Physica status solidi. Subject and Author Index 1989: Physica Status Solidi (b). Basic research, Volumes 151 to 156. Physica Status Solidi (a) Applied Research, Volumes 111 to 116 [Reprint 2021 ed.] 9783112484067, 9783112484050

Citation preview

physica status solidi Cb) basic research

Volumes 151 to 156

Subject and Author Index 1989 Volumes 111 to 116

physica status solidi (a) applied research

AKADEMIE-VERLAG BERLIN ISSN 0370-1972/0031-8965 phys. stat. sol. (b)/(a), Berlin R22 (1989) 1 - 5 7 0

International Classification System for Physics*) 60. Condensed matter: structure, mechanical and thermal properties 61. Structure of liquids and solids; crystallography (see also 68.20. Solid surface structure, 71. Electron states) 62. Mechanical and acoustical properties of condensed matter (see also 61.70. Defects in crystals, 68.30. Surfaces and interfaces) 63. Lattice dynamics and crystal statistics (see also 65. Thermal properties, 66.70. Thermal conduction, 68.30. Dynamics of surface and interface vibrations, 78.30. Infrared and Raman spectra) 64. Equations of state, phase equilibria, and phase transitions 65. Thermal properties of condensed matter (see also 63. Lattice dynamics; for thermodynamic properties of quantum fluids, see 67.40; for thermal properties of solid helium, see 67.80) 66. Transport properties of condensed matter (nonelectronic) 67. Quantum fluids and solids; liquid and solid helium 68. Surfaces and interfaces; thin films and whiskers (for impact phenomena, see 79; for crystal growth, see 61.50) 70. Condensed matter: electronic structure; electrical, magnetic, and optical properties 71. Electronic states (see also 63. Lattice dynamics, 73. Electronic structure and electrical properties of surfaces, interfaces, and thin films) 72. Electronic transport in condensed matter (for surfaces, interfaces, and thin films, see 73) 73. Electronic and electrical properties of surfaces, interfaces, and thin films 74. Superconductivity 75. Magnetic properties and materials 76. Magnetic resonances and relaxation in condensed matter; Mossbauer effect 77. Dielectric properties and materials (for conductivity phenomena, see 72.20 and 72.80) 78. Optical properties and condensed-matter spectroscopy and other interactions matter with particles and radiation (for phonon spectra, see 63) 79. Electron and ion emission by liquids and solids; impact phenomena 85. Devices**)

*) Excerpt; reproduced with permission of International Council for Scientific and Technical Information (ICSTI). **) Outside the ICSTI Classification for Physics. (The Substance Classification is given on cover three)

physica status solidi (b)

physica status solidi (a)

basic research

applied research

Board of Editors

Board of Editors

P. A I G R A I N , Paris, S. A M E L I N C K X , Mol-Donk, M . BALKANSKI, Paris, M . C A R D O N A , Stuttgart, W. DEKEYSER, Gent, W. F R A N Z , Münster, E. G U T S C H E , Berlin, R. KAISCHEW, Sofia, R. KUBO, Tokyo, P. T. L A N D S B E R G , Southampton, S. L U N D Q V I S T , Göteborg, L. NÉEL, Grenoble, L. PAL, Budapest, A. P I E K A R A , Warszawa, A. S E E G E R , Stuttgart, F. SEITZ, New York, F. S T Ö C K M A N N , Karlsruhe, J. TAUC, Providence

S. A M E L I N C K X , Mol-Donk, J. A U T H , Berlin, H. B E T H G E , Halle, K. W. BÖER, Newark, E. G U T S C H E , Berlin, P. HAASEN, Göttingen, G M . H A T O Y A M A , Tokyo, B. T. KOLOMIETS, Leningrad, W. J. M E R Z , Zürich, G. O. M Ü L L E R , Berlin, A. S E E G E R , Stuttgart, S. SHIONOYA, Tokyo, C. M. V A N VLIET, Montreal,

Editor-in-Chief

Editor-in-Chief

E. G U T S C H E

E. G U T S C H E

Advisory Board

Advisory Board

M. AVEROUS, Montpellier, P. C. BANBURY, Reading, M. B E R N A R D , Bagneux, W. BRAUER, Berlin, W. C O C H R A N , Edinburgh, R. COELHO, Gif-sur-Yvette, R. E N D E R L E I N , Berlin, W. HAUBENREISSER, Jena, G . JACOBS, Gent, H.-G. KAHLE, Karlsruhe, H.-R. TREBIN, Stuttgart, M. MATYÄS, Praha, H. D. M E G A W , Cambridge, E. N A G Y , Budapest, E. A. NIEKISCH, Jülich, H. M. R O S E N B E R G , Oxford, S. SHIONOYA, Tokyo, W. S T E I N M A N N , München, I. M. TSIDILKOVSKII, Sverdlovsk, R. VAUTIER, Bellevue/Seine

L. N. A L E K S A N D R O V , Novosibirsk, W. A N D R Ä , Jena, H. BÄSSLER, Marburg, E. BAUER, Clausthal-Zellerfeld, G. C H I A R O T T I , Rom, H. C U R I E N , Paris, R. G R I G O R O V I C I , Bucharest, J. H E Y D E N R E I C H , Halle, F. B. H U M P H R E Y , Pasadena, A. A. K A M I N S K I I , Moskva, E. KLIER, Praha, Y. N A K A M U R A , Kyoto, J. N I H O U L , Mol, T. N . R H O D I N , Ithaca, New York, R. S I Z M A N N , München, J. STUKE, Marburg, J. T. W A L L M A R K , Göteborg

SUBJECT AND AUTHOR INDEX Volumes 151 to 156, 1989

Volumes 111 to 116, 1989

ISSN 0370-1972/0031-8965

AKADEMIE-VERLAG • BERLIN

Subscriptions, and orders for this Subject and Author Index or single copies of physica status solidi (b) and physica status solidi (a) should be directed: to the Akademie-Verlag Berlin, Leipziger Str. 3 — 4, 0-1086 Berlin, to a book-shop or to the wholesale distributing agency Kunst und Wissen, Erich Bieber, a Faxon Company, Postfach 102844, W-7000 Stuttgart 70; In USA and CANADA: to VCH Publishers, Inc., 303 NW 12th Avenue, Deerfield Beach, FL 33442-1788, USA; in other countries: to the international book and periodical trading, to the distributing centre Kunst und Wissen, Erich Bieber GmbH, a Faxon Company, Stampfenbachstr. 73, Postfach, CH-8035 Zürich, to the competent newspaper sales agency of the country, or to Akademie-Verlag Berlin, Leipziger Str. 3 - 4 , 0-1086 Berlin.

Schriftleiter und verantwortlich für den Inhalt der Zeitschriften: Professor Dr. E. Gutsche, Leipziger Straße 3 - 4 , Postfach 1233, 0-1086 Berlin. Verantwortlich für den Inhalt der Register: Dipl.-Phys. K. Müller, Leipziger Str. 3 - 4 , Postfach 1233, 0-1086 Berlin. Verlag: Akademie-Verlag Berlin, Leipziger Str. 3 - 4, 0-1086 Berlin; Fernruf: 223 6221 und 223 6229; Telex-Nr.: U4420; Bank: Berliner Stadtbank AG, Kto.-Nr.: 6651-25-130512. Veröffentlicht unter der Registriernummer 1310 und 1620. Gesamtherstellung: Druckhaus „Thomas Müntzer" GmbH, 0-5820 Bad Langensalza. Bestellnummer dieses Bandes: 1068/85 R 22. Urheberrecht: All rights reserved (including those of translation into foreign languages). N o part of this issue may be reproduced in any form, by photoprint, microfilm or any other means, nor transmitted or translated into a machine language, without written permission from the publishers. © 1990 by Akademie-Verlag Berlin. AN (EDV) 20831/20735

Preface The twenty second index volume contains volumes 151 to 156 of "physica status solidi (b) — basic research" as well as volumes 111 to 116 of "physica status solidi (a) — applied research", i.e. all volumes having appeared in 1989 containing 1492 papers. Beginning from January 1986 the "International Classification System for Physics" (Condensed Matter, items 60 and 70) of the International Council for Scientific and Technical Information, Abstracting Board completed by item 85 and a Substance Classification (both outside the ICSTI Classification for Physics) will be used for quoting papers in physica status solidi. Nevertheless, before taking over these subject classifications into the index volume they were once more carefully revised and in some cases improved and completed in order to get a most uniform and clear classification for all papers. The average number of quotations per paper in this index volume is about 2.7. I have to express my thanks to the readers for their interest, and I will always readily take up any critical remarks and proposals for improvements. Berlin, August 1990 Karin Müller

Contents International Classification System for Physics Substance Classification (according to physica status solidi) Some Comments on the Use of the Subject and Author Index 60. Condensed Matter: Structure, Mechanical, and Thermal Properties 61. Structure of Liquids and Solids; Crystallography 62. Mechanical and Acoustical Properties of Condensed Matter 63. Lattice Dynamics and Crystal Statistics 64. Equations of State, Phase Equilibria, and Phase Transitions 65. Thermal Properties of Condensed Matter 66. Transport Properties of Condensed Matter (Nonelectronic) 68. Surfaces and Interfaces; Thin Films and Whiskers 70. Condensed Matter; Electronic Structure; Electrical, Magnetic, and Optical Properties 71. Electronic States 72. Electronic Transport in Condensed Matter 73. Electronic Structure and Electrical Properties of Surfaces, Interfaces, and Thin Films 74. Superconductivity 75. Magnetic Properties and Materials 76. Magnetic Resonances and Relaxation in Condensed Matter; Moessbauer Effect 77. Dielectric Properties and Materials 78. Optical Properties and Condensed-Matter Spectroscopy and Other Interactions of Matter with Particles and Radiation 79. Electron and Ion Emission by Liquids and Solids; Impact Phenomena . . . . 85. Devices S. Substances Author Index

