Handbook of Nanophysics, Volume I: Principles and Methods [1 ed.] 1420075403, 9781420075403

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Handbook of Nanophysics

Handbook of Nanophysics: Principles and Methods Handbook of Nanophysics: Clusters and Fullerenes Handbook of Nanophysics: Nanoparticles and Quantum Dots Handbook of Nanophysics: Nanotubes and Nanowires Handbook of Nanophysics: Functional Nanomaterials Handbook of Nanophysics: Nanoelectronics and Nanophotonics Handbook of Nanophysics: Nanomedicine and Nanorobotics

Principles and Methods

Edited by

Klaus D. Sattler

Boca Raton London New York

CRC Press is an imprint of the Taylor & Francis Group, an informa business

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CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742 © 2011 by Taylor and Francis Group, LLC CRC Press is an imprint of Taylor & Francis Group, an Informa business No claim to original U.S. Government works Printed in the United States of America on acid-free paper 10 9 8 7 6 5 4 3 2 1 International Standard Book Number: 978-1-4200-7540-3 (Hardback) This book contains information obtained from authentic and highly regarded sources. Reasonable efforts have been made to publish reliable data and information, but the author and publisher cannot assume responsibility for the validity of all materials or the consequences of their use. The authors and publishers have attempted to trace the copyright holders of all material reproduced in this publication and apologize to copyright holders if permission to publish in this form has not been obtained. If any copyright material has not been acknowledged please write and let us know so we may rectify in any future reprint. Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced, transmitted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, microfilming, and recording, or in any information storage or retrieval system, without written permission from the publishers. For permission to photocopy or use material electronically from this work, please access www.copyright.com (http://www.copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC), 222 Rosewood Drive, Danvers, MA 01923, 978-750-8400. CCC is a not-for-profit organization that provides licenses and registration for a variety of users. For organizations that have been granted a photocopy license by the CCC, a separate system of payment has been arranged. Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used only for identification and explanation without intent to infringe. Library of Congress Cataloging-in-Publication Data Handbook of nanophysics. Principles and methods / editor, Klaus D. Sattler. p. cm. “A CRC title.” Includes bibliographical references and index. ISBN 978-1-4200-7540-3 (alk. paper) 1. Microphysics--Handbooks, manuals, etc. 2. Nanotechnology--Handbooks, manuals, etc. 3. Nanoscience--Handbooks, manuals, etc. I. Sattler, Klaus D. QC173.4.M5H358 2009 620’.5--dc22 Visit the Taylor & Francis Web site at http://www.taylorandfrancis.com and the CRC Press Web site at http://www.crcpress.com

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Contents Preface........................................................................................................................................................... ix Acknowledgments ........................................................................................................................................ xi Editor .......................................................................................................................................................... xiii Contributors .................................................................................................................................................xv

PART I

1

Design and Theory

The Quantum Nature of Nanoscience ................................................................................................1-1 Marvin L. Cohen

2

Theories for Nanomaterials to Realize a Sustainable Future ........................................................... 2-1 Rodion V. Belosludov, Natarajan S. Venkataramanan, Hiroshi Mizuseki, Oleg S. Subbotin, Ryoji Sahara, Vladimir R. Belosludov, and Yoshiyuki Kawazoe

3

Tools for Predicting the Properties of Nanomaterials ...................................................................... 3-1 James R. Chelikowsky

4

Design of Nanomaterials by Computer Simulations ......................................................................... 4-1 Vijay Kumar

5

Predicting Nanocluster Structures .................................................................................................... 5-1 John D. Head

PART I I Nanoscale Systems

6

The Nanoscale Free-Electron Model ................................................................................................. 6-1 Daniel F. Urban, Jérôme Bürki, Charles A. Staford, and Hermann Grabert

7

Small-Scale Nonequilibrium Systems .................................................................................................7-1 Peder C. F. Møller and Lene B. Oddershede

8

Nanoionics .......................................................................................................................................... 8-1 Joachim Maier

9

Nanoscale Superconductivity ............................................................................................................ 9-1 Francois M. Peeters, Arkady A. Shanenko, and Mihail D. Croitoru

10

One-Dimensional Quantum Liquids ............................................................................................... 10-1 Kurt Schönhammer

11

Nanof luidics of Thin Liquid Films ................................................................................................... 11-1 Markus Rauscher and Siegfried Dietrich v

vi

12

Contents

Capillary Condensation in Confined Media ................................................................................... 12-1 Elisabeth Charlaix and Matteo Ciccotti

13

Dynamics at the Nanoscale .............................................................................................................. 13-1 A. Marshall Stoneham and Jacob L. Gavartin

14

Electrochemistry and Nanophysics ..................................................................................................14-1 Werner Schindler

PART II I Thermodynamics

15

Nanothermodynamics ...................................................................................................................... 15-1 Vladimir García-Morales, Javier Cervera, and José A. Manzanares

16

Statistical Mechanics in Nanophysics ............................................................................................. 16-1 Jurij Avsec, Greg F. Naterer, and Milan Marcˇicˇ

17

Phonons in Nanoscale Objects.......................................................................................................... 17-1 Arnaud Devos

18

Melting of Finite-Sized Systems ...................................................................................................... 18-1 Dilip Govind Kanhere and Sajeev Chacko

19

Melting Point of Nanomaterials ...................................................................................................... 19-1 Pierre Letellier, Alain Mayaf re, and Mireille Turmine

20

Phase Changes of Nanosystems ....................................................................................................... 20-1 R. Stephen Berry

21

Thermodynamic Phase Stabilities of Nanocarbon ...........................................................................21-1 Qing Jiang and Shuang Li

PART IV Nanomechanics

22

Computational Nanomechanics ...................................................................................................... 22-1 Wing Kam Liu, Eduard G. Karpov, and Yaling Liu

23

Nanomechanical Properties of the Elements .................................................................................. 23-1 Nicola M. Pugno

24

Mechanical Models for Nanomaterials ............................................................................................ 24-1 Igor A. Guz, Jeremiah J. Rushchitsky, and Alexander N. Guz

PART V Nanomagnetism and Spins

25

Nanomagnetism in Otherwise Nonmagnetic Materials ................................................................. 25-1 Tatiana Makarova

26

Laterally Confined Magnetic Nanometric Structures .................................................................... 26-1 Sergio Valeri, Alessandro di Bona, and Gian Carlo Gazzadi

27

Nanoscale Dynamics in Magnetism .................................................................................................27-1 Yves Acremann and Hans Christoph Siegmann

28

Spins in Organic Semiconductor Nanostructures .......................................................................... 28-1 Sandipan Pramanik, Bhargava Kanchibotla, and Supriyo Bandyopadhyay

vii

Contents

PART V I

29

Nanoscale Methods

Nanometrology ................................................................................................................................. 29-1 Stergios Logothetidis

30

Aerosol Methods for Nanoparticle Synthesis and Characterization .............................................. 30-1 Andreas Schmidt-Ott

31

Tomography of Nanostructures ........................................................................................................ 31-1 Günter Möbus and Zineb Saghi

32

Local Probes: Pushing the Limits of Detection and Interaction .................................................... 32-1 Adam Z. Stieg and James K. Gimzewski

33

Quantitative Dynamic Atomic Force Microscopy .......................................................................... 33-1 Robert W. Stark and Martin Stark

34

STM-Based Techniques Combined with Optics .............................................................................. 34-1 Hidemi Shigekawa, Osamu Takeuchi, Yasuhiko Terada, and Shoji Yoshida

35

Contact Experiments with a Scanning Tunneling Microscope ...................................................... 35-1 Jörg Kröger

36

Fundamental Process of Near-Field Interaction ............................................................................. 36-1 Hirokazu Hori and Tetsuya Inoue

37

Near-Field Photopolymerization and Photoisomerization ..............................................................37-1 Renaud Bachelot, Jérôme Plain, and Olivier Soppera

38

Soft X-Ray Holography for Nanostructure Imaging ....................................................................... 38-1 Andreas Scherz

39

Single-Biomolecule Imaging ............................................................................................................ 39-1 Tsumoru Shintake

40

Amplified Single-Molecule Detection ............................................................................................. 40-1 Ida Grundberg, Irene Weibrecht, and Ulf Landegren

Index .................................................................................................................................................... Index-1

Preface he Handbook of Nanophysics is the i rst comprehensive reference to consider both fundamental and applied aspects of nanophysics. As a unique feature of this work, we requested contributions to be submitted in a tutorial style, which means that state-of-the-art scientiic content is enriched with fundamental equations and illustrations in order to facilitate wider access to the material. In this way, the handbook should be of value to a broad readership, from scientiically interested general readers to students and professionals in materials science, solid-state physics, electrical engineering, mechanical engineering, computer science, chemistry, pharmaceutical science, biotechnology, molecular biology, biomedicine, metallurgy, and environmental engineering.

What Is Nanophysics? Modern physical methods whose fundamentals are developed in physics laboratories have become critically important in nanoscience. Nanophysics brings together multiple disciplines, using theoretical and experimental methods to determine the physical properties of materials in the nanoscale size range (measured by millionths of a millimeter). Interesting properties include the structural, electronic, optical, and thermal behavior of nanomaterials; electrical and thermal conductivity; the forces between nanoscale objects; and the transition between classical and quantum behavior. Nanophysics has now become an independent branch of physics, simultaneously expanding into many new areas and playing a vital role in ields that were once the domain of engineering, chemical, or life sciences. his handbook was initiated based on the idea that breakthroughs in nanotechnology require a irm grounding in the principles of nanophysics. It is intended to fulill a dual purpose. On the one hand, it is designed to give an introduction to established fundamentals in the ield of nanophysics. On the other hand, it leads the reader to the most signiicant recent developments in research. It provides a broad and in-depth coverage of the physics of nanoscale materials and applications. In each chapter, the aim is to ofer a didactic treatment of the physics underlying the applications alongside detailed experimental results, rather than focusing on particular applications themselves. he handbook also encourages communication across borders, aiming to connect scientists with disparate interests to begin

interdisciplinary projects and incorporate the theory and methodology of other ields into their work. It is intended for readers from diverse backgrounds, from math and physics to chemistry, biology, and engineering. he introduction to each chapter should be comprehensible to general readers. However, further reading may require familiarity with basic classical, atomic, and quantum physics. For students, there is no getting around the mathematical background necessary to learn nanophysics. You should know calculus, how to solve ordinary and partial diferential equations, and have some exposure to matrices/linear algebra, complex variables, and vectors.

External Review All chapters were extensively peer reviewed by senior scientists working in nanophysics and related areas of nanoscience. Specialists reviewed the scientiic content and nonspecialists ensured that the contributions were at an appropriate technical level. For example, a physicist may have been asked to review a chapter on a biological application and a biochemist to review one on nanoelectronics.

Organization he Handbook of Nanophysics consists of seven books. Chapters in the irst four books (Principles and Methods, Clusters and Fullerenes, Nanoparticles and Quantum Dots, and Nanotubes and Nanowires) describe theory and methods as well as the fundamental physics of nanoscale materials and structures. Although some topics may appear somewhat specialized, they have been included given their potential to lead to better technologies. he last three books (Functional Nanomaterials, Nanoelectronics and Nanophotonics, and Nanomedicine and Nanorobotics) deal with the technological applications of nanophysics. he chapters are written by authors from various ields of nanoscience in order to encourage new ideas for future fundamental research. Ater the irst book, which covers the general principles of theory and measurements of nanoscale systems, the organization roughly follows the historical development of nanoscience. Cluster scientists pioneered the ield in the 1980s, followed by extensive ix

x

work on fullerenes, nanoparticles, and quantum dots in the 1990s. Research on nanotubes and nanowires intensiied in subsequent years. Ater much basic research, the interest in applications such as the functions of nanomaterials has grown. Many bottom-up

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Preface

and top-down techniques for nanomaterial and nanostructure generation were developed and made possible the development of nanoelectronics and nanophotonics. In recent years, real applications for nanomedicine and nanorobotics have been discovered.

Acknowledgments Many people have contributed to this book. I would like to thank the authors whose research results and ideas are presented here. I am indebted to them for many fruitful and stimulating discussions. I would also like to thank individuals and publishers who have allowed the reproduction of their igures. For their critical reading, suggestions, and constructive criticism, I thank the referees. Many people have shared their expertise and have commented on the manuscript at various

stages. I consider myself very fortunate to have been supported by Luna Han, senior editor of the Taylor & Francis Group, in the setup and progress of this work. I am also grateful to Jessica Vakili, Jill Jurgensen, Joette Lynch, and Glenon Butler for their patience and skill with handling technical issues related to publication. Finally, I would like to thank the many unnamed editorial and production staf members of Taylor & Francis for their expert work. Klaus D. Sattler Honolulu, Hawaii

xi

Editor Klaus D. Sattler pursued his undergraduate and master’s courses at the University of Karlsruhe in Germany. He received his PhD under the guidance of Professors G. Busch and H.C. Siegmann at the Swiss Federal Institute of Technology (ETH) in Zurich, where he was among the irst to study spin-polarized photoelectron emission. In 1976, he began a group for atomic cluster research at the University of Konstanz in Germany, where he built the irst source for atomic clusters and led his team to pioneering discoveries such as “magic numbers” and “Coulomb explosion.” He was at the University of California, Berkeley, for three years as a Heisenberg Fellow, where he initiated the i rst studies of atomic clusters on surfaces with a scanning tunneling microscope. Dr. Sattler accepted a position as professor of physics at the University of Hawaii, Honolulu, in 1988. here, he initiated a research group for nanophysics, which, using scanning probe microscopy, obtained the irst atomic-scale images of carbon nanotubes directly conirming the graphene network. In 1994,

his group produced the irst carbon nanocones. He has also studied the formation of polycyclic aromatic hydrocarbons (PAHs) and nanoparticles in hydrocarbon lames in collaboration with ETH Zurich. Other research has involved the nanopatterning of nanoparticle i lms, charge density waves on rotated graphene sheets, band gap studies of quantum dots, and graphene foldings. His current work focuses on novel nanomaterials and solar photocatalysis with nanoparticles for the puriication of water. Among his many accomplishments, Dr. Sattler was awarded the prestigious Walter Schottky Prize from the German Physical Society in 1983. At the University of Hawaii, he teaches courses in general physics, solid-state physics, and quantum mechanics. In his private time, he has worked as a musical director at an avant-garde theater in Zurich, composed music for theatrical plays, and conducted several critically acclaimed musicals. He has also studied the philosophy of Vedanta. He loves to play the piano (classical, rock, and jazz) and enjoys spending time at the ocean, and with his family.

xiii

Contributors Yves Acremann PULSE Institute SLAC National Accelerator Laboratory Stanford, California Jurij Avsec Faculty of Energy Technology University of Maribor Krško, Slovenia Renaud Bachelot Laboratoire de Nanotechnologie et d’Instrumentation Optique Institut Charles Delaunay Université de Technologie de Troyes Troyes, France Supriyo Bandyopadhyay Department of Electrical and Computer Engineering Virginia Commonwealth University Richmond, Virginia Rodion V. Belosludov Institute for Materials Research Tohoku University Sendai, Japan Vladimir R. Belosludov Institute for Materials Research Tohoku University Sendai, Japan

Alessandro di Bona CNR-Institute of Nanoscience-Center S3 Modena, Italy

Jérôme Bürki Department of Physics and Astronomy California State University Sacramento, California

Javier Cervera Faculty of Physics University of Valencia Valencia, Spain

Sajeev Chacko School of Information Science Jawaharlal Nehru University New Delhi, India

Elisabeth Charlaix Laboratoire de Physique de la Matière Condensée et Nanostructures Université Claude Bernard Lyon 1 Villeurbanne, France

and Nikolaev Institute of Inorganic Chemistry Novosibirsk, Russia R. Stephen Berry Department of Chemistry he James Franck Institute he University of Chicago Chicago, Illinois

James R. Chelikowsky Center for Computational Materials Institute for Computational Engineering and Sciences and Department of Physics and Chemical Engineering University of Texas Austin, Texas

Matteo Ciccotti Laboratoire des Colloïdes, Verres et Nanomatériaux Université Montpellier 2 Montpellier, France Marvin L. Cohen Department of Physics University of California, Berkeley and Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley, California Mihail D. Croitoru Department of Physics University of Antwerp Antwerp, Belgium Arnaud Devos Institut d’Électronique, de Microélectronique et de Nanotechnologie Unité Mixte de Recherche Centre national de la recherche scientiique Villeneuve d’Ascq, France Siegfried Dietrich Max-Planck-Institut für Metallforschung and Institut für heoretische und Angewandte Physik Universität Stuttgart Stuttgart, Germany Vladimir García-Morales Physik Department Technische Universität München Munich, Germany xv

xvi

Jacob L. Gavartin Accelrys Ltd. Cambridge, United Kingdom Gian Carlo Gazzadi CNR-Institute of Nanoscience-Center S3 Modena, Italy James K. Gimzewski California NanoSystems Institute and Department of Chemistry and Biochemistry University of California, Los Angeles Los Angeles, California and Material Nanoarchitectonics National Institute for Materials Science Tsukuba-Shi, Japan Hermann Grabert Physikalisches Institut and Freiburg Institute for Advanced Studies Albert-Ludwigs-Universität Freiburg, Germany Ida Grundberg Department of Genetics and Pathology Rudbeck Laboratory Uppsala University Uppsala, Sweden Alexander N. Guz Timoshenko Institute of Mechanics Kiev, Ukraine Igor A. Guz Centre for Micro- and Nanomechanics University of Aberdeen Scotland, United Kingdom John D. Head Department of Chemistry University of Hawaii Honolulu, Hawaii Hirokazu Hori Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu, Japan

Contributors

Tetsuya Inoue Department of Electronics Yamanashi Industrial Technology College Kosyu, Japan

Pierre Letellier Laboratoire Interfaces et Systèmes Electrochimiques Université Pierre et Marie Curie-Paris 6 Paris, France

Qing Jiang Key Laboratory of Automobile Materials Ministry of Education and Department of Materials Science and Engineering Jilin University Changchun, China

Shuang Li Key Laboratory of Automobile Materials Ministry of Education and Department of Materials Science and Engineering Jilin University Changchun, China

Bhargava Kanchibotla Department of Electrical and Computer Engineering Virginia Commonwealth University Richmond, Virginia

Wing Kam Liu Department of Mechanical Engineering Northwestern University Evanston, Illinois

Dilip Govind Kanhere Department of Physics University of Pune Pune, India

Yaling Liu Department of Mechanical & Aerospace Engineering University of Texas at Arlington Arlington, Texas

Eduard G. Karpov Department of Civil & Materials Engineering University of Illinois at Chicago Chicago, Illinois Yoshiyuki Kawazoe Institute for Materials Research Tohoku University Sendai, Japan Jörg Kröger Institut für Experimentelle und Angewandte Physik Christian-Albrechts-Universität zu Kiel Kiel, Germany Vijay Kumar Dr. Vijay Kumar Foundation Haryana, India Ulf Landegren Department of Genetics and Pathology Rudbeck Laboratory Uppsala University Uppsala, Sweden

Stergios Logothetidis Laboratory for hin Films— Nanosystems and Nanometrology Department of Physics Aristotle University of hessaloniki hessaloniki, Greece Joachim Maier Max Planck Institute for Solid State Research Stuttgart, Germany Tatiana Makarova Department of Physics Umeå University Umeå, Sweden and Iofe Physico-Technical Institute Saint Petersburg, Russia José A. Manzanares Faculty of Physics University of Valencia Valencia, Spain

xvii

Contributors

Milan Marčič Faculty of Mechanical Engineering University of Maribor Maribor, Slovenia Alain Mayaf re Laboratoire Interfaces et Systèmes Electrochimiques Université Pierre et Marie Curie-Paris 6 Paris, France Hiroshi Mizuseki Institute for Materials Research Tohoku University Sendai, Japan Günter Möbus Department of Engineering Materials University of Sheield Sheield, United Kingdom Peder C. F. Møller he Niels Bohr Institute University of Copenhagen Copenhagen, Denmark Greg F. Naterer Institute of Technology University of Ontario Oshawa, Ontario, Canada Lene B. Oddershede he Niels Bohr Institute University of Copenhagen Copenhagen, Denmark Francois M. Peeters Department of Physics University of Antwerp Antwerp, Belgium Jérôme Plain Laboratoire de Nanotechnologie et d’Instrumentation Optique Institut Charles Delaunay Université de Technologie de Troyes Troyes, France Sandipan Pramanik Department of Electrical and Computer Engineering University of Alberta Edmonton, Alberta, Canada

Nicola M. Pugno Dipartimento di Ingegneria Strutturale e Geotecnica Politecnico di Torino Turin, Italy Markus Rauscher Max-Planck-Institut für Metallforschung and Institut für heoretische und Angewandte Physik Universität Stuttgart Stuttgart, Germany Jeremiah J. Rushchitsky Timoshenko Institute of Mechanics Kiev, Ukraine Zineb Saghi Department of Engineering Materials University of Sheield Sheield, United Kingdom Ryoji Sahara Institute for Materials Research Tohoku University Sendai, Japan Andreas Scherz Stanford Institute for Material and Energy Science SLAC National Accelerator Laboratory Menlo Park, California Werner Schindler Department of Physics Technische Universität München Munich, Germany Andreas Schmidt-Ott Faculty of Applied Sciences Delt University of Technology Delt, the Netherlands Kurt Schönhammer Institute for heoretical Physics Georg-August University Goettingen, Germany Arkady A. Shanenko Department of Physics University of Antwerp Antwerp, Belgium

Hidemi Shigekawa Institute of Applied Physics University of Tsukuba Tsukuba, Japan Tsumoru Shintake RIKEN SPring-8 Center Sayo, Hyogo, Japan Hans Christoph Siegmann (deceased) PULSE Institute SLAC National Accelerator Laboratory Stanford, California Olivier Soppera Département de Photochimie Générale Centre national de la recherche scientiique Mulhouse, France Charles A. Staford Department of Physics University of Arizona Tucson, Arizona Martin Stark Center for Nanoscience Ludwig-Maximilians-Universität München Munich, Germany Robert W. Stark Center for Nanoscience Ludwig-Maximilians-Universität München Munich, Germany Adam Z. Stieg California NanoSystems Institute Los Angeles, California and Material Nanoarchitectonics National Institute for Materials Science Tsukuba-Shi, Japan A. Marshall Stoneham London Centre for Nanotechnology Department of Physics and Astronomy University College London London, United Kingdom

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Oleg S. Subbotin Institute for Materials Research Tohoku University Sendai, Japan and Nikolaev Institute of Inorganic Chemistry Novosibirsk, Russia Osamu Takeuchi Institute of Applied Physics University of Tsukuba Tsukuba, Japan Yasuhiko Terada Institute of Applied Physics University of Tsukuba Tsukuba, Japan

Contributors

Mireille Turmine Laboratoire Interfaces et Systèmes Electrochimiques Université Pierre et Marie Curie-Paris 6 Paris, France Daniel F. Urban Physikalisches Institut Albert-Ludwigs-Universität Freiburg, Germany Sergio Valeri Department of Physics University of Modena and Reggio Emilia and CNR-Institute of Nanoscience-Center S3 Modena, Italy

Natarajan S. Venkataramanan Institute for Materials Research Tohoku University Sendai, Japan Irene Weibrecht Department of Genetics and Pathology Rudbeck Laboratory Uppsala University Uppsala, Sweden Shoji Yoshida Institute of Applied Physics University of Tsukuba Tsukuba, Japan

I Design and Theory 1 he Quantum Nature of Nanoscience Marvin L. Cohen ....................................................................................... 1-1 Introduction • Conceptual Models • Nanotubes, Fullerenes, and Graphene • Some Properties and Applications • Acknowledgments • References

2 heories for Nanomaterials to Realize a Sustainable Future Rodion V. Belosludov, Natarajan S. Venkataramanan, Hiroshi Mizuseki, Oleg S. Subbotin, Ryoji Sahara, Vladimir R. Belosludov, and Yoshiyuki Kawazoe........................................................................................................................................................................... 2-1 Introduction • Molecular Level Description of hermodynamics of Clathrate Systems • Gas Hydrates as Potential Nano-Storage Media • Metal–Organic Framework Materials • Conclusions • Acknowledgments • References

3 Tools for Predicting the Properties of Nanomaterials

James R. Chelikowsky ...........................................................3-1

Introduction • he Quantum Problem • Applications • Conclusions • Acknowledgments • References

4 Design of Nanomaterials by Computer Simulations

Vijay Kumar .............................................................................4-1

Introduction • Small Is Diferent: he Unfolding of Surprises • Method of Calculation • Clusters and Nanoparticles • Nanostructures of Compounds • Summary • Acknowledgments • References

5 Predicting Nanocluster Structures John D. Head ..........................................................................................................5-1 Introduction • Cluster Structural Features on the Potential Energy Surface • Considerations in Cluster Energy Calculations • Computational Approach to Finding a Global Minimum • Example Applications: Predicting Structures of Passivated Si Clusters • Summary • Acknowledgments • References

I-1

1 The Quantum Nature of Nanoscience Marvin L. Cohen University of California, Berkeley and Lawrence Berkeley National Laboratory

1.1 Introduction ............................................................................................................................. 1-1 1.2 Conceptual Models.................................................................................................................. 1-1 1.3 Nanotubes, Fullerenes, and Graphene ................................................................................. 1-2 1.4 Some Properties and Applications ........................................................................................ 1-3 Acknowledgments ............................................................................................................................... 1-3 References............................................................................................................................................. 1-3

1.1 Introduction

1.2 Conceptual Models

Although research on nanoscale-sized objects has been ongoing for a century or more, over the last few decades, there has been a collective efort in bringing together researchers to this area from diferent disciplines to form a new discipline “nanoscience” that focuses on the properties of nanostructures (Saito and Zettl 2008). he extension to nonstructures from studies of molecules and clusters is natural. here are also other conceptual paths from studies of periodic systems, which allow the application of concepts and experimental techniques originally designed for macroscopic solids (Cohen 2005). As a result, scientists and engineers have found common ground in the ield of nanoscience. he physical, chemical, computational, and biological sciences have overlapping interests associated with the nanoscale and its associated energy scale. he same holds true for electrical, mechanical, and computer engineering ields. Structures built from atoms measuring around one-tenth of a nanometer (nm) with bonds between them of the order of 0.3 nm allow the building of molecular structures of the order of several nanometers and much larger. h is is how the structures of the C 60 molecule (Kroto et al. 1985), nanotubes (Iijima 1991, Rubio et al. 1994, Chopra et al. 1995), DNA, viruses, among others, are made. Understanding electronic behavior is essential for these systems. he size scale i xes the coni nement lengths of the electrons; hence, it also sets the energy scale. he theoretical tool applied to understand the size and energy domain of nanostructures is quantum mechanics. he wave nature of the particles has to be considered to explain electronic, structural, mechanical, and other properties of the nanostructures of interest.

Building from the bottom up is an obvious methodology for constructing models to ascertain the properties of nanostructures. his is the usual approach in quantum chemistry. Since we know the constituent atoms of interest and sometimes their structural arrangements, and as there are tested procedures for computing many properties of molecules and clusters, this is a valuable approach for dealing with nanostructures. heoretical chemists and physicists may vary in their choices of speciic methods, but the general approach is to arrange the positive atomic cores, each consisting of the atomic nucleus and core electrons, into a given structure, and then to treat the negative valence electrons and cores as the primary particles. In this model, it is usually assumed that the core electrons are little disturbed from their normal conigurations in an isolated atom. he core– core interactions are oten represented by considering Coulomb interactions between point-like particles. he treatments of the electron–core and electron–electron interactions vary. Here we use the term electron to refer to a valence electron. he basis states for the electrons can be considered to be atomic-like assuming that the change in electronic states for free atoms is relatively small when the nanostructure is formed. Chemists oten take this approach. In contrast to the bottom-up approach, condensed matter physicists oten take an almost opposite view and treat the electrons within a nearly free electron model. his model views the electrons as itinerant, and a free electron basis set is used. Both methods have their domains in which they are used with ease. In general, when fully implemented and large computers are used, both approaches can be successful. Oten, tight binding,

1-1

1-2

which parameterizes local orbital models, and nearly free electron models serve as approximate methods to explain particular types of data. Hence, theoretical tools are available. he ones (Cohen 1982, 2006) that worked for bulk solids, surfaces, interfaces, clusters, and molecules can be extended to nanostructures.

1.3 Nanotubes, Fullerenes, and Graphene If we view a carbon or boron nitride nanotube as a rolled up sheet of graphene or its boron nitride (BN) graphene equivalent, then some properties of these tubes can be easily predicted. For example, for a carbon nanotube (CNT), depending on how the graphene is rolled into a tube, the resulting system can be a semiconductor or a metal (Saito 2008). he linear dispersion of energy versus wave vector E(k) found for graphene, commonly called “Dirac-like” because of its similarity to the relativistic dispersion found in the Dirac theory (Mele and Kane 2008), is altered. For an undoped boron nitride nanotube (BNNT), because of the ionic character of the BN bond, these systems are always semiconductors. he ionic potential opens a band gap at the Fermi level (Blasé et al. 1994). his system, when doped with electrons, is expected to exhibit interesting conduction with electron transport along the center of the tube. A common feature of CNTs and BNNTs is that they can be multiwalled (MW). his cylinder-within-a-cylinder geometry allows interesting applications. For example, it is possible to pull out an inner tube of a CNT and attach a stator to it. hus, a linear or a rotational bearing can be constructed where the inner cylinder either moves back and forth within the outer cylinder (or cylinders) or rotates (Fennimore et al. 2003). Because the bonding within the CNT is covalent, the tubes are rigid and strong; however, the bonding between the tubes within a MWCNT is van der Waals-like and very weak. Hence, these bearings have little friction, and when motors are constructed using these bearings, they are relatively friction-free. he friction mechanisms on the nanoscale are of theoretical interest (Tangney et al. 2004). It is possible to make many of these motors, which are each smaller than a virus. he fact that CNTs have diferent electronic properties depending on their chiral properties, i.e., how they were “rolled up,” paves the way for developing devices with interesting properties. For example, it was predicted using theoretical calculations that a junction between a semiconductor CNT and a metal CNT could be formed if the interface contained a ivefold ring of bonds next to a sevenfold ring replacing two sixfold rings. his interface, which involves only a small number of atoms, becomes a Schottky barrier (Chico et al. 1996) similar to what is found when a conventional semiconductor is put in contact with a conventional metal. he resulting device is predicted to act as a rectiier, and this property was veriied experimentally (Yao et al. 1999) along with the existence of this geometrical coniguration.

Handbook of Nanophysics: Principles and Methods

he Schottky barrier is only one example of a possible device. Heterojunctions formed from two semiconducting tubes are expected to have properties similar to the usual heterojunction devices made of macroscopic semiconductor materials. Hence, there is considerable excitement about the possibility of shrinking electronic devices even further using nanotubes. And since the thermal conductivities of nanotubes are very large, this may allow the relative packing densities of the electronic devices to be increased from present values. Even single nanotubes can be used as devices because of their sizes. As an example, a nanotube can be used as a sensor (Jhi et al. 2000) since its resistivity is sensitive to molecules or atoms that attach to the tubes. h is is because the impurities disturb the electronic wavefunctions, which may extend over large fractions of the tube. Another example of the unusual thermal and electronic interplay is the thermoelectric power of nanotubes (Hone et al. 1998). he quantum nature of the electronic processes in NTs oten leads to unexpected results. For example, we expect that two metals put in contact to allow current to low between them. However, for some metallic tubes, this does not happen. In such cases, conductivity depends on the chirality of the tubes. So, symmetry plays an important role in addition to coni nement and reduced dimensionality when dealing with the electronic properties of nanostructures. Hence coninement and lower dimensionality have important efects. A quantum dot can be viewed as a zero-dimensional object, a graphene sheet is two-dimensional, and an NT can have some one-dimensional properties. Oten, coninement leads to discrete energy levels as depicted by the classic “particle in a box” quantum mechanics problem. he size of the “box” and the dimensionality determine the detailed energy structure. For nuclei, the scale is of the order of MeVs; for alkali metal clusters with a similar potential shape, it is of the order of eVs (Knight et al. 1984); for carbon clusters, the energies are in the same range (Lonfat et al. 1999); for atoms, it varies from several eVs to keVs. So coninement, dimensionality, and symmetry all contribute to making the nanoscale interesting theoretically. The bonding geometries are also critical in determining electronic properties as one would expect. For example, it is well known that the dramatic difference between graphite and diamond can be traced to the fourfold versus threefold bonding coordination and the sp2 and sp3 nature of the bonds. The coordination and lengths of the bonds are important for determining macroscopic properties. The low compressibility of diamond is associated with its short bond (Cohen 1985). However, even though the sp2 bonds in graphite are shorter, they exist in the graphene planes. If one could pull a graphene sheet from opposite sides, it would be very strong. Hence, when a graphene sheet is rolled into a tube to produce a CNT, in a sense, this operation can be performed by pulling on the ends of the tube. he Young’s moduli for CNTs and BNNTs are among the largest available for any material (Chopra and Zettl 1998, Hayashida et al. 2002). h is property and the high aspect ratio for NTs make them useful for structural materials and for nanosized probes.

1-3

The Quantum Nature of Nanoscience

1.4 Some Properties and Applications Studies of fullerenes, CNTs, BNNTs, and graphene have revealed novel properties. As a result, many applications of these systems have been proposed. A few will be discussed in this section to illustrate how the considerations described above lead to unusual and potentially useful applications. he strength of the sp2 covalent bond and the resulting large Young’s moduli for NTs were discussed above. hese properties have been exploited in applications for developing strong ibers, composites, and nanoelectromechanical systems (NEMS) in analogy with the microelectromechanical systems (MEMS) that are in use in the industry. he related structural properties have led to suggestions for using nanostructures as templates in material synthesis. Another property of NTs is their high aspect ratio. As a result, NTs have been used to probe biological systems and as tips in scanning electron and atomic force microscopy (STM, AFM) instruments. Because they are hollow, they are applications in chemical storage, molecular transport, and i ltering. Another use of the hollow nature of NTs is their use to produce so-called peapods. Single-walled or MWNTs are used as conining cylinders for C60 molecules, which are absorbed internally. his “peapod” type geometry allows the formation of crystal structures composed of these molecules not found in nature. Both CNTs and BNNTs have been used in this fashion (Smith et al. 1998, Mickelson et al. 2003). he interaction between the BNNTs and the C60s is smaller than for the CNTs, resulting in less charge transfer. his makes it easier to model the resulting structure in terms of spheres in cylinders. For spheres with diameters slightly less than the tube diameters, a linear array of spheres is expected. As the tube diameter gets larger for a i xed sphere size, a zigzag pattern results; for larger diameters, helical patterns emerge; and in some case, a new hollow center appears. Mathematicians have studied these geometries, and for BNNT, peapod structures of this kind are found. Several applications in electronics were described in Section 1.3. When used as electrical conductors, NTs behave as quantum wires with novel electronic properties and sensing ability. Oten the NTs are functionalized so that they are particularly sensitive to certain adsorbates. Although there have been observations of superconducting behavior in NTs (Tang et al. 2001), the superconductors most studied in this area are the alkali metal–doped crystals of C60 (Hebard et al. 1991). For example, K3C60 is viewed as a metallic system in which the K outermost valence electron is donated to a sea of conduction electrons. he current consensus on the theory of the underlying mechanism for the superconducting behavior is rooted in the BCS theory of superconductivity. In these studies, electron pairing is caused by phonons as in the case of conventional superconductors. he speciic phonons that appear to be dominant in the pairing interaction are associated with intramolecular vibrations. his picture of relatively itinerant electrons paired by phonons associated with local molecular motions is consistent with the isotope efect (Burk et al. 1994), photoemission studies, and a host of other experimental measurements. he superconducting transition temperature for this class of materials

is fairly high with a maximum at this time of about 40 K. here are interesting suggestions for achieving higher transition temperatures. Many of these involve models designed to increase the density of electronic states at the Fermi level by increasing the lattice constant or by using metal atoms with d-electron states (Umemoto and Saito 2001). he C36 molecule appears to be promising for higher superconducting transition temperatures (Côté et al. 1998) because the higher curvature of this molecule compared to C60 suggests stronger electron–phonon couplings. Considerable research has been done on the optical properties of NTs. Because of the lower dimensionality of these systems, sharp structure can appear in the absorption or relectivity spectra. hese are usually associated with van Hove singularities in the joint density of states, which are oten greatly enhanced by excitonic efects (Spataru et al. 2004, Wang et al. 2007). Raman efect studies (Dresselhaus et al. 2008) have contributed to obtaining considerable information about both the electronic and vibrational properties of CNTs. Some of the unusual optical properties seen in carbon and BN nanotubes arise because they can be thought of as rolled up sheets. Hence, it is expected that similar efects, such as unusual excitonic behavior should be observed for the sheets themselves. Recent studies on nanoribbons predict unusual electronic structure (Son et al. 2006) and excitonic efects (Yang et al. 2007). In fact, these systems are predicted to display features not expected in nanotubes, such as electric ield–dependent spin efects (Son et al. 2007), anisotropic electron–phonon coupling (Park et al. 2008a), and supercollimation of electron transport (Park et al. 2008b). his area of research on graphene and graphene ribbons is expected to yield many new and unusual material properties.

Acknowledgments his work was supported by National Science Foundation Grant No. DMR07-05941 and by the Director, Oice of Science, Oice of Basic Energy Sciences, Materials Sciences and Engineering Division, U.S. Department of Energy under Contract No. DE- AC02-05CH11231.

References Blasé, X., Rubio, A., Louie, S. G., and Cohen, M. L. 1994. Stability and band gap constancy of boron nitride nanotubes. Europhys. Lett. 28: 335. Burk, B., Crespi, V. H., Zettl, A., and Cohen, M. L. 1994. Rubidium isotope efect in superconducting Rb3C60. Phys. Rev. Lett. 72: 3706. Chico, L., Crespi, V. H., Benedict, L. X., Louie, S. G., and Cohen, M. L. 1996. Pure carbon nanoscale devices: Nanotube heterojunctions. Phys. Rev. Lett. 76: 971. Chopra, N. G. and Zettl, A. 1998. Measurement of the elastic modulus of a multi-wall boron nitride nanotube. Solid State Commun. 105: 297. Chopra, N. G., Luyken, R. J., Cherrey, K. et al. 1995. Boron nitride nanotubes. Science 269: 966.

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Cohen, M. L. 1982. Pseudopotentials and total energy calculations. Phys. Scripta T1: 5. Cohen, M. L. 1985. Calculation of bulk moduli of diamond and zincblende solids. Phys. Rev. B 32: 7988. Cohen, M. L. 2005. Nanoscience: he quantum frontier. Physica E 29: 447. Cohen, M. L. 2006. Overview: A standard model of solids. In Conceptual Foundations of Materials: A Standard Model for Ground- and Excited-State Properties, S. G. Louie and M. L. Cohen (Eds.), p. 1. Amsterdam, the Netherlands: Elsevier. Côté, M., Grossman, J. C., Cohen, M. L., and Louie, S. G. 1998. Electron–phonon interactions in solid C36. Phys. Rev. Lett. 81: 697. Dresselhaus, M. S., Dresselhaus, G., Saito, R., and Jorio, A. 2008. Raman spectroscopy of carbon nanotubes. In Carbon Nanotubes: Quantum Cylinders of Graphene, S. Saito and A. Zettl (Eds.), pp. 83–108. Amsterdam, the Netherlands: Elsevier. Fennimore, A. M., Yuzvinsky, T. D., Han, W.-Q. et al. 2003. Rotational actuators based on carbon nanotubes. Nature 424: 408. Hayashida, T., Pan, L., and Nakayama, Y. 2002. Mechanical and electrical properties of carbon tubule nanocoils. Phys. B: Condens. Matter 323: 352. Hebard, A. F., Rosseinsky, M. J., Hadden, R. C. et al. 1991. Superconductivity at 18 K in potassium-doped C60. Nature 350: 600. Hone, J., Ellwood, I., Muno, M. et al. 1998. hermoelectric power of single-walled carbon nanotubes. Phys. Rev. Lett. 80: 1042. Iijima, S. 1991. Helical microtubules of graphitic carbon. Nature 354: 56. Jhi, S.-H., Louie, S. G., and Cohen, M. L. 2000. Electronic properties of oxidized carbon nanotubes. Phys. Rev. Lett. 85: 1710. Knight, W. D., Clemenger, K., de Heer, W. A., Saunders, W. A., Chou, M. Y., and Cohen, M. L. 1984. Electronic shell structure and abundances of sodium clusters. Phys. Rev. Lett. 5: 2141 [Erratum: Phys. Rev. Lett. 53: 510 (1984)]. Kroto, H., Heath, J. R., O’Brien, S. C., Curl, R. F., and Smalley, R. E. 1985. C60: Bulkminster fullerene. Nature 318: 162. Lonfat, M., Marsen, B., and Sattler, K. 1999. he energy gap of carbon clusters studied by scanning tunneling spectroscopy. Chem. Phys. Lett. 313: 539. Mele, E. J. and Kane, C. L. 2008. Low-energy electronic structure of graphene and its Dirac theory. In Carbon Nanotubes: Quantum Cylinders of Graphene, S. Saito and A. Zettl (Eds.), pp. 171–197. Amsterdam, the Netherlands: Elsevier.

Handbook of Nanophysics: Principles and Methods

Mickelson, W., Aloni, S., Han, W.-Q., Cumings, J., and Zettl, A. 2003. Packing C60 in boron nitride nanotubes. Science 300: 467. Park, C.-H., Giustino, F., McChesney, J. L. et al. 2008a. Van Hove singularity and apparent anisotropy in the electron-phonon interaction in graphene. Phys. Rev. B 77: 113410. Park, C.-H., Son, Y.-W., Yang, L., Cohen, M. L., and Louie, S. G. 2008b. Electron beam supercollimation in graphene superlattices. Nano Lett. 8: 2920. Rubio, A., Corkill, J. L., and Cohen, M. L. 1994. heory of graphite boron nitride nanotubes. Phys. Rev. B 49: 5081. Saito, S. 2008. Quantum theories for carbon nanotubes. In Carbon Nanotubes: Quantum Cylinders of Graphene, S. Saito and A. Zettl (Eds.), pp. 29–48. Amsterdam, the Netherlands: Elsevier. Saito, S. and Zettl, A. (Eds.) 2008. Carbon Nanotubes: Quantum Cylinders of Graphene. Amsterdam, the Netherlands: Elsevier. Smith, B. W., Monthioux, M., and Luzzi, D. E. 1998. Encapsulated C60 in carbon nanotubes. Nature 396: 323. Son, Y.-W., Cohen, M. L., and Louie, S. G. 2006. Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97: 216803 [Erratum: Phys. Rev. Lett. 98: 089901 (2007)]. Son, Y.-W., Cohen, M. L., and Louie, S. G. 2007. Electric ield efects on spin transport in defective metallic carbon nanotubes. Nano Lett. 7: 3518. Spataru, C. D., Ismail-Beigi, S., Benedict, L. X., and Louie, S. G. 2004. Excitonic efects and optical spectra of single-walled carbon nanotubes. Phys. Rev. Lett. 92: 077402. Tang, Z. K., Zhang, L., Wang, N. et al. 2001. Superconductivity in 4 Angstrom single-walled carbon nanotubes. Science 292: 2462. Tangney, P., Louie, S. G., and Cohen, M. L. 2004. Dynamic sliding friction between concentric carbon nanotubes. Phys. Rev. Lett. 93: 065503. Umemoto, K. and Saito, S. 2001. Electronic structure of Ba4C60 and Cs4C60. AIP Conf. Proc. 590: 305. Wang, F., Cho, D. J., Kessler, B. et al. 2007. Observation of excitons in one-dimensional metallic single-walled carbon nanotubes. Phys. Rev. Lett. 99: 227401. Yang, L., Cohen, M. L., and Louie, S. G. 2007. Excitonic efects in the optical spectra of graphene nanoribbons. Nano Lett. 7: 3112. Yao, Z., Postma, H., Balents, L., and Dekker, C. 1999. Carbon nanotube intramolecular junctions. Nature 402: 273.

2 Theories for Nanomaterials to Realize a Sustainable Future Rodion V. Belosludov Tohoku University

Natarajan S. Venkataramanan Tohoku University

Hiroshi Mizuseki Tohoku University

Oleg S. Subbotin Tohoku University and Nikolaev Institute of Inorganic Chemistry

Ryoji Sahara Tohoku University

2.1 2.2

Introduction • hermodynamics Model of Clathrate Structures with Multiple Degree of Occupation • Conclusions

2.3

Tohoku University

Nikolaev Institute of Inorganic Chemistry

Yoshiyuki Kawazoe Tohoku University

Gas Hydrates as Potential Nano-Storage Media .................................................................2-4 Introduction • Argon Clathrate Hydrates with Multiple Degree of Occupation • Hydrogen Clathrate Hydrate • Guest–Guest and Guest–Host Interactions in Hydrogen Clathrate • Mixed Methane–Hydrogen Clathrate Hydrate

Vladimir R. Belosludov and

Introduction ............................................................................................................................. 2-1 Molecular Level Description of hermodynamics of Clathrate Systems .......................2-2

2.4

Metal–Organic Framework Materials ................................................................................ 2-16 Introduction • Metal Organic Frameworks as Hydrogen Storage Materials • Organic Materials as Hydrogen Storage Media

2.5 Conclusions............................................................................................................................. 2-21 Acknowledgments ............................................................................................................................. 2-21 References........................................................................................................................................... 2-21

2.1 Introduction he present environmental factors and limited energy resources have led to a profound evolution in the way we view the generation, storage, and supply of energy. Although fossil fuel and nuclear energy will remain the most important sources of energy for many more years, lexible technological solutions that involve alternative means of energy supply and storage are in urgent need of development. he search for cleaner, cheaper, smaller, and more eicient energy technologies has been driven by recent developments in materials science and engineering (Lubitz and Tumas 2007). To meet the storage challenge, basic research is needed to identify new materials and to address a host of associated performanceand system-related issues. hese issues include operating pressure and temperature; the durability of the storage material; the requirements for hydrogen purity imposed by the fuel cell; the

reversibility of hydrogen uptake and release; the refueling conditions of rate and time; the hydrogen delivery pressure; and overall safety, toxicity, and system eiciency and cost. No material available today comes close to meeting all the requirements for the onboard storage of hydrogen for supplying hydrogen as a fuel for a fuel cell/ electric vehicle (Schlapbach and Züttel 2004). here are several candidate groups for storage materials, each with positive and negative attributes. he traditional hydrides have excellent H-volume storage capacity, good and tunable kinetics and reversibility, but poor H-storage by weight. Highly porous carbon and hybrid materials have the capability of high mass storage capacity, but since molecular hydrogen is required to be stored, they can only work at cryogenic conditions. he light metal alloys have the required mass density but poor kinetics and high absorption temperatures/pressures. he complex hydrides undergo chemical reactions during desorption/adsorption, thus limiting kinetics and reversibility of 2-1

2-2

storage. Hence, research on adequate H-storage materials remains a challenge, in particular for the vehicle transportation sector. he host–guest or inclusion compound in which the lattice framework with porous (host) can accommodate the guest atoms or molecules is probably one of the most suitable hydrogen storage media. his type of material belongs to the ield of supramolecular chemistry, which can be deined as a chemistry beyond the molecule, referring to the organized entities of higher complexity that result from the association of two or more chemical species held together by intermolecular forces (Lehn 1995). At the present time, the role of the supramolecular organization in the design and synthesis of new materials is well recognized and assumes an increasingly important position in the design of modern materials. he combination of nanomaterials as solid supports and supramolecular concepts has led to the development of hybrid materials with improved functionalities. his “heterosupramolecular” combination provides a means of bridging the gap between molecular chemistry, material science, and nanotechnology. A number of terms are used in the literature to describe these supermolecules: host–guest compound, inclusion compound, clathrate, molecular complex, intercalate, carcerand, cavitand, crow, cryptand, podand, spherand, and so on. Many detailed schemes have been proposed for the classiication of these substances according to the nomenclature given above. hus, the term “clathrate,” which is derived from the Latin word clathratus meaning “enclosed by bars of a grating,” was used to describe a three-dimensional host lattice with cavities for accommodating guest species. he term Einschlussverbindung (inclusion compounds), introduced by Schlek in 1950, seems to be the most suitable for all inclusion-type systems considering some characteristic features of the host–guest association, such as no-covalent bond between the host and guest and/or the dissociation–association equilibrium in solution (Cramer 1954). he history of inclusion compounds dates back to 1823 when Michael Faraday reported the preparation of clathrate hydrate of chlorine. However, for a long period of time, inclusion compounds were the results of discovery by chance without any importance for practical uses (Mandelcorn 1964, Davies et al. 1983). Only since the third postwar period of chemistry, known as the supramolecular era, which has bloomed since the 1970s (Vögtle 1991), have the inclusion compounds and similar co-crystalline constructions grown rapidly in importance (Atwood et al. 1984). In the mid-1990s, they became the focus for applications such as those involving separation, encapsulation, and many other applications in high-technology ields (Weber 1995). he metal−organic framework (MOF) material is one of the inclusion compounds that may be identiied as a single supramolecule host framework in which guest molecules reside completely within the host. he recent advent of MOFs as new functional adsorbents has attracted the attention of chemists due to scientiic interest in the creation of unprecedented regular nanosized spaces and in the inding of novel phenomena, as well as commercial interest in their application for storage, for separation, and in heterogeneous catalysis (Kitagawa et al. 2004). In the area of MOFs, the structural versatility of molecular chemistry has allowed the

Handbook of Nanophysics: Principles and Methods

rational design and assembly of materials having novel topologies and exceptional host–guest properties, which are important for immediate industrial applications including storage of hydrogen (Rowsell and Yaghi 2005). Nowadays several hundred diferent types of MOFs are known and experimentally synthesized. Despite of the importance of these materials, the number of publications related to computational modeling studies is still limited in many cases due to complexity of their crystal structures. In particular, the number of atoms involved makes simulations prohibitively timeconsuming. herefore, the accurate systematic simulation of their properties including host–guest interaction, guest dynamics in MOFs, thermodynamic stability of empty host, and their structural transformations will be indispensable in providing future directions for material optimization. Using powerful computers and highly accurate methods, scientists can accelerate the realization of novel MOFs and propose these materials for diferent applications. he clathrate hydrate is another type of material that has a potential application as a hydrogen storage material. his is a special class of inclusion compounds consisting of water and small guest molecules, which form a variety of hydrogen-bonded structures. hese compounds are formed when water molecules arrange themselves in a cage-like structure around guest molecules. Recently, the interest in hydrogen clathrate hydrates as potential hydrogen storage materials has risen ater a report that the clathrate hydrate of structure II (CS-II) can store around 4.96 wt% of hydrogen at 220 MPa and 234 K (Mao et al. 2002). However, the extreme pressure required to stabilize this material makes its application in hydrogen storage impractical. It is well known that there are several types of gas hydrate structures with diferent cage shapes, and some of these hydrate structures can hypothetically store more hydrogen than the hydrate of structure CS-II. herefore, for practical application of gas clathrates as hydrogen storage materials, it is important to know the region of stability of these compounds as well as the hydrogen concentration at various pressures and temperatures. Our group developed a model that accurately predicts the phase diagram of the clathrate hydrates at the molecular level. his model signiicantly improves the well-known van der Waals and Platteeuw theory and will be discussed in Section 2.2. In this chapter, we study the physical and chemical properties of hydrogen clathrate and selected MOF structures and show how the theoretical and computational techniques can provide important information for experimentalists in order to help them develop hydrogen storage materials based on MOF materials and clathrate hydrates with desired storage characteristics.

2.2 Molecular Level Description of Thermodynamics of Clathrate Systems 2.2.1 Introduction At the present time, analytical theories of clathrate compounds, which allow the construction of the T–P diagram of gas hydrates, are based on the pioneering work of van der Waals and Platteeuw (van der Waals and Platteeuw 1959). his theory and all of its

2-3

Theories for Nanomaterials to Realize a Sustainable Future

subsequent variations are based on four main assumptions. he irst three are (a) cages contain at most one guest; (b) guest molecules do not interact with each other; and (c) the host lattice is unafected by the nature as well as by the number of encaged guest molecules. hese are clearly violated in the case of hydrogen clathrates, which have multiple occupancy. However, it has been shown how a nonideal solution theory can be formulated to account for guest–guest interaction (Dyadin and Belosludov 1996). A generalization of the van der Waals–Platteeuw (vdW–P) statistical thermodynamic model of clathrate hydrates, applicable for arbitrary multiple illing the cages, was formulated by Tanaka et al. (2004). However, these developments do not go far enough, and a much more comprehensive theory is desperately needed. In this section, we discuss a theoretical model based on the solid solution theory of van der Waals and Platteeuw. Our modiications include multiple occupancies, host relaxation, and the accurate description of the behavior of guest molecule in the cavities. We used quasiharmonic lattice dynamics (QLD) method to estimate the free energies, equations of state, and chemical potentials (Belosludov et al. 2007). his is important in order to know the region of stability of the inclusion compounds as well as the guest concentration at various pressures and temperatures for practical application of these materials as storage medium. he method has been used for gas hydrate clathrates. However, our approach is general and can be applied equally well to other inclusion compounds with the same type of composition (clathrate silicon, zeolites, MOF materials, inclusion compounds of semiconductor elements, etc.). Using this approach, one can not only characterize and predict the hydrogen storage ability of known hydrogen storage materials with weak guest–host interactions but also estimate these properties for structures that have not yet been realized by experiment.

∑

⎡⎛ N t ⎢⎜ 1 − ⎢⎝ ⎣

n

k

t =1

⎛ × ln ⎜ 1 − ⎝

n

k

∑∑ l =1

i =1

⎞ ylti ⎟ + ⎠

∑∑ l =1

i =1

ylti ln

n

k

l =1

ylti ⎤ ⎥ i! ⎥ ⎦

where U is the potential energy Fvib is the vibrational contribution Fvib =

1 2

∑ℏω (q) + k T ∑ ln(1 − exp(−ℏω (q)k T )) 



Β

j

 jq

 jq

j

Β

(2.3)

where → ωj(q ) is the jth frequency of crystal vibration → q is the wave vector he eigenfrequencies ωj(q ) of molecular crystal vibrations are determined by solving numerically the following system of equations: →

  mk ω 2 (q )U αt (k , q ) =

∑ ⎣⎢⎡D k ′ ,β

tt αβ

   tr  ⎤ r (q , kk ′)U βt (k ′, q ) + D αβ (q , kk ′ )U β (k ′ , q ) ⎦⎥

(2.4)

=

⎞

∑∑ y ⎟⎠ i lt

(2.2)

αβ

  (k)ω 2 (q )U βr (k, q )

β

he following development of the model is based only on one of the assumptions of vdW–P theory: the contribution of guest molecules to the free energy is independent of mode of occupation of the cavities at a designated number of guest molecules (van der Waals and Platteeuw 1959). h is assumption allows us to separate the entropy part of free energy: m

F1(V ,T , y111 ,…, y knm ) = U + Fvib

∑I

2.2.2 Thermodynamics Model of Clathrate Structures with Multiple Degree of Occupation

1 k ,…, ynm ) + kT F = F1(V ,T, y11

of l-type guest molecules; Nt is the number of t-type cavities; N lti is the number of l-type guest molecules that are located in t-type cavities (Belosludov et al. 2007). 1 k For a given arrangement { y11 ,…, ynm } of the clusters of guest molecules in the cavities, the free energy F1(V, T, y111,…, y knm) of the crystal can be calculated within the f ramework of a lattice dynamics approach in the quasiharmonic approximation (Leifried and Ludwig 1961, Belosludov et al. 1994) as

i =1

(2.1)

where F1 is the part of the free energy of clathrate hydrate for the cases where several types of cavities and guest molecules exist, and a cavity can hold more than one guest molecule. he second term is the entropy part of free energy of a guest system, ylti = N lti /N t is the degree of i lling of t-type cavities by i cluster

∑ ⎡⎢⎣D k ′ ,β

rt αβ

   rr  ⎤ r (q , kk ′)U βt (k ′, q ) + D αβ (q , kk ′)U β (k ′, q ) ⎥⎦

(2.5)

 iiαβ′ (q, kk ′ ) (α, β = x, y, z) are translational (i, i′ = t), rotawhere D tional (i, i′ = r), and mixed (i = t, i′ = r or i = r, i′ = t) elements of the dynamical matrix in the case of molecular crystals, the expressions for which are presented in the literature (Belosludov  et al. 1988, 1994), U αi ′(k, q ) (α, β = x, y, z) is the amplitude of vibration, mk and Iαβ(k) are the mass and inertia tensor of kth molecule in the unit cell. In the quasiharmonic approximation, the free energy of crystal has the same form as in the harmonic approximation but the structural parameters at i xed volume depend on temperature. his dependence is determined self-consistently by the calculation of the system’s free energy. Equation of state can be found by numerical diferentiation of free energy: k 1 ⎛ ∂F (V ,T , y11 ,…, ynm )⎞ P(V ,T ) = − ⎜ ⎟⎠ V ∂ ⎝ 0

(2.6)

2-4

Handbook of Nanophysics: Principles and Methods

he “zero” index mean constancy of all thermodynamic parameters except the ones which diferentiation execute. Ater obtaining the free energy values, we can calculate the chemical potentials, μilt, of i-cluster of l-type guest molecules, which are located on t-type cavities: k 1 ⎛ ∂F (V (P ),T , y11 ,…, ynm )⎞ k 1 ,…, ynm )=⎜ μ ilt (P , T , y11 i ⎟⎠ ∂N lt ⎝ 0

=∼ μ ilt + kT ln

ylti ⎛ i !⎜1 − ⎝

∑

n, k l 'i′

⎞ y li′′t ⎟ ⎠

(2.8)

he last derivative can be found by numerical calculation using the following approximation: 1 k k ,..N lti ,...N nm ) − F1(V (P ), T , N111 ,..N lti − N lti nlti ,...N nm ) F (V (P ), T , N11 ∼ μ ilt ≅ 1 i i N lt nlt

(2.9)

where N lti nlti is number of clusters of guest molecules removed from clathrate hydrate. If the Helmholtz free energy F and equation of state of the 1 k system are known, then the Gibbs energy Φ(P ,T , y11 ,…, ynm ) expressed in terms of chemical potentials of host and guests is found from the following thermodynamic relation: m

n

k

∑ ∑∑ y μ i lt

Nt

t =1

l =1

i lt

i −1

= F (V (P ),T , y ,…, y ) + PV (P ) 1 11

k nm

(2.10)

Substituting the expression (2.1) for F into (2.10) allows one to obtain the chemical potential of host molecules μQ: k 1 μQ (P ,T , y11 μQ + kT ,…, ynm )= ∼

m

∑ t =1

⎡ ⎛ νt ⎢ ln ⎜ 1 − ⎢ ⎝ ⎣

∼ ≡ PV (P ) + 1 F (V (P ),T , y1 ,…, y k ) − μ Q nm 1 11 NQ NQ

n

k

l =1

i =1

∑∑ m

⎞⎤ ylti ⎟ ⎥ (2.11) ⎠ ⎥⎦

n

k

∑ ν ∑∑ y ∼μ i lt

t

t =1

l =1

k 1 ,…, ynm ) = iμlgas (P ,T ) − U lt μilt (P ,T , y11

(2.13)

1 k μQ (P ,T , y11 ,…, ynm ) = μQice (P ,T )

(2.14)

(2.7)

k 1 ⎛ ∂F (V (P ),T , y11 ,…, ynm )⎞ ∼ μilt = ⎜ 1 i ∂N lt ⎝ ⎠⎟ 0

k 1 Φ(P ,T , y11 ,…, ynm ) = N Q μQ +

potentials of molecules in cluster: μ ilt ≅ iμ lt − U lt (U lt is the interaction of guest molecules inside cluster in cavities). he curve P(T) of monovariant equilibrium can be found from the equality of the chemical potentials. In the case of gas hydrates, it can be written as

i −1

i lt

where μlgas is the chemical potential of guest molecules in the gas phase μQice (P ,T ) is the chemical potentials of water molecules in ice he following divariant equilibria lines “gas phase–hydrate” are deined by Equation 2.13. Here we assume that the ideal gas laws govern the gas phase, and then the expressions for chemical potentials of mixture components will be as follows: ⎡ P ⎛ 2πℏ 2 ⎞ 3/2 ⎤ ⎥ (2.15) μ lgas (P ,T ) = kT ln[xl P / kT Φ l ] = kT ln ⎢ xl ⎢ kT ⎜⎝ ml kT ⎟⎠ ⎥ ⎣ ⎦ where xl is the mole fraction of the l-type guest in the gas phase.

2.2.3 Conclusions We have presented a general formalism for calculating the thermodynamical properties of inclusion compounds. Deviating from the well-known theory of van der Waals and Platteeuw, our model accounted the inluence of guest molecules on the host lattice and guest–guest interaction. he validity of the proposed approach was checked for argon, methane, and xenon hydrates, and the results were in agreement with known experimental data (Belosludov et al. 2007). As mentioned before, the method is quite general and can be applied to the various nonstoichiometric inclusion compounds with weak guest–host interactions. However, it is signiicant that the present model of inclusion compounds allows the calculation thermodynamic functions starting from welldeined potentials of intermolecular guest–host and guest–guest interactions. hus, it is important to estimate these interactions using the highly accurate irst-principles methods. he applications of this model in the case of gas hydrates, including hydrogen clathrate, are presented in Section 2.3.

(2.12)

νt = Nt/NQ, NQ is the number of host molecules. For the case of multiple i lling of cages, we derived expressions (2.7) for chemical potentials of clusters μ ilt of guest molecules in cages. For description of phase equilibrium, we need to derive expressions for chemical potentials μlt of single guest molecules in these clusters. As a irst approximation, the chemical potentials of single guest molecules inside cluster are equal and chemical potential of a cluster is equal to the sum of chemical

2.3 Gas Hydrates as Potential Nano-Storage Media 2.3.1 Introduction Clathrate hydrates are one type of crystalline inclusion compounds in which the host framework of water molecules was linked by hydrogen bonds and formed a cage-like structure around the guest atoms or molecules. As a result, many of their

2-5

Theories for Nanomaterials to Realize a Sustainable Future

(a)

(c)

(b)

(d)

FIGURE 2.1 Crystal structure of clathrate hydrate: (a) cubic structure I (CS-I), (b) cubic structure II (CS-II), (c) hexagonal structure (sH), and (d) tetragonal structure.

physical and chemical properties are diferent from ice (Sloan and Koh 2007). At the present time, most of the recognized gas hydrates have one of well-known three types of structures (see Figure 2.1a–c). he cubic structures I (CS-I) and II (CS-II) of gas hydrates were irst identiied by Von Stackelberg and Miller (1954), Claussen (1951) and Pauling and Marsh (1952). he third one, the hexagonal structure (sH) was determined (Ripmeester et al. 1987, Udachin et al. 1997). According to general rule, CS-I hydrates are formed by molecules with van der Waals diameters of up to about 5.8 Å while CS-II hydrates are formed by large molecules up to about 7.0 Å in size. he exceptions of this rule are molecules with small van der Waals diameters up to about 4.3 Å, which form CS-II hydrates (Davidson et al. 1984, 1986). It was proved that the gas hydrates are sensitive to pressure variation due to relatively weak binding energy between water molecules and hence the friable packing of host framework. he sequential change of hydrate phase in diferent gas–water systems was observed by increasing pressure up to 15 kbar (Dyadin et al. 1997a,b). Recently, it was established that these compounds are a potential source of energy in the future since natural gas hydrates occur in large amounts under conditions of high pressure and low temperature in the permafrost regions or below the ocean loor. As example, methane in gas hydrates represents one of the largest sources of hydrocarbons on earth. Moreover, the possible releases of methane

from clathrate hydrates have raised serious questions about its possible role in climate change. Among many potential applications of clathrate hydrates, these compounds can also be used as gas (such as CO, CO2, O2, or H2) storage materials. herefore, a good understanding of the chemical and physical properties of clathrate hydrates with a multiple occupation, such as electronic properties, structure, dynamics, and stability, is essential for practical manipulation of this class of inclusion compounds.

2.3.2 Argon Clathrate Hydrates with Multiple Degree of Occupation We discuss the physical and chemical properties of argon hydrates of diferent structures and their stability depending on cage occupations. he phase diagram of argon hydrate at diferent pressures has been studied by several experimental groups (Dyadin et al. 1997b, Lotz and Schouten 1999). he possibility of double occupation of the large cages in CS-II by argon was also examined by molecular dynamics calculations (Itoh et al. 2001). hus, it was predicted that the double-occupied argon hydrate can be stabilized by high external pressure. Moreover, the phase diagram of argon–water system was studied at high pressure and the formation of several hydrate structures was established (Manakov et al. 2001). Powder neutron dif raction study showed

2-6

Handbook of Nanophysics: Principles and Methods

(a)

(b)

(c)

FIGURE 2.2 Large cages: (a) hexakaidecahedron (5126 4), (b) icosahedron (51268), and (c) tetradecahedral (425864) with two, ive, and two argon atoms, respectively.

that in argon–water system, CS-II hydrate exists from ambient pressure up to 4.5 kbar. Upon increasing the pressure, a phase transition occurs and the argon hydrate with hexagonal structure is formed up to 7.6 kbar. In the pressure range of 7.6–10 kbar, an argon hydrate of previously unknown type was obtained. A hydrate with tetragonal crystal structure (see Figure 2.1d) and one type of cavity (Manakov et al. 2001, 2002) was proposed. he electronic, structural, dynamic, and thermodynamic properties of structure II, H, and tetragonal Ar clathrate hydrates with multiple illing of large cages were investigated and their stability was examined using irst-principles and lattice dynamics calculations (Inerbaev et al. 2004). he geometry optimization and vibrational analyses of selected cage-like structures of water clusters with and without enclathrated argon molecules were performed at the Hartree–Fock (HF) level using the Gaussian 98 package (Frisch et al. 1998). he 6-31 + G(d) basis set was used. he inclusion of dif usion functions in the basis set is necessary for a good description of the structure and the energetics of these hydrogen-bonded complexes (Frisch et al. 1986). he redundant internal coordinate procedure was used during optimizations (Peng et al. 1996) and the vibrational frequencies were calculated from the second derivative of the total energy with respect to atomic displacement about the equilibrium geometry. hese structures are indeed (at least local) minima if all frequencies are real. he diference between the total cluster energy and the energies of separated empty water cages and guest atoms at an ininite distance was considered as the stabilization energy (SE). he multiple occupations for argon hydrate was proposed only for the large cages, the hexakaidecahedron (5126 4), icosahedron (51268), and tetradecahedral (42586 4), as shown in Figure 2.2. hese cavities with and without encapsulation of argon atoms were optimized using irst-principles calculations. he energy values for all the structures investigated are listed in Table 2.1. For calculating the H-bond energy (HBE), we assumed that the binding energy of the water cluster is solely due to H-bonding. he value of HBE was determined as the binding energy, which is the diference between the total cluster energy without guest atoms and the separate water monomers at ini nite distance, divided by the number of H-bonds. he interaction between one Ar and the hexakaidecahedron cage (H2O)28 is equal to −0.41 kcal/mol. In the case of the icosahedron cage

TABLE 2.1 Stabilization Energy (SE) and H-Bond Energy (HBE) for the Large Cages from Diferent Hydrate Structures Depend on the Number of Encapsulated Argon Atoms Type of Water Cage Hexakaidecahedron

Tetradecahedral

Icosahedron

Number of Ar Atoms 0 1 2 3 0 1 2 3 0 1 2 3 4 5 6

SE (kcal/mol) −0.41 2.14 9.25 0.99 2.50 26.81 −0.29 −0.54 −0.04 3.54 5.68 11.85

HBE (kcal/mol) −6.06 −6.06 −6.06 −5.99 −6.17 −6.17 −6.16 −5.87 −5.97 −5.96 −5.96 −5.95 −5.94 −5.94 −5.90

(H2O)36, the interaction between one argon atom and the cage is equal to −0.29 kcal/mol. he negative value of SE means that argon has a positive stabilization efect on these cages and hence single occupations can be achieved without the applications of high external pressure. he analysis of calculated frequencies has shown that the translation of argon atom in these two cages is characterized by imaginary frequency. It was found that in these cases, the HBE values are for the respective empty cages. Moreover, the structural features of water cavities (distances, angles, etc.) are very similar to those existing in the empty cages, and hence, represent the cage structures with no distortion. In the case of double occupancy, the negative value of SE is obtained only in the case of 51268 cage. he positive values of SE are found for hexakaidecahedron and tetradecahedral cavities. However, these energies are very small and hence the double occupancy may be possible in the case of CS-II and tetragonal structures ater applying external pressure. Moreover, the HBE as well as shape of cages are not changed in the presence of two argon atoms. Addition of one more argon atoms leads to signiicant increase in the SE and a decrease in the HBE values for

2-7

Theories for Nanomaterials to Realize a Sustainable Future

hexakaidecahedron and tetradecahedral cages because of the distortion of the water cages. Moreover, imaginary frequencies are found. he analysis of these frequencies shows that the argon clusters interact strongly with the water cages since there is a strong coupling between the vibrations of guest and host molecules. In the case of sH hydrate, the Arn (n up to 5) clusters can be stabilized in an icosahedron cavity. he frequency calculations show that all frequencies are real and hence these structures are in local minima. he SE value is increased up to 5.68 kcal/mol and HBE is not signiicantly changed (see Table 2.1). he stabilization of the Ar6 cluster inside this cage is energetically unfavorable since the value of SE is twice as larger as for the Ar5 cluster. he present calculation results are consistent with the experimental data (Manakov et al. 2002). hus, the double occupancy of the large cage of CS-II hydrates can be achieved using external pressure. Following an increase in pressure, the stoichiometry changes from Ar . 4.25H2O (double and single occupancy of large and small cages in CS-II hydrate, respectively) to Ar . 3.4H2O (triple and single occupancy of large and small cages in CS-II hydrate). he same stoichiometry (Ar . 3.4H2O) can be achieved in sH hydrate with ivefold and single occupancy of large and both medium and small cages, respectively. The fivefold occupation of icosahedron is more energetically favorable than triple occupation in the case of hexakaidecahedron cavity (see Table 2.1). his phase transition of the hydrate with formation of sH hydrates having ivefold occupancy of icosahedron

cages was observed in the experiment. When further pressure is applied, increasing the formation of high-dense tetragonal phase with stoichiometry Ar . 3H2O (double occupancy) is preferred (Inerbaev et al. 2004). he dynamic properties and thermodynamic functions P(V) of three types of hydrate structures was estimated using the lattice dynamics (LD) method. he calculations of phonon density of states (DOS) of the CS-II hydrate were performed for various i llings: empty host lattice, single occupancy of the large and small cages, and double occupancy of the large cages and single occupancy of the small cages. he results are shown in Figure 2.3a. he feature of this plot is a gap of about 240 cm−1 which divides the low- and high-frequency vibrations of lattice. For empty host lattice, the analysis of the eigenvectors derived from the LD method revealed that the low-frequency region (0–300 cm−1) consists of translation modes of water and the high-frequency region (520–1000 cm−1) consists of libration modes of water host framework. Argon atoms inluence the vibrations of the host water framework only slightly and guest vibrations are located in the vicinity of the peaks of phonon DOS at 0–40 cm−1, which is close to value obtained by ab initio calculations. he peak in the negative region, in the case of the single occupancy of both types of cages, corresponds to the motions of argon in large cages with imaginary frequencies, which is in agreement with the values obtained using HF methods. h is means that the argon atoms are not localized in potential minima and can be freely moved inside the large

0.004

0.002

0.000

(a)

DOS (arb. units)

DOS (arb. units)

0.15 0.10 0.05 0.00

0

200

400

600

Frequency

(cm–1)

800

1000

0

200

(b)

400

Frequency

600

800

1000

(cm–1)

DOS (arb. units)

0.15 0.10 0.05 0.00 (c)

0

200

400

Frequency

600

800

1000

(cm–1)

FIGURE 2.3 Phonon DOS of Ar hydrates: (a) CS-II structure, empty host lattice (solid line), double occupancy of the large cages (dashed line) and single occupancy of the large cages (dotted line); (b) sH structure, empty host lattice (dotted line), ivefold occupancy of the large cages (solid line); and (c) tetragonal structure empty host lattice (dotted line) and doubly occupancy (solid line). In the case of CS-II and sH, only single occupancy for other cages is considered. (Reproduced from Inerbaev, T.M. et al., J. Incl. Phen. Macrocycl. Chem., 48, 55, 2004. With permission.)

2-8

Handbook of Nanophysics: Principles and Methods

cages. However, the all frequencies of water framework are positive in all the cases and hence both the single and the double occupancies do not disrupt the dynamical stability of the host lattice (Inerbaev et al. 2004). In the case of sH hydrate, the dynamical properties of empty host lattice and argon hydrate of sH with maximum experimentally predicted (Manakov et al. 2002) number of guest atoms (ivefold occupancy of the large cages) was estimated. he DOS calculations were done using the experimental values of cell parameters at T = 293 K. he results are shown in Figure 2.3b. he large intensive peak at 20 cm−1 corresponds to translation of the guest atoms as in the case of CS-II hydrate. Ater inclusion of argon atoms, the vibrational spectrum of host lattice has practically same features as in the case of the empty hydrate structure and hence the dynamical stability of H hydrate is not signiicantly changed even with a ivefold occupancy of the large cages. he unit cell for the argon hydrate with the tetragonal structure contains 12 water molecules, forming one cavity (425864) (Manakov et al. 2002). he DOS calculations were performed both for empty host lattice and double occupancy of the cages using the experimental values of cell parameters at T = 293 K. he results are shown in Figure 2.3c. he empty host lattice is dynamically stable because all frequencies of water framework are positive. Dynamical stability of water lattice is preserved

even ater the inclusion of two guest atoms in each cage. he density of vibrational states of the empty tetragonal hydrate has same features as the density of vibrational states of ice Ih (Tse 1994), hydrates of CS-I (Belosludov et al. 1990), CS-II, and sH. he frequency region of molecular vibrations is divided into two zones. In the lower zone (0–315 cm−1), water molecules mainly undergo translational vibrations, whereas in the upper one (540–980 cm−1), the vibrations are mostly librational. In comparison with hydrates of CS-I, the frequency spectrum of tetragonal argon hydrate is shited toward higher frequencies, which may be explained by greater density of a new tetragonal crystal argon hydrate compared to hydrates of CS-I. Vibrational frequencies of argon atoms in the cavities lie in the region 20–45 and 60–110 cm−1. he guest atoms inluence the phonon spectrum of host framework, diminishing the DOS in the upper zone of translational vibrations and the DOS of librational vibrations (Inerbaev et al. 2004). he equation of state P(V) was calculated at 293 K. It was found that the studied hydrates are thermodynamically stable in selected range of pressure. hese results were compared with experimental P(V) data for argon hydrate of three structural types (Manakov et al. 2002). In the case of argon hydrate of CS-II type, the calculated P(V) for single occupancy of the large and small cages is most closely correlated with experimental points as shown in Figure 2.4a. he largest diference between theory

14 Pressure (kbar)

Pressure (kbar)

15

10

5

Volume (Å3)

10 8 6 4

0 4500 4600 4700 4800 4900 5000 5100 (a)

12

1200

1225

1250

1275

Volume (Å3)

(b)

12

Pressure (kbar)

10 8 6 4 420 (c)

425

430 Volume (Å3)

435

440

FIGURE 2.4 Equation of state of Ar hydrates at T = 293 K: (a) CS-II structure with single occupancy (solid line); (b) sH structure, ivefold (dotted and dashed line), threefold (dashed line), double (dotted line), and single (solid line) occupancy of the large cages (in all the cases, the occupancy of the small and medium cages are single); and (c) tetragonal structure single (dash line) and double (solid line) occupancy. (Reproduced from Inerbaev, T.M. et al., J. Incl. Phen. Macrocycl. Chem., 48, 55, 2004. With permission.)

Theories for Nanomaterials to Realize a Sustainable Future

and experiment was obtained for H-hydrate using the experimentally proposed multiple (5 Ar atoms) occupation of large cages (Manakov et al. 2002) (see Figure 2.4b). In this case, the P(V) function of sH Ar hydrate with Ar . 4.87H2O stoichiometry, for which the occupancy of the large cages is double, is closer to experiment. A good agreement with experimental data was observed in the case of double occupancy of Ar atoms in the hydrate cages of tetragonal structure. Figure 2.4c shows that at the experimentally determined lattice parameters (a = 6.342 Å, c = 10.610 Å), the calculated value of pressure is P = 9.8 kbar, which correlates well with the experimental value (P = 9.2 kbar) (Manakov et al. 2002). he disagreement between the LD results and experimental data on P(V) diagram of CS-II and sH argon hydrates can be explained by fact that in the LD calculations, all the cages were i lled. However, in practice, it is diicult to realize the full occupation of hydrate cavities. Moreover, it is experimentally known that it is not possible to occupy all cavities by guest molecules and even a small number of guest molecules are suicient to form the clathrate structure (Sloan and Koh 2007). herefore, the multiple occupation for sH, which was predicted experimentally, may be realized by only in a limited number of large cavities. It can be summarized that in the studied hydrates, multiple occupancies of the large cages are possible. Moreover, the stability of Ar clusters in the large cages is correlated well with experimental phase transition from CS-II to a new tetragonal hydrate structure (Inerbaev et al. 2004).

2.3.3 Hydrogen Clathrate Hydrate he anomalous behavior of H 2O–H2 system was found and the formation of clathrate phase of hydrogen hydrate was proposed at hydrogen pressures of 100–360 MPa and temperature range 263–283 K (Dyadin et al. 1999a,b). he structure of the hydrogen hydrate formed at this range of pressure P = 200–300 MPa and lower temperature range T = 240–249 K was determined in 2002 (Mao et al. 2002). It was shown that hydrogen hydrates may be used as compounds for hydrogen storage because hydrogen content was 50 g/L, which corresponds to 4.96 wt% (Mao and Mao 2004). hey also showed that ater high pressure formation it is possible to maintain the hydrogen hydrate at ambient pressures and liquid nitrogen temperatures T = 77 K and decomposed them with hydrogen emission at heating to 140 K. he large cages of clathrate hydrate structure of CS-II hold an individual large guest molecule; however, these cavities are too large for a single H2 molecule and therefore the existence of hydrogen hydrate with single occupancy of large cavities was not suspected. Experimentally, it was shown that large (51264) cavity of CS-II hydrate can include three to four hydrogen molecules and small (512) cavities one to two hydrogen molecules. he maximum quantity of hydrogen in a clathrate hydrate was reached at high pressures in hydrogen hydrates CS-II at fourfold i lling of large cages and twofold illing of small cages by hydrogen molecules.

2-9

Along with experimental studies, theoretical investigations by diferent methods have also been conducted. Density functional theory (DFT) (Sluiter et al. 2003, 2004), quantum chemical (Patchkovskii and Tse 2003, Patchkovskii and Yurchenko 2004, Alavi et al. 2005a), statistical thermodynamics (Inerbaev et al. 2006), Monte Carlo (Katsumasa et al. 2007), and classical molecular dynamics (Alavi et al. 2005b, 2006) modeling have been used to study pure and mixed hydrogen clathrate hydrates. he possibility of i lling of large cages by clusters of hydrogen molecules was shown using these models. Various conclusions have been drawn from these studies regarding the H2 occupancy of small cages of the host lattice. Despite numerous experimental and theoretical investigations, the problem of the possible existence of hydrates with hydrogen content exceeding that in the hydrogen CS-II hydrate (4.96 wt%) still remained. Hydrogen storage in hydrates (gasto-solids technology) is an alternative technology to liqueied hydrogen at cryogenic temperatures or compressed hydrogen at high pressures. Now hydrate technology for hydrogen storage as well for storage and transportation of natural gas is developing, and further investigations are needed to i nd a stable phase of hydrogen clathrate hydrates under moderate pressure and room temperature. his includes studies of the stability conditions under which a hydrate with higher hydrogen storage capacity can be formed at these conditions. We use our model described in Section 2.2 to calculate the curves of monovariant three-phase equilibrium gas–hydrate–ice Ih and the degree of i lling of the large and small cavities for pure hydrogen of cubic CS-II structure in a wide range of pressure and at low temperatures. he calculations were performed using the 128 water molecules in supercell of ice Ih. For calculations of free energy, the molecular coordinates of ice Ih and hydrogen hydrates (the centers of mass positions and orientation of molecules in the unit cell) were optimized by the conjugate gradient method. For clathrate hydrate of CS-II, the initial coniguration for calculations was a single unit cell with 136 water molecules and diferent numbers of hydrogen in large (L) and small (S) cavities. he initial positions of water oxygen atoms of the hydrate lattice were taken from the x-ray analysis of the double hydrate of tetrahydrofuran and hydrogen sulide performed by Mak and McMullan (1965). Considering ice Ih and clathrate hydrate phases, the modiied simple point charge-extended (SPCE) water–water interaction potential was used to describe the interaction between water molecules in the hydrate. he parameters describing short-range interaction between the oxygen atoms σ = 3.17 Å and the energy parameter ε = 0.64977 kJ/mol of Lennard-Jones potential of SPCE potential (Berendsen et al. 1987) were changed and taken to be σ = 3.1556 Å; ε = 0.65063 kJ/mol. he charges on hydrogen (qH = +0.4238|e|) and on oxygen (qO = −0.8476|e|) of SPCE model were not changed. he modiied SPCE potential signiicantly improves the agreement between the calculated cell parameters for ice Ih and methane hydrate with the experimental values. he protons were placed according to the Bernal–Fowler ice rules and the water molecules were oriented such that the total dipole

2-10

Handbook of Nanophysics: Principles and Methods

moment of the unit cell of the hydrate vanishes. he long-range electrostatic interactions were computed by the Ewald method. he guests were considered as spherically symmetric particles and their interaction potential was formulated as U H2 − H2 =

6 ⎛1−r ⎞ D0 ⎡ ⎛ ρ⎞ ⎤ ζ⎟ − ζ ⎜ ⎟ ⎥ ⎢6exp ⎜ ⎝r⎠ ⎥ ζ−6 ⎢ ⎝ ρ ⎠ ⎣ ⎦

(2.16)

where r is intermolecular separation D 0 is the potential well depth ρ is the intermolecular distance at the minimum of the potential (i.e., where U H − H = − D0 ) ζ is a dimensionless “steepness factor” 2

2

he exponential-6 (“exp-6”) potential used here is a more realistic potential as it gives the correct functional form at small intermolecular separations (Ross and Ree 1980). For modeling the H2O–H2 interaction, the LJ part of the SPCE potential has been itted by an exp-6 potential and host–guest interaction potential parameters are represented as

he calculated pressure dependence of the chemical potentials ∼ μQ of water molecules of hydrogen hydrates of CS-II with single, double, triple, and quadruple occupation of 51264 cages by H2 at T = 200 K without entropy part and μ0Q of water molecules of empty host lattice of C-II hydrate are displayed in Figure 2.5. In all cases, the 512 cage is occupied by only one hydrogen molecule. Figure 2.6 shows the changes of chemical potential of empty ∼ 0 host lattice, Δμ Q (nL ) = μQ − μ Q, under inluence of hydrogen molecules. Based on these results, the following linear approximation, ΔμQ(nL) = 0.093 × nL kJ/mol, was determined in order to estimate the change of chemical potential in the cases when the occupation of large cage does not equal to integer. As can be seen from Figures 2.5 and 2.6, the change in chemical potential of the empty host lattice under inluence of guest molecules was signif∼ − μ ice between chemical potenicant. he diference Δμ Q = μ Q Q tials of ice and host lattice is increased and reached the values T = 200 K

–46.2 –46.4

1H2

–46.6

2H2 3H2

(2.17)

ζ H2 O − H2 = ζ H2 O − H2 Oζ H2 − H2

(2.18)

ρH2 O − H2 + ρH2 − H2 2

(2.19)

ρH2 O − H2 =

he H2−H2 interaction potential parameters: he long-distance dispersion interaction part was taken from Murata et al. (2002) and the short-range repulsion part was estimated with the density functional calculations (Sluiter et al. 2003, 2004) using the all-electron mixed basis (TOMBO) method (Bahramy et al. 2006). Potential parameters of the itted H2−H2 and itted LJ part of host–host interaction are listed in Table 2.2. he intermolecular distance at the minimum of the potential ρ = 2.967 Å is shorter than the minimum obtained for the H2–H2 potential surface (3.45 Å) by ab initio calculations for the dimer (Carmichael et al. 2004). he diference is due to the fact that we did not include quadrupole–quadrupole interaction of hydrogen molecules in dispersion region. However, the present empirical potential better describes the interaction between hydrogen molecules in water cavities, because the experimental determined distance between the four tetrahedrally arranged D2 molecules in the large cage of CS-II clathrate hydrate is found to be 2.93 Å (Lokshin et al. 2004). TABLE 2.2 Potential Parameters of the “exp-6” Potential as Described in the Text Parameter

D0 (kJ/mol)

ρ (nm)

ς

H2–H2 H2O–H2O

0.7295 0.5206

0.2967 0.323

10.92 14

–47.0

4H2

–47.2 Empty CS-II

–47.4 –47.6 –47.8 –48.0 0

100

200

300

400

500

P, bar

FIGURE 2.5 Chemical potentials of water molecules (host lattice) for clathrate hydrates with diferent occupation of hydrogen molecules in large cages. P = 500 bar, T = 200 K 0.50 0.45 Δμ, kJ/mol

DH2O − H2 = DH2O − H2O DH2 − H2

μQ, kJ/mol

–46.8

0.40 0.35 Δμ = 0.093 × nL(H2) kJ/mol

0.30 0.25 0.20

1.0

1.5

2.0

2.5

3.0

3.5

4.0

nL(H2)

FIGURE 2.6 Changes of chemical potential of host lattice as a function of the hydrogen molecule occupation of large cage.

2-11

Theories for Nanomaterials to Realize a Sustainable Future Hydrogen hydrate CS-II, T = 200 K

T = 200 K

–45

1.0 1H2 × 512

0.8

Sum of occupied large cavities –46 μQ , kJ/mol

4H2 × 51264 3H2 × 51264

Y

0.6 0.4

2H2 × 51264 0.2 0.0

1H2

0

250

500

750

–48

P ~ 510 bar

× 51264

1000 1250 P, bar

1500

1750

0

2000

FIGURE 2.7 Degree of i lling of the small and large cavities of H2 hydrate of CS-II at 200 K.

close to those that are used in construction of phase diagrams within framework of the van der Waals and Platteeuw theory. It was shown that at low temperatures with increasing pressure, the i lling of large cages steadily increases from one to four hydrogen molecules (Figure 2.7). As follows from the results of calculations, the illing degrees difer notably from integer at low pressure and tend to whole number with pressure increasing. he temperature dependence of i lling degree of both large and small cages has been estimated at pressure 2 kbar and compared with experimental results (Lokshin et al. 2004) as shown in Figure 2.8. he calculated results obtained within our approach are in good agreement with experimental data. he calculated pressure dependences of the chemical potentials of water molecules of ice Ih, empty host lattice of CS-II hydrate,

200

400

600

800

1000

P, bar

FIGURE 2.9 Chemical potentials of water molecules μQ of ice Ih (solid line), empty host lattice of hydrate of CS-II (dashed line), and hydrogen hydrate (CS-II) with (short dot line) and without (dot line) entropy part taken into account.

of hydrogen hydrates of CS-II with and without entropy term at temperature T = 200 K are displayed in Figure 2.9. Intersection of chemical potential curves of ice Ih and of host lattice with the account of entropic contribution deines the pressure of monovariant equilibrium at a given temperature. At this temperature, it was found that the hydrogen hydrate exists in a metastable phase at low pressure and is stable at pressures greater than P = 510 bar. he calculated curves P(T) of monovariant equilibrium of the gas phase, ice Ih, and H2 hydrates CS-II are displayed in Figure 2.10. he calculated curves for the hydrogen hydrate agree well with the experiment (Barkalov et al. 2005, Lokshin and Zhao 2006).

P = 2 kbar

260

4.0

Ice lh

240

3.5 Large cages occupancy

Hydrogen clathrate CS-II

220 T, K

3.0 2.5 n(H2)

–47

200

2.0 180

1.5

160

1.0 Small cages occupancy

0.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

P, kbar

0.0 140

160

180

200 220 T, K

240

260

280

FIGURE 2.8 Number of hydrogen molecules included in small and large cages. Open black circles are experimental data taken from Lokshin et al. (2004).

FIGURE 2.10 Calculated and experimental curve P(T) of monovariant equilibrium of the gas phase, ice Ih and hydrogen hydrate. Experimental data was taken from Lokshin and Zhao (2006) and Barkalov et al. (2005) (open and i lled circles, respectively). Dotted line presents ice Ih–liquid water equilibrium phase transition.

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Handbook of Nanophysics: Principles and Methods

2.3.4 Guest–Guest and Guest–Host Interactions in Hydrogen Clathrate In the case of irst-principles methods, the calculations of electronic and structural properties of gas clathrate involve two steps (Patchkovskii and Tse 2003). he irst step is an optimization procedure carried out using HF or DFT levels. In the second step, single point energy calculations on optimized HF or DFT structures are performed using the second-order Møller-Plesset (MP2) level, respectively. h is scheme works when the guest molecule its snugly in the cage and locates at the cage center. However, when the van der Waals volume of guest is smaller than the cavity diameter, the determination of equilibrium position of guest inside cage becomes diicult. It is well known that HF and DFT do not well reproduce the dispersive interaction, which is probably important for the proper description of guest– host and guest–guest interactions in gas clathrate systems. herefore, in order to avoid this problem, we have used the MP2 method for both optimization and electronic structure calculations of guest molecules inside of a large water cluster

FIGURE 2.11

Initial structure of the (H2O)43 water cluster.

(a)

(d)

(b)

(e)

represented the fragment of CS-II hydrate structure in which the two fundamental cages (512 and 5126 4) connected directly, as shown in Figure 2.11. All calculations reported in this study were carried out using the Gaussian 03 package (Frisch et al. 2004). Full geometry optimization of selected cage-like structures of water clusters with and without enclathrated guests were performed at the MP2 level. A large yet computationally manageable basis set, 6-31 + G(d) including polarization and difuse functions, was used. he inclusion of dif usion functions in the basis set is necessary for a better description of the structure and energetic of hydrogen-bonded complexes (Frisch et al. 1986). he optimizations were performed using the redundant internal coordinate procedure (Peng et al. 1996). In the irst step, we estimate the diference in equilibrium position of methane molecule inside 512 and 51262 cages obtained by HF, DFT and MP2 levels with the same basis sets. he results of calculations at diferent levels of theory have shown that in the case of the dodecahedral cage (H2O)20, the equilibrium position of methane molecule remains at the center of cavity. However, in the case of tetrakaidecahedral cage (H2O)24, the optimal geometry of guest is dependent on the method of calculation. Only when the MP2/6-31 + G(d) method for optimization scheme is used, the guest position moved of-center (see Figure 2.12). As a result, the guest–host interaction energy for (H2O)24 water cage also varies with the calculation method. hus, the MP2 interaction energy between the CH4 molecule and dodecahedral cage is equal to −6.81 kcal/mol. he situation is not signiicantly changed in the case of (H2O)24 cluster. he interaction energy has a value of −6.18 kcal/mol, which is close to the interaction energy of CH4 with the (H2O)20 cage. When the HF/6-31 + G(d) method is used, the interaction energy as a result of interaction of methane with the dodecahedral cage (H2O)20 is equal to −6.63 kcal/mol, which is very close to the same energy value obtained at MP2 level. However, in the case of the large cage (51262), the HF interaction energy between the methane molecule and tetrakaidecahedral

(c)

(f )

FIGURE 2.12 Optimized structures of CH4 molecules inside 512 cage. (a) HF/6–31+G(d), (b) B3LYP/6–31+G(d), (c) MP2/6–31+G(d), and 51262 cage (d) HF/6–31+G(d), (e) B3LYP/6–31+G(d), and (f) MP2/6–31+G(d).

2-13

Theories for Nanomaterials to Realize a Sustainable Future

cage is equal to −0.23 kcal/mol, which is signiicantly diferent from results obtained at MP2 level of theory. his shows that the MP2 method, which captures dispersion interactions much better than DFT, is able to more accurately estimate the equilibrium position of small guests inside large cages. Since the clathrate hydrate of cubic structure II consists of two fundamental cages (512 and 51264), the combination of these cages connected directly (see Figure 2.11) both without and with insertion of hydrogen molecules has been selected. In our study, three possibilities have been considered. First, there are total four hydrogen molecules located in one large cage; second, there are totally two molecules occupying one small cage; and third, there are totally six molecules with four and two in large and small cages, respectively. Figure 2.13a shows the optimized structures of the fused cages with four H2 molecules enclathrated in a large cage. he interaction energy between hydrogen molecules and the (H2O)43 cluster is equal to −0.972 kcal/mol. he distances between H2 molecules inside the cage was found to be in a region between 2.8 and 3.1 Å, which correlated well with experimental value (2.93 Å) reported in Lokshin et al. (2004). he H–H bond lengths are slightly elongated by 0.001 Å as compared with the bond length of free molecule. Moreover, the water cages are almost undistorted. Due to the large size of the void, the hydrogen molecules, by moving closer to the cage wall, interacts with the water molecules. h is leads to a small charge transfer (0.01 e) from water to hydrogen molecules and as shown in Figure 2.14a. he diferent results have been observed in the case of double occupancy of small cage

(a)

(see Figure 2.13b). he structural properties of hydrogen dimer are diferent as compared to the previous case. hus, it has been found the shorter distance (2.71 Å) between H2 molecules that indicates the repulsion interaction between guest molecules. As in the case of water cluster with four molecules in large cage, the interaction with the cavity again leads to a charge transfer (0.014 e) from water to hydrogen molecule (see Figure 2.14b), which is larger than in the case of large cage i lling. herefore, in this case the interaction energy between hydrogen and water molecules is equal to +2.37 kcal/mol. he positive value indicates the instability of hydrogen cluster inside a small cage. his instability results from two factors. First, if we remove hydrogen cluster from water cavity and i x the geometry of the cluster, the value of interaction between hydrogen molecules is equal to +0.75 kcal/mol and hence it indicates repulsion. Second, the i lling of large cavity is necessary for stabilization of the water cluster network. Thus, in the case of filling both large and small cages by four and two hydrogen molecules, respectively, the interaction energy between hydrogen and water molecules is equal to −1.74 kcal/mol. In this case, the encapsulation of hydrogen molecules in a large cage has positive efect not only for stabilization of the water structure but also on the equilibrium position of hydrogen molecules inside a small cage, as shown in Figure 2.13c. he distances between H2 molecules inside the small cage are found to be 2.8 Å. Recently, it was found that the formation pressure of hydrogen clathrate can be signiicantly reduced by adding second guest

(b)

(c)

FIGURE 2.13 Optimized structures of H2 molecules inside the (H 2O)43 water cluster using MP2/6–31+G(d) method: (a) four guests in large cages; (b) two in small cages; (c) four and two molecules in large and small cages, respectively.

(a)

(b)

FIGURE 2.14 Charge density isosurface: (a) four hydrogen molecules in large cage; (b) two hydrogen molecules in small cage. White color is accumulation of electrons and gray is depletion of electrons.

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Handbook of Nanophysics: Principles and Methods

molecule, such as tetrahydrofuran (THF) (Florusse et al. 2004). Our calculations also indicated that the encapsulation of THF in large cage is strongly afected on stability of selected water cluster. As a result, the value of interaction energy between THF and (H2O)43 water cluster is equal to −14.48 kcal/mol. h is value is signiicantly larger than that in the case of four hydrogen molecules. Moreover, it is also larger than the interaction between methane molecule and water cavities. It is found that four hydrogen molecules in a large cage energetically stabilize the large fused cluster but it is not possible by accommodating two hydrogen molecules in a small cage. he charge density distribution shows that there exists a weak interaction between hydrogen molecules and water cages. Interactions of the THF molecule with the host are larger than the interaction of hydrogen with the host, meaning that “help gas” molecules play a more signiicant role in the stabilization of hydrogen hydrate. hese results also indicate that the interaction between the guest and the host is essential and should be accurately estimated in the calculation of the phase diagram of hydrogen hydrate.

2.3.5 Mixed Methane–Hydrogen Clathrate Hydrate As mentioned before, hydrogen can be stored at low pressures within the clathrate hydrate lattice by stabilizing the large cages of water host framework with a second guest molecule, tetrahydrofuran (Florusse et al. 2004). Moreover, the hydrogen storage capacity in THF-containing binary clathrate hydrates can be increased at modest pressures by tuning their composition to allow the hydrogen guests to enter both the large and the small cages, while retaining low-pressure stability (Lee et al. 2005). It can be expected that mixed hydrogen-containing hydrates with a second guest molecule with smaller molecules, which are able to stabilize any cavity of hydrate and may in deinite thermodynamic conditions, also to decrease hydrate formation pressure. In this case, the i lling of small cavities by the second guest allows hydrogen molecules to occupy the large ones and hence increases the hydrogen storage density. In such mixed hydrates, hydrogen mass content would be more than in mixed hydrates with large second-component molecules obtained so far. he possibility of mixed hydrates formation at equilibrium with gas

(a)

(b)

phase was conirmed experimentally for gas mixtures of hydrogen with methane (Struzhkin et al. 2007). In hydrogen–methane– water system at low temperatures, T = 250 K and relatively high pressure P = 3 kbar, a new solid phase is formed. Raman spectroscopy shows hydrogen enclathration in this solid phase. Recently, the mixed H2 + CO2 CS-I hydrate at 20% CO2 in the gas phase was obtained (Kim and Lee 2005). It was shown that clusters of two hydrogen molecules are included in the small cages of the formed hydrate. Usually, the large cages of CS-I, CS-II, and sH clathrate hydrates it around a single large guest molecule, but these cages are too large for a single H2 molecule to stabilize them. For this reason, the existence of hydrogen hydrate with single occupancy of large cavities was not expected. here are pentagonal dodecahedron (a polyhedron with 12 pentagonal faces 512) cages in all hydrate structures as the basic small cavity. he basic 512 cavities combined with 51262 cavities form CS-I, with 51264 cavities the CS-II, and with 435663 and 51268 cages the sH structure (Figure 2.15). At equilibrium of gas phase mixture of guest molecules with water (ice Ih) at dei nite conditions, the formation of a mixed hydrate can be expected. In this case, increasing of the hydrate composition may become possible by means of component ratio variation in the gas phase. herefore, we study the thermodynamic properties of binary hydrate systems using our proposed model. In order to investigate efect of stabilization by methane molecules, we have considered CS-II and sH clathrate hydrates. Composition and ields of thermodynamic stability for these hydrates with multiple illing of large cages have been estimated and the chemical potentials of host lattice molecules were found. he conditions (pressure and temperature) for the formation of hydrogen + methane mixed CS-II and sH clathrate hydrates are determined (Belosludov et al. 2009). he composition of mixed methane–hydrogen hydrates formed from gas mixture depends on temperature, pressure, and the composition of the gas phase. Methane molecules can i ll both small and large cages of sH and CS-II hydrates while hydrogen molecules i ll the remaining cages. Relationships of small and large cage i llings are determined by interaction energies of methane molecules in cages with the water host lattice and by conigurational entropy part of free energy. h is corresponds to the stabilization efect, which is determined by methane concentration in the gas phase.

(c)

FIGURE 2.15 Types of small and large cages in gas hydrates of (a) CS-I (512 and 51262 , respectively), (b) CS-II (512 and 5126 4 , respectively), and (c) sH (512 , 4 356 63, and 51268 , respectively). In all cases, methane molecule is in 512 cage and hydrogen molecules are in others.

2-15

Theories for Nanomaterials to Realize a Sustainable Future T = 270 K, CH4-H2 hydrate CS-II, 1% CH4 1H2 in small cage

1.0

T = 250 K

1.1

4H2

1.0

5H2

0.9

0.8

0.8 0.7

0.6 Y

Y

0.6 1H2

0.4

1CH4 in large cage

0.2

3H2

0.5

CH4

0.4 1CH4 in small cage

0.3 1H2

0.2

2H2

0.1 0.0

0

200

400

600

(a)

0.0

800 1000 1200 1400 1600 1800 2000 P, bar

0

500

4H2 2H2 3H2

1000

1500

(b)

2000

2500

3000

3500

4000

P, bar

FIGURE 2.16 Degree of i lling of large cages by methane and hydrogen (a) in CS-II hydrate at 10% and (b) in sH hydrate at 50% of methane in the gas phase. (Reproduced from Belosludov, V.R. et al., Int. J. Nanosci., 8, 57, 2009. With permission.) T = 270 K 25% CH4

99% H2

3.6 3.2

90% H2

2.8 75% H2

2.4 2.0 1.6

50% CH4

1.5 m(H2)/m(H2O)

m(H2)/m(H2O) × 100%

T = 200 K

2.0

4.0

1.2

1.0

75% CH4

0.5

0.8 0.4 0 (a)

200

400

600

0.0

800 1000 1200 1400 1600 1800 2000 P, bar

(b)

0

500

1000

1500

2000

2500

3000

3500

4000

P, bar

FIGURE 2.17 (a) Mass percentage at 270 K of hydrogen abundance in CS-II hydrates at 25%, 10%, and 1% of methane in the gas phase; (b) mass percentage at 200 K of hydrogen abundance in sH hydrate: at 75%, 50% and 25% of methane in gas phase. (Reproduced from Belosludov, V.R. et al., Int. J. Nanosci., 8, 57, 2009. With permission.)

Our model permits to ind composition of hydrates for the given T, P, and the gas phase component ratio. At increasing pressure, the large cages are irst i lled preferentially by methane molecules and then they are gradually expelled by hydrogen molecules, as shown in Figure 2.16a and b. Filling of small cages by methane and hydrogen molecules grows with increasing pressure. It has been seen that in the case of 1% methane concentration in gas phase, the hydrogen molecules occupied mostly 90% of small cages in CS-II hydrate in the high-pressure region. he total i lling of cavities can be done by a mass of guests per mass of water in hydrate (Figure 2.17a and b). Hydrogen content continues to increase slightly due to multiple illing of large cages. Mass percentage of hydrogen in mixed hydrogen–methane

CS-II hydrate can amount up to 4 wt% at lower concentration of methane in gas phase and higher pressure, for sH hydrate, it can reach 1.5 wt%. he pressure of monovariant equilibrium “ice Ih–gas phase–mixed CS-II hydrate” decreases in comparison with the pressure of pure hydrogen hydrate formation with increasing methane concentration in the gas phase, as shown in Figure 2.18. his result indicated that it is possible to form mixture hydrogen–methane hydrate of structure CS-II at low (30 bar) pressure and 25% concentration of methane in the gas phase. his pressure is about 40 times lower that one needed to form pure hydrogen clathrate of CS-II structure. Ater that, the hydrogen concentration can be increased from 0.4 up to 2.8 wt% by increasing pressure.

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Handbook of Nanophysics: Principles and Methods

molecules start gradually to be expelled by hydrogen molecules. At the same time, i lling of small cages by methane and hydrogen molecules grows with increasing pressure. he pressure of monovariant equilibrium “ice Ih–gas phase–mixed CS-II hydrate” lowers in comparison with the formation pressure of pure hydrogen hydrate sII and mixed H2-CH4 hydrate sH with increasing methane concentration in the gas phase.

T = 270 K, Mixed methane–hydrogen hydrate –47

P ~ 1300 bar

μ, kJ/mol

–48

P ~ 470 bar P ~ 30 P ~ 70 bar bar

–49 –50

Pure H2 hydrate 1% CH4 10% CH4

–51

2.4.1 Introduction

25% CH4

Ice Ih –52 0

200

400

600

800 1000 1200 1400 1600 1800 2000 P, bar

FIGURE 2.18 Chemical potentials of water molecules μQ for ice Ih, mixed H2-CH4 clathrate CS-II hydrate at 0, 1%, 10%, and 25% of methane in the gas phase. (Reproduced from Belosludov, V.R. et al., Int. J. Nanosci., 8, 57, 2009. With permission.)

