Very High Speed Integrated Circuits: Gallium Arsenide LSISemiconductors and Semimetals [1ST ed.] 9780127521299, 0127521291


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English Pages iii-x, 1-317 [329] Year 1990

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Table of contents :
Content:
Edited By
Page iii

Copyright Page
Page iv

List of Contributors
Page vii

Preface
Pages ix-x

Chapter 1 Active Layer Formation by Ion Implantation Original Research Article
Pages 1-61
M. Kuzuhara, T. Nozaki

Chapter 2 Focused Ion Beam Implantation TechnologyS Original Research Article
Pages 63-96
H. Hashimoto

Chapter 3 Device Fabrication Process Technology Original Research Article
Pages 97-157
T. Nozaki, A. Higashisaka

Chapter 4 GaAs LSI Circuit Design Original Research Article
Pages 159-232
M. Ino, T. Takada

Chapter 5 GaAs LSI Fabrication and Performance Original Research Article
Pages 233-303
M. Hirayama, M. Ohmori, K. Yamasaki

Index
Pages 305-309

Contents of Previous Volumes
Pages 310-317

Very High Speed Integrated Circuits: Gallium Arsenide LSISemiconductors and Semimetals [1ST ed.]
 9780127521299, 0127521291

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