6 11 13 17 17 70 82 91 106 Ill 118 137 137 174 198 217 228 255 269 279 322 328 333 493

International Classification System for Physics*) 60. Condensed matter: structure, mechanical and thermal properties 61. Structure of liquids and solids; crystallography (see also 68.20. Solid surface structures, 71. Electron states) 61.10. X-ray determination of structures (for specific determinations, see 61.55 to 61.80) 61.12. Neutron determination of structures (for specific determinations, see 61.55 to 61.80) 61.14. Electron determination of structures (for specific determinations, see 61.55 to 61.80) 61.16. Other determination of structures (for specific determination, see 61.55 to 61.80) 61.20. Classical, semiclassical, and quantum theories of liquid structure (for electronic states, see 71 ; for liquid helium, see 67) 61.25. Studies of specific liquid structures 61.30. Liquid crystals 61.40. Amorphous and polymeric materials 61.50. Crystalline state (including molecular motions in solids) (for magnetic structure and spin systems, see 75.25) 61.55. Specific structures of elements and alloys 61.60. Specific structures of inorganic compounds 61.65. Specific structures of organic compounds 61.70. Defects in crystals (see also 61.80. Radiation damage, 62. Mechanical and acoustical properties, 71.55. Impurities and defect levels, 76.30. EPR of color centers and other defects, 78.50. Impurity and defect absorption in solids) 61.80. Radiation damage and other irradition effects (for techniques of structure determination, see 61.10 to 61.16; for electron and ion impact phenomena, see 79.20) 61.90. Other topics in structure of liquids and solids 62. Mechanical and acoustical properties of condensed matter (see also 61.70. Defects in crystals, 68.30. Surfaces and interfaces) 62.10. Mechanical properties of liquids (for viscosity of liquids, see also 66.20) 62.20. Mechanical properties of solids (related to microscopic structure) 62.30. Mechanical and elastic waves 62.40. Anelasticity, internal friction, and mechanical resonances For thermomechanical effects, see 65.70 For magnetomechanical effects, see 75.80 For piezoelectric effects, see 77.60 For elasto-optical effects, see 78.20 62.50. High-pressure and shock-wave effects in solids 62.60. Acoustical properties of liquids For lattice dynamics, phonons, see 63 For second sound in quantum fluids, see 67.40 62.65. Acoustical properties of solids For magnetoacoustic effects in metals, see 75.80 For acoustoelectric effects, see 72.50 For acousto-optical effects, see 78.20 62.80. Ultrasonic relaxation (see also 74.30. Ultrasonic attenuation in superconductors) 62.90. Other topics in mechanical and acoustical properties of condensed matter *) Excerpt, reproduced with permission of International Council for Scientific and Technical Information (ICSTI).

Classification System

7

63. Lattice dynamics and crystal statistics (see also 65. Thermal properties, 66.70. Thermal conduction, 68.30. Dynamics of surface and interface vibrations, 78.30. Infrared and Raman spectra) 63.10. General theory 63.20. Phonons and vibrations in crystal lattices 63.50. Vibrational states in disordered systems 63.70. Statistical mechanics of lattice vibrations (see also 65. Thermal properties of condensed matter, and 66.70. Thermal conduction) 63.75. Statistical mechanics of displacive phase transitions For order-disorder and statistical mechanics of model systems, see 64.60 For crystallographic aspects of polymorphic and order-disorder transformations, see 61.50 63.90. Other topics in lattice dynamics and crystal statistics

64. Equations of state, phase equilibria, and phase transitions 64.10. General theory of equations of state and phase equilibria 64.30. Equations of state of specific substances (see also 65.70. Thermal expansion) 64.60. General studies of phase transitions (for magnetic, superconducting, and quantum fluid critical phenomena, see 75, 74, and 67, respectively) 64.70. Phase equilibria, phase transitions, and critical points of specific substances 64.75. Solubility, segregation, and mixing 64.80. Other phase properties of systems 64.90. Other topics in equations of state, phase equilibria, and phase transitions

65. Thermal properties of condensed matter (see also 63. Lattice dynamics; for thermodynamic properties of quantum fluids, see 67.40; for thermal properties of solid helium, see 67.80) 65.20. Heat capacities of liquids 65.40. Heat capacities of solids (for specific heat of superconductors, see 74.30; for specific heat of magnetic systems, see 75.40) 65.50. Thermodynamic properties and entropy 65.70. Thermal expansion and thermomechanical effects (see also 64.30. Equations of state) For thermal conduction in nonmetallic liquids, see 66.60; for nonmetallic solids, see 66.70 For electronic thermal conduction, see 72.10 and 72.20 For thermal conductivity of superconductors, see 74.30 For pyroelectric and electrocaloric effects, see 77.70 65.90. Other topics in thermal properties of condensed matter

66. Transport properties of condensed matter (nonelectronic) 66.10. Diffusion and ionic conduction in liquids 66.20. Diffusive momentum transport (for viscosity of liquids, see also 62.10) 66.30. Diffusion in solids 66.60. Thermal conduction in nonmetallic liquids (for thermal conduction in liquid metals, see 72.15) 66.70. Nonelectronic thermal conduction and heat-pulse propagation in nonmetallic solids (for thermal conduction in solid metals, see 72.15; for statistical mechanics of lattice vibrations, see 63.70) 66.90. Other topics in nonelectronic transport properties

8

Classification System

67. Quantum fluids and solids; liquid and solid helium 67.20. Quantum effects on the structure and dynamics of nondegenerate fluids 67.40. Boson degeneracy and superfluidity of helium-4 67.50. Fermi fluids; liquid helium-3 67.60. Mixed systems; liquid helium-3, -4 mixtures 67.70. Films (including physical adsorption) 67.80. Solid helium and related quantum crystals 67.90. Other topics in quantum fluids (e.g., neutron-star matter)

68. Surfaces and interfaces; thin films and whiskers (for impact phenomena, see 79 ; for crystals growth, see 61.50) 68.10. Fluid surfaces and fluid-fluid interfaces 68.15. Liquid thin films 68.20. Solid surface structures 68.25. Mechanical and acoustical properties of solid surfaces and interfaces 68.30. Dynamics of solid surfaces and interface vibrations 68.40. Surface energy of solids; thermodynamic properties 68.45. Solid-fluid interface processes 68.48. Solid-solid interfaces (including bicrystals) (for grain boundaries, see 61.70) 68.55. Thin film growth, structure, and epitaxy 68.60. Physical properties of thin films: nonelectronic 68.70. Whiskers and dendrites: growth, structure, and nonelectronic properties 68.90. Other topics in the structure and nonelectronic properties of surfaces and thin films

70. Condensed matter: electronic structure; electrical, magnetic, and optical properties 71. Electronic states (see also 63. Lattice dynamics, 73. Electronic structure and electrical properties of surfaces, interfaces, and thin films) 71.10. General theories and computational techniques 71.20. Electronic density of states determinations (including energy states of liquid semiconductors) (see also 65.40. Electronic heat capacity) 71.25. Nonlocalized single-particle electronic states 71.30. Metal-insulator transitions 71.35. Excitons and related phenomena (including electron-hole drops) 71.36. Polaritons (including photon-phonon and photon-magnon interactions) 71.38. Polarons and electron-phonon interactions (see also 63.20, phonon-electron interactions in lattices) 71.45. Collective effects 71.50. Localized single-particle electronic states (excluding impurities) 71.55. Impurity and defect levels 71.60. Positron states (see also 78.70. Positron annihilation) 71.70. Level splitting and interactions (see also 75.10. — in magnetic phenomena, 75.30. Exchange and superexchange interactions, 73.20. Electronic surface states) 71.90. Other topics in electron states

Classification System

9

72. Electronic transport in condensed matter (for surfaces, interfaces, and thin films, see 73) 72.10. Theory of electronic transport; scattering mechanism 72.15. Electronic conduction in metals and alloys 72.20. Conductivity phenomena in semiconductors and insulators (for nonelectronic conduction, see 66.70) 72.30. High-frequency effects ; plasma effects 72.40. Photoconduction and photovoltaic effects ; photodielectric effects 72.50. Acoustoelectric effects 72.55. Magnetoacoustic effects 72.60. Mixed conductivity and conductivity transitions 72.70. Noise processes and phenoma 72.80. Conductivity of specific semiconductors and insulators 72.90. Other topics in electronic transport in condensed matter

73. Electronic structure and electrical properties of surfaces, interfaces, and thin films 73.20. Electronic surface states (for emission and impact phenomena, see 79) 73.25. Surface conductivity 73.30. Surface double layers, Schottky barriers, and work functions 73.40. Interfaces 73.60. Electronic properties of thin films 73.90. Other topics in electrical properties of surfaces, interfaces, and thin films

74. Superconductivity 74.10. Occurrence, critical temperature 74.20. Theory 74.30. General properties 74.40. Fluctuations and critical effects 74.50. Tunneling phenomena, Josephson effect, and proximity effects 74.55. Type-I superconductivity 74.60. Type-II superconductivity 74.70. Superconducting materials 74.90. Other topics in superconductivity