Monovariant equilibrium “ice Ih–gas phase–mixed sH hydrate” at T = 200 K is shown in Figure 2.19. It can be seen that the pure hydrogen clathrate of structure sH is a metastable phase at this temperature. However, sH hydrogen clathrate can be stabilized at P = 400 bar and at 75% methane content in the gas phase (see Figure 2.19). In this case, the maximum amount of hydrogen storage can be achieved at the value of 1.5 wt% at high pressure. In conclusion, it was found that at increasing pressure, the large cages are i lled preferentially by methane molecules, content of which in hydrate reaches its maximum and then these T = 200 K sH H2

–45.5 CH4 25%

–46.0 CH4 50%

μ, kJ/mol

–46.5 –47.0

2.4 Metal–Organic Framework Materials he storage of gas in solids is a technology that is currently attracting great attention because of its many important applications (Gupta 2008, Hordeski 2008, hallapally et al. 2008). Perhaps the most well-known current area of research centers on the storage of hydrogen for energy applications, with viable energy storage for hydrogen economy as the ultimate goal (Langmi and McGrady 2007, Züttel et al. 2008, Graetz 2009, Hamilton et al. 2009). here are several reasons why one might want to store hydrogen inside a solid, rather than in a tank or a cylinder. First, it is relatively common for more gas to be stored in a given volume of solid than one can store in a cylinder, leading to an increase in storage density of the gas. Second, there may be safety advantages associated with storage inside solids, especially if high external gas pressures can then be avoided. As a good example, the high sorption ability for acetylene from acetylene/carbon dioxide gas mixture on metal–organic microporous material [Cu 2(pzdc)2(pyz)] (pzdc = pyrazine2,3-dicarboxylate, pyz = pyrazine) was recently determined at low pressure, using both extensive i rst-principles calculations and diferent experimental measurements. It was found that in the nanochannel, only acetylene molecules are indeed oriented to basic oxygen atoms and form a one-dimensional chain structure aligned to the host channel structure (see Figure 2.20). It was shown that the concept using designable regular metal–organic microporous material could be applicable to a highly stable, selective adsorption system (Matsuda

CH4 75%

–47.5 –48.0 ice Ih

–48.5 0

200

400

P ≈ 400 bar 600

800

1000

1200

1400

P, bar

FIGURE 2.19 Chemical potentials of water molecules μQ for ice Ih, pure hydrogen hydrate sH and mixed methane–hydrogen sH hydrates at 25%, 50%, and 75% of methane in the gas phase. (Reproduced from Belosludov, V.R. et al., Int. J. Nanosci., 8, 57, 2009. With permission.)

FIGURE 2.20 he stable coniguration of acetylene molecules into the metal−organic microporous material (Cu 2(pzdc)2(pyz)).

Theories for Nanomaterials to Realize a Sustainable Future

et al. 2005). Finally, small amounts of gases are actually easier to handle when stored in a small amount of solids. here exist several approaches to store hydrogen gas on solids (Sakintuna et al. 2007, Varin et al. 2009). One important strategy involves the storage of hydrogen reversibly on substances as in chemical hydrides (Orimo et al. 2007). Another involves the adsorption of the hydrogen gas inside a porous material, in which the adsorption occurs by a physical means (Yaghi et al. 2003, Morris and Wheatley 2008).

2.4.2 Metal Organic Frameworks as Hydrogen Storage Materials Among the materials that are promising for the physisorption of hydrogen gas are MOFs, crystalline microporous solids comprised of metal building units and organic bridging ligands (Kitagawa et al. 2004, Rowsell and Yaghi 2004). MOFs have many advantages. heir structural versatility has allowed the rational design and assembly of materials having novel topologies and with exceptional host–guest properties important for much-needed industrial applications. hey can be made from low-cost starting materials, their synthesis occur under mild conditions, and the manufacturing yields are high. hey are completely regular, have high porosity, and highly designable frameworks. MOFs contain two central component connectors and linkers as shown in Figure 2.21. Transition-metal ions are versatile connectors because, depending on the metal and oxidation state (range from 2–7), they give rise to geometries such as linear, T- or Y-shaped, tetrahedral, square-planar, square-pyramidal, and so on. Linkers provide a wide variety of linking sites with tunable binding strength and directionality. Inorganic, neutral organic, anionic organic, and cationic organic ligands can act as linkers. Various combinations of the connectors and linkers aford various speciic structural motifs. he important features of MOF are the ability to absorb of various gases (such

3D - MOF + Inorganic unit

Linkers

1D - Polymer 2D - Network

FIGURE 2.21 Schematic presentation of the basic principles of formation MOFs and their possible topologies.

2-17

as N2, O2, CO2, CH4) as well as diferent organic molecules at ambient temperature, which is important for storage, catalytic, separation, and transport applications. However, because of their typically weak interaction with hydrogen, these materials function best only at very low temperature and their use as storage media in vehicles would require cryogenic cooling (Rosi et al. 2003, Rowsell et al. 2004, Chen et al. 2005, Wong-Foy et al. 2006). A very recent development in the usage of MOFs is the metal ion impregnation, which provides the necessary binding energy and also increases the storage capacity (Liu et al. 2006, Mulfort and Hupp 2007, 2008, Yang et al. 2008). In this section, we have discussed the adsorption of hydrogen molecule on the MOFs by using DFT. We would like to caution the readers that as mentioned before, the standard DFT functionals cannot quantitatively describe the dispersion part of van der Waals interaction. However, since our system involves huge size and more than 100 atoms, to reduce the computation time, we have used DFT methods in our calculations to explain the diference in the adsorption of hydrogen molecules on the pure and Li-doped MOFs. Moreover, we show that Li cations strongly adsorbed on the organic linkers and each Li can hold up to three hydrogen molecules in quasimolecular form. Further, to understand how to control of the structure on doping Li, we have studied the isoreticular MOFs (IRMOF) and their adsorption ability toward hydrogen. A considerable number of computational studies regarding hydrogen molecules interacting with IRMOFs have recently been published. he interaction energies and the corresponding geometries have been calculated at diverse levels of theory. In the past, the interaction energy of H 2 with the organic linkers has been determined to be 0.03–0.05 eV (Mulder et al. 2005, Mueller and Ceder 2005, Buda and Dunietz 2006, Gao and Zeng 2007). h is energy is very similar to the theoretically calculated energy of interaction of a hydrogen molecule with benzene (Kolmann et al. 2008, Mavrandonakis and Klopper 2008). he metal–organic framework-5 (MOF-5) is the composition Zn4O(BDC)3 (BDC = 1,4-benzenedicarboxylate) with a cubic three-dimensional extended porous structure (Rosi et al. 2003). To model the structure of MOF-5, primitive cell containing 106 atoms were used. he atomic positions of optimized structure have good agreement with the experimental values, which provides us conidence on our theoretical method. here exist four possible sites where hydrogen could be physisorbed on the MOF unit. he sites identiied are shown in Figure 2.22. he H 2 adsorption sites near to Zn atom were found to have the highest binding energy. he strongest interaction is found for H 2 perpendicular to the central Zn–O bond that is parallel to the cluster surface, as shown in Figure 2.22a. he distance between the molecular center of H 2 and the closest Zn atom is ∼3.21 Å, which is in agreement with the previous theoretical prediction based on cluster models (Kuc et al. 2008a). According to the neutron powder difraction results on the Zn-MOF system, the adsorption of hydrogen occurs near the O4Zn tetrahedral site (Rowsell et al. 2005). However, recent theoretical calculations show also that the H 2 molecule could be strongly adsorbed

2-18

Handbook of Nanophysics: Principles and Methods

(a)

(b)

(c)

(d)

FIGURE 2.22 he main four sites for the hydrogen adsorption on MOF-5. he hydrogen molecule is indicated with a ball and stick representation.

on the linker with an interaction energy of 0.035 eV and an intermolecular distance of 3.2 Å (Kuc et al. 2008b). Since the interaction energies are very small, a lot of eforts were made to increase their interaction energies and hence storage capacity both by experimental and theoretical studies. Recently, metal impregnation was found to increase the storage capacity of these materials (Mulfort et al. 2009). Here, we focused interest on the Li functionalization on the MOFs for the study of hydrogen adsorption (Venkataramanan et al. 2009). here exist several advantages in using Li as a dopant. First, is its small size and low weight. Second, Li can be easily ionized and the ionized molecules can hold a large amount of hydrogen by an electrostatic charge-quadruple and charge-induced dipole interactions (Niu et al. 1992). hird, Li cations can hold hydrogen

molecules in a quasimolecular form, unlike the transition metal cations that bind hydrogen covalently. he structure of the primitive cell representing the unit cell was fully optimized without any geometrical constraints. A comparison between the optimized structural parameters with experimental value shows a good agreement, which provides conidence in our computational method. We irst attempt to understand the best form of Li that could be doped on MOFs. We found that the Li as cation has the highest adsorption energy of all those studied units (cation, anion, neutral). hen we proceeded to interact one to four molecular H2 on this Li-functionalized MOF-5 by placing them near the Li cation. he optimized structures are shown in Figure 2.23, while the selected geometrical parameters are listed in Table 2.3.

2.151 Å

2.153 Å

(a)

(b)

2.136 Å

2.815 Å

2.213 Å 2.421 Å

(c)

2.185 Å

2.269 Å

2.185 Å 4.097 Å

(d)

FIGURE 2.23 Optimized geometries of adsorbed hydrogen molecules on Li functionalized Zn-MOF-5 with one (a), two (b), three (c), and four (d) hydrogen molecules. Note how successive H2 form a cluster around the Li atom sitting above the center of C6 ring.

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Theories for Nanomaterials to Realize a Sustainable Future TABLE 2.3 Selected Bond Parameters (Å) and Binding Energy per Hydrogen Molecule (eV) for the Adsorption of Hydrogen on Li Functionalized Zn-MOF No. of H2 0 1 2 3 4

Avg. Benzene–Li (Å)

Li–H2 (Å)

Avg. H–H (Å)

ΔEb (eV)

2.206 2.223 2.241 2.257 2.252

— 2.096 2.124 2.315 2.379 (4.036)

0.750 0.760 0.759 0.755 0.755 (0.751)

— 0.213 0.209 0.196 0.163

he hydrogen interaction or the binding energy per hydrogen molecule (ΔEb) can be deined as ΔEb = ET (Li-MOF) + ET (H2 ) − ET (Li-MOF + H2 ) nH2 where ET(Li-MOF + H2) and ET(Li-MOF) refer to the total energy of the Li- functionalized Zn-MOF with and without hydrogen molecule, respectively, while the ET(H2) refers to the total energy of the free hydrogen molecule and n is the number of hydrogen molecules. For the irst H2, the interaction energy is 0.213 eV, with an intermolecular distance of 2.153 Å. he orientation of hydrogen is in a T-shape coniguration with lithium (see Figure 2.23). he H–H bond distance of 0.760 Å corresponds to a very small change compared to the 0.750 Å bond length in a free hydrogen molecule. his indicates that the Li cation holds the H2 molecules by a charge-quadruple and charge-induced dipole interaction. When the second hydrogen is introduced, the Li–H2 distance increases to 2.124 Å and the binding energy per H2 molecule gets reduced to 0.209 eV. To know the number of hydrogen molecules a Li cation can hold, we doped the third and fourth H2 near the Li cation. With the introduction of third H2, the Li–H2 distance increases along with a decrease in the interaction energy value. A noticeable feature is the H–H distance, which decreases with the increase in the number of H2 molecules. When the fourth hydrogen molecule is introduced near the Li cation, three of them remain in place near the Li atom and one H2 molecule moves away to a nonbonding distance of 4.036 Å. hus, each Li cation can hold up to three hydrogen molecules. To investigate the temperature efect and capability of Li ions to remain attached to the linker in Li-functionalized MOF-5, Ahuja and coworkers carried out an ab initio molecular dynamics simulations at 20, 50, 100, 200, and 300 K (Blomqvist et al. 2007). he obtained pair distribution function (PDF) shows that Li binds to the linker irmly throughout the temperature range studied, while with hydrogen molecules stay close to Li up to 200 K. It is noteworthy that MOF-5 has a hydrogen uptake of 2.9 wt% at 200 K and 2.0 wt% at 300 K. hese are the highest reported uptake under comparable thermodynamic conditions. To determine the possibility of extending the Li doping to other IRMOF-5, we studied the adsorption of Li cation on IRMOF-5. We have replaced Zn atoms by metals (M = Fe, Co, Ni, and Cu) from the same row of the periodic table. Upon doping with lithium, we found that the linker unit benzene remains

practically unchanged in all the compounds (Venkataramanan et al. 2009). However, a considerable change in the metal–metal distance, metal–linker distance, and bond angles was observed. he metal–metal distance deviation is shorter in the case of Zn, and very high reduction in distance was observed for iron system. Further, the calculated adsorption energies of Li cation for these compounds do not show any regular trend with the metals. hese results suggest that Li cation doping cannot be extended to all metal systems and Li doping has a great inluence on the structural and volume change on these systems.

2.4.3 Organic Materials as Hydrogen Storage Media To achieve the U.S. Department of Energy’s (DOE) target, the storage materials chosen should consist of light elements like C, B, N, O, Li, and Al. Hence, attempts were made to use pristine carbon nanotube (CNTs), graphene sheets, and BN materials as storage materials (Yang 2003, Niemann et al. 2008, Zhang et al. 2008). However, their interactions with H2 are very weak. Some theoretical and experimental studies have shown that doping of transition metal (TM) atoms can increase the hydrogen uptake because of the enhanced adsorption energy of H2 to the metal atoms (Yoo et al. 2004, Sun et al. 2006, Wen et al. 2008). However, later studies indicate that TM atoms tend to form clusters on the surface due to their large cohesive energy (Krasnov et al. 2007). Recently, the use of organic molecules decorated with alkali metal was found to provide high storage capacity with adsorption energy for hydrogen molecule to be in the range of 0.1–0.3 eV (Huang et al. 2008). In the ield of organic chemistry, several compounds exist that can act as a host for organic molecules and gases. Among the compounds, p-tert-butylcalix[4]arene (TBC) has very high stability and a high sublimation temperature. he packing mode obtained for the crystals shows the existence of each cup-shaped host molecule facing another host molecule in the adjacent layer in order to form a relatively large intramolecular cavity of 270 Å3 (se e Figure

FIGURE 2.24 Packing mode of TBC molecules with inter and intra molecular cavity. Hydrogen atoms are omitted for clarity.

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Handbook of Nanophysics: Principles and Methods

2.24). An intermolecular cavity was found in these crystals that can accommodate gas molecules. In addition, the cavity possesses π-rich character deined by the four aromatic rings, suicient for storing guest molecules. We have considered only the intramolecular cavity for the storage of H2 molecules in the TBC functionalized with the Li atom (Venkataramanan et al. 2008). he structure of TBC was fully optimized without any geometrical constraints. he calculated bond lengths are in good agreement with the experimental values (Enrigh et al. 2003). We irst studied the hydrogen molecule uptake for TBC molecules. he irst hydrogen molecule stays 4.75 Å from the bottom and center of the four phenoxy units and is oriented parallel to the phenoxy group. Another important feature is that the minimum-energy structure has one t-butyl group oriented in the direction of the phenoxy hydrogen. Very recently, a reversible phase transition was detected following the inclusion of gaseous molecules in TBC (hallapally et al. 2008). Upon doping additional hydrogen, the irst hydrogen molecule is pulled inside and resides at a distance of 4.58 Å, and the second hydrogen molecule is partially placed inside the calixarene cavity at a distance of 6.67 Å. he hydrogen molecules in the optimized structures have a bond distance of 0.750 Å, which is the same as that obtained for isolated molecular hydrogen optimized with the PW91 GGA method. his relects the absence of any interaction between the TBC and hydrogen molecules. To increase the storage capacity, we doped TBC molecules by Li atoms. Lithium absorption on the TBC can take place at four diferent sites: by replacing the hydrogen on phenol to form an alkoxy salt (O-Li), as a cation at the center of the four phenoxy groups, and on the walls of the benzene ring, making a

(a)

(b)

(d)

Li-benzene π-complex. he preferred position of Li is found to be on the inside wall of benzene in cationic mode, with a binding energy of 0.714 eV that was calculated from the energy difference between the total energy of Li-functionalized calixarene and TBC. he energy of the neutral compound was about 0.04 eV higher in energy, whereas the least stable structure was the one in which the Li atom is bonded to the outside wall of the benzene ring. In our further studies, we consider the structure with the Li atom bonded on the inside wall complex (LTBC) alone because the Li atom doped will be rigid, and the anions can occupy the pore spaces. It is worth to specify here that these anions present at the intermolecular cavity site can also hold H2 by a charge transfer process. In addition, doping of Li cation at the intermolecular cavity would avoid Li clustering in these systems. We then studied the interaction of LTBC with one to four hydrogen molecules by introducing them into the cavity. he optimized structures of LTBC with hydrogen molecules are shown in Figure 2.25, and their binding energies and bond lengths for the hydrogen molecules are provided in Table 2.4. he preferred position for the irst H2 molecule is found to be 2.085 Å away from the Li atom at a distance of 4.16 Å from the bottom and the center of the phenoxy unit. he H2 binding energy per hydrogen molecule was calculated using the expression BE H2 = (E(LTBC + nH2 ) − E(LTBC) − E(nH2 )) n , where E(LTBC + H2) was the total energy of Li-doped TBC, containing n number of hydrogen and E(LTBC) total energy of the Li-doped TBC.

(c)

(e)

FIGURE 2.25 Optimized geometries for the Li-functionalized calixarene (a) on top view of LTBC with one hydrogen molecule, (b) LTBC with two hydrogen molecules, (c) LTBC with three hydrogen molecules, (d) LTBC with four hydrogen molecules, (e) side view of LTBC with four hydrogen molecules. (Reproduced from Venkataramanan, N.S. et al., J. Phys. Chem. C, 112, 19676, 2008. With permission.)

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Theories for Nanomaterials to Realize a Sustainable Future TABLE 2.4 Binding Energies (BE) for One to Four Hydrogen Molecules Absorbed on TBC and LTBC and Average H–H Bond Distance No. of Hydrogen Molecule 1 H2 2 H2 3 H2 4 H2

TBC

LTBC

BE/H2 (eV)

H–H (Å)

BE/H2 (eV)

H–H (Å)

0.168 0.132 — —

0.750 0.750 — —

0.292 0.248 0.232 0.215

0.758 0.756 0.754 0.751

Source: Reproduced from Venkataramanan, N.S. et al., J. Phys. Chem. C, 112, 19676, 2008. With permission.

he binding energy calculated for the hydrogen molecules is provided in Table 2.4. In the ground-state coniguration, hydrogen atoms are bound in nearly molecular form with a H–H bond length of 0.758 Å and a hydrogen molecule occupying the position parallel to the Li atom. Upon introduction of the second and third hydrogen molecules, the binding energy per molecule decreased to 0.292 and 0.248 eV for the second and third hydrogen molecules, respectively. Another noticeable feature is the increase in the distance between the Li atom and hydrogen with the addition of successive hydrogen. Upon adding of the fourth hydrogen, one hydrogen molecule was found to move away from the Li atom to a distance of 2.97 Å and was inside the cavity of the LTBC. hus, the maximum number of hydrogen molecules bound by an Li atom is three, whereas the LTBC can hold four hydrogen atoms inside its cavity, yielding an approximate gravimetric density of hydrogen of 9.52 wt%. To investigate the stability of Li-functionalized calixarene, the PDF, which is the mean distance between the benzene ring (on which the Li atom is functionalized) and the Li atom, over a temperature range of 20–300 K was calculated using ab initio molecular dynamics. he system was allowed to reach 1500 steps of 1 fs, ater which the coordinates were analyzed. Lithium atom stays close to the benzene ring over the entire temperature range. Following this, LTBC stability with hydrogen molecules was also measured by calculating the mean distance between the Li atom and the center of the hydrogen molecules for the system with four H2 molecules inside its cavity. Lithium was in contact with the benzene ring until 200 K. Further increases in temperature resulted in the decomposition of the complex. herefore, in the case of the Li–H2 system, we have calculated the stability until 200 K. Our simulation results show that the Li–H2 system is stable up to 100 K. Based on these results, we emphasize that the Li-functionalized calixarene is promising material for hydrogen storage applications. Taking into account both the possibility of calixarene structural versatility, which allowed to reduce the weigh of host framework as comparable with p-tert-butylcalix[4]arene and the possibility of the lithium adsorption on diferent sites, it may be likely to archive the DOE goal for hydrogen storage. However, in order to validate this hypothesis, detailed investigations, especially theoretical ones, are necessary to be carried out in the nearest future.

2.5 Conclusions In this chapter, the computational modeling of several nanoporous materials, which show promise as hydrogen storage media, was performed. It was shown that in order to achieve the desired hydrogen storage ability of selected inclusion compounds, the computer-aided design is a useful tool. Using powerful computers and highly accurate methods, we can not only understand the physical and chemical properties of already known materials but also try to propose and optimize the way of practical realization of novel compositions by giving important information for experimentalists. Starting from accurate irst-principles estimation (for example, all-electron mixed basis approach) of the guest–host interaction, the thermodynamics properties and the hydrogen concentration at various pressures can be evaluated using proposed approach. Moreover, the proposed approach can be also applied to design inclusion compounds that target other molecules, such as nitrogen oxide (NOx) and sulfur oxide (SOx) gas molecules, which pollute the environment, resulting in an improvement of the society in which we all live.

Acknowledgments he authors would like to express their sincere thanks to the staf of the Center for Computational Materials Science of the Institute for Materials Research, Tohoku University, for their continuous support of the SR11000-K2/51 supercomputing facilities. We also thank Prof. Michael R. Philpott for critically reading the chapter and his valuable comments. his work has been supported by New Energy and Industrial Technology Development Organization (NEDO) under “Advanced Fundamental Research Project on Hydrogen Storage Materials.”

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Ripmeester, J. A., Tse, J. S., Ratclife, C. I., and Powell, B. M. 1987. A new clathrate hydrate structure. Nature 325: 135–136. Rosi, N. L., Eckert, J., Eddaoudi, M. et al. 2003. Hydrogen storage in microporous metal-organic frameworks. Science 300: 1127–1129. Ross, M. and Ree, F. H. 1980. Repulsive forces of simple molecules and mixtures at high-density and temperature. J. Chem. Phys. 73: 6146–6152. Rowsell, J. L. C. and Yaghi, O. M. 2004. Metal-organic frameworks: A new class of porous materials. Micropor. Mesopor. Mater. 73: 3–14. Rowsell, J. L. C. and Yaghi, O. M. 2005. Strategies for hydrogen storage in metal-organic frameworks. Angew. Chem. Int. Ed. 44: 4670–4679. Rowsell, J. L. C., Millward, A. R., Park, K. S., and Yaghi, O. M. 2004. Hydrogen sorption in functionalized metal-organic frameworks. J. Am. Chem. Soc. 126: 5666–5667. Rowsell, J. L. C., Eckert, J., and Yaghi, O. M. 2005. Characterization of H2 binding sites in prototypical metal-organic frameworks by inelastic neutron scattering. J. Am. Chem. Soc. 127: 14904–14910. Sakintuna, B., Lamari-Darkrim, F., and Hirscher, M. 2007. Metal hydride materials for solid hydrogen storage: A review. Int. J. Hydrog. Energy 32: 1121–1140. Schlapbach, L. and Züttel, A. 2004. Hydrogen-storage materials for mobile applications. Nature 414: 353–358. Sloan, E. D. and Koh, C. A. 2007. Clathrate Hydrates of Natural Gases, 3rd edn. Boca Raton, FL: Taylor & Francis. Sluiter, M. H. F., Belosludov, R. V., Jain, A. et al. 2003. Ab initio study of hydrogen hydrate clathrates for hydrogen storage within the ITBL environment. Lect. Notes Comput. Sci. 2858: 330–341. Sluiter, M. H. F., Adachi, H., Belosludov, R. V., Belosludov, V. R., and Kawazoe, Y. 2004. Ab initio study of hydrogen storage in hydrogen hydrate clathrates. Mater. Trans. 45: 1452–1454. Struzhkin, V. V., Militzer, B., Mao, W. L., Mao, H. K., and Hemley, R. J. 2007. Hydrogen storage in molecular clathrates. Chem. Rev. 107: 4133–4151. Sun, Q., Jena, P., Wang, Q., and Marquez, M. 2006. First-principles study of hydrogen storage on Li12C60. J. Am. Chem. Soc. 128: 9741–9745. Tanaka, H., Nakatsuka, T., and Koga, K. 2004. On the thermodynamic stability of clathrate hydrates IV: Double occupancy of cages. J. Chem. Phys. 121: 5488–5493. hallapally, P. K., McGrail, B. P., Dalgarno, S. J., Schaef, H. T., Tian, J., and Atwood, J. L. 2008. Gas-induced transformation and expansion of a non-porous organic solid. Nat. Mater. 7: 146–150.

Handbook of Nanophysics: Principles and Methods

Tse, J. S. 1994. Dynamical properties and stability of clathrate hydrates. Ann. N.Y. Acad. Sci. 715: 187–206. Udachin, K. A., Ratclife, C. I., Enright, G. D., and Ripmeester, J. A. 1997. Structure H hydrate: A single crystal difraction study of 2,2-dimethylpentane center dot 5(Xe,H2S)center dot 34H2O. Supramol. Chem. 8: 173–176. Varin, R. A., Czujko, T., and Wronski, Z. S. 2009. Nanomaterials for Solid State Hydrogen Storage. New York: Springer. van der Waals, J. H. and Platteeuw, J. C. 1959. Clathrate solutions. Adv. Chem. Phys. 2: 1–57. Venkataramanan, N. S., Sahara, R., Mizuseki, H., and Kawazoe, Y. 2008. Hydrogen adsorption on lithium-functionalized calixarenes: A computational study. J. Phys. Chem. C 112: 19676–19679. Venkataramanan, N. S., Sahara, R., Mizuseki, H., and Kawazoe, Y. 2009. Probing the structure, stability and hydrogen adsorption of lithium functionalized isoreticular MOF-5 (Fe, Cu, Co, Ni and Zn) by density functional theory. Int. J. Mol. Sci. 10: 1601–1608. Von Stackelberg, M. and Miller, H. R. 1954. Feste gas hydrate. II. Structure und raumchemie. Z. Elektrochem. 58: 25–28. Vögtle, F. 1991. Supramolecular Chemistry: An Introduction. Chichester, U.K.: Wiley. Weber, E. 1995. Inclusion compounds. In Kirk-Othmer Encyclopedia of Chemical Technology, 4th edn., Vol. 14, J. L. Kroschwitz, (Ed.) New York: Wiley. Wen, S. H., Deng, W. Q., and Han, K. L. 2008. Endohedral BN metallofullerene M@B36N36 complex as promising hydrogen storage materials. J. Phys. Chem. C 112: 12195–12200. Wong-Foy, A. G., Matzger, A. J., and Yaghi, O. M. 2006. Exceptional H2 saturation uptake in microporous metal-organic frameworks. J. Am. Chem. Soc. 128: 3494–3495. Yaghi, O. M., O’keefe, M., Ockwig, N. W., Chae, H. K., Eddaoudi, M., and Kim, J. 2003. Reticular synthesis and the design of new materials. Nature 423: 705–714. Yang, R. T. 2003. Adsorbents: Fundamentals and Applications. Hoboken, NJ: Wiley-Interscience. Yang, S., Lin, X., Blake, A. J. et al. 2008. Enhancement of H2 adsorption in Li+-exchanged co-ordination framework materials. Chem. Commun. 46: 6108–6110. Yoo, E., Gao, L., Komatsu, T. et al. 2004. Atomic hydrogen storage in carbon nanotubes promoted by metal catalysts. J. Phys. Chem. B 108: 18903–18907. Zhang, T., Mubeen, S., Myung, N. V., and Deshusses, M. A. 2008. Recent progress in carbon nanotube-based gas sensors. Nanotechnology 19: 332001. Züttel, A., Borgschulte, A., and Schlapbach, L. (Ed.) 2008. Hydrogen as Future Energy Carrier. Weinheim, Germany: Wiley-VCH.

3 Tools for Predicting the Properties of Nanomaterials 3.1 3.2

Introduction ............................................................................................................................. 3-1 he Quantum Problem ...........................................................................................................3-2 Constructing Pseudopotentials from Density Functional heory • Algorithms for Solving the Kohn–Sham Equation

3.3

Applications .............................................................................................................................. 3-7 Silicon Nanocrystals • Iron Nanocrystals

James R. Chelikowsky University of Texas at Austin

3.4 Conclusions............................................................................................................................. 3-18 Acknowledgments ............................................................................................................................. 3-19 References........................................................................................................................................... 3-19

3.1 Introduction Materials at the nanoscale have been the subject of intensive study owing to their unusual electrical, magnetic, and optical properties [1–9]. he combination of new synthesis techniques ofers unprecedented opportunities to tailor systems without resort to changing their chemical makeup. In particular, the physical properties of the material can be modiied by coninement. If we conine a material in three, two, or one dimensions, we create a nanocrystal, a nanowire, or a nanoi lm, respectively. Such conined systems oten possess dramatically diferent properties than their macroscopic counterparts. As an example, consider the optical properties of the semiconductor cadmium selenide. By creating nanocrystals of diferent sizes, typically ∼5 nm in diameter, the entire optical spectrum can be spanned. Likewise, silicon can be changed from an optically inactive material at the macroscopic scale to an optically active nanocrystal. he physical coninement of a material changes its properties when the coninement length is comparable to the quantum length scale. his can easily be seen by considering the uncertainty principle. At best, the uncertainty of a particle’s momentum, Δp, and its position, Δx, must be such that ΔpΔx ∼ ћ, where h is Planck’s constant divided by 2π. For a particle in a box of length scale, Δx, the kinetic energy of the particle will scale as ∼1/Δx2 and rapidly increase for small values of Δx. If the electron coninement energy becomes comparable to the total energy of the electron, then its physical properties will clearly change, i.e., once the conining dimension approaches the delocalization length of an electron in a solid, “quantum coninement” occurs. We can restate this notion in a similar context by estimating a coninement length, which can vary from solid to solid, and by

considering the wave properties of the electron. For example, the de Broglie wavelength of an electron is given by λ = h/p. If λ is in the order of Δx, then we expect coninement and quantum efects to be important. Of course, this is essentially the same criterion from the uncertainty principle as λ ∼ Δx would give ΔpΔx ∼ h with p ∼ Δp. For a simple metal, we can estimate the momentum from a free electron gas: p = ћkf. kf is the wave vector such that the Fermi energy, E f = ℏ 2 kf2 /2m. his yields kf = (3π2n)1/3 where n is the electron density. he value of kf for a typical simple metal such as Na is ∼1010 m−1. his would give a value of λ = h/p = 2π/kf or roughly ∼1 nm. We would expect quantum coninement to occur on a length scale of a nanometer for this example. To observe the role of quantum coninement in real materials, we need to be able to construct materials routinely on the nanometer scale. his is the case for many materials. Nanocrystals of many materials can be made, although sometimes it is diicult to determine whether crystallinity is preserved. Such nanostructures provide a unique opportunity to study the properties at nanometer scales and to reveal the underlying physics occurring at reduced dimensionality. From a practical point of view, nanostructures are promising building blocks in nanotechnologies, e.g., the smallest nominal length scale in a modern CPU chip is in the order of 100 nm or less. At length scales less than this, the “band structure” of a material may no longer appear to be quasicontinuous. Rather the electronic energy levels may be described by discrete quantum energy levels, which change with the size of the system. An understanding of the physics of coninement is necessary to provide the fundamental science for the development of nano optical, magnetic, and electronic device applications. h is understanding can best be obtained by utilizing ab initio 3-1

3-2

Handbook of Nanophysics: Principles and Methods

he spatial and energetic distributions of electrons with the quantum theory of materials can be described by a solution of the Kohn–Sham eigenvalue equation [13], which can be justiied using density functional theory [13,14]: ⎡ −ℏ 2∇2    ⎤   + Vext (r ) + VH (r ) + Vxc (r )⎥ Ψ n (r ) = En Ψ n (r ) (3.1) ⎢ ⎣ 2m ⎦ where m is the electron mass. he eigenvalues correspond to energy levels, En, and the eigenfunctions or wave functions are given by Ψn; a solution of the Kohn–Sham equation gives the energetic and spatial distribution of the electrons. he external potential, Vext, is a potential that does not depend on the electronic solution. he external potential can be taken as a linear superposition of atomic potentials corresponding to the Coulomb potential produced by the nuclear charge. In the case of an isolated hydrogen atom, Vext = −e2/r. he potential arising from the electron–electron interactions can be divided into two parts. One part represents the “classical” electrostatic terms and is called the “Hartree” or “Coulomb” potential:   ∇2VH (r ) = −4 πeρ(r )

(3.2)

where ρ is the electron charge density; it is obtained by summing up the square of the occupied eigenfunctions and gives the prob→ ability of inding an electron at the point r  ρ(r ) = e

∑ Ψ (r ) 

n

2

(3.3)

n, occup

The second part of the screening potential, the “exchangecorrelation” part of the potential, Vxc , is quantum mechanical in nature and efectively contains the physics of the Pauli exclusion principle. A common approximation for this part of the potential arises from the local density approximation, i.e.,

Solve:

2V

H = –4πeρ

p

Form: VT = V ion +VH +Vxc

Solve:

–ћ2 2 p V ion +VH +Vxc Ψn = EnΨn 2m Δ

3.2 The Quantum Problem

Assume initial density: ρ

Δ

approaches [10]. hese approaches can provide valuable insights into nanoscale phenomena without empirical parameters or adjustments extrapolated from bulk properties [11,12]. As recently as 15 years ago, it was declared that ab initio approaches would not be useful to systems with more than a hundred atoms or so [11,12]. Of course, hardware advances have occurred since the mid-1990s, but more signiicant advances have occurred in the area of algorithms and new ideas. hese ideas have allowed one to progress at a much faster rate than suggested by Moore’s law. We will review some of these advances and illustrate their application to nanocrystals. We will focus on two examples: a silicon nanocrystal and an iron nanocrystal. hese two examples will illustrate the behavior of quantum coni nement on the optical gap in a semiconductor and on the magnetic moment of a ferromagnetic metal.

Form: ρ = e n, occup

|Ψn|2

FIGURE 3.1 Self-consistent ield loop. he loop is repeated until the “input” and “output” charge densities are equal to within some speciied tolerance.

the potential depends only on the charge density at the point of → → interest, Vxc(r ) = Vxc[ρ(r )]. In principle, the density functional theory is exact, provided one is given an exact functional for Vxc. h is is an outstanding research problem. It is commonly assumed that the functional extracted for a homogeneous electron gas [15] is “universal” and can be approximated by resort to the inhomogeneous gas problem. he procedure for generating a self-consistent ield (SCF) potential is given in Figure 3.1. he SCF cycle is initiated with a potential constructed by a superposition of atomic densities for a nanostructure of interest. (Charge densities are easy to obtain for an atom. Under the assumption of a spherically symmetric atom, the Kohn–Sham equation becomes one dimensional and can be solved by doing a radial integration.) he atomic densities are used to solve a Poisson equation for the Hartree potential, and a density functional is used to obtain the exchange-correlation potential. A screening potential composed of the Hartree and exchange-correlation potentials is then added to the i xed external potential, ater which the Kohn– Sham equation is solved. he resulting wave functions from this solution are then employed to construct a new potential and the cycle is repeated. In practice, the “output” and “input” potentials are mixed using a scheme that accounts for the history of the previous iterations [16,17]. his procedure is diicult because the eigenvalues can span a large range of energies and the corresponding eigenfunctions span disparate length scales. Consider a heavy element such as Pb. Electrons in the 1s state of Pb possess relativistic energies and are strongly localized around the nucleus. In contrast, the Pb 6s electrons are loosely bound and delocalized. Attempting to describe the energies and wave functions for these states is not trivial and cannot easily be accomplished using simple basis functions such as plane waves. Moreover, the tightly bound core electrons in atoms are not chemically active and can be removed from the Kohn–Sham equation without signiicant loss of accuracy by using the pseudopotential model of materials.

3-3

Tools for Predicting the Properties of Nanomaterials

Nucleus Core electrons Valence electrons

FIGURE 3.2 Pseudopotential model of a solid.

he pseudopotential model is quite general and relects the physical content of the periodic table. In Figure 3.2, the pseudopotential model is illustrated for a crystal. In the pseudopotential model of a material, the electron states are decomposed into core states and valence states, e.g., in silicon the 1s22s22p6 states represent the core states, and the 3s23p2 states represent the valence states. he pseudopotential represents the potential arising from a combination of core states and the nuclear charge: the so-called ion-core pseudopotential. he ion-core pseudopotential is assumed to be completely transferable from the atom to a cluster or to a nanostructure. By replacing the external potential in the Kohn–Sham equation with an ion-core pseudopotential, we can avoid considering the core states altogether. he solution of the Kohn–Sham equation using pseudopotentials will yield only the valence states. he energy and length scales are then set by the valence states; it becomes no more diicult to solve for the electronic states of a heavy element such as Pb when compared to a light element such as C.

3.2.1 Constructing Pseudopotentials from Density Functional Theory Here we will focus on recipes for creating ion-core pseudopotentials within the density functional theory, although pseudopotentials can also be constructed from experimental data [18]. he construction of ion-core pseudopotentials has become an active area of electronic structure theory. Methods for constructing such potentials have centered on ab initio or “irst-principles” pseudopotentials; i.e., the informational content on which the pseudopotential is based does not involve any experimental input. he irst step in the construction process is to consider an electronic structure calculation for a free atom. For example, in the case of a silicon atom the Kohn–Sham equation [13] can be solved for the eigenvalues and wave functions. Knowing the

valence wave functions, i.e., 3s2 and 3p2, states and corresponding eigenvalues, the pseudo wave functions can be constructed. Solving the Kohn–Sham problem for an atom is an easy numerical calculation as the atomic densities are assumed to possess spherical symmetry and the problem reduces to a one-dimensional radial integration. Once we know the solution for an “all-electron” potential, we can invert the Kohn–Sham equation and ind the total pseudopotential. We can “unscreen” the total potential and extract the ion-core pseudopotential. his ion-core potential, which arises from tightly bound core electrons and the nuclear charge, is not expected to change from one environment to another. he issue of this “transferability” is one that must be addressed according to the system of interest. he immediate issue is how to dei ne pseudo-wave functions that can be used to dei ne the corresponding pseudopotential. Suppose we insist that the pseudo-wave function be identical to the all-electron wave function outside of the core region. For example, let us consider the 3s state for a silicon atom. We want the pseudo-wave function to be identical to the all-electron state outside the core region: φ3ps (r ) = ψ 3s (r ) r > rc

(3.4)

where φ3sp is a pseudo-wave function for the 3s state rc deines the core size his assignment will guarantee that the pseudo-wave function will possess properties identical to the all-electron wave function, ψ3s, in the region away from the ion core. For r < rc, we alter the all-electron wave function. We are free to do this as we do not expect the valence wave function within the core region to alter the chemical properties of the system. We choose to make the pseudo-wave function smooth and nodeless in the core region. his initiative will provide rapid convergence with simple basis functions. One other criterion is mandated. Namely, the integral of the pseudocharge density within the core should be equal to the integral of the all-electron charge density. Without this condition, the pseudo-wave function differs by a scaling factor from the all-electron wave function. Pseudopotentials constructed with this constraint are called “norm conserving” [19]. Since we expect the bonding in a solid to be highly dependent on the tails of the valence wave functions, it is imperative that the normalized pseudo-wave function be identical to the all-electron wave functions. here are many ways of constructing “norm-conserving” pseudopotentials as within the core the pseudo-wave function is not unique. One of the most straightforward construction procedures is from Kerker [20] and was later extended by Troullier and Martins [21]. l ⎪⎧r exp( p(r )) φ lp (r ) = ⎨ ⎪⎩ψ l (r )

r ≤ rc r > rc

(3.5)

3-4

Handbook of Nanophysics: Principles and Methods

p(r) is taken to be a polynomial of the form 6

p(r ) = c0 +

∑c

2n

r 2n

(3.6)

n =1

his form assures us that the pseudo-wave function is nodeless and by taking even powers there is no cusp associated with the pseudo-wave function. he parameters, c2n, are i xed by the following criteria: (a) he all-electron and pseudo-wave functions have the same valence eigenvalue. (b) he pseudo-wave function is nodeless and be identical to the all-electron wave function for r > rc. (c) he pseudo-wave function must be continuous as well as the irst four derivatives at rc. (d) he pseudopotential has zero curvature at the origin. his construction is easy to implement and extend to include other constraints. An example of an atomic pseudo-wave function for Si is given in Figure 3.3 where it is compared to an all-electron wave function. Unlike the 3s all-electron wave function, the pseudo-wave function is nodeless. he pseudo-wave function is much easier to express as a Fourier transform or a combination of Gaussian orbitals than the all-electron wave function. Once the pseudo-wave function is constructed, the Kohn– Sham equation can be inverted to arrive at the ion-core pseudopotential p Vion, l (r ) =

ℏ 2 ∇2 φ lp − En,l − VH (r ) − Vxc ⎣⎡ρ(r )⎦⎤ 2mφ lp

(3.7)

he ion-core pseudopotential is well behaved as φlp has no nodes; however, the resulting ion-core pseudopotential is both state dependent and energy dependent. he energy dependence is usually weak. For example, the 4s state in silicon computed by the pseudopotential constructed from the 3s state is usually accurate. 1.0 3s radial wave function of Si

0.5

Pseudoatom All-electron 0

–0.5

0

1

2 3 Radial distance (a.u.)

4

5

FIGURE 3.3 An all-electron and a pseudo-wave function for the silicon 3s radial wave function.

Physically this happens because the 4s state is extended and experiences the potential in a region where the ion-core potential has assumed a simple −Zv e2/r behavior where Zv is the number of valence electrons. However, the state dependence through l is an issue, the diference between a potential generated via a 3s state and a 3p can be an issue. In particular, for irst-row elements such as C or O, the nonlocality is quite large as there are no p states within the core region. For the irst-row transition elements such as Fe or Cu, this is also an issue as again there are no d-states within the core. his state dependence complicates the use of pseudopotentials. he state dependence or the nonlocal character of the ion-core pseudopotential for an atom can be expressed as p  Vion (r ) =

∞

∑P V l

†

p l , ion

(r )Pl = Ps †Vsp,ion (r )Ps

l =0

+ Pp†Vpp,ion (r )Pp + Pd†Vdp, ion (r )Pd + ⋯

(3.8)

Pl is an operator that projects out the lth-component. he ioncore pseudopotential is oten termed “semi-local” as the potential is radial local, but possesses an angular dependence that is not local. An additional advantage of the norm-conserving potential concerns the logarithmic derivative of the pseudo-wave function [22]. An identity exists: R

⎛ d 2 ln φ ⎞ 2 2 −2π ⎜ (rφ)2 ⎟⎟ = 4π φ r dr = Q(R) ⎜ dE dr ⎝ ⎠R 0

∫

(3.9)

he energy derivative of the logarithmic derivative of the pseudowave function is i xed by the amount of charge within a radius, R. he radial derivative of the wave function, ϕ, is related to the scattering phase shit from elementary quantum mechanics. For a norm-conserving pseudopotential, the scattering phase shit at R = rc and at the eigenvalue of interest is identical to the allelectron case as Qall elect(rc) = Qpseudo(rc). he scattering properties of the pseudopotential and the all-electron potential have the same energy variation to irst order when transferred to other systems. here is some lexibility in constructing pseudopotentials; the pseudo-wave functions are not unique. his aspect of the pseudo-wave function was recognized early in its inception, i.e., there are a variety of ways to construct the wave functions in the core. he non-uniqueness of the pseudo-wave function and the pseudopotential can be exploited to optimize the convergence of the pseudopotentials for the basis of interest. Much efort has been made to construct “sot” pseudopotentials. By “sot,” one means a “rapidly” convergent calculation using plane waves as a basis. Typically, sot potentials are characterized by a “large” core size, i.e., a larger value for rc. However, as the core becomes larger, the “goodness” of the pseudo-wave function can be compromised as the transferability of the pseudopotential becomes more limited. A schematic illustration of the diference between an “allelectron” potential and a pseudopotential is given in Figure 3.4.

3-5

Tools for Predicting the Properties of Nanomaterials All electron

Pseudopotential Vp(r)

V(r)

rc

r

Potentials

r

1 r

Ψp(r)

Wave function

Ψ(r)

r

rc

r

FIGURE 3.5 Real space geometry for a conined system. he grid is uniform and the wave function is taken to vanish outside the domain of interest. N

FIGURE 3.4 Schematic all-electron potential and pseudopotential. Outside of the core radius, rc, the potentials and wave functions are identical.

3.2.2 Algorithms for Solving the Kohn–Sham Equation he Kohn–Sham equation as cast in Equation 3.1 can be solved using a variety of techniques. Oten the wave functions can be expanded in a basis such as plane waves or Gaussians and the resulting secular equations can be solved using standard diagonalization packages such as those found in the widely used code: vasp [23]. vasp is a particularly robust code, with a wide following, but it was not constructed with a parallel computing environment in mind. Here we focus on a diferent approach that is particularly targeted at highly parallel computing platforms. We solve the Kohn–Sham equation without resort to an explicit basis [24–32]. We solve for the wave functions on a uniform grid within a i xed domain. he wave functions outside of the domain are required to vanish for coni ned systems or we can assume periodic boundary conditions for systems with translational symmetry [33–35]. In contrast to methods employing an explicit basis, such boundary conditions are easily incorporated. In particular, real space methods do not require the use of supercells for localized systems. As such, charged systems can easily be examined without considering any electrostatic divergences. he problem is typically solved on a uniform grid as indicated in Figure 3.5. Within a “real space” approach, one can solve the eigenvalue problem using a inite element or i nite diference approach [24–32]. We use a higher order i nite diference approach owing to its simplicity in implementation. he Laplacian operator can be expressed using

⎛ ∂ 2ψ ⎞ An ψ(x0 + nh, y , z ), ⎜ 2⎟ ≈ ⎝ ∂x ⎠ x n =− N 0

∑

(3.10)

where h is the grid spacing N is the number of nearest grid points An are the coeicients for evaluating the required derivatives [36] he error scales as O(h2N+2). Typically, N ≈ 6 − 8 is used and there is a trade of between using a higher value for N and a coarser grid, or a smaller value for N and a iner grid. Because pseudopotentials are used in this implementation, the wave function structure is “smooth” and a higher i nite diference expression for the kinetic energy converges quickly for a ine grid. In real space, we can easily incorporate the nonlocal nature of the ion-core pseudopotential [24]. he Kleinman–Bylander form [37] can be expressed in real space as ΔVl KB (x , y , z )φ lp (x , y , z ) =

∑G

p lm lm

u (x , y , z ) ΔVl (x , y , z )

lm

Glm

∫u = ∫u

p lm

ΔVl φ lpdx dy dz

p lm

p ΔVl ulm dx dy dz

(3.11)

p where ulm are the reference atomic pseudo-wave functions. he nonlocal nature of the pseudopotential is apparent from the definition of Glm, the value of these coeicients are dependent on the pseudo-wave function, φlp, acted on by the operator ΔV l. his is very similar in spirit to the pseudopotential deined by Phillips and Kleinman [38]. Once the secular equation is created, the eigenvalue problem can be solved using iterative methods [32,39,40]. Typically, a method such as a preconditioned Davidson method can be used [32]. his is a robust and eicient method, which never requires one to store explicitly the Hamiltonian matrix.

3-6

Handbook of Nanophysics: Principles and Methods

l(t ) =

t − (a + b)/2 . (b − a)/2

(3.12)

30

20

C6 (l)

Recent work avoids an explicit diagonalization and instead improves the wave functions by i ltering approximate wave functions using a damped Chebyshev polynomial iltered subspace iteration [32]. In this approach, only the initial iteration necessitates solving an eigenvalue problem, which can be handled by means of any eicient eigensolver. h is step is used to provide a good initial subspace (or good initial approximation to the wave functions). Because the subspace dimension is slightly larger than the number of wanted eigenvalues, the method does not utilize as much memory as standard restarted eigensolvers such as ARPACK and TRLan (hick—Restart, Lanczos) [41,42]. Moreover, the cost of orthogonalization is much reduced as the i ltering approach only requires a subspace with dimension slightly larger than the number of occupied states and orthogonalization is performed only once per SCF iteration. In contrast, standard eigensolvers using restart usually require a subspace at least twice as large and the orthogonalization and other costs related to updating the eigenvectors are much higher. he essential idea of the i ltering method is to start with an approximate initial eigenbasis, {ψn}, corresponding to occupied states of the initial Hamiltonian, and then to improve adaptively the subspace by polynomial i ltering. hat is, at a given self-consistent step, a polynomial i lter, Pm(t), of order m is constructed for the current Hamiltonian H. As the eigen-basis is updated, the polynomial will be diferent at each SCF step since H will change. he goal of the ilter is to make the subspace ˆ n } = Pm (H){ψn } approximate the eigen subspace corspanned by {ψ responding to the occupied states of H. here is no need to make ˆ n}, approximate the wanted eigen subspace the new subspace, {ψ of H to high accuracy at intermediate steps. Instead, the iltering is designed so that the new subspace obtained at each self-consistent iteration step will progressively approximate the wanted eigen space of the i nal Hamiltonian when self-consistency is reached. h is can be eiciently achieved by exploiting the Chebyshev polynomials, Cm, for the polynomials Pm. In principle, any set of polynomials would work where the value of the polynomial is large over the interval of interest and damped elsewhere. Speciically, we wish to exploit the fast growth property of Chebyshev polynomials outside of the [−1, 1] interval. All that is required to obtain a good i lter at a given SCF step, is to provide a lower bound and an upper bound of an interval of the spectrum of the current Hamiltonian H. he lower bound can be readily obtained from the Ritz values computed from the previous step, and the upper bound can be inexpensively obtained by a very small number of (e.g., 4 or 5) Lanczos steps [32]. he main cost of the i ltering at each iteration is in performing the products of the polynomial of the Hamiltonian by the basis vectors; this operation can be simpliied by utilizing recursion relations. To construct a “damped” Chebyshev polynomial on the interval [a, b] to the interval [−1, 1], one can use an ai ne mapping such that

10

0

–10

0

0.5

1 t

1.5

2

FIGURE 3.6 A damped Chebyshev polynomial, C6. he shaded area corresponds to eigenvalue spectrum regime that will be enhanced by the i ltering operation (see text).

he interval is chosen to encompass the energy interval containing the eigen space to be i ltered. he iltering operation can then be expressed as ˆ n } = Cm (l(H)){ψn }. {ψ

(3.13)

his computation is accomplished by exploiting the convenient three-term recursion property of Chebyshev polynomials: C0 (t ) = 1, C1(t ) = t , Cm +1(t ) = 2t Cm (t ) − Cm −1(t )

(3.14)

An example of a damped Chebyshev polynomial as deined by Equations 3.12 and 3.14 is given in Figure 3.6 where we have taken the lower bound as a = 0.2 and the upper bound as b = 2. In this schematic example, the i ltering would enhance the eigenvalue components in the shaded region. he i ltering procedure for the self-consistent cycle is illustrated in Figure 3.7. Unlike traditional methods, the cycle only requires one explicit diagonalization step. Instead of repeating the diagonalization step within the self-consistent loop, a iltering operation is used to create a new basis in which the desired ˆ n}, is formed, eigen subspace is enhanced. Ater the new basis, {ψ the basis is orthogonalized. he orthogonalization step scales as the cube of the number of occupied states and as such this method is not an “order-n” method. However, the prefactor is suiciently small that the method is much faster than previous implementations of real space methods [32]. he cycle is repeated until the “input” and “output” density is unchanged within some speciied tolerance, e.g., the eigenvalues must not change by ∼0.001 eV, or the like. In Table 3.1, we compare the timings using the Chebyshev iltering method along with explicit diagonalization solvers using the TRLan and the ARPACK. hese timings are for a modest-sized nanocrystal: Si525H276. he Hamiltonian size is 292,584 × 292,584 and 1194 eigenvalues were determined. he numerical runs

3-7

Tools for Predicting the Properties of Nanomaterials 3

Select initial potential (e.g., superpose atomic charge densities)

Get initial basis: {ψn} from diagonalization

Speed-up

2.5

2

Find the charge density from the basis:

ρ=

∑

|ψn|2

Si2712H828P

1.5

Si3880H1036P

n,occup

1 Solve for VH and compute Vxc : 2V = −4πρ H

Vxc = Vxc[ρ]

0

1000

2000 3000 Number of processors

4000

FIGURE 3.8 Examples of performance scaling for the real space pseudopotential code.

Δ

Construct Hamiltonian:

3.3 Applications

2 +VP +V +V ion H xc

Δ

H = −1 2

3.3.1 Silicon Nanocrystals 3.3.1.1 Intrinsic Properties Apply Chebyshev filter to the basis:

{ψˆ n} = Cm (l(H)){ψn} FIGURE 3.7 Self-consistent cycle using damped Chebyshev i ltering. Atomic units (e = ћ = m) are used here. TABLE 3.1 Comparison of Computational Timings for Various Methods for a Nanocrystal: Si525H276 Method Filtering ARPACK TRLan

SCF Its

CPU(s)

11 10 10

5,947 62,026 26,853

If we wish to examine the intrinsic properties of nanocrystals, we need to deal with the crystal surface, which at the nanoscale becomes increasingly important. Experimentally, this issue is oten handled by passivating the intrinsic surface with surfactants or hydrogenating the surface. We chose to use the latter approach by capping surface dangling bonds with hydrogen atoms [44]. he largest nanocrystal we examined contained over ten thousand atoms: Si9041H1860, which is approximately 7 nm in diameter [32,45]. A ball and stick model of a typical nanocrystal is shown in Figure 3.9.

Note: While the number of SCF iterations is comparable for all three methods, the total time with iltering methods can be dramatically reduced.

were performed on the SGI Altix 3700 cluster at the Minnesota Supercomputing Institute. he CPU type is a 1.3 GHz Intel Madison processor. Although the number of matrix-vector products and SCF iterations is similar, the total time with iltering is over an order of magnitude faster compared to ARPACK and a factor of better than four versus the TRLan. he scaling of the algorithm with the number of processors is shown in Figure 3.8. Such improved timings are not limited to this particular example. Our focus here is on silicon nanocrystals, our method is not limited to semiconducting or insulating systems, we have also used this method to examine metallic systems such as liquid lead [43] and magnetic systems such as iron clusters [8].

FIGURE 3.9 he ball and stick model of a hydrogenated silicon quantum dot. he interior consists of a diamond fragment. he surface of the fragment is capped with hydrogen atoms.

3-8

Handbook of Nanophysics: Principles and Methods

I = E(N − 1) − E(N ) A = E(N ) − E(N + 1)

(3.15)

In principle, these are ground state properties and, if the correct functional were known, these quantities would be accurately predicted by density functional theory. For atoms and molecules, one typically extracts accurate values for I and A, e.g., for the irst-row atoms, the error is typically less than ∼5%. he diference between the ionization potential and the electron ainity can be associated with the quasi-particle gap: Eqp = I − A. If the exciton (electron–hole) interaction is small, this gap can 1

Density of states (eV –1)

0.8

Si9041H1860

14 IP (ΔSCF)

12

EA (ΔSCF) –EHOMO

10

Energy (eV)

A solution of the Kohn–Sham equations yields the distribution of eigenvalues. For suiciently large nanocrystals, one expects the distribution to approach that of crystalline silicon, i.e., the distribution of states should approach that of the crystalline density of states. he range of sizes for these nanocrystals allows us to make comparisons with the bulk crystal. h is comparison is made in Figure 3.10. he “density of states” (DOS) for the eigenvalue spectrum for the nanocrystal shares similar structure as in the bulk crystal. For example, the sharp peak at about 4 eV below the top of the valence band arises from an M1 critical point along the [110] direction in the bulk [18]. his feature is clearly present in the nanocrystal eigenvalue spectra. he only notable diferences between the crystal and the nanocrystal occur because of the presence of the Si–H bonds and the lack of completely evolved bands. We can also examine the evolution of the ionization potentials (I) and the electron ainities (A) for the nanocrystal.

–ELUMO

8 6 4 2 0 0

2

4 Cluster diameter (nm)

6

8

FIGURE 3.11 he evolution of the ionization potential (IP) and electron ainity (EA) with quantum dot size. Also shown are the eigenvalue levels for the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO).

be compared to the optical gap. However, for silicon nanocrystals the exciton energy is believed to be on the order of ∼1 eV for nanocrystals of less than ∼1 nm [46]. We can examine the scaling of the ionization potential and ai nity by assuming a simple scaling and itting to the calculated values (shown in Figure 3.11): I (D) = I ∞ + A/D α

(3.16)

0.6

A(D) = A∞ + B/D β

0.4

where D is the dot diameter. A it of these quantities results in I∞ = 4.5 eV, A∞ = 3.9 eV, α = 1.1 and β = 1.08. he it gives a quasiparticle gap of E qp(D → ∞) = I∞ − A∞ = 0.6 eV in the limit of an ininitely large dot. his value is in good agreement with the gap found for crystalline silicon using the local density approximation [47,48]. he gap is not in good agreement with experiment owing to the failure of the local density approximation to describe band gaps of bulk semiconductors in general. A key aspect of our study is that we can examine the scaling of the ionization potential and electron ai nity for nanocrystals ranging from silane (SiH4) to systems containing thousands of atoms. We not only verify the limiting value of the quasi-particle gap, we can ascertain how this limit is reached, i.e., how the ionization potential and electron ai nity scale with the size of the dot and what the relationship is between these quantities and the highest occupied and lowest empty energy levels. Since values of I and A from LDA are reasonably accurate for atoms and molecules, one can ask how the size of the nanocrystal afects the accuracy of LDA for predicting I and A. Unfortunately,

0.2 0 0.8

Bulk Si

0.6 0.4 0.2 0 –15

–10

–5

0

Energy (eV)

FIGURE 3.10 he eigenvalue density of states for the Si9041H1860 nanocrystal (top panel) and the electronic density of states for crystalline silicon (bottom panel). he highest occupied state in both panels is taken to be the zero energy reference.

3-9

Tools for Predicting the Properties of Nanomaterials

the vibrational modes, thereby increasing their participation probability in the optical transitions. Owing to the localized nature of nanocrystals, it is feasible to predict vibrational modes calculations by the direct forceconstant method [52]. he dynamical matrix of the system is constructed by displacing all atoms one by one from their equilibrium positions along the Cartesian directions and i nding the forces induced on the other atoms of the nanocrystal. We determine the forces using the Hellmann–Feynman theorem in real space [33] and employ a symmetrized form of the dynamical matrix expression [53]. he elements of the dynamical matrix, Dijαβ, are given by

15 IP (GWf) EA (GWf) IP (ΔSCF) EA (ΔSCF)

10 Energy (eV)

Experiment

5

β β α α 1 ⎡ Fi ({R}+d j ) − Fi ({R} − d j ) Dijαβ = − ⎢ 2 ⎢⎣ 2d βj

0 0

5

10

15

20

+

Cluster diameter (angstroms)

FIGURE 3.12 First ionization potential and electron ai nity of passivated silicon clusters, calculated within the GW approximation [49] solid lines and ΔSCF dotted lines. Experimental data from Ref. [104] SCF results include spin-polarization efects.

experimental values for the ionization potentials and electron ainities are not known for hydrogenated silicon clusters and nanocrystals, a notable exception being silane (where the electron ainity is negative) [49]. However, there is some theoretical evidence that the issue involves errors in the ionization energies as opposed to the electron ainities. In Figure 3.12, we display the ionization potentials and electron ai nities from the GW approximation [49–51] and compare to calculations using the LDA approximation. Within GW, the electron self-energy is obtained by calculating the lowest order diagram in the dynamically screened Coulomb interaction [49]. It is expected that the values for (IP,EA) are more accurately replicated by GW than the LDA work. he LDA and GW values for the EA are nearly identical. However, GW yields slightly larger IP values than LDA. As a function of size, the diference between the IP and GW values is small for the smallest nanocrystals and appears to saturate for the larger ones. Given the energy as a function of position, we can also examine structural and vibrational properties of nanocrystals. Vibrational properties are easier to describe as they converge more rapidly to the bulk values than do electronic states; however, because they involve small changes in energy with position, the wave functions need to be better converged. Vibrational modes in nanocrystals can play an important role within the context of the photovoltaic applications. In particular, vibrational properties are directly related to the phononassisted optical transitions. his is an important consideration for silicon: in the bulk limit, the lowest optical transitions are indirect and must be phonon assisted. It is expected that the vibrational dynamics in the presence of a free carrier will be different from the case of an intrinsic nanocrystal. Strains induced by a free uncompensated carrier might break the symmetry of

Fjβ ({R} + diα ) − Fjβ ({R} − diα ) ⎤ ⎥ 2diα ⎥⎦

(3.17)

where Fjα is the force on atom α in the direction i {R} + d βj is the atomic coniguration where only the atom β is displaced along j from its equilibrium position he value of displacement was chosen to be 0.015 Å. he equilibrium structure was relaxed so that the maximum residual forces were less than 10−3 eV/Å. For this accuracy, the grid spacing h is reduced to 0.4 a.u. (1 a.u. = 0.529 Å) as compared to a value of about 0.7 a.u., typically used for electronic properties. he Chebyshev iltering algorithm is especially well suited for this procedure as the initial diagonalization need not be repeated when the geometry changes are small. he vibrational modes frequencies and corresponding eigenvectors can be obtained from the dynamical equation ⎡

∑ ⎢⎢⎣ω δ β, k

2

δ −

αβ ik

Dikαβ M α Mβ

⎤ ⎥ Akβ = 0 ⎥⎦

(3.18)

where Mα is the mass of atom labeled by α. We apply this procedure to a Si nanocrystal: Si29H36. he surface of this nanocrystal is passivated by hydrogen atoms in order to electronically passivate the nanocrystal, i.e., remove any dangling bond states from the gap [54]. (Si clusters without hydrogen passivation has been examined previously, assuming notable surface reconstructions [55]). he choice of the number of silicon atoms is dictated so that the outermost Si atoms are passivated by no more than two hydrogen atoms. Our nanocrystal has a bulk-like geometry with the central atom having the Td symmetry. he bonding distance to the four equivalent nearest neighbors is 2.31 Å. We also consider cation nanocrystals by removing an electron from the system: (Si29H36)+. A relaxation of this nanocrystal leads to a distortion owing to a Jahn–Teller efect structure, i.e., there is a partial i lling of the highest occupied state. his symmetry breaking leads to the central atom of the charged nanocrystal

3-10

Handbook of Nanophysics: Principles and Methods Surface Si−H modes

No stretching 0.4

VDOS (a.u.)

Positively charged Neutral Si29H36

Core Si−Si vibrations

0.5

Si−H stretching

Scissor bending H−Si−H

0.3

0.2

0.1

0.0

500

1000 1500 Frequency (cm–1)

2000

2500

Vibrational density of states of Si29H36.

being bonded to four atoms with diferent bond lengths. Two bond lengths become slightly shorter (2.30 Å) and two others lengthen (2.35 Å). his distortion propagates throughout the nanocrystal. Vibrational densities of states of the two nanocrystals are shown in Figure 3.13. he DOS for the nanocrystal can be divided into four distinct regions. (Vibration spectra of various silicon clusters were studied in a number of earlier papers [56,57] using model potential calculations [58]). he lowest energy vibrations involve only the Si atoms. We will assign them to “core modes.” In the core modes all Si atoms are involved, while the passivating hydrogens remain static. he lowest frequency modes in this region (below ∼250 cm−1) correspond to modes with no bond stretching, i.e., bond bending modes dominate. For modes above ∼250 cm−1 stretching dynamics become more important. In the Si–Si “stretching–bending” part of the spectrum, the important part is the highest peak right below 500 cm−1. he nature of this nanocrystal peak can be ascribed to modes that are characteristic transverse optical (TO) mode of crystalline silicon. he TO mode is extensively discussed in the literature as it is Raman active. he mode is sensitive to the nanocrystal size [59,60]. he next region of the vibration modes, just above 500 cm−1, is related to the surface vibrations of Si and H atoms. he fourth distinct region is located around 1000 cm−1 and is related to the H atoms scissor-bending modes; the Si atoms do not move in this case. he highest energy vibrations, above 2000 cm−1, are the Si–H stretching modes. he cation nanocrystal, (Si29H36)+, has a similar vibrational spectrum. However, in the charged system we see that hydrogen actively participates in the vibrations well below 500 cm−1 (Figure 3.14). he peak at 500 cm−1 is red shited in the case of the changed system, which is associated with a much larger contribution from the surface atoms. he vibrational DOS spectrum of the hydrogen, shown in Figure 3.14, demonstrates that hydrogen

VDOS

FIGURE 3.13

0

Charged

Neutral 0

500

1000 1500 Frequency (cm–1)

2000

2500

FIGURE 3.14 Vibrational density of states for the hydrogen contributions in Si29H36.

atoms vibrate at frequencies all the way down to 400 cm−1. his is rather unusual, and occurs owing to an enhanced charge transfer on the surface associated with the hole charge. As noted in Ref. [55], the distribution of the hole density afects both lattice relaxations and the corresponding vibrational spectra. In order to quantify the location of the hole charge in the (Si29H36)+ nanocrystal, we calculated the “electron localization function” (ELF) for both neutral and charged structures [61]. Figure 3.15 presents two orientations of the ELF plots. On the let-hand side plots (a) and (c), the neutral nanocrystals is shown; on the right-hand side, plots (b) and (d), the charged nanocrystal is shown. Flat cuts of the ELF at the surface of the charged nanocrystal show where the hole is located.

Tools for Predicting the Properties of Nanomaterials Charged

Neutral

(a)

(c)

[001]

(b)

[001]

[010]

(d)

[010]

FIGURE 3.15 Electron localization function: (a,c) the neutral Si29H36 nanocrystal shown in two orientations; (b,d) the Si 29H361+ cation, also in two orientations.

3.3.1.2 Extrinsic Properties Doping a small percentage of foreign atoms in bulk semiconductors can profoundly change their electronic properties and makes possible the creation of modern electronic devices [62]. Phosphorus-doped crystalline Si introduces defect energy states close to the conduction band. For such shallow donors, electrons can be easily thermally excited, greatly enhancing the conductivity of the original pure semiconductor by orders of magnitude at room temperature. he evolution of the semiconductor industry requires continued miniaturization. he industry is maintaining exponential gains in the performance of electronic circuits by designing devices ever smaller than the previous generation. his device miniaturization is now approaching the nanometer-scale. As a consequence, it is of the utmost importance to understand how doping operates at this length scale as quantum coninement is expected to alter the electronic properties of doped Si nanocrystals [63]. Also, doped Si nanowires have been synthesized and it has been demonstrated experimentally that they can be used as interconnects in electronic circuits or building blocks for semiconductor nanodevices [64,65]. Important questions arise as to whether the defect energy levels are shallow or not, e.g., at what length scale will device construction based on macroscopic laws be altered by quantum coni nement? Phosphorus-doped silicon nanocrystals represent the prototypical system for studying impurities in quantum dots. Recent experiments, designed to study this system, have utilized photoluminescence [66,67] and electron spin resonance measurements

3-11

[68–70]. Electron spin resonance experiments probe the defect energy levels through hyperine interaction. Hyperi ne splitting (HFS) arises from the interaction between the electron spin of the defect level and the spin of the nucleus, which is directly related to the probability of inding a dopant electron localized on the impurity site [71]. A HFS much higher than the bulk value of 42 G has been observed for P-doped Si nanocrystals with radii of 10 nm [68]. A size dependence of the HFS of P atoms was also observed in Si nanocrystals [69,70]. Unfortunately, theoretical studies of shallow impurities in quantum dots are computationally challenging. Owing to the large number of atoms and to the low symmetry of the system involved, most total energy calculations have been limited to studying nanocrystals that are much smaller than the size synthesized in experiment [72–75]. While empirical studies have been performed for impurities in large quantum dots, they oten utilize parameters that are ad hoc extrapolations of bulk-like values [76–78]. he same methods used to examine intrinsic silicon can be used for extrinsic silicon [45]. It is fairly routine to examine P-doped Si nanocrystals up to a diameter of 6 nm, which spans the entire range of experimental measurements [70]. he HFS size dependence is a consequence of strong quantum coni nement, which also leads to the higher binding energy of the dopant electron. Hence, P is not a shallow donor in Si if the nanocrystals are less than 20 nm in diameter. In addition, we ind that there is “critical” nanocrystal size below which the P donor is not stable against migration to the surface. As for intrinsic properties, our calculations are based on density functional theory in the local density approximation [13,14]. However, the grid spacing is chosen to be 0.55 a.u., as a iner grid must be employed to converge the system owing to the presence of the P dopant [10,45]. he geometry of Si nanocrystal is taken to be bulk-like and roughly spherical in shape, in accord with experimental observation [79]. Again, the dangling bonds on the surface of the nanocrystal are passivated by H. he experimentally synthesized Si nanocrystals are usually embedded in an amorphous silicon dioxide matrix. he Si/SiO2 interface is in general not the same as H passivation. Nevertheless, both serve the role of satisfying the dangling bonds on the surface. he Si nanocrystals are then doped with one P atom, which substitutes a Si atom in the nanocrystal. In Figure 3.16a, the defect state charge density along the [100] direction is illustrated. As the nanocrystal size increases, the defect wave function becomes more delocalized. his role of quantum coni nement is observed in both experiments [70] and theoretical calculations [72,80]. he maxima of the charge density at around 0.2 nm correspond to the bond length between the P at the origin and its irst Si neighbors. We can smooth out these atomic details by spherically averaging the defect wave function as shown in Figure 3.16b. We ind that the defect wave function decays exponentially from the origin. his corresponds very well to the conventional understanding of defects in semiconductors: the defect ion and the defect electron form a hydrogen-like system with the wave function described as ψ ∼ exp( −r /aBeff ).

3-12

Handbook of Nanophysics: Principles and Methods 40 Si34H36P Si146H100P Si238H196P

∫|ψ(r)|2 dΩ

|ψ(x)|2 (nm–3)

30 20 10 0 –1.2

–0.8

–0.4

(a)

0 0.4 x (nm)

0.8

0

1.2

2

0.8

600 500 HFS (G)

aBef (nm)

0.5 0.4 0.3 0.1

(c)

10

400 300 200

0.2 0

8

6

Unrelax Relaxed Expt[70]

0.7 0.6

4 r (A)

(b)

100 0

0.5

1

2 1.5 Radius (nm)

2.5

3

0.5 (d)

1

2 1.5 Radius (nm)

2.5

3

FIGURE 3.16 (a) Charge density for the dopant electron along the [100] direction for three P-doped Si nanocrystals with diferent radius. x is the coordinate along that direction. (b) he corresponding spherically averaged charge densities. (c) he efective Bohr radius aBeff corresponding to the dopant electron as a function of nanocrystal radius. (d) he calculated HFS of P-doped Si nanocrystals as a function of nanocrystal radius together with experimental data (▲) from Ref. [70]. heoretical values for both the unrelaxed bulk geometries ( ) and the fully relaxed structures (♦) are shown.

•

From the decay of the defect wave function, we can obtain an efective Bohr radius aBeff and its dependence on nanocrystal size as plotted in Figure 3.16c. We ind that the efective Bohr radius varies nearly linearly with nanocrystal radius R up to 3 nm where R is approximately ive times aBeff . Nonlinearity can be observed for very small Si nanocrystals, and aBeff appears to converge to ∼0.2 nm as R → 0. he limit trends to the size of a phosphorus atom while retaining its sp3 hybridization. In the bulk limit, aBeff is ∼2.3 nm assuming a dielectric constant of 11.4 and efective electron mass of 0.26 me. he dependence on R should trend to this bulk limit when the diameter of the nanocrystal is suiciently large. From the defect wave functions, we can evaluate the isotropic HFS as well [81,82]. Our calculated HFS is plotted in Figure 3.16d for a P atom located at the center of Si nanocrystal. here is very good agreement between experimental data [70] and our theoretical calculations. For nanocrystals with radius between 2–3 nm, the HFS is around 100 G, which considerably exceeds the bulk value of 42 G. Moreover, the HFS continues to increase as the nanocrystal size decreases. his is a consequence of the quantum coninement as illustrated in Figure 3.16a and b. he defect wave function becomes more localized at the P site as the radius decreases, leading to higher amplitude of the wave function at the P core. Only Si nanocrystals containing less than

1500 Si atoms are structurally optimized to a local energy minimum. For Si nanocrystals with radius larger than 1.5 nm, the efect of relaxation diminishes and the diference between unrelaxed and relaxed results is within ∼10%. he experimental methodology used to measure the HFS ensures that only nanocrystals with exactly one impurity atom are probed. However, experiment has no control over the location of the impurity within the nanocrystal. he spatial distribution of impurities cannot be inferred from experimental data alone. herefore, we considered the energetics of the doped nanocrystal by varying the P position along the [100] direction as illustrated in Figure 3.17. We avoid substituting the Si atoms on the surface of the nanocrystal by P. Our results for ive of the small nanocrystals ater relaxation to local energy minimum are shown in Figure 3.17. For Si nanocrystals with a diameter smaller than ∼2 nm, P tends to substitute Si near the surface. Otherwise, there is a bistable behavior in which both the center and the surface of the nanocrystal are energetically stable positions. his suggests that a “critical size” exists for nanocrystals. Below this size, P atoms will always be energetically expelled toward the surface. We also calculated the binding energy EB of the defect electron as the P position changes. he binding energy is a measure of how strongly the defect electron interacts with the P atom, and

3-13

Tools for Predicting the Properties of Nanomaterials Energy (eV)

0.2 Si146H100P

HFS (G) 500

0 250

−0.2 2 1

Si86H76P

−0.4 3 4

0.2

5

0

1

2

3

4 0

1

2

3

4

0 500

0 0

250

Si122H100P

−0.2 −0.4

0 500

0.2 0

250

Si146H100P

−0.2 −0.4 Energy (eV) 0.2

0

HFS (G)

Si70H84P

−0.4 0

1

2

3

4

5 0

1

2

3

4

5

0 500

0 250

−0.2

2

0.2

500

0

1

0 3 0 P position

−0.2

250

Si238H196P

−0.4 1

2

0

3 P position

FIGURE 3.17 Diference in energy and HFS as the P atom moves away from the center of the Si nanocrystal. he energies are with respect to the energy of the Si nanocrystal with P at the center. he x-axis measures the distance of P atom away from the origin in the unit of Si bond length as illustrated in the perspective view of a Si nanocrystal.

is calculated by the energy required to ionize a P-doped Si nanocrystal by removing an electron (Id) minus the energy gained by adding the electron to a pure Si nanocrystal (Ap). Figure 3.18a illustrates the typical situation for Si nanocrystals larger than 2 nm in diameter: the binding energy tends to decrease as the P moves toward the surface. h is decrease occurs because the defect wave function becomes more distorted and less localized around P, leading to a loss in the Coulomb energy between the P ion and the defect electron. he change in the defect wave function explains why the center of the nanocrystal is energetically favorable. However, since the doped nanocrystal can relieve its stress by expelling the P atom toward the surface where there is more room for relaxation, positions close to the surface are always locally stable as depicted in Figure 3.17. he binding energy and P-induced stress compete with each other in determining the defect position within the Si nanocrystal. For Si nanocrystals less than 2 nm in diameter, the binding energy is higher close to the surface of the Si nanocrystal as shown in Figure 3.18b and c. A comparison of the binding energy between relaxed and unrelaxed structures suggests that the reversal in the trend is caused by relaxation. From Figure 3.18e, the P atom is found to relax toward the center of the nanocrystal, leading to a more localized defect wave function as in

Figure 3.18d with better coni nement inside the nanocrystal, and therefore higher binding energy. he relaxation of P atom toward the center of the nanocrystal causes an expansion of the Si nanocrystal in the perpendicular direction creating strain throughout the nanocrystal. his trade of between the binding energy and stress is only feasible for small Si nanocrystals as depicted in Figure 3.18f. As the diameter of the Si nanocrystal increases, the relaxation trends to a bulk-like geometry. his interplay between the binding energy and stress for small Si nanocrystals stabilizes the P atom close to the surface of the nanocrystal. he HFS evaluated for diferent P positions inside the Si nanocrystal is also shown in Figure 3.17. here is a general trend for the HFS to drop drastically as the P atom approaches the surface of the nanocrystal. Smaller variations in the HFS are found for P positions away from the surface. However, for a large Si nanocrystal, the HFS varies within ∼10% of the value with P at the center position. From studies of the energetics and comparison to the experimental results in Figure 3.16d, it is possible for the synthesized Si nanocrystals to have P located close to the center of the nanocrystals. An analysis of the defect wave function in Figure 3.16 can be itted to an efective mass model [45]. Motivated by the defect wave functions having an approximate form of exp(−r/aB), we consider

3-14

Handbook of Nanophysics: Principles and Methods 2.6

2

2.55

1.9

EB (eV)

EB (eV)

2.5 1.8 Si146H100P 1.7

2.4 Relaxed Unrelaxed

1.6 1.5

2.45

0

1

2 3 P position

(a)

Si70H84P

2.35

4

2.3

5

0

1

2

3

P position

(b) 0.1

2.35

0.08 |ψ(x)|2 (A–3)

EB (eV)

2.3 2.25 2.2

0.06 0.04 0.02

2.15 2.1

Relaxed Unrelaxed

0

1

(c)

2 P position

3

0

4

–9

–6

–3

(d)

0 x (A)

3

6

9

140

Si86H76P

Relaxed Bulk

α

α (degrees)

130

120

110

(e)

(f )

Si70

Si86

Si122

Si146

Si238

FIGURE 3.18 (a–c) Changes in binding energy as the P atom moves away from the center of three Si nanocrystals with diferent sizes. he same x-axis is used as in Figure 3.17. (d) he charge density of the dopant electron along the [100] direction (x direction) for the Si86H76P cluster with the P atom located close to the surface as illustrated in (e). (f) A plot of the angle subtended by the P atom located close to the surface for ive diferent Si nanocrystals. Only the number of Si atoms is used to label the x-axis for clarity. he solid line represents the results ater relaxation, while the dashed line corresponds to unrelaxed bulk-like geometries in the igure.

a hydrogen-like atom in a “dielectric box.” he potential that the electron experiences in atomic units is V (r ) =

−1 −1 + V0 for r ≤ R; V (r ) = ε(R)r ε(R)r

where R is the radius of the well V0 the well depth

for r > R (3.19)

he dielectric constant ε(R) depends on nanocrystal size [45] and is assumed to follow Penn’s model ε(R) = 1 + ((11.4 − 1) / (1 + (α /R)n)) [83]. he dielectric constant converges to 11.4 in the bulk limit. α and n will be used as itting parameters. An approximate solution is obtained to the Schrodinger equation for the defect electron with an efective mass m* = 0.26 me under this potential by using a trial wave function ψ = π /aB3 exp( −r /aB ) . By applying the variational principle, the energy can be minimized with

3-15

Tools for Predicting the Properties of Nanomaterials 5 2

Energy (eV)

Energy (eV)

4

3

2

1 (a)

Ionization energy (P-Si nc) Electron affinity (Si nc) 0.8

1.2

2 1.6 Radius (nm)

2.4

0 Ab-initio EB Eff. mass theory KE PECoulomb PEQW

–2

–4 2.8

10

20 15 Radius (A)

(b)

25

30

0

Energy (eV)

–0.5

–1

–1.5 Potential well V0 –2

10

15

(c)

20

25

30

Radius (A)

FIGURE 3.19 (a) he ionization energy of P-doped Si nanocrystal (▼) and the electron ainity of pure Si nanocrystal (▲) plotted as a function of nanocrystal radius. (b) he calculated binding energy EB using efective mass theory plotted together with our ab initio results. From efective mass theory, the binding energy has contributions from the kinetic energy (KE), the Coulomb interaction between the dopant ion and its electron (PECoulomb), and the potential energy (PEQW) due to the quantum well. (c) he potential well depth V0 as a function of nanocrystal radius from efective mass theory based on a hydrogen atom in a box.

respect to the efective Bohr radius aB. Hence, aB can be found as a function of the well depth V0 and radius R. Alternatively, V0 can be inferred since we know aB from our irst-principles results. In fact, the energy calculated from this model corresponds to the binding energy EB of the dopant electron. herefore, we can it the α and n parameters in Penn’s model by calculating the binding energy. Our calculated size dependence of the binding energy (EB = Id − Ap as deined above) is plotted in Figure 3.19a and b. A detailed explanation of the trend can be found in Refs. [45,72]. Figure 3.19 illustrates the results from the fitting to the effective mass model. By using α = 5.4 nm and n = 1.6, we ind that our model can reproduce almost exactly the binding energies from the irst-principles calculations. he binding energy EB scales as R−1.1 where R the nanocrystal radius. For nanocrystals up to 6 nm in diameter, the binding energy is signiicantly larger than kBT at room temperature. An extrapolation of our results shows that a nanocrystal diameter of at least 20 nm is needed in order for P to be a shallow donor. Interestingly, the depth of the potential well V0 depends on the nanocrystal radius R rather than being ininite or a constant. he inite V0 explains why the dependence of HFS on R scales with an exponent smaller than three, which is a consequence of an ininitely deep quantum well

[84,85]. he well represents the efect of quantum coninement on the wave function, which for very large nanocrystals diminishes, corresponding to a vanishing quantum well in the bulk limit. As the nanocrystal size decreases, the quantum well becomes deeper such that it can conine the defect electron more efectively as its kinetic energy increases.

3.3.2 Iron Nanocrystals he existence of spontaneous magnetization in metallic systems is an intriguing problem because of the extensive technological applications of magnetic phenomena and an incomplete theory of its fundamental mechanisms. In this scenario, clusters of metallic atoms serve as a bridge between the atomic limit and the bulk, and can form a basis for understanding the emergence of magnetization as a function of size. Several phenomena such as ferromagnetism, metallic behavior, and ferroelectricity have been intensely explored in bulk metals, but the way they manifest themselves in clusters is an open topic of debate. At the atomic level, ferromagnetism is associated with partially illed 3d orbitals. In solids, ferromagnetism may be understood in terms of the itinerant electron model [86], which assumes a partial

3-16

delocalization of the 3d orbitals. In clusters of iron atoms, delocalization is weaker owing to the presence of a surface, whose shape afects the magnetic properties of the cluster. Because of their small size, iron clusters containing a few tens to hundreds of atoms are superparamagnetic: he entire cluster serves as a single magnetic domain, with no internal grain boundaries [87]. Consequently, these clusters have strong magnetic moments, but exhibit no hysteresis. he magnetic moment of nano-sized clusters has been measured as a function of temperature and size [88–90], and several aspects of the experiment have not been fully clariied, despite the intense work on the subject [91–96]. One intriguing experimental observation is that the speciic heat of such clusters is lower than the Dulong–Petit value, which may be due to a magnetic phase transition [89]. In addition, the magnetic moment per atom does not decay monotonically as a function of the number of atoms and for i xed temperature. Possible explanations for this behavior are structural phase transitions, a strong dependence of magnetization with the shape of the cluster, or coupling with vibrational modes [89]. One diiculty is that the structure of such clusters is not well known. First-principles and model calculations have shown that clusters with up to 10 or 20 atoms assume a variety of exotic shapes in their lowest-energy coniguration [97,98]. For larger clusters, there is indication for a stable body-centered cubic (BCC) structure, which is identical to ferromagnetic bulk iron [91]. he evolution of magnetic moment as a function of cluster size has attracted considerable attention from researchers in the ield [88–98]. A key question to be resolved is: What drives the suppression of magnetic moment as clusters grow in size? In the iron atom, the permanent magnetic moment arises from exchange splitting: the 3d↑ orbitals (majority spin) are low in energy and completely occupied with ive electrons, while the 3d↓ orbitals (minority spin) are partially occupied with one electron, resulting in a magnetic moment of 4 μB, μB being the Bohr magneton. When atoms are assembled in a crystal, atomic orbitals hybridize and form energy bands: 4s orbitals create a wide band that remains partially i lled, in contrast with the completely i lled 4s orbital in the atom; while the 3d↓ and 3d↑ orbitals create narrower bands. Orbital hybridization together with the diferent bandwidths of the various 3d and 4s bands result in weaker magnetization, equivalent to 2.2 μB/atom in bulk iron. In atomic clusters, orbital hybridization is not as strong because atoms on the surface of the cluster have fewer neighbors. he strength of hybridization can be quantiied by the efective coordination number. A theoretical analysis of magnetization in clusters and thin slabs indicates that the dependence of the magnetic moment with the efective coordination number is approximately linear [93,95,96]. But the suppression of magnetic moment from orbital hybridization is not isotropic [99]. If we consider a layer of atoms for instance, the 3d orbitals oriented in the plane of atoms will hybridize more efectively than orbitals oriented normal to the plane. As a consequence, clusters with faceted surfaces are expected to have magnetic properties diferent from clusters with irregular surfaces, even

Handbook of Nanophysics: Principles and Methods

if they have the same efective coordination number [99]. his efect is likely responsible for a nonmonotonic suppression of magnetic moment as a function of cluster size. In order to analyze the role of surface faceting more deeply, we have performed irst-principles calculations of the magnetic moment of iron clusters with various geometries and with sizes ranging from 20 to 400 atoms. he Kohn–Sham equation can be applied to this problem using a spin-density functional. We used the generalized gradient approximation (GGA) [100] and the computational details are as outlined elsewhere [8,24,31,101]. Obtaining an accurate description of the electronic and magnetic structures of iron clusters is more diicult than for simple metal clusters. Of course, the existence of a magnetic moment means an additional degree of freedom enters the problem. In principle, we could consider non-collinear magnetism and associate a magnetic vector at every point in space. Here we assume a collinear description owing to the high symmetry of the clusters considered. In either case, we need to consider a much larger coniguration space for the electronic degrees of freedom. Another issue is the relatively localized nature of the 3d electronic states. For a real space approach, to obtain a fully converged solution, we need to employ a much iner grid spacing than for simple metals, typically 0.3 a.u. In contrast, for silicon one might use a spacing of 0.7 a.u. his iner grid required for iron results in a much larger Hamiltonian matrix and a corresponding increase in the computational load. As a consequence, while we can consider nanocrystals of silicon with over 10,000 atoms, nanocrystals of iron of this size are problematic. he geometry of the iron clusters introduces a number of degrees of freedom. It is not currently possible to determine the deinitive ground state for systems with dozens of atoms as myriads of clusters can exist with nearly degenerate energies. However, in most cases, it is not necessary to know the ground state. We are more interested in determining what structures are “reasonable” and representative of the observed ensemble, i.e., if two structures are within a few meV, these structures are not distinguishable. We considered topologically distinct clusters, e.g., clusters of both icosahedral and BCC symmetry were explored in our work. In order to investigate the role of surface faceting, we constructed clusters with faceted and non-faceted surfaces. Faceted clusters are constructed by adding successive atomic layers around a nucleation point. Small faceted icosahedral clusters exist with sizes 13, 55, 147, and 309. Faceted BCC clusters are constructed with BCC local coordination and, diferently from icosahedral ones, they do not need to be centered on an atom site. We consider two families of cubic clusters: atom-centered or bridge-centered, respectively for clusters with nucleation point at an atom site or on the bridge between two neighboring atoms. he lattice parameter is equal to the bulk value, 2.87 Å. Nonfaceted clusters are built by adding shells of atoms around a nucleation point so that their distance to the nucleation point is less than a speciied value. As a result, non-faceted clusters usually have narrow steps over otherwise planar surfaces and the overall shape is almost spherical. By construction, non-faceted

3-17

Tools for Predicting the Properties of Nanomaterials

2 1 0 1 2

Minority spin –8

(a)

1 0 1 Minority spin

2 –4 Energy – EFermi (eV)

0

Fe393

Majority spin Density of states (eV–1)

Density of states (eV–1)

2

Fe388

Majority spin

–8

4 (b)

–4 Energy – EFermi (eV)

0

4

FIGURE 3.20 Density of states in the clusters Fe388 (a) and Fe393 (b), majority spin (upper panel), and minority spin(lower panel). For reference, the density of states in bulk iron is shown in dashed lines. he Fermi energy is chosen as energy reference.

M=

μB 1 ⎡g ⎤ ⎡ g s Sz + Lz ⎤ = μ B ⎢ s (n↑ − n↓ ) + Lz ⎥ ⎦ ℏ ⎣ 2 ℏ ⎣ ⎦

(3.20)

where gs = 2 is the electron gyromagnetic ratio. Figure 3.21 illustrates the approximately linear dependence between the magnetic moment and the spin moment, , throughout the whole size range. his results in an efective gyromagnetic ratio gef = 2.04 μB/ћ, which is somewhat smaller than the gyromagnetic ratio in bulk BCC iron, 2.09 μB/ћ. his is probably due to an underestimation in the orbital contribution, . In the absence of an external magnetic ield, orbital magnetization arises from the spin-orbit interaction, which is included in the theory as a model potential, Vso = −ξL ⋅ S where ξ = 80 meV/ћ2 [93].

(3.21)

3 Magnetic moment (μB/atom)

clusters have well-deined point-group symmetries: Ih or Th for the icosahedral family, Oh for the atom-centered family, and D4h for the bridge-centered family. Clusters constructed in that manner show low tension on the surface, making surface reconstruction less likely. As clusters grow in size, their properties approach the properties of bulk iron. Figure 3.20a shows the DOS for Fe388, with local BCC coordination. At this size range, the DOS assumes a shape typical of bulk iron, with a three-fold partition of the 3d bands. In addition, the cohesive energy of this cluster is only 77 meV lower than in bulk. his evidence suggests that interesting size efects will be predominantly observed in clusters smaller than Fe388. Figure 3.20b shows the DOS for Fe393, which belongs to the icosahedral family. his cluster has a very smooth DOS, with not much structure compared to Fe388 and bulk BCC iron. his is due to the icosahedral-like arrangement of atoms in Fe393. he overall dispersion of the 3d peak (4 eV for 3d↑ and 6 eV for 3d↓) is nevertheless similar in all the calculated DOS. he magnetic moment is calculated as the expectation value of the total angular momentum:

2.8

Atom centered Bridge centered 2.6

1.3

1.4 Spin moment (ћ/atom)

1.5

FIGURE 3.21 Magnetic moment versus spin moment calculated for the atom-centered BCC (“plus” signs) and bridge-centered BCC (crosses) iron clusters. he approximate ratio is M/ = gef = 2.04 μB/ћ.

Figure 3.22 shows the magnetic moment of several clusters belonging to the three families studied: atom-centered BCC (top panel), bridge-centered BCC (middle panel), and icosahedral (bottom panel). Experimental data obtained by Billas and collaborators [88] are also shown. he suppression of magnetic moment as a function of size is readily observed. Also, clusters with faceted surfaces are predicted to have magnetic moments lower than other clusters with similar sizes. his is attributed to the more efective hybridization of d orbitals along the plane of the facets. he non-monotonic behavior of the measured magnetic moment with size cluster can be attributed to the shape of the surface. Under this assumption, islands of low magnetic moment (observed at sizes 45, 85, and 188) are associated to clusters with faceted surfaces. In the icosahedral family, the islands of low magnetic moment are located around faceted clusters containing 55, 147, and 309 atoms. he irst island is displaced by 10 units from the measured location. For the atom-centered and bridge-centered families, we found islands at (65, 175) and (92, 173) respectively, as indicated in Figure 3.22a and b. he irst

Handbook of Nanophysics: Principles and Methods

Atom-centered clusters

3.2

2.8

2.4

0

100 200 300 Cluster size (number of atoms)

Magnetic moment (μB/atom)

(a)

Magnetic moment (μB/atom)

Magnetic moment (μB/atom)

3-18

2.8

2.4

0

400

100

200

300

400

Cluster size (number of atoms)

(b)

Icosahedral clusters

3.2

2.8

2.4

0 (c)

Bridge-centered clusters

3.2

100

200

300

400

Cluster size (number of atoms)

FIGURE 3.22 Calculated magnetic moments for clusters in the atom-centered (“plus” signs, a), bridge-centered (crosses, b), and icosahedral (triangles, c) families. Experimental data [88] is shown in black diamonds with error bars. Some of the faceted and non-faceted clusters are depicted next to their corresponding data points. he dashed lines indicate the value of magnetic moment per atom in bulk iron.

two islands are also close to the measured islands at 85 and 188. Clearly, there is no exact superposition in the location of calculated islands and measured islands. he magnetic moment was measured in clusters at 120 K [88,90]. At that temperature, vibrational modes or the occurrence of metastable conigurations can shit the islands of low magnetic moment or make them more dif use. Assuming that the non-monotonic decay of magnetic moment is dictated by the cluster shape, we also conclude that clusters with local structures diferent from the ones we discuss here (such as cobalt clusters with hexagonal-close packed coordination, or nickel clusters with face-centered cubic coordination) should have islands of low magnetic moment located at diferent “magic numbers,” according to the local atomic coordination.

3.4 Conclusions Here we reviewed tools for describing the electronic and vibrational properties of nanocrystals. he algorithm illustrated in this chapter replaces explicit eigenvalue calculations by an approximation of the wanted invariant subspace, obtained with the use of Chebyshev polynomial i lters [32]. In this approach, only the initial self-consistent-ield iteration requires solving an eigenvalue problem in order to provide a good initial subspace. In the remaining iterations, no iterative eigensolvers are involved. Instead, Chebyshev polynomials are used to rei ne the subspace. he subspace iteration at each step is easily one or more orders of magnitude faster than solving a corresponding eigenproblem

by the most eicient eigen-algorithms. Moreover, the subspace iteration reaches self-consistency within roughly the same number of steps as an eigensolver-based approach. We illustrated this algorithm by applying it to hydrogenated silicon nanocrystals for both electronic and vibrational modes. he largest dot we examined contained over 10,000 atoms and was ∼7 nm (Si9041H1860) in diameter. We examined the evolution of the electronic properties in these nanocrystals, which we found to assume a bulk-like coniguration for dots larger than ∼5 nm. In addition, we obtained scaling relations for the ionization potential, the electron ainity, and the quasi-particle gap over the size regime of interest. We found the quasi-particle gap to approach the known bulk limit within density functional theory and suggested the remaining errors in the bulk limit occurred in the ionization potential. We did a similar calculation for vibrational modes, although the size of the nanocrystals is not as large, owing to computational issues, i.e., the need for more accurate forces, and that the vibrational modes converge to the bulk values more rapidly than the electronic states. We also examined the role of a residual charge on the vibrational modes. We also examined the role of doping and the behavior of defect wave functions in P-doped Si nanocrystals with a diameter up to 6 nm by irst-principles calculations. Our calculated HFS has very good agreement with experimental data. We found that the defect wave function has a functional form similar to the hydrogen 1s orbital. A model calculation of a hydrogen atom in a quantum well can be used to describe the defect electron.

Tools for Predicting the Properties of Nanomaterials

In addition, our study on the energetics of P location in the Si nanocrystals indicates that the P atom will be expelled toward the surface of the nanocrystal with diameter below a critical value of ∼2 nm. he computational tools we outlined in this chapter are not restricted to insulating materials as is oten done in computational methods targeted at large systems [102]. he iltering method we employ can equally well be applied to metallic systems and we have done so for liquid Pb [43] and for iron nanocrystals [8]. We reviewed our results for the nanocrystals of iron by examining the evolution of the magnetic moment in iron clusters containing 20 to 400 atoms using our real space pseudopotential method with damped Chebyshev iltering. hree families of clusters were studied. hey were characterized by the arrangement of atoms: icosahedral, BCC centered on an atom site, and BCC centered on the bridge between two neighboring atoms. We found an overall decrease of magnetic moment as the clusters grow in size toward the bulk limit. Clusters with faceted surfaces are predicted to have magnetic moment lower than other clusters with similar size. As a result, the magnetic moments is observed to decrease as a function of size in a nonmonotonic manner, which explains measurements performed at low temperature. he utility of this numerical approach should be widely applied to a variety of problems at the nanoscale. he method is suiciently powerful that it can be applied to systems suiciently large that the entire nano-regime can be examined from an isolated atom to a bulk crystal. Moreover, the method has recently been extended to include systems with partial periodicity, e.g., nanowires where the system is periodic along the axis of the nanowire [35,103].

Acknowledgments his work was supported in part by the National Science Foundation under DMR-0551195 and by the U.S. Department of Energy under DE-FG02-06ER46286 and DE-FG02-06ER15760. Computational support is acknowledged from the Texas Advanced Computing Center (TACC) and the DOE National Energy Research Scientiic Computing Center (NERSC).

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39. A. Stathopoulos, S. Öğüt, Y. Saad, J. Chelikowsky, and H. Kim, Comput. Sci. Eng. 2, 19 (2000). 40. C. Bekas, Y. Saad, M. L. Tiago, and J. R. Chelikowsky, Comp. Phys. Commun. 171, 175 (2005). 41. R. Lehoucq, D. C. Sorensen, and C. Yang, ARPACK Users’ Guide: Solution of Large Scale Eigenvalue Problems by Implicitly Restarted Arnoldi Methods (SIAM, Philadelphia, PA, 1998). 42. K. Wu, A. Canning, H. D. Simon, and L.-W. Wang, J. Comp. Phys. 154, 156 (1999). 43. M. M. G. Alemany, R. C. Longo, L. J. Gallego, D. J. González, L. E. González, M. L. Tiago, and J. R. Chelikowsky, Phys. Rev. B 76, 214203 (2007). 44. S. Furukawa and T. Miyasato, Phys. Rev. B 38, 5726 (1988). 45. T.-L. Chan, M. L. Tiago, E. Kaxiras, and J. R. Chelikowsky, Nano Lett. 8, 596 (2008). 46. S. Ogut, J. R. Chelikowsky, and S. G. Louie, Phys. Rev. Lett. 79, 1770 (1997). 47. J. P. Perdew and M. Levy, Phys. Rev. Lett. 51, 1884 (1983). 48. L. J. Sham and M. Schlüter, Phys. Rev. Lett. 51, 1888 (1983). 49. M. L. Tiago and J. R. Chelikowsky, Phys. Rev. B 73, 205334 (2006). 50. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34, 5390 (1986). 51. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 35, 5585 (1987). 52. K. Parlinski, Z. Q. Li, and Y. Kawazoe, Phys. Rev. Lett. 78, 4063 (1997). 53. A. V. Postnikov, O. Pages, and J. Hugel, Phys. Rev. B 71, 115206 (2005). 54. X. Huang, E. Lindgren, and J. R. Chelikowsky, Phys. Rev. B 71, 165328 (2005). 55. J. Song, S. E. Ulloa, and D. A. Drabold, Phys. Rev. B 53, 8042 (1996). 56. X. Jing, N. Troullier, J. R. Chelikowsky, K. Wu, and Y. Saad, Solid State Commun. 96, 231 (1995). 57. M. R. Pederson, K. Jackson, D. V. Porezag, Z. Hajnal, and T. Frauenheim, Phys. Rev. B 65, 2863 (1996). 58. A. Valentin, J. Sée, S. Galdin-Retailleau, and P. Dollfus, J. Phys. 92, 1 (2007). 59. C. Meier, S. Lüttjohann, V. G. Kravets, H. Nienhaus, A. Lorke, and H. Wiggers, Physica E 32, 155 (2006). 60. X .-S. Zhao, Y.-R. Ge, and X. Zhao, J. Mater. Sci. 33, 4267 (1998). 61. B. Silvi and A. Savin, Nature 371, 683 (1994). 62. B. G. Streetman and S. Banerjee, Solid State Electronic Devices, 5th edn. (Prentice Hall, Englewood Clifs, NJ, 2000). 63. A. D. Yofe, Adv. Phys. 50, 1 (2001). 64. Y. Cui and C. M. Lieber, Science 291, 851 (2001). 65. D. Appell, Nature 419, 553 (2002). 66. A. Mimura, M. Fujii, S. Hayashi, D. Kovalev, and F. Koch, Phys. Rev. B 62, 12625 (2000). 67. G. Mauckner, W. Rebitzer, K. honke, and R. Sauer, Physica Status Solidi (b) 215, 871 (1999). 68. J. Müller, F. Finger, R. Carius, and H. Wagner, Phys. Rev. B 60, 11666 (1999).

Handbook of Nanophysics: Principles and Methods

69. B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, and P. F. A. Alkemade, Phys. Rev. B 64, 115308 (2001). 70. M. Fujii, A. Mimura, S. Hayashhi, Y. Yamamoto, and K. Murakami, Phys. Rev. Lett. 89, 206805 (2002). 71. G. Feher, Phys. Rev. 114, 1219 (1959). 72. D. Melnikov and J. R. Chelikowsky, Phys. Rev. Lett. 92, 046802 (2004). 73. Z. Zhou, M. L. Steigerwald, R. A. Friesner, L. Brus, and M. S. Hybertsen, Phys. Rev. B 71, 245308 (2005). 74. G. Cantele, E. Degoli, E. Luppi, R. Magri, D. Ninno, G. Iadonisi, and S. Ossicini, Phys. Rev. B 72, 113303 (2005). 75. S. Ossicini, E. Degoli, F. Iori, E. Luppi, R. Magri, G. Cantele, F. Trani, and D. Ninno, Appl. Phys. Lett. 87, 173120 (2005). 76. C. Y. Fong, H. Zhong, B. M. Klein, and J. S. Nelson, Phys. Rev. B 49, 7466 (1994). 77. I. H. Lee, K. H. Ahn, Y. H. Kim, R. M. Martin, and J. P. Leburton, Phys. Rev. B 60, 13720 (1999). 78. M. Lannoo, C. Delerue, and G. Allan, Phys. Rev. Lett. 74, 3415 (1995). 79. M. Fujii, K. Toshikiyo, Y. Takase, Y. Yamaguchi, and S. Hayashi, J. Appl. Phys. 94, 1990 (2003). 80. G. Allan, C. Delerue, M. Lannoo, and E. Martin, Phys. Rev. B 52, 11982 (1995). 81. J. A. Weil and J. R. Bolton, Electron Paramagnetic Resonance: Elementary heory and Practical Applications, 2nd edn. (Wiley, Hoboken NJ, 2007). 82. C. G. V. de Walle and P. E. Blöchl, Phys. Rev. B 47, 4244 (1993). 83. D. R. Penn, Phys. Rev. B 128, 2093 (1962). 84. L. E. Brus, J. Chem. Phys. 79, 4403 (1983). 85. L. E. Brus, J. Chem. Phys. 79, 5566 (1983). 86. D. Mattis, he heory of Magnetism, 2nd edn. (SpringerVerlag, Berlin, Germany, 1988). 87. C. Bean and J. Livingston, J. Appl. Phys. 30, 120s (1959). 88. I. Billas, J. Becker, A. Châtelain, and W. de Heer, Phys. Rev. Lett. 71, 4067 (1993). 89. D. Gerion, A. Hirt, I. Billas, A. Châtelain, and W. de Heer, Phys. Rev. B 62, 7491 (2000). 90. I. Billas, A. Châtelain, and W. de Heer, Science 265, 1682 (1994). 91. J. Franco, A. Vega, and F. Aguilera-Granja, Phys. Rev. B 60, 434 (1999). 92. A. Postnikov and P. Entel, Phase Transitions 77, 149 (2004). 93. O. Šipr, M. Košuth, and H. Ebert, Phys. Rev. B 70, 174423 (2004). 94. A. Postnikov, P. Entel, and J. Soler, Eur. Phys. J. D 25, 261 (2003). 95. R. Félix-Medina, J. Dorantes-Dávila, and G. Pastor, Phys. Rev. B 67, 094430 (2003). 96. K. Edmonds, C. Binns, S. Baker, S. Thornton, C. Norris, J. Goedkoop, M. Finazzi, and N. Brookes, Phys. Rev. B 60, 472 (1999). 97. G. Pastor, J. Dorantes-Dávila, and K. Bennemann, Phys. Rev. B 40, 7642 (1989).

