HEMT Technology and Applications (Springer Tracts in Electrical and Electronics Engineering) 9789811921643, 9789811921650, 9811921644

Table of contents :
Contents
Editors and Contributors
Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics
1 Introduction
2 Spontaneous and Piezoelectric Polarization of AlxGa1−xN/AlyGa1−yN Heterostructure
3 AlGaN-Channel-Based HEMTs for High-Frequency Electronics Application
3.1 Device Scaling for High-Frequency Application
3.2 Device Configuration of AlGaN Channel HEMTs
4 AlGaN Channel HEMTs in Power Switching Applications
5 Conclusion
References
Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs
1 Introduction
2 Causes of Breakdown in AlGaN/GaN HEMTs
2.1 Leakage Currents Originating from the Gate Structure
2.2 Punch-Through Effect
2.3 Breakdown Along the Channel Region
2.4 Breakdown Through the Buffer Layer
2.5 Breakdown Due to Impact Ionization
3 Breakdown Strength
4 Methods of Increasing the Breakdown Voltage
4.1 Field-Plate Approach
4.2 Designing of Potential Barriers in the Epitaxial Buffer Layer
4.3 Epitaxial Layer Engineering: Pre-epitaxy Implantation
4.4 Schottky Source–Drain Contacts
4.5 Use of High K Dielectric Passivation Layer in HEMT
4.6 Use of Electron-Blocking Layer
4.7 Optimization of the Gate to Drain Spacing
4.8 Modulation of Electric Field Using Partial GaN Cap Layer
4.9 Double-Channel HEMT
5 Scaling Technologies of AlGaN/GaN HEMTs
References
Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT
1 Introduction
2 Device Model Description and Material Properties
2.1 Device Structure
2.2 Material Properties and Equations
3 Simulation Results and Discussions
4 Conclusion
References
Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review
1 Introduction
2 Electrical Characterization of ZnO
3 Effect of Temperature on 2DEG Density (ns) and Fermi Energy Level (EF) of AlGaN/GaN and MgZnO/ZnO HEMT
4 Optical Gain and Internal Electric Field in AlGaN/GaN and MgZnO/ZnO Quantum Well
5 Conclusion
References
Analytical Modeling of Electric Field and Breakdown Voltage Characteristics of AlInN/GaN HEMT with Field Plates
1 Introduction
2 Device Structure
3 Model Development
4 Electric Field at the Heterointerface
5 Breakdown Voltage
6 Conclusion
References
Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT
1 Introduction
2 Device Architecture and Simulation
3 Results and Discussion
4 Conclusion
References
3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics
1 Introduction
2 3D Simulation Framework and Mobility Models
3 Results and Discussion
4 RF Characteristics
5 Conclusion
References
Operation Principle of AlGaN/GaN HEMT
1 Introduction
2 AlGaN/GaN HEMT Structure
3 Polarization Effects
4 Two-Dimensional Electron Gas (2DEG)
4.1 Origin of 2DEG in GaN-Based HEMT
4.2 Doped Barrier Layer
4.3 Undoped Barrier Layer
4.4 Energy Band Diagram
5 Conclusion
References
Multigate MOS-HEMT
1 Introduction
2 GaN HEMT
3 GaN MOS-HEMT
4 Multigate GaN MOS-HEMT
5 Advantage of Underlapped Structure
6 Quaternary InAlGaN/GaN DG-MOS HEMT
References
Enhancement-Mode MOSHEMT
1 Introduction
2 Model Development and Simulation
2.1 Effect of Oxide Layer on 2DEG
2.2 Oxide Interfacial Charge Effect on the Threshold Voltage
3 Conclusion
References
Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications
1 Introduction
2 Motivation Towards HEMT
3 AlGaN/GaN HEMT Structure
4 Performance Analysis of AlGaN/GaN HEMT
4.1 The Control of Charge Employed with 2D Distributive Design for I–V Characteristics
4.2 Surface Charge Relying on Parasitic Components
4.3 Control of Gate Voltage Over the Crucial 2DEG Concentration
4.4 Dual Gate AlGaN/GaN HEMT
4.5 Role of Temperature
5 Factors Affecting the Performance of GaN HEMT
5.1 Trapping Effects
5.2 Surface Passivation
5.3 Field Plate Arrangement
5.4 Dominance Caused by the Back-Barrier Layer
6 Conclusion
References
High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis
1 Introduction
2 Basic Principles
3 Different HEMT Structures
3.1 GaN‐Based HEMTs
3.2 Ga–As‐Based HEMTs
3.3 InP‐Based HEMTs
4 TCAD Simulations
4.1 Transport Model
4.2 “Drift–Diffusion” Transport Model
4.3 Thermodynamic Model
4.4 Hydrodynamic Model
4.5 Generation-Recombination Process
4.6 High-Field Saturation Model
4.7 Density Gradient Model
5 Performance Analysis Using TCAD-Based Simulations: Some Recent Studies
5.1 Performance Analysis of AlGaN/GaN HEMT
5.2 Performance Analysis of Nanoscale DG Heterostructure MOS-HEMT
6 Applications of HEMT
6.1 Cellular Communication
6.2 Satellite Communication
6.3 Power Amplifiers
6.4 Various Sensors
7 Conclusion
References
Emerging Device Architectures for Space Electronics
1 Introduction
2 Device Architectures Under Consideration
2.1 A Π-Shaped AlGaN/GaN HEMT
2.2 Buffer-Free AlGaN/GaN HEMTs
3 Radiation Environment and Simulation Methodology
3.1 Single Event Transients
3.2 Proton Radiation Effects
4 Results and Discussions
4.1 Robustness Against Heavy Ion Particle Stikes
4.2 Proton Irradiation Effects on Buffer-Free HEMT
5 Conclusions
References
Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways
1 Introduction
2 β-(AlxGa1−x)2O3/β-Ga2O3 Heterostructures
3 III-N (III = Ga, Al, In)/β-Ga2O3 Heterojunction
4 Conclusion
References
Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design
1 Introduction
2 Device Structure and Its Physics
3 Results and Discussions
4 Conclusion
References
HEMT for Biosensing Applications
1 Introduction
1.1 Characteristic of Biosensor
1.2 Working Principle of HEMT as Biosensor
2 MOSHEMT Structure and Characteristics
3 State-Of-Art Research of GaN MOSHEMT with Different Material Systems
4 List of Sensitivity Parameters
5 Advantages of MOSHEMT
6 Conclusion
References