75. Magnetic properties and materials 75.10. General theory and models of magnetic ordering (see also 71.25. Nonlocalized single-particle electronic states, 71.70. Level splitting and interactions) 75.20. Diamagnetism and paramagnetism 75.25. Spin arrangements in magnetically ordered materials (neutron studies, etc.) 75.30. Magnetically ordered materials, other intrinsic properties (for critical-point effects, see 75.40) 75.40. Critical-point effects, specific heats, short-range order (see also 65.40. Heat capacities) 75.50. Studies of specific magnetic materials 75.60. Domain effects, magnetization curves, and hysteresis 75.70. Magnetic films and plates 75.80. Magnetomechanical and magnetoelectric effects, magnetostriction For galvanomagnetic effects, see 72.15 and 72.20 For magneto-optical effects, see 78.20 75.90. Other topics in magnetic properties and materials

Classification System

10

76. Magnetic resonances and relaxation in condensed matter ; Môssbauer effect 76.20. General theory of resonances and relaxation 76.30. Electron paramagnetic resonance and relaxation 76.40. Diamagnetic and cyclotron resonances 76.50. Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance (see also 75.30. Spin waves) 76.60. Nuclear magnetic resonance and relaxation 76.70. Magnetic double resonances and cross effects 76.80. Môssbauer effect; other y-ray spectroscopy 76.90. Other topics in magnetic resonances and relaxation 77. Dielectric properties and materials (for conductivity phenomena, see 72.20 and 72.80) 77.20. Permittivity 77.30. Polarization and depolarization effects 77.40. Dielectric loss and relaxation 77.50. Dielectric breakdown and space-charge effects 77.55. Dielectric thin films 77.60. Piezoelectricity and électrostriction (for piezo-optical effects, see 78.20) 77.70. Pyroelectric and electrocaloric effects 77.80. Ferroelectricity and antiferroelectricity 77.85. Electrical resonances 77.90. Other topics in dielectric properties and materials 78. Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation (for phonon spectra, see 63) 78.20. Optical properties and materials 78.30. Infrared and Raman spectra and scattering 78.35. Brillouin and Rayleigh scattering 78.40. Visible and ultraviolet spectra 78.45. Stimulated emission 78.50. Impurity and defect absorption in solids 78.55. Photoluminescence 78.60. Other luminescence and radiative recombination For photoconduction and photovoltaic effects, see 72.40 78.65. Optical properties of thin films 78.70. Other interactions of matter with particles and radiation 78.90. Other topics in optical properties of condensed matter and other interactions of matter with particles and radiation 79. Electron and ion emission by liquids and solids; impact phenomena 79.20. Impact phenomena, including electron spectra and sputtering 79.40. Thermoionic emission 79.60. Photoemission and photoelectron spectra 79.70. Field emission and field ionization 79.75. Exoelectron emission 79.80. Resonance tunneling 79.90. Other topics in emission and impact phenomena in condensed matter 85. Devices*) *) Outside the ICSTI Classification for Physics.

Classification System

Substance Classification (according to physica status solidi)*) 51.

Transition metals and their alloys and compounds (for oxides, see S10) 51.1. Fe 51.2. Other 3d metals 51.3. Noble metals 51.4. Lanthanides 51.5. Actinides 51.61. Carbides, silicides, germanides 51.62. Nitrides, phosphides, arsenides SI .63. Sulfides, selenides, tellurides

52.

Alkali metals and their alloys and compounds (for alkali halides, see S9.ll)

53.

Alkaline earth metals and their alloys and compounds (for alkaline earth halides, see S9.12)

54.

Other metals and their alloys

55.

Nonmetallic elements 55.11. Silicon 55.12. Germanium S5.2. Solidified Gases

56.

Group IV compounds (for transition metal compounds, see S 1.61)

57.

Group V compounds (for transition metal compounds, see SI.62) S7.1. III-V compounds 57.11. Phosphides 57.12. Arsenides 57.13. Antimonides 57.15. Mixed crystals 57.16. Higher compounds

58.

Chalcogenides (for transition metal compounds, see SI.63) S8.1. II—VI compounds 58.11. Sulfides 58.12. Selenides 58.13. Tellurides 58.15. Mixed crystals 58.16. Higher compounds

59.

Halides 59.11. Alkali halides 59.12. Alkaline earth halides 59.15. Mixed crystals 59.16. Higher compounds

S10. Oxides S10.1. Simple oxides S10.15. Mixed crystals SI I. Other higher compounds S11.1. Salts of oxy-acids SI 1.2. Spinels, garnets, ferrites SI2. Organic compounds S12.1 Quasi-one-dimensional systems *) Outside the ICSTI classification for Physics.

11

Some Comments on the Use of the Subject and Athor Index

13

Some Comments on the Use of the Subject and Author Index The "International Classification System for Physics" (the condensed matter items 60 and 70) completed by item 85 and a Substance Classification (according to physica status solidi) is used. On cover two the second-level headings of the condensed matter items and on pages 6 to 10 the third-level headings are reproduced. As a help for using the subject index on pages 14 and 15 in addition also a series of important fourth-level headings is given. The substance classification is published on cover three and on page 11. All papers will be quoted under each relevant section. There is made a distinction between one or two principal entries (refering to the main subject matter of the paper) and secondary entries (refering to subsidiary subject matter and substance, respectively). On the line following the title the subject classification is given in the same manner as in the volumes. Each entry gives the volume, the number of the issue, the initial and final page numbers. A paper of physica status solidi (b) or physica status solidi (a) is marked by (b) or (a) in front of the line, respectively. The letter "K" before the page numbers indicates a short note published in the offset part of the journal. The entries for review articles, original papers, short notes, and errata are made together in a single list for each subject. These are ordered according to data of publication, irrespective of being a paper of physica status solidi (b) or physica status solidi (a). Original papers are sometimes published in several parts under the same principal title (in general with special subtitles). The various parts of papers of this type are treated separately and each part is classified according to its particular contents. The author index gives the names of the authors in alphabetical order. Each name is followed by the bibliographic details of the paper. A paper of physica status solidi (b) or physica status solidi (a) is again marked by (b) or (a) in front of the number of the volume, respectively. In the last column the subject classification of the paper is presented in the same manner as in the volumes. When several papers have been published by the same author they are arranged according to data of publication, irrespective of being a paper of physica status solidi (b) or physica status solidi (a). To find a paper of your interest please choose first the special entry of the subject index and then use the volume number and page.

14

Some Comments on the Use of the Subject and Author Index

In using the subject index attention should be given to the following details: 61.10. to 61.16. Theory and experimental techniques of determination of structures — for specific determinations see 61.55 to 61.80 61.16. Other determination of structures — electron microscopy and field-ion microscopy determinations — EPR and N M R determinations 61.25. Studies of specific liquid structures — macromolecular and polymer solutions — molten salts — liquid metals 61.40. Amorphous and polymeric materials — glasses, polymers, elastomers, plastics 61.50. Crystalline state (including molecular motions in solids) — physics of crystal growth — crystal symmetry: models, space groups, crystalline systems and classes — crystal morphology and orientation — crystallographic aspects of polymorphic and order-disorder transformations 61.70. Defects in crystals — grain and twin boundaries — stacking faults and other planar or extended defects — doping and implantation of impurities — impurity concentration, distribution, and gradients 61.80. Radiation damage and other irradiation effects — channeling, blocking, energy loss of particles — X-rays, y-rays, electrons and positrons, neutrons, atoms and molecules, ions — for ion implantation see 61.70 63.20. Phonons and vibrations in crystal lattices — phonon-phonon, phonon-electron, and phonon-defect interactions 64.60. General studies of phase transitions — order-disorder and statistical mechanics of model systems — equilibrium properties near single critical points, critical exponents — dynamic critical phenomena — multicritical points — metastable phases 64.80. Other phase properties of systems — stoichiometry and homogeneity — microstructure 66.30. Diffusion in solids — theory of diffusion and ionic conduction in solids — self-diffusion and ionic conduction in non-metals — diffusion, migration, and displacement of impurities and other defects 71.25. Nonlocalized single-particle electronic states — techniques of band-structure calculation — measurements of Fermi surface parameters (including dHvAj magnetoacoustic, positron annihilation, and cyclotron resonance studies, etc.) — effective mass and g-factors — band structure of crystalline metals, semiconductors, and insulators 71.45. Collective effects — exchange, correlation, dielectric and magnetic functions, plasmons — Fermi-Thomas models — calculations of total electronic binding energy 71.70. Level splitting and interactions — crystal and ligand fields — spin-orbit coupling, Zeeman, Stark, and strain splitting — exchange interactions — nuclear states and interactions

Some Comments on the Use of the Subject and Author Index

15

72.10. Theory of electronic transport; scattering mechanism — general formulation of transport theory — scattering by phonons, magnons, and other nonlocalized excitations — scattering by point defects, dislocations, surfaces, and other imperfections (including Rondo effect) 72.15. Electronic conduction in metals and alloys — galvanomagnetic and other magnetotransport effects — thermomagnetic and thermoelectric effects — collective modes — scattering mechanism and Kondo effect 72.20. Conductivity phenomena in semiconductors and insulators — scattering mechanism — piezoresistance — galvanomagnetic and other magnetotransport effects — thermomagnetic and thermoelectric effects 73.40. Interfaces — contact resistance, contact potential, rectification — tunneling: general — p-n junctions — MIS, MIM, MSM, SIS, and SMS structures 75.30. Magnetically ordered materials, other intrinsic properties — saturation moments and magnetic susceptibility — spin waves — exchange and superexchange interactions — anisotropy — magnetic impurity interactions — magnetic phase boundaries — magnetocaloric effect 75.50. Studies of specific magnetic materials — ferromagnetism — antiferromagnetics, ferrimagnetics — amorphous magnetic materials — magnetic liquids 75.60. Domain effects, magnetization curves, and hysteresis — high coercitivity materials — fine-particle systems — magnetic aftereffects — magnetic annealing and temperature-hysteresis effects 78.20. Optical properties and materials — general theory — optical constants and parameters — optical rotatory power — birefringence — piezo-, elasto-, acousto-, electro-, magneto-, and thermo-optical effects 78.60. Other luminescence and radiative recombination — electroluminescence — cathodo- and iono-luminescence — thermoluminescence — sono- and tribo-luminescence — chemiluminescence 78.70. Other interactions of matter with particles and radiation — positron annihilation — X-ray scattering, absorption, and emission — microwave and radiofrequency (including resonances) 79.20. Impact phenomena, including electron spectra and sputtering — electron impact: Auger and secondary emission — atom, molecule, and ion impact — atomic and molecular beam interactions