Tools for Predicting the Properties of Nanomaterials

98. O. Diéguez, M. Alemany, C. Rey, P. Ordejón, and L. Gallego, Phys. Rev. B 63, 205407 (2001). 99. P. Bruno, in Magnetismus von Festkörpern und grenzlächen, edited by P. Dederichs, P. Grünberg, and W. Zinn (IFFFerienkurs, Forschungszentrum Jülich, Germany, 1993), pp. 24.1–24.27. 100. J. P. Perdew, K. Burke, and Y. Wang, Phys. Rev. B 54, 16533 (1996).

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101. J. R. Chelikowsky, N. Troullier, K. Wu, and Y. Saad, Phys. Rev. B 50, 11355 (1994). 102. M. J. Gillan, D. R. Bower, A. S. Torralba, and T. Miyazaki, Comp. Phys. Commun. 177, 14 (2007). 103. J. Han, M. L. Tiago, T.-L. Chan, and J. R. Chelikowsky, J. Chem. Phys. 129, 144109 (2008). 104. U. Itoh, Y. Toyoshima, H. Onuki, N. Washida, and T. Ibuki, J. Chem. Phys. 85, 4867 (1986).

4 Design of Nanomaterials by Computer Simulations 4.1

Introduction .............................................................................................................................4-1 Interplay between heory and Experiments: A Necessity at the Nanoscale • Quantum Mechanical Calculations: A Need for Predictive Simulations

4.2

Small Is Diferent: he Unfolding of Surprises ...................................................................4-2

4.3 4.4

Method of Calculation ............................................................................................................4-3 Clusters and Nanoparticles ....................................................................................................4-4

Each Atom Counts • hermal Behavior

Clusters of s-p Bonded Systems: Magic Clusters and Superatoms • Carbon Fullerenes • Bare and Hydrogenated Clusters of Silicon • Metal-Encapsulated Nanostructures of Silicon: Discovery of Silicon Fullerenes and Nanotubes • Nanocoating of Gold: he Finding of a Fullerene of Al–Au • Clusters and Nanostructures of Transition Metals: Designing Novel Catalysts

4.5

Nanostructures of Compounds ........................................................................................... 4-17 Novel Structures of CdSe Nanoparticles • Nanostructures of Mo–S: Clusters, Platelets, and Nanowires

Vijay Kumar Dr. Vijay Kumar Foundation

4.6 Summary .................................................................................................................................4-19 Acknowledgments .............................................................................................................................4-20 References...........................................................................................................................................4-20

4.1 Introduction In recent years, there has been tremendous surge in research on understanding the properties of nanomaterials due to manifold interest in technological developments related to seemingly diverse ields such as miniature electronic devices (currently the device size is about 30 nm), molecular electronics, chemical and biological sensors with single molecular sensitivities, drug delivery, optical and magnetic applications (information storage, sensors, LED and other optical devices, etc.), design of novel catalysts, controlling environmental pollution, and green technologies (e.g., hydrogen-based energy storage systems, fuel cells), biological systems, drug design, protective coatings, paints, and material processing using powders, as well as the desire to develop fundamental understanding at the nanoscale, which includes a wide size range of materials in between the wellstudied atomic and molecular systems on the one hand and bulk systems on the other. Advances in our ability to produce, control, and manipulate material properties at the nanoscale have grown rapidly in the past two decades. New forms of nanomaterials such as cage-like fullerenes [1] and hollow nanotubes [2] have been discovered that have opened up new vistas. his has invigorated research eforts and has brought researchers in physics, chemistry,

materials science, and biology on a common platform to address problems of materials at the nanoscale. here is so much to learn and so many new possibilities to design materials at the nanoscale that have no parallel in bulk and it would require much caution to develop applications. While there is very wide scope for research, it would be important to ind materials and develop technologies that would work in a controlled manner as well as to ind ways and guiding principles that could reduce experimental efort and expedite discoveries. In this direction, computer simulations have become a golden tool [3,4] and these are rapidly growing as cost-efective virtual laboratories that could also save much time and efort as well as material used in real laboratories and ofer insight that may not always be possible from experiments.

4.1.1 Interplay between Theory and Experiments: A Necessity at the Nanoscale Unlike bulk materials, the properties of nanomaterials are oten sensitive to size and shape as a large fraction of atoms lie on the surface. A given material may be prepared in diferent nanoforms such as nanoparticles, nanowires, tubular structures, thin coatings (including core-shell type), layered or ribbon forms, etc.

4-1

4-2

and in diferent sizes that oten exhibit very diferent properties in contrast to bulk. Even the structure and compositions (stoichiometries) in nanoforms could be quite diferent from bulk. Both of these factors are very important to understand the properties of nanomaterials similar to bulk systems but unlike bulk systems in which atomic structures of even very complex systems can be determined with good accuracy, it is oten challenging to know the precise atomic structure, composition, and size distribution of nanomaterials experimentally at least for systems having the size range on the order of a nanometer. herefore, oten it is necessary to perform calculations and compare the results with experimental indings to develop a proper understanding of nanomaterials. his interplay between theory and experiment is very important at the nanoscale.

4.1.2 Quantum Mechanical Calculations: A Need for Predictive Simulations As we shall discuss below, it is oten important to perform ab initio calculations at the nanoscale because as mentioned above, the properties are generally very diferent from bulk in the nonscalable regime and surfaces play a very important role. herefore, it is desirable to use methods that could be applicable on an equal footing to bulk, surfaces, and small systems in order to be able to ascertain the diferences between bulk and nanosystems in the right perspective. In this direction, there have been developments based on the density functional theory (DFT) [5] that have attained predictive capability [3]. It is becoming increasingly possible not only to understand experimental observations but also to manipulate materials behavior in a computer experiment and explore diferent sizes, compositions, and shapes to unveil the properties of materials and ind those that may be the desirable ones. his could accelerate materials design. While lots of the experimental data are on relatively large nanoparticles and nanowires having diameters of a few to few tens of nanometers, our ability to produce smaller nanoparticles (∼ 1 nm size) and other nanomaterials with a control on size is increasing. It is also the size range in which quantum coninement efects become very dominant. On the other hand, theoretically it is becoming a routine to perform quantum mechanical ab initio calculations on nanosystems with a dimension of ∼1 nm and study selectively materials with a size of a few nanometers [6]. With increasing computer power in the near future, calculations on larger systems would also become routine and this would be exciting both from applications point of view to design promising materials as well as from the point of view of comparisons between theory and experiments. his chapter deals with the developments in this direction with some examples primarily taken from our own work.

4.2 Small Is Different: The Unfolding of Surprises he oten diferent electronic, optical, magnetic, thermal, transport, and mechanical properties of nanomaterials from the corresponding bulk ofer possibilities of new applications of

Handbook of Nanophysics: Principles and Methods

materials at the nanoscale. A well-known example is the formation of fullerene (cage-like) and nanotubular structures of carbon that led to wide spread research on the understanding of their properties and possible new uses of these novel materials and their derivatives as well as search for such structures in other materials. Single-wall carbon nanotubes have been found to be metallic or semiconducting depending on their type (the way the opposite edges of a graphene sheet are joined) while fullerene cages with possibilities of endohedral and exohedral doping and novel structures where a group of atoms such as C60 is used as building block to form solids [7] instead of atoms revolutionalized our approach to new materials. Another striking example is the inding of bright luminescence from nanostructures of silicon [8,9] in the visible range due to quantum coninement although bulk silicon is an ineicient emitter of light in the nearinfrared range because of its indirect band gap. he color of the emitted light can be changed by changing the size and shape of the nanoparticle that change the energy gap and therefore the excitation energy. he inding of visible luminescence in silicon nanostructures has tremendous implications for the future of optoelectronic devices and it has the potential [10] for the development of silicon-based lasers as well as optical connections in microelectronics. In bulk, the states at the band edges of a semiconductor arise from ini nitely large systems and therefore the properties of semiconductor nanoparticles and other forms can difer from bulk over a large size range. However, metallic nanoparticles tend to attain bulk-like properties for smaller sizes as the highest occupied level lies in a bunch of states, although for small clusters of metals, there could be a sizeable highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) gap and such metal particles could have semiconductor-like behavior. An example of how diferent metal particles could be at the nanoscale is the observation of diferent colors of gold ranging from blue to red as the size is varied [11]. Also gold clusters become a good catalyst [12] even though bulk gold is the most noble metal. Small clusters of gold with up to 13 atoms have been found [13] to have planar structures, though one would think that metal clusters should tend to have close-packed structures (most metals in bulk crystallize in some of the closest packed structures). Similarly, as we shall discuss, small clusters of Rh [14] and Pt [6] have relatively open structures with high dispersion and become magnetic similar to their 3d counterparts in the same column in the periodic table, namely, Fe and Ni, respectively, while in their bulk form, they are nonmagnetic. Another striking observation has been that homonuclear clusters, such as those of Nb, have permanent electric dipole moments [15] though normally an electric dipole is associated with charge transfer from one constituent to another such as in a water molecule. hese few examples illustrate that nanoscience is full of surprises and this gives researchers an exciting opportunity to unfold them, learn fundamentals of new phenomena using ab initio calculations, and modify them as well as design systems with desired properties.

4-3

Design of Nanomaterials by Computer Simulations

4.2.1 Each Atom Counts

4.2.2 Thermal Behavior

here is oten a size distribution of nanoparticles, nanowires, or nanotubes in experiments and because of the variation in properties with size, one would desire to achieve size-selective nanomaterials. Further, any small number of impurities could have very signiicant efect on their properties. he role of impurities becomes very important because of the small size and a small number of atoms. Quantiication of the size distribution as well as the impurities and defects are major diiculties from an experimental point of view as well as for reproducible applications. To illustrate the point, an Al13 cluster has been shown [16] to behave as a halogen-like superatom with large electron ainity of about 3.7 eV similar to that of a chlorine atom while Al14 has been found [17] to behave like an alkaline earth atom. When an Al atom is replaced by a Si atom at the center in icosahedral Al13 to form Al12Si, it becomes an electronically closed shell cluster with a large calculated HOMO–LUMO gap of about 1.8 eV [16,18] within generalized gradient approximation (GGA) or the local density approximation (LDA) in the DFT. A more striking example is that of silicon clusters. It has been found [19] that when a transition metal atom is added to small silicon clusters, there is a dramatic change in their structure. As shown in Figure 4.1, when a Zr or Ti atom is added to Si16, there is the formation of very symmetric Zr@Si16 silicon fullerene or Ti@Si16 Frank-Kasper (FK) polyhedral cage structure of silicon, respectively. his possibility to play with the properties of nanomaterials by changing size and atomic distribution makes their study attractive and it puts demand on the detailed understanding of the atomic distribution and size dependency of properties.

For bulk materials, a lot of thermodynamic data are available on alloys and phase diagrams (mixing, melting, etc.), and much theoretical work has been done on these problems. However, little knowledge has been accumulated on phases that may exist in the nanoform. Further, for bulk systems, empirical methods have been devised for phase diagram and thermodynamic calculations. he interatomic interactions used in such calculations are oten generated from known bulk structures. However, in nanosystems, the structure itself is generally required to be determined by comparing the calculated properties with experimental observations using total energy calculations and i nding the lowest energy structures. he inite size of a nanomaterial could lead to very diferent i nite temperature behavior of atoms that lie on the surface and interior and for small clusters, the behavior of the whole system could difer very much from the bulk. Also, the unique properties of small systems may need to be appropriately protected by capping or passivation as well as nanoparticles may need functionalization for practical usage and it would be necessary to understand the efect of passivation on the properties of nanomaterials and their temperature dependence. In the past two decades, a very large number of studies have been performed on nanomaterials and in many cases, quantitative understanding of the material properties in diverse nanoforms such as small nanoparticles, quasi-one-dimensional structures (nanowires and nanotubes), thin slabs, nanoribbons, and atomic layers has been achieved. Moreover, in some cases, it has been possible to make predictions of new nanomaterials such as silicon fullerenes by metal encapsulation [4,19,20] that have been later realized in the laboratory [21]. In the following, we irst discuss briely the methodology used in such calculations and then discuss selected results.

Si16

Si16

+ Ti

+ Zr

FIGURE 4.1 Transformation of a Si16 cluster into silicon fullerene and Frank–Kasper polyhedral structure by addition of a Zr and Ti atom, respectively. Dark balls show six-atom unit sandwiched between Si4 and Si6 in Si16 cluster. (Courtesy of X.C. Zeng.) Ti and Zr atoms are inside the silicon cage. For the fullerene structure Zr@Si16, some Si–Si bonds are shown as double bonds due to additional pi bonding between the atoms. (Adapted from Kumar, V. and Kawazoe, Y., Phys. Rev. Lett., 87, 045503, 2001; Kumar, V. et al., Chem. Phys. Lett., 363, 319, 2002. With permission.)

4.3 Method of Calculation he DFT method within the framework of LDA or GGA or hybrid functionals for the exchange-correlation energy has been very successful to calculate the total energy of materials in diferent forms such as bulk, surfaces, thin slabs, layers, strips, atoms, molecules, clusters/nanoparticles, nanowires, and nanotubes and to understand the atomic and electronic structures, thermal, optical, elastic, mechanical, transport, and other properties of nanomaterials from irst principles. Within the framework of DFT, diferent methods have been developed to solve the many-body problem of electrons and ions. hese can be classiied into two categories: (1) that treat all electrons such as in linearized augmented plane wave (LAPW) [22] and Gaussian methods [23] and (2) pseudopotential calculations [24] in which one treats only the valence electrons and the core is frozen. In the latter case, the calculation efort is reduced because the core electrons are not included explicitly and one oten uses a plane wave basis that is convenient when ions need to be relaxed and which is oten the case particularly

4-4

for nanomaterials. Another way is to use a tight binding model within the linear combination of atomic orbital approach and also Gaussian method with pseudopotentials. An eicient way to perform combined electron and ion minimization was developed by Car and Parrinello [25] by which one can perform molecular dynamics with the total energy of the system calculated from DFT. In this framework, the pseudopotential method has been very widely used and the results discussed in this chapter have been obtained using such methods [26]. h is approach not only allows calculations of ground state properties, but also simulated annealing can be performed to search for the low-lying structures. Finite temperature properties like dif usion, vibrational spectra, structural changes, melting, etc., can be calculated as well. he pseudopotential method has been developed for the past nearly 50 years [24] and for systems covered in this chapter, the appropriate pseudopotentials are the so-called ab initio pseudopotentials which can treat atoms, molecules, clusters and other nanomaterials as well as bulk systems on an equal footing. hese include the norm conserving pseudopotentials of Bachelet et al. [27], Troullier and Martins [28] and the like, the ultrasot pseudopotentials [29], and the projector augmented wave (PAW) potentials [30]. hese ionic pseudopotentials have been incorporated in some of the widely used programs of electronic structure calculations and it has become possible to treat a majority of elements in the periodic table. For treating nanomaterials within the planewave-based codes, one uses a supercell approach. For clusters and nanoparticles, a large unit cell, oten cubic, is considered with the cluster/nanoparticle placed at the center such that the distance between the atoms on the boundary of the cluster/nanoparticle in the cell and its periodic images is large enough to have negligible interactions and by this method, one can achieve the properties of isolated systems. In this approach, one can also obtain the properties of charged clusters by using a compensating uniform background charge so that the unit cell remains electrically neutral. In the case of quasi-one-dimensional systems such as nanowires and nanotubes, a cell that is large in two dimensions (perpendicular to the axis of the nanowire/nanotube) and has the periodicity of the ininite nanowire/nanotube along its axis is used. Ininite ribbons are treated in a similar way. Finite nanowires/nanotubes and ribbons can be treated in a way similar to those of clusters/ nanoparticles. On the other hand, planar systems, such as slabs and layers, have periodicity in two dimensions and in the third dimension, the system is again made periodic by introducing vacuum space so that again the interaction between slabs/layers is negligible. When the cell dimensions are large such as in treating clusters and nanoparticles, one can oten use only the gamma point for k-space integrations. In the past two decades, these approaches have been used quite extensively for nanomaterials and the calculated results have oten been in good agreement with the available experimental data obtained from spectroscopic measurements such as photoemission, Raman or infrared, abundance spectra of clusters, ionization potentials (IPs), electron ainities (EAs), polarizabilities, magnetic moments, electric

Handbook of Nanophysics: Principles and Methods

dipole moment, optical absorption, and other measurements on nanotubes/nanowires.

4.4 Clusters and Nanoparticles Cluster and nanoparticle systems have been widely studied [31] using both experiments and theory and have contributed greatly to our understanding of nanomaterials. In the following, we present some of the developments.

4.4.1 Clusters of s-p Bonded Systems: Magic Clusters and Superatoms Clusters of s-p bonded metals exhibit electronic shell structure similar to the shell model of nuclei and this leads to the magic behavior of clusters with 8, 20, 40, 58, 92, … valence electrons. he term “magic cluster” has been coined to represent clusters having N atoms that have high abundance in the mass spectrum while the abundance of clusters with N + 1 atoms is quite low. Efectively it means that N-atom clusters behave like rare gas atoms with closed electronic shells and therefore have weak interaction when one more atom is added. his has been understood and veriied from ab initio calculations on clusters of elements such as alkali metals [32], aluminum [33], Ga [34], In [35], and to a certain extent noble metals [36,37] in which d electrons perturb only weakly the nearly free electron behavior by sp-d hybridization. A novel aspect of such small systems is that an aggregate of atoms could behave like an atom. Such aggregates or clusters are referred to as superatoms. As an example, Al13 has 39 valence electrons that are one electron short of the electronic shell closure at 40 valence electrons and it behaves like a halogen atom with large electron ainity of about 3.7 eV. Its interaction with an alkali atom has been shown [17] to lead to a large gain in energy and a charge transfer to the Al13 cluster similar to NaCl molecule. On the other hand, Al7 cluster with 21 valence electrons behaves like a Na atom as it has one electron more than the electronic shell closing at 20 electrons. his illustrates how diferently matter could behave by just changing the size. his has been conirmed from the measurement of IPs of clusters, which oten vary with size [38] and this could be very important for their catalytic behavior, which oten involves charge transfer to reactants. Also, experiments have shown [39] that singly negatively charged Al13 clusters did not react with oxygen because of their closed electronic shell. Further similarity of superatoms to atomic behavior has been found [40] from Hund’s rule that the electronic structure of atoms obeys. In the case of atomic clusters with partially illed electronic shells, oten Jahn–Teller distortions remove the degeneracy of the electronic states arising due to high symmetry, leading to a lower energy of the system. However, in the case of the Al12Cu cluster that has an odd number of valence electrons (37 besides the 10 3d electrons on Cu atom), the electronic structure has been predicted [40] to follow the Hund’s rule such that it has 3μB magnetic moment with perfect icosahedral symmetry and Cu atom at the center of the icosahedron

4-5

Design of Nanomaterials by Computer Simulations

(a)

(b)

FIGURE 4.2 (a) Icosahedral structure of Al12Cu and Al12Si with Cu and Si atoms at the center and (b) the structure of Al13Li8 compound cluster in which ten Al atoms form a decahedron and seven Li atoms cap its faces while one Li atom is at the center. (Ater Kumar, V. et al., Phys. Rev. B, 61, 8541, 2001; Kumar, V. and Kawazoe, Y., Phys. Rev. B, 64, 115405, 2001; Kumar, V., Phys. Rev. B, 60, 2916, 1999.) Down spin

Up spin

Energy [eV]

1g

1g

1g

–4

2p 1f

2p 1f

–6

3d 2s

3d 2s

2s 3d

1d

1d

1d

1p

1p

1s

1s

–8 –10

2p 1f

1p

–12 Al12Cu

1s Al13Cu

FIGURE 4.3 Electronic energy levels of an Al12Cu cluster (spinpolarized) show that the spin-up 2p level is fully occupied while the down-spin 2p level is empty. Interaction of this cluster with an Al atom leads to the complete i lling of the 2p level and a highly stable Al13Cu cluster with a large HOMO–LUMO gap. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 64, 115405, 2001.)

as shown in Figure 4.2a. he highest occupied up-spin state is 2p type (threefold symmetric) in the spherical jellium model and is fully occupied while the lowest unoccupied down-spin state, 2p, also a threefold degenerate state, is fully unoccupied. his is followed by a signiicant gap (see Figure 4.3). herefore, this cluster behaves like an atom with half-illed p state. Accordingly, it was suggested [40] that this cluster should interact strongly with a trivalent atom. Studies on Al13Cu indeed showed strong stability that has also been observed [42]. In this case, the added Al atom is, however, incorporated within the shell of Al atoms and there is a large HOMO–LUMO gap (Figure 4.3). Copper atom being slightly smaller in size occupies the central position. However, doping of aluminum clusters with a bigger atom such as Sn or Pb has been shown to lead to the segregation of the impurity atom at the surface [43] as one expects on the basis of

the surface segregation theory of alloys [44] according to which a large size atom tends to segregate on the surface. Evidence for such a behavior has been obtained recently [45]. On the other hand a Si atom occupies the center of Al icosahedron and Al12Si is a superatom. Ordering has also predicted [41] in Al10Li8 cluster that has a Li atom at the centre of a decahedral cluster of Al10 and seven Li atoms cap this decahedron, as shown in Figure 4.2b. his cluster has 38 valence electrons and therefore its behavior is diferent from the known magic clusters of s-p bonded metals. he Li atoms transfer charge to Al atoms that behave like Si and are covalently bonded. he magic numbers of clusters are likely to be structure dependent. Recently, it has been shown [46] that for clusters with a shell-like structure, 32 and 90 valence electron systems act as magic clusters. Clusters of divalent metals such as Be, Mg, Sr, and Hg are although predominantly s-p bonded, there is nonmetal to metal transition as the size grows due to the closed electronic shell structure of atoms. With increasing size, delocalization of electrons and hybridization of the occupied s states occurs with the unoccupied atomic p and d states. Such a transition was predicted [47] for clusters of Mg having about 20 atoms and it has been later conirmed from experiments [48]. In these divalent atoms, there is an interesting aspect of the electronic structure in that Be atom does not have a core p shell as compared to Mg and similarly for Ca, there is no core d-shell as compared to Sr. his leads to an interesting variation in the properties of the clusters of these elements. For Ca and Sr, the unoccupied d shell in atoms starts getting occupied, as aggregation takes place and it afects the growth behavior of the clusters. For Sr, it was shown [49] that the growth behavior is icosahedral, which is diferent from that of the Mg clusters. Figure 4.4 shows the calculated evolution of the electronic structure as the size grows. One can see that the d states start getting occupied as the size grows beyond about eight atoms. Close packed structures have also been obtained for Ca clusters [50]. However, large clusters of Mg ([48,51]) as well as those of alkali [52] and noble metals [53] have icosahedral structures. Oten Mackay icosahedral structures with 55, 147, 309, 561, … atoms play an important role in the structures of clusters of a variety of materials [54]. Such clusters again lead to magic behavior of the clusters which is related to the completion of an atomic shell rather than an electronic shell. It has been shown [52] that alkali metal clusters with several thousand atoms could have structures diferent from bulk and these could be icosahedral. It has been suggested [49] that clusters of elements with large compressibility are likely to have icosahedral growth. It is because in an icosahedral structure, the center to vertex bond is about 5% shorter than the nearest neighbor vertex to vertex bond. herefore, in order to have a compact packing, the material should be suiciently compressible and accordingly clusters of hard material may not favor icosahedral growth. his is generally true as one inds in large clusters of alkali metals, alkaline earth metals as well as in clusters of rare gases, all of which have high compressibility. Clusters of s-p bonded metals can be described within a jellium model and a spherical jellium model has been very helpful

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Handbook of Nanophysics: Principles and Methods

will lead to high degeneracy of electronic states and likely a large HOMO–LUMO gap, which is important for magic behavior. he choice of the atom at the center is done in such a way that the highest partially occupied electronic level of the substituted atom has the same angular momentum character as the HOMO of the shell of atoms. As an example, when a Si atom replaces an Al atom at the center of Al13 icosahedron, there is the formation of a 40 valence electron icosahedrally symmetric cluster Al12Si with a large HOMO–LUMO gap (Figure 4.2). he Al12 icosahedral shell has 36 valence electrons and the highest occupied level has 2p character in a spherical jellium model, which is a good representation for an icosahedral cluster. An Si atom with its partially illed p valence levels its at the center of Al12 very well. he hybridization between the p-type states of the Al12 atomic shell and Si atom leads to a large HOMO–LUMO gap. Note that substitution of a Ti (also tetravalent) atom does not lead to shell closure [16]. Similarly, one can construct a large number of superatoms with 18 valence electrons such as icosahedral Au12W and Au12Mo clusters (similar structure as that of Al12Si in Figure 4.2) in which the 12 valence 6s electrons of Au atoms occupy 1d shell partially in the spherical jellium model (1s and 1p shells being fully occupied) and with which the d-level of W or Mo hybridizes strongly, leading to an electronically closed shell cluster with efectively 18 valence electrons and a large HOMO–LUMO gap of about 1.6 eV within GGA. Similar results have been obtained for M@Cu12 and M@Ag12 with M = transition metal of group 6. Other sizes of clusters can also be made by substituting diferent transition metals so that one can fulill the 18 valence electron rule. Some examples of neutral clusters are: Fe@Au10, Ti@Au14, Y@Au15, and Ca@Au16. It is to be noted that high abundance of Au15Ti+ has been obtained [55]. In Figure 4.5, we have shown some charged clusters of Cu such as Cu10Co+, Cu12V−, Cu13Cr+, Cu15Ca−, and Cu16Sc+ calculated from the Gaussian method [56]. Such superatoms with a large HOMO– LUMO gap have potential for making solids just like atoms. Indeed

6 6

7

4

4 2

2

0

0

6

6

4

13

12

4 2

2

0

0

Density of states/atom

8

5

4

4

2

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0

8

4

4

4

2

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0

12

3

4

11

10

9

8 2

4

0

0 20 15 10

6

2 Valence 2 Valence 8

2

5 0 –5.5

8

4

–4.5

–3.5 –2.5 Energy [eV]

–1.5

0 –5.5

–4.5

–3.5 –2.5 Energy [eV]

–1.5

FIGURE 4.4 Evolution of the electronic structure of Sr clusters. he atomic structures of the clusters are also shown as inset. he number indicates the size of the cluster. he two curves in each igure show results for which Sr atom has been considered to have two valence electrons (only the outermost 5s electrons) and eight valence (including the six 4p semicore electrons). Vertical line shows the HOMO and the high density of states above the HOMO corresponds to the d states. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 63, 075410, 2001. With permission.)

in understanding the properties of such clusters. In this model, the electronic states can be described in terms of 1s, 1p, 1d, 2s, 1f, 2p…. electronic shells. A way to design superatoms of s-p bonded metals is by considering symmetric structures such as an icosahedron and substituting another atom at the center so that a closed electronic shell is possible. he high symmetry of the structure

FIGURE 4.5 Atomic structures of Cu10Co+, Cu12V−, Cu13Cr +, Cu15Ca−, and Cu16Sc + clusters. he transition metal atom is inside the cage of Cu atoms.

Design of Nanomaterials by Computer Simulations

4-7

recent experiments [57] on Sc-doped copper clusters do show high stability of Cu16Sc+. Similarly, Cu15Sc has been found to be a superatom. Interestingly Cu6Sc+ and Cu5Sc have also been found [58] to be very stable clusters. hey correspond to efectively eight valence electron clusters, which also correspond to an electronic shell closing. Earlier experiments [59] on silver clusters doped with transition metal atoms showed high abundances of Ag16Sc+, Ag15Ti+, Ag14V+, Ag11Fe+, and Ag10Co+, all efectively 18 valence electron clusters and an eight valence electron cluster Ag9Ni+.

diferently [20] from those of carbon and it was in 2001 that a fullerene of silicon was stabilized [19] by encapsulation of a metal atom using ab initio calculations. his discovery led to renewed interest in research on silicon nanoparticles and a large number of papers have been published on doping of diferent metals in silicon as well as other elements [4,20]. In the following, we discuss this inding and the design of a large variety of other new structures of silicon, which have shown the important role of ab initio calculations at the nanoscale in making new discoveries.

4.4.2 Carbon Fullerenes

4.4.3 Bare and Hydrogenated Clusters of Silicon

Experiments on laser ablation of graphite by varying nucleation conditions in a cluster generating apparatus showed [1] special stability of C60 clusters, which was suggested to have an icosahedral football-shaped empty cage structure with 12 pentagons and 20 hexagons. Each carbon atom in this structure interacts with three neighboring carbon atoms. It was named “fullerene” ater Buckminster Fuller, the architect of geodesic domes, and the structure was conirmed by NMR experiments [60,61]. he inding of C60 was considered revolutionary in the chemistry of carbon and it was thought to provide many new derivatives of C60 similar to benzene. Later, another exciting discovery took place in that a solid of C60 was formed [7]. Furthermore, when this solid phase was doped with alkali metals, superconductivity was discovered [62]. h is led to feverish activities on carbon fullerene research and many other fullerenes of carbon such as C70 and C84 as well as endohedral carbon fullerenes in solid phases were produced. Further research on carbon led to the inding of nanotube structures [2]. hese exciting developments have attracted the attention of a very large number of researchers around the world and a wide variety of research related to transport in nanotubes, mechanical strength, composite formation, ield emission, electronic devices, support for catalysis, hydrogen storage, lubrication, among others, has taken place. Ab initio calculations have played a very important role in the understanding of the properties of these materials. Also in the larger size range, crystallites of diamond, also called nanodiamonds, have been studied. However, we focus on silicon in this section because calculations led to the discovery of new fullerene [19] and nanotube [63] structures of this technologically important material and great interest has developed in nanostructures of silicon for developing miniature devices. Similar to carbon, silicon is a tetravalent element but it exists only in the diamond structure in bulk although a clathrate phase also exists [64] in which silicon is again tetrahedrally bonded and with doping of alkali/alkaline earth metals, it shows interesting superconducting and thermoelectric properties, whereas carbon can exist in graphite phase as well with sp2 bonding besides the diamond structure. Carbon is versatile to form single, double, and triple bonds in a large number of molecules and in the fullerene form, the bonding is predominantly sp2 type. he discovery of these new structures of carbon raised a question about the possibility of similar structures of silicon. Some studies were devoted to this aspect. However, silicon clusters behave quite

When a bulk Si crystal is divided in to two pieces, two surfaces are created and some covalent bonds are broken, leading to the formation of dangling bonds on both the surfaces. In order to minimize the energy of such dangling bonds, the electronic charge density redistributes itself and oten it leads to some ionic relaxation and in some cases, a reconstruction of the surface atomic structure. For nanomaterials, one divides bulk into very small pieces to create a very large surface area. Accordingly, a large fraction of atoms in nanomaterials lie on the surface, which plays a major role in the understanding of their properties as well as their applications. Because of surface reconstruction, the determination of the atomic structures of semiconductor clusters and nanoparticles is challenging and ab initio calculations have played a very important role in understanding them. It has been found [65] that Si clusters with ∼1 nm diameter have structures that are very diferent from bulk. Clusters with up to 10 atoms have high coordination structures similar to metal clusters, while in the size range of 11–25 atoms prolate or stufed fullerenelike structures are favored. An example of a prolate structure of Si16 is shown in Figure 4.1. Also a 20-atom Si cluster has prolate structure (Figure 4.6) while for Si25, a 3D structure becomes favorable [66]. For larger clusters, 3D structures are lowest in energy. hese are based on fullerene cage structures that are also illed with Si atoms. he presence of core atoms saturates partially the dangling bonds of the fullerene cage and this seems to be optimal for clusters with 33, 39, and 45 silicon atoms that have been found to have low reactivity and therefore a kind of magic behavior. For each cage size, there may be an optimal size of the core that would it in the cage. Such core-cage isomers have been shown to be signiicantly lower in energy than other structures. Yoo and Zeng [67] have studied the optimal combinations of the core and cage units and found the carbon fullerene cages to be most favorable in the range of N = 27–39. Some of the most favorable combinations were reported to be Si3@Si 24, Si3@Si28, Si3@Si30, Si4@Si32, Si4@Si34, and Si5@Si34. he structure of Si31 is shown in Figure 4.6. More recently, a spherical-shaped quantum dot of pristine Si with 600 atoms was made [68] by joining tetrahedral semiconductor fragments into an icosahedral particle. It has been shown from calculations that such icosahedral nanoparticles are more favorable than bulk fragments for diameters of less than 5 nm. hese quantum dots have tetrahedral bonding and a Si20 fullerene at the core. Independently using molecular dynamics calculations [69], Si nanoparticles with 274, 280, and 323 atoms have been

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Handbook of Nanophysics: Principles and Methods

(a) 1000

37

Compact structures

4.5 Binding energy/atom/eV

125

4.0 3.5

16

8

Si7

Stable

Metastable

Si6

Si5

(c)

(d)

Molecular structures Si4

2.5

Si3

Prolate structures

2.0

Si2

1.5

(b)

(b)

N = 10–25 prolate SiN+

3.0

1.0 0.0

(a)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

n–1/3

FIGURE 4.6 (a) Prolate atomic structure of Si20 and a stufed fullerene structure of Si31. Dark color Si6 links Si6 and Si8 clusters in Si20 while three dark color atoms are inside a fullerene-like distorted cage of Si28. (Courtesy of X.C. Zeng.) (b) he binding energy of silicon clusters as a function of n−1/3. (Ater Horoi, M. and Jackson, K.A., Chem. Phys. Lett., 427, 147, 2006. With permission.)

shown to form icosahedral structures as suggested by Zhao et al. he binding energy of silicon clusters increases rapidly initially and becomes nearly constant in the prolate regime and then rises again towards the bulk value when the clusters start developing again compact structures as shown in Figure 4.6b. For larger and larger nanoparticles, the inner core would tend to have bulk diamond atomic structure while the surface region would be reconstructed. he surface of the nanoparticles can be passivated such as with hydrogen and depending upon the nanoparticle size as well as the number of H atoms, nanoparticles with diferent structures and diferent properties could be prepared. hese could be nanocrystals with dangling bonds completely saturated with H, stufed fullerene-like structures with fewer dangling bonds [71] that are saturated with H as well as empty cage SinHn (n ∼ 10–30) fullerenes [72], some of which are shown in Figure 4.7. In the latter case, each Si atom is coordinated with three Si atoms with nearly sp3 bonding and the dangling bond on each Si atom is saturated with an H atom. Such cage structures of Si with n = 20, 24, and 28 are found in clathrates [73], but cages are interlinked and no hydrogen is required to saturate the dangling bonds. he HOMO–LUMO gap of these hydrogenated silicon clusters is generally large and accordingly

FIGURE 4.7 Hydrogenated silicon cages SinHn with (a)–(d) corresponding to n = 14, 16, 20, and 28. (Adapted from Kumar, V. and Kawazoe, Y., Phys. Rev. B, 75, 155425, 2007; Kumar, V. and Kawazoe, Y., Phys. Rev. Lett., 90, 055502, 2003. With permission.)

such structures have interesting optical properties as well as there could be possibilities of making derivatives and new molecules [74] and applications as sensors. Endohedral doping of such cages can be used to tailor HOMO–LUMO gap as well as to design nanomagnets with atomic-like behavior [72]. In contrast to the metal-encapsulated silicon clusters in which metal atoms interact with silicon cage very strongly, endohedral doping of these cages leads to a weak bonding of the guest atom, as shown in Figure 4.8 for a large variety of dopants in cages with 4 D@SinHn

3.5 Embedding energy [eV]

5.0

Ti

3

Fe

2.5 2

V

1.5

Be

1 Mn

0.5 0

10

Zr Nb

Ni

Cr

W V Be Mo Na Zn I

15

20

Ca

Be Ca, Ni Ba Na

Zn

Ba Ca Be Na Zn Ar

25

n

FIGURE 4.8 Binding energy of a variety of endohedral dopants D in SinHn cages. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 75, 155425, 2007. With permission.)

4-9

Design of Nanomaterials by Computer Simulations

diferent n [72]. Cages such as with n = 20 are large enough to accommodate diferent atoms. Also the n = 20 cage is the most symmetric and has the highest stability. Accordingly, the guest atom can retain, to a large extent, its atomic character. For magnetic atoms Cr, Mn, and Fe, the guest atom was shown to have the same magnetic moment as in its atomic state. Such atoms were called slaved atoms [72] and hyperine interaction was shown [75] to be a way to ind endohedral doping of such cages. he inding of bright photoluminescence in silicon was irst observed [8] in a form that is known as porous silicon and which is believed to have nanoparticles of about 2 nm diameter and nanowire-like structures. Later bright red, green, and blue light emission was obtained from hydrogenated silicon nanoparticles with 3.8, 2.5, and 1.5 nm diameters [9]. he HOMO–LUMO gap of Si nanoparticles changes with size and shape due to the quantum coninement of electrons (consider a quantum mechanics text book example of a particle in a box whose size could be varied) and this makes nanoparticles of silicon attractive for applications. he nanoparticles with 1.5 nm diameter were suggested to have Si29H24 composition. Time-dependent density functional calculations [76] as well as quantum Monte Carlo calculations [9] on this cluster predicted optical gap to lie in the deep blue region, supporting the experimental indings. Calculations [77,78] on H-terminated Si clusters of varying sizes and having sp3 bonding with diamond-like structure have shown a decreasing trend of the optical gap with increasing nanoparticle size as observed. However, in the form of SinHn cages, the HOMO–LUMO gap has been found [72] to be less sensitive to size. Another way that quantum coninement can be controlled is by oxidizing silicon nanoparticles so that there is a core of silicon and a shell of SiO2 surrounding this core. By changing the thickness of the oxide shell, the size of the core can be modiied and this would afect the optical properties of silicon nanoparticles. he oxide shell also acts as protective cover on silicon nanoparticles.

4.4.4 Metal-Encapsulated Nanostructures of Silicon: Discovery of Silicon Fullerenes and Nanotubes While much research has been done on elemental Si clusters as discussed in Section 4.4.3, no cluster size has been found to produce strikingly high abundance. For the use of silicon nanoparticles with unique properties, one would need to produce them in a controlled way in large quantities. hough there is a possibility of using hydrogen termination as discussed above, a novel way has been found to be metal encapsulation [19,20]. he irst report of interaction of silicon with metal atoms appeared about two decades ago where strikingly high abundances of MSi15 and MSi16 clusters with M = Cr, Mo, and W were obtained by Beck [79,80] in experiments that were aimed to understand Schottky barrier formation in metal–silicon junctions. hese metal-doped clusters were found to exist almost exclusively in this mass range and the intensities of other clusters were very small. For more than a decade, there was no theoretical work to understand this behavior though Beck speculated that the metal atom might be

surrounded by silicon atoms. In 2001, another observation was made [81] by reacting metal monomers and dimers with silane gas. his experiment produced metal–silicon–hydrogen complexes but no hydrogen was associated with WSi12 clusters. h is led to a conclusion that WSi12 was a magic cluster, which did not interact with hydrogen. Using ab initio calculations a hexagonal prism structure with W atom at the center was found [81] to be of lowest energy. Henceforth, we refer this kind of endohedral structures with a cage of Sin and M atom, inside as M@Sin. Independently, a Zr@Si20 cluster with a fullerene structure of Si20 was studied by Nellermore and Jackson [82] from ab initio calculations. hey obtained a large gain in energy due to endohedral doping of Zr. However, Kumar and Kawazoe [19] found this cluster to deform upon optimization as Zr interacts with silicon strongly and the Si20 cage is too big for a Zr atom to have strong interaction with all the Si atoms. Using a shrinkage and removal of atom method akin to laser quenching, it was found that 16 Si atoms were optimal to encapsulate a Zr atom in a silicon cage, which had a structure similar to a carbon fullerene in that each Si atom had three neighboring Si atoms. he resulting silicon fullerene, Zr@Si16, stabilized by a Zr atom (Figure 4.1), is smaller than the smallest carbon fullerene C20 with a dodecahedral structure (see Figure 4.9) in which all the 12 faces are regular pentagons (from Eulers theorem one needs at least 12 pentagons and an arbitrary number of hexagons to have a closed fullerene structure in which each atom has three nearest neighbors). In Zr@Si16, there are eight pentagons (not regular) and two square faces as shown in Figure 4.1. In carbon fullerenes, pentagons are the locations of strain in bonding and there is the isolated pentagon rule. In silicon fullerenes, pentagons are favored and rhombi are the locations of strain. Accordingly, they favor an isolated rhombus rule [83]. his discovery showed how an unexciting Si16 cluster can be turned in to a very interesting structure by using a metal atom. Soon ater this discovery, it was established that the size of the metal atom plays a very important role in determining the number of Si atoms that could be wrapped around it. he largest cage of silicon that can be stabilized by one M atom has

(a)

(b)

FIGURE 4.9 (a) La@Si 20 dodecahedral fullerene interacting with a Cu atom. Elemental C20 has similar structure (without La and Cu atoms) but with icosahedral symmetry. (b) he charge density of this fullerene shows covalent bonding within the fullerene and charge transfer from Cu atom. h@Si20 is fully icosahedrally symmetric. (Ater Kumar, V. et al., Phys. Rev. B, 74, 125411, 2006. With permission.)

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Handbook of Nanophysics: Principles and Methods

been predicted [84] to be h@Si20 (Figure 4.9) with a dodecahedral structure of Si20 and icosahedral symmetry similar to that of C20. Other rare earth atoms can also be doped and even magnetic fullerenes can be stabilized [85]. For carbon, C20 has low stability among fullerenes as the bonding becomes nearly sp3 type while in larger nanostructures such as C60 fullerene and nanotubes, sp2 bonding is more favorable. On the other hand, silicon favors sp3 bonding and therefore Si20 has been predicted to be an ideal structure for silicon nanoparticles as C60 is for carbon. However, the HOMO–LUMO gap for h@Si20 is relatively small, though it has the largest binding energy among the silicon clusters stabilized by a metal atom. When a trivalent atom such as La is doped [85], then La@Si 20 acts like a halogen with large EA and accordingly a Na or Cu atom has ionic interaction as shown in Figure 4.9 by giving charge to the fullerene. Smaller fullerenes with Ni@ Si12 and W@Si14 are also possible as shown in Figure 4.10. It can be noticed that in the lowest energy structure of these smaller fullerenes, the rhombi are isolated such as in W@Si14 whereas in Ni@Si21 some rhombi have to be nearest neighbors. Besides these fullerene structures, a large number of other polyhedral cages M@Sin of diferent sizes have been stabilized by endohedral doping of a metal atom, M. Among these, a prominent structure of high symmetry (tetrahedral) is Ti@Si16 with a Z16 Frank–Kasper polyhedron (Figure 4.1). Both Ti and Zr are isoelectronic but have slightly diferent atomic sizes. As the M atom in these structures is very tightly bound with the Si cage, even a small diference in the atomic size of the M atom could lead to diferent structures. Doping of Ti or Zr in Si16 cage has been shown [19] to lead to a gain of ∼10 eV. herefore, optimization of this large energy gain controls the atomic structure of the Si cage. hus the properties of such endohedral clusters can be controlled by varying M atom and the size of the cage [4]. his is also seen from the result that Zr@Ge16 does not have a fullerene structure [86], but a Frank–Kasper polyhedral isomer as for Ti@Si16 is the lowest in energy. Ge cage is slightly bigger than Si and a Zr atom can it well in its Frank–Kasper cage. he stability of these high-symmetry structures can be understood from a spherical potential model [4,76] according to which the highest occupied level of the Si/Ge cage has d-character with four holes. Accordingly the d-orbitals of a Ti, Zr, or Hf atom (with four valence electrons) can interact with this cage strongly and form bonding and antibonding states, leading to full occupation

FIGURE 4.10

of the d-shell of the cage and large HOMO–LUMO gap. Selected cages with fullerene-like structures and Frank–Kasper-like structures are shown in Figures 4.10 and 4.11, respectively. he smallest cage has been suggested [87] to be M@Si10 with M = Ni or Pt. Note that Si10 is a magic cluster with a tetracapped prism structure. However, doping with a Ni or Pt atom further lowers the energy signiicantly and also leads to a diferent atomic structure. Interestingly, Pb10Ni has been produced in bulk quantity [88]. It has a bicapped antiprism tetragonal structure of Pb10 and Ni at its center [87]. For Zr@Si16, the optical gap has been predicted to lie in the red region [76]. However, the Ti@Si16 Frank–Kasper polyhedral cage has signiicantly larger HOMO–LUMO gap (2.35 eV) than Zr@Si16 (1.58 eV) fullerene and it has been predicted to have the optical absorption gap in the blue region. By changing the size of the M atom, one can stabilize silicon cages with 10–20 atoms with difering properties [4]. In these silicon cages, the magnetic moment of the M atom (if any) is generally quenched due to the strong interaction of the M atom with the cage. However, it is possible to stabilize Si nanoparticles with magnetic moments by encapsulation of transition metal or rare earth atoms [85,89]. It was shown [89] that Mn@Sn12 has 5μB magnetic moments in an icosahedral structure and that it behaves like a magnetic superatom. Subsequently experiments [90] did ind this superatom as shown in Figure 4.12. To stabilize an icosahedral cage with Sn, Ge, or Si atoms, one needs to add two electrons to completely occupy the HOMO. Accordingly, Zn@Sn12 is a magic structure, as one can also see in Figure 4.12. Mn has two 4s electrons in the valence shell and the 3d orbital is half illed. he two s electrons are used to stabilize the cage and the remaining ive d electrons lead to its high magnetic moment. One can notice that for Cr doping, the mass spectrum does not show as prominent peak at n = 12 as for Mn doping, which indicates the role of the electronic coniguration in the stability of the clusters. herefore, M encapsulation provides a possibility to produce large quantities of nanoparticles with desired properties. Subsequent to these predictions, experiments have been performed and many of the clusters such as Ti@Si16, Zr@Si16, isoelectronic V@Si16+ and Sc@Si16−,… have been realized in the laboratory [21]. As shown in Figure 4.13, almost exclusive abundance of Si16Ti has been obtained in mass spectrum while Si16Sc− and Si16V+ have high abundance compared with other sizes.

Atomic structures of M@Si N fullerenes with N = 12, 14, and 16.

4-11

Design of Nanomaterials by Computer Simulations

(a)

(b)

(c)

(d)

(e)

FIGURE 4.11 Frank–Kasper polyhedral structures of M@Si N clusters. (a) through (e) correspond to N = 10 (bicapped tetragonal antiprism), icosahederon, cubic, Z15 Frank–Kasper polyhedron, and Z16 Frank–Kasper polyhedron, respectively.

(1, 10–16)

0

10

ZnSnn

Abundance [arb. units]

Abundance [arb. units]

(1, 8–14)

ZnPbn

20

n (number of atoms)

0

(1, 6–16)

CrSnn

(1, 6–16)

MnSnn

10 n (number of atoms)

20

FIGURE 4.12 Mass spectra of Zn-, Cr-, and Mn-doped clusters show high abundance of ZnSn12, ZnPb12, and MnSn12 clusters. (Ater Neukermans, S. et al., Int. J. Mass. Spectrom., 252, 145, 2006. With permission.)

hese results have reassured the power of ab initio calculations in the design of nanomaterials. Photoemission experiments [21] on Zr@Si16 and Ti@Si16 clusters have shown HOMO–LUMO gaps as predicted. Also experiments [91] on reaction of water and other molecules with M-doped silicon clusters have provided support for encapsulation of the M atom. As shown in Figure 4.14 for water on Ti@Sin, small Ti-doped silicon clusters in which Ti atom is available for reaction with the molecule show higher binding energy [92] that correlates well with their higher abundance while clusters beyond a certain number of silicon atoms react very weakly as the Ti atom gets surrounded by Si atoms as

it can be seen from a sharp drop in the binding energy of a water molecule in Figure 4.14 beyond 12 silicon atoms. hese results matched with experiments [91] and thus conirmed encapsulation of Ti atom in these clusters. he idea of encapsulation to produce highly stable clusters of selected sizes is not unique to silicon and has general applicability whether it is a cluster of some metal (see discussion in Section 4.4.1) or semiconductor, and is extendable to encapsulation of a group of atoms. Indeed, encapsulated clusters of other elements such as Ge, Sn, [87,89], and some metals have been predicted as well as produced in the laboratory such as Al@Pb12+ [93].

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Handbook of Nanophysics: Principles and Methods

Intensity [arb. units]

n = 16

(a)

300

400

600

400 500 600 Mass number [m/z]

700 SinV+

SinSc–

n = 16

(b)

500

SinTi

n = 16

400 (c)

500 600 Mass number [m/z]

4.15

H2O

1.2

4.10

1.0

4.05

0.8

4.00

0.6

3.95

0.4

3.90 TiSin

0.2

3.85 3.80

0.0 8

9

10

11

12

13

14

15

Binding energy of TiSin [eV]

Binding energy of H2O [eV]

FIGURE 4.13 Mass spectra showing size-selective formation of (a) TiSi16 neutrals, (b) ScSi16 anions, and (c) VSi16 cations. (Reproduced from Koyasu, K. et al., J. Am. Chem. Soc., 127, 4995, 2005. With permission; Courtesy of A. Nakajima.)

16

Number of Si atoms

FIGURE 4.14 Binding energy (let scale) between TiSi N and a H2O molecule, N = 8–16. he right scale shows the binding energy per atom of TiSi N clusters. Experiments show little abundance of TiSi N clusters with H2O molecules beyond N = 12. (From Kawamura, H. et al., Phys. Rev. B, 70, 193402, 2004. With permission.)

As the bonding between the endohedral atom and the cage is very strong, the relative variation in the atomic sizes of the endohedral atom and the cage gives much freedom to produce a wide variety of highly stable species. Further studies on assembly of metal-encapsulated silicon clusters showed [63,94] that one can form nanotube structures of silicon by metal encapsulation. Singh et al. [63] assembled Be@Si12

clusters, which have some sp3 bonding character, as shown in Figure 4.15. However, when two clusters of Be@Si12 interact, they form hexagonal rings of silicon with Be atoms in between. his structure can be extended in the form of an ininite nanotube, which is metallic. Within the hexagonal ring, there is sp2 bonding with two lobes of the sp2 hybrid orbitals pointing toward each other in a silicon hexagon and one lob on each silicon atom points outward of the hexagonal ring. Such lobes on diferent hexagons are pi bonded in an ininite nanotube, giving rise to its metallic character. he pz orbital on each silicon atom links hexagons with a covalent bond. hese studies showed that metal encapsulation can also be utilized to stabilize sp2 bonding in silicon. Such kind of hexagonal structures are also found in nanowires of YbSi2 and ErSi2 silicides [95] that have been grown on substrates using anisotropy in the lattice parameters. Also following the discovery of silicon nanotubes, experiments were performed [96] on Be deposition on a Si(111) surface and the features on the surface as seen from scanning tunneling microscopy (STM) images were interpreted as representatives of the structures obtained from calculations. Several subsequent studies have been done and even magnetic nanotubes have been obtained [97] from ab initio calculations when magnetic atoms such as Mn, Fe, and Ni are doped. Also nanowires of Zr@Si16 fullerenes have been found [98] to be semiconducting. In an earlier work on cluster assembly, Si24 clusters with fullerene structures were assembled to form a nanowire [99].

FIGURE 4.15 Assembly of two Be@Si12 clusters leads to a tubular structure of Si with sp2 bonding. h is can be extended to form ininite nanotubes. (Ater Singh, A.K. et al., Nano Lett., 2, 1243, 2002. With permission.)

4-13

Design of Nanomaterials by Computer Simulations

4.4.5 Nanocoating of Gold: The Finding of a Fullerene of Al–Au Traditionally, gold plating has been and is widely used in jewelry and other forms in bulk. However, in a recent study [100], nanocoating of gold has been studied on clusters. When gold is plated on nanoparticles, it is interesting to know what happens because in nanoform gold is quite diferent from bulk [13]. Using ab initio calculations, small gold clusters having up to 13 atoms have been found to have planar structures while Au 20 is magic and has a tetrahedral structure [101] in which all atoms lie on the surface as shown in Figure 4.16. Also a fullerene structure of Au32 (Figure 4.16) has been found to be stable [102]. Small gold clusters have been surprisingly found to be catalytically interesting [12] although in bulk, gold is the most noble metal. herefore, diferent nanoforms of gold may have interesting electronic properties and catalytic behavior. As discussed earlier in this section, an Al12Si or Al13− cluster has special stability in the form of a symmetric icosahedron, Kumar [100] considered coating of the 20 faces of this icosahedron with 20 gold atoms that formed a dodecahedron. Optimization of this structure and other isomers showed that Al atoms are more favorable when placed outside the dodecahedron of gold on its 12 faces such that there is a surface compound formation in which each Al atom interacts with ive Au atoms and each Au atom interacts with three Al atoms as shown in Figure 4.16. As compared to Al13 and Au20, both of which are magic structures, there is a large gain in energy of 0.55 eV/atom when the compound fullerene is formed. he binding energy of this fullerene structure (about 3 eV/atom) is much higher as compared to the value of about 2.46 eV/atom for Au32 also and it shows that the compound fullerene of Al–Au is energetically very stable. h is inding also pointed to the possibility of such structures of other compounds. Analysis of the electronic structure of this compound fullerene showed the stability to be related to the shell closing at 58 valence electrons and

an empty cage fullerene Al12Au202− (Figure 4.16) was suggested to be very stable with a HOMO–LUMO gap of 0.41 eV. his gap is much smaller than the values of 1.88 and 1.78 eV for Al13− and Au20, respectively, and therefore the interaction of this fullerene with atoms and molecules is likely to be quite diferent from Al13 and Au20. Subsequently, it has been found that a fullerene-like structure in which two Au atoms are inside the cage has lower energy. It is also possible to have endohedral fullerenes such as Au@Al12Au 20−, Au2@Al12Au 20, Au3@Al12Au 20+, and Al@Al12Au 20− (here the endohedral Al atom contributes only one electron to the cage), all of which have efectively 58 valence electrons.

4.4.6 Clusters and Nanostructures of Transition Metals: Designing Novel Catalysts From technological point of view, clusters and nanoparticles of transition metals are very important in catalysis and in magnetic and optical applications. Clusters of metals such as Fe, Rh, Ru, Pd, and Pt and their alloys as well as speciic atomic arrangements are of particular interest. Clusters of Fe have been observed to have high magnetic moment [103] and for a long time this has remained unresolved. On the other hand, clusters of nonmagnetic elements such as Rh, Pd, and Pt become magnetic. In recent years, much attention has been and is being paid to understand the atomic and electronic structures of these clusters and to develop new structures. he magnetic moments in Rh clusters were observed in the early 1990s [104] but these could not be properly understood for a long time. About a decade later, detailed ab initio calculations were performed, which gave a surprising result of simple cubic structures of Rh clusters to be most favorable [14] at least up to a size of 27 atoms. hese cubic structures are stabilized by eightcenter bonding as shown in Figure 4.17. hese results showed some interesting aspects of bonding in these clusters. Intuitively

FIGURE 4.16 Atomic structures of (top from let to right) Au 20, Au32, and Al13Au 20−, and (bottom from let to right) Al12Au 202−, Al12Au 21−, and Al12Au 21− (another view). Dark (light) balls represent Al(Au) atoms.

4-14

Handbook of Nanophysics: Principles and Methods

8

12

18

27

FIGURE 4.17 (Top) Cubic structure of Rh8, eight center bonding, and spin polarization. (Bottom) cubical structures of Rh12, Rh18, and Rh27 clusters. (Ater Bae, Y.-C. et al., Phys. Rev. B, 72, 125427, 2005. With permission.)

one would consider that a lower coordination leads to a higher magnetic moment. However, in Rh cubic clusters although the coordination is signiicantly lower than in an icosahedron, the cubic clusters were found to have lower magnetic moments as compared to icosahedral clusters and these were in very good agreement with the experimental data as shown in Figure 4.18 and thus these studies resolved a long standing problem. he lowering of the magnetic moments is due to the speciic bonding in these clusters. he magnetic moments oscillate as the size increases and become quite small for clusters with more than about 60 atoms. he binding energy of clusters in diferent structures is shown in Figure 4.18 and for some sizes cuboctahedral and decahedral clusters become close in energy with cubic isomers or lie slightly lower in energy, but generally cubic clusters have lower energy

up to n = 27 and icosahedral clusters lie much higher in energy. he HOMO–LUMO gap of clusters with n = 8, 12, and 18 has local maximum value and the average nearest neighbor bond lengths are shorter in cubic clusters compared with other isomers as also shown in Figure 4.18. Clusters of Pt are although very important catalysts and are used in fuel cells, which are currently attracting great attention, proper structures of these clusters were not known. Recently, extensive ab initio calculations [6] on clusters and nanoparticles with sizes of up to about 350 atoms have been carried out and very interesting i ndings have been made. Oten clusters of many elements tend to attain icosahedral structure before attaining bulk atomic arrangement. However, Pt clusters have been found to attain bulk atomic structure at an early stage of about 40 atoms in the form of octahedral clusters (Figure 4.19), which have high dispersion and which is good for catalysis. he small clusters are planar with a triangle of six atoms as well as a square of nine atoms that are important building blocks. Pt10 is a tetrahedron with all triangular faces of six atoms while Pt12 is a prism made up of two Pt6 clusters. Pt14 is a pyramid with a square base of Pt9 and four triangular faces of Pt6. Pt18 is again a prism with three Pt6 clusters stacked on top of each other, forming three square faces of Pt9. All these clusters have all atoms on the surface. Interestingly, a tetrahedron of Pt 20 with 10-atom triangular faces is not of the lowest energy. Similarly a planar structure with a triangle of Pt10 is not of the lowest energy, showing the importance of Pt6 triangle. Continuing this behavior, Pt22 has a decahedral cage structure with 10 Pt6 type faces. For Pt27, a simple cubic structure with all the six square faces of Pt9 type has been found to be of lowest energy. Beyond this size, simple cubic structures continue but soon there is a transition to octahedral structure at Pt44. From calculations on octahedral clusters and icosahedral clusters, it has been concluded that icosahedral clusters have higher energy (see Figure 4.19) and therefore it has been argued that for Pt clusters and nanoparticles,

5

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2 cube icosa deca cubo

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FIGURE 4.18 (a) Variation of the binding energy of diferent isomers of Rhn clusters and the HOMO–LUMO gap of cubic clusters which are of the lowest energy in the small size range. (b) he magnetic moments of Rhn clusters in cubic structures agree well with the experimental data shown by vertical lines whereas the icosahedral isomers have much higher magnetic moments. he inset also shows variation in the nearest neighbor bond lengths in diferent isomers. Cubic clusters have short bonds. (Ater Bae, Y.-C. et al., Phys. Rev. B, 72, 125427, 2005. With permission.)

4-15

Design of Nanomaterials by Computer Simulations

344 231 85 309

Energy [eV/atom]

4.5

44

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27 18

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FIGURE 4.19 he variation in the binding energy of lowest energy Pt clusters. Lowest energy atomic structures for a few sizes are also shown. Also shown by crosses is the binding energy of icosahedral clusters for N = 13, 55, 147, and 309, which have lower binding energy. he inset shows the variation in the magnetic moments and the spin polarization for Pt6 in which antiferromagnetic coupling can be seen. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 77, 205418, 2008.)

icosahedral growth may not occur at any size. he small clusters have magnetic moments and there is an oscillatory behavior with the variation in size, but the magnetism is weak as compared to Pd clusters [105]. Also in some cases such as Pt6 shown in inset of Figure 4.19, the coupling is antiferromagnetic between two groups of atoms that are individually ferromagnetically coupled. In the large size range of clusters, the variation of the binding energy of Pt N with N−1/3 becomes nearly linear and an extrapolation of the binding energies of clusters in the limit of N → ∞ gives the cohesive energy of bulk Pt. In these calculations, the ionic pseudopotential was taken from the projector-augmented wave formalism [30] with relativistic treatment, which is important for a proper description of Pt clusters. hese novel structures of Pt suggest that it could be possible to manipulate and transform Pt in to other forms by alloying as well as to develop overlayers of Pt on cheaper materials. Studies are being carried out [106] on this aspect as well as on supported clusters on graphite to i nd if the structures of clusters remain preferred when Pt is deposited on graphite as well as the interaction of the supported structures with atoms and molecules. In contrast to Pt in which relativistic efects are more important and the kinetic energy of the electrons could be lowered by having open structures, clusters of Pd [105] and Ni [107] have close packed structures. Extensive calculations on Pd clusters with up to 147 atoms showed [105] icosahedral growth to be favorable. Pd clusters attain magnetic moments that are distributed over the whole cluster. Interaction with H and O was shown to quench the magnetic moment of Pd13. he total

density of states of icosahedral Pd147 with (111) type of faces was found to show signiicant diferences from the density of states of a (111) surface of bulk Pd. Similar deviations of the total density of states have been obtained for Pt 344 nanoparticles as shown in Figure 4.20. In this case, all the faces are of fcc (111) type as also in an icosahedron. he density of states starts developing some features as in the density of states of bulk (111) surface, but particularly near the HOMO, the deviations are signiicant and accordingly it has been suggested that the catalytic behavior of such clusters could difer from that of a bulk surface. Stern Gerlach experiments [103] on clusters of iron at 120 K showed high magnetic moments of about 3 μB/atom for clusters with up to about 120 atoms (bulk value 2.2 μB/atom) while for clusters of Co and Ni (temperature 78 K), the magnetic moments decrease more rapidly toward the bulk value of 1.72 and 0.6 μB/atom, respectively, as the cluster size increases. No proper understanding of the structures and high magnetic moments of Fe clusters could be obtained for a long time, though for Ni and Co clusters, icosahedral structures were inferred from photoemission [108] and chemical reactivity [109] experiments. Recently extensive calculations [110] on Fe clusters showed the lowest energy structures to have high average magnetic moments of ∼3 μB/atom in a wide range of sizes in agreement with experiments. In an interesting i nding, Nb clusters were found [15] to have permanent electric dipole moments. hese dipole moments vanished beyond a certain temperature that was dependent on size. h is behavior of Nb clusters was interpreted to be related

4-16

Handbook of Nanophysics: Principles and Methods 3

3 344 Dipole moment (D)

Density of states per atom [arb. units]

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–10

–8

–6

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0

FIGURE 4.21 Calculated and experimental values of the electric dipole moments in Nb clusters. a and b show diferent isomers. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 65, 125403, 2002; Andersen, K.E. et al., Phys. Rev. Lett., 93, 246105, 2004; Andersen, K.E. et al., Phys. Rev. Lett., 95, 089901, 2005; Andersen, K.E. et al., Phys. Rev. B, 73, 125418, 2008. With permission.)

FIGURE 4.20 he electronic density of states of an octahedral Pt344 cluster. Also shown are the density of states of bulk Pt and (111) surface of bulk Pt (broken curve). he vertical line shows HOMO for Pt344 and the Fermi Energy for bulk. (Ater Kumar, V. and Kawazoe, Y., Phys. Rev. B, 77, 205418, 2008.)

to nascent superconductivity in Nb clusters with a transition temperature, which increased when the cluster size was reduced. Ab initio calculations [111] on Nb clusters showed the permanent dipole moments to be associated with the asymmetry in atomic structures. he calculated electric dipole moments on Nb clusters compare well with those obtained from experiments as shown in Figure 4.21. Some deviations in the values from experimental data are accounted from the fact that new isomers have been found [112] that are lower in energy and their electric dipole moments are closer to the measured values. As one encounters asymmetric structures oten in clusters, this phenomenon is not associated with only Nb clusters and is more general [113]. Nb clusters were also found to exhibit signiicant variation in their reactivity depending upon the charged state of the clusters [114] and in some cases such as Nb12, the possibility of the existence of isomers was concluded. For certain sizes, the dipole moments were found to be zero, indicating the possibility of a symmetric structure. For Nb12, ab initio calculations [115] suggested an icosahedral isomer to be lowest in energy and it behaves like a superatom. Similar results have been obtained for Ta12. hese clusters interact exohedrally with an oxygen atom (Figure 4.22) and endohedrally with Fe, Ru and Os as shown in Figure 4.23. Particularly superatoms M@X12 have been shown to be formed with M = Fe, Ru, and Os and X = Nb and Ta. In the case of oxygen interaction, an oxygen

FIGURE 4.22 Interaction of an oxygen atom on a face of an icosahedral Ta12 (top let). Top right shows the total electronic charge density while the bottom let (right) shows excess (depletion) of charge compared with the sum of the charge densities of Ta12 and an oxygen atom at the same positions as in Ta12O. One can see excess of charge around O atom from predominantly neighboring Ta atoms.

Design of Nanomaterials by Computer Simulations

4-17

4.5.1 Novel Structures of CdSe Nanoparticles

FIGURE 4.23 Interaction of an Os atom at the center of an icosahedral Ta12 (top let). Top right shows the total electronic charge density while the bottom let (right) shows excess (depletion) of charge compared with the sum of the charge densities of Ta12 and an Os atom at the same positions as in Ta12Os. One can see excess of charge around Os atom and to the d z2 orbitals on Ta atoms from the icosahedral shell of Ta atoms.

atom was placed inside an icosahedron, but it came out of the cage. here is charge transfer to oxygen from predominantly neighboring Ta atoms. On the other hand, an Os atom inside the cage leads to a highly symmetric icosahedral superatom. here is charge transfer to Os atom and to the d z2 type orbitals on Ta atoms from the Ta cage. hese results have shown that it is also possible to have superatoms of transition metals with large HOMO–LUMO gaps though the atoms have open d-shells. Similar studies have been made on M@Pd12 and M@Pt12 as well as on large core-shell structures to i nd diferent structures of Pd and Pt and to understand their reactivity.

Clusters of II–VI compounds have attracted great interest because of their interesting optical properties and possibilities of many applications in devices. Several studies on CdSe nanoparticles reported magic nature of clusters of about 1.5 nm size and they were considered [116] to be fragments of bulk CdSe but precise composition was lacking. It was in 2004 that nanoparticles of CdSe with precise composition of (CdSe)33 and (CdSe)34 were produced in macroscopic quantities [117] and characterized using mass spectrometry. High abundance of ZnS clusters was also reported independently by Martin [118] in this size range. Other clusters that were observed in the mass spectrum [117] of CdSe were (CdSe)13 and (CdSe)19 with much less abundance. here was almost no abundance of other clusters/nanoparticles. h is identiication of the number of Cd and Se atoms was used to understand the atomic structures of these clusters. Extensive calculations on a wide range of cluster sizes showed preference for novel cage structures of (CdSe)13 and (CdSe)34 in which one CdSe molecule is incorporated in a cubic cage of (CdSe)12 analogous to that of (BN)12 with a Se atom at the center and a (CdSe)6 cluster is encapsulated within a (CdSe)28 cubic cage so that there is covalent bonding not only on the cage as in BN cages but also within the cage (see Figure 4.24). Similar to silicon, as one goes down in the periodic table, empty cage structures become less favorable in these compounds unlike that of carbon or BN and stufed cages become lowest in energy. hese novel structures have lower energy as compared to those obtained from optimization of bulk fragments [119], some of which attain features similar to those of the lowest energy structure. he endohedral i lling of the cages weakens the dangling bonds on the surface. Subsequent studies [120] on the optical properties of these clusters have supported these structures. hese i ndings have opened a new way in the understanding of the properties of nanoparticles of II–VI compounds. While in these experiments bulk stoichiometric clusters were obtained, it is quite possible that under diferent conditions, other stoichiometries may also exist.

4.5 Nanostructures of Compounds Mixing of elements is an important way to modify properties of materials and there are a large variety of compounds such as oxides, sulides, borides, nitrides, and silicides and II–VI and III–V compounds that are technologically important. Nanomaterials of compounds may have stoichiometries and structures that are diferent from bulk and therefore it would be important to understand them and know the behavior and properties of such materials when they are made small. Here we discuss some examples that demonstrate the point.

FIGURE 4.24 Lowest energy structures of (let) (CdSe)13 (right) (CdSe)34. Dark (on the cage) and light (inside the cage) atoms represent Se while white (on the cage) and light dark (inside the cage) balls represent Cd atoms. (Ater Kasuya, A. et al., Nat. Mater., 3, 99, 2004. With permission.)

4-18

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Bulk MoS2 has layered structure similar to graphite and is useful as a lubricant. here has been interest in the possibilities of fullerene structures of MoS2 and WS2 and onion-shaped fullerenes [121] as well as multiwall tubular structures [122] have been obtained. In bulk form, Mo–S is very versatile and compounds with stoichiometries of MoS2, Mo2S3, and MoS3 are known to exist. Also a large number of cluster compounds have been synthesized such as Chevrel phases [123] with Mo 6S8 clusters and other compounds in which such clusters condense to form i nite and ini nite chains. Also LiMoSe bulk structure [124] was discovered long ago. In this phase, ini nite nanowires of MoSe condense to form a bulk phase in which Li intercalates between the nanowires. Such a phase has been considered interesting for Li ion battery applications. In recent years, another interesting application of nanoparticles of Mo–S system in the form of platelets has been found [125] in the removal of sulfur in petroleum rei ning. Recently, Murugan et al. [126] have studied bulk fragments of MoS2 and found a tendency for clustering of Mo atoms, which form a core while S atoms cap this core. he optimized structures of bulk fragments were found to lie signiicantly higher in energy than other isomers in which S atoms prefer to cap a face or an edge of a Mo polyhedron and the remaining atoms occupy terminal positions on the vertices. For two and three Mo atoms, edge capping is favored but for larger clusters, face capping becomes generally more favorable. he stability of these structures was understood from d-s-p hybrids, which prefer bond angles of 73°09′ and 133°37′ and which are also found in bulk MoS2 (angles 82° and 136°) as well as from s-d hybrids, which favor bond angles 116°34′ and 63°26′. Extensive calculations [127] on Mo nS m clusters showed a hill-shaped structure of the energy versus sulfur concentration as shown in Figure 4.25 for Mo 4S m series so that there is an optimal composition of S:Mo that has the highest binding energy. Accordingly, it was found that the optimal stoichiometry of small Mo–S clusters has S:Mo ratio of less than 2 (except for n = 1 and 2) such as in Mo3S5, Mo4S 6, and Mo 6S8. Among these, it was found that Mo6S8 has special stability and this i nding goes well with the occurrence of Mo 6S8 cluster compounds. Further calculations on larger clusters showed that nanowire-like structures in which such Mo 6S8 clusters condense, such as in Mo9S11 and Mo12S14, (Figure 4.26) were more favorable than other 3D structures [128]. Such i nite chains are also found in bulk compounds. In the limit of n tending to ini nity, one obtains an ini nite MoS nanowire, which is metallic. Such nanowires have been formed in the laboratory [129] and their properties have been manipulated by I doping. In contrast to carbon nanotubes, which are produced with different diameters and chiralities that lead to diferent properties, MoS nanowires can be produced uniquely with ease and therefore these one-dimensional conductors could be useful in developing contacts in devices at the nanoscale. Hexagonal

BE [eV/atom]

4.5.2 Nanostructures of Mo–S: Clusters, Platelets, and Nanowires

Handbook of Nanophysics: Principles and Methods

3.0 2.5 2.0

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n

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FIGURE 4.25 (Top) he variation in the binding energy of Mo 4 S m clusters as m is varied. he highest binding energy is achieved for Mo 4S 6, which is a magic structure and has the largest HOMO–LUMO gap in this series. he magnetic moment on this cluster is zero, but some of the other clusters become magnetic. (Bottom) he variation in the binding energy as the mass of the clusters is varied representing diferent combinations. Some of the cluster stoichiometries have been listed in the igure corresponding to locally high binding energies, the highest value being for Mo 6S 8. he optimal stoichiometry m/n changes from about 3 to 1.5 as the cluster size grows and therefore in the small size range the optimal stoichiometries are diferent from the bulk phases. (Ater Murugan, P. et al., J. Phys. Chem. A, 111, 2778, 2007. With permission.)

assemblies (Figure 4.27) of such nanowires have been shown [130] to be weakly bonded. An interesting i nding is that such assemblies can be intercalated with Li and this leads to further metallization of this assembly. It has been suggested that such assemblies could be interesting one-dimensional electron and ion conductors and may have potential application as cathode material for 1.5 V Li ion batteries in which the change in the structure of the material when Li goes in and out could be much smaller as compared to the presently used LiCoO2 cathode material. Also a new metallic phase of the Li3Mo6S6 nanowire assemblies was predicted from ab initio calculations with monoclinic structure.

4-19 5.3

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Design of Nanomaterials by Computer Simulations

10 11

FIGURE 4.26 (a) Part of an ini nite MoS nanowire. Dark (light) balls represent Mo (S) atoms. (b) Plot of the binding energy and HOMO–LUMO gap as the number n of (MoS)3 is increased. (Ater Murugan, P. et al., Nano Lett., 7, 2214, 2007. With permission.) –0.25 +0.25 1 2

2

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FIGURE 4.27 A hexagonal assembly of MoS nanowires which is intercalated with Li. (a) and (b) correspond to Li2MoS and Li3MoS intercalated assemblies. (c) he change in the binding energy of pristine MoS nanowire assemblies as well as those of Li-doped for varying Li concentration x as the internanowire spacing is changed. For x = 0, the variation is very lat due to very weak van der Waals bonding which is not well described within GGA. However, with increasing x, the system develops more metallic bonding. (Ater Murugan, P. et al., Appl. Phys. Lett., 92, 203112, 2008. With permission.)

4.6 Summary In summary, we have presented results of some recent developments related to clusters and nanoparticles of metals and semiconductors where calculations played a very important role such as the discovery of silicon fullerenes and other novel polyhedral caged structures by metal encapsulation, some of which have been subsequently realized in laboratory. Metal encapsulation provides a novel way to produce size-selected species in high abundance, which are required for their applications.

he properties can be tailored by choosing the right combination of the metal atom. his idea is not speciic to Si and can be applied to other semiconductors and metals to produce sizeselected species with speciic properties. Indeed 18 valence electron magic clusters of Cu and other coinage metals stabilized with transition metal atoms are examples of metal-encapsulated clusters of metals. Also, we presented results of high-symmetry icosahedral magic clusters of transition metals such as M@Nb12 and M@Ta12 with M = Fe, Ru, and Os that are promising for

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cluster assembly. As we go down in the periodic table in a column, some interesting trends are found. For elements such as C and compound BN, empty cage fullerene structures are favored while for Si and II–VI compounds such as CdSe stufed cage structures become more favorable as we discussed for (CdSe)13 and (CdSe)34. So there is tendency to have tetrahedral bonding not only on the cage but also inside the cage. On the other hand, for metals such as Ni, Pd, and Pt or Cu, Ag, and Au, or Co and Rh, as one goes down in a column in the periodic table, small clusters have a tendency to change from close-packed icosahedral structures (e.g., for Co, Ni, Cu) to relatively open structures such as we discussed for Rh, Pt, and Au. Also by alloying of Au with Al, empty fullerene cage structures have been found and this development could further act as a catalyst to look for such novel structures of other compounds. Nanogold is a good catalyst and by alloying, one can tailor its structure and properties. Further nanostructures of Rh and Pt develop magnetism though bulk Rh and Pt are nonmagnetic. he properties of these catalytically important clusters can be further tailored by doping that can make drastic changes in the structure and properties similar to Si. his ield has not been well explored and ab initio calculations are expected to contribute to such developments and to their applications. he hydrogenated cages of Si ofer interesting possibilities of endohedral doping of atoms to produce slaved atoms with free atom-like behavior and also to have derivatives by replacement of H atoms. We also discussed nanoclusters of Mo–S that have diferent stoichiometries from bulk and a tendency to have Mo polyhedral core and S atoms outside the core. Among these, Mo6S8 is very special and one can have assemblies in the form of inite and ininite nanowires that have potential as conductors in nanodevices. Also assemblies of such nanowires are potential electron and ion conductors such as with Li doping. We also discussed the developments related to the inding of nanotube structures of Si, which are also metallic. hese results have shown the possibility of stabilizing sp2-bonded structures of Si and with the current excitement in research on graphene, such sp2-bonded Si nanostructures and silicene, an analog of graphene, could become very interesting. Some of the examples discussed here demonstrate the great potential of computer simulations in developing new materials and structures for nanotechnology applications and we hope that exciting discoveries would be made in the near future using computer simulations and that would expedite material development.

Acknowledgments I would like to express my gratitude to Y. Kawazoe for all the support and cooperation at the Institute for Materials Research (IMR), Tohoku University. I am thankful to Y.-C. Bae, R.V. Belosludov, T.M. Briere, M. Itoh, A. Kasuya, H. Kawamura, C. Majumder, P. Murugan, N. Ota, F. Pichierri, A.K. Singh, M.H.F. Sluiter, and V. Sundararajan for fruitful collaborations and many discussions. I gratefully acknowledge the support of the staf of the Center for Computational Materials Science of IMR-Tohoku

Handbook of Nanophysics: Principles and Methods

University for the use of SR8000/H64 supercomputer facilities, the computing facilities at RICS, AIST, Tsukuba, the support of K. Terakura and T. Ikeshoji as well as the staf of the Centre for the Development of Advanced Computing, Bangalore for allowing the use of their supercomputing facilities and excellent support. I acknowledge with sincere thanks the i nancial support from the Asian Oice of Aerospace Research and Development.

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5 Predicting Nanocluster Structures

John D. Head University of Hawaii

5.1 Introduction ............................................................................................................................. 5-1 5.2 Cluster Structural Features on the Potential Energy Surface ...........................................5-2 5.3 Considerations in Cluster Energy Calculations.................................................................. 5-3 5.4 Computational Approach to Finding a Global Minimum................................................5-4 5.5 Example Applications: Predicting Structures of Passivated Si Clusters .........................5-6 5.6 Summary ................................................................................................................................. 5-10 Acknowledgments ............................................................................................................................. 5-10 References........................................................................................................................................... 5-10

5.1 Introduction he chances of systematically making new nanoclusters with interesting and technologically useful chemical and physical properties will be greatly improved if detailed knowledge of the arrangement of atoms forming speciic nanoclusters is readily available. he aim of this chapter is to provide an overview of diferent theoretical approaches currently being used to predict the structural properties of nanoclusters. Generally, good quality ab initio techniques, such as density functional theory (DFT) calculations, are able to produce structural models consistent with experimentally measured structures [1,2]. he stable cluster models predicted by theory are oten an essential ingredient to interpreting the experimental data obtained by various experimental methods used to analyze the structure of nanoclusters. Since several chapters in this series provide an overview of the many diferent experimental methods such as powder dif raction, various microscopies, and spectroscopic techniques available to probe the structural properties of clusters, we do not discuss experimental methods in this chapter. he diferent theoretical methods to predict the nanocluster structure described in this chapter all involve inding a local minimum on a potential energy surface (PES) expressed as a function of the component atom positions. We equate the most stable nanocluster to be the structure that has the lowest energy and corresponds to the global minimum (GM) on the PES. he PES is obtained by assuming the Born–Oppenheimer approximation enables a valid separation between the electronic and nuclear motions. A common theme to this chapter is that the challenge to predicting nanocluster structures is due to the PES, even for a relatively small molecule or cluster, being able to accommodate a huge number of local minima. For instance, diferent isomers of a simple organic molecule, such as ethanol

C2H5OH and dimethyl ether CH3OCH3, are an example of the many diferent local minima present on a PES for a speciic chemical composition. Organic chemists are able to isolate and characterize the two isomers separately because of the large energy barrier on the PES that causes the kinetics of their interconversion to be slow. Similarly, a molecule, such as n-propanol, CH3CH2CH2OH, does not spontaneously convert to an ether because of the large energy barrier separating the two isomers. However, the diferent conformers formed as a result of rotations about the diferent C–C bonds in n-propanol produce a region in the PES consisting of several local minima similar in energy but with only small energy barriers separating the diferent minima. hese low-energy barriers enable the diferent n-propanol conformers to establish a thermodynamic equilibrium where the structures are populated according to a Boltzmann distribution. he topology of how the local minima are distributed on a PES will inluence the theoretical method used to predict the stable structure for a nanocluster. he PES of nanoclusters will have similar features as that for the organic molecules described above. We need a combination of both a local minimizer and the global optimizer to predict the most stable structure for a cluster. In this chapter, we focus on methods that predict the structure of lowest energy cluster on the PES since this will correspond to the most stable cluster structure at low temperature. Determining this most stable cluster structure necessitates computing the total energy of the cluster at many diferent geometries. he computer time needed to perform all of these cluster calculations with a good quality DFT calculations is prohibitive. Consequently, less rigorous energy calculations are typically used to prescreen the diferent cluster structures for possible low-energy structures before performing good quality DFT calculations on a subset of the candidate cluster structures, which are expected to contain the ab initio GM structure. he remainder of this chapter describes the steps for predicting the 5-1

5-2

Handbook of Nanophysics: Principles and Methods

most stable cluster structure in more detail. Section 5.2 summarizes the properties of the PES and describes how local minima and the GM relate to the most stable structure of a cluster. h is section also outlines how to perform a local geometry optimization and introduces the idea of a catchment region around each local minimum. Section 5.3 gives an overview of the different potentials functions available for calculating the cluster energies and their relative computational demands. hen, we present three of the common strategies for performing a global optimization to i nd the most stable cluster structure in Section 5.4. Examples of predicting nanocluster structures are given in Section 5.5 where we also describe speciically some of the work by our group on ligand-passivated silicon nanoclusters. Summary and concluding remarks are contained in the last section of the chapter.

5.2 Cluster Structural Features on the Potential Energy Surface Within the Born–Oppenheimer approximation, the PES E(x) is expressed as a function of the positions of the N nuclei making up the cluster where x is a column vector containing the 3N coordinates. x † = (x1 y1 z1 … x N y N z N ) Figure 5.1 shows a hypothetical PES for a cluster where the cluster energy E is plotted against some reaction coordinate Q, which would have a complex functional dependence on the cluster coordinates x. he energy of a cluster with geometry x 2 on the

LM

GM

FIGURE 5.1 Schematic PES (in gray) for a cluster showing the global minimum (GM) and the kth lowest energy local minimum (LMk). he transformed PES (in black) is used by the basin hopping and genetic algorithm approach to global optimization. he extent of the catchment region around each local minimum is indicated by the horizontal lines in the transformed PES.

PES can be related to the energy at a diferent position x1 by the Taylor series expansion E(x 2 ) = E(x 1 ) + g(x 1 )† Δ + 1/2Δ †G(x 1 )Δ + higher order terms where Δ = x 2 − x1 is the displacement vector g(x1) is the gradient vector G(x1) is the second derivative or Hessian matrix both evaluated at x1 he elements of the gradient vector and Hessian matrix are g(x1 )i =

G(x 1 )ij =

∂E ∂x i

x1

∂E ∂x i ∂x j

x1

A stationary point on the PES is deined as a position x* where the gradient vector is zero. g(x*) = 0 Each stationary point is further characterized by the eigenvalues of the Hessian matrix G. For a nonlinear cluster, six of the Hessian matrix eigenvalues can be associated with the three translational and three rotational degrees of freedom, and the remaining 3N − 6 eigenvalues correspond to vibrational motions of the cluster and are used to classify the nature of the stationary point. A local minimum has 3N − 6 positive eigenvalues in the Hessian, which give rise to 3N − 6 real vibrational frequencies. A irst-order stationary point with a maximum in one direction is a proper transition state and the Hessian matrix has one negative eigenvalue, which gives rise to one imaginary and 3N − 7 real vibrational frequencies. Second and higher order stationary points with maxima in several directions contain several negative eigenvalues in the Hessian matrix and are not usually chemically important. he energy at transition state geometries provide the lowest energy pathway connecting two diferent local minima. here is never a reaction pathway passing over a second or higher order stationary point since there is always a lower energy pathway involving a transition state structure available instead. he schematic cluster PES in Figure 5.1 illustrates a collection of many diferent local minima separated from each other by the lowest energy maximum along the reaction coordinate Q corresponding to a transition state or irst-order stationary point. Figure 5.1 shows the PES has only one GM and this is the local minimum with lowest energy. Apart from being at the lowest energy on the PES, the GM has no special properties which distinguish it from the other local minima. he computational diiculty with correctly locating the GM arises because the number of stationary points on a PES grows exponentially with cluster size [5,6].

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Predicting Nanocluster Structures

Finding the local minimum on a PES is now a fairly straightforward task [1,2]. Typically a gradient-based quasi-Newton method is used to ind step directions Δ toward a local minimum Δ = −Hg(xold ) where an approximation to the inverse Hessian matrix H ≈ G−1 is formed via an update formula using the g vectors calculated at previous cluster geometries used in the earlier geometry optimization cycles. he limited memory L-BFGS update formula is usually the one of choice because H remains positive deinite for each update at the diferent geometries used in the local optimization [3]. he new geometry x new used in the energy and gradient calculation is obtained via xnew = xold + αΔ with α usually chosen to be unity unless Δ causes unphysically large coordinate changes. An important concept to appreciate is that the PES can be divided into catchment regions around each of the various local minima [4]. he horizontal lines in Figure 5.1 depict the range of the catchment region associated with each local minimum. If the kth local minimum LMk has the geome try x*k, then a local minimization starting from some initial geometry x init, which is inside the catchment region associated with the kth local minimum, will optimize to the x*k geometry. his means that if one assumes a speciic structural motif in an initial cluster structure, then the optimized structure would be a local minimum containing the same structural motif. A related consequence is that the point group symmetry of an initial cluster geometry is conserved throughout the optimization cycles; this can cause the geometry of the optimized cluster at the stationary point to have extra symmetry and not be a proper local minimum with 3N − 6 real vibrational frequencies. he presence of a catchment region around each local minimum means that searching for the lowest energy, or GM, cluster structure is more complicated than a local geometry optimization, where now the energies of many diferent local minima need to be computed and compared.

5.3 Considerations in Cluster Energy Calculations Predicting the most stable structure for a nanocluster requires that a large number of total energy calculations are performed at diferent cluster geometries. he goal of the quantum chemist is to perform these calculations at a suitable level of theory to produce a stable structure, which is expected to match reasonably well with an experimentally observed structure data. However, as soon as the size of the cluster exceeds 20 or so atoms, it becomes computationally impractical to use high-quality quantum chemical methods, such as DFT, to perform local geometry optimizations on a large number of cluster structures. Consequently,

a lot of cluster structure studies have been performed using approximate or empirical potentials enabling the total energy of a cluster geometry to be evaluated in a fraction of a second rather than on the order of many minutes required by a DFT calculation. he GM cluster structures obtained by using approximate energy potentials can be intrinsically interesting as they can give valuable insights into the structural trends a nanocluster can adopt with increasing cluster size. he approximate energy potentials are also a useful tool for evaluating the efectiveness of diferent global optimization algorithms. Alternatively, an approximate energy potential can be used as prescreening tool, which identiies several structures as candidate clusters having low DFT energies, thereby enabling the GM at the DFT level to be identiied without performing a huge number of high-quality quantum chemistry calculations. he Lennard-Jones potential is probably the simplest potential N

VLJ (x) = 4⑀

∑ i< j

⎡⎛ ⎞ 12 ⎢⎜ σ ⎟ − ⎢⎝ rij ⎠ ⎣

6 ⎛ σ⎞ ⎤ ⎜ r ⎟ ⎥⎥ ⎝ ij ⎠ ⎦

where ϵ and 21/6 σ are the pair well depth and equilibrium separation [7]. he GM of (LJ)n clusters, where the cluster energy is evaluated using the LJ potential, has been found for clusters with up to 1000 atoms [8,9]. To more realistically model the structure of metal and alloy clusters, potentials that go beyond the simple pairwise interactions of an LJ potential are needed. he potentials in the embedded atom method (EAM) [10,11] and the second-moment approximation to tight binding (SMATB) methods [12,13] have been used for these types of systems. Alternatively, for silicon clusters, where there is an extensive network of covalent bonding, several groups [14–17] have used the semiempirical density functional tight binding (DFTB) method [18–20]. In our own work on passivated Si clusters, we found the semiempirical AM1 method [21,22] as another very fast way for calculating the total energy of a cluster. he main advantage of the approximate energy calculations is that they allow many diferent cluster total energy calculations to be performed. he topology of the PES derived from an empirical potential is also likely to be smoother than a PES produced by DFT calculations, and this smoother PES aids in making the search for the cluster GM easier [23,24]. However, it is well known that the global minima theoretically predicted for a cluster will depend on the energy function used in the calculation [25,26]. h is is further illustrated by the recent global optimization studies of Au 20 clusters using DFT calculations directly which i nd the DFT calculations to consistently give the most stable structure that is quite diferent from those previously predicted by using various empirical Au potentials [27]. Using the lowest energy empirical structures as candidates for starting structures in DFT calculations is also troublesome. For example, performing DFT local minimizations on the 100 lowest energy clusters obtained via the empirical potential calculations produced the lowest energy Au 20 cluster that

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was still 1.68 eV above the DFT GM cluster energy [27]. One approach around this problem, which depends on the lexibility of parameters in the empirical potential, is to i ne-tune the parameters in the empirical potential to produce low-energy structures that are more consistent with the DFT GM. We have performed this type of parameter tuning in our global optimization studies of Si xHy clusters. We originally used the standard Si and H AM1 parameters [21,22] and developed a genetic algorithm (GA) to globally optimize diferent Si10Hy clusters with y = 4, 8, 12, 16, and 20 [28]. We originally picked the AM1 method because we felt it gave better optimized structures and energies for the various Si xHy clusters than other semiempirical methods such as PM3. Our global optimization calculations on Si10H16 using AM1 gave a very diferent GM to what we now ind with both MP2 and DFT calculations [30,31]. AM1 produces the ab initio GM as the 10th lowest energy structure. As we performed MP2 and DFT calculations on the diferent low-energy AM1 structures, we realized we were generating a library of optimized structures and energies, which could be used to reparametrize the AM1 method. his lead to our reparametrized GAM1 method, where we kept the same AM1 equations but modiied the parameters to predict GM structures just like those we ind from ab initio calculations [30,31]. Truhlar and coworkers have used the term speciic reaction (or range) parameters (SRP) for this type of approach where the parameters for an approximate method are adjusted to better reproduce the energies for a speciic system [32].

5.4 Computational Approach to Finding a Global Minimum As noted previously, the major diiculty in inding the GM structure for a nanocluster is due to the exponential growth of the number of stationary points on the PES with cluster size [5,6]. A second problem is due to the GM not having any special properties, apart from being at the lowest energy, which can be used to distinguish it readily from all the other local minima on the PES. One common approach to inding the GM is to simply use chemical intuition to guess at the lowest energy structure for a cluster. A set containing several initial cluster structures are selected on the basis that they are expected to be chemically reasonable. Out of this set of structures, the GM is taken to be the lowest energy structure found ater performing a local geometry optimization on each of the initial guess structures. he obvious drawback to this approach is that if you do not guess at an initial structure, which is in the catchment region around the GM, then the locally optimized cluster structure found to have the lowest energy will not be the GM. An exhaustive search method tries to systemize this approach by generating a set of initial structures, which includes every structural possibility. For example, to ind the lowest energy conformer for a n-alkane one might assume that staggered arrangements of the alkyl groups attached to each C–C bond should give rise to three local minima. he exhaustive search would then require the local geometry optimization of 3m diferent initial structures where m is the number of C–C

Handbook of Nanophysics: Principles and Methods

bonds with R groups attached. Unfortunately, the exhaustive search approach can easily lead to an impractical huge number of diferent possible cluster structures; although for small clusters, point group and permutational symmetry may help to establish how many distinct initial structures need to be generated. Even when an exhaustive search is practical, the lowest energy structure obtained by the exhaustive search may still not be the correct GM if the underlying assumptions used to build the initial structures are lawed and fail to generate an initial structure inside the catchment region of the GM. Furthermore, all of the above methods are obviously going to fail if the most stable nanocluster is a consequence of some new unanticipated chemistry. A more appealing approach to predicting cluster structures is to use an unbiased search method, which does not depend on using any prior chemical notions of the stable structure. he simplest example of this approach is to perform local geometry optimizations using randomly generated initial structures. In the simplest implementation, a random number generator is used to generate the three Cartesian coordinates for each atom in a cube with volume a3 where a controls the density of the cluster formed. Any tendency to form cubic clusters can be avoided by randomly putting atoms in a sphere, as described by Press et al. [39]. One drawback to these randomly generated structures is that the probability of generating a new atom position unphysically close to an existing atom position increases with the number of atoms already selected to be in the cluster. However, since many diferent random structures for small clusters can rapidly be generated on a computer, problem structures can be ignored from further consideration when either two atoms are unphysically close together or the calculation of the initial cluster’s energy fails to converge. While performing local geometry optimization on these random initial clusters avoids introducing any chemical bias into the search, again the major drawback is that many energy calculations are needed on many diferent cluster geometries in order to have conidence that the true GM is being correctly located. A more eicient approach that requires fewer cluster energy calculations is to have an algorithm that modiies the initial guesses at a cluster’s low-energy structures and then explores whether these modiied structures have lower energy. Such algorithms should be independent of any chemical bias. In the remainder of this section, we describe simulated annealing, basin hopping, and genetic algorithms as three examples of such methods. We refer the reader to the book by Wales [33] and the review articles by Hartke [34], Johnston [35], and Springborg [36] for discussion of other promising global optimization methods. One useful feature of all three methods is that they all can be started by using either the randomly generated clusters described in the previous paragraph, or they could be applied to a series of cluster structures initially generated using chemical intuition, or by using a combination of both structural types. Simulated annealing (SA) is an algorithm that is analogous to the physical process taking place when a liquid cools to form a crystalline solid [37]. Ater picking an initial cluster geometry x1

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Predicting Nanocluster Structures

and computing the cluster energy E1 = E(x1), the following iterative steps are performed for several cycles at temperature T: 1. Make a random move to a new geometry x 2 = x1 + Δ 2. Evaluate new cluster energy E2 = E(x 2) 3. Accept new geometry and set x1 to x 2 if p < exp[−(E2 − E1)/ kT] where p ∈ (0, 1) is a random probability of acceptance A new geometry is always accepted when E2 < E1 and the initial temperature needs to be high enough to allow the geometry changes Δ to cross between catchment regions of diferent local minima. Ater several successful coordinate moves, the temperature T should be lowered. Cycling through random coordinate moves and lowering the temperature are repeated until changes in the cluster energy become small. It is both the number of needed coordinate moves and the rate of temperature lowering that determine whether the SA algorithm can actually ind the lowest energy structure of a cluster. Too fast a cooling can cause a cluster structure, which has high energy barrier separating it from other lower energy structures, to become trapped in a local minimum [33,38]. Press et al. have also pointed out that the algorithm could be more eicient if the random move Δ took into account the availability of any downhill moves [39]. With such an approach, SA becomes very similar to the basin hopping algorithm discussed next. Basin hopping (BH) is similar to SA except that it eliminates the energy barriers separating local minimum by transforming the PES into a collection of constant energy plateaus or basins dei ned by the energies of the diferent local minima [40,41]. Figure 5.1 illustrates this idea and the extent of the constant energy plateau is set by the size of the catchment region around each local minimum. he transformed cluster energy at position x is

he temperature controls the probability of allowing E2 to be greater than E1 and is dynamically adjusted to allow some prescribed acceptance ratio [41]. In order to hop between diferent basins, Δ needs to be relatively large with maximum displacements being one-third of the average near neighbor distance. he local minimization is best performed using a quasi-Newton method such as the L-BFGS algorithm [3] and requires several energy and gradient evaluations before x*2 is located. Genetic algorithm (GA) is a global optimization strategy inspired by the Darwinian evolution process. he GA works by randomly selecting and mating the more it individuals in a generation to produce the next generation of ofspring, where the itness is some measure of the energetic stability for an individual cluster structure. he GM is eventually located because some of the new cluster conformations created by the GA have lower energies than the structures in previous generations. A good mating operator causes good structural features in a cluster to be passed to the next generation while maintaining structural diversity in the overall population. A irst problem is how to encode the cluster representation into a form usable by a computer. he early GAs performed the genetic operations of mating and mutation on binary strings, which map in some way to the cluster geometry. In 1995, Deaven and Ho [42] introduced crossover and mutation operators, which worked directly on the clusters in real coordinate space. What we call the cut-and-paste operator in our work is the Deaven and Ho crossover method, which is shown in Figure 5.2, where two parent clusters are cut into halves along randomly orientated planes and the two halves from diferent parents are combined

Random

Eɶ(x ) = min[E(x )] = E(x *) where x* are the optimized coordinates of the local minimum and min[E(x)] signiies getting the energy from a local optimization, which is started with the initial coordinates x. Typically, once the structure x* of the local minimum is found, the initial coordinates x are reset to this geometry. Some initial cluster structure x1 is selected and locally optimized to give

Cut Paste

Parent A

Locally Optimize Offspring Paste

E1 = Eɶ(x1 ) Random

and x 1 = x*1 . hen diferent cluster structures are iteratively examined by 1. Making a random move to a new geometry x 2 = x1 + Δ 2. Evaluating the new transformed cluster energy E2 = Eɶ(x 2 ) by performing a local minimization and resetting x 2 to the optimized structure x*2 3. Accepting new geometry and setting x1 to x 2 if p < exp[−(E2 − Ei)/kT] where p ∈ (0, 1) is a random probability of acceptance

Cut

Parent B

FIGURE 5.2 Example of the Deavon and Ho [42] cut-and-paste GA operator applied to Si6H6 clusters. he two parents A and B are randomly orientated and cut in half. he cluster halves are pasted together to produce a new cluster, which is then locally optimized to produce the ofspring cluster for use in the next generation of the GA.

5-6

to give an ofspring structure. Some version of the Deaven and Ho crossover operator is now used in most of the current cluster GA methods [35]. Another important idea from Deaven and Ho was to perform a gradient-driven local geometry optimization of each new cluster generated ater crossover or mating [42]. he local geometry optimization is similar to the idea used in basin hopping methods and provides the ability to jump between different catchment regions around local minima without needing the energy to pass over any intervening barriers [40]. Typically, a cluster GA starts with N randomly generated clusters whose geometries are locally geometry optimized to produce the initial ancestor population, where N depends on the size of the cluster. he clusters’ total energy is then used to assign a itness to each cluster, with the lower energy clusters being assigned higher itness. In tournament selection, several parents are initially selected randomly, and from this population subset, the two ittest parents are mated to produce ofspring. he next generation of clusters is then formed by performing a local geometry optimization on each ofspring and then verifying that the optimized ofspring is not identical with any of the clusters already included in the new population. A simple approach for deciding if the new ofspring is identical with a previous individual is to compare whether their total energies and the three principal moments of inertia all agree within some threshold [30]. he GA is then run to produce several generations of cluster populations. Judging when the GA is converged, and the GM found can be challenging with the simplest approach being that no new cluster with lower energy than the GM is found for several generations. Several diferent GA runs using diferent seeds in the random number generator and diferent initial random cluster geometries also serve as a consistency check that a unique GM structure is found for the cluster. Typically, the mating methods used in the GA should keep the good features of the better (lower energy) parents while some mutations are performed to help maintain the variety of diferent cluster structural types in the population. For instance, in addition to the Deaven and Ho cut-and-paste operator for combining two parents, Rata et al. [17] in the global optimization of Si-only clusters mutated a cluster by applying the cut-andpaste operator on a single parent. Alternatively, a simple coordinate averaging operator that takes the arithmetic mean of the Cartesian coordinates from two parent clusters can be used to generate an ofspring with a new random geometry. Although this new cluster geometry may or may not have a low energy and be physically important, the coordinate averaging operator helps to maintain the structural diversity for the population of clusters in the GA. he advantage of the above mating operators is that they are simple to implement and avoid introducing any chemical bonding biases into the GM determination. However, such general GA operators may not be very eicient at forming a structure which resembles the GM. For instance, we found the search to ind the Si6H6 and Si14H20 GM using general GA operators to be slow. We were able to make the GM search much faster by developing the genetic operators, which essentially mimic chemical

Handbook of Nanophysics: Principles and Methods

transformations, such as the shit of H atoms between other vacant Si sites, or cause a surface SiH3 group to be removed from or inserted into a Si–Si bond ring [31]. he GA enables these chemical transformations to take place without being concerned that there might be large energy barriers, which would normally prohibit the reaction occurring in the real chemical system. hese operations can be thought of as analogues to the add/etch operations which Wolf and Landman used in their global optimization studies of large Lennard-Jones clusters [68]. he covalent bonding network ubiquitous to Si xHy clusters makes implementing the add/etch operations more diicult and requires that each Si atom be assigned a functional group identiication, which we simply determine through connectivity information obtained from the internuclear separation matrix. While SA is still used in a number of applications [47], it does sufer from the drawback of sometimes getting trapped in a local minimum above the correct GM when there are large energy barriers separating the diferent local minima. Both BH and GA circumvent this problem by accepting coordinate displacements based on energies evaluated at the local minimum rather than the energies determined in the region associated with the high energy barrier. BH is probably the easier method to implement for a general nanocluster, such as A xBy, which is composed of several diferent atom types. Our longer discussion of the GA method illustrates that implementing the genetic operators in a GA is more dependent on the type of cluster being globally optimized. For instance, the GA cut-and-paste operator to two diferent parent A xBy clusters requires an implementation where a A x–mBy–n fragment from one parent is combined with a AmBn fragment from the other parent. However, one attractive feature of the GA is being able include a high degree of structural diversity in the parent cluster population thereby ensuring the energies of broad range of diferent local minima are compared. For instance, the third lowest energy local minimum, LM3, on the hypothetical cluster PES, shown on the let-hand side of Figure 5.1, appears to be well separated from GM at the righthand side of Figure 5.1. he BH algorithm is likely to spend many cycles exploring diferent geometries around LM3 while the population of cluster structures in the GA can be in the vicinity of the GM and LM3. Several groups have analyzed the topological characteristics on a PES such as the distribution of local minima and the heights of the energy barriers separating them to serve as a guide in determining the most eicient global optimization strategy [33,48].

5.5 Example Applications: Predicting Structures of Passivated Si Clusters heoretical prediction of the most stable structure has now been applied to many diferent nanocluster systems. In the next paragraph, we present a brief overview of some of the recent review articles and the Cambridge Cluster Database, which describe example applications of global optimization methods on various nanocluster systems. In the remainder of this section, we try to illustrate the utility of global optimization methods by

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Predicting Nanocluster Structures

describing our work aimed at inding the DFT GM of ligandpassivated silicon Si xLy clusters [28–31,43,44]. he Cambridge Cluster Database [8] and the recent book by Wales [33] both contain an extensive compendium of many different globally optimized nanoclusters. hese two sources list the GM for a large collection of diferent-size elemental clusters, water clusters, alkali halide clusters, and fullerenes and silicon clusters where the GMs are determined using several diferent potential functions. Baletto and Ferrando provide an extensive review of various metal atom clusters, including Au, Ag, Cu, Pt, Pd, and Ni atoms in their recent review of structural properties of nanoclusters: energetic, thermodynamic, and kinetic efects [45]. Recently, Ferrando, Jellinek, and Johnston extensively reviewed the stable structures of bimetallic alloy clusters of the type A xBy where A and B are two diferent metal atoms and even discussed an example of a trimetallic onion-like cluster AucoreAgshellCushell [46]. Determining the stable structures for a nanoalloy cluster is made diicult because one needs to predict the preferred mixing pattern between the constituent atoms in the alloy. Figure 5.3 shows the four main mixing patterns found in nanoalloys and the search for the nanocluster GM is extremely challenging since a completely diferent cluster structure can be simply generated by permuting the positions of an A atom with a B atom. We have been developing a GA-based global optimization method to predict the stable structures of ligand-passivated silicon nanoclusters Si xLy. We expect this structure to have a Si x core encased in a shell of ligands Ly similar to the nanoalloy mixing pattern shown in Figure 5.3a. Our interest in passivated silicon clusters stems from the observation that nanometersized silicon clusters exhibit an intense photoluminescence (PL) and have the potential of being developed into a practical optoelectronic device [49,50]. he nanoparticles contrast with bulk

(a)

(c)

silicon, which shows a low-intensity PL since it is an indirect gap semiconductor. Quantum coninement [51,52] and surface efect [53] theories have been proposed to explain the mechanism of the PL in silicon clusters. Presumably, in a practical optoelectronic device, the nanometer-sized Si clusters need to be passivated by some air stable ligand. Several groups have used quantum chemistry calculations to calculate the optoelectronic properties for relatively large atomic and molecular clusters. For instance, Zhou, Friesner, and Brus (ZFB) recently used density functional theory (DFT) to calculate the electronic structure for 1–2 nm diameter silicon clusters as large as Si87H76 [54,55]. ZFB treated several diferent-sized Si clusters passivated by either H, oxide, OH, hydrocarbon, or F ligands. he calculations enable the characterization of single Si nanoparticles rather than the ensemble of particles with uncertain size ranges present in most real samples. In order to do these calculations, ZFB appear to make the chemically reasonable assumption that the most stable nanoclusters consist of a Si core with the same diamondlattice-like structure as found in bulk Si. ZFB then passivated dangling surface Si bonds of the diamond-lattice-like core with a ligand of interest and performed a full local optimization to get the geometry of speciic clusters. Degoli et al. make a similar diamond-lattice-like assumption in their ground and excited state calculations on clusters ranging from Si5H12 to Si35H36 [56]. Perhaps, some support for the likelihood of the Si nanocluster favoring a bulk Si-like core is provided by the recent report of the experimental synthesis and structure determination of silaadamantane [57]: a molecule which contains a Si10 cluster core with a bulk Si-like structure capped by 12 methyl and 4 trimethyl silyl groups. However, by examining the structure of Si xLy clusters outside the catchment region for the bulk-like Si core, we are able to show that the most stable geometric arrangement

(b)

(d)

FIGURE 5.3 Cross sections of possible atom mixing patterns in nanoalloys: (a) core-shell, (b) subcluster segregated, (c) mixed, and (d) three shell. (Adapted from Ferrando, R. et al., Chem. Rev., 108, 845, 2008. With permission.)

