fig. 5 Inspection of seafood (seafood inspection tool) [14, 15]
coil and from which the materials properties are determined. The measured properties are not based on selective detection but based on experimental evaluation.
6 MEMS Based Interdigital Sensor So far the sensors described in earlier sections are of large sizes varying between a cm to tens of cms. The pitch length of the sensor was a few millimetres and more. In order to detect something of very small sizes, it is important to have the sensors of very small pitch lengths. It is difficult to fabricate sensors of pitch lengths of a few tens of micrometres using conventional PCB fabrication technology. With the collaboration of King Abdullah University of Science and Technology (KAUST), Saudi Arabia, smart sensors have been fabricated using Micro Electro-Mechanical Systems (MEMS) technology. Figure 7 shows picture of the fabricated sensors where
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Fig. 6 Planar electromagnetic sensor for detection of nitrate contamination in water [16–19]
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Fig. 7 MEMS based interdigital sensor design [20, 21]
the conventional sensors of pitch length of 25 micro-meters as well as new structure of 1-11-1 and other configurations have been fabricated. The sensors have been used to determine contamination of E-coli bacteria in meat [20] and detection of phthalate contamination in water coming from plastic [21].
7 Introducing Selectivity The interdigital sensors are used in many applications as the sensor is very sensitive to any kind of dielectric materials. The sensitivity is one of the most important features of any sensor and high value of it is very desirable but it is not everything. When the sensor is used to determine a specific parameter which is mixed within many items, it is extremely important that the sensor should respond to the parameter of interest. In other words the sensor should be selective to the parameter of measurement. In order to make the sensor to be selective to a particular chemical or biological parameter, the surface of the sensor to be functionalized so that the sensor surface is selective to measured parameters. There are many ways the functionalization of sensor surface can be done but there are still some challenges remain. One of the biggest challenge is the re-usability of the sensor as the sensor surface reacts with the sample for test, the sensitivity of measurement gets reduced. Moreover, the surface gets contaminated to the sample of measurement so may not be useful for future use. One of the option
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will be to have only one time use of the sensor electrode and throw the sensor after measurement like diabetic measurement. In the following section some projects will be explained briefly.
7.1 Meat Quality Inspection In one project MEMS based interdigital sensor was used to detect E-coli bacterial infection in food especially in meat [20]. Food poisoning are usually caused by endotoxins or Lipopolysaccharide (LPS) are associated with Gram-negative bacteria. Major food-borne pathogens such as Escherichia coli (E-coli) and Salmonella are Gram-negative bacteria cause a large number of outbreaks of food poisoning. Interdigital sensors have been functionalized with carboxyl functional polymer, APTES (3 Aminopropyltriethoxysilane) and then the coated sensors were immobilized with PmB (Polymyxin B) which has specific binding properties to LPS. Figure 8 shows SEM images of the sensor surface at different operating conditions. The procedure of the functionalization as well as immobilization to be followed a certain rules, the details of the procedures along with results have been described in [20]. The functionalized material, in this case APTES is extremely important and to be selected for different applications very carefully.
7.2 Detection of Phthalate Contaminated in Water In another project the phthalate contaminated in water leaching out of plastic bottle has been detected by MEMS based interdigital sensor. In this case the coating materials is a polymer which is produced by a method known as Molecular Imprinted Polymer (MIP) and the polymer is selective to any molecules to be detected. The MIP method is very useful to detect at molecular level though the shortcoming of the method is the sensor cannot be used for many times. The method of preparation of polymer is shown in Fig. 9 and the details of the system along with experimental results are available in [21–23]. The interdigital sensor along with the electrochemical impedance spectroscopy method was also used to detect liquefied petroleum gas (LPG) with and without coated particles of tin oxide (SnO2 ) in the form of a thin layer. A thin film of SnO2 was spin-coated on the sensing surface of the interdigital sensor to induce selectivity to LPG that consists of a 60/40 mixture of propane and butane, respectively. The research outcomes have reported a novel strategy for gas detection under ambient temperature and humidity conditions. The response time of the coated sensor was encouraging and own a promising potential to the development of a complete efficient gas sensing system [24, 25].
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Fig. 8 SEM images of bare and coated MEMS based sensor; a bare sensor; b sensor coated with one time dipping in APTES; (iii) sensor before PmB immobilization; (iv) Sensor after PmB immobilization
7.3 Biomedical Applications The interdigital based sensor can be used as a smart sensing system for biomedical and healthcare applications. The interdental sensor based system has been designed and developed as a point-of-care device to detect at the early stage of disease which is essential for an efficient treatment. Bone loss can be detected and monitored by regular measurement of serum or urine C-terminal telopeptide of type 1 collagen (CTx-1). An Internet of Things (IoT)-based selective, sensitive, quick, and inexpensive device for the quantification of CTx-1 levels in serum has been reported in [26–30]. A planar interdigital sensor was coated with artificial antibodies, prepared
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Fig. 9 Preparation of molecular imprinted polymer [21–23]
by molecular imprinting technology. Electrochemical impedance spectroscopy was used to evaluate the resistive and capacitive properties of the sample solutions. A microcontroller-based system was developed for the measurement of the level of CTx-1 in serum and for data transmission to an IoT-based cloud server. The data can be provided to the medical practitioner and a detailed investigation can start for early detection and treatment. The developed sensing system responded linearly in a range of 0.1–2.5 ppb, which covers the normal reference range of CTx-1 in serum, with a limit of detection of 0.09 ppb. The results demonstrated that the proposed portable bio sensing system could provide a rapid, simple, and selective approach for CTx-1 measurement in serum. Sheep serum samples were tested using the proposed system and the validation of the results was done using an enzyme-linked immunosorbent assay kit. Figure 10 shows the results of the response of the sensor with NIP (Non-imprinted polymer) as well as with MIP coated sensor. It clearly shows that MIP coated sensor has more ability to detect the sample with CTX-I compared to NIP coated sensor. Figure 11 shows the complete block diagram of the IoT enabled smart sensing system and the Fig. 12 shows the microcontroller based prototype developed in the laboratory.
7.4 Detection of Nitrate Contamination MEMS based interdigital sensor has been developed as a smart sensing system to detect and measure the level of nitrate contamination in water as shown in Fig. 13. The results have been shared in [31–34]. The uncoated sensor can be used to measure the response of the sensor with different known concentration and the calibration curve can be made. Using the calibration curve, the unknown level of nitrate can be
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Fig. 10 Response of the sensor to CTX-I with both NIP and MIP [26]
measured. The interdigital sensor being a capacitive in nature is usually influenced by temperature and humidity. Since the sensor is dipped in water the effect of humidity is absent. To overcome the effect of temperature on the accuracy of measurement, a compensation circuit has been developed and is reported in [32]. To detect only nitrate the selective property has been achieved by developing a MIP based polymer and has been reported in [33]. A graphene based sensor of interdigital structure as well as temperature compensation has been reported in [34].
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Fig. 11 The block diagram of the IoT enabled smart sensing system [27]
Fig. 12 A microcontroller based developed point-of-care device to detect early stage of osteoporosis [28]
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Fig. 13 IoT enabled interdigital sensor based nitrate monitoring; (i) the complete system; (ii) inside electronic components [31]
8 Interdigital Sensors Based on Flexible Materials In recent times, the research and developmental activities on flexible sensors are happening at very high pace and a lot of systems are reported. Of course, it does not mean that MEMS based sensors will be obsolete but in many applications the flexible sensors offer more advantages. A few of them are listed here. • • • • •
Difficult to attach sensors with rigid substrates. The cost of fabrication of sensors with rigid substrates is high. Difficulty in fabrication process. Electrode material comes off on attachment of the chips. Difficult to work with liquids due to hydrophilicity.
The design, development, and fabrication of a flexible and wearable sensor based on carbon nanotube nanocomposite for monitoring specific physiological parameters has been presented in [35]. Polydimethylsiloxane (PDMS) was used as the substrate with a thin layer of a nanocomposite comprising functionalized multiwalled carbon nanotubes (MWCNTs) and PDMS as electrodes. The sensor patch functionalized on strain-sensitive capacitive sensing from interdigitated electrodes which were patterned with a laser on the nanocomposite layer. The thickness of the electrode layer was optimized regarding strain and conductivity. Traditionally MEMB based interdigital sensor senses parameters which is reflected by changes of resistance and capacitances without changing its dimensional properties. But with reference to Fig. 14, the interdigital sensor based on flexible materials can measure force, pressure as is shown as the physical dimension changes leading to change of resistance and capacitance. The sensor patch was connected to a monitoring device from one end and attached to the body on the other for examining purposes. Experimental results show the capability of the sensor patch used to detect respiration and limb movements. This work is a stepping stone of the sensing system to be developed
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Fig. 14 Interdigital sensor based on flexible material [35]
Fig. 15 Schematic diagram of the fabrication steps. PDMS: Polydimethylsiloxane. NC: Nanocomposite [35]
for multiple physiological parameters. Figure 15 shows the steps of fabrication of PDMS-NC based flexible interdigital sensor. Design, fabrication, and implementation of a novel sensor patch developed from commercial polyethylene terephthalate films metallized with aluminium on one side has been reported [36]. The aluminium was ablated with laser to form interdigitated electrodes to make sensor prototypes. The interdigitated electrodes were patterned on the substrate with a laser cutter. The steps of fabrication are shown in Fig. 16. The prototypes have been used as a tactile sensor showing promising results for using these patches in applications with contact pressures considerably lesser than normal human contact pressure. The flexible sensors are made up of different materials, the base materials can be either PDMS, PET or Polyimide films. The materials for electrode can be made of CNT, graphene or Aluminium. The relative advantages and disadvantages of different materials are described in Table 1. Over the last few years, different types of sensors based on flexible materials have been designed and fabricated. Laser induced graphene sensor for salinity measurement utilizing strain effect based on graphine/PDMS has been presented in [37, 38]. The Ref. [39] is a review article on graphene based sensors and different applications. Flexible sensor for determination of taste has been presented in [40]. Wearable
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Fig. 16 Fabrication of a nanocomposite based sensor [36] Table 1 Materials for flexible sensors PDM5 (Polydimethylsiloxane)
PET (Polyethylene terephthalate)
• Advantages
• • • •
•
• Difficult to integrate electrodes • Carry out deposition directly on its surface
• Very susceptible to heat degradation • Poor impact strength
• Expensive • Poor resistance to alkalies • Low impact strength
CNTs
Graphene
Aluminum
• Better dispersion with the mixed polymer • Better compatibility • Higher flexibility
• High surface-to-volume ratio • Excellent electrical conductivity • High carrier mobility and density • High thermal conductivity
• Corrosion resistance • Strong at low temperatures
Disadvantages
• Advantages
•
Inert • Cheap Non-toxic • Good chemical Non-flammable resistance Hydrophobic in nature • High resistance to temperature • High flexibility
Polyimide
• Low purity Disadvantages • Low lifeline • Expensive growth process
• High flexibility • Good chemical and thermal resistance • High mechanical toughness
• Does not have a band • Growth of oxide layer gap • More expensive than • High quality graphene steel is expensive and • Abrasive to tooling complex process • Graphene exhibits some toxic qualities
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sensor based on PDMS-embedded conductive fabric has also been investigated and are available in [41]. Flexible sensors can be fabricated for application in low-force environment as reported in [42]. The developed sensors is of tactile in nature and can be used in the robotic arms in an industrial environment [43]. Graphite and PDMS based Interdigital sensor to detect phosphate level in water has been reported in [44] where the measured data is uploaded in cloud. Laser induced flexible graphene sensor with interdigital pattern has been reported in [45]. Interdigital sensors for biomedical, environmental and industrial applications have been reviewed in [46], fabrication and characterization has been described in [47] and applications have been presented in [48] respectively.
9 Measurement System The interdigital sensor is predominantly a capacitive sensor which is measured with the help of a simple circuit as shown in Fig. 17. An alternating excitation is applied across the sensor and the capacitance is measured with the help of voltage and current measurement. To measure the current flowing through the sensor a series resistance is connected. The resistance value should be very low with respect to the capacitive impedance of the sensor so that the effect of the series resistance is negligible. With the help of a microcontroller programming a desired frequency alternating signal can be generated. The applied voltage across the sensor as well as the voltage across the sensing resistance can be measured with the help of the same microcontroller. Both the magnitude and phase of the capacitive impedance are measured to determine the real and imaginary part of the impedance. The details of the circuit and measurement has been explained in step by step in [49] and some more information are available in [50–54]
Fig. 17 Measurement circuit for interdigital sensor
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10 Conclusions and Future Possibilities Interdigital sensors are with us over a few decades and there are numerous applications of making use of it. The chapter has described a few applications over the last decade starting from a simple printed circuit based design to recent flexible materials based design. The sensitivity is enhanced by choice of design, materials, configurations, number of layers etc. The selectivity is entirely depended on the applications and can be achieved by providing a suitable layer on top of the sensor surface. Though molecular imprinted polymer based selective detection is very popular in recent times but there are challenges on functionalization, repeatability and re-usability as well as usage in portable applications. In recent times, there is an effort made to make use of it in implanted conditions and it is expected that it will deliver good results [55, 56].
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30. N. Afsarimanesh, S.C. Mukhopadhyay, M. Kruger, Molecularly imprinted polymer-based electrochemical biosensor for bone loss detection. IEEE Trans. Biomedi. Eng. 65(6), 1264–1271 31. M.E.E. Alahi, N. Pereira-Ishak, S.C. Mukhopadhyay, L. Burkitt, An internet-of-things enabled smart sensing system for nitrate monitoring. IEEE Internet Things J. 5(6), 4409–4417 (2018) 32. M.E.E. Alahi, L. Xie, S. Mukhopadhyay, L. Burkitt, A temperature compensated smart nitratesensor for agricultural industry. IEEE Trans. Ind. Electron. 64(9), 7333–7341 (2017) 33. M.E.E. Alahi, S.C. Mukhopadhyay, L. Burkitt, Imprinted polymer coated impedimetric nitrate sensor for real-time water quality monitoring. Sens. Actuat. B 259, 753–761 34. M.E.E. Alahi, A. Nag, S.C. Mukhopadhyay, L. Burkitt, A temperature-compensated graphene sensor for nitrate monitoring in real-time application. Sens. Actuat. A 269, 79–90 (2018) 35. A. Nag, S.C. Mukhopadhyay, K. Jürgen, Flexible carbon nanotube nanocomposite sensor for multiple physiological parameter monitoring. Sens. Actuat. A 251, 148–155 (2016) 36. A. Nag, S.C. Mukhopadhyay, K. Jürgen, Tactile sensing from laser-ablated metallized PET films. IEEE Sens. J. 17(1), 7–13 (2017) 37. A. Nag, N. Afsarimanesh, S. Feng, S.C. Mukhopadhyay, Strain induced graphite/PDMS sensors for biomedical applications. Sens. Actuat. A 271, 257–269 (2018) 38. A. Nag, N. Afsarimanesh, S.C. Mukhopadhyay, Impedimetric microsensors for biomedical applications. Curr Opin Biomedi Eng 9, 1–7 39. A. Nag, A. Mitra, S.C. Mukhopadhyay, Graphene and its sensor-based applications: a review. Sens. Actuat. A 270, 177–194 (2018) 40. A. Nag, S. Mukhopadhyay, Fabrication and implementation of printed sensors for taste sensing applications. Sens. Actuat. A 269(1), 53–61 (2018) 41. A. Nag, B.V.B.R. Simorangkir, E. Valentin, T. Bjorninen, L. Ukkonen, M.R. Hashmi, S.C. Mukhopadhyay, A transparent strain sensor based on PDMS-embedded conductive fabric for wearable sensing applications. IEEE Access 6, 71020–71027 (2018) 42. A. Nag, S. Feng, S.C. Mukhopadhyay, J. Kosel, D. Inglis, 3-D printed mould-based graphite/PDMS sensor for low force applications. Sens. Actuat A 280, 525–534 (2018) 43. A. Nag, B. Menzies, S.C. Mukhopadhyay, Performance analysis of flexible printed sensors for robotic arm applications. Sens. Actuat. A 276, 226–236 (2018) 44. A. Nag, M.E.E. Alahi, S. Feng, S.C. Mukhopadhyay, IoT-based sensing system for phosphate detection using graphite/PDMS sensors. Sens. Actuat. A 286, 43–50 (2019) 45. T. Han, A. Nag, R.B.V.B. Simorangkir, N. Afsarimanesh, H. Liu, S.C. Mukhopadhyay, Y. Xu, M. Zhadobov, R. Sauleau, Multifunctional flexible sensor based on laser-induced grapheme. Sensors 19, 3477. https://doi.org/10.3390/s19163477 46. N. Afsarimanesh, A. Nag, E.E. Alahi, T. Han, S.C. Mukhopadhyay, Interdigital sensors: biomedical, environmental and industrial applications. Sens. Actuat. A Phys. 305, 18 (2020). https://doi.org/10.1016/j.sna.2020.111923 47. A. Nag, S.C. Mukhopadhyay, Wearable flexible sensors: fabrication and characterization. https://doi.org/10.1088/978-0-7503-1505-0ch1, pp. 2-1 to 2-27, in Wearable Sensors Applications, Design and Implementation, ed. by S.C. Mukhopadhyay, T. Islam. ISBN 978-0-75031505-0 (ebook), ISBN 978-0-7503-1503-6 (print), ISBN 978-0-7503-1504-3 (mobi). https:// doi.org/10.1088/978-0-7503-1505-0 (2017) 48. T. Islam, S.C. Mukhopadhayay, Wearable sensors for physiological parameters measurement: physics, characteristics, design and applications, https://doi.org/10.1088/978-0-7503-15050ch1, pp. 1-1 to 1-31, in Wearable Sensors Applications, Design and Implementation, ed. by S.C. Mukhopadhyay, T. Islam. ISBN 978-0-7503-1505-0 (ebook), ISBN 978-0-7503-1503-6 (print), ISBN 978-0-7503-1504-3 (mobi). https://doi.org/10.1088/978-0-7503-1505-0 (2017) 49. M.E.E. Alahi, A. Nag, N. Afsarimanesh, S.C. Mukhopadhyay J.K. Roy, “A simple embedded sensor: excitation and interfacing”, smart sensors, measurement and instrumentation, in Advanced Interfacing Techniques for Sensors, vol. 25, ed. B. George, J.K. Roy, V.J. Kumar, S.C. Mukhopadhyay (Springer, 2017), pp. 111–138. ISBN 978-3-319-55368-9 50. M.E.E. Alahi, X. Li, S.C. Mukhopadhyay, L. Burkitt, Application of practical nitrate sensor based on electrochemical impedance spectroscopy”, smart sensors, measurement and instrumentation, in Sensors for Everyday Life: Environmental and Food Engineering, vol. 23, ed. by
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Interdigital Proximity Sensor: Electrode Configuration, Interfacing, and An Application Abhishek Ranjan, Boby George, and S. C. Mukhopadhyay
Abstract Capacitive sensors are widely used for proximity applications ranging from touch-sensitive screens to sensors for classifying human proximity. It is a wellestablished field with contributions from many researchers. In this chapter, an interdigitated capacitive proximity sensor to address an unsolved problem of children from being left behind in hot cars. The sensor presented is integrated into the infant seat. It works by utilizing the large relative permittivity of the human body. The existing mechanisms utilize the weight of the child/infant or a mechanical switch under the seat to detect the presence and fail to meet the functionality requirements sufficiently. As the presented one is not relying on such parameters and it only requires the proximity, the overall reliability that can be achieved is high. The electrode structure, together with the measurement scheme utilizes the coupling and shielding effects of the electric field. The electrode structure is a combination of a planar two-electrode scheme and interdigitated electrodes. The chapter presents a brief note on the state of the art, a potential solution, and test results from a prototype developed and evaluated in a car.
1 Introduction Sensors, although not explicitly seen, play important roles in our day-to-day lives. They help to improve our comfort and safety and have become an integral part of our lives. Examples include a simple temperature sensor for air-conditioned room to a A. Ranjan OLA Electric, Bangalore, India e-mail: [email protected] A. Ranjan · B. George (B) Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, India e-mail: [email protected] S. C. Mukhopadhyay School of Engineering and Advanced Technology, Macquarie University, Sydney, Australia e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_2
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car crash sensor initiating the deployment of airbags within a critical time frame. The sensors act as an extension of our five senses, playing important roles in improving the safety of various systems, e.g. fire detectors and alarms, rollover sensors and crash sensors in automotive systems, etc. In applications involving human safety, the reliability of the sensors cannot be compromised. Hence selection of the right sensing technique and the correct measurement approach is needed to design suitable sensors meeting the functionality, and reliability standards keeping the cost minimum. The focus of this chapter is on human proximity sensing for safety applications. Capacitive sensors have their inherent advantages over other types of sensors like optical, inductive, or mechanical methods when it comes to human proximity [1, 2]. Most of the optical sensors are not well suited for the harsh environment. Inductive sensors are a good option but work only for objects that are either metallic (eddy current sensor) or magnetic (utilizing the permeability) in nature. On the other hand, if we use mechanical switches, they simply get activated with any force or pressure above a threshold and thus cannot be used to differentiate between humans and other objects. Moreover, mechanical switches require physical contact for activation, and the lifetime of such devices is limited to a certain number of cycles. For sensing human proximity, the relative permittivity or dielectric constant (≈80, considering the water content) of the human body and the presence of distributed capacitance between the human body and ground can be exploited. There are many sensors reported, to improve human safety, that work based on the relative permittivity. In [3], a capacitive seat occupancy system is discussed. Multiple capacitive electrodes are employed in the seat of a car to determine occupancy based on the change in the dielectric constant of the medium. This is used to enable or disable air-bag or deploy at lower power when an accident occurs. Force or weightbased sensors fail to work satisfactorily in such situations. A capacitive sensor to detect floating targets like humans close to the rear end of a truck is discussed in [4]. Capacitive sensors have also been used in conjunction with ultrasound sensors to extend range and reliability for assisted parking in cars [5]. A capacitive sensor reported in [6] is used to switch off a chain saw automatically, if a human body is detected close to the chain. Capacitive sensing approaches are also used to realize non-contact control of switches, by utilizing the proximity of the hand of the user [7]. The capacitive proximity sensing approach has also been utilized to determine three-dimension (3D) position sensing of object [8, 9]. Typical capacitive proximity sensors have two electrodes. The electrodes could be a planar arrangement of parallel plates as in Fig. 1a. It could also be circular with a center electrode surrounded by a planar ring. The value of the electric field lines will be relatively large close to the inner facing nearby edge regions of the electrodes A and B, in Fig. 1a. The values will be maximum when the electrodes are kept as close as possible without touching each other. The electric field with similar values can be made available almost throughout the sensor area if the interdigitated electrode structure is given in Fig. 1b can be employed. This is an advantage compared to the two-plate structure. As can be seen, the comb structure given in Fig. 1b ensures that the gap between the electrodes is small. This helps to get a large electric field across the sensor area. The width of the electrodes and the gap between them can be
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Fig. 1 Capacitive proximity sensors. A pictorial view of the electric field lines is shown for illustration purposes. (a) planar parallel plate arrangement, and (b) Interdigitated electrode structure. The electrical equivalent circuit, considering the lumped model, in the presence of an object, is shown in (c)
designed as per the need. This kind of structure is particularly useful if the object to be sensed is expected to be close to the electrodes in comparison with the distance between outer edges of A and B. These are not only used for proximity sensing but also used for insulation testing [10], and several other applications [11–14]. There is also a single electrode-based capacitive proximity sensor, suitable for grounded objects or objects capacitively coupled to the ground [15]. This is not illustrated here. An electrical equivalent circuit of the capacitive proximity sensor, in the presence of an object, is shown in Fig. 1c. In this diagram, the object is considered to have much less impedance compared to the impedance of the capacitances shown. From the electrode A, there is a capacitance C AB to electrode B, capacitance C A to ground, and capacitance C AO to the object. The object has a capacitance C G to ground. Similar to the A, the electrode B has capacitance C B to ground and C BO to the object. A suitable measurement system can be used to measure the capacitance of interest [3, 16–19]. In this chapter, the application of an interdigitated capacitive proximity sensor is presented. It is about sensing of a child in the child/baby seat in a car. The details are presented below.
2 Child Left Behind the Problem and Reminder Technologies There have been more than 700 incidents of child death (from 1998 to 2016) [20], reported in the U.S alone because they were left behind alone in parked cars during the daytime. An event that seems so not alarming to many people can prove to be fatal. Even on a normal day when the temperature is around 21 °C, the temperature
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inside a parked car shoots up rapidly within a few minutes [21]. This has been rechecked by us monitoring change in temperature inside a car and comparing it with ambient temperature. To do this, two temperature sensors (IC LM35 from Texas Instruments [22]) were employed, one kept inside a car and another outside the car. The outputs from these were recorded using a data acquisition system (from Measurement Computing Corporation) and a computer. The car was initially brought from the shade and then parked in sunlight. The windows were kept closed for the first 20 min and then lowered down by 5 cm for the next 20 min (approx.). Later, all the windows were opened fully and the car was brought back to shade after 5 min. The outputs from both the temperature sensors were recorded throughout the whole period. The plot of the same given in Fig. 2 shows a steep rise in temperature. In the first 20 min, the temperature inside reached to about 50 °C from 34 °C ambient temperature. Since the thermo-regulatory system of infants is underdeveloped, their body temperature rises three to five times faster compared to an adult [23]. This leads to hyperthermia, known as ‘heatstroke’ which proves to be fatal in many cases [24]. Parents usually forget their children in the car unintentionally. Sometimes it is merely because they want to let the child have an undisturbed sleep or just leave the child with an intent to come back within a few minutes. Unexpected changes in the daily routine of stressed-out parents can easily result in such situations. Analyzing the incidents and reasons behind shows that a large percentage of such cases occurred due to the negligence of parents/guardian leaving or forgetting their child in the car. Study shows that the reasons behind such circumstances are usually because parents/guardians tend to forget their children or left unattended inside the car [25].
Fig. 2 Rise in temperature inside a car with respect to outside when parked in the sun. The variations in the measured temperature seen during the windows partially open are due to the breeze present during the test. This shows that partially lowering the windows will not help much in reducing the temperature inside
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Fig. 3 a A pie chart showing reasons for children’s death inside a parked car. b Age-wise distribution of incidents
Figure 3a [20] shows that around 81% of the incidents reported are due to the reasons mentioned above. In terms of the age group, children below 2 years old are most vulnerable to such mishaps, as seen clearly in Fig. 3b [7]. A study conducted by the National Highway Traffic Safety Administration (N.H.T.S.A) [26], U.S. Department of Transportation, assessed the performance of all the products designed to prevent children from being left behind in parked cars. A total of 18 different technologies were identified for child reminder. Out of these, seven were based on pressure or force sensors, four were mechanical switch-based (on buckle or door) detectors, while five others didn’t have any sensing capabilities. The remaining two devices were integrated with the vehicle. A mechanical switch on the child seat buckle does not guarantee a child’s presence and thus may initiate a false alarm. While the vehicle integrated system is possible only if the particular car models having the system installed are bought. Pressure or force-based technologies reviewed by NHTSA also proved inconsistent and unreliable performance. The devices required frequent adjustment of child/dummy in the seat for activation. A system to detect the presence of a child based on a combination of an optical detector, mechanical switch and temperature sensor has been reported in [27]. Optical or thermal sensors are not well suited for this as it may not detect when a child is wrapped in a blanket or clothes. An electric field sensor to detect infants sitting in a rearward position in an infant seat in a car has been reported in [28]. A capacitive seat occupancy detection system (for adult passengers) that provides occupancy information to an airbag control unit has been reported in [3]. In these schemes, sensing electrodes are placed in the car seat as it is to detect adult occupancy. The thickness of the infant seat available in the market is not fixed. Thus, the distance between the child and electrodes in a car seat can be between 5 and 12 cm (depending on the manufacturer). Thus, it is difficult to sense the presence of a child using these sensors, reliably. Also, such capacitive/electric field systems are not available in all the cars and usually, if available, it is not installed in back seats of cars where the child seat is placed, and the probability of forgetting a child is high. A weighing-based child detector has been developed by NASA’s Langley Research Center [29]. Such weight-based sensors may detect water or milk bottles, filled thermo-flask or bag,
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toy, etc. (or any combination of such items) as a child and activate an (unwanted) alarm. There is news, reported recently that Tesla is planning to develop a suitable sensor using millimeter wave technology [30]. It will require special approval from regulatory agencies to use this technology inside the car. Timely detection of a child left behind in a car (child seat) can help to initiate immediate action and avoid a tragedy. As per the study conducted by NHTSA, the existing sensors in the market fail to meet multiple criteria required for a child occupant sensor. In this chapter, a capacitive proximity sensing scheme that uses variation in distributed capacitance and permittivity of the human (child) body is presented. Special electrode structures and measurement techniques are required to achieve reliable functionality. Sensing the presence along with position and hence the active state of the occupant is some of the desirable features of the sensor.
3 Interdigitated Capacitive Proximity Sensor for Occupancy Detection in Child Seat A capacitive proximity-based child presence detection system is illustrated in Fig. 4. As can be seen, the capacitive sensor employs an interdigitated structure. Additionally, it has two outer electrodes to capture more information. It has a child presence detector and a warning system [31]. The sensor and the measurement and control unit (MCU) can be together in the final packaging. The MCU has a Capacitance-toDigital Converter (CDC) whose input terminals p, q, r, and s are connected to the capacitive sensor. The output of the CDC is given to a controller in the MCU. The MCU also has a temperature sensor, and it takes input from the engine control unit about the ON or OFF status of the vehicle. As soon as the MCU notes that the engine is turned off from a turned-on condition, it instructs the CDC to measure the capacitance. If the controller finds, using an algorithm, that a child is present in the infant seat, it makes an audible alarm without any delay. This process repeats for every 1 min, and the volume of the alarm increases every min until the child is removed from the infant seat by the parents or other responsible people. If the child is not taken from the infant seat even 7 min (a time that can be preset) after the engine has been turned off, the controller turns ON the GSM modem and dials to the pre-entered phone number of the driver. In case of no response from the driver, it will dial to the parents. And, if still no response it will dial to a help/emergency number (say 911) and pass a preloaded message. This message will contain the vehicle number, address and phone number of the immediate person to be contacted, the temperature inside the car, etc. to take appropriate action by the authorities. The system could able be equipped with a GPS unit if required to provide the location information. The system is programmed in such a way that the phone numbers can be easily loaded into the unit and can be modified. Similarly, the time at which the unit initiates an audible alarm and dialing a phone number can be adjusted depending on the preference of the users. Test results from this system, for different scenarios, are presented in [31]. Test
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Fig. 4 Interdigitated capacitive proximity sensor for a child seat. a Diagram of the seat with a sensor. b The measurement and control unit, c sensor electrode structure, d Simplified electrical equivalent circuit, e photograph of the experimental set-up with a dummy baby filled with water. The prototype sensor is integrated into the seat. Measurements using electrodes A1 –A2 and B1 –B2 are illustrated in f and g respectively. More details are available in [31]
results showed that the presence of a child in an infant seat can be reliably detected and suitable warning signal can be generated to save the child.
4 Modified System Although the above-mentioned system serves the required functionality, it is beneficial to get an idea about the position and change in the positions or activeness and if possible, even the respiration rate of the child. To sense position along with occupancy, the electrode pattern adopted earlier was altered. The two outer electrodes p and q were split into two each. Electrode p was split into p and p’ while q formed q and q’ . The new electrode configuration as shown in Fig. 5 gives more sensing capacitors which can be measured to determine occupancy as well as position (like left, right, center, backward or forward) of the child. The sensing capacitances can be measured using a synchronous demodulation technique [16] as indicated in Fig. 6.
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Fig. 5 Interdigitated capacitive proximity sensor with additional outer electrodes. a Electrode structure, b Measurement circuit, c Nodes connected to the measurement system through the switches, and the corresponding capacitance being measured
Fig. 6 Testing the system inside a car with the dummy baby. The fabricated and packaged sensor structure is visible in the inset of (b)
In this scheme, multiple switches are employed to measure one sensing capacitor at a time. Switches S1 to S6 connects electrode terminals to the source thereby act as a transmitter electrode (Tx ). While S7 to S12 connects electrode terminals to a current-to-voltage converter and works as a receiver (Rx ). For instance, if we need to measure the value of capacitor C rs between electrodes r and s, only the switch S3 and S10 will be closed. By closing switch S3 , electrode r is connected to excitation source V S whereas S10 makes s electrode to serve as receiver node. The current I C reaching
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terminal s flows through the feedback impedance (Z) connected between the output and inverting terminal of the op-amp. The op-amp output voltage vo’ , being directly proportional to C rs can be used to measure the change in this capacitance. Similarly, by controlling the switches in a fixed sequence repetitively, all the fifteen possible capacitors (between any two electrodes) can be measured. The signal acquired, first goes through a Phase Sensitive Detector (PSD) and then averaged using a moving average filter with a window size of 16 samples. The purpose of using a PSD was to correctly retrieve the amplitude of the signal of interest (i. e. 10 kHz sinusoidal wave) at the output, even in the presence of noise. The modified version of the sensor configuration and measurement system was tested using a dummy, which is filled with water to emulate a baby, in various positions. Though there are fifteen combinations possible with the new electrode pattern, this study was restricted to eight of them. This selection was determined based on initial tests conducted in the laboratory with the sensor unit. The sensing capacitors which showed very low relative change with the dummy child were discarded in further study. Finally, only eight out of fifteen were considered. These capacitances are C pr , C p’r , C sq , C sq’ , C rs , C p’p-q’q , C pp’, and C qq’ as marked in the table in Fig. 5. Figure 6 shows the test setup inside a car. The changes in output obtained due to change in the eight capacitors when the dummy was placed in different positions in the car seat are given in Fig. 7. Further tests were carried out in three phases. At first, the system was tested in a car with a dummy for special conditions like (a) the engine turned ON and then OFF, (b) when an adult touches the dummy. As expected, changes were observed in all the eight sensing capacitors when the dummy was placed in the child car seat. Some of them showed an increase while in the case of others there was decrease in output voltage due to the reasons discussed. This shielding and coupling effects are expected as per the electrode geometry [3, 31]. When the dummy was touched, by an adult, the output for each capacitor showed a dip in their values due to a decrease in the current received by the electrode (Rx). When an adult touches, the
Fig. 7 Test results using the prototype sensor in different positions of the dummy baby in the infant seat. Output in a vacant case is taken as unity. Tx and Rx represent the transmitter and receiver electrodes involved in the particular set of measurements
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capacitance between the body of the child and ground increases providing increases in shielding effect. The change while touching was noted to be approximately the same whether being touched from inside or outside the car. Turning the car ON or OFF did not reflect any change in any of the capacitance values. Figure 7 shows the output in different positions of the dummy such as center, left, right, forward, and backward. Changes in sensing capacitors C rs and C p’p-q’q were found to be sufficient to detect the presence of a child using a simple threshold-based algorithm. There were significant changes in the other six capacitors values C pr , C p’r , C sq , C sq’ , C pp’, and C qq’ . The change in these capacitors was observed to be sensitive to even slight displacement in position. To quantify the activity (change in position), from the data observed, a more complex algorithm than a threshold based one is required. Based on the studies, it is observed that the breathing rate of the child cannot be sensed reliably using the system developed. This is because the change in distributed capacitance and hence the change in shielding is very small when a child inhales or exhales air. This in combination with other movements of the baby, makes it difficult to sense the breath rate. It could be possible by improving the sensitivity of the system, further, and by developing efficient algorithms. As mentioned above, the results from the developed system clearly showed that the detection of the presence of the baby in the infant seat and activities (change in position) are possible with high reliability, aiding to solve the ‘child-left-behind’ problem in a car.
5 Conclusions A simple, effective, and low-cost solution for the ‘child-left-behind’ problem in a car is presented in this chapter. The system is built around a capacitive proximity sensor using an interdigitated electrode structure, to detect the presence of a child in an infant seat. It was found based on the tests conducted using the prototype system that the presence of a child and an active or non-active status of the child can be detected. Interdigitated capacitive sensors are used in several applications, and this is one of such applications. The system required to measure from the sensor could be any typical capacitance measurement system for the specified rage, sensitivity, and signal to noise ratio. In certain applications, the frequency of excitation needs to be carefully selected depending on the properties of the dielectric medium and required bandwidth of the measurement system.
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References 1. J. Lenz, A review of magnetic sensors. Proc. IEEE 78(6), 973–989 (1990) 2. S. Tumanski, Induction coil sensors—a review. Meas. Sci. Technol. 18(3), R31 (2007) 3. B. George, H. Zangl, T. Bretterklieber, G. Brasseur, A Novel Seat Occupancy Detection System Based on Capacitive Sensing. 2008 IEEE Instrumentation and Measurement Technology Conference, British Columbia, Canada, 1515–1519 (2008) 4. S. Nihtianov, G. Meijer, Application challenges of capacitive sensors with floating targets, in AFRICON (2011), pp. 1–6 5. T. Schlegl, T. Bretterklieber, M. Neumayer, H. Zangl, Combined capacitive and ultrasonic distance measurement for automotive applications. Sens. J., IEEE 11(11), 2636–2642 (2011) 6. B. George, H. Zangl, T. Bretterklieber, A warning system for chainsaw personal safety based on capacitive sensing, in Sensors (IEEE, 2008), pp. 419–422 7. P. Buttolo, S.C. Salter, M.S. Dassanayake, I.J.S. Rankin, D. Ghosh, Ford global technologies LLC (2017). Proximity sensor assembly having interleaved electrode configuration. U.S. Patent 9,548,733 8. J. Ferri, R. Llinares Llopis, G. Martinez, J.V. Lidon Roger, E. Garcia-Breijo, Comparison of E-textile techniques and materials for 3D gesture sensor with boosted electrode design. Sensors 20(8), 2369 (2020) 9. R. Aubauer, A. Dorfner, Microchip technology Germany GmbH, 2020. Electrode arrangement for gesture detection and tracking. U.S. Patent 10,649,488 10. R.H. Bhuiyan, R.A. Dougal, M. Ali, Proximity coupled interdigitated sensors to detect insulation damage in power system cables. IEEE Sens. J. 7(12), 1589–1596 (2007) 11. P. Chen, Q. Yu, Proximity capacitance array sensor based on data aggregation strategy for rainfall detection. Sens. Mater. 30(5), 957–977 12. J. Döring, L. Tharmakularajah, J. Happel, K.L. Krieger, A novel approach for road surface wetness detection with planar capacitive sensors. J. Sens. Sens. Syst. 8(1), 57–66 13. V. Kasturi, S.C. Mukhopadhyay,Planar interdigital sensors based looseness estimation of leather,in 2008 3rd International Conference on Sensing Technology (2008), pp. 462–466 14. A. Nag, S.C. Mukhopadhyay, J. Kosel, Sensing system for salinity testing using laser-induced graphene sensors. Sens. Actuators A: Phys. 264, 107–116 (2017) 15. C. Baby, B. George,A simple analog front-end circuit for grounded capacitive sensors with offset capacitance,in 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) (2013), pp. 1372–1375 16. R. Pallas-Areny, J. G. Webster, “Sensors and signal conditioning”, John Wiley & Sons; Nov. 2012. 17. R. Abhishek, B. George, A new capacitance-to-digital convertor suitable for human proximity sensing, in Proceedings of 19th IMEKO TC-4 Symposium Measurements of Electrical Quantities (Barcelona, Spain, 2013), pp. 250–254. Accessed 16–18 July 2013 18. V. Prashanth, B. George, A direct digital readout circuit for impedance sensors. IEEE Trans. Instrum. Meas. 64(4), 902–912 (2015) 19. L. Areekath, B. George, F. Reverter,An extended study on an interference-insensitive switched capacitor CDC.IEEE Sens. J. 19(18), 8283–8292. Accessed 15 Sept 2019 20. Pediatric Vehicular Heatstroke Fact Sheet [online]. https://www.noheatstroke.org/fact_sheet. pdf. Accessed 06 Sept 2020 21. C. McLaren, J. Null, J. Quinn, Heat stress from enclosed vehicles: moderate ambient temperatures cause a significant temperature rise in enclosed vehicles. Pediatrics 116(1), 109–112 (2005) 22. Datasheet, LM35 precision centigrade temperature sensors, Texas Instruments (1999) [Online]. https://www.ti.com/lit/ds/symlink/lm35.pdf. Accessed 06 Sept 2020 23. K. Tsuzuki-Hayakawa, Y. Tochihara, T. Ohnaka, Thermoregulation during heat exposure of young children compared to their mothers. Eur. J. Appl. Physiol. 72(1–2), 12–17 (1995)
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24. J. Booth, G. Davis, J. Waterbor, G. McGwin, Hyperthermia deaths among children in parked vehicles: an analysis of 231 fatalities in the united states, 1999 to 2007. Forensic Sci., Med., Pathol. 6, 99–105 (2010). [Online]. https://doi.org/10.1007/s12024-010-9149-x. Accessed 06 Sept 2020 25. A. Guard, S.S. Gallagher, Heat related deaths to young children in parked cars: an analysis of 171 fatalities in the united states, 1995–2002. Inj. Prev. 11(1), 33–37 (2005) 26. N.H.T.S.A., Reducing the potential for heatstroke to children in parked motor vehicles: Evaluation of reminder technology. [Online]. www.nhtsa.gov/DOT/NHTSA/NVS/811632.pdf. Accessed 06 Sept 2020 27. M. Rossi, Warning system for detecting presence of a child in an infant seat. US Patent 5 949 340. Accessed 7 Sept 1999 28. J. Smith, Electric field imaging. Ph.D. Dissertation, Massachusetts Institute of Technology (1998) 29. C. Rink, M. Braukus, Nasa develops child car seat safety device. Internet. https://www.nasa. gov/centers/langley/news/releases/2002/02-008.html. 5 Feb 2002. Accessed 06 Sept 2020 30. News, Tesla is working on a sensor that can detect a child left behind in a hot car. [online]. https://www.theverge.com/2020/8/20/21377981/tesla-radar-sensor-child-hot-car-fcc. Accessed 06 Sept 2020 31. R. Abhishek, B. George,A child-left-behind warning system based on capacitive sensing principle,in 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), pp. 702–706 (2013)
Fabrication of Interdigitated Sensors: Issues and Resolution Anindya Nag, S. C. Mukhopadhyay, and C. P. Gooneratne
Abstract The design and implementation of interdigital sensors in the sensing world have been pivotal in the last few decades. Due to the advantages imparted by these designs, researchers all over the world have practiced developing prototypes based on them. The variation in the physical and material specificities of the interdigital sensors varies with their individual applications. In order to develop a range of sensing prototypes for biomedical, industrial and environmental applications, the optimization of the fabrication of these interdigitated electrodes has been done over the years. This chapter highlights some of the research works done on their design, development and implementation, based on a range of fabrication processes. Some of the issues faced by each of these fabrication techniques, as well as the formed prototypes, have also been discussed in the chapter. Finally, some of the possible remedies to address the existing issues have been elucidated, along with a brief market survey that has been mentioned at the end of the chapter.