Subject

Index

60. Condensed Matter: Structure, Mechanical, and Theraal Properties 61. Structure of Liquids and Solids; Crystallography (see also 68.20. Solid surface structures, 71. Electron states) 61.10. X-ray determination of structures (for specific determinations, see 61.55 to 61.80) S.A. MAKSIMENKO Covariant Theory of the Multiwave Bragg-Laue X-Ray Diffraction in Crystals 61.10

(b) Vol.151,Ho.1, 17-22

V. HOLY and J. KUBÈNA On the Integrated Intensity of X-Ray Diffraction in Crystals with Randomly Distributed Defects 61.10 and 61.70; S5.ll (b) Vol.151,No.1, 23-28 V.S. HAROOTYUNYAN and P.H. BEZIRGANYAN Method of Determing Supersmall Dilatations in a Crystal Lattice 61.10

(a) Vol.Ill,No.1, 41-46

A. SCHOBERT and B. MICHEL Simultaneous Line Broadening and Texture Analysis 61.10 and 68.20; SI.1 (a) Vol.Ill,No.2, K137-K140 V. GEIST and D. STEPHAN Investigation of Lattice Strain in Proton-Irradiated Semiconductor Materials 61.80; 61.10; S5.ll; S5.12; S7.1 (a) Vol.112,No.1, 79-88 J. AOLEYTNER Structural Changes in Solids Induced by Heavy Ions at Energies of MeV/n. Results of X-Ray and Electron Microscopic Studies 61.80; 61.10; 61.16; S5.ll; S11.2 (a) Vol.112,No.2, 679-688 C.N.W. DARLINGTON On the Changes in Structure of PLZT(8.7/65/35) between 80 and 750K 64.70; 61.10; 77.80 (a) Vol.113,No.1, 63-70 ! Ikjiici, lef.-ll.i:

Subject

Index

60. Condensed Matter: Structure, Mechanical, and Theraal Properties 61. Structure of Liquids and Solids; Crystallography (see also 68.20. Solid surface structures, 71. Electron states) 61.10. X-ray determination of structures (for specific determinations, see 61.55 to 61.80) S.A. MAKSIMENKO Covariant Theory of the Multiwave Bragg-Laue X-Ray Diffraction in Crystals 61.10

(b) Vol.151,Ho.1, 17-22

V. HOLY and J. KUBÈNA On the Integrated Intensity of X-Ray Diffraction in Crystals with Randomly Distributed Defects 61.10 and 61.70; S5.ll (b) Vol.151,No.1, 23-28 V.S. HAROOTYUNYAN and P.H. BEZIRGANYAN Method of Determing Supersmall Dilatations in a Crystal Lattice 61.10

(a) Vol.Ill,No.1, 41-46

A. SCHOBERT and B. MICHEL Simultaneous Line Broadening and Texture Analysis 61.10 and 68.20; SI.1 (a) Vol.Ill,No.2, K137-K140 V. GEIST and D. STEPHAN Investigation of Lattice Strain in Proton-Irradiated Semiconductor Materials 61.80; 61.10; S5.ll; S5.12; S7.1 (a) Vol.112,No.1, 79-88 J. AOLEYTNER Structural Changes in Solids Induced by Heavy Ions at Energies of MeV/n. Results of X-Ray and Electron Microscopic Studies 61.80; 61.10; 61.16; S5.ll; S11.2 (a) Vol.112,No.2, 679-688 C.N.W. DARLINGTON On the Changes in Structure of PLZT(8.7/65/35) between 80 and 750K 64.70; 61.10; 77.80 (a) Vol.113,No.1, 63-70 ! Ikjiici, lef.-ll.i:

Subject Index

18

T. FUKOMORI and K. FUTAGAMI Nonuniformity on GaAs Wafers Revealed by an X-Ray Double-Crystal Method 61.10 and 61.70; S7.12 (a) Vol.113,No.1, K19-K22 N.N. FALEEV, L.I. FLAKS, and S.G. KONNIKOV Double Crystal X-Ray Diffraction Characterization of Multilayer Heteroepitaxial Structures with Submicron Layers 68.55; 61.10; S7.15 (a) Vol.113,No.2, 431-438 A.M. AFANASEV, R.M. IMAMOV, A.V. MASLOV, and E.KH. MOKHAMEDZHANOV On the Yield of Photoelectrons in X-Ray Diffraction under the Conditions of Total External Reflection 61.10

(a) Vol.113,No.2, K153-K156

D.Y. LI, X.F. WU, and T. KO The Effect of Stress on the Lattice Instability of a TiNi Alloy 64.70; 61.10; 62.20; 72.15; SI.2 (b) Vol.154,No.1, 85-96 D.V. NOVIKOV, E.A. KONDRASHKINA, and S.A. STEPANOV Study of X-Ray Surface Backscattering 61.10; 68.20; S5.12 (a) Vol.114,No.1, K7-K10 E. WOLSKA and U. SCHHERTMANN Selective X-Ray Line Broadening in the Goethite-Derived Hematite Phase 61.10 and 64.70; 61.60; S10.1 (a) Vol.114,No.1, K11-K16 V. HOLY and J. K0BENA Characterization of Microdefects in Silicon by Means of X-Ray Reflection Curves 61.10 and 61.70; S5.ll (b) Vol.155,No.2, 339-348 J. DEXPERT-GHYS, Y. CHARREIRE, P. ESTEBAN-PUGES. L. ALBERT, and H. DEXPERT Optical and EXAFS Investigations of ZnS:Tm3+ Powders 71.55; 61.10; 78.55; S8.ll (b) Vol.155,No.2, 571-580 J. HAERTWIG and S. GROSSWIG Measurement of X-Ray Diffraction Angles of Perfect Monocrystals with High Accuracy Using a Single Crystal Diffractometer 61.10; S5.ll (a) Vol.115,No.2, 369-382

61.10. X-ray determination of structures

19

T. KITAHO, T. ISHIKAWA, and J. MATSOI Contrast Formation Mechanism around the Cell Walls in Equi-Lattice-Spacing Mapping X-Ray Topographs for an Undoped... 61.10; S7.12 (a) Vol.115,No.2, 383-388 R. FABBRI, M. SERVIDORI, A. ZAHI, and F. CEMBALI Two-Stage Recovery of Lattice Damage Induced in Silicon by Ion Implantation below Amorphization Threshold. Analysis by... 61.80; 61.10; S5.ll (a) Vol.115,Ho.2, 437-444 R.M. IMAMOV, A.A. LOMOV, and D.V. NOVIKOV Grazing Incidence Diffraction X-Ray Topography 61.10; 68.20; S5.ll (a) Vol.115,No.2, K133-K134 S.N. MAITI, S. SENGUPTA, and D. ROY Theoretical Interpretation of EXAFS Results for the Relaxation in Mixed Crystals 64.75; 61.10; S9.ll (b) Vol.156,No.1, 83-92 M.YA. GAMARNIK and YU.YU. SIDORIN Change of the Unit Cell Parameters in Highly Dispersed Gold, Silver, and Copper Powders 61.10 and 68.90; SI.3 (b) Vol.156,No.1, K1-K4 A.M. AFANASEV, R.M. IMAMOV, E.KH. MUKHAMEDZHANOV, and A.A. BZHEUMIKHOV. Double-Channel X-Ray Standing Wave Technique 61.10; 78.70; S7.12 (a) Vol.116,No.1, 197-202 WENHUI SO, CHANGQING JIN, LANYING HE, YIFENG WANG, HONGJIAN LIU, and XIANG LONG Study on Oxygen Hole and Superconductivity in Y i B a 2 C u 3 0 7 - ( Material 64.70 and 74.70; 61.10; S10.15 (a) Vol.116,No.1, 267-274 H. HERMANN and M. ERMRICH Absorption of Scattered X-Rays in Stochastic Multi-Phase 61.10 (a) Vol.116,No.1, K19-K24

Systems

P.A. BEZIRGANYAN, A.P. BEZIRGANYAN, and S.E. BEZIRGANYAN X-Ray Diffraction by a Dielectric with Cosine-Like Polarizabillty (0 (b)

111,K259 112, 811 151, 655 156, 243 112, 733 112, 747 112, 703 111, 173 154, 389 114.K211 153, 653

78.20; S12 61.80 and 78.55; S10 76.80 68.25 and 68.40; 73.20; S5.ll 68.55; 61.80; S1.6Î 68.55 and 79.20; 64.60; SI.61 61.80 and 64.75; S5. 11 61.80 and 68.20; SI. 1; S4 78.20; 61.60; S8 15 72.20 and 72.80; S8. 16 63.20 and 71.70; 72.20; S7. 13

Author Index R.R. Galimov

(b) (b) (b) (a) (a) (b) (b) (a) (a) (a) (b) (a) (b) (a) (a) (b) (a) (b) (b) (a)