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Handbook of Nanophysics: Principles and Methods

of Si atoms in a nanocluster is dependent on the ligand that is used to passivate the cluster surface [43,44]. his is an important observation because the optical properties of the Si nanocluster should be dependent on the Si core structure. A number of diferent groups have attempted to ind the GM for various small Si xHy clusters using either approximate or highquality ab initio cluster energy calculations. he diferent locally optimized structures using high-level ab initio calculations used to identify the global minima for Si2H3 and Si2H4 are summarized in the recent work by Sari et al. [58] and Sillars et al. [59]. Chambreau et al. used local geometry optimizations and MP2 calculations to predict the geometries and relative stabilities of three Si6H and ive Si6H2 clusters by starting from geometries built by adding one or two H atoms onto the stable Si6 cluster with D4h symmetry [60]. Meleshko et al. have also attempted to identify global minima for various silicon hydride clusters using simulated annealing and the semiempirical MINDO/3 method to evaluate the cluster energy [61]. Miyazaki et al. have used density functional theory–based methods to study the stable structures of Si6H2n (n = 1–7) [62]. heir search for the local minima was started by using a combination of simulated annealing with pseudopotentials for Si and H atoms, along with optimizing structures initially built using chemical intuition, and by considering structures previously proposed by others. hree diferent groups have attempted to predict the GM for the SinH with n = 4–10 series of clusters. Prasad and coworkers developed a GA-based global optimization method, which they applied to the SinH clusters with n = 4–8 [63,64]. hey evaluated the SinH cluster energy using a tight binding Hamiltonian and did not attempt to ind the ab initio global minima for their structures. Yang et al. have performed an extensive series of DFT calculations on the

(a)

(d)

Si10H16

Si14H18

(b)

(e)

Si10H14

Si18H24

same SinH (n = 4–10) clusters and their anions but they did not explain how the initial SinH cluster structures were selected [65]. Presumably they used a chemical intuition approach perhaps being guided by the low-energy structures previously found by the Prasad group and they did ind lowest energy DFT structures that generally agreed with the Prasad results apart from when n = 6, 8, 9. More recently Ona et al. have developed a GA method that uses DFT calculations directly to globally optimize the SinH (n = 4–10) clusters [66]. heir lowest energy structures agree well with the previous structures obtained by Prasad and coworkers [63,64] and Yang et al. [65], but they did i nd a new Si7H GM and noted that the GA consistently produced several new low-energy isomers not found by the other two groups for the larger clusters. Ona et al. made a concluding comment on the importance of performing global optimization searches in order to correctly i nd the low-energy structures greatly increases with the size of the clusters [66]. We have also investigated the DFT GM for Si xHy clusters containing only a few H atoms using GA-based GM optimization strategy [28,29]. However, because of our interest in passivated Si nanoclusters and whether the Si x core wants to adopt the bulk diamond-like structure in this chapter, we only focus on Si xHy clusters where y > x [28,30,31]. Figure 5.4 illustrates the DFT GM we have found for Si10H16, Si14H20, Si18H24, Si10H14, Si14H18, and Si18H22 using the GA strategy described in Section 5.4. In our initial GA implementation [28] we used the original AM1 semiempirical method [21,22] to prescreen the diferent low-energy cluster structures generated by the GA. he Si10H16 cluster, shown in Figure 5.4, had the lowest DFT energy but was ranked as the 10th lowest energy structure by the AM1 calculations [28]. From these calculations, we realized the limitation to the AM1

(c)

Si14H20

(f )

Si18H22

FIGURE 5.4 GM found for diferent Si xHy clusters. (From Ge, Y. and Head, J.D., J. Phys. Chem. B, 108, 6025, 2004; Ge, Y. and Head, J.D., Chem. Phys. Lett., 398, 107, 2004.)

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Predicting Nanocluster Structures

parameters is that they were designed to handle a Si atom in a variety of diferent bonding situations [22]. We needed a fast cluster calculation method to better reproduce the energies of just high H coverage Si clusters and this led us to develop the GAM1 method where the AM1 parameters were adjusted to this speciic type of Si xHy clusters [29,30]. Ater some implementation changes to the GA [31] coupled with using the reparametrized GAM1 semiempirical method for the cluster, prescreening the eiciency of our GM search strategy was signiicantly improved enabling us to better ind the DFT GM for the larger Si18H22 and Si18H24 clusters [30,31]. he GM in Figure 5.4 shows that, as expected by chemical intuition, when there are enough passivating H atoms, such as with the Si10H16, Si14H20, and Si18H24 stoichiometries, the Si core does favor forming a fragment of the bulk Si diamond lattice. However, it is important to emphasize these GM were obtained by starting from several randomly generated Si xHy clusters in the initial GA population and the GA operators eventually produced the GM structures shown in Figure 5.4. For the slightly under passivated clusters Si10H14, Si14H18, and Si18H22 , which each have two less H atoms than corresponding fully H passivated cluster, the GM shown in Figure 5.4 are more diicult to predict by using chemical intuition alone since they do not appear to have any structural resemblance to the corresponding Si10H16, Si14H20, and Si18H24 GM. Furthermore, the Si10H14, Si14H18, and Si18H22 GM do not exhibit any obvious common structural trends. he Si18H22 GM does appear to retain more

Si10H16

Si10(OH)16

of the diamond-lattice-like structure than in the smaller Si14H18 and Si10H14 clusters. Perhaps, as might be expected, our results indicate that in larger under H passivated Si clusters more of the bulk Si structure will be retained, but in the region of the cluster with incomplete H passivation, there will be a structure corresponding essentially to a Si lattice defect. An important conclusion from these studies is that the lowest energy lattice defect structure in Si xHy–2 cannot be simply predicted by removing two H atoms from the diamond-lattice-like Si xHy GM and then performing a local geometry optimization. Instead, a more complete global optimization method is needed. We have also considered the inluence of diferent ligands on passivated Si nanoclusters by theoretically investigating Si10L16 clusters with the ligands L = H, CH3, OH, and F [43,44]. Unfortunately, we were not able to use the AM1-like semiempirical calculations to prescreen the cluster energies for even the F atom ligand [67]. he chemical intuition approach of inding the Si10F16 GM by performing local geometry optimizations on diferent Si10F16 clusters built by replacing H with F in the lowenergy clusters previously found for Si10H16 was also found not to be very reliable. Eventually an empirical correction formula was developed to calculate Si10F16 cluster energies using a GAM1 parameter set obtained by itting to 14 Si7F14 isomers where the F atoms were represented by pseudo H atoms. his enabled us to obtain the Si10F16 DFT GM shown in Figure 5.5 [43,67]. Our calculations suggested that this new structural type is preferred because the highly electronegative F atoms like to form terminal

Si10(CH3)16

Si10F16

FIGURE 5.5 Low-energy Si10L16 cluster structures. he Si10H16 and Si10F16 were found by a global optimization search. he lowest energy Si10(CH3)16 and Si10(OH)16 structures were obtained by replacing H and F atoms on the low-energy Si10H16 and Si10F16 cluster. (From Shiraishi, Y. et al., J. Phys. Chem. C, 112, 1819, 2008.)

5-10

SiF3 groups rather than be evenly distributed over the available surface sites on the Si10 core. Based on an electronegativity argument, a CH3 passivating ligand should be expected to produce clusters with Si core structures similar to those found for the Si xHy clusters, whereas the higher O atom electronegativity means the OH ligand should favor low-energy structures with Si cores similar to those found for the Si10F16 clusters. To test the inluence of diferent ligands on the Si10 core, we computed the optimized structures and relative energies by starting from the previously optimized low-energy Si10H16 or Si10F16 structure [30,31,43] and replacing either all the H or F atoms with a new ligand L = H, CH3, OH, F and performing a local geometry optimization using B3LYP/6-31G(d) DFT calculations. Finding the lowest energy structures for the Si10(OH)16 and Si10(CH3)16 clusters is more challenging than for Si10H16 and Si10F16 owing to the OH and CH3 ligands being able to form several diferent conformers on the same Si10 core framework. For this reason, we used a variation of the random cluster approach described in Section 5.4: ive initial geometries for the Si10(OH)16 and Si10(CH3)16 clusters were generated for each Si10 core type by replacing either all the H or F atoms in the optimized Si10H16 and Si10F16 clusters with OH or CH3 groups where the SiOH or one of SiCH planes were orientated at a randomly selected angle relative to the cluster framework. Figure 5.5 shows the locally optimized structure with lowest DFT energy for the four diferent Si10L16 clusters [44]. he Si10H16 and Si10F16 clusters are just the GM structures obtained previously [30,31,43], whereas a more extended GM search might ind lower energy Si10(CH3)16 and Si10(OH)16 clusters. hese Si10F16 calculations illustrate that the lowest energy structure of passivated Si nanoclusters is sensitive to the type of ligands used to passivate the particle. Ligands with electronegativities similar to that of Si give rise to low-energy structures where the ligand is uniformly dispersed over the Si core surface. Providing there are enough ligands, the Si core in the lowest energy structure resembles a bulk Si-like fragment. However, more bulky low electronegativity ligands, such as CH3 may experience static crowding on a Si10 core resulting in structures containing Si(CH3)3 groups to be only a few kcal/mol higher in energy than the cluster with a bulk Si-like core. he more electronegative ligands have a strong preference for forming SiL3 groups and this tendency eliminates the likelihood of the Si atoms at the nanocluster surface to have a bulk Si-like arrangement [44].

5.6 Summary Predicting the lowest energy nanocluster structure with highquality ab initio calculations is still very challenging. One needs to examine many diferent cluster structures at their locally optimized geometries. Currently, the basin hopping and genetic algorithm–based methods appear to be the best methods for producing and evaluating the diferent local minima without introducing any chemical bias into the inal identiication of a cluster’s lowest energy or GM structure. he eiciency of the GM search will be improved as better approximate cluster energy

Handbook of Nanophysics: Principles and Methods

methods, with faster evaluation times and closer matching of the cluster structure energy rankings with the high-quality ab initio methods are developed.

Acknowledgments he author is grateful for the computing resources provided by the Dell Cluster at the University of Hawaii and the Maui High Performance Computing Center. he author also thanks his former graduate student, Prof. Yingbin Ge at the University of Central Washington, for the many stimulating discussions on genetic algorithms.

References 1. F. Jensen, Introduction to Computational Chemistry, 2nd edn., Wiley, Chichester, U.K., 2007. 2. C. J. Cremer, Essential of Computational Chemistry, Wiley, Chichester, U.K., 2002. 3. C. Zhu, R. H. Byrd, and J. Nocedal, L-BFGS-B: Algorithm 778: L-BFGS-B, FORTRAN routines for large scale bound constrained optimization, ACM Trans. Math. Sotware 23, 550 (1997). 4. P. G. Mezey, Catchment region partitioning of energy hypersurfaces, I, heor. Chim. Acta 58, 309 (1981). 5. C. J. Tsai and K. D. Jordan, Use of the histogram and jumpwalking methods for overcoming slow barrier crossing behavior in Monte Carlo simulations: Applications to the phase transitions in the (Ar)13 and (H2O)8 clusters, J. Chem. Phys. 99, 6957 (1993). 6. F. H. Stillinger, Exponential multiplicity of inherent structures, Phys. Rev. E 59, 48 (1999). 7. J. E. Jones and A. E. Ingham, On the calculation of certain crystal potential constants, and on the cubic crystal of least potential energy, Proc. R. Soc. Lond. A 107, 636 (1925). 8. D. J. Wales, J. P. K. Doye, A. Dullweber, M. P. Hodges, F. Y. Naumkin, and F. Calvo, he Cambridge Cluster Database, URL:http://www-wales.ch.cam.ac.uk/CCD.html. 9. Y. Xiang, H. Jiang, W. Cai, and X. Shao, An eicient method based on lattice construction and the genetic algorithm for optimization of large Lennard-Jones clusters, J. Phys. Chem. A 108, 3586 (2004). 10. M. S. Daw and M. I. Baskes, Embedded-atom method: Derivation and application to impurities, surfaces, and other defects in metals, Phys. Rev. B 29, 6443 (1974). 11. A. F. Voter, he embedded atom method in Intermetallic Compounds, eds. J. H. Westbrook and R. L. Fleischer, Wiley, New York, 1995. 12. R. P. Gupta, Lattice relaxation at a metal surface, Phys. Rev. B 23, 6265 (1981). 13. A. P. Sutton and J. Chen, Long-range Finnis-Sinclair potentials, Philos. Mag. Lett. 61, 139 (1990). 14. F. H. Stillinger and T. A. Weber, Computer simulation of local order in condensed phases of silicon, Phys. Rev. B 31, 5262 (1985).

Predicting Nanocluster Structures

15. X. G. Gong, Empirical-potential studies on the structural properties of small silicon clusters, Phys. Rev. B 47, 2329 (1993). 16. B. C. Bolding and H. C. Andersen, Interatomic potential for silicon clusters, crystals, and surfaces, Phys. Rev. B 41, 10568 (1990). 17. I. Rata, A. A. Shvartsburg, M. Horoi, T. Frauenheim, K. W. M. Siu, and K. A. Jackson, Single-parent evolution algorithm and the optimization of Si clusters, Phys. Rev. Lett. 85, 546 (2000). 18. D. Porezag, T. Frauenheim, T. Khler, G. Seifert, and R. Kaschner, Construction of tight-binding-like potentials on the basis of density-functional theory: Application to carbon, Phys. Rev. B 51, 12947 (1995). 19. G. Seifert, D. Porezag, and T. Frauenheim, Calculations of molecules, clusters, and solids with a simpliied LCAO-DFT-LDA scheme, Int. J. Quantum Chem. 58, 185 (1996). 20. M. Elstner, D. Porezag, G. Jungnickel, J. Elsner, M. Haugk, T. Frauenheim, S. Suhai, and G. Seifert, Self-consistentcharge density-functional tight-binding method for simulations of complex materials properties, Phys. Rev. B 58, 7260 (1998). 21. M. J. S. Dewar, E. G. Zoebisch, E. F. Healy, and J. J. P. Stewart, AM1: A new general purpose quantum mechanical molecular model, J. Am. Chem. Soc. 107, 3902 (1985). 22. M. J. S. Dewar and C. Jie, AM1 calculations for compounds containing silicon, Organometallics 6, 1486 (1987). 23. J. P. K. Doye and D. J. Wales, Structural consequences on the range of the interatomic potential. A menagerie of clusters, J. Chem. Soc. Faraday Trans. 93, 4233 (1997). 24. C. Roberts, R. L. Johnston, and N. T. Wilson, A genetic algorithm for the structural optimization of Morse clusters, heor. Chem. Acc. 104, 123 (2000). 25. B. Hartke, Global geometry optimization of clusters guided by N-dependent model potentials, Chem. Phys. Lett. 258, 144 (1996). 26. B. Hartke, Global geometry optimization of small silicon clusters at the level of density functional theory, heor. Chem. Acc. 99, 241 (1998). 27. E. Apra, R. Ferrando, and A. Fortunelli, Density-functional global optimization of gold nanoclusters, Phys. Rev. B 73, 205414 (2006). 28. Y. Ge and J. D. Head, Global optimization of H-passivated Si clusters with a genetic algorithm, J. Phys. Chem. B 106, 6997 (2002). 29. Y. Ge and J. D. Head, Global optimization of SixHy at the ab initio level via an iteratively parametrized semiempirical method, Int. J. Quantum Chem. 95, 617 (2003). 30. Y. Ge and J. D. Head, Global optimization of H-passivated Si clusters at the ab initio level via the GAM1 semiempirical method, J. Phys. Chem. B 108, 6025 (2004). 31. Y. Ge and J. D. Head, Fast global optimization of SixHy clusters: New mutation operators in the cluster genetic algorithm, Chem. Phys. Lett. 398, 107 (2004).

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32. I. Rossi and D. G. Truhlar, Parameterization of NDDO wavefunctions using genetic algorithms. An evolutionary approach to parameterizing potential energy surfaces and direct dynamics calculations for organic reactions, Chem. Phys. Lett. 233, 231 (1995). 33. D. J. Wales, Energy Landscapes, Cambridge University Press, Cambridge, U.K., 2004. 34. B. Hartke, Application of evolutionary algorithms to global cluster geometry optimization, Struct. Bonding (Berlin), ed. R. L. Johnston, 110, 33 (2004). 35. R. L. Johnston, Evolving better nanoparticles: Genetic algorithms for optimising cluster geometries, J. Chem. Soc. Dalton Trans. 2003, 4193 (2003). 36. M. Springborg, Determination of structure in electronic structure calculations, Chem. Model. 4, 249 (2006). 37. S. Kirkpatrick, C. D. Gelatt Jr., and M. P. Vecchi, Optimization by simulated annealing, Science 220, 671 (1983). 38. R. S. Judson, M. E. Colvin, J. C. Meza, A. Hufer, and D. Gutierrez, Do intelligent coniguration search techniques outperform random search for large molecules? Int. J. Quantum Chem. 44, 277 (1992). 39. W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes, 3rd edn., Cambridge University Press, Cambridge, U.K., 2007. 40. D. J. Wales and H. A. Scheraga, Global optimization of clusters, crystals, and biomolecules, Science 285, 1368 (1999). 41. D. J. Wales and J. P. K. Doye, Global optimization by basinhopping and the lowest energy structures of Lennard-Jones clusters containing up to 110 atoms, J. Phys. Chem. A 101, 5111 (1997). 42. D. M. Deaven and K. M. Ho, Molecular geometry optimization with a genetic algorithm, Phys. Rev. Lett. 75, 288 (1995). 43. Y. Ge and J. D. Head, Ligand efects on SixLy cluster structures with L = H and F, Mol. Phys. 103, 1035 (2005). 44. Y. Shiraishi, D. Robinson, Y. Ge, and J. D. Head, Low energy structures of ligand passivated Si nanoclusters: heoretical investigation of Si2L4 and Si10L16 (L = H, CH3, OH and F), J. Phys. Chem. C 112, 1819 (2008). 45. F. Baletto and R. Ferrando, Structural properties of nanoclusters: Energetic, thermodynamic and kinetic efects, Rev. Mod. Phys. 77, 371 (2005). 46. R. Ferrando, J. Jellinek, and R. L. Johnston, Nanoalloys: From theory to applications of alloy clusters and nanoparticles, Chem. Rev. 108, 845 (2008). 47. F. Ruette and C. Gonzalez, he importance of global minimization and adequate theoretical tools for cluster optimization: he Ni6 cluster case, Chem. Phys. Lett. 359, 428 (2002). 48. O. M. Becker and M. Karplus, he topology of multidimensional potential energy surfaces: heory and application to peptide structure and kinetics, J. Chem. Phys. 106, 1495 (1997). 49. L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett. 57, 1046 (1990).

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50. W. L. Wilson, P. F. Szajowski, and L. E. Brus, Quantum coninement in size-selected surface-oxidized silicon nanocrystals, Science 262, 1242 (1993). 51. V. Lehman and U. Goesele, Porous silicon formation: A quantum wire efect, Appl. Phys. Lett. 58, 856 (1991). 52. J. P. Proot, C. Delerue, and G. Allan, Electronic structure and optical properties of silicon crystallites: Application to porous silicon, Appl. Phys. Lett. 61, 1948 (1992). 53. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Electronic states and luminescence in porous silicon quantum dots: he role of oxygen, Phys. Rev. Lett. 82, 197 (1999). 54. Z. Zhou, R. A. Friesner, and L. Brus, Electronic structure of 1 to 2 nm diameter silicon core/shell nanocrystals: Surface chemistry, optical spectra, charge transfer, and doping, J. Am. Chem. Soc. 125, 15599 (2003). 55. Z. Zhou, L. Brus, and R. A. Friesner, Electronic structure and luminescence of 1.1- and 1.4-nm silicon nanocrystals: Oxide shell versus hydrogen passivation, Nano Lett. 3, 163 (2003). 56. E. Degoli, G. Cantele, E. Luppi, R. Magri, D. Ninno, O. Bisi, and S. Ossicini, Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state, Phys. Rev. B 69, 155411 (2004). 57. J. Fischer, J. Baumgartner, and C. Marschner, Synthesis and structure of sila-adamantane, Science 310, 825 (2005). 58. L. Sari, M. C. McCarthy, H. F. Schaefer, and P. haddeus, Mono- and dibridged isomers of Si2H3 and Si2H4: he true ground state global minima. heory and experiment in concert, J. Am. Chem. Soc. 125, 11409 (2003). 59. D. Sillars, C. J. Bennett, Y. Osamura, and R. I. Kaiser, Infrared spectroscopic detection of the disilenyl (Si2H3) and d3-disilenyl (Si2D3) radicals in silane and d4-silane matrices, Chem. Phys. Lett. 392, 541 (2004).

Handbook of Nanophysics: Principles and Methods

60. S. D. Chambreau, L. Wang, and J. Zhang, Highly unsaturated hydrogenated silicon clusters, SinHx (n = 3 − 10, x = 0 − 3), in lash pyrolysis of silane and disilane, J. Phys. Chem. A 106, 5081 (2002). 61. V. Meleshko, Y. Morokov, and V. Schweigert, Structure of small hydrogenated silicon clusters: Global search of lowenergy states, Chem. Phys. Lett. 300, 118 (1999). 62. T. Miyazaki, T. Uda, I. Stich, and K. Terakura, Hydrogenationinduced structural evolution of small silicon clusters: he case of Si 6H +x , Chem. Phys. Lett. 284, 12 (1998). 63. N. Chakraboti, P. S. De, and R. Prasad, Genetic algorithms based structure calculations for hydrogenated silicon clusters. Mater. Lett. 55, 20 (2002). 64. D. Balamurugan and R. Prasad, Efect of hydrogen on ground-state structures of small silicon clusters, Phys. Rev. B 64, 205406 (2001). 65. J. Yang, X. Bai, C. Li, and W. Xu, Silicon monohydride clusters SinH (n = 4 – 10) and their anions: Structures, thermochemistry, and electron ainities, J. Phys. Chem. A 109, 5717 (2005). 66. O. Ona, V. E. Bazterra, M. C. Caputo, M. B. Ferraro, and J. C. Facelli, Ab initio global optimization of the structures of SinH, n = 4 – 10, using parallel genetic algorithms, Phys. Rev. A 72, 053205 (2005). 67. Y. Ge, Global optimization of passivated Si clusters at the ab initio level via semiempirical methods, PhD thesis, University of Hawaii, Honolulu, HI (December 2004). 68. M. D. Wolf and U. Landman, Genetic algorithms for structural cluster optimization, J. Phys. Chem. A 102, 6129 (1998).

II Nanoscale Systems 6 he Nanoscale Free-Electron Model Daniel F. Urban, Jérôme Bürki, Charles A. Staford, and Hermann Grabert .....6-1 Introduction • Assumptions and Limitations of the NFEM • Formalism of the NFEM • Conductance and Force • Linear Stability Analysis • Summary and Discussion • References

7 Small-Scale Nonequilibrium Systems

Peder C. F. Møller and Lene B. Oddershede ................................................... 7-1

Introduction • Systems in Equilibrium • Nonequilibrium Systems • Conclusion and Outlook • References

8 Nanoionics Joachim Maier .................................................................................................................................................8-1 Introduction: Signiicance of Ion Conduction • Ionic Charge Carriers: Concentrations and Mobilities • Ionic Charge Carrier Distribution at Interfaces and Conductivity Efects • Mesoscopic Efects • Consequences of Curvature for Nanoionics • Conclusions • References

9 Nanoscale Superconductivity Francois M. Peeters, Arkady A. Shanenko, and Mihail D. Croitoru ..........................9-1 Introduction • heoretical Formalism • Quantum-Size Oscillations • Nanoscale Superconductivity in Quantum-Size Regime • Conclusion • Acknowledgments • References

10 One-Dimensional Quantum Liquids Kurt Schönhammer ..........................................................................................10-1 Introduction • Noninteracting Fermions and the Harmonic Chain • he Tomonaga-Luttinger Model • Non-Fermi Liquid Properties • Additional Remarks • References

11 Nanoluidics of hin Liquid Films

Markus Rauscher and Siegfried Dietrich ........................................................... 11-1

Introduction • heoretical Description of Open Nanoluidic Systems • Experimental Methods • Homogeneous Substrates • Heterogeneous Substrates • Summary and Outlook • References

12 Capillary Condensation in Conined Media Elisabeth Charlaix and Matteo Ciccotti ............................................12-1 Physics of Capillary Condensation • Capillary Adhesion Forces • Inluence on Friction Forces • Inluence on Surface Chemistry • References

13 Dynamics at the Nanoscale

A. Marshall Stoneham and Jacob L. Gavartin ...............................................................13-1

Introduction • Time-Dependent Behavior and the II–VI Nanodot • Cycles of Excitation and Luminescence • Where the Quantum Enters: Exploiting Spins and Excited States • Scent Molecule: Nasal Receptor • Conclusions • Acknowledgments • References

14 Electrochemistry and Nanophysics Werner Schindler .................................................................................................14-1 Introduction • Solid/Liquid Interface from a Molecular Point of View • Tunneling Process at Solid/Liquid Interfaces • Electrochemical Processes at Nanoscale • Localization of Electrochemical Processes • Beyond Electrochemical Processes: In-Situ Tunneling Spectroscopy • Beyond Electrochemical Processes: In-Situ Electrical Transport Measurements at Individual Nanostructures • Some Technical Aspects of the Application of Scanning Probe Techniques at Solid/Liquid Interfaces at Sub-Nanometer Resolution • References

II-1

6 The Nanoscale Free-Electron Model

Daniel F. Urban

6.1 6.2 6.3

Scattering Matrix Formalism • WKB Approximation • WKB Approximation for Non-Axisymmetric Wires • Weyl Expansion • Material Dependence

Albert-Ludwigs-Universität

Jérôme Bürki California State University, Sacramento

Charles A. Stafford University of Arizona

Hermann Grabert Albert-Ludwigs-Universität

Introduction .............................................................................................................................6-1 Assumptions and Limitations of the NFEM .......................................................................6-2 Formalism of the NFEM.........................................................................................................6-3

6.4

Conductance and Force ..........................................................................................................6-6

6.5

Linear Stability Analysis .........................................................................................................6-7

Conductance • Force Rayleigh Instability • Quantum-Mechanical Stability Analysis • Axial Symmetry • Breaking Axial Symmetry • General Stability of Cylinders • Comparison with Experiments • Material Dependence

6.6 Summary and Discussion.....................................................................................................6-12 References...........................................................................................................................................6-13

6.1 Introduction he past decades have seen an accelerating miniaturization of both mechanical and electrical devices; therefore, a better understanding of properties of ultrasmall systems is required in increasing detail. he irst measurements of conductance quantization in the late 1980s (van Wees et al. 1988, Wharam et al. 1988) in constrictions of two-dimensional electron gases formed by means of gates have demonstrated the importance of quantum coninement efects in these systems and opened a wide ield of research. A major step has been the discovery of conductance quantization in metallic nanocontacts (Agraït et al. 1993, Brandbyge et al. 1995, Krans et al. 1995): he conductance measured during the elongation of a metal nanowire is a steplike function where the typical step height is frequently near a multiple of the conductance quantum G 0 = 2e2/h, where e is the electron charge and h Planck’s constant. Surprisingly, this was initially not interpreted as a quantum efect but rather as a consequence of abrupt atomic rearrangements and elastic deformation stages. his interpretation, supported by a series of molecular dynamics simulations (Landman et al. 1990, Todorov and Sutton 1993), was claimed to be conirmed by another pioneering experiment (Rubio et al. 1996, Stalder and Dürig 1996) measuring simultaneously the conductance and the cohesive force of gold nanowires with diameters ranging from several Ångstroms to several nanometers. As the contact was pulled apart, oscillations in the force of order 1 nN were observed in perfect correlation with the conductance steps.

It came as a surprise when Staford et al. (1997) introduced the free-electron model of a nanocontact—referred to as the nanoscale free-electron model (NFEM) henceforth—and showed that this comparatively simple model, which emphasizes the quantum coninement efects of the metallic electrons, is able to reproduce quantitatively the main features of the experimental observations. In this approach, the nanowire is understood to act as a quantum waveguide for the conduction electrons (which are responsible for both conduction and cohesion in simple metals): Each quantized mode transmitted through the contact contributes G0 to the conductance and a force of order EF/λF to the cohesion, where EF and λF are the Fermi energy and wavelength, respectively. Conductance channels act as delocalized bonds whose stretching and breaking are responsible for the observed force oscillations, thus explaining straightforwardly their correlations with the conductance steps. Since then, free-standing metal nanowires, suspended from electrical contacts at their ends, have been fabricated by a number of diferent techniques. Metal wires down to a single atom thick were extruded using a scanning tunneling microscope tip (Rubio et al. 1996, Untiedt et al. 1997). Metal nanobridges were shown to “self-assemble” under electron-beam irradiation of thin metal i lms (Kondo and Takayanagi 1997, 2000, Rodrigues et al. 2000), leading to nearly perfect cylinders down to four atoms in diameter, with lengths up to 15 nm. In particular, the mechanically controllable break junction technique, introduced by Moreland and Ekin (1985) and reined by Ruitenbeek and coworkers (Muller et al. 1992), has allowed for systematic studies 6-1

6-2

of nanowire properties for a variety of materials. For a survey, see the review by Agraït et al. (2003). A remarkable feature of metal nanowires is that they are stable. Most atoms in such a thin wire are at the surface, with small coordination numbers, so that surface efects play a key role in their energetics. Indeed, macroscopic arguments comparing the surface-induced stress to the yield strength indicate a minimum radius for solidity of order 10 nm (Zhang et al. 2003). Below this critical radius without any stabilizing mechanism, plastic low would lead to a Rayleigh instability (Chandrasekhar 1981), breaking the wire apart into clusters. Already in the nineteenth century, Plateau (1873) realized that this surface-tension-driven instability is unavoidable if cohesion is due solely to classical pairwise interactions between atoms. he experimental evidence accumulated over the past decade on the remarkable stability of nanowires considerably thinner than the above estimate clearly shows that electronic efects emphasized by the NFEM dominate over atomistic efects for suiciently small radii. A series of experiments on alkali metal nanocontacts (Yanson et al. 1999, 2001) identiied electron-shell efects, which represent the semiclassical limit of the quantum-size efects discussed above, as a key mechanism inluencing nanowire stability. Energetically favorable structures were revealed as peaks in conductance histograms, periodic in the nanowire radius, analogous to the electron-shell structure previously observed in metal clusters (de Heer 1993). A supershell structure was also observed (Yanson et al. 2000) in the form of a periodic modulation of the peak heights. Recently, such electron-shell efects have also been observed, even at room temperature, for the noble metals gold, copper, and silver (Díaz et al. 2003, Mares et al. 2004, Mares and van Ruitenbeek 2005) as well as for aluminum (Mares et al. 2007). Soon ater the irst experimental evidence for electron-shell efects in metal nanowires, a theoretical analysis using the NFEM found that nanowire stability can be explained by a competition of the two key factors: surface tension and electron-shell efects (Kassubek et al. 2001). Both linear (Urban and Grabert 2003, Zhang et al. 2003) and nonlinear (Bürki et al. 2003, 2005) stability analyses of axially symmetric nanowires found that the surface-tension-driven instability can be completely suppressed in the vicinity of certain “magic radii.” However, the restriction to axial symmetry implies characteristic gaps in the sequence of stable nanowires, which is not fully consistent with the experimentally observed nearly perfect periodicity of the conductance peak positions. A Jahn–Teller deformation breaking the symmetry can lead to more stable, deformed conigurations. Recently, the linear stability analysis was extended to wires with arbitrary cross sections (Urban et al. 2004a, 2006). h is general analysis conirms the existence of a sequence of magic cylindrical wires of exceptional stability, which represent roughly 75% of the main structures observed in conductance histograms. he remaining 25% are deformed and predominantly of elliptical or quadrupolar shapes. his result allows for a consistent interpretation of experimental conductance histograms for alkali and noble metals, including both the electronic shell and supershell structures (Urban et al. 2004b).

Handbook of Nanophysics: Principles and Methods

his chapter is intended to give an introduction to the NFEM. Section 6.2 summarizes the assumptions and features of the model while the general formalism is described in Section 6.3. In the following sections, two applications of the NFEM will be discussed: First, we give a uniied explanation of electrical transport and cohesion in metal nanocontacts (Section 6.4) and second, the linear stability analysis for straight metal nanowires will be presented (Section 6.5). he latter will include cylindrical wires as well as wires with broken axial symmetry, thereby discussing the Jahn–Teller efect.

6.2 Assumptions and Limitations of the NFEM Guided by the importance of conduction electrons in the cohesion of metals, and by the success of the jellium model in describing metal clusters (Brack 1993, de Heer 1993), the NFEM replaces the metal ions by a uniform, positively charged background that provides a conining potential for the electrons. he electron motion is free along the wire and conined in the transverse directions. Usually an ininite coninement potential (hard-wall boundary conditions) for the electrons is chosen. his is motivated by the fact that the efective potential conining the electrons to the wire will be short ranged due to the strong screening in good metals. In a irst approximation, electron–electron interactions are neglected, which is reasonable due to the excellent screening (Kassubek et al. 1999) in metal wires with G > G 0. It is known from cluster physics that a free-electron model gives qualitative agreement and certainly describes the essential physics involved. Interaction, exchange, and correlation efects as well as a realistic coninement potential have to be taken into account, however, for quantitative agreement.* From this, we infer that the same is true for metal nanowires, where similar coninement efects are important. Remarkably, the electron-shell efects crucial to the stabilization of long wires are described with quantitative accuracy by the simple free-electron model, as discussed below. In addition, the NFEM assumes that the positive background behaves like an incompressible luid when deforming the nanowire. his takes into account, to lowest order, the hard-core repulsion of core electrons as well as the exchange energy of conduction electrons. When using a hard-wall coninement, the Fermi energy EF (or equivalently the Fermi wavelength λF) is the only parameter entering the NFEM. As EF is material dependent and experimentally accessible, there is no adjustable parameter. his pleasant feature needs to be abandoned in order to model diferent materials more realistically. Diferent kinds of appropriate surface boundary conditions are imaginable in order to model the behavior of an incompressible luid and to it the surface properties of various metals. his will be discussed in detail in Section 6.3.5. * Note, however, that the error introduced by using hard-walls instead of a more realistic sot-wall coni ning potential can be essentially corrected for by placing the hard-wall a i nite distance outside the wire surface, thus compensating for the over-coni nement (García-Martin et al. 1996).

6-3

The Nanoscale Free-Electron Model

A more reined model of a nanocontact would consider efects of scattering from disorder (Bürki and Staford 1999, Bürki et al. 1999) and electron–electron interaction via a Hartree approximation (Staford et al. 2000a, Zhang et al. 2005). he inclusion of disorder in particular leads to a better quantitative agreement with transport measurements, but does not change the cohesive properties qualitatively in any signiicant way, while electron– electron interactions are found to be a small correction in most cases. As a result, eforts to make the NFEM more realistic do not improve it signiicantly, while removing one of its main strengths, namely the absence of any adjustable parameters. he major shortcoming of the NFEM is that its applicability is limited to good metals having a nearly spherical Fermi surface. It is best suited for the (highly reactive) s-orbital alkali metals, providing a theoretical understanding of the important physics in nanowires. he NFEM has also been proven to qualitatively (and oten semiquantitatively) describe noble metal nanowires, and in particular, gold. Lately, it has been shown that the NFEM can even be applied (within a certain parameter range) to describe the multivalent metal aluminum, since Al shows an almost spherical Fermi surface in the extended-zone scheme. he NFEM is especially suitable to describe shell efects due to the conduction-band s-electrons, and the experimental observation of a crossover from atomic-shell to electron-shell efects with decreasing radius in both metal clusters (Martin 1996) and nanowires (Yanson et al. 2001) justiies a posteriori the use of the NFEM in the later regime. Naturally, the NFEM does not capture efects originating from the directionality of bonding, such as the efect of surface reconstruction observed for Au. For this reason, it cannot be used to model atomic chains of Au atoms, which are currently extensively studied experimentally. Keeping these limitations in mind, the NFEM is applicable within a certain range of radius, capturing nanowires with only very few atoms in cross section up to wires of several nanometers in thickness, depending on the material under consideration.

6.3 Formalism of the NFEM 6.3.1 Scattering Matrix Formalism A metal nanowire represents an open system connected to metallic electrodes at each end. hese macroscopic electrodes act as ideal electron reservoirs in thermal equilibrium with a well-deined temperature and chemical potential. When treating an open system, the Schrödinger equation is most naturally formulated as a scattering problem. he basic idea of the scattering approach is to relate physical properties of the wire with transmission and relection amplitudes for electrons being injected from the leads.* he fundamental quantity describing the properties of the system is the energy-dependent unitary scattering matrix S(E)

* Phase coherence is assumed to be preserved in the wire (a good approximation given the size of the system compared to the inelastic mean-free path) and inelastic scattering is restricted to the electron reservoirs only.

connecting incoming and outgoing asymptotic states of conduction electrons in the electrodes. For a quantum wire, S(E) can be decomposed into four submatrices S αβ (E), α, β = 1, 2, where 1 (2) indicates the let (right) lead. Each submatrix S αβ (E) determines how an incoming eigenmode of lead β is scattered into a linear combination of outgoing eigenmodes of lead α. he eigenmodes of the leads are also referred to as scattering channels. he formulation of electrical transport in terms of the scattering matrix was developed by Landauer and Büttiker: he (linear response) electrical conductance G can be expressed as a function of the submatrix S21, which describes transmission from the source electrode 1 to the drain electrode 2 and is given by (Datta 1995) G=

2e 2 −∂f (E) † dE Tr1 S21 (E)S21 (E) . h ∂E

{

∫

}

(6.1)

Here, f(E) = {exp[β(E − μ)] + 1}−1 is the Fermi distribution function for electrons in the reservoirs, β = (kBT)−1 is the inverse temperature, and μ is the electron chemical potential, speciied by the macroscopic electrodes. he trace Tr1 sums over all eigenmodes of the source. he appropriate thermodynamic potential to describe the energetics of an open system is the grand canonical potential Ω=−

1 dE D (E)ln ⎡⎣1 + e −β(Ε− μ) ⎤⎦ , β

∫

(6.2)

where D(E) is the electronic density of states (DOS) of the nanowire. Notably, the DOS of an open system may also be expressed in terms of the scattering matrix as (Dashen et al. 1969) D( E ) =

⎧⎪ 1 ∂S ∂S † ⎪⎫ Tr ⎨S † (E) S(E)⎬ , − 2πi ⎩⎪ ∂E ∂E ⎭⎪

(6.3)

where Tr sums over the states of both electrodes. his formula is also known as Wigner delay. Note that Equations 6.1 through 6.3 include a factor of 2 for spin degeneracy. hus, once the electronic scattering problem for the nanowire is solved, both transport and energetic quantities can be readily calculated.

6.3.2 WKB Approximation For an axially symmetric constriction aligned along the z-axis, as depicted in Figure 6.1, its geometry is characterized by the z-dependent radius R(z). Outside the constriction, the solutions of the Schrödinger equation decompose into plane waves along the wire and discrete eigenmodes of a circular billiard in the transverse direction. he eigenenergies E μν of a circular billiard are given by Eμν =

ℏ 2 γ 2μν , 2me R02

(6.4)

6-4

Quantized motion

Handbook of Nanophysics: Principles and Methods

⎡ z ⎤ 1 Φn (r , ϕ , z) ~ exp ⎢ ± i kn (E, z ′)dz ′ ⎥ . ⎢ ⎥ kn (E, z ) ⎣ 0 ⎦

∫

Free motion

(6.7)

For a constriction of length L, the transmission amplitude in channel n is then given by the familiar WKB barrier transmission factor

E EF n3 n2 n1

⎡ L ⎤ tn (E) = exp ⎢i dz kn (E, z )⎥ ≡ Tn (E)e iΘn ( E ) . ⎢ ⎥ ⎣ 0 ⎦

∫

z

FIGURE 6.1 Upper-let part: Sketch of a nanoconstriction. Within the adiabatic approximation, transverse and longitudinal motions are separable: the motion in the transverse direction is quantized, while in the longitudinal direction the electrons move in a potential created by the transverse energies (see Equation 6.6). Lower-let part: Sketch of transverse energies for diferent transverse channels n1, n2, and n3 as a function of the z-coordinate. Channel n1 is transmitted through the constriction as its maximum transverse energy is smaller than the Fermi energy, channel n2 is partly transmitted, and channel n3 is almost totally relected. Right part: Density plots of |Ψn(r, φ)|2 for the three eigenmodes depicted on the lower-let part, corresponding to ive states due to degeneracies of energies En2 and En3 .

where the quantum number γμν is the νth root of the Bessel function J μ of order μ and R0 is the radius of the wire outside the constriction. In cylindrical coordinates r, φ, and z, the asymptotic scattering states read

Here Tn is the transmission coeicient of channel n and Θn is the corresponding phase shit. he transmission amplitude gets exponentially damped in regions where the transverse energy is larger than the state total energy.* he full S-matrix is now found to be of the form ⎛ i 1 − T e iΘ S=⎜ ⎜⎝ T e iΘ

Ψμν (r , ϕ, z ) ~ e

J μ (γ μνr /R0 ),

(6.5)

where kμν (E) = 2me (E − Eμν )/ℏ 2 is the longitudinal wavevector. In the following, we use multi-indices n = (μν) in order to simplify the notation. If the constriction is smooth, i.e., |∂R /∂z| 0, 0 otherwise.) he DOS is found to be connected with the phase shit Θn, D(E) =

=

2 π

∑ ∂Θ∂E(E) n

(6.11)

n

1 2me π ℏ2

L

∑ ∫ dz n

0

θ(E − En (z )) . E − En (z )

(6.12)

From the DOS, one gets the grand canonical potential in the limit of zero temperature as * h is simplest WKB treatment does not correctly describe above-barrier relection; a better approximation including this efect is described by Brandbyge et al. (1995) and by Glazman et al. (1988).

6-5

The Nanoscale Free-Electron Model L

⎛ E (z ) ⎞ θ EF − En (z ) ⎜ 1 − n ⎟ ⎝ EF ⎠

∫ ∑(

8E Ω  − F dz 3λ F T→0

0

n

)

3/2

,

(6.13)

which can then be used to calculate the tensile force and stability of the nanowire, as discussed in the following sections.

6.3.3 WKB Approximation for Non- Axisymmetric Wires he formalism presented in the previous subsection can be readily extended to non-axisymmetric wires. In general, the surface of the wire is given by the radius function r = R(φ, z), which may be decomposed into a multipole expansion ⎧⎪ R(ϕ , z ) = ρ(z ) ⎨ 1 − ⎪⎩

∑ m

λ m (z )2 + 2

∑λ m

m

⎫⎪ (z )cos ⎣⎡m ϕ − ϕm (z ) ⎦⎤ ⎬ , ⎪⎭

(

)

(6.14) where the sums run over positive integers. he parameterization is chosen in such a way that πρ(z)2 is the cross-sectional area at position z. he parameter functions λm(z) and φm(z) compose a vector �(z), characterizing the cross-sectional shape of the wire. he transverse problem at i xed longitudinal position z now takes the form ⎛ ∂2 1 ∂ ⎞ 1 ∂2 2me ⎜ ∂r 2 + r ∂r + r 2 ∂ϕ2 + ℏ 2 En (z )⎟ χn (r , ϕ; z ) = 0, ⎝ ⎠

(6.15)

2

ℏ 2 ⎛ γ n (Λ ) ⎞ ⎜ ⎟ , 2me ⎝ ρ ⎠

Semiclassical approximations oten give an intuitive picture of the important physics and, due to their simplicity, allow for a better understanding of some general features. A very early analysis of the density of eigenmodes of a cavity with relecting walls goes back to Weyl (1911) who proposed an expression in terms of the volume and surface area of the cavity. His formula was later rigorously proved and further terms in the expansion were calculated. Quite generally, we can express any extensive thermodynamic quantity as the sum of such a semiclassical Weyl expansion, which depends on geometrical quantities such as the system volume V, surface area S, and integrated mean curvature C, as well as an oscillatory shell correction due to quantum-size efects (Brack and Bhaduri 1997). In particular, the grand canonical potential (Equation 6.2) can be written as Ω = −ωV + σ s S − γs C + δ Ω,

(6.17)

where the energy density ω, surface tension coeicient σs, and curvature energy γs are, in general, material- and temperaturedependent coeicients. On the other hand, the shell correction δΩ can be shown, based on very general arguments (Strutinsky 1968, Zhang et al. 2005), to be a single-particle efect, which is well described by the NFEM.

6.3.5 Material Dependence

with boundary condition χ n(R(φ, z), φ; z) = 0 for all φ ∈ [0, 2π]. h is determines the transverse eigenenergies En(z) = En(ρ(z), �(z)), which now depend on the cross-sectional shape through the boundary condition. With the cross-section parametrization (Equation 6.14), their dependence on geometry can be written as En (ρ, Λ ) =

6.3.4 Weyl Expansion

(6.16)

where the shape-dependent functions γn(�) remain to be determined. In general, and in particular for non-integrable cross sections, this has to be done by solving Equation 6.15 numerically (Urban et al. 2006). he adiabatic approximation (long-wavelength limit) implies the decoupling of transverse and longitudinal motions. One starts with the ansatz Ψ(r, φ, z) = χ(r, φ; z) Φ(z) and neglects all z-derivatives of the transverse wavefunction χ. Again, one is let with a series of efective one-dimensional scattering problems (Equation 6.6) for the longitudinal wave functions Φn(z), in which the transverse eigenenergies En(ρ(z), �(z)) act as additional potentials for the motion along the wire. hese scattering problems can again be solved using the WKB approximation and Equations 6.11 and 6.13 apply.

Within the NFEM, there is only one parameter entering the calculation apart from the contact geometry: the Fermi energy EF, which is material dependent and in general well known (see Table 6.1). Nevertheless, the energy cost of a deformation due to surface and curvature energy, which can vary signiicantly for diferent materials, plays a crucial role in determining the stability of a nanowire. Obviously, when working with a free-electron model, contributions of correlation and exchange energy are not included, while they are known to play an essential role in a correct treatment of the surface energy (Lang 1973). Using the NFEM a priori implies the macroscopic free energy density ω = 2 EFkF3 /15π 2 , the macroscopic surface energy σs = EFkF2 /16π , and the macroscopic curvature energy γs = 2EFk F/9π2. When drawing conclusions for metals having surface tensions and curvature energies that are rather diferent from these values, one has to think of an appropriate way to include these materialspeciic properties in the calculation. A convenient way of modeling the material properties without losing the pleasant features of the NFEM is via the implementation of an appropriate surface boundary condition. Any atom-conserving deformation of the structure is subject to a constraint of the form N ≡ kF3 V − ηs kF2S + ηc kFC = const.

(6.18)

This constraint on deformations of the nanowire interpolates between incompressibility and electroneutrality as side

6-6

Handbook of Nanophysics: Principles and Methods TABLE 6.1 Material Parameters (Ashcrot and Mermin 1976, Perdew et al. 1991) of Several Monovalent Metals Element EF [eV] kF [nm−1] σs [meV/Å2] σ s [EFkF2 ] ηs γs [meV/Å] γs [EF kF] ηc

Li

Na

K

Cu

Ag

Au

Al

4.74 11.2 27.2 0.0046

3.24 9.2 13.6 0.0050

2.12 7.5 7.58 0.0064

7.00 13.6 93.3 0.0072

5.49 12.0 64.9 0.0082

5.53 12.1 78.5 0.0097

11.7 17.5 59.2 0.0017

1.135 62.0 0.0117 0.802

1.105 24.6 0.0082 1.06

1.001 14.9 0.0094 0.971

0.939 119 0.0125 0.741

0.866 96.4 0.0146 0.583

0.755 161 0.0240 −0.111

1.146 121 0.0059 1.229

Source: Adapted from Urban, D.F. et al., Phys. Rev. B, 74, 245414, 2006. Note: Fermi energy EF , Fermi wavevector kF , surface tension σs, and curvature energy γs, along with the corresponding values of ηs and ηc. he last column gives the corresponding values for the multivalent metal Al (see discussion in Section 6.5.7).

conditions, that is between volume conservation (ηs = ηc = 0) and treating the semiclassical expectation value for the charge Q Weyl (Brack and Bhaduri 1997) as an invariant (ηs = 3π/8, ηc = 1). he grand canonical potential of a free-electron gas conined within a given geometry by hard-wall boundaries, as given by Equation 6.17, changes under a deformation by ΔΩ = −ωΔV + σs ΔS − γ s ΔC + Δ ⎡⎣δΩ ⎤⎦ =−

⎛ ⎛ ω ω ⎞ ω ⎞ Δ N + ⎜ σs − ηs ⎟ ΔS − ⎜ γ s − 2 ηc ⎟ ΔC + Δ ⎡⎣δ Ω ⎤⎦ , 3 ⎝ ⎠ ⎝ k kF kF ⎠ F (6.19)

where the constraint (6.18) was used to eliminate . Now the prefactors of the change in surface Δ and the change in integrated mean curvature Δ can be identiied as efective surface tension and curvature energy, respectively. hey can be adjusted to it a speciic material’s properties by an appropriate choice of the parameters ηs and ηc (see Table 6.1).

he formalism presented in Section 6.3 can now be applied to a speciic wire geometry (Staford et al. 1997), namely, a cosine constriction, R0 + Rmin R0 − Rmin ⎛ 2πz ⎞ cos ⎜ , + ⎝ L ⎟⎠ 2 2

he conductance is obtained from Equation 6.10. As the transmission amplitudes n vary exponentially from 1 to 0 when the transverse energy of the respective channel at the neck of the constriction traverses the Fermi energy, this results in a steplike behavior of the conductance with almost lat plateaus in between. his is the phenomenon of conductance quantization, which is observable even at room temperature for noble metal nanowires due to the large spacing of transverse energies (of order 1 eV for Au, to compare to kBT ≃ 10−3 eV at room temperature). he upper panel of Figure 6.2a shows the conductance obtained with an improved variant of the WKB approximation (Glazman et al. 1988, Brandbyge et al. 1995) for the geometry (6.20). he conductance as a function of elongation shows the expected steplike structure and the step heights are 2e2/h and integer multiples thereof (the multiplicity depends on the degeneracy of the transverse modes). An ideal plastic deformation was assumed, i.e., the volume of the constriction was held constant during elongation.*

6.4.2 Force

6.4 Conductance and Force

R(z ) =

6.4.1 Conductance

(6.20)

of a cylindrical wire. One is interested in the mechanical properties of this metallic nanoconstriction in the regime of conductance quantization. he necessary condition to have well-deined conductance plateaus in a three-dimensional constriction was shown (Torres et al. 1994) to be (∂R / ∂z)2 0 for every possible deformation (δρ, δ�) satisfying the constraint (6.18).

6.5.1 Rayleigh Instability It is instructive to forget about quantum-size efects for a moment and to perform a stability analysis in the classical limit. For simplicity, one can restrict oneself to axial symmetry (i.e., � ≡ 0). In the classical limit, the grand canonical potential is given by the leading order terms of the Weyl approximation, Ω Weyl = −ωV + σs S, and changes under the perturbation (6.21) by δ Ω Weyl 2 = −2π ( ρω − σs ) ρ0 ε + π | ρq | ⎡⎣ −ω + q 2 ρσs ⎤⎦ ε 2 . L q ≠0

∑

(6.23) Because of the constraint (6.18) on possible deformations, ρ0 can be expressed in terms of the other Fourier coeicients. Volume conservation, e.g., implies ρ0 = −(ε/ 2 ρ) Σ q ≠ 0 |ρq |2 and δ Ω Weyl (q) πσs = L ρ

h is shell correction can be accounted for by a quantum-mechanical stability analysis based on the WKB approximation introduced in Section 6.3.2. he use of this approximation can be justiied a posteriori by a full quantum calculation (Urban and Grabert 2003, Urban et al. 2007), which shows that the structural stability of metal nanowires is indeed governed by their response to long-wavelength perturbations. he response to short-wavelength perturbations on the other hand controls a Peierls-type instability characterized by the opening of a gap in the electronic energy dispersion relation. h is quantummechanical instability, which is missing in the semiclassical WKB approximation, in fact limits the maximal length of stable nanowires. Nevertheless, if the wires are short enough, and/or the temperature is not too low, the full quantum calculation essentially coni rms the semiclassical results. A systematic expansion of Equation 6.13 yields Ω(1) =4 L/λF Ω(2) = EF L/λF

∑ n

∑ q

EF − En EF

ρ0 ⎞ ⎛ ′ ⎜⎝ Λ 0 ⋅ En − 2 En ρ ⎟⎠ ,

†

⎛ ρq / ρ⎞ ⎛ Aρρ ⎜ Λ ⎟ ⎜A ⎝ q ⎠ ⎝ Λρ

AρΛ ⎞ ⎛ ρq / ρ⎞ , AΛΛ ⎟⎠ ⎜⎝ Λ q ⎟⎠

(6.25)

(6.26)

where the elements of the matrix A in Equation 6.26 are given by

Aρρ =

4 En ⎡ ⎢3 EF − En − 3/2 F ⎢ ⎣

∑E n

AΛρ = −

En 4 En′ ⎡ ⎢ EF − En − 3/2 2 EF − E n F ⎢⎣

⎤ ⎥, ⎥⎦

En′ ⋅ (En′ )† 1 ⎡ ⎢ E E E 2 − − ′′ n n F EF3/2 ⎢ EF − E n ⎣

⎤ ⎥ ⎥⎦

∑E n

AΛΛ =

⎤ ⎥, EF − E n ⎦⎥ En

∑ n

(6.27) and

Aρ, Λ = AΛ, ρ .

∑|ρ | (ρ q q

2

2 2

2

− 1) ε ,

(6.24)

q≠0

which has to be positive in order to ensure stability. Since q is −. restricted to integer multiples of 2π/L, stability requires L < 2πρ his is just the criterion of the classical Rayleigh instability (Chandrasekhar 1981): A wire longer than its circumference is unstable and likely to break up into clusters due to surface tension.

6.5.2 Quantum-Mechanical Stability Analysis he crucial ingredient to the stabilization of metal nanowires is the oscillatory shell correction δΩ to the grand canonical potential (Equation 6.17), which is due to quantum-size efects. * Assuming periodic boundary conditions, the perturbation wave vectors q must be integer multiples of 2π/L. In order to ensure that ρ(z) and �(z) are real, we have ρ− q = ρ*q and Λ − q = Λ*q .

Here, En′ denotes the gradient of En with respect to �, and E n′′ is the matrix of second derivatives. he bar indicates evaluation − −, Λ at (ρ ). he number of independent Fourier coeicients in Equation 6.21 is restricted through the constraint (6.18) on allowed deformations. Hence, ater evaluating the change of the geometric quantities V , S, and C due to the deformation, we can use Equation 6.18 to express ρ0 in terms of the other Fourier coeficients, yielding an expansion ρ0 = ρ0(0) + ερ0(1) + O (ε 2 ) . his expansion then needs to be inserted in Equations 6.25 and 6.26, thereby modifying the irst-order change of the energy Ω(1) and the stability matrix A (Urban et al. 2006). Stability requires that the resulting modiied stability matrix à be positive deinite. Results at inite temperature are obtained essentially in a similar fashion, by integrating Equation 6.2 numerically.

6-9

The Nanoscale Free-Electron Model

Stability coefficient α

0.2 0 –0.2 –0.4

T=0 T = 0.05 TF

–0.6 2

4

6

Radius – ρ (kF–1)

8

10

FIGURE 6.3 WKB stability coeicient, calculated using a constant-volume constraint. he sharp negative peaks at the opening of new channels − = γ ) are smeared out with increasing temperature T. (i.e., when k F ρ n

6.5.3 Axial Symmetry A straightforward application of the method outlined above is the stability analysis of cylindrical wires with respect to axisymmetric volume conserving perturbations. In this speciic case, �(z) ≡ 0 and ρ0 = −(ε / 2 ρ) Σ q ≠0 |ρq| 2 . herefore, Equation 6.25 takes the form Ω(1) ≡ 0 and Equation 6.26 simpliies to read 2 Ω(2) = EF ρq / ρ α ( ρ), L/λF q ≠0

∑

(6.28)

− ~ where the stability coeicient α(ρ ) ≡ A ρρ reads (Urban et al. 2006) α(ρ) =

4 γ n2 ⎡

∑ θ(k ρ − γ ) (k ρ) ⎢⎢4 F

n

n

F

2

⎣

1−

⎤ ⎥. ⎥ ⎦ (6.29)

2 1 γn − 2 (kF ρ)2 (kF ρ)2 − γ n

Axial symmetry implies the use of the transverse eigenenergies −)2, cf. Equation 6.4. his result, valid for zero temEn /EF = (γn /kF ρ perature, is plotted as a function of radius in Figure 6.3 together with a numerical result at inite temperature. Sharp negative −k = γ indicate peaks at the subband thresholds, i.e., when ρ F n strong instabilities whenever a new channel opens. On the other hand, α is positive in the regions between these thresholds giving rise to intervals of stability that decrease with increasing temperature. hese islands of stability can be identiied with the “magic radii” found in experiments. As will be shown below, one has to go beyond axial symmetry in order to give a full explanation of the observed conductance histograms of metal nanowires.

6.5.4 Breaking Axial Symmetry It is well known in the physics of crystals and molecules that a Jahn–Teller deformation breaking the symmetry of the system can be energetically favorable. In metal clusters, Jahn–Teller deformations are also very common, and most of the observed structures show a broken spherical symmetry. By analogy, it is

natural to assume that for nanowires, too, a breaking of axial symmetry can be energetically favorable, and lead to more stable deformed geometries. Canonical candidates for such stable non-axisymmetric wires are wires with a cos(mφ)-deformed cross section (i.e., having m-fold symmetry), a special case of Equation 6.14 with only one nonzero λm. he quadrupolar deformation (m = 2) is expected to be the energetically most favorable of the multipole deformations* since deformations with m > 2 become increasingly costly with increasing m, their surface energy scaling as m2. he results of Section 6.5.2 can straightforwardly be used to determine stable quadrupolar conigurations by intersection of −, −λ )| = 0, and the convex regions, the stationary curves, Ω(1)(ρ 2  − − Ω(2)(ρ, λ 2)| > 0. he result is a so-called stability diagram, which shows the stable geometries (at a given temperature) in conigu− ration space, that is a function of the geometric parameters ρ − and λ 2 . An example of such a stability diagram is shown later in Figure 6.6 for the case of aluminum, discussed in Section 6.5.7. Results for all temperatures can then be combined, thus adding a third axis (i.e., temperature) to the stability diagram. Finally, the most stable conigurations can be extracted, dei ned as those geometries that persist up to the highest temperature compared to their neighboring conigurations. Table 6.2 lists the most stable deformed sodium wires with quadrupolar cross section, obtained by the procedure described above. he deformation of the stable structures is characterized by the parameter λ2 or equivalently by the aspect ratio a=

1 − λ 22 /2 + λ 2 1 − λ 22 /2 − λ 2

.

(6.30)

Clearly, nanowires with highly deformed cross sections are only stable at small conductance. he maximum temperature up to which the wires remain stable, given in the last column of Table 6.2, * he dipole deformation (m = 1) corresponds, in leading order, to a simple translation, plus higher order multipole deformations. herefore, the analysis can be restricted to m > 1.

6-10

Handbook of Nanophysics: Principles and Methods TABLE 6.2 Most Stable Deformed Wires with Quadrupolar Cross Sections G/G0

a

λ2

Tmax/Tρ

2 5 9 29 59 72 117 172

1.72 1.33 1.22 1.13 1.11 1.08 1.06 1.06

0.26 0.14 0.10 0.06 0.05 0.04 0.03 0.03

0.50 0.49 0.50 0.54 0.49 0.39 0.55 0.50

Source: Adapted from Urban, D.F. et al., Phys. Rev. B, 74, 245414, 2006. Note: he irst column gives the quantized conductance of the corresponding wire. Both the aspect ratio a and the value of the deformation parameter λ2 are given. he maximum temperature of stability Tmax is given for each wire. In all cases, the surface tension was set to 0.22 N/m, corresponding to Na.

−). he use of this characterisis expressed in units of Tρ: = TF /(k Fρ tic temperature relects the temperature dependence of the shell correction to the wire energy (Urban et al. 2006). Deformations with higher m cost more and more surface energy. Compared to the quadrupolar wires, the number of stable conigurations with three-, four-, ive-, and sixfold symmetry, their maximum temperature of stability, and their size of the deformations involved all decrease rapidly with increasing order m of the deformation. For m > 6, no stable geometries are known. All this relects the increase in surface energy with increasing order m of the deformation.

6.5.5 General Stability of Cylinders It is possible to derive the complete stability diagram for cylinders, i.e., to determine the radii of cylindrical wires that are

stable with respect to arbitrary small, long-wavelength deformations (Urban et al. 2006). At irst sight, considering arbitrary deformations, and therefore theoretically an ini nite number of perturbation parameters seems a formidable task. Fortunately, the stability matrix à for cylinders is found to be diagonal, and therefore the diferent Fourier contributions of the deformation decouple. his simpliies the problem considerably, since it allows to determine the stability of cylindrical wires with respect to arbitrary deformations through the study of a set of pure m-deformations, i.e., deformations as given by Equation 6.14 with only one nonzero λm. Figure 6.4 shows the stable cylindrical wires (in dark gray) as a function of temperature. he surface tension was i xed at the value for Na, see Table 6.1. he stability diagram was obtained by intersecting a set of individual stability diagrams allowing cos(mφ) deformations with m ≤ 6. his analysis coni rms the extraordinary stability of a set of wires with so-called magic radii. hey exhibit conductance values G/G0 = 1, 3, 6, 12, 17, 23, 34, 42, 51, …. It is noteworthy that some wires that are stable at low temperatures when considering only axisymmetric perturbations, e.g., G/G 0 = 5, 10, 14, are found to be unstable when allowing more general, symmetry-breaking deformations. he heights of the dominant stability peaks in Figure 6.4 exhibit a periodic modulation, with minima occurring near G/G 0 = 9, 29, 59, 117, …. he positions of these minima are in perfect agreement with the observed supershell structure in conductance histograms of alkali metal nanowires (Yanson et al. 2000). Interestingly, the nodes of the supershell structure, where the shell efect for a cylinder is suppressed, are precisely where the most stable deformed nanowires are predicted to occur (see Section 6.5.4). hus, symmetry-breaking distortions and the supershell efect are inextricably linked. Linear stability is a necessary—but not a suicient—condition for a nanostructure to be observed experimentally. he linearly stable nanocylinders revealed in the above analysis are in fact metastable structures, and an analysis of their lifetime has been

Quantum conductance [G0] 1

1

3

6

12 17 23

34 42 51

67 80

94 105

129 144 158

187 207 228 255 282

T/Tρ

0.8 0.6 0.4 0.2 0

0

10

20 Radius – ρ [kF–1]

30

FIGURE 6.4 Stability of metal nanocylinders versus electrical conductance and temperature. Dark gray areas indicate stability with respect to − (see text). he surface tension was taken as 0.22 N/m, corresponding arbitrary small deformations. Temperature is displayed in units of Tρ = TF/k F ρ to Na. (Adapted from Urban, D.F. et al., Phys. Rev. B, 74, 245414, 2006.)

6-11

The Nanoscale Free-Electron Model Quantum conductance (G0) 1

30

3

6

9

12 17 23 29 34 42 51 59 67 72 80 94 105 117 129 144 158 172 187

0

a = 1.11

10

0

5

a = 1.08

a = 1.06

a = 1.13 a = 1.2

rms radius – ρ (k F–1)

20

a = 1.06

Most stable cylindrical and quadrupolar wires Experimental data

10 15 Wire index/conductance peak number

20

25

FIGURE 6.5 Comparison of the experimental shell structure for Na, taken from Yanson et al. (1999), with the theoretical predictions of the most stable Na nanowires. Non-axisymmetric wires are labeled with the corresponding aspect ratio a. (Adapted from Urban, D.F. et al., Phys. Rev. Lett., 93, 186403, 2004a.)

carried out within an axisymmetric stochastic ield theory by Bürki and Staford (2005). here is a strong correlation between the height of the stable ingers in the linear stability analysis and the size of the activation barriers ΔE, which determines the nanowire lifetime τ through the Kramers formula τ = τ0 exp(ΔE/kBT). his suggests that the linear stability analysis, with temperature −), provides a good measure of expressed in units of Tρ = TF /(kFρ the total stability of metal nanowires. In particular, the “universal” stability of the most stable cylinders is reproduced, wherein the absolute stability of the magic cylinders is essentially independent of radius (aside from the small supershell oscillations).

6.5.6 Comparison with Experiments A detailed comparison between the theoretically most stable structures and experimental data for sodium is provided in Figure 6.5. For each stable inger in the linear stability analysis, its mean conductance is extracted and plotted as a function of its index number, together with experimental data by Yanson et al. (1999). h is comparison shows that there is a one-to-one relation between observed conductance peaks and theoretically stable geometries which in particular allows for a prediction of the cross-sectional shape of the wires. his striking it is only possible when including non-axisymmetric wires, which represent roughly 25% of the most stable structures and which are labeled by the corresponding aspect ratios a, as shown in Figure 6.5. he remaining 75% of the principal structures correspond to the magic cylinders. he role of symmetry in the stability of metal nanowires is thus fundamentally diferent from the case of atomic nuclei or metal clusters, where the vast majority of

stable structures have broken symmetry. he crucial diference between the stability of metal nanowires and metal clusters is not the shell efect, which is similar in both cases, but rather the surface energy, which favors the sphere, but abhors the cylinder. Besides the geometries entering the comparison above, the stability analysis also reveals two highly deformed quadrupolar nanowires with conductance values of 2G 0 and 5G 0, cf. Table 6.2. hey are expected to appear more rarely due to their reduced stability relative to the neighboring peaks, and their large aspect ratio a that renders them rather isolated in coniguration space.* Nevertheless they can be identiied by a detailed analysis of conductance histograms of the alkali metals (Urban et al. 2004b).

6.5.7 Material Dependence Results for diferent metals are similar in respect to the number of stable conigurations and the conductance of the wires. On the other hand, the deviations from axial symmetry and the relative stability of Jahn–Teller deformed wires is sensitive to the material-speciic surface tension and Fermi temperature. he relative stability of the highly deformed wires decreases with increasing surface tension, σ s /(EFkF2 ) , measured in intrinsic units, and this decrease becomes stronger with increasing order m of the deformation. herefore, for the simple s-orbital metals under consideration (Table 6.1), deformed Li wires have the highest and Au wires have the lowest relative stability compared to * A nanowire produced by pulling apart an axisymmetric contact has a smaller probability to transform into a highly deformed coniguration than into a neighboring cylindrical coniguration.

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Handbook of Nanophysics: Principles and Methods

cylinders of “magic radii.”* Notable in this respect is aluminum with σ s = 0.0017EFkF2 , some ive times smaller than the value for Au. Aluminum is a trivalent metal, but the Fermi surface of bulk Al resembles a free-electron Fermi sphere in the extended-zone scheme. his suggests the applicability of the NFEM to Al nanowires, although the continuum approximation is more severe than for monovalent metals. Recent experiments (Mares et al. 2007) have found evidence for the fact that the stability of aluminum nanowires also is governed by shell-i lling efects. Two magic series of stable structures have been observed with a crossover at G ≃ 40G 0 and the exceptionally stable structures have been related to electronic and atomic shell efects, respectively. Concerning the former, the NFEM can quantitatively explain the conductance and geometry of the stable structures for wires with G > 12G 0 and there is a perfect one-to-one correspondence of the predicted stable Al nanowires and the experimental electron-shell structure. Moreover, an experimentally observed third sequence of stable structures with conductance G/G 0 ≃ 5, 14, 22 provides intriguing evidence for the existence of “superdeformed” nanowires whose cross sections have an aspect ratio near 2:1. heoretically, these wires are quite stable compared to other highly deformed structures and, more importantly, are very isolated in coniguration space, as illustrated in the stability diagram shown in Figure 6.6. his favors their experimental detection if the initial structure of the nanocontact formed in the break junction is rather planar with a large aspect ratio since it is likely that the aspect ratio is maintained as the wire necks down elastically. Aluminum is unique in this respect and evidence of superdeformation has not been reported in any of the previous experiments on alkali and

Deformation parameter λ2

0.4

0.3

0.2

0.1

0.0 6

8

10 rms radius – ρ [kF–1]

12

14

FIGURE 6.6 Stability diagram for Al wires at i xed temperature T = 0.45 Tρ. hick lines mark stable wires in the coniguration space of − and deformation parameter λ . he dashed box emphasizes rms radius ρ 2 a series of very stable superdeformed wires, whose peanut-shaped cross section is shown as an inset. his sequence was recently identiied experimentally. (From Mares, A.I. et al., Nanotechnology, 18, 265403, 2007.) * Concerning the absolute stability, we have to consider that the lifetime of a metastable nanowire also depends on the surface tension (Bürki and Staford 2005).

noble metals, presumably because highly deformed structures are intrinsically less stable than nearly axisymmetric structures due to their larger surface energy.

6.6 Summary and Discussion In this chapter, we have given an overview of the NFEM, treating a metal nanowire as a noninteracting electron gas coni ned to a given geometry by hard-wall boundary conditions. At i rst sight, the NFEM seems to be an overly simple model, but closer study reveals that it contains very rich and complex features. Since its irst introduction in 1997, it has repeatedly shown that it captures the important physics and is able to explain qualitatively, when not quantitatively, many of the experimentally observed properties of alkali and noble metal nanowires. Its strengths compared to other approaches are, in particular, the absence of any free parameters and the treatment of electrical and mechanical properties on an equal footing. Moreover, the advantage of obtaining analytical results allows the possibility to gain some detailed understanding of the underlying mechanisms governing the stability and structural dynamics of metal nanowires. he NFEM correctly describes electronic quantum-size efects, which play an essential role in the stability of nanowires. A linear stability analysis shows that the classical Rayleigh instability of a long wire under surface tension can be completely suppressed by electronic shell efects, leading to a sequence of certain stable “magic” wire geometries. he derived sequence of stable, cylindrical, and quadrupolar wires explains the experimentally observed shell and supershell structures for the alkali and noble metals as well as for aluminum. he most stable wires with broken axial symmetry are found at the nodes of the supershell structure, indicating that the Jahn–Teller distortions and the supershell efect are inextricably linked. In addition, a series of superdeformed aluminum nanowires with an aspect ratio near 2:1 is found, which has lately been identiied experimentally. A more elaborate quantum-mechanical analysis within the NFEM reveals an interplay between Rayleigh and Peierls-type instabilities. he latter is length dependent and limits the maximal length of stable nanowires but other than that conirms the results obtained by the long-wavelength expansion discussed above. Remarkably, certain gold nanowires are predicted to remain stable even at room temperature up to a maximal length in the micrometer range, suicient for future nanotechnological applications. he NFEM can be expanded by including the structural dynamics of the wire in terms of a continuum model of the surface dif usion of the ions. Furthermore, defects and structural luctuations may also be accounted for. hese extensions improve the agreement with experiments but do not alter the main conclusions. However, the NFEM does not address the discrete atomic structure of metal nanowires. With increasing thickness of the wire, the efects of surface tension decrease and there is a crossover from plastic low of ions to crystalline order, the latter implying atomic shell efects observed for thicker nanowires.

The Nanoscale Free-Electron Model

herefore, the NFEM applies to a window of conductance values between a few G 0 and about 100G0, depending on the material under consideration. Promising extensions of the NFEM in view of current research activities are directed, e.g., toward the study of metal nanowires in nanoelectromechanical systems (NEMS) which couple nanoscale mechanical resonators to electronic devices of similar dimensions. he NFEM is ideally suited for the investigation of such systems since it naturally comprises electrical as well as mechanical properties. It is hoped that the generic behavior of metal nanostructures elucidated by the NFEM can guide the exploration of more elaborate, material-speciic models in the same way that the free-electron model provides an important theoretical reference point from which we can understand the complex properties of real bulk metals.

References Agraït, N., J. G. Rodrigo, and S. Vieira. 1993. Conductance steps and quantization in atomic-size contacts. Phys. Rev. B 47: 12345. Agraït, N., A. Levy Yeyati, and J. M. van Ruitenbeek. 2003. Quantum properties of atomic-sized conductors. Phys. Rep. 377: 81. Ashcrot, N. W. and N. D. Mermin. 1976. Solid State Physics. Saunders College Publishing, Philadelphia, PA. Brack, M. 1993. he physics of simple metal clusters: Selfconsistent jellium model and semiclassical approaches. Rev. Mod. Phys. 65: 677. Brack, M. and R. K. Bhaduri. 1997. Semiclassical Physics, volume 96 of Frontiers in Physics. Addison-Wesley, Reading, MA. Brandbyge, M., J. Schiøtz, M. R. Sørensen et al. 1995. Quantized conductance in atom-sized wires between two metals. Phys. Rev. B 52: 8499. Bürki, J. 2007a. Discrete thinning dynamics in a continuum model of metallic nanowires. Phys. Rev. B 75: 205435. Bürki, J. 2007b. Front propagation into unstable metal nanowires. Phys. Rev. E 76: 026317. Bürki, J. and C. A. Staford. 1999. Comment on “Quantum suppression of shot noise in atomic size metallic contacts”. Phys. Rev. Lett. 83: 3342. Bürki, J. and C. A. Staford. 2005. On the stability and structural dynamics of metal nanowires. Appl. Phys. A 81: 1519. Bürki, J., C. A. Staford, X. Zotos, and D. Baeriswyl. 1999. Cohesion and conductance of disordered metallic point contacts. Phys. Rev. B 60: 5000. ibid. Phys. Rev. B 62: 2956 (2000) (Erratum). Bürki, J., R. E. Goldstein, and C. A. Staford. 2003. Quantum necking in stressed metallic nanowires. Phys. Rev. Lett. 91: 254501. Bürki, J., C. A. Staford, and D. L. Stein. 2005. heory of metastability in simple metal nanowires. Phys. Rev. Lett. 95: 090601. Chandrasekhar, S. 1981. Hydrodynamic and Hydromagnetic Stability. Dover Publishing Company, New York.

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Dashen, R., S.-K. Ma, and H. J. Bernstein. 1969. S-matrix formulation of statistical mechanics. Phys. Rev. 187: 345. Datta, S. 1995. Electronic Transport in Mesoscopic Systems. Cambridge University Press, Cambridge, U.K., pp. 48–170. de Heer, W. A. 1993. he physics of simple metal clusters: Experimental aspects and simple models. Rev. Mod. Phys. 65: 611. Díaz, M., J. L. Costa-Krämer, E. Medina, A. Hasmy, and P. A. Serena. 2003. Evidence of shell structures in Au nanowires at room temperature. Nanotechnology 14: 113. García-Martin, A., J. A. Torres, and J. J. Sáenz. 1996. Finite size corrections to the conductance of ballistic wires. Phys. Rev. B 54: 13448. Glazman, L. I., G. B. Lesovik, D. E. Khmel’nitskii, and R. I. Shekter. 1988. Relectionless quantum transport and fundamental ballistic-resistance steps in microscopic constrictions. JETP Lett. 48: 239. Kassubek, F., C. A. Staford, and H. Grabert. 1999. Force, charge, and conductance of an ideal metallic nanowire. Phys. Rev. B 59: 7560. Kassubek, F., C. A. Staford, H. Grabert, and R. E. Goldstein. 2001. Quantum suppression of the Rayleigh instability in nanowires. Nonlinearity 14: 167. Kondo, Y. and K. Takayanagi. 1997. Gold nanobridge stabilized by surface structure. Phys. Rev. Lett. 79: 3455. Kondo, Y. and K. Takayanagi. 2000. Synthesis and characterization of helical multi-shell gold nanowires. Science 289: 606. Krans, J. M., J. M. van Ruitenbeek, V. V. Fisun, I. K. Yanson, and L. J. de Jongh. 1995. he signature of conductance quantization in metallic point contacts. Nature 375: 767. Landman, U., W. D. Luedtke, N. A. Burnham, and R. J. Colton. 1990. Atomistic mechanisms and dynamics of adhesion, nanoindentation, and fracture. Science 248: 454. Lang, N. D. 1973. he density-functional formalism and the electronic structure of metal surfaces. Solid State Phys. 28: 225. Mares, A. I. and J. M. van Ruitenbeek. 2005. Observation of shell efects in nanowires for the noble metals Cu, Ag, and Au. Phys. Rev. B 72: 205402. Mares, A. I., A. F. Otte, L. G. Soukiassian, R. H. M. Smit, and J. M. van Ruitenbeek. 2004. Observation of electronic and atomic shell efects in gold nanowires. Phys. Rev. B 70: 073401. Mares, A. I., D. F. Urban, J. Bürki, H. Grabert, C. A. Staford, and J. M. van Ruitenbeek. 2007. Electronic and atomic shell structure in aluminum nanowires. Nanotechnology 18: 265403. Martin, T. P. 1996. Shells of atoms. Phys. Rep. 273: 199. Messiah, A. 1999. Quantum Mechanics. Dover Publishing Company, New York. Moreland, J. and J. W. Ekin. 1985. Electron tunneling experiments using Nb-Sn break junctions. J. Appl. Phys. 58: 3888. Muller, C. J., J. M. van Ruitenbeek, and L. J. de Jongh. 1992. Conductance and supercurrent discontinuities in atomicscale metallic constrictions of variable width. Phys. Rev. Lett. 69: 140. Perdew, J. P., Y. Wang, and E. Engel. 1991. Liquid-drop model for crystalline metals: Vacancy-formation, cohesive and facedependent surface energies. Phys. Rev. Lett. 66: 508.

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Plateau, J. 1873. Statique Expérimentale et héorique des Liquides Soumis aux Seules Forces Moléculaires. Gauthier-Villars, Paris, France. Rodrigues, V., T. Fuhrer, and D. Ugarte. 2000. Signature of atomic structure in the quantum conductance of gold nanowires. Phys. Rev. Lett. 85: 4124. Rubio, G., N. Agraït, and S. Vieira. 1996. Atomic-sized metallic contacts: Mechanical properties and electronic transport. Phys. Rev. Lett. 76: 2302. Staford, C. A., D. Baeriswyl, and J. Bürki. 1997. Jellium model of metallic nanocohesion. Phys. Rev. Lett. 79: 2863. Staford, C. A., F. Kassubek, J. Bürki, H. Grabert, and D. Baeriswyl. 2000a. Cohesion, conductance, and charging efects in a metallic nanocontact, in Quantum Physics at the Mesoscopic Scale. EDP Sciences, Les Ulis, Paris, France, pp. 49–53. Staford, C. A., J. Bürki, and D. Baeriswyl. 2000b. Comment on “Density functional simulation of a breaking nanowire”. Phys. Rev. Lett. 84: 2548. Stalder, A. and U. Dürig. 1996. Study of yielding mechanics in nanometer-sized Au contacts. Appl. Phys. Lett. 68: 637. Strutinsky, V. M. 1968. Shells in deformed nuclei. Nucl. Phys. A 122: 1. Todorov, T. N. and A. P. Sutton. 1993. Jumps in electronic conductance due to mechanical instabilities. Phys. Rev. Lett. 70: 2138. Torres, J. A., J. I. Pascual, and J. J. Sáenz. 1994. heory of conduction through narrow constrictions in a three dimensional electron gas. Phys. Rev. B 49: 16581. Untiedt, C., G. Rubio, S. Vieira, and N. Agraït. 1997. Fabrication and characterization of metallic nanowires. Phys. Rev. B 56: 2154. Urban, D. F. and H. Grabert. 2003. Interplay of Rayleigh and Peierls instabilities in metallic nanowires. Phys. Rev. Lett. 91: 256803. Urban, D. F., J. Bürki, C. H. Zhang, C. A. Staford, and H. Grabert. 2004a. Jahn-Teller distortions and the supershell efect in metal nanowires. Phys. Rev. Lett. 93: 186403.

Handbook of Nanophysics: Principles and Methods

Urban, D. F., J. Bürki, A. I. Yanson, I. K. Yanson, C. A. Staford, J. M. van Ruitenbeek, and H. Grabert. 2004b. Electronic shell efects and the stability of alkali nanowires. Solid State Commun. 131: 609. Urban, D. F., J. Bürki, C. A. Staford, and H. Grabert. 2006. Stability and symmetry breaking in metal nanowires: he nanoscale free-electron model. Phys. Rev. B 74: 245414. Urban, D. F., C. A. Staford, and H. Grabert. 2007. Scaling theory of the Peierls charge density wave in metal nanowires. Phys. Rev. B 75: 205428. van Wees, B. J., H. van Houten, C. W. J. Beenakker et al. 1988. Quantized conductance of point contacts in a twodimensional electron gas. Phys. Rev. Lett. 60: 848. Weyl, H. 1911. Über die asymptotische Verteilung der Eigenwerte. Nachr. akad. Wiss. Göttingen 110–117. Wharam, D. A., T. J. hornton, R. Newbury et al. 1988. Onedimensional transport and the quantisation of the ballistic resistance. J. Phys. C Solid State Phys. 21: L209. Yanson, A. I., I. K. Yanson, and J. M. van Ruitenbeek. 1999. Observation of shell structure in sodium nanowires. Nature 400: 144. Yanson, A. I., I. K. Yanson, and J. M. van Ruitenbeek. 2000. Supershell structure in alkali metal nanowires. Phys. Rev. Lett. 84: 5832. Yanson, A. I., I. K. Yanson, and J. M. van Ruitenbeek. 2001. Shell efects in alkali metal nanowires. Fizika Nizkikh Temperatur 27: 1092. Zhang, C. H., F. Kassubek, and C. A. Staford. 2003. Surface luctuations and the stability of metal nanowires. Phys. Rev. B 68: 165414. Zhang, C. H., J. Bürki, and C. A. Staford. 2005. Stability of metal nanowires at ultrahigh current densities. Phys. Rev. B 71: 235404.

7 Small-Scale Nonequilibrium Systems 7.1 7.2

Introduction ............................................................................................................................. 7-1 Systems in Equilibrium........................................................................................................... 7-1 Fundamental Laws of hermodynamics • hermodynamics of a System in a Heat Bath • Statistical Mechanics and the Boltzmann Distribution

Peder C. F. Møller University of Copenhagen

Lene B. Oddershede University of Copenhagen

7.3

Nonequilibrium Systems ........................................................................................................7-6 Kramers Formula • Fluctuation–Dissipation Relations • Jarzynski’s Equality • Crooks Fluctuation heorem

7.4 Conclusion and Outlook....................................................................................................... 7-16 References........................................................................................................................................... 7-16

7.1 Introduction hermodynamics have proven very successful in describing physical systems in equilibrium. However, most of the systems surrounding us are, in fact, not in equilibrium. Systems out of equilibrium are diicult to describe from a physics point of view, and only little theory on such systems exists in comparison to the wealth of knowledge about thermodynamics of systems in equilibrium. One of the remaining tasks of thermodynamics is to extract thermodynamical values from systems undergoing out-of-equilibrium irreversible processes. For many systems surrounding us, the relaxation toward equilibrium is so slow that we do not experience it and do not care about it. One example is diamond, whose lattice at room temperature and normal pressure decays slowly toward graphite, the main substance of a pencil. However, the decay of a diamond is so slow in comparison to a human lifetime that they are highly valued in spite of their transient nature (Figure 7.1). Another example of a system that relaxes slowly is a mixture of oxygen and hydrogen. When a spark is added, the mixture burns rapidly and forms water, but if let alone the mixture relaxes toward water at a very slow rate. And for any explosive, it is paramount that the energyreleasing reaction does not happen spontaneously, but only when requested. With the advances of nanoscopic techniques, it is possible to monitor systems on length scales down to nanometers, and at timescales below microseconds. At these distances and timescales, thermal luctuations cannot be ignored. Macroscopic objects typically contain on the order of 1023 entities, and luctuations around the average value are neglectable. But, when observing on the nanometer level, one typically observes a

single entity, e.g., a single functioning biological molecule with a high temporal resolution, and luctuations are signiicant. If the nano-technique in addition exerts a force on the system studied, it is likely that the system is evolving through a nonequilibrium process with a corresponding energy dissipation. he aim of this chapter is to present a theoretical framework and practical examples of how to deal with small-scale nonequilibrium systems with focus on how to extract thermodynamic values, such as the free energy, from a nonequilibrium behavior. Section 7.2 presents the most important knowledge about systems in equilibrium, introducing thermodynamic quantities and terminology that are needed also to describe the nonequilibrium systems. Section 7.3 goes through the most commonly used and easily applicable theories, which apply to small systems out of equilibrium. hese encompass Kramers equations, luctuation–dissipation relations, and inally Jarzynski’s equality and Crooks luctuation theorem, the latter two having the powerful property that they apply to systems arbitrarily far from equilibrium. Every nonequilibrium theory presented is accompanied by examples of how to apply the particular theory to a small-scale system.

7.2 Systems in Equilibrium To clarify how the nonequilibrium dynamics, which is the subject of the subsequent sections, difer from equilibrium statistical mechanics, we here give a brief reminder of some of the basic assumptions and main results of equilibrium systems. Consider the staggering information needed to characterize the state of one liter of a noble gas at ambient temperature and pressure: It contains about 2 × 1022 atoms, giving 6 × 1022 position coordinates 7-1

7-2

Handbook of Nanophysics: Principles and Methods

Time

FIGURE 7.1 Diamonds are thermodynamically unstable at ambient conditions and spontaneously transform into the less spectacular graphite which is the main component of the everyday pencil. he fact that this process does not happen in spite of being thermodynamically favorable tells us, that not only is it interesting to know which reactions occur, but also the rate with which they occur.

and 6 × 10 velocity coordinates, or 10 diferent parameters! And if the gas is not a noble gas, more parameters are needed to characterize the diferent rotations and vibrations of each molecule. In spite of the practically ininite amount of information needed to describe the gas, it is completely characterized even if only a very few parameters of the system are known, for example, the volume, the temperature, and the pressure. h inking about it, this condensation of information from 1023 parameters to only three is truly spectacular! And the one thing that allows us to reduce the relevant information by such a terriic extent is the implicit assumption that the system is in equilibrium. It is the great success of statistical mechanics that using only very few and reasonable assumptions along with the assumption of equilibrium allows us to deduce macroscopic properties of systems of seemingly untreatable complexity. 22

23

7.2.1 Fundamental Laws of Thermodynamics 7.2.1.1 The First Law of Thermodynamics he i rst law of thermodynamics states that the change of the internal energy of a closed system, Δ E, is the sum of the heat added to the system, Q, and the work done on the system, W (see Figure 7.2): Δ E = Q + W.

(7.1)

hus, the irst law of thermodynamics is simply stating that energy is conserved, and that heat is a form of energy. Consider now an isolated system with energy, E, volume, V, and number of particles, N. In equilibrium, the system is completely characterized by (E, V, N), but for nonequilibrium macrostates, an additional variable, α, is needed to specify how the system difers

ΔE

Q W

FIGURE 7.2 he energy of an isolated system increases by Δ E = Q + W where Q is the heat added to the system and W is the work done on the system.

from the equilibrium state. Examples of α could be a parameter designating the local temperature in a system out of thermal equilibrium, or specifying the nonequilibrium transport of particles resulting from an external force (say, ions in an electric ield). For given values of (E, V, N, α), there will be a huge number of possible microscopic arrangements of the system consistent with those macroscopic constraints. h is number of microstates consistent with (E, V, N, α) is denoted by Ω(E, V, N, α) and called the statistical weight of state (E, V, N, α). Ω(E, V, N, α) is used to dei ne the entropy S of a system in the macrostate (E, V, N, α) by S(E ,V , N , α) ≡ kB ln(Ω(E ,V , N , α)),

(7.2)

where kB = 1.381 · 10−23 J/K is Boltzmann’s constant. 7.2.1.2 The Second Law of Thermodynamics he second law of thermodynamics states that for any process in an isolated system the entropy always increases (or is unchanged if the process is reversible), and that the equilibrium state is the state where the entropy attains its maximum under the constraints (E, V, N). h is means that S(E, V, N) ≥ S(E, V, N, α) for any α, and that α evolves in time so that if t2 ≥ t1, then S(E, V, N, α(t2)) ≥ S(E, V, N, α(t1)). Following the deinition of entropy, this means that systems move toward macrostates compatible with a higher number of microstates until the macrostate consistent with the maximum number of microstates is achieved—the equilibrium state. his also means that as the system evolves, the macroscopic constraints (E, V, N, α(t)) gives less and less information about the microstate of the system since more microstates are compatible with (E, V, N, α(t)). h is is why the second law of thermodynamics is sometimes popularly interpreted as saying that “the degree of disorder of an isolated system increases with time.” As an example, consider the situation where gas particles are coni ned into one-half of a system by a wall that is suddenly removed (Figure 7.3). hen α(t) is initially specifying that one-half on the system has a particle density of zero. As time progresses, particles moving toward the region with many particles will move only a small distance before their direction is randomized by impact with other particles, while particles moving toward the region less dense in particles will move a longer distance before their direction is randomized. Ater a short time, the density of particles changes gradually (and no longer abruptly) from a high value in the let

Time

Time

FIGURE 7.3 In a system where gas particles were initially concentrated in one-half of the system, the system is speciied by (E, V, N, α) where α speciies how the system deviates from the equilibrium state of a system with the constraints (E, V, N). As time progresses the density of particles will become increasingly uniform (which α(t) will describe) until the equilibrium state of uniform density which maximizes the entropy of the system is achieved.

7-3

Small-Scale Nonequilibrium Systems

end of the system to a very low value in the right end of the system, and α(t) is describing this gradual transition. It is clear that this change has increased Ω(E, V, N, α(t)), and hence S(E, V, N, α(t)), and also increased the degree of disorder of the system. When a longer time has passed, the density will be uniform in the entire system and α(t) is no longer needed to describe the system since this state of course corresponds to the equilibrium state—the state where S(E, V, N, α) is maximized.

7.2.2 Thermodynamics of a System in a Heat Bath Consider an isolated system divided into two subsystems (with parameters (E1, V1, N1) and (E2, V2, N2)) that can exchange only heat. hen E1 and E2 can vary as long as E = E1 + E2 is constant, implying that Δ E1 = −Δ E2 (see Figure 7.4). According to the second law of thermodynamics, the system is in thermal equilibrium at the value of E1 that maximizes the total entropy S(E1, E 2). Since for a given value of E1 the arrangement of the one subsystem does not afect the other: Ω(E1, E2) = Ω1(E1)Ω2(E2), and hence S(E1, E2) = S1(E1) + S2(E2), so the requirement for equilibrium becomes ΔS =

⎡ dS dS1 dS dS ⎤ ΔE1 + 2 ΔE2 = ⎢ 1 − 2 ⎥ ΔE1 = 0. dE1 dE2 ⎣ dE1 dE2 ⎦

(7.3)

his means that in thermal equilibrium when T1 = T2, dS1/dE1 = dS2/dE2. herefore, dS/dE is somehow a measure of the temperature of a system. his fact is used to deine the absolute temperature of a system as 1/T = dS/dE (this dei nition of temperature is of course identical to the one normally used). h is means that ΔS = ΔE(dS/dE) = ΔE/T for any system at temperature T, and combining this with the irst law of thermodynamics (ΔE = Q + W) and the fact that no work was done on the system, gives Q = TΔS so that the heat added to a system at temperature T is equal to the entropy added times the temperature. If system 2 is much bigger than system 1, energy exchange between the two systems does not afect the temperature of system 2, which is then called a heat bath or heat reservoir. It is not true that the processes which can happen in system 1 are simply the processes for which ΔS1 ≥ 0, since the second law of thermodynamics is stated only for an isolated system (which does not exchange heat with its surroundings). But for system 1 plus system 2, the second law can be used to show

S1

S2 +ΔE1

–ΔE2

FIGURE 7.4 If energy can be transferred between two subsystems of an isolated system, Δ E1 = −Δ E2.

ΔS = ΔS1 + ΔS2 = ΔS1 +

ΔE2 ΔE = ΔS1 − 1 ≥ 0. T T

(7.4)

herefore, for a system that can exchange only energy with a heat bath (not volume or particles), the processes that are allowed according to the second law of thermodynamics are the processes that obey ΔE − TΔS ≤ 0. Combining this relation with the dei nition of Helmholtz free energy, F ≡ E − TS, the spontaneous processes are seen to obey ΔF = ΔE − TΔS − SΔT ≤ − SΔT, which is zero if the temperature is constant. So at constant (T, V, N) spontaneous processes obey ΔF ≤ 0, F ≡ E − TS.

(7.5)

For a system that can exchange both energy and volume (and hence work) with its surroundings, but is kept at constant temperature, pressure, p, and particle number, a similar relation can be derived for the Gibbs free energy, G ≡ E − TS + pV. At constant (T, p, N) spontaneous processes obey ΔG ≤ 0, G ≡ E − TS + pV .

(7.6)

Since most of the processes around us happen at ambient temperature and pressure, the Gibbs free energy change of a process is the quantity that usually tells us which processes occur spontaneously and which do not. Even if an exothermal process temporarily increases the temperature of a real system in thermal contact with its surroundings, the change from before the reaction to ater the reaction and the overall temperature equilibration is a process where ΔT = 0 and the whole process only occurs spontaneously if the total change in Gibbs free energy is negative. At ambient temperature and pressure, the Gibbs free energy of a carbon atom in a graphite structure is about 3 kJ/mol lower than that of a carbon atom in a diamond structure. Hence, diamonds spontaneously transform into graphite. he fact that diamonds seem to be forever in spite of the process Cdiamond → Cgraphite having a change in Gibbs free energy of ΔG = −3 kJ/mol tells us that apart from knowing in which direction a system out of equilibrium will evolve, it is also very valuable to know how fast a nonequilibrium system evolves toward the equilibrium state. One might think that the reason why diamonds appear stable is that ΔG of the process is not very large, but it is not as simple as that. For instance, a sodium and chloride ion in a crystal (NaCl) lower their total ΔG by only 9 kJ/mol when they dissolve in water, yet this process is very fast compared to the decay of diamonds. Also, the burning of a mixture of hydrogen and oxygen into water (a process we know releases a lot of energy and where ΔG = −237 kJ/mol) does not happen before you strike a match; the mixture appears stable even though the reaction releases a lot of energy. So even energetically very favorable reactions do not necessarily progress rapidly, and reactions that release only very little energy can readily occur. he key to understanding this is to know the probability, p(s), that a molecule is in a state, s, with energy, E s, as function of temperature. his probability distribution is known as the Boltzmann distribution.

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Handbook of Nanophysics: Principles and Methods

7.2.3 Statistical Mechanics and the Boltzmann Distribution he assumption that forms the basis of all of statistical mechanics is the postulate of equal a priori probability which claims that for an isolated system with a given set of constraints—say (E, V, N, α)—each microstate consistent with the macroscopic constraints is equally likely to occur. his means, for example, that if someone hid a coin under one of three cups at random, it is equally likely to be found under cup 1, cup 2, and cup 3, and since the coin is under one of the cups, the probability of these three outcomes must sum to one. So the probability of inding the coin under any one cup is 1/3. To take a less trivial example, consider the situation where a system (system 1) can exchange energy with a heat bath (system 2). hen the probability, p(s), of inding the system in one speciic microstate, s, with energy, Es, is proportional to the statistical weight of the heat bath having energy Etot − Es where Etot is the total energy of the two subsystems. his is because there is one way of preparing the system in state s, and Ω2(Etot − Es) ways of preparing the heat bath in a state which takes up the remainder of the total energy of the two systems. So the total number of ways to prepare the system and the heat bath in a state where the system is in state s is 1 · Ω2(Etot − Es). his gives ⎡ S ( E − Es ) ⎤ p(s) ∝ Ω2 (Etot − Es ) = exp ⎢ 2 tot ⎥ kB ⎣ ⎦

(7.7)

according to the dei nition of entropy (Equation 7.2). And if E s > EA the probability of inding the system in state A is nearly 1. his means that p ≈ exp(−(EC − EA)/kBT), so the reaction rate of the process A → B is given by ⎛ E − EA ⎞ , rA → B = ω exp ⎜ − C ⎝ kBT ⎟⎠

(7.14)

where ω is the frequency with which the system oscillates around state A and where the energy diference EC − EA is called the energy barrier toward the reaction A → B. his formula is immensely helpful for getting a rough understanding of chemical and biological reaction rates. Even though the frequency ω does vary from molecule to molecule, the efect this variation has on the reaction rate is oten small compared to a change in the energy barrier (changing ω by a factor of 1000 has a smaller efect on the reaction rate than changing the energy barrier by a factor of 7). Equation 7.14 shows that the rate of a reaction does not depend on how much energy is released during the reaction, but rather on the energy barrier that must be overcome. And it allows us to understand why diamonds are practically stable and sodium chloride crystals in water are not: For an ion in a NaCl crystal to go into solution, it suices to simply move into the solvent so one expects the energy barrier for this reaction to be very low and the reaction to occur rapidly. But for a carbon atom to change from having four bonds in diamond to three (stronger) bonds in graphite, the energy barrier should be on the order of the energy of the single C–C bond that must be broken. his is roughly EC − EA = 346 kJ/mol = 138 kBT per bond at a temperature of 25°C. A reasonable value for ω is about 1014 s−1 so the probability for a diamond carbon atom to become a graphite carbon atom is about p ≈ ω exp(−Ebarrier/kBT) ≈ 1014 exp(−138) s−1 ≈ 10−46 s−1. So one has to wait around 1046 s for a diamond to turn into graphite, and since the age of the universe is ∼ 1017 s the decay of diamonds into graphite really is not something to worry about! Another thing that can be seen from Equation 7.14 is that if the temperature is increased, the efective energy barrier Ebarrier/ kBT becomes smaller and reactions that have some reaction

barrier will occur more rapidly. If the temperature is doubled, the efective reaction barrier is cut in half and the reaction rate is increased by a factor of exp(2) ≈ 7. A factor of 7 is not bad, but it is not making a huge diference either. But it is also seen that if the energy barrier can be somehow reduced, this can potentially have a much bigger afect on the reaction rate than an increase of the temperature. And this is exactly what an inorganic catalyst or an enzyme does by changing the energy of the system along the reaction coordinate. his typically happens by the catalyst/ enzyme somehow binding to the intermediate state, C, thus lowering its free energy and hence the energy barrier. his is why catalysts and enzymes can facilitate reactions without being spent themselves (they do not use any energy either); they simply lower the energy of a transitory state thus making a reaction that is thermodynamically favorable happen faster by lowering the energy barrier for the reaction. hese changes in the energy barrier can be quite impressive and since the reaction rate depends on the exponential of the energy barrier the change in the reaction rate can be huge. For example, an inorganic catalyst can easily increase the reaction rate by a factor of 104, and enzymes can easily increase reaction rates by an impressive factor of 1023. his means that enzymes can make reactions that would not happen in the lifetime of the universe happen in a fraction of a second! his terminates the section on equilibrium thermodynamics and statistical mechanics, and we now have the tools necessary to consider nonequilibrium systems. A good undergrad textbook regarding statistical mechanics of equilibrium systems is Statistical Physics by F. Mandl [1] while a good graduate text is Introduction to Modern Statistical Mechanics by D. Chandler [2].

7.3 Nonequilibrium Systems In Section 7.2, the systems were assumed to be in equilibrium, which was necessary for the derivations. Historically, the irst nonequilibrium theories concerned systems that in some sense are close to being in equilibrium, and knowledge about the equilibrium state was used to make predictions about the close-toequilibrium behavior. Here “being close to equilibrium” means that the force driving the system out of equilibrium generates a linear response, that is, doubling the force results in a doubling of the response. We have already seen one such example when using the transition state theory to predict the rates with which species, initially in the metastable state A, escapes through the transition state, C, to the stable state B. here, it was assumed that the ratio of systems in states A and C was the same as in the equilibrium situation (i.e., given by the Boltzmann distribution), in spite of this not being the case for the ratio of systems in states A and B. If one makes absolutely no assumptions about anything being in equilibrium, it is not possible to make predictions unless all parameters of all individual particles (typically on the order of 1023 parameters) are known, so any successful theory must make some equilibrium assumption. he early theories such as Kramers formula and the luctuation–dissipation relations assume that the system is being driven close to the equilibrium, but the more recent theories of Jarzynski and Crook assume only

7-7

Small-Scale Nonequilibrium Systems

that the initial and inal states of the process are in equilibrium, the process itself can be driven arbitrarily far from equilibrium!

dif usion, D being the dif usion constant, which according to the well-known Einstein relation, is given by D = k BT/ζ. Since F = −dE pot /dq, j can be rewritten as

7.3.1 Kramers Formula In the transition state theory for reactions treated above, it was implicitly assumed that the frictional forces in the system are very low compared to inertial forces. It was assumed that a system that passes state A with a kinetic energy high enough to overcome the energy barrier will keep this energy and actually pass through state C into state B. But if there is friction in the system, not all the kinetic energy of the system will be turned into potential energy needed for climbing the energy barrier. Some of the kinetic energy will be dissipated through friction. In 1940, H. A. Kramers made a more detailed treatment of the rate of a reaction with an energy barrier where he included the role of friction [3]. his result is of particular interest to nanoscale systems where frictional forces are generally much bigger than inertial forces. hat is, the motion of a nanoscale object is Brownian and not ballistic. Consider a large ensemble of identical systems with free energy landscapes, as shown in Figure 7.6b, and with each system characterized by the position, q, and the momentum, p, along the reaction coordinate. he ensemble of systems is then completely described by ρ(p, q, t) = the probability density that a system has momentum p and position q at time t. If the ensemble is in equilibrium, this probability distribution is given by the Boltzmann distribution ⎛ ⎛ Epot (q, t ) ⎞ ⎛ E ⎞ p2 ⎞ exp ⎜ − , (7.15) ρ( p, q, t ) ∝ exp ⎜ − tot ⎟ = exp ⎜ − ⎟ ⎝ kBT ⎠ kBT ⎠ ⎝ ⎝ 2mkBT ⎟⎠

j=−

j=

σF dσ −D . ζ dq

B

∫

B

ζe

Epot /kBT

jdq = −kBT

A

he irst term is the probability density times the drit speed, F/ζ, and results from the force F. he second term is simply

d

∫ dq (σe

Epot /kBT

)dq = kBT ⎡ σe ⎣

Epot /kBT

A

A

⎤ . ⎦B (7.18)

In a stationary state, the lux, j, is constant at each point between A and B since otherwise there would be a net accumulation or loss of density somewhere. So, inally A

E /k T kBT ⎡σe pot B ⎤ k Tσ E /k T ⎣ j = B Epot /kBT ⎦ B ≈ B BEpot /kBAT , σ A = (σe pot B )near A dq dq ∫ A ζe ∫ A ζe (7.19)

where the last equality is true since σA >> σB because the system started out entirely in state A. Equation 7.19 gives the lux of density from state A to state B. he reaction rate for the transition A → B, rA → B, is the fraction of systems in state A that changes to state B per unit time, so rA → B = j/nA where nA is the density of particles near A. If the potential is harmonic near A, Epot = K Aq2/2 and nA is given by

nA ≈

∫

−∞

⎛ K q2 ⎞ σ A exp ⎜ − A ⎟ dq = σ A 2πK AkBT ⎝ 2kBT ⎠

(7.20)

where the limits of integration is taken at ±∞ because the integrant is nonzero only near A. hus rA → B =

j ≈ nA

kBT KA ζ

∫

B

e

.