1 Introduction The exponential growth in the use of sensing technology for ubiquitous monitoring of daily activities has been state-of-the-art in recent years. Since the dawn of laboratorydeveloped sensors, scientists have frequently been trying to include new kinds of applications for the sensors. With this, the range of uses of the research-based sensors has been growing every day. The development parameters for a particular type of sensor is dependent on a lot of factors, including its application, the environment A. Nag (B) Computer, Electrical and Mathematical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia e-mail: [email protected] S. C. Mukhopadhyay School of Engineering, Macquarie University, Sydney, Australia C. P. Gooneratne Saudi Aramco, Darham, Saudi Arabia © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_3
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it will be deployed in and the signal-conditioning circuit it will be embedded to [1, 2]. Among these factors, the application of sensors is the most important one as it decides the processed materials, structure, design and dimensions of the sensors and the fabrication technique. Keeping all these factors into consideration, the structural design has been one specification that the researchers did not focus much in the past years [3–5]. When the application of a sensor is chosen, its dimensions and fabrication technique are two things that get sorted out [6, 7]. Depending on the availability of the electrical support and facilities for the regulation of the generated heat, the decision for the designs of the electrodes is made. Different kinds of microelectromechanical (MEMS)-based and flexible sensors are being developed every year, which are most suitable to be operated for the laboratory-controlled environment [8, 9]. Although the MEMS-based sensors imparted certain advantages like miniaturization, a quick multiplicity of the sensors, low power consumption, high sensitivity, concept of microelectronics and easy integration into systems, there were specific disadvantages associated to them which need an alternation. Some of the associated disadvantages are high production cost per unit, which requires upfront expensive cleanroom facilities, expensive equipment required for characterization and testing the performance. Another major factor leading to the formation of flexible sensors is the rigidness and intransigency shown by the MEMS sensors towards biomedical applications. The attributes for forming flexible sensors were more precise in comparison to the MEMS-based sensors due to their enhanced electrical, mechanical and thermal characteristics. Also, the wearable nature of the sensors has been a major attribute that approved the development and utilization of flexible sensors [10]. Figure 1 [11] shows some of the printing techniques that are
Fig. 1 Representation of some of the printing techniques that are used to develop flexible sensing prototypes [11]
Fabrication of Interdigitated Sensors: Issues and Resolution Table 1 Comparison of some of the techniques that have been used to develop interdigital sensors in MEMS and flexible sensors
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MEMS sensors
Flexible sensors
• Semiconductor device fabrication technique
• Laser-cutting
• Surface Micromachining
• Micro-contract printing
• Bulk micromachining
• Ink-jet printing
• Deep reactive ion etching
• Nano-imprinting
• Laser micromachining
• Screen printings
• Electro-discharge micromachining • Slot-die printing • Hot embossing
• Dry transfer printing
• Micromachining
• Gravure printing
• XeF2 dry phase etching
• Offset printing
• LIGA
• Flexography printing
currently used for developing flexible sensors. The existing fabrication techniques had to be optimized, along with the origination of new fabrication techniques, to overcome the issues faced by the developed prototypes for a particular application. Table 1 shows a comparison of some of the popular techniques that have been utilized so far for developing MEMS and flexible sensors-based interdigitated electrodes. It is seen from the table that a lot of methods have been utilized so far, which have been far enough to develop prototypes with varied efficiency in terms of sensitivity, repeatability, specificity, stability, robustness and longevity [12]. The uses of each of these techniques were based on the application for which the fabricated interdigitated sensors were used. Even though the methods mentioned in Table 1 had been enough, there are still changes need in them, especially in the current era of nanotechnology. With further miniaturization of the sensors to increase their sensitivity and specificity towards the target analyte, these existing techniques have to be improved. A thorough review has not yet been done on the existing techniques, their advantages and challenges. Each of the fabrication methodologies that have been used to develop interdigitated sensors has not analyzed based on the quality of the formed prototypes. This chapter deals with the issues faced by the fabrication techniques during the development and implementation of interdigital sensors for different applications. The work has been separately classified based on the techniques that have been used to form the MEMS and flexible sensors. This categorization would help the readers to understand the attributes imparted in each type of sensor when fabricated using a particular technique. Resistive, capacitive and inductive are the three types in which the sensing prototypes can be operated. Nowadays, most of the academic and industry-based works are done with a combination of two or more ways [13–15]. The researchers and engineers are constantly trying to optimize the sensing systems based on the combination of these operating principles to decrease the fabrication cost while maintaining the
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robustness and efficiency of their performances. In order to develop the sensors operating on these three types, the design of the electrodes has been largely varied [16–18]. The most popular of them being the interdigital electrodes, which operate on capacitive sensing. These types of electrodes have been formed since the 1970s [19–21] when the idea of capacitive sensing was getting popularized among the researchers who were working on a related field. In the 1990s, when the semiconductor sensors were being developed on an industrial scale [22–24], interdigital sensing faced its most popular phase due to the growing interest in capacitive sensing. As this gave rise to MEMS and flexible sensing systems, interdigitated capacitive sensors started to be used as point-of-care devices for a range of applications [25, 26]. Some of the specific advantages of using interdigitated sensing are: • They provide a non-invasive measurement technique to determine the dielectric properties of the insulating and semi-insulating materials. • The prototypes are generally small in size and have a relatively low cost in nature. • Due to the one-sided measurement, the fringing electric fields can be used to determine the characteristics of the material under test. • The parameters of the interdigital sensors can be varied to optimize their performances and power density. • These sensors can be operated at low frequencies, thus achieving lesser attenuations. Interdigital sensors were then started to be operated alongside resistive and inductive sensing to have a combined effect on the detection of the target analyte. The design and development of these interdigital sensors using the above-mentioned techniques have been done substantially over these years [27–29]. But there are still some loopholes that can be addressed, analyzed and rectified for the formed interdigital sensors. This chapter deals with such bottlenecks related to each of the above-mentioned fabrication techniques. The explanation has been done in terms of some of the significant research works done by the researchers working in disparate sensing fields.
2 Working Mechanism of Interdigital Sensors Before heading into the implementation of interdigital electrodes, it is important to understand their operating principle. Interdigital electrodes operate on the principle of the parallel-plate capacitor. Figure 2 [30] shows the schematic diagram of the modification of a parallel-plate capacitor to its co-planar form. The planar form of the electrodes assists in the non-invasive and one-sided measurements. The opposite side of the electrodes, known as the guard plane, is generally sputtered with an insulating material to restrict the direction of the generated electric field to one side. The two electrodes, in common nomenclature, are referred to as the excitation and sensing electrodes. When a time-dependent low amplitude voltage signal is given as an input, the electric field is generated between two electrode fingers of opposite
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Fig. 2 Schematic diagram of the conversion of the parallel-plate capacitor to the co-planar interdigital sensor [30]
polarity. Since the intensity of the generated electric field is low due to the low voltage signal, the number of electrodes is generally repeated to have a stronger resultant electric field. The distance between two consecutive electrode fingers is known as the interdigital distance (d). Due to the planar structure of the electrodes, the electric field bulges between the electrodes. If any material with dielectric properties is kept in contact or in proximity to the generated electric field, the generated electric field penetrates the tested material while traveling between the electrodes. The height of the penetration depth of this generated electric field can be varied by varying the distance between the electrode fingers. This property is called in the pitch, which can be defined as the distance between two electrodes of similar polarity [31, 32]. The performance of the interdigital sensors depends on certain parameters, including fringing fields and their signal strength, interdigital distance, pitch and overall size of the sensing area. The optimization of these factors helps in the detection of the material properties of the sample with high sensitivity. Researchers have done simulations using 3D finite element models (FEM) [33, 34] to design the sensor geometry to obtain the required penetration depth of the electric field by studying the necessary passive electrical parameters. The resultant capacitances are calculated as a function of the number of electrode fingers and the ratio of the width and interdigital distance of the fingers [35, 36]. Parametric equations are formed to obtain the capacitance of the sensors as a function of the mentioned geometric parameters of the sensors. Figure 3 [35] shows the schematic diagram of the interdigital sensor that was used to perform the calculations related to the parametric equations. The calculations were done based on both the presence and absence of the metal as a backplane to the interdigitated electrodes. The utilization of these sensors has been widely done for different healthcare [37, 38], industrial [39–41] and environmental [42–44] applications. For electrochemical sensing, the measurements have been done on the basis of the detection of the change in impedance and current using spectroscopic [45–47] and voltammetry [48–50] techniques. For strain and electrical sensing, the change in the conductance is mostly studied [51–53] with respect to the changes in the input conditions.
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Fig. 3 Schematic representations of the a perspective and b cross-sectional views of the coplanar interdigital capacitive sensor [35]
3 Case Studies with Different Research Works A lot of research work had been done regarding the fabrication and implementation of interdigital electrodes among MEMS and flexible sensors. The development of each of these prototypes has been done with a specific fabrication technique, which helps in achieving the physical attributes required for a specific application. Among the fabrication methodologies that been mentioned in Table 1, a few of the most significant ones have been chosen in the succeeding sub-sections. These techniques have been selected based on their significance in the field of microelectronics, where their frequent utilization has been done to develop MEMS and flexible sensors. These techniques have developed sensors with optimized physio-chemical properties. The explanation related to all of the techniques initially includes the development and implementation of the sensors, followed by the issues that need to be addressed.
3.1 MEMS Sensors with Interdigital Electrodes With the initial growth of semiconductor sensors, MEMS has been a standardized technique for mass production of commercial sensors. Sensors with silicon substrates have been largely preferred due to their stability in the responses, high accuracy in the readings, low drift in the response due to ambient temperature and humidity, excellent signal-to-noise ratio, low hysteresis, high robustness and high repeatability in the responses [54, 55]. In order to process the raw silicon for using them as substrates in the MEMS-based sensors, scientists have chosen a few methods like surface micromachining, bulk micromachining and LIGA (lithography, electroplating and molding), due to their advantages like the formation of sensors with high aspect ratios, the formation of single-crystal devices with excellent mechanical properties and high reliability [56–58]. Among them, the most common one related to the fabrication of interdigital sensors is the semiconductor device fabrication technique.
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The exponential growth related to its use is related to the highly efficient sensors developed by this process.
3.1.1
Semiconductor Device Fabrication Technique
Most of the silicon-based sensors that we use in today’s sensing world has been developed using semiconductor device fabrication technique. This process is a combination of several sub-techniques which involves the alternation in the physiochemical nature of the processed materials. Some of the methods like photolithography, surface passivation, thermal oxidation, sputtering and sonication are used in specific order to design the substrates and electrodes of the sensors. Equipment used for these processes are placed in specialized rooms called clean-room facilities to protect them from dust particles and UV light. The quality of cleanrooms has been categorized based on the minimum size of the particles present in those rooms [59, 60]. One of the recent works related to the modeling and development of interdigital sensors was done by Yunos et al. [61]. The prototypes were formed on FR4 boards, having a copper layer being used as electrodes. These sensors were utilized for estimating the blood glucose levels via determining the changes in the capacitive values. The width of the electrodes was varied between 0.5 and 0.7 mm, followed by determining the resonant frequencies using a vector network analyzer. The characterization was done between 1 and 3 GHz to determine the S-parameters. The highest quality factor was obtained to be 11.72 at a frequency of 2.11 GHz, with the resonant frequencies being at 2.02, 2.11 and 2.14 GHz. Some of the issues related to these sensors are regarding the raw materials used in conjugation with the MEMS technique. With the sensors being developed on FR4 substrates, it is a highly expensive and labor-consuming process. Secondly, multi-layered sensors cannot be formed using these circuit boards. Thus, if the specificity of these glucose sensors needs to be increased, it will be difficult to exert a selective layer on top of these boards. Secondly, the association of high-frequency operation with interdigital sensors has demerits related to it. It not only requires higher input power but also the amount of information transmitted to the receiving unit is also limited. These FR4 boards should be replaced with single-crystal silicon substrates to perform experiments at lower frequencies. Also, with the amount of work done on glucose sensing, high sensitivities need to be obtained with the presence of a specific layer that would act as a template to the glucose molecules. The wearable nature is another point that needs to be noted for deploying these sensors for point-of-care performances. Zhang et al. [62] showed the development and implementation of piezoelectric sensors via thin-film resonators on silicon substrates. This system-on-chip was formed using a fully-differential configuration to eliminate the negative effect of the feedthrough. The insertion loss and signal-to-background ratio obtained with these MEMS-based sensors were 4.27 and 42.47 dB, respectively. The developed sensors had a length of 300 microns and a width of 160 microns, which was supported by two pairs of tether beams. The piezoelectric layer was sandwiched between a metal layer and a single-crystal silicon layer. The operating mechanism of the sensors was
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driven by this metal layer formed with aluminum nitride. This metal was a pattern on the layer having a thickness of 500 nm. The ground electrode of the sensor was formed with highly-doped silicon using phosphorous as a dopant. The responses of the sensors were obtained at the electrode, where the signal was generated due to the piezoelectric effect. Some of the issues related to the fabrication techniques are the intermediate steps followed to develop the sensors. Firstly, the deep-ion etching technique that was used to define the mechanical structure has certain disadvantages like the probability of surface damage, low level of selectivity and low etch rate. This degrades the quality of the sensors, and subsequently, their performances. Instead of reactive ion etching, alternative etching techniques such as wet etching should be used to have a better quality of the surface. Also, although the inert loss has been reduced in these sensors in comparison to other reported research, it is still large enough for systems operating for a long time. The formation of other substrates using as polyvinylidene fluoride (PVDF) can also be considered instead of silicon due to certain attributes like low acoustic impedance, low permittivity, high thermal and chemical stabilities. Other than LPG sensing, the detection of benzene gas can also be emphasized upon using MEMS-based sensors, as shown by Ku et al. [63]. Platinum (Pt) metal was used to form interdigitated electrodes along with an integrated micro-heater in the sensing system. An additive layer of tungsten-oxide (WO3 ) on top of the sensing surface to increase the sensitivity towards the benzene gas. Figure 4 [63] shows the schematic diagram of the fabrication process of the thin-film gas sensors. The deposition of
Fig. 4 Schematic diagram of the fabrication interdigitated sensors based on WO3 thin-films [63]
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chromium and platinum was done as the adhesive and conducting layers, respectively. The lift-off technique was used to pattern the micro-heater and interdigitated electrodes. Finally, RF-magnetron sputtering was done separately on the sensing surface using 99.99% purity of tungsten, followed by the oxide layer. The pressure was fixed at 10–6 Torr during the pre-sputtering and sputtering processes for 10 min and 50 min, respectively. Prior to the experiments, the sensor was annealed from 25 to 500 °C for over 60 min. Oxidization occurred on the heated WO3 film when it got exposed to the benzene concentrations. This changed its electrical conductivity, and as a result, the resistance of the sensors. The sensors achieved an optimized working temperature of 300 ˚C, to obtain sensitivity, the limit of detection and response time of 1 k/ppm, 0.2 ppm and 35 s, respectively. The limitations of these sensors are related to the additional need for a masked template to form the electrodes. Also, the use of SiO2 serves as better substrates than WO3 to form semiconductor sensors. This reason behind this could be attributed to the different forms of WO3 that can be used to form the sensors. Since the stoichiometric form of WO3 is an insulator, the use of the non-stoichiometric form is generally preferable to form the substrates which operate as n-type semiconductor [64]. There is no mention of the type of WO3 here, which shows its arbitrary nature. Zhou et al. [65] developed a reflector array that as used for the enhancement of the quality factor. The sensors were developed with aluminum nitride and silicon as electrodes and substrates, respectively. The sensing arrays were configured in the shape of fish scales, that were subsequently used for enhancement purposes by reducing the anchor loss. The arrays achieved a 3.5 folds’ increase in the quality factor in comparison to the traditional design. This was obtained by reducing the reflector array inside in the x-direction to integrate it inside the resonant body. The sensors in the array comprised of a thinfilm piezoelectric layer that is composed of aluminum nitride between two electrodes. The thicknesses of aluminum electrodes were 1 micron, where the whole system was formed on substrates formed with anisotropic doped silicon. The thickness of the substrates was 10 microns, which had an additive layer of silicon-on-insulator. The disadvantages related to this work can be attributed to the electrodes developed with aluminum. Even though aluminum serves as lightweight and corrosion-resistant material, but the formation of a thin oxidative layer degrades its performances in comparison to other inert metals like gold. Another disadvantage that can be pointed out was the small thickness of the silicon substrates. If the thickness of the substrate is 10 microns with the presence of a one-micron thickness of the interdigitated electrodes, the resolution and performance would be poorer in comparison to their bulk counterparts [66]. One of the interesting works was shown by Wu et al. [67], where the design, fabrication and employment of piezoelectric MEMS generators were done for scavenging the mechanical energy of the ambient vibrations and converting them into electrical energy. These generators had the potential to be used as prototypes that consume and harvest low-intensity power from the environment. The sensors consisted of a beam-shaped structure that includes interdigital electrodes, silicon wafer and a piezoelectric (PZT) layer that laminated the substrate. The PZT layer that was formed with
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lead zirconate was primarily responsible for the transformation of the mechanical strain into electrical charge. The piezoelectric material was poled in ±x directions with the help of the PZT deposition chamber. The vibrations of the micro-cantilever between the substrate and electrodes induced mechanical stress in the PZT layers, which was then subsequently converted into electrical energy. The charges generated with this generated were obtained as the output from the interdigitated electrodes. The interdigital distance between the electrodes correspondingly varied the obtained power and voltage. The experimental values of the interdigital distance consisted of 20, 30 and 40 μ, with 30 μ obtaining the maximum output power and voltage. The micro-cantilever structure had a dimension of 3000 × 1500 μ, along with a PZT layer of 12 μ. The issues related to this structure was both the presence and dimensions of the proof mass, which assisted in the vibrations to the PZT layer. With the presence of the proof mass at the free end of the cantilever beam, the output voltage and power also varied as a function of the rate of acceleration of the movement due to the subsequent variation of the resonating frequency. Also, only three values of the interdigital distance were considered, where much better sensitivities were obtained with interdigital sensors having lesser distances between two consecutive electrodes. Optimization should have been done to detect till lowest interdigital distance till which the sensors obtained the highest sensitivities. One of the significant research depicting the use of interdigitated electrodes in CMOS sensors was done by Zhao et al. [68]. These sensors, along with polysilicon heaters, were used for humidity sensing purposes. Industrial standard CMOS process and MEMS post-processing steps were used to process polyimide due to its wide range of linearity. Aluminum electrodes were employed to form the interdigital sensors, where the heater was placed under the electrodes. The reliability was improved by using the etching passivation layer between the electrodes. Silicon dioxide (SiO2 ) and silicon nitride (Si3 N4 ) were used as the substrates and passivation layer, respectively. The thicknesses of thermally-grown SiO2 and passivation layers were 0.045 μ and 0.45 μ, respectively. Low-pressure Chemical Vapor Deposition was used to etch the SiO2 by 0.35 μ for proper deposition of Aluminum electrodes. The packing of the sensors was done to improve the hysteresis and recovery time of the prototypes. High repeatability and good linearity were observed with the sensors for the entire testing range. After the fabrication of the sensors, a thin polyimide layer was heated at different temperatures of 80 °C, 120 °C and 250 °C for different times of 30 min, 1 h and 2.5 h, respectively, and subsequently coated on the electrodes. The sensors were able to respond to a humidity ranging between 30% RH and 90% RH, having a response time of 32 s and a recovery time of 24 s. These sensors had a couple of issues related to the raw materials used during the fabrication process. Based on the provided Scanning Electron Microscopic (SEM) images, the coating of polyimide film was not uniform in nature. This definitely affected the responses of the sensors. Also, the comparative values of the R2 values before and after the packaging did not have much difference. This could be attributed to the use of FR4 boards that were used for packaging purposes. These boards have uneven surfaces, which affects in maintaining the experimental conditions inside the chamber.
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Mehran et al. [69] showed the use of interdigitated electrodes on silicon substrates via capacitive accelerometers for possible applications in earthquake sensing. The fabrication was based on the use of micromachining and deep reactive ion etching techniques on silicon to form the conjugation of anisotropic back-side and vertical front-side. Two sub-classes of passivation and etching were used through a hydrogenassisted deep etching process. The substrates were formed with a p-type silicon wafer having a thermally-grown oxide layer of a thickness of 0.3 μ on top of it. Chromium layers were deposited on the front and back sides of the prototypes as their back-plane and electrodes, respectively. The silicon from the bottom surface was etched a couple of microns extra to avoid the short-circuiting of the electrodes. The prototypes were made sensitive to inclinations and accelerations by incorporating silicon-based nanostructures. The sensors were tested by tilting them from 0 to 90° to detect the capacitive changes in terms of pF. Some of the loopholes related to the fabrication of these sensors can be related to the dimensions of the prototypes and synthesis of specific parts of the sensors. For example, the value of the vertical etching that was done to avoid the short-circuiting should be optimized to calculate the effect on the generated electric field. Also, if 1–2 μ extra is done, how does it affect the uniformity in the fringing electric fields. Also, after the deformation of the interdigitated electrodes in the presence of water droplets, the intensity of the reformation of the fingers back to its real shape is also unknown. It is significant to know if there is any offset after the first primary reformation and then for the subsequent cycles. This would affect the effective interdigital distance between the electrodes and the generated electric field.
3.2 Flexible Sensors with Interdigital Electrodes With the enhanced properties of flexible sensors, these prototypes have been utilized with interdigitated electrodes to a greater extent. Unlike MEMS-based sensors, the flexible sensors have deployed the interdigitated electrodes for both electrochemical and strain-sensing purposes. Among the several processes that have been utilized to form the flexible sensors, below are some of the popular ones that are considered by the researchers. Each of these techniques has its own advantages, which leads to the fabrication of sensors with unique physical properties.
3.2.1
Laser-Cutting Technique
With different kinds of laser systems getting commercialized, the researchers are opting for the laser systems that can generate ultra-flexible sensors with high sensitivity. Other advantages of these systems are a low cost of production, quick fabrication process, high accuracy and precision cuts, roll-to-roll production, sensors with low power consumption, lesser waste of processing materials and minimized damage to the prototypes during production process [70]. These systems are operated with
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different kinds of parameters like power, frequency, speed, pulse per inch (PPI) and others. All these parameters are optimized to generate sensors specific to a particular application. One of the works, as shown by Hao et al. [71], was related to the development of NO2 -based gas sensors using two-beam-laser interference (TBLI). The reduction of graphene oxide (GO) was made to form prototypes that can be used for sensing at room temperature. The dissociation energies provided by the two-beam laser reduced the GO into graphene nanostructures. The operating principle was based on splitting a laser beam having a wavelength of 355 nm into two branches. Interference occurred during the laser exposure, which was identifiable due to the reduction of the GO film through the transparency of the sinusoidal nature. These nanostructures for sensors using molecular adsorption techniques at acceleration response and recovery rates. The experiments were conducted at 20 ppm of the gas. The sensors obtain a response of 1.27 in terms of resistance, along with a response time of 10 s and a recovery time of 7 s. These values obtained with graphene nanostructures were higher than those obtained with thermally reduced graphene oxide. The resistive response, response time and recovery time of the thermally-reduced graphene oxide were 1.04, 34 s and 45 s, respectively. The issues related to the fabrication of these sensors can be specifically targeted to the further improvement that can be done to the two-beam laser interference. It is arbitrary if the splitting of the laser beam was done into two branches or not. Also, the choice of the wavelength of the laser beam was unknown. Optimization needed to be done on the splitting of the laser, which could have further improved the response and recovery times. The specifications of the formed graphene nanostructures were also unknown. Also, the power used for forming the interdigital electrodes on the ceramic substrates was 0.15 W. This value is very low as compared to the graphene nanostructures formed by the laser-ablation technique [72, 73]. Heng et al. [74] showed the implementation of flexible sensors that were developed using the laser-cutting process. The prototypes were used as insole sensors for the detection of gait analysis. Surface processing of a conductive rubber was done to form pressure-sensitive insoles for real-time pressure measurement. The sensors were formed using inkjet-printed electrodes on flexible substrates for pressure measurement with good sensing performance. Multi-Walled Carbon Nanotubes (MWCNTs) and Polydimethylsiloxane (PDMS) were used as electrodes and substrates, respectively, due to their individual advantages. Initially, a pressure-sensitive layer was formed by mixing MWCNTs, PDMS and n-hexane at a ratio of 20:40:1. After curing these samples, a polyimide layer was put on top of the substrate prior to the lasercutting process. The laser cutting was done using a power of 15 W and a speed of 5% to form the pressure-sensitive units. At last, interdigital electrodes were formed on the polyimide layer during the packaging of the sensing unit. The interdigital electrodes were patterned with silver nanoparticles for conducting purpose. Figure 5 [74] shows the schematic diagram of the steps of the fabrication of the pressure sensors. The responses were analyzed in terms of resistive signals which were wirelessly transmitted to the monitoring unit. The analysis was done based on the 60-gait-cycle data that was selected from the walking experiment.
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Fig. 5 Schematic diagram of the fabrication of laser-induced interdigital sensors [74]
The bottlenecks related to this work can be associated with the relation between the fabrication process and processed materials. The use of the polyimide layer on top of the pressure-sensitive layer is questionable, especially for the fact that Young’s Modulus for polyimide is very high [75]. The second loophole would be the amount of MWCNTs mixed with PDMS during the formation of a pressure-sensitive layer that needs optimization as the amount of nanotubes added is very high. Sensors have also been developed much lesser amount of MWCNTs have been added to PDMS to form nanocomposite-based sensors [76]. Nie et al. [77] showed the development of the graphene-based capacitive sensors for measuring the dew point via controlling the active temperature. Laser-induced graphene was developed from commercial polymer films and transferred on PDMS substrates to form interdigital electrodes. The humidity sensor was formed by using this laser-induced graphene oxide to form a thin-film layer via the electrospray technique. Kapton tapes having a thickness of 50 μ were attached to the silicon substrates for the laser-ablation process. A CO2 -based laser with a wavelength of 10.6 μ was used to form graphene out of the Kapton tapes. Liquid PDMS was poured on the formed graphene and cured to use the laser-induced graphene as electrodes of the sensor. This was followed by diluting the graphene oxide solution before it was used for the electro-spraying process on the sensing area of the prototypes. A dew point temperature of 10.5 °C DP was set to test the sensors. The capacitive values of the sensors increase linearly with the decrease in temperature. After a certain value, the capacitive values saturate and become constant. The issues with these sensors can be particularly associated with the steps subsequent to the laser-ablation process. When the liquid PDMS was added to the induced graphene, the nanostructures and PDMS formed a composite subsequent to the curing process. This decreased the overall conductivity of the graphene. Also, the electro-spraying technique used to coat the sensing area with a graphene oxide solution is not reliable. The disadvantage is that this process cannot be used on templates with existing pores. The sensing area on which the electro-spinning of the graphene-oxide solution was done consisted of pores due to the presence of graphene nanostructures. Instead, other techniques
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Fig. 6 Schematic diagram of the steps of fabrication of interdigital electrodes with laser-cutting on conductive fabrics [78]
like the dip-coating process can be used for a greater effect of the graphene-oxide solution. Atalay et al. [78] showed an intriguing work on the use of interdigital electrodes with capacitive, textile-based sensors. These prototypes have been formed using conductive fabric that was knitted inside the silicone matrix to form interdigitated electrodes. Figure 6 [78] shows the schematic diagram of the steps of the fabrication of the conductive fabric-based sensors. Eco flex 30 was used as the substrates due to their high elongation limit and biocompatibility. The embedded samples were cured in the oven for an hour at 60 °C, followed by laser-cutting the samples to form the interdigitated electrodes. A power of 40 W and a speed of 5% was used to form the interdigitated electrodes, and the excess fabric parts were subsequently removed from the samples. The prototypes were used to determine the movement of the knee joints during different scenarios. The sensors showed a high linear output of R2 = 0.997. The response time and resolution of the sensors were 50 ms and 1.36%, respectively. The issues related to these sensors can be associated with the embedding of the conductive fabric done within the silicone elastomers. The embedding of the fabric and the elastomer deters their combined stretchability, as well as changing the Young’s Modulus. This would create problems to determine their individual effects when the sensors were used for monitoring of knee joint movements. Another issue is the combination of high power and low speed used for the laser-cutting technique to form the interdigital electrodes. Even though the electrodes might be formed, the amount of heat generation with this combination creates minor cracks on the conductive fabric. This reduces the sensitivity and robustness of the sensors. Dupla et al. [79] showed the design and fabrication of high-temperature sensors based on the surface acoustic wave (SAW) generation and propagation. The operating principle of the sensors was based on the piezoelectric non-ferroelectric
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glass–ceramics that contained fresnoite crystals. These sensors could operate up to 900 °C through the generation and reception of SAW using interdigital electrodes. The coupling of the alternative polarities of the fingers and piezoelectric effect on the input sinusoidal waves created Rayleigh waves. A binding layer consisting of 55% of copper (Cu), 45% of nickel (Ni) and platinum was sputtered with a thickness of 200 nm on the glass–ceramic surface prior to the laser-ablation process. An Nd: YVO4 microsecond pulsed laser was used to form the interdigital electrodes and remove the residual layer. The issues related to these sensors can be attributed to the use of high frequency with interdigital sensors. Although these electrodes were used in conjugation with the piezoelectric effect to create SAW, the individualistic effects of these phenomena would have a greater effect. The interdigital distance of these sensors are also unknown, whose optimization would be needed to have a higher intensity of SAW. The value of the wavelength or pitch needs to be optimized using FEM to detect its value that would avoid the compensation of the polarization effect during its conjugation with the piezoelectric effect. Hammarling et al. [80] depicted the development of pH sensors using laserprocessed interdigitated sensors. The sensors had a broad range of operation that was formed with laser processing and blade coating techniques. A coating of hydrogel was used to depict the pH ranging between 2.94 and 11.80. The response time was around 3 min, with the stability of the responses being reached after 4 min. Polyethylene terephthalate (PET) films were used as substrates where a thin-film gold layer was used as the electrodes having a thickness of 105 μ and 30 nm, respectively. The laser patterning was done using a 355 nm nanosecond pulsed laser ablation system that had a spatial resolution of 10 microns. The width and interdigital distance of the electrodes were 120 μ and 40 μ, respectively. Two additional layers of SU8 and acryl terminated oligo beta-amino ester’s (AOBAE) were used as insulating layers to avoid the contact of the pH solutions with the electrodes. The thickness of the SU8 layer was around 4 ± 1 μ, whereas the hydrogel (AOBEA) layer had variable thicknesses of 5.5 ± 3 μ, 18.5 ± 3.5 μ and 30.5 ± 7 μ. The standard deviations obtained at a time duration of 1200 s for a pH of 7.12 and 8.38 are 3.37 pF and 4.69 pF, respectively. The bottlenecks related to the fabrication part of these sensors can be related to the conjugative use of two additive layers on top of the sensing area. The primary motive of the use of interdigital electrodes is to determine the properties of the material under test via the penetration of the electric field through it. When the presence of the additive layers, even though the electrodes are getting protected from the tested solutions, the generated electric field also could not penetrate properly through the different pH solutions. Also, the range of the tested pH solutions was not capable of affecting the electrodes. Although the hydrogel layer added on top of the interdigital electrodes assists in the sensitivity of the prototypes towards the tested pH concentrations, certain advantages like weak bonding of hydrogels create an additive capacitive layer between the hydrogen and electrodes, which leads to erroneous results. Bellan et al. [81] showed the manufacturing of ultrasonic interdigital transducers on piezo-polymer films that can be used as carbon epoxy composites in spacecraft, satellite and airplanes. Metalized polyvinylidene fluoride (PVDF) was used
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as a singular processing material where laser ablation was done to form interdigital electrodes. A wavelength of 8 mm was used to operate with Lamb waves to form piezopolymer transducers. Migration of CAD drawing and Nd: YAG laser marking tools were used to form electrodes on the PVDF films. The thicknesses of the PVDF films and metalized gold nanoparticles were 100 and 10 μ, respectively. The processing time required to form each of the prototypes was around one minute. Optimization was done on the laser micromachining process to avoid mechanical damage due to overheating. After the interdigital electrodes were formed, the PVDF material in between the fingers was depolarized in order to decrease the cross-coupling between the fingers. But one of the disadvantages of this system can be realized through the use of lasers on the PVDF thin-films. Due to certain disadvantages like high melting viscosity and inferior scratching and marrying resistance, the use of the laser ablation on these thin-films can be degrading to the quality of the substrates [82]. Another issue can be related to the requirement of optimization of the width and interdigital distance of the electrodes that can generate an electric field with the highest penetration depth. Also, the lamination of the interdigital electrodes should be done on thinner carbon fiber reinforced plastic composites. This is because, with thicker composites, the overall flexibility and stretchability of the sensors gets reduced to a great extent. The optimal thickness of the plastic composites would be double of that of the metalized PVDF films.
3.2.2
Screen Printing
The next most popular technique used in fabricating flexible sensors with interdigital electrodes is the screen-printing process. This process has been used since the 1800s where a mask has been designed to form the electrodes. Different kinds of conductive inks depending on their electrical conductivity, surface tension, specific gravity, adhesion, viscosity and curing are being chosen for forming the electrodes by transferring the ink through a mask on the substrates. It has certain advantages like high-quality output, simplicity, affordability, speed, high durability of the sensors and versatility in the use of substrates [83, 84]. Here, some of the significant works has been explained along with the loopholes related to their fabrication technique. Alsuradi et al. [85] explained the implementation of wearable biomedical sensors via screen-printed circuit boards on bio-degradable hydrocolloid dressings. Screen printing of passive elements was done along with the preparation and characterization of the surface of the hydrocolloid to connect the former using conductive silver paste. FEM simulations were done to show the appropriateness of the use of thick-film screen-printed passives for developing wireless prototypes. These sensors contained spiral inductors, serpentine resistors and interdigital electrodes that were subsequently used for humidity sensing applications. All these passive elements were designed using Computer-Aided Design (CAD) tool to form masks for printing purposes. The area limitation of the hydrocolloids was considered prior to the formation of the passive elements. These hydrocolloids were smoothened, applying an additive transparent layer of Polyvinyl Acetate (PVA) for filling the micro-features.
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Finally, the screen-printing was done using a conductive silver paste to execute the designs. The issues related to the fabrication of these devices is the proximity of the three types of electrical elements present on the hydrocolloids. The presence of these three elements within a small area interference with each other’s working phenomenon, especially with that of the spiral inductors and interdigital electrodes. Also, some of the disadvantages of flexible printed circuit boards like high cost, increased risk of damage during handling, more difficulty in assembly and difficulty to repair in case of faults or issues [86]. Interesting work was shown by Nomura et al. [87], where a wearable blood leakage sensor was developed using a screen-offset printing technique. Cotton textiles were used as substrates where interdigital electrodes were formed to test blood in submegahertz frequency ranges. The dispersion of blood was done at volumes of low concentrations of 15 μl. The novelty of this work includes two the conjugation of two techniques, namely screen-offset printing and specific dielectric dispersion processes. In order to avoid the permeation of the ink through the text in the conventional screen-printing technique, screen-offset printing was used, which used an initial silicon-based roll-blanket to print the patterns. Then, the conductive ink was transferred to the final substrates to transfer the patterns. The printing of the curable conductive ink was overprinted two to three times on a silicone blanket in order to avoid the possibility of disconnection of wiring. PDMS and a base film were used as silicone blankets where the initial printing of interdigital electrodes was done. The width and interdigital distance that was printed on the textile were 500 μ and 1000 μ, respectively. The detection was done using an impedance analyzer to determine the impedance and phase difference between two situations before and after dropping blood on the sensing area of the prototypes. The bottlenecks related to the fabrication process of these sensors can be associated with the parameters used for the screen-offset printing process. There is a high risk in the change in the properties of the conductive ink during the dual transfer of the conductive inks on the blanket and then the substrate. The use of conductive inks on the textile also depends on the porosity of the substrates. Another issue could be associated with the probability of a reduction in the quality of the electrodes on the final substrates. The edges of the electrode lines could be distorted due to the permeability of the textile-based substrates. Soukup et al. [88] showed the development of novel organic sensors based on the deposition of layers using the screen-printing technique. Organic humidity sensors were formed with alumina substrates and a mixture of gold and resinate paste electrodes. Interdigital electrodes were formed with the width and interdigital distance being 50 μ. Additive protective and sensing films were provided by adding polymer and phthalocyanine layers, respectively. Optimization was done to achieve high reproducibility and high resolution of the printing lines. The electrodes were formed using an organometallic compound containing resinate paste and gold. The additive sensing film was formed using sulfonated nickel phthalocyanine (NiPc(SO3 Na)4 ) to add semiconducting properties to the sensor. Polystyrene was used as the passive protective layer to add stability and sensitivity to the prototypes. The coating of the screen was done using high definition photo-emulsion with a mesh of 3 μ. The
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sensing layer was added using the spin-coating technique. The thickness of this layer as optimized to increase the sensitivity by minimizing the influence of the dynamic characteristics of the sensors by absorbing water molecules. These phthalocyanines imparted the electrons and ions to the sensing film to display the change in the electrical properties of these sensors. This is due to the existence of conjugated bonds in the molecular chains of the compound. The issues related to these sensors can be linked to the conjugative presence of two layers on top of the electrodes. Although the phthalocyanine imparted additive semiconducting properties to the interdigital electrodes, polystyrene being insulator in nature can interfere with the generated electric field. The ratio of gold and resinate that was used to form the electrodes was also unknown and required further optimization regarding the specific amount of the presence of metallic content. Tan et al. [89] worked on an interesting area where low temperature co-fired ceramic technology was used to develop interdigital electrodes-based capacitive pressure sensors. The electrical circuit consists of an interdigital capacitor and a constant inductor. The inductors and capacitors were formed by screen-printing technique. The fabrication process was carried out in seven steps, namely cutting samples, pattern printing, stacking, lamination, slice, sintering and sealing. After the samples were cut using lasers, proper fill printing was carried out to avoid the disconnection of any of the formed sensor circuits. Then, sealing was done to fill the cavities with carbon film to avoid transmogrification. Then, the sensors were laminated by pressing them in water and subsequently cutting into square pieces of 40 mm. Finally, the sensors were sintered in a box and sealed to complete the process. A wireless mutual inductance coupling method was used to conduct pressure-sensing experiments. The sensitivity obtained with developed sensors was around 273.95 kHz/bar when the experiments were conducted at a pressure below 2 bar. The max readout distance operated with external antennas at around 600 °C was 3 cm. The potential applications of the developed sensors were the detection of gas pressure in harsh environments. The issues related to these sensors can be attributed to the association of the sintering process with the carbon-films. Due to the negative temperature coefficient of pure carbon films, the increase in the temperature in the sintering process leads to a corresponding increase in the resistance values. This destroys purity and degrades the performance of the sensors. Qi et al. [90] examined the properties of the screen-printed zinc oxide-based sensors that were developed humidity sensing. Flower-like zinc oxide nanorods were used to form sensors that showed high sensitivity, fast response and recovery times, small hysteresis and high stability of the responses of the sensors. Figure 7 [90] shows the schematic diagram and optical image of the developed prototypes. ZnO nanorods were mixed with DI at a weight ratio of 100:25 to form a paste, which was subsequently used to screen-print on the substrates. The substrates of sensors were formed with ceramic, while interdigital electrodes were formed with silver and palladium. Five pairs of interdigital electrodes were formed with a thickness of 10 microns. The samples were finally heated at a temperature of 60 °C for 5 h. A protective layer was coated on the sensing area of the prototypes by using a solution formed with ethylcellulose solution and ethyl ester acetate. The change in impedance
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Fig. 7 a Schematic diagram of the structure of the developed prototypes. b Top-view of the optical image of the sensor [90]
was detected with respect to the corresponding change in the relative humidity (RH). An input voltage of 1 V and a frequency of 100 Hz were used as input parameters during the experimental process. A range of 11 to 95% of RH was tested to obtain a response and recovery times of 5 s and 10 s, respectively. The issues related to the fabrication technique of these sensors can be associated with the use of ceramics as substrates. Along with some of its disadvantages like easy damage and low impact strength, the biggest limitation would be the presence of cracks due to the highly fragile nature of these substrates. Also, the formation and employment of ZnO-based paste for formed, forming an additive layer for the formation of electrodes can be disadvantageous due to the weaker fabrication reproducibility and higher weakness in comparison to bare solid materials. Kulha et al. [91] showed the development and deployment of low-cost capacitive systems where screen-printing and lamination techniques were used to form the electrodes. PET foils were used as substrates along the electrodes synthesized with a paste formed with silver and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS). The silver paste was cured at 121 °C for 15 min, along with the curing of PEDOT: PSS at 110 for 5 °C minutes. The thicknesses of the silver layer and PEDOT: PSS layers were 10 μ and 300 μ, respectively. Microcontrollerbased systems were formed with interdigital sensors which had a range of length of 10 mm and 15 mm and width/interdigital distance of 300–800 μ, respectively. The connections of the microcontroller with other passive components were made using silver conductive paste. The external terminal board was connected with the printed sensors using silver adhesive and thin copper wires. Finally, the entire structure was covered with a PET foil with a thickness of 80 μ. This layer served both as a protective and dielectric layer. Experiments were conducted with these sensors with varied conductivities and dielectric constants. The highest sensitivities of 0.7 pF/mm and 0.08 pF/mm were obtained for water and oil, respectively. The resolution of the sensors ere 0.1 mm. The loopholes related to this work can be attributed to the additive layer that is added on top of the sensing area of the prototypes. The presence of the PET layer on top of the electrodes deters with the electric field generated from the interdigital sensor. This changes the overall permittivity of the sensors. Also, there
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is a probability that the application of heat with the hot rollers on the lamination foil might change the properties of the foil [92]. Another interesting work done on the development of low-cost, flexible sensors using the screen-printing technique was shown in [93]. Pressure-sensitive ink was used for screen-printing purposes to develop prototypes that had an operating range of 0–2 MPa. The advantages of these sensors are their low-cost, high mechanical flexibility and non-invasive mode of measurement. Commercial polyimide films having a thickness of 5 μ were used as foils on which interdigital electrodes were formed using the screen-printing technique. The polyimide films were placed on substrate wafers prior to the screen-printing process. The conductive silver paste was used as the processing material for screen-printing of the electrodes of a thickness of around 3 μ. The printing purpose was done with a mesh having a mesh size of 180 meshes per centimeter. A two-component, intrinsically pressure-sensitive ink was deposited on top of the electrodes. The testing of the developed prototypes was done using a stamp having a dimension of 10 mm by 10 mm. The changes in the responses of the sensors were determined in terms of resistance with respect to pressure. The loopholes with this work can be related to the processing materials associated with the fabrication process. Firstly, the electrical conductivity and thickness of the pressuresensitive ink should be optimized. The deposition of this layer on top of the electrodes is also not mentioned. Certain techniques like electrospinning and spin-coating can be used to coat the sensing area of the prototypes. Secondly, other polymers like PET or PDMS could have been used for developing the electrodes instead of polyimide, due to the low surface tension of the latter. Polymers like PDMS, when cured, have high durability to hold the screen-printed conductive ink.
3.2.3
Gravure Printing
This is the next most accepted type of printing process that has been used to develop interdigital electrodes-based flexible sensors. This process is similar to that of the screen- printing, with a difference of applying the conductive ink from the cylinder to the substrate. The advantages of this process include quick roll-to-roll production, high quality and consistent printing quality and relatively low labor costs. A few significant research works have been mentioned below, along with their loopholes. Pudas et al. [94] showed the development of capacitive and inductive sensors based on high-resolution printing done on ceramic substrates. Hydrocarbon inks were used to form the electrodes to analyze certain attributes like ink flow, image distortions, ribbing, scooping, streaking and groove blocking. Grauel dry-offset printing machine was employed for the printing purpose that had a moving roller with a diameter of 60 mm. The substrate table was fixed along with adjustable gravure. The gravure was fixed in the horizontal direction while being adjustable in the vertical direction. A doctoring unit was designed consisting of two knives at fixed angles of 60°. Each of the knives was moved in opposite directions. When one knife was doctored, the other one was lifted off the gravure surface. The glass substrates that were considered for the experiments had a thickness and purity of 0.63 mm and 96%, respectively.