153, 443 154, 43 153, 179 114, 99 113, K45 156, Kl 151, 513 115, K13 115.K195 114, 457 154,K137 114,K241 156, 449 111, K99 116, K91 153,K187 114, 407 153, K89 153, 727 114, 11

G. Gawlik J. Gawlik T. Gbehi

(b) (b) (a) (a) (a) (a) (a) (a) (b) (b) (a) (b) (b) (b) (a) (a) (b)

152, 329 155,K161 111, K89 111,K209 113,K235 115,K205 113.K235 116,K195 153, 307 155, 481 112, 805 155, 723 151, 721 156, 697 112, 343 112, 347 152, 415

H. Gdanitz N. Geiiauekaité B. Gegenheimer

(a) 112, K75 (b) 154, 341 (b) 155,K123

I.I. Gegußin W. Gehlhoff H.D. Geiler V. Geist

(b) (b) (a) (a)

151, 581 155, 597 112, 727 112, 79

R.S. Gekht P.V. Gel P.V. Geld V.D. Gelikonova A. Gemperle D. Genzow 0. Georgieva A.N. Georgobiani N. Georgoulas K.H. Georgy X. Gerbaux

(b) (b) (a) (a) (a) (a) (a) (a) (a) (a) (a)

155, 639 152, K55 114, 315 115,K205 112, 335 114, 621 116, 213 111, 301 116, 725 112, K91 115, 587

J.C. Gallardo M.V. Galustashvili M.Ya. Gamarnlk B. Gambln N. Ganev V.V. Ganin V. A. Ganshin Jin-Liang Gao M. Gapanov S.V. Gaponenko V.I. Garasin G. Garayagdev J. Garcia-Sole R.K. Gartia N.M. Gasanly M. Gasgnier F.M. Gashimzade V.I. Gatalskaya

G.V. Gatalskii B. Gather K. Gatterer G.M. Gavrilenko V.l. Gavrilenko V. Gavryuehin

61.70 61.70 71.25; 78.20 61.70; S9.ll 64.70; S8.ll 61.10 and 68.90; S1.3 62.20 62.20; 68.20; Sl.l 74.70; 78.30; 79.20; 79.60 61.70; 78.20; Sll.l 71.38 78.60 and 79.75; 61.80; S9.1 71.35 and 78.65; S8.12 72.80 and 75.50; S8 62.65 and 72.40; S8.15 78.55; S9.ll 78.60 63.20 and 78.30; S8.16 78.30; 77.80; S8.16 68.55 and 73.40; 75.70; 78.65; S1.4; S1.63; S10 78.20; S8 78.30 74.70; S10.15 74.70; S10.15 61.80 and 74.70; S10.15 74.70; S10.15 . 61.80 and 74.70; S10.15 77.20; 77.80; Sll.l 74.70; 75.30; 78.30; S10.15 68.20 and 68.45; 73.20 61.70; 78.20; S5.ll 78.20; 71.25; S5.ll 71.55 and 78.50; S8.12; S10. 78.40; 71.25; Sll.l 61.80; 61.70; Sl.l 61.80 and 68.20; Sl.l 61.70; 76.30; 78.50; 78.60; Sil 66.30; S5.ll 76.80; 61.55; S1.63 72.80 and 74.70; 72.20; S10.15 71.25 and 78.70; S9.ll 71.55; 76.30; S7.ll 68. 55 61.80; 61.10; S5.ll; S5.12; S7. 1 75.25; 75.30 78.70; S1.61 65.70 and 75.40; S1.61 74.70; S10.15 61.80 and 68.20; S1 68.55; 78.55; S8 61.60 and 61.70; S8.16 78.20 and 78.55; 78.60; S8. 73.60 and 78.65; S6 62.20; S1.2 78.30; 77.80; Sil

512 E. Gerdes H. Gerecke

Author Index (a) (b) (b) (b) (b) (a) (b) (b) (b) (b) (b) (b) (b) (a) (b)

114, 387 154, 565 156, 151 151, 241 152, 593 113.K231 151.K135 153,K209 154, K29 154, K35 154.K121 154,K147 155, K23 116, K47 152, 101

Yu.P. Gnatenko

(a) (b) (b) (a) (a) (a) (b) (b) (b) (b) (b) (b) (b) (a) (b) (b) (to) (a) (a) (b) (b) (a) (b) (b) (a) (a) (b) (b) (b) (a) (a) (b) (b) (a) (a) (a) (b)

113, 223 153,K155 151.K135 114, 381 111, K83 114, 381 152, 625 152, 691 156, 705 153,R209 154.K121 154,K147 155, K23 112, 305 153, 403 154, 273 151, 453 114, 265 116, 725 152, K33 153, 281 115, 569 151.K155 153.K171 112, 753 115,K207 156, 195 153, 659 151, 469 112, K65 113, 497 155, 501 155, 513 114.K107 112, 835 112, 839 153, 667

N .K. Gobran M . Godlewski I . Godmaniß 0 . Goede

(b) (a) (a) (b)

155, 114, 111, 151,

E. Gerlach A. I. German K. Germanova K.P. Ghatak

A. Ghazi C. Ghezzl G. Ghibaudo A. Ghoeal D.K. Ghosh K. Ghosh P. S. Ghoeh S. Ghosh A., Ghoehal

E.V. Gilan P.. Gilliot C.. Giovanella E., Giovenale A., A. Gipplue D., Girginoudl W., Girirat G., Giro V..V. Gladkii C.. Gladun S..J. Giadyßz G.. Gïadyszewski P.. Glaremin V,.B. Glazman G .A. GledhUl K,.D. Glinchuk G,.F. Glinekii I . Gïowacki L . GJrußiec

453 127 335 175

77.20 and 77.40; S10.15 63.20 and 68.30; 73.40; S7.12 63.20; 68.30; S7.12; S7.15 72.20; 61.70; 71.45 72.20 72.80; S7.12 71.25 and 73.40; S8.15 73.40 and 85 62.20; S7 62.20; S8.ll 73.40; S7.15 72.20 71.25; S4 63.70; S9.ll 73.40; 71.35; 72.40; 78.55; S7.15 73.40 and 85 72.10 71.25 and 73.40; S8.15 78.20; 85; S7.15 72.30 78.20; 85; S7.15 72.50; 71.25; S7.13 78.20; 77.60; S7.13 78.35; S7.13 73.40 and 85 73.40; S7.15 72.20 71.25; S4 61.80 and 73.40; S8.13 78.20; S9 74.50; 64.70; S10.15 61.70; 78.50; 78.55; S9.ll 61.60 and 72.80; 75.50; SI.4 73.60 and 78.65; S6 62.50 and 78.40; S8.15 72.40 and 73.60; S12 77.80; S9.16 72.80; SI.61 75 . 40 61.55 and 61.80; 68.48; S4 68.55 and 74.70; S10.15 64.60; 78.20; 78.55; Sll.l 71.55; 61.70; S5.ll 61.70; 78.50; S7.12 61.70; 71.55; S5.ll 71.55 and 78.55; 61.80; S7.12 71.36 71.36 78.60; S12 66.30; Sl.l 62.20; 66.30; Sl.l 71.35 and 71.55; 72.40; 78.55; S8 62.80; Sl.l; SI.2; S4 61.70; 76.30; S8.ll 78.60; S10.1 71.35 and 71.55; 76.90; 78.55; S8.ll; S8.15

513

Author Index 0. Goede P. Goernert G. Goetz

I.M. Golban L.M. Gçldenberg R. Goldhahn M. Goldmann T. Goldmann E. Goldys O.A. Golikova I.Yu. Gollney E.M. Gololobov V.N. Golovin M.F. Golovko Yu.I. Golovko V-.P. Goltßev A. Goltzen^ M. Golz M.J.M. Gomes A.V. Gomonnai V.P. Gomozov Yu.G. Goncharov R. Gonczarek J.L. Gondar Changde Gong J. Gong Min Gong F. Gonzales J. Gonzalez J. Gonzalez Eßtevez E.S.R. Gopal S.I. Gorbachuk I.S. Gorban L.V. Gorchak V.S. Gorelik S.D. Gorodetekii B.P. Gorßhunov P. Goreki S.B. Goryachev B.N. Goshchitskii T. Goto V. Gottschalch

(b) (b) (a) (a) (a) (a) (a) (a) (a) (b) (b) (b) (b) (a) (b) (a) (b) (b) (a) (a) (b) (b) (a)

151, 311 154, 405 115, 229 111, 59 111, K13 112, 289 112, 727 112, 733 112, 747 152, 225 154, 333 154, 769 152, 463 114, 387 154, 397 113, Kl 155, 475 156, 211 114, K57 115, K79 151.K161 155, 549 114, 559

(a) (b) (b) (b) (b) (a) (b) (b) (b) (b) (b) (a) (a) (a) (a) (a) (a)

111, K13 156, 71 151, 383 151, 747 154,K197 115, 207 153', 529 154,K157 156, 259 151, K77 154, K63 111, K53 111, K49 112, K53 113, 187 115,K233 114, 525

(a) (a) (a) (b) (a) (a) (b) (b) (b) (a) (a) (a)

114, 305 115, 555 112, 305 155, 113 115, K95 116,K129 155.K157 153, 443 154, 43 112, 161 111, Kl 112, 519