Epot /kBT

(7.21)

dq

A

he main contribution to the integral E

/k T

∫ exp ⎝⎜ ⎜⎝ E

barrier

∫

B

e

Epot /kBT

dq comes

A

from the region near C where e pot B is large. Here, the potential energy is approximately harmonic: E pot ≈ E barrier − K B q2/2, so that B

(7.16)

(7.17)

and by rearranging and integrating both sides between A and B one obtains

∞

since the total energy is a sum of the potential and kinetic energies, Etot = Epot + Ekin = Epot + p2/2m (where m is the mass of the system moving along q). But, if all systems start out in state A, the ensemble is not in equilibrium and the probability is not Boltzmann distributed. However, if the frictional force, vζ (where v is the velocity and ζ is the frictional constant), is much bigger than the potential force, F(q) = −dEpot(q)/dq, frictional forces will dominate over potential forces, so the momentum distribution will be independent of q and be distributed according to the Boltzmann distribution so that ρ(p, q, t) ≈ σ(q, t) exp(−p2/2k BT), where σ(q, t) is the probability density that a system is at position q at time t, i.e., the momentum distribution is in equilibrium, but the position distribution is not. So, the momentum distribution is constant in time while the probability density, σ, undergoes a slow dif usion process where the lux of probability density, j, has two components:

kBT − Epot /kBT d E /k T (σe pot B ), e ζ dq

∫ A

⎛ Epot ⎞ ≈ exp ⎜ ⎝ kBT ⎟⎠

∞

−∞

⎛⎛

−

⎞ K Bq 2 ⎞ kBT ⎟ dq ⎟ 2 ⎠ ⎠

⎛E ⎞ = exp ⎜ barrier ⎟ 2πK BkBT . ⎝ kBT ⎠

(7.22)

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Handbook of Nanophysics: Principles and Methods

Finally, one obtains Kramers equation for the reaction rate rA → B =

K A K B − Ebarrier /kBT e . 2πζ

(7.23)

When this result is compared to the reaction rate for a non-dif usive reactions (Equation 7.14), it can be seen that the dependence on the energy barrier is the same for the two expressions, but in the difusive reaction, the reaction rate depends on both the curvature of the energy landscape near A and C, rather than just on the dynamics near A as is the case for the non-dif usive reactions. 7.3.1.1 Application of Kramers Formula to Small-Scale Nonequilibrium Systems Optical tweezers is the name for a technique which can trap a small bead with an index of refraction higher than the surrounding medium by focused laser light [4]. he very high spatial resolution of this technique (on the order of nanometers) together with

V [units of kBT]

10 5

z2

z0

0 –5

z1

–10 0

50

100 150 z [nm]

200

250

FIGURE 7.7 he total potential of an optically trapped bead as function of distance, z, from the wall is a sum of the harmonic interaction with the trap (centered at z0) and the van der Waals interaction with the wall. he potential will always be lowest at the wall, but if z 0 is above some critical value, there will be an energy barrier for the bead to overcome before it can escape to the wall. z1 denotes the local minimum of the total potential, and z2 denotes the local maximum. (Reprinted from Dreyer, J.K. et al., Phys. Rev. E, 73, 051110, 2006, Figure 2. With permission.)

the range in which the spring constant of the harmonic trapping potential can be varied (10−2−102 pN/nm) makes this tool practical for investigating small-scale systems, including cells and their components. Trapping a small bead by optical tweezers and moving it near a solid wall has been used to experimentally verify Kramers formula and serves as a nice model system for probing the dynamics of nanoscale systems [5]. Besides the harmonic force from the optical trap, the bead also feels the van der Waals attraction from the wall, FvdW = −AR/6z, where A is the Hamaker constant of the van der Waals interaction between bead and wall, R is the radius of the bead, and z is the distance from the wall. So the total potential for a bead in an optical trap near a wall is given by Vtot (z ) = Vharm (z ) + VvdW (z ) =

If z0 is above some critical value, zc, the potential has both a local minimum (at z1) and a local maximum (at z2) and the total potential looks as shown in Figure 7.7. If z is below zc, there is no energy barrier at all for the bead to move to the wall which it will do “instantaneously.” Since the optical trapping force is weak compared to the Brownian forces on the bead, the escape rate of such a bead is given by Kramers equation (Equation 7.23): rtrap→ wall = ( K1K 2 兾 2πζ)exp(−ΔV ) where ΔV = [V(z2) − V(z1)]/ kBT is the energy barrier in units of k BT. In Ref. [5], the center of the trap was moved toward the wall with constant speed, v = −dz 0/dt, and the bead position was recorded when it escaped the trap and jumped to the wall. he outcome of an experiment where the bead jumps a distance of 157 nm is shown in Figure 7.8a. Figure 7.8b shows how the average jump length decreases as the approach velocity is increased, demonstrating that the bead escapes from the trap by a nonequilibrium process. he fact that the jump length depends on the approach speed shows that thermal noise is important and that the system is driven far from equilibrium. From Kramers formula, an equation for the probability distribution of the jump lengths can be derived: 160

100

0

5

Jump length [nm]

z [nm]

200

157 nm

(a)

(7.24)

where z0 is the center of the optical trap K1 is the spring constant of the trap

300

0

K1 AR (z − z 0 )2 − 2 6z

10 t [s]

140

120 10

(b)

20

40 v [nm/s]

80

FIGURE 7.8 (a) As the center of an optical trap with the bead is approaching a wall with speed v = −dz0/dt, the trapped bead position luctuates around the local minimum that moves toward the wall. At some distance the bead jumps and sticks to the wall (no further luctuations). In this particular experiment the jump length was 157 nm. (b) he average jump length is seen to decrease as the approach speed is increased, demonstrating that the escape process is nonequilibrium. (Reprinted from Dreyer, J.K. et al., Phys. Rev. E, 73, 051110, 2006, Figure 1. With permission.)

7-9

Small-Scale Nonequilibrium Systems 0.04

7.3.2.1 The Einstein Relation z* [nm]

140 0.03

130 120

H (z0)

110 10

0.02

20 40 v [nm/s]

80

0.01

A small particle in suspension is constantly experiencing random impacts by solvent molecules, and each impact changes the velocity of the particle slightly. Ater some time, the velocity of the particle is completely uncorrelated with its initial velocity. In other words, the particle travels for some time in one direction and at some point starts traveling in an uncorrelated direction. With the average time between randomizations denoted by τ = 〈t〉br and the average root-mean-square distance traveled between randomizations by L = x 2

0

100

120

140 160 z0 [nm]

180

200

FIGURE 7.9 he experimentally obtained probability distribution for the trap position at which the bead jumps to the wall using an approach speed of 20 nm/s. he full line is a it by Equation 7.25 which is seen to agree well with the data. he dashed line shows a Gaussian it for comparison. he inset shows how the itting parameter z* changes with the approach speed. (Reprinted from Dreyer, J.K. et al., Phys. Rev. E, 73, 051110, 2006, Figure 4. With permission.)

⎡ −α (z − z ) ⎤ H (z 0 ) ≈ α exp ⎢ −α( z0 − z* ) − e 0 * ⎥ ⎣ ⎦

1/2 br

, the motion of a particle

is described by a random walk: each time step, τ, a particle moves a distance, L, in a random direction. Consider, for simplicity, a particle moving only in one dimension so that its position ater N steps is given by x =

∑

N i =1

ki L where ki = −1 if step i moved

the particle to the let and ki = 1 if step i moved the particle to the right. Since the probability of moving to the let and the right are equal 〈 x N 〉 = L

∑

N i =1

ki = 0 , but the mean square of the par-

ticle displacement is not: x N2 = (x N −1 + kN L)2 = 〈 x N2 −1 〉

(7.25)

where the most likely jump distance, z*, and the local slope of the dΔV total potential, α = , are itting parameters that both dz 0 z0=z * depend on the approach speed. In Figure 7.9, the experimentally obtained jump lengths for an approach speed of 20 nm/s are itted with Equation 7.25 and the agreement is seen to be quite good, conirming that Kramers formula can be successfully applied to thermal systems out of equilibrium, and that thermal noise is important for such processes.

7.3.2 Fluctuation–Dissipation Relations If a system is in equilibrium, any free parameter will luctuate around its average value. For instance the instantaneous velocity, v, of a Brownian particle luctuates around the expectation value 〈v〉 = 0. his is what gives rise to Brownian motion. If a system is driven through a nonequilibrium process, energy is irreversibly dissipated. If a force is applied to a Brownian particle for instance, it will dif use in the direction of the force and dissipate an energy of Ediss = Fx where F is the force on the particle and x the distance traveled. A luctuation–dissipation relation is a relation between the spontaneous equilibrium luctuation on the one side and the dissipation resulting from a nonequilibrium process on the other side. Such relations are possible because the processes that cause luctuations in the equilibrium state are the same processes that dissipate energy during nonequilibrium processes. By far, the most well-known example of a luctuation– dissipation relation is the Einstein equation for the self-dif usion of a Brownian particle [6] which will be derived here.

+ 2L〈 x N −1kN 〉 + L2 kN2 = x N2 −1 + L2 kN2

(7.26)

where the last step uses that 2L 〈xN − 1 kN〉 = 0 since the probability for jumping let or right is independent of the particle position. hen, by iteration 〈 x N2 〉 = NL2, and since the particle takes N = t/τ steps in a time t x N2 = 2Dt , where D ≡ L2 /2τ.

(7.27)

For a random walk in three dimensions 〈r 2〉 = 〈x 2 + y 2 + z2〉 = 3〈x2〉 so rN2 = 6Dt , where D ≡ L2 /2τ.

(7.28)

Hence, the random kicks a particle gets do cause it to displace itself from its initial position even if this displacement does not have any preferred direction (〈x〉 = 0). Consider now a random walker in one dimension also under inluence of an external force, F. Now, τ is the average time between collisions but also the average time since the velocity of a particle was last randomized. So the average velocity of a particle changes from 〈vx 〉 = 0 to 〈vx〉 = 〈tF/m〉 = τF/m where m is the mass of a particle. h is velocity resulting from the external force is called the drit speed, vd = 〈vx〉, and the ratio between force and drit speed can be measured macroscopically and is called the friction coeicient, ζ = F/vd = m/τ. Multiplying the friction coeicient with the dif usion coeicient, D, gives ζD = (m/τ)(L2/2τ) = mL2/τ2/2. By dei nition, L2 = 〈 x 2 〉 br = 〈v x2t 2 〉 br = 〈v x2 〉 br 〈t 2 〉 br, and by the equipartition theorem 〈v x2 〉 br = 〈v x2 〉 = kBT /m , so that ζD can be written

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Handbook of Nanophysics: Principles and Methods

ζD =

kBT t 2

br

2τ2

.

(7.29)

To ind a relation between 〈 t2 〉br and τ = 〈 t 〉br, note that vdτ = 〈 x 〉br = 〈 Ft2/2m 〉br = F〈 t2 〉br/2m since a particle just ater a collision on average starts out with zero velocity in the x direction and then undergoes acceleration, a = F/m, until the next randomization. But since vd = τF/m, τ2F / m = vdτ = F 〈 t2 〉br/2m so that 〈 t2 〉br = 2τ2. Inserting this into Equation 7.29 and rearranging gives D=

xt2 kBT = . ζ 2t

(7.30)

his relation which was originally obtained by Einstein is remarkable. Historically, it is very interesting since this relation allowed scientists to determine exactly how many carbon-12 atoms are in 12 g of carbon-12, namely, 6.02 · 1023. his number is known as the Avogadro number, NA, and was unknown until the arrival of this equation by Einstein and the subsequent experimental determination of how fast a Brownian particle in water dif uses. he experiment allowed for a determination of the Boltzmann constant, kB, by measuring ζ, T, and xt2 /t and using Einstein’s relation. his in turn allowed for a determination of the Avogadro number via NA = R/kB, since the gas constant, R, was already known from experiments on ideal gases. Equation 7.30 is also very interesting for a more fundamental reason. It is a relation between equilibrium luctuations of a Brownian particle and the energy dissipated during a nonequilibrium process (an external force pulling the particle through a luid). To see this more clearly, the relation x(t ) = D = limt →∞ xt2 /2t =

∫

∞

t

∫ v(t′)dt′ can be used to rewrite 0

position, x = 0, an external force of F = Kx1 is needed. But the work needed to move the sphere to x1 depends on the way in which it is moved there. If the sphere is initially at x = 0 and F is suddenly imposed, it will move toward x 1 where it will i nally come

total work would have been W =

0

∫ v(0)v(t ) dt.

(7.31)

0

From this equation, it is clearly seen how the nonequilibrium response, vd, (and hence the energy dissipated per unit time, Ediss pr. unit time = vd F) of v to an external force depends on the equilibrium luctuations of the same quantity. So Einstein’s relation from 1905 is a manifestation of the general luctuation– dissipation relation proved in 1951 [7]. 7.3.2.2 The Variance of Dissipated Work Another manifestation of the luctuation–dissipation relation connects the thermal luctuation to the variation of the work dissipated when driving a system out of equilibrium. When driving a system in a nonequilibrium manner, work is inevitably dissipated. Consider, for instance, a sphere surrounded by luid and connected to a spring with spring constant K. To keep the spring at a displacement x1 from the potential minimum

0

∫

Fdx =

x1

0

Kx1 dx = Kx12 .

∫

x1

0

F dx =

∫

x1

0

Kx dx = Kx12 /2,

which is only half the work done when immediately imposing F = Kx 1. At the same time, the potential energy of the spring has been increased by ΔEpot = Fx1/2 so when the process is driven in equilibrium (suiciently slowly) all the work done on the system is stored as potential energy, but when the process is driven in a nonequilibrium manner, work is dissipated: Wdiss = Wtot − ΔE pot. If the thermal luctuations have a signiicant impact on the sphere velocity, the work dissipated when driving the system out of equilibrium will not be exactly the same each time the experiment is done. Sometimes, the thermal kicks the sphere gets will resist the motion a bit more than the average, sometimes a bit less. h is variation of the dissipated work can be related to the thermal noise of the system. Let λ denote a generalized coordinate along which a system is driven and let λ0 designate the equilibrium position as function of time. If the system is driven from λ0 = 0 to λ0 = 1 with a constant rate, dλ0 / dt, then the variance of the dissipated work can be computed as follows [8]. hermal luctuations mean that the instantaneous position, λ1, of the system is luctuating around the equilibrium value, λ0(t), but if the system is not driven too far from equilibrium, the luctuations will not be too large and the instantaneous potential energy of these luctuations is given by U (λ 0 , λ 1 ) ≈ U (λ 0 ) +

age replaces the average over initial times. Hence, the Einstein relation can be rewritten as ∞

x1

But if the force had been increased suiciently slowly from 0 to Kx1, the position would at all times be given by x = F/K and the

v(0)v(t ) dt , where the ensemble aver-

F F F vd = = D= ζ kBT kBT

∫

to rest. he total work is then W =

K (λ1 − λ 0 )2 . 2

(7.32)

If the probability density, ρ(λ1), is not in equilibrium, it will change in time. As in Equation 7.16, the lux of probability density is a combination of dif usion and the force resulting from the derivative of the local potential, U(λ0, λ1). Because the distribution moves with speed dλ0 / dt without changing shape (the system is close to equilibrium), the lux is not zero, but equal to ρ(λ1)(dλ0 / dt): −

dλ kBT dρ(λ1 ) 1 dU (λ 0 , λ1 ) − ρ(λ1 ) = ρ(λ1 ) 0 . dλ1 dt ζ dλ1 ζ

(7.33)

his diferential equation is integrated to give the steady state distribution 2 ⎛ ζ dλ 0 ⎤ ⎞ ⎡ ⎜ − K ⎢ λ1 − λ 0 + ⎟ K dt ⎥⎦ ⎟ ⎣ ρ(λ1 ) = exp ⎜ . ⎜ ⎟ 2kBT ⎜ ⎟ ⎝ ⎠

(7.34)

7-11

Small-Scale Nonequilibrium Systems

he shape of the distribution is not changed in time, but its center, 〈λ1〉, lags behind the shiting value of λ0 by an amount (ζ/K)(dλ0/dt). he total work done on the system is given by W=

1

∫ (dU (λ , λ ) dλ )dλ , and the variance of the work is 0

0

1

0

2

0

2

2

deined as σ (W ) = W − W where Ā denotes the nonequilibrium ensemble average of A (which depends on the nonequilibrium probability distribution ρ(λ1)). If the process lasts much longer than the relaxation time for internal luctuations, τ = ζ/K, the work integral can be approximated as a sum: 1

W=

∫ 0

dU (λ 0 , λ1 ) dλ 0 ≈ dλ 0

N

∑ i =1

dU (λ 0 , λ1 ) 1 dλ , with N τ 0 = 1. N dλ 0 dt

his means that ⎛1 σ 2 (W ) = σ 2 ⎜ ⎝N

N

∑ i =1

dU (λ 0 , λ1 ) ⎞ 2 2 ⎛ dU (λ 0 , λ1 ) ⎞ ⎟ = σ ⎜ ⎟⎠ , ⎝ dλ 0 N d λ0 ⎠

(7.35)

where the last equality is true because the variance of (dU(λ0, λ1)/ dλ0) does not depend on λ0, because (dU(λ0, λ1)/dλ0) at times t and t + τ are nearly but not quite uncorrelated, and because N ⎛ ⎞ of the statistical relation σ2 ⎜ Xi / N ⎟ = σ2 ( X )/ N which ⎝ ⎠ i =1 holds when the stochastic variables Xi all have variance σ2(X) and are completely uncorrelated. Since the nonequilibrium probability distribution is only shited compared to the equilibrium distribution and their shapes are identical, the variance of (dU(λ0, λ1)/dλ0) under a shit speed is equal to the equilibrium variance of (dU(λ0, λ1)/dλ0) when dλ0/dt = 0 so that

∑

⎛ ⎛ dU (λ 0 , λ1 ) ⎞ 2 ⎜ dU (λ 0 , λ1 ) σ2 ⎜ ⎟=σ ⎜ dλ 0 dλ 0 ⎝ ⎠ ⎜ ⎝ ⎡ dU (λ0 ) ⎤ = ⎢ + K (λ1 − λ0 )⎥ ⎣ dλ 0 ⎦

2

−

⎞ ⎟ ⎟ dλ0 =0 ⎟ dt ⎠

(7.36)

dU (λ0 ) + K (λ1 − λ0 ) dλ 0

2

= K 2 (λ1 − λ 0 )2 ,

(7.37)

(7.38)

where Equation 7.32 and the fact that 〈(λ1 − λ0)〉 = 0 have been used. From the equipartition theorem, 〈K 2(λ1 − λ0)2〉 = 2K〈K(λ1 − λ0)2/2〉 = Kk BT. Finally, the equation for the variance of work for the process becomes σ2 (W ) = since

the

1

∫ ζ (dλ 0

0

2 dλ KkBT = 2ζ 0 kBT = 2kBTWdiss dt N

dissipated

work

is

Wdiss = −

(7.39)

1

∫F 0

friction

dλ 0 =

dt )dλ 0 = ζ (dλ 0 dt ) . his is yet another luctuation–

dissipation relation. It relates the dissipated work for driving a nonequilibrium process to the equilibrium luctuations. As

is the case for all luctuation–dissipation relations, Equation 7.39 is valid only if the system is driven close to the equilibrium state. In Section 7.3.3, an exact equation for the dissipated work, valid arbitrarily far from equilibrium, will be derived from Jarzynski’s equality, and Equation 7.39 will be seen to be included in that result. he general luctuation–dissipation relation can be formulated in many ways. One of the most useful ones is in terms of power spectra, Fourier transforms, and impedances [9].

7.3.3 Jarzynski’s Equality Most nonequilibrium theories deal with systems that are close to an equilibrium state. One exception is Jarzynski’s equality, which was published in 1997 [10]. Jarzynski’s equality deals with the case where a system can switch irreversibly between two states, e.g., a closed state (A) and an open state (B). he energy needed to switch states, e.g., to switch from A to B, is the sum of energy needed to perform the opening reversibly plus the dissipated energy: (7.40)

Wtotal = Wreversible + Wdissipated .

he reversible work, Wreversible, equals the equilibrium free energy diference, ΔF. he dissipated work, Wdissipated, is associated with the increase of entropy during the irreversible process. he following inequality is true for large N: Wtotal

N

≥ Wreversible ,

for large N

(7.41)

where 〈·〉N denotes the average over N diferent switching processes. he achievement of Jarzynski was to turn this inequality into an equality, from which the thermodynamical parameter ΔG, the change in Gibbs free energy associated with the transition between the two states, could be extracted. Jarzynski’s equality states ⎡ Wi (z , r ) ⎤ ⎡ ΔG(z ) ⎤ = lim exp ⎢ − exp ⎢ − ⎥ ⎥ N →∞ kBT ⎦ ⎣ kBT ⎦ ⎣

,

(7.42)

N

where ΔG(z) is the Gibbs free energy diference while switching from state A to B z is the reaction coordinate Wi(r, z) is the irreversible work measured while switching from A to B and is dependent both on z and on the switching rate r In general, the faster the switching rate, r, the more energy is irreversibly dissipated. he number of measurements, N, needs to be large enough for the expression on the right-hand side of Equation 7.42 to converge. How this is done in practice is shown in an example below. Two impressive things to notice about

7-12

Handbook of Nanophysics: Principles and Methods

Equation 7.42 are (1) it relates a well-deined thermodynamic quantity, ΔG, to work values measured in an irreversible process and (2) it is really an equality, not just an approximation. Here, Jarzynski’s equality is stated in terms of Gibbs free energy. Oten, it is formulated in terms of Helmholtz free energy, but if the experimental conditions are constant temperature and pressure, then the appropriate thermodynamic variable is Gibbs free energy. Upon closer inspection of Jarzynski’s theorem, Equation 7.42, it might be diicult to apply practically: If the luctuations in Wi from one measurement to the next are signiicantly larger than kBT, then the right-hand side of Equation 7.42 converges very slowly. Also, it is necessary to really measure every single work individually. herefore, the only systems to which Jarzynski’s theorem in practice applies are nanoscale systems in which the thermal luctuations of the work, Wi, are not signiicantly larger than kBT. 7.3.3.1 Application of Jarzynski’s Equality As stated above, to apply Jarzynski’s equality, it is important that the noise of the system is only on the order of k BT. In the work described in Ref. [12], they applied Jarzynski’s equality to a process where a single RNA molecule is mechanically switched between two conformations. An RNA molecule consists of a string of nucleotides, where every single nucleotide preferably forms a hydrogen bond to another speciic nucleotide. his creates secondary RNA structures, of which one is the so-called hairpin and is schematically shown in Figure 7.10. he RNA hairpin is held between two microscopic beads of which one is irmly held by a micropipette and the other by an optical trap. By moving the two beads away from each other, the hairpin is mechanically unfolded, and through the optical trap, the corresponding forces applied and distances moved can be controlled and measured. By varying the bead separation velocity, the unfolding can happen at diferent loading rates, r (=increase in applied external force per unit time). To apply Jarzynski’s equality, Equation 7.42, one has to deine a proper reaction coordinate, z, and i nd the work done to switch the system from A to B, Wi, a large number of times, N. In the

Micropipette

RNA hairpin

Optical trap

FIGURE 7.10 Schematic drawing of the experimental setup with an RNA hairpin structure mounted between two beads, one of which is held by a glass micropipette and the other held by an optical trap, capable of measuring corresponding values of forces and extensions of the RNA secondary structure. he drawing is simpliied and not to scale.

particular experiment of unfolding an RNA structure, both the change in distance between the two beads, z, as well as the external force needed to unfold the structure, F(z, r), are known. Notice that F depends strongly on the force loading rate, r. Hence, the work done can be found by z

∫

Wi (z , r ) ⯝ Fi (z ′, r )dz ′ or Wi = 0

N

∑ F Δx , j

j

(7.43)

j =1

where the second equation is for a discrete situation such as an experimental data set where N is the number of intervals used in the sum and Fj is the force acting on the system in the ini nitesimal interval Δxj. Figure 7.11 shows typical force–extension traces from unfolding and refolding an RNA hairpin. he work is found as the area under the curve as the unfolding or refolding takes place. It is clear from this igure, that at high force-loading rates there is a substantial hysteresis between the unfolding and refolding curves. Typically, the unfolding happens at a larger force than the refolding. Also, the higher the loading rate, the larger is the force needed to unfold the structure. In other words, more of the work put into the system is irreversibly dissipated at high loading rates. If the applied force-loading rate is low, the unfolding takes place during a reversible process, with an equality sign in Equation 7.41. he individually measured works, Wi, are substituted into Jarzynski’s equality, Equation 7.42, and the averaging is done. As the average is over exponential terms, exp[−Wi/k BT], the lower the value of a particular Wi, the higher its weight in the average. Wi can be negative too. Hence, the application of Jarzynski’s equality can be considered as sampling the rare trajectories in the lower tails of the work distributions [15]. One important question to address is how many experiments, N, must be performed in order to give a reliable estimate of ΔG from Jarzynski’s equality? he answer is basically that N must be large enough for Equation 7.42 to converge [15]. In general, the more work dissipated the larger N needs to be in order for Jarzynski’s equality to converge. In the study of the unfolding of RNA hairpins, Ref. [12], ΔG for the process was found in three diferent ways, all giving consistent values. One way was to conduct an unfolding of the hairpin using a loading rate low enough for the hairpin to be unfolded in a nearly reversible manner (as, e.g., shown in Figure 7.11a let trace). hen, they investigated the convergence of the Jarzynski equality as a function of the number of experiments performed, N. Figure 7.12 shows how the Jarzynski estimate of the free energy diference, ΔG, converges toward the true value as a function of distance along the reaction coordinate, z, and number of pulls, N. Ater approximately 40 pulls, the diference between the two are less than the experimental errors. Jarzynski’s equality can be rewritten as ⎡ W ⎤ ΔG = −kBT ln exp ⎢ − i ⎥ . ⎣ kBT ⎦

(7.44)

7-13

Small-Scale Nonequilibrium Systems 18

2–5 pN/s

15

34 pN/s

2–5 pN/s

52 pN/s

16

10

R

14 Force (pN)

Force (pN)

U

5

(a)

12 10 8

30 nm

(b)

Extension (nm)

50 nm

FIGURE 7.11 Force–extension traces from unfolding of RNA hairpins. (a) he let trace shows a typical force–extension trace from unfolding and refolding an RNA hairpin using a low force-loading rate, 2–5 pN/s. At this low rate the folding is nearly reversible. he unfolding and refolding takes place using a force of approximately 10 pN, the trace before and ater the unfolding/folding event shows the elongation of the DNA/RNA handles holding the hairpin. he right trace shows unfolding (U) and refolding (R) of the hairpin using a higher loading rate, 52 pN/s, where the unfolding takes place at around 12 pN and the refolding at a lower force. (b) Unfolding and refolding of two RNA hairpins at fast and slow rates. (Reprinted from Liphardt, J. et al., Science, 296, 1832, 2002, Figure 2. With permission.)

he irst two terms of the expansion, Equation 7.45, can be rewritten as

N 2010 30 40

2

0 –1

Energy (kBT )

1

ΔG ≈ W

–2 10

20 Extension z (nm)

30

FIGURE 7.12 Convergence of Jarzynski’s equality as a function of number, N of unfolding/refolding of RNA hairpins. he plot shows the numerical diference between ΔG estimated from Jarzynski’s equality and the true ΔG as a function of extension along the reaction coordinate, z, and of number of pulling cycles, N. Ater approximately 40 pulls the ΔG estimated by Jarzynski’s equality equals the true ΔG within their experimental error. Additional trajectories would further improve the convergence. (Reprinted from Liphardt, J. et al., Science, 296, 1832, 2002, Figure 4. With permission.)

he right-hand side of this equation can be expanded as a sum of cumulants [10] to give ∞

ΔG =

n −1

⎛

⎞

∑ ⎜⎝ − k1T ⎟⎠ n =1

B

N

−

σ2 . 2kBT

(7.46)

which corresponds to the case where the work distribution is Gaussian as predicted by the luctuation–dissipation theorem, Equation 7.39. In Ref. [12], the performance of the luctuation–dissipation theorem is compared to the performance of the Jarzynski equality for the unfolding of an RNA hairpin. Both at low and high loading rates, the Jarzynski equality performed better. he luctuation–dissipation theorem did increasingly worse the higher the loading rate. his is reasonable, because the theorem is only valid at near-equilibrium conditions. Consistently, the luctuation–dissipation theorem underestimated ΔG with respect to its true value. his is quite apparent from Equation 7.45 because the application of the luctuation–dissipation theorem corresponds to only using the irst two terms of the full Jarzynski expression, in particular, the third term is always positive, thus adding to the total estimate of ΔG.

7.3.4 Crooks Fluctuation Theorem ωn ω ω3 = ω1 − 2 + −⋯ n! 2kBT 6(kBT )2

(7.45)

where ωn is the nth cumulant of the distribution of works. his expansion makes it fairly easy to compare Jarzynski’s equality to the work done and to the estimate from the luctuation–dissipation theorem (see Section 7.3.2). he irst term on the right-hand side of Equation 7.45 is simply the total work done, which is a good estimate of ΔG if the process happens reversibly.

Another expression relating nonequilibrium measurable quantities to equilibrium thermodynamics that is valid for systems driven arbitrarily far from equilibrium is Crooks luctuation theorem, published in 1999 [11]. It is a generalized version of the luctuation theorem for stochastic reversible dynamics, and the Jarzynski equality is contained within Crooks luctuation theorem. Crooks luctuation theorem predicts a certain symmetry relation between the luctuations in work associated with forward and backward nonequilibrium processes. Let us consider

7-14

Handbook of Nanophysics: Principles and Methods

a structure, which can be either opened (O) or closed (C), the two processes being the reverse of each other. Let PO(W) denote the probability distribution of the work performed on the structure to open it during an ininite number of experiments, and let PC(W) denote the probability distribution of work performed by the structure on the surrounding system as it is closing. A requirement for Crooks luctuation theorem to apply to the process is that the opening and closing processes need to be related by time reversal symmetry. Also, the structure needs to start in an equilibrium state and reach a well-deined end state (the “start” can be either the open or closed structure). he Crooks luctuation theorem relates the work distributions to Gibbs free energy, ΔG, of the process: ⎛ W − ΔG ⎞ PO (W ) = exp ⎜ . ⎝ kBT ⎟⎠ PC (W )

(7.47)

he theorem applies to systems driven arbitrarily far away from equilibrium. As will be shown in the following section (Section 7.3.4.1), it is fairly easy to apply to small-scale nonequilibrium systems. At some particular value of W, the two distributions PO(W) and PC(W) might cross each other. In this case PO (W ) = PC (W ) ⇒ ΔG = W .

(7.48)

operations to open and close the structure using a constant loading rate (a requirement for Crooks luctuation theorem to hold), and inally because the folding and refolding work distributions actually do overlap over a suiciently large range to ind the situation given by Equation 7.48 from which ΔG can be found. Another important issue is that the group had alternative ways to determine the true value of ΔG which could then be compared to the value obtained from Crooks luctuation theorem. In order to use Crooks luctuation theorem, the work required to mechanically open/unfold the structure must be found. h is can be done, e.g., using the expressions from Equation 7.43. Figure 7.13 shows typical force–extension relationships for the unfolding (orange curves) and refolding (blue curves) of an RNA hairpin. Finding the work of a particular folding/unfolding event amounts to i nding the area underneath the curve during the unfolding/refolding event. During unfolding, work must be done by the optical tweezers apparatus on the RNA hairpin. During refolding, work is done by the RNA hairpin on the optical tweezers apparatus (blue area on Figure 7.13). However, for this experiment, the found value of W must also be corrected for the work going into stretching/relaxing the backbone of the structure and the handles. When a suicient number of such folding and unfolding traces have been analyzed and the corresponding work found, histograms of the folding/unfolding work distributions give information about the Gibbs free energy diference of the process.

In other words, it is very easy to determine ΔG of the reversible process from a plot where PO(W) and PC(W) are overlaid simply as the value of the work, W, where the two distributions cross each other.

25

20

7.3.4.1.1 Application of Crooks heorem to RNA Hairpins Crooks theorem has been cleverly and clearly veriied and presented in a form accessible to a larger audience through the work described in Ref. [13]. he model system and the setup was basically the same as depicted in Figure 7.10 and was also used by the same group to test Jarzynski’s equality. his is a near ideal system because of its small size, its accessibility, the possible symmetric

Force (pN)

7.3.4.1 Application of Crooks Fluctuation Theorem For practical use, Crooks luctuation theorem has some advantages over Jarzynski’s equality [13]; due to the experimental averaging Jarzynski’s equality is sensitively dependent on the experimental probing of rare events (low or even negative W values). Also, spatial drit makes it diicult to conduct reliable experimental measurements at low unfolding rates. Moreover, if one increases the loading rate, the irreversible loss is also increased and the equality converges more slowly. It seems that Crooks theorem is a bit more robust and converges more rapidly than Jarzynski’s equation. One drawback, however, is the requirement of symmetric reversible events, and the question of whether one is able to measure the work associated with both the forward and backward events experimentally.

AA G A G C U A C G U A A U C G U A C G U A A U A U U A A U C G C G G C A U G C C G G C

15

10

5΄

3΄

340

350

360 370 Extension (nm)

380

390

FIGURE 7.13 Force versus extension during the mechanical unfolding of an RNA hairpin mediated by an optical trap. he exact nucleotide sequence of the hairpin is also shown. he gray curves originates from unfolding of the hairpin, the black curves from refolding. he loading rate was 7.5 pN/s. he black area under the curve corresponds to the work returned to the optical trapping setup as the molecule is refolded. (Reprinted from Collin, C. et al., Nature, 437, 231, 2005, Figure 1. With permission.)

7-15

Small-Scale Nonequilibrium Systems

Unfolding Refolding

1.5 pN/s 7.5 pN/s 20 pN/s

0.15

RNA pseudoknot

Micropipette

0.1

Optical trap 0.05

0

FIGURE 7.15 Simpliied sketch of the setup for mechanical unfolding of an mRNA pseudoknot, the details about the settings are given in Ref. [14]. 95

100

105

110 W/kBT

115

120

FIGURE 7.14 Probability distributions PO(W) and PC(W) for folding and refolding of an RNA hairpin at three diferent loading rates. he full lines are from unfolding the structure, PO(W). he dashed lines are from refolding the structure, PC(W). he black distributions are obtained with a loading rate of 1.5 pN/s, light gray distributions with 7.5 pN/s, and dark gray distributions with 20 pN/s. (Reprinted from Collin, C. et al., Nature, 437, 231, 2005, Figure 2. With permission.)

Figure 7.14 shows work distributions for RNA hairpin unfolding and refolding; it is the numerical value of the obtained work, which has been used. he full lines show the unfolding work distributions, the dashed lines the refolding work distributions. ΔG for the process can easily be read of the graph as the work where the two distributions are equal, i.e., 110 k BT. A couple of other interesting observations are possible from Figure 7.14: (1) he slower the loading rate, the closer the folding and refolding traces are. If the folding/refolding is done at a zero loading rate, the process is reversible and the two curves fully overlap. (2) he higher the loading rate, the less Gaussian the work distributions are. he Gaussian appearance of the work distribution at low loading rates is because the luctuations are not too far from equilibrium and the process is well described by the “normal” luctuation–dissipation relation, Equation 7.39. h is example also shows that the work distributions need not be Gaussian in order for Crooks luctuation theorem to apply. 7.3.4.1.2 Application of Crooks Fluctuation heorem to RNA Pseudoknots Another more complex system to which Crooks theorem has been applied is the unfolding of RNA pseudoknots. An RNA pseudoknot is a tertiary RNA structure, which can be viewed as an RNA hairpin where the nucleotides of the loop have performed basepairings to the backbone. Hence, the structure has two stems, which have to be ruptured upon unfolding of the structure. Figure 7.15 shows a schematic drawing of an RNA pseudoknot and of the optical tweezers and micropipette setup used to perform a mechanical unfolding of the structure. In Ref. [14], it was reported that the mechanical strength needed to unfold two particular pseudoknots derived from avian

infectious bronchitis correlated with the frameshit ing eiciency of the pseudoknot. In the majority of the unfolding and refolding traces, the pseudoknot unfolded in what appeared to be a single event, and Crooks theorem was applied to i nd the Gibbs free energy diference of the unfolding process. Figure 7.16 shows the distributions of the work needed to unfold the pseudoknot and of the work liberated by refolding the structure. Occasionally intermediate states were observed in the force– extension curves resulting from unfolding the RNA pseudoknot, the intermediate state probably being a coniguration where one but not both stems had unfolded. As it is a prerequisite for applying Crooks theorem that both the initial and inal states are well dei ned and that the process is completely reversible, it is not clear that the theorem can be applied to this more complex tertiary structure if intermediate states are possibly present in the folding pathway. Hence, this example points toward future theoretical eforts, which encompass the challenge of dealing with structures going through metastable intermediate states. 10 8 6 Number

PU(W ), PR(–W )

0.2

4 2 0 50

100

150 200 Work (pN.nm)

250

300

FIGURE 7.16 Supplementary information from [14]. Probability distributions PO(W) and PC(W) for folding and refolding of a RNA pseudoknot at a loading rate of 10 pN/s. he let gray line shows the work distribution from unfolding the structure, PO(W). he right black line is the work distribution from refolding the structure, PC(W). (From Hansen, T.M. et al., PNAS, 104, 5830, 2007. With permission.)

7-16

7.4 Conclusion and Outlook Despite the abundantness of nonequilibrium processes and systems in our surroundings, only limited knowledge exists on their dynamics, the timescales involved, and on the switching processes between equilibrium states. In 1940, Kramer put forward his theory, which provides very useful information regarding the energy barriers to be crossed and the timescales involved. he luctuation–dissipation theorem from 1951 explains how the luctuations around equilibrium relates to the energy dissipated, and is very useful if the system is not too far from equilibrium. A major step forward in understanding nonequilibrium dynamics came with the publication of Jarzynski’s equality in 1997. he true strength of this expression is that it is an equality and that it applies arbitrarily far from equilibrium. A more general form, containing Jarzynski’s equality, was put forward in 1999 by G.E. Crooks, this generalized luctuation relation also holding true arbitrary far from equilibrium. In practice, as shown in this chapter, using the unfolding of RNA hairpins as an example, Crooks theorem might be slightly easier to apply to small-scale nonequilibrium systems than the Jarzynski equality. However, one requirement for applying Crooks theorem is that it is possible to exactly reverse the process and to accurately measure the work put into the system both during the process and its reverse. Future challenges will include how to correctly describe and understand larger nonequilibrium systems as well as how to deal with possible intermediate states. Jarzynski’s equality and Crooks theorem signiicantly advance thermodynamics and make thermodynamics applicable to systems from which it was previously not possible to extract equilibrium information from.

References 1. F. Mandl, Statistical Physics, John Wiley & Sons, Chichester, U.K., 1971. 2. D. Chandler, Introduction to Modern Statistical Mechanics, Oxford University Press, New York, 1987. 3. H.A. Kramers, Brownian motion in a ield of force and the difusion model for chemical reactions, Physica VII, 4 285–304, 1940.

Handbook of Nanophysics: Principles and Methods

4. K.C. Neuman and S.M. Block, Optical trapping, Review of Scientiic Instruments, 75 2787–2809, 2004. 5. J.K. Dreyer, K. Berg-Sørensen, and L. Oddershede, Quantitative approach to small-scale nonequilibrium systems, Physical Review E, 73 051110, 2006. 6. A. Einstein, On the movement of small particles suspended in stationary liquids required by the molecular-kinetic theory of heat, Annalen der Physik, 17 549–560, 1905. 7. H.B. Callen and T.A. Welton, Irreversibility and generalized noise, Physical Review, 83 34–40, 1951. 8. J. Hermans, Simple analysis of noise and hysteresis in (slow-growth) free energy simulations, Journal of Physical Chemistry, 95 9029–9032, 1991. 9. R. Kubo, he luctuation–dissipation theorem, Reports on Progress in Physics, 29 255–284, 1966. 10. C. Jarzynski, Nonequilibrium equality for free energy differences, Physical Review Letters, 78 2690–2693, 1997. 11. G.E. Crooks, Entro production luctuation theorem and the nonequilibrium work relation for free energy diferences, Physical Review E, 60 2721–2726, 1999. 12. J. Liphardt, S. Dumont, S.B. Smith, I. Tinoco Jr., and C. Bustamante, Equilibrium information from nonequilibrium measurements in an experimental test of Jarzynski’s equality, Science, 296 1832–1835, 2002. 13. C. Collin, F. Ritort, C. Jarzynski, S.B. Smith, I. Tinoco Jr., and C. Bustamante, Veriication of the Crooks luctuation theorem and recovery of RNA folding free energies, Nature, 437 231–234, 2005. 14. T.M. Hansen, S.N.S. Reihani, M.A. Sørensen, and L.B. Oddershede, Correlation between mechanical strength of messenger RNA pseudoknots and ribosomal frameshiting, PNAS, 104 5830–5835, 2007. 15. H. Oberhofer, C. Dellago, and P.L. Geissler, Biased sampling of nonequilibrium trajectories: Can fast switching simulations outperform conventional free energy calculation methods? he Journal of Physical Chemistry B, 109 6902– 6915, 2005.

8 Nanoionics

Joachim Maier Max Planck Institute for Solid State Research

8.1 Introduction: Signiicance of Ion Conduction .................................................................... 8-1 8.2 Ionic Charge Carriers: Concentrations and Mobilities .....................................................8-2 8.3 Ionic Charge Carrier Distribution at Interfaces and Conductivity Efects ....................8-5 8.4 Mesoscopic Efects ...................................................................................................................8-8 8.5 Consequences of Curvature for Nanoionics...................................................................... 8-10 8.6 Conclusions............................................................................................................................. 8-11 References........................................................................................................................................... 8-11

8.1 Introduction: Signiicance of Ion Conduction While nanoelectronics refers to electronic transport and storage phenomena on the nanoscale, “nanoionics” refers—on that same scale—to ionic transport and storage phenomena. At interfaces, and particular in conined systems, exciting ionic phenomena are observed that indeed justify the use of this term (Maier 2005b). Ion motion is no less signiicant for processes in nature and technology than motion of electrons. Well-known is the role of ion transport in liquid or semiliquid systems, a striking example being ofered by biology in terms of nerve propagation. But also as far as solids are concerned, the role of ion transport is of paramount signiicance. All mass transport phenomena in ionically bound solids require ion transport, usually in the form of simultaneous transport of ions and electrons or of diferent ions. Beyond that, there is a whole class of applications, typically energy-related applications, for which the mobile ions are indispensable and their role cannot be taken over by electronics. Such devices include batteries and fuel cells with the help of which electrical energy can be stored or just converted to chemical energy. Related applications are various types of chemical sensors, chemical i lters, or recently described resistive switches. In this case, basically chemical information is transformed into physical information. Let us discuss some electrochemical applications based on oxygen ion conductors such as Y-doped zirconia. Two diferent oxygen partial pressures on the two sides of this oxide ceramic generate a cell voltage that can be used to detect oxygen partial pressures once the value on one side is known, or even to control that partial pressure as it is done in modern automobiles. If one works with very reducing gases (e.g., hydrogen) on one side (what corresponds to a low oxygen partial pressure), while having, for example, air on the outer side, the principle of a fuel cell

is realized; this case is indicated in Figure 8.1a. In this way, H 2 is electrochemically converted to H2O. As the electrical energy can be directly used without thermal detour, Carnot’s eiciency does not apply and high theoretical eiciencies can be expected. As the solid electrolytes can typically be used at high temperatures, gases such as hydrocarbons can be converted quickly enough. If material problems that are connected with high temperatures are to be avoided, it is well advised to use proton conductors, which are mobile enough at moderate temperatures. hen the direction of the mass transport is changed and H 2O is produced on the air side where it does not pollute the fuel. Rather than just conversion, cation conductors such as Li-conductors allow for energy storage. In the same way as the cell voltage in the previous examples is given by the diference in the chemical potential of oxygen or hydrogen (partial pressure of oxygen or hydrogen), the Li-potential diference is exploited here. Unlike in previous examples, the decisive component (Li) is accommodated in a solid phase (see Figure 8.1b). his provides the possibility to eiciently store electrical energy while in the above examples, it was rather the transformation of energy that was important. he low weight of Li and its high electronegativity guarantee high energy per weight. As indicated in Figure 8.1b, Li storage (i.e., Li+ and e−) requires both ionic and electronic conductivities. Mass transport enabled by this mode is also exploited in chemical ilters. Oxygen, for example, selectively permeates through oxides, which exhibit both O2− and e− conductivities. Very related applications are gas storage applications such as for H2 provided by polar hydrides (here it is the simultaneous motion of hydrogen ions and electrons) or equilibrium conductivity sensors (conductivity efects on varied stoichiometries as response to varied partial pressures). his possibility of having both types of conductivities in the solid state enables gas i ltering by mixed conducting permeation membranes. 8-1

8-2

Handbook of Nanophysics: Principles and Methods

Chemical

Energy information

Physical

Energy information

2e–

O2– O2

H2

(a) Fuel cell

Electrolysis e–

Li+

Li+ Li+

e– (b)

FIGURE 8.1

e– Li-based battery

A few selected electrochemical applications (cf. text).

Moreover, the mixed conductor represents the general case of an electrical conductor from which the pure ion conductor and the pure electron conductor follow as special cases, making it a master material of fundamental importance. We will refer to the mixed conductor quite frequently in the following discussion.

8.2 Ionic Charge Carriers: Concentrations and Mobilities he top row of Figure 8.2 identiies typical ionic charge carriers in crystals, namely, particles in interstitial sites or vacancies (Wagner and Schottky 1930), while the bottom row refers to electronic carriers (in a localized picture).

he ionic excitation of an ion from its regular site to an interstitial site leaving behind a vacancy (Frenkel disorder) is analogous to an excitation of an electron from the valence band to the conduction band, leaving a hole in the valence band. In many cases, the electronic carriers can be connected with diferent valence states (in the absence of substantial hybridization). For example, in a component such as silver chloride, a neutral silver on an Ag+ site is equivalent to an electron in the conduction band while a missing electron on a Cl− (i.e., neutral Cl) corresponds to a hole in the conduction band. Charge delocalization (without mixing Cl and Ag orbitals) means that the varied valence states do refer to the ensemble of cations or anions rather than to a speciic identiiable ion. If we refer to a tiny energy interval and consider the statistics in a sample of constant number of lattice sites, we have to refer to Fermi–Dirac statistics in both cases. In the case of electrons, it is Pauli’s principle that excludes two electrons in the same state, and in the case of ions, it is the restriction that two ions cannot occupy the same lattice site (which ater all is, of course, also a quantum mechanical efect) (Wagner and Schottky 1930; Kirchheim 1988; Maier 2004b, 2005a). Even though the density of states is very diferent—in the case of electrons we may have delocalization and parabolic density of states, while in the case of ions we typically face sharp energies for interstitial sites—the statistics concerning the entire energy range of interest is very similar as long as the gap (standard free energy of formation) is suiciently large. he chemical potential of ions and electrons will then follow a Boltzmann distribution. Figure 8.3 shows how a Boltzmann distribution results for different cases irrespective of the details concerning nature and concentration of energy levels. Figure 8.4 refers to the ionic and electronic excitations in the energy level picture. In all cases, these energy levels are standard electrochemical potentials, while Fermi/Frenkel levels are full electrochemical potentials including also conigurational terms. (One may use the term Frenkel level to emphasize the parallelity of the

M+ X– M+ X–

M+ X– M+ X–

M M Xx M M Xx

X–

X–

Xx

M+

X–

M+

M+ X– M+ X–

X–

M+

VM'

Xx M M

X– M+ X– M+

M+ X– M+ X– M+ X– M+ X– M+

M M Xx M M Xx Mi Xx M M Xx M M

M+ X– M+ X–

M+ X– M+ X–

M M Xx M M Xx

X– M+ X– M+

X– Mo X– M+

Xx MM' Xx MM

M+ X– M+ X–

M+ X– M+ X–

M M Xx M M Xx

X– M+ X– M+

X– M+ Xo M+

Xx M M Xx M M

|M|' M

e'

h

FIGURE 8.2 Perfect (let) and defective crystal situations for the compound M+X−. A speciic example may be Ag+Cl−. Top row: ionic defects. Bottom row: electronic defects. First and second columns: structure elements in absolute notation. h ird column: structure elements in relative notation. Fourth column: building elements.

8-3

Nanoionics Emax E΄

Excited states

Problem

Level distr.

δZ/δE

— N

Parabolic

m3/2

Delta

1

Gaussian

σ2

Emin Eon, deloc. Ion, crystal

μ = E΄+ kT

(–)

Ion, amorphous

Ground states

δG΄= E΄δN΄– kT ln

(–)

δZ΄ δN΄

Emax

N=

δN΄/δZ΄

Emin

δN΄ δZ΄

μ – Emin — δZ΄ dE΄~ – N exp δE΄ kT

— μ = Emin + kT ln(N/N )

1 – δN΄/δZ΄

FIGURE 8.3 Whenever the gap between ground states and excited states is large, a Boltzmann distribution results. Details on the density of states enter the constant term (also the concentration measure). Eon stands for electron. If the reader is interested in more details, they are referred to Maier (2005a) and Kirchheim (1988).

Local partial free energy

Interstitital ionic level ~ μ °i Regular ionic level

~ μ M+

0 Valence band

~° –μ p

μM

~ μ e– Conduction band

(a)

~° –μ v

Rule of homogeneous doping

~ μ °n

k

zkδck zδC

0

+

v~ (kn ) ⎞ † (bnbn + b−† nb−n ) 2πℏ ⎟⎠

cLTL =

~ v (kn ) † † ⎫ ℏπ ⎡ v N N 2 + v JJ 2 ⎤⎦ (bnb−n + b−nbn ) ⎬ + 2πℏ ⎭ 2L ⎣

≡ H B + H N ,J ,

(10.37)

where N ≡ N + + N − is the total particle number operator above the Dirac sea, J ≡ N + − N − the “current operator,” and the velocities are given by vN = vF + v∼ (0)/πħ and v J = vF. Here, v N determines the energy change for adding particles without generating bosons while v J enters the energy change when the diference in the number of right and let movers is changed. As the particle number operators N α commute with the boson operators bm (bm† ) , the two terms HB and H N ,J in the Hamiltonian commute and can be treated separately. Because of translational invariance, the two-body interaction only couples the modes described by bn† and b−n. he modes can be decoupled by the Bogoliubov transformation α†n = cosh ⎡⎣θ(kn )⎤⎦ bn† − sinh ⎡⎣θ(kn )⎤⎦ b−n and its inverse bn† = cosh ⎡⎣θ(kn )⎤⎦ α†n + sinh ⎡⎣θ(kn )⎤⎦ α −n .

(10.38)

he Hamiltonian HB then takes the form [10,15,25] HB =

∑ ℏω α α n

† n

n

+ const.,

(10.39)

n ≠0

where the ωn = vF | kn | 1 + vɶ(kn ) / πℏvF follow from 2 × 2 eigenvalue problems corresponding to the condition [H B , α†n ] = ℏωnα†n . he parameter θ(kn) in the Bogoliubov transformation is given by [10] e 2 θ( kn ) =

πℏvF πℏvF + vɶ(kn )

(10.40)

For small |kn|, for smooth potentials v∼(k) again a linear dispersion is obtained: ωn ≈ vc | kn |,

(10.41)

with the charge velocity vc = v Nv J , which is larger than v F for v∼ (0) > 0. he groundstate |E0(N+, N−)〉 of the TL model is annihilated by the αn replacing Equation 10.19 and the excited states are analogous to Equation 10.20 with the bn† replaced by α†n . For i xed particle numbers N+ and N−, the excitation energies of the interacting Fermi system are given by ℏω jn j with integer j occupation numbers 0 ≤ nj < ∞. For small enough excitation energies, the only diference of the excitation spectrum with respect to the noninteracting case is the replacement v F ↔ vc and the low-temperature speciic heat per unit length is given by

∑

π ⎛ kBT ⎞ . kB 3 ⎜⎝ ℏvc ⎟⎠

(10.42)

Concerning the low-temperature thermodynamics, the situation is similar to the one in Fermi liquid theory. he results are qualitatively as in the noninteracting case but with efective parameters. For properties related to correlation functions, the scenario is diferent. he “stifness constant” K = v J/v N plays a central role which also shows up in the kn → 0 limit of Equation 10.40. Before addressing this issue in Section 10.4, the inclusion of spin is presented. Electrons are spin one-half particles and for their description it is necessary to include the spin degree of freedom in the model. For a i xed quantization axis, the two spin states are denoted by σ = ↑, ↓. he fermionic creation (annihilation) operators carry an additional spin label as well as the ˆρn, ±,σ and the boson operators bn,σ, which in a straightforward way generalize Equation 10.8. It is useful to switch to new boson operators bn,a with a = c, s bn,c ≡

1 (bn, ↑ + bn, ↓ ) 2

bn,s ≡

1 (bn, ↑ − bn, ↓ ), 2

(10.43)

which obey ⎡⎣ba ,n , ba′,n′ ⎤⎦ = 0 and ba ,n , ba†′ ,n ′ = δ aa ′ δ nn ′ 1ˆ . he kinetic energy can be expressed in terms of the “charge” (c) and “spin” (s) boson operators using bn†, ↑bn, ↑ + bn†↓bn ↓ = bn†,cbn,c + bn†, sbn, s . If one deines the interaction matrix elements v∼c(q) ≡ 2v∼(q), and v s (q) = 0, N ± , c ≡ ( N ± ,↑ + N ± ,↓ )/ 2 and N ±,s as the correspond(1/2) ing diference, one can write the TL-Hamiltonian H TL for spin one-half fermions as (1/2) H TL = H TL,c + H TL,s ,

(10.44)

where the HTL,a are of the form Equation 10.37 but the interaction matrix elements have the additional label a. he two terms on the right-hand side of Equation 10.44 commute, i.e., the “charge” and “spin” excitations are completely independent. his is usually called “spin-charge separation.” he diagonalization of the two separate parts proceeds exactly as before and the low-energy excitations are “massless bosons” ωn,a ≈ va|kn| with the charge velocity vc = (v Jcv Nc)1/2 and the spin velocity vs = (v Jsv Ns)1/2 = v F. he corresponding two stif ness constants are given by Kc = (v Jc/v Nc)1/2 and Ks = 1. If the coupling constants in Equation 10.37 in front of the b†b and the b†b† terms are diferent, the spin velocity vs difers from v F. If in addition the interaction is not spin rotationally invariant, Ks difers from 1 [7]. he low-temperature thermodynamic properties of the TL model including spin can be expressed in terms of the four quantities vc, Kc, vs, Ks. Because of spin-charge separation, the low-temperature speciic heat has two additive contributions of the same form as in the spinless case. If one denotes, as usual, the proportionality factor in the linear T-term by γ, one obtains

10-7

One-Dimensional Quantum Liquids

γ 1 ⎛ vF vF ⎞ = + , γ 0 2 ⎜⎝ vc vs ⎟⎠

(10.45)

where γ0 is the value in the noninteracting limit. In the zero temperature, spin susceptibility χ s and compressibility κ also the stif ness constants enter. For the ratios to the noninteracting case, one obtains v v χs = F = Ks F , vs χs,0 v Ns

v v κ = F = Kc F . vc κ 0 v Nc

(10.46)

A simple manifestation of spin-charge separation occurs in the time evolution of a localized deviation of, for example, the spin-up density from its average value δ 〈 ρ ↑(x, 0)〉 = F(x). If the deviation involves the right movers only, the initial (charge) current density is given by 〈 jc(x, 0)〉 = vc F(x). As the Fourier components of the operator for the density are proportional to the boson operators (see Equation 10.35), the time evolution of the density can easily be calculated. If F(x) is sufficiently smooth, the initial deviation is split into four parts which move with velocities ±vc and ±vs without changing the initial shape. Using the simple time evolution αn,a (t ) = α n,ae −iωn,at ≈ α n,ae −iva |kn |t for a = c, s one obtains for t > 0 δ ρ↑ (x , t ) =

∑ ⎡⎢⎣ a

ck⃗|F〉 of the noninteracting system are adiabatically connected to “quasi-hole” states of the interacting system, when the interaction is turned on. Using perturbation theory to all orders he showed that the lifetime of states ck⃗|E0(N)〉 goes to ininity when the momentum approaches the Fermi surface. If the “quasi-hole-weight” ZF is deined for the TL model as ZF ≡ | 〈 E0 (N + − 1, N − ) | ckF | E0 (N + , N − )〉 |2 ,

one has ZF = 1 for noninteracting fermions. If Fermi liquid theory would be valid, the quasi-hole weight ZF would go to a constant 0 < ZF < 1 in the limit L → ∞. he exact calculation of ZF for the TL model shows that the Fermi liquid theory expectation does not hold. his can be done using the bosonization of the ield operator presented in Section 10.2. he only property of the groundstate used is αn|E0(N+, N−)〉 = 0. One expresses the original boson operators bn and bn† in Equation 10.26 by the αn and α†n and brings the annihilation operators αn to the right, i.e., performs the bosonic normal ordering with respect to the new boson operators. his is achieved with help of the Baker1 − [ A, B]

Hausdorf relation e A + B = e Ae Be 2 which holds if the operators A and B commute with [A,B]. his yields for the physical ɶ ± (2πx /L)/ L for a system of inite ield operators ψ ± (x ) = ψ length L with periodic boundary conditions [10]

1 + Ka 1 − Ka ⎤ F ( x − v at ) + F ( x + v at ) ⎥ . 4 4 ⎦

ψ ± (x ) =

(10.47) For the spin rotational invariant case Ks = 1, there is no contribution which moves to the let with the spin velocity. Two of the three contributions move to the right with the diferent velocities vc and vs. his is a manifestation of spin-charge separation. In the spinless model, the sum in Equation 10.47 is absent and the 4 in the denominators are replaced by 2. Obviously, spincharge separation cannot occur and the initial deviation is split into two contributions, with the “fraction” (1 − K)/2 moving to the let. his is sometimes called “charge fractionalization.” he following comment should be made: Spin-charge separation is oten described as the fact that when an electron is injected into the system its spin and charge move independently with diferent velocities. his is very misleading as it is a collective efect of the total system that produces expectation values like in Equation 10.47. A similar argument holds for “charge fractionalization.”

10.4 Non-Fermi Liquid Properties In order to elucidate the non-Fermi liquid character of the TL model, it is useful to irst study the dynamics of states ck(†)n | E0 (N )〉 with an additional particle (hole) for the spinless model. Only in the noninteracting limit these states are eigenstates of the Hamiltonian and therefore have an ininite lifetime. In the (three-dimensional) Fermi liquid theory the quasi-particle(hole) concept plays a central role. Landau assumed that hole states

(10.48)

A(L) ˆ ⎛ 2πx ⎞ iχ†± ( x ) iχ± ( x ) O± ⎜ e ⎟e L ⎝ L ⎠

(10.49)

with iχ ± ( x ) =

Θ(± m) cosh[θ(kn )]e ikm x α m − sinh[θ(kn )]e −ikm x α −m , | | m m≠0

(

∑

⎛ sinh2[θ(kn )]⎞ A(L) = exp ⎜ − ⎟. n ⎝ n>0 ⎠

∑

)

(10.50)

where Θ(x) is the unit step function. his is a very useful formula for the calculation of properties like the quasihole weight, the occupancies or spectral functions of one-dimensional interacting fermions. he quasihole weight is given by ZF = |A(L)|2 as the exponential factors involving the boson operators can be replaced by unity as in Equation 10.29. he L-dependence of A(L) follows from

∑

nc

1 / n → log nc + γ , where γ is Euler’s constant.

n =1

he logarithmic divergence with nc = kc L/(2π) in the exponent is converted to a power law dependence for A(L) itself using e a log x = xa. herefore, in the large L limit α

⎛ 1 ⎞ (K − 1)2 ZF ~ ⎜ , α = 2sinh 2 ⎡⎣θ(0)⎤⎦ = , ⎟ ⎝ kc L ⎠ 2K

(10.51)

where α is called the anomalous dimension, as α also determines the anomalous slow spatial decay of the one-particle Green’s

10-8

Handbook of Nanophysics: Principles and Methods

function. he attempt to calculate ZF by perturbation theory in the two-body interaction strength v∼ leads to logarithmically diverging terms which are summed in the exact solution presented above. To summarize, in contrast to Fermi liquid theory, the quasihole weight ZF vanishes in a power law fashion for L → ∞, if v∼ (0) is diferent from zero. he appearance of power laws in the TL model was irst realized by Luttinger [14]. He found that the average occupation nk , + ≡ E0 (N ) | ck†ck | E0 (N ) in the interacting ground state for k ≈ kF behaves as α

〈nk , + 〉 −

1 k − kF ~ sign(kF − k) 2 kc

(10.52)

for 0 < α < 1. his is shown in Figure 10.3 in comparison to Fermi liquid theory. he full line was calculated assuming sinh 2 ⎡⎣θ(k)⎤⎦ = 0.3e

−2 k / kc

, while the dashed curve corresponds to

sinh ⎡⎣θ(k)⎤⎦ = 0.6 (| k | /kc )e −2|k|/ kc . For α > 1 the leading deviation of 〈nk,+ 〉 − 1/2 is linear in k − kF. At inite temperatures T the k-derivative of 〈nk,+ 〉 for 0 < α < 1 no longer diverges at k F but is proportional to T α−1. he vanishing of the quasihole (or quasiparticle) weight ZF is the simplest hallmark of LL physics. To reach a deeper understanding, the momentum resolved one-particle spectral functions should be studied [13,16,26]. hese spectral functions, which are relevant for the description of angular-resolved photoemission, are just the spectral resolutions of the hole states ck,σ|E 0(N)〉 discussed earlier: 2

ρ (k, ω) relevant for inverse photoemission involves a similar spectral resolution of ck†,σ | E0 (N )〉 and the total spectral function ρσ(k, ω) is the sum of ρ< and ρ>. For k → kF, the spinless model and the model including spin show qualitatively the same behavior. he absence of a sharp quasiparticle peak is manifest from ρ+ (kF , ω) ~ α | ω |α −1 e −|ω|/ kc vc , where ω is the deviation from the chemical potential. Instead of a delta function at the chemical potential a weaker power law divergence is present for 0 < α < 1. For k ≠ kF, the k-resolved spectral functions for the spinless model and the model with spin-1/2 difer qualitatively. he delta peaks of the noninteracting model are broadened into one power law threshold in the model without spin and two power law singularities (see Figure 10.4) in the model including spin if the interaction is not too large [16,26]. he “peaks” disperse linearly with k − kF. For the momentum integrated spectral functions, relevant for angular integrated photoemission, ρ±,σ(ω) ∼ |ω|α as in the spinless model is obtained. It is also straightforward to calculate various response functions for the TL model [13]. he static ±2kF + Q density response for the spinless model diverges for repulsive interaction proportional to |Q|2(K−1) which has to be contrasted with the logarithmic singularity in the noninteracting case. In the model including spin, the exponent 2K − 2 is replaced by Kc + Ks − 2. Results for other response functions can be found in the given literature [4,7,8,21]. 15

nk,+

ρ+,σ (kF − kc/10,ω) kcvc

1

0.5

0 −2

−1

0

1

2

(k − kF)/kc

FIGURE 10.3 he full line shows the average occupation 〈nk,+ 〉 for a TL model with α = 0.6. he dashed line shows the expectation from Fermi liquid theory, where the discontinuity at kF is given by ZF. his can also be realized in a TL model with v∼ (0) = 0. he details of the interaction are speciied in the text. (From Schönhammer, K., Strong Interactions in Low Dimensions, eds. D. Baeriswyl and L. Degiorgi, Kluwer Academic Publishers, Dordrecht, the Netherlands. With permission.)

10

5

0 −0.4

−0.2

0

0.2

0.4

ω/kcvF

FIGURE 10.4 Spectral function ρσ (kF + kɶ, ω) = ρσ< (kF + kɶ, ω) + ∼ ρ 1, i.e., an attracˆ is irrelevant. As the strength of the imputive interaction, V B rity increases with the system size for repulsive interaction, one enters the regime of two weakly coupled semi-ini nite Luttinger liquids. Near the boundary of a semi-ininite LL at zero temperature, the low-energy local spectral function behaves as α ρ(ω) ~ ω B , with αB = 1/K − 1, the “boundary exponent,” and at inite temperatures ρ(0) ~ T αB . A simple “golden rule” calculation using the weak hopping between the semi-ininite LLs as the perturbation leads to a linear conductance which vanishes in the low-temperature limit like Glin ~ T 2αB . his is very diferent from a noninteracting system, where a weak impurity only leads to a weak suppression of the ideal conductance. he unusual inluence of an arbitrarily weak impurity in the LL is related to the power law divergence of the 2kF-density response mentioned above. Tomonaga was well aware of the limitations of his approach for more generic two-body interactions (“In the case of force of too short range this method fails” [25]). For a short-range interaction kc >> k F, low-energy scattering processes with momentum transfer ≈ ±2kF are possible and have to be included in the theoretical description of the low-energy physics. he more general model including spin and terms changing right movers into let movers and vice versa is usually called the “g-ology model.” It is no longer exactly solvable but spin-charge separation still holds. An important step toward the general Luttinger liquid concept came from the renormalization group (RG) study of this model [24]. It was shown that for repulsive interactions the renormalized interactions low toward a i xed point Hamiltonian of the TL-type unless in lattice models for commensurate electron i llings strong enough interactions (for the half-i lled Hubbard model this happens for arbitrarily small on-site Coulomb interaction U) destroy the metallic state by opening a Mott-Hubbard gap. hese RG results as well as insight from models that allow an exact solution by the Bethe ansatz led Haldane [9,10] to propose the concept of Luttinger liquids as a replacement of Fermi liquid theory in one dimension. As results for integrable models, which can be solved exactly by the Bethe ansatz played a central role in the emergence of the

general “Luttinger liquid” concept, it is appropriate to shortly present results for the two most important lattice models of this type, the model of spinless fermions with nearest neighbor interaction and the 1d-Hubbard model. he one-dimensional single band lattice model of spinless fermions with nearest neighbor hopping matrix element t(>0), and nearest neighbor interaction U (oten called V in the literature) is given by H = −t

∑(c c

† j j +1

+ H .c.) + U

j

∑nˆ nˆ

j j +1

≡ Tˆ + Uˆ ,

(10.54)

j

where j denotes the sites nˆ j = c †j c j are the local occupation number operators In the noninteracting limit U = 0 for lattice constant a = 1, the well known dispersion ϵk = −2t cos k is obtained. he interacting model (U ≠ 0) is here only discussed in half-i lled band case k F = π/2 with v F = 2t. In contrast to the (continuum) Tomonaga model, Umklapp terms appear. hey are irrelevant at the noninteracting (U = 0) i xed point [23]. herefore, the system is a Luttinger liquid for small enough values of |U|. he large U limit of the model is easy to understand: For U >> t, charge density wave (CDW) order develops in which only every other site is occupied, thereby avoiding the “Coulomb penalty” U. For large but negative U, the fermions want to be as close as possible and phase separation occurs. For the quantitative analysis it is useful that the model in Equation 10.54 can be exactly mapped to a S = 1/2 Heisenberg chain with uniaxially anisotropic nearest neighbor exchange (“XXZ” model) in a magnetic ield by use of the Jordan-Wigner transformation [7,8]. he point U ≡ Uc = 2t corresponds to the isotropic Heisenberg model. For U > 2t, the Ising term dominates and the ground state is a well-dei ned doublet separated by a gap from the continuum and long-range antiferromagnetic order exists. For −2t < U ≤ 2t there is no long-range magnetic order and the spin-excitation spectrum is a gapless continuum. he mapping to the XXZ model correctly suggests that the spinless fermion model Equation 10.54 in the half-i lled band case is a Luttinger liquid for |U| < 2t. Exact analytical results for the Luttinger liquid parameters for the halfi lled model can be obtained from the Bethe Ansatz solution [9]. For the stif ness constant, for example, K = π/[2 arccos (−U/2t)] is obtained. here exists a monograph [5] on the 1d-Hubbard model and an excellent earlier discussion of its LL behavior [22]. As the model includes spin, the on-site interaction between electrons of opposite spins is not forbidden by the Pauli principle. his is taken as the only interaction in the model. he 1d Hubbard Hamiltonian reads H = −t

∑(c j, σ

† j , σ j +1, σ

c

+ H .c.) + U

∑nˆ

nˆ .

j,↑ j,↓

(10.55)

j

An important diference to the spinless model Equation 10.54 shows up in the half-illed band case, which is metallic for U = 0.

10-10

For U >> t, the “Coulomb penalty” is avoided when each site is singly occupied. hen, only the spin degrees of freedom matter. In this limit the Hubbard model can be mapped to a spin-1/2 Heisenberg antiferromagnet with an exchange coupling J = 4t2/U. In the charge sector there is a large gap Δc ∼ U while the spin excitations are gapless. he 1d Hubbard model can also be solved exactly using the Bethe ansatz [5] and properties like the charge gap or the ground state energy can be obtained by solving Lieb and Wu’s integral equation. In contrast to the spinless model, the charge gap in the Hubbard model is i nite for all U > 0. While for U >> t it is asymptotically given by U it is exponentially small Δ c ≈ (8t/π) U/t exp(−2πt /U ) for 0 < U Tw, the ilm thickness diverges close to the liquid–vapor coexistence line as h(Δp → 0, T) ∼ |Δp|−1/3. For many actual liquid–substrate combinations, the wetting temperature Tw happens to be lower than the triple point temperature Tt, so that the substrate surface is always wet. (Known * Water is not a simple liquid in the sense that its liquid–solid coexistence line has a negative slope.

Tt

Gas

Tw

Tpw Tc

T

FIGURE 11.8 Schematic phase diagram of a simple liquid with phase boundaries (solid lines) separating the gas, liquid, and solid phases. (Tt , p t) and (Tc, p c) are the triple point and the critical point, respectively. For substrates exhibiting an efective interface potential as shown in Figure 11.6, the substrate is covered by a macroscopically thick wetting i lm for T > Tw and pressures just below the liquid–vapor coexistence line (thick part of the coexistence line). Upon increasing the pressure at the prewetting line Ppw(T) (dotted line) the wetting i lm thickness jumps from a microscopic to a macroscopic but i nite value. he prewetting line meets the liquid–vapor coexistence line tangentially [92]. Assuming a positive latent heat associated with the prewetting transition, the slope of the prewetting line is positive.

exceptions are 4He on Cs [93–96] or Rb [97] for which bona ide irst-order wetting transitions have been identiied.) In addition, there are also substrates that exhibit a second-order wetting transition. So far the only systems for which second-order wetting transitions have been found involve a liquid substrate [98–101]. herefore we will not discuss this type of wetting transitions in this chapter.

11.4.2 Moving Three-Phase Contact Lines In the case of a moving drop or a spreading ilm, the three-phase contact line between the liquid, the substrate, and the gas phase has to move. his is a longstanding problem in hydrodynamics: the stress and the viscous dissipation in the wedge-shaped volume next to the contact line diverges, such that on that basis, the contact line should not be able to move [102]. However, everyday experience tells that it does. Phenomenologically one oten observes the following relation between the actual contact angle θ, the equilibrium contact angle θeq, and the contact line velocity w [103,104]: w∝

σ π θ(θ2 − θ2eq ) ≈ R3 (t )θ(t ). η 4

(11.33)

he stress divergence is a defect of the macroscopic description: hydrodynamics breaks down at the molecular scale, and slip as well as the existence of a precursor ilm regularize the stress divergence at the contact line. In addition, molecular kinetics is another important source of dissipation in the moving contact line: molecules “jumping” from the liquid onto the substrate just ahead of the contact line dissipate the energy that they gain in the process

11-12

Handbook of Nanophysics: Principles and Methods

(see Ref. [105]). Although the concept of a dynamic contact angle is clearly a macroscopic one and mostly phenomenological, the problem of the moving contact line is a nanoluidic problem. In coating processes, moving contact lines are of great technological importance. However, most of the knowledge of the contact line dynamics has been gained by studying the spreading of droplets [18,106]. Although signiicant progress has been made in this ield, there is not yet a complete understanding of the dynamics of three-phase contact lines, in particular not on actual, i.e., inhomogeneous (structured, rough, or dirty) substrates. Since a comprehensive treatment of the subject is beyond the scope of this presentation, in the following we focus on results obtained for simple liquids on ideal homogeneous substrates. In a spreading experiment, a droplet (usually of macroscopic size but small enough such that gravity does not play a role) is deposited on a surface with an initial contact angle, which is larger than θeq. If the spreading process is not too rapid, in good approximation, the droplet keeps the shape of a spherical cap throughout the whole spreading process such that the timedependent contact angle θ(t) is related to the droplet base radius R(t) and the i xed droplet volume V due to geometry: V=

πR3 (t ) (1 − cos θ(t ))2 (2 + cos θ(t )) ≈ π R3 (t )θ(t ), 4 sin3 θ(t )

(11.34)

where the latter relation holds for θ(t) 0. he generic interface potential for this case, as shown in Figure 11.4, has two inlection points. Between these two inlection points, the curvature of ω(h) is negative and, as we shall discuss in Section 11.4.3.2, the ilm is linearly unstable: ininitesimal perturbations (e.g., generated by thermal luctuations) grow exponentially and spinodal dewetting comes into play. Only very thin i lms are stable in the sense that they represent a thermodynamic equilibrium state. hick ilms are metastable: a free energy barrier has to be overcome in order to form the nucleus of a growing hole in the ilm [116,117]. In general, this barrier is larger for thicker ilms. Depending on the source of the free energy for overcoming this barrier—thermal luctuations or heterogeneities in the substrate (e.g., dirt or roughness) or in the ilm (e.g., inclusions or bubbles)—homogeneous or heterogeneous nucleation, respectively, of holes is possible. Experimentally it is extremely diicult to observe pure homogeneous nucleation because either the time scale for the formation of holes due to thermal luctuations is too large or the ilms are so thin that they are extremely sensitive with respect to heterogeneities. While spinodal dewetting and nucleation can be distinguished by the resulting dewetting patterns [118], it is diicult do distinguish homogeneous and heterogeneous nucleation: in both cases, the positions of the emerging holes are random and uncorrelated. Sometimes nucleation sites can be identiied by repeating a dewetting experiment on the same substrate: if a hole appears repeatedly on the same spot one can safely assume that there is a defect underneath. However, to determine whether the hole really appears at the same spot is an experimental challenge.

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Nanoluidics of Thin Liquid Films

11.4.3.2 Spinodal Dewetting

B = 100

η

⎛ ∂2ω (h0 ) ⎞ ∂δh = M (h0 )∇2 ⎜ δh − σ∇2δh⎟ . 2 ∂t ⎝ ∂h ⎠

(11.35)

∼ Solutions of the form δh(x, y, t) = δh(k x , k y, t) exp (−ik x x − ik y y) ∼ ∼ with δh(k x , ky, t) = δh(k x , ky, 0) exp (Ω(k)t) are obtained. ∼ δh(k x , ky, 0) is the Fourier transform of the initial roughness. The dispersion relation, i.e., the growth rate of the perturbation, is given by Ω(k) = −

2 ⎞ M (h0 ) ⎛ ∂ ω (h0 ) 2 k + σk 4 ⎟ , ⎜ 2 η ⎝ ∂h ⎠

(11.36)

with k 2 = kx2 + k 2y . he dispersion relation is independent of the slip regime, except for the strong-slip regime. For ∂2h ω (h0 ) < 0 , there is a band of unstable (i.e., exponentially growing) modes with Ω(k) > 0 between k = 0 and k = 2 Q. Q = ∂2h ω (h0 ) /σ is the position of the maximum of Ω(k). In Figure 11.9, Ω(k) is shown in for spinodally unstable systems as well as for stable or metastable i lms with ∂ 2hω (h0 ) > 0 . he dependence of Q on ω(h 0) has been exploited to experimentally determine the interface potential [119,120]. he power spectrum S(k,t) of the luctuations in the linear regime is given by ∼ S(k, t ) = | δh (kx , k y , t ) |2 = S0 (k)e 2 Ω(k )t ,

(11.37)

with the power spectrum S 0(k) of the initial roughness. For suiciently smooth initial power spectra (i.e., without a pronounced peak) the power spectrum S(k, t) has its maximum at the maximum of Ω(k), i.e., at k = Q. he position Q of the maximum of S(k, t) renders directly the curvature ∂2h ω (h0 ) = (σ Q)2. Measuring Q for many ilm thicknesses allows the determination of ω(h) by numerical integration. he integration constants are determined by the position and the depth of the minimum of ω(h), which have to be determined independently by measuring the wetting i lm thickness between the droplets ater the dewetting process is inished and by measuring the equilibrium contact angle of the droplets θeq, respectively (see Equation 11.30).

Ω/Ωmax

Spinodal dewetting has been studied mostly in the no-slip regime, but in this respect the behavior of ilms in the no-slip, weak-slip, and intermediate-slip regime is rather similar; only the time scales difer. In order to observe spinodal dewetting in a wellcontrolled experiment, the ilm in an immobilized state should be prepared such that the starting time of the dewetting process can be deined. his can be achieved, e.g., by spincoating a polymer in a volatile solvent, which rapidly evaporates at a temperature below the glass transition temperature of the polymer. he resulting i lms are almost perfectly lat with some small initial roughness. In order to start the dewetting process, the system is heated above the glass transition temperature. Linearizing the corresponding thin i lm equation (11.25) around the initial lat i lm with thickness h0 yields for the perturbation δh(x, y, t):

B = 10

B=1

B = 0 (unstable)

1 0.5 0 –0.5 –1

B = 0 (stable) 0

0.5

k/Q

1

√2

FIGURE 11.9 Dispersion relations Ω(k) (normalized by their maximum value Ω max) as a function of k/Q for linearly unstable films (∂2h ω (h0 ) < 0 , full lines); k = Q = ∂2h ω(h0 ) /σ is the position of the maximum of Ω(k) as valid in the no-slip, weak-slip, and intermediate-slip regime (Equation 11.36). In these latter cases, Ω(k)/Ωmax is given by the curve marked by B = 0 (unstable); B = 4bh 0 Q 2 . In the strong slip regime Equation 11.36 is replaced by Equation 11.41 leading to a decrease of the position of the maximum upon increasing B, shown for B = 1, 10, and 100. All films have the same band 0 < k < 2Q of unstable modes, independently of the slip length. The dashed line shows the dispersion relation of a stable film, i.e., ∼ ∂2h ω (h0 ) > 0 . In this case, Ω is normalized by Ω max which is obtained by calculating Ω(Q) via Equation 11.36 but with ∂2h ω (h0 ) replaced by −∂2h ω(h0 ) .

he characteristics of the power spectrum S(k, t) difer from the deterministic spectrum in Equation 11.37 if thermal noise is relevant. In this case, by linearizing Equation 11.27 one obtains S(k, t ) = S0 (k)e 2Ω(k )t +

kBTM (h0 ) k 2 (e 2Ω(k )t − 1). η Ω(k)

(11.38)

he second, temperature-dependent term is generated by the thermal luctuations and, in contrast to the deterministic spectrum in Equation 11.37, is nonzero for t > 0 even for an initially perfectly lat ilm, i.e., for S(k, 0) = 0. If S(k, 0) depends on k only weakly, as a function of time the power spectrum develops a peak at km(t) > Q, which approaches Q from above in the limit t → ∞ [43]. A shiting peak in a power spectrum is oten associated with the importance of nonlinearities. Here, the reason for this noise-induced coarse graining is that initially thermal luctuations generate mostly luctuations with short wavelengths and only later the instability associated with longer wavelengths corresponding to the maximum of Ω(k) sets in. Recently, it has been possible to demonstrate the relevance of thermal luctuations for spinodal dewetting of thin polymer ilms by analyzing the variance of the ilm thickness [16], kc

〈δh2 〉 =

k

∫ 2π S(k,t )dk,

(11.39)

0

and the variance of the slope, kc

〈(∇h)2 〉 =

∫ 0

k3 S(k, t )dk, 2π

(11.40)

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Handbook of Nanophysics: Principles and Methods

with the microscopic cutof kc, which is induced by the molecular scale. However, numerical studies have also demonstrated that later stages of dewetting, when holes in the i lm start to coalesce, are hardly inluenced by thermal luctuations [45]. Beyond the linear regime, the thin ilm equation (11.25) can be solved only numerically. It is particularly diicult to cope numerically with the vanishing mobility factor M(h → 0) = 0. With schemes that preserve the non-negativity of h(x, y, t) [121,122], it has been possible to demonstrate [54] that spinodal dewetting patterns can be modeled quantitatively by Equation 11.25. 11.4.3.3 Dewetting on Slippery Substrates As already mentioned above, the dispersion relation of a thin liquid i lm in the strong slip regime has a form diferent from Equation 11.36. Linearizing Equation 11.26 around a lat i lm with thickness h 0 yields [123]

Ω(k) = −

bh02k 2 (∂h2 ω (h0 ) + σk 2) η(1 + 4bh0k 2 )

(11.41)

he strong-slip dispersion relation is also positive for 0 < k < 2 Q, but the position km of the maximum decreases upon increasing the dimensionless slip length B = 4bh0Q2 (see Figure 11.9). he power spectrum of a i lm in the strong slip regime is also given by Equation 11.37, but with the dispersion relation given by Equation 11.41, and it also develops a peak at the position of the maximum of Ω(k). However, since this position depends on the slip length and the i lm thickness, the efective interface potential for i lms with strong slip cannot be determined from the power spectrum (as described above) without knowledge of the substrate rheology, i.e., the slip length [42]. Slip inluences not only the luctuation spectrum of spinodally dewetting i lms but also the dynamics and the structure of dewetting patterns of thicker, metastable i lms. During dewetting of a metastable i lm, initially separated holes, which grow in size and time, are observed. he liquid from inside the holes accumulates in a rim around the hole, which, as a consequence, grows in time. h is growth rate depends on the dissipation mechanism [124]: on substrates without slip, neither the driving force for the motion of the rim nor the dissipation (which only occurs within the contact line) depends on the hole size, such that the hole radius R grows linearly in time, i.e., R ∼ t. In the strong-slip (or plug-low) regime, however, the dissipation happens in the liquid–substrate interface, which means that the overall dissipation rate grows with the width of the rim. In this regime, theoretically R ∼ t2/3 is obtained. A combined model, which includes both the dissipation in the contact line as well as the dissipation in the liquid–substrate interface, yields an implicit relation between R and t, which quantitatively describes the dewetting rate of polymer i lms with large slip [125]. However, the rim around the holes is not stable and the type of instabilities observed depends on the slip length. On substrates with weak slip, a depression is observed between the rim and

the resting i lm, which can act as a nucleation site for satellite holes [126,127]. On substrates with strong slip, this depression is absent [128–130] and therefore it cannot serve as a nucleation site for secondary holes. Since this depression of the i lm thickness had been observed predominantly in Newtonian luids and a monotonic decay toward the resting ilm in viscoelastic i lms, there were speculations that viscoelasticity would prevent the formation of the depression [131]. However, recently it has been shown that this is not the case [46]. he reason for this misinterpretation of the experimental indings was that experiments were compared that involved polymers with short (Newtonian) and long (viscoelastic) chain lengths, respectively. However, the slip length of polymers with long chain lengths tends to be much larger than that of polymers of the same type but with short chain lengths. Stationary liquid ridges are unstable with respect to pearling [90,132]. This surface tension driven instability (related to the Plateau-Rayleigh instability which, inter alia, causes a falling stream of fluid to break up into drops) also affects the dewetting rim around holes [133,134]. Recently, it has been proposed that hydrodynamic slip should not only increase the growth rate of the rim instability by orders of magnitude, but that in the presence of slip the initial modulations of the rim become asymmetric by developing protrusions toward the hole [135]. Figures 4 and 6 in Ref. [133] indeed show such asymmetric rim undulations; however, in this reference the slip length was not assessed.

11.5 Heterogeneous Substrates Most actual surfaces are heterogeneous. However, with microfluidic applications in mind, in the following we focus on structured substrates rather than random heterogeneities (such as roughness or dirt), although these have significant influence on the wetting properties [136,137] as well as on the dynamics of moving contact lines [138]. In general, we distinguish between topographic and chemical heterogeneities, i.e., between substrates of homogeneous chemical composition but with a nonflat surface and chemically heterogeneous substrates with a flat surface.

11.5.1 Topography Recently, topographically structured surfaces have attracted signiicant attention due to their ability to change the macroscopic contact angle of droplets signiicantly: depending on the wetting properties of the material forming a corresponding lat substrate, roughness, and in particular topographic textures can lead to so-called superhydrophobic or superhydrophilic states. While superhydrophilic substrates are completely wetted hydrophilic substrates, in the texture or grooves of the rough surface of superhydrophobic substrates pockets of gas or vapor are trapped, which efectively increase the macroscopic equilibrium contact angle. (Since the contact line on rough surfaces is not a circle and near the substrate the drop shape deviates from

11-15

Nanoluidics of Thin Liquid Films

a spherical cap, the contact angle has to be deined as explained in Section 11.4.1.1.) he topographical features of substrates can be generated by using advanced photolithographic techniques originally developed in the semiconductor industry. However, they are, in general, on the micron scale and we refer the reader to Refs. [139,140] for more information. For a long time, roughness was associated with an efective no-slip boundary condition [141]. However, it turns out that the vapor trapped between the solid and the liquid in the superhydrophobic state leads to signiicant slip [142–144]. Since the viscosity of gases is negligible as compared to the viscosity of most luids, the gas bubbles in the grooves of the substrate surface act as a lubricant and signiicantly reduce the friction of the luid. 11.5.1.1 Wetting of Wedges and Nanosculptured Surfaces Topographically structured surfaces exhibit wetting phenomena which are qualitatively diferent from the ones of lat substrates. One important aspect of this is, that the amount of adsorbed luid on a rough surface is signiicantly diferent (in most cases larger) from the amount on corresponding smooth surfaces [26,145,146] and depends on the characteristics of the roughness [147]. he simplest topographic structure, which shows a nontrivial wetting behavior, is a wedge that can be found at the bottom of a groove. If such a structure is in chemical equilibrium with a vapor, the wedge is i lled with liquid even at temperatures and pressures at which the lat surface of the same material is still nonwet. he i lling of the wedge is a thermodynamic phase transition, which can be understood in terms of a simple macroscopic picture [148]: he equilibrium contact angle is a function of temperature and pressure. he liquid–vapor interface is a section of a circle with a curvature given by the pressure. Calculating the i lling level of the groove follows the principles of geometry: the groove is i lled/empty if π/2 − θeq is larger/smaller than half the opening angle of the wedge. Taking into account long-ranged intermolecular interactions leads to a very rich phase diagram [149]. On the gas side of the bulk phase diagram, a preilling line is found, the crossing of which leads to a irst-order interfacial phase transition between a small and a large but inite i lling height. At bulk gas–liquid coexistence, this jump becomes macroscopically large forming a bona ide i lling transition at a temperature below the wetting transition temperature of the corresponding lat surface. he preilling line varies as function of the wedge opening angle and can even intersect the prewetting line. Generically, the order of the i lling transition is the same as that of the wetting transition. Decreasing undersaturation along an isotherm above the i lling transition temperature leads to a continuous complete i lling transition associated with interesting critical phenomena, which have attracted considerable theoretical [150] and experimental [151] attention. Monitoring adsorption on nanosculptured surfaces [152] demonstrates that the details of the shapes of the surface structures together with the long range of the underlying dispersion forces strongly inluences the macroscopic wetting properties of such surfaces [153,154].

Topographically structured surfaces do not only exhibit nontrivial wetting phenomena. Droplets of nonvolatile luids, e.g., at steps [155] or in grooves [156], undergo a number of morphological phase transitions as a function of luid volume and geometrical parameters. As an example, a small drop spreads along a surface step whereas a large one assumes a more compact shape [155]. he morphology also depends on the equilibrium contact angle on the corresponding lat surface: the compact shape is favored for large contact angles, while for θeq → 0 drops of any size spread along the step. θeq can be conveniently modiied by applying an electrical voltage (a phenomenon called electrowetting [157]) such that the morphologies can be switched electrically [158]. For a topical review of such phenomena, see Ref. [159]. However, up to now these phenomena have not been studied on the nanoscale. 11.5.1.2 Dynamics of Thin Films and Droplets he discussion of the moving contact line in Section 11.4.2 assumes a homogeneous substrate. If a moving contact line encounters a surface heterogeneity, such as, e.g., a receding contact line approaching a topographic step as illustrated in Figure 11.10, it can be pinned [11,140]: the local contact angle has to decrease considerably so that the contact line can overcome the obstacle. he same is true for an advancing contact angle approaching the step from above as well as for a steps with rounded edges. Within this macroscopic picture, the relevant parameter for the pinning is the slope of the steepest part of the step, which is π/2 for the example shown in Figure 11.10. A contact line that approaches a step from below will not be pinned. However, experimentally it has been shown that a step has to have a certain minimum height, which depends on the type of luid, in order to pin a receding contact line [160]. he mechanisms for this phenomenon is not yet fully understood, but the observation that for decreasing step height the disjoining pressure in the vicinity of the step, calculated according to Equation 11.11, smoothly converges to the disjoining pressure of a lat (barrier free) substrate suggests that

Liquid θeq θeq

Substrate

FIGURE 11.10 Macroscopic picture of a receding three-phase contact line (the direction of motion is indicated by the arrow) pinned at a topographic step. On the lat part of the substrate, the contact angle is given by the equilibrium contact angle θeq (or by the receding contact angle in the case of hysteresis). At the edge the contact angle is ill-deined. In order to overcome the step the equilibrium or receding contact angle on the vertical part of the step has to be reached.

11-16

the free energy barrier for the depinning of the contact line also vanishes continuously. his naturally explains why the step has to have a minimum height in order to efectively pin the contact line. he probability for the contact line to overcome this barrier by a thermal luctuation decreases very strongly with the barrier height. Nanodroplets in the vicinity of topographic steps behave qualitatively diferently from macroscopic drops. If a macroscopic drop resides completely on the terrace above or below the step and if the three-phase contact line of the drop does not touch the step, it does not interact with the step and therefore does not move. Nanodrops, however, do react on the presence of the step via the long-ranged part of the intermolecular interaction potentials. Since the equilibrium contact angle θeq is determined by the interplay of long- and short-ranged forces, the direction of motion of the nanodroplets cannot be inferred from the equilibrium contact angle but only from the sign of the leading large-distance term of the disjoining pressure, i.e., the Hamaker constant. As a consequence, the direction of motion of the nanodroplets does not depend on whether they start from the top or from the base of the step: they move in step-down direction for negative and in step-up direction for positive Hamaker constants [161]. At this point it is not clear whether the alignment of condensed droplets along terrace steps of vicinal surfaces as observed in Ref. [53] is due to the migration of nanodroplets toward the step or due to an instability related to the morphological phase transition of a liquid condensate growing at the base of a step [155]. Clearly the interplay of condensation dynamics, droplet migration, and morphological instabilities is a promising ield of research.

11.5.2 Chemically Inhomogeneous Substrates Macroscopically (i.e., on length scales large compared with the structures), chemically, and topographically inhomogeneous substrates behave rather similarly: although the three-phase contact lines of droplets are not circular, an efective macroscopic equilibrium contact angle can be deined and the contact lines tend to be pinned at any kind of heterogeneity [162]. Moreover, since many techniques to chemically pattern surfaces involve coatings or grated monolayers of large molecules such as polymers, chemical patterns are oten accompanied with topographic steps [163]. However, there are methods available, such as local oxidation nanolithography [164], which allow one to create chemical nanopatterns with topographically lat surfaces. Alternatively, endgroups of grated polymer brushes can be removed by ultraviolet light, which allows one to create patterns optically [165]. here are also coatings that change their wettability reversibly when illuminated by light [166] or when exposed to electrical ields [167]. By varying the density of coatings, surfaces with a chemical gradient leading to a position-dependent equilibrium contact angle θeq(x, y) can be realized. On such surfaces, droplets move toward regions with smaller contact angles [168–170]. he forces acting on the droplets can be strong enough to drive droplets uphill [171].

Handbook of Nanophysics: Principles and Methods

Chemical patterns have recently received signiicant attention due to their potential application as open microluidic devices in which liquids are not conined to closed pipes but to chemical channels, i.e., hydrophilic stripes embedded into hydrophobic surfaces [172–174]. In such systems, low cannot be generated by applying pressure to an inlet as in the case of a closed pipe. Several alternative means to drive low have been discussed, ranging from gravity and shear in a covering layer of luid [175] to substrates with dynamically switching wetting properties [176]. In contrast to what is possible for closed channel systems, manipulating the stresses at the liquid–vapor interface is a means to generate low in an open channel system [173]. In most systems, the surface tension coeicient σ decreases as a function of temperature, such that locally heating the substrate results in a lateral variation of the surface tension, which, in turn, leads to a tangential stress in the luid surface which generates low. his phenomenon is called Marangoni efect. 11.5.2.1 Wetting Phenomena on Chemically Structured Substrates While a liquid i lm on a homogeneous substrate, which is in thermodynamic equilibrium with its vapor, is always lat and droplets are unstable, the local thickness of wetting i lms on a chemically inhomogeneous substrate relects the heterogeneity. Straight chemical steps between homogeneous half planes of diferent wettability and straight chemical channels (i.e., stripes of a wettability diferent from the surrounding homogeneous substrate) have been studied extensively as paradigmatic examples. he thicknesses of the wetting i lm on the two sides of a chemical step depends on the chemical potential (i.e., the vapor pressure) and temperature and in general, they are diferent. herefore the chemical step results in a lateral variation of the wetting i lm thickness. In the case that the wetting temperature on one half of the substrate is higher than on the other half, one can ind temperatures at which a macroscopically thick liquid i lm on one half of the substrate crosses over into a microscopically thin wetting i lm on the other side. In this case, the thickness h(x) on the wet side as a function of the distance x from the chemical step follows the power law h(x )~ x [177]. In the case of a completely wetting chemical channel surrounded by a nonwet substrate, due to surface tension efects, the i lm thickness on the channel remains inite even for vanishing undersaturation [178,179]. If the efective interface potential ω(h) describing the channel has two minima at inite ilm thicknesses, the ilm thickness on the substrate surrounding the chemical channel can inluence the thickness on the chemical channel and its change can induce a transition of the ilm thickness on the channel from the thickness corresponding to one minimum of ω(h) to the thickness corresponding to the other minimum [180]. his transition is a quasi-irst-order morphological phase transition. While the ilm thickness of volatile luids on straight chemical channels is constant along the channel, one observes morphological phase transitions for nonvolatile luids. he control parameters are the equilibrium contact angle on the stripe as well as on the

Nanoluidics of Thin Liquid Films

surrounding substrate (which should be larger than θeq on the stripe in order to be able to conine liquids to the channel; both equilibrium contact angles depend on temperature), and V/W3 where V is the droplet volume and W the stripe width. For small volumes and small but inite contact angles on the channel the luid spreads in a cigar-shaped rivulet along the channel. Upon increasing the luid volume at equilibrium contact angles on the channel below θ(c) eq ≈ 39.2 , one observes a irst-order morphological phase transition to a state in which the luid contracts into a 3 bulge-like droplet. he values θeq = θ(c) eq and V/W ≈ 2.85 form the critical end point of a line of phase transitions. On substrates with a inite contact angle, this bulge spills onto the surrounding substrate [181,182]. On a completely wetting channel (θeq = 0), homogeneous rivulets can be observed only if the contact angle θ of the rivulet (which is pinned at the channel edge by the chemical step if θ is smaller than the equilibrium contact angle on the surrounding substrate) is smaller than a certain critical angle. Within the macroscopic capillary model, i.e., if only surface tensions are taken into account but not the efect of long-ranged intermolecular forces, this angle equals 90° [183]. If θ is larger the rivulet is linearly unstable and breaks up into a string of droplets. h is surface tension–driven instability is similar to the Plateau-Rayleigh instability of a homogeneous cylinder of liquid: the local pressure in the luid (determined by the Laplace pressure) decreases with the radius such that a part of the cylinder, which is only slightly thinner will inlate the rest. For the same reason, the smaller balloon inlates the thicker balloon if they are connected. In the case of the rivulet, the pressure in the luid increases for increasing i lling level, if θ < 90° but it decreases for larger θ. Indeed one can show that homogeneously illed channels are not unstable with respect to pearling if the pressure increases with the i lling level even if the efect of long-ranged intermolecular forces are taken into account in terms of the efective interface potential [184]. Although a homogeneously i lled straight chemical channel of macroscopic length can be linearly stable, it does not necessarily represent the state with the lowest free energy: collecting all the liquid into a single macroscopically large drop always reduces the surface area of the liquid vapor interface and, if the equilibrium contact angle on the channel is inite, also reduces the free energy. In this case, the diameter of the drop is large as compared to the channel width. If the equilibrium contact angle on the substrate surface surrounding the chemical channel is smaller than 180°, the shape of the drop resembles the hemispherical shape of a drop on a homogeneous surface with the same wetting properties, but with a small perturbation of the circular contact line at the positions where it crosses the channel. If the surrounding substrate is dry, i.e., if the equilibrium contact angle is 180°, the drop is basically spherical but still connected to the chemical channel with a narrow neck, which is extended along a portion of the channel. Morphological transitions have been observed experimentally as well as in simulations not only on straight channels [185,186] but also on rings [187,188]: In this case, the ratio of the ring diameter and the stripe width provides an additional control

11-17

parameter and one observes two transitions: At low volumes, the rivulet on the ring is cylindrically symmetric. But this coniguration undergoes a surface tension–driven symmetry breaking instability toward a single bulge at very large volumes, the luid assumes again a symmetric coniguration with a big drop spanning the whole ring including the nonwetting circle in its center. 11.5.2.2 Rivulets and Droplets on Chemical Channels he above-mentioned surface tension–driven instabilities persist in driven systems: the rivulet on a homogeneously i lled chemical channel is stable or unstable with respect to pearling independent of whether the luid lows along the channel or not [184,189]. However, the range of linear instability of the modes is shited toward smaller wavenumbers, which leads to larger droplets. he maximal growth rate increases with the low speed for well-i lled channels with contact angles at the channel edge larger than 90° [189] but for rivulets with low height, it decreases with the low velocity [184]. While for low low rates the inluence of the low on the onset of instability is moderate, the coarsening dynamics of the droplets changes qualitatively. he instability leads to a string of almost equally sized droplets. Without low, larger droplets grow at the expense of their smaller neighbors because in them the pressure is lower. But the transport of luid between the droplets is slow because it occurs through the relatively thin luid i lm connecting them. If there is low in the chemical channel, e.g., driven by a body force like gravity or by centrifugal forces, larger droplets move faster than smaller ones because the driving force is proportional to their volume but the friction is proportional to the base area. Accordingly, the coarsening process is accelerated signiicantly because big drops overrun smaller ones and, as a consequence of their volume increase, move even faster [189]. Droplets or rivulets on a chemical channel have a lower free energy than droplets on the surrounding hydrophobic substrate. In the macroscopic picture, a droplet residing near a sharp chemical step between a homogeneous hydrophilic and a homogeneous hydrophobic part of the substrate does not respond to the presence of the step unless its three-phase contact line reaches the step: moving the droplet slightly in lateral directions does not change the free energy of the system. Only if the droplet spans the step, it will experience a lateral force pulling it toward the more wettable side. However, if the initial droplet has a rather low height so that its initial contact angle is much smaller than the equilibrium contact angle on either side of the substrate, it can happen that during its initial contraction process, the droplet ends up completely on the less wettable side of the step and stays there [190]. On the nanoscale, however, the droplets respond the presence of the chemical step close to them due to the long-ranged intermolecular interactions and, as a result, they will start to migrate. In analogy to the behavior of droplets in the vicinity of topographic steps, the direction of motion is given by the diference of the Hamaker constants of the substrates on the two sides of the chemical step: the droplet moves toward the side with the

11-18

larger Hamaker constant [191]. Since the equilibrium contact angle is determined by the interplay of the long-ranged and the short-ranged parts of the intermolecular potentials, there are situations in which the droplet moves toward the less wettable side, i.e., in the unexpected direction. Starting on the less wettable side, it moves away from the step with a velocity that decreases rapidly as a function of the distance from the step. Starting on the other side, it moves toward the step where its advancing three-phase contact line gets pinned before crossing over to the less wettable side. Also the behavior of nanodroplets spanning the chemical step difers qualitatively from the macroscopically expected one. Within the macroscopic picture, the driving force for droplet migration across a chemical step is the diference in equilibrium contact angles on both sides. However, microscopic droplets are driven by the integral, over the droplet surface, of the laterally varying disjoining pressure. In the limiting case of large drops one recovers the macroscopic behavior: the drops are so tall, that the integral of the disjoining pressure over the drop surface renders the efective interface potential, which is related to the equilibrium contact angle via Equation 11.30. For nanodroplets, the disjoining pressure at the droplet apex has not yet vanished so that the driving force is not given by the diference in contact angles at the two sides of the step. In fact, even the sign of the force can change with the droplet size [192] such that small droplets can migrate to the unexpected side of the chemical step. his might have important implications for the coarsening dynamics of droplets near chemical boundaries, which is strongly inluenced by the migration of droplets across chemical steps [193]. Although this has not yet been discussed in detail, chemical gradients can be expected to act in directions that differ for macroscopic and microscopic droplets.

11.6 Summary and Outlook Nanoluidics is a wide ield of research combining physics, chemistry, and engineering. It poses experimental as well as theoretical challenges with a variety of possible applications. On the experimental side, the main challenge is to probe very sot systems with suicient resolution and contrast without perturbing them with the probe. In this context, AFM is by far the most widely used method for imaging, followed by ellipsometry and scattering techniques. he main theoretical challenge is to bridge the gap in length and time scales between the molecular motion and the collective movement of the luid, e.g., the translation of droplets. Top-down approaches combine macroscopic hydrodynamics with equilibrium statistical physics and yield mesoscopic hydrodynamic model equations, which (partially) include the efects of boundary slip, thermal luctuations, and the inite range of molecular interactions. Bottom-up approaches for nonequilibrium systems are only available for a small class of systems with purely dif usive dynamics. For simple liquids, one has to resort to molecular dynamics simulations. he most intensively studied and best understood systems are dewetting thin i lms and droplets spreading on homogeneous

Handbook of Nanophysics: Principles and Methods

substrates. However, there are still open questions concerning the intrinsic dynamics of moving three-phase contact lines and in the adjoining precursor ilms, in particular for liquid crystals, for which the precursor i lm has a distinct structure inducing peculiar instabilities of the three-phase contact line [194]. Among the greatest challenges in the ield is to control the behavior of open nanoluidic systems in order to guide luids or to pattern i lms on the nanoscale. Both problems are related in that chemical wettability patterns are used in order to achieve this. Chemical patterns are used not only to guide liquids but also to control their low [165]. While in technological applications, micron-sized channels are used, all biological cells use a large number of nanochannels to exchange ions with the extracellular medium. hese ion-channels are highly sophisticated nanoluidic devices. While the selectivity to a certain type of ions is due to a combination of steric efects and electrostatics, gating, i.e., the process of opening and closing the channels, has been recently related to capillary evaporation, i.e., the formation of a vapor or gas bubble inside the channel, which blocks the ion exchange [4]. his model for gating also provides a new insight for understanding the way narcotics work. In summary, understanding open nanoluidic systems is the key to the miniaturization of microluidic systems down to the nanoscale as well as a prerequisite for further progress in many active areas in biology and even medicine.