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The printing as done using hydrocarbon binder ceramic inks that contained 72.5% inorganic solid load. The solids consisted of 70% silver and the rest of it was made of glass-frit that assisted adhesion to the alumina substrates. Some of the materials that consisted of organic components were non-polar resin, solvent compatible with the resin and thixotropic agent. The issues related to this work can be related to the conjugation of the processing materials with the fabrication technique. The concentration of the hydrocarbons needs to be optimized as the increase in the concentration limits the mechanical flexibility of the formed inks [95]. Another issue is the use of alumina substrates with this type of printing process. The disadvantage of alumina substrates is low toughness and poor thermal shock resistance that cannot withstand an increase in temperature during the printing process [96]. Reddy et al. [97] showed the development of interdigital electrodes-based electrochemical biosensors using a rotogravure printing technique. The substrates and electrodes of the sensors were formed using PET and silver nanoparticles, respectively. These silver nanoparticles having an average size between 20 and 30 nm were used for the metallization of the sensors. The fabricated sensors consisted of 8 pairs of electrode fingers, having a length, width and interdigital distance of the electrodes were 8600 μ, 200 μ and 200 μ, respectively. The bio-sensing experiments conducted with the formed sensors included electrochemical impedance spectroscopic (EIS) detection of cadmium sulfide, lead sulfide, D-proline and mouse Ig G. The sensors were tested with an input voltage of 100 mV and a frequency ranging from 1 Hz to 1 MHz. The responses were collected on a desktop using a customized LabVIEW program. The loopholes associated with this work can be related to the use of PET as substrates for the sensors. The increase in temperature for gravure printing can be disastrous for PET as exposure to excess heat creates deformation of the material [92]. Also, exposure to excess heat emits harmful gases. Xiao et al. [98] described the fabrication and implementation of microsupercapacitors (MSCs) based on electrodes formed with hybridized conductive materials. These hybrid materials were formed using sulfonated reduced graphene oxide (S-rGO) and molybdenum sulfide (MoS2 ) nanoflowers. The interdigital electrodes were formed on flexible polyimide substrates. Figure 8 [98] shows the schematic diagram of the fabrication process of the hybrid sensors. After the formation of reduced graphene oxide (rGO) using Hummer’s method, sulfonating was done by treating the rGO with aryl diazonium of sulfanilic acid. Then, S-rGO was mixed with sodium molybdate and sodium hydroxide to obtain a pH of 6.5. Finally, a solution was formed using l-cysteine and DI, and subsequently heated at 240 °C for 24 h. Then, centrifugation was done to collect black precipitate which were mixed with MoS2 @S-rGO to prepare the conductive material for gravure printing purposes. Finally, polyimide was cleaned with DI water using ultra-sonication and reactive ion etching techniques for using it as substrates. After the gravure printing of the electrodes, a silver paste was printed on top of theMoS2 @S-rGO active materials. Finally, KOH-PVA gel was used to cover the channel area of the interdigital electrodes as a protective layer. The developed MSCs had a high specific capacitance, energy density and power density of 6.56 mF/cm2 , 0.58 mWh/cm3 , 12.4 mW/cm3 , respectively. The sensors achieved high stability with a loss of just 9% of the maximum
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Fig. 8 Schematic diagram of the fabrication of interdigital electrodes formed with sulfonated reduced graphene oxide and molybdenum sulfide [98]
capacity after experimenting with them for over 1000 cycles. The bottlenecks related to this work can be related to the use of PVA as a composite as a protective layer. The composites formed with PVA has a high probability of being fragile when used as thin-film layers, so it should be avoided to be deployed as a protective layer on the sensing surface [99]. Also, the use of graphene for forming composites to develop the electrodes has certain disadvantages like non-uniform dispersion and the existence of a number of layers that affect the characteristics of the electrodes [100]. Another use in the employment of graphene for developing interdigital-based sensors with the help of gravure printing was shown by Zhang et al. [101]. Interdigital supercapacitors were formed with crumpled graphene ink on polyimide substrates, where magnesium hydroxide nano-sheets were inserted as nano-spacers into the layers of graphene oxide. This asserted oxygen-containing groups, which assisted in the ionic transport and exposure of the electrochemically active layer. The templateassisted graphene nano-sheets were optimized by mixing magnesium oxide and graphene oxide at different mass ratios of 15:1, 10:1 and 5:1, respectively. The optimal capacitive properties were achieved for the ratio of 10:1. Then, this mixture was milled with zirconia balls and poly (tetrafluoroethylene) vials. Finally, graphene powder was dispersed with the mixture along with ethanol and DI water. Finally, polyimide templates were cleaned with DI water and used as substrates for the reactive ion etching process. Some of the parameters of this ion etching process where 100 W, 80 sccm and 10 Pa for power, gas flow and gas pressure, respectively. Then, the printing of interdigital electrodes was done using silver and subsequently dried at 120 °C for ten minutes. The thickness of the graphene nano-sheet was fixed at 10 μ with a printing number of 20. The developed MSCs had high energy and power densities of 1.41 mWh/cm3 at 25 mW/cm3 and 0.35 mWh/cm3 at 300 mW/cm3 , respectively. The application of these sensors was to drive a liquid crystal display via the connection of two serial and parallel supercapacitors. The loopholes related
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to this work can be linked to the processing materials used for developing these prototypes. Even though crumpled graphene offers the highest surface area [102], the production parameters have still not been optimized. The second disadvantage would be the agglomeration of the crumpled graphene caused due to the sintering effect [103]. This causes a change in the color of the crumpled graphene as a result of the partial restoration of the π network. The development and implementation of LC sensors were also done using gravure printing technology [104]. The work is related to the fabrication of a sensing system consisting of an inductor, detection coil and interdigitated electrodes using PET and silver ink as substrates and conductive ink, respectively. A conjugation of screen and gravure printing technologies were used to form the sensors. In gravure printing, the components were cylinder, ink fountain, doctor blade and impression cylinder. The impression cylinder assisted in the transfer of ink from the cells onto the substrate. The sensors consisted of 8 pairs of electrode lines, each one having a length and width of 8600 μ and 200 μ, respectively. The interdigital distance was fixed at 200 μ. These sensors were used for the detection of toxic heavy metals at low concentrations. The wireless operation was carried out to test the formed sensors for two metals of cadmium sulfide and lead sulfide. The sensors obtained high sensitivity with resonant frequencies obtained at 1.2, 2.5, 16.2 and 40 kHz. The drawbacks of this work can be related to the conductive silver epoxy that was used for connecting wires in the LC circuit. There is a high probability inconsistency as a result of formation air bubbles from batch to batch, which can eventually vary the resistivity of the connections. Wang et al. [105] explain the fabrication and characterization of MSCs using a stamp-assisted gravure printing technique. The printing process was carried out on conductive polymer composites to form the sensors. The composites were developed using CNTs and PDMS, which were subsequently used as printing inks. Optimization was done on the values of CNTs that were mixed with PDMS to form conductive inks on paper substrates. 300 mg of CNTs was initially mixed with toluene, followed by mixing into 3 gm of PDMS. Magnetic stirring was done at room temperature for 4 h to form a homogeneous mixture. This was followed by pouring the mixture on a dish in order to evaporate toluene. Finally, a cross-linker was added to the mixture with further magnetic stirring for 30 min. The viscosity of the nanocomposites was matched with that of the commercial ink by optimizing the amount of residual toluene. A thin-film layer of release agent was sprayed on the surface of the stamp base in order to increase the integrity of the gravure transferring. Then, the stamp was dipped into the CNTs-PDMS ink and subsequently used for printing the interdigital electrodes on the flexible substrates. Then, the ink got transferred onto the substrate after removing the groove. Finally, a gel consisting of polyvinyl alcohol and phosphoric acid was sprayed on the interdigital electrodes. The areal capacitance obtained for the MSCs was 10.491 μF/cm2 . One of the loopholes related to this work was the use of toluene for the proper dispersion of CNTs. The use of toluene for the dispersion of CNTs in composites has a high probability of partially destroying the nanotubes [106]. Secondly, the mixing of cross-linker with the pre-polymer after it was mixed with CNTs is detrimental for the proper linkage of the PDMS. When the CNTs are mixed
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with the pre-polymer, the silicone elastomers already get arbitrarily linked with the nanotubes, thus negating the effect of cross-linker. Pavinatto et al. [107] show the synthesis of gravure printed flexible sensors consisting of interdigitated ink-jetted electrodes. The sensors consisted of flexible plastic substrates which had interdigital electrodes made of gold nanoparticles on them. Tyrosinase (Tyr) was used as an active layer on top of the sensing area of the electrodes, while the entire biosensors were encapsulated with cellulose acetate. The Tyr ink that was finally formed using shear stress in gravure printing contained 1% w/v of trehalose, 0.05% v/v of Triton X-100, 6 mg/mL of CMC and 68.5 of Tyr. This ink was printed on polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) substrates with the gravure printing method. Two of the laser parameters, namely the printing speed and force of the gravure cylinder to compress the substrates, were optimized during the fabrication process. The sensors had an electrical conductivity of 5 × 106 S/m after they were sintered at 200 °C for 6 h. These prototypes were employed as biosensors, where the change in impedance was calculated with the corresponding change in the concentration of a model antioxidant. The sensors obtained sensitivity and limit of detection of 5.68 /μm and 200 μm, respectively. The issues with this work can be highlighted with the relation of the sintering process with the PET and PEN substrates. One of the major issues of polyethylene substrates is their high susceptibility with increased heat. Since the optimal temperature of these substrates should be kept close to room temperature, the quality of these substrates degraded in this case.
3.2.4
Ink-Jet Printing
The next type of printing technique that has been largely used for developing interdigital electrodes-based flexible sensors has been inkjet printing. Although the concept of this printing technique evolved in the 1950s, it is during the late 1990s [108, 109] when this method has been used extensively for research purposes. This method has been largely used in bioprinting sectors, where thin-film organic sensors and solar cells have been developed for industrial and environmental applications. One of the works related to inkjet-printing can be shown in [110], where interdigital capacitors were formed for monitoring of liquid levels. Two sensors were formed, namely level and reference sensors, using flexible PET substrates and silver ink nanoparticles. Each of the sensors had 9 fingers, whose length and interdigital distance was 135 mm and 1.5 mm, respectively. The fabricated prototypes were connected to an impedance analyzer for the experimental purpose of testing three different types of liquids. The frequency range was swept between 1 and 9 MHz to determine the changes in the capacitive values. Finally, the changes in the capacitance values took place due to the differences in the permittivity of the respective liquids. The issues with this work can be linked to both the devices and their operating mechanism. Firstly, the use of two sensors for experimental purposes increases the equipment cost. Secondly, the differences in the capacitive values of the chosen liquids do not change symmetrically, which states that optimization needs to done on the chosen frequency range.
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Another issue can be related to the compatibility of the PET substrates with the silver ink. PET substrates are normally compatible with solver, eco-solvent and UV inks [111]. The introduction of an additive dielectric interlayer in the interdigitated capacitive sensors was shown in [112]. Inkjet printing technique was employed to develop the sensors on flexible organic foils. A thin-film dielectric layer of Parylene C was formed on top of the electrodes prior to the second layer. This technique was employed to prevent the chances of short-circuits, which makes the devices non-functional. Before the silver ink was printed to form the first comb on flexible PET films, the substrates were treated with microwave oxygen plasma at a power of 400 W for 15 s. This step was performed to improve the wettability of the printed ink. Then, the organic residuals present in the ink of the electrode lines were removed using the sintering process for two hours at 150 °C. The deposition of Parylene C on the first electrodes comb was done using Chemical Vapor Deposition (CVD) technique. The thickness of the Parlyene C layer was around 2 μ. The sensors were validated by functionalizing them with an additive humidity sensing layer and subsequently determining the changes in their responses against corresponding changes in the relative humidity. The changes were determined in terms of capacitive values at a frequency and time interval of 100 kHz and 5 s, respectively. The loophole of this work can be attributed to the presence of two interdigitated electrode combs in separate layers. The characteristics of the generated electric field between the electrodes of opposite polarity would change due to the presence of the dielectric layer. Also, the consistency in the uniformity of the two printed layers might also vary depending on the uniformity of the dielectric layer and bottom PET substrate. Crowley et al. [113] show the fabrication and implementation of polyaniline (PANI)-based gas sensors for the detection of hydrogen sulfide at low concentrations. Flexible PET polymers were used as substrates where interdigitated electrodes were developed using printed layers of PANI and copper chloride. The sensors were used as chemiresistors where the change in current was determined corresponding to the change in the concentration of the target gas. The linear range and LOD of the sensors were 10–100 ppmv and 2.5 ppmv, respectively. Screen printing along inkjet printing was used as fabrication technology to form electrodes and prototypes. After the electrode designs were drawn using AutoCAD, commercial carbon paste and silver ink were used to form the electrodes. Optimization was done on the voltages of the piezoelectric nozzle prior to the printing process. The voltage range was set between 16 and 26 V before every round of printing. 16 nozzles having a space of 254 μ were used for developing printing purposes. The printing was done on PET substrates, followed by their heat treatment at 150 °C for 30 min. The copper chloride solutions were printed at a voltage of 16 V and a resolution of 40 μ. This was achieved by passing the solutions through the filter, having a spacing of 0.45 μ. The loopholes related to this work can be related to the experimental process followed to develop the sensors. The heat treatment of the printed inks creates a probability of increasing the surface cracks on the surface of the electrodes. Yi et al. [114] showed the use of inkjet printing technique for the development of carbon and silver-based strain sensors. The fabrication of fully printed strain sensors
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was done, which had the potential to be used as wearable sensors for structural health monitoring applications. Carbon and silver inks nanoparticles were employed to form the electrodes, whereas PI polymers were used to develop the substrates of the prototypes. The presence of carbon ink in the sensors assisted in increasing the resultant resistance of the sensors when they were bent to a certain degree. The printing of the silver ink was done using an inkjet printing technique on substrates having a thickness of 120 μ. After the formation of the designs, the samples were heated inside an oven at 100 °C for an hour, in order to dry the ink. The thickness of the formed electrodes was around 4 microns. Finally, the carbon ink was brushed on the electrodes and electrodes to form the additive layer, followed by drying the samples in the over at 100 °C for 30 min. The sensors had a size of 2.25 cm2 whose responses changed up to a maximum limit of 7.9% with a maximum bent in the sensors. The first loophole of this work is the presence of two layers, which form a capacitive layer between each other, and with the interdigitated electrodes. The second issue would be the irreversible cracks that are formed on the sensing surface due to the applied pressure. The presence of these cracks deters the quality of the prototypes, which considerably reduces their lifetime. Fang et al. [115] showed the fabrication of flexible interdigitated gas sensors using an inkjet printing technique. Silver nanoparticles were printed on flexible Kapton substrates. The deposited silver nanoparticles were converted to highly porous gold counterparts by using a mild and facile two-step process in ambient temperature. Initially, a layer of functionalized Single-Walled Carbon Nanotubes (SWCNTs) was uniformly deposited on the sensing surface using a novel layer-by-layer method. This was followed by printing the silver nanoparticles on top of the sensing elements. The silver particles were spherical in shape, having a diameter of 150 nm. Finally, the wet chemical reaction technique was used where tetrachloroauric acid (HAuCl4 ) was used for converting the silver nanoparticles into morphologically similar gold nanoparticles. The SWCNTs were present in a randomly and evenly distributed form between the interdigital electrodes. The sensors were operated as chemiresistors, where the Schottky contact between the porous gold electrodes and SWCNTs played a significant role in the responses of the sensors. The sensors showed high sensitivity towards the diethyl ethyl phosphonate (DEEP) gas, which is a stimulant for the nerve agent sarin. The responses of these sensors where around five times better than those performed with initially printed dense silver nanoparticles. The issues in this work can be questioned on the use of HAuCl4 for the conversion of silver particles. The probability of complete conversion of the silver particles is very low. In addition to this, the presence of functionalized SWCNTs below the converted silver particles deters their characteristics. Similar work can be seen in [116], where elucidation of the design and development of fully printed capacitive gas sensors were done, which were subsequently used for gas-sensing applications. The sensors were formed with silver electrodes on PET substrates. The characteristics of the prototypes were optimized using the sintering method, in addition to the electroplated passivation layers of Ni and Parylene-C. The width and interdigital distance of the electrode fingers were 95 ± 3 μ and 105 ± 3 μ, respectively. A capacitive value of 5 pF was targeted. A drop-on-demand
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printing technique was used to form the electrodes. The stability was improved by optimizing the sensor prototypes under high vacuum conditions. During the addition of the passivation layer, the monomers were used to coat the entire prototypes. This was done by cross-linking the polymers. The developed prototypes were used in experimental conditions having a maximum limit of 70% relative humidity. The operation of the sensors at higher relative humidity made the gaseous reactions irreversible. The output of the sensors was measured in terms of change in capacitance and conductance. The issue with this work can be related to the mechanism that needs to be followed to increase the operating range of relative humidity levels. In order to make the responses of the sensors reversible, the experiments need to be carried out at a wider range of temperatures. The increase in temperature values above the ambient level reduces their potential to be operated in dynamic conditions. Rosati et al. [117] showcased the development of interdigitated biosensors for the study of detection of contamination of bacteriophage in milk products. Silver nanoparticles-based inks were used for forming interdigital electrodes on a range of flexible substrates such as PET, office and photo papers. Black and silver-colored nanoparticles were used for fabrication on transparent PET substrates. The designs of the electrodes were developed using AutoCAD software. Optimization was done on the conductivity and ratio between the real and nominal printed lines. The dimensions of the interdigital electrode fingers were also optimized with different values of electrode widths and the width of the passivation windows. The passivation layer was formed by patterning vinyl adhesive patches with RoboMaster CraftRobo CC330. The prototypes were used for monitoring bacterial cultures via the EIS technique. Phosphate buffered saline was used as the buffer solution. The frequency sweep was done between 100 and 1 MHz, along with the input DC bias and AC voltages of 0 V and 5 mV, respectively. The changes in capacitance and impedance values were studied with the help of a standard buffer solution to test Lactococcus lactis and bacteriophage infection. The loopholes related to this work can be focused on the material that was used as a passivation layer on the electrodes. The presence of tapes not only deters the stability of the responses of the prototypes but also increases the probability of damaging the shape and design of the electrode fingers.
4 Possible Resolutions to the Existing Challenges Although a lot of work has been done on the fabrication of interdigital-based sensors, there are still some issues, as mentioned above, that needs to be addressed. Each of the mentioned research has been based on the preliminary work done on the design, development and utilization of interdigitated sensors for different kinds of biomedical, industrial and environmental applications. Some of the advantages of these sensors include their single-side access, the formation of low-cost devices, equipment with faster ionic diffusion in case of electrochemical reactions, high power density and adjustable signal strength. For the issues that are pointed out in the preceding section, there are some possible remedies that can be carried out to improve the
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quality of the prototypes. Firstly, the interdigital electrodes that were developed using printing techniques, compatible substrates should be selected that can withstand a high range of temperatures. It is better to print the nanoparticles-based electrodes on substrates that do not degrade its quality with a rise in temperature. A few of the options are PDMS and Polyimide, which can be considered for printed sensors. Secondly, the presence of an additional protective layer on top of the electrodes changes the overall permittivity of the sensors. This negates the characteristics of the conductive material that is used to form the electrodes. Instead of using an additive layer, nanocomposites can be formed by mixing all the elements, which can be subsequently used to form the electrodes. Also, the formation of nanocomposites in certain cases like graphene and CNTs where their dispersion does not happen homogenously in aqueous media without the assistance of any surfactants, functionalized carbon allotropes are a better alternative than can be considered instead of pure elements. For example, instead of using MWCNTs, functionalized CNTs can be employed for forming nanocomposites due to certain advantages. Some of them are better interfacial bonding within the polymer matrix, biocompatibility, solubility, cellular interaction pathways and reduced cytotoxic effects [118]. Another issue to be rectified is the formation of a thin oxidative layer in the environment on top of some of the electrodes. There are two possible ways to deal with this problem. Firstly, the use of certain metallic and carbon-based elements should be done to form the electrodes. For example, among the nanomaterials, gold nanoparticles can be considered due to their high stability in the environment. Among the carbon-based materials, graphene and CNTs are favorable choices due to the low bandgap. One of the ways of dealing with the cracks that happen in the strain sensors due to constant bending is the use of nanofillers with the electrodes. The presence of additional nanofillers, along with the conductive material in the electrodes, can reconstruct their interconnections to maintain the overall integrity of the prototypes. Certain subsidiary nanomaterials can form a covalent bond with the primary conductive material and polymer matrix to form composites that can completely heal itself, even after repetitive tests. This would also help in maintaining the consistency of the responses of the sensors. In order to deal with the drawbacks of the interdigitated electrodes, one of the possible opportunities is the use of certain non-finger-based ones, such as fractal shapes. The advantages of these types of electrodes have higher surface area that generates larger electric fields and higher energy density in comparison to interdigital electrodes. These types of electrodes have been used a lot to form biosensors [119, 120] and RF-based antennas [121, 122]. These types of electrodes have been largely developed using conventional MEMS techniques and having a working mechanism similar to parallel-plate capacitors. The operational capability in terms of frequency is also high as the antennas developed in these forms operation at frequencies as high as 10 GHz [123]. Resonating frequencies above 40 GHz have also been obtained [124] with these types of sensing prototypes that have been used as variable capacitors. The sensors have been formed with the backbone concept, which consists of a movable plate to obtain a specific fractal geometric shape. High-quality factors have also been obtained with the RF-based fractal sensors. One of the biggest
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advantages of these designs is the elimination of parasitic capacitance, which helps in precise measurements. Researchers are constantly working on the modeling and fabrication of sensors based on these designs to increase the tuning range of the variable capacitors [125]. These sensors have high potential for other applications like energy harvesting [126] using a variety of fabrication techniques like 3D printing and screen printing. These sensors have been embedded with signal-conditioning circuits to operate them as IoT devices for harvesting energy from ambient sources. Real-time testing has been done with these devices where up to 500 mV have been harvested. The utilization of interdigital designs in conjugation with fractal shapes will be another intriguing sector that can be worked upon to improve the quality of the sensors in microelectronics industries.
5 Conclusion This chapter explains some of the significant work done on the design, fabrication and implementation of interdigital-based sensors. These sensors have been formed using different kinds of MEMS and printing techniques, which altered the structure and dimension of the prototypes. The variation in the nature of the prototypes in terms of structure, size and shape, resulted in their use in different sectors. Some of the issues related to each of the above-mentioned works have been presented, along with possible remedies in the preceding section. Although the use of these designs has been done for quite some time, there are still some opportunities that can be harnessed in the future for further improvement. These electrode designs can be formed using nanomaterials [127, 128] to have enhanced electrochemical characteristics and high longevity. The rectifications of the existing issues, along with their further improvement, can increase the usage of interdigital designs for developing ubiquitous sensors to a great extent.
References 1. S. C. Mukhopadhyay, A. Lay-Ekuakille, A. Fuchs, New Developments and Applications in Sensing Technology (Springer, 2011) 2. S.C. Mukhopadhyay, Interfacing of Sensors and Signal Conditioning, in Intelligent Sensing (Springer, Instrumentation and Measurements, 2013), pp. 29–53 3. M. Kraft, N. M. White, MEMS for Automotive and Aerospace Applications (Elsevier, 2013) 4. M. Esashi, Revolution of sensors in micro-electromechanical systems. Jpn. J. Appl. Phys. 51(8R), 080001 (2012) 5. J.C. Costa, F. Spina, P. Lugoda, L. Garcia-Garcia, D. Roggen, N. Münzenrieder, Flexible sensors—from materials to applications. Technologies 7(2), 35 (2019) 6. A.C.R. Grayson et al., A BioMEMS review: MEMS technology for physiologically integrated devices. Proc. IEEE 92(1), 6–21 (2004) 7. Y.-H. Wang et al., MEMS-based gas flow sensors. Microfluid. Nanofluid. 6(3), 333 (2009)
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Design and Fabrication of Fringing Field Interdigital Sensors for Physical Parameters Measurement Tarikul Islam
Abstract Fringing electric field, a notorious edging effect of a parallel plate capacitor causes error in the measurement of capacitance value of the capacitor. It requires a guard electrode to minimize the error due to the fringing field. However, today fringing field interdigital electrodes (IDT) capacitive sensors are playing an important role in the measurement of different types of physical and chemical parameters. The important advantages of the sensors are simple inexpensive fabrication, single side testing of the materials and suitability of nondestructive measurement. These sensors are widely used for different physical parameters measurement including humidity, soil moisture, corn/grain moisture, moisture in paper pulp, leather etc. With the passage of time, it is expected to explore many new wonderful applications of this IDT sensor in near future. In this chapter, design of fringing IDT capacitive sensor with the help of analytical expression to optimize the geometrical parameters for maximum field penetration depth is discussed. Two IDT sensors of different geometrical configurations are designed and fabricated to measure physical parameters such as humidity and liquid level.
1 Introduction Interdigital electrodes fringing field sensors are extensively used for different sensing applications including moisture measurement in agricultural food products, soil [1, 2], detection of microdroplets [3, 4], water intrusion in composite structures [5], moisture measurement in printed circuit board [6], humidity measurement [7], rapid detection of phthalates in water and beverages [8], measurement of liquid level [9], C-terminal telopeptide of type-I collagen (CTX-I) detection [10], in smart agriculture for phosphate and nitrate monitoring [11, 12], low force sensing [13], flexible printed pressure sensing for robotic arm [14], for biomedical applications [15]. These IDT T. Islam (B) Department of Electrical Engineering, Jamia Millia Islamia (Central University), New Delhi 110025, India e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_4
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sensors can be used for the destructive (invasive) and non-destructive measurement of samples. Invasive sensors when the test samples are in touch with samples suffer from electrode contamination/oxidation, contamination of samples, possibility of irreversible reaction and have short life time. However, the non-destructive sensors where the sample is not in touch with the sensors do not suffer from these disadvantages of the destructive sensor. In a normal parallel plate capacitor, the test medium should be placed within the electrodes and the fringing electric field causes error in the capacitance value. However, this fringing electric field is used in an IDT sensor, where the medium can be tested from a single side by passing the electric field through the sample under test (SUT). Although the IDT capacitive sensors look like a parallel plate capacitor and many times, the capacitance value is represented by the same expression like C = ε0 εr At but this is not truly the correct expression [16]. However, for coplanar fringing IDT capacitors, the capacitance value is represented by complex mathematical expressions. Purpose of this chapter is to highlight some design aspects of different configurations of the IDT sensors and to discuss some applications of the IDT sensors for physical parameters measurement [3, 17]. Two different IDT configurations such as (i) 1-1-1 configuration (equally spaced working and sensing electrodes) (ii) 1-n-1 configuration (n number of sensing electrodes between two working electrodes) are studied [18].
2 Fringing Field Interdigital Electrode Sensor A. IDT Sensor with Equal Number of Working and Sensing Electrodes Figure 1a shows the coplanar interdigital configuration of a sensor structure which can be used to test the sample. Here the coplanar and semi-infinite metal fingers separated by uniform gaps are placed within a dielectric medium of permittivity 1r . It has an equal number of sensing and working electrodes. The test medium can directly be in touch with the sensor in case of destructive sensing or there will be an insulating barrier in between the test sample and the sensor for non-destructive sensing. The IDT has N number of fingers where the fingers in working electrodes (WE) and sensing electrodes (SE) are equally spaced. The gap between the electrodes is 2 g and the length of the finger is l, the width of the electrode is w and the wavelength is λ (length between two fingers on same side of the IDT). The height of the SUT is T. The electrodes are excited by electric potential ±V. Due to this electric potential, the electric field lines go from the positive electrodes to the negative electrodes penetrating the dielectric SUT. The maximum height of the electric field is h. Here, the width of the electrode is much higher than the gap between the electrodes (W > > 2 g). Expanded view of two coplanar semi-infinite parallel plate electrodes separated by gap 2 g is shown in Fig. 1b. Two-dimensional electrode field distribution shown in Fig. 1b can be conveniently solved using conformal mapping technique with the help of inverse-cosine transform [3, 19]. The results of solution of conformal mapping can be used to find an approximate expression of capacitance [20].
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Fingers
Wavelength
Bus bar for SE
l Finger length
AC
Bus bar for WE T>h
c=0 +V/2 -V/2 h c = +V
SUT
T H f The field penetration height Hf can be determined from the solution of (4) at x = 0 and the solution of (2) at x = g + w. At x = 0, using (4), the field penetration depth Hf corresponding to the maximum vertical displacement of field line emanating from the outermost edge of the electrode pair is given by
πd H f = g sinh 2V0 and at x = g + w, c = + V0 , g + w = g cosh
π d 2V0
Equation (12) can be written as
(13) π d 2V0
, then
w 1+ = cosh g −1
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w w 2 −1 =g 1+ 1+ H f = g sinh cosh −1 g g
(14)
Case 2: When the SUT height T < H f . The capacitance value can be determined by those electric field lines emanating from a portion of the electrode width represented by wa in Fig 1d. At x = 0, the field height H f is given by.
π d H f = g sinh 2V0
And at x = g + wa , c = V0 , then g + wa = g cosh
(15a)
π d 2v0
(15b)
Equation (15a, 15b) can be written as H Hf 2 wa f + 1 = cosh sinh −1 = 1+ g g g
(16)
H The value of ratio Tf serves important purpose to obtain detectable sensitivity. H H If this ratio Tf 1 or Tf 1, the capacitance value is greatly reduced. In the former case, the sample height (large sample) is so larger than the maximum field height, the field penetration through the sample is small. In the latter case, the liquid sample is very small. For maximum capacitance value and better signal to noise ratio, Hf should be comparable to the electrode width w. Then the capacitance value for Hf (=w) for N number of fingers can be ⎡ ⎤ Hf 2 Hf ⎦ εr ε0 l(N − 1) ⎣ 1+ ln Cm = + π g g
(17)
This relation shows that for maximum capacitance, the gap between the electrodes will be minimum and the width of the electrode should be close to the height (breadth of the container) of the sample under test. The effectiveness of the expression is validated by simulation results for different values of w/g. There is a close agreement between the simulation and the analytical results. For w/a = 1000, the simulation result deviates from the analytical value by only 0.2% [3].
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3 Interdigital Capacitive Sensor for Humidity Measurement Humidity measurement using thin film sensors have gained increasing demand over the past decade for a wide range of applications in many automated industrial processes, food quality monitoring, air conditioning systems, meteorology, textile industry, smart irrigation and farming and so on. Humidity sensors also find their use in the medical field, pharmaceutical processing, rear-window defoggers in automobile industries, and health monitoring of electrical equipment. The quality of the finished products from many industrial processes prominently depends on the humidity of the surroundings. Due to advances in nanotechnology, the humidity sensors are also getting smaller in size, cheaper, and of better performance. The dynamic range of humidity measurement is wide. Various transduction principles are used in humidity sensors, such as optical, gravimetric, resistive and capacitive [21]. The capacitive humidity sensors are extensively used, owing to small size, temperature stability, easy adsorption and desorption, small power consumption, and relatively low cost. On exposing the capacitive humidity sensor to ambient humidity, the effective dielectric constant of the sensing layer changes, accordingly, the capacitance value changes. The essential requirements for the humidity sensor are resolution in case of low ppm detection, stability, fast response, high sensitivity, negligible drift due to ageing, wide range and low cost [7, 22]. Porous forms of oxides are some finest materials for humidity measurement, it offers ample space for water vapour condensation and suitable pore morphology which leads to high sensitivity to the water vapour molecules. This nanostructure film offers a large surface-to-volume ratio, and the availability of a large number of voids. The oxide porous layer can be formed by anodic oxidation, sputtering, spray pyrolysis, chemical vapour deposition, and sol– gel technique etc. The sol–gel method provides a simple and low-cost way for the fabrication of highly pure porous Al2 O3 thin film humidity sensors. The film is very hydrophilic to water molecules but not soluble in water, and is thermally and chemically very stable [7]. Most of the capacitive humidity sensors utilize the simple parallel plate or interdigitated design. The yield ratio of the parallel plate capacitive humidity sensors in case of hyper thin film is low due to shorting of the electrodes. But the interdigital fringing field type capacitive sensor there is no shorting problem, and the humidity can be measured by single side sensing film. The capacitive structure shown in Fig. 1 which has an equal number of working and sensing electrodes can be used to measure humidity. Working and sensing electrodes are separated by identical gaps which are smaller than the width of the finger. To enhance sensitivity towards humidity, a hydrophilic film made of porous metal oxide/polymer can be deposited on the IDT electrodes. Figure 2a shows the schematic diagram of the 1-1-1 structure capacitive humidity sensor. The sensor can be made on an inert substrate which may be made of the alumina substrate (alpha)/silicon, glass etc. In the present case, an alumina substrate
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Hydrophilic alumina film Inert platform
Interdigital electrode
(a)
(b)
Fig. 2 a Schematic of the sol–gel thin film capacitive relative humidity sensor, b photograph [7]
of size 85 mm × 19 mm × 0.65 mm was used. The IDT electrode of the sensor was fabricated by manual screen-printing technique. Prior to the fabrication of the IDT electrode, a mask was made using AutoCAD software. The electrodes were made of gold of size 70 mm × 16 mm. The gap between the two fingers of the interdigital electrode was 0.3 mm and the width of each finger was 0.5 mm. The electrode was sintered at 900 ºC for 1 h. A sol solution of aluminum hydroxide (AlO(OH)) was prepared by Yoldas method using aluminum sec butoxide precursor [23]. Then a thin film of γ-Al2 O3 of thickness ~6 μm was deposited on the IDT electrode from the sol solution by dip coating instrument. The film was initially heated at low temperature of nearly 80 ºC for 5 m and then sintered at 450 °C for 3 h to make the stable Al2 O3 thin film on the electrode. To maintain the uniformity of the sensing film without cracking, the heating rate of the film was kept very small ~10 ºC/h. Figure 2b is the photograph of the sensor. Pore morphology of the film was studied by BET surface area analyzer. The effective surface area of the film was around 200 m2 /gm. The average size of the pores was around 10 nm and the distribution of the pores in the film was in the range of ~1 to 30 nm [24]. To determine the response characteristics, the schematic experimental setup shown in Fig. 3 was used. The sensor was placed in a 100 cc sealed and properly grounded metallic chamber. The humidity in the sensor chamber varied from 0%RH to 90%RH by mixing water vapour to dry N2 gas using control valves. The sensor chamber was connected in series with the commercial RH meter (2D/RH-100C) to measure the humidity exposed to the sensor. It is a relative humidity cum ambient temperature indicator. The meter is made of Honeywell polymer capacitive humidity sensor. The meter has humidity measurement range of 0–100%RH with an accuracy of ±2%RH and temperature range of 0–100 °C, with a resolution of 0.1 °C and an accuracy of ± 0.5 °C. Experiment was conducted to measure the capacitive response of the sensor with variation of humidity at two frequencies. Results of capacitance variation at 5
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Fig. 3 Schematic of the experimental set up to determine the response of the IDT humidity sensor [7]
and 10 kHz are shown in Fig. 4a. It is observed that the capacitance value increases with increase in humidity at both frequencies, but the capacitance change at low frequency is significantly very high than the capacitance changes at 10 kHz. It has been observed that the capacitance value decreases with increase in frequency. However, the nonlinearity of the sensor output decreases with increase in frequency. Figure 4b shows the variation of percentage nonlinearity with increase in frequency. At low frequency, although sensitivity is high but nonlinearity is also high. Selecting suitable signal frequency which is of the order of few tens of kHz is important for the optimum performance of the sensor. Initially, water molecules are condensed on the surface and condensed in the pores through capillary condensation. Capillary condensation leads to the partial filling in the pores gradually. Therefore, the capacitance value increases due to gradual increase in dielectric constant of the sensor. It is seen in Eq. (17), that the capacitance value directly depends on the relative permittivity of the dielectric layer. When the water molecules are completely filled in the pores, there is no further increase in capacitance value. In addition to formation of dielectric capacitance due to condensation of water vapour, two more capacitances are formed at low frequency such as Stern layer capacitance and diffusion layer capacitance. These capacitances are formed when charges are accumulated at the electrode and water layer interface. Formation of these space charge layers thus results in the substantial increase in overall capacitance of the sensor but not the capacitance of the dielectric film. However, these Stern layer and diffusion capacitances are frequency dependent and decrease with increase in frequency till it reaches to a certain critical value [25]. In short, we can say that at low frequency, the capacitive response of the sensor has strong influence of double layer capacitance including the capacitance of the dielectric film which occurs due to water adsorption. The effective dielectric capacitance can be approximately given by Looyenga’s empirical equation as in (18).
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Fig. 4 a Variation of capacitance of the sensor with %RH at 5 and 10 kHz frequencies (Vac = 500 mV) [7]. b Variation of sensor nonlinearity with signal frequency
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3 + ε1/3 εr = γ εω1/3 − ε1/3 p p
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(18)
where εω is dielectric constant of water and γ is the volume fraction of water condensed in the film. However, the resistance value of the sensor also changes due to adsorption of water vapour molecules. The resistance Rp at any humidity (RH) can be approximately represented by another empirical relation of (19). log
Rp b = (loga − log)/ 1 + R0
(19)
where, R0 is the resistance value at dry condition. The factor, n is the correction factor, a, b are the constants depending on the composition of the film and its structure. The resistance change is due to change in electronic and ionic conductivity of the film when water molecules are adsorbed on the surface [24]. The IDT sensor is simple to work with humidity sensing at a high level. However, this is not suitable for measurement of moisture in ppm level in gaseous environment. However, some work using a micrometre digital IDT sensor is reported to measure ppm moisture in the range of 175–625 ppm but not below 100 ppm [22]. Exploring the possibility of moisture sensing in ppm level in transformer oil using the IDT sensor is a scope of further work.
4 The Fringing Electric Field Coplanar IDT Structure for Liquid Level Measurement Liquid level measurement is important for different industrial and home applications. Different techniques are used for level measurement including optical, ultrasonic, resistive and capacitive methods. The capacitive parallel plate/coaxial cylindrical are widely used for level measurement. However, most of them are contact types which require frequent maintenance, and the sensor output drifts with time because of contamination of electrodes with liquid samples. In this section, a simple noncontact interdigitated fringing field capacitance sensor for liquid level measurement is discussed. Two interdigital (IDT) sensors one having 1-3-1 coplanar electrodes and another one having 1-5-1 have been designed, simulated (finite element method) and then fabricated to measure water level from 0 to 30 mm. The capacitance value of both the sensors vary almost linearly with the variation of liquid level. In the previous section we have discussed how to optimize the geometrical parameters of the IDT sensor to maximize the capacitance value between the working and sensing electrode. Figure 5a shows the schematic diagram of the proposed structure which consists of two coplanar electrodes separated by a small gap attached on the wall of a liquid container. Both the WE and SE are shielded to minimize error due
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Sensing electrode
L Electric field
Metal shield Insulation
Container with SUT
t b Working electrode
(a)
(b)
Fig. 5 a Coplanar electrodes separated by gap (g) is attached on the wall of the plastic fibre container with liquid sample, b equivalent capacitance formation
to external influence. For noncontact measurement, the coplanar sensor should be attached on the outer wall of the container but for the destructive measurement, it can be placed on the inner wall. The container is made of plastic fibre or Teflon. This structure can be easily fabricated using double sided copper clad FR4 substrate by electrochemical etching of undesired metal parts. Figure 5b shows the schematic view of pure dielectric liquid level measurement. The part of the electric field passes through the liquid sample and part of the field passes through the air. It is assumed that there is no air gap between the electrodes and the wall of the container. So, two capacitances are formed (i) the capacitance due to liquid level (Cl ) and (ii) the capacitance due to air (Ca ). The capacitance value is given by C T = Cl + C a ,
(20)
where Cl ∝ H × ∈0 ∈l and Ca ∝ (L − H )εa . L is the maximum measurable height of the liquid column (electrode), H is the actual liquid height, 1l is the dielectric constant of liquid and 1a is the dielectric constant of air. If the coplanar structure consists of two fingers as shown in Fig. 1, and the field penetration depth is close to the width of the liquid sample (b), then single capacitance between positive (WE) and negative electrode (SE) is given by (17). This is to note that if the electrodes are placed on the outer wall of the container, additional capacitance will be formed due to the dielectric constant of the container.
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This capacitance value depends on the dielectric constant and thickness of the container. This capacitance will be in series with the capacitance CT , so efforts will be made to keep its capacitance high in comparison to the capacitance value of CT . This can be ensured by taking a container with a thin wall. The coplanar structure with metal guard on the opposite side can be represented by an equivalent circuit shown in Fig. 6. Here, the coplanar structure is made on coplanar cladded FR4 substrate. The IDT can be made on one side of the substrate and the opposite is the metal shield. The coplanar electrodes are exposed to the SUT. When the WE is excited by the electric potential, the electric field penetrates through the sample to the working electrode. If the metal shield is connected to the WE, the field will be directed to the sensing electrode only. The SUT can be approximately represented by an impedance having parallel form of capacitance and resistance. For pure dielectric samples, the impedance is predominantly capacitive. If the metal shield is grounded, then unwanted offset impedances shown in Fig. 6 will be formed at both the WE and SE. This is due to some electric field also penetrating to the back side grounded electrode. If the SE is connected to the inverting input of the Opamp, the offset impedance at the SE will be nullified due to virtual ground potential of the inverting input. The offset impedance at the working electrode is across the input excitation. If the excitation has low input impedance, then offset impedance has negligible effect on the output of the Opamp [26, 27]. If the sensor structure is IDT with N number of fingers with 1-1-1 structure and used for liquid level measurement, the capacitance value can be increased by (N − 1) times of the capacitance having only two coplanar electrodes as shown in Fig. 5a.