(a) 113, 71 (a) 114, 419 E\ Gouda 3! flljsici, «ef.-M.IZ

(a) 111,K265

76.30; 75.30; S8.15 , 78.20; 75.30; S8.15 68.55 and 78.20; Sil. 2 68.48; 61.16; 61.80; S7.12 61.80 and 68.48; SI.2 61.80; 78.50; S7.ll; S7.12 68.55 68.55; 61.80; SI.61 68.55 and 79.20; 64.60; SI.61 72.20; S5 64.70 and 76.30; 72.20; S12.1 78.20; S7.12 64.60; 68.45; S5 77.20 and 77.40; S10.15 78.50; S7.ll 61.40 and 72.. 20; S5 71.20; 73.60; 78.65; S5.ll 78.65; S7.12; S7.15 74.70; S10.15 61.70 and 74.70; S10.15 74.70; S10.15 71.55 and 73.40 64.70 and 68.55; 77.80; S10.15 61.80 and 68.48; SI.2 61.70; 76.90 78.65 71.35 and 78.40; S9 61.80 and 78.30; S7.ll 68.55; 73.60; S10 64.60 and 78.30; S8.16 74.20 71.20 75.40 75.10 61.70 and 72.70; S7.12 71.55; S5.ll 78.60; S10.1 75.50; SI.1 ; SI.2 75.50 and 75.80; SI 64.70; 61.40; 65.70; 72.80; S8 76.30; S10.15 78.60; 71.55; S7 61.80 and 73.40; S8.13 63.20 and 68.30; 78.30; S8 75.50; SI.1; SI.2 78.20; 74.70; S12 78.20; Sll.l 61.70 61.70 61.40 and 75.50; Sil.2 61.60; Si.61 61.70 and 68.55; S7.11; S7.12; S7.15 61.70 and 68.55; S7.ll; S7.15 73.40 and 85; 78.60; S7.ll; S7.15 61.25 and 77.20; S12

514

Author Index

R D. Gould C Gourdon D. Gourier

(a) 115 (b) 153 (b) 152

237 641 415

6 G R V D A A

(a) 113 (a) 113 (b) 155 (a) 116 (b) 154 (b) 156 (b) 154 (b) 155 (a) 112 (b) 151 (b) 151 (b) 151 (a) 114 (b) 153 (a) 116 (b) 154 (a) 111 (b) 155 (b) 153 (b) 156 (b) 152 (a) 114 (a) 113 (a) 112 (b) 153 (b) 155 (b) 155 (b) 153 (a) 115 (a) 111 (a) 111 (a) 116 (a) 112 (a) 113 (a) 112 ( a ) 115 (a) 112 (b) 155

113 403 K81 425 K197 403 333 147 765 347 453 623 K211 633 521 K47 345 475 721 449 61 621 597 K61 633 215 179 65 599 625 405 K125 327 K143 175 K219 661 77

Govindaraj. A. Govor P. Goyal K. Goyal B. Goyer V. Grachev Graja

D Gramb'ole 0 M. Grassano V S L T R I A L V V J J I N A B V E M P G J R R R

I. Grebennikov Grebinskii G. Grechko Greday C. Greenhow Gregora M. Grekhov Grenace 1 P. Gribkovekii I. Gridnev Grieeche Grigae I. Grigorchak I. Grigorchuk A. Grlgorenko L. Grlgorenko G. Grigoriev Grilli L.N. Grillo Grima A. Grinvalds Grrfo Groene Groessinger Groetzschel

S Grosewig H Gruber A N. Gruzintsev V G. Grybyk M Gryzinski B Gr£eta Bing-Lin Gu V A. Gubanov V A. Gubanova P Guenter M Guittard I R. Gulakov P G. Guletskii Z Guroienny H -E. Gumlich

(a) 116 735 (a) 115 369 (b) 153 307 ( a ) 111 301 (a) 116 287 (a) 112 757 (a) 111 417 (b) 153 139 (b) 151 407 (b) 156 K77 (b) 151 K1 (a) 113 K5 ( a ) 115 K113 (b) 154 623 ( a ) 111 K249 (b) 153 391

68.55 and 73.60; S8.13 71.35 and 78.55; S8.15 61.70; 76.30; 78.50; 78.60; Sil 72.15 and 73.60 64.70; 75.30; SI.2 62.20 and 78.20; S9.12 73.20 and 85; 61.70; 72.40 61.80 and 78.30; S7.ll 61.70 64.70 and 76.30; 72.20; S12.1 71.45; 63.20; S12.1 61 40 and 61 80; S12 78 20; Sll 61 70; 78. 50 78. 55; S9. 11 74 40 72 20 and 72 80; S8. 16 71 35 and 78 20 61 55 61.. 14 64. 70; SI. 2 71 10 78 55 71 55 78. 30; S7. 12 71 20 73 60 78. 65; S5. 11 76 60 71' 50 SI; SI .3; S4 71 35 and 78 65; S8. 12 61 80 S5 11 68 55 78 55 S8 77 20 77 80 Sil . 1 61 70 72 80 78. 50; S8 71 35 and 78 20 71 25 78. 20 S8 71 25 78 20 S10 . 1 61 80 and 79 20 78 55 71 55 S8. 16 76 30 S9. 11 61 60 64. 75 S8. 16 61 80 and 78 40; 78. 55; Sll 61 70 72 40 S5 11 76 80 and 78 70; SI. 1 75 50 SI 1; SI.2 75 50 75 30 SI. 1 61 70 and 61 80; S5. 11 63 20 78 30 S7 13; S8. H ; S9 61 80 and 68 55; 77. 55; S9. 61 10; S5 11 74 70; 75 30 78. 30; S10 . 15 78 20 and 78 55; 78. 60; S8. 64 60; 62 20 78. 20; S12 61 80 and 68 20 61 55; 62 20 64. 70; S4 64 60; 64 75 SI. 1; SI .2 71 25; SI 61 SI. 62 76 30; 61 80 S9. 11 66 30; 64 70 S12 61 16 and 61 60; S8 72 80 and 78 60; S8. 16 71 25 75 50 SI. 1; SI.2 78 55 71 55 S7 1 78 55 71 70 S8 15

Author Index H.-E. Gumlich Sheng-Li Guo

L.B. Guoba B.R.K. Gupta S.R. Gupta A.G. Gurevich V.H. Gurin A.F. Gurov V.A. Gurtov A.G. Guseindv A.M. Guseinov D.A. Guseinov N.G. Guseinov S.G. Guseinov Ya.Yu. Guse inov A.I. Gusev

N.A. Gushchina E.V. Guehchinskaya N. Guskos A.K. Gutakovskii J. Gutierrez M.Yu. Gutkin G.L. Gutsev M. Guymont M. Guzzi J. Gyulai

515 (b) (b) (b) (b) (b) (b) (b) (a) (b) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (b) (a) (a) (b) (a) (a) (b) (b)

154, 405 155, 317 156, 561 152, 577 153, K45 153.K167 154, K67 111, 507 155, K81 115, 569 116,K185 114, 265 115, K19 116, 769 113,K207 116.K173 115, K5 H I , K17 113,K207 151, 759 115, K53 116, 305 151, 211 111, 443 113, 353 154, 453 156, 11

(b) (a) (b) (b) (a) (a) (a) (b) (b) (a) (a) (a) (a) (a) (a)

153, 111, 152,' 153, 115, 111, 113, 153, 156, 113, 115, 112, 112, 115, 116,

161 451 K9 243 413 279 337 659 319 K5 599 237 721 75 561

M. V. A. H. H.

Haaee Hadjicontie Hadni Haefke Haefner

(b) (b) (a) (a) (a)

153, 156, 115, 116, 114,

225 393 587 39 419

J. H. T. F. A. R. E.

Haertwig Hagenschulte Hai Haider Hairie Hajduk Hajto

(a) (b) (b) (a) (a) (a) (a)

115, 154, 156, 111, 113, 113, 114,

369 71 641 71 489 295 587

3)1

78. 20; 75. 30; S8.15 78. 40; 71. 25; 71.35; S8 71. 35 and 71.70; 78.55; 71. 70 and 76.30; S9.16 71. 55 and 78.50; Sll.l 71. 70 and 76.30; S10.1 76. 30; S9; S9.12 68. 48; 79. 20; S7.12 62. 20 and 78.20; S9.12 77. 80; S9. 16 76. 50; S8. 16 61. 60 and 72.80; 75.50; 64. 70; S4 72. 20; 71. 55; 85; S5.ll 65. 40; S8. 16 72 40; S8 65 40 and 65.50; S8.16 61 70; 72.. 80; 75.50; S8 65 40; S8 16 78 20; S8 16 72 80; S10.1 73 40; 72 20; S10 74 70; SI 61 61 70; SI 61 65 40; SI 61 61 50; 61 12; SI.61 61 60 and 75.30; 76.60; SI 61; SI 62; S10 73 40; 71 25; S7.15 66 30; S7 11 74 70 and 76.30; S10.15 71 70; 76 30; S9.12 68 48; 61 80; S7.12; S7 75 80, SI 1; SI.2 61 70 and 68.48 71 55, 61 70; S5.ll 71 55 S5 11 61 16 and 61.60; S8 78 55 71 55; S8.16 61 .80 68 55; S5.ll 73 .40 68 55; S5.ll 61 .80 73 40; S5.ll 66 .30 61 70; S5.ll

15 S8.

SI.