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166. Abbott S, Ralston J, Reynolds G, and Hayes R. 1999. Reversible wettability of photoresponsive pyrimidinecoated surfaces. Langmuir 15:8923–8928 167. Lahann J, Mitragotri S, Tran TN, Kaido H, Sundaram J, Choi IS, Hofer S, Somorjai GA, and Langer R. 2003. A reversible switching surface. Science 299:371–374. 168. Greenspan HP. 1978. On the motion of a small viscous droplet that wets a surface. J. Fluid Mech. 84:125–143. 169. Moumen N, Subramanian RS, and McLaughlin JB. 2006. Experiments on the motion of drops on a horizontal solid surface due to wettability gradients. Langmuir 22:2682–2690. 170. Pismen LM and hiele U. 2006. Asymptotic theory for a moving droplet driven by a wettability gradient. Phys. Fluids 18:042104. 171. Chaudhury MK and Whitesides GM. 1992. How to make water run uphill. Science 256:1539–1541. 172. Delamarche E, Juncker D, and Schmid H. 2005. Microluidics for processing surfaces and miniaturizing biological assays. Adv. Mater. 17:2911–2933. 173. Darhuber AA and Troian SM. 2005. Principles of microluidic actuation by modulation of surface stresses. Ann. Rev. Fluid Mech. 37:425–455. 174. Dietrich S, Popescu MN, and Rauscher M. 2005. Wetting on structured substrates. J. Phys.: Condens. Matter 17:S577–S593. 175. Rauscher M, Dietrich S, and Koplik J. 2007. Shear low pumping in open microluidic systems. Phys. Rev. Lett. 98:224504. 176. Huang JJ, Shu C, and Chew YT. 2008. Numerical investigation of transporting droplets by spatiotemporally controlling substrate wettability. J. Colloid Interface Sci. 328:124–133. 177. Bauer C and Dietrich S. 1999. Wetting ilms on chemically heterogeneous substrates. Phys. Rev. E 60:6919–6941. 178. Bauer C and Dietrich S. 1999. Quantitative study of laterally inhomogeneous wetting ilms. Eur. Phys. J. B 10:767–779. 179. Checco A, Gang O, and Ocko BM. 2006. Liquid nanostripes. Phys. Rev. Lett. 96:056104. 180. Bauer C, Dietrich S, and Parry AO. 1999. Morphological phase transitions of thin luid ilms on chemically structured substrates. Europhys. Lett. 47:474–480.

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181. Brinkmann M and Lipowsky R. 2002. Wetting morphologies on substrates with striped surface domains. J. Appl. Phys. 92:4296–4306. 182. Lipowsky R, Brinkmann M, Dimova R, Franke T, Kierfeld J, and Zhand X. 2005. Droplets, bubbles, and vesicles at chemically structured surfaces. J. Phys.: Condens. Matter 17:S537–S558. 183. Davis JM and Troian SM. 2005. Generalized linear stability of noninertial coating lows over topographical features. Phys. Fluids 17:072103. 184. Mechkov S, Rauscher M, and Dietrich S. 2008. Stability of liquid ridges on chemical micro- and nanostripes. Phys. Rev. E 77:061605. 185. Gau H, Herminghaus S, Lenz P, and Lipowsky R. 1999. Liquid morphologies on structured surfaces: From microchannels to microchips. Science 283:46–49. 186. Darhuber AA, Troian SM, Miller SM, and Wagner S. 2000. Morphology of liquid microstructures on chemically patterned surfaces. J. Appl. Phys. 87:7768–7775. 187. Lenz P, Fenzl W, and Lipowsky R. 2001. Wetting of ringshaped surface domains. Europhys. Lett. 53:618–624. 188. Porcheron F, Monson PA, and Schoen M. 2006. Wetting of rings on a nanopatterned surface: A lattice model study. Phys. Rev. E 73:041603. 189. Koplik J, Lo TS, Rauscher M, and Dietrich S. 2006. Pearling instability of nanoscale luid low conined to a chemical channel. Phys. Fluids 18:032104. 190. Ondarçuhu T and Raphaël E. 1992. Étalement d’un ruban liquide à cheval entre deux substrats solides diférents. C. R. Acad. Sci. Paris, Sèrie II 314:453–456. 191. Moosavi A, Rauscher M, and Dietrich S. 2008. Motion of nanodroplets near chemical heterogeneities. Langmuir 24:734–742. 192. Moosavi A, Rauscher M, and Dietrich S. 2008. Size dependent motion of nanodroplets on chemical steps. J. Chem. Phys. 129:044706. 193. Jéopoldès J and Bucknall DG. 2005. Coalescence of droplets on chemical boundaries. Europhys. Lett. 72:597–603. 194. Poulard C and Cazabat AM. 2005. he spontaneous spreading of nematic liquid crystals. Langmuir 21:6270–6276.

12 Capillary Condensation in Conined Media 12.1 Physics of Capillary Condensation .....................................................................................12-1 Relevance in Nanosystems • Physics of Capillary Condensation • Mesoporous Systems

12.2 Capillary Adhesion Forces ...................................................................................................12-5 Measurements by SFA • Measurements by Atomic Force Microscopy • Measurements in Sharp Cracks

Elisabeth Charlaix Université Claude Bernard Lyon 1

Matteo Ciccotti Université Montpellier 2

12.3 Inluence on Friction Forces ..............................................................................................12-12 Static Friction and Powder Cohesion • Time and Velocity Dependence in Nanoscale Friction Forces • Friction Forces at Macroscale

12.4 Inluence on Surface Chemistry ........................................................................................12-15 References.........................................................................................................................................12-16

12.1 Physics of Capillary Condensation 12.1.1 Relevance in Nanosystems As the size of systems decreases, surface efects become increasingly important. Capillary condensation, which results from the efect of surfaces on the phase diagram of a luid, is an ubiquitous phenomenon at the nanoscale, occurring in all conined geometries, divided media, cracks, or contacts between surfaces (Bowden and Tabor 1950). he very large capillary forces induced by highly curved menisci have strong efect on the mechanical properties of contacts. he impact of capillary forces in micro/ nano electromechanical systems (MEMS & NEMS) is huge and oten prevents the function of small-scale active systems under ambient condition or causes damage during the fabrication process. Since the nanocomponents are generally very compliant and present an elevated surface/volume ratio, the capillary forces developing in the conined spaces separating the components when these are exposed to ambient condition can have a dramatic efect in deforming them and preventing their service. Stiction or adhesion between the substrate (usually silicon based) and the microstructures occurs during the isotropic wet etching of the sacrificial layer (Bhushan 2007). The capillary forces caused by the surface tension of the liquid between the microstructures (or in the gaps separating them from the substrate) during the drying of the wet etchant cause the two surfaces to adhere together. Figure 12.1 shows an example of the efect of drying ater the nanofabrication of a system of lamellae of width and spacing of 200 nm and variable height. Separating

the two surfaces is oten complicated due to the fragile nature of the microstructures.* In divided media, capillary forces not only control the cohesion of the media but also have dramatic inluence on the aging properties of materials. Since the condensation of liquid bridges is a irst-order transition, it gives rise to slow activated phenomena that are responsible for long time scale variations of the cohesion forces (cf. Section 12.2). Capillary forces also have a strong efect on the friction properties of sliding nanocontacts where they are responsible for aging efects and enhanced stickslip motion (cf. Section 12.3). Finally, the presence of capillary menisci and nanometric water i lms on solid surfaces has deep consequences on the surface physical and chemical properties, notably by permitting the activation of nanoscale corrosion processes, such as local dissolution and recondensation, hydration, oxidation, hydrolysis, and lixiviation. hese phenomena can lead either to the long-term improvement of the mechanical properties of nanostructured materials by recrystallization of solid joints or to the failure of microstructures due to crack propagation by stress corrosion (cf. Section 12.4).

12.1.2 Physics of Capillary Condensation Let us consider two parallel solid surfaces separated by a distance D, in contact with a reservoir of vapor at a pressure Pv and temperature T. If D is very large, the liquid–vapor * Stiction is oten circumvented by the use of a sublimating luid, such as supercritical carbon dioxide.

12-1

12-2

200 nm

Handbook of Nanophysics: Principles and Methods

5 μm

20 μm

4 μm

7 μm

(a)

4 μm

20 μm

200 nm (b)

(c)

FIGURE 12.1 Stiction efect due to drying in the nanofabrication of a nanomirror array (c). he spacing between the lamellae is 200 nm as described in (a) and imaged in (b). If the aspect ratio is larger than a critical value, the stifness of the lamellae becomes too small to withstand the attractive action of the capillary forces induced by the meniscus in the drying process. We remark that in drying processes the meniscus curvature and capillary pressure may be quite smaller than the equilibrium values (cf. Insert B), but they still have a great impact. (Ater Heilmann, R. et al., SPIE Newsroom, 2008)

equilibrium occurs at the saturating pressure Pv = Psat. For a i nite D, if the surface tension γsl of the wet solid surface (see Insert A) is lower than the one γsv of the dry solid surface, the solid favors liquid condensation. One should therefore ask if the solid can successfully stabilize a liquid phase when the vapor phase is stable in the bulk, i.e., Pv < Psat. To answer this question, one must compare the grand canonical potential (see Insert A) of two conigurations: the “liquid-i lled interstice,” which we shall call the condensed state, and the “vapor-i lled interstice,” i.e., the non-condensed state, with μ = μsat − Δμ the chemical potential of the reservoir (Figure 12.2). Outside of coexistence, i.e., if Δμ ≠ 0, the pressure in the two phases is diferent and is given by the thermodynamic relation ∂(P l − Pv)/∂μ = ρl − ρv (with ρl, ρv the number of molecules per unit volume in each phase). As the liquid is usually much more dense and incompressible than the vapor, the pressure diference reduces to (Pv − P l)(μ) ≃ ρlΔμ = ρl k BT ln(Psat/Pv) if the vapor can be considered as an ideal gas. hus, the condensed state is favored if the coni nement is smaller than the critical distance Dc(μ): ρl ΔμDc (μ) = 2( γ sv − γ sl )

(12.1)

he let-hand side of Equation 12.1 represents the free energy required to condense the unfavorable liquid state and the righthand side, the gain in surface energy. Dc(μ) is, thus, the critical distance that balances the surface interactions and the

Insert A: Surface Tension and Contact Angle

T

he surface tension of a luid interface is deined in terms of the work required to increase its area: ⎛ ∂F ⎞ γ lv = ⎜ ⎝ ∂Alv ⎟⎠ N l ,Vl , N v ,Vv ,T

Here F is the free energy of a liquid–vapor system, T its temperature, Alv the interface area, and Nl, Vl, Nv, Vv the number of molecules and the volume of each phase respectively (Rowlinson and Widom 1982). For a solid surface, one can likewise deine the diference of surface tension γsl − γsv for wet and dry surfaces in terms of the work dF required to wet a fraction dAsl of the surface initially in the dry state. It is shown in thermodynamics that the surface tension is a grand canonical excess potential per unit area. he total grand canonical potential of a multiphase system Ω = −PvVv − PV l l − PV s s + γ lv Alv + ( γ sl − γ sv ) Asl

is the potential energy for an open system. Its variation is equal to the work done on the system during a transformation, and its value is minimal at equilibrium. On the diagram of Insert B, let us consider a horizontal translation dx of the meniscus. At equilibrium, the grand canonical potential is minimum: dΩ = −P ldVl − PvdVv + (γsl − γsv)dAsl = 0. hus Pv − P l = (γsv − γsl)/D. But, according to Laplace’s law of capillarity, the pressure difference Pv − P l is also related to the curvature of the meniscus: Pv − Pl = γlv/r = 2γlv cos θ/D, where θ is the contact angle. We deduce the Young–Dupré law of partial wetting: γ lv cos θ = γ sv − γ sl

valid if S = γ sv − γ sl − γ lv ≤ 0

(12.2)

he parameter S is the wetting parameter (de Gennes et al. 2003). he situation S > 0 corresponds to perfect wetting. In this case, a thin liquid layer covers the solid surface (see Insert C).

12-3

Capillary Condensation in Coni ned Media

D

(a)

(b)

FIGURE 12.2 (a) Ωnon-condensed(μ) = 2Aγsv − DAPv(μ). (b) Ωcondensed(μ) = 2Aγsl − DAP l(μ).

bulk interactions to determine the phase diagram of the luid (Israelachvili 1992). From the above equation, it is clear that capillary condensation can occur only if the liquid wets, at least partially, the solid surfaces. In the case of partial wetting, the diference between the dry and the wet surface tension is related to the contact angle θ of the liquid onto the solid surface (see Insert A) and the critical distance reduces to Dc (μ) =

2 γ lv cos θ = 2rK cos θ ρl Δμ

(12.3)

where r K is the Kelvin’s radius associated to the undersaturation Δμ (see Insert B). For an estimation of the order of magnitude of the coninement at which capillary condensation occurs, consider the case of water at room temperature: γlv = 72 mJ/m2, ρl = 5.5 ×

104 mol/m3, and assume a contact angle θ = 30°. In ambient conditions with a relative humidity of Pv/Psat = 40%, one has r K ≃ 0.6 nm and Dc ≃ 1 nm. he scale is in the nanometer range, and increases quickly with humidity: it reaches 4 nm at 80% and 18 nm at 95% relative humidity. herefore, capillary condensates are ubiquitous in ambient conditions in high coninement situations. We see from the Laplace–Kelvin equation that the pressure in capillary condensates is usually very low: taking the example of water in ambient conditions with relative humidity Pv/Psat = 40%, the pressure in the condensates is P l = −120 MPa, i.e., −1200 bar. With these severe negative pressures, condensates exert strong attractive capillary forces on the surfaces to which they are adsorbed. hus capillary condensation is usually associated to important mechanical aspects, such as cohesion, friction, elastic instabilities and micro-structures destruction. Furthermore, if the liquid phase wets totally the solid surfaces (see Insert A), the surfaces may be covered by a liquid i lm even in a nonconi ned geometry (see Inserts C and D). In this case the critical distance for capillary condensation can be signiicantly enhanced at low humidity. In the case of water, the condensation of a liquid i lm has important consequences on surface chemistry as surface species can be dissolved in the liquid phase, and the capillary condensation at the level of contact between surfaces increases solute transport and is responsible for dissolution-recrystallization processes, which lead to slow temporal evolution of mechanical properties of the materials (cf. Section 12.4).

Insert B: Laplace–Kelvin Equation

A

nother way to address capillary condensation is to consider the coexistence of a liquid and its vapor across a curved interface. Because of the Laplace law of capillarity the pressure in the two phases are not equal: Pint − Pext = γlv/r, with r is the radius of mean curvature of the interface. he pressure is always higher on the concave side. Because of this pressure diference the chemical potential of coexistence is shited:

rK

θ

We have assumed here that the liquid is on the convex side, a coniguration compatible with an undersaturation. For an ideal vapor and an uncompressible liquid: Pl (μ) ≃ ρl Δμ + Pv (μ)

(12.5)

Dc

γ ⎞ ⎛ μ v (Pv ) = μ l ⎜ Pl = Pv − lv ⎟ = μ sat − Δμ ⎝ r ⎠

⎛P ⎞ Δμ = kBT ln ⎜ sat ⎟ ⎝ Pv ⎠

⎛P ⎞ γ lv = Pv (μ) − Pl (μ) ≃ ρl Δμ = ρl kBT ln ⎜ sat ⎟ ⎝ Pv ⎠ rK

(12.4)

from where we get the Laplace–Kelvin equation for the equilibrium curvature (homson 1871):

We check that in a lat slit, the critical coni nement and the Kelvin’s radius are related by Dc = 2r Kcos θ. he capillary condensate is thus limited by a meniscus whose curvature is equal to the Kelvin’s radius. he Laplace–Kelvin law is however more general than Equation 12.3 and allows to predict the critical coni nement in arbitrarily complex geometries.

12-4

Handbook of Nanophysics: Principles and Methods

Insert C: Perfect Wetting: The Disjoining Pressure

W

hen the energy of the dry solid surface γsv is larger than the sum γsl + γlv of the solid–liquid and liquid–vapor interfaces (S > 0), the ai nity of the solid for the luid is such that it can stabilize a liquid ilm of thickness e in equilibrium with an undersaturated vapor without any coninement. he existence of such wetting i lms must be taken into account when determining the liquid– vapor equilibrium in a conined space.

thermodynamic properties of the liquid ilm. It is minimum at equilibrium, so that the pressure in the liquid is not the same as in the vapor:

Pv (μ) − Pl (μ) = −

dWslv (e) = Πd de

he pressure diference Πd is called the disjoining pressure. he interface potential Wslv(e) and the wetting parameter γ∼sv(Πd) − γsl − γlv are Legendre transforms of each other:

e

Wslv (e) = ɶγ sv (Π d ) − γ sl − γ lv − eΠ d e = In the theory of wetting, liquid ilms are described by the concept of interface potential (Derjaguin 1944; de Gennes 1985). he excess potential per unit area of a solid surface covered by a wetting ilm does not reduce to the sum γsl + γlv of the surface tensions: a further excess must be taken into account corresponding to the fact that the molecular interactions which generate the surface tension do not operate over a thickness of liquid that can be considered ininite. he excess grand canonical potential of the humid solid surface of area A is then Ωsv = ɶγ sv = γ sl + γ lv + Wslv (e) − e(Pl (μ) − Pv (μ)) A

(12.6)

where the interface potential Wslv(e) vanishes for a macroscopic ilm. he excess potential Ωsv/A describes the

12.1.3 Mesoporous Systems Capillary condensation has been extensively studied in relation to sorption isotherms in mesoporous media—i.e., nanomaterials with pore sizes between 2 and 50 nm—in the prospect of using those isotherms for the determination of porosity characteristics such as the specific area and the pore size distribution. Figure 12.3, for instance, shows a typical adsorption isotherm of nitrogen in a mesoporous silica at 77 K. In a i rst domain of low vapor pressure, the adsorption is a function of the relative vapor saturation only, and corresponds to the mono- and polylayer accumulation of nitrogen on the solid walls. h is regime allows the determination of the speciic area, for instance through the Brunauer–Emmett–Teller model (Brunauer et al. 1938). At a higher pressure, a massive

(12.7)

∂γɶsv ∂Π d

(12.8)

For instance in the case of van der Waals forces, the interface potential results from dipolar interactions going as 1/r6 between molecules, and varies as 1/e 2:

Wslv (e) = −

Aslv 12πe 2

Π d (e) = −

ɶγ sv = γ sl + γ lv + ⎛⎜ −9 Aslv ⎞⎟ ⎝ 16π ⎠

Aslv 6πe 3

1/3

Π

(12.9)

2/3 d

he Hamaker constant Aslv has the dimension of an energy (Israelachvili 1992). It lies typically between 10−21 and 10−18 J and has negative sign when the liquid wets the solid, i.e., if the interface potential is positive.

adsorption corresponds to capillary condensation, and the porous volume is completely i lled by liquid nitrogen before the saturating pressure is reached. h is adsorption branch shows usually a strong hysteresis and the capillary desorption is obtained at a lower vapor pressure than the condensation. h is feature underlines the i rst-order nature of capillary condensation. It is shown in the next paragraph that for suficiently simple pore shapes the desorption branch is the stable one and corresponds to the liquid–vapor equilibrium through curved menisci. he desorption branch may be used to determine the pore size distribution of the medium through the Laplace–Kelvin relation using appropriate models (BarretJoyner-Halenda, Barrett et al. 1951). More can be found on the physics of phase separation in coni ned media in the review of Gelb et al. (1999).

12-5

Capillary Condensation in Coni ned Media

Insert D: Perfect Wetting: The Prewetting Transition and Capillary Condensation

I

n a situation of perfect wetting, a liquid i lm condenses on a lat isolated solid surface if the humid solid surface tension γ∼sv is lower than the dry one: ɶγ sv = γ sl + γ lv + Wslv (e) + eΠ d ≤ γ sv

(12.10)

If the i lm exists, its thickness at equilibrium with the vapor is implicitly determined by the analogue of the Laplace–Kelvin equation (12.5): Π d (e) = −

∂Wslv (e) P = Pv (μ) − Pl (μ) = ρl kBT ln sat ∂e Pv

(12.11)

he thickness e* realizing the equality in relation (12.10) is a minimum thickness for the wetting i lm, and the associated chemical potential μ* and vapor pressure Pv* correspond to a prewetting transition. Above the transition the thickness of the adsorbed i lm increases with the vapor pressure until it reaches a macroscopic value at saturation. In the case of van der Waals wetting, for instance, the vapor pressure at the prewetting transition is given by

9 8

A.Q. (mmol/g)

7 6 5 4 3 2 1 0

0

0.2

0.4 Pv/Psat

0.6

0.8

1

FIGURE 12.3 Sorption isotherm of nitrogen at 77 K in Vycor (A.Q., adsorbed quantity). (From Torralvo, M.J. et al., J. Colloid Interface Sci., 206, 527, 1998. With permission.)

12.2 Capillary Adhesion Forces 12.2.1 Measurements by SFA Because of their high curvature, capillary condensates exert a large attractive force on the surfaces they connect. Hence, these

Π *d = ρl kBT ln(Psat /Pv* ) = 16πS 3/(−9 Aslv ) with S the wetting parameter (12.2). In a conined geometry such as sketched in Figure 12.2, the grand canonical potential of the “noncondensed” state is shited above the prewetting transition because the solid surface tension γsv has to be replaced by the humid value γ∼sv. he modiied Equation 12.1 and the Laplace–Kelvin relation γlv/r K = ∏ d = ρl Δμ give the critical distance (Derjaguin and Churaev 1976): Dc = 2rK + 2e + 2

Wslv (e) Πd

(12.12)

he diference with the partial wetting case is not simply to decrease the available interstice by twice the i lm thickness. In the case of van der Waals forces, for example, Dc = 2rK + 3e with e = (− Aslv /6πρl Δμ)1/3

(12.13)

he efect of adsorbed ilms becomes quantitatively important for determining the critical thickness at which capillary condensation occurs in situations of perfect wetting. large forces represent a valuable tool to study the thermodynamic and mechanical properties of the condensates. Experimentally, the ideal geometry involves a contact with at least one curved surface—either a sphere on a plane, two spheres or two crossed cylinders—so that locally the topology resumes to a sphere of radius R close to a lat. Surface force apparatus (SFA) use macroscopic radius R in order to take advantage of the powerful Derjaguin approximation, which relates the interaction force F(D) at distance D to the free energy per unit area (or other appropriate thermodynamic potential) of two lat parallel surfaces at the same distance D (see Insert E). It must be emphasized that the Derjaguin approximation accounts exactly for the contribution of the Laplace pressure, and more generally for all “surface terms” contributing to the force, but it does not account properly for the “perimeter terms” such as the line forces acting on the border of the meniscus, so that it neglects terms of order rK /R . In a surrounding condensable vapor, the appropriate potential is the grand potential per unit area considered in Figure 12.2: Ω(D < Dc ) = (ρl − ρv )ΔμD + 2γ sl + Wsls (D) Ω(D > Dc ) = 2γ sv + Wsvs (D)

(12.14)

12-6

Handbook of Nanophysics: Principles and Methods

Insert E: Derjaguin Approximation

C

onsider a sphere of macroscopic radius R at a distance D ρgh. Several experiments have recently been investigating the applicability of this relation and the consistency of the model with capillarity-based adhesion forces. A irst series of experiments has shown that the injection of a very small i xed amount of nonvolatile liquids to a granular heap can signiicantly increase the critical angle of stability (Hornbaker et al. 1997;

12-13

Capillary Condensation in Coni ned Media

Halsey and Levine 1998). A diferent kind of experiments has then investigated the more subtle efect of interparticle liquid bridges formed by condensation from a humid atmosphere (Bocquet et al. 1998; Fraysse et al. 1999). While the irst kind of experiments can not be related to equilibrium quantities, the second kind has allowed a deep investigation of the irst order transition of capillary condensation. he critical angle was shown to be logarithmically increasing function of the aging time tw (ater shaking) of a granular heap (Bocquet et al. 1998): tan θm = tan θ0 + α

log10 t w cos θm

(12.25)

he coeicient α is a measure of the aging behavior of friction in the granular medium and it was shown to be an increasing function of relative humidity, being substantially null in dry air. Moreover, the aging behavior was shown to be enhanced by both increasing the rest angle of the heap during the aging period and by intentionally wearing the particles (by energetic shaking) before the measurements (Restagno et al. 2002). he logarithmic time dependency of the adhesion forces was modeled as an efect of the dynamic evolution of the total amount of condensed water related to progressive illing of the gaps induced by the particle surface roughness (cf. Insert H). he increase of the aging rate α with the rest angle before the measurements can be explained by the efect of a series of small precursor

Insert H: Effect of Roughness on Adhesion Forces

T

he irst-order efect of roughness is to screen the interactions between surfaces, with an increased eiciency for the shorter range interaction. he molecular range solid–solid interactions are thus very eiciently screened by nanoscale roughness, while the capillary interactions have a more subtle behavior. hree main regimes were identiied by Halsey and Levine (1998) as a function of the volume of liquid V available for the formation of a capillary bridge between two spheres: (1) the asperity regime prevails for small volumes, where the capillary force is dominated by the condensation around a single or a small number of asperities; (2) the roughness regime governs the intermediate volume range, where capillary bridges are progressively formed between a larger number of asperities and the capillary force grows linearly with V (as in Hornbaker et al. 1997); (3) the spherical regime where Equation 12.16 for the force caused by a single larger meniscus is recovered. he extension of the three domains is determined by the ratio between the characteristic scales of the gap distribution (height lR and correlation length ξ) and the sphere radius R. When dealing with capillary bridges in equilibrium with undersaturated humidity, the roughness regime should be reduced to a narrow range of humidity values such that lR ~ r k, in which the capillary force jumps from a weak value to the spherical regime value (as in the experiments of Fraysse et al. 1999). However, due to the irst-order nature of capillary condensation transition, the equilibrium condition may be preceded by a long time-dependent region where the capillary bridges between asperities are progressively formed due to thermal activation. he energy barrier for the formation of a liquid bridge of volume vd ∼ hA between asperities of curvature radius Rc may be expressed as (Restagno et al. 2000):

ΔΩ = v dρl Δμ = v dρl kBT log

Psat Pv

Rc A

R

h

he probability that condensation occurs before a time tw is ⎛ t ⎞ Π(t w ) = 1 − exp ⎜ − w ⎟ ⎝ τ⎠ ⎛ ΔΩ ⎞ τ = τ0 exp ⎜ ⎟ ⎝ kBT ⎠ By integrating over a roughness dependent distribution of Ntot nucleation sites, each one contributing with a force 2πγRc, an expression for the total force can be derived (Bocquet et al. 2002) that predicts a logarithmic increase as a function of the aging time tw: FC = F0 + 2πγRc N tot

kBT t log w V0ρl Δμ τ0

(12.26)

where V0 is a roughness-dependent range for the distribution of the individual liquid bridge volume vd.

12-14

Handbook of Nanophysics: Principles and Methods

beads adjustments, inducing a modiication of the contacts and of the condensed bridges population. he efect of wear of the particles can be explained by accounting for both the increased roughness of the beads and the presence of a wear-induced dust consisting in small particles that signiicantly enhance the nucleation of further bridges (Restagno et al. 2002).

12.3.2 Time and Velocity Dependence in Nanoscale Friction Forces Sliding friction is an everyday life issue, and its universal nature emerges from the great variety of industrial processes and natural phenomena in which it plays a central role (Persson 2000). With the miniaturization of moving components in many technological devices, such as microelectromechanical systems and hard disks, it has become of primary importance to study surface forces like friction, viscous drag and adhesion at microscales and nanoscales. he relevance of surface forces is greatly enhanced with regard to volume forces when the spatial scale is reduced to nanometers, but another major physical change comes from the increasing role of thermal luctuations in the surface processes. AFM has become the most eicient tool to study surface forces at the nanoscale, and the AFM tip sliding on a surface can oten be considered as a model system for technologically relevant devices. he terminal apex of typical AFM tips can be roughly approximated by a sphere of radius between 10 and 100 nm, and the AFM contact imaging of a nanoscale rough surface can provide both a measurement of its roughness through the vertical delection of the probe cantilever and a measurement of the friction forces through the dependence of the lateral delection of the cantilever on the scan speed and on the normal applied load. Nanoscale friction was rapidly shown not to respect the Amonton laws, being dependent on both sliding velocity and normal load. Moreover, it was shown to be strongly afected by the nanoscale roughness of the substrate and by the wetting properties of both the AFM tip and the substrate as well as by relative humidity. Nanofriction measurements have long been controversial, but recent careful measurements in controlled atmosphere have allowed deining a clearer scenario. he sliding kinetics of an AFM tip has been shown to be determined by both the thermally activated stick-slip dynamics of the AFM tip on the substrate and the time-dependent formation of capillary bridges between the tip and the asperities of the rough substrate (cf. Insert H). When relative humidity is low, or the substrate is weakly wettable, stick-slip sliding has a dominant efect and results in a positive logarithmic dependence of the friction force on the sliding velocity (Gnecco et al. 2000; Riedo et al. 2003). he AFM tip keeps being stuck on nanoscale asperities and intermittently slips when thermal luctuations allow to overcome a local energy barrier, which is progressively reduced by the accumulation of elastic energy due to the scanning. he dynamic friction force can be described by the following equation: ⎛ v⎞ FF = μ(FN + FSS ) + μ[FC (t )] + m log ⎜ ⎟ ⎝ vB ⎠

(12.27)

where FN is the normal force FSS is the solid-solid adhesion force within the liquid FC(t) describes the eventual presence of time dependent capillary forces and the last term describes the positive velocity dependence induced by stick-slip motion v B is a characteristic velocity For more hydrophilic substrates, higher relative humidity, or increasing substrate roughness, the formation of capillary bridges and wetting ilms deeply modiies the friction dynamics letting the friction force be a logarithmically decreasing function of the sliding velocity (Riedo et al. 2002). his efect was successfully explained by applying the modeling developed by Bocquet et al. (1998) to account for the time-dependent thermally activated formation of capillary bridges between the nanoscale asperities of both the probe and the substrate. When the two rough surfaces are in relative sliding motion, the proximity time tw of opposing tip and substrate asperities is a decreasing function of the sliding velocity v. he number of condensed capillary bridges (and thus the total capillary force) is thus expected to be a decreasing function of the sliding velocity according to Equation 12.26, and this trend should be relected in the dynamic friction force according to Equation 12.27. he study of AFM sliding friction forces has thus become an important complementary tool to study the time and load dependence of capillary forces. Notably, the friction forces were shown to present a 2/3 power law dependence on the applied load FN (Riedo et al. 2004) and an inverse dependence on the Young modulus E of the substrate (Riedo and Brune 2003). hese two efects were both explained by the increase of the nominal contact area where capillary bridges are susceptible to be formed, when either the normal load is increased, or the Young modulus of the substrate is decreased. he following equation for the capillary force during sliding was proposed in order to account for all these efects: ⎛ 1 ⎞ log(v0/v ) 1⎛ 9 ⎞ FC = 8πγ lv R(1 + KFN2/3 ) ⎜ K= ⎜ rK ⎝ 16 RE 2 ⎟⎠ ⎝ ρllR Rc2 ⎟⎠ log(Psat /Pv )

1/3

(12.28) the variables being deined as in the Insert H. Quantitative measurements of the AFM friction forces were thus shown to be useful in determining several physical parameters of interest, such as an estimation of the AFM tip radius and contact angle or important information on the activation energy for the capillary bridge formation (Szoskiewicz and Riedo 2005). he formation of capillary bridges can have signiicant efects on the AFM imaging in contact mode due to the variations of the contact forces and consequently of the lateral forces during the scan. hundat et al. (1993) have investigated the efect of humidity on the contrast when measuring the atomic level topography of a mica layer. he topographic contrast is shown to decrease with humidity above 20% RH due to an increase of the lateral force that acts in deforming the AFM cantilever and thus inluences the measurement of the vertical delection.

12-15

Capillary Condensation in Coni ned Media

12.3.3 Friction Forces at Macroscale

12.4 Inluence on Surface Chemistry

Capillary forces can also afect the friction properties between macroscopic objects. In dry solid friction, aging properties have been studied on various materials, and have been related to the slow viscoplastic increase of the area of contact between asperities induced by the high values of the stress in the contact region (Baumberger et al. 1999). However, the importance of humidity has been reported by geophysicists in rock onto rock solid friction (Dieterich and Conrad 1984). In the presence of a vapor atmosphere, the static friction coeicient was shown to increase logarithmically with the contact time, while the dynamic friction coeicient was shown do decrease with the logarithm of the sliding velocity (Dieterich and Conrad 1984; Crassous et al. 1999). he irst efect is analog to the aging behavior of the maximum contact angle in granular matter as discussed in Section 12.3.1. he second efect is analogous to what observed in the sliding friction of a nanoscale contact as discussed in Section 12.3.2. However, the general behavior is strongly modiied due to the greater importance of the normal stresses that induce signiicant plastic deformation at the contact points. he aging behavior must then be explained by the combined action of the evolution of the contact population due to plastic deformation and the evolution of the number of capillary bridges due to thermally activated condensation. his induces a more complex dependence on the normal load, since this modiies both the elastic contact area and the progressive plastic deformation of the contacts, and thus inluences the residual distribution of the intersurface distances that govern the kinetics of capillary condensation. Based on these experimental observations, Rice and Ruina (1983) have proposed a phenomenological model for non stationary friction, in which friction forces depend on both the instantaneous sliding velocity v and a state variable φ according to

The presence of nanometric water films on solid surfaces has a signiicant impact on the surface physical and chemical properties. Chemistry in these extremely conined layers is quite diferent than in bulk liquids due to the strong interaction with the solid surface, to the presence of the negative capillary pressure, to the reduction of transport coeicients and to the relevance of the discrete molecular structure and mobility that can hardly be represented by a continuum description. he role of thermal luctuations and their correlation length also become more relevant. hin water i lms can have a major role in the alteration of some surface layer in the solid due to their efect on the local dissolution, hydration, oxidation, hydrolysis, and lixiviation, which are some of the basic mechanisms of the corrosion processes. Water condensation from a moist atmosphere is quite pure and it is thus initially extremely reactive toward the solid surface. However, the extreme coninement prevents the dilution of the corrosion products, leading to a rapid change in the composition and pH of the liquid i lm. Depending on the speciic conditions this can either accelerate the reaction rates due to increased reactivity and catalytic efects, or decelerate the reaction rate due to rapid saturation of the corrosion products in the i lm. his condition of equilibrium between the reactions of corrosion and recondensation can lead to a progressive reorganization of the structure of the surface layer in the solid. he extreme coninement and the signiicance of the luctuations can cause the generation of complex patterns related to the dissolutionrecondensation process, involving inhomogeneous redeposition of diferent amorphous, gel or crystalline phases (Christenson and Israelachvili 1987; Watanabe et al. 1994). he dissolution–recondensation phenomenon also happens at the capillary bridges between contacting solid grains or between the contacting asperities of two rough solid surfaces. When humidity undergoes typical ambient oscillations, capillary bridges and i lms are formed or swollen in moist periods, inducing an activity of diferential dissolution. he subsequent redeposition under evaporation in more dry conditions is particularly efective in the more conined regions, i.e., at the borders of the solid contact areas, acting as a weld solid bridge between the contacting parts (cf. Figure 12.11). his can be responsible of a progressive increase in the cohesion of granular matters, which has important applications in the pharmaceutical and food industry, and of the progressive increase of the static friction coeicient between contacting rocks. Another domain where the formation of capillary condensation has a determinant impact on the mechanical properties is the stress-corrosion crack propagation in moist atmosphere (cf. Ciccotti 2009 for a review). We already mentioned in Section 12.2.3 that the crack tip cavity in brittle materials like glass is so conined that signiicant capillary condensation can be observed at its interior. During slow subcritical crack propagation, the crack advances due to stress-enhanced chemical reactions of hydrolyzation and leaching that are deeply afected by the local

⎡ ⎛v⎞ ⎛ ϕv ⎞ ⎤ F (v, ϕ) = FN ⎢μ 0 + A log ⎜ ⎟ + B log ⎜ 0 ⎟ ⎥ ⎝ ⎠ ⎝ v d0 ⎠ ⎦ 0 ⎣ ϕɺ = 1 −

vϕ d0

(12.29)

(12.30)

where A and B are positive constants d 0 and v0 are characteristic values of the sliding distance and velocity he irst term accounts for the logarithmic dependence on the sliding velocity, while the second term accounts for the logarithmic dependence on the static contact time through the evolution of the state variable φ according to Equation 12.30. his phenomenological modeling can be applied to other intermittent sliding phenomena (peeling of adhesives, shear of a granular layer, etc.) and the signiicance of the state variable φ is not determined a priori. However, in the case of solid friction, the state variable φ can be related to the population of microcontacts and capillary bridges (Dieterich and Kilgore 1994).

12-16

FIGURE 12.11 MEB photograph of a solid bridge between two glass beads (magniication ×2700). (From Olivi-Tran, N. et al., Eur. Phys. J.B 25, 217, 2002. With permission.)

crack tip environment. Capillary condensation has a fundamental impact on several levels on the kinetics of this reaction: (1) the presence of a liquid phase makes the preadsorption of water molecules near the crack tip easier; (2) the negative Laplace pressure determines the chemical activity of the water molecules in the meniscus and directly afects the reaction rate; (3) the conined nature of the condensation along with its limited volume are responsible of an evolution of the chemical composition of the condensate that has a direct and major efect on the corrosion reactions at the crack tip, especially by changes of the pH and by the enrichment in alkali species due to stress-enhanced leaching (Célarié et al. 2007).

References Abramowitz, M. and Stegun, I. A. (eds.), 1972. Handbook of Mathematical Functions with Formulas, Graphs, and Mathematical Tables. New York: United States Government Printing. Barrett, E. P., Joyner, L. G., and Halenda, P. P. 1951. he determination of pore volume and area distributions in porous substances. 1. Computation from nitrogen isotherms. J. Am. Chem. Soc. 73: 373–380. Baumberger, T., Berthoud, P., and Caroli, C. 1999. Physical analysis of the state- and rate-dependent friction law. II. Dynamic friction. Phys. Rev. B 60: 3928–3939. Bhushan, B. (ed.), 2007. Springer Handbook of Nanotechnology. 2nd edn. New York: Springer. Bocquet, L., Charlaix, E., Ciliberto, S., and Crassous, J. 1998. Moisture-induced ageing in granular media and the kinetics of capillary condensation. Nature 296: 735–737. Bocquet, L., Charlaix, E., and Restagno, F. 2002. Physics of humid granular media. C. R. Physique 3: 207–215. Bowden, F. P. and Tabor, D. 1950. Friction and Lubrication in Solids. Oxford, U.K.: Clarendon Press.

Handbook of Nanophysics: Principles and Methods

Brunauer, S., Emmett, P. H., and Teller, E. 1938. Adsorption of gases in multimolecular layers. J. Am. Chem. Soc. 60: 309–319. Célarié, F., Ciccotti, M., and Marlière, C. 2007. Stress-enhanced ion difusion at the vicinity of a crack tip as evidenced by atomic force microscopy in silicate glasses. J. Non-Cryst. Solids 353: 51–68. Charlaix, E. and Crassous, J. 2005. Adhesion forces between wetted solid surfaces. J. Chem. Phys. 122: 184701. Christenson, H. K. 1985. Capillary condensation in systems of immiscible liquids. J. Colloid Interface Sci. 104: 234–249. Christenson, K. 1988. Adhesion between surfaces in undersaturated vapors–A reexamination of the inluence of meniscus curvature and surface forces. J. Colloid Interface Sci. 121: 170–178. Christenson, H. K. 1994. Capillary condensation due to van der Waals attraction in wet slits. Phys. Rev. Lett. 73: 1821–1824. Christenson, H. K. and Israelachvili, J. N. 1987. Growth of ionic crystallites on exposed surfaces. J. Colloid Interface Sci. 117: 576–577. Ciccotti, M. 2009. Stress-corrosion mechanisms in silicate glasses. J. Phys. D: Appl. Phys. 42: 214006. Ciccotti, M., George, M., Ranieri, V., Wondraczek, L., and Marlière, C. 2008. Dynamic condensation of water at crack tips in fused silica glass. J. Non-Cryst. Solids 354: 564–568. Cleveland, J. P., Anczykowski, B., Schmid, A. E., and Elings, V. B. 1998. Energy dissipation in tapping-mode atomic force microscopy. Appl. Phys. Lett. 72: 2613–2615. Crassous, J. 1995. Etude d’un pont liquide de courbure nanométrique: Propriétés statiques et dynamiques. PhD thesis. Ecole Normale Supérieure de Lyon, Lyon, France. Crassous, J., Charlaix, E., and Loubet, J. L. 1994. Capillary condensation between high-energy surfaces: Experimental study with a surface force apparatus. Europhys. Lett. 28: 37–42. Crassous, J., Loubet, J.-L., and Charlaix, E. 1995. Adhesion force between high energy surfaces in vapor atmosphere. Material Research Society Symposium Proceedings. 366: 33–38. Crassous, J., Bocquet, L., Ciliberto, S., and Laroche, C. 1999. Humidity efect on static aging of dry friction. Europhys. Lett. 47: 562–567. de Gennes, P. G. 1985. Wetting: Statics and dynamics. Rev. Modern Phys. 57: 827–863. de Gennes, P. G., Brochard, F., and Quere, D. 2003. Capillarity and Wetting Phenomena: Drops, Bubbles, Pearls, Waves. New York: Springer. de Lazzer, A., Dreyer, M., and Rath, H. J. 1999. Particle-surface capillary forces. Langmuir 15: 4551–4559. Derjaguin, B.V. 1944. A theory of capillary condensation in the pores of sorbents and of other capillary phenomena taking into account the disjoining action of polymolecular liquid ilms. Acta Physiochimica URSS 12: 181–200. Derjaguin, B. V. and Churaev, N. V. 1976. Polymolecular adsorption and capillary condensation in narrow slit pores. J. Colloid Interface Sci. 54: 157–175. Dieterich, J. H. and Conrad, G. 1984. Efect of humidity on time-dependent and velocity-dependent friction in rocks. J. Geophys. Res. 89: 4196–4202.

Capillary Condensation in Coni ned Media

Dieterich, J. H. and Kilgore, B. D. 1994. Direct observation of frictional contacts-new insights for state-dependent properties. Pure Appl. Geophys. 143: 283–302. Fisher, L. R. and Israelachvili, J. N. 1981. Direct measurement of the efect of meniscus force on adhesion: A study of the applicability of macroscopic thermodynamics to microscopic liquid interfaces. Coll. Surf. 3: 303–319. Fraysse, N., homé, H., and Petit, L. 1999. Humidity efects on the stability of a sandpile. Eur. Phys. J. B 11: 615–619. Gelb, L. D., Gubbins, K. E., Radhakrishnan, R., and SliwinskaBartkowiak, M. 1999. Phase separation in conined systems. Rep. Progr. Phys. 62: 1573–1659. Gnecco, E., Bennewitz, R., Gyalog, T., Loppacher, Ch., Bammerlin, M., Meyer, E., and Güntherodt, H.-J. 2000. Velocity dependence of atomic friction. Phys. Rev. Lett. 84: 1172–1175. Grimaldi, A., George, M., Pallares, G., Marlière, C., and Ciccotti, M. 2008. he crack tip: A nanolab for studying conined liquids. Phys. Rev. Lett. 100: 165505. Halsey, T. C. and Levine, A. J. 1998. How sandcastles fall. Phys. Rev. Lett. 80: 3141–3144. Heilmann, R., Ahn, M., and Schattenburg, H. 2008. Nanomirror array for high-eiciency sot x-ray spectroscopy. SPIE Newsroom. 27 August 2008. DOI: 10.1117/2.1200808.1235. Hornbaker, D. R., Albert, I., Barabasi, A. L., and Shifer, P. 1997. What keeps sandcastles standing? Nature 387: 765–766. Israelachvili, J. N. 1992. Intermolecular and Surface Forces. 2nd edn. New York: Academic Press. Kohonen, M. M., Maeda, N., and Christenson, H. K. 1999. Kinetics of capillary condensation in a nanoscale pore. Phys. Rev. Lett. 82: 4667–4670. Lefevre, B., Sauger, A., Barrat, J. L., Bocquet, L., Charlaix, E., Gobin, P. F., and Vigier, G. 2004. Intrusion and extrusion of water in hydrophobic mesopores. J. Chem. Phys. 120: 4927–4938. Maugis, D. 1992. Adhesion of spheres: he JKR-DMT transition using a dugdale model. J. Colloid Interface Sci. 150: 243–269. Maugis, D. and Gauthier-Manuel, B. 1994. JKR-DMT transition in the presence of a liquid meniscus. J. Adhes. Sci. Technol. 8: 1311–1322. Olivi-Tran, N., Fraysse, N., Girard, P., Ramonda, M., and Chatain, D. 2002. Modeling and simulations of the behavior of glass particles in a rotating drum in heptane and water vapor atmospheres. Eur. Phys. J. B 25: 217–222. Orr, F. M., Scriven, L. E., and Rivas, A. P. 1975. Pendular rings between solids: Meniscus properties and capillary force. J. Fluid Mech. 67: 723–742. Pakarinen, O. H., Foster, A. S., Paajanen, M., Kalinainen, T., Katainen, J., Makkonen, I., Lahtinen, J., and Nieminen, R. M. 2005. Towards an accurate description of the capillary force in nanoparticle-surface interactions. Model. Simul. Mater. Sci. Eng. 13: 1175–1186. Pallares, G., Ponson, L., Grimaldi, A., George, M., Prevot, G., and Ciccotti, M. 2009. Crack opening proile in DCDC specimen. Int. J. Fract. 156: 11–20. Persson, B. N. J. 2000. Sliding Friction: Physical Principles and Applications. 2nd edn. Heidelberg: Springer.

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Plateau, J. 1864. he igures of equilibrium of a liquid mass. In he Annual Report of the Smithsonian Institution. Washington D.C. pp. 338–369. Restagno, F., Bocquet, L., and Biben, T. 2000. Metastability and nucleation in capillary condensation. Phys. Rev. Lett. 84: 2433–2436. Restagno, F., Ursini, C., Gayvallet, H., and Charlaix, E. 2002. Aging in humid granular media. Phys. Rev. E 66: 021304. Rice, J. R. and Ruina, A. L. 1983. Stability of steady frictional slipping. J. Appl. Mech. 50: 343–349. Riedo, E., Lévy, F., and Brune, H. 2002. Kinetics of capillary condensation in nanoscopic sliding friction. Phys. Rev. Lett. 88: 185505. Riedo, E. and Brune, H. 2003. Young modulus dependence of nanoscopic friction coeicient in hard coatings. Appl. Phys. Lett. 83: 1986–1988. Riedo, E., Gnecco, E., Bennewitz, R., Meyer, E., and Brune, H. 2003. Interaction potential and hopping dynamics governing sliding friction. Phys. Rev. Lett. 91: 084502. Riedo, E., Palaci, I., Boragno, C., and Brune, H. 2004. he 2/3 power law dependence of capillary force on normal load in nanoscopic friction. J. Phys. Chem. B 108: 5324–5328. Rowlinson, J. S. and Widom, B. 1982. Molecular heory of Capillarity. Oxford, U.K.: Clarendon Press. Szoskiewicz, R. and Riedo, E. 2005. Nucleation time of nanoscale water bridges. Phys. Rev. Lett. 95: 135502. homson, W. 1871. On the equilibrium of vapour at a curved surface of liquid. Phil. Mag. 42: 448–452. hundat, T., Zheng, X. Y., Chen, G. Y., and Warmack, R. J. 1993. Role of relative humidity in atomic force microscopy imaging. Surf. Sci. Lett. 294: L939–L943. Torralvo, M. J., Grillet, Y., Llewellyn, P. L., and Rouquerol, F. 1998. Microcalorimetric study of argon, nitrogen and carbon monoxide adsorption on mesoporous Vycor glass. J. Colloid Interface Sci. 206: 527–531. Verdaguer, A., Sacha, G. M., Bluhm, H., and Salmeron, M. 2006. Molecular structure of water at interfaces: Wetting at the nanometer scale. Chem. Rev. 106: 1478–1510. Wan, K. T., Smith, D. T., and Lawn, B. R. 1992. Fracture and contact adhesion energies of mica-mica, silica-silica, and mica-silica interfaces in dry and moist atmospheres. J. Am. Ceram. Soc. 75: 667–676. Watanabe, Y., Nakamura, Y., Dickinson, J. T., and Langford, S. C. 1994. Changes in air exposed fracture surfaces of silicate glasses observed by atomic force microscopy. J. Non-Cryst. Solids 177: 9–25. Xiao, X. and Qian, L. 2000. Investigation of humidity-dependent capillary force. Langmuir 16: 8153–8158. Xu, L., Lio, A., Hu, J., Ogletree, D. F., and Salmeron, M. 1998. Wetting and capillary phenomena of water on mica. J. Phys. Chem. B 102: 540–548. Zimon, A. D. 1969. Adhesion of Dust and Powder. New York: Plenum Press. Zitzler, L., Herminghaus, S., and Mugele, F. 2002. Capillary forces in tapping mode atomic force microscopy. Phys. Rev. B 66: 155436.

13 Dynamics at the Nanoscale 13.1 Introduction ...........................................................................................................................13-1 13.2 Time-Dependent Behavior and the II–VI Nanodot .........................................................13-2 Growth and What Stops It • Vibrational Spectra of Quantum Dots • Dynamics and Nanocrystal Structure • Intermittency and Luminescence

13.3 Cycles of Excitation and Luminescence .............................................................................13-7 Optical Excitation Cycle: Cooling • Electron–Phonon Coupling and Huang–Rhys Factors

A. Marshall Stoneham University College London

Jacob L. Gavartin Accelrys Ltd.

13.4 Where the Quantum Enters: Exploiting Spins and Excited States ................................13-9 13.5 Scent Molecule: Nasal Receptor ..........................................................................................13-9 13.6 Conclusions...........................................................................................................................13-11 Acknowledgments ...........................................................................................................................13-11 References.........................................................................................................................................13-11

13.1 Introduction At the nanoscale, time-dependent behavior gains importance and standard properties of the bulk crystal are less crucial. Some of the dynamical behavior is random: luctuations may control rate processes and thermal ratchets become possible. Dynamics is important in the transfers of energy, signals, and charge. Such transfer processes are especially eiciently controlled in biological systems. Other dynamical processes are crucial for control at the nanoscale, such as to avoid local failures in gate dielectrics, to manipulate structures using electronic excitation, or to manipulate spins as part of quantum information processing. Our aim here is to scope the wide-ranging time-dependent nanoscale phenomena. Why does dynamics at the nanoscale deserve a special attention? he prime reason is that the timescales of processes and the length scales of a nanosystem oten become interrelated, so that a range of dynamical properties show signiicant size dependences. hese properties fall into a number of classes. A fundamental category relates to linear response efects, ultimately based on vibrational or electronic spectra. Another category of dynamical properties are nonlinear phenomena, including exciton decay mechanisms and energy dissipation. hese are related to phenomena that occur when the thermodynamic limit is not reached or when thermal equilibrium is not attained. A further category includes transport phenomena: this is the mean free path or a dif usion distance l comparable to the system size L, when diferent factors are considered, than when l is controlled by carrier concentration. And, of course, there is the question of heterogeneity, and how behavior depends on the relative fractions of surface and bulk atoms.

A cluster of 100 atoms in thermal equilibrium at room temperature will have root mean square volume luctuations of the order of 1%, similar to the root mean square volume luctuation of a human breathing normally. It is true that the timescales difer by a factor of order 1012, but the example emphasizes the ubiquitous nature of its dynamics. Nanoparticles also have other characteristics: they grow, restructure, and interact. Electronic excitation leads to processes on the femtosecond timescale, to relaxation processes on the picosecond timescale, and to optical and nonradiative transitions on the nano- and microsecond timescales. Biological processes at the nanoscale are more complex and surprisingly eicient. Such processes may involve energy propagation, signal propagation, and the controlled and correlated movements of many atoms. Biological systems contain molecular motors that operate with relatively sot components. Even in living humans, coherent vibrational excitations, so-called solitons, seem to shit modest amounts of energy with minimal loss. When a large molecule meets a receptor, the initial processes might be limited by shape and size, but depend strongly on luctuations. For very small molecules, other factors come into play: For example, for serotonin, the process may be proton transfer, and for scent molecules at olfactory receptors, inelastic electron tunneling is a strong candidate for the critical step. Quantum computing based on condensed matter systems is inherently nanoscale, since quantum entanglement is efective only at the submicron level. Quantum information processing is also inherently dynamic, for manipulations of qubits have to be faster than decoherence (quantum dissipation) mechanisms. Strikingly, quantum information processing and life processes display commonalities in exploiting behavior far from equilibrium. 13-1

13-2

Handbook of Nanophysics: Principles and Methods TABLE 13.1

Characteristic Timescales for Dynamics of Nanoscale Objects

Class Fast: electronic (femtoseconds to picoseconds)

Fairly fast: lattice relaxation, etc. (picoseconds to nanoseconds)

Moderately fast (nanoseconds to microseconds)

Moderate (microseconds to milliseconds)

Relatively slow: milliseconds and longer

Phenomenon Plasmon frequency Electron collision times Electronic excitation creating dynamics Chemically induced dynamics Electron moves 1 nm in a metal Electron (1/40 eV) moves 1 nm in a semiconductor Sound crosses a nanometer scale dot Vibrational energy loss from dot Ballistic motion of electron in a nanotube Intrachain movement of solitons or polarons in trans-polyacetylene Conined vibrational modes in dots Spin dynamics for spintronics or spin-based quantum gates Energy transfer: soliton in α-helix Interchain movement of solitons and polarons in trans-polyacetylene Random dynamics and noise Decoherence times for “good” quantum systems Difusion and other incoherent processes Dynamics of equipment, like STM Dynamics in processing, e.g., scent, sight Molecular motor systems Dynamics of system failure

Typical Timescale ∼0.1 fs ∼0.1 fs ∼fs ∼fs 1–2 fs 10 fs ∼ps Few ps Few ps Few ps ∼ns Ideally ns ∼10–100 ns ∼100 ns Wide variations

Wide variations. Our senses have characteristic times of 1–100 ms

Note: here are many simpliications here, but the range and variety of behaviors is represented.

Almost all scientiically interesting systems, whether biological or physical, change with time at some scale: some time dependence is unavoidable. At the nanoscale, their functionality depends both on the object itself and on its working environment, and also on certain consistencies that have to be achieved. Table 13.1 shows some of the typical timescales. It is oten useful to distinguish between natural and operational timescales (cf. the length scales discussed by Stoneham and Harding 2003). Natural timescales might be deined as the time taken by sound to cross a nanodot, or for spontaneous optical emission at the sum rule limit. Operational timescales are designed and structured to chosen criteria, oten with diiculty. hus, in state-of-the-art microelectronics devices, the structures have sizes determined partly by nature, partly by compatibility with previous generations of device (since reengineering fabrication plants is expensive), and partly by the laws of physics and the art of the possible. he choices of materials and how they are organized are intended to maximize signal speeds, delay memory decay, and keep energy dissipation under control. hese choices have to be compatible and consistent with the need for many sequential steps in the fabrication process. Biological systems have evolved to make operational timescales seem natural. We are gradually learning how such timescales are designed. here is an opportunity to turn scientiic understanding into technological advantage. In this chapter, we discuss just a few of the many time-dependent processes taking place in nanoscale objects. Two systems at the smaller end of the nanoscale are especially interesting. hus, II–VI

(e.g., CdSe) quantum dots of perhaps 200 ions, which show a wealth of time-dependent processes, are oten considered quantally, but can largely be described classically. he other system, which is usually described classically, appears to need a quantum description: how do scent molecules (rarely, if ever, bigger than 100 atoms) provoke receptors and initiate signals that ultimately reach the brain?

13.2 Time-Dependent Behavior and the II–VI Nanodot he term “quantum dot” is used in several diferent ways. here are the “large” quantum dots of silicon or III–V semiconductors, typically containing tens of thousands of atoms. hese dots are central to optoelectronic devices and some variants of quantum computing. hen there are the “small” quantum dots—typically a few hundred atoms of a II–VI semiconductor—which are a couple of nanometers in diameter. hese small dots show varied dynamical features, and only some of these features are understood. We discuss these features mainly to illustrate the diversity of phenomena. We emphasize the point that the nanoscale needs new ways of thinking about what is important.

13.2.1 Growth and What Stops It Microbial synthesis ofers a convenient way to produce industrial amounts of CdS nanodots (Williams et al. 1996). But why do the

13-3

Dynamics at the Nanoscale

dots stop growing and stay nanosized, with sizes as uniform as can be achieved by sophisticated chemical methods? If ice and mushrooms can break up concrete, how can sot biomaterials constrain size when there seems to be a large thermodynamic force that can help them grow? In fact, nature has found many ways to use sot, lexible materials in ways that, at least macroscopically, are associated with stif, rigid structures (Stoneham 2007). Examples include sot templates for the growth of an inorganic crystal with speciic facets and orientations, or the growth of small nanocrystals of controlled size. How can this behavior of “sot” biological materials, including organization, be achieved? Organization has several variants. he irst is organization at the atomic scale, when a particular crystal structure is selected. his selection step may involve a choice of chirality or a choice between structures (e.g., wurtzite versus zincblende). Such selectivity is exploited in the puriication of pharmaceuticals and is also key to the creation of small II–VI quantum dots. A second type of organization is mesoscopic in scale and leads to ordering, oten termed self-organization, though this is only a description and not an explanation. A third type of organization leads to speciic shapes (usually external shape), primarily at the larger mesoscale or the macroscale. he structure may be relatively sot, such as in some cell structures, where topology is crucial, or it may be stif, as in bone or shell. Complex patterns can be generated reproducibly (Meinhardt 1992, Koch and Meinhardt 1994), including periodic patterns of units that have a complex and polar substructure, such as photoreceptor cells in the Drosophila eye. Spatial organization has its own timescales, sometimes related to characteristic length scales, e.g., through a dif usion constant. Restricting growth is an important phenomenon in biology, and the shapes of structures (like shells) determine their function. Sometimes a clever control is used by organisms to exploit DNA’s capabilities. For example, protein cages are crucial in synthesizing magnetic nanoparticles, like single-domain ferrimagnetic particles of Fe3O4 found in magnetotactic bacteria (Klem et al. 2005). he mammalian ferritin structure uses two types of subunit (H, L) that align in antiparallel pairs to form a shell, with narrow (∼3 Å) channels. One set of channels is hydrophobic and the other hydrophilic. Mineralization involves iron oxidation, hydrolysis, nucleation, and growth. he Fe ions enter the cage via the hydrophilic channels, and presumably electrostatics controls their entry and so limits their growth. he outer entrance is a region of positive potential, guiding cations into the cage until the ferritin i lls the internal cavity with some precision. It is possible that similar mechanisms operate in cases like CdS nanoparticle formation in yeasts. Size alone can be controlled in other ways, such as imposing surface nucleation barriers (Frank 1952), limiting materials supply, or capping to block growth sites. Access to a nanodot surface is important in medical applications, and it is found that chaperonin proteins form ATPresponsive barrel-like cages for nanoparticles (Ishli et al. 2003). he distribution of sizes of biologically controlled nanoparticles seems to be at least as good (perhaps 5% variance in radius)

as the best cases in solution chemistry. A 5% variance in radius amounts to a much larger variation in ion number, which is an important factor, in that when even adding a single ion can have important consequences.

13.2.2 Vibrational Spectra of Quantum Dots he smallest ionic dots from molecular beams show crystal structures that are diferent from the bulk form. Partly, this variation in structures can be explained by the presence of large electric ields in such dots. So do the vibrational features of nanoclusters difer qualitatively from the bulk as well? Are there signs of discreteness in the phonon spectra (Stoneham 1965)? Could one i nd modes with frequencies higher than those of the corresponding bulk zone-center LO phonon (Gavartin and Stoneham 2003)? Can we associate these efects, if they exist, with the bulk or the surface, or is there an intimate mixture? 13.2.2.1 Polar Quantum Dots All nanodots—whether ionic, covalent, organic, or metallic— should show efects of coninement. We expect some diferences between the relatively close-packed ionic systems (like NaCl with sixfold coordination) and more open covalent systems (like the fourfold ZnS structure) to show trends in phonon coni nement that are analogous to electron coninement in some ways. here is substantial electron coninement (band gap opening) at the appropriately terminated silicon surface, whereas surface states are found in the band gaps of MgO or NaCl. For surface phonons, ab initio calculations predict a surface band at ∼4 meV above the maximum bulk frequency at the silicon (2 × 1) surface (Fritsch and Pavone 1995, Screbtii et al. 1995), but the (001) surface vibrations of NaCl and MgO do not exceed the energy of the bulk LO phonons. his can be seen from the vibrational dynamics of NaCl and ZnS nanoclusters (Figures 13.1 and 13.2). Cubic NaCl nanocrystals with only (001) type surfaces have a vibrational density of states similar to bulk material. Faceted clusters, with less stable surfaces, show modes with frequencies up to 5 meV above the bulk maximum of 32 meV. he speciic nature of the modes depend on the precise surface termination, but all faceted clusters have both surface-like and bulk-like high-frequency modes. he bulk-like modes should probably be considered as resulting from constructive interference of the surface modes localized near the opposite high index faces of a crystallite, and should eventually disappear in larger nanocrystallites. Figure 13.2 shows the vibrational density of states for the zincblende-structured cluster (ZnS)47 derived from harmonic analysis using density functional theory with an atomic basis set and the PBE density functional, as implemented in the DMol3 code (Delley 2000, Accelrys 2008). he mode observed around 56 meV is well above the largest bulk (LO) phonon of 47.5 meV (Tran et al. 1997), and is in line with results from earlier shell model predictions and plane wave density functional calculations (Stoneham and Gavartin 2007).

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Handbook of Nanophysics: Principles and Methods

ωLO = 32 meV

Vibrational density of states (arb. units)

Na152Cl152 Na146Cl146 0.2

Na140Cl140 0.1

Na216Cl216

Na108Cl108 Bulk NaCl 0

0

10

20

30 Energy (meV)

40

50

60

FIGURE 13.1 Vibrational densities of states of selected NaCl nanocrystals calculated using shell model as implemented in Gulp program (Gale and Rohl 2003, Accelrys 2008). Cubic nanocrystals (NaCl)108 and (NaCl)216 have no vibrations with frequencies higher than the bulk ωLO = 32 meV (vertical line), while the faceted clusters (NaCl)140, (NaCl)146, and (NaCl)152 display high frequency tails. (Based on Stoneham, A.M. and Gavartin, J.L., Mater. Sci. Eng. C, 27, 972, 2007.)

Clearly, modes with frequencies higher than the largest (longitudinal optic) bulk frequencies exist at least in some stable nanoparticles. More work is needed to decide how universal this phenomenon is for small nanodots. More important is the unresolved question of how strongly such vibrations couple to electronic excitations. he standard view of electron–phonon coupling suggests that the dominant coupling in ZnS would be with the LO modes around 47 meV. Calculations predict that the higher frequency modes are infrared active, and may couple strongly to the electronic excitations. Further analysis reveals that high-frequency modes are strongly localized at the surface. hus, the doubly degenerate highest frequency is associated with the in-plane optical vibration on two faces of the nanoparticle, as indicated in Figure 13.2. Intriguingly, the infrared spectra reported in the igure contrast strongly with our previous analysis of the electron–phonon interaction based on the dynamics of single-particle levels (Gavartin and Shluger 2006, Stoneham and Gavartin 2007), predicting strong electron interaction with much soter modes. Although the rigorous studies of electron–phonon coupling are in their infancy, they imply strongly that the origin of electron–phonon coupling in a nanocrystal is radically diferent from that in the bulk material. h is would have major implications on dynamics of self-trapping, in which a carrier localizes as a result of the electron–phonon coupling. 13.2.2.2 Metallic Quantum Dots Just as quantum dots of polar materials show features diferent from the bulk, so do metallic nanocrystals. Figure 13.3 shows the vibrational density of states of a Pt116 cluster obtained from

700 ωLO = 47.5 meV

0.06

500

ωmax(X) = 150 cm–1

400 300 200 100 0

0

10

20

30 40 50 Frequency, ω (cm–1)

60

70

FIGURE 13.2 Vibrational density of states of the (ZnS)47 cluster (black) obtained from the harmonic analysis using ab initio density functional theory with an atomic basis set and the PBE density functional as implemented in the DMol3 program (Delley 2000, Accelrys 2008). he same spectrum weighted with infrared intensities is shown in gray. Maximum frequency in the bulk ZnS, ωLO, is indicated by a vertical line. Highlighted are two equivalent faces containing four sulfur and two Zn atoms, on which the highest frequency vibration is localized.

Vibrational density of states (arb. units)

Vibrational density of states (arb. units)

600

0.05

0.04

0.03

0.02

0.01

0

0

50

100 Frequency, ω (cm–1)

150

200

FIGURE 13.3 Vibrational density of states of the Pt116 cluster obtained from the harmonic analysis using embedded atomic potentials due to Sutton and Chen (1990). he vertical line corresponds to the maximum bulk frequency for the same potentials.

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Dynamics at the Nanoscale

harmonic analysis using the embedded atomic potentials of Sutton and Chen (1990) and GULP code (Gale and Rohl 2003, Accelrys 2008). A signiicant number of vibrations are predicted with frequencies above the maximum bulk frequency (the X-phonon, shown as a vertical line). he maximum frequency in the bulk fcc Pt corresponds to the X-point phonon measured at ∼190 cm−1. Although the force ield parameters used in this study predict a somewhat lower frequency of 150 cm−1, similar uncertainty is expected in a cluster vibrational analysis. he highest frequency in the Pt116 cluster is calculated as 190 cm−1 and corresponds to an isotropic breathing. For metal nanodots, which are a major interest for solar collectors and some biomedical applications, the important property is absorption of energy from incident photons. For a dot of 100 atoms, the absorption of a 2 eV photon would give an energy equivalent to about 232°C. Similar temperature rises may occur during catalysis of exothermic reactions. So it is natural to be curious about the process and dynamics of melting. In addition, the melting of small isolated clusters reveals many aspects of nanosystems, and standard thermodynamic considerations that are used to explain them need to be modiied. Fundamentally, thermodynamic quantities represent ensemble averages, which are independent of the ensemble for very large systems. h is is not generally true for the i nite nanoscale systems, like isolated clusters (microcanonical ensemble) and clusters implanted in the bulk or deposited on a surface (canonical ensemble), which may behave qualitatively diferently. A somewhat related issue concerns the ergodic hypothesis that thermodynamic quantities are the same whether they are obtained by the ensemble average or a time average over the evolution of a single system. Many nanosystems, especially those that can be considered isolated, are essentially nonergodic. he nature of averaging for these systems is dei ned by experiment design. hus, there may be systematic diferences between the same characteristics measured as an ensemble average and as a time average. A cluster’s temperature is one of its most fundamental characteristics. For an isolated cluster, a temperature T1 can be dei ned as the average kinetic energy per particle, that is,

3N kBT1 = 2

∑ i ,α

mi (v0, α 2 − viα 2 ) 2

⎛ ∂E ⎞ T2 = ⎜ ⎟ ⎝ ∂S ⎠ V his relects on the general observation that measurements of cluster temperature will generally depend on the experimental probe (Makarov 2008). Some small metallic clusters have been observed to exhibit a negative heat capacity near a phase transition: they cool down when they are heated (Roduner 2006, Makarov 2008 and references therein). Technically, this violates the second law of thermodynamics as usually given, exposing limits of its applicability in small isolated systems. We have already noted the increased role of luctuations in small systems, which indicates that thermodynamic averages do not capture all essential physics of the process, even at equilibrium. Figure 13.4 shows a 6214 atom Pt cluster, both solid and at least partly molten as modeled using microcanonical molecular dynamics with embedded atom potentials (Sutton and Chen 1990) implemented in GULP package (Gale and Rohl 2003, Accelrys 2008). Both the cut through the center, which shows a crystalline core, and the root mean square atomic displacements show a liquid outer layer and a solid core, rather well separated by a boundary of about one atomic diameter. Melting irst occurs at the surface at a lower temperature than for the bulk. here is a critical cluster size at which energy luctuations are of the same order as the latent heat between two phases. Below this size, no phase separation is possible, though two phases may be present dynamically as a superposition. Above the critical size, the luctuation correlation length is smaller than the cluster size, and the cluster behaves as a “big” material. In our example, this 6 nm Pt nanoparticle is still remarkably free from nano features, though both its melting temperature Tm and speciic latent heat may be still lower than that of the bulk material. his cluster is also incredibly thermodynamic, even in microcanonical regime, in the sense that detailed equipartition of energy between various degrees of freedom is preserved. Liquid shell–solid core structures are common in isolated metallic clusters (Ferrando et al. 2008). However, this behavior may be reversed in molecular or semiconductor clusters and in clusters embedded in another material (Roduner 2006).

13.2.3 Dynamics and Nanocrystal Structure t

where i runs over all particles in the cluster (N) α runs over three Cartesian coordinates v0,α represents the velocity of the center-of-mass; an average is then taken over the time evolution of the cluster Jellinek and Goldberg (2000) noticed that for very small isolated clusters, T1 is diferent from the temperature T2 deined thermodynamically from the following equation:

Some remarkable observations (Bufat 2003) show that the electron dif raction peak for an individual dot, even one like Au, apparently switches of for periods of a few seconds or longer. Why this happens is still not known, but there are several relevant time-dependent processes. he irst model simply involves dot rotation. his seems credible in a sot matrix, like a polymer, when rotation is easy or on a surface. But it is hard to see how such rotation could work for systems like as CdS in a rigid SiO2 matrix, even though sot rotation and cage modes below 5 meV have been predicted in the molecular dynamics modeling of ZnS in a SiO2 matrix (Stoneham and Gavartin 2007; see Figure 13.5). Even with sot

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Handbook of Nanophysics: Principles and Methods

(a)

(b) 14

1/2 (A)

12

= 1345 K

10 8 6 4 2 0 8

1/2 (A)

= 1229 K 6 4 2 0

0

5

10

(c)

15 -Ro (A)

20

25

30

FIGURE 13.4 (a) Comparison of a solid cluster of 6214 Pt atoms at 439 and 1229 K, when it has melted, at least in part. (b) A cut through the middle of the molten cluster, indicating quasi-solid core atoms (dark gray) that keep their crystalline arrangement, whereas surface atoms (light gray) move rapidly within the melted region. (c) Root mean square atomic displacements for all particles in the cluster plotted against their average distance from the cluster’s center of mass at T = 1229 K (solid core, liquid surface) and T = 1345 K (liquid cluster throughout). he solid/liquid boundary at T = 1229 K is just about one interatomic distance thick.

FIGURE 13.5 (See color insert following page 25-16.) Atomistic model of the (ZnS)47 cluster embedded into a-SiO2 matrix. Detailed examination of the dynamics identiies six low-frequency modes (three rotational and three cage modes, schematically shown) with energies below 5 meV. (Based on Stoneham, A.M. and Gavartin, J.L., Mater. Sci. Eng. C, 27, 972, 2007.)

rotational modes, it is diicult to identify the forces that drive rotation. Heating and thermal expansion do not readily cause rotation. It is possible to use such models to study heat transfer between a hot dot and a cool matrix, and calculations show that vibrational coherence across the boundary can be one of the factors in the energy transfer across the boundary. he second possibility might involve photochemical efects on adsorbed species (e.g., H2O or C oxidation) for a dot on a substrate. If there is some well-deined asymmetry, the dot may rotate, possibly because reaction products leaving the surface transfer momentum to the dot. he third model supposes melting or quasimelting (see Section 13.2.2) in which there is melting only on an outer surface or the interfacial layer, with an unmelted core. If so, the dif raction peak should not disappear, rather it might drop in intensity. Asymmetric (local) melting might cause rotation, as in the second model, though the dif raction pattern is expected to streak before it vanishes in a liquid. Also an acoustic (thermal) mismatch between dot and host should be important: big diferences between densities or elastic constants will keep

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Dynamics at the Nanoscale

the dot hot for longer, with a dependence on the geometric match of dot and matrix structures. he switch-of time should depend on the excitation rate. Melting could happen in metallic dots, as sometimes observed, as well as in semiconducting or insulating ones. he fourth model, not relevant for metals, presumes a change of geometry driven by charge transfer. hus, (Stoneham and Harker 1999, unpublished) the electron beam causes charge transfer within the (nonmetallic) dot, analogous to some of the charge transfers inferred from spectroscopy. his shit of charge causes ionic polarization within the dot, afecting the dif raction peak. Essentially, the charge transfer transition takes the dot into a metastable state that could survive for a reasonable amount of time. Simple molecular dynamic models show that this process should work for very small dots of a few tens of ions. Structural changes are observed even for lower energy (subband gap) optical excitations (Itoh and Stoneham 2001, Stoneham 2003b). A 2.33 eV light causes an orthorhombic to cubic transformation in CdS (Yakovlev et al. 2000). When ionization of the nanoparticle occurs, as in some molecular beam experiments, a Coulomb explosion can be observed. For a typical “Coulomb explosion,” the presence of two holes and less than some critical number of atoms, roughly 20 molecular units for NaI, 30 Pb atoms, or 52 Xe atoms, are observed (Sattler et al. 1981).

13.2.4 Intermittency and Luminescence Ensembles of nanoparticles under continuous excitation behave much as expected. hey exhibit steady luorescence whose intensity decays in time as the excitation ceases. Experiments on individual nanoparticles reveal unexpected and intriguing jumps in luorescence intensity. he particle ceases to luminesce for a period of seconds and then returns to the on-state. Such blinking is observed in single molecules, polymers, and proteins, as well as in semiconductor nanoparticles, nanorods, and nanowires (Frantsuzov et al. 2008). he spectroscopy of II–VI quantum dots lies outside the scope of our discussion of dynamics. However, we need to recall that the small stoichiometric II–VI dots (such as the (ZnS)47 dots discussed by Gavartin and Stoneham 2003) do have spherical symmetry: virtually all charge-neutral dots with a zincblende structure have a dipole moment. Experimental spectroscopy, however, gives insight into the dynamical processes and their rates. Many studies of II–VI dots (e.g., Delerue et al. 1995, Nirmal et al. 1995, Klimov et al. 1999) show intermittency. he dark periods have characteristic statistical recurrence periods, which are linked somehow to the statistical shits with time of the luminescence energy. Structural intermittency (dif raction) and intermittency in luminescence seem to be two separate phenomena. The common explanation for intermittent luminescence resides in an Auger process. Double excitation of a dot (producing 2e + 2h) with recombination of one electron–hole pair can excite an electron into the surrounding matrix, leaving

a charged dot that has different luminescence behavior from the original neutral one. The dot appears dark until an electron is captured. Looking at the stochastic energy shifts and assuming that these are associated with trapped electrons in the matrix, it seems that these trapped electrons must be very close to the dot–matrix interface. Such changes may damage the nanocrystal irreversibly (Blanton et al. 1996). The behavior can be more complex, for example, Hess et al. (2001) found evidence for a metastable dark state (possibly involving a surface transformation) on heating dots in a solution or by changing the dot environment in other ways, making recovery possible with illumination. Light possessing above the band gap energy causes a dark to bright transformation. Without such light, the dot may remain dark for months, whereas the bright to dark transformation can be fast, perhaps in a few seconds. Heyes et al. (2007) ind good experimental support for a model of Frantsuzov and Marcus (2005) in their work on CdSe/ ZnS core shell dots. Frantsuzov and Marcus suggest, in line with the ideas above, that ater photoinduced creation of an electron– hole pair, the hole is trapped in a deep surface state of the CdSe core, which is excited by energy from an Auger process. he key energy interval results in a stochastic dif usion, moving in and out of resonance with hole state energy gaps. Heyes et al. suggest that this model explains the power-law behavior of on/of time distributions, the observed exponential cutof of powerlaw dependence at long “on” times, and the lack of dependence of blinking kinetics on shell thickness. It also explains why the overall quantum yield observed is governed by the fraction of nonemitting particles in the sample.

13.3 Cycles of Excitation and Luminescence Optical excitation and de-excitation cycles involve several natural timescales. Optical excitation depends on the optical system and its intensity, and is largely under experimental control. here are natural timescales following excitation that determine operational timescales according to what it is we wish to do, e.g., to provide picosecond optical switch or exploit the altered refractive index (polarizability) in the excited state. here are several distinct types of subsequent relaxation processes. First, charge redistribution on excitation changes forces on the ions. he system must relax to eliminate surface shear stresses, as vacuum cannot support shear. his (Stoneham and McKinnon 1998) takes a few picoseconds, about the time taken for an acoustic pulse to cross the particle (Itoh and Stoneham 2001 gives an alternative estimate of this timescale). A consequence of this relaxation process is a dynamic dilation: the volume change is roughly independent of dot size, so the fractional change (dilational strain) is inversely proportional to dot volume. his strain, and hence energy shits as a result of

13-8

deformation potential coupling, are inversely proportional to dot volume and can be signiicant. Eliminating shear stress does not need energy redistribution, but involves mainly changing the mean atomic positions about which the system oscillates. he dipole moment is reduced in the excited state (Stoneham and Gavartin 2007) as the electron associates with the more positive regions and the hole with the more negative regions. Energy redistribution is a second stage. “Cooling” processes (loss of energy from coherent motion in the coniguration coordinate) compete with luminescence, nonradiative transitions, and further possible electronic transitions, such as those into so-called dark states.

13.3.1 Optical Excitation Cycle: Cooling We should distinguish two types of cooling following excitation. One type of cooling establishes equilibrium among the different vibrational modes of the dot itself. he other type takes energy from the dot as a whole, as the dot equilibrates with its surrounding matrix. Slower cooling is expected for dots resting on a substrate than for those embedded in a matrix, simply because of lower thermal contact. Even if a phonon temperature is established within a dot, it may difer from that of the surroundings, as in the spatial phonon bottleneck discussed by Eisenstein (1951). As noted above, the amount of energy can be quite large: a 2 eV photon absorbed by a dot of 100 atoms can give added energy per atom up to a temperature rise of 232°C. As a result, some modes are more strongly excited (higher efective temperature) than others. Even when light is emitted, there will be some cooling in the excited state before emission, and in the ground state ater emission. In a dot, the phonon system may equilibrate only slowly, i.e., exhibit a spectral bottleneck as energy is exchanged with what is called the coniguration coordinate, in analogy with color center studies. he coniguration coordinate is a reaction coordinate, not usually a normal mode (see Itoh and Stoneham 2001, p. 90), and it describes the vibrational relaxation toward equilibrium associated with coupling to the excitation. his gives a second class of cooling, largely internal to the dot. Experimentally, hot luminescence can be identiied (Tittel et al. 1997, Stoneham 1999, unpublished), since the luminescence spectrum looks like a zero-phonon line of energy ħω0 with sidebands. Suppose we describe the dot vibronic behavior with a coniguration coordinate diagram, the ground state having a characteristic vibration frequency ωg and the excited state a frequency ωx. Emission occurs from excited electronic states with nx phonons (using the word “phonon” for clarity, even though we do not strictly have a normal mode) to the ground electronic state with ng phonons. his luminescent transition now has the energy ħω0 + nxħωx − ngħωg. Energies lower than ħω0 correspond to transitions that result in a vibrationally excited ground state; energies higher than ε0 correspond to transitions from vibrationally excited initial states, i.e., hot luminescence. he relative importance of hot luminescence gives a measure of the transient temperature of the dot.

Handbook of Nanophysics: Principles and Methods

Analysis of data for small CdS dots (Stoneham 1999, unpublished) supports this description. Unreined analysis of the sideband structure suggests a ground state phonon energy of ∼32 meV, with the higher value ∼35 meV in the excited state; both energies are fairly close to the 40 meV bulk LO phonon energy. he degree of thermal excitation at the time of luminescence is consistent with an energy input proportional to laser intensity, and with cooling at an independent rate, so the dots did not cool instantly to the matrix temperature. Nonoptimized analysis suggests temperature rises of the order 100°C. he zero phonon line has contributions from all components with nx = ng, and hence there is broadening and an energy shit as diferent components become important. In this case, this part of the shit would be to the blue line, as ħωx > ħωg; in addition, there is a red shit from thermal expansion, which dominates in these data. he Huang–Rhys model (Huang and Rhys 1950) also predicts changes in sideband intensities (see, e.g., Stoneham (1975) and Chapter 10 for the relevant formulae).

13.3.2 Electron–Phonon Coupling and Huang–Rhys Factors For the data just described, the Huang–Rhys factors would be of the order 0.1–0.5, similar to other published data (Woggon 1997). hus a typical Stokes shit might be ∼0.1 eV, in line with a Huang–Rhys factor of 0.3 or so. We stress that this analysis makes no assumptions about the nature of the electronic excited state, whether efective mass or charge transfer states. here are various predictions of Huang–Rhys factor S as a function of dot radius, mostly for very simple initial and inal wave functions, and bulk-like lattice vibrations and electron–phonon couplings (e.g., Fedorov and Baranov 1996). Few workers (such as Vasilevskiy’s (2002) treatment of dipolar vibration modes) recognize the subtle but signiicant changes at the nanoscale, partly because of the boundary conditions. Fröhlich coupling to bulk-like longitudinal optic modes is an assumption, as is the neglect of deformation potential and piezoelectric couplings to acoustic modes. Simple analytical calculations can be generalized (Ridley et al. 2002, unpublished, following Ridley 2000 and Stoneham 1979). hese show S to depend on the form factors of the initial and inal electronic states. An important distinction arises between states for which the boundary determines the wave function dimensions (e.g., when the exciton radius exceeds the dot radius) and those for which a local interaction is dominant (e.g., a deep defect). S also depends on the wavevector dependence of the electron–phonon coupling. In the most useful cases (unscreened piezoelectric coupling, small dot radius R), the dependences are roughly S ∼ 1/R (Frohlich), 1/R2 (deformation potential), and R0 (piezoelectric). Depending on details, any one of these dependences can dominate. So, when resonant Raman data suggest S ∼ 1/R (e.g., Baranov et al. 1997) and photoluminescence data likewise (CuCl dots in glass (Itoh et al. 1995) and CuBr (Inoue et al. 1996) ), there could be several interpretations. As yet, there are no calculations of Huang–Rhys factors at the level of the analysis discussed in Section 13.2.2.

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Dynamics at the Nanoscale

he magnitude of the Huang–Rhys factor is sensitive to the boundary conditions. First-principles electronic structure calculations of the (ZnS)47 cluster in vacuum (Figure 13.2) give rather similar ground and excited (triplet) state relaxation energies of 80 and 110 meV, respectively; hence a Stokes shit of ∼190 meV. Given the bulk LO phonon energy of ∼48 meV, one obtains S ∼ 2, i.e., intermediate rather than weak coupling (Yofe 2001). he hole component of the exciton in the (ZnS)47 cluster of Figure 13.2 is strongly localized at the surface (Stoneham and Gavartin 2007), and so the environment surely afects exciton relaxation and the Huang–Rhys factor.

13.4 Where the Quantum Enters: Exploiting Spins and Excited States We turn to an example of electron and spin dynamics that is intrinsically nanoscale. Our example is one route to the storage and manipulation of quantum information for quantum information processing. he underlying processes of the Stoneham– Fisher–Greenland proposal (SFG; Stoneham et al. 2003) speciically exploit properties of impurities in silicon or siliconcompatible hosts. Electron spins, used as qubits, are distributed randomly in space such that mutual interactions are small in the normal (ground) state when they store quantum information. In an electronic excited state, entangling interactions between qubits allow manipulation of pairs of qubits by magnetic ields and optical pulses. So what does this illustrate with regard to dynamics at the nanoscale? First, quantum information processing needs dynamic and coherent manipulation of the spins: all the quantum manipulations must be done faster than decoherence processes. In the SFG approach, decoherence arises primarily from spontaneous emission, photoionization, spin lattice relaxation, and loss of quantum information to nonparticipating spins. Secondly, a characteristic range over which it is possible to entangle two spins exists. Donors in their ground states should be too far apart to interact, yet an excited control electron must overlap two qubits through a shaped optical pulse to give a transient interaction. hese constraints give a length scale ∼10 nm. However, the wavelength of light (say 1000 nm, or 1 μm) is so long that one cannot focus on just one chosen pair of qubits. he laser system can focus on (say) one square micron. To address individual gates, the use of both spatial and spectroscopic selectivity is needed. he natural disorder and spatial randomness in doped semiconductors is crucial, and even the steps of the silicon surface are useful. Simply because the spacings of the donors and control dopants are random, the excitations to manipulate qubits will have diferent energies from one qubit pair to another. Randomness is beneicial. hese ideas put a limit on the number of qubits in one square micron that can be linked from the spectral bandwidth available. With sensible values, this would be about 20 qubits. his would enable a linking of, say, 250 qubits. Can this be done? Imagine “patches” of, say, 20 gates in a small zone (say 100 nm) of each micron-sized region. Can quantum

information be transferred from one patch to another as a “lying qubit”? If practical—and there are proposals—then a linked set of say 12 patches, each containing 20 qubits, would give 240 qubits. he architecture would, however, have implications for eicient algorithms. If there is to be widespread public use of quantum information processing, the room-temperature processor will have to work alongside conventional classical devices. Any quantum information processor will be controlled by classical microelectronic devices. So the quantum device must link well with the silicon technology that dominates current information processing. Classical silicon technology continues to evolve in a truly impressive way. It will not be replaced by quantum information processing. Instead, quantum behavior will extend its possibilities. here are strong reasons to look for silicon-based quantum information processors, like the SFG scheme. he optically controlled SFG quantum gates do not rely on small energy scales, so might function at or near room temperature, if decoherence mechanisms permit. Quantum behavior is not intrinsically a low-temperature phenomenon, as we emphasize in Section 13.5. Quantum behavior is displayed in two main ways. In quantum statistics, the quantal ħ appears in combinations like ħω/kT, so high temperatures make quantal efects less and less evident. But statistics relate primarily refer to equilibrium behavior. In quantum dynamics, ħ appears without T, and the quantum role may be to open new channels. Quantum information processing relies on dynamics and staying far from equilibrium. here is no intrinsic problem with high temperatures. Practical issues may be another matter, of course, since the rate of approach to equilibrium tends to be faster at higher temperatures.

13.5 Scent Molecule: Nasal Receptor Nanoscience encompasses both physical and biological systems. Our example shows behavior that combines the nanoscale and quantum efects in a biological system at ambient temperatures. In many life processes, molecules interact with highly speciic and selective receptors. he actuation of these receptors initiates important biophysical phenomena. he molecules might be small molecules, neurotransmitters, like NO or serotonin or steroids, or large molecules, like many enzymes. For larger molecules, shape (in some general sense, including distribution of adhesive patches) is a major factor. It is almost a mantra that there is a “lock and key” mechanism in which shape is the only signiicant factor in selectivity, despite lack of clarity about the activation step (the key needs to be turned in a human-scale lock). For small molecules, while shape may be necessary, it is manifestly not suficient. Some extra feature is needed to understand what actuates the receptor once the molecule has arrived. One idea (Stoneham 2003a, unpublished) is a “swipe card” model: your human scale swipe card (credit card or keycard) has to it well enough, but it is something other than shape (oten in the magnetic strip for swipe cards) that transfers information and actuates the system. In the swipe card model, there is a natural actuation event, e.g., electron or proton transfer. At the molecular scale, it might

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Handbook of Nanophysics: Principles and Methods

be proton transfer (as seems likely for serotonin, Wallace et al. 1993), or inelastic electron tunneling for scent molecules, as suggested by Turin (1996). So what would be the processes in Turin’s model of olfaction (Brookes et al. 2007)? Scent molecules have to be volatile, and so are small, rarely more than 50 atoms in size, and clearly nanoscale. Each molecule may interact with a number of diferent receptors, from whose signals the brain discerns a particular scent. Shape alone is inadequate to explain the existence of olfactants that are structurally essentially identical, yet smell diferent (e.g, ferrocene smells spicy, whereas nickelocene has an oily chemical smell). Further, olfactants that smell the same can be quite diferent in shape. Turin realized that olfactants that smell the same, even if chemically very diferent (e.g., decaborane and hydrogen sulide), have similar vibrational frequencies, and made the imaginative proposal that nasal receptors might exploit inelastic tunneling to recognize diferent vibrational frequencies. hus, a receptor might have a donor component and an acceptor component (Figure 13.6a). Without the olfactant molecule, no tunneling occurs, partly because the tunneling distance is too large and partly because of energy conservation, as the energies do not match. With an olfactant present (Figure 13.6b), inelastic tunneling conserves energy by exciting an odorant vibration of deinite energy (Figure 13.6c); there is still no elastic channel

that conserves energy. his simpliied outline of a sequence of processes has been analyzed in a quantitative model by Brookes et al. (2007). Some of these ideas can be checked by full-scale electronic structure calculations on the small olfactant molecule itself. Receptor structures are not known with any certainty unfortunately, certainly not to better than ∼2 Å, whereas tunneling may be sensitive to changes of 0.1 Å. However, there are well-deined constraints, such as the time between exposure to an odorant and its detection, and there is also information from other biomolecules. Turin’s model needs no special electronic resonances of receptor and molecule. Brookes et al. showed that there is nothing unphysical in the model, i.e., the Turin model should work with sensible values of all parameters, and that it was robust, in the sense that there was quite a range of parameters that would work. heir detailed analysis suggests interesting features of the receptor that warrant further attention and experiments. here are various clear challenges to the Turin theory. Shouldn’t there be an isotope efect, as changing H for D would alter frequencies? h is is still controversial. Some authors say there is no diference; others say that humans, dogs, and rats can discern isotope diferences. here are experimental diiculties as well, since there can be isotope exchange and other isotoperelated reactions in the nose, and the deinitive experiment has

RA D A RD e– (a)

(b)

e–

(c)

(d)

FIGURE 13.6 Schematic illustration of the Turin mechanism. (a) he olfactory receptor, a barrel structure formed from polypeptide chains. Inelastic tunneling occurs between donor D and acceptor A. he two “reservoirs” RD and RA ensure that there is an electron on D and that the electron is removed ater tunneling to A. (b) he scent molecule enters the receptor, deforming it. (c) Inelastic electron tunneling occurs with the excitation of a vibration of the scent molecule. (d) he scent molecule leaves and the system re-initializes. (Based on Brookes, J.C. et al., Phys. Rev. Lett., 98, 038101, 2007.)

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Dynamics at the Nanoscale

not been done. Shouldn’t enantiomers (chiral odorants with letand right-handed forms) smell the same, since their vibrations are the same (whereas shape theories would say all should smell diferent)? Experimentally, the extensive Leingwell (2001) lists suggest about half such pairs smell the same, and about half smell diferent. Within the Turin picture, those that smell diferent do so because there are diferent intensities from let- and righthanded forms, and these diferent intensities are determined in part by shape factors. A detailed analysis (Brookes et al. 2009) shows, surprisingly, that enantiomer pairs of molecules that are dynamically lexible (exploring char, boat, and twist geometries at room temperature) can be distinguished, whereas rigid ones cannot be. his result is surprising, since one might expect lexible molecules could wriggle into receptors an enable let- and right-handed forms to smell the same. he whole story is not yet clear. Interestingly, many of the processes (electron transport, electron tunneling) are relatively slow compared with the time to discern a scent, no faster than a millisecond. But all involve dynamics at the nanoscale. Indeed, the swipe card description— which is a new paradigm for receptor processes, with possibly very wide application—is naturally dynamic and nanoscale.

13.6 Conclusions Behavior at the nanoscale presents some generic challenges (Stoneham 2003a,b). he irst challenge is to identify just what are the most important scientiic ingredients. he temptation is to assume that the signiicant questions are the familiar questions. he second challenge is how to bring together a mix of computerbased, analytical, and statistical theories to address these key issues. he temptation for those used to macroscopic theory is to believe nanoscience is miniaturized macroscience; for those used to the atomic scale, the temptation is to believe that it sufices to extend familiar atomistic ideas. he third challenge is how to understand the link between structure and performance. he temptation is to believe that structures that look alike will actually behave alike, when even one extra atom can make a difference. But perhaps the fourth challenge is the most important: process is more signiicant than structure. Structures are not validated by appearance alone, but by how they perform. Knowledge of ground-state energies for idealized systems, crystal structures, and surface reconstructions is only a beginning. Dynamics is an unavoidable ingredient at the nanoscale, whether the movement is electronic, a near-equilibrium luctuation, or a subtle biological process. Our examples have aimed to illustrate the range of dynamic phenomena and, in particular, to identify cases where there are surprises. If we were to identify themes that we regard as especially important in the next stages of nanoscale science, then we would note four personal choices. he irst theme involves the ways in which living organisms exploit hard and sot matter with such ingenuity. Our example of olfaction attempts to understand one example of a remarkable biological phenomenon. A second theme might be the exploitation of selective electronic excitation: the use of spatial and spectral resolutions together for low

thermal budget nanoprocessing, as well as for quantum information processing. A third theme is the signiicance of coherence, whether vibrational, electronic, or quantum. he inal theme, and the main thrust of this paper, is the need to recognize that, at the nanoscale, dynamics rather than structure dominates behavior.

Acknowledgments We gratefully acknowledge comments, suggestions, and practical assistance of our colleagues Gabriel Aeppli, Polina Bayvel, Ian Boyd, Jenny Brookes, Mike Burt, Andrew Fisher, hornton Greenland, Tony Harker, Filio Hartoutsiou, Sandrine Heutz, Andrew Horsield, Christoph Renner, Brian Ridley, and Luca Turin. his work was funded in part through EPSRC grants GR/ S23506 and GR/M67865EP69 and the IRC in Nanotechnology.

References Accelrys. 2008. Accelrys: DMol3 and GULP Is a Part of Materials Studio Environment. San Diego, CA: Accelrys Inc. Baranov A V, S Yamauchi, and Y Masumoto. 1997. Exciton–LOphonon interaction in CuCl spherical quantum dots studied by resonant hyper-Raman spectroscopy. Phys. Rev. B 56: 10332–10337. Blanton S A, M A Hines, and P Guyot-Sionnest. 1996. Photoluminescence wandering in single CdSe nanocrystals. Appl. Phys. Lett. 69: 3905–3907. Brookes J C, F Hartoutsiou, A Horsield, and A M Stoneham. 2007. Can humans recognize odor by phonon assisted tunneling? Phys. Rev. Lett. 98: 038101. Brookes J C, A Horsield, and A M Stoneham. 2009. Odour character diferences for enantiomers correlate with molecular lexibility. J. R. Soc.: Interface 5 10.1098/rsif.2008.0165 (print version 2009, 6: 75–86). Bufat P. 2003. Dynamical behaviour of nanocrystals in transmission electron microscopy: Size, temperature or irradiation efects. Phil. Trans. R. Soc. Lond. A 361: 291. Delerue C, M Lannoo, G Allan, E Martin, I Mihalcescu, J C Vial, R Romestain, F Muller, and A Bsiesy. 1995. Auger and Coulomb charging efects in semiconductor nanocrystallites. Phys. Rev. Lett. 75: 2228–2231. Delley B. 2000. From molecule to solids with DMol3 approach. J. Chem. Phys. 113: 7756–7764. Eisenstein J. 1951. Size and thermal conductivity efects in paramagnetic relaxation. Phys. Rev. 84: 548–550. Fedorov A V and A V Baranov. 1996. Sov. Phys. JETP 83: 610. Ferrando R, J Jellinek, and R L Johnston. 2008. Nanoalloys: From theory to applications of alloy clusters and nanoparticles. Chem. Rev. 108: 845–910. Frank, F C. 1952. Crystal growth and dislocations. Adv. Phys. 1: 91–109. Frantsuzov P and R A Marcus. 2005. Explanation of quantum dot blinking without the long-lived trap hypothesis. Phys. Rev. B 72: 155321.

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Frantsuzov P, M Kuno, B Janko, and R A Marcus. 2008. Universal emission intermittency in quantum dots, nanorods and nanowires. Nat. Phys. 4: 519–522. Fritsch J and P Pavone. 1995. Ab initio calculation of the structure, electronic states, and the phonon dispersion of the Si(100) surface. Surf. Sci. 344: 159–173. Gale, J D and A L Rohl. 2003. he General Utility Lattice Program (GULP). Mol. Simul., 29: 291–341. Gavartin J L and A L Shluger. 2006. Ab initio modeling of electronphonon coupling in high-k dielectrics. Phys. Status Solidi (C) 3: 3382–3385. Gavartin J L and A M Stoneham. 2003. Quantum dots as dynamical systems. Phil. Trans. R. Soc. Lond. A 361: 275–290. Hess B C, I G Okhrimenko, R C Davis, B C Stevens, Q A Schlulzke, K C Wright, C D Bass, C D Evans, and S L Summers. 2001. Surface transformation and photoinduced recovery in CdSe nanocrystals. Phys. Rev. Lett. 86: 3132–3135. Heyes C D, A Yu Kobitski, V V Breus, and G U Nienhaus. 2007. Efect of the shell on the blinking statistics of core-shell quantum dots: A single-particle luorescence study. Phys. Rev. B 75: 125431. Huang K and A Rhys. 1950. heory of light absorption and nonradiative transitions in F-centres. Proc. R. Soc. Lond. Ser. A 204: 406–423. Inoue K, A Yamanaka, K Toba, A V Baranov, A A Onushchenko, and A V Fedorov. 1996. Anomalous features of resonant hyper-Raman scattering in CuBr quantum dots: Evidence of exciton-phonon-coupled states similar to molecules. Phys. Rev. B 54: R8321–R8324. Ishli D, K Kinbara, Y Ishida, N Ishil, M Okochi, M Yohda, and T Alda. 2003. Chaperonin-mediated stabilization and ATPtriggered release of semiconductor nanoparticles. Nature 423: 629–632. Itoh N and A M Stoneham. 2001. Materials Modiication by Electronic Excitation. Cambridge, U.K.: Cambridge University Press. Itoh T, M Nishijima, A I Ekimov, C Gourdon, A L Efros, and M Rosen. 1995. Polaron and exciton-phonon complexes in CuCl nanocrystals. Phys. Rev. Lett. 74: 1645–1648. Jellinek, J and A Goldberg. 2000. On the temperature, equipartition, degrees of freedom, and inite size efects: Application to aluminium clusters. J. Chem. Phys. 113: 2570–2582. Klem M T, M Young, and T Douglas. 2005. Biomimetic magnetic nanoparticles. Mater. Today 8: 28, doi:10.1016/S13697021(05)71078-6. Klimov V I, Ch J Schwarz, D W McBranch, C A Leatherdale, and M G Bawendi. 1999. Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals: Implications for quantum-dot lasers. Phys. Rev. B 60: R2177–R2180. Koch A J and H Meinhardt. 1994. Biological pattern formation: From basic mechanisms to complex structures. Rev. Mod. Phys. 66: 1481–1507. Leingwell J C. 2001. Leingwell Reports. Leingwell Reports 5: 1. Available: http://www.leingwell.com/ Makarov G N. 2008 Cluster temperature. Methods for its measurement and stabilization. Physics Uspekhi 51: 319–353.

Handbook of Nanophysics: Principles and Methods

Meinhardt H. 1992. Pattern formation in biology: A comparison of models and experiments. Rep. Prog. Phys. 55: 797–850. Nirmal M, D J Norris, M Kuno, and M G Bawendi, Al L Efros, and M Rosen. 1995. Observation of the “Dark Exciton” in CdSe quantum dots. Phys. Rev. Lett. 75: 3728–3731. Ridley B K. 2000. Quantum Processes in Semiconductors. Oxford, U.K.: Oxford University Press. Ridley B K, A M Stoneham, and J L Gavartin. 2002. Unpublished. Roduner E. 2006. Size Dependent Phenomena. Cambridge, U.K.: he Royal Society of Chemistry. Sattler K, J Mühlbach, O Echt, P Pfau, and E Recknagel. 1981. Evidence for Coulomb explosion of doubly charged microclusters. Phys. Rev. Lett. 47: 160–163. Screbtii A I, R Di Felice, CM Bertoni, and R Del Sole. 1995. Ab initio study of structure and dynamics of the Si(100) surface. Phys. Rev. B 51: 1204–11201. Stoneham A M. 1965. Paramagnetic relaxation in small crystals. Solid State Commun. 3: 71–73. Stoneham A M. 1975. heory of Defects in Solids. Oxford, U.K.: Oxford University Press. Stoneham A M. 1979. Phonon coupling and photoionisation cross sections in semiconductors. J. Phys. C: Solid State Phys. 12: 891–897. Stoneham A M. 1999. Unpublished analysis. Stoneham A M. 2003a. Unpublished. Stoneham A M. 2003b. he challenge of nanostructures for theory. Mater. Sci. Eng. C23: 235–241. Stoneham A M. 2007. How sot materials control harder ones: Routes to bio-organisation. Rep. Prog. Phys. 70: 1055–1097. Stoneham A M and J L Gavartin. 2007. Dynamics at the nanoscale. Mater. Sci. Eng. C 27: 972–980. Stoneham A M and J H Harding. 2003. Not too big, not too small: he appropriate scale. Nat. Mater. 2: 77–83. Stoneham A M and A H Harker. 1999. Unpublished. Stoneham A M and B McKinnon. 1998. Excitation dynamics and dephasing in quantum dots. J. Phys.: Condens. Matter 10: 7665–7677. Stoneham A M, A J Fisher, and P T Greenland. 2003. Opticallydriven silicon-based quantum gates with potential for high temperature operation. J. Phys.: Condens. Matter 15: L447–L451. Sutton A P and J Chen. 1990. Long range Finnis Sinclair potentials. Phil. Mag. Lett. 61: 139–146. Tittel J, W Gohde, F Koberling, T Basche, A Kornowski, H Weller, and A Eychmuller. 1997. Fluorescence spectroscopy on single CdS nanocrystals. J. Phys. Chem. B 101: 3013–3016. Tran T K, W Park, W Tong, M M Kyi, B K Wagner, and C J Summers. 1997. Photoluminescence properties of ZnS epilayers. J. Appl. Phys. 81: 2803–2809. Turin L. 1996. A spectroscopic mechanism for primary olfactory reception. Chem. Senses 21: 773–791. Vasilevskiy M I. 2002. Dipolar vibrational modes in spherical semiconductor quantum dots. Phys. Rev. B 66: 195326–195335.

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Wallace D, A M Stoneham, A Testa, A H Harker, and M M D Ramos. 1993. A new approach to the quantum modelling of biochemicals. Mol. Simul. 2: 385–400. Williams P, E Keshavarz-Moore, and P Dunnill. 1996 Eicient production of microbially synthesized cadmium sulide quantum semiconductor crystallites. Enzyme Microb. Technol. 19: 208–213. Woggon U. 1997. Optical Properties of Semiconductor Quantum Dots. Berlin, Germany: Springer.

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Yakovlev V V, V Lazarov, J Reynolds, and M GajdardziskaJosifovska. 2000. Laser-induced phase transformations in semiconductor quantum dots. Appl. Phys. Lett. 76: 2050–2052. Yofe A D. 2001. Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems. Adv. Phys. 50: 1–208.

