Plasma Chemical Vapor Deposition of Nanocrystalline Diamond 1588830640
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Encyclopedia of Nanoscience and Nanotechnology
www.aspbs.com/enn
Plasma Chemical Vapor Deposition of Nanocrystalline Diamond Katsuyuki Okada National Institute for Materials Science, Tsukuba, Ibaraki, Japan
CONTENTS 1. Introduction 2. Growth of Nanocrystalline Diamond 3. Spectroscopic Characterization 4. Plasma Diagnostics Glossary References
1. INTRODUCTION Covalently bonded disordered thin-film materials have been of considerable interest from fundamental and applied perspectives in the last twenty years, since the chemical vapor deposition (CVD) of diamond was developed, followed by fullerenes and carbon nanotubes [1, 2]. Amorphous and nanostructured carbon films are being extensively studied for electron emitters, cold-cathode sources, hard lowfriction coatings, etc. From fundamental perspectives, on the other hand, the structure of these materials contains both three-fold coordinated (sp2 -bonded) and four-fold coordinated (sp3 -bonded) carbon atoms. Nanocrystalline diamond films have also drawn remarkable attention [3] because they have a low coefficient of friction and low electron emission threshold voltage. The small grain size (approximately 5–100 nm) gives films valuable tribology and fieldemission properties, compared with those of conventional polycrystalline diamond films. Furthermore, it has been proposed that applications for microelectromechanical systems (MEMS) devices, metal-semiconductor field effect transistors MESFETs, electrochemical electrodes, and biochemical devices can be created by taking advantage of these excellent properties [4–6]. Recent plasma dry processes (e.g., deposition, coating, etching) require a wide area and high density plasma at low pressures (