15

71 .45 S12 66 .30 SI .2 78 .30 77 .80; Sil 66 .30 and 68.48; S9.ll 73 .40 and 85; 78.60; S7 . 11 S7 . 15 61 . 10 S5 .11 • 66 .30; SI .3 75 .30 and 75.70 61 . 16 61 .70; SI.2; SI. 3 71 .25 S7 . 16 61 .80 S5 . 11 78 .65 68 .55; S8

516

Author Index

N.C. Halder

J.F. Hamet K. Hammer

(a) (a) (b) (b) (a) (a) (a) (a)

112, 589 113, 511 156.K105 156.K113 114, 551 116, 729 114, 467 112, 667

Guosheng Han K. Handrich F. Hanna T. Hara

(a) (b) (a) (a)

114,K189 152, 377 115.K149 113, 459

Ch. Hardalov T.M. Haridasan

(a) (b) (b) (b) (a) (a) (b) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a)

113.K231 153, 131 153, 579 154, 55 111, 41 114, 127 151, 289 115, 285 116, 457 112, 769 112.K139 116, K43 116, K43 115,K215 114, K41 116, 545 116, 267

(a) (a) (a) (b) (b) (b) (a) (a)

115, 539 115, 467 115, K71 152, 519 151, 693 152, 303 115.K159 112, 395

(a) (a) (a) (b) (b) (a) (a) (a)

114, 599 111, K1'65 114, K67 154, K93 156, K97 114, 579 114, 551 114, 419

(a) (b) (b) (b) (b) (b) (b) (a) (a)

115, 257 151, 311 154, 405 151, 645 153, 295 151,K155 151, 231 116, 145 112, 765

T. Halicioglu C. Hamann

V.S. Häroutyunyan H. Hartmann 0. Hartmann M. Hartmanova T. Härtung F.S. Hasoon G.A. Hassan H.H. Hassan K. Hatakeyama Z. Hatzopoulos G. Hauck Lanylng He T. He Yizhen He Z.H. He P.C. Healy G. Heber M. Hecker K.H. Heckner V. Heera E. Hegenbarth

K.-Heilig A. Heilmann R. Heilmann W. Heimbrodt E. Heiner A. J. F. C.

Heinrich Heinrichs Heinricht Heiser

73.60; S10.1 73. 60; S10 68. 45; S7.12 68. 40 68. 55; S1.3; S12 68.20 and 68.55; S12 61.80; S5.ll 61. 80 and 68.55; 73.60; 78.65; S5 74.70; S10.15 61. 40; 63.50 64.70; 77.80; Sil .1 73 30 and 73.60; 73.20; S1 61; S7.12 72 80; S7.12 65 50; 63.90; S9. 12 63 20; 61.70; S8. 13 66 30; S8.13 61 10 61 70; 76.30; S8. 11 75 60 75 60 62 20 61.70 and 61.80; S12 61 60 and 7ß.30; S7.15; 88.15 62 20; S1.3 62 20; S1.3 75 50; S1.63 61 80 and 72.40; S7.12; S7.15 61 30; 64.70; S12 64 70 and 74.70; 61.10; S10.15 75 60; .76.80; S10 61 40 and 64.70; SI. 1; 51.2 74 70 and 79.60; S10.15 71 45 and 79.60; 74.10; Sil 75 25 and 75.50 75 25 and 75.50 62 20 61 80 and 68.55; 73.40; S10.15 68 .48 and 68.55; S5.11 65 .40; S7 66 .70 and 74.70; S10.15 61 .40 66 .70; S10.15 73 .20 and 73.40; S5.11; S10 68 .55; S1.3; S12 73 .40 and 85; 78 60; S7 .11; S7 15 71 55j 72.80; 78 55; S7 . 15 76 .30; 75.30; S8 15 78 .20; 75.30; S8 15 • 72 .10; 71.10; 78 20 72 .10; 72:20 72 .80; S1.61 72 10 61 .16; 68.20 61 .40 and 61.80; S12

517

Author Index B. Hellermann E:K. Henner W. Henrion E. Hensel W. Hergert R. Hergt H. Hermann E.B. Hermida A. Hernado L. Hernandez J. Herold F. Herrmann K.-H. Herrmann K.H. Herrmann R. Herrmann

(a) (b) (b) (a) (a) (a) (a) (b) (a) (a) (a) (a) (a) (a) (b) (b) (b) (a)

116,K195 151, 663 151, 375 112, 533 111,K253 111, 583 116, K19 151, 71 113, 187 113, 677 111, 59 112, 765 116, 113 114,K249 152, K5. 152, 481 153, K63 113, 159

(a) (a) (a) (a) (a) (b) (a) (a) (a) (a) (a)

116, 793 114, 765 116, 67 116, 81 116,K195 154, 71 116, 81 116, 123 114, 609 115, 149 114, 361

(a) (b) (a) (b) (a) (a) (a) (b)

111, 591 151.K171 113.K245 155, 427 114, 587 116, 81 116, 123 151, 175

Hirsch Hirte Hisatake Hlavka Hoehl

(a) (a) (a) (b) (a) (a) (a) (a)

114, 693 111, 315 111, 629 152, 505 116, 179 113,K245 112, 327 112, 419

M. Hoehne R. Hoehne B. Hoenerlage S. Hoenerlage M. Hoericke W. Hoerig S.R. Hoffman H. Hoffmann S. Hoffmann

(a) (b) (a) (b) (b) (a) (a) (b) (b) (b)

112, 715 156, 325 114, K93 151, 747 153, 403 113,K211 116,K119 155, K33 153, 391 153, 391

P. Hertel D. Hesse H. Hesse Th. Heumann J. Heydenreich R. Heyner M. Hidaka T.D. Hien Than Due Hien Nguyen Van Hieu T. Higashi J.F. Higgs P.G. Hill R. Hillebrand C.P. Hilton Y. Hirose R. Hirrle D. R. K. J. D.

77.20; 77.80; Sll.l 76.30 78.65; SI.61 68.48 and 68.55; Sl.l; S7 78.60 74.60 and 74.70; S10.15 61.10

62.20; S4; Sil 75.50; Sl.l; SI.2 73.30 and 73.40; S7.ll; S7.15 68.48; 61.16; 61.80; S7.12 61.40 and 61.80; S12 61.14 72.40 and 78.30; S8.15 72.20 and 74.70; S10.15 73.40; S7.13 74.70; S10.15 72.20 and 74.70; 76.60; S10.15 72.20 and 74.20; S10.15 78.20; 61..70; S10.15 68.48 and 68.55; SI.61 68.48 and 68.55; SI.61 77.20; 77.80; Sll.l 66.30; SI.3 68.48 and 68.55; SI.61 61.16; 61.70 68.20; 79.20; SI.2 64.70; S9.16 75.30 and 75.80; Sl.l; SI.2; SI. 4 75.30; 75.25; Sl.l; SI.4 74.20 75.50; Sil.2 63.20; S5.2 78.65; 68.55; S8 68.48 and 68.55; SI.61 61.16; 61.70 71.35 and 71.55; 76.90; 78.55; S8.ll; S8.15 72.15 and 75.50; 61.55; SI.2 78.55 and 78.60; 71.55; Sil.2 78.55 and 78.60; 71.55; Sil.2 71.20 and 79.60; S7 61.40; 61.16; 62.20; S12 75.50; Sil.2 61.70; 72.40; S 5 . U 61.70 and 61.80; 61.14; 68.48; S5.ll 61.80 and 68.55; 68.48; S5.ll 71.55 and 76.30; S5.ll 75.30 and 75.50; Sil.2 71.35 and 78.40; S9 78.20; S9 68.55; S7.15 61.70 and 78.50; S7. 12 71.20; 72.15; SI.2; SI. 3 78.55; 71.70; S8.15 78.55; 71.70; S8.15

Author Index

518 (a) (a) (a) (a) (a) (a) (a) (a) (a) (b) (b) (b) (a) (a) (a) (b) (a) (a) (a) (a) (a) (a) (a) (a) (a) (b) (a) (a)

111 243 113 483 114 215 114 225 116 703 111 335 89 111 114 K21 113 K89 23 151 155 339 156 259 114 127 113 615 87 115 155 K5 113 K103 112 757 112 821 111 K185 57 113 115 K83 116 K73 113 295 99 112 155 137 113 K127 K7 116

I}. Hunger A. Hupfer S.A. Hussein S. Hyodo

(b) (b) (a) (a) (a) (b) (a) (a) (b) (b) (a) (a) (a) (b) (a) (b) (a) (a)

61 154 53 155 114 651 116 K51 114 K127 152 335 113 453 114 K127 154 743 155 257' 116 389 111 367 111 655 155 723 112 721 152 505 114 K205 111 223

G. Iadoniei A. Ibarra T.D. Ibragimov E.M. Ibragimova A. Ibrahim R. Ichikawa

(b) (a) (b) (a) (a) (a)

153, 611 112, K53 155, 113 115,K255 115,K149 113, 459

S. Ichikawa S. Ichinose

(a) 115,K215 (b) 151, 95

A. Hofmann C.A. Hogarth

W. Hohenau B. Hohler E.K. Hollmann L. Holtmann V. Holy T. Holz D. Homme1 J. Horak Y. Horikago J. Horn A. Horodeiiski G. Horv/th A.A. Hosseini M. Hrabc^k L. Hrivnak A.Z. Hrynkiewicz A. Hu An Hu Jifan Hu Shu-Hui Hu Xiaoyu Hu Jinqi Huang L.J. Huang Qingzhen Huang Tzu-Yu Huang Xin-Fan Huang Yichuan Huang 0. Hudak F.K. Huebner I. Huettel J. HumliSek