Electric Field
Reff SUT
g
W Vs AC
Rf
Ceff
Working electrode
Rwg
Cwg
S
Rsg FR4 substrate
LF-351
Csg Guard electrode
Vg
Fig. 6 Equivalent circuit of the coplanar structure with metal shield
Sensing electrode
V0
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Fig. 7 The schematic diagram of the 1-3-1 IDT sensor for liquid level measurement
+
-
-
-
+
L C23 C13 H
C12 C11
C22 C21
A. Fringing field Interdigital electrode with unequal working and sending electrodes Figure 7 shows the schematic diagram of the 1-3-1 IDT structure placed on the outer wall of a plastic container. It has three sensing electrodes (SE) between two working electrodes (WE). When the working electrode is connected to the high potential ac excitation with respect to sensing electrodes, the sensor forms different parallel plate capacitors as shown in the diagram. The fringing electric field is generated from the WE and goes to the SE. The field penetration and the capacitance formation depend on the geometrical configuration of the sensor, the sensing film deposited on the electrode and the strength of the excitation. Since, the geometrical configuration and ac signal do not vary, so the effective capacitance will vary due to the variation of the liquid level [27]. In Fig. 7, the capacitors between WE and SE are connected in parallel. Therefore, the capacitance is function of distance between positive electrode (WE) and negative electrode (SE). C12 =
1 1 C11 : − − − − − − − − − − − − .C1n = C11 2 n
(21)
1 1 C21 : − − − − − − − − − − − − −.C2n = C21 2 n
(22)
and C22 =
where, C11 = C21 : C11 is the capacitance between the positive electrode and closest negative electrode. Therefore, the total equivalent capacitance Ceq for each sensor’s geometry is given by;
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Ceq1 = C11 + C12 + . . . . . . .. + C1n
(23)
Ceq2 = C21 + C22 + . . . . . . . + C2n
(24)
where, Ceq1 is for equivalent capacitance in the first geometry of each sensor while (C2n ) is the equivalent capacitance in the second geometry of each sensor. Since, there may be several working electrodes, total capacitance within sensor geometry is given by; Ctotal = Ceq1 + Ceq2 + . . . . . . ..Ceqn
(25)
B Design and simulation The diagram of the interdigitated electrode structure shown in Fig. 7 was designed using finite element software. The simulation study was done using finite element software ANSYS Maxwell 15.0 and its electrostatic solver. The structure 1-5-1, had five sensing electrodes (fingers) between two working electrodes. The maximum length sensor was 35 mm. The width of each finger was 2 mm and the thickness was 25 μm. The gap between two fingers was 1 mm. The structure was made using FR4 double sided copper clad substrate. The IDT sensor was placed on the outside wall of the acrylic container of 1.5 mm thickness. RO water was considered as a liquid sample for level measurement. Its conductivity was 0.01 siemens. Automatic adaptive mesh refinement technique with triangular mesh grid was used for modelling the structure for better accuracy. The potential difference between the WE and SE was 6.6 V. Figure 8 shows the electric field distribution with and without water in the Vessel. Figure 9 shows the variation of capacitance value with RO water level obtained through simulation results using 1-5-1 sensor. The capacitance values for this sensor increases almost linearly with increase in water level. Similarly, the capacitance value of 1-3-1 sensors increases with increase in water level. The sensors 1-3-1 and 1-5-1 have different slopes and also the initial offset capacitance values are different due to different electrode structure. The sensor 1-5-1 has better sensitivity than the 1-3-1 sensor. Simulation results clearly show that the structure can be useful to measure liquid level noninvasively with almost linear response. The average sensitivity of the level measurement of the 1-5-1 IDT sensor through simulation was 30 fF/mm. C. Fabrication of the 1-3-1 and 1-5-1 IDT structures The sensors were fabricated using double sided copper FR4 substrate (Roger) and copper etchant solutions. So, the sensor can be fabricated at low cost in bulk. The interdigitated sensor structure was designed by Auto CAD software. The IDT patterns of 1-3-1 and 1-5-1 were printed using an inkjet printer on the photo paper. The print was then transferred to the copper layer of the PCB using thermal heating press. The exposed part of the copper was then etched out with copper etching solution. The
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Fig. 8 Electrical field distribution of the sensor in the acrylic tank a with water level b, without water [27]
Fig. 9 Change in capacitance values with water level for 1-5-1 sensor
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Fig. 10 Fabricated IDT sensors a1-3-1 b 1-5-1 [27]
substrates were then cleaned thoroughly using acetone, ethyl alcohol and distilled water. The sensors were then dried. Figure 10 shows the photographs of the sensors. D. Experimental methods and results The capacitance value of the sensor was measured by the capacitance to digital converter evaluation board (FDC1004, Texas Instrument). This board was procured by Texas Instruments. The board can be interfaced to the PC using I2 C interfacing to measure the capacitance value digitally. The CDC board has resolution of 0.5 fF, the capacitance range of 0–400 pF. It operates with supply voltage 3.3 V and has operating temperature range of −40–125 °C. The board has the provision of active guarding. The IDT sensor was then pasted on the outer wall of a plastic container, the IDT pattern on the inner side and the copper metal shield on the outer side. The sensor was connected to the board with the help of shielded cable. The photograph of the set up for conducting the experiment is shown in Fig. 11. On another side of the container calibrated scale was fixed to measure the length of the water. The experiment was conducted with the variation of water level in the range of 0–25 mm. Water was poured into the vessel up to a certain height with level marked, the water was allowed to settle for some time to reduce the fluctuation of its level. The capacitance was then measured. Several capacitance values were measured at the same height, the average of the capacitances obtained at that level was noted. Experiments were then repeated for other levels in the range of 0–25 mm. The variation of the capacitance value of 15-1 sensor with water level is shown in Fig. 12. The capacitance value increases with increase in water level almost linearly. The sensitivity of the output response is ~40 fF/mm, and the resolution of the water level is ~0.1 mm. Similarly, the experiment was conducted with the 1-3-1 IDT sensor. Results are shown in Fig. 12. Experimental capacitance values of each sensor are linearly fitted. Experimental results show that the capacitance values of both the sensors increase almost linearly with increase in liquid level. However, the capacitance change for the 1-5-1 sensor is maximum. Some mismatch of the reading of the experimental results from simulation may be due to difference in the dielectric property of the water which was selected for simulation and experiential work. There may be some error due to the lead capacitance effect of the sensors which can be minimized by active guarding.
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Fig. 11 Test setup for non-contact water level measurement [27]
Fig. 12 Variation of the capacitance value with change in water level
5 Conclusions In this chapter, design of the interdigital capacitive sensors for single side testing of test medium is discussed. Two different IDT structures are studied (i) one having 1-11 electrode structure and (ii) the other one is having 1-n-1 structure, where n is number of sensing electrodes between two working electrodes. The attractive features of the IDT sensors are simple fabrication, and suitability for non-destructive measurement
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of physical or chemical parameters. However, finding the exact expression of capacitance value is difficult. Although the expression of parallel plate capacitor is used for the determination of the capacitance value of the IDT sensor, it is too simple to match the experimental results. Effort is made to find the expression of capacitance using conformal mapping technique. Two applications of physical parameters measurement of the IDT sensors are investigated in detail. Numerus applications of this sensor for pure and lossy dielectric are possible. The capacitive sensor needs extra precautions to avoid the errors due to stray effects, particularly for the low capacitance measurement. The sensor should be properly guarded to avoid the influence of external capacitance.
References 1. R.B. McIntosh, M.E. Casada, Fringing field capacitance sensor for measuring the moisture content of agricultural commodities. IEEE Sens. J. 8(3), 240–247 (2008) 2. J. Mizuguchi, J.C. Piai, J.A. de França, M.B. de MoraisFrança, K. Yamashita, L. Carlos Mathias, Fringing field capacitive sensor for measuring soil water content: design, manufacture, and testing. IEEE Trans. Instrum. Meas. 64(1), 212–219 (2014) 3. J.Z. Chen, A.A. Darhuber, S.M. Troain, S Wagnern, Lab on Chip, vol. 4 (2004), pp. 473–480 4. C. Elbuken, T. Glawdel, D. Chan, C.L. Ren, Detection of microdroplet size and speed using capacitive sensors. Sens. Actuators A: Phys. 171, 55–62 (2011) 5. A.A. Nassr, W.H. Ahmed, W.W. El-Dakhakhni, Coplanar capacitance sensors for detecting water intrusion in composite structures. Meas. Sci. Technol. 19, 075702–075709 (2008) 6. R.N. Dean, A.K. Rane, M.E. Baginski, J. Richard, Z. Hartzog, D. Elton, A capacitive fringing field sensor design for moisture measurement based on printed circuit board technology. IEEE Trans. Instrum. Meas. 61(4), 1105–1112 (2012) 7. T. Islam, M.Z. Rahman, Investigation of the electrical characteristics on measurement frequency of a thin-film ceramic humidity sensor. IEEE Trans. Instrum. Meas 65(3), 694–702 (2016) 8. A.I. Zia, M.S.A. Rahman, S.C. Mukhopadhyay el al., Technique for rapid detection of phthalates in water and beverages. J. Food Eng. 116, 515–523 (2013) 9. K. Chetpattananondh, T. Tapoanoi, P. Phukpattaranont, N. Jindapetch, A self-calibration water level measurement using an interdigital capacitive sensor. Sens. Actuators, A 209, 175–182 (2014) 10. N. Afsarimanesh, S.C. Mukhopadhyay, M. Kruger, Performance assessment of interdigital sensor for varied coating thicknesses to detect CTX-I. IEEE Sens. J. 18(10), 3524–3531 (2018) 11. A. Nag, M.E.EAlahi., S. Feng, S.C. Mukhopadhyay, IoT-based sensing system for phosphate detection using Graphite/PDMS sensors. Sens. Actuators A: Phys. 286, 43–50 (2019) 12. Md.E. Alahi, N.P. Ishak, S.C. Mukhopadhyay, L. Burkitt, An internet-of-things enabled smart sensing system for nitrate monitoring, IEEE Int. Things J. 5(6), 4409–4417 (2018). S. Nag, S. Feng, C. Mukhopadhyay, J. Kosel, D. Inglis, 3-D printed mould-based Graphite/PDMS sensor for low force applications. Sens. Actuators A: Phys. 280, 525–534 (2018) 13. M.B. Nag, S.C. Mukhopadhyay, Performance analysis of flexible printed sensors for robotic arm applications. Sens. Actuators A: Phys. 276, 226–236 (2018) 14. A. Nag, N. Afsarimanesh, S.C. Mukhopadhyay, Impedimetric microsensors for biomedical applications. Curr. Opin. Biomed. Eng. 9, 1–7 (2019) 15. R. MohdSyaifudin, S.C. Mukhopadhyay, P.L. Yu, Modelling and fabrication of optimum structure of novel interdigital sensors for food inspection. Numer. Model.: Electr. Netw. Dev. Fields 25(1), 64–81 (2012)
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16. T. Islam, S.C. Mukhopadhyay, N.K. Suryadevara, Smart sensors and internet of things: a postgraduate paper. IEEE Sens. J. 17(3), 577–588 (IF:2.512) (2017) 17. R. Igreja, C.J. Dias, Analytical evaluation of the interdigital electrodes capacitance for a multilayered structure. Sens. Actuators A: Phys. 112(2–3), 291–301 (2004) 18. X.B. Li, S.D. Larson, A.S. Zyuzin, A.V. Mamishev, Design principles for multichannel fringing electric field sensors. IEEE Sen. J. 6(2), 434–440 (2006) 19. S. Ramo, J.R. Whinnery, T. Van Duzer, Fields and Waves in Communication Electronics (J. Wiley & Sons, New York, 1994). 20. Z.M. Rittersma, Recent achievements in miniaturised humidity sensors—a review of transduction techniques. Sens. Actuators, A 96, 196–210 (2002) 21. T.Islam,A.T. Nimal, U.Mittal, M.U. Sharma, A micro interdigitated thin film metal oxide capacitive sensor for measuring moisture in the range of 175–625 ppm. Sens. Actuators B: Chem. 221, 357–364 (2015) 22. E. Yoldas, Design of sol-gel coating media for ink-jet printing. J. Sol-Gel Sci. Technol. 13(1), 147–152 (1998) 23. Md.R. Mahboob, Z.H. Zargar, T. Islam, A sensitive and highly linear capacitive thin film sensor for trace moisture measurement in gases. Sens. Actuators B: Chem. 228, 658–664 (2016) 24. H. Wang, L. Pilon, Intrinsic limitations of impedance measurements in determining electric double layer capacitances. Electrochim. Acta 63, 55–63 (2012) 25. A.V. Mamishev, K.S. Rajan, F. Young, Y. Du, M Zahn. Proc. IEEE 92(5), 808–845 (2004) 26. T. Islam, S.C. Mukhopadhayay, Wearable sensors for physiological parameters measurement: physics, characteristics, design and applications, in Wearable Sensors: Applications, Design and Implementation, ed. by S.C. Mukhopadhyay, T. Islam (Institute of Physics (IOP), Publishing, Bristol, UK, 2017), pp. 1–31 27. T. Islam, O.P. Maurya, Design and fabrication of non-contact fringing field capacitive sensor for liquid level measurement, in 2019 IEEE 16th India Council International Conference (Marwadi University, Rajkot, IEEE Explore) 978–1–7281–2327–1/19/$31.00 ©2019 IEEE
Optimization of Interdigitated Sensor Characteristics J. Claudel, A. L. Alves de Araujo, D. Kourtiche, M. Nadi, and A. Bourjilat
Abstract Interdigitated sensors for bioimpedance analysis (BIA) are specially adapted for the characterization of low-volume (microliter scale) biological samples and the monitoring of a thin-film of biological cells for cell culture or cell settling and coagulation analysis. Impedance spectroscopy has the advantage of being a markerfree method (a combined impedance and marker is also possible), which considerably simplifies the preparation of samples. The geometry of the interdigitated sensor simultaneously represents microscopic sizes as the electrodes’ width, gap, and millimetric surface, making the sample deposition easier. The microscopic size of the electrodes induces an increase in double-layer effects, which can completely occult interesting bandwidth of the impedance measurements. This effect, therefore, must be considered early in the sensor optimization design. In this work, we propose a complete approach to optimize interdigitated sensors according to targeted applications. A complete analytical model is proposed and validated with a finite element method simulation using COMSOL Multiphysics software. The model examines the influence of all geometrical parameters, such as number of electrodes, width, gap, and substrate material. A detailed methodology is proposed to choose the best compromise between sensitivity and useful bandwidth. To validate the proposed methodology, measurements were performed on biological samples (yeast cells) using five sensors with different optimized geometries. Results demonstrated the validity of the proposed methodology and the possibility to extract all the intrinsic electrical parameters of the biological samples using both optimized sensors and our models.
J. Claudel · A. L. Alves de Araujo · D. Kourtiche · M. Nadi (B) · A. Bourjilat Institut Jean Lamour, Lorraine University (CNRS—UMR 7198), 54011 Nancy, France e-mail: [email protected] J. Claudel e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_5
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1 Introduction Since the invention of Clark’s electrode oxygen sensor (1956) [1], many improvements in the sensitivity, selectivity, and multiplexing of biosensors (Lab-on-chip) have emerged. Biosensors can be defined as a compact analytical device incorporating a biological detection element associated with a physicochemical transducer [2]. These methods are often based on charge transfer sensors, impedance-based sensors, and capacitance-based sensors. Impedance spectroscopy is now well known as a powerful technique for biological sensing characterization at both macroscopic and microscopic scales [3]. Electrodes serve for applying an electric field to the sample under test and for measuring the electrical detection signals. They also can provide information on relative permittivity and electrical conductivity of the biosamples, which correspond to intrinsic parameters [4]. At the macroscopic scale, impedance sensors are generally composed of two parallel plates where the sample is enclosed. They are easy to use but need a large quantity of biosamples (few to tens of mL). Moreover, electrodes only provide average information about the whole sample. On the contrary, the combination of impedance spectroscopy and microscopic electrodes, such as interdigitated sensors [5], provides more sensitive sensors that can analyze, at the microscopic scale, cell surface cultures [6], cell settling, and trapped bacteria, as well as detecting DNA oligonucleotides [7]. Beyond a simple interface, the geometrical properties of electrodes can have a significant impact on the efficiency of the biosensor [8, 9]. They need to be optimized a priori during the sensors’ design step according to the targeted application and the nature of the cells to analyze [10, 11]. To achieve this optimization of the sensor design, we present a detailed methodology to define the best interdigitated structure according to the targeted application. In the first section, a complete and detailed analytical model is presented. The model considers all the sensor’s parameters, such as the electrode length, gap, width, and electrical properties of the medium. Moreover, it accounts for double-layer effects. The model is based on the impedance model of a pair of electrodes, extended to a succession of electrodes, and considering edge effects. The model was validated using simulation by the finite element method (FEM). In the following section, “Interdigitated sensor optimization,” the effects of all geometrical parameters were tested independently to determine their impact on bioimpedance measurements. One important purpose is to maintain a sufficiently wide bandwidth to characterize the biosample over many decades. To obtain the correct optimization, which consists of the best compromise between bandwidth and sensitivity, a detailed optimization methodology is presented. A step-by-step description appears at the end of this section. The last section focuses on the experimental validation of the two previous sections. Five sensor designs with different degrees of optimization were fabricated using a classical microfabrication process. Characterizations were performed on calibrated electrolytic solutions and yeast cells samples by a conventional macroscopic probe and compared to the measurement performed with fabricated sensors.
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2 Analytical Method 2.1 Coplanar Electrodes Interdigitated electrodes are based on a succession of coplanar microelectrodes. The first step is to model the electrical response, which depends on the electric field distribution between a pair of coplanar electrodes. This pair of electrodes is assumed to be an electric capacitor. For standard parallel capacitors, electrodes are placed face-to-face with a uniform distribution of the electric field. When electrodes are gradually opened, the electric field extends in a wider space and generates a fringing field. However, if the electrodes open on a planar plane, the fringing field becomes heterogeneously allocated between the electrodes, and one obtains a coplanar electrode sensor [12]. Figure 1 illustrates the evolution from a parallel plate capacitor to a coplanar electrodes’ sensor. A simplified analysis for calculating the capacity of a pair of semi-infinite electrodes is first used to introduce two important design quantities, namely the penetration depth of the field T and the effective width of electrodes Weff . The twodimensional distribution of the electric field for this geometry can easily be solved with conformal mapping techniques using an inverse cosine transform [13]. For semi-finished electrodes, the capacity of a pair of finite-width electrodes w and gap g can be calculated as follows: 2ε0 εr L Q ln = C= 2V0 π
w 2 w 1+ −1+ 1+ a a
(1)
where Q is the total charge of a single electrode, ε0 the permittivity of the vacuum, L is the length of the electrodes and a = g/2. For L w, Eq. (1) provides a reliable estimation of the capacity for a pair of coplanar electrodes with finite width (w/g 1). The electrode’s width w establishes a maximum field penetration depth T in a medium whose thickness is labeled by hmed . The penetration depth is calculated from the elliptic contours, which correspond to the intensity of the field at a fixed position r = (x2 + y2 )−1/2 . T corresponds to the vertical displacement of the electric
Fig. 1 Transition of a parallel to a coplanar electrode capacitor. a Parallel electrode sensor, b open transition, and c coplanar electrode capacitor
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field line issued from the end of the electrode and can be calculated as follows: w w 2 −1 =a 1+ 1+ −1 (2) T = a sinh cosh a a For a medium whose thickness hmed < T, the capacitance is determined only by the electric field lines emanating from the effective width Weff , as shown in Eq. (3). we f f =a a
1+
h med a
2 −1
(3)
This concept of effective width is only applicable when the permittivity of the dielectric environment is higher than that of the air. This is the case for water-based solutions. The ratio hmed /T can be used as an approximate indicator of the signal detection level for this electrode geometry. When hmed T, the capacity does not depend on the sample thickness. This is confirmed by analytical simulations, as shown in Fig. 2, for coplanar electrodes with parameters T = 4.17 μm. The impact of the distance between the electrode and the edge of the sample gh is also examined. For gh ≥ 0.5 × hmed , we notice that the capacity is maximal with a constant value. Furthermore, when gh > T, gh has no more impact on the electrodes’ capacitance. Simulations confirm that Eq. (3) can be used as an approximation for the capacitance and allow for determining an optimal thickness for the two electrodes. The maximum capacitive signal can be obtained by minimizing the gap g while modeling electrodes, the width of which is comparable to the thickness of the solution. In opposition to parallel plates capacitors, the capacitance does not increase in proportion to w/a, but proportionally to ln(w/a). 400
gh=1μm gh=1,75μm gh=3μm gh=5μm gh=9μm
200
gh=16μm gh=28μm
h(μm)
C (pF/μm)
300
gh=50μm
100
0
gh=86μm gh=150μm
εr=80 gh
gh
T=4,17μm
1
Fig. 2 Capacitance as a function of hmed and gh
10
h(μm)
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2.2 Interdigitated Electrode Modeling 2.2.1
Semi-layer Capacitance Calculation
The analytical study of interdigitated electrodes allows for determining the essential geometrical parameters for optimization and how they influence the response of the biosensor. The structure of coplanar interdigitated electrodes is given in Fig. 3a. It can be considered as the concatenation of unitary symmetric coplanar electrodes forming fingers. These fingers have the same width w and are separated by an interval g. The length L is generally large enough to neglect the side effect of the electric field. The capacitance of unitary cells (CI /CE ) can be expressed according to kc cell , the unit cell factor. kc cell depends on three parameters: the metalization ratio η, the periodicity of electrodes λ [14], and the ratio of height/width r defined by Eqs. (4) and (5). The parameter λ depends on w and g. η=
Fig. 3 Diagram of interdigitated electrodes
2w w = w+g λ
(4)
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r=
2h med w+g
(5)
Using corresponding techniques of a conformal map (or angle-preserving), one can determine the internal and external capacitances of coplanar electrodes [15]. The equivalent electrical circuit for a configuration of N electrodes is shown in Fig. 3b. To simplify the model, we assume that the electrodes are sufficiently long to maintain a relatively constant electric field along the electrodes. Therefore, the capacitance of a single layer could be considered to be the association of two capacities: CI , which is the half-capacitance between the internal electrode and the reference (Vref = 0), and CE , which is the capacitance between an external electrode and the substrate. The total capacitance of a single layer is thus given by: C = (N − 3)
CI CE CI +2 2 CI + CE
(6)
If N < 4, the capacitance of a two-cell structure becomes C = CE /2. CI and CE can be calculated as follows. C/L = ε0 εr,med K cell (η, h med )
(7)
where ε0 is the vacuum permittivity, εr,med the relative permittivity of the sample medium, and kc cell is the geometric factor. kc cell can be calculated in the case of coplanar electrode configuration using Jacobi’s elliptic equations [12], as shown in Table 1. This technique uses the method of partial capacitances for a multilayer dielectric material with the calculation of partial parallel capacitance (PPC) and partial series capacitance (PSC) for each layer. In the case of a semi-infinite layer (hmed T), as here, the model is simpler and consists of calculating only one capacitance. To verify the analytical expression of the capacitance for interdigitated electrodes, simulations were performed using FEM with COMSOL Multiphysics software and AC/DC modules. The capacitance (C) is determined as follows: C = Q/V (where Q is the electric charge and V the electric potential). Three sets of simulations were done, and results are given in Fig. 4a–c. First, simulations were performed by varying εr,med from 1 to 100, for two numbers of electrodes (N = 10 and 20) by keeping η to 0.5. They were performed considering a semi-infinite layer: hmed → ∞ for analytical models and hmed T for FEM simulations. Second, simulations were performed by varying the electrodes’ periodicity λ for 8 layer heights by keeping η to 0.5, εr,med to 80, and using the semi-finite kc cell coefficient. These results demonstrate that the impact of the sample height can be neglected if it is at least two times higher than the electrodes’ periodicity. Ninety-nine percent of the injected signal power is concentrated in the first 2λ depth. This property allows for controlling the penetration depth of the electric field of interdigitated electrodes by fixing λ.
h=∞
h 0.7, the electrodes are quite close to each other, the simplified model is no longer valid (see Eq. 3), and the electric field is concentrated in too confined a volume. From the results of Figs. 10, 11, 12 and 13, one can conclude that the metalization ratio can efficiently contribute to a reduction of the double-layer effect and increase the useful frequency band when g or w are increased. Under these conditions, it is more suitable not to choose too high or too low a ratio of η to keep a good electric field distribution. η = 0.5 (g = w) provide the most uniform electric field distribution between the interdigitated electrodes.
3.3 Effect of Substrate Capacitance The electrical effect of the substrate (ZS ) is mainly due to its permittivity, ranging from 2 to 14 (relative), depending on the material used, as seen in Table 3. Substrate electrical conductivity is generally very low and neglected. Substrate permittivity adds a capacitive semi-layer in parallel with the characteristic impedance of the biosensors. Global impedance ZT can be calculated using Eqs. (32) and (33). Substrate impedance is calculated using the same Kcell factor as for sample impedance. Due to the low relative permittivity of substrate materials compared to water, its capacitance effect occurs at higher frequencies and has only an impact on f c,HF , as shown in Eq. (34). If the relative permittivity of the substrate is low compared to the sample permittivity, the decrease in f c,HF remains minimal. For example, a relative glass permittivity of 4.7 induces a decrease in f c,HF of only 6%, as compared to f c,HF calculated without taking into account glass permittivity. Glass substrate is transparent, resistant to numerous solvents, stable, easy to handle for processing, biocompatible, cheaper than other substrates, and presents a low relative permittivity. For that, it is the more suitable material to use for the substrate. YT =
Table 3 Electrical relative permittivity and conductivity of different substrate materials
1 (N /2) − 1 N −1 N −1 + + + Z i1 Z i,sup ZL ZS
(32)
Material
Relative electrical permittivity
Electrical conductivity (σ/m)
PTFE
2.1
εch . The sensitivity of the tunneling frequency was evaluated by changing the dimensions of the ENZ waveguide. Three cases were studied: (a) smaller ENZ height and smaller cavity length, i.e. ach = a/64, L cav = L/10; (b) higher ENZ height and smaller cavity length, i.e. ach = a/16, L cav = L/10; and (c) smaller ENZ height and larger cavity length, i.e. ach = a/64, L cav = L/5. From Fig. 19a, b, it can be observed that the sensitivity in both cases is of the same order. The sensitivity is defined here as the ratio of the change in tunneling frequency to the change in the relative permittivity of the test dielectric material. For the same length of cavity (L cav = L/10), the quality factor calculated for the smaller ENZ waveguide height (ach = a/64) is found to be better than the higher ENZ waveguide height (ach = a/16). From Fig. 19c, it can be observed that increasing the cavity length (L cav = L/5) of the ENZ waveguide increases the sensitivity due to an improved perturbation effect, while a better quality factor is obtained due to the smaller ENZ waveguide height (ach = a/64). However, the fundamental Fabry-Pérot resonances in the TE101 mode are found to be almost independent of the change in relative permittivity of the test material. The immunity in f 101 towards the change in the dielectric constant of test material suggests a minimum of the electric field. For the single port excitation of the ENZ waveguides shown in Figs. 9a and 18, a minimum of the electric field in the TE101 mode is expected at the center of the ENZ
Epsilon-Near-Zero Microwave Sensors Fig. 19 Transmission coefficient for the U channel of Fig. 18 with L = 127 mm, b = 2a = 101.6 mm, ε = 2ε0 , and εch = ε0 : a ach = a/64, L cav = L/10; b ach = a/16, L cav = L/10; and c ach = a/64, L cav = L/5. Solid lines: full-wave simulations; dashed lines: TL model (Reprinted with permission from [14]. Copyright ©2008 The American Physical Society.)
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channel. It may be noted from Fig. 19 that the transmission line model and numerical analysis do not match well around Fabry-Pérot resonances. This may be due to the reactive shunt loads that were safely neglected in the transmission line model are now effective due to the larger value of the effective permittivity (i.e., εeff > 0) for the TE10p modes (p = 0). From the above discussions, it is confirmed that the ENZ microwave sensor can be designed and fabricated using standard waveguide technology. Since the metallic waveguides are bulky, costly, and not easy to integrate with monolithic microwave integrated circuit (MMIC) and planar devices, the planar technology is very common in practice. In the next section, an ENZ waveguide is designed and fabricated using planar technology. Planar technology allows the easy and cost-effective production of microwave devices, leading to flexibility and novelty in design. Planar technology can be used to design an ENZ microwave sensor operating at multiple frequencies, as explained in the next section.
9 Planar Waveguide as ENZ Microwave Sensor Dielectric sensing in a metallic waveguide utilizes the tunneling frequency, which occurs near the cutoff frequency of the waveguide. The cutoff frequency of the dominant TE10 mode of the waveguide depends on the width of the waveguide and the dielectric constant of the non-magnetic material used in the waveguide. The previous section shows the impact of the dielectric material on the cutoff frequency and the associated ENZ effect. In this section, a fixed dielectric material is used to create the ENZ waveguide cavity, and the width of the ENZ section of the waveguide is varied to observe the ENZ effect. A planar design of the ENZ waveguide cavity is shown in Fig. 20, where the input and output ports are chosen to be the SubMiniature version A (SMA) type 50 coaxial lines, which provide easy connection with the vector network analyzer (VNA) for the measurement of transmission coefficients. The dimensions of the ENZ waveguide cavity are: a = 41 mm, b = 3 mm, L = 53 mm, L t = 4 mm, and T t = 1 mm. The dielectric constant of the substrate is 4.3 and is considered to be lossless in the theoretical analysis. The width of the ENZ section, W t , is parametrically tuned to a lower value from the initial value (i.e. W t = a). The transmission coefficients are calculated using the full-wave EM solver and given in Fig. 21. From Fig. 21, it can be observed that reducing the value of W t provides significant control over the ENZ tunneling frequency, f 100 . It may be noted here that the length of the ENZ waveguide is smaller than the width, which takes the fundamental Fabry-Pérot resonance at a higher frequency than the cutoff of the second-order waveguide mode, i.e. the TE20 mode. From (15), the cutoff frequency of the dominant mode, where the ENZ transmission is expected for W t = a, is found to be 1.76 GHz, while the first Fabry-Pérot resonant frequency corresponding to the TE101 mode is 18.17 GHz and the cutoff frequency of the TE20 mode is 3.53 GHz. Reducing the value of W t < a tailors the cutoff frequency of the dominant mode of the ENZ waveguide. However, the cutoff of the TE10 mode of the external waveguides
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Fig. 20 Single-layer ENZ waveguide based on fully laminated planar technology [15]
Fig. 21 Variation of the tunneling frequency for various values of W t [15]
is fixed, and so the cutoff of the TE20 mode, which becomes comparable to the cutoff of the dominant mode of the ENZ waveguide at W t ~ 0.5a. In other words, the value of W t required for tuning of the tunneling frequency must be greater than 0.5a, which keeps the planar device operating in the dominant mode and below the cutoff frequency of the TE20 mode.
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10 Multilayer Planar ENZ Sensor: Single-Mode Multiple Frequencies Since the change in W t helps in tailoring the tunneling frequency, this useful property can be used to design the ENZ waveguide or ENZ waveguide cavity working at multiple frequencies. The design of the ENZ waveguide cavity, which operates at two frequencies, is given in Fig. 22. In this figure, two ENZ channels of unequal width are stacked vertically and sandwiched between the two external waveguide sections. The width of the second ENZ channel is chosen within the limit of the dominant mode of operation, i.e. W t > 0.5a. The dielectric constant of the lossless substrate is assumed as 4.3 and the dimensions of the two-layer design, as shown in Fig. 22, are: a = 34 mm, b = 4.8 mm, L = 41 mm, L t = 4 mm, T t1 = T t2 = T g = 1.6 mm, and W t = 26 mm. Similar to the earlier single layer design (Fig. 20) the two-layer design of Fig. 22 is equipped with two SMA type 50 coaxial ports for measuring the transmission parameters using VNA. The two-layer structure described above is modeled in the full-wave EM simulator and the transmission coefficients are calculated. It is found that the unloaded ENZ cavity, as shown in Fig. 22, resonates at two frequencies corresponding to the two transmission peaks. The first ENZ transmission peak is observed at frequency f t1 = 2.49 GHz, while the second ENZ transmission peak is observed at frequency f t2 = 2.99 GHz. The electric field is numerically calculated at these two frequencies and shown in Fig. 23. From this figure, it is found that the ENZ channel with a larger width, W t = 34 mm (i.e., channel T1), operates at f t1 , while the ENZ channel with a smaller width, W t = 26 mm (i.e., channel T2), operates at f t2 . It can be observed from Fig. 23 that the electric field distribution has a half-wave variation along the x-direction while there is no variation along the y-direction, which demonstrates the presence of the dominant mode inside the ENZ tunnels. It is interesting to note that the variation of the electric field inside the tunnel is sinusoidal in the x-direction,
Fig. 22 Two-layer ENZ sensor using fully laminated planar technology [15]
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Fig. 23 Electric field distribution: a for channel T1 in YZ-plane, b for channel T1 in XY-plane with a perspective view, c for channel T2 in YZ-plane, and d for channel T2 in XY-plane with a perspective view
while it is uniform in the y- and z-directions. From the study of the electric field configuration, it is now easy to recognize the modal indexes, i.e. m = 1, n = 0, and p = 0, which indicates that both the modes are the TE100 mode. It may be noted from Fig. 23 that the electric field at the geometric center of each of the channels is maximum and intensified in comparison to the electric field in the external waveguide sections. Therefore, the geometric center of the ENZ channels is chosen for the sample inclusion and dielectric testing of materials [15, 16]. A cylindrical sample of diameter d, which passes through both the ENZ channels, is considered for the numerical analysis with the arrangement shown in Fig. 22. For the numerical analysis, the relative permittivity of the test material is varied across a broad range, from 2 to 90, and the tunneling frequencies for the loaded channels, T1 and T2, i.e. f s1 and f s2 , are calculated. The numerical analysis of the loaded, two-layer ENZ waveguide cavity is also carried out at different values of channel length while the sample diameter is kept constant. The results of the numerical analysis are shown in Fig. 24, where the loaded tunneling frequencies related to channels T1 and T2 are normalized with the unloaded ENZ frequency of channels T1 and T2, respectively. From Fig. 24, it can be suggested that the smaller length of the ENZ channel results in higher sensitivity. The sensitivity, as defined earlier, can be given from the slope of each curve. From Fig. 24, it may be observed that one-unit change in the relative permittivity of the material under test results in a 12 MHz shift in f s1 and 18 MHz in f s2 . To quantify the result, let us consider a sample with relative permittivity 80 (similar to the dielectric constant of water). For a sample having a relative permittivity close to water, there is almost a 900 MHz and 1100 MHz change recorded in f s1 and f s2 , respectively, which highlights one of the applications of the multilayer ENZ planar sensor utilizing the single-mode multiple-frequency technique.
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Fig. 24 Normalized tunneling frequency of channels T1 and T2 versus relative permittivity for various ratios of sample diameter to tunnel length [15]
From the above discussions, it can be concluded that the ENZ waveguide and cavity can be utilized as a potential candidate in microwave sensing of a broad range of dielectric materials. The single-layer and multilayered ENZ structure that was created using fully laminated planar technology can also be fabricated using substrate integrated waveguide technology. The multilayered ENZ waveguide sensors provide single-mode multifrequency measurements, which can be very useful in the characterization of dispersive dielectric materials [15].
11 Conclusions This chapter briefly describes the epsilon-near-zero (ENZ) effect in waveguides as well as the practical realization of metallic and planar ENZ waveguides and cavities. ENZ technology is quite impressive in the creation of a futuristic, bendable, dispersion-less, flexible sensing devices for microwaves to photonics. Though much research is being undertaken towards the technical implementation of epsilon-nearzero (ENZ) and mue-near-zero (MNZ) [] devices, the limitations on utilizing them in sensing technology need to be addressed carefully. One of the fundamental limitations of the ENZ device, i.e. single-frequency operation, has recently been overcome, and the concept of the multi-frequency ENZ microwave sensor has been explained. Moreover, the theory and examples presented here provide the foundations for achieving ENZ transmission or resonance through arbitrary waveguides in microwave systems as well as in the domain of optics. The ENZ transmission (or resonance) can be implemented in a waveguide (or cavity) having bends, twists, and sharp corners in
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both the E and H planes, which provides an ample amount of flexibility in designing novel microwave devices and sensors.
References 1. A.V. Mamishev, K. Sundara-Rajan, F. Yang, Y. Du, M. Zahn, Sensors and transducers. Proc. IEEE 92(5), 808–845 (2004) 2. A.R.M. Syaifudin, S.C. Mukhopadhyay, P.L. Yu, Modelling and fabrication of optimum structure of novel interdigital sensors for food inspection. Int. J. Numer. Model. 25(1), 64–81 (2012) 3. S. Marcos, G. Silveirinha, N. Engheta, μ-near-zero supercoupling. 195112, 1–7 (2015) 4. A. Alù, M.G. Silveirinha, N. Engheta, Transmission-line analysis of ε-near-zero-filled narrow channels. Phys. Rev. E 78(1), 016604 (2008) 5. A.M. Mahmoud, N. Engheta, Wave-matter interactions in epsilon-and-mu-near-zero structures. Nat. Commun. 5(1), 1–7 (2014) 6. B. Edwards, A. Al, M.G. Silveirinha, N. Engheta, Reflectionless sharp bends and corners in waveguides using epsilon-near-zero effects. J. Appl. Phys. 105(4) (2009) 7. C.A. Balanis, Advanced Engineering Electromagnetics (Wiley, USA, 1989). 8. G. Conciauro, M. Guglielmi, R. Sorrentino, Advanced Modal Analysis: CAD Techniques for Waveguide Components and Filter (Wiley, England, 2000). 9. D.M. Pozar, Microwave Engineering, 4th edn. (Wiley, USA, 2012). 10. B. Edwards, A. Alù, M.E. Young, M. Silveirinha, N. Engheta, Experimental verification of epsilon-near-zero metamaterial coupling and energy squeezing using a microwave waveguide. Phys. Rev. Lett. 100(3), 1–4 (2008) 11. A.K. Jha, M.J. Akhtar, A generalized rectangular cavity approach for determination of complex permittivity of materials. IEEE Trans. Instrum. Meas. 63(11), 2632–2641 (2014) 12. J.-S. Hong, Microstrip Filters for RF/Microwave Applications (Wiley, USA, 2011). 13. N. Marcuvitz, Waveguide Handbook (Peter Peregrinus Ltd., on behalf of the Institution of Electrical Engineers, United Kingdom, 1993). 14. A. Alù, N. Engheta, Dielectric sensing in ε-near-zero narrow waveguide channels. Phys. Rev. B Condens. Matter Mater. Phys. 78(4), 045102 (2008) 15. A.K. Jha, M.J. Akhtar, Design of multilayered epsilon-near-zero microwave planar sensor for testing of dispersive materials. IEEE Trans. Microw. Theory Tech. 63(8), 2418–2426 (2015) 16. A.K. Jha, M.J. Akhtar, Design of microwave ENZ sensor for contamination detection in liquids using SIW technology. IEEE MTT-S Int. Microw. RF Conf. 2014, 338–341 (2014) 17. A.K. Jha, N. Delmonte, A. Lamecki, M. Mrozowski, M. Bozzi, Novel MNZ-type microwave sensor for testing magnetodielectric materials. Sci. Rep. 10, 16985 (2020). https://doi.org/10. 1038/s41598-020-73696-8
An Overview of Interdigitated Microwave Resonance Sensors for Liquid Samples Permittivity Detection S. Kiani, P. Rezaei, and M. Fakhr
Abstract Microwave sensors based on electrically small planar resonant elements are investigated in this season. Due to the high sensitivity of these resonators to the properties of their environment, especially the dielectric constant and the loss coefficient, these sensors are of particular importance for the dielectric characterization of solids and liquids and for measuring the composition of materials. This chapter also deals the main advantages and limitations of planar microwave resonant sensors, and several prototypes are reported, mainly including sensors for measuring the dielectric properties of solids, and sensors based on microfluidics (useful for liquid characterization and liquid composition). The proposed sensors have great potential for use in real scenarios (including industrial processes and characterization of bio-samples).
1 Introduction The measurement of electromagnetic properties is widely used to determine of chemical and biological material, and microwave sensors are one of the devices used in this field. The planar sensors employed in identification of electromagnetic properties in various frequency bands can be used in industry, healthcare and imaging. The material under test can be in liquid, solid or gas state. The planar sensors can be non-resonant (broadband) and resonant (narrow band). Among these, resonant methods have become more popular, especially for applications that require high speed, accuracy and sensitivity in detection. Because resonant elements are sensitive to the properties of their surroundings, microwave sensors based on such elements have been used in many different scenarios, including material characterization, bio-sensing, ambient monitoring, defect detection, motion control, chemical analysis, microfluidics, etc. Furthermore, sensor implementation in planar technology is attractive for various reasons, such as the possibility of development low-profile and low-cost sensors, conformal sensors, recyclable sensors, wearable sensors, integrated S. Kiani (B) · P. Rezaei · M. Fakhr Faculty of Electrical and Computer Engineering, Semnan University, Semnan, Iran e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_7
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sensors, submersible sensors, or sensors compatible with other technologies (e.g., microfluidics, substrate-integrated waveguide-based sensors, lab-on a-chip sensors, etc.). According to their principle of operation, microwave resonant sensors can be partitioned into: frequency-variation sensors, phase-variation sensors, frequencysplitting sensors, coupling-modulation sensors and differential-mode sensors. In frequency-variation sensors, the desired variable changes the resonance frequency and magnitude for the sensing element based on a resonator. Such sensors are simple and easy to design, and they are very common. Frequency-variation sensors are especially important for characterization of materials, because the resonant frequency of the sensing resonators is perturbed by the presence of a material in contact with it or in close proximity to it [1]. This section is focused on planar sensors based on resonant elements to describe materials such as solids or liquids and four designs: Planar sensor for liquid [2], Microwave sensor for multilayer solid material [3], Sensor for the non-invasive measuring of blood glucose [4], and Dual-frequency microwave sensor for liquid [5] are examined.
2 Modified Planar Sensor for Measuring Dielectric Constant of Liquid Materials 2.1 Abstract A planar U-shaped resonator is developed for measuring relative permittivity of the liquid materials. Gap sections, coupled lines and central ring resonators (RRs) are used to achieve more sensitivity. Further to increase the resonance sharpness, a tapered double-sided spiral split ring resonator (TDSS-SRR) is presented. In addition same as [6], the ground plane under the proposed cell is removed that results the electric field is focused on the top surface of the resonator. As the permittivity of the liquid under test (LUT) is increased from 26 to 79, the measured resonance frequency of the proposed sensor is varied in the 166.4–287.5 MHz range. Compared to the reported structure [6], the investigated configuration shows better sensitivity in electrical performance. The developed sensor exhibits an improvement in sensitivity of about 45%.
2.2 Proposed Sensor Configuration As shown in Fig. 1, a modified sensor to constant dielectric detection of liquid is presented by utilizing a TDSS-SRR and U-shaped resonator. Same as the previous work [6], a microstrip line loop is used as all sides of magnetic coupler to excite the proposed TDSS-SRR. This feeding method obtains an inductance with large value, which provides a low Q-factor resonance. The presented TDSS-SRR is
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Fig. 1 Schematic diagram of presented sensor configuration
tapered exponentially (from W3 to W4 at the bottom and vice versa at the top) to introduce high-impedance circuit that improves resonance values of the sensor. Furthermore, the U-shaped resonator is extended to enhance resonance sharpness and frequency adjustability. The described U-shaped resonator comprised of several coupling sequences. These couplings generate different capacitance values which provide an adjustable and deep resonance. The structure and the equivalent circuit models of the investigated sensor and the conventional sensor [6] are illustrated in Fig. 2. In [6], Lr and Cr represent equivalent inductance and capacitance of DSS-SRR, respectively. CI is the capacitance associated with the interdigital resonator. In the proposed sensor, tapering function provides high-impedance line which results in increasing of Lr and decreasing in Cr values of the conventional DSS-SRR simultaneously. Thus, resonance values of the sensor are improved. Furthermore, the interdigital section (CI ) of [6] is replaced with the U-shaped resonators [coupling and parallel capacitances (C1 … C7 and C1 …. C4 )] which in turn intensify the electric fields in the resonance area that increases dielectric loading interaction. So, the sensitivity of the sensor layout will be enhanced.