14 Electrochemistry and Nanophysics 14.1 14.2 14.3 14.4 14.5 14.6 14.7

Introduction ...........................................................................................................................14-1 Solid/Liquid Interface from a Molecular Point of View ..................................................14-3 Tunneling Process at Solid/Liquid Interfaces ...................................................................14-4 Electrochemical Processes at Nanoscale............................................................................14-5 Localization of Electrochemical Processes........................................................................ 14-7 Beyond Electrochemical Processes: In-Situ Tunneling Spectroscopy ..........................14-9 Beyond Electrochemical Processes: In-Situ Electrical Transport Measurements at Individual Nanostructures ............................................................................................14-12 14.8 Some Technical Aspects of the Application of Scanning Probe Techniques at Solid/Liquid Interfaces at Sub-Nanometer Resolution............................................. 14-14

Werner Schindler Technische Universität München

Importance of Nanoelectrode Tip Shape and Surface Quality • STM Tip Isolation • Electronic/Measurement Bandwidth Considerations

References......................................................................................................................................... 14-17

14.1 Introduction he increasing miniaturization of devices and the importance of nanoscopic structures for speciic functionalities in many prospective ields, such as electronics, sensorics, or catalysis, require a detailed knowledge of both basic physical and basic chemical processes on nanometer scales, as well as the availability of reliable fabrication processes suitable to prepare thoroughly tailored nanostructures. Moore’s law [1], the semiconductor industry’s roadmap for miniaturization of electronic devices, shows, for example, that the structure size of electronic devices approaches already the dimensions of molecules in the near future and is predicted to reach the atomic level in one or two decades (Figure 14.1). he technological efort by the semiconductor industry to reach these goals is huge. Each new generation of smaller structure sizes requires a still more expensive equipment, but fundamental and very diicult to solve problems of the patterning processes remain [2]. herefore, it is unclear if the traditional top-down nanostructuring technology may be useful for future device generations or if bottom-up technologies are to be developed to fulill the future demands for integration density and functionality. Nanostructures in the range of a few nanometers are of fundamental importance for exploiting quantum size efects at room temperature [3,4] or for unprecedented sensitivity in molecular detection [5,6]. hey are necessary in the ields of energy conversion and environmental issues for the development of high-eiciency catalyst materials, which are required to produce alternative (in view of fossil) fuels like hydrogen or to convert fuel into electricity making use of fuel cells. he research in this ield has shown that the speciic catalytic eiciency can be

improved signiicantly when decreasing the particle size down to a few nanometers in diameter. Since many of the currently discussed applications of nanostructures utilize a solid/liquid working environment, the research close to real conditions at solid/liquid interfaces is of great importance. Besides considerations concerning the beneits of nanostructures for certain functional applications, there are technological issues in the preparation of nanostructures that can be solved only by electrochemistry: Sputter or evaporation processes do not allow for a decent metal deposition into prestructured holes of large aspect ratio, i.e., small diameter and large height, when the diameter is smaller than a few tens of nanometers. his feature, however, is required for the fabrication of electrically conducting interconnect lines in electronic chips from one conducting layer to another through vertical interconnects (VIAs). Here, the so-called electrochemical superi lling technology ofers the unique possibility to fabricate reliably the vertical interconnects in electronic devices. It utilizes additives to the electrolyte, which control precisely where the metal is deposited in the hole, and guarantee a perfect metal growth from bottom to top of the hole. Overgrowth by metal at the top of the hole, resulting in a nonconducting spot in the inner of the hole, can be completely avoided [7,8]. Another example for exploiting the unique features of electrochemistry is the fabrication of magnetic disc read/write heads and their coils, or heads consisting of materials showing a giant magnetoresistance, which are diicult to fabricate by vacuum-based evaporation or sputtering techniques. hey have been the precondition to achieve the performance of today’s hard disk drives found in each computer [7,8]. 14-1

14-2

Handbook of Nanophysics: Principles and Methods 1014

100

1013 10

64 GBit

1011

1

16 GBit 1010

4 GBit

0.1

1 GBit 109

108

256 MBit

Focus of extreme UV lithography

64 MBit

Feature size (μm)

Components per chip (DRAM)

1012

0.01

16 MBit 107

4 MBit 1 MBit

106

Size of atoms

256 kBit

1980

1990

1E-3

Room temperature quantum efects

2000

2010

2020

1E-4 2030

Forecast of ULSI density trend (year)

FIGURE 14.1 Prediction of the size and density of ultralarge-scale integrated (ULSI) memory devices according to Moore’s law. he feature sizes of molecular electronic devices, or structures showing room temperature quantum efects, will be well below the focus of extreme UV lithography, which is required for the production of 20 nm structure sizes. (From Hugelmann et al., Surf. Sci., 597, 156, 2005. With permission.)

he latter two examples from existing technologies show that electrochemistry can be applied in mass fabrication processes and is even the basis for further technological progress, since it provides possibilities that cannot be provided by vacuum-based sputter or evaporation techniques. Another fast growing and prospective ield are self-organization processes on molecular scales, which may be possibly useful for molecular electronic circuits, fabricated from bottom-up. hey may allow for a functional and tailored architecture of molecules showing novel possibilities in electronics or sensorics. hus, it becomes clear why already in 1990 Nobel price winner Rohrer called the electrochemical interface the interface of the future [9]. A signiicant amount of information on electrochemical processes like corrosion or electroplating is documented already. Most of it has been derived from investigations on large, macroscopic scales. Since the invention of scanning probe techniques by Binnig and Rohrer in 1983 [10], electrochemical processes can be monitored and studied on atomic or molecular scales, which has been a great step forward toward a detailed understanding of the fundamentals of electrochemical processes. hus, delocalized electrochemical metal deposition processes [11], underpotential deposition (UPD) of metals [12], reconstruction [13],

or adsorption [14] phenomena at solid/liquid interfaces have been well understood during the past two decades. A further progress has been achieved in the recent years from the feasibility of studies at individual structures at atomic or molecular scales. Such nanoscale investigations eliminate statistical variations over large ensembles of structures, and avoid herewith associated errors in the measurements. As in ultrahigh vacuum (UHV) physics, the scanning tunneling microscope (STM) plays a dominant role in nanoscale investigations at solid/liquid interfaces. It is nearly the only measurement technique that allows for a (sub-)atomic resolution of nanostructures in “real space.” In this chapter, solely electrochemical processes on nanoscales are discussed, not the variety of nanostructuring processes where the scanning tunneling microscopy (STM) is used for a local modiication of solid/liquid interfaces at the nanometer scale, utilizing processes diferent from electrochemical processes. he key point is the interaction between STM tip and substrate surface at a certain distance (gap width), which may range from ten or more nanometers for solely electrochemical processes to less than one nanometer for electron tunneling processes. A consequence of distances in the sub-nanometer range is the very diicult to solve problem of making mechanical and, hence, simultaneously electrical contact between STM tip and substrate surface when the gap is too small. Such contacts result in mechanical damage and disturb the potentials of the tip or/and the substrate surface, resulting in undei ned electrochemical conditions. herefore, special attention must be given to the aspect whether solely electrochemical, or also other interactions between a tip or nanoelectrode and the adjacent electrode surface determine basically the experiment and its results. his discussion is not at all ridiculous, as can be seen from the history of nanostructure formation with the STM during the past two decades: Various techniques have been tried to prepare nanostructures with the STM tip on substrate surfaces, but most of them utilize mechanical, electrical, or other mainly unknown interactions between STM tip apex and substrate surface underneath [15–20], or a “jump-to-contact” deposition of metal clusters [21–23]. A clear separation of mechanisms for the nanostructuring process is diicult to achieve when the gap width is around or below 0.5 nm, although it would be crucial for deining the basic physical mechanisms involved in the nanostructure formation. So far, only methods with the tip in substantial distance to a substrate surface like the burst-like electrodeposition of metal nanostructures, utilizing a STM tip as an electrochemical nanoelectrode, are based exclusively on electrochemistry [24,25]. Upon discussing the nanoscale electrodeposition and spectroscopy with the STM at solid/liquid interfaces, at the end of this contribution a section on technical aspects of STM in a solid/liquid environment is added. he reason is that measurements on atomic scales and the investigation of modiications on nanoscales due to electrochemical processes require a very sophisticated control of the electrochemical potential at both the substrate and the STM tip and have to consider the inluence of the STM tip on the measured STM images. Serious investigations

14-3

Electrochemistry and Nanophysics

In contrast to the solid/ultrahigh vacuum interface, the presence of a liquid in contact with a solid surface results in a variety of important changes. he chemical potential (and the electrochemical potential when a voltage is applied between the solid surface and the electrolyte) must be maintained. Unless there are special electrochemical conditions, i.e., a potential control applied, upon contact, a respective modiication of electrolyte or electrode surface occurs by dissolution or deposition processes in order to establish the chemical and electrochemical equilibrium, respectively. Charges at the electrode surface are screened by ions or partially solvated ions opposite to the electrode surface, forming the so-called electrochemical double layer. he most simpliied picture developed by Helmholtz is the rigid double layer consisting of charges localized in front of the electrode surface at a certain distance of a few Angstroms and adjacent opposite charges in the electrode surface. his model has been extended by Guy, Chapman, and Stern (see Ref. [26]) toward a more realistic point of view. he electrochemical interfacial layer can be treated by the Poisson equation, which correlates the local charge distribution in the interfacial region with the variation of the electrical potential across the interfacial region, similar to the theoretical treatment of semiconductor space charge regions. In all models of the electrochemical interfacial layer, positive and negative charges are located in a distance to each other, thus resulting in a capacitor arrangement that gives rise to the electrochemical double layer capacity. he fact that there are water dipoles, ionic species, or molecules in the electrolyte and in contact with the electrode surface does not interfere with cleanliness considerations, unless these species or their concentration is unknown. Admittedly, it is easy to perform experiments in an undeined environment, i.e., in polluted electrolytes, since there is not a simple indicator like the vacuum pressure in UHV experiments. herefore, an oten discussed issue is cleanliness, which can be achieved in an electrochemical environment. In comparison to solid/ultrahigh vacuum (UHV) interfaces, the cleanliness conditions are comparable to the conditions of a vacuum pressure of 10−10 mbar or less [27]. Experimental and theoretical information on the detailed properties of solid/liquid interfaces exists, as summarized by various

I tunnel ∝

U bias ⋅ exp(− A Φ ⋅ z ) z

(14.1)

Both mentioned techniques provide a high sub-atomic resolution perpendicular to the electrode surface and can, thus, precisely detect structures with modulations perpendicular to the electrode surface. he modulation period corresponds to the diameter of a single water molecule. Tunneling of electrons from a STM tip to an adjacent substrate surface proceeds vacuum-like at small gap widths, and across individual water molecules at gap widths larger than the diameter of a single water molecule. he substructure in the interfacial layer is potential dependent [30,33] and may inluence redox processes accordingly. he dipoles and ionic species reorientate in the interfacial layer

3.5 3.0

2.0 1.5 1.0

Φlocal

Φlocal,fit

2.5

Φeff = 1.62 eV Substrate

14.2 Solid/Liquid Interface from a Molecular Point of View

reports [28,29]. he overwhelming majority of results have been derived from integral measurements at solid/liquid interfaces by, for example, spectroscopic methods (impedance spectroscopy) or x-ray techniques. Beyond the simple picture of an electrochemical double layer or modiied interfacial layer as described above, the molecular structure of the interfacial layer in front of a solid electrode surface is much more complicated. In the case of aqueous electrolytes, water molecules (dipoles) form several discrete molecular layers in speciic distances in front of a solid surface, which has been proven at irst by x-ray scattering [30]. In scanning tunneling microscopy (STM) experiments, the layering of water molecules is measured as a modulation of the tunneling barrier height with the tunneling gap width (Figure 14.2) [31,32], although usually a strictly expontential dependence of the tunneling current on the distance z is assumed:

Φ/eV

at solid/liquid interfaces utilize a bipotentiostat to control tip and substrate potentials thoroughly. In the section on technical aspects (Section 14.8) particularly the importance of a small tip apex diameter and the electronic bandwidth requirements of the bipotentiostat are addressed. In contrast to UHV STM, there is always the electrochemical double layer at the STM tip and substrate surface/electrolyte interface present. he capacitance associated with this double layer results in a limitation of the potential control. hese aspects are neglected in many investigations at solid/liquid interfaces found in the literature. However, they are decisive for the quality of STM investigations at solid/ liquid interfaces.

b

0.5

a

0.0 –0.5

Faraday regime 0.0

0.2

0.4

0.6 z/nm

0.8

1.0

1.2

FIGURE 14.2 Dependence of the tunneling barrier height on the distance between STM tip and substrate surface. The zero point of the distance scale has been deined by the point of jump-to-contact. he data points (black dots) are from a series of 12 single experiments, showing the statistical distribution of tunneling barrier heights. Φlocal denotes the barrier height values as determined from the current–distance measurements according to Φlocal ≈ (d ln I/dz)2 A−2 = (2.302)2(d log I/dz)2 A−2, using Equation 14.1. Gray lines are its to the data. Parameter a denotes the modulation period, parameter b denotes roughly the distance of the irst water layer from the Au(111) surface.

14-4

14.3 Tunneling Process at Solid/Liquid Interfaces In contrast to the tunneling process in ultrahigh vacuum, the mechanism of electron tunneling from the very last atom of the STM tip apex to the closest adjacent atom of the electrode surface has been unclear for a long time. he low tunneling barrier heights around 1.5 eV, which have been measured in many STM experiments at solid/liquid interfaces have remained basically unexplained. In non-state-of-the-art experiments, tunneling barrier heights even lower than 1 eV [34] may originate also from polluted electrolytes, which provide tunneling states at lower energy levels across the polluting molecules in the tunneling gap, which are nonexistent in clean electrolytes. Although STM has been performed for nearly two decades, the usual interpretation of STM data is based on the assumption that the tunneling barrier height is laterally constant and independent of the gap width, as it is in ultrahigh vacuum, except for the closest distances where the barrier height decreases with the gap width. Any height variation of the STM tip in the constant current imaging mode is assumed to be caused by a corresponding change of the substrate topography. he overwhelming success of in-situ STM, for example, in the investigation of metal growth processes at solid/liquid interfaces proves the applicability of this assumption for many cases. But the more investigations are performed on molecular or atomic scales at single nanostructures or molecules, the more would be known about the impact of the solid/liquid interface on the tunneling process. he observation of a modulation in the current–distance curves measured at Au(111) (Figure 14.3), which originates from a modulation of the tunneling barrier height with the gap width (Figure 14.2), indicates that the electronic structure of the tunneling gap varies with the gap width. It is evident that the electronic structure in the gap should be correlated with the molecules arrangement in the gap. here are water molecules, solvated cations and anions, or other molecular species in the electrolyte. From a geometrical point of view, solvated ions may not it into small tunneling gaps. he diameter of a solvated ion is two times its Pauling radius plus the diameter of two water molecules [35,36]. he diameter of water molecules is between 0.28 and 0.34 nm, the ion showing one of the smallest Pauling radii is Na+ with a Pauling radius of 0.1 nm. From this, the diameter of solvated Na+ ions can be calculated to be approximately 0.76 nm. he widely used ClO4− or SO42− anions in electrolyte solutions show diameters of approximately 1.05 nm

103 102 101 Itip/nA

with the electrode potential, depending on positive or negative electrode surface charges with respect to the point of zero charge (pzc). One may expect, that such discrete interfacial layers at solid/liquid interfaces determine or at least inluence charge transfer processes at solid/liquid interfaces in general. Since the substructure in the interfacial layer is a dynamical arrangement of ionic species or water dipoles of high mobility, large statistical luctuations are possible. Since the detection of such efects requires sophisticated experimental equipment, there are at present very few investigations reported in the literature [31,32].

Handbook of Nanophysics: Principles and Methods

100

Faraday regime

10–1 10–2

Itip

10–3

Iit,mean

10–4 0.2

0.4

0.6 z/nm

0.8

1.0

1.2

FIGURE 14.3 Modulation of the tunneling current at a Au(111) surface, as measured ba in-situ DTS using a Au STM tip. he Faraday current at the tip is below 10 pA. Black dots: Current–distance curve measured with a tip movement of 6.7 nm s−1; gray line: it of a straight line to the data according to Equation 14.1, taking only current values between 50 pA and 1000 nA into account. he mean value of an efective tunneling barrier height corresponding to the slope of the it is Φef = 1.51 eV. EWE = 240 mV, E tip = 340 mV, U bias = E tip − EWE = 100 mV in the range z > 0, electrolyte: 0.02 M HClO4. Potentials are quoted with respect to the standard hydrogen electrode (SHE).

in their solvated state [35,36]. From these considerations, it can be deduced that anions will hardly it into a tunneling gap unless it is larger than 1 nm or, correspondingly, unless the tunneling current is smaller than 10 pA, according to Figure 14.3. Figure 14.4 shows in a sketch drawn to a realistic scale how a modulation of the molecular structure in the tunneling gap can be caused by diferent conigurations of water molecules in the tunneling gap. he orientation of the water molecule dipoles (hydrogen or oxygen atoms pointing toward the electrode surface) depends on the electrode potential [30], but is not decisive for the discussion here. At small tunneling gaps with widths below 0.3 nm there is no space let in the gap for the smallest available molecules which are single water molecules. he result is that the electron tunneling process occurs either across water molecules outside the direct tunneling gap, or across the direct tunneling gap at closest distance of substrate surface and adjacent STM tip apex atoms (Figure 14.4a). In the latter case, tunneling occurs across a vacuum-like tunneling gap. With increasing gap width, water molecules can penetrate into the tunneling gap. he tunneling barrier height is at its minimum when full multiples of a water layer it into the tunneling gap (Figure 14.4b). he tunneling barrier height is at its maximum when the gap width corresponds to full multiples plus one half of a single water layer (Figure 14.4c). At these conditions, there is a vacuum-like contribution to the tunneling process across the gap. hus, the modulation of the barrier height indicates a strong layering of interfacial water at solid/liquid interfaces. he efect can be observed in the measurements due to the interplay of gap width and barrier height in the expression for the tunneling current (Equation 14.1). he tunneling process

14-5

Electrochemistry and Nanophysics Tip with 20 nm radius

0.0 Substrate 0.2

Tip with 20 nm radius

0.4

(b)

Substrate

0.6

Gap width/nm

(a)

Tip with 20 nm radius 0.8

(c)

1

Substrate

2 Φ/eV

FIGURE 14.4 Schematic illustration of the molecular structure in the tunneling gap at various gap widths, explaining the modulation in the tunneling barrier height across the tunneling gap. he size of the STM tip is drawn to a realistic scale. he water molecules are oriented for electrode potentials of both substrate and STM tip negative to the point of zero charge.

is more likely across the direct gap where the gap width is minimum, even if the barrier height in the direct gap is larger than the barrier height in the areas surrounding the direct gap (Figure 14.4). As far as is known, the tunneling barrier height across water molecules is smaller than the vacuum tunneling barrier height [29], according to the results presented in Figures 14.2 and 14.4, it is approximately 0.8 eV. Considering case (a) in Figure 14.4, the gap across a single layer of water molecules would be approximately 0.2 nm (one atomic metal layer thickness) larger than the direct gap. Without considering the larger area for tunneling across the water molecules (see Figure 14.4), the ratio of the two tunneling current (density) contributions would be according to I directgap Δz watergap = ⋅ exp (− A ⋅ ( Φ directgap I watergap Δz directgap ⋅ Δz directgap − Φ watergap ⋅ Δz watergap ))

(14.2)

his ratio is approximately 0.5 for values of Δzdirectgap ≈ 0.23 nm, Φdirectgap ≈ 5 eV, and Δzwatergap ≈ Δzdirectgap + 0.2 nm, Φwatergap ≈ 0.8 eV. he direct tunneling current across the vacuum gap increases on the cost of the tunneling current across water molecules outside the direct gap when the tunneling gap width decreases, and direct tunneling becomes less important when the tunneling gap becomes larger. hese considerations show that the detailed geometric coniguration of the tip apex is important. Very small tip radii are required to minimize the current across the water molecules

at distances larger than the direct gap width. he parallel path for the tunneling current across the water molecules lowers the achievable lateral resolution. Highest resolution may be achieved when the direct gap is vacuum-like at small gap widths. heoretical studies, which have been stimulated by the experimental indings, conirm the signiicance of the electronic states in water molecules in the gap for the tunneling barrier height [33].

14.4 Electrochemical Processes at Nanoscale Electrochemical growth and dissolution processes, or electrochemical reduction and oxidation processes in general, are controlled by the potential that is applied across the electrochemical double layer between an electrode (working electrode [WE] or substrate) surface and a reference electrode in the bulk electrolyte. From a macroscopic point of view, a conducting or semiconducting electrode surface provides a uniform potential at the electrode surface, which controls the redox reactions at the electrode surface. Assuming a redox reaction Red ⇔ Ox n + + n ⋅ e −

(14.3)

the corresponding Nernst equation becomes E 0 = E 00 +

RT a ⋅ ln Ox . nF aRed

(14.4)

It describes the equilibrium potential for the redox reaction when no net current lows across the electrochemical double layer,

14-6

Handbook of Nanophysics: Principles and Methods

⎛ αa nF η − α cnF η ⎞ j = j0 ⎜ e RT − e RT ⎟ ⎝ ⎠

(14.5)

with the exchange current density j0, the charge transfer coeicients αa and αc for anodic and cathodic direction, respectively, and the overpotential η. he equation describes the current voltage characteristics of an electrode when a net reaction current j lows at the overpotential η, giving rise to either a macroscopic oxidation or reduction process at this electrode surface. A detailed discussion of the current, related to kinetic and difusion phenomena can be found in Ref. [38]. From detailed studies of electrodeposition and dissolution processes, and corrosion phenomena, in general oxidation and reduction processes at electrode surfaces, it becomes evident that redox processes at surfaces are not only determined by the electrode potential, as suggested by the above discussion and equations, but additionally determined by the speciic electrode surface structure. Although the impact of surface defects on nucleation and growth has been known since a long time [11], in particular scanning probe techniques like STM, which allow for an atomically resolved imaging of surfaces in real space [39–41], resulted in a rapid increase of a detailed knowledge about the impact of electrode surface structure on the occurrence of redox processes. here is a comprehensive literature available on detailed studies on various systems, as presented, for example, in the book Electrochemical Phase Formation and Growth by Budevski, Lorenz, and Staikov [11]. he atomic modulation of a perfect single crystal lattice plane as the best realized electrode surface provides top, bridge, or hollow sites as positions for adsorbates, molecules, or atoms. In addition, many surfaces show reconstruction phenomena that give rise to a more or less periodic surface structure, and there are unavoidable surface defects, such as step edges, kink sites, vacancies, or screw

Bare stepped substrate

E0D system Decoration of point defects by 0D systems Electrode potential E

i.e., no macroscopic reaction occurs, and forward current equals the backward current. aOx is the activity of the Oxn+ ions in the electrolyte, and aRed the activity of the reduced phase. he activity is equal to unity for a three-dimensional (3D) bulk phase. At potentials EWE > E0 (undersaturation conditions, underpotential ΔE = EWE − E0 > 0), the oxidation process is favored, at potentials EWE < E0 (supersaturation conditions, overpotential η = EWE − E0 < 0), the reduction process is favored. he standard potential E00 of any electrochemical reaction can be calculated from the corresponding Gibb’s free enthalpy ΔG 00 of this reaction: E00 = (−ΔG 00/nF). Standard potentials (at standard conditions 1013 mbar and 25°C) are tabulated for a large variety of chemical reactions [37]. he electrode current is determined by the reaction kinetics and by dif usion processes in the electrolyte during the course of electrochemical reactions. Dif usion is responsible for the transport of ions to or from the electrode surface; migration efects may occur only within the electrochemical interfacial layer around the electrode surface since the potential decays within this layer as discussed above. he reaction current based on the reaction kinetics at an electrode surface is described by the Butler–Volmer equation

E1D system Decoration of monatomic steps by 1D systems Formation of expanded gaslike 2D systems E2D system Formation of condensed 2D systems E3D system Formation of 3D systems

FIGURE 14.5 Substrate inhomogeneities responsible for the delocalized formation of low dimensional systems (LDSs) in the undersaturation range. he underpotential ΔEiD,system = (E − EiD,system) > 0 for a phase formation process of cations, and ΔEiD,system = (E − EiD,system) < 0 for a phase formation process of anions. E must be replaced on the ordinate by −E for the latter case.

dislocations, to mention only a few (Figure 14.5). Each structural inhomogeneity corresponds to a certain adsorption energy for molecules or atoms, and redox processes occur preferentially at speciic surface sites, although the electrode potential is uniformly applied at the electrode surface. he correlation of the nanoscale inhomogeneity in surface structure and redox processes occurring at these inhomogeneities is of greatest interest for electrodeposition processes as well as for redox processes, for example, in the ield of catalysis, where precisely taylored catalyst nanoparticles may increase the mass-speciic catalytic activity signiicantly. A prominent example for surface structure–dependent growth is the decoration of the kink sites of the Au(111) herringbone reconstruction by metal atoms, for example, Co or Ni [42]. In model systems, the type of surface inhomogeneity–dependent growth and dissolution behavior can be observed, for example, in the electrodeposition of Pb on Ag(111) (Figure 14.6). Pb deposition onto the Ag(111) surface, or dissolution from this surface, occurs in the underpotential range at speciic potentials depending on the particular sites where the deposition/dissolution process occurs: at point defect sites, step edges, or on lat terraces [43]. hese types of inhomogeneities can be classiied as zerodimensional (0D), one-dimensional (1D), or two-dimensional (2D). hey are energetically diferent sites that show a diferent equilibrium potential E0 for the corresponding electrochemical

14-7

Electrochemistry and Nanophysics

these techniques provide usually a low contrast between diferent metals. Decoration efects are in this case rather observed when the charge lowing at a certain potential to or from the electrode surface is determined. Step edge decoration results in a charge peak of the order of μC or less, which is detectable in carefully performed cyclic voltammetry experiments. A nice example is the electrodeposition of Pd onto Au(111), in which the corresponding charge peak can be found [45], but where the Pd growth at Au(111) step edges cannot be seen in STM images. hus, considering only STM images, and neglecting the inluence of nanoscale inhomogeneities on the electrodeposition process, results in wrong results [46].

E1D Pb η1D E2D Pb

E3D Pb

η2D

η3D

D2 200

D3

D1

0 A3 –100

14.5 Localization of Electrochemical Processes

A1

A2

Nucleus size/a.u.

j/μA cm–2

100

–200 3D Stability range –100

2D Stability range 0

100 E – E3D Pb/mV

1D Stability range 200

300

FIGURE 14.6 Cyclic voltammogram of Ag(111)/Pb2+ and ClO4− anions, showing the formation of iD metal systems (i = 1, 2, 3). he typical adsorption and desorption peaks are denoted by An and Dn (n = 1, 2, 3), respectively. he estimated equilibrium potentials EiD,Pb of the corresponding iD Pb systems as well as the overpotential regions ηiD are indicated in the upper part of the igure. he curves in black illustrate the sizes of the respective iD nuclei as a function of overpotential. (From Lorenz, W.J. et al., J. Electrochem. Soc., 149, K47, 2002. With permission.)

process. hese experimental observations led to the formulation of the concept of low-dimensional systems (LDSs), which describes these experimental indings in electrodeposition processes in terms of a variation of the Nernst potential with the type or dimensionality i of particular defects or surface inhomogeneities [43]: E 0iD system = E 003D system +

RT aOx ⋅ ln nF aRed, iD system

(14.6)

Among the various low-dimensional inhomogeneities, step edges on atomically lat surfaces show oten a decoration by metal atoms in the underpotential range. Utilizing this knowledge, pyrolytic graphite (HOPG) surfaces can be used as substrates to grow electrochemically large arrays of metal nanowires at the HOPG step edges [44]. he large atomically lat terraces and the low-achievable defect density on the terraces allow for a nucleation of metal atoms almost exclusively at the HOPG step edges. A precise adjustment of the electrode potential (in the underpotential regime) allows then the decent growth of metal wires of diferent sizes. he decoration of metal step edges by metal atoms is diicult to resolve in STM or other scanning probe measurements, since

Electrochemical processes, as discussed in Section 14.4, are always localized in the sense that they depend strongly on the atomic or nanoscale structure of the electrode surface they utilize. his is a more or less passive inluence of a certain electrode surface structure on a speciic electrochemical redox process. In this section, electrochemical processes are discussed, which are initiated and proceed only on speciic areas of an electrode surface, thus, laterally conined. hese may be redox processes at single nanostructures on foreign electrode surfaces, redox processes on lithographically structured electrode surface areas, or redox processes initiated by special electrochemical conditions only in a speciic substrate area by an adjacent electrochemical nanoelectrode. Supposing there is a single nanostructure on a foreign electrode surface, electrochemical redox processes can be initiated at this single nanostructure by a proper adjustment of the electrode potential. An example would be a catalytically active cluster on a catalytically inactive electrode surface as, e.g., Pt on C. he reaction at such a nanostructure is governed by the reaction kinetics as well as by difusional aspects for the transport of species to and from the active cluster. here is either the possibility to measure the reaction currents integrally over the whole electrode surface, which would require a very high resolution of the measured electrode current, or to measure the reaction current locally resolved with a detector nanoelectrode, which applies the reverse redox reaction for probing the concentration of reaction products from the irst redox reaction of interest. he charge transfer during a redox reaction is k · n · 1.602 · 10−19 A, with n the number of transferred electrons in each molecule reaction and k the reaction rate. In the irst case, this may be diicult to measure for reactions showing low reaction rates since a current resolution of fA is required, assuming k values of the order of 104 s−1. In the second case, the measured current and its time dependence are determined by the surface properties of the detector nanoelectrode, by the kinetics of the reverse redox reaction at the detector nanoelectrode, and by difusion processes in the gap between active nanostructure on the electrode surface and the detector nanoelectrode. A substantial inluence of a detector nanoelectrode on the measured results

14-8

may not be excluded unless there is evidence from modeling that the disturbing inluence can be estimated and accounted for in the measurements. When a nanoelectrode is positioned above a substrate surface in a distance of ≥10 nm, the electrochemical double layers of both substrate and nanoelectrode are well separated. At ion concentrations of 10−3 to 10−1 M, as typically used for electrochemical experiments, the thickness of the electrochemical double layer ranges from less than 1 nm to a few nanometers [47]. he electrochemical processes in such a geometry are mainly determined by the potentials of the two working electrodes, i.e., nanoelectrode and substrate, and by difusion processes of ions in the electrolyte between the two electrodes. Migration efects need not be considered since the potentials across the solid/liquid interfaces at the electrodes drop down across the electrochemical double layers. A direct local inluence of potentials on the deposition process may be reasonable only in the case of overlapping electrochemical double layers from a nanoelectrode and the adjacent substrate surface area. Due to an appropriate adjustment of over- and undersaturation conditions, electrochemical nanoelectrodes provide the possibility to change or to measure local ion concentrations [24,25,48]. his allows for a local modiication of electrochemical conditions at surfaces and to perform a local electrochemistry with a lateral resolution in the nanometer range. his has been realized in scanning electrochemical microscopy (SECM) [49–53], which utilizes solely electrochemical processes for imaging of surfaces, and can be used to study locally electrochemical processes occurring either at the substrate underneath the SECM tip or in the electrolyte in the gap between substrate and SECM tip. he achievable lateral resolution is typically in the micrometer range due to (1) the metal tip electrode diameter which is variable, but hard to downsize below 100 nm, and due to (2) the dif usion behavior of the electroactive species in the gap between substrate and tip electrode, which are separated by micrometers rather than nanometers. Such a geometry results in dif usion proi les of micrometer width at the position of the tip electrode even if there is a point source at the substrate surface. In the STM, a tip can be either used as a nanoscale generator electrode, which can release tip material locally into or collect ions locally from the electrolyte surrounding the tip [24,25,54], or used as a local sensor for electrolyte constituents with a spatial resolution of the order of 10−15 cm3 [48,55]. Using the STM tip as a generator electrode, single metal clusters can be electrodeposited on metal, as well as on semiconducting substrate surfaces. his is a substantial diference to other preparation techniques that work only on speciic substrate surfaces, as for example the jump-to-contact mechanism [56]. In addition to the requirements for STM, an electrochemical nanoelectrode must provide a known geometry and a clean surface. his nanoelectrode provides lateral resolution in the nanometer range, which requires nanoelectrode apex diameters also in the nanometer range. A suitable procedure to achieve such electrodes is sputtering of electrodes [57]. he electrochemical deposition of metal clusters onto substrate surfaces can be fully understood by solving the dif usion

Handbook of Nanophysics: Principles and Methods

equation with appropriate boundary conditions. Modeling the STM tip apex as a hemisphere with radius a, neglecting in a irst approach the other tip areas exposed to the electrolyte, which is reasonable since these do not contribute much to the ion diffusion to the substrate area opposite to the tip apex, allows for solving the dif usion equation for metal (Me) ions dissolving from the STM tip. he concentration enhancement of Mez+ at a particular distance R from the center of the STM tip apex hemisphere and at the time t0 is given by [58]

C ( R, t 0 ) =

a jMez + eR πD

t0

×

∫ 0

1 t

⎛ (R − a)2 ⎞ ⎛ R2 + a2 ⎞ ⎪⎫ ⎪⎧ − exp ⎜ − ⎨exp ⎜ − ⎬ dt ⎟ 4 Dt ⎠ 4 Dt ⎟⎠ ⎭⎪ ⎝ ⎝ ⎩⎪

(14.7) Typical dif usion constants for ions in diluted aqueous electrolytes are D ≈ 10−5 cm2 s−1 [59]. he possible enhancement of ion concentration is important for the supersaturation that can be achieved. For reasonable geometries, this enhancement is of the order of 10–20, depending on the distance r. he major parameters determining the diameter of the growing metal cluster, that is the growth area, are the (1) emission current density jMe , (2) the STM tip–substrate distance Δz, (3) the substrate potential EWE , and (4) the STM tip apex diameter. he process is discussed in detail in Ref. [58]. his local variation of the metal ion concentration around the STM tip can be exploited to control supersaturation conditions in the volume around the STM tip, and in particular at the surface of a substrate underneath the STM tip. Since STM tips can be easily positioned above any substrate surface, the metal deposition process onto a substrate surface can be controlled laterally resolved by adjusting a particular stationary metal ion concentration in the volume around the STM tip. hus, this technique provides the possibility to control the metal deposition process precisely by the metal ion concentration rather than by adjusting the electrode potential, which is the same in all substrate surface areas. he reverse process, the generation of undersaturation conditions around the STM tip can be correspondingly achieved by applying an appropriate potential to the STM tip where ions are electrodeposited from the electrolyte onto the STM tip. In order to achieve a suicient supersaturation in a small substrate area underneath the STM tip, a special potential routine must be applied at the STM tip (Figure 14.7). Since mostly noble metal STM tips are used in electrochemical environments, in a irst step, the STM tip is covered with a layer of metal (Me), which is deposited from the electrolyte around the STM tip, and a nanoelectrode is formed. he second step of the procedure consists then of a dissolution of this metal from the STM tip, resulting in a concentration proi le for metal ions around the STM tip and resulting inally in a suicient supersaturation to initiate nucleation and subsequent growth of a cluster on a particular small substrate surface area underneath the STM tip. To achieve this, the substrate potential must be properly adjusted such that supersaturation conditions are achieved when the z+

14-9

Electrochemistry and Nanophysics Itip/nA –100

–50

0

50

100

0.214 ± 0.02 nm

150 (nm)

–150

1

–30

0.236 ± 0.026 nm

0

–20

0

–10

30

(nm)

1

(nm)

0 10

30

) m (n

t/ms

30

20 nm

20

0

30

40

(nm)

20 nm

50

0

60 70 80 90 –0.8

–0.6

–0.4

–0.2

0.0

0.2

Etip/V vs. SHE

FIGURE 14.7 Potential transient as applied at the STM tip, and current transient as measured at the STM tip upon application of the potential routine during the deposition procedure. In a i rst step, metal is deposited electrochemically from the electrolyte onto the STM tip. he deposited charge is Qcat. Localized electrodeposition is achieved in a subsequent step by a burst-like dissolution of metal ions from the STM tip, resulting in the generation of supersaturation conditions at the substrate surface underneath the STM tip. Potentials are quoted with respect to the standard hydrogen electrode (SHE). (From Lorenz, W.J. et al., J. Electrochem. Soc., 149, K47, 2002. With permission.)

Mez+ ion concentration is increased during the second step of the deposition procedure. An example of a single Co cluster, which is three atomic layers high, deposited onto a reconstructed Au(111) surface is shown in Figure 14.8. A sequence of STM images before and ater deposition and ater subsequent dissolution of a single Pb cluster on hydrogen terminated n-Si(111):H is shown in Figure 14.9. Clusters deposited by localized electrodeposition can be dissolved upon increase of the substrate potential, as shown in Figure 14.9c. Like localized electrodeposition, localized dissolution processes can be also performed by generation of local undersaturation conditions using a STM tip. h is can be observed during normal scanning in a STM, when the electrochemical conditions are adequately applied [60].

FIGURE 14.8 STM image of a single Co cluster deposited on Au(111) by localized electrodeposition. he fwhm of the cluster is 15 nm as measured by STM. he cluster shows three atomic layers which form a pyramidal shape. Cluster deposition at EWE = −460 mV, Δz = 20 nm, cathodic predeposited tip charge Q cat = 1500 pC which has been fully dissolved during the burst-like dissolution from the STM tip. STM image measured at Itunnel = 916 pA. he step heights are mean values which have been derived from a series of measurements across different clusters and various line proi les across each cluster, as exemplarily indicated by the line proile shown. Electrolyte: 0.25 M Na 2SO4 + 1 mM CoSO 4. Potentials are quoted with respect to the standard hydrogen electrode (SHE). (From Schindler, W. and Hugelmann, P., Electrocrystallization in Nanotechnology, G. Staikov, ed., Wiley-VCH, Weinheim, Germany, 2007, p. 117. With permission.)

14.6 Beyond Electrochemical Processes: In-Situ Tunneling Spectroscopy Spectroscopy using the tip of a STM as probe is a very suitable tool to investigate local electronic properties of surfaces, electronic states, or changes of the work function of surfaces or single particles. he principle is schematically illustrated in Figure 14.10. Due to the atomic resolution of STM, surface inhomogeneities like step edges on atomically lat surfaces, defects, or impurity atoms can be studied with respect to their electronic properties. his has been demonstrated in ultrahigh vacuum, for example, by Eigler and coworkers for the case of magnetic atomic impurities adsorbed on atomically lat surfaces [61]. In an electrochemical environment, electrochemical processes always occur at substrate or tip surface, which result in electrochemical (Faraday) currents. he total tip current measured is then the sum of Faraday and tunneling currents at the STM tip. In order to minimize Faraday currents, the tip has to be properly isolated except for the tip apex, which makes tunneling contact to the adjacent substrate surface. Various scanning

14-10

Handbook of Nanophysics: Principles and Methods

0

(nm)

0

150

(b)

0

5 0 150

(nm)

(nm)

0

5

0 0

(nm )

(nm)

)

(nm)

5

0 0

(nm

5 0 150

(nm)

(nm)

5

0

150

(nm)

(nm)

(nm)

0 150

(a)

150

)

5

(nm

(nm)

150

150

0

0

(c)

0

(nm)

150

FIGURE 14.9 Localized electrodeposited Pb cluster on n-Si(111): H. (a) Bare n-Si(111): H surface before cluster deposition; (b) same n-Si(111): H surface ater deposition of a Pb cluster; (c) same n-Si(111): H surface upon a change of the substrate potential EWE resulting in a dissolution of the Pb cluster. Electrolyte: 0.1 M HClO4 + 1 mM Pb(ClO4)2. Imaging conditions: EWE = −240 mV, Etip = +640 mV, Itip = 200 pA. Cluster deposition parameters: EWE = −240 mV, cathodic predeposited tip charge Qcat = 2000 pC, which has been fully dissolved during the burst-like dissolution from the STM tip, Pb2+ ion current during the burst-like dissolution from the STM tip I Pb2 + = 120 nA, tip substrate distance during cluster deposition Δz = 20 nm. Potentials are quoted with respect to the standard hydrogen electrode (SHE). Itip = Itunnel + Itip,EC –ICE = Itip,EC + IWE,EC Etip

EWE

Tip

CE Ref

Itip,EC IWE,EC

Itunnel Substrate

IWE = IWE,EC – Itunnel DTS

Itip = Itunnel + Itip,EC –ICE = Itip,EC + IWE,EC Etip

EWE

Tip

CE Ref

Itip,EC IWE,EC

Itunnel Substrate

IWE = IWE,EC – Itunnel VTS

Itip = Itunnel + Itip,EC –ICE = Itip,EC + IWE,EC Etip

EWE

Tip

CE Ref

Itip,EC IWE,EC

Itunnel Substrate

IWE = IWE,EC – Itunnel

FIGURE 14.10 Schematic drawing of in-situ spectroscopy using a STM tip as probe. he currents through STM tip (Itip,EC and Itunnel) and substrate surface (IWE,EC and −Itunnel) are determined by the electrochemical interface of the electrode areas exposed to the electrolyte, and by the tunneling contact as shown in the igure. In DTS the gap width is changed at constant bias voltage, in VTS the bias voltage is changed at constant gap width.

14-11

Electrochemistry and Nanophysics

EFermi,tip

– eUbias

Tip

EFermi,substrate Gap width

Substrate

z

FIGURE 14.11 Idealized schematic of a tunneling contact between STM tip and substrate surface. he tunneling barrier height is Φ, the bias voltage is Ubias = Etip − EWE .

probe spectroscopy (SPS) investigations at solid/liquid interfaces have been reported in the last 20 years [34,62–66]. he dependence of the tunneling current on the distance between STM tip and substrate surface, that is the gap width z, can be calculated by quantum mechanics and is described for a rectangular potential barrier of height Φ and width z as shown in Figure 14.11 by the WKB relation [67]: I tunnel ∝

U bias ⋅ exp(− A Φ ⋅ z ) z

(14.8)

Ubias denotes the voltage applied across the tunneling contact, that is, between STM tip and substrate surface. A = 10.12 (eV)−1/2 nm−1 is for the case of a vacuum tunneling gap, and also used for tunneling at solid/liquid interfaces. Equation 14.3 neglects any nonlinear bias voltage dependencies of the tunneling current, and is therefore only valid for small bias voltages. Additionally, it assumes identical Fermi levels on both sides of the tunneling barrier, in STM tip and substrate. he exponential dependence of the tunneling current on the gap width results in the very high atomic lateral resolution of STM. his is a principal advantage of STM compared to AFM which shows only a power-law-like 1/z distance dependence of the atomic forces. But on the other hand, the exponential decay of the tunneling current with the gap width requires an optimum in the stability of the gap width during a spectroscopic measurement, and requires the application of fast measurements, which are discussed in more detail in Section 14.8. here are basically two diferent types of spectroscopic techniques: distance tunneling spectroscopy (DTS) and voltage tunneling spectroscopy (VTS), as shown in Figure 14.10. he tunneling current is determined by the initial and inal density of states on either side of the tunneling gap, but also by the tunneling barrier in the tunneling gap, as discussed in Section 14.3. he tunneling barrier height across a vacuum gap is typically of the order of the work function, which is approximately 5 eV for metals [68]. In contrast, the tunneling barrier at solid/liquid interfaces depends

105 4

104

Jump to contact

103

2 0

102

n = R * G0

Φ

on the molecular coniguration in the tunneling gap, and has been found to show modulations due to the molecular arrangement in the tunneling gap as discussed in Section 14.3. he constant average values of tunneling barrier heights of approximately 1.5–1.6 eV, as reported in some publications for solid/liquid interfaces [31,65,69] are physically not relevant. DTS denotes the measurement of the distance dependence of the tunneling current at a constant bias voltage (Figure 14.12). Both substrate potential and STM tip potential, whose diference is the bias voltage, are adjusted with respect to a reference electrode. he bias voltage is kept at a constant value, which deines the initial and inal electronic states in the substrate and tip, respectively. he gap width is varied by either approaching or retracting the STM tip toward the substrate surface. Since the potential of the substrate (irst working electrode) and the potential of the STM tip (second working electrode) are kept constant throughout the measurement, there is no inluence of double layer charging currents on the measurement. hus, in the case of DTS, the most important requirement is a suicient

Itip/nA

E(z)

–0.08 –0.04 0.00

101 100

Faraday regime

10–1 Itip

10–2 10–3

Iit,mean

10–4 0.0

0.2

0.4

0.6

0.8

1.0

1.2

z/nm

FIGURE 14.12 In-situ DTS measurement at a Au(111) surface using a Au STM tip, starting from the regime of the formation of quantized conductance channels at tip currents of several μA to the regime of Faraday tip currents below 10 pA. he complete data set has been superposed from three diferent DTS measurements in diferent overlapping current ranges, using diferent tip current converter modules for the measurements. h is has been necessary to achieve the required signalto-noise ratio. he zero point of the distance scale has been deined by the point of jump-to-contact. Black dots: Current–distance curve measured with a tip movement of 6.7 nm s−1; gray line: it of a straight line to the data according to Equation 14.1, taking only current values between 50 pA and 1000 nA into account. he mean value of an efective tunneling barrier height corresponding to the slope of the it is Φef = 1.51 eV. EWE = 240 mV in the range z > 0, EWE = 175.5 mV in the range z < 0, Etip = 340 mV in the range z > 0, Etip = 240 mV in the range z < 0, Ubias = Etip − EWE = 100 mV in the range z > 0, Ubias = 64.5 mV in the range z < 0. Electrolyte: 0.02 M HClO 4. Potentials are quoted with respect to the standard hydrogen electrode (SHE). (From Schindler, W. and Hugelmann, P., Electrocrystallization in Nanotechnology, G. Staikov, ed., Wiley-VCH, Weinheim, Germany, 2007, p. 117. With permission.)

14-12

bandwidth of the experimental setup to allow (1) for measurements in suiciently small times matched to the thermal drit rate of the gap width and (2) for recording changes of the tunneling current with the gap width at suicient accuracy. he example shown in Figure 14.12 is the current distance curve of a Au(111) substrate in 0.02 M HClO4 and a Au STM tip [31,69]. his coniguration ensures the same Fermi level and the same density of states on both sides of the tunneling contact, in the STM tip and in the substrate, respectively. Since the current is recorded up to values where quantized conductance channels are formed, the position of the STM tip can be also absolutely scaled. he zero point on the z-scale of the STM tip position is deined as the position where the jump-to-contact occurs. h is deinition of the zero point of the STM tip position shows an absolute error of approximately 0.05 nm [31,69]. Upon jump-to-contact, quantized conductance channels are formed. he tip current in this regime is described by Itip ≈ Ubias . nG 0, where G 0 = 2e2/h ≈ (12.9 kΩ)−1, and n = 1, 2, 3… (inset of Figure 14.12) [69]. In the tunneling regime at 0 < z < 1 nm, the tunneling current is modulated when the gap width increases. At gap widths larger than 1 nm the Faraday current at the STM tip surface exposed to the electrolyte becomes larger than the tunneling current. he Faraday current results from electrochemical processes at the unisolated tip apex surface and is basically independent of the gap width. he modulation of the tunneling current distance curve is due to the layering of the water molecules at solid/liquid interfaces. he modulation period coincides with the diameter of single water molecules and with the thickness of a single water layer at a solid/liquid interface [31,32]. It should be mentioned that in all experiments using STM techniques at room temperature it is likely that many atomic or molecular conigurations are averaged and the resulting images or data are averaged over all possible conigurations. Relaxation or reorientation processes in the electrochemical double layer or in the tunneling gap may occur on much smaller time scales than the time scale of a STM measurement, though this may be performed in milliseconds. It is known that reorientation processes in the solvent occur on atomic scales within a timescale of 10−11 to 10−13 s [70–72]. herefore, precise measurements may require multiple sweeps in order to increase the statistical signiicance of the data. VTS is performed at a constant gap width and probes the dependence of the tunneling current on the bias voltage (Figure 14.13). In contrast to DTS, VTS requires to change the working electrode potential of preferentially the STM tip at a constant substrate potential in order to vary the bias voltage. his variation of potential causes charging currents of the respective electrochemical interfacial layers at substrate electrode surface and tip apex surface, respectively. he time constants for these charging processes are typically slow, and depend on the surface area, i.e., the capacitance. herefore, it is advantageous to vary the potential of the tip apex, since its surface area is much smaller than the electrode substrate area. he arrangement of

Handbook of Nanophysics: Principles and Methods Bipotentiostat tip source

Rtip B

Rtip

source

Ctip Au tip

Electrolyte

dbl

Ctip

Rgap dbl

Csubstrate Au(111)

A

Rsubstrate

source

Csubstrate

source

Rsubstrate Bipotentiostat substrate

FIGURE 14.13 Electronic R/C network of the STM tip/tunneling gap/substrate surface region. he charging currents of the double layer capacitances of tip and substrate contribute to the tunneling current in a VTS measurement, and have to be considered accordingly.

electrode surface, tip apex surface, and gap forms an electrical network (Figure 14.13), which requires special attention, when measuring VTS data. Principal studies of VTS at Au(111) substrates using a Au STM tip are reported in Ref. [73].

14.7 Beyond Electrochemical Processes: In-Situ Electrical Transport Measurements at Individual Nanostructures Besides the two spectroscopy modes DTS and VTS, there is the possibility of formation of quantized contacts between STM tip and substrate surface, or between STM tip and a nanostructure deposited onto a substrate surface, which allow to perform transport measurements (contact spectroscopy, Figure 14.14) [74–76]. he STM tip and the substrate serve as the two terminals in this two-wire measurement. he gentle approach of the STM tip, followed by the formation of a quantized contact, is the best nondestructive method to form a contact with smallest cross-sectional area to a nanostructure. Transport measurements can be performed in-situ with this method, which is a great advantage due to the sensitivity of nanostructures to environmental inluences. he quantized contacts are formed upon jump-to-contact at suiciently small gap widths between STM tip and substrate surface. heir formation can be precisely controlled by the position of the STM tip as shown in Figure 14.15. he individual plateaus

14-13

Electrochemistry and Nanophysics

40

STM-tip (Au)

30 2

10

1

0

0

–10

G/G0

Itip/μA

20

Start at 64.5 mV

–20 –30 Substrate (Au)

–400

–200

0

200

400

Etip – EWE/mV

FIGURE 14.14 Schematic image of the formation of quantized contacts between a STM tip and a substrate surface or nanostructure underneath. he gentle formation of quantized conductance channels may be the best nondestructive method to contact nanostructures for transport measurements.

FIGURE 14.16 Ohmic behavior of quantized contacts as measured by a triangular voltage sweep across the contact as shown in Figure 14.15. (From Hugelmann et al., Surf. Sci., 597, 156, 2005. With permission.)

IWE/μA

20 15 nm

0 –20 G = 3G0

G = 2G0

G = 1G0

G=0

Itip /μA

20 0 –20

FIGURE 14.17 STM image of a 15 nm Au cluster, electrodeposited on n-Si(111), as used for the in-situ transport measurement (current– voltage characteristics) shown in Figure 14.18.

Etip – EWE/mV

400 200 0 –200 –400

–100

–50

0

50

100

Time/ms

FIGURE 14.15 Au conductance channels as formed between Au STM tip and Au(111) substrate surface during variation of the distance between STM tip and substrate surface. An approach of the STM tip toward the substrate surface results in an increase of the number n of conductance channels, a retraction of the STM tip results in a decrease of the number n of conductance channels between STM tip and substrate surface. he constant bias voltage Ubias = Etip − EWE = 64.5 mV results in a constant height of the tip or WE current jumps according to Itip = Ubias × nG 0, with G 0 = (12906 Ω)−1 and n = 1, 2, 3, … . he triangular bias voltage sweep applied at a contact in the state n = 1 results in an ohmic behavior of the quantized contact within the accuracy of the measurement. his allows to use quantized contacts to contact single nanostructures and to study their electronic properties by in-situ current–voltage transport measurements. Potentials are quoted with respect to the standard hydrogen electrode (SHE). (From Hugelmann et al., Surf. Sci., 597, 156, 2005. With permission.)

of the tip current correspond either to a single conductance quantum G0 = (12.9 kΩ)−1 or to multiples of a conductance quantum (n × G0, n = 1, 2, 3,…). While a particular conductance channel is adjusted, for example n = 1 in Figure 14.15, a triangular bias voltage sweep can be applied, which results in a corresponding triangular response of the STM tip current Itip (Figure 14.15, midcurve). he working electrode current is inverted, IWE = −Itip. he conductance channels behave like ohmic contacts (Figure 14.16). An example for the application of this technique at Au nanoclusters (Figure 14.17) is shown in Figure 14.18 for current–voltage measurements at Au/n-Si(111) nanodiodes with diameters of 10–20 nm. he curves represent the forward direction of the nanodiodes, and correspond to the behavior of Schottky barriers between a metal and a semiconductor. All measured nanodiodes show current-voltage characteristics, which may be compatible with the thermionic emission model [76], when the coninement of the space charge layer underneath the metal cluster in the silicon substrate is considered. he voltage drop across quantized contacts is of the order of U = Itip/(nG0). Although the resistance of conductance channels is n × 12.9 kΩ (n = 1, 2, 3,…) typical voltage drops are in the

14-14

Handbook of Nanophysics: Principles and Methods Reverse 106

A = 10–12 cm2

Forward

10–5

C

10–7

104 10–9 10–11

B 100 10–2

I/A

j/A cm–2

102

A = 0.5 cm2

10–2 A

10–4

10–4

10–6

10–6

10–8

10–8 –1.5

–1.0

–0.5 0.0 Ebias = EAu – ESi/V

0.5

1.0

FIGURE 14.18 Current–voltage characteristics of a Au/n-Si(111) Schottky nanodiode, prepared by electrodeposition of a Au cluster with a diameter of 15 nm onto a n-Si(111): H substrate [63]. he current– voltage characteristic has been measured by contacting the Au cluster with a quantized conductance channel by STM and performing subsequently the in-situ transport measurement (curve B, C). he current– voltage characteristics of a macroscopic Au/n-Si(111) Schottky contact (curve A) is plotted for comparison.

millivolt range since currents through nanostructures of crosssectional areas as small as 10−12 cm2 can be assumed to be not larger than microamperes. he voltage drop across the quantized contact can be easily corrected in the measurements since it is linear with the current (Figure 14.16). he size of the quantized contact applied in the measurement of Figure 14.18 is small compared to the 10–20 nm diameter of the nanodiodes. he inluence of this type of contacts on the measurements may become important when the size of the nanostructure measured is comparable to the approximate 1 nm size of the contact.

14.8 Some Technical Aspects of the Application of Scanning Probe Techniques at Solid/ Liquid Interfaces at Sub-Nanometer Resolution 14.8.1 Importance of Nanoelectrode Tip Shape and Surface Quality he detailed shape and the surface morphology of electrochemically etched STM tips, as usually used in STM experiments at solid/liquid interfaces, is rather unreproducible, although a variety of STM tip-etching procedures have been published in the past two decades [77–79]. his can be deduced from numerous

studies of electrochemically etched STM tips by scanning electron microscopy (SEM). Additionally, the surface of electrochemically etched STM tips is in part electrochemically inactive due to etching residuals on the surface, unwanted adsorbates, and oxidized surface areas. his general feature of electrochemically etched tips is usually not at all considered to be a problem if such tips are exclusively used for STM imaging. On the irst view, the detailed shape and electrochemical quality of the STM tip seems to be completely irrelevant for STM imaging of surfaces, because STM imaging assumes the whole tip current measured to be the tunneling current between the two closest adjacent atoms of tip apex and substrate surface forming the tunneling gap. To achieve this, Faraday currents must be minimized by reduction of the electrochemically active tip surface exposed to the electrolyte. Typically, this is achieved by an isolation of the tips with nonconducting material, like Apiezon wax or electrophoretic lacquers, and an electrochemically inactive tip surface even helps to achieve this goal. In fact, when extended atomically lat surfaces are imaged by blunt STM tips still atomically resolved images can be obtained. Diiculties arise when surfaces with a larger height variation shall be imaged at high lateral resolution. A prominent example for such a situation is supported clusters with diameters in the lower nanometer range and heights of several atomic layers. STM images of such clusters show usually no individual atomic layers and step edges [21–23,80], as expected, but rather a hemispherical shape, which results from the convolution of the real shape of the cluster with the actual geometry of the tip apex [81,82]. Unfortunately, this convolution changes both diameter and height of the scanned object, which results in a complicated interpretation of the corresponding STM images. Figure 14.8 shows an example of the high resolution of step edges, which can be achieved at a 15 nm diameter cluster when appropriate STM tips are used. Severe problems arise, however, if electrochemically etched tips shall be used for more advanced purposes. hey would comprise all techniques using the tip for initiation or detection of electrochemical processes on a nanometer scale, i.e., using the tip as a nanoelectrode or as a high resolution electrochemical sensor probe. Such purposes require a well-dei ned tip shape and an electrochemically clean tip surface, which is both usually not the case for electrochemically etched STM tips. In order to combine the requirements for STM imaging, a very small diameter of the tip apex for high lateral resolution, with the requirements for electrochemistry at the STM tip, namely a well-deined geometrical shape and electrochemically clean surface area of the STM tip exposed to the electrolyte, the STM tip preparation can be substantially improved by applying a ield emission/sputtering process subsequently to the electrochemical etching step [57]. Although the mechanisms of electron ield emission and sputtering by ionized ions are known for almost 50 years [83–85], this technique has not been applied routinely for the preparation of STM tips. he basic idea is the fact, that the diameter of a metal tip can be precisely determined by the voltage for ield emission of electrons. his correlation can be exploited to precisely determine the diameter of a STM tip from

14-15

Electrochemistry and Nanophysics φNi = 4.9 eV

φW = 4.55 eV

φAu = 5.1 eV

Iem = 20 nA

Rtip/nm

150

φPt = 5.6 eV

100

50

0

0

1

2

3

4

5

14.8.3 Electronic/Measurement Bandwidth Considerations he acceptable deviation in the actual position of the STM tip, or equivalently in the actual gap width, during a spectroscopic measurement depends on the particular physical problem studied, and on the magnitude of the physical efect measured. In general, it can be supposed that the accuracy of the measured tunneling current should be better than 1%, i.e., the deviation of the actually measured tunneling current from its correct value Itunnel at the correct gap width z should be less than 1%. hen, the allowable deviation Δz of the gap width z from its correct value can be calculated:

Uem/kV

FIGURE 14.19 STM tips prepared in ultrahigh vacuum by a ield emission/sputtering technique. he emission voltage for ield emission in ultrahigh vacuum is a direct measure for the diameter of the STM tip apex. he curves show data at an emission current of 20 nA for Au, W, Ni, and Pt/Ir STM tips. he tip apex diameters have been determined by electron microscopy. (From Schindler, W. and Hugelmann, P., Electrocrystallization in Nanotechnology, G. Staikov, ed., Wiley-VCH, Weinheim, Germany, 2007, p. 117. With permission.)

its ield emission voltage. Figure 14.19 shows this correlation for various STM tips prepared with this technique. It is worth mentioning that STM tips can be produced from nearly any metal wire, in particular also from Au which is oten assumed to be not suitable to form stable and sharp STM tips. Such STM tips with a deined geometrical shape can be modeled in a irst approximation as a sphere of certain diameter, which is typically of the order of 5–30 nm, as proven by transmission electron microscopy (TEM) images [57]. hese STM tips can be used for both purposes, STM imaging as well as localized electrochemistry at the STM tip in-situ in the same experiment.

14.8.2 STM Tip Isolation Most STM investigations at solid/liquid interfaces have been carried out at potential control of both substrate and STM tip, and the STM tip has been only used as a sensor for the tunneling current during STM imaging of surfaces. Since a STM tip current Itip consists at suiciently small distance between tip apex and substrate surface, that is the gap width, of both tunneling current Itunnel and electrochemical (Faraday) currents, STM tips are usually isolated with wax or lacquers, leaving only a small tip apex surface exposed to the electrolyte [86–88]. his ensures that at appropriate STM tip potentials almost the whole STM tip current results from electron tunneling between substrate surface and tip apex, and electrochemical (Faraday) currents are suiciently low. It is obvious that STM imaging works the better the lower the level of Faraday currents is at the particular STM tip potential adjusted. For the purpose of STM imaging, the electrochemically most inactive tip surface is the most desirable surface, because it shows the lowest Faraday currents, and Itip ≈ Itunnel is realized to the best extent.

⎛ 1.01 ⋅ I tunnel ln ⎜ ⎝ I tunnel

⎞ ⎛ z ⎞ ⎟ = ln ⎜ ⎟ − A Φ ⋅ Δz ≈ − A Φ ⋅ Δz ⎝ z + Δz ⎠ ⎠ (14.9)

or Δz ≈ −

ln1.01 = 8 × 10 −4 nm A Φ

(14.10)

taking the value for A from Section 14.6 and a mean value of the tunneling barrier heights in aqueous electrolytes of Φ = 1.5 eV. Typically, the gap width in a STM operating at a solid/liquid interface at room temperature drits with a thermal drit rate of the order of 0.01 nm s−1. A tolerable Δz = 8 × 10−4 nm during a spectroscopic measurement requires then that the measurement time of a complete spectroscopic measurement is kept below Δt =

8 × 10−4 nm = 80 ms 0.01 nm s −1

(14.11)

Allowing for thermal drit rates of 0.1 nm s−1 which are frequently found in day-to-day experimental conditions, the measurement time must be decreased by a factor 10 to approximately 8 ms in the above example for maintaining the presumed 1% accuracy. Spectroscopy can be performed in diferent operation modes of the STM, DTS, and VTS. In VTS, usually linear or triangular bias voltage sweeps as shown in Figure 14.20 are applied across the tunneling gap. Such waveforms can be expressed by a Fourier series of sine waves: n −1

8 I= 2 π

∑ n

(−1) 2 sin nω t with n = 1, 3, 5, … n2

(14.12)

As shown in Figure 14.20, the linear or triangular waveform is the better reproduced the more high order terms of the Fourier series are included in the signal. An accuracy of a linear voltage sweep of better than 1% (see Figure 14.20) requires n = 33, that is, 15 terms of the Fourier series, indicating that a bandwidth of approximately 30 times the fundamental frequency is required. his means for the above example of a total measurement time of Δt = 8 ms, i.e., a frequency of approximately

14-16

Handbook of Nanophysics: Principles and Methods

0

I – I0 (a.u.)

–1 n=1

0.1

n=3

0.0

–0.1

n = 33 0.0

0.2

0.4

0.6

0.8

1.0

t (a.u.)

FIGURE 14.20 Ideal triangular waveform (solid curve) and various Fourier series (calculated using Equation 14.5) with diferent cutof frequencies reproducing the ideal waveform (dashed line: cutof at n = 3; dotted line: cutof at n = 33).

33 × (2 × 8 ms)−1 = 2062.5 Hz must be applied at the STM tip electrode without a signiicant attenuation by the whole measurement system. his requires a 3 dB bandwidth of the measurement system of approximately 20 kHz. he bandwidth requirements become even more demanding, when multiple bias sweeps during a single spectroscopic measurement are desirable for the reason of checking the reproducibility and increasing the statistics of data. In such cases, the limit for the required bandwidth increases proportional to the number of voltage sweeps, for example, by a factor of 10 for 10 subsequent voltage sweeps in a single measurement, resulting for the above example in an essential bandwidth of the measurement system of approximately 200 kHz at a thermal drit rate of 0.1 nm s−1. A measurement system bandwidth of 20 or 200 kHz can be compatible with the electrode capacitance of a STM tip and the time constant resulting from its double layer charging, when certain requirements are fulilled. Typically, surfaces exposed to an electrolyte show a double layer capacity of 25 μC cm−2 [26]. Unisolated STM tip apex surfaces exposed to the electrolyte show typically areas of 10−7 cm2, resulting in capacitances of 2.5 pF. he time constant required for charging these double layer capacitances depends on the charging resistors used. For the case of a charging resistor of 1 MΩ τ = R ⋅ C = 1 MΩ ⋅ 2.5 pF = 2.5 μs.

he desired fast charging of the double layer capacitance requires the bias voltage sweep to be applied at the STM tip electrode rather than at the substrate electrode. Substrate surfaces show usually large areas, resulting in time constants for charging of more than 100 μs, and resulting in efective bandwidths of less than 10 kHz. So far, only the bandwidth necessary for suicient stability and for application of the linear potential sweep of the bias voltage has been considered. However, the purpose of tunneling spectroscopy is to record current variations due to the physical properties of the studied system. An estimation of the bandwidth required for recording changes in the tunneling current, that is in the tunneling resistance across the tunneling gap, with varying bias voltage (in VTS) or with varying gap width (in DTS) can be derived from the following consideration: When a linear bias voltage scan (in VTS) with a scan rate of 100 V s−1 is assumed, that is a scan range of 1 V in 10 ms, the bias voltage is changed by 1 mV in a time interval of 10 μs. When the gap width is changed (in DTS) with a scan rate of 100 nm s−1, that is 1 nm in 10 ms, the gap width is varied by 1 pm in 10 μs. In case of a desired resolution of 1 mV in the I/V spectrum or 1 pm in the current–distance measurement, a jump in the current signal must be recorded within these 10 μs. Similar to linear potential sweeps, current signal jumps can be also represented by Fourier series: I=

8 π2

1

∑ n sin nωt

(14.14)

1.0 n = 33

n = 17

Ideal 0.5

(14.13)

his time constant corresponds to 400 kHz, well above the required bandwidth of 20–200 kHz. However, typical charging resistors in commercial STM I/U converters are 100 MΩ for a conversion factor of 108 V/A. Such high resistances result in time constants corresponding to 4 kHz for charging of the STM tip electrochemical double layer. his is much smaller than the required measurement system bandwidth for a spectroscopic measurement, and special attention must be given to this aspect in the experiments.

with n = 1, 3, 5, …

n

Figure 14.21 shows an ideal jump in the current signal at t = 0 and three Fourier series based on Equation 14.14 with n = 5, 17, and 33. It can be clearly seen that the measurement system must be able to record frequency components around 10 kHz without signiicant attenuation, which requires a 3 dB bandwidth of the measurement system of the order of 100 kHz.

I (a.u.)

I (a.u.)

1

n=5

0.0 –10

0

10

20

30

40

50

t/μs

FIGURE 14.21 Ideal signal jump with ini nite slope and various Fourier series (calculated using Equation 14.7) with diferent cutof frequencies reproducing the ideal waveform (n = 5, 17, or 33, respectively). Fundamental frequency is 1.6 kHz.

Electrochemistry and Nanophysics

Summarizing the above discussion, the most critical parameters for tunneling spectroscopy at solid/liquid interfaces are (1) the thermal drit rate of the tunneling gap width, (2) the time constant required for the electrochemical double layer charging of the STM tip apex surface exposed to the electrolyte, and (3) the response time to changes in the tunneling current. For day-to-day experimental conditions, reliable and reproducible measurements require a 3 dB bandwidth of the measurement system of 20–200 kHz. In principle, the higher the bandwidth of the utilized experimental equipment is, the more precise are the spectroscopic data measured with this equipment.

References 1. G. Moore, IEDM Tech. Dig. 11, 1975. 2. J. Meindl et al., Proceedings of the IEEE 89, No. 3, 2001. 3. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, and J. S. Harris, Appl. Phys. Lett. 68, 34, 1996. 4. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, and J. S. Harris, Appl. Phys. Lett. 76, 239, 2000. 5. C. Z. Li, H. X. He, A. Bogozi, J. S. Bunch, and N. J. Tao, Appl. Phys. Lett. 76, 1333, 2000. 6. C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han, and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003). 7. M. Datta et al., IBM J. Res. Develop. 42 (5) 1998. 8. P. M. Vereecken et al., IBM J. Res. Develop. 49 (1) 2005. 9. H. Rohrer, Nanoscale probes of the solid/liquid interface, in: Proceedings of NATO ASI Sophia Antipolis, France, July 10–20, 1993, A. A. Gewirth and H. Siegenthaler (Eds.), NATO Science Series E, Vol. 288, Kluwer, New York, 1995. 10. G. Binnig and H. Rohrer, Rev. Mod. Phys. 59, 615, 1987. 11. E. Budevski, G. Staikov, and W. J. Lorenz, Electrochemical Phase Formation and Growth, VCH, Weinheim, Germany, 1996. 12. O. M. Magnussen, J. Hotlos, R. J. Nichols, D. M. Kolb, and R. J. Behm, Phys. Rev. Lett. 64, 2929–2932, 1990. 13. D. M. Kolb, Prog. Surf. Sci. 51, 109–173, 1996. 14. M. Wilms, P. Broekmann, C. Stuhlmann, and K. Wandelt, Surf. Sci. 416, 121–140, 1998. 15. W. Li, J. A. Virtanen, and R. M. Penner, Appl. Phys. Lett. 60, 1181, 1992. 16. W. Li, J. A. Virtanen, and R. M. Penner, J. Phys. Chem. 96, 6529, 1996. 17. W. Li, G. S. Hsiao, D. Harris, R. M. Nyfenegger, J. A. Virtanen, and R. M. Penner, J. Phys. Chem. 100, 20103, 1996. 18. R. Schuster, V. Kirchner, X. H. Xia, A. M. Bittner, and G. Ertl, Phys. Rev. Lett. 80, 5599, 1998. 19. Y. Zhang, S. Maupai, and P. Schmuki, Surf. Sci. 551, L33– L39, 2004. 20. R. T. Pötzschke, G. Staikov, W. J. Lorenz, and W. Wiesbeck, J. Electrochem. Soc. 146, 141, 1999. 21. R. Ullmann, T. Will, and D. M. Kolb, Chem. Phys. Lett. 209, 238, 1993. 22. D. M. Kolb, R. Ullmann, and T. Will, Science 275, 1097, 1997.

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23. D. M. Kolb, R. Ullmann, and J. C. Ziegler, Electrochim. Acta 43, 2751, 1998. 24. D. Hofmann, W. Schindler, and J. Kirschner, Appl. Phys. Lett. 73, 3279, 1998. 25. W. Schindler, D. Hofmann, and J. Kirschner, J. Electrochem. Soc. 148, C124, 2000. 26. J. O’M. Bockris and A. K. N. Reddy (Eds.), Modern Electrochemistry, p. 1, Plenum, New York, 1998. 27. W. Schindler and J. Kirschner, Phys. Rev. B 55, R1989, 1997. 28. M. A. Henderson, Surf. Sci. Rep. 46, 273, 2002. 29. W. Schmickler, Surf. Sci. 335, 416, 1995. 30. M. F. Toney, J. N. Howard, J. Richter, G. L. Borges, J. G. Gordon, O. R. Melroy, D. G. Wiesler, D. Yee, and L. B. Sorensen, Nature 368, 444–446, 1994. 31. M. Hugelmann and W. Schindler, Surf. Sci. Lett. 541, L643–L648, 2003. 32. M. Hugelmann, P. Hugelmann, and W. Schindler, J. Electrochem. Soc. 151, E97, 2004. 33. F. C. Simeone, D. M. Kolb, S. Venkatachalam, and T. Jacob, Surf. Sci. 602, 1401, 2008. 34. J. Halbritter, G. Repphuhn, S. Vinzelberg, G. Staikov, and W. J. Lorenz, Electrochim. Acta 40, 1385, 1995. 35. Y. Marcus, Chem. Rev. 88, 1475–1498, 1988. 36. Y. Marcus, Ion Properties, Marcel Dekker, New York, 1997. 37. A. J. Bard, R. Parsons, and J. Jordan (Eds.), Standard Potentials in Aqueous Solution, Marcel Dekker, New York, 1985. 38. A. J. Bard and L. R. Faulkner (Eds.), Electrochemical Methods, Wiley, New York, 2001. 39. R. Christoph, H. Siegenthaler, H. Rohrer, and H. Wiese, Electrochim. Acta 34, 1011–1022, 1989. 40. K. Itaya and E. Tomita, Surf. Sci. 201, L501–L512, 1988. 41. J. Wiechers, T. Twomey, D. M. Kolb, and R. J. Behm, J. Electroanal. Chem. 248, 451–460, 1988. 42. F. A. Möller, O. M. Magnunssen, and R. J. Behm, Phys. Rev. Lett. 77, 5249, 1996. 43. W. J. Lorenz, G. Staikov, W. Schindler, and W. Wiesbeck, J. Electrochem. Soc. 149, K47, 2002. 44. E. C. Walter, B. J. Murray, F. Favier, G. Kaltenpoth, M. Grunze, and R. M. Penner, J. Phys. Chem. 106, 11407, 2002. 45. J. Tang, M. Petri, L. A. Kibler, and D. M. Kolb, Electrochim. Acta 51, 125, 2005. 46. S. Pandelov and U. Stimming, Electrochim. Acta 52, 5548, 2007. 47. C. H. Hamann and W. Vielstich, Elektrochemie I, VCH, Weinheim, Germany, 1985. 48. J. Meier, K. A. Friedrich, and U. Stimming, Faraday. Discuss. 121, 365, 2002. 49. A. J. Bard, F. R. F. Fan, and J. Kwak, Anal. Chem. 61, 132– 138, 1988. 50. A. J. Bard, Scanning Electrochemical Microscopy, Taylor & Francis, Oxon, U.K., 2001. 51. V. Radtke and J. Heinze, Z. Phys. Chem. 218, 103, 2004. 52. O. Sklyar, T. H. Treutler, N. Vlachopoulos, and G. Wittstock, Surf. Sci. 597, 181, 2005.

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53. M. Etienne, E. C. Anderson, S. R. Evans, W. Schuhmann, and I. Fritsch, Anal. Chem. 78, 7317, 2006. 54. W. Schindler, P. Hugelmann, M. Hugelmann, and F. X. Kärtner, J. Electroanal. Chem. 522, 49–57, 2002. 55. M. Eikerling, J. Meier, and U. Stimming, Z. Phys. Chem. 217, 395–414, 2003. 56. D. M. Kolb and F. C. Simeone, Electrochim. Acta 50, 2989, 2005. 57. P. Hugelmann and W. Schindler, J. Electroanal. Chem. 612, 131, 2008. 58. W. Schindler and P. Hugelmann, Localized electrocrystallization of metals by STM tip nanoelectrodes, in: Electrocrystallization in Nanotechnology, G. Staikov (Ed.), p. 117, Wiley-VCH, Weinheim, Germany, 2007. 59. P. Vanysek, CRC Handbook of Chemistry and Physics, D. R. Lide and H. P. R. Frederikse (Eds.), CRC Press, Boca Raton, FL, 1993. 60. S. G. Garcia, D. R. Salinas, C. E. Mayer, W. J. Lorenz, and G. Staikov, Electrochim. Acta 48, 1279, 2003. 61. M. F. Crommie, C. P. Lutz, and D. M. Eigler, Phys. Rev. B 48, 2851–2854, 1993. 62. M. Binggeli, D. Carnal, R. Nyfenegger, H. Siegenthaler, R. Christoph, and H. Rohrer, J. Vac. Sci. Technol. B 9, 1985, 1991. 63. J. Pan, T. W. Jing, and S. M. Lindsay, J. Phys. Chem. 98, 4205, 1994. 64. A. Vaught, T. W. Jing, and S. M. Lindsay, Chem. Phys. Lett. 236, 306, 1995. 65. G. E. Engelmann, J. Ziegler, and D. M. Kolb, Surf. Sci. Lett. 401, L420, 1998. 66. G. Nagy, J. Electroanal. Chem. 409, 19, 1996. 67. W. Kramer, Brillouin relation, in: Quantum Mechanics, A. Messiah (Ed.), North-Holland Publishers, Amsterdam, the Netherlands, 1964. 68. J. K. Gimzewski and R. Möller, Phys. Rev. B 36, 1284–1287, 1987. 69. M. Hugelmann and W. Schindler, J. Electrochem. Soc. 151, E97–E101, 2004. 70. M. Buettiker and R. Landauer, Phys. Rev. Lett. 49, 1739, 1982.

Handbook of Nanophysics: Principles and Methods

71. K. L. Sebastian and G. Doyen, Surf. Sci. Lett. 290, L703, 1993. 72. K. L. Sebastian and G. Doyen, J. Chem. Phys. 99, 6677, 1993. 73. P. Hugelmann and W. Schindler, J. Phys. Chem. B 109, 6262–6267, 2005. 74. M. Hugelmann, P. Hugelmann, W. J. Lorenz, and W. Schindler, Surf. Sci. 597, 156–172, 2005. 75. W. Schindler, M. Hugelmann, and P. Hugelmann, Electrochim. Acta 50, 3077–3083, 2005. 76. M. Hugelmann and W. Schindler, Appl. Phys. Lett. 85, 3608– 3610, 2004. 77. A. J. Melmed, J. Vac. Sci. Technol. B 9, 601, 1991. 78. M. C. Baykul, Mater. Sci. Eng. B 74, 229, 2000. 79. M. Klein and G. Schwitzgebel, Rev. Sci. Instrum. 68, 3099, 1997. 80. S. Maupai, A. S. Dakkouri, M. Stratmann, and P. Schmuki, J. Electrochem. Soc. 150, C111–C114, 2003. 81. N. Breuer, U. Stimming, and R. Vogel, Electrochim. Acta 40, 1401–1409, 1995. 82. W. Schindler, in: he Electrochemical Society Proceedings, Vol. 2003-27: Scanning Probe Techniques for Materials Characterization at Nanometer Scale, W. Schwarzacher and G. Zangari (Eds.), p. 615, he Electrochemical Society, Pennington, NJ, 2003. 83. R. Gomer, Field Emission and Field Ionization, Harvard University Press, Cambridge, MA, 1961. 84. E. W. Müller and T. T. Tsong, Field Ion Microscopy, Elsevier, New York, 1969. 85. K. M. Bowkett and D. A. Smith, Field–Ion–Microscopy, Elsevier, Amsterdam, the Netherlands, 1970. 86. M. J. Heben, M. M. Dovek, N. S. Lewis, and R. M. Penner, J. Microsc. 152, 651–661, 1988. 87. L. A. Nagahara, T. hundat, and S. M. Lindsay, Rev. Sci. Instrum. 60, 3128, 1989. 88. A. A. Gewirth, D. H. Craston, and A. J. Bard, J. Electroanal. Chem. 261, 477–482, 1989.

III Thermodynamics 15 Nanothermodynamics

Vladimir García-Morales, Javier Cervera, and José A. Manzanares ...................................15-1

Introduction • Historical Background • Presentation of State-of-the-Art • Critical Discussion and Summary • Future Perspectives • Acknowledgments • References

16 Statistical Mechanics in Nanophysics Jurij Avsec, Greg F. Naterer, and Milan Marcˇicˇ ............................................16-1 Introduction • Calculation of hermal Conductivity • Calculation of Viscosity in Nanoluids • Calculation of hermodynamic Properties of a Pure Fluid • Conclusions • Nomenclature • References

17 Phonons in Nanoscale Objects Arnaud Devos .............................................................................................................. 17-1 Introduction • Experimental Ways of Investigation • Individual Vibrations • Collective Acoustic Modes • Quantum Dots as Ultrahigh-Frequency Transducer • Conclusion • References

18 Melting of Finite-Sized Systems

Dilip Govind Kanhere and Sajeev Chacko..............................................................18-1

Introduction • heoretical Background • Molecular Dynamics • Data Analysis Tools • Atomic Clusters at Finite Temperature • Summary • Acknowledgments • References

19 Melting Point of Nanomaterials

Pierre Letellier, Alain Mayaf re, and Mireille Turmine.........................................19-1

Introduction • Is the Gibbs hermodynamics Adapted to Describe the Behaviors of Nanosystems? • he Bases of Nonextensive hermodynamics • Application to the Melting Temperature of a Nonextensive Phase • Analyses of Published Data • Conclusion • References

20 Phase Changes of Nanosystems R. Stephen Berry........................................................................................................ 20-1 Introduction • Evidence from Simulation of Bands of Coexistence of Phases of Small Nanoparticles • hermodynamic Interpretation of Bands of Coexisting Phases • Phase Diagrams for Clusters • Observability of Coexisting Phases • Phase Changes of Molecular Clusters • A Surprising Phenomenon: Negative Heat Capacities • Summary • References

21 hermodynamic Phase Stabilities of Nanocarbon Qing Jiang and Shuang Li .........................................................21-1 Introduction • Nanothermodynamics • Phase Equilibria and Phase Diagram of Bulk and Nanocarbon • Solid Transition between Dn and Gn with the Efects of γ and f • Relative Phase Stabilities of Dn, Compared with B, O, and F • Graphitization Dynamics of Dn • Summary and Prospects • Acknowledgments • References

III-1

15 Nanothermodynamics* Vladimir García-Morales Technische Universität München

Javier Cervera University of Valencia

José A. Manzanares University of Valencia

15.1 Introduction ...........................................................................................................................15-1 15.2 Historical Background ..........................................................................................................15-2 15.3 Presentation of State-of-the-Art ..........................................................................................15-2 Surface hermodynamics • Hill’s Nanothermodynamics • Tsallis’ hermostatistics • Superstatistics • Nonequilibrium Approaches

15.4 Critical Discussion and Summary .................................................................................... 15-18 15.5 Future Perspectives..............................................................................................................15-19 Acknowledgments ...........................................................................................................................15-19 References.........................................................................................................................................15-19

15.1 Introduction Progress in the synthesis of nanoscale objects has led to the appearance of scale-related properties not seen or diferent from those found in microscopic/macroscopic systems. For instance, monolayer-protected Au nanoparticles with average diameter of 1.9 nm have been reported to show ferromagnetism while bulk Au is diamagnetic (Hasegawa 2007). Nanotechnology brings the opportunity of tailoring systems to speciic needs, signiicantly modifying the physicochemical properties of a material by controlling its size at the nanoscale. Size efects can be of different types. Smooth size efects can be described in terms of a size parameter such that we recover the bulk behavior when this parameter is large. he physicochemical properties then follow relatively simple scaling laws, such as a power-law dependence, that yield a monotonous variation with size. Speciic size efects, on the contrary, are not amenable to size scaling because the variation of the relevant property with the size is irregular or nonmonotonic. hey are characteristic of small clusters. Finally, some properties are unique for inite systems and do not have an analog in the behavior of the corresponding bulk matter (Jortner and Rao 2002, Berry 2007). Nanothermodynamics can be deined as the study of small systems using the methods of statistical thermodynamics. Small systems are those that exhibit nonextensive behavior and contain such a small number of particles that the thermodynamic limit cannot be applied (Gross 2001). Even though Boltzmann, presumably, did not think of nonextensive systems, his formulation of statistical thermodynamics relied neither on the use of the thermodynamic limit nor on any assumption of extensivity (Gross * Dedicated to Prof. Julio Pellicer on occasion of his retirement.

2001). he same applies to Gibbs ensemble theory, which can also be used to describe the behavior of small systems. However, this is not true for classical thermodynamics, which is based on a number of assumptions that may lead to questioning its validity on the nanoscale. Care must be exercised when applying thermodynamics to nanosystems. First, quantities such as interfacial energy, which could be safely neglected for large systems, must be taken into consideration (Kondepudi 2008). hese and other efects lead to nonextensive character of the thermodynamic potentials. Second, the luctuations of thermodynamic variables about their average values may be so large in a small system that these variables no longer have a clear physical meaning (Feshbach 1988, Mafé et al. 2000, Hartmann et al. 2005). Fluctuations may also lead to violations of the second law of thermodynamics (Wang et al. 2002). hird, quantum efects may also become important (Allahverdyan et al. 2004). In this chapter, we mostly concentrate on Hill’s equilibrium nanothermodynamics. For historical and pedagogical reasons, it is convenient to start the description of size efects in nanosystems using classical equilibrium thermodynamics including interfacial contributions. hus, in Section 15.3.1, it is shown that the smooth size dependence of many thermodynamic properties can be understood without introducing any “new theory.” Similarly, Section 15.3.2 shows that the methods of traditional statistical thermodynamics can be used to describe small systems under equilibrium conditions without the need of introducing signiicantly new ideas. he thermodynamic behavior of small systems is somehow diferent from the macroscopic systems. Particularly important is the fact that luctuations break the equivalence between the diferent statistical ensembles and that the ensemble that accurately describes the interaction between the small system and its surroundings

15-1

15-2

must be used. For some of these interactions, a completely open statistical ensemble, with no macroscopic analogue, must be used. Hill’s nanothermodynamics can be considered as a rigorous formulation of the consequences of nonextensivity, due to the small number of particles composing the system, on the classical thermodynamic equations. It is shown that the new degree of freedom brought about by the nonextensivity of thermodynamic potentials can be conveniently dealt with through the dei nition of a new thermodynamic potential, the subdivision potential. An introduction to modern applications of Hill’s nanothermodynamics is included in order to show that this theory can be applied to metastable states, to interacting small systems, and to describe microscopically heterogeneous systems like glasses and ferromagnetic solids. Hill’s theory can be related to another thermodynamic theory emphasizing nonextensivity—Tsallis’ theory. h is theory is discussed in Section 15.3.3, where the relation between the entropic index q and Hill’s subdivision potential is presented. Similarly, Hill’s theory is related in Section 15.3.4 to superstatistics, a new term coined to emphasize the existence of two diferent statistical probability distributions in complex systems. Finally, Section 15.3.5 describes the most recent ideas on nonequilibrium nanothermodynamics and their relation to luctuation theorems.

15.2 Historical Background he roots of nanothermodynamics go back to the seminal works by J. W. Gibbs and Lord Kelvin in the nineteenth century when the importance of surface contributions to the thermodynamic functions of small systems was realized. hese topics have taken on a new signiicance due to the recent development of nanoscience. During the irst half of twentieth century, there were some interesting contributions to this ield. For instance, the starting point for the kinetic interpretation of condensation phenomena in supersaturated phases, the melting point depression in small metal particles, and the size-dependent chemical potential in the droplet model developed by Becker and Döring (1935). Also, in his theory of liquids, Frenkel (1946) worked out the correction to the thermodynamic functions to extend their validity to small systems. he major contributions have occurred during the second half of twentieth century and the current decade. he formulation of nanothermodynamics as a generalization of equilibrium thermodynamics of macroscopic systems was carried out in the early 1960s. Similar to the introduction of the chemical potential by J. W. Gibbs in 1878 to describe open systems, T. L. Hill (1962) introduced the subdivision potential to describe small systems. Hill anticipated two main classes of applications of nanothermodynamics: (1) as an aid in analyzing, classifying, and correlating equilibrium experimental data on “small systems” such as (noninteracting) colloidal particles, liquid droplets, crystallites, macromolecules, polymers, polyelectrolytes, nucleic acids, proteins, etc.; and (2) to verify, stimulate, and provide a framework for statistical thermodynamic analysis of models of inite systems. he irst computer simulations of hard sphere luids carried out in the late 1950s and early 1960s also showed the importance

Handbook of Nanophysics: Principles and Methods

of size efects. It was soon realized that the diferent statistical ensembles are not equivalent when applied to small systems. A key feature of small systems is that thermodynamic variables may have large luctuations so that only the appropriate ensemble describes correctly the behavior of the system (Chamberlin 2000). Moreover, it was found that the thermodynamic functions of very small systems exhibit a variation with the number of particles that is not only due to the surface contribution and some anomalous efects may also appear (Hubbard 1971). Statistical ensembles whose natural variables are intensive were identiied as the best choice to describe small systems and some speciic tools were developed (Rowlinson 1987). he development of nonextensive thermodynamics based on Tsallis entropy in the 1990s motivated a widespread interest in the modiications of classical thermodynamics for complex systems, including nanosystems. It has been shown recently, however, that Tsallis and Hill’s theories can be mapped onto each other (García-Morales et al. 2005). he interest in Hill’s nanothermodynamics has grown in the 2000s ater realizing that this theory can describe the behavior of a microheterogeneous material, such as a viscous liquid exhibiting complex dynamics or a ferromagnetic material, by considering it as an ensemble of small open systems. hese materials have an intrinsic correlation length, which changes with the temperature. he “small systems” would then be associated to physical regions with a size related to the correlation length. hese small systems would then be completely open, in the sense that they could exchange energy with the bulk material, and vary their volume and number of particles, so that they should be described using the generalized ensemble. Remarkably, Chamberlin has proved that the generalized ensemble of nanothermodynamics with unrestricted cluster sizes yields nonuniform clustering, nonexponential relaxation, and nonclassical critical scaling, similar to the behavior found near the liquid–glass and ferromagnetic transitions (Chamberlin 2003). Besides the progress described above at equilibrium, there were some important developments on nonequilibrium statistical physics during the 1970s and 1980s coming from the modern theory of dynamical systems and the study of thermostated systems as applied to nonequilibrium luids and molecular dynamics simulations (Evans and Morriss 2008). hese developments led during the 1990s to a series of breakthroughs whose impact is today the subject of very active research at the nanoscale: the theoretical prediction (contained in the so-called luctuation theorems), and later experimental observation, of violations of the second law of thermodynamics for small systems and short time scales, and the Jarzynski equality, which allows one to obtain equilibrium free energy diferences from nonequilibrium measurements.

15.3 Presentation of State-of-the-Art 15.3.1 Surface Thermodynamics Most modern developments of thermodynamics of nanosystems involve the introduction of new magnitudes like Hill’s subdivision potential or new equations like Tsallis’ entropy equation, which

15-3

Nanothermodynamics

are sometimes controversial or diicult to accept. On the contrary, surface thermodynamics is still considered a successful framework to analyze thermodynamic properties that show a monotonous variation on the nanoscale (Delogu 2005, Rusanov 2005, Wang and Yang 2005, Jiang and Yang 2008). 15.3.1.1 Unary Systems with Interfaces Classical macroscopic thermodynamics deals with systems composed of one or several bulk homogeneous phases. If their interfaces have deinite shape and size, they can be described using the Gibbs dividing surface model, which associates zero volume and number of particles to the interface of a unary (i.e., monocomponent) system. For a homogeneous phase β, the Gibbs equation is dUβ = TdS β − p βdVβ + μβdn β or, in terms of molar quantities x β ≡ Xβ/nβ (X = S, U, V), duβ = Tdsβ − p βdvβ . From the intensive character of the molar quantities, it can be concluded that phase β satisies the Gibbs–Duhem equation d μ β = − s β dT + v β dp β

(15.1)

If another homogeneous phase α is separated from phase β by an interface σ, the Gibbs equation of the (α + σ) system is

Introducing the energy E ≡ γA(1 − d ln A/d ln n α) and the molar chemical potential μα+σ ≡ μα + γ(dA/dn α), the equations of the (α + σ) system can be transformed to dU α+σ = TdS α+σ − pαdV α + μ α+σdnα

(15.6)

U α +σ − TS α +σ + pαV α = μ α +σnα + E

(15.7)

dE = −S α +σ dT + V α dpα − nα dμ α +σ

(15.8)

It is noteworthy that the energy E only appears in the Euler and Gibbs–Duhem equations and that its value is determined by the relation between A and nα , which depends on the system geometry. Moreover, the Gibbs potential Gα+σ = μα+σ nα + E is bulk nonextensive, that is, G α+σ is not proportional to n α because neither does E. When phase α is a spherical drop of radius r, the conditions dV α = 4πr2dr and dA = 8πrdr = (2/r)dVα are satisied. he mechanical equilibrium condition, (∂F α +β+σ/∂V α )T ,nα ,nβ = 0 , leads to the Young–Laplace equation p α = p β + 2γ/r, and the distribution equilibrium condition, dμα = dμβ with Equations 15.1 and 15.5, requires that (DeHof 2006) (s β − s α )dT − (v β − v α )dpβ + 2γ v α d(1/r ) = 0

dU

α+σ

= TdS

α+σ

α

α

α

α

− p dV + μ dn + γdA

(15.2)

where A is the interfacial area and γ is the interfacial free energy. he internal energy Uα +σ and the entropy S α+σ have a bulk contribution and an interfacial contribution. he volume Vα and the bulk contributions to internal energy and to entropy are bulk extensive variables, and therefore they are proportional to the number of moles n α . he interfacial free energy is independent of the area A, that is, γ is an interfacial intensive variable. he interfacial contributions to internal energy and to entropy are proportional to the interfacial area A, so that they are interfacial extensive variables. he concepts of bulk and interfacial extensivity would only match if A were proportional to n α , which is not generally the case. he Euler and Gibbs–Duhem equations of the (α + σ) system are U α+σ − TS α+σ + pαV α = μ αnα + γA

(15.3)

Adγ = −S α+σdT + V α dp α − nα dμ α

(15.4)

In unary systems, the interfacial variables, xσ ≡ Xσ/A (X = S, U, F), are sσ = −dγ/dT, uσ = γ − Tdγ/dT, and γ = f σ, so that Equation 15.4 reduces to dμ α = − s α dT + v α dpα

(15.5)

where vα ≡ Vα /nα and s α ≡ S α /nα are the molar volume and entropy of phase α.

(15.9)

Equation 15.9 allows us to evaluate the dependence of the thermodynamic properties on the curvature radius r. h is dependence becomes signiicant for the nanoscale and practically disappears for microparticles. 15.3.1.2 Phase Diagrams he inluence of curved interfaces upon the behavior of materials systems is manifested primarily through the shit of phase boundaries on phase diagrams derived from the altered condition of mechanical equilibrium (Defay and Prigogine 1966, DeHof 2006). For a number of substances, the metastable high-pressure phases and even some more dense packing phases do not exist in the bulk state. However, these phases are easily formed at the ambient pressure when the material size decreases to the nanoscale. For instance, in the nucleation stage of clusters from gases during chemical vapor deposition (CVD), the phase stability is quite different from that of the phase diagram that is determined at ambient pressure (Figure 15.1). he high additional internal pressure associated with the interfacial free energy through Young–Laplace equation makes it possible to observe “unusual” phases (Zhang et al. 2004, Wang and Yang 2005). hus, nanodiamond has been found to be more stable than nanographite when the crystal size approaches the deep nanoscale (Yang and Li 2008). 15.3.1.3 Kelvin’s Equation for the Vapor Pressure of a Drop If phase β is the vapor of the condensed phase α, the integration of Equation 15.9 at constant temperature making use of the approximation vα 0 is the bulk molar enthalpy of melting and Tm (r ) = Tm ( p l , r ) < Tm ( p l , ∞) = Tmb , which shows that the spherical particles melt at lower temperature than the corresponding bulk phase. If we consider that this efect is not very large, Equation 15.13 can be transformed to Gibbs–Kelvin equation (Couchman and Jesser 1977) 1−

sl s Tm (r ) 2γ v 1 = Tmb ΔH mb r

(15.14)

Many authors have attempted to predict the theoretical dependence of the melting point on the particle size using diferent thermodynamic approaches. Most studies consider spherical particles and thermodynamic equilibrium conditions between

15-5

Nanothermodynamics

homogeneous bulk-like phases, and deduce equations of the form (Peters et al. 1998) 1−

Tm (r ) 2βm 1 = Tmb ΔH mb ρs r

(15.15)

where ρs is the mass density of the solid and βm is a parameter that depends on the model and is related to the interfacial free energy. Since atomistic features are missing, these models are expected to be valid only when the condensed phases contain at least several atomic layers. he thermodynamic equilibrium condition can be written in terms of the equality of the chemical potentials of the solid and melted particle at the melting point (Bufat and Borel 1976), equality of vapor pressures (Chushak and Bartell 2001), or extremal for the free energy (Vanleet and Mochel 1995). In particular, using the latter type of approaches, Reiss et al. (1988) showed that the condition of equality of chemical potential is incorrect, and the work by Bartell and Chen (1992) added further caveats. Although the 1/r dependence is widely accepted in the case of nanoparticles whose diameter is larger than a few nanometers, at very low radii, some studies have shown that the melting temperature depends nonlinearly on the reciprocal radius (Chushak and Bartell 2000). If we consider even smaller nanoparticles, i.e., atomic clusters, the study of the melting transition is necessarily more complicated not only because of experimental diiculties, but also because the very concept of melting has no meaning for atoms and molecules, and there must be a minimum size of the cluster that allows to classify the state of the atoms as solid- or liquidlike. At low temperatures, the atoms in a cluster make only small amplitude vibrations around a ixed position. At the melting temperature, the motion becomes quite anharmonic. At even higher temperatures, atoms in the cluster can visit neighboring places and start a difusive motion (Schmidt and Haberland 2002). 15.3.1.7 Size Dependence of Interfacial Free Energy he derivation of Equations 15.3 and 15.4 is based on the assumption that the interfacial contribution to the thermodynamic potentials is proportional to the interfacial area A. However, this area is not a good state variable when the particle size is very small and the interfacial variables xσ ≡ Xσ/A are no longer independent of A. his occurs because the approximation of sizeindependent interfacial free energy is not valid for very small particles of, e.g., r < 1 nm in the case of water and metal nuclei (Onischuk et al. 2006). he thermodynamic theory of Tolman (1949) suggests that the interfacial free energy of liquids changes with the droplet radius as γ (r ) =

γ (∞) 1 + 2δ/r

(15.16)

where the Tolman length δ is of the order of 0.1 nm. his size dependence of the interfacial free energy is correlated with the mechanical instability of small objects (Samsonov et al. 2003).

15.3.1.8 Nanocrystalline Solids Most of the results of surface thermodynamics explained above were originally devised with attention to luids, and hence isotropic behavior is assumed. However, many nanomaterials are nonisotropic crystalline solids, like nanoparticles with faceting efects and polycrystalline solids with a nanoscale grain size. hus, for instance, since the shape of grains can be arbitrary, there is no way to relate energy A and nα and the Gibbs– homson–Freundlich equation (Equation 15.11) does not apply to the “nanograins” in polycrystalline solids. he generalization of the formalism of surface thermodynamics to solids is among the achievements in thermodynamics in the twentieth century (Weissmüller 2002).

15.3.2 Hill’s Nanothermodynamics T. L. Hill (Hill 1963) expressed the belief that “he applicability of statistical mechanical ensemble theory to small systems as well as large suggests that a parallel thermodynamics should exist.” In the nanoscale, the systems consist of only several tens to several hundred atoms and this casts some doubts on the statistical meaning of thermodynamic variables. Macroscopic thermodynamics should not be applied to a single small system, but it can be applied to, e.g., a solution of small systems which is considered as a Gibbs “ensemble” of independent small systems. Macroscopic thermodynamic functions are well deined for such a large sample of small systems. he thermodynamic variables of one small system should then be understood as averages over the ensemble of small systems, since it is this ensemble that we observe. his is one of the pillars of Hill’s nanothermodynamics (Hill 1962, 1963, 1964), a theory whose fundamental thermodynamic equations for a small system involve average values of luctuating extensive quantities. Nanothermodynamics provides thermodynamic functions and relations for a single small system, including, in general, variations in the system size. Allowance of these variations in size is, indeed, the important new feature of nanothermodynamics. 15.3.2.1 Subdivision Potential Hill’s theory is a generalization of classical thermodynamics that accounts for size efects via the introduction of a new thermodynamic potential called the subdivision potential E, and its conjugate variable, the number of small systems N. his potential can be positive or negative, depending on the nature of the small systems, and takes into account the energetic contributions usually negligible for macroscopic systems, such as surface efects, system rotation, etc. To understand its meaning, we should compare two composite systems (i = 1 and 2) with the same extensive variables St, Vt and Nt and difering in the number of small systems (N1 ≠ N2). he relation between the extensive variables of a small system and those of the collection of small systems, identiied with a subscript t, is Xi = Xt/Ni, (X = U, S, V, N) (i = 1, 2). In classical thermodynamics, the Euler equations U1 = TS1 − pV1 + μN1 and U2 = TS2 − pV2 + μN2 would lead us to the conclusion that N1U1 = N2U2 or, equivalently, that the two composite systems have the

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Handbook of Nanophysics: Principles and Methods

same energy, Ut1(St, Vt, Nt, N1) = Ut2(St, Vt, Nt, N2), in agreement with the fact that the Gibbs equation, dUt = TdSt − pdVt + μdNt, forbids the variation of Ut while keeping constant St, Vt, and Nt. In nanothermodynamics, on the contrary, it is considered that Ut1(St, Vt, Nt, N1) ≠ Ut2(St, Vt, Nt, N2). he formulation of Hill’s nanothermodynamics is based on the idea that the natural variables of the internal energy Ut are (St, Vt, Nt, N) and that they can be varied independently. hus, the Gibbs equation in nanothermodynamics is dU t = TdSt − pdVt + μdN t + EdN

(15.17)

where, unlike that used in Equations 15.1 through 15.8, the chemical potential μ ≡ (∂U t /∂N t )St ,Vt ,N is deined here per particle. he last two terms in Equation 15.17 bear some similarity, so that the subdivision potential E ≡ (∂U t / ∂N)St ,Vt , Nt is like the chemical potential of a small system; but the energy required to add another identical small system to the ensemble is (∂Ut / ∂N)S,V,N = U ≠ E. Strictly, E is the energy required to increase in one unit the number of subdivisions of the composite system, while keeping constant the total number of particles and other extensive parameters. hat is, Hill’s theory incorporates the possibility that processes taking place in a closed system produce or destroy small systems N (Chamberlin 2002). In classical thermodynamics, the energy Ut is assumed to be a irst-order homogeneous function of its natural variables, that is, Ut is extensive. his leads, for instance, to the Euler equation Gt(T, p, Nt) = Ut − TSt + pVt = μNt. We then say that the intensive state of the system is determined by intensive variables such as T and p, and that Nt determines the size of the system. he extensive character of the thermodynamic potentials like Ut and Gt means that, for a given intensive state, they are proportional to Nt. In nanothermodynamics the energy Ut is also assumed to be a irst-order homogeneous function of all its natural variables, N included. his can be justiied because the composite system is macroscopic and the small systems are noninteractive. herefore, the Euler and Gibbs-Duhem equations take the form U t = TSt − pVt + μN t + EN

(15.18)

NdE = −St dT + Vt dp − N t dμ

(15.19)

The Gibbs and Euler equations can also be presented as dGt = −St dT + Vt dp + μdNt + EdN and Gt (T, p, Nt, N) = μNt + EN. Interestingly, we cannot conclude that Gt is proportional to Nt at constant T, p because Nt and N are independent variables. hat is, Gt is no longer an extensive potential, and the same applies to other potentials like Ut. Dividing Equations 15.18 and 15.19 by N, and remembering that X = Xt/N, the thermodynamic equations for a small system are U = TS − pV + μN + E

(15.20)

dE = − SdT + Vdp − Ndμ

(15.21)

From Equations 15.20 and 15.21, the Gibbs equation for a small system is dU = TdS − pdV + μdN

(15.22)

which turns out to be the same as in classical thermodynamics. In classical thermodynamics, the Gibbs equation can be written in terms of intensive quantities, x = X/N, as du = Tds − pdv, and the chemical potential does not show up in this equation because N is not a natural variable of u. Similarly, the subdivision potential does not show up in Equation 15.22 because N is not a natural variable of U. On the contrary, the subdivision potential appears in Equation 15.17 because N is a natural variable of Ut, in the same way as μ appears in Equation 15.22 because N is a natural variable of U. he Gibbs potential of a small system is G(T, p, N) = μN + E and its Gibbs equation is dG = −SdT + Vdp + μdN. he important point to be noticed is that μ and E can still vary when T and p are kept constant (see Equation 15.21) and therefore we cannot conclude that G is proportional to N. In multicomponent small systems, the Gibbs potential is G = μi N i + E. i he presence of the subdivision potential is characteristic of small systems and evidences the nonextensive character of the Gibbs potential (Gilányi 1999).