75. 50; SI. 1; SI.2 68. 55 and 76.30; S10.15 78. 65; 68. 55; S10 . 15 68. 55 and 76.30; S10.15 73. 60; 73. 40 78. 60; S10 . 1 66. 30; 72. 15; SI. 2 79. 20; SI. 2 72. 40; Sil . 1 61. 10 and 61.70; S5.11 61. 10 and 61.70; S5.11 71. 20 61. 70; 76. 30; S8. 11 78. 30; S8. 15 61 70; 72. 20; S8 62 20; 63. 20; SI. 3 61 70 and 75.50; Sil.2 61 80 and 68.20 79 90 73 60 64 75; 61. 80; SI. 1 75 80; 61 80; SI. 1 71 25; S7 12; S7 15 61 80; S5 11 63 20; 78 35; SI. 2 68 30; 78 30; SI. 2; SI.3 75 30; SI 1; SI.4 61 40 and 78.70; 74.70; S10.15 61 70; 62 20; S4 61 70; 62 20; S4 61 60 and 74.70; S10.15 64 70; SI 1 78 45; 78 30; 78 55; Sil . 1 78 20; SI 61 68 48 and 73.40; S5.11 78 45; 78 30; 78 55; Sil . 1 75 40; Sll.l 75 30 and 75.50; Sil. 1 75 60 72 70 and 73.40; 78.60; S7 78 30; 73 40; S7 12 78 20; 71 25; S5 11 73 .40; 68 55; S5 11 71 .20 and 79.60; S7 72 .80; S8 72 .20; 61 70; S8 11

71 .35 and 71.38 78 .60; S10.1 63 .20 and 68.30; 78.30; S8 61 .80 and 78.60; S10.1; SI 64 .70; 77 80; Sll.l 73 .30 and 73.60; 73.20; SI .61; S7 12 75 .50; SI 63 63 .20 and 71.45

Author Index s. Ichinose J. O.A. Idiodi A. N. Igumentsev T. Ikari R. Ikeda Y. Ikeda K. Ikezakl V. P. Ikonnikov B. Iliescu I. 11 lev M. N. 11lev A. I. Ilinikh R. Ilkhamov R. A. Ilkhamov L. Ilkov M. A. Illarramendi R. M. Imamov T. Imura J. Iniguez J. I. Iniguez K. Inoue M. Inoue A., loan S. P. Ionov K.. Irmßcher T..I. Isaeva M,, Iehiguro K . Iehii M . Ishii T Ishikawa B .B. Ismail T .G. Ismailov H . Ißotalo A .G. Ivanchin R .D. Ivanchuk V .A. Ivanov V . I. Ivanov Z .G. Ivanov T . I. Ivanova V .A. Ivanshin I .N. Ivleva T . Iwaehita E .N. Izakovich

E.M. Jaboori A. Jacobi

519 (b) (b) (b) (a) (a) (a) (a) (a) (b) (b) (a) (b) (b) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (b) (b) (b) (b) (a) (a) (b) (a) (b) (b) (b) (a) (a) (b) (b) (b) (a) (a) (b) (a) (b) (b) (a) (b) (b) (a) (a)

155, 467 153, 489 153, 501 112, K71 115, K43 114.K143 116, 633 113, K67 151, 269 152, 51 115.K243 152, K29 154, 679 112, 743 112, 385 112, 781 111, 145 113, 187 113,K153 115.K133 116, 197 115.K261 113, 541 112, K43 113, K67 151, 441 152, 51 155, 397 155,K137 116, 755 115,K101 153, 683 112, 207 152, K63 155, K13 156,K167 115, 383 115, 237 155,K161 154, 305 155, K1 111, K99 112,Kill 151, 259 113, 439 152, 431 151, K53 115.K195 152, 289 154, 747 115,K195 116, K13

(a) (a) (a) (a)

113, 579 116,Kl 11 113,K135 116, 793

64. 10 .and 71. 45; S12 63. 10; 63. 20 63. 10; 63. 20 66. 30; Sil .2 71. 55; S8 66. 30 ,and 76. 60; S12 62. 40; SI. 2 73. 60; S12 75. 30; 76. 80;- Sil .2 61. 70; S9. 11 78. 20; S8. 15 78. 30; Sil . 1 74. 20 .and 74. 50 61. 80 .and 68. 48; SI.61 61. 80; 66. 30; S5. 11 61. 70 and 61. 80; S5. 11 64. 80; 72. 20; 75. 50; Sil .2 75. 50; SI. l; SI.21 61. 10 61. 10; 68. 20; S5. 11 61. 10; 78. 70; S7. 12 78..30; S8. 15 75..60; S10.1 75..60; SI]..2 73..60; S12 61..60; S8. 16 61..70; S9. 11 64..60; 71. 25; S8. 15 74,.20 71 .55 75 .60; S10 71 .55; 78. 50; 78. 55; S9. 11 78 .30; Sil. 1 78 .30; 63. 20; SI..63 62 .20; 63..20; 78..30; SI. 63 62 .20; 63..20; 78..30; SI. 63 61 . 10; S7.. 12 68 .55 arid 73. 60; S8. 13 78 .30 72 .20; 72..60; 76..30; S12 61 .70 72 .80 and 75. 50; S8 72 .40; S 8 75 .30 and 75. 50; 76.50; Sil.2 73 .40 and 74. 50; S7. 12 61 .50 and 64. 60 76 .30 arid 77. 80; Sil. 1 74 .70; 78 .30; 79 .20; 79. 60 75 . 10 arid 75. 30 75 . 10; 75 .30 74 .70; 78 .30;; 79 .20; 79. 60 61 .50; 74 .70;; S10.15

78.40; S10.15 78.65; 510.1 78.20; S8.15 72.20 and 74.20; S10.15

Author Index

520 B. Jacobs K. Jacobs E. Jaeger H.U. Jaeger J. Jagielski' L. Jahn M. Jain Mukesh Jain V.K. Jain R. Jakubas W. Jakubowski I. Jamnicky

(a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a) (a)

R. Jane8

(b) 152, 583

0. Jank ^ _ K. Jaraeiunae

J. Jgdrkowi'ak Li Jen Ho B. Jenichen T.A. Jenkins M. Jergel H. Jex M. Jezewski A. Jezierski K. Jezierski Jiaben Ji M.R. Ji Chun-Sheng Jia Wei Jia B.-H. Jiang Jianyi Jiang Shan Jiang Yi-Jian Jiang I. Jimenez M. Jimenez de Castro Changqing Jin

(a) (a) (a) (a) (a) (a) (a) (a) (b) (b) (a) (a) (a) (a) (a) (b) (a) (b) (a) (a) (a) (a) (a) (a) (a) (b) (b) (b) (a) (a)

114,K249 112, 375 114,K183 112, 385 112, 793 113.K217 114.K233 115, K63 155, 221 155, 559 112, 357 112, 781 113,K211 113, K71 111, 597 151, 703 116, 745 153, 185 112.K135 114.K189 115, K71 116, 371 114,K171 114, 451 115, K75 152, K33 156, 145 154, 439 112, K53 116, 267

Hanmin Jin Jirong Jin Mingzhi Jin N.Y. Ji/i Pei-Wan Jin Xiang-feng Jin Xin Jin M. Jirsa R.N. Joarder I.P. Jones L. Jonikas

(b) (a) (b) (a) (b) (a) (a) (a) (b) (a) (a)

151, 249 114,K189 151, 249 116, 91 154,K137 116, 709 114,K189 113, 573 156, 181 113, 57 112, 375

D. Jaworska M. Jayachandran M.K. Jayaraj C.K. Jayasankar

115, 257 111, 541 116.K219 116, 571 112, 343 116,K179 114, K29 115.K181 111, 625 111, K27 114,Kill 115, K17 115, 81 116, K77

71.55; 72.80; 78.55; S7.15 73.40 and 85; 78.55; S7.12 72.40 and 85; S8.ll; S8.12 61.70; 66.30; S5.ll 61.80; 61.70; Sl.l 75.70; 75.60; S4 73.60 and 78.65; S8.16 73.60 and 78.65; S8.16 76.30; S9.ll 64.70; 77.20; S12 78.20; S12 64.70 and 65.70; S12 66.30; S10 68.25 and 71.55; 72.50; S5.ll; S10 71.50 and 76.30; 71.38; 76.40; S9 72.40 and 78.30; S8.15 71.55 and 78.20; S5.ll 73.40; 68.55; S7.12; S9.15 61.80; 66.30; S5.ll 61.80; 78.20; S7.12 73.30; 85; S8.ll 78.60; S8.ll 72.80; S10.1 71.70; Sll.l 71.70; S9.16 61.80; 68.20; Sl.l 61.70 and 61.80; S5.11 68.55; S7.15 72.15; SI.2 75.80; Sl.l; SI.2 76.80; S9.ll 71.55; S7.ll 71.20; SI.2 78.40; S7 74.70; S10.15 74.70 and 79.60; S10.15 74.70; S10.15 68.60 and 76.30; S6 61.70; 78.70; SI.2 74.70; 62.40; S10.15 62.50 and 78.40; S8.15 63.20 and 78.30; 71.36 61.50 78.60; S10.1 64.70 and 74.70; 61.10; S10.15 76.80; Sl.l; SI.4 74.70; S10.15 76.80; Sl.l; SI.4 61.70; 61.16; SI.2; SI.3 71.38 73.60; 71.55; S12 74.70; S10.15 75.70 and 76.50; 75.60; Sil.2 65.50; 65.20; S2 64.75; 61.80; Sl.l 71.55 and 78.20; S5.ll

Author Index

521

J.F.J. Jordan s.R.#Joshi K. Jozwikoweki A. Juarez Ch . Jung Z. Jur&nek M. Jurczyk

(b) (a) (a) (b) (b) (a) (a) (a) (a)

155, 89 113, 603 111. 559 156, R89 155, 317 111. 603 112,R121 114.R219 115.R229

63.20; S10 78.70; S12 72.20; S8.15 71.55 and 78.55; 73. 40; S7.12 78. 40; 71.25; 71. 35; S8. 15 75. 50; Sl.'l 75. 50; S8.16 75. 50; Sl.l 75.50; SI.2

H. Raambre

(a) (a) (b)