2.3 Sensor Performance and Comparison The configuration of the presented microwave sensor is distinct from that reported in [6]: First, an exponential tapering function is presented to enhance the impedance
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Fig. 2 Circuit model for a conventional [6], b proposed sensor
[increasing DSS-SRR equivalent inductance (Lr ) and decreasing equivalent capacitance (Cr )] of the proposed DSS-SRR, and to improve the resonance values of the sensor. Second, the interdigital resonance section of [6] is replaced by a new resonator with sequential coupling topologies to intensify the interaction between electric field and the loaded liquid material, and to modify sharpness of the resonance. The developed sensor is designed and fabricated on a substrate RO4003 with 20 mil thickness, the length (Ls ) and width (Ws ) equal to 1.8 and 1.2 cm, respectively. According to Fig. 1, the design parameters of the designed construction are tabulated in Table 1. Table 1 Detail parameters of proposed sensor (in millimeters) Substrate
TDSS-SRR
Proposed U-shaped resonator
WS
12
w1
2.1
L1
12
L3
2.3
S2
0.15
g3
0.2
LS
18
w2
0.75
L2
9.5
L4
1.05
S3
0.15
R3
0.3
hS
0.508
w3
0.35
R2
1.15
L5
1.8
S4
0.15
R4
0.65
w4
0.2
R4
1.55
L6
0.75
g1
0.2
S1
0.2
g2
0.15
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Fig. 3 Simulated and measured S11 of proposed sensor
The S-parameters of the investigated configuration are evaluated by employing finite element method with ANSYS high-frequency structure simulator full wave solver. The simulated and measured results of the proposed sensor for permittivity detection of various liquids such as ethanol, methanol and deionized water are plotted in Fig. 3. Moreover, Fig. 3 illustrates the results for empty (unloaded) case. The good compromise between the results shows the design validity of the proposed sensor. In the measurement process, the relative permittivity of the loaded ethanol–water mixture is varied from 26 to 79 for ethanol concentration between 100 and 0% as reported in [6]. Figure 4 demonstrates that the resonance frequency of the proposed sensor decreases from 287.5 to 166.4 MHz by loading ethanol with concentration from 100 to 0%, respectively. Although in same condition, this value is shifted from 166 to 117.9 MHz in [6]. As depicted in Fig. 4, for variation of the relative permittivity, the resonance values
Fig. 4 Measured return loss of proposed sensor in water–ethanol mixture relative dielectric constant detection process
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are between −29 and −10 dB in the presented configuration due to high-resonance values. Meanwhile, in the conventional microwave sensor [6], minimum values of the return loss vary from −10 to −4 dB in the operational frequencies. Additionally, the diverse coupling capacitances in the investigated U-shaped resonator make the significant shift in resonance frequencies proportional to dielectric constant variations. The sensitivity of a microwave sensor can be derived as [6]: S=
( f 01 − f 02 ) 1 [%] f 01 εr
(1)
where f 01 and f 02 are resonance frequencies related to low and high permittivities, respectively. According to (1), the proposed sensor exhibits 0.795% sensitivity for relative dielectric constant change of 53 in water–ethanol mixture, whereas traditional sensor [6] was shown 0.547% sensitivity, similarly. So, compared to [6], the investigated sensor illustrates about 45% detection sensitivity improvement. Furthermore, in the empty case, the resonance value for [6] was about −8 dB, whereas it is about −29 dB in the proposed sensor. Also, the frequency detection resolution (FDR) of sensor for relative permittivity change of (1) can be yielded by (2): FDR =
( f 01 − f 02 ) (GHz) εr
(2)
where εr represents the relative permittivity variation, f01 and f02 denote upper and lower frequencies in detection process, respectively. Consequently, the FDR for water–ethanol permittivity sensing is about 0.9 and 2.2 MHz for [6] and the proposed sensor, respectively. Therefore, utilizing the designed sensor will be able to improve measurement accuracy of relative permittivity of the liquids. The presented sensor is compared with conventional structure [6] and relevant figure-of-merit parameters are listed in Table 2. Table 2 Performance comparison among proposed sensor and conventional design [6] Name
FDR (MHz)
Sensitivity (%)
Frequency (MHz)
Resonance value (empty) (dB)
Electrical size
Conventional [6]
0.9
0.547
300.4
−8
λ0 /50
Proposed sensor
2.2
0.795
357.8
−29
λ0 /46
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3 Microwave Sensor for Detection of Solid Material Permittivity in Single/Multilayer Samples with High Quality Factor 3.1 Abstract In this study, a planar microstrip sensor based on band-stop filter is presented for determining relative permittivity of single layer and multilayer solid materials. The proposed sensor has been composed from the structure of meandered microstrip line (MML) with T-shaped resonator and an interdigital structure that is connected to ground by via. Interaction between T-shaped resonator and interdigital structure is caused to increase electric field intensity and the high field increase the sensor sensitivity and resolution. The microwave sensor is fabricated on the substrate RO4003 by using single layer technology. The samples of FR4 and RO4350 in single and double layer forms as multilayer is placed on the sensor and the sensor demonstrates different resonance frequencies. When the samples placed on a region of the strong field, interaction among them increase sensitivity and due to high Q-factor, there is a high resolution. The relationship between changing the resonance frequency and variation of the relative permittivity is linear and it determines unknown materials dielectric characterizations. The permittivity of samples changes from 3 to 11 therefore the resonance frequency varies linearly from 3.7 to 5.65 GHz. The proposed sensor shows improvement relative to other similar works in the fields of sensitivity and quality factor.
3.2 Sensor Design The diagram of the considered sensor is displayed in Fig. 5. This diagram is included an oscillator, a detector, a filter and monitor system which they are needed for the complete measurement system [7]. This structure is introduced as a sensor. There Fig. 5 Block diagram of unknown solid materials detection
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Fig. 6 Geometric layout of the proposed structure
are many ready circuits that can be used as an oscillator, a detector and a monitor in the sensor, while their designing are not different for types of structures, therefore, the most main and important part of a sensor in the presented block diagram is filter. The goal of this research is an investigation of filter as a main part of the sensor. A band-stop microstrip filter is proposed for designing sensor. The parameters of filter such as insertion loss and bandwidth depend on substrate permittivity. When a sample place on the sensor, it can change the frequency response. Variation of frequency response depends on location of sample on the sensor, because when sample place in the region that the electric field intensity is high, it is caused to increase field interaction as a result variation of the resonance frequency. Therefore, changing the resonance frequency can depict added sample characterizations. The proposed band-stop microstrip filter layout is shown in Fig. 6. The designed filter consists of a T-shaped, MML and interdigital structures. The Tshaped and the MML structures are joined to each other and the interdigital structure is connected to ground by via and this is caused to increase the potential difference between interdigital and MML connected to T-shaped. The electric field is distributed on the MML and interdigital, and the electric field intensity enhances at resonance frequency. Figure 7 displays the electric field distribution. The location where the field is strong, determines the location of the sample, because when samples are placed in the MML and interdigital structures region where the field is strong it is caused to enhance field interaction between the sample and sensor, and it increases the sensor sensitivity and resolution. The filter parameters are given in Table 3. The proposed filter is fabricated on a RO4003 substrate with 3.38 dielectric constant, tan δ = 0.0026 and a thickness of 0.508 mm. Figure 8 shows the filter frequency response without the placement of any sample on the sensor, so that, the resonance frequency is about 5.65 GHz.
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Fig. 7 Electric field distribution of the proposed sensor at the resonance frequency
Table 3 The parameters values of the presented filter Par
L1
L2
L3
W1
W2
W3
W4
W5
LS
WS
dvia
Val
10.4
3.7
6.3
1.2
6.5
6
0.7
0.4
30
13
0.7
Par parameters; Val Value (mm)
Fig. 8 The frequency response of unloaded filter
According to Fig. 8, in the range shown, the transmission response (S21 ) doesn’t have the pole but it has a transmission zero that it is created in the resonance frequency. When the sample is placed on the sensor, it is expected that the transmission zero is moved. For investigation of sensor, a solid material with different permittivity
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are examined. On most sensors, the samples must cover whole of filter while in presented sensor, sensing dimensions is small, so that the sample dimensions is 6.8 mm × 8.4 mm because this size covers the region of strong electric field while the sample size in [8], is 20 mm × 20 mm, therefore, the sample dimensions are decreased. The proposed sensor will be able to increase accuracy of solids permittivity measurement. The important property of presented filter is a high Q-factor. The Qfactor characterizes a resonance bandwidth relative to its center frequency, therefore increment of Q-factor depicts the high resolution for a sensor. The Q-factor can be derived from [9]: Q=s
f0 f ±3d B
(3)
where f is the +3 dB bandwidth and f0 is the center frequency. Q-factor is 217 for the unloaded sensor and is 38 for the presented sensor in [8], however the resolution of the presented sensor is increased compared to traditional design of [8]. In presented sensor, different sections are coupled with each other and for achievement of equivalent circuit, circuit model of each section must be obtained. The equivalent circuit model of each part are shown in Fig. 9a. The MML and T-shaped structures are equivalent inductance, the interdigital structure and the open circuit stub are modeled with the capacitance, the via can be modeled with the parallel capacitance and inductance. The equivalent circuit model for the proposed sensor is depicted in Fig. 9b. In equivalent circuit, CS is the capacitance due to the open circuit stub, LM and LT are the inductances due to the MML and T-shaped structures respectively, and CID is the capacitance due to the interdigital structure. Parallel Lvia and Cvia are the inductance and capacitance due to the vias. GMS, GTS, GTID and GIDM are the coupling capacitances due to gap between MML and open circuit stub, T-shaped and open circuit stub, T-shaped and interdigital and, also interdigital and MML, respectively.
3.3 Measurement Results For validation of measurement, the samples relative permittivity changes from 3 to 11, then resonance frequency is obtained. Also the FR4 and the RO4350 materials place on the sensor and the frequency response behavior is investigated. The relationship between the frequency response behavior and variations of the samples permittivity is caused to detect unknown solid materials dielectric characterizations. The measurements to change the permittivity of the samples are shown in Fig. 10. Figure 11 shows the samples permittivity effective variation. When the sample relative permittivity increases, the resonance frequency decreases from 4.9 to 3.7 GHz, whereas in the same condition, this value is shifted
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Fig. 9 a Equivalent circuit model of each part of the sensor, b equivalent circuit model of all the sensor
from 5.2 to 4.1 GHz in [8]. As illustrated in Fig. 11, for changing the relative permittivity, the resonance values are between −50 and −49 dB in the proposed configuration, therefore, it can be said that the resonance value is almost fixed with changing the relative permittivity, while in the proposed sensor of [8], values of resonance change from −41 to −21 dB in the operational frequency. A sample with the grater dielectric constant has a larger downshift of the resonance frequency. However, the sensor sensitivity increases corresponding to the increment of the samples relative dielectric. Corresponding to (1), the considered sensor demonstrates sensitivity of 3.25% for permittivity variation equal to 8 of the samples, whereas sensor of [8] was observed sensitivity of 2.6%, similarly. However, the proposed sensor depicts about significantly improvement in sensitivity compared to [8]. Also, the value of resonance in [8], was about −22 dB in the without sample mode, whereas in the
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Fig. 10 Measurement of scattering parameters for fabricated prototype
Fig. 11 Variation of the resonance frequency with changing the relative permittivity
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Table 4 Comparison between proposed design and different references Refs.
FDR (GHz)
Sensitivity (%)
Freq. (GHz)
Resonance value (dB) (empty)
[8]
0.12
2.6
7.6
−22
[9]
0.1
2.2
4.53
−15.26
Q-factor
Sample size MLM (mm × mm)
38
20 × 20
✓
150
2.1 × 1
−
[10]
0.05
2.7
2.1
−11
110
14 × 14
−
This work
0.17
3.25
5.65
−48
217
6.8 × 8.4
✓
MLM Multilayer Measurement
investigated sensor, it is about −48 dB. According to Eq. (2), the FDR for sensing of sample dielectric constant is about 0.17 and 0.12 GHz for the presented sensor and in [8], respectively, however, there is an improvement in FDR compared to traditional structures of [8]. There are many techniques for designing sensor that suffer from low Q-factor with low sensitivity that decrease their abilities of determining small variations in dielectric characterization of unknown materials. The proposed sensor has a high Q-factor compared to work similar to [8], therefor the sensitivity of sensor increase. This depicts that the presented sensor has high sensitivity with the abilities of characterizing and determining a small variation in materials dielectric characterization. The sensor’s sensitivity is introduced as the shift in frequency response versus the changes of the samples relative permittivity and initial frequency. The variation in resonance frequency is relative to the interaction between the sensor and sample electric fields and it is caused to decrease resonance frequency and Q-factor. However, a frequency response with narrower bandwidth and sharper dip indicates a high Q-factor that leads the sensor to characterize and determine changes of materials at narrow-band frequencies. The designed sensor is compared with the traditional structure of [8], and comparative parameters are depicted in Table 4. For the results validation, the measurement has been implemented and the measured and simulated are compared to each other. In the practical, the FR4 material having 4.6 relative dielectric and loss tangent of 0.02 and RO4350 material having a 3.66 relative dielectric and loss tangent of 0.004 are used as the samples. The sample’s thickness is 1.60 and 1.53 mm, respectively, as in [8]. For measuring, the samples place on the sensor in a region of sensing that have been depicted in Fig. 12, then the sensor with the samples is measured to obtain the frequency response. The proposed sensor structure with the samples of FR4 and RO4350 and position of samples on the sensor are indicated in Fig. 12, and the results of measurement for the presented sensor with the samples of single layer are displayed in Fig. 13. Figure 13 depicts that with increasing the samples relative dielectric the resonance frequency shifts downward. When the FR4 sample has a relative dielectric more than the RO4350 sample, the resonance frequency relative to FR4 shifts more downward than the RO4350 sample corresponding to reference without samples that was illustrated in Fig. 8. Without any sample, the resonance frequency is at 5.6 GHz, but when the FR4 and RO4350 materials are used as sample, the resonance frequency shifts to
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Fig. 12 a Picture of the presented sensing, b position of sensing, c RO4350 sample on the sensor, d double RO4350 samples on the sensor
Fig. 13 Simulated and measured frequency response with RO4350 and FR4 samples
4.6 and 4.9 GHz, respectively. To develop the results, for difficult and complicated conditions, samples structure with double sample structures are used as multilayer. In this situation, double samples of RO4350 + RO4350 and FR4 + FR4 are experimented. The measured and simulated transmission coefficient for the double samples are depicted in Fig. 14. From the Fig. 14 is shown when the sample layer is double, the frequency response as a result resonance frequency shifts downward. When FR4 + FR4 and RO4350 + RO4350 double materials are used as samples, the resonance frequency shifts to 4.5 and 4.7 GHz, respectively. When the sample is placed on the sensor, the electric field distribution of the presented sensor are shown in Fig. 15. Therefore, the proposed
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Fig. 14 Simulated and measured frequency response with RO4350 + RO4350 and FR4 + FR4 samples
sensor can detect the permittivity of single layer and multilayer samples. Sensor parameters values for single layer and multilayer samples are indicated in Table 5. Resonance frequency for single layer and multilayer FR4 sample are 4.58 and 4.5 GHz, respectively. Also resonance frequency for other single-layer and multilayer samples are 4.9 and 4.7 GHz, respectively. Results of Table 5 illustrate that as the sample layer increase, resonance frequency shifted downward. When the simulation and measurement results are close to each other, this demonstrates the validity of the results, thus the low results difference indicates low error. The error is illustrated with the difference between the sample measurement resonance frequency (fSM ) and the sample simulation resonance frequency (fSS ) relative to the free load resonance frequency (fFL ) which is shown in Eq. (4). The values of error are illustrated in Table 5. Error =
| f S M − f ss | [%] fFL
(4)
According to the simulations and measurements implemented, the presented sensor can detect solid materials having relative permittivity of different and unknown. The proposed band-stop filters can be used as a sensor in various applications such as detection of changing blood glucose concentration. Also, Q-factor and FDR of the proposed sensor is more than the traditional paper as [8], therefore the sensitivity and resolution have improved.
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Fig. 15 Electric field distribution of the proposed sensor with the sample at the resonance frequency a RO4350 sample on the sensor, b double RO4350 samples on the sensor, c FR4 sample on the sensor, d double FR4 samples on the sensor
Table 5 Value of parameters for single and double samples stations Samples
Freq. (GHz)
S21 (dB)
Q-factor
Error
With single FR4 sample
4.58
−40
82
With double FR4 samples
4.5
−23
46
1.95
With single RO4350 sample
4.9
−42
188
0.5
With double RO4350 samples
4.7
−51
276
1.8
0.82
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4 Band-Stop Filter Sensor Based on SIW Cavity for the Non-invasive Measuring of Blood Glucose 4.1 Abstract In present conditions of world and the prevalence of coronavirus disease (COVID19), and the dangers that threaten diabetics more than normal people, consideration and monitoring of glucose levels non-destructively in diabetics is felt more than ever. Hence, design and realization of a substrate integrated waveguide (SIW) planar sensor is described for the non-invasive monitoring of blood glucose concentration (BGC). The structure of the presented sensor is similar to a conventional band-stop filter and it is realized by using a modified split ring resonator (SRR) in the central section of the SIW cavity. The slots and interdigital arms on the upper conductor of the SIW cavity are utilized to produce a substantial and localized field enhancement in the sensing region by the SIW technology. Further, the fingertip is used as materials under test and its displacement and fingerprints effects are studied. The fingertips with various glucose values are modelled according to the reported information by Turgul and Kale [11, 12]. Subsequently, these models are placed on the sensing area of the introduced resonator in order to evaluate the performance of the proposed sensor for non-invasive BGC monitoring application. The introduced sensor is then fabricated and measured. The evaluated results indicate that the developed sensor features such as sensitivity, effect of finger placement, and influence of fingerprints have been improved in both the fingertip positioning and fingerprints effects compared to the other works. Also, the resonance frequency shift of the proposed sensor observe that the valuable enhancement of non-invasive BGC detection sensitivity is much more than the previous study.
4.2 Introduction For a healthy person, blood glucose should be in the normal range. High blood glucose (hyperglycemia) or low blood glucose (hypoglycemia) is dangerous (Fig. 16). Hypoglycemia can make you weak or even lead to loss of sobriety. On the other hand, hyperglycemia in your blood can also be an emergency or may lead to complications of diabetes. Diabetes is a chronic disease that occurs when the body is unable to produce enough insulin or is unable to use the insulin produced effectively. The disease affects many vital organs such as the eyes, kidneys and heart. Therefore, frequent monitoring of blood glucose is fundamental part of diabetes management. Lifestyle changes and a healthy diabetic diet are the only treatment, as it is not permanently curable. In the current state of the world, COVID-19 is a threat for the health of the general public. Older people and people with chronic medical conditions, such as diabetes, appear to be more vulnerable to COVID-19 virus. We all know that when the coronavirus virus spreads (COVID-19), we should stay at home as much
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Fig. 16 Different states of blood glucose levels in blood vessels
as possible and not leave the house. This law also applies to patients with diabetes. These patients must abide much more this rule. In fact, people with diabetes need to stay at home and use a kind of smart home health care system for their treatment (Fig. 17).
Fig. 17 Necessary actions to save live in present conditions of world
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These smart systems allow the patient to use a mobile medical device to perform routine tests and send test information to a real-time health care center. The most common way of diagnose blood glucose for diabetics is through a glucometer, in which a blood sample is taken by stimulating the fingertip and then it is analyzed. At present, these devices remain as the most popular for consumers due to their portability, and their clinical validity has been proven. However, frequent monitoring of blood glucose based on this painful invasive process can be frustrating for the patient. Because it uses lancet devices to stimulate the fingertips to extract blood. And these invasive approaches, such as laboratory and one touch glucometer, increase the risk of blood related infections. In addition, diabetics must bear the cost of tapes and the boredom to perform repeated measurements. To overcome this distress, a non-invasive patient friendly device is required. In the last few decades, many efforts have been made to develop non-invasive blood glucose concentration monitoring devices. But on the other hand, many presented technologies based on non-invasive have not been accurate enough, have not been able to work for a long time, and they have not reached the stage of wide commercialization. Non-invasive blood glucose concentration monitoring devices are recommended by research groups and companies with the aim of providing a simple, cost-effective, painless and convenient device for measuring glucose levels continuously and for smart home healthcare devices. Some technologies include optical, transdermal techniques, thermal spectrum measurement, breath acetone analysis, impedance spectroscopy, saliva analysis, graphene-based nano-sensors, electrochemical methods that measure glucose level in urine, sweat and interstitial fluid (ISF), contact lenses, acoustic spectroscopy, Raman spectroscopy or a combination of these techniques have been proposed for non-invasive glucose monitoring, and also some have even reached the commercialization stage. Another realized technology is the continuous measurement and control of non-invasive blood glucose using electromagnetic waves due to its ability to penetrate body tissues. These types of systems rely mainly on changes in the permeability (μ) and permittivity (ε) of tissues or target cells. And they allow the user to test their glucose levels without daily prick of their finger. Because changes in the concentration of glucose lead to changes in the electromagnetic parameters of ISF under the skin, saliva, tears, sweat, urine and blood in the vessels, and so on. Many studies have consistently suggested promising results and various methods for measuring the electromagnetic properties of blood glucose in tissues. For example, split ring resonators (SRR) and complementary split ring resonators (CSRR), antennas and filters, transmission lines and coaxial, implantable devices, and more can be mentioned.
4.3 Sensor Design The effective technique for the design of microwave band-stop sensor (BSS) is utilizing the adjacent resonators, which are excited by the electric coupling or direct feeding as illustrated in Fig. 18a and b, respectively. For these planar sensors, a low
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Fig. 18 Microwave BSSs a conventional with electric coupling, b conventional with direct feeding and c proposed sensor structure
Q-factor (Q < 30) was attained. The main advantage of direct feed BSS (DF-BSS) in comparison with the coupled excited ones is that their resonance is mainly related to capacitances and inductances in the sensing region. Therefore, the DF-BSS shows more sensitivity when the sample under test (SUT) is displaced or located on the sensing area. Also, employing the SIW cavity in a resonator section of BSS leads to a higher Q-factor. The most significant property of a microwave resonator sensor for BGC monitoring is sensitivity and compact size. Hence, the SIW-based DF-BSS can provide high promise for BGC sensing. In this research, the proposed BGC sensor is a band-stop configuration based on the SIW cavity which directly fed by a tapered microstrip line (ML), as depicted in Fig. 18c. To create a planar sensing region, a hexagon slot is etched on the top surface of the SIW cavity and a modified SRR is directly connected to the edge of the slot. Traditionally, in SIW cavity, the resonance characteristics strongly depend on the electric field and magnetic field distributions [13]. Furthermore, to concentrate the electric field on the presented sensing spot, the curved slots are inserted into the top plane of SIW cavity, which exhibits strong field confinement that the results in the deeper resonance can be achievable. By the proposed SRR, the electric field coupling is realized for designing the BGC sensor. The investigated SRR includes the meandered rings and open stubs can produce the extended length and more split gaps in small size compared with the conventional SRR. So, the proposed SRR can considerably increase the electric field intensity at specific areas in the close proximity of the sensing region, which allows more interaction between the SUT and the developed sensor and enhances the sensitivity. The equivalent circuit model of the proposed SRR is indicated in Fig. 19. It is derived based on the circuit models presented in [14].
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Fig. 19 Equivalent circuit model a introduced SRR and b circuit model for proposed sensor
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Fig. 20 Finger tissue model and its effect on sensor performance
4.4 Description of Sensor Performance During Loading The performance of the proposed sensor is based on the measured transmission coefficient of the designed structure. When the user’s fingertip is placed at the sensing point, according to the principle of the perturbation, the electromagnetic field distribution disturbs in the surface and inside of the substrate, and the resonance frequency and amplitude of the sensor vary depending on the changes amount in the electromagnetic parameters of the fingertip which is due to the change in glucose levels. From this change in resonance, it can be deduced that the user’s glucose level has changed. The finger tissue model is depicted in the Fig. 20. As one can see from the figure, glucose is present in both the blood vessels and the ISF; and the change of glucose levels in these two parts and their interaction with electromagnetic waves that penetrated into the skin and the resonance frequency change of the sensor leads us to control of blood glucose levels of the user.
4.5 Investigating Environmental and Human Conditions Effective on Results at the Time of Testing In some previous researches has been demonstrated that fingertip is a good choice for determining blood glucose levels, but non-invasive blood glucose monitoring by resonant sensors is unreliable at microwave frequencies and millimeter waves in this way. They believe that the accuracy of the device and the results are highly dependent on the parameters of physical and chemical properties such as (1) Blood pressure, (2)
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Fig. 21 Comparison between invasive (using a glucometer) and non-invasive (using the proposed glucose sensor)
Body temperature of individuals and the environment, (3) Unwanted electromagnetic radiations from the environment that influence sensor performance, (4) Thickness of the skin, (5) The pressure applied by the fingertip and the position of the fingertip on the sensor, (6) The fingertip arrangement, (7) The sweat and pollutions of the fingertip, and (8) The time of the last meal that the user has eaten. In references [15, 16], it was concluded that if a high field and energy can be concentrated in the whole sensing site, the errors that occur will be largely prevented, which in turn will increase the sensitivity of the sensor. Other cases are also mentioned that should be taken into account when tests performed, it must be first requested from volunteers before the test and six hours must have been passed from their last meal. Before beginning the test process, each volunteer was given about 15 min to rest until their bodies be reached steady state, then their body temperature and blood pressure were taken by a medical staff. Furthermore, each of them was asked to wash their hands to remove any pollution, and finally they were tested at room temperature of 25 °C. Figure 21 shows a comparison between invasive (using a glucometer) and non-invasive (using the proposed glucose sensor) methods.
4.6 Results and Comparison As shown in Fig. 22, the BGC sensor described in Sect. 4.3 is prototyped and measured to verify the designed configuration. The substrate is Rogers RO4003 with relative permittivity = 3.55 and thickness = 0.508 mm. Dimensions of the fabricated sensor are reported in Table 6.
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Fig. 22 Fabricated sensor a top view and b bottom view
Table 6 Detail parameters of the proposed sensor (in millimeter) Substrate
Focusing slot
ML to SIW transition
Proposed SRR
WS
40
dvia
0.65
WF
1.1
L1
4
L7
4.1
LS
30
Svia
1.3
WT1
2.8
L2
1.2
L8
0.6
hS
0.5
SS
1
WT2
2
L3
5
W1
4
rC
9.5
ST
0.1
L4
1
W2
0.5
rS
6
LT
3
L5
1.6
S
0.4
L6
3.1
The effects of the SIW cavity, the hexagon slot with the modified SRR and the focusing slots in the proposed sensor performance are studied using the ANSYS high frequency structure simulator (HFSS) and demonstrated in Fig. 23. As indicated in Fig. 23, resonance value is improved when the curved slots are utilized in the proposed structure due to the enhancement of field confinement at sensing place. Also, the measured result for the bare test is plotted in Fig. 23, and a good agreement is detected between the measured and simulated results. Further, the electric field distribution of the proposed sensor is depicted in Fig. 24. To calculate this distribution in the sensing region of the proposed sensor, a threedimensional finite element method is accomplished by ANSYS HFSS. As can be seen from Fig. 24, employing the curved slots has a significant influence since the electric field is more concentrated in the SIW cavity center. So, upon loading, the interaction between the electric field and SUT will be enhanced. When the resonance transmission coefficient is used for permittivity sensing, the Q-factor of the sensor can be obtained from (3) and it can be reached by the formula (3). As can be seen in Fig. 23, f0 is equal to 5.8 GHz and f is about 45 MHz. So, a proper unloaded quality factor (Q ≈ 130) is attained for the proposed sensor. To peruse the validity of this structure as a sensor, it is needed to have some information about the relation between the dielectric coefficient of blood and its glucose concentration.
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Fig. 23 Simulation and measurement results of the designed sensor in the empty case
Fig. 24 Effect of sensor components on electric field distribution a SIW cavity, b hexagon slot and c curved focusing slots
This affiliation is derived from [17]. In [17], it was shown that the permittivity of blood decreases as the glucose concentration in the blood increases. Alteration of glucose concentration in the blood causes a shift in the resonance frequency of the band-stop filter. In this research, a fingertip is modelled based on the configuration reported by Turgul and Kale [11, 12], as illustrated in Fig. 25. The model is then simulated using the ANSYS HFSS software. The overall model size is 4 mm × 5 mm × 10.5 mm. Considering four values of BGC, 105, 255, 400 and 500 mg/dl, this model is placed on the introduced SRR as the SUT and the resonance frequency is shifted to 5.36, 5.395, 5.432 and 5.455 GHz, respectively, as illustrated in Fig. 26a. The resonance shift between the BGC values is about 95 MHz and it is significantly larger than the reported value in [11]. This is due to the proposed SRR that the electric field penetrates in a small area which results in more
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Fig. 25 Fingertip model a bottom view and b side view (All dimensions are in millimeter)
Fig. 26 Performance of the proposed sensor a for BGC changes and fingerprint influence and b SUT placement effect on the resonance frequency shift
local interaction with SUT. Further, to indicate the sensing accuracy of the proposed sensor, a simplified model of the fingerprint is etched on the skin layer of four utilized fingertip models, as depicted in Fig. 25. In all models, the relevant resonance shifts are 270
IEEE Sensors J., 2015
IEEE Sensors J., 2014
>270
200
Sensors Actuators A: Physical, 2013
Microw. Opt. Tech. Lett., 2012
625
>270
Size (mm × Published in mm)
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2.27
2
6
0.975
4.62
4.1
0.58
3.45
4
1.51
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
–
–
–
–
–
–
–
–
3.32
–
–
0.6
0.6
0.16
0.4
0.08
0.01
0.17
0.008
0. 15
0.012
0.95
CH1
2.47
Sensitivity (%)
CH1
CH2
Frequency (GHz)
[33]
References
Table 12 (continued)
–
–
–
–
–
–
–
–
0.1
–
–
CH2
10
22
5
1
3
0.8
2
0.45
2
0.27
23
CH1
–
–
–
–
–
–
–
–
3
–
–
CH2
FDR (MHz)
100
25
35
70
40
230
30
50
30
487
50
CH1
Q-factor
–
–
–
–
–
–
–
–
30
–
–
CH2
No
No
No
No
No
No
No
No
No
No
No
DLSDD
Sensors, 2017 Sensors, 2017 IEEE Sensors J., 2017
>270 >270 >270
Modern Physics Lett. B, 2018
>270
900
(continued)
Applied Physics A, 2018
J. Electromag. Waves Applications, 2019
J Sensors and Sensor Systems, 2018
>270
324
J. Electrochemical Soc., 2017
625
J. Electrochemical Soc., 2017
IEEE Microw. Wirel. Compon. Lett, 2017
>270
875
J. Applied Physics, 2017
>270
Size (mm × Published in mm)
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5.76
0.96
2.188
5.81
8.26
5.26
2.564
2.3625
2.03
2.5
9.25
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
–
–
–
–
–
–
–
–
–
–
–
–
0.07
0.27
0.026
0.02
0.15
0.1
0.04
0.14
0.5
0.13
0.08
0.1
CH1
2.52
Sensitivity (%)
CH1
CH2
Frequency (GHz)
[44]
References
Table 12 (continued)
–
–
–
–
–
–
–
–
–
–
–
–
CH2
6
9
1
1
3.8
5
4
8
8
1
5
1
CH1
–
–
–
–
–
–
–
–
–
–
–
–
CH2
FDR (MHz)
95
55
105
50
76
1080
70
190
87
60
80
35
CH1
Q-factor
–
–
–
–
–
–
–
–
–
–
–
–
CH2
No
No
No
No
No
No
No
No
No
No
No
No
DLSDD
Sensors, 2018 Sensors, 2018
>270 >270
232
J. Electrochemical Soc., 2018 (continued)
IEEE Trans. Microw. Theory Techn., 2018
Sensors, 2018
>270
>270
Sensors, 2018
>270
IEEE Trans. Instrum. Meas., 2019
Sensors, 2018
>270
>270
Sensors Actuators A, 2018
>270
IEEE Sensors J., 2018
IEEE Microw. Wirel. Compon. Lett., 2018
>270
560
IEEE Microw. Wirel. Compon. Lett., 2018
>270
Size (mm × Published in mm)
192 S. Kiani et al.
0.1342
2.52
4.34
4.4
6.83
0.33
2.45
1.95
5.76
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
Proposed sensor
DLSDD Dual of Liquid SDD
2.4
[57]
7.85
–
5.8
–
8.27
–
–
–
–
–
–
0.28
0.2
0.17
0.5
0.05
0.04
0.04
0.46
0.57
0.5
0.04
CH1
4.3392
Sensitivity (%)
CH1
CH2
Frequency (GHz)
[56]
References
Table 12 (continued)
0.3
–
0.07
–
0.04
–
–
–
–
–
–
CH2
16
6
4
1.6
3
1.93
1.7
12
0.76
11
1.86
CH1
22
–
3
–
4
–
–
–
–
–
–
CH2
FDR (MHz)
280
50
120
100
42
400
46
44
47
40
400
CH1
Q-factor
110
–
100
–
40
–
–
–
–
–
–
CH2
Yes
No
No
No
Yes
No
No
No
No
No
No
DLSDD
IEEE Sensors J., 2019 Scientific Reports, 2019
>270 >270
270
800
240
1500
Measurement, 2020
Sensors, 2020
J. Electron. Mater., 2020
IEEE Sensors J., 2019
Scientific Reports, 2018
IEEE Trans. Antennas Propag., 2019
>270
360
Sensors, 2019
Sensors, 2019
Int. J. RF Microw. Computer-Aided Eng., 2019
1000
750
>270
Size (mm × Published in mm)
An Overview of Interdigitated Microwave Resonance Sensors … 193
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S. Kiani et al.
Table 13 Value of parameters for samples Samples
Frequency (GHz)
Resonance value (dB)
Q-factor
CH1
CH2
CH1
CH2
CH1
Ethanol
5.65
7.56
−15
−20
Methanol
5.52
7.15
−12
−20
Glucose
5.10
6.65
−12
DI water
4.80
6.35
−15
Error CH2
CH1
CH2
75
61
0.52
1.14
40
55
1.04
0.88
−17
43
45
0.34
0.25
−20
40
43
1.04
0.63
Eq. (4). The error of the proposed sensor for two channels are depicted in Table 13. Application of the presented sensor is high in variety of industries. Measuring blood glucose concentrations based on interactions of electromagnetic fields with biological tissues is one of its applications in the medical industry. Perhaps the proposed sensor can be used in sensing pH or glucose in biological material such tear, saliva and sputum, therefore such topics can be considered for future work.
6 Conclusion Finally, a review of several techniques is reported for implementing planar microwave resonant sensors in this chapter. According to studies conducted, in designing a resonant sensor, according to the principle of their operation, namely the resonant frequency variation at the time of presence of the sample under test, there are several main purposes which must be achieved. These aims are: (1) It must be easily integrated with other parts of microwave and electric circuits (2) It ought to be highly sensitive to small volume of sample. In other words, the quality factor of the sensor should be as large as possible and there should be high concentrated field in the sensing area. (3) Be compact, and (4) It should be possessed easy and low cost fabrication. Acknowledgements In this section, authors must first mention two eminent professors of telecommunications (Prof. Mojgan Daneshmand and Prof. Pedram Mousavi) who are no longer with us; and we are very grateful for their achievements and scientific services [66, 67]. Also, we appreciate the Semnan University, which supported us in conducting research.
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IDC Planar RF Sensors for Dielectric Testing and Applications M Jaleel Akhtar, Nilesh K Tiwari, and Greeshmaja Govind
Abstract In recent years, the design and implementation of various types of sensors in the radio frequency (RF) and microwave frequency region for material characterization and testing has gained a lot of attention from various researchers around the globe. The characterization and testing of dielectric materials in the RF and microwave frequency band primarily involves estimating the dielectric properties of materials in the specified frequency band for design and development of various types of modern RF devices and circuits. However, the RF dielectric testing procedure has also become quite attractive for several real-word applications apart from estimating the dielectric properties of materials due to the fact that it is basically a non-invasive and non-destructive process. The RF sensor is a generic term quite often used to represent the electronic device or the hardware, which is required to be designed and developed to facilitate the accurate testing of dielectrics in the RF and microwave frequency regime. In the earlier days, the conventional RF sensors were primarily based on the metallic waveguide or the coaxial line structures. The metallic waveguides or the coaxial lines are basically non-planar bulky structures, employed in the past to design various RF circuit components and devices. However, in modern times, these non-planar structures are mostly replaced with the planar configurations in order to realize the compact RF devices and components. It is mainly due to this reason that the planar RF sensor has emerged as the viable alternative to the conventional waveguide and coaxial sensors for the characterization and testing of dielectric materials in the specified frequency range. The planar RF sensors offer small size, lightweight, compact design, and ease of integration with other RF circuits based on the planar technology. Now, as mentioned earlier, apart from the direct applications of material testing, the planar RF sensors are now also being employed for certain indirect applications in the food, agricultural and biomedical industries. For these industries, the major application emerging in recent years has been to detect the quality of various types of edible and medical products. It appears that in order to achieve accurate dielectric testing and to successfully realize various types of indirect industrial applications mentioned above, the sensitivity of M. J. Akhtar (B) · N. K. Tiwari · G. Govind Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_8
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the designed planar sensor should be reasonably high. As a matter of fact, the sensor with higher sensitivity is most suited to detect any type of adulteration in the edible or the medical grade product. In the last few decades, it has emerged that the planar RF sensors employing the concept of electrically small structures have reasonably higher sensitivity, thus being well suited to accurately estimate the complex permittivity of materials. These electrically small configurations are usually realized using the engineered planar structures in order to achieve excellent sensitivity due to the concentrated electric field, which are becoming quite popular in recent years for direct application in the RF industry to perform the dielectric testing of materials and media. The split ring resonator (SRR), the complementary split ring resonator (CSRR), and the interdigital capacitor (IDC) structures may be considered as a few of the basic engineered structures for these types of applications. However, the IDC structure is found to be more appropriate for certain dielectric testing applications than that of the CSRR and SRR due to its relatively high sensitivity and the overall compact size, as it can directly be etched on the main signal line, thus providing quite high sensitivity. This chapter is mainly focused on the IDC based planar RF sensor and its implementation for various dielectric testing applications. A detailed analysis, including the theoretical description involving the quasi static model and the electromagnetic model of a typical IDC based sensor structure, along with the associated dielectric sensing mechanism, is provided. Both the resonant and the nonresonant variants of the IDC structure including their working principle relevant to the dielectric sensing mechanism are discussed in detail. Finally, the use of the planar IDC RF sensors for various industrial, environmental, and biomedical applications based on their design configurations are discussed.
1 Introduction The dielectric testing in the RF microwave frequency region mainly involves the estimation of the complex permittivity of the test specimen in terms of the measured parameters. In the recent past, several methods have been proposed for the dielectric testing of materials depending on the requirement of various factors such as the frequency range, the desired accuracy, availability of sample volume, the sensitivity etc. In the most general sense, the dielectric testing in the RF and microwave frequency region may be divided into two categories, i.e., the resonant technique and the non-resonant technique. The non-resonant technique is usually employed for the wideband dielectric testing of materials using the measured scattering parameters with moderate accuracy. On the other hand, the resonant technique mainly employs the narrowband measurement but with improved accuracy. Recently, the use of the resonant technique has also been explored for the multi-band dielectric testing of materials in the RF and microwave frequency band. Both the resonant and non-resonant methods usually employ some hardware widely known as the sensor structure for the sample placement, in order to facilitate the measurement of required set of scattering parameters in the specified frequency band. The involved
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sensor structures may be broadly classified into two categories viz. the non-planar and the planar sensor structures. The use of planar sensor structures has substantially increased over the non-planar counterparts in recent years, due to their compact size and ease of integration with the modern RF circuits. The dielectric testing using the non-resonant planar sensors primarily employs the microstrip line, the coplanar waveguide (CPW), the substrate integrated waveguide (SIW) based structures. On the contrary, the resonant dielectric testing using the planar sensors can be carried out using the simple planar cavity and associated resonators. It is worth mentioning that the sensitivity of the planar resonant sensor structures is usually better as compared to the non-resonant structures. However, it is required to be further improved for a few specific dielectric testing applications where the sensitivity becomes quite crucial. More specifically, the RF sensors for various industrial, humanitarian, and biomedical applications require substantially higher value of sensitivity in order to identify the purity or concentration of the virgin sample in the presence of even small contamination. It is to be noted that the mischievous practice of contaminating the virgin fluid with some cheap adulterant is quite common, especially in the developing world today, which costs many human lives. As a matter of fact, the quality monitoring agencies are continuously exploring novel mechanisms and methods in order to detect and identify possible contamination in various types of edible and biomedical fluids. Nevertheless, in a real scenario, adulteration detection is not an easy task due to quite close similarity between the adulterant and virgin fluids. Moreover, the concentration of the adulterant is usually kept at such a small level that it cannot easily be identified. The situation becomes more complicated concerning the packaged food industries, where only some sort of non-invasive sensing mechanism can be employed. Additionally, for specific biomedical applications where the available sample volume remains quite small, it becomes extremely difficult to ascertain the quality of the medical grade product using conventional methods. For these types of applications, the RF sensors have recently been explored as different samples, including the reference liquid and the adulterant, possess different dielectric properties in the specified frequency range. Additionally, in the RF and microwave frequency range, the overall dielectric testing procedure is totally non-invasive, and appropriate compact planar RF sensors may be designed to facilitate the measurement wirelessly. Therefore, it can be said that the design of planar non-invasive RF sensor structures with improved sensitivity may help to ascertain the quality of various medical grade liquids. It has recently been demonstrated that the integration of some engineered structure to a planar transmission line helps to attain the relatively improved sensitivity with an overall compact sensor topology. The improved sensitivity of these engineered structures based sensing elements may primarily be attributed to the enhanced electric field localization in the sensing region. For these types of applications, three basic types of sensing elements viz., the SRR (split ring resonator), the CSRR (complementary split ring resonator), and the IDC (interdigital capacitor) structures have mainly been utilized in the literature, depending on the specific usage. For example, the CSRR elements show relatively higher sensitivity for dielectrics than that of the
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SRR elements. On the contrary, the SRR elements help to design the dielectric sensors with relatively improved resolution than that of the CSRR elements. Nonetheless, both the CSRR and the SRR sensing elements are usually excited using coupling from the main signal line, i.e., the sensing structures are designed in proximity coupling with the main transmission line. This type of indirect coupling of the sensing elements somewhat reduces their sensitivity depending on the actual coupling coefficient and their positions relative to the transmission line. On the other hand, the IDC structures can directly be etched on the main transmission line, which certainly helps to attain improved sensitivity due to the enhanced electric field of the main line. It is mainly due to this reason that various industrial applications have been realized using the IDC sensor structures in the recent past. In this chapter, both the non-resonant and resonant topologies of the IDC structures are described, and their usage for various industrial and the microfluidic biomedical applications are discussed.
2 Basic Theory and Working Principle The planar interdigital capacitor may be viewed as the modified configuration evolved from the conventional parallel plate capacitor as depicted in Fig. 1 [1, 2]. From this figure, it can be visualized that the simple IDC structure may be realized by arranging both the metallic electrodes of the conventional capacitor on a single side. It can also be observed from this figure that the electric field originated from the signal/positive electrode and terminated on the ground/negative electrode results in the formation of the simple IDC structure with the field hump along the path. This type of uniplanar IDC structure with bulging of the field on its top can effectively be utilized to realize the enhanced interaction of the electric field with the material under test (MUT), loaded on the top of the structure [1, 2]. The strength of the electric field in the given area can be further enhanced by introducing more number of metallic electrode patterns, as shown in Fig. 2, which basically represents a typical IDC structure.
Fig. 1 A fringing field dielectric sensor as: a a parallel-plate capacitor, double sided access to MUT, b the corresponding IDC topology, one-sided access to the MUT
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Fig. 2 A typical geometrical structure of the MUT loaded conventional planar IDC
From Figs. 1 and 2, it can be ascertained that the pair of electrodes are mainly used here to realize the capacitance, thereby producing the electric field in the region in order to facilitate the enhanced interaction of the IDC structure with the MUT [1, 2]. The interaction of the electric field with the material loaded on the IDC structure certainly modifies the distribution of the electric field as compared to its unperturbed state, i.e., when the IDC is not loaded with the material. This disturbance in the unperturbed electric field basically modifies various parameters under investigation such as the capacitance, the impedance, etc. The change in values of parameters under observation can then be related to the dielectric properties of the loaded sample at the specified frequency. It basically means that the planar IDC structure can conveniently be employed for the realization of a compact dielectric sensor over the desired frequency range. It is mainly due to this reason that in the recent past, various RF sensor topologies have been realized using the conventional/modified IDC structures with their implementation on the planar transmission lines. The RF sensing mechanism usually involves the recording of change in the measured scattering parameters corresponding to a change in the dielectric properties expressed by the dielectric constant and the loss tangent of the specimen at the specified frequency range. The test material possessing certain dielectric properties at the specific frequency point basically governs the RF/microwave response of materials. Thus, the dielectric properties of test specimen helps to understand its actual behaviour in response to the electromagnetic waves. It basically means that each dielectric test specimen appropriately modifies the incident EM wave properties represented in terms of the scattering parameters. Hence, one can retrieve the dielectric properties of specimens in terms of the corresponding measured scattering data by performing its careful inverse processing. The dielectric testing mechanism using the RF sensors, including the IDC inspired structure, can be understood using either with the lumped circuit model or with the electromagnetic wave approach. For a better understanding of the actual RF sensing mechanism using the IDC structure, a quick overview of the quasi-static/lumped equivalent model and the electromagnetic analysis approach is provided here.
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2.1 Quasi-Static Analysis From the simple quasi-static point of view, the IDC structure may be considered as the equivalent capacitance between the two patterned electrodes separated with a finite distance. Here, it is to be noted that depending on the actual configuration, the IDC structure may also be modelled as the combination of the resistance-capacitanceinductance. The inductance of the IDC structure may be attributed to the associated metallic part, while the finite resistance depicts the loss associated with the structures. In this section, several typical examples of the IDC structures represented as lumped capacitors to facilitate sensing of dielectric materials are described. Figure 3 shows a typical IDC structure with the sample loaded on top of it, and its corresponding lumped equivalent model [1, 2]. From this Figure, it may be visualized that the effective capacitance of the structure will be modified once it is loaded with the material under test due to the change in the effective dielectric constant of the medium between two electrodes, 1, 2, leading to the capacitance (C 12 ). Further, if we approximate the C 12 as a parallel plate capacitor with finite fringing field then it may be written as function of material dielelctric constant [1, 2] C12 (CIDC ) ≡ f (εrMUT ) ≈ ε0 εrMUT
A d
(1)
where, d corresponds to the inter-electrode distance, and A represents an effective cross-sectional electrode area and ε0 , εr have their usual meaning. Now, it becomes quite evident that any change in the dielectric constant of MUT accordingly reflects the changes in the measured capacitance parameter. Here, it is worth mentioning that a change in the IDC capacitance can identically be related with the equivalent change in the measured parameters, i.e., the impedance/admittance (zm /ym ) and the propagation constant (γm ) as [3] Fig. 3 A typical arrangement of the MUT loaded IDC sensor
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Fig. 4 A typical interdigitated electrode: a configuration of the cell, b simplified equivalent circuit. Source [4] M. R. R. Khan, and SW Kang, Sensors: MDPI, vol. 15, 2015, pp. 13201–13221 © 2015 CC
(R + jωL)(G + jωC) IDC zm ≡ 1/ym = (R + jωL)/(G + jωC) γm =
IDC
(2)
From (1), (2), it can be followed that a change in any of the measured parameters such as the impedance/admittance, the propagation constant, etc., can be used to estimate the dielectric property of the material under investigation. Similarly, the RF sensing mechanism can be realized using other variants of the IDC structure by observing a change in the measured capacitance corresponding to a change in dielectric properties of the MUT. For example, Fig. 4 shows a typical configuration of the IDC structure along with its approximated equivalent lumped equivalent circuit model [4], which can be employed for the RF dielectric sensing. Here, the direct capacitive coupling between the two electrodes is modelled by the cell capacitance C Cell , whereas the layered capacitor represented by two doublelayered capacitances C DL is connected in series with the resistance of the MUT solution (RSol ). The total series resistance of the connecting wires is represented here using the lead resistance RLead . The cell capacitance (C Cell ), in the present situation, can approximately be related with the dielectric constant of the medium (material under test) as Ccell = ε0 εrSol /Kcell , with Kcell being the constant representing the geometry of the cell. From the given equivalent circuit, it may again be postulated that any change in the dielectric constant of the medium between the excitation and sensing electrodes changes the associated capacitance of the IDC structure [4]. Similarly, the working principle of other planar IDC based sensors, coupled to CPW, can also be analyzed using a quasi-static approach conforming to their equivalent lumped circuit model. For example, the measured value of capacitance corresponding to the MUT loaded configurations has been employed to effectively observe the dielectric properties of various biological grade liquids [5], [6]. The CPW fed IDC sensor topology can be realized with either the two port configuration [5], or one port configuration [6]. A typical single port IDC based sensor structure, as shown in Fig. 5, can equivalently be modelled as a combination of the conductance and the
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Fig. 5 Typical schematic of CPW fed one port IDC sensor configuration
capacitance [6]. Thus, the approximate equivalent impedance of the sensing region in the present situation may be expressed as [6] ZIDC = 1/(GS + jωCS ) ≡ Z0
1 + S11 1 − S11
(3)
Here, S11 represents the measured reflection coefficient of the sensing region loaded with the MUT. The measured reflection coefficient in the present situation provides the conductance (GS ) and capacitance (C S ) of the sensing region, which will be the function of the dielectric permittivity of the loaded sample [6]. From the above-described examples, it can easily be ascertained that the IDC based planar structures, usually modelled as lumped capacitors, may be employed for RF dielectric sensing either with one port or two port topologies over the desired frequency range. It is also to be noted that most of these IDC sensor structures employed for the dielectric property estimation of the material under test over the broad frequency range have quite compact topologies. However, inclusion of an appropriate inductance along with the IDC structure helps to realize the resonant sensor structure, which may be used for quite accurate dielectric sensing over a narrow frequency band. Under these situations, the overall structure may be viewed as the resonant IDC sensor topology having dedicated resonant frequency, governed by the actual value of various geometrical parameters. The resonance phenomenon associated with these structures basically helps to attain quite strong localized electric field in the sensing region at the corresponding resonant frequency, which eventually leads to improved dielectric sensing due to substantially higher material-field interaction. A typical IDC sensor topology making use of a spiral inductive arrangement is shown in Fig. 6 [3], where it can be observed that the IDC structure, in this case, is embedded inside the spiral inductive element. The overall resonant frequency frsens of the sensor shown in Fig. 6 can be estimated using the equivalent inductance and capacitance shown in the figure, which can be given as [3]
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Fig. 6 Resonant IDC inspired label-free biosensor a 3D layout of the resonator using an interdigital capacitor and intertwined spiral inductor, and the equivalent circuit in terms of R, L, C and G, b image of the resonator surface bearing the glucose sample, c SEM image of the IDC and schematic image of the glucose sample using water and glucose molecules, d enlarged schematic view of a portion of the IDC including the equivalent circuit along with the different layers of the IPD fabrication process of the resonator and the equivalent admittance of capacitor (YIDC ). Source [3] N. Kim, K. Adhikari, R. Dhakal, et al., Scientific Reports, vol. 5, No. 7807, 2015, © 2015 CC
frsens
= 2π LC IDC 1 √
(4)
An equivalent circuit shown in this figure comprises various circuit elements where R represents the total resistive loss associated with the spiral inductor having inductance (L), C represents the effective capacitance of the IDC, and G shows the equivalent leakage conductance (G). In these types of IDC resonant sensor structures, the resonant frequency changes with a change in the equivalent IDC capacitance which depends on the dielectric constant of the MUT [3]. It implies that the dielectric constant of the MUT can be estimated using the resonant IDC structure by recording a relative change in the resonant frequency. Here it is to be noted that the capacitance of the IDC structure can be related to the dielectric constant of the MUT using the relationship provided in (1). Apart from the resonant frequency parameter, the change in admittance of the IDC cell can also be used as the additional parameter to estimate the permittivity of the test specimen, as shown in Fig. 6 [3]. There are some other variants of the resonant IDC RF sensor structures presented in the literature to estimate the dielectric constant of the test specimen by measuring the resonant frequency under different loading conditions. The CPW fed IDC-like resonator and its corresponding equivalent circuit are provided systematically in the work reported by Zhu et al. [7]. Recently, the modified CPW fed resonant IDC-like structure has been reported for dielectric testing [8]. The actual resonator structure and its approximate equivalent resonant circuit model are shown in Fig. 7 [7, 9, 10]. This resonator can also be viewed as the combination of the open and short stubs, etched on the CPW line [11].
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Fig. 7 IDC-like resonant sensor, a CPW fed resonator with modified series stubs, b an approximate equivalent circuit model. Source [11] © 2015 IEEE
In Fig. 7a, the width of the signal line is represented by s, and the spacing between the signal and ground line is shown with the symbol w. The approximated equivalent circuit contains various circuit elements corresponding to the combination of open and short stub etched on the CPW line [11]. Here, the capacitances C 1 , C 2 represent the equivalent IDC-like resonator capacitances, mainly responsible for the dielectric sensing, and L 1 , L 2 , R represent the associated inductance and resistance with C g as the static device capacitance. The IDC inspired resonator capacitance (CIDC ≡ f (C1 , C2 )) and the resonator inductances (LIDC ≡ f (L1 , L2 )) are mainly responsible for generating the resonant frequency as per the relationship provided in (4), with CIDC depending on the MUT dielectric property as per relationship (1).
2.2 Equivalent Electromagnetic Field Analysis In the previous subsection, the equivalent lumped circuit approach was mainly utilized to qualitatively explain the RF dielectric sensing mechanism of the IDC structure. This subsection will mainly focus on the electromagnetic field analysis approach to qualitatively explain the RF dielectric sensing mechanism of IDC structures, which is quite important for the high frequency measurement. For this type of analysis, let us consider the electric field lines between the positive/signal and ground/receiving electrode of the IDC structure, as shown in Fig. 8 [4]. Now, if the MUT is loaded on top of the IDC structure, then the induced field of the IDC structure starts to interact with the MUT, as shown in Fig. 8. This interaction basically modifies the strength of the received electric field on the receiving end of the IDC structure as compared to that of the unloaded condition. In the RF and microwave frequency range, it is more convenient to measure the electromagnetic field strength in terms of the scattering parameters rather than expressing it in terms of the traditional voltage-current, inductance/capacitance parameters. These kinds of RF measurements are usually performed using the vector network analyzer (VNA) which can record the complex scattering parameter (S-parameters) corresponding to
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Fig. 8 Electric field of the coplanar IDC structure. Source [4] M. R. R. Khan, and SW Kang, Sensors: MDPI, vol. 15, 2015, pp. 13201–13221 © 2015 CC
the device under test with its exposure to RF source. Here, one should always keep in mind that even though the S-parameters are better suited for the RF measurement, the overall mathematical formulation of the multi-layered structures is not quite straight forward due to the involved reflection/transmission wave parameters. Therefore, for a detailed analysis and formulation, the measured S-parameters should be converted to the corresponding transmission parameters using the well-established matrix conversion [12]. Thereafter, the derived transmission/ABCD matrix of the multi-layered structure may be transformed into the S-parameters for immediate comparison with the measured data and to estimate the dielectric properties of the test specimen. Let us consider a typical CPW coupled IDC inspired capacitive sensing section as shown in Fig. 9, where the overall structure is accordingly represented in terms of the effective propagation constant (γIDCeff ) and the effective impedance (ZIDCeff ) of the sensor section [12]. The transmission matrix, derived in terms of the measured S-parameters, corresponding to the sensor section can be related with the relevant parameters as follows [12]
S11m S12m S21m S22m
AS BS CS DS
Zeff sinh(γIDCeff lIDC ) cosh(γIDCeff lIDC ) = sinh(γIDCeff lIDC )/ZIDCeff cosh(γIDCeff lIDC )
Measured S parameters ⇒ Sensor ABCD = f (γIDCeff , ZIDCeff )
(5)
Fig. 9 A typical schematic of CPW fed IDC based sensor topology and its equivalent transmission line model
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where, γIDCeff , and ZIDCeff can usually be related with the effective dielectric properties of the sensing region (6). ZIDCeff =
μ0 √ , γIDCeff = μ0 εIDCeff εIDCeff
(6)
From relationships (5) and (6), one can easily interpret that the change in effective dielectric constant over the sensing region changes the measured Sparameters accordingly. It basically means that one can effectively estimate the dielectric properties of the test specimen over the desired frequency range based on the measured S-parameters of the sensor section loaded with the specimen. Now, in a similar way, the electromagnetic analysis approach can also be used to understand the operation of the resonant IDC inspired structures where the IDC capacitance is integrated with an inductive element. These types of resonant IDClike structures mainly store the electric energy over the sensing region at the corresponding resonant frequency, as shown in Fig. 10 [11]. Therefore, when the material is loaded on the top of the sensing region, a substantial interaction between the MUT and the electric field of the sensor region takes place resulting in a slight change in the original unloaded electric energy of the resonant IDC inspired sensor. The basic working principle of these sensors can qualitatively be understood with the help of small material perturbation theory [13]. As per the small material perturbation approach, the placement of test sample over the sensing region of planar resonant
Fig. 10 CPW fed IDC-like resonant sensor comprising of modified stubs with plot of associated electric field at resonant frequency. Source [11] © 2015 IEEE
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sensors perturbs the parent electric field of the unperturbed resonator. It results in a shift in the resonant frequency and Q-factor of the designed sensor as compared to its unperturbed value. This change in the resonant frequency and Q-factor of the cavity can be related to the material property of the sample under test using the relationship (7). It is important to note that the relation in (7) mainly represents the perturbation of the electrical energy when a purely dielectric test specimen is placed in the sensing region [13]. εE·E0∗ d V ω − ω0 = − Vs ω 2 Vc ε1 E·E0∗ d V
(7)
where, the parameters Vs , Vc in the above equation represent the sample and the cavity volume, respectively with ω0 , E0 and ω, E representing the value of the angular resonant frequency and electric field of the resonant IDC structure before and after loading the test specimen, respectively. The parameters ε and ε1 in the expression represent the relative change in the complex permittivity and the complex permittivity of the MUT, respectively. For many practical situations, the resonant IDC structures are used for the concentration detection of individual constituent in the given liquid solution. Under these types of scenarios, the relative change in the complex permittivity (ε) may be viewed as the difference between values of the dielectric constant corresponding to the mixture solution and that of the pure sample. The relationship (7) can then be rewritten for the negligibly small field perturbation (8) in conjunction with the standard dielectric mixing formulae (9). fS − f0 = fS
1 − εrS 2
˝ E0∗ .ES d V ˝Vs |E0 |2 d V Vc
(8)
In (8) f0 and fS represent the unloaded (without sample) and the loaded (with liquid sample) resonant frequency corresponding to the dielectric constant of test liquid εrS . The test liquid in the present situation expressed by εrS can be represented in terms of the dielectric constant of the constituent liquid 1 εrP and that of the constituent
liquid 2 εrA with the corresponding volume fraction vP , and vA , respectively, as shown in Eq. (9), using the LLL dielectric binary mixing relationship [14].
3 εrS = vP · εrP1/3 + vA · εrA1/3 , vP + vA = 1
(9)
From the relationships (7)–(9), it may be concluded that the extent of perturbation of the electric field in the vicinity of the sensing region under loaded condition would depend upon volume proportions and dielectric constants of the constituent liquid 1 and the constituent liquid 2. Hence, in principle, the resonant IDC sensor can suitably be used to test the purity level of the reference liquid (constituent liquid 2) by detecting the level of contamination of the adulterant liquid (constituent liquid
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1) in it, which is basically facilitated by observing the relative shift in the measured resonant frequency of the sensor under loaded condition. From the above discussion, it may be inferred that the dielectric sensing mechanism can suitably be realized using the IDC sensors in order to estimate dielectric properties of materials in the RF and microwave frequency range. Moreover, the overall dielectric sensing mechanism of these IDC based RF planar sensors can be explained using the quasi-static equivalent circuit approach as well as that of the electromagnetic field approach. It is mainly due to this reason that in the recent past, the planar RF sensors based on the IDC inspired structures have been implemented for various applications, including accurate estimation of dielectric properties of materials. A few practical applications of the IDC inspired RF planar sensors are provided below to demonstrate the industrial usage of these types of IDC sensors.
3 Industrial Applications of IDC Inspired RF Sensors 3.1 IDC-Based Glucose Biosensor A highly stable IDC glucose biosensor with solvatochromic-dye-containing sensing membrane with wide dynamic range and high sensitivity has recently been proposed [15]. The working principle of the dielectric sensing membrane loaded IDC glucose biosensor is primarily based on the recording of a relative change in the IDC capacitance corresponding to the change in the glucose concentration placed over the IDC sensing membrane. In other words, the dielectric property of the IDC sensing membrane gets changed in this case after its immersion in the test glucose solution which eventually changes the IDC capacitance and the phase between two electrodes. A typical experimental setup containing the IDC based glucose bio-sensing system is presented in Fig. 11 [15]. As the basic operation of the proposed IDC glucose biosensor is based on the observation of a relative change in the capacitance of the IDC sensor, hence an AC voltage is applied to produce an electric field between the two electrodes of the sensing membrane loaded IDC structure [15]. The impedance of the IDC structure changes after application of the electric field to the dielectric/sensing material of the IDC, and subsequently the dielectric constant of the sensing system also changes with a variation in the test glucose concentration. In this work, the desired liquid test solution is prepared by dissolving the glucose substances with the deionized (DI) water whereas Nile-red is employed as the IDC sensing membrane for all the demonstrated results. The proposed sensing membrane loaded IDC glucose biosensing system works on the capacitor principle, and hence, the phase difference between the reference signal and the target glucose solution gets increased with an increase in the glucose concentration, as shown in Fig. 12a. Moreover, the variation in IDC capacitance corresponding to the change in the test glucose concentration is depicted in Fig. 12b. From this Figure, it can also be noticed that the measured
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Fig. 11 A typical experimental setup: a schematic diagram of the IDC inspired glucose biosening system; b photograph of the various parts of the proposed IDC bio-sensing system; and c schematic diagram for measuring the optical properties of different sensing solutions under different concentrations. Source [15] M. R. R. Khan, A. Khalilian and SW Kang, Sensors: MDPI, vol. 18, s16020265, 2016 © 2016 CC
Fig. 12 Response of the IDC inspired sensor for different glucose concentration (M), a variation in phase shift, b variation in capacitance. Source [15] M. R. R. Khan, A. Khalilian and SW Kang, Sensors: MDPI, vol. 18, s16020265, 2016 © 2016 CC
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change in the capacitance value increases proportionally with an increase in the glucose concentrations from 1 µM to 1 M [15]. In summary, the above glucose biosensing system is based on the interdigitated capacitor (IDC) integrated with the dielectric sensing membrane which can effectively record the variation in the glucose concentration from 1 µM to 1 M with quite linear sensing response. Moreover, a typical CPW fed IDC sensor topology has also been employed for various biomedical sensing applications including the detection of living cell concentration and yeast suspension in host medium [15].
3.2 Integrated Passive Device Biosensor Using Resonant IDC Topology For detection of glucose in water-glucose solution, a passive IDC biosensor has been implemented [3]. The design of this sensor is based on the usage of an intertwined spiral inductor coupled with an interdigital capacitor, which basically helps to concentrate the electromagnetic field over the sensing region (IDC) eventually resulting in providing quite high sensitivity (199 MHz/mgmL−1 ). Therefore, this sensor configuration possesses an ultralow detection limit of 0.033 mM. The measured S-parameters, and the derived parameters, i.e., the propagation constant (γ ), impedance (Z), capacitance (C), inductance (L), resistance (R), and conductance (G), are utilized here to estimate the glucose concentration. The experimental setup along with the employed sensor in this scenario is shown in Fig. 13 [3]. The resonant IDC sensor, shown in Fig. 13, is used to detect the glucose concentration in human serum and water-based solution, where the glucose sample (5µL)
Fig. 13 Scheme for the S-parameters measurement of a typical IDC inspired resonator, a biosensing resonator connected with the VNA for the measurement of S-parameters, b enlarged view of the resonator, c FIB image of the resonator surface bearing the glucose sample. Source [3] N. Kim, K. Adhikari, R. Dhakal, et al., Scientific Reports, vol. 5, No. 7807, 2015, © 2015 CC
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with various concentration is dropped on the resonant sensor and the corresponding S-parameters are being measured [3]. The measured S-parameters of the empty resonator and the resonator loaded with different samples under test are presented in Fig. 14, where for all the cases, the resonant frequency shifts downward from the unloaded frequency (2.246 GHz). In this situation, the obtained changes in the measured S-parameters may be interpreted as the effective interaction between the MUT and capacitor/inductor of the resonator corresponding to different concentration of glucose solution. It may be observed from Fig. 14, that the measured S-parameters of the resonator change in accordance with the MUT. For example, the obtained resonant frequency of the resonator is 0.642 GHz and 1.189 GHz for glucose samples with minimum (0.25 mg/mL) and maximum concentrations (5 mg/mL), respectively. Here, the measured resonant frequency is at the minimum value for the considered maximum glucose concentration due to the involved negative correlation between the glucose dielectric constant and its concentration. It is also to be noted
Fig. 14 Dielectric characterization. a Shift in the resonant frequency under various conditions, b shift in the resonant frequency and variations in the reflection coefficient (S11 ) magnitude for water-glucose samples of varying concentrations (0.25 to 5 mg/mL), c shift in the frequency and magnitude of the transmission coefficient (S21 ) at transmission zero, d shift in the resonant frequency and variations in the magnitude of the reflection coefficient (S11 ) for serum samples with glucose concentrations varying from 1.48 to 2.28 mg/mL. Source [3] N. Kim, K. Adhikari, R. Dhakal, et al., Scientific Reports, vol. 5, No. 7807, 2015, © 2015 CC
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that the increased glucose concentration broadens the resonator bandwidth due to the increase in the overall loss [3]. Next, the propagation constant (γ ) and impedance (Z) is derived from the measured S-parameters corresponding to different glucose concentrations by employing various standard relationships, (3), (5) and (6). The derived propagation constant (γ ) and impedance (Z) can further be utilized to extract the corresponding equivalent circuit parameters of resonators (2), [3]. A typical parameter variation is shown in Fig. 15, where, the variation in parameter values corresponding to a change in glucose concentration can be noticed. Therefore, the highly sensitive IDC biosensor described above can be used for the possible diabetic detection using the measurement carried out in the specified RF range.
Fig. 15 Variation of various secondary parameters related to IDC inspired resonant biosensor with varying glucose concentrations, a impedance, b propagation constant, c conductance, d capacitance. Source [3] N. Kim, K. Adhikari, R. Dhakal, et al., Scientific Reports, vol. 5, No. 7807, 2015, © 2015 CC
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3.3 Resonant IDC-Inspired Sensor for Edible Oil Adulteration Detection The microstrip fed IDC inspired resonant sensor is also utilized to detect the presence of adulteration in common edible oils at the ISM (industrial, scientific and medical) frequency band (5.85 GHz) [16]. It basically measures the relative change in the resonant frequency corresponding to the different concentrations of contaminants in edible oil. The considered sensor structure with optimized values of different geometrical dimensions and enlarged view along with the associated electric field distribution over the sensing region is presented in Fig. 16. From the electric field plot shown in Fig. 16b, it can be noticed that the maximum field is concentrated around the resonant sensing structure of the sensor which basically facilitates the high sensitivity of the sensor. The plot of shift in the resonant frequency and variation in the insertion loss for change in the dielectric properties of the test specimen is shown in Fig. 17, to show its dielectric sensitivity. A typical experimental setup and the S-parameters corresponding to different oil samples are presented in Fig. 18, where it can be noticed that measurement of different edible oils results in different resonant frequencies although the difference in the dielectric properties of these oil samples is relatively small, as observed from Table 1 [16]. Therefore, the adulteration of targeted edible oil with other cheaper substitute can easily be identified with this type of IDC inspired sensor due to the associated difference in their dielectric properties [16]. A typical plot corresponding to the change in resonant frequency for various adulteration levels is shown in Fig. 19, where a noticeable shift in the resonant frequency can easily be observed. Thus, the IDC inspired planar RF sensor can suitably be employed to detect the purity of various standard edible oils for possible adulteration with other types of cheap oils.
Fig. 16 Numerical design, a structure of the sensor with dimensions, W = 0.4 mm, g = 0.5 mm, S = 4 mm. I = 4.7 mm with enlarged view of resonant structure, b electric field variation in the proposed sensor at the resonant frequency. Source [16] © 2016 IEEE
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Fig. 17 A typical numerical data, a change in resonant frequency (GHz) corresponding to different relative permittivity values, b the insertion loss under loaded condition corresponding to different loss tangent values. Source [16] © 2016 IEEE
Fig. 18 Experiment, a measurement setup for edible oil adulteration detection, b measured S2l plot for different edible oil samples, employed in [16]. Source [16] © 2016 IEEE Table 1 Measured permittivity and loss tangent of edible oil samples
MUT measured loss
Measured permittivity
Measured loss tangent
Olive oil
2.9839
0.0353
Coconut oil
2.5815
0.0313
Soyabean oil
2.4238
0.0276
Sunflower oil
2.1686
0.0152
Mustard oil
2.0412
0.0041
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Fig. 19 The percentage adulteration as a function of measured resonant frequency of the test specimen. Source [16] © 2016 IEEE
The applicability of the above IDC RF sensor is also tested for other industrial applications such as the petrochemical industry where the oil spill is a common undesired incidence [17]. To emulate the real scenario, the petroleum chemical is carefully spilled over the water medium and accordingly, the change in measured resonant frequency for different concentrations of the spill is recorded as shown in Fig. 20. In this Figure, at first, the S-parameters corresponding to petroleum sample and water medium are recorded separately to get the preliminary idea about the corresponding resonant frequencies. Thereafter, the S-parameters corresponding to different spill concentrations are measured to record the individual resonant frequency which is then plotted against the corresponding spill concentration to get the quantitative interpretation about the sensor performance. From the plot, it is obvious that even the presence of a small spill can easily be detected with the IDC inspired RF resonant sensor. It can thus be inferred that the application of the IDC inspired resonant sensor is quite adaptable for various industrial grade applications.
3.4 IDC-Inspired Planar Resonant RF Sensor for Retrieval of Permittivity The modified IDC structure, integrated with the SRR topology, has recently been utilized to attain an improved sensitivity, as compared to that of the simple SRR based RF sensor, as shown in Fig. 21. From the plot shown in Fig. 21, one can easily notice the strong concentration of the electric field over the IDC sensing region which eventually leads to improved sensitivity. The prototype of the sensor and corresponding S-parameters of various MUT are presented in Fig. 22, where it is observed that the obtained S-parameter changes
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Fig. 20 Measured results, a S21 plot for pure water and petrol, b S21 plot for different amount of petrol spill, c Variation in resonant frequency with change in % of petrol spill over water. Source [17] © 2016 IEEE
Fig. 21 Numerical analysis, a structure of IDC—SRR based dielectric sensor with dimensions , L 1 = 4 mm, L 2 = 7 mm, g = 0.3 mm, wd = 0.3 mm. b = 1.5 mm. b Electric field configuration near IDC based SRR at 2.45 GHz, c sensitivity improvement of IDC-SRR topology. Source [18] © 2017 IEEE
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Fig. 22 Resonant sensor, a fabricated prototype of IDC-SRR dielectric sensor with an enlarged view of the resonant structure, dotted lines inscribed area represents the position of the sample, b measured S21 plot for different dielectric and magneto-dielectric materials. Source [18] © 2017 IEEE
Table 2 Measured permittivity of different dielectric and magneto-dielectric materials
MUT
Measured
Er
% Error
Carbonyl Iron
5.84
5.5 [31]
6.18
Ni0.6 Co0.4 Fe2 , O4
3.23
–
–
30% Cobalt-polystyrene
2.74
–
–
20% Cobalt-polystyrene
2.34
–
–
Teflon
2.09
2.1 [8]
0.48
PVC
2.62
2.65 [8]
1.13
Polyethylene
2.23
2.26 [8]
1.33
Plexiglas
2.65
2.6 [8]
1.92
Natural rubber
2.57
–
–
Epoxy resin
3.29
3.5 [33]
6.00
in accordance with the dielectric properties of test specimen, which is quite obvious from the earlier discussed theory. The measured S-parameters are then employed in conjunction with the developed empirical model [18], to estimate the dielectric constant of test specimens. From Table 2 [18], it can be ascertained that the sensor prototype can suitably be employed for quite accurate estimation of the dielectric constant of test samples.
3.5 IDC-Based Microfluidic Sensor for Glucose Monitoring The IDC integrated SRR structure based high-sensitive resonant microwave microfluidic RF sensor has recently been implemented for detecting glucose concentration in
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aqueous medium. To facilitate the measurement of lossy liquids/fluids, a microfluidic channel is accordingly positioned over the IDC region of the SRR. In present application, aqueous solutions with various glucose concentrations (0 to 5000 mg/dl) are characterized based on the shift in the resonant frequency and the normalized peak attenuation of the measured S-parameters. The measured sensitivity of the IDC inspired resonant sensor is found to be 2.60E-02 MHz/mgdl−1 [19]. The schematic of the resonant IDC sensor along with its electric field over the IDC sensing region and PDMS integrated complete sensor topology is presented in Fig. 23 [19]. The electric field plot shown in Fig. 23b clearly demonstrates the strong field confinement leading to an improved interaction between the field and aqueous solutions, which are basically loaded on the sensor through the designed PDMS channel. The in-lab experimental setup along with the fabricated prototype of the resonant sensor are shown in Fig. 24. Figure 24 also includes the plot of the insertion loss which depicts a substantial notch at the measured resonant frequency of the IDC based resonator. Afterwards, the S-parameters corresponding to the loading of different glucose concentrations are measured to record the individual resonant frequency and notch level and accordingly to develop the graph between them, as shown in Fig. 25. The generated graph helps to develop the empirical relationship between the resonant frequencies/notch-levels and
Fig. 23 A typical numerical data related to IDC inspired resonant element, a schematic design with parameters of the sensor, b electric field distribution (V/m) of the sensor design (f 0 = 4.18 GHz), c perspective view of the sensor. Source [19] © 2019 IEEE
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Fig. 24 Typical setup employed in [18], a experimental arrangement, b top view of the fabricated sensor, c non-planar PDMS microfluidic channel, d measured magnitude of transmission parameter. Source [19] © 2019 IEEE
Fig. 25 Typical measured parameters, a transmission parameters corresponding to different glucose concentrations, b resonant frequency and transmission minimum magnitude variations plot as a function of glucose concentration. Source [19] © 2019 IEEE
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Fig. 26 Sensor prototype performance, a measured transmission parameters of unknown glucose samples for various concentrations, b Retrieved glucose concentrations from measured resonant frequency and peak attenuation in a using developed empirical relationships. Source [19] © 2019 IEEE
the measured glucose concentrations, to estimate the unknown glucose concentration [19]. Finally, to ascertain the applicability of designed sensor, the resonant frequency and notch level corresponding to the unknown glucose concentrations are measured (Fig. 26a), where, the developed empirical modelling is employed to ascertain the considered concentration level, as shown in Fig. 26b. This Figure shows that the IDC based resonant sensor can quite suitably be employed for an accurate estimation of glucose concentration in the targeted aqueous solutions.
3.6 Dual Band IDC-Based Resonant Sensor Apart from the single band IDC resonator-based RF sensor described above, the multiband RF sensors based on the concept of IDC resonator may also be designed and developed in order to test the targeted liquid samples over different frequency points. A typical example of the CPW fed dual band IDC sensor along with its electric field distribution at the respective resonant frequencies, 2.45 GHz and 5.85 GHz, is shown in Fig. 27. The actual values of various parameters along with the detailed design procedures are available in the earlier reported work [20]. From the electric field plot, it can be seen that both the resonant IDC elements facilitate the relatively strong electric energy confinement over the IDC inspired sensing region at the corresponding resonant frequencies that leads to quite substantial interaction between the MUT and the electric field at the designated frequencies [20]. Thus, it can be postulated that an integration of IDC-like resonant elements with the RF transmission line leads to design of multi-band RF sensor with different resonant frequencies corresponding to various resonating elements. A typical measurement setup along with the measured S-parameters corresponding to the dual band IDC CPW based RF sensor loaded with different chemicals under test, is shown in
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Fig. 27 IDC inspired resonator: a geometry of CPW etched dual band sensor with magnified view of the sensing area at with resonant frequency of 2.487 GHz and 5.825 GHz, b electric field distribution at 2.49 GHz and 5.825 GHz. Source [20] © 2015 IEEE
Fig. 28 Experimental image, a measurement setup and fabricated dual band resonator, b measured S21 magnitude corresponding to the resonant frequency for different samples. Source [20] © 2015 IEEE
Fig. 28. From this Figure, it can clearly be noticed that the IDC resonant sensor can conveniently be used for the dual band application.
3.7 IDC-Inspired Wireless Sensing System for Testing of Biological Samples In this configuration, the wireless RF sensing system comprising of ultra-wideband transmitter-receiver antenna and highly sensitive IDC inspired structure is employed
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Fig. 29 A typical wireless sensing system, A detailed setup used for numerical analysis, B Anticlockwise: a 3D electric field intensity in entire wireless sensor, b enlarged view of the electric field intensity at 2D plane of resonant sensor, c transmitted signal observed at Port 2. Source [21] © 2018 IEEE
for assessment of glucose and saline concentration, which are quite crucial for various biomedical applications as shown in Fig. 29 [21]. The RF sensor system, shown in Fig. 29, basically provides the cost-effective wireless sensing technique, where the ultra-wideband printed antennas, operational in 1–18 GHz with highest gain of 7 dBi, are incorporated. The wireless sensor of the proposed RF system helps to attain the relatively higher sensitivity (60 MHz per/unit change in dielectric constant of liquid sample) due to the presence of IDC inspired resonant structure in sensor topology [21]. From this, figure, it is also evident that the electric field concentration over the sensor area is quite substantial to facilitate the effective MUT-field interaction which can be noted from the received transmission coefficient plot where strong notch level can be observed at the resonant frequency. A typical experimental setup, employed for wireless sensing system in [21], to accomplish the in-lab testing of biological samples, i.e., glucose and saline solutions, is presented in Fig. 30. The prepared glucose and saline solution (water based) can then be placed in the designated sample holder to record the corresponding S-parameters in order to visualize a change in their profile. From the measured S-parameters data shown in Fig. 31, a quantitative relationship between the glucose/saline concentration and measured resonant frequency can be generated, as shown in Fig. 32. From this Figure, it can be ascertained that the measured resonant frequency varies in proportion to the concentration of glucose/saline in liquid medium, here water. Therefore, for the particular biomedical application, where it is required to assess the actual saline/glucose concentration remotely, the IDC inspired wireless RF sensing system can effectively be employed [21]. It may be noted that in addition to above specified applications, the IDC based RF sensors have also effectively been utilized for the non-destructive wideband dielectric testing of biological liquids and cell suspensions, especially for the smaller sample volume [12]. For such type of applications, an IDC-like element has been modelled as an electrically small discontinuity, within the sensing region of the miniaturized planar transmission-line sensor [12]. The IDC inspired sensors have also
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Fig. 30 A typical wireless sensing measurement setup with inset shows the sensor with the cuvette for liquid sample measurement. Source [21] © 2018 IEEE
Fig. 31 Normalized transmission data of a glucose solution, b water based saline solution with enlarged view of the marked regions. Source [21] © 2018 IEEE
been explored for the wideband dielectric property estimation of various biological samples including the protein solution [12].
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Fig. 32 Performance curve of a glucose (w/v) and b saline (v/v) samples with various concentration in water solution. Error bars represent a standard deviation calculated from N = 8 measurements. Source [21] © 2018 IEEE
4 Conclusion The main focus of this chapter has been to provide an overview of the basic operating principle of various IDC based planar RF sensors, and their implementation for dielectric testing applications. To this end, the detailed analysis procedure of the IDC element using the quasi-static model and the electromagnetic model has been described. The dielectric sensing mechanism of some typical IDC based sensor structures has also been provided in the chapter. A number of resonant and nonresonant types of IDC structures relevant to the dielectric sensing applications have been discussed. Finally, various planar IDC RF sensor configurations proposed in the literature for industrial, environmental, and biomedical applications have also been described.
References 1. A.V. Mamishev, K. Sundara-Rajan, F. Yang, Y. Du, M. Zahn, Interdigital sensors and transducers. Proc. IEEE 92(5), 808–845 (2004) 2. S.C.Mukhopadhyay, Smart nitrate sensor: internet of things enabled real-time water quality monitoring, smart sensors. Meas Instrum. 35 (2019), ISBN: 978-3-030-20094-7 (Print) 9783-030-20095-4 (Online) 3. N. Kim, K. Adhikari, R. Dhakal et al., Rapid, sensitive and reusable detection of glucose by a robust radiofrequency integrated passive device biosensor chip. Sci. Rep. 5(7807), 1–9 (2015) 4. M.R.R. Khan, S.W. Kang, Highly sensitive multi-channel IDC sensor array for low concentration taste detection. Sensors: MDPI 15, 13201–13221 (2015) 5. T. Chen, D. Dubuc, M. Poupot, J. Fournie, K. Grenier, Accurate nanoliter liquid characterization up to 40 GHz for biomedical applications: toward noninvasive living cells monitoring. IEEE Trans. Microw. Theory Tech. 60(12), 4171–4177 (2012) 6. X. Bao et al., A planar one-port microwave microfluidic sensor for microliter liquids characterization. IEEE J. Electromagn. RF Microw. Med. Biol. 2(1), 10–17 (2018) 7. L. Zhu, K. Wu, Accurate circuit model of interdigital capacitor and its application to design of new quasi-lumped miniaturized filters with suppression of harmonic resonance. IEEE Trans. Microw. Theory Tech. 48(3), 347–356 (2000)
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8. T. Chretiennot, D. Dubuc, K. Grenier, A microwave and microfluidic planar resonator for efficient and accurate complex permittivity characterization of aqueous solutions. IEEE Trans. Microw. Theory Tech. 61(2), 972–978 (2013) 9. G.D. Alley, Interdigital capacitors and their application to lumped-element microwave integrated circuits. IEEE Trans. Microw. Theory Tech. 18(12), 1028–1033 (1970) 10. K. Hettak, N. Dib, A. Sheta, S. Toutain, A class of novel uniplanar series resonators and their implementation in original applications. IEEE Trans. Microw. Theory Tech. 46(9), 1270–1276 (1998) 11. H. Samant, A.K. Jha, M.A.H. Ansari, M.J. Akhtar, Design of CPW fed IDC resonator for noninvasive testing of chemical solvents, in IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) 2015 (Cocoa Beach, FL, 2015), pp. 1–4 12. N. Meyne née Haase, G. Fuge, H. K. Trieu, A. Zeng and A.F. Jacob, Miniaturized transmissionline sensor for broadband dielectric characterization of biological liquids and cell suspensions. IEEE Trans. Microw. Theory Tech. 63(10), 3026–3033 (2015) 13. L.F. Chen et al., Microwave Electronics: Measurement and Materials Characterization (Wiley, West Sussex, England, 2004) ISBN: 9780470844922 (Print), 9780470020463 (online). https:// doi.org/10.1002/0470020466 14. S.O. Nelson, Permittivity and density relationships for granular and powdered materials, in IEEE Antennas and Propagation Society Symposium, 2004, vol.1 (Monterey, CA, USA, 2004), pp. 229–232 15. M.R.R. Khan, A. Khalilian, S.W. Kang, Fast, highly-sensitive, and wide-dynamic-range interdigitated capacitor glucose biosensor using solvatochromic dye-containing sensing membrane,” Sensors: MDPI 18(1)–(13), s16020265 (2016) 16. M.S. KT, A.K. Jha, M.J. Akhtar, Nondestructive technique for detection of adulteration in edible oils using planar RF sensor, in IEEE MTT-S International Microwave and RF Conference 2016, IMaRC 2016 (New Delhi, 2016), pp. 1–4 17. M.S KT, N.K. Tiwari, A.K. Jha, M.J. Akhtar, Microwave planar resonant sensor for detection of oil spills, in Mediterranean Microwave Symposium 2016, MMS 2016 (Abu Dhabi, 2016), pp. 1–4 18. K.T.M. Shafi, A.K. Jha, M.J. Akhtar, Improved planar resonant RF sensor for retrieval of permittivity and permeability of materials. IEEE Sens. J. 17, 5479–5486 (2017) 19. G. Govind, M.J. Akhtar, Metamaterial-inspired microwave microfluidic sensor for glucose monitoring in aqueous solutions. IEEE Sens. J. 19, 11900–11907 (2019) 20. H. Samant, A.K. Jha, M.J. Akhtar, Design of coplanar dual band resonator sensor for microwave characterization of dispersive liquids, in IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015 (Hyderabad, 2015), pp. 249–252 21. A.K. Jha, Z. Akhter, N. Tiwari, K.T.M. Shafi, H. Samant, M.J. Akhtar, M. Cifra, Broadband wireless sensing system for noninvasive testing of biological samples. IEEE J. Emerg. Sel. Top. Circuit. Syst. 8, 251–259 (2018)
Biomedical Application of Interdigital Sensors Nasrin Afsarimanesh, Ghobad Shafiei Sabet, and S. C. Mukhopadhyay
Abstract Interdigital or interdigitated electrodes have been extensively employed as a fundament to create various types of sensors for quite some time. The significant benefits of this type of sensors such as high sensitivity, ease of fabrication, reusability etc., have led to their applications in a variety of sectors in the field of science and technology. Biomedical application of interdigital sensors is one of the most prominent applications of them, which has recently attracted so much attention among researchers. In biomedical sector, sensors have been connected to different types of signal-conditioning circuits to process and transfer data to the monitoring part of the system. Based on the application for which interdigital sensors have been used, design, processing material, configuration and size of the sensors have been largely varied. These parameters vary the performance of the sensors in terms of efficiency and sensitivity. This chapter studies different types of interdigital sensors developed for biomedical applications and some of their challenges.
1 Introduction During the last few decades, interdigital sensors have been extensively employed in many different applications [1–4], due to their promising features such as miniaturization size, rapid response, no radiation, and the low cost of fabrication [5, 6]. Some important benefits of interdigital sensors are their simple and low-cost fabrication method and the possibility to utilize them in many various applications with no need to make main changes in the design [7–9]. Apart from these features, another advantage could be the ability to link sensors with instrumentation to develop lab-onchip devices. In addition, the sensitivity of interdigital sensors could be enhanced by adjusting the dimension of the sensors [10]. However, not much work has been done N. Afsarimanesh (B) · G. Shafiei Sabet DGUT-CNAM Institute, Dongguan University of Technology, Dongguan, China e-mail: [email protected] S. C. Mukhopadhyay Macquarie University, Sydney, Australia © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_9
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to evaluate the effect of geometry of interdigital sensors on their operation [10–13]. Another significant advantage of planar interdigital sensors is the single-side access to the material under test (MUT) when there is a restriction to use both sides of the MUT [14]. The non-destructive testing (NDT) feature [15, 16] is another advantages which makes interdigital sensors more useful in in vitro analysis and process-control applications [17]. Igreja et al. studied the problems related to the design of interdigital electrodes for a multi-layer structure. In this study, an analytical tool was employed to analyze the NDT and material characterization of this type structure [18]. Li et al. provided a thorough investigation on the effects of the design parameters and geometry of interdigital sensors on their performance. They used finite element simulations to evaluate the effects of width and thickness of substrate on sensor performance [19]. Interdigital sensors follow the same working principle as parallel-plate capacitors. The planar structure of the electrodes offers a non-invasive, low signal-to-noise ratio, and single-sided measurement of the tested samples. When the electrodes slowly open, the electric field is stretched to a wider space, which then produces a fringing electric field. By changing the position of the electrodes to a co-planar configuration, the fringing electric field becomes foremost between the working and sensing electrodes [20]. The conversion from a parallel-plate capacitor to a planar interdigitated sensor is shown in Fig. 1 [17]. The repeated nature of the electrodes causes a stronger signal compared to those gained by only one pair of electrodes. When a low amplitude AC signal is applied to the electrodes, an electric field is produced between the planar electrodes. Since the electrodes are placed in a planar structure, the caused electric or magnetic fields bulges out from one electrode to another electrode of opposite polarization. The form of the produced field would differ depending on the space between the electrodes. In conventional sensors, the two electrodes are considered as excitation and reference electrodes. During the biomedical tests, samples would be in contact or proximity with the sensing surface of these devices. As the electric field is formed and moves from one electrode to another, these fields enter through the MUT. The rate of penetration varies by changing the gap between the electrodes [21]. When the bulging electric field moving between the electrodes enters through the MUT, it creates an electrical displacement to cope with the applied field which happens because of the ionic and faradic currents flowing between the electrode-electrolyte interfaces. The change in the electric field subsequently changes the capacitance.
Fig. 1 Schematic of the transition from a parallel-plate capacitor to a planar sensor that provides one-sided access to MUT
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This variation in capacitance could be used to determine the characteristics of the MUT. Generally, the planar interdigital sensors are useful in determining capacitance, dielectric constant, and bulk conductivity in various mediums [22]. In some biomedical applications, the interdigital sensors measure the rate of applied strain. These sensors are made of flexible materials. The working principle of flexible sensors [23] is somewhat different from the sensors with rigid substrates. Due to the flexible structure of these sensors, any changes in the overall dimension of the sensor causes a change in the response of the sensor which would be a result of the strain-induced on the sensor. Figure 2 illustrates the working principle of interdigital flexible sensors used in biomedical applications. When the flexible interdigital sensor is bent, some parameters of the sensor such as the space between the electrodes (d), the length (L) and the width (W) of the sensor change. These variations would offer a significant change in the overall structure, producing a change in the capacitance of the sensor [24]. This book chapter reviews applications of interdigital sensors in biomedical sectors. Sensors have been designed and fabricated with different dimensions and materials based on the specific applications for which they can be employed. Table 1
Fig. 2 Working principle of flexible planar interdigital sensors [24]
Table 1 Substrate and electrodes materials, and the dimension of some Interdigital Sensors developed for biomedical applications Substrate material
Electrodes material
Dimensions (width, gap, and thickness)
Reference
Polyimide-PDMS
Brass Sheet
127 µm thickness and 5 µm gap
[25]
Silicon
Gold
800 nm width, 120 nm thickness and 400 nm gap
[26]
PDMS
Conductive fabric
10 mm length, 57 µm thickness, 1.5 mm width and 1 mm gap
[24]
Silicon
Gold
2.5 mm length, 25 µm width, 500 nm thickness and 25 µm gap
[27]
PDMS
Graphite
18 mm length, 2 mm width and 1.5 mm gap
[28]
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Table 2 Comparative study of different kinds of interdigital sensors based on electrochemical sensing for different kinds of applications Sensor materials
Sensitivity
Linear response Detection range
Reference
Copper, chromium, polyimide
45.78 mV/decade
1 µM – 1 M
1 µM – 1 M
[29]
Gold, 2-mercaptoethylamine
0.22 nF.pg ml−1
5 pg ml−1 – 1 ng ml−1
1.34 pg ml−1
[30]
Reduced graphene, oxide
180 k/% RH
0–75%
0–100%
[31]
Polyaniline, reduced graphene oxide
457.4 µA mM−1 cm−2
0.4–183.7 mM
0.1 µM
[32]
Carbon Nanotubes
2.72 kPa−1
0–20 kPa
0–140 kPa
[33]
Hollow MXene spheres, Reduced graphene, Aerogel
609 kPa−1
0–10 kPa
6.4–10 kPa
[34]
Table 3 Comparative study of different kinds of interdigital sensors based on strain sensing for different kinds of applications Sensor materials
Gauge factor
Detection limit (%)
Reference
Palladium, PET
55
0.3
[35]
Silicone elastomer, Conductive-knit fabric (Shieldex® )
0.3
0.6
[36]
Liquid crystal polymer, Polyimide
1.38
0.145
[37]
PDMS, Conductive fabric (VeilShield)
0.87
0.1
[24]
Carbon black, Barium titanate, Ecoflex
1.7
1
[38]
summarizes some significant interdigital sensors developed for biomedical applications. The dimensions of each of these prototypes depend on their application, as well as the material that was being processed. Tables 2 and 3 elaborate the differences in the sensing parameters of each of the prototypes for different applications based on electrochemical sensing and strain sensing, respectively.
2 Biomedical Applications of Interdigital Sensors Sensors used in biomedical applications should meet certain requirements to provide similar or even better results than the conventional available systems. These systems need to be easy to use, small-size, low-cost, and reliable [39]. The need for a low amount of sample and a rapid analysis are the requirements for the imminent applications of biomedical sensing devices. Thus, the opportunity of miniaturization and automation are the incentive for novel advances. An important approach is the possibility of using such sensing devices for the detection of a biomarker in different
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body fluids and tissue extracts [40]. Therefore, study on sensing devices is determined by the attention to design special sensors, which could be later utilized for quick and reliable measurements in various biomedical applications. The market for such devices has been projected to grow by around 15% every year [39]. To develop such sensing systems, some research has been done to develop lab-on-a-chip devices [41–43] in which all the steps such as sampling, preparation, examination and reporting are joint and automated [44]. For point-of-care testing [45–47], all these jobs must be combined to develop a complete sensing system which can take over different biomedical applications for detection and treatment of diseases, and ultimately, employ them as portable and handheld biomedical devices [48–50]. There are several benefits in using interdigital sensors, which make them fit for biomedical applications. One of the most considerable benefits is single-side access to the MUT. This feature makes it possible to infuse the sample with magnetic, electric, or acoustic fields from only one side. Besides, the output signal can be adjusted by changing the number of interdigitated electrodes, the space between them, as well as the dimension of the sensing area. The capability of being used in non-destructive testing is another advantage of interdigital sensors, which makes them more appropriate for online analysis and process-control uses [17]. A novel interdigital capacitive (IDC) strain sensor for wireless structural health monitoring applications was reported by Hung et al. [25]. In this work, the sensors were fabricated by laser-micromachining technique [51]. The wireless monitoring system was created using a commercial wireless module which could offer simultaneous multi-modality monitoring [52]. A graphical user interface was developed for data storage and presentation, and online data evaluation. The sensitivity of the sensor was evaluated in both stretching and bending modes, proving 0.025% of the limit of detection for strain. The gauge factor was estimated in the range of 6 to 9 which is much more than those of the commercial strain gauges. The bending detection of the developed sensors is consistent up to 20°. Hysteresis and temperature behavior were also studied, exhibiting expectable results. Finally, the proposed sensing device was formed with both single and multiple sensors for a real-time structural health monitoring application. The block diagram of the developed wireless structural health monitoring is shown in Fig. 3. Another interesting work in this sector was presented by Chen et al. [53], in which the sensors were formed by printing the interdigital electrodes on plastic films for monitoring and analyzing the density of tumor cells. The sensor responses were verified with cell culture solutions formed with deionized water and PBS solutions. Finally, the responses were investigated using the electrochemical impedance spectroscopy technique. The thickness of substrate was around 500 microns and gold-based ink was directly printed to create the conductive electrodes. The shape of the electrodes was created using stainless steel masks. The dimension of the electrodes included width and gap of 100 microns and 20 microns, respectively. The samples were tested inside a PDMS chamber, used to load samples by attaching the films on the chamber following to the plasma treatment. The frequency range used for the experimental purpose was from 1 kHz to 1 MHz. Lee et al. reported a graphene-based electrochemical sensing microneedles for diabetes monitoring and
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Fig. 3 The block diagram of the structural health monitoring system using the developed IDC strain sensors [25]
therapy [54]. Monitoring of the biomarkers and physiological signals was done with sweat control and transcutaneous drug delivery system to accomplish a suitable point-of-care therapy for diabetes. The sensing system involved bare graphene doped with gold and gold mesh to increase the electrochemical activity. The developed system contained different elements such as a heater, and some sensors like temperature, humidity, glucose and pH sensors, along with some polymeric needles. These components were joined to form a sensing device for the thermal activation of drugs. The performance of the proposed system was evaluated by testing it on a diabetic mouse by delivering Metformin. The sensor was formed using a bilayer formed with a serpentine gold mesh and gold-doped CVD-formed graphene. These layers qualified to high conductivity, mechanical reliability and optical transparency for the system. The measurements were taken from the doped-graphene layer and compared with that of the gold mesh layer, due to the higher electrochemical activity in the former layer. Changes in current and impedance values were determined using cyclic voltammetry, which was the result of charge transfer and redox reactions. The highest charge transfer resistance was in the gold layer, which was compensated by the doped-graphene layer because of the conducting sites appear in the electrochemically active regions. The stability of the doped graphene layer was further confirmed by the temperature-dependent impedance measurements. The excellent electrochemical interactive capability was proved by functionalizing the doped layer with different kinds of monomers. The model was then shifted to a thin silicone patch to create a patterned electrochemically-functionalized hybrid sensing system. Resistance modulation of the graphene and gold mesh layers is done to create the heater, tremor sensor and temperature sensor. Any variation in relative humidity is determined with respect to the corresponding variation in the impedance of the interdigitated PEDOT electrodes to show the presence of sweat on the skin. The
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electrochemical reactions of the doped graphene layer due to the reduction of the hydrogen peroxide from the glucose oxide was estimated to determine the change in the glucose level. The pH was also measured, where fluctuations in electrochemical signals were determined due to Polyaniline (PANi)/GP hybrid in combination with the Ag/AgCl counter electrode. The shared operation was done by real-time in vitro testing of artificial sweat. The diabetic patch was exposed to a minimum of 20 µl of the sample to define the starting point for glucose and pH sensing. The response of pH and glucose respect to the change in temperature was examined, where the sensitivity of glucose and pH were realized to be somewhat reduced and then constant, respectively. The recordings related to high glucose level triggered the heaters to dissolve phase-change material (PCM) [55] and hence, bio-resorbable microneedles released Metformin as feedback transdermal drug delivery to the glucose detection. It was reported that fundamentally soft materials improve the conformal adaptivity of devices with the human skin and thus enhances the efficiency of biochemical sensors and drug delivery. Elsholz et al. reporte an automated electrical method for to detect and measure pathogens, which are mainly involved in urinary tract infections [26]. Interdigital sensors with gold electrodes were fabricated for sensitive investigation. These sensors were developed on standard 6-inch silicon wafers. The area of the sensor were 9 × 10 (mm)2 , including 16 electrodes with the diameter of 500 µm. The gold electrodes functionalized by thiol-modified oligonucleotides were employed as the capturing probes. The electrical signals were produced by amperometric redox cycling and captured by a unique multi-potentiostat. The device output signals were position specific current and changed over time with respect to the levels of analyte. The authors expressed that if two additional biotins are added into the affinity binding complex, the sensitivity of the system enhances more than 60%. The LOD for the developed system had been calculated to be 0.5 ng/µL. The control of fluidics, as well as the multichannel electrical information and data management, have all been fully automated. Nebling et al. [56] presented development of a completely electrical sensor for the detection of viral DNA. The electronic detection was based on interdigital ultra-microelectrode arrays developed using the silicon technology. Oligonucleotide capture probes were coated on the gold electrodes using the thiol—gold self-assembling technique. The nanoscale electrodes were developed to carry out a sensitive detection of enzyme activity by signal enhancing redox recycling of hydroxyaniline (HA). Multiplexing and serial details were identified using a CMOS ASIC module [57] and a computer-controlled multi-channel potentiostat. A 16-channel multi-potentiostat fitted out with two multiplexers was employed for electrochemical measurements. In this work fundamental of the silicon-based electrical biosensor was introduced for different experimental setups and for the detection of virus DNA in real unpurified multiplex samples. It was claimed that quick and quantitative assessment for all types of affinity assays was strong and particle tolerant. The developed electrical biochip and structure of the measurement system are depicted in Fig. 4. Chen et al. presented the design and fabrication of an interdigital surface acoustic wave (SAW) [58, 59] gas sensor as a virtual sensor array, linked with an imaging
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Fig. 4 a chip on PCB; b 16-channel multi-potentiostat with chip and flow-through cell connected to the reference electrode, pump, and computer; c chip positions; d submicrometer interdigitated electrode fingers and the three-dimensional polymeric ring structures [56]
detection method for non-invasive diagnosis of lung cancer [60]. It consisted of a gas path made of a two-bag system, solid-phase microextraction (SPME) [61] and a capillary column. A pair of SAW sensors were utilized to recognize chemical compounds. One of the sensors were coated with a thin polyisobutylene (PIB) film. This electronic noise could be employed to determine the quality and quantity of eleven volatile organic compounds (VOCs) [62] which are recognized as the biomarkers of lung cancer according to the pathological research. Following, an improved artificial neural network (ANN) [63] algorithm merged with an imaging method was developed for the recognition of an anomaly among patients. Finally, the electrical noise was calibrated by eleven VOCs separated into three levels and was later used to identify patients with lung cancer in a hospital. The experimental outcomes showed that this type of electronic noise could be beneficial to identify patients with lung cancer. Another research group [13] developed interdigitated electrode arrays for impedance-based measurement of Hs578T breast cancer cells [64]. Gold interdigitated electrodes were patterned on 4-inch glass substrates using photolithography and metal deposition technologies. The 3000 PY photoresist [65] was used to pattern the electrodes and contact pads. The substrate was layered with a 15 nm of chromium
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and then 20 nm of gold. Then, the photoresist film was removed using acetone. Finally, SU-8 photoresist [66] was employed to create a passivation layer. In this phase, only the electrodes and contact pads were exposed. Eventually, a passivation layer was created using the SU photoresist. This layer was then baked to produce an inert polymer resin. The proposed device was then diced and 6 mm cultivation chamber was attached and sealed using gradually heated photoresist near the outer edges of the chamber. Former to the impedance measurements, the Hs578T breast tumor cells were cultured. The device was first rinsed and then the sample was kept on the electrodes for 20 min and removed before the cellular inoculation. The device was then immunized with a small amount of cell suspension with a concentration of 14.67 × 104 cells/ml. 200 µl of medium was then added to the culture slots. An incubation period of 24 h was given to ensure proper devotion of the cells to the electrodes. Lastly, impedance variation was measured using an Agilent 4294A impedance analyzer in a frequency range of 100 Hz to 10 MHz. System calibration was done using the manufacturer protocol. Baseline measurements were conducted using medium, followed by the measurements of cellular impedance. Afsarimanesh et al. developed a smart sensing system for the prognostic monitoring of bone health [27]. They designed and fabricated a selective interdigital gold electrode sensor on a silicon substrate for the recognition and quantification of the Cterminal telopeptide of Type-I collagen (CTx-I), which is one of the most significant biomarkers of osteoporosis [67, 68]. The electrochemical impedance spectroscopy (EIS) technique was employed to measure the changes in impedance for different levels of CTx-I samples. A MEMS sensor with an area of 10 × 10 mm2 , including a sensing area of 2.5 × 2.5 mm2 was developed, and impedance measurements were conducted using a HIOKI-3536 LCR meter. Molecularly imprinted polymer (MIP) technology was used to develop the selective coating material [69] and some optimization experiments were performed to determine the optimum coating thickness. Samples with different levels of CTx-I were measured using the proposed system and the results were confirmed using a standard ELISA kit. The proposed sensing system exhibited the LOD of 0.09 ppb. This group had also proposed a microcontrollerbased system that could quantify the concentration of CTx-I and transfer data to an IoT-based cloud server. The information could be given to the health practitioner and a detailed investigation could therefore be started for prognostic detection and treatment [27]. Figure 5 shows the graphical illustration of the proposed sensing system. Nag et al. reported the design, development and implementation of a novel straininduced graphite/PDMS sensor for biomedical applications [70]. The sensors was developed using 3D printing technique [71, 72], in which acrylonitrile thermoplastic polymer was used as the filament. The electrodes of the sensor patch were made of Graphite and PDMS was used to create the substrate. The electrodes were formed in an interdigitated configuration with the casting of graphite powder on the 3D printed molds. Figure 6a depicts the proposed strain-induced graphite/PDMS sensor. They used the COMSOL simulation results to intricate the working principle of the sensor patches. EIS technique was used to measure impedance variations of sensor patches at different operating conditions. The maximum bending radius confirmed by the
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Fig. 5 a Configuration of the interdigitated gold electrode sensor. b Block diagram of the smart sensing system for prognostic monitoring of bone loss [27]
Fig. 6 a Dimension and configuration of the developed strain-induced graphite/PDMS induced sensor. b Attachment of the sensor patch on the finger, elbow, neck, and knee to monitor their movements based on the strain-induced of the sensor patches [70]
proposed sensor patches was 6 mm. Strain-sensing tests were successfully done based on the bending of the different parts of the body, such as a finger, elbow, neck and knee (Fig. 6b) where the sensor patches were attached. Promising outcomes have been shown by the developed sensor patches to demonstrate their capability to be used in the biomedical applications [70].
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Fig. 7 Schematic illustration of the fabrication steps of the transparent sensor [24]
Another paper presented by the same group, reported the development of a novel transparent strain sensor for wearable sensing biomedical applications [24]. They fabricated flexible interdigitated-electrode sensors using a PDMS-embedded conductive fabric and fruitfully confirmed applications of the sensor in sensing different strains. The fabrication process is illustrated in Fig. 7. The proposed sensor was characterized based on its transparency and electromechanical performance. Later, the sensors were tested in different physiological sensing situations, such as the sensing of the movement of different parts of the body and tactile sensing. Aside from great optical transparency (70%), the sensor showed prominent sensing results that approve the applicability of the proposed sensor for detection of flexible and transparent strain sensors for wearable sensing applications [73–75].
3 Challenges of the Existing Sensors Though interdigitated sensors have many different applications, there are yet some ambiguities that need to be addressed. While the sensors are characterized and used for strain sensing, they are mainly used for electrochemical sensing, because of their specific construction. This decreases the chances of using them as flexible prototypes [76]. The multi-functional nature of these sensors can be further emphasized by using flexible polymers as substrates. This can be advantageous as sensors can be used for both electrical and mechanical attributes. Another feature that should be changed
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for these sensors is the addition of selectivity for taking particular analyte. Although existence of selectivity helps to enhance the sensitivity for a particular molecule, the reusability of the sensor always remains as a limitation. The sensors need to be designed with the selective material intact to the sensor [77]. This should be wellthought-out with an extra step of removal of the captured analyte to make the sensors ready for the next measurement. This way, the electrodes can preserve a constant sensitivity, together with using the same sensor for a longer period. Moreover, to add multi-functionality, an array of electrodes should be involved in every sensor for electrochemical sensing, so that more than one analyte can be detected. Another matter that should be discussed is the minimization of the capacitance formed by the fringe effect. This should be altered by reducing the interference and noise affecting the device. Optimizing the signal-conditioning circuit related to the sensor is one of the ways to do this. Another problem that should be noted is the electronic waste produced by the used sensors. When sensors are used, they are discarded, either because they are damaged, or they have lost their sensitivity. This creates a huge amount of electronic waste, considering the use of sensing devices in every part of science and technology. One of the solutions to overcome this problem could be using organic materials to develop the substrates and electrodes of sensors, which after its use, will slowly decompose with time. The use of glassy carbon electrodes or allotropes of carbon like graphene [78, 79], carbon nanotubes [80, 81] to create the electrodes could be a wise choice. Polymers like polydimethylsiloxane (PDMS) [24, 82], polyethylene [83, 84], poly-vinyl chloride (PVC) [85, 86] and others could be considered as an alternative for substrates. This will significantly reduce the microelectronic waste produced by the sensors.
4 Conclusions and Outlook The chapter presents the importance of the usage of interdigital sensors in biomedical sector. Interdigitated electrodes have been developed using different kinds of materials, depending on the applications. Some of the advantages of interdigital sensors were their simple structure and working principle, easy alteration, low input voltage and possibility to be used in different applications. The customization of the interdigital sensors with their dimension, interdigital gap and electrical permittivity related to various applications is one of the most important advantages of interdigital sensors. there are many other numerous sectors were interdigitated sensors have been implemented due to their mentioned advantages. The applications of interdigital sensors could be further extended to new sectors by joining them with the available techniques. The development of array of sensors can prepare these sensors for different sorts of applications, with each one for a certain use. On the other hand, interdigital sensor fabrication techniques can be controlled to prepare each of these sensors specific for a particular analyte. This would not only make the array of sensors multifunctional but would also cut the cost of the sensors. The bacterial and pathological detection is another area that could be further studied to recognize very low scale
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microorganisms. With the current progress in medical science, a lot of new viruses are coming up, which need to be recognized. Interdigital sensors, having a simple fabrication procedure, could be selected as a popular possibility for their large-scale detection.
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Fabrication of Interdigital Electrodes for Monolithic Biosensing Nireekshan Kumar Sodavaram and S. C. Mukhopadhyay
Abstract Interdigital electrodes/contacts (IDCs) based sensors are widely used in a variety of chemical and biological sensors, which presents promising advantages such as high sensitivity, low electron mobility, enhanced gate conductivity and increased signal to noise ratio. In particular, interdigitating (or interlocking) the electrodes can be valuable for organic field-effect transistors (OFET) designed using conducting polymers and peptides as semiconducting material. The current chapter discusses the finite-element numerical modelling along with the design and fabrication of IDC-based OFETs.
1 Introduction An organic field-effect transistor (OFET) hold great potential in various applications such as the detection of cell growth, bacteria [1, 2], toxins [3], disease progression, etc. The methods available for the fabrication include electrochemical, electrolyte gated [4] and bioinspired peptide-based thin-film nanostructures [5]. The structure of an OFET is almost similar to a normal metal-oxide thin-film transistor but fabricated via solution processing of organic semiconducting materials. Over the last few years, polythiophenes are the most studied organic semiconductors in the field of OFET. Particularly, pentacene, (13,6-NSulfinylacetamidopentacene or SAP) and poly(3-hexylthiophene), P3HT, a p-type donor and regioregular semiconducting organic material due to its regular end-end arrangement of the side chain, solubility and efficient π–π stacking of the conjugated backbones [5–7]. Recently, peptide-based nanostructures derived from natural amino acids have also shown excellent semiconducting properties that can be used in the fabrication of OFET [8]. Peptides can self-assemble into ordered nanostructures via non-covalent interactions such as electrostatic interaction, hydrogen bonding, van der Waals interactions and hydrophobic interactions to form fibrous networks [9]. N. K. Sodavaram · S. C. Mukhopadhyay (B) School of Engineering, Macquarie University, North Ryde, NSW 2109, Australia e-mail: [email protected] © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_10
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At appropriate concentrations, these self-assemble peptides form hydrogels that are biocompatible and has the potential in the fabrication of OFETs for the detection of various toxins and cancerous cell growth inside the human body [10, 11]. In general, an OFET comprises of three major components that include the (1) organic material, insulating layer, and source and drain metal IDC. The insulating layer can be made of a variety of dielectric materials such as silicon dioxide (SiO2 ) and aluminium dioxide (Al2 O3 ). In contrast to the fabrication of a general metaloxide-field-effect transistor (MOSFET), the OFET devices are built using a bottomup approach that begins with the patterning and deposition of IDC on the substrates, solution processing of the organic material and deposition of the solution-processed organic material on the substrate. Figure 1 shows the conceptual diagram of the OFET configuration topologies. Since, OFET fabrication involves the solution processing of the organic semiconductor, which is deposited via spin coating, drop-casting and Langmuir Blodgett method, Backgate (BG) and bottom contact (BC) configuration are more preferred to avoid the contact with the gate or other encapsulation materials thereby circumventing contamination of the organic material [12]. IDC comprises of two interlocking comb-patterned arrays of metallic electrodes connected from a set of interdigitating electrode fingers and offers various benefits to OFETs including high sensitivity, low electron mobility, enhanced gate conductivity and increased signal to noise ratio [13]. In OFET design settings, these electrode fingers are deposited on silicon (Si) substrate with a thin oxide layer, where the bulk Si acts as a back gate. When the peptide is spin-coated, drop casted or deposited via Langmuir Blodgett method onto the silicon substrate allow it to form a hydrogel, the back gate controls the
Fig. 1 Conceptual diagram of OFET configuration topologies. a The Backgate (BG) and bottom contact (BC). b Backgate (BG) and top contact (TC), c top gate (TG) and bottom contact (BC), d top gate (TG) and top contact (TC)
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channel between the IDC forming the basis of metal-oxide-silicon (MOS) capacitor. The principle of operation depends on the electrodynamics of the two parallel plate capacitors (bulk Si at the bottom and the conducting polymer at the top). IDCs were the source and drain patterns initially used in MOS field-effect transistors (FET) to achieve a better width-to-length ratio with the limited layout space [14]. The device structure of the first organic light-emitting field-effect transistor (OLET) also comprised of interdigital source and drain electrodes [15]. There is a wealth of literature supporting the design and fabrication of IDC-based OFETs [16–23]. M.M Maters et al. investigated two solution-processed IDC-based OFETs (pentacene and PTV) for gate-voltage and temperature dependence of the mobility of (amorphous) organic transistors [24]. Supachai Ritjareonwattu et al. fabricated an ion-sensitive IDC-based OFET using P3HT as the semiconductive layer and PMMA as the gate insulator [25]. Akram R. Nasser designed, fabricated and reported on a porous silicon p-type IDC-based extended gate OFET for pH sensing [26]. Francesca Leonardi et al. fabricated an IDC based electrolyte gated OFETs (DB-TTF:PS blend and deposited by BAMS) using a low-cost technique compatible with roll-to-roll processes [27]. Stefano Casalini described an IDC potentiometric sensor based on electrolyte gate OFETs for dopamine detection [28].
2 Modelling of OFET with IDC in the Channel Field-effect is a phenomenon which propels the operation of a conventional OFET and is composed of three terminals, the gate, the drain and the source. The voltage applied to the drain assists in the charge injection in the channel. When a voltage is applied to the back gate, a thin charge layer occurs between the source and drain and the current starts to flow. The variation in the magnitude of the current flowing between the source and drain can be controlled by varying the voltage applied to the source and drain contacts [29] (Fig. 2). Numerical system modelling can aid in the optimization of initial design models. Over the last few years, computer-aided design (TCAD) based Silva ATLAS 2D finite-element numeric simulator has been widely used to predict OFET electrical behaviour along with internal physical mechanics associated with system operation [29, 30]. As an example, a back gate (BG) and bottom contact (BC) OFET with pentacene as the organic conducting layer is chosen for the finite-element numerical modelling. Figure 3 shows the structure of a pentacene IDC OFET. It was generated using Sivaco’s ATLAS to study its electrical characteristics by varying the drainsource voltage (Vds) with a constant gate-source voltage (Vgs). Various standard models such as the drift–diffusion are employed by the Silvaco’s ATLAS for modelling the transportation behaviour of charge carriers. The static and dynamic behaviour of IDC-based √ OFET studied by Poole–Frenkel mobility model of mobility μPF αμ0 (T )exp γ E , where μ0 is the zero-field mobility and E is the electric field.
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Fig. 2 Conceptual diagram of the OFET device linear mode OPERATION (VG < VD ) and (VD < VG – VTH )
Fig. 3 The Backgate (BG) Bottom Contact (BC) OFET with IDCs between the source and drain electrodes and the pentacene organic semiconducting layer created using Silvaco’s ATLAS
Material Parameters The IDC-based OFET with pentacene semiconductor layer is designed using the back gate (BG) and bottom contacts (BC) configuration. The designed structure has a channel length of 10 μm and a channel width of 100 μm (Figure). The record of simulation parameters is listed in Table 1. Figure 4a shows the output characteristics obtained by varying the drain-source voltage (VDS ) from −20 V to 20 V keeping the Gate voltage (VG ) at −25, −12.5,
Fabrication of Interdigital Electrodes for Monolithic Biosensing Table 1 Finite-element simulation parameters of IDC OFET with pentacene semiconductive layer
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2D simulation parameters
Value
Thickness of pentacene
30 nm
The thickness of dielectric (tox )
5.7 nm
The thickness of the gate electrode (tg )
10 nm
Thickness of S/D electrodes (tg /td )
15 nm
Channel width (W)
100 μm
Channel Length (L)
10 μm
Energy Band Gap
2.8
Electron affinity
2.49 eV
Intrinsic p-type doping
2 × 1017 cm−3
Work function of Gold (Au) electrode
5 eV
Pool Frenkel factor (betap.pfmob)
7.758 × 10−8 eV(V/cm)1/2
Deltap.pfmob
1.7992 × 10–2
NTA
2.5 × 1018 cm−3 eV−1
NTD
1 × 1018 cm−3 eV−1
WTA
0.129
WTD
0.5
EGA
0.62
EGD
0.78
WGA
0.15
WGD
0.15
Fig. 4 a The Output characteristics of pentacene OFET. b The Transfer characteristics of pentacene OFET
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0, 12.5 and 25 V, (b) shows the transfer characteristics obtained by varying the gate-source voltage (VGS ) keeping the drain-source voltage constant (VDS ). In addition to studying the device physics of IDC OFET, electrostatics study is also required to analyse the electrical field potential of IDCs [31]. The electrostatic AC/DC module available in COMSOL multiphysics can assist in finite-elementanalysis (FEA). The physics interface solves Gauss law for the electric field potential using the scalar electric potential variable along with charge conservation according to Gauss’ law for the electric displacement field. Also, it provides an interface for defining the constitutive relation and its associated properties such as the relative permittivity [31, 32]. The ordinary differential equations (ODE) used for solving the electrostatic model of IDCs are given below. E = −∇V
(1)
∇.(0 r E) = ρv
(2)
Figure 5 shows the three-dimensional (3D) structure of a Gold (Au) IDCs created in COMSOL. The voltage across the IDC can be mathematically expressed as VC = IC ZP
(3)
where I C is the steady current flowing through the MIDE based sensor. The change in voltage across the MIDE can be expressed as V C = IC Z P
(4)
Figure 6 shows the 3D Multislice electric potential plot of the IDC.
Fig. 5 The structure of IDC based OFET. a 3D view showing the substrate, oxide layer, source-drain contacts and IDCs. b Top view showing the source-drain contacts with IDC between them
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3 Fabrication of OFET with IDC in the Channel The fabrication process of an OFET involves a host of activities including (1) Wafer cleaning, (2) Dicing of the wafer into small substrate devices, (3) Geometrical patterning of the substrates, (2) Photolithography, (3) Deposition of source-drain IDCs, (4) Preparation of organic material (active layer), (5) Solution processing, (6) Surface treatment of the substrate and IDCs, (6) Deposition of the organic material (spin coating), (7) electrical characterisation of the OFET [33–35]. To avoid the complex substrate patterning and photolithography stages, prepatterned and evaporated IDC-based OFET chips can be purchased from Ossila (organic electronic scientists) who provide a wide variety of components, equipment and materials for enabling high-level of scientific research [36]. Prefabricated OFET Chips Ossila has developed high-density, prefabricated OFET chips with thermally evaporated gold (Au) IDCs [37]. Figure 2 shows the geometrical structure of IDC and Table 2 enumerates the individual details and dimensions, of the prefabricated OFET substrate (Fig. 7). Platinum OFET Chips Ossila developed a new range of robust and reusable platinum OFET chips patterned using photolithography and sputtering of titanium adhesion layer to provide extremely robust contact [38]. Table 3 enumerates the individual details and dimensions, of the prefabricated OFET substrate. It allows harsh cleaning procedures using solvent sonification, plasma etching and swabbing. Figures 5 and 8. Interdigitated ITO Substrates for OFET and Biosensing Ossila pre-patterned Indium Tin Oxide (ITO) OFET and sensing substrates consisting of interdigitated fingers to act as the source and drain electrodes. The substrate is made of high-quality soda-lime float glass with a 20 nm coating of SiO2 . The transparent Table 2 The geometrical details of the interdigitated electrodes 18 mm × 50 μm constant channel length substrate (S233)
Table 3 The geometrical details of the interdigitated electrodes 22.6 × 5 μm constant channel length substrate (S411)
Geometry
Interdigitated
Arrangement
20 identical OFETs
Channel width
18 mm
Channel length
50 μm
Geometry
Interdigitated
Arrangement
20 identical OFETs
Channel width
22.6 mm
Channel length
5 μm
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N. K. Sodavaram and S. C. Mukhopadhyay
Fig. 6 3D Multislice plot of IDC based OFET
nature of the ITO supports optoelectronic experiments including photoconductivity, photo-induced doping-based sensing. OFET can be fabricated by simply depositing the organic material (semiconductor) on the purchased ITO substrate [39].
3.1 Wafer Cleaning and Back Gate Deposition The fabrication of OFET always emanates with the choice of the wafer. A wide range of substrate wafers are used in the fabrication including silicon, polyimide (Kapton), flexible polymeric substrates like the indium tin oxide coated polyethylene terephthalate (ITO coated PET), etc. The OFETs are commonly fabricated at the device level with a back gate (BG) and bottom contact (BC) configuration. Therefore, the wafer needs a back gate deposition followed by dicing before the actual fabrication commences. The process involves (a) immersing the wafer into acetone followed by rinsing in IPA, (2) protection of smooth surface side using a thin layer of photoresist and PDMS, (3) Gold evaporation on the rough surface, (4) Dicing of the wafer into small substrates. Figure 9a shows the silicon wafer protected with a thin layer of photoresist and PDMS. The protection is achieved by spin coating the AZ1518 photoresist and polydimethylsiloxane (PDMS) solution 10:1 with the curing agent (b) shows the wafer with Chrome(Cr)/Gold(Au) back gate. The back gate is achieved by thermal evaporation of Cr/Au electrode using Angstrom thermal evaporator.
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Fig. 7 The photograph of prefabricated OFET chips. a the geometry of the interdigitated electrodes, b top view of the chip. Taken from the Ossila website [37]
Fig. 8 The photograph of the platinum OFET chips, a the geometry of the interdigitated electrodes, b the top view of the chip. Taken from ossila website [38]
Fig. 9 a The photograph of a silicon wafer coated with a thin layer of AZ1518 photoresist and PDMS; b back gated silicon wafer via thermal evaporation of chrome (Cr)/Gold (Au)
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Fig. 10 The photograph of silicon substrates after dicing
3.2 Wafer Dicing Wafer dicing is a process of cutting thin silicon wafers into small substrates that involve mechanical sawing using a laser or a diamond scriber. Figure 10 shows the diced substrates [40].
3.3 Photomask Design and Patterning Geometrical patterning of a substrate is an essential part of fabricating OFET that helps in the lithography and deposition stages of metal IDCs. The patterning of substrates can be realised by designing a custom-made photomask, photolithography and thermal evaporation. Patterning via Custom Photomask Photomasking is a process, where a computer-aided geometry is transferred to a thin layer of fused silica substrate (photomask). The standard photomasks use chrome as the absorption material. The transparent image developed on the photomask is the master template and is transferred onto a substrate via contact mask aligner (MJB3). The custom photomask would be valuable for applications that require specific geometrical and spacing (length and width) between the IDC source and drains. A custom photomask can be designed using the layout editor software [41]. The photomask geometrical design considerations depend on the various parameters, which include wafer size, die size, device minimum feature size, layout grid, manufacturing grid, floor planning, etc. Figure 11 shows the mask of the designed source-drain and IDCs using the layout editor software. Almost all the layout editors enable to export the mask pattern to GDSII file format which will be needed for developing a chrome or glass-based photomask.
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Fig. 11 The source-drain and IDC mask designed using the layout editor
3.4 OFET Device Fabrication using Photolithography Photolithography (aka optical lithography) is a process that involves the transferring of geometric patterns onto the substrates using a custom-designed photomask to a light-sensitive chemical photoresist on a diced device substrate. The general process includes substrate cleaning, Soft baking, photoresist deposition, thermal annealing, mask aligning, exposure and developing. Substrate Cleaning To obtain a good yield in the fabrication of OFET devices, initial substrate cleaning is a mandatory step, which helps in getting rid of organic residues on the surface of the substrate. Table 4 lists the cleaning procedure of silicon substrates. Applying Photoresist The photoresist is a light-sensitive material that varies its chemical and physical properties when exposed to the light. Photoresist also assists in transferring the geometrical pattern onto the diced device substrates. To obtain good evaporation of a metal IDC, it is important to optimise the application of photoresist. AZ 1518 and AZ P4330 are more frequently employed in the photolithography process. Table 4 The cleaning process protocol
Procedure
Time
Process
Cleaning 1
1 min
Sonication in acetone
Cleaning 2
1 min
Sonication in IPA
Cleaning 3
5 min
Immersion in IPA
Blow-drying
Few minutes
Compressed gas
258 Table 5 The process parameters of the spin coating of AZ1518 photoresist
N. K. Sodavaram and S. C. Mukhopadhyay Process Spin coating
AZ 1518 Speed (RPM)
4000
Acceleration (RPM/s)
5800
Time (s)
60
Spin Coating Spin coating is the most common technique for most of the photoresists. The parameters that are vital in achieving good photolithography include spin speed and photoresist film thickness. The spin coating process should be able to dispense right amount on to the surface of the substrate and consists of four steps: (1) Applying the resist to the substrate, (2) Acceleration to the desired RPM, (3) Spinning at a constant RPM and, (4) Deceleration. Table 5 lists the recommended process parameters for the spin coating of AZ 1518 photoresist. Soft Baking The thin layer of photoresist obtained after spin coating contains some residual solvents that may introduce some built-in stresses caused by the shear forces during the spin coating process. Stress in the photoresist layer significantly impairs the quality of the pattern transfer during mask aligning and developing stages. To remove the residual solvents, a soft baking step is involved before the mask aligning and exposure. Prebaking ensures that the resist film has uniform properties both across the wafer and from wafer to wafer in a lot. Table 6 lists the parameters for the soft baking process. Mask Alignment and Exposure In the mask alignment stage (SUSS MJB3 mask aligner), the actual pattern transfer is transferred from the photomask to the photoresist coated substrate by the polymerisation of the selected areas of photo-resist. This is achieved by repeatedly aligning the mask to a pattern and exposing the selected area of photo resist-substrate to ultraviolet light through the mask. As per the procedure, the custom photomask should first be loaded into the machine. Then the substrate must be placed and glued on to the chunk. At this point, the substrate must be moved up to get in contact with the mask by manoeuvring the contact lever counterclockwise until the contact light on the front panel illuminates. When a satisfactory contact alignment has been achieved, the exposure time must be set to initiate the exposure. The important parameters that help to achieve better IDCs on the substrate are the contact mode and exposure time. The exposure time can be calculated by the Table 6 The parameters for the soft baking process after spin coating of AZ1518 photoresist
Process Soft baking
AZ 1518 Temperature
100 °C
Time (s)
180
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Table 7 Process parameters for mask alignment and pattern transfer Process
AZ1 1518
Mask alignment Contact
Tight contact between the photomask and the substrate (as close as possible for thin structures)
Exposure time (s) 90
following expression mJ Photoresist specific dose cm 2 Exposure time(s) = U V light intesnsity mW cm2
(5)
where the photoresist specific dose is normally provided by the photoresist developers and UV light intensity is calibrated on SUSS MJB3 mask aligner. The table lists the optimised mask alignment and exposure parameters. Table 7 shows the process parameters for mask alignment. Development After the geometrical patterns are transferred to the photoresist that is applied to the substrate, it needs to be developed to produce the final three-dimensional pattern structures. The developing process is the most important step and ascertains the final the quality of IDC metal evaporation or deposition. AZ 351 B is the general; purpose developer used in the development stage. The developed needs to be diluted with De ionised (DI) water in 1:4 ratio. The process involved in the developing includes submerging each substrate in the diluted developer solution and agitating for 45 s followed by submerging and agitation in DI water for 60 s. After the structures are visible clearly, blow-dry the substrates using compressed air. Table 8 lists the process parameters for developing three-dimensional pattern structures. Inspection To determine the quality of the transfer, from the photomask image to the threedimensional structures, an optical microscope is employed and inspected at 40 to 100×. The pattern structures are inspected for (1) underexposure, where the pattern is incompletely transferred, (2) overexposure, where the features formed are wider and larger, (3) overdevelopment, where too much photoresist has been removed from the edges. If the quality of the three-dimensional structures is of good quality, Table 8 Process parameters for the development after pattern transfer Process
AZ1 1518
Development AZ 351 developer in DI water (1:4) agitation time (s) 45 DI water agitation time
60
Blow-drying
Nitrogen compressed air
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the substrates must be prepared for loading into thermal evaporator for metal IDC deposition. Figures 12 and 13 shows one of the source-drain electrodes and 3 μm channel. Thermal Evaporation (Deposition) of IDC In general, the thermal evaporation is realized using Angstrom Engineering thermal and electron beam evaporator. The thermal evaporation is conducted in a vacuum chamber and the chamber is usually pumped down to a base pressure of 2 × 10–6 mbar. After the chamber reaches the base pressure, the substrates are loaded onto the substrate holder. A chromium adhesion layer and gold (Au) crystals are loaded on to the two boats inside the chamber. The thickness achievable via thermal evaporation include 5 nm chromium and 50 nm gold. Lift-Off In the thermal evaporation, the Cr/Au metal is deposited all over the substrate and only desired patterns of IDC with channels are needed. There Lift-off process is employed to release the final IDC structure via a wet etching process. In general, acetone is used as the solvent for lift-off. The procedure involves soaking the substrates in acetone for thirty minutes followed by slight agitation or sonification for 30 s.
Fig. 12 The image of a 3 μm channel on OFET showing the source-drain electrodes
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Fig. 13 The image of silicon substrates after the lift-off process
3.5 Solution Processing and Deposition of the Organic Material (P3HT) Before, the deposition (spin coating) of the organic material, surface treatment is essential for improving the charge transport in the organic material that occurs in the dew monolayers near the interface between the organic material and oxide layer. Also, molecular parameters of the organic material must be modified by controlling the regioregularity, molecular weight, side-chain length and doping level along with circumventing the contact resistance that impairs the OFET performance. Selfassembled monolayers (SAMs) are good candidates for effective surface treatment due to their high-packing density, being only a few nm thick and allowing interface control with end-functional groups. Among various SAMs with different binding groups, such as carboxyl groups, thiols and silanes, phosphonic acid self-assembled monolayers (PA-SAMs) have attracted attention due to readily assembling on activated metal oxides because their reaction is not limited by the contents of surface hydroxyl groups and supplies their hydroxyl moieties [42]. Surface Treatment The first surface modification is the 2,3,4,5,6-pentafluorothiophenol (PFBT) treatment of Cr/Au IDCs, where the substrates are plasma-treated using oxygen for 30 s at 100 W followed by immersing Substrates immersed in 2.5 mMol/l solution of PFBT in IPA at room temperature [43]. The second surface modification is the Octadecyltrichlorosilane (OTS) treatment of oxide (dielectric) layer [44]. The OTS surface treatment is steered inside a nitrogen glove box and the process involves the following.
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(1) A solution of OTS (25 μL) is mixed in cyclohexane (anhydrous grade 1 mil). (2) 50 ml of cyclohexane is poured into an annealing beaker along with adding OTS solution prepared earlier to obtain a final solution of 60 ml with OTS at a concentration of 1 mMol/l. (3) The substrates are immersed in the above solution for 20 min followed by rinsing in cyclohexane and blow-dry. Solution Preparation As an example, pentacene has been used as the organic semiconducting material and the process is compatible with most of the polymeric materials. The following is the process for preparing the pentacene solution [45, 46]. (1) A 5 mg/ml 13,6-N-sulfinylacetamidopentacene precursor is dissolved in a vial consisting of anhydrous chloroform: Trichloronbenzene (99:1). (2) The vial is placed on a hot plate (70 °C) with a stirrer bar for 30 min. (3) The solution is allowed to cooled down to room temperature and then filtered with a 0.45 μm PTFE (hydrophobic) filter. (4) The solution is stored overnight on a hot plate at 30 °C to prevent excessive aggregation of the pentacene molecules. Spin Coating The pentacene solution is then deposited onto the substrate via spin coating and drop-casting inside a nitrogen glovebox. (1) 30 μl pentacene solution is dropped in the middle of the substrate loaded onto the spin coater. (2) The substrates are spun at a speed of 1000 RPM for 10 s followed by 2000 RPM for 60 s. (3) Substrates annealed at 90 °C for 30 min.
3.6 Electrical Characterisation of OFET Steady-state drain-source voltage (Vds) and drain current (ID) measurements were performed at room temperature using an Agilent 4156 C parametric analyzer with two source-measure units. All measurements were performed at a scan rate of 1 V/s an under a nitrogen glovebox atmosphere with 1, where N is the number of reflector fingers, and rs is the reflection coefficient of a finger. Typically, |rs| is about 2% and N is 200 or more [18]. A one-port SAW resonator can also be made by using a large number of IDT fingers without reflectors. In this device, multiple reflections within the IDT lead to standing waves and the device resonates at a particular frequency. In the case of the two-port resonator, a set of reflectors is fabricated on each outer side of the pair of adjacent IDTs. Two-port resonators are used in high stability oscillators [18]. The conventional SAW devices are discussed in detail and simulated based on a finite element simulation method (FEM) using COMSOL Multiphysics [14] as below.
356
B. Behera
5 Finite Element Method (FEM) The finite element method (FEM) is a numerical technique that provides approximate solutions to the governing differential or integral equations of a complicated system through a discretization process [24, 25]. FEM is used to solve the problems of engineering disciplines such as the areas of stress/strain analysis of solid structures, heat conduction analysis, and fluid dynamics. The domain of the system (physical/mathematical) can be defined or subject to frequent changes (moving boundary problems such as transient-free surface water flow, large deformation problems, etc.) [25].
6 Results and Discussions for SAW Resonators The results of the simulation of conventional SAW resonator are shown in Fig. 4. The total displacement profile, x-displacement profile, and y-displacement profile of the resonator at the resonance frequency f r of 8.37 MHz are shown for substrate depth of about 3.75 λ. The resonance frequency of the resonator is identified as the frequency for which the susceptance crosses zero value. Figure 4a shows plot of total displacement as a function of normalized frequency and peak at the resonance frequency. The normalized frequency is expressed as η = 2 p f v0 , where, v0 = 3990 m/s is the free surface velocity of the substrate. The curves of harmonic admittance per period as a function of normalized frequency for conventional SAW resonator are shown in Fig. 4b. Figure 4b shows the closer view of the curve of harmonic admittance per period as a function of normalized frequency near the resonance frequency. In the case of the real device, it would be lower due to the finite aperture, attenuation, and damping. This simulation does not consider the attenuation or damping and assumes the infinite width of the aperture of IDT fingers in x 2 direction.
Fig. 4 FEM simulation of a SAW resonator, a plot for total displacement as a function of normalized frequency, b plot of harmonic admittance as a function of normalized frequency
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The free surface resonance frequency f 0 calculated from the Eigenmode analysis of the piezo substrate is 8.37 MHz. The resonance frequency is affected by the mechanical and electrical properties as mass loading, and conductivity of the metallic IDT fabricated on the piezo substrate effects SAW phase velocity and it requires consideration of these factors while designing [19, 26]. The quality factor Qr at the resonance frequency of the convention SAW resonators is calculated from Fig. 4b. The expression for quality factor is given as [15, 27] Qr =
fr f
(4)
where, f is the bandwidth at half of the peak conductance [15, 27] (see Fig. 4b). The capacitance ratio which is a measure of the resonator performance is calculated from Fig. 4c. The capacitance ratio γ is expressed as [15] γ =
fr2 f a2 − fr2
(5)
where f a is anti-resonance frequency (see Fig. 4c). The capacitance ratio for the conventional SAW resonator computed from the simulation is 28.
7 Simulation of One-Port SAW Resonator Based on FEM in 3D In this section, a conventional SAW resonator with a finite aperture having an infinite number of IDT fingers with a simplified model is simulated. For 3D simulation, a piezo solid application mode of COMSOL Multiphysics is used. The simulation is carried out taking a half wavelength consisting of a single electrode of antiperiodic IDT fingers is used. The dimensions used for 3D simulation are the same as 2D simulation except for the depth of piezo-substrate hs and aperture W. The depth of piezo-substrate is truncated to 5 λ since SAW energy concentrates near the substrate depth of one wavelength (Fig. 5). The simplified model is used to reduce the number of nodes and reduce computation cost. The bottom surface of the substrate is fixed and all other boundaries are stress-free. It is possible by modeling a thin strip of a thickness of W in x 2 direction and applying zero displacement constraint in the x 2 direction on both side boundaries normal to the direction of wave propagation. Rayleigh SAW has no variation and no component of displacement vectors in thex 2 direction [28]. The antiperiodic boundary condition is applied to the left (Γ L ) and right (Γ R ) sides of the periodic section. The Eigenmode analysis is performed to compute the resonance frequency of the SAW resonator.
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B. Behera
Fig. 5 Displacement profiles at resonance frequency 8.282835 MHz, a total displacement profile, b x displacement profile with a deformed shape, c y displacement profile with the deformed shape. Note For simplicity, the substrate length shown in the Figure is 2 λ
The resonance frequency is identified from the list of Eigenmode frequencies and their displacement amplitude, the mode of vibration, and the charge distribution on the IDT fingers are studied. At the resonance frequency, the displacement is maximum between the fingers of the resonator while at anti-resonance frequency the displacement is maximum in the middle of the finger. The charge distribution is symmetry and antisymmetric at resonance and antiresonance frequencies.
8 Simulation of a Conventional SAW Delay Line The conventional SAW delay line device has been simulated using FEM by many researchers [29–31]. In this section, a conventional SAW delay line device is simulated to compare the simulation results with the proposed SAW delay line device configuration described.
9 Simulation Methodology A SAW delay line device with a delay of 3 λ (λ = 1200 μm) is simulated by FEM using COMSOL Multiphysics. In this simulation, three pairs of IDT fingers for transmitter IDT and receiver IDT fabricated at the two ends of the piezo substrate are considered. The dimensions used for simulations are as follows: electrode width (d) 100 μm, electrode pitch (p) 200 μm, depth of the piezo substrate 400 μm (1 λ), and thickness of IDT fingers 0.2 μm [32]. YX LiNbO3 piezoelectric material is used as a piezo substrate and aluminum metal is used as IDT electrodes. 3D geometry of the SAW delay line device used for simulation is shown in Fig. 6. The following boundary conditions are applied to the model.
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Fig. 6 Results of simulation of a conventional SAW delay line device, a total displacement profile at time 10 ns
The top surface of the substrate is assumed stress-free and the bottom surface is fixed in its position. The critical damping is assumed at the edge of the transmitter BL , receiver BR , and bottom of the substrate BB to avoid reflections of the acoustic waves. The alternate fingers are shorted and 1 V sinusoidal driven voltage of its resonance frequency is applied. The resonance frequency is about 8.37 MHz. An optimized mesh density is used for the simulation. To analyze the propagation of SAW over the delay line, transient analysis is performed using direct solver SPOOLS available in COMSOL Multiphysics [33] with the time interval of 10 ns for a duration up to 1 μs. The displacements and potential at the receiver electrode are recorded at every instant. The transient analysis of the SAW delay line device is performed for the time duration of 1 μs. Figure 6 shows the total displacement profile of the SAW delay line device at time 1 μs. The output electrical potential, x displacement, and y displacement are measured at the receiver IDT electrodes. The plots of output potential, x displacement and y displacement as a function of time are shown in Fig. 7a, b. The output electric potential of 0.3 V is obtained at the receiver IDT electrodes. In the SAW delay line device, the delay time is one of the important parameters. The delay time calculated from the free surface velocity of 3478 m/s is 1 μs. x displacement and y displacement of about 6 nm and 6 nm are obtained at time 1 μs.
10 Dual Friction-Drive (DFD) SAW Motor The proposed SAW motor which uses the dual friction-drive (DFD) concept made up of two identical Lithium Niobate stators placed mirror-image manner and a cubical structured slider placed in between them. The stators are attached to glass substrates for support to protect damage and uniform preload to the system as shown in Fig. 8.
Translational displacement of a point on stator (nm)
Fig. 7 Results of simulation of a conventional SAW delay line device, a displacement of the particle in the tangential direction, b displacement of the particle in the normal direction
B. Behera Normal displacement of a point on stator (nm)
360 3.5 2.5 1.5 0.5 -0.5 0 -1.5
0.5
1
1.5
-2.5 -3.5
(a) Time (μs)
5 3 1 -1 0
0.5
1
1.5
-3 -5
(b) Time (μs)
Fig. 8 Schematic of a DFD SAW motor with cuboid slider [34]
The proposed DFD SAW motor able to avoid the disadvantages associated with the conventional SAW motor, the slider is driven with double force, as well as impactfully simplifying the motor arrangement. The stator is made of a 128° rotated Y cut X propagated Lithium Niobate piezoelectric material generating Rayleigh SAW with high coupling coefficient and IDTs are fabricated at both ends. The IDT is made of aluminum electrodes fabricated in a comb-shaped structure with bond pads to facilitate the electrical connections. Preferably the slider is made of silicon material and cuboid in shape. The spacers help to maintain the gap and alignment between the stators.
Development of Dual-Friction Drive …
361 Preload
Fig. 9 Schematic showing SAW motor implementing the dual friction-drive technique with slider having no projections [37]
Piezoelectric stator
Motion of slider
Slider
Propagation of SAW
Piezoelectric stator
11 Principle of Operation of DFD SAW Motor The principle operation of the proposed DFD SAW motor is based on the Hertz contact theory [35]. As represented in Fig. 8, when a sinusoidal potential is applied to IDT1 and IDT3 of the left side of the top and bottom stators as shown in Fig. 8, it generates SAWs that propagate in horizontal-direction on the surfaces depicted in Fig. 9. The points on the surface of the top stator make clockwise elliptical motion about their mean position while the points on the surface of the bottom stator make anticlockwise elliptical motion. The slider moves in the direction of motion of the points due to the transfer of velocity of the surface component through frictional force [8, 36]. When the potential is applied to IDT2 and IDT4 placed at the right side of the motor, the direction of motion of the slider will be in the opposite direction. Finite element simulation provides an appropriate way to understand the insight operation of the motor.
12 Finite Element (FE) Simulation of DFD SAW Motor The three-dimensional geometry is taken up to carry out Finite element simulation of the proposed SAW motor in COMSOL Multiphysics. Both piezoelectric and solid mechanics modules are coupled to execute the physics of the motor. The delay line made by taking on an LN substrate of width 400 μm (1 λ), length 2000 μm (5 λ) and height 800 μm (2 λ) and placing IDT of the thickness of 0.2 μm, width 100 μm (λ/4), aperture 400 μm (1 λ), and having an array of 6 fingers. A silicon slider is placed in the active region having a length of 400 μm and width 400 μm as shown in Fig. 10. When it comes to simulation of any model the domain setting of COMSOL Multiphysics, it plays a crucial role. The piezoelectric element is assigned to the stator, and linear elements are assigned to IDTs and sliders. The properties of Lithium Niobate such as coupling coefficients, elastic coefficients, relative permittivity, Poisson’s ratio, Young’s modulus, and density [38] and are listed in Table 1. Due to the high
362
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Fig. 10 Geometry of the DFD SAW motor used in the simulation
Stator2 PML
PML
IDT3
Projections
Slider
IDT4
IDT2
IDT1
PML
PML
Stator1 z
x
Y
Table 1 Selected parameters applied to the settings of the domains for simulation
Sl. No
Parameter
Symbol
Value 8.28 MHz
1
Resonance frequency applied
f
2
Preload
Fn
2.63 mN
3
Static coefficient of friction
μs
0.45
4
Dynamic coefficient of friction
μd
0.15
5
Young’s modulus slider
E1
169 GPa
6
Poisson’s ratio slider
ν1
0.3
7
Young’s modulus stator
E2
173 GPa
8
Poisson’s ratio stator
ν2
0.345
conductive, low cost, and lightweight properties of the aluminum (Al), it is used for IDTs formation while Silicon is assigned to the slider. Perfect matching layers (PML) are applied to the boundaries of the SAW devices to absorb unutilized waves and avoid reflection of waves [39]. To keep the slider in contact with the stators, an adequate amount of preload of 2.63 mN is applied to the assembly. The piezoelectric stator and the silicon slider create a contact pair where the stator is playing the role of the master which will drive and the slider plays the role of a slave which will be driven by the master. The contact surface between the stator and slider is assigned with a dynamic coefficient of friction of 0.15 to match up with the atmospheric conditions. To analyze the structure, the whole structure needs to be divided into several small elements which are called meshing. Here for this structure is divided into triangularshaped meshing with swept meshing for all the domains to cover up the interaction portion perfectly and error-free analysis of the physics of the model [25].
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13 Results and Discussion
Fig. 12 Graph for the tangential force impacted on the surface of the slider
Force on the slider (mN)
Fig. 11 Simulated result for the displacement in the normal direction of the slider
Normal velocity of the slider (m/s)
The simulation is carried out with an application of excitation voltage of 150 V and resonance frequency of 8.28 MHz. The reported literature conveys that a SAW motor has a dead zone typically below 30 Vpeak where the slider unable to make any motion [40]. When a potential of 150 V is applied to the stator surface, it makes displacement both in normal and translational directions and can be detected by points on the surface of 10 nm and 16 nm, respectively. The displacement in normal direction initially deforms a lot but as the time progresses it diminishes and becomes negligible as shown in Fig. 11. The mechanism of friction-drive at the interface area of the stator and slider experiences two states i.e. stick and slip zones [41] in each cycle of the Rayleigh wave. The slider experiences stick conditions both at the trough and crest of the SAW wave and the contact point exerts a tangential force on the slider [28] which forces to move the slider. As per the Hertz contact theory [35], Fig. 12 shows the tangential force on the slider at the crest moves the slider in the direction opposite to the direction of wave propagation. The motion of the slider is opposed by the tangential force at the trough but as at the crest generates much greater force than that at the trough, the motion of the slider is least affected [40]. Other than this 0.006 0.004 0.002 -2E-17 0
2
4
6
8
10
-0.002 -0.004 -0.006 -0.008
3.5 3 2.5 2 1.5 1 0.5 0 -0.5 0 -1
Time (μs)
0.5
1
Time (μs)
1.5
2
364
B. Behera
activity, the rest of the time of the propagation of the wave, the slider experiences slip condition which causes loss in frictional force, and thrust is not produced. Figure 13 shows the snapshot of the motion of the slider during the simulation. The slider displaces a distance of 0.26 μm at end of 10 μs in a horizontal direction. The achieved motion occurs with the application of potential 150 V in a continuouswave excitation manner to both stators without any difference in phase. Figure 14 represented a magnified view of the motion of the slider for excitation of 150 V with step incremental motion. Three different voltages viz. 100, 150, and 180 V are applied to check the variation in motion of the slider. Figure 15 shows the motion of the slider of displacement of
Fig. 14 The stepwise motion of the slider for the application of excitation of 150 V
Displacement of the slider (nm)
Fig. 13 Translational displacement of 0.25 μm of the slider at the end of 10 μs
72 70 68 66 64 62 60 58 56 54 52
4
4.1
4.2
4.3
Time (μs)
4.4
4.5
Development of Dual-Friction Drive … 100 V
Displacement of the slider (μm)
Fig. 15 Translational displacement of the slider for the application of three different voltages
365 150 V
180 V
0.35 0.3 0.25 0.2 0.15 0.1 0.05 3E-16 -0.05
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0.35 μm, 0.26 μm, and 0.1 μm for the application of 180 V, 150 V, and 100 V respectively at the end of 10 μs. Figure 16 shows the results of the simulation for the translational motion of the slider with a continuous excitation wave along the horizontal direction. Thus, the slider can make a translational motion in both forward and reverse directions along the horizontal axis. When continuous Rayleigh wave propagates under the slider, the motion of the slider picks to movement at a constant speed of motion due to the inertia of motion which converts the stepwise motion to continuous motion. Figure 17 shows a comparFig. 16 Steady-state velocity of the slider at the end of 0.02 s
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Fig. 17 Comparison between conventional and DFD SAW motor with projections
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ative simulation result for the movement of the slider in conventional SAW motor and Proposed DFD motor. The slider in the proposed DFD SAW motor makes a displacement of around 1.75 μm as compare to the conventional SAW motor where it makes around 1 μm movement. The proposed DFD motor can be utilized to drive an external load such as micromirrors, small screws, etc.
14 Conclusions This chapter presents piezoelectricity, the equation of motion, and the solution to surface waves in piezoelectric media. Simulations based on FEM using COMSOL Multiphysics to determine the free surface SAW phase velocity and adequate mesh density for the simulation are performed. Simulation of one-port SAW resonator is done so that the results will be used to compare the proposed DFD SAW device configuration. To find out the delay time and attenuation in the output electric potential, the Simulation of the SAW delay line is carried out. The device parameters such as velocity dispersion, reflection coefficient, and effective permittivity as a function of the metallization ratio are presented. The basic design of SAW motor has to be optimized with the help of modeling techniques. The proposed DFD motor leads to an extraordinarily compact and less weight structure. The FEM simulation of the SAW motor is performed and presented to explain the operation of DFD SAW motor. The forces acting on the surface of the cubical slider and the subsequent displacement and velocity of the slider are studied. The displacement of 0.1, 0.26, and 0.35 μm for the application of 100, 150, and 180 V of the slider is observed at the end of 10 μs. Finally the comparative simulation study of a conventional SAW motor and proposed DFD SAW motor is presented.
References 1. T. Morita, Review on miniature piezoelectric motor. Elsevier Sens. Actuators Phys. 103, 291– 300 (2003) 2. B. Behera, H.B. Nemade, Recent developments of piezoelectric motors with diverse operating principles. ISSS J. Micro Smart Syst. 1–13 (2017) 3. B. Behera, Design and investigation of a dual-friction drive based LiNbO3 piezoelectric actuator employing a cylindrical shaft as slider. IEEE Sens. J. 19(24), 1–1 (2019) 4. M.K. Kurosawa, Ultrasonic linear motor using traveling surface acoustic wave, in Proceedings of IEEE Ultrasonics Symposium, 2009, pp. 1096–1105 5. K. Uchino, Piezoelectric ultrasonic motors: overview. Smart Mater. Struct. 7(3), 273–285 (1998) 6. T. Shigematsu, M.K. Kurosawa, K. Asai, Sub-nanometer stepping drive of surface acoustic wave motor, in Third IEEE Conference on Nanotechnology, 2003, pp. 299–302 7. Y. Nakamura, M.K. Kurosawa, T. Shigematsu, Effects of ceramic thin film coating on friction surfaces for surface acoustic wave linear motor, in IEEE Ultrasonics Symposium, 2003, pp. 1766–1769
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8. T. Morita, M.K. Kurosawa, T. Higuchi, Simulation of surface acoustic wave motor with spherical slider. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 46(4), 929–934 (1999) 9. Y. Kusminov, Lithium Niobate Crystals (Cambridge International Science Publishing, 1997) 10. A.V. Mamishev, K.S. Rajan, F. Yang, Y. Du, M. Zahn, Interdigital Sensors and Transducers. Proc. IEEE 92(5), 808–845 (2004) 11. K. Uchino, Advanced Piezoelectric Materials Science and Technology, 1st edn. (Woodhead Publishing Limited, New Delhi, 2010) 12. T. Shigematsu, M.K. Kurosawa, K. Asai, Nanometer stepping drives of surface acoustic wave motor. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 50(4), 376–385 (2003) 13. H. Gu, D. Ma, S. Zhang, L. Cheng, X. Shui, Theoretical analysis of non contact linear motors driven by surface acoustic waves, in Proceedings of the IEEE, 2008, pp. 3–6 14. D. Royer, E. Dieulesaint, Elastic Waves in Solids II, 1st edn. (Springer, New York, 1999) 15. K. Hashimoto, Surface Acoustic Wave Devices in Telecommunications Modelling and Simulation, 1st edn. (Springer, Chiba, Japan, 2000) 16. C.C.W. Ruppel, T.A. Fieldly, Advances in Surface Acoustic Wave Technology, Systems and Applications, vol. I (World Scientific Publishing Co. Pte. Ltd., 2001) 17. B.A. Auld, Acoustic Fields and Waves in Solids, vol. II, 1st edn. (Wiley, Canada, 1973) 18. D. Morgan, Surface Acoustic Wave Filters With Applications to Electronic Communications and Signal Processing, 2nd edn. (Elsevier Academics Press, Oxford, 2007) 19. D. Royer, E. Dieulesaint, Elastic Waves in Solids: Free and Guided Propagation, vol. I, 1st edn. (Springer, Northampton, England, 1996) 20. M. Thompson, Surface-Launched Acoustic Wave Sensors : Chemical Sensing and Thin-Film Characterization (Wiley, 1997) 21. D. Royer, Elastic Waves in solids, 1st edn. (Springer, France, 1996) 22. B. Behera, H.B. Nemade, Investigating translational motion of a dual friction-drive surface acoustic wave motor through modeling and finite element simulation. Simul. Trans. Soc. Model. Simul. Int. 1–9 (2018) 23. B. Behera, H.B. Nemade, Modelling and finite element simulation of a surface acoustic wave driven linear motor. Procedia Eng. 144, 1411–1418 (2016) 24. V.K. Varadan, K.J. Vinoy, S. Gopalakrishnan, Smart Material Systems and MEMS : Design and Development Methodologies, 1st edn. (Wiley, England, 2006) 25. D.S.H. Lo, Finite Element Mesh Generation, 1st edn. (CRC Press, New York, 2015) 26. C.S. Hartmann, D.T. Jr. Bell, R.C. Rosenfeld, Impulse model design of acoustic surface-wave filters. IEEE Trans. Microw. Theory Tech.21(4), 14 (1973) 27. J. Koskela, V.P. Plessky, M.M. Salomaa, SAW/LSAW COM parameter extraction from computer experiments with harmonic admittance of a periodic array of electrodes. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 46(4), 806–816 (1999) 28. M.K. Kurosawa, T. Shigematsu, Friction drive simulation of a surface acoustic wave motor, in Proceedings of Ens’07, 2007, no. December, pp. 8–13 29. M.Z. Atashbar, B.J. Bazuin, M. Simpeh, S. Krishnamurthy, 3D FE simulation of H2 SAW gas sensor. Sens. Actuators B. Chem. 112, 213–218 (2005) 30. N. Ramakrishnan, A.K. Namdeo, H.B. Nemade, R. Paily, Simplified model for FEM simulation of SAW delay line sensor. Eng. Prpcedia 41, 1022–1027 (2012) 31. Y.L. Rao, Nanostructure enhanced surface acoustic love wave devices for biosensing applications (2008) 32. W. Richard, H.M. Gerard, J.H. Collins, M. Reeder, H.J. Shaw, Design of surface wave delay lines with interdigital transducers. IEEE Trans. Microw. Theory Tech. 17(11), 9 (1969) 33. C. Multiphysics, M. Guide, COMSOL multiphysics modeling guide, in COMSOL Multiphysics, 2005, pp. 01–348 34. B. Behera, H.B. Nemade, S. Trivedi, Modelling and finite element simulation of a dual frictiondrive SAW motor using flat slider, in IEEE International Ultrasonics Symposium, 2016, pp. 1–4 35. K.L. Johnson, Contact Mechanics (Cambridge University Press, 1, 1985). 36. B. Behera, H.B. Nemade, Dual friction-drive SAW motor utilizing cylindrical shaft as external load driver. Ferroelectr. Lett. Sect. 45(1–3), 8–13 (2018)
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37. B. Behera, H.B. Nemade, Finite element simulation of a saw motor based on dual friction-drive. Mater. Today Proc. 4(9), 9594–9599 (2017) 38. T. Shigematsu, M.K. Kurosawa, Friction Drive of an SAW motor. Part V: design criteria. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 55(10), 2288–2297 (2008) 39. S.J. Ippolito, K. Kalantar-Zadeh, D.A. Powell, W. Wlodarski, A 3-dimensional finite element approach for simulating acoustic wave propagation in layered SAW devices, in IEEE Ultrasonics Symposium, 2003, pp. 303–306 40. M.K. Kurosawa, T. Shigematsu, Friction drive simulation of a SAW motor with slider surface texture variation. Adv. Sci. Technol. 54, 366–371 (2008) 41. T. Shigematsu, M.K. Kurosawa, Friction drive modeling of SAW motor using classical theory of contact mechanics, in 10th International Conference on New Actuators, 2006, no. June, pp. 444–447
Basudeba Behera received the Bachelor of Engineering in Electronics and Instrumentation Engineering and the Master of Technology in Electronics and Communication Engineering from GIET University, Odisha, India in 2006 and 2009 respectively. He completed his Ph.D. degree in the Department of Electronics and Electrical Engineering from the Indian Institute of Technology Guwahati (IITG), Assam, India in 2017. Currently, he is working as a full-time faculty member (Assistant Professor) at the National Institute of Technology Jamshedpur (NITJSR). He has been involved in research on Piezoelectric and SAW devices, Ultrasonic Motors, mostly in Modeling, simulation, and fabrication of the Sensors and Actuators.
Interdigital Sensor for IoT Applications M. Adhikary
Abstract Internet of Things (IoT) is the technological means for making wireless interconnection of multiple “smart” instruments feasible by employing radio frequency signals. Since day by day, the need for automated instruments is increasing with exponential growth, the new technologies supporting that feature are coming up. One main aspect of the interconnection of the instrument is the logic behind their interconnection. For example, a “smart room” is supposed to sense the ambient temperature and humidity of the room and respond to the same by controlling the temperature and humidity of the “smart air conditioning system” or the “smart fan”. Several mobile-based IoT applications like IFTTT (If This Then That) [1], etc. have come up in the market which can set the logic behind the operation of interconnected IoT devices. The fundamental building block of any smart system is the sensor. Since interdigital sensors have multiple benefits including, high sensitivity, wider tuning range, the feasibility of planar interconnection with other system modules, they are widely used in modern IoT devices capable of actuating the device upon sensing certain physical parameters. A generalized sensor is what is capable of sensing the dielectric constant of a substance or a substrate since in many passive sensor modules either the dielectric constant or the loss tangent is the main signifier of any physical change. However, to measure a passive sensor, expensive instruments such as Vector Network Analyzer, Signal Generator, Spectrum Analyzer, etc. are required. That is why there is a major necessity for stand-alone sensing systems that can measure some physical parameters and translate that into some electrical signals without the necessity of the expensive off-the-shelf instruments. The capability of the integrated system can be further extended to make it IoT compatible so that the measured data can be made available at cloud storage for real-time monitoring of the signal at distant locations also. With this technique, the cost of the proposed system can be cut down to a great extent. This chapter will give an overview of a kind of interdigital sensor-based system which can be potentially applied for monitoring of dielectric M. Adhikary (B) Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India e-mail: [email protected] Staff Systems Engineer, Maxlinear Inc., Bangalore, India © The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_15
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constant of a substrate, which transmits the sensor information at a distance utilizing IoT capability.
1 Introduction and Literature Review Over the years, the use of microwave material sensors has increased extensively in the field of chemical and medical industries due to their accuracy, compact size, lightweight, low cost, and easy planar design [2]. The basic principle of a microwave sensor is the change in transmission, reflection, and scattering characteristics of the sensor device when the microwave field of the sensor interacts with the material under test. These sensors are utilized to characterize the electrical properties of the materials such as permittivity, permeability, and conductivity. A significant improvement in the sensitivity of resonant type sensors has been observed in recent works over the non-resonant type sensors [3–6]. The measurement of these quantities is not that straightforward as these cannot be determined directly. Instead, special measurement techniques and numerical methods are employed to extract the permittivity out of the variations in transmission and reflection characteristics of the sensor caused by the material placed over the sensor. The modern microwave sensors for the material characterization are mostly based on Split Ring Resonator (SRR), Complementary Split Ring Resonator (CSRR), the Interdigital capacitor, etc. In recent years, various techniques have been employed for the realization of wireless and portable dielectric sensing systems, many of them are based on RF identification (RFID) scheme [7–9]. RFID is the use of radio waves to read and capture the information stored on the tag attached to the object. Wireless sensing of complex permittivity of liquids based on RFID is presented in [10]. A wireless sensing system is designed by integrating planer antennas at the two ends of the sensor which serves as tag antennas. Similar planer antennas are attached to the Vector Network Analyzer (VNA) port 1 and port 2 as Tx reader antenna and Rx reader antenna which couple the RF energy to the sensor and receives the energy from the sensor at other port respectively. Another approach of non-invasive testing of biological samples using a broadband wireless sensing system is presented in [11]. The system employed ultra-wideband transmitter–receiver antennas and planer sensors for the testing. However, the RF signal to excite the planers sensors in both [10, 11] is provided using Vector Network Analyzer (VNA). The presented systems are distance-dependent as increasing the distance between the reader and tag antennas affects the RF energy coupling. An application of facilitating the distant measurement of material permittivity, a negative resistance oscillator based active tag integrated antenna design is proposed in [12]. The exponential growth in wireless and mobile communication technologies in the last decade has resulted in the integration of one or more communication modules in almost every object around us. It has led the industries and academia to conduct a wide range of research and development to realize applications such as 5G, the Internet of Things (IoT) and smart skins (SS) that interconnect different objects
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with sensing and processing capabilities which can communicate with each other at high speed without human interaction [13–15]. IoT enabled interdigtal sensor related research is being widely carried out to perform various tasks including kidney health monitoring, Nitrate percentage in soil, biosensor that determines the stage of bone loss in patients, etc. With the growing world of interconnectivity and automation of things, objects, and devices, a wide range of industrial and academic research have been done to make the devices, equipment’s remotely accessible and to get the availability of collected data at a distant location for further analysis. In this work, an approach of integrating standalone Internet of Things (IoT) enabled RF Sensor system has been proposed, which measure the transmission coefficients of microwave material sensor which can be used to characterize the dielectric properties of materials by applying the curve fitting and some sophisticated artificial neural network-based algorithms on resonance frequency shift data for different materials loaded on the sensor. The calculated values of transmission coefficients are made available at internet cloud storage so that it could be accessed at any location. Various sub-components employed in the proposed system are designed, fabricated, and tested as described in the latter sections. The values of the calculated transmission coefficient of the sensor at different frequencies in the present situation have been plotted in real-time at the cloud storage, which can be accessed and analyzed at any location. Unlike conventional systems where it requires expensive measurement equipment for the characterization of a sensor, this standalone system can perform the same measurement with considerable accuracy and send the data to the cloud for remote monitoring and analysis.
2 System Design Principle The complete functional block diagram of the proposed IoT enabled automated system along with various sub-components chain is shown in Fig. 1. To facilitate the characterization of an RF sensor, the design of the proposed system combines various sub-components, software, and services that have been employed such as Oscillators, Rectifiers, power supply, Arduino Uno microcontroller, NodeMCU chip, Arduino IDE, cloud storage, etc. A. Role of Oscillator The role of oscillators is to provide a stable frequency RF signal output with a sufficient amount of RF power. Wilkinson power divider is integrated into both oscillators so that an equal amount of RF power signal could be taken as an output from two ports. A tunable negative resistance Voltage Controlled Oscillator (VCO) is designed and fabricated, as shown in Fig. 2, to be integrated into a broadband RF sensor system in which S21 of the sensor sample is plotted for a range of frequencies. In further stage to reduce the external load-pull effect on the oscillator performance (reduction of frequency tuning range) by the sensor and other loaded networks are
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Fig. 1 Simplified functional block diagram of the system
Fig. 2 Fabricated oscillator working as signal source
alleviated by using an isolator. Even though the isolator can somehow mitigate the load-pull effect, it is difficult to be integrated with standard planar circuitry and hence it is replaced in a later stage by close to unity gain buffer amplifier which is planar. B. Role of Rectifiers To convert RF power signal coming out of the tunable oscillator to corresponding DC voltage level, two similar broadband rectifiers using Villard Doubler topology [16] are designed as shown in Fig. 3 and fabricated which covers the complete range of VCO output signal frequencies. One converts the reference RF signal coming out of the oscillator to DC voltage and another to convert RF signal coming through the
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Fig. 3 Block diagram of the proposed broadband rectifier design showing impedance matching unit and Villard voltage doubler stage
Sample sensor to corresponding DC voltage. If transmission loss (S21 ) of the sample under test is negative at that frequency, then DC voltage termed as DC_out2 (Ref. to Fig. 1) will be less in magnitude due to less RF power being transferred from oscillator to rectifier. C. Role of Microcontroller The microcontroller is an integrated circuit that can be programmed for specific applications in an embedded system. There are various microcontrollers available such as Arduino Uno, Raspberry Pi, etc., which mainly differ in terms of the input/output pins, memory, processor, etc. In the present situation, the Arduino Uno has been used to implement the proposed integrated sensor system. The main role of Arduino here is to read the DC voltages provided at the output of rectifiers and accordingly calculate the magnitude of S21 of the material sensor in the dB scale. The computed S21 data of the material sensor are also sent to the NodeMCU Wi-Fi chip using this Arduino through serial communication to facilitate the sharing of sensor data at the cloud storage. Arduino Uno is programmed using Arduino IDE (Integrated Development Environment) software to read the voltages, to calculate the S21 , and to send data serially (Fig. 4). D. Wi-Fi Connectivity The proposed integrated RF sensor system is made IoT enabled by connecting the system with nearby Wi-Fi using the NodeMCU chip, which can be configured using the open-source platform. NodeMCU includes an ESP8266 System on Chip (SoC) developed by Espressif System, which can be programmed to connect with nearby Wi-Fi. The role of NodeMCU in the RF sensor system is to serially receive the real-time calculated values of S21 sent by the Arduino and share the received data to the internet through Wi-Fi. The NodeMCU here has also been programmed using the Arduino IDE software to receive the data serially, to make the connection with Wi-Fi, and to send the data at cloud storage for further processing (Fig. 5).
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Fig. 4 Arduni MCU (© Google)
Fig. 5 NodeMCU WiFi unit (© Google)
E. Cloud Storage Various online IoT platforms provide free channel storage for the Internet of Things (IoT) applications. Some of these are Microsoft Azure IoT Suite, Thingspeak IoT platform, Google cloud’s IoT platform, Cisco IoT cloud connect, etc. In this work, the Thingspeak IoT platform (Fig. 2) is utilized to collect and plot the calculated values of S21 at a distant location. Thingspeak gives access to a private channel in the cloud having a unique ID and Application Programming Interface (API) write key. Channel ID and API write key have been fed in the scratch Code burned in NodeMCU chip. Data Stored in the channel can be visualized in MATLAB and data can also be downloaded for further post-processing (Fig. 6). F. Microwave Material Sensor Microwave material sensors are widely used in material characterization industries. The main objective of the sensor system is to find the dielectric constant and loss tangent of the material under test. However, since many physical parameters are correlated with the dielectric constant of the sensing material under the effect of change in the corresponding physical parameters, it is obvious that they can in general be considered as generalized sensing system. Interdigital sensors are mostly used in dielectric characterization industry owing to their high sensitivity and wide tuning range. In this chapter, some modern design aspects of interdigital sensors will be
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Fig. 6 ThinkSpeak cloud platform (© Google)
Fig.7 IDCSRR sensor
discussed. The present sensor system in discussion uses a kind of interdigital complementary split ring resonator (IDCSRR) to enhance the sensitivity as shown in Fig. 7. Since, the objective of the chapter is to deal with interdigital system, further details are provided in the next section of the chapter. G. Buffer Amplifier For the purpose of making the system fully planar, the isolator can be replaced by using two identical unity gain buffer amplifiers on either side of the VCO output ports to reduce the external load-pull effect. The simulated performance of the proposed buffer amplifier and its effect on improving the matching of the reflection type CSRR sensor are shown in Fig. 8. H. Performance of the system for material sensing The complete system set up to measure the magnitude of S21 is designed using the scheme depicted in Fig. 9. Before calculating the values of S21 , the tuning range of Oscillator has been tested again with the help of signal analyzer after integrating the oscillator with sensor and rectifiers. It had been found that due to impedance mismatch provided by the sample sensor to the oscillator, the tuning range of the oscillator was affected adversely. The lowest and highest oscillator frequency after connecting the sensor at one of the ports of the oscillator was found to be 2.37 GHz and 2.44 GHz respectively. Initially, the S21 characterization of the sensor has been done
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Fig. 8 S-parameter responses of the standalone sensor and the sensor loaded with buffer amplifier, inset: simplified schematic of buffer
Fig. 9 Overall IoT sensor system with the IDCSRR sensor (shown under dashed box)
for the same frequency range 2.37 to 2.44 GHz, but tuning range of the oscillator has been improved with the use of an isolator. By varying the DC voltage across Varactor diode of the oscillator, the magnitude of S21 of the CSRR sensor has been calculated for all tuning range of VCO, and calculated values are being sent to the Thingspeak cloud for real-time plotting of the data. Figure 10 shows the plotted graph of S21
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Fig. 10 Real-time plot of the magnitude of S21 of a unloaded, b loaded CSRR sensor at cloud storage
values of the unloaded sensor with respect to time at which data was sent to the cloud. The S21 is calculated as the ratio of DCout2 to DCout1 . The look up table is generated for variation of oscillator frequencies with respect to reverse biased voltage applied so that it can be corresponded to frequency scale in Arduino real time serial plotter and to generate S21 data points versus frequency during post analysis. The Y-axis data has been downloaded in.CSV format from the website for further post-processing. Similarly, the same procedure has been followed for the CSRR sensor in the material loaded condition, as shown in Fig. 15. The material RT/Duroid 5880 of permittivity 2.2 and thickness 0.127 mm and loss tangent of 0.0009, has been placed over IDCSRR of the sensor so that shift in resonance frequency can be noticed using RF sensor system (Fig. 11).
Fig. 11 Curves of S21 magnitudes of the IDCSRR sensor with both loaded and unloaded conditions, calculated using the proposed IoT enabled sensor system as shown in Fig. 9
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3 Interdigital Split Ring and Complementary Split Ring Resonators In rectangular shaped split ring resonator (SRR), the maximum electric field is confined to the dielectric gap of the SRR at resonance, and it is used a sensing region for material characterization. Figure 12 shows the structure of a conventional rectangular SRR based planar microwave sensor and the electric field distribution. To improve the sensitivity, the SRR based dielectric sensor can accordingly be modified. The confinement of electric field in the gap of the SRR can be improved by increasing the effective capacitance of this gap, which can be achieved by maximizing the local area of the ring on both sides of the gap resulting into a capacitive loaded SRR structure as shown in Fig. 13a. Figure 13b shows the electric field of
Fig. 12 a Conventional split ring resonator, b electric field magnitude distribution [© 17]
Fig. 13 a Improved split ring resonator, b electric field magnitude distribution [© 17]
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the proposed capacitive loaded SRR structure magnetically coupled to the microstrip line. Comparing the electric field of the capacitive loaded SRR with that of the simple SRR shown in Fig. 13b at the resonant frequency, it can be observed that the modified SRR structure improves the electric field in the gap area, increasing the sensitivity. The field in the gap region of the SRR is further improved to obtain higher sensitivity by introducing an IDC in the gap of SRR as shown in Fig. 14a. The IDC based structure shown in Fig. 14a basically provides higher effective capacitance as compared the previous structures. Since in case of SRR the microstrip line carrying the signal is perturbed by using the magnetic coupling from the line and the resonator, a further enhancement in the design can be achieved if the design is made underneath the microstrip line, as a perturbed structure on the ground plane. This generates the basis of IDCSRR sensor.
Fig. 14 a Interdigital split ring resonator, b electric field magnitude distribution [© 17]
Fig. 15 Sensitivity comparison of different dielectric sensor designs having nearly similar design footprint
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IDCSRR sensor achieves more sensitivity than the IDSRR sensors and has better design flexibility since there is no limitation on the coupling gap of the microstrip line and the sensor element. The comparison of the sensitivity of different sensing elements are shown in Fig. 15.
4 Equivalent Circuit Modelling and Analysis of Interdigital SRR The IDSRR sensor resonator can be equivalently modelled as a coupled resonator circuit consisting of the equivalent mutual inductance and self capacitance of the resonator (Fig. 16a). Owing to the difficulty in modelling or quantifying the mutual inductance value, it can be equivalently decomposed into a series tank circuit [18] as depicted in Fig. 16b. The S21 of the equivalent circuit and the actual resonator performance can be compared to be almost identical from ADS simulation (Fig. 17). From the equivalent modelling it can be found that the interdigital line based sensor can provide almost 3 times the effective sensing capacitance than its conventional SRR counterpart. Hence IDSRR is more effective for sensing low permittivity materials. Similar analysis can be carried out for IDCSRR. Owing to the formation of the meander line on the ground IDCSRR has better sensitivity to magneto dielectric materials.
Fig. 16 Proposed equivalent circuit for IDC-SRR based dielectric sensor
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Fig. 17 Comparison of S21 plot of full-wave and ADS simulation
5 Generalized Integration of Resonators with Interdigital Structures 5.1 Conclusions This chapter deals with a generalized IoT enabled RF sensor system comprising of the RF oscillator, the rectifier and the Arduino microcontroller, with heart of the system being an interdigital CSRR sensor. The focus has been on integrating various components of the RF integrated circuits in order to realize a generic topology of the RF system containing the source as well as the detector. The major objective was here to make the proposed RF system IoT enabled so that the measured data could be accessed from distant location using simple Wi-Fi network. The IoT enabled automated RF sensor system measures the magnitude of S21 of the Dielectric Material Microwave Sensor for a range of frequencies and shares the calculated data at the private cloud storage channel through Wi-Fi in real-time. all the fabricated subcomponents such as oscillators and rectifiers have been integrated together along with the Arduino Uno and NodeMCU Wi-Fi module to realize a complete IoT enable RF sensor system. Testing and verification of the proposed system have been done by calculating the magnitude of S21 of the microwave sensor under both loaded and unloaded conditions. The measured data have been compared with the corresponding data obtained using the Vector Network Analyzer. The plot of the measured S21 data has been generated at the private cloud channel in real time so that data can be downloaded at any location and analyzed for post-processing applications. The system is very much cost effective and can be employed in material characterization industries.
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Some Applications of Interdigital Sensor for Future Technologies J. K. Roy and S. C. Mukhopadhyay
Abstract This chapter focuses on the application of Interdigital sensors considering future technologies. The interdigital sensor is interdigital electrodes with a dielectric. The geometric and physical structures with different types of dielectric materials formed a variety of sensor and transducer designs. Its physical and chemical principles behind the operation vary so much in different fields of science and technology, generating varieties of applications in reality. The chapter of the book highlights a few important applications of interdigital sensors considering capacitive, dielectric, piezo acoustic, chemical, biological, and micro-electro-mechanical varieties. These applications may play a great role in future technologies.
1 Introduction The term “Interdigital” does not have direct analogs in English. Thus, this most frequent term is often replaced by periodic, microstrip, comb, and grating, as well as such variations as interdigitated and combed. However, in practice, every microstrip circuit cannot be termed as interdigital. Similarly, every interdigital circuit is not periodic in practice. The term interdigital, selected for use throughout this paper, refers to a digit like or comb-like periodic pattern of parallel in-plane conducting electrodes used to build up the capacitance associated with the electric fields that penetrate the into the material sample or sensitive coating [1]. The first interdigital electrode design has been found in the patent of Nicola Tesla, which was issued in 1891 [2]. In this patent drawing, each “finger” is a rectangular plate, immersed in an insulating liquid. The total capacitance of the “electrical J. K. Roy (B) Eureka Scientech Research Foundation, Kolkata, West Bengal, India e-mail: [email protected] S. C. Mukhopadhyay School of Engineering, Macquarie University, Sydney, NSW 2109, Australia e-mail: [email protected]
© The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG 2021 S. C. Mukhopadhyay et al. (eds.), Interdigital Sensors, Smart Sensors, Measurement and Instrumentation 36, https://doi.org/10.1007/978-3-030-62684-6_16
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condenser” increases approximately linearly with the number of plates. This principle is used in the design capacitors as well. The interdigital sensor has two components, conducting a comb-like pair of electrodes and a substrate. The electrode pairs are in the same plane for sensing operation; therefore, this type of sensors called a planner interdigital sensor. The planner interdigital sensor is converted to a planer interdigital capacitive sensor if electrodes of the sensor are covered by insulating material. In either case, the measuring parameter is impedance. Therefore, it is also called an impedimetric interdigital sensor. During the last two decades, planar interdigital sensors have been widely used in a wide range of applications [3], due to its simplicity and low cost. Ayoub Bourjilat et al. [4] in 2017 studied the modelling of an interdigital sensor designed for conductivity measurement. It concluded with a new design of equivalent circuit of the sensor and explicit theoretical relation with geometry, no of combs substrate permittivity, and exciting frequency of the voltage applied. This equation was validated with the Finite element method. The authors took the example of electrodes interdigitated sensors with the following geometrical parameters (N = 40, η = 0.5, w = 3 μm, Kcell = 0.97). The sensor is evaluated in the presence of a solution modelled by a semi-infinite thickness rectangle Fig. 1 with an electrical conductivity of 1μS / cm and a relative permittivity of 80. Figure 2 is the Nyquist diagram of the sensor. The theoretical model is in perfect coherence with the simulation results (the triangles and rectangles represent the theoretical results) [4]. Another equivalent circuit is double layer dielectric, which is more practical in a sense. A double layer of dielectric is formed between the electrode. The thickness of the double layer is an important parameter in low frequency (