∑

15.3.2.2 Relation between Nano, Surface, and Nonextensive Thermodynamics Hill’s nanothermodynamics can describe interfacial contributions in a very natural way; and it can also describe nonextensive contributions of different nature. When the nonextensivity of the thermodynamic potentials arises from interfacial effects, Equations 15.20 through 15.22 would become identical to Equations 15.6 through 15.8 if we choose to dei ne the subdivision potential as E ≡ γA(1 − d ln A/d ln n α), where γ is the interfacial free energy. In relation to Equations 15.6 through 15.8, we should remember that the interfacial quantities are proportional to the interfacial area A, that the bulk extensive quantities are proportional to the number of moles n α of the single component in bulk phase α and, more importantly, that the relation between A and n α depends on the system geometry. If A were directly proportional to n α then the subdivision potential E ≡ γA(1 − d ln A/d ln n α) would vanish. However, this is not generally the case and the subdivision potential then accounts for the interfacial contributions to the thermodynamic potentials. In relation to this, it can be mentioned that some authors present the Gibbs equation in nonextensive thermodynamics as dU = TdS − pdV + μdn + τdχ

(15.23)

where n is the number of moles, μ is the chemical potential (per mole), and τ and χ are the quantities introduced to account for nonextensivity. Equation 15.23 holds a close resemblance to Equations 15.2 and 15.17, so that τ is associated with γ and χ with

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Nanothermodynamics

A in the case of interfacial systems. Letellier et al. (2007a,b) have used Equation 15.23 to derive the Ostwald–Freundlich relation (Equation 15.12) and the Gibbs–Kelvin equation for the melting point depression (Equation 15.13). he magnitudes τ and χ could be used to describe nonextensive contributions other than interfacial, and power laws of the type χ ∝ nm with m ≠ 2/3 can also be used. he value of m becomes thus a free parameter that must be determined by comparison with experiments (Letellier et al. 2007b). 15.3.2.3 Generalized or Completely Open (T, p, μ) Ensemble he extensive character of internal energy and entropy in macroscopic thermodynamics implies that the intensive state of a monocomponent system can be characterized by two variables, e.g., T and p. If we consider a collection of macroscopic small systems, T and p take the same values for a single small system and for the collection of small systems. hese variables contain no information on the size of the small systems. In nonextensive small systems, on the contrary, T and p do vary with system size and we need one additional variable to specify the state of the system. he Gibbs–Duhem equation (Equation 15.21) evidences one of the key features of nanothermodynamics: the intensive parameters T, p, and μ can be varied independently due to the additional degree of freedom brought by nonextensivity. h is enables the possibility of using the completely open or generalized (T, p, μ) statistical ensemble. his ensemble describes the behavior of small systems in which the extensive variables, such as the amount of matter in the system, luctuate under the constraint that intensive variables (T, p, μ) are i xed by the surroundings. he equilibrium probability distribution in the completely open ensemble is pj =

1 −β( E j + pVj −μ N j ) e Y

(15.24)

∑

−β( E + pV −μ N ) where β ≡ 1/kBT and Y (T , p, μ) ≡ e j j j is the generj alized partition function and the sum extends over microstates. Introducing the absolute activity λ ≡ eβμ , this partition function

can also be written as Y (T , p, λ) ≡ with the subdivision potential is

∑

N

E = − kBT ln Y

λ N Ξ(T , p, N ). he relation

15.3.2.4 The Incompressible, Spherical Aggregate, and the Critical Wetting Transition In macroscopic thermodynamics, all the ensembles are equivalent and predict the same values and relations for the thermodynamics potentials and variables. In nanothermodynamics, on the contrary, this is no longer true. he state of the nanosystem is afected by the luctuations in its thermodynamic variables and these are determined by the surroundings, so the statistical description of the nanosystem has to be done using the ensemble that correctly describes the constraints imposed to the nanosystem. We can illustrate this statement by describing a spherical aggregate under two diferent environmental constraints: canonical (T, N) and grand canonical (T, μ). he crystallite is assumed to be incompressible, so that p and V are not state variables; and there is no diference between the Gibbs and Helmholtz potentials, G and F, on the one hand, and the subdivision and grand potentials, E and Ω, on the other hand. Consider irst that each aggregate contains N particles in a volume V. Each particle has an intrinsic partition function z(T) = z′(T)e βε , which also includes the energy of interaction per particle, −ε. he canonical partition function is then Z (T , N ) = z N e −βaN

(15.26)

where aN 2/3 = γA = Fσ is the surface contribution to the free energy of the crystallite. h is partition sum is valid only when N >> 1 (though not macroscopic) since it assumes that it is possible to distinguish a surface and a bulk in the aggregate. he subdivision potential is ⎡ ⎛ ∂ ln Z ⎞ ⎤ 1 2/3 E(T , N ) = G − μN = −kBT ⎢ ln Z − N ⎜ (15.27) ⎥ = aN ⎝ ∂N ⎟⎠ β ⎦ 3 ⎣ In the thermodynamic limit, N → ∞, the surface contribution is negligible and E/N → 0. his result is in agreement with Equation 15.7, since E ≡ γA(1 − d ln A/d ln N) = γ A/3 for spherical particles, A ∝ N 2/3. Note also that, since A = 4π (3V/4π)2/3 and the molar volume in the condensed phase is v l = VNA/N, the relation between parameter a and the interfacial free energy is a = γ π1/3(6vl/NA)2/3. Consider now that the aggregates are in (distribution) equilibrium with a solution of the particles, which i xes T and μ. he generalized partition function Y(T, μ) or Y(T, λ) is

(15.25)

and the Gibbs–Duhem equation (Equation 15.21) allows us to obtain the extensive variables of the small system as S = −(∂E/∂T)p,μ, 〈V〉 = (∂E/∂p)T,μ, 〈N〉 = −(∂E/∂μ)T, p , and U = TS − p〈V〉 + μ〈N〉 + E. When the small systems can be assumed to be incompressible, so that p and V are not state variables, the partition function Y becomes equal to the grand partition function, and the subdivision potential becomes then equal to the grand potential. he generalized ensemble is incompatible with the thermodynamic limit, N → ∞.

2/3

∞

Y (T , λ) =

∑ N =0

∞

Z (T , N )λ N ≈

∑e

−βaN 2/3

(z λ )N

(15.28)

N =0

where λ = e βμ is the absolute activity of the particles. he approximation sign is used because this form of Z(T, N) is expected to be good for relatively large N only. he chemical potential in a bulk liquid is μ∞ = −kBT ln z and the corresponding absolute activity ∞ ∞ is λ = 1/z. If λ > λ the sum diverges and a i nite system is not possible. In order to obtain aggregates of reasonable size we must ∞ choose λ − λ > ∼ 0, that is the aggregate must be approximately in

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Handbook of Nanophysics: Principles and Methods

equilibrium with the bulk liquid; the aggregates could be clusters in a saturated vapor phase in equilibrium with a liquid. But even with a saturated vapor, the aggregate will be sizeable only near the critical temperature, when the interfacial energy is very small, a(T)N 2/3 > 1. he relation between T, p, and μ for the latter is (1 + λz)x = 1, where λ ≡ e βμ is the absolute activity. Similarly, in the grand canonical ensemble the partition sum is Ns

Q(T ,V , μ) =

∑ N !(N

Ns ! (λz )N = (1 + λz )Ns s − N )!

N =0

(15.38)

he macroscopic equilibrium relation between T, p, and μ is again (1 + λz)x = 1, where pressure is determined as p = (kBT / vs) (∂ ln Q / ∂Ns)T, μ . he average number of particles is N λz ⎛ ∂ ln Q ⎞ = s N = λz ⎜ ⎟ ⎝ ∂(λz ) ⎠ T ,V 1 + λz

(15.39)

and its relative luctuation is σN = N

N2 − N

2

=

N

1 ∝ N s λz

1 N

(15.40)

hat is, the luctuations in the number of particles is again normal and vanish when the system becomes macroscopic, which is a consequence of the fact that the extensive variable V is i xed in this ensemble. he subdivision potential is E(T, V, μ) = G − μ 〈N〉 = Ω − pV = 0. Finally, the generalized partition sum is ∞

Y (T , p, μ) =

Ns

Ns !

∑∑ N !(N − N )! x ∞

∑ (1 + λz) Ns =0

(λz )N

s

Ns =0 N =0

=

Ns

Ns

x Ns =

1 1 − (1 + λz )x

(15.41)

15.3.2.6 Micelle Formation Hill’s nanothermodynamics has been applied to study ionic (Tanaka 2004) and nonionic micelles in solution (Hall 1987), as well as to describe polymer–surfactant complex formation (Gilányi 1999). he micellar solution of surfactant is treated as a completely open ensemble of small systems (micelles or polymer–surfactant complexes) dispersed in monomeric solution. he main advantage of the nanothermodynamics approach is that it imposes no restrictions on the distribution of micelles sizes. 15.3.2.7 Reactions Inside Zeolite Cavities and Other Coni ned Spaces Crystalline zeolites with well-deined cavities and pores have long been used in the chemical industry as nanospaces for catalytic reactions. During the last decades, a variety of tailormade “nanoreactors,” with conined nanospaces where selected chemical reactions can take place very eiciently in controlled environments, have been fabricated and studied. he growing research activity in this area is also justiied from the observed increased reactivity in nanospaces. Hill (1963) applied nanothermodynamics to the study of the isomerization reaction in small closed systems and found no difference in the reaction extent from the macroscopic behavior. However, Polak and Rubinovich (2008) have considered other reactions and found a universal coninement efect that explains why the equilibrium constants of exothermic reactions are signiicantly enhanced in conined geometries that contain a small number of reactant and product molecules. he efect is universal in the sense that it has an entropic origin associated to the fact that when the number of molecules is small the Stirling approximation cannot be used to evaluate the number of microstates, that is, it is related to the nonextensivity of the entropy in small systems. 15.3.2.8 Mean-Field Theory of Ferromagnetism

where the condition (1 + λz)x < 1, required for the convergence of the sum, determines when the small system can exist. he subdivision potential is E(T, p, μ) = − kBT ln Y = kBT ln [1 − (1 + λz)x]. From this partition sum the average number of particles is λzx ⎛ ∂ ln Y ⎞ N = λ⎜ = ⎝ ∂λ ⎟⎠ T , x 1 − (1 + λz )x

(Hill and Chamberlin 2002). his example also shows that different ensembles lead to diferent results and stress the importance of choosing the right ensemble for the problem at hand.

(15.42)

and the average number of sites is 〈Ns 〉 = x(∂ ln Y/∂x)T,λ = 〈N〉 (1 + 1/λz). he important result now is that the relative luctuation is σ N / N = (1 − x ) / λzx > 1. he fact that no extensive variable is held constant in the generalized ensemble has an important consequence: since there is no i xed extensive variable that provides some restraint on the luctuations of extensive properties, they are of a larger magnitude than in other ensembles

In the classical mean-ield theory of ferromagnetism, the material is described as a lattice of N particles (or spins) that can have two orientations. Let si = ±1 be the orientation variable of spin i, l be the number of particles in the up state (si = +1), J be the strength of the exchange interaction, and c be the coordination number of the lattice. he average energy per particle within the mean-ield approximation is (Chamberlin 2000)

ε(l, N ) = −

cJ ⎛ l(l − 1) l ⎞ − 4 + 1⎟ 4 2 ⎝⎜ N (N − 1) N ⎠

(15.43)

In the macroscopic limit, N ≥ l >> 1, this equation simpliies

∑

to u ∞(m) = −cJm2/2, where m = (1/N )

N i =1

si = (2l /N ) − 1 is

the average value of the spin orientation variable. In this

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Handbook of Nanophysics: Principles and Methods

limit, the thermodynamic potentials are extensive and the canonical partition sum factorizes, Z ∞(T, N) = [z∞(T)]N

0.1 0.0

2

∞

T/Tc∞ = m /arctanh(m) , and the absolute activity λ ∞ = eβμ = 1 / z ∞

–0.1 u/kBT ∞ c

where z ∞ = 2e −βcJm /2 cosh[βcJm] . Introducing the macroscopic critical temperature Tc∞ ≡ cJ/kB , the relation between T and m under thermodynamic equilibrium conditions is can be presented as λ ∞ (m) = exp[marctanh(m)/2] 1 − m2/2 ,

–0.3

and the entropy per particle is s ∞ (m) / kB = (u ∞ − μ ∞ )/kBT =

(

−marctanh(m) + ln 2 / 1 − m2

).

–0.4

These two functions are

–0.5 0.0

represented together with u∞(m) in Figures 15.2 through 15.4. Note that m = 0 and λ∞ = 0.5 at T ≥ Tc∞ . In the case of inite clusters, the canonical partition sum is Z (T , N ) =

∑ l !(N − l)! e N!

−βN ε(l , N )

(15.44)

l =0

and the equilibrium thermodynamic properties per particle are obtained as λ(T, N) = Z − 1/N, u(T, N) = −(∂ ln Z/∂β)N/N and s(T, N) = [∂(kBT ln Z)/∂T]N /N. hese functions have also been represented in Figures 15.2 through 15.4 for N = 20, 50, and 100. Interestingly, the absolute activity and hence the free energy per particle is lower for inite-size clusters than for a macroscopic sample, and this efect is particularly signiicant for temperatures in the vicinity of Tc∞ . he reduction in free energy mostly

0.5

1.0 T/T ∞ c

2.0

0.7 0.6 0.5 0.4 0.3 0.2 0.1

0.5

0.0 0.0

0.5

0.4

0.5

1.0 T/T ∞c

0.49 0.8

λ∞

λ

0.3

0.9

1.0 0.48

0.45

0.1

0.5

0.8

1.0 T/T ∞ c

1.0 T/T ∞ c 1.5

1.5

2.0

FIGURE 15.4 Entropy per particle in the mean-ield theory for restricted-size inite ferromagnetic cluster with number of particles N = 20 (dot-dashed), 50 (dashed), 100 (dotted), and ∞ (solid line). he residual entropy s(0) = k B ln 2/N appears because of the degeneracy associated to all-up and all-down spin states, and vanishes for macroscopic systems.

0.47

0.2

0.0 0.0

1.5

FIGURE 15.3 Internal energy per particle in the mean-ield theory for restricted-size i nite ferromagnetic cluster with number of particles N = 20 (dot-dashed), 50 (dashed), 100 (dotted), and ∞ (solid line). he classical Weiss transition at Tc∞ is suppressed by i nite-size efects.

s/kB

N

–0.2

1.2

2.0

FIGURE 15.2 Temperature dependence of the absolute activity of ferromagnetic particles in the classical mean-ield theory. In the case of inite-size ferromagnetic clusters, the mean-ield theory predicts a decrease in the absolute activity, which is only noticeable in the vicinity of the macroscopic critical temperature Tc∞. he inset shows the meanield activity for restricted-size i nite cluster with number of particles N = 20 (dot-dashed), 50 (dashed), 100 (dotted), and ∞ (solid line). he gray points in the inset describe the unrestricted-size i nite clusters studied below. Some of them correspond to i xed temperature T = Tc∞ and variable activity λ = 0.47, 0.48, and 0.49; note that λ ∞ (Tc∞ ) = 0.5. he other gray points correspond to i xed activity λ = 0.48 and variable temperature T/Tc∞ = 1.0, 0.9, and 0.8. Finally, the black points mark the i nite-size critical temperatures for λ = 0.48 (Tc /Tc∞ = 0.846), 0.48 (Tc/Tc∞ = 0.788), and 0.47 (Tc /Tc∞ = 0.745); note that λ = λ∞(Tc).

arises from the reduction in internal energy per particle due to fractionation in finite-size clusters. In particular, m = 0 and ∞ u∞ = 0 for T > ∼ Tc under equilibrium conditions but a macroscopic system can decrease its internal energy by subdividing into inite-size clusters, which can then become magnetized ∞ even for T > ∼ Tc . Clusters with unrestricted sizes can be described by the generalized partition sum ∞

Y (T , λ) =

N

∑ λ ∑ l !(NN−! l)! e N

N =2

−β N ε (l , N )

(15.45)

l =0

where λ ≡ eβμ and the sum over particles numbers start at N = 2 to avoid the ill-deined interaction energy of an isolated spin. he probability of inding a cluster of size N is then

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Nanothermodynamics

p(N ,T , λ) =

λN Y (T , λ)

N

∑ l !(NN−! l)! e

−βN ε(l , N )

(15.46)

0.03

l =0

∑

∞

the

N =2

average

cluster

size

is

N = λ(∂ ln Y /∂λ) T =

Np(N ,T , λ ). he generalized partition sum only conN

verges for λ < λ (T), and the average cluster size becomes ∞ increasingly large as λ approaches λ (T). he divergence of the average cluster size is associated to critical behavior and can be used to deine a critical temperature Tc(λ) for unrestricted inite∞ size clusters from the condition λ (Tc) = λ. Figure 15.5 shows ∞ ∞ ∞ p(N ,Tc , λ) for λ (Tc ) − λ = 0.03, 0.02, and 0.01 . Similarly, Figure 15.6 shows p(N, T, 0.48) for T/Tc∞ = 0.8, 0.9, and 1.0 . It is observed that the probability distribution lattens and the average cluster size increases as λ approaches λ ∞ (Tc∞ ) = 0.5 in Figure 15.5 and as T approaches Tc (0.48) = 0.788Tc∞ in Figure 15.6. hus, it is predicted from this theory that 〈N〉 >> 100 near the critical temperature, so that the magnetic order parameter increases rapidly with decreasing temperature near Tc. he subdivision potential is E(T, λ) = −kBT ln Y and the equilibrium thermodynamic properties of clusters with unrestricted sizes can be evaluated as u(T, λ) = −(∂ ln Y/∂β)λ/〈N〉 and s(T, λ) = (u − μ − E/〈N〉)/T. Figures 15.7 and 15.8 show u(T, λ) and s(T, λ) for λ ∞ (Tc∞ ) − λ = 0.01, 0.02, and 0.03. It is remarkable that, by subdividing into clusters with unrestricted sizes, a macroscopic ferromagnet can do both decrease its energy per particle and increase its entropy per particle. It should be remembered that in the case of i xed cluster size (i.e., in the canonical ensemble), the entropy per particle in the vicinity of Tc∞ was s(Tc∞ , N ) < s ∞ (Tc∞ ) = 0. If we denote the entropy per particle obtained from the canonical ensemble for 〈N〉 (T, λ) as s(T, 〈N〉), it can be shown that (Hill 1964) ∞

0.05

p(N, Tc∞, λ)

0.04

0.47

0.48

0.02 0.9

0.8 0.00

0

50

100

150 N

200

250

300

FIGURE 15.6 Probability function p(N, T, 0.48) characterizing the distribution of cluster sizes for λ = 0.48. he curves correspond to temperatures T /Tc∞ = 1.0, 0.9, and 0.8. he size distribution broadens and the average size (marked with the dashed vertical lines) increases when the critical temperature Tc (0.48)/Tc∞ = 0.788 is approached. 0.1 0.50

0.0 –0.1

0.49 0.48 0.47

–0.2 –0.3 –0.4 –0.5 0.0

1.5

1.0 T/Tc∞

0.5

2.0

FIGURE 15.7 Internal energy per particle in the mean-ield theory for unrestricted-size i nite ferromagnetic cluster with absolute activity λ = 0.47, 0.48, and 0.49. he solid line that covers the whole temperature range corresponds to the macroscopic system. he classical Weiss transition at Tc∞ is suppressed by i nite-size efects. ∞

λ = 0.49

⎡⎣ s(T , λ) − s(T , 〈 N 〉)⎤⎦ 〈 N 〉 = −kB

0.03

∑ p(N ,T , λ)ln p(N ,T , λ)

(15.47)

N =2

0.02

0.48

0.01

0.49

0.00

T/Tc∞= 0.8

0.9

0.01

u/kBTc∞

and

p(N, T, 0.48)

1.0

0

20

40

60

80

100

120

140

N

FIGURE 15.5 Probability function p(N , Tc∞ , λ) characterizing the distribution of cluster sizes at temperature T = Tc∞ . he curves correspond to the activity values λ = 0.47, 0.48, and 0.49. he size distribution broadens and the average size (marked with the dashed vertical lines) increases when λ approaches λ ∞ (Tc∞ ) = 0.5 .

hat is, the increased entropy in the generalized ensemble arises from the diferent ways in which the total number of particles can be distributed into clusters of average size 〈N〉. In the previous paragraphs, we have considered a single cluster (or small system) with average size 〈N〉, which may become ini nite at the critical point. Furthermore, the sample can increase its entropy by forming aggregates of indistinguishable clusters. hese aggregates are described by the partition sum (Chamberlin 1999) ∞

Γ(T , λ) =

1

∑ N! ⎡⎣Y (T , λ)⎤⎦ N= 0

N

(15.48)

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Handbook of Nanophysics: Principles and Methods

0.47 0.48

0.8

0.49 0.50

s/kB

0.6

0.4

0.2

0.0

0.0

0.5

1.0 T/Tc∞

1.5

2.0

FIGURE 15.8 Entropy per particle in the mean-ield theory for unrestricted-size finite ferromagnetic cluster with absolute activity λ = 0.47, 0.48, and 0.49. he solid line that covers the whole temperature range corresponds to the macroscopic system.

and the average number of clusters per aggregate is ⎛ ∂ ln Γ ⎞ N =Y⎜ ⎝ ∂Y ⎟⎠ T , λ

(15.49)

In the case of ferromagnetic clusters in the presence of external magnetic ield H, the energy per particle within the mean-ield approximation is l ⎞ ⎛ l ⎞ cJ ⎛ l(l − 1) ε(H , l, N ) = −h ⎜ 2 − 1 ⎟ − ⎜ 4 − 4 + 1⎟ N ⎝ N ⎠ 2 ⎝ N (N − 1) ⎠

(15.50)

where h ≡ μmμ0H, μm is the magnetic moment of the spin and μ0 is the magnetic permeability of vacuum. he generalized partition sum is ∞

Y (T , H , λ) =

N

∑λ ∑ N

N =2

l =0

15.3.2.9 Supercooled Liquids and the Glass Transition N! e −βN ε( H , l , N ) l !(N − l )!

(15.51)

The magnetization of the cluster is 〈M〉 = (μm k BT/V)(∂ ln Y/∂h)T,λ and its magnetic susceptibility is χm = (∂〈 M 〉 /∂H )T ,μ = (μ 0μ 2m kBT / V )(∂2 ln Y / ∂h2 )T, λ . In the absence of external field (H → 0), the average magnetization vanishes above Tc∞ and, therefore, the susceptibility reduces to

χmH →0 (T , λ) = μ 0 μ 2m

=

kBT 1 ⎛ ∂ 2Y ⎞ V Y ⎜⎝ ∂h2 ⎟⎠ T ,λ

μ 0 μ 2m 1 VkBT Y

∞

∞

∑ ∑ λN

N =2

l =0

Two separate theories are oten used to characterize the paramagnetic properties of ferromagnetic materials (Chamberlin 2000). Above the Weiss temperature Θ, classical mean-ield theory yields the Curie–Weiss law for the magnetic susceptibility χm(T) = C/(T − Θ). Close to the Curie or critical temperature Tc, however, the standard mean-ield approach breaks down so that better agreement with experimental data is provided by the critical scaling theory χm(T) ∝ (T − Tc)−γ where γ is a scaling exponent. However, there is no known model capable of predicting either the measured values of γ or its variation among diferent substances. By combining the mean-ield approximation with Hill’s nanothermodynamics, as explained above, the extra degrees of freedom from considering clusters with unrestricted sizes give the correct critical behavior, because the fraction of clusters with a speciic amount of order diverges at Tc. At all temperatures above Tc , the model matches the measured magnetic susceptibilities of crystalline EuO, Gd, Co, and Ni, thus providing a uniied picture for both the critical-scaling and Curie–Weiss regimes (Chamberlin 2000). Interestingly, Equation 15.52 gives a better agreement with experimental results for the entire paramagnetic phase with less itting parameters and without introducing a separate transition temperature and amplitude prefactor for the scaling regime. Furthermore, when the average number of clusters per aggregate 〈N〉 is evaluated from Equation 15.49, the results are also in agreement with measurements of the correlation length in crystalline cobalt. In conclusion, Chamberlin (2000) proved that the critical behavior of ferromagnets can be described by the mean-ield theory, thereby eliminating the need for a separate scaling regime, provided that the clusters are described using the generalized or completely open ensemble because this is the only ensemble that does not artiicially restrict the internal luctuations of a bulk sample.

N !(2l − N )2 −βN ε(H ,l ,N ) e (15.52) l !(N − l)!

he value of the absolute activity λ is determined by comparison with experimental data and typical values are found in the range 0.0006 < λ ∞ (Tc∞ ) − λ < 0.004 (Chamberlin 2000).

Motivated by the close similarity between the Vogel–Tamman– Fulcher (VTF) law for the characteristic relaxation time of supercooled liquids and the Curie–Weiss law of ferromagnetism, Chamberlin (1999, 2002) applied the Weiss mean-ield theory to inite systems with unrestricted sizes, as explained in Section 15.3.2.8, to derive a generalized partition function for supercooled liquids. Finite-size efects broaden the transition and induce a Curie–Weiss-like energy reduction which provides an explanation for the VTF law. Moreover, the distribution of aggregate sizes derived from the generalized partition function of this nanothermodynamic theory provides an explanation for the Kohlrausch–Williams–Watt law. And standard luctuation theory also helps to explain the measured speciic heats.

15.3.3 Tsallis’ Thermostatistics Nonextensivity may appear in systems that are not in the thermodynamic limit because correlations are of the order of the system size, and this can be due to inite size efects, the presence of

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Nanothermodynamics

long-range interactions, the existence of dissipative structures, etc. Tsallis considered that the Boltzmann–Gibbs–Shannon (BGS) entropy is not appropriate to nonextensive behavior and proposed to adopt the Havrda–Charvat structural entropy inspired by the multifractal formalism. Tsallis’ equation for the nonextensive entropy is (Tsallis 2001)

Sq

∑ ≡k

W j =1

pqj − 1

1− q

W

,

∑p =1 j

(15.53)

j =1

where q is a real number known as the entropic index and W is the total number of microstates of the system. he entropic index q characterizes the degree of nonextensivity relected in the following pseudoadditivity rule: Sq ( A + B) = Sq ( A) + Sq ( B) + [(1 − q)/ k] Sq ( A) Sq ( B)

(15.54)

where A and B are two independent systems in the sense that the probabilities of A + B factorize into those of A and of B. Since Sq ≥ 0, the cases q < 1, q = 1, and q > 1 correspond, respectively, to superextensivity, extensivity, and subextensivity. Equation 15.53 is the only entropic form that satisies the nonextensivity rule given in Equation 15.54, in the same way as BGS entropy is the only one that satisies the extensivity rule S(A + B) = S(A) + S(B). he constant, k, in Equation 15.53 difers from Boltzmann’s constant, kB, but reduces to it when q = 1. Moreover, Sq tends to the BGS entropy S = −kB p j ln p j when q = 1. In the microcaj nonical ensemble, all microstates are equally probable, pj = 1/W, and Tsallis’ entropy becomes Sq = k lnqW where lnq is a function called the q-logarithm deined as lnq x ≡ (x1−q − 1)/(1 − q). Its inverse function is the q-exponential eqx ≡ [1 + (1 − q)x]1/(1− q) ln x and the equation lnq (eqx ) = eq q = x is satisied. Obviously, these functions have been introduced to resemble Boltzmann’s expression S = kB ln W, which is the limit of Sq when q = 1. he probability distribution in Tsallis’ statistics is the q-exponential distribution

∑

pj =

where Zq =

∑e j

[1 − (1 − q)βU j ] Zq

−β U j q

1/(1− q )

−β U

=

eq j Zq

(15.55)

dSq =

k

1 dU T

q

+

p d V T

∑

q

U q pV Σ q ln Σ q = + T T 1−q

ln Σ q dSq = U q d

−

q

μ d N T −

μ N

q

q

T

p μ 1 + V qd − N qd T T T

(15.56)

(15.57)

(15.58)

where Σ q ≡ ΣWj =1 pqj = 1 + (1 − q)Sq /k, and X q ≡ (Σ j pqj X j )/Σ q for X = U, V, N. he comparison of these equations with those obtained in Hill’s nanothermodynamics shows that it is possible to connect these two nonextensive formalisms through the relation (García-Morales et al. 2005)

is a generalized canonical partition func-

tion. Equation 15.55 can be obtained by maximizing Equation 15.53 under the constraint that a generalized average energy ⎛ ⎞ U q ≡⎜ pqU j ⎟ pq is i xed. To some extent, Equation ⎝ ⎠ j j j j 15.55 is responsible for the great success that Tsallis’ theory has experienced since it replaces the classical Boltzmann distribution by a family of distributions with a parameter q that can be determined by itting the experimental data (Luzzi et al. 2002). At the same time, this widespread use of q as a itting parameter is one of the major drawbacks of Tsallis’ theory. Phenomena

∑

characterized by the probability distribution in Equation 15.55 abound in nature. his type of statistics may arise from the convolution of the normal distribution with either a gamma or a power-law distribution, the latter being, for instance, a manifestation of the polydispersity of the system. he fact that they can be satisfactorily explained without any assumption of nonergodicity, long-range correlations, or thermodynamic nonequilibrium casts some doubts on the relevance of Tsallis formalism for many systems (Gheorghiu and Coppens 2004). Yet, Tsallis’ entropy has got a place in modern statistical mechanics, which is supported by the growing evidence of its relevance to many complex physical systems and the great success in some of its applications. For instance, the entropic index q has been shown to be intimately related to the microscopic dynamics (Cohen 2002). Furthermore, in systems with fractal phase space, the entropic index q has been shown to be equal to the fractal dimension of the available phase space (GarcíaMorales and Pellicer 2006). h is connection has allowed to interpret unequivocally the observation that q tends to vanish in the strong coupling regime found in ionic solutions, since the available phase space collapses into regions of strikingly lower dimensions when the multivalent ions of the same charge are located close to a highly charged surface and crystallize forming a Wigner crystal (García-Morales et al. 2004). he thermodynamic equations corresponding to Tsallis’ statistics have been deduced by García-Morales et al. (2005) ater work by Vives and Planes (2002) and take the form

E = kT

Σ q ln Σ q − TSq 1−q

(15.59)

Note that when q = 1, the irst term becomes equal to TSq(=TS) and hence E = 0, so that extensivity is recovered. his relation between Hill’s subdivision potential E and Tsallis’ entropic index q may help to clarify the physical foundations of Tsallis’s entropy, and shows that, when the thermodynamic forces are properly deined, Tsallis’ entropy can be used to describe the size-efects on thermodynamic magnitudes.

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Handbook of Nanophysics: Principles and Methods

15.3.4 Superstatistics

∞

In Hill’s theory, the ensemble contain N-independent nanosystems, each of which is in thermal contact with the thermal bath and has a i xed temperature, that of the bath. he energy of every nanosystem ui luctuates, and the same applies to the mean internal energy

u

= N

U

N

N

=

1 N

∫

B(ui ) ≡ f (β)e −βui dβ

where f(β) is the probability distribution of β. he stationary long-term probability distribution is obtained by normalizing this efective Boltzmann factor as

N

∑u

p(ui ) =

(15.60)

i

i =1

B(ui )

∫

∞

0

he probability that the nanosystem i is found in a microstate of energy ui is p(ui ) =

e−β0 ui Z (β0 )

(15.61)

and the joint probability distribution, i.e., the probability that the ensemble is found in the microstate {u1, u2,…, uN} is N

PN(U N ) =

∏ i =1

N

−β u −β U e −β0u1 e −β0u2 ... e −β0un ⎡ e 0 N ⎤ e 0 N ⎥ = p(ui ) = =⎢ Z (β0 ) Z (β0 ) Z (β0 ) ⎢ Z (β0 ) ⎥ ZN (β0 ) ⎣ ⎦

(15.62) which is the usual Boltzmann distribution. An alternative approach proposed by Rajagopal et al. (2006) would be to consider that the temperature of each nanosystem luctuates around the temperature of the reservoir. he Boltzmann parameter β ≡ 1/kBT of a nanosystem would then be a luctuating magnitude and the thermal equilibrium of the ensemble with the bath would only ensure that the ensemble average value of β is determined by the bath, 〈β〉 = β0; (the averaging routine to calculate 〈β〉 is still to be deined). he origin of these luctuations lies in the very same nanosize and thus they come to quasithermodynamic equilibrium with the reservoir. his means that the Boltzmann–Gibbs distribution has to be averaged over the temperature luctuations induced by the reservoir. Recently, this idea has been further developed in diferent physical contexts using a noisy reservoir (Wilk and Wlodarczyk 2000, Beck 2002). When temperature luctuations are taken into account, the probability distribution that replaces that shown in Equation 15.62 can be derived by taking an integral over all possible luctuating (inverse) temperatures. Let us work out this idea in detail starting from the concept of superstatistics (i.e., from the superposition of two diferent statistics) (Beck 2002). If all nanosystems in the ensemble had the same temperature, their probability distribution would be described by ordinary statistical mechanics, i.e., by Boltzmann factors e −βui . However, if the nanosystems difer in temperature, we also need another statistics to describe the ensemble (the Boltzmann statistics e−βui and that of β), hence the name “superstatistics.” One may deine an average Boltzmann factor B(ui) as

(15.63)

0

≡

B(ui )dui

(15.64)

1 B(ui ) Z

which can be considered as the generalization of Equation 15.61. It should be noticed that we have linked the concepts of Hill’s ensemble of nanosystems and the description of temperature luctuations through superstatistics to make clear the limitations of the former. However, the concepts of superstatistics and temperature luctuations can be applied to many other situations. For example, spatiotemporal luctuations in temperature (or in other intensive magnitudes) may arise in driven nonequilibrium system with a stationary state. he diferent spatial regions (cells) with diferent values of β would then play the role of diferent nanosystems. Among all possible probability distributions f(β), there is one that has received much attention. his is the χ2 distribution (also called Γ distribution) and is given by γ 1 (γβ / β ) e Γ( γ ) β

f (β) =

where β =

∫

∞

0

−γβ / β

(15.65)

β f (β)dβ is the average value of β. he parameter 2

γ is a measure of the variance, β2 − β , of the distribution such that ∞

β

2

⎛ 1⎞ = β2 f (β)dβ = ⎜ 1 + ⎟ β γ⎠ ⎝

∫

2

(15.66)

0

and 2

(β − β ) β

2

=

β2 − β β

2

2

=

1 ≥0 γ

(15.67)

he average Boltzmann factor B(ui) corresponding to the χ2 distribution in Equation 15.65 is ∞

B(ui ) =

∫ f (β)e

−βui

dβ =[1 + β ui /γ ]γ

(15.68)

0

Introducing the entropic index as q ≡ 1 + 1/γ, this factor can also be presented as B(ui ) = eq− β ui , which turns out to be the Tsallis distribution corresponding to the average temperature. Hence,

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Nanothermodynamics

it can be concluded that the entropy associated with small systems with temperature luctuations is Tsallis’ entropy. he Boltzmann–Gibbs statistics corresponds to 1/γ = 0 and absence of temperature luctuations. In conclusion, the theory of superstatistics contains Tsallis’ statistics as a particular case that corresponds to the χ2 distribution. he validity of Tsallis’ distributions observed in a large variety of physical systems, many of them in a driven stationary state far from equilibrium, can thus be justiied because the χ2 distribution naturally arises in many circumstances. Since these or similar distributions are oten observed in experiments, it seems justiied to look for dynamical arguments for the occurrence of Tsallis statistics in suitable classes of nonequilibrium systems (Beck 2001). And this is indeed possible: Tsallis statistics can be generated from stochastic diferential equations with luctuating parameters. For many systems, the reason why Tsallis distributions are observed can be related to the fact that there are spatiotemporal luctuations of an intensive parameter (e.g., the temperature). If these luctuations evolve on a long time scale and are distributed according to a particular distribution, the χ2 distribution, one ends up with Tsallis’ statistics in a natural way.

15.3.5 Nonequilibrium Approaches As in macroscopic systems, there exist nonequilibrium steady states with net currents lowing across small systems where physical properties do not display any observable time dependence. For example, a small system in contact with two thermal sources at diferent temperatures has a heat lux as current. Another example is a resistor connected to a voltage source, which has an electric current across it. Such systems require a constant input of energy to maintain their steady state because the systems constantly dissipate net energy and operate away from equilibrium. Most biological systems, including molecular machines and even whole cells, are found in nonequilibrium steady states. Out of a steady state, the most general case, one or more of the system’s properties change in time. he entropy production σ is perhaps the most important fact in nonequilibrium thermodynamics, since it is totally absent in thermostatics. In macroscopic irreversible thermodynamics (de Groot and Mazur 1962), it is usual to look at it as a function of two sets of variables, the thermodynamic luxes {ϕi} and forces {yi}, deined so that the entropy production can be expressed as a sum of products of conjugates, σ =

∑ φ y , the luxes being zero at equilibrium. i

i i

his expression is supplemented by a set of phenomenological relations, which gives the luxes as functions of the forces, these relations being such that the forces cancel at equilibrium. It is an experimental fact that there exists a neighborhood of equilibrium where the relations between the two sets of variables are Lij y j so that σ = Lij y j yi . linear, that is, φ i =

∑

j

∑

i, j

Onsager’s result is the symmetry of the phenomenological coeicients Lij = Lji, proven on the basis of two general

hypothesis: regression of luctuations and microscopic dynamic reversibility (de Groot and Mazur 1962). his implies that the matrix of Onsager coeicients is deinite positive, and, therefore, that entropy production is always a positively dei ned quantity. his situation can change for a nanosystem where violations of the second law for short times have been observed experimentally (Wang et al. 2002). Dissipation and thermal properties out of equilibrium in nanosystems and small times have been the subject of intense research in the last two decades and remarkable rigorous results have been derived that have been found experimentally to hold out of equilibrium. In this section, we summarize some of these results. 15.3.5.1 Jarzynski Equality (JE) C. Jarzynski derived an expression allowing the equilibrium free energy diference ΔF between two conigurations A (initial) and B (inal) of the system to be determined from inite-time measurements of the work W performed in parametrically switching from one coniguration to the other. his result, which is independent of both the path γ from A to B, and the rate at which the parameters are switched along the path, is surprising: It says that we can extract equilibrium information from an ensemble of nonequilibrium (inite-time) measurements. Jarzynski equality reads (Jarzynski 1997a, 1997b) e −βW

χ (t )

= e −βΔF

(15.69)

where χ(t) is the time-dependent protocol specifying the switching between the two conigurations and the brackets denote an average over an ensemble of measurements of W. Each measurement is made ater irst allowing the system and reservoir to equilibrate at temperature T, with parameters i xed at A. (he path in parameter space γ from A to B, and the protocol at which the parameters are switched along this path, remain unchanged from one measurement to the next.) Formally, W is deined by ts

∫

W = dt χɺ 0

∂H χ (z(t )) ∂χ

(15.70)

where z(t) is the mechanical (stochastic) trajectory followed by the system and the dynamical role of χ, a parameter that is tuned externally in the experiments, is clariied. he system’ Hamiltonian Hχ depends explicitly on the latter external parameter. χ varies between 0 (at coniguration A) and 1 (at coniguration B) over a total switching time ts. Now imagine an ensemble of realizations of the switching process (with γ and ts i xed), with initial conditions for the system and reservoir generated from a canonical ensemble at temperature T. hen W may be computed for each trajectory z(t) in the ensemble, and the brackets in Equation 15.69 indicate an average over the distribution of values of W thus obtained. his provides a means for a numerical checking of Equation 15.69. Alternatively W dei ned

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Handbook of Nanophysics: Principles and Methods

by Equation 15.70 can be readily measured in the experiments and then brackets in Equation 15.69 denote the average obtained from the set of measurements. Equation 15.69 holds independently of the path γ. In the limiting case of an ininitely slow switching of the external parameters the system is in quasistatic equilibrium with the reservoir throughout the switching process and Equation 15.69 takes the form 1

∫

ΔF = dχ 0

∂H χ (z(t )) ∂χ

(15.71)

In the opposite limit of ininitely fast switching (ts → 0), the switching is instantaneous and therefore W = ΔH = H1 − H0 in Equation 15.70. Since we have a canonical distribution of initial conditions Equation 15.69 becomes ΔF = −kBT ln e −βΔH

(15.72)

0

Equations 15.71 and 15.72 are well known from previous work (Kirkwood 1935, Zwanzig 1954) and the JE generalizes them to any switching protocol χ(t). “he free energy diference between initial and inal equilibrium states can be determined not just from a reversible or quasistatic process that connects those states, but also via a nonequilibrium, irreversible process that connects them” (Bustamante et al. 2005). his property makes the JE to have enormous practical importance. he exponential average appearing in Equation 15.69 implies that 〈W〉 ≥ ΔF, which, for macroscopic systems, is the statement of the second law of thermodynamics in terms of free energy and work. he Clausius inequality combined with the JE allows relating mean entropy dissipation to experimental observables (Ben-Amotz and Honig 2006). he Carnot engine has been then elegantly shown to emerge as a limiting case of a family of irreversible processes arising from an interface between materials at diferent temperatures. he following expression for the entropy change during an irreversible process has been proposed (Ben-Amotz and Honig 2006) dS =

δWdis T

χ(t )

+ kB ln e −βδWdis

χ(t )

(15.73)

he JE considers processes where the system is driven out of equilibrium by a mechanical external agent while remaining in contact with a thermal reservoir at a i xed temperature. Quite recently, a generalization of the JE to situations where the reservoir drives the system out of equilibrium through temperature changes has also been provided (Williams et al. 2008). he JE has also been extended to quantum systems (Mukamel 2003, Teifel and Mahler 2007). he biophysical relevance of the JE was recently demonstrated through single-molecule experiments carried out under nonequilibrium conditions, which allowed extracting free energy diferences (Hummer and Szabo 2001). he JE was also tested by

mechanically stretching a single molecule of RNA, both reversibly and irreversibly, between its folded and unfolded conformations (Liphardt et al. 2002). 15.3.5.2 Fluctuation Theorems (FTs) he question of how reversible microscopic equations of motion can lead to irreversible macroscopic behavior has been the object of intense work in the last two decades. he luctuation theorem (FT) was formulated heuristically in 1993 for thermostated dissipative nonequilibrium systems (Evans et al. 1993) and gives an answer to the problem of macroscopic irreversibility under reversible microscopic dynamics. he theorem, which was successfully tested in a recent experimental work (Wang et al. 2002), is entirely grounded on the postulates of causality and ergodicity at equilibrium states. Gallavotti and Cohen derived rigorously the FT in 1995 (Gallavotti and Cohen 1995) for thermostated deterministic steady-state ensembles. he authors proved the following asymptotic expression: Pτ (+σ) = eστ Pτ (−σ)

(15.74)

Here Pτ(±σ) is the probability of observing an average entropy production σ on a trajectory of time τ. Equation 15.74 establishes that there is a nonvanishing probability of observing a negative entropy production (thus violating the second law of thermodynamics) which is, however, exponentially small with increasingly longer times compared to the probability of observing a positive entropy production. In small systems (and short-trajectory times), the probability of observing a violation of the second law is, however, signiicant. A FT for stochastic dynamics was also derived (Kurchan 1998, Lebowitz and Spohn 1999, Maes 1999). Other FTs have been reported difering in details on as whether the kinetic energy or some other variable is kept constant, and whether the system is initially prepared in equilibrium or in a nonequilibrium steady state (Evans and Searles 2002). FTs can be of crucial interest for nanosystems and especially for the development of nanoelectronics (van Zon et al. 2004, Garnier and Ciliberto 2005). Another result that connects the FT to the JE was obtained by Crooks (1999) who derived a generalized FT for stochastic microscopic dynamics. Crooks FT, which was experimentally tested in recovering RNA folding free energies (Collin et al. 2005), provides an independent and succinct proof of the JE and has similar practical relevance as the JE. Crooks theorem has been extended to quantum systems in the microcanonical ensemble yielding interesting insights on the concept of nonequilibrium entropy in the quantum regime (Talkner et al. 2008). 15.3.5.3 Thermodynamics Based on the Principle of Least-Abbreviated Action In invoking concepts as microscopic reversibility and deterministic or stochastic trajectories, all works mentioned above point directly to several aspects of the dynamical foundations of

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Nanothermodynamics

statistical thermodynamics. hese were already the concern of Boltzmann and Clausius at the end of the nineteenth century (see Bailyn 1994) and are still open issues. Recently, a dynamical deinition of nonequilibrium entropy based solely in the Hamiltonian dynamics of conservative systems has been introduced (GarcíaMorales et al. 2008). he theory is based on the Maupertuis principle of least-abbreviated action and the deinition of the entropy is of relevance to systems of any size, since it is grounded directly on the Hamiltonian H of the system. Finite-size efects and nonextensivity in small systems are satisfactorily captured by the formulation. he nonequilibrium entropy takes the form ⎛ S = kB ln ⎜ ⎝ where the J i =

∫ p dq i

i

⎞

N

∏ J ⎠⎟

(15.75)

i

i =1

are suitable action variables (qi and pi are,

respectively, generalized position and momenta and the integral extends over the region that bounds each degree of freedom). When all degrees of freedom are separable in the Hamiltonian and the system is integrable, the system remains forever out of equilibrium, since the degrees of freedom cannot thermalize. Under this picture, macroscopic irreversibility is entirely grounded in the nonintegrability of the dynamics coming from complicated interactions between the degrees of freedom that lead to their thermalization. he propagation of the error in using approximate action variables to describe the nonintegrable dynamics of the system is directly linked to the entropy production (García-Morales et al. 2008), which is deined through Hamiltonian mechanics as N

σ = − kB

∑ i =1

1 ∂H J i ∂θi

(15.76)

nonhomogeneous function of the extensive variables. By using Equations 15.73 and 15.78 a statistical deinition can be given to the subdivision potential change ΔE of the nanosystem under an irreversible process (Carrete et al. 2008)

ΔE χ(t ) = T

∑ α

t0

+

yα Xα

In the entropic representation, the thermodynamic equations for the average small system in Hill´s nanothermodynamics are (García-Morales et al. 2005, Carrete et al. 2008) dS =

∑y d X α

(15.77)

α

α

S=

∑y

α

Xα −

α

⎛ E⎞ d ⎜− ⎟ = − ⎝ T⎠

∑X

α

E T dy α

(15.78)

(15.79)

α

he E-dependence of Equations 15.78 (Euler equation) and 15.79 (Gibbs–Duhem equation) makes entropy to be a

dis

χ(t )

0

+ kBT ln e −βδWdis ⎤ ⎦

(15.80)

Nonequilibrium nanothermodynamics (Carrete et al. 2008) follows Hill’s course of reasoning to establish nonequilibrium transport equations in the linear regime that generalize macroscopic irreversible thermodynamics. he key idea is to consider a macroscopic ensemble of nanosystems, with a possible gradient in their number. Assuming that linear macroscopic irreversible thermodynamics holds for the entire ensemble, transport equations can be derived for quantities regarding each nanosystem. The nanoscopic transport coefficients are also found to be symmetric (Carrete et al. 2008), ensuring that the second law of thermodynamics is obeyed by the average systems although it can be transitorily violated by a small system. It is important to note that Hill’s equilibrium nanothermodynamics is consistent with Gibbs dei nition of the equilibrium entropy. Out of equilibrium a link of thermodynamic properties and statistical properties of nanosystems is provided by the Gibbs’ entropy postulate (Reguera et al. 2005):

∫

S = Seq − kB P (γ , t )ln[P(γ , t ) /Peq (γ )]dγ

(15.81)

where Seq denotes the equilibrium Gibbs entropy when the degrees of freedom γ are at equilibrium (where the integrand of the second term in the r.h.s. cancels). he probability distribution at an equilibrium state of a given coniguration in γ-space is given by

where θi are the angle variables conjugate to the Ji, which are present in the Hamiltonian H, making the dynamics of the system nonintegrable. 15.3.5.4 Nonequilibrium Nanothermodynamics

∫ ⎡⎣δW

Peq (γ) ≈ e −βΔW ( γ )

(15.82)

where ΔW(γ) is the minimum reversible work to create such a state. Taking variations of Equation 15.81, we have

∫

δS = −kB δP (γ , t )ln ⎣⎡ P (γ , t ) /Peq (γ )⎦⎤ dγ

(15.83)

he evolution of the probability density in the γ-space is governed by the continuity equation ∂P ∂J =− ∂t ∂γ

(15.84)

where J(γ, t) is a current or density lux in γ-space which has to be speciied. Its form can be obtained by taking the time derivative in Equation 15.83 and by using Equation 15.84. Ater a partial integration, one then arrives at

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Handbook of Nanophysics: Principles and Methods

dS ∂J s =− dγ + σ ∂γ dt

∫

(15.85)

where Js = kB J ln [P/Peq] is the entropy lux and

∫

σ = − kB J ( γ , t )

∂ ln[P (γ , t ) /Peq (γ )] dγ ∂γ

(15.86)

is the entropy production. In this scheme, the thermodynamic forces are identiied as the gradients in the space of mesoscopic variables of the logarithm of the ratio of the probability density to its equilibrium value. By assuming a linear dependence between luxes and forces and establishing a linear relationship between them we have J (γ , t ) = −kB L(γ , P(γ ))

∂ ln[P(γ , t ) /Peq (γ )] ∂γ

(15.87)

where L(γ, P(γ)) is an Onsager coeicient, which, in general, depends on the state variable P(γ) and on the mesoscopic parameters γ. To derive this expression, locality in γ-space is taken into account, and only luxes and forces with the same value of γ become coupled. he resulting kinetic equation follows by substituting Equation 15.87 back into the continuity Equation 15.84: ∂P ∂ ⎛ ∂ P ⎞ = ⎜⎜ DPeq ⎟ ∂t ∂γ ⎝ ∂γ Peq ⎟⎠

(15.88)

where the dif usion coeicient is deined as D( γ ) ≡

kB L(γ, P ) P

(15.89)

By using Equation 15.82, Equation 15.88 can be written as D ∂ΔW ⎞ ∂P ∂ ⎛ ∂P P⎟ = ⎜D + ∂t ∂γ ⎝ ∂γ kBT ∂γ ⎠

(15.90)

which is the Fokker–Planck equation for the evolution of the probability density in γ-space. he dynamics of the probability distribution depends explicitly on equilibrium thermodynamic properties through the reversible work ΔW. his formalism allows to analyze the efects of entropic barriers ΔW = −TΔS in the nonequilibrium dynamics of the system. Entropic barriers are present in many situations, such as the motion of macromolecules through pores, protein folding, and in general in the dynamics of small conined systems (Reguera et al. 2005). As we have seen above, in mesoscopic physics, besides the dif usion processes coming from, for example, mass transport, one inds a difusion process for the probability density of measuring certain values for experimental observables in the space of mesoscopic degrees of freedom γ.

15.4 Critical Discussion and Summary Usually, there is some arbitrariness in all thermostatistical approaches that arise from the diiculty of relating a very limited number of macroscopic variables to an enormous number of microscopic degrees of freedom. he existence of mesoscopic degrees of freedom, like rotation and translation of mesoscopic clusters, pose additional problems since the robustness of the thermodynamic limit is lost, and eicient ways of handling a very complicated and rich dynamics coming from a suiciently high number of degrees of freedom need to be devised. Hill’s nanothermodynamics constitutes an elegant approach whose philosophy, as we have seen, is averaging over the mesoscopic degrees of freedom and over ensembles of mesoscopic systems in order to bridge the mesoscopic dynamics with the macroscopic behavior that might be expected from a huge collection of mesoscopic samples. Although Hill’s nanothermodynamics is based on equilibrium statistical thermodynamics, and hence it is strictly valid only for systems in equilibrium states, it has also proved to be successful in describing metastable states in the liquid–gas phase transition (Hill and Chamberlin 1998). he nanosystems considered in Hill’s ensembles are all identical, and they are all in equilibrium with their surroundings, so that luctuations in intensive parameters such as temperature are neglected. Fluctuations in extensive parameters such as the number of particles in the nanosystem are considered, however, and this makes it useful to describe systems close to phase transitions. Chamberlin has adapted Hill’s theory to treat inite-sized thermal luctuations inside bulk materials (Javaheri and Chamberlin 2006). hus, for example, in the study of supercooled liquids, Chamberlin and Stangel (2006) incorporated the fact that every “small system” was in thermal contact with an ensemble of similar systems, not an ininite external bath, and this yielded a self-consistent internal temperature. Since the direct interactions between the nanosystems are neglected in Hill’s theory, some authors consider that it cannot be applied to systems where local correlations are important. Indeed, the correction terms predicted in Hill’s theory do not depend on temperature, whereas it is well known that correlations become more important the lower the temperature (Hartmann et al. 2004). However, Chamberlin has proved in several systems that interactions can be satisfactorily described using the mean-ield approach when the “small systems” are considered as completely open, like in the generalized ensemble. Furthermore, the use of the partition function Γ describing a collection of completely open small systems somehow also accounts for interactions among small systems, because the small systems are then allowed to vary in size due to a redistribution of the components among the small systems. his partially solves the criticism raised against Hill’s theory. Other formulations valid for nanosystems and systems exhibiting nonextensivity, like Tsallis thermostatistics, can be shown to be related to Hill’s nanothermodynamics (García Morales et al. 2005) and therefore the same considerations apply. Because of the increased importance of the speciicities of the microscopic dynamics out of equilibrium, the problems to lay

15-19

Nanothermodynamics

a general foundation of nonequilibrium nanothermodynamics are much harder than in the equilibrium case. hese diiculties are partially sotened in the linear branch of nonequilibrium thermodynamics, where linear relationships between luxes and thermodynamic forces are expected. Out of this linear branch, nonlinear efects cause couplings between microscopic degrees of freedom and it is a far from a trivial task in many problems to decide which of these degrees of freedom are irrelevant to the collective dynamics or can be accounted for, for example, by means of adiabatic elimination. Despite all these problems, rigorous results of general validity have been derived in the last two decades from which we have given an overview here. hese results include the Jarzynski equality and the luctuation theorems, which can be of enormous interest for the understanding of thermal properties at the nanoscale. We have also pointed out how, in the linear regime of nonequilibrium thermodynamics, the macroscopic approach can be extended to nanosystems both from a thermodynamic and a statistical point of view.

15.5 Future Perspectives Besides the further development of nanothermodynamics, especially of its nonequilibrium branch, there are also some other topics that might likely be of great interest in a near future. Fluctuations play a signiicant role in the thermodynamics of small systems, near critical points, in processes taking place at small time scales, and in nonequilibrium thermodynamics (Lebon et al. 2008). One of the consequences of luctuations is the nonequivalence of statistical ensembles that we have shown above in small systems, and also occurs at critical points and in other systems that are mesoscopically inhomogeneous, like complex luids. A common feature of these systems is that they possess a mesoscopic length scale, known as the correlation length which is associated with luctuations. Finite-size scaling (Bruce and Wilding 1999) is a powerful theoretical approach that has already been applied to small systems (Anisimov 2004) and may yield more interesting results in the near future. he development of thermodynamic concepts at the nanoscale is also of crucial interest for the development of Brownian motors. he dynamical behavior of machines based on chemical principles can be described as a random walk on a network of states. In contrast to macroscopic machines whose function is determined predominately by the connections between the elements of the machine, the function of a Brownian machine in response to an external stimulus is completely speciied by the equilibrium energies of the states and of the heights of the barriers between them. he thermodynamic control of mechanisms will be crucial in the next steps of interfacing synthetic molecular machines with the macroscopic world (Astumian 2007). Interesting thermodynamic ideas that have arisen recently in applied physics and engineering and which might be of interest for nonequilibrium nanosystems are provided by the so-called constructal theory (Bejan 2000, 2006). We have refrained from discussing this theory here because, until now, the applications that it has found concern purely macroscopic systems. However,

an extension of these ideas to nanosystems might have great interest for the engineering of nanodevices and, specially, in the ield of nanoluidics. he heart of constructal theory is contained in what might be arguably considered a new law of thermodynamics (Bejan 2000): “For a inite-size system to persist in time (to live), it must evolve in such a way that it provides easier access to the imposed currents that low through it.” his principle connects global optimization techniques employed in engineering with local constraints and has been extremely successful in providing a foundation for scaling laws found in nature as, for example, the relationship between metabolic rate and body size known as Kleiber’s law, or diferent empirical relationships found in the locomotion of living beings. his principle also connects for the irst time thermodynamics with the occurrence of deinite shapes in nature: it explains, for example, why human beings have a bronchial tree with 23 levels of bifurcation. he constructal theory of the low architecture of the lung predicts and ofers an explanation for the dimensions of the alveolar sac, the total length of the airways, the total alveolar surface area and the total resistance to oxygen transport in the respiratory tree. Further research relating the constructal principle to the microscopic physical dynamics might yield valuable insight for all branches of nanoengineering.

Acknowledgments his research was funded by the European Commission through the New and Emerging Science and Technology programme, DYNAMO STREP, project No. FP6-028669-2. Financial support from the excellence cluster NIM (Nanosystems Initiative München) is also gratefully acknowledged.

References Allahverdyan, A. E., Balian, R., and Nieuwenhuizen, h. M. 2004. Quantum thermodynamics: hermodynamics at the nanoscale. J. Modern Opt. 51: 2703–2711. Anisimov, M. A. 2004. hermodynamics at the meso- and nanoscale. In Dekker Encyclopedia of Nanoscience and Nanotechnology, J. A. Schwarz, C. I. Contescu, and K. Putyera (Eds.), pp. 3893–3904. New York: Marcel Dekker. Astumian, R. D. 2007. Design principles for Brownian molecular machines: How to swim in molasses and walk in a hurricane. Phys. Chem. Chem. Phys. 9: 5067–5083. Bailyn, A. 1994. A Survey of hermodynamics. New York: American Institute of Physics Press. Bartell, L. S. and Chen, J. 1992. Structure and dynamics of molecular clusters. 2. Melting and freezing of carbon tetrachloride clusters. J. Phys. Chem. 96: 8801–8808. Beck, C. 2001. Dynamical foundations of nonextensive statistical mechanics. Phys. Rev. Lett. 87: 180601. Beck, C. 2002. Non-additivity of Tsallis entropies and luctuations of temperature. Europhys. Lett. 57: 329–333. Becker, R. and Döring, W. 1935. Kinetische Behandlung der Keimbildung in übersättingten Dämpfen. Ann. Phys. 24: 719–752.

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Bejan, A. 2000. Shape and Structure: From Engineering to Nature. Cambridge, U.K.: Cambridge University Press. Bejan, A. 2006. Constructal theory of generation of coniguration in nature and engineering. J. Appl. Phys. 100: 041301. Ben-Amotz, D. and Honig, J. M. 2006. Average entropy dissipation in irreversible mesoscopic processes. Phys. Rev. Lett. 96: 020602. Berry, R. S. 2007. he power of the small. Eur. Phys. J. D 43: 5–6. Bruce, A. D. and Wilding, N. B. 1999. Critical-point inite-size scaling in the microcanonical ensemble. Phys. Rev. E 60: 3748–3760. Bufat, Ph. and Borel, J. P. 1976. Size efect on the melting temperature of gold particles. Phys. Rev. A 13: 2287–2298. Bustamante, C., Liphardt, J., and Ritort, F. 2005. he nonequilibrium thermodynamics of small systems. Phys. Today 58: 43–48. Carrete, J., Varela, L. M., and Gallego, L. J. 2008. Nonequilibrium nanothermodynamics. Phys. Rev. E 77: 022102. Chamberlin, R.V. 1999. Mesoscopic mean-ield theory for supercooled liquids and the glass transition. Phys. Rev. Lett. 82: 2520–2523. Chamberlin, R. V. 2000. Mean-ield cluster model for the critical behaviour of ferromagnets. Nature 408: 337–339. Chamberlin, R. V. 2002. Nanoscopic heterogeneities in the thermal and dynamic properties of supercooled liquids. ACS Symp. Ser. 820: 228–248. Chamberlin, R. V. 2003. Critical behavior from Landau theory in nanothermodynamic equilibrium. Phys. Lett. A 315: 313–318. Chamberlin, R. V. and Stangel, K. J. 2006. Monte Carlo simulation of supercooled liquids using a self-consistent local temperature. Phys. Lett. A 350: 400–404. Chushak, Y. G. and Bartell, L. S. 2000. Crystal nucleation and growth in large clusters of SeF6 from molecular dynamics simulations. J. Phys. Chem. A 104: 9328–9336. Chushak, Y. G. and Bartell, L. S. 2001. Melting and freezing of gold nanoclusters. J. Phys. Chem. B 105: 11605–11614. Cohen, E. G. D. 2002. Statistics and dynamics. Physica A 305: 19–26. Collin, D., Ritort, F., Jarzynski, C., Smith, S., Tinoco Jr., I., and Bustamante, C. 2005. Veriication of the Crooks luctuation theorem and recovery of RNA folding free energies. Nature 437: 231–234. Couchman, P. R. and Jesser, W. A. 1977. hermodynamic theory of size dependence of melting temperature in metals. Nature 269: 481–483. Crooks, G. E. 1999. Entropy production luctuation theorem and the nonequilibrium work relation for free-energy diferences. Phys. Rev. E 60: 2721–2726. de Groot, S. R. and Mazur, P. 1962. Non-Equilibrium hermodynamics. Amsterdam, the Netherlands: North-Holland Publishing Co. Defay, R. and Prigogine, I. 1966. Surface Tension and Adsorption. London, U.K.: Longmans. DeHof, R. 2006. hermodynamics in Materials Science. Boca Raton, FL: Taylor & Francis.

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Nanothermodynamics

Hill, T. L. 1962. hermodynamics of small systems. J. Chem. Phys. 36: 153–168. Hill, T. L. 1963. Thermodynamics of Small Systems. Part I. New York: W.A. Benjamin. Hill, T. L. 1964. Thermodynamics of Small Systems. Part II. New York: W.A. Benjamin. Hill, T. L. and Chamberlin, R.V. 1998. Extension of the thermodynamics of small systems to open metastable states: An example. Proc. Natl. Acad. Sci. USA, 95: 12779–12782. Hill, T. L. and Chamberlin, R. V. 2002. Fluctuations in energy in completely open small systems. Nano Lett. 2: 609–613. Hubbard, J. 1971. On the equation of state of small systems. J. Chem. Phys. 55: 1382–1385, and references therein. Hummer, G. and Szabo, A. 2001. Free energy reconstruction from nonequilibrium single-molecule pulling experiments. Proc. Natl. Acad. Sci. USA 98: 3658–3661. Jarzynski, C. 1997a. Nonequilibrium equality for free energy differences. Phys. Rev. Lett. 78: 2690–2693. Jarzynski, C. 1997b. Equilibrium free-energy diferences from nonequilibrium measurements: A master-equation approach. Phys. Rev. E 56: 5018–35. Javaheri, M. R. H. and Chamberlin, R. V. 2006. A free-energy landscape picture and Landau theory for the dynamics of disordered materials. J. Chem. Phys. 125: 154503. Jiang, Q. and Yang, C. C. 2008. Size efect on the phase stability of nanostructures. Curr. Nanosci. 4: 179–200. Jortner, J. and Rao, C. N. R. 2002. Nanostructured advanced materials. Perspectives and directions. Pure Appl. Chem. 74: 1491–1506. Kirkwood, J. G. 1935. Statistical mechanics of fluid mixtures. J. Chem. Phys. 3: 300–313. Kondepudi, D. 2008. Introduction to Modern hermodynamics. New York: Wiley. Kurchan, J. 1998. Fluctuation theorem for stochastic dynamics. J. Phys. A: Math. Gen. 31 3719–3729. Lebon, G., Jou, D., and Casas-Vázquez, J. 2008. Understanding Non-Equilibrium hermodynamics. Berlin, Germany: Springer-Verlag. Lebowitz, J. L. and Spohn, H. 1999. A Gallavotti-Cohen-type symmetry in the large deviation functional for stochastic dynamics. J. Stat. Phys. 95: 333–365. Letellier, P., Mayafre, A., and Turmine, M. 2007a. Solubility of nanoparticles: Nonextensive thermodynamics approach. J. Phys.: Condens. Matter 19: 436229. Letellier, P., Mayafre, A., and Turmine, M. 2007b. Melting point depression of nanoparticles: Nonextensive thermodynamics approach. Phys. Rev. B 76: 045428. Liphardt, J., Dumont, S., Smith, S. B., Tinoco Jr., I., and Bustamante, C. 2002. Equilibrium information from nonequilibrium measurements in an experimental test of Jarzynski’s equality. Science 296: 1832–1835. Luzzi, R., Vasconcellos, A. R., and Galvao Ramos, J. 2002. Trying to make sense out of order. Science 298: 1171–1172. Maes, C. 1999. he luctuation theorem as a Gibbs property. J. Stat. Phys. 95: 367–392.

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Mafé, S., Manzanares, J. A., and de la Rubia, J. 2000. On the use of the statistical deinition of entropy to justify Planck’s form of the third law of thermodynamics. Am. J. Phys. 68: 932–935. Mukamel, S. 2003. Quantum extension of the Jarzynski relation: Analogy with stochastic dephasing, Phys. Rev. Lett. 90:170604. Onischuk, A. A., Purtov, P. A., Bakalnov, A. M., Karasev, V. V., and Vosel, S. K. 2006. Evaluation of surface tension and Tolman length as a function of droplet radius from experimental nucleation rate and supersaturation ratio: Metal vapor homogenous nucleation. J. Chem. Phys. 124: 014506. Peters, K. F., Cohen, J. B., and Chung, Y. W. 1998. Melting of Pb nanocrystals. Phys. Rev. B 57: 13430–13438. Polak, M. and Rubinovich, L. 2008. Nanochemical equilibrium involving a small number of molecules: A prediction of a distinct coninement efect. Nano Lett. 8: 3543–3547. Rajagopal, A. K., Pande, C. S., and Abe, S. 2006. Nanothermodynamics—A generic approach to material properties at nanoscale. In Nano-Scale Materials: From Science to Technology, S. N. Sahu, R. K. Choudhury, and P. Jena (Eds.), pp. 241–248. Hauppauge, NY: Nova Science. Reguera, D., Rubí, J. M., and Vilar, J. M. G. 2005. he mesoscopic dynamics of thermodynamic systems. J. Phys. Chem. B 109: 21502–21515. Reiss, H., Mirabel, P., and Whetten, R. L. 1988. Capillary theory for the coexistence of liquid and solid clusters. J. Phys. Chem. 92: 7241–7246. Rowlinson, J. S. 1987. Statistical thermodynamics of small systems. Pure Appl. Chem. 59: 15–24. Rusanov, A. I. 2005. Surface thermodynamics revisited. Surf. Sci. Rep. 58: 111–239. Samsonov, V. M., Sdobnyakov, N. Yu., and Bazulev, A. N. 2003. On thermodynamic stability conditions for nanosized particles. Surf. Sci. 532–535: 526–530. Schäfer, R. 2003. he chemical potential of metal atoms in small particles. Z. Phys. Chem. 217: 989–1001. Schmidt, M. and Haberland, H. 2002. Phase transitions in clusters. C. R. Physique 3: 327–340. Talkner, P., Hänggi, P., and Morillo, M. 2008. Microcanonical quantum luctuation theorems. Phys. Rev. E 77: 051131. Tanaka, M. 2004. New interpretation of small system thermodynamics applied to ionic micelles in solution and CorrinHarkins equation. J. Oleo Sci. 53: 183–196. Teifel, J. and Mahler, G. 2007. Model studies on the quantum Jarzynski relation. Phys. Rev. E 76: 051126. Tolman, R. C. 1949. he efect of droplet size on surface tension. J. Chem. Phys. 17: 333–337. Tsallis, C. 2001. Nonextensive statistical mechanics and thermodynamics: Historical background and present status. In Nonextensive Statistical Mechanics and Its Applications, S. Abe and Y. Okamoto (Eds.), pp. 3–98. Berlin, Germany: Springer-Verlag. van Zon, R., Ciliberto, S., and Cohen, E. G. D. 2004. Power and heat luctuation theorems for electric circuits. Phys. Rev. Lett. 92: 130601.

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16 Statistical Mechanics in Nanophysics 16.1 Introduction ...........................................................................................................................16-1 16.2 Calculation of hermal Conductivity ................................................................................16-2 Calculation of hermal Conductivity for Pure Fluids • Calculation of hermal Conductivity for Pure Solids • Calculation of hermal Conductivity for Nanoparticles • Results and Comparison with Experimental Data

16.3 Calculation of Viscosity in Nanoluids ..............................................................................16-8 Calculation of Viscosity for Pure Fluid • Calculation of Efective Viscosity for Nanoluids

Jurij Avsec University of Maribor

Greg F. Naterer University of Ontario

Milan Marcˇicˇ University of Maribor

16.4 Calculation of hermodynamic Properties of a Pure Fluid.......................................... 16-11 Revised Cotterman Model (CYJ) • Calculation of hermodynamic Properties of Pure Solids • hermodynamic Properties of Nanoluids • Results and Comparison with Experimental Data

16.5 Conclusions........................................................................................................................... 16-14 Nomenclature................................................................................................................................... 16-14 References......................................................................................................................................... 16-14

16.1 Introduction Billions of years ago, when enormous quantities of energy were released ater the Big Bang, the fundamental particles followed by molecules were formed into complex structures according to certain coincidental events. In the period of several billion years of development, the Earth was also shaped as one of the planets in space, ater which life was created on it. Over time, humans gradually learned how to exploit substances and materials. he ability of making tools and devices distinguished humans from other living beings. Around 400,000 years ago, people were capable of making wooden spears and lances. hey made tools and devices twice their own size. It has always been people’s desire to make ever larger machines and devices. he reason was oten simple: the leaders ruling at the time wanted to be ranked among the immortals. In Egypt, for example, pyramids were constructed in 2600 BC for the needs of the pharaohs, with the tallest being 147 m high (Keops’ pyramid). In 1931, the 449 m tall Empire State Building was built in New York. Currently, the last preparations are underway in Shanghai to construct a 1000 m high housing building. Despite the development of increasingly larger devices, many inventors and scientists wanted to reveal the smallest secrets of micro and nano processes. For centuries, only clock makers worked on a diminishing size of devices. In the seventeenth century, the invention of the microscope opened the way to the observation of microbes, plants, and animal cells. In the late

twentieth century, microdevices were technologically reined. Today, the size of transistors in integrated circuits is 0.18 μm. Transistors measuring 10 nm are already being developed in laboratories. December 29, 1958 is cited as the date of the beginning of micromechanics and nanomechanics, when at the California Institute of Technology, the Nobel prize winner Richard P. Feynman delivered a lecture for the American Physical Association. He introduced a vision of reducing the size of machines to a nanosize. At that time, Professor Feynman could not see the economic implications of the devices made on the basis of nanotechnology. But today, nanomechanics and micromechanics are becoming increasingly important in the industry. he concepts of invisible aircrats, pumps, and so on are now becoming a reality. At the same time, problems have arisen in advanced mechanics, not even dreamt of before. hermodynamic and transport properties of a gas lowing through a tube with the diameter of a few nanometers are modeled completely diferently due to the unusual inluence of surface efects. Even classical hydromechanics is not suicient. In addition to temperature and pressure, the Knudsen number is becoming increasingly important. Euler’s equation gives inaccurate results almost over the entire range: NavierStokes equations at a Knudsen number of 0.1 and Burnett’s equation at a Knudsen number of 10. However, in order to analyze free molecular low in micro and nanochannels, the nonequilibrium

16-1

16-2

Handbook of Nanophysics: Principles and Methods

mechanics and original Boltzmann’s equation must be used. In this case, the computation of hydromechanical problems is possible over the entire range of Knudsen numbers, temperatures, and pressures [1,2]. he term “nanoluid” describes a solid–liquid mixture that consists of nanoparticles and a base liquid. his is one of the new challenges for thermosciences provided by nanotechnology. he possible application area of nanoluids is in advanced cooling systems, micro/nano electromechanical systems, and many others. he investigation of the efective thermal conductivity of liquids with nanoparticles has recently attracted much interest experimentally and theoretically. he efective thermal conductivity of nanoparticle suspensions can be much higher than for a luid without nanoparticles.

⎛η ⎞ λ 0 = 3119.41⎜ 0 ⎟ ψ , ⎝ M⎠

(16.3)

where ψ represents the inluence of polyatomic energy contributions to the thermal conductivity. his term makes use of the Taxman theory, which includes the inluence of internal degrees of freedom on the basis of Weeks, Chandler, Uhlenbeck, and de Boer (WCUB) theory [3] and the approximations provided by Mason and Monschick [3,6]. he inal expression for the inluence of internal degrees of freedom is represented as ⎧ ⎫ * * x ⎪⎨ 0.2665 + ((0.215 − 1.061β)/Zcoll ) + 0.28288(Cint /Zcoll ) ⎪⎬ , ψ = 1 + Cint * /Zcoll ) β + (0.6366 /Zcoll ) + (1.061βCint ⎪⎩ ⎪⎭

(16.4)

16.2 Calculation of Thermal Conductivity 16.2.1 Calculation of Thermal Conductivity for Pure Fluids Accurate knowledge of nonequilibrium and transport properties of pure gases and liquids is essential for the optimum design of equipment in chemical process plants and many other industrial applications [3–6]. It is needed for the determination of intermolecular potential energy functions and development of accurate theories of transport properties in dense luids. Transport coeficients describe the process of relaxation to equilibrium from a state perturbed by the application of temperature, pressure, density, velocity, or composition gradients. he theoretical description of these phenomena constitutes a part of nonequilibrium statistical mechanics that is known as kinetic theory. his chapter will use a Chung–Lee–Starling model (CLS) [4,5]. Equations for the thermal conductivity are developed based on kinetic gas theories and correlated with experimental data. he low-pressure transport properties are extended to luids at high densities by introducing empirically correlated, densitydependent functions. hese correlations use an acentric factor ω, dimensionless dipole moment μr, and empirically determined association parameters to characterize the molecular structure efects of polyatomic molecules κ, polar efects, and the hydrogen bonding efect. New constants for luids are developed in this paper. he dilute gas thermal conductivity for the CLS model is written as λ = λk + λp,

(16.1)

where * is the reduced internal heat capacity at a constant Cint volume β is the dif usion term Z coll is the collision number he heat capacities are calculated by statistical thermodynamics. his chapter features all important contributions (translation, rotation, internal rotation, vibration, intermolecular potential energy, and the inluence of electron and nuclei excitation). he residual part λp of the thermal conductivity can be represented by the following equation: 1/2 1/2 ⎛ ⎛T⎞ 1 ⎞ ⎛T ⎞ B Y 2H 2 ⎜ ⎟ , λ p = ⎜ 0.1272 ⎜ c ⎟ 2/3 ⎟ 7 ⎝ M ⎠ Vc ⎠ ⎝ Tc ⎠ ⎝

(16.5)

where λp is in units of W/m K. 1 ⎧ ⎫ H 2 = ⎨ B1 ⎣⎡1 − exp (− B4Y )⎦⎤ + B2G1 exp (B5Y )+ B3G1 ⎬ Y ⎩ ⎭ ×

1 . B1B4 + B2 + B3

(16.6)

he constants B1–B7 are linear functions of the acentric factor, reduced dipole moment, and the association factor: Bi = b0 (i) + b1(i)ω + b2 (i)μ r4 + b3 (i)κ , i = 1, 10,

(16.7)

where the coeicients b 0, b1, b2, and b3 are presented in an earlier work of Chung et al. [4,5].

16.2.2 Calculation of Thermal Conductivity for Pure Solids [7–11]

where ⎛ 1 ⎞ λ k = λ0 ⎜ + B6Y ⎟ . ⎝ H2 ⎠

(16.2)

he thermal conductivity in the region of dilute gases for the CLS model is written as

16.2.2.1 Electronic Contribution to the Thermal Conductivity he fundamental expression for the electronic contribution λel to the thermal conductivity can be calculated on the basis of the theory of thermal conductivity for a classical gas:

16-3

Statistical Mechanics in Nanophysics

1 λ el = ncel v el lel , 3

(16.8)

where cel is the electronic heat capacity (per electron) n is the number of conduction electrons per volume vel is the electron speed lel is the electron mean free path In Equation 16.8, it is assumed that electrons travel the same average distance before transferring their excess thermal energy to the atoms by collisions. We can express the mean free path in terms of the electron lifetime τ (lel = v Fτ): 2

2 B

π nk T τ λ el = . 3m

(16.9)

Using Drude’s theory [6,7], we can express thermal conductivity as the function of electrical conductivity σe: λ el = σ e LT ,

(16.10)

λ el =

2  nkBT ⎛ ε k − EF ⎞ τ(ε, k ) . ⎜ ⎟ mb ⎝ kBT ⎠

(16.13)

he lifetime for the scattering of electrons by phonons contains quantum-mechanical quantum matrix elements for electron– phonon interaction, and statistical Bose–Einstein and Fermi–Dirac factors for the population of phonon and electron states. A very useful magnitude in this context is the Eliashberg transport coupling function, α tr 2 F (ω). A detailed theoretical expression is derived by Grimwall [9,11]. he Eliashberg coupling function allows us to write the thermal conductivity in the next expression 1 (4 π)2 = λ el L0T ω pl 2

ωmax

∫ 0

ℏω /kBT ⎡ ⎤⎡ ⎤ ⎣ exp ℏω /kBT − 1 ⎦ ⎣1 − exp −ℏω /kBT ⎦

(

)

(

)

2 2 ⎧⎡ ⎫ 1 ⎛ ℏω ⎞ ⎤ 2 3 ⎛ ℏω ⎞ ⎪ ⎪ ⎥ × ⎨ ⎢1 − 2 ⎜ α ω + α tr 2 F (ω)⎬ dω . F ( ) tr ⎟ ⎟ 2 ⎜ ⎝ ⎠ ⎝ ⎠ k T k T π π 2 2 ⎢ ⎥ B B ⎪⎩ ⎣ ⎪⎭ ⎦ (16.14)

We can describe the phonons by an Einstein model:

where L is a temperature-dependent constant. 16.2.2.2 Phonon Contribution to the Thermal Conductivity

α tr 2 F (ω) = Aδ(ω − ω E ),

(16.15)

It is more diicult to determine thermal conductivity when there are nonfree electrons. Solids that obey this rule are called nonmetallic crystals. Because the atoms in a solid are closely coupled together, an increase in temperature will be transmitted to other parts. In modern theory, heat is considered as being transmitted by phonons, which are the quanta of energy in each mode of vibration. We can again use the following expression:

α 2 F (ω) = Bδ(ω − ω E ).

(16.16)

1 λ ph = Cvl . 3

(16.11)

16.2.2.3 Calculation of Electronic Contribution Using Eliashberg Transport Coupling Function Grimwall [9] showed the following analytical expression for the electrical conductivity σ: σe =

 ne 2 τ(ε, k ) , mb

(16.12)

where mb represents the electron band mass τ is an electron lifetime that depends both on the direction of the wave vector k⃗ and the energy distance ε he brackets 〈 〉 describe an average over all electron states. We can also describe the electronic part of thermal conductivity with the help of Equation 16.12:

In Equations 16.15 and 16.16, B and A are constants. With help of Equations 16.15 and 16.16, we can solve the integral in Equation 16.14 as follows: 2 ⎛ T ⎞⎡A ⎛θ ⎞ 1 ⎛ 1 A⎞ ⎤ = kEChar ⎜ ⎟ ⎢ + ⎜ E ⎟ 3 − ⎟ ⎥, 2 ⎜ ⎝ θE ⎠ ⎢ B ⎝ T ⎠ 2π ⎝ λ el B⎠⎥ ⎣ ⎦

(16.17)

where kE represents a constant θE is the Einstein temperature Char represents the lattice heat capacity in the Einstein model: 2

exp(θE/T ) ⎛θ ⎞ Char = 3NkBT ⎜ E ⎟ . ⎝ T ⎠ ⎡exp(θ /T ) − 1⎤ 2 E ⎣ ⎦

(16.18)

Motokabbir and Grimwall [10] discussed Equation 16.17 with A/B as a free parameter with an assumption that A/B ≈ 1. 16.2.2.4 Phonon Contribution to Thermal Conductivity In an isotropic solid, we can express the thermal conductivity as an integral over ω containing the phonon density of states F(ω): λ ph =

N 2 vg 3V

ωmax

∫ τ(ω)C(ω)F(ω) dω , 0

(16.19)

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Handbook of Nanophysics: Principles and Methods

where vg is an average phonon group velocity C is the heat capacity of a single phonon mode the ratio N/V is the number of atoms per volume A relaxation time can be expressed as the ratio of a mean free path to a velocity, so that the thermal conductivity can be expressed as λ ph

N = vg 3V

ω max

∫ l(ω) C(ω)F(ω)dω .

(16.20)

0

he crucial aspect of Equation 16.20 is the determination of relaxation time. If we consider scattering in and out of state 1, we can use quantum mechanics to describe τ(1): 1 2π = τ(1) ℏ 2

∑ 2,3

H (1,2,3) = A

n(2)n(3) H (1,2,3) , n(1) 2

2 2

1/3

ℏ γ Ωa 3MN

ω1ω 2ω 3 , vg2

(16.21)

(16.22)

he evaluation of τ(1) in Equation 16.21 requires a summation over modes 2 and 3. his cannot be done analytically, so it is not possible to give a closed-form expression for the temperature dependence of thermal conductivity at all temperatures. For the low-temperature region (where the temperature is lower than the Debye temperature θD), we have used the following solution: ⎛ θ ⎞ λ ph = λ 0 exp ⎜ − D ⎟ , ⎝ T ⎠

(16.23)

where λ0 is a constant. For the high-temperature region (T >> θD), the solution of Equation 16.23 gives the following result: λ ph =

B M Ωa1/3kB3θD3 , (2π)3 ℏ 3 γ 2T

(16.24)

where B is a dimensionless constant Ωa is the atomic volume γ is the Grüneisen constant

⎪⎧ λ p + (n − 1)λ 0 − (n − 1)α(λ 0 − λ p ) ⎪⎫ λ = λ0 ⎨ ⎬, ⎩⎪ λ p + (n − 1)λ 0 + α(λ 0 − λ p ) ⎭⎪

(16.26)

where λ is the mixture thermal conductivity λ0 is the liquid thermal conductivity λp is the thermal conductivity of solid particles α is the volume fraction n is the empirical shape factor given by n=

3 , ψ

(16.27)

where ψ is sphericity, dei ned as the ratio of the surface area of a sphere (with a volume equal to that of a particle) to the area of the particle. he volume fraction α of the particles is dei ned as α=

Vp π = n dp3 , 6 V0 +Vp

(16.28)

where n is the number of particles per unit volume dp is the average diameter of particles An alternative expression for calculating the effective thermal conductivity of solid–liquid mixtures was introduced by Wasp [34]:

he relation between the Einstein and Debye temperature may be written as θE = (0.72…0.75)θD .

Nanoluids also exhibit superior heat transfer characteristics to conventional heat transfer luids. One of the main reasons is that suspended particles remarkably increase the thermal conductivity of nanoluids. he thermal conductivity of a nanoluid is strongly dependent on the nanoparticle volume fraction. It remains an unsolved problem to develop a precise theory to predict the thermal conductivity of nanoluids. h is chapter calculates the thermal conductivity of a nanoluid analytically. Hamilton and Crosser developed a macroscopic model for the efective thermal conductivity of two-component mixtures as a function of the conductivity of the pure materials, and composition and shape of dispersed particles. he thermal conductivity can be calculated via the following expression [12–34]:

(16.25)

16.2.3 Calculation of Thermal Conductivity for Nanoparticles [11–37] In nanoparticle luid mixtures, other efects such as microscopic motion of particles, particle structures, and surface properties may cause additional heat transfer in nanoluids.

⎪⎧ λ p + 2λ 0 − 2α(λ 0 − λ p ) ⎪⎫ λ = λ0 ⎨ ⎬. ⎩⎪ λ p + 2λ 0 + α(λ 0 − λ p ) ⎭⎪

(16.29)

A comparison between Equations 16.26 and 16.29 shows that the Wasp model is a special case with a sphericity of 1.0 in the Hamilton and Crosser model. From past literature [14–34], we can ind some other models (Maxwell, Jefrey, Davis, Lu-Lin) that give almost identical analytical results. In nanoluids, many possible mechanisms explain the increased efective thermal conductivity:

16-5

Statistical Mechanics in Nanophysics

• • • • •

Inluence of nanolayer thickness Hyperbolic heat conduction Brownian motion Particle driven or thermally driven natural convection Hyperbolic thermal natural convection

where h represents the liquid layer thickness. We have also made the assumption that the equivalent thermal conductivity of the equivalent particles has the same value as the thermal conductivity of a particle. On the basis of these assumptions, we have derived the following new model (RHC) for the thermal conductivity of nanoluids:

16.2.3.1 Inluence of Nanolayer around Nanoparticle he HC model gives very good results for particles larger than 13 nm. For smaller particles, the theory yields inaccurate results with a deviation more than 100% in comparison with experimental results. he theoretical models for the calculation of thermal conductivity for nanoluids are only dependent on the thermal conductivity of the solid and liquid, and their relative volume fraction, but not on particle size and the interface between particles and the luid. For the calculation of efective thermal conductivity, we have used Xue’s theory [35], based on Maxwell’s theory and the average polarization theory. Because the interfacial shells existed between the nanoparticles and the liquid matrix, we can regard both the interfacial shell and nanoparticle as a complex nanoparticle. So the nanoluid system should be regarded as complex nanoparticles dispersed in the luid. We assume that λ is the efective thermal conductivity of the nanoluid, and λc and λm are the thermal conductivities of the complex nanoparticles and the luid, respectively. he inal expression of Xue’s [18] model (X) is expressed by the following equation: ⎛ α ⎞ λ − λ0 9 ⎜1 − ⎟ ⎝ λ r ⎠ 2λ + λ 0 +

α λr

⎡ ⎤ λ − λ c, y λ − λ c, x +4 ⎢ ⎥ = 0, 2λ + (1 − B2, x )(λ c, y − λ) ⎦ ⎣ λ + B2, x (λ c, x − λ e ) (16.30)

λ c, j

(1 − B2, j )λ1 + B2, j λ 2 + (1 − B2, j )λ r (λ 2 − λ1 ) (16.31) . = λ1 (1 − B2, j )λ1 + B2, j λ 2 − B2, j λ r (λ 2 − λ1 )

We assume that a complex nanoparticle is composed of an elliptical nanoparticle with thermal conductivity λ2 with half radii of (a, b, c) and an elliptical shell of thermal conductivity λ1 with a thickness of t. In Equations 16.30 and 16.31, λr represents the spatial average of the heat lux component. For simplicity, we assume that all luid particles are spherical and all nanoparticles are the same rotational ellipsoid. We have used the model of Yu and Choi [23], wherein the nanolayer of each particle could be combined with the particle to form an equivalent particle, and that the particle volume concentration is so low that there is no overlap of equivalent particles. On this basis, we can express the efective volume fraction as follows: 3

⎛ h⎞ αe = α ⎜1 + ⎟ , r⎠ ⎝

(16.32)

⎪⎧ λ pt + (n − 1)λ f − (n − 1)α e (λ f − λ pt ) ⎪⎫ λ = λf ⎨ ⎬. ⎩⎪ λ pt + (n − 1)λ f + α e (λ f − λ pt ) ⎭⎪

(16.33)

16.2.3.2 Hyperbolic Heat Conduction Heat transport in nanoparticles occurs predominantly by electron and crystal vibrations, and it depends on the material. Macroscopic theories assume dif usive heat transport with the following Laplace equation [41]: ρc p

∂T = λ∇2T + qɺ , ∂t

(16.34)

․ where q represents the internal energy source term. From Fourier’s law,   J Q = −λ∇T ,

(16.35)

where JQ is the heat lux. In crystalline nanoparticles, heat is transferred by phonons. Such phonons are created in random, propagating directions, and they are scattered by each other. With the theory of Debye, the mean free path of the phonon is given by [14] lph =

10aTm , γT

(16.36)

where Tm is the melting point a is the lattice constant γ the Grüneisen parameter For typical nanoparticles such as Al2O3 at room temperature, we obtain the result that the mean phonon free path is 35 nm [12]. For this reason, phonons cannot dif use in the 10 nm particles, but must move ballistically across the particle. In metals, the heat is primarily carried by electrons, which also exhibit dif usive motion at the macroscopic level. Due to the Drude formula, we can express the mean electron free path as follows [11]: lel =

9.2rs 2 10 −9 [m], ρel ⎡⎣μΩ cm ⎤⎦

where ρel is the electrical resistivity rs is the dimensionless parameter

(16.37)

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Handbook of Nanophysics: Principles and Methods

For Cu it is lel 350 nm, and for Al it is lel 65 nm. Due to this reason, electrons cannot dif use in the 10 nm particles, but must move ballistically across the particle. It is diicult to demonstrate how ballistic heat transport could be more efective than very fast dif usion transport [24,38]. Hereater we will take into account the ballistic heat transfer phenomena in nanoparticles on the basis of Boltzmann’s law [38]. he ratio between the mean free path, l, and the characteristic length, L, is called the Knudsen number [40]: Kn =

l . L

(16.44)

k 2l12

1 + iωτ1 +

k 2l22

1 + iωτ2 +

1 + iωτ3 +

k 2l32 1 + iωτ4

when we choose ln2 = αn +1l 2 with αn = n2 [(2n + 1)(2n − 1)]−1. his assumption is of interest because it corresponds to a detailed analysis of photon or phonon heat transport [39]. he assumption leads to the following expression:

(16.38)

In nanosystems, the Knudsen number becomes comparable or higher than 1. As a result, the heat transport is no longer diffusive but instead ballistic. In that situation, the usual Fourier law describing dif usive transport must be generalized to cover the transition,

λ(T )

λ(ω, k) =

⎤ 3λ ⎡ Kn ⎛ l⎞ λ ⎜T , ⎟ = −1 . ⎝ L ⎠ Kn2 ⎢⎣ tan −1(Kn) ⎥⎦

(16.45)

For the determination of the efective thermal conductivity due to electron heat transport and depending on Knudsen number, we use the same method as presented in Equation 16.45. 16.2.3.3 Brownian Motion

q=λ

ΔT L

(diffusive transport),

(16.39)

q = ΛΔT (ballistic transport),

(16.40)

where λ represents the thermal conductivity Λ is the heat conduction transport coeicient

In many cases, it is postulated that the enhanced thermal conductivity of a nanoluid is mainly due to Brownian motion, which produces micromixing. Because of the small size of particles in the luids, additional energy terms can arise from motions induced by stochastic (Brownian) and interparticle forces. he motion of particles cause microconvection that enhances heat transfer (Koo and Kleinstreuer [35,36]): λ Brownian = 5 × 104 βαρl cl

he transport phenomena can be solved in diferent ways: • • • •

Direct application of universal Boltzmann equation Application of extended irreversible thermodynamics Application of dual time lag equations Numerical simulations of heat transport on the basis of lattice theory

(16.41)

he limiting behavior of this generalized conductivity to recover expressions in suitable situations should be l ⎛ l⎞ λ ⎜ T , ⎟ → λ(T ) for → 0, ⎝ L⎠ L

(16.42)

l λ(T ) L ⎛ l⎞ λ ⎜T, ⎟ → ≡ Λ(T )L for → ∞, ⎝ L⎠ a l L

(16.43)

(16.46)

f = (−6.04α + 0.4705)T + (1722.3α − 134.63). Kumar et al. [32]: λ Brownian = c

In this chapter, we have focused on the extended irreversible thermodynamics theory: ⎛ l ⎞ ΔT q = λ ⎜T , ⎟ . ⎝ L⎠ L

κT f, ρp D

2kBT . πηdp2

(16.47)

he heat transfer enhancement due to Brownian motion can be estimated with a known temperature of the luid and size of particles. he increase of thermal conductivity due to the rotational and translational motion of spherical particle is modeled by ⎛ 1.17(λ p − λ f )2 (λ p − λ f ) ⎞ 1.5 Pef λ Brownian = λ f α ⎜ + 5(0.6 − 0.028) 2 (λ p + 2λ f )2 ⎟⎠ ⎝ (λ p + 2 λ f ) + (0.0556Pet + 0.1649Pet 2 − 0.0391Pet 3 + 0.0034 Pet 4 )λ f .

(16.48)

where a is a constant depending on the system. On that basis, we obtain the following equation [40] for the determination of real thermal conductivity in all regimes:

Prasher [33]: RePr ⎞ ⎪⎧ λ p + (n − 1)λ 0 − (n − 1)α(λ 0 − λ p ) ⎪⎫ ⎛ λ = λ0 ⎨ , ⎬ ⎜1 + 4 ⎟⎠ ⎩⎪ λ p + (n − 1)λ 0 + α(λ 0 − λ p ) ⎭⎪ ⎝

(16.49)

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Statistical Mechanics in Nanophysics

400

50

350

45 40

300

35

250

30

200

25

le

150

20

Kn

15

100

10

50

Knudsen number (–)

Mean free path (nm)

Mean electron free path and Knudsen number for Cu nanoparticles

5 0

0 283

293

303

313

323

333

343

353

Temperature (K)

FIGURE 16.1 Mean electron free path and Knudsen number for Cu nanoparticles with an average diameter 10 nm. (From Avsec, J., Int. J. Heat Mass Transfer, 51, 4589, 2008.)

1 18kBT , ν πρd

1.5

(16.50)

where ν is the kinematic viscosity of the luid. In our case, we have used the model for Brownian motion from Prasher [33]. We have slightly corrected the Prasher equation into the next expression: ⎪⎧ λ p + (n − 1)λ 0 − (n − 1)α(λ 0 − λ p ) ⎪⎫ m n λ = λ0 ⎨ ⎬ (1 + CRe Pr ), ⎩⎪ λ p + (n − 1)λ 0 + α(λ 0 − λ p ) ⎭⎪ (16.51) where C represents the itting parameter. 16.2.3.4 Experimental Error A majority of experimentalists working on nanoluids have measured the thermal conductivity by using Fourier’s law with the transient hot wire technique. Vadasz et al. [34] showed that the reason of thermal conductivity enhancement is due to experimental inaccuracy.

16.2.4 Results and Comparison with Experimental Data In this section, we will show analytical computations for mixtures of copper nanoparticles and ethylene glycol, and also for a mixture between aluminum oxide (Al2O3) nanoparticles and water. he copper nanoparticles dispersed in the luid are interesting for nanoluid industrial applications due to high thermal conductivity in comparison with copper or aluminum oxides. In our case, we have used experimental results from past literature [15], where copper average nanoparticle diameters are smaller than 10 nm. Figure 16.1 shows the temperature inluence of the electron mean free path and Knudsen number. Figure 16.2 shows the

hermal conductivity ratio (–)

Re =

1.4 1.3

HC A Exp

1.2 1.1 1 0.01

0.02

0.03

0.04

Volume fraction of the Cu nanoparticles

FIGURE 16.2 hermal conductivity of mixture copper nanoparticles + ethylene glycol at various compositions at 303 K. (From Avsec, J. and Oblak, M., Int. J. Heat Mass Transfer, 50, 4331, October 2007.)

analytical calculation of a mixture between ethylene glycol and copper nanoparticles for the thermal conductivity ratio. he results for thermal conductivity obtained by the developed Avsec (A) model show relatively good agreement. he thermal conductivity predicted by a Hamilton–Crosser (HC) model give much lower values than experimental results (Exp). Figure 16.2 is based on the theory that the nanolayer thickness is one of the reasons for heat transfer enhancement. he theory was made on the assumption that the nanolayer thickness is one of the most important contributions [12] in very small nanoparticles (d I

Na

Ne

I

i

∑∑

ZI ZJ e2 | RI − RJ |

ZI e2 + | R I − ri |

Ne −1 N e

e2

∑∑ | r − r | i

j >i

i

j

(18.1)

he irst term is the kinetic energy operator of electrons, Tˆ; the second term is the external potential generated by a collection of nuclei, Vext = ΣiV(ri); the third is the electron–electron Coulomb potential, Vc; and the fourth term is the nuclear–nuclear Coulomb potential, VII. he associated eigenvalue problem is Hˆ Ψ = EΨ, where E is the total energy of the system given as the expectation value of the Hamiltonian Hˆ ; E = 〈Hˆ 〉 = 〈Tˆ 〉 + 〈Vext 〉 + 〈Vc 〉 + 〈VII 〉, and Ψ is the many-body wave function, Ψ ≡ Ψ(r1 , r2 , …, rN e ). Quite clearly this is a formidable problem to solve. We assume the Born–Oppenheimer approximation* and therefore focus on the electronic part keeping the nuclear coordinates i xed. However, we still land up with many-electron problem, which is intractable. his problem was reduced to an efective one-electron problem by Hohenberg, Kohn, and Sham. he essence of their formulation is to replace the interacting electron system by a non-interacting electron systems having the same charge density distribution. hey represented the many* Due to large diference in the masses of nuclei and electrons, their velocities difer by orders of magnitude. he electrons travel much faster than the nuclei and hence it is assumed that the electrons instantaneously follow the motion of the nuclei. h is allows us to separate the electronic and nuclear degrees of freedom and treat them independently. h is approximation is called as the Born–Oppenheimer approximation. Further, the nuclear degrees of freedom are treated classically while the electronic degrees of freedom are treated quantum mechanically.

body wave function as a single Slater determinant from which the electronic charge density is obtained. 18.2.1.1 Hohenberg–Kohn–Sham Formulation In 1964, Hohenberg and Kohn proved two theorems which laid the foundation for reducing the above many-body problem to an efective one-electron problem on rigorous ground (Hohenberg and Kohn, 1964). he irst theorem shows that the external potential, V(r), is uniquely determined by the ground-state electronic charge density.† he second theorem gives a variational principle. It asserts that the ground-state energy regarded as the functional of the charge density attains its minimum value with respect to variation in the charge density when the system is in its ground state, subject to the normalization condition. he result is truly remarkable. It means that the ground-state properties of an interacting electron system are completely determined by the charge density, a simple function of one variable that is real and positive deinite. However, so far, nothing has been said about how to calculate this quantity and the functional form relating to the total energy. Later, in 1965, Kohn and Sham (1965) presented a formulation leading to a practical implementation based on Hohenberg–Kohn theorems. hey proposed an idea of replacing the kinetic energy functional T[ρ] of interacting electrons with that of a non-interacting system having the same ρ. heir formulation led to a set of self-consistent equations now known as Kohn–Sham equations. h is is achieved by introducing a set of variational orbitals into the problem in such a way that the kinetic energy can be computed simply to a good accuracy, leaving small residual correction that is handled separately. In this formulation, the total energy of a system with Ne electrons can be written as E[ρ] = F[ρ] + Vion (r)ρ(r)dr

∫

(18.2)

F[ρ] = T[ρ] + Ec[ρ] + E xc[ρ]

(18.3)

with

where Vion is the external potential due to ionic cores T[ρ] is the kinetic energy of the interacting electron having charge density ρ(r) E c is the Coulomb energy of electrons Exc contains all the omitted efects, i.e., the exchange and correlation efects Apart from the ill-deined exchange–correlation energy, it is the kinetic energy functional that is unknown. Kohn–Sham †

The single-particle electron density ρ(r) is defined as ρ(r1 ) = 2 N e ∫…∫ Ψ(r2 , r3 , …, rN e ) d 3r2d 3r3 …, d 3rN e , where Ne is the total number of electrons in the system. The integration is carried out on all ri s for i = 2 to Ne.

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Handbook of Nanophysics: Principles and Methods

replaced this exact kinetic energy by that of non-interacting electrons having the same charge density and redeined Exc[ρ] as exact Exc[ρ] = Exc [ρ] + T[ρ] − Ts[ρ]

(18.4)

In other words, they incorporate the quantum correction into the exchange–correlation energy term. With this the problem reduced to solving the non-interacting one-electron equations. hus, the Kohn–Sham total energy functional based on densityfunctional theory, where each electron moves in an efective ield due to the rest of the electrons, can be written as a functional of the single particle wave functions ψi, and ionic coordinates R I. his energy functional is given as, E ⎣⎡{ψ i}, {R I}⎦⎤ = Ts ⎣⎡{ψ i}⎦⎤ + E c[ρ] + Eext ⎣⎡ρ, {R I}⎦⎤ + E xc[ρ] + Eion (18.5) where ρ(r) is the electronic charge density given by occ

ρ(r) =

∑ n | ψ (r ) | i

i

2

(18.6)

∫

LDA Exc = ρ(r)⑀(ρ)dr

where ϵ(ρ) is the exchange–correlation energy per particle of a uniform electron gas of density ρ. his approximation has been by and large successful in describing ground-state properties of systems bound by metallic, covalent, or ionic interactions; however, there a few failures too. Considerable progress has been made into improving the exchange–correlation energies by going beyond LDA. A class of potentials based on generalized gradient approximation (GGA) are quite popular. he Exc within the GGA is given by

∫

GGA LDA Exc = Exc + ρ(r) f xc ⎣⎡ρ(r), ∇ρ(r)⎦⎤ dr

Ts =

⎡ ∇2 ⎤

∑ n ∫ ψ* ⎢⎣− 2 ⎥⎦ ψ dr i

i

i

(18.7)

i

where Ts is exact only for the system of non-interacting electrons. he second term is the classical coulomb energy contribution, Ec =

1 2

∫∫

ρ(r)ρ(r ′) dr dr ′ | r − r′ |

(18.8)

he third term is the electron-ion interaction energy,

∫

Eext = Vion (r)ρ(r)dr

(18.11)

he choice of fxc is not unique, and several diferent approximations have been proposed in recent years (Becke, 1996; Lee et al., 2005b; Perdew et al., 1996a,b, 1997). he last term Eion is the coulomb energy contribution from interactions among the ions:

i

where ni is the occupancy of the ith eigenstate, and the sum is over all occupied states. In Equation 18.5, the irst term represents the kinetic energy,

(18.10)

E ion =

∑∑ | R J ≠I

I

ZI ZJ I − RJ |

(18.12)

where ZI denotes the nuclear charge on the Ith nuclei. his term contributes a constant to the total energy for i xed ionic positions but is required to be evaluated when ion dynamics is incorporated. At the minimum, the Kohn–Sham energy functional is equal to the ground-state energy of the system of electrons and ions. It is necessary to determine the set of functions ψi that minimize the Kohn–Sham energy functional. By following variational procedure, we get a set of equations known as Kohn–Sham equations: ⎡ ∇2 ⎤ + Veff (r )⎥ ψ i (r ) = ⑀i ψ i (r ) ⎢− 2 ⎣ ⎦

(18.13)

where ψi is the wave function of the electronic state i and ϵi is the Kohn–Sham eigenvalue, he efective potential Vef is given by (18.9)

he fourth term Exc represents the contribution due to the exchange–correlation energy. he exact form of the exchange and correlation energies is unknown for almost all systems of interest with the exception of a few idealized models. Hence, approximations are necessary to evaluate Exc. One of the most widely used approximation for the exchange–correlation functional is the local density approximation (LDA). Within the LDA, an approximate parameterized form of the exchange– correlation energy functional for an inhomogeneous electron gas is constructed from the knowledge of exchange–correlation energy of a homogeneous electron gas. hus, Exc is given by

Veff (r) = Vc (r) + Vion (r) + Vxc (r)

(18.14)

where Vc is the coulomb potential given by Vc (r) =

ρ(r ′)

∫ | r − r ′ | dr ′

(18.15)

where ρ(r) is given by Equation 18.6 and the exchange–correlation potential Vxc is given by Vxc (r) =

δExc ⎡⎣ρ(r)⎤⎦ δρ(r)

(18.16)

18-7

Melting of Finite-Sized Systems

he above set of equations must be solved self-consistently. What does it mean in practice? Let us note that the Equation 18.13 is a single particle equation and in principle can always be solved if the efective potential is known. But to know Vef, we need to know the charge density and that means the occupied set of orbitals ψi, which are the solutions of Kohn–Sham equations. herefore, we assume some trial charge density and generate Vef. hen, we solve the Kohn–Sham equations to get set {ϵi, ψi} and regenerate ρ(r). If this output charge density is the same as the input charge density, then we say that self-consistency is achieved. Obviously, we need to iterate this process quite a few times to get the self-consistent solutions. We must also mention that set {ϵi, ψi} has been introduced as parameters to get the equations. hey have no physical interpretation, except in a special case (see Janak’s theorem in Parr and Yang (1989)). In particular, ϵi are not the excitation energies of the ith single particle states. he only physical quantities are the total energy E and the charge density ρ(r). In spite of this, all the band structure calculations do use these eigenvalues as dispersion relation or bands. In fact, it works quite well. It is possible to use the Kohn–Sham equation to rewrite the total energy in terms of eigenvalues values ϵi. hen, the total energy is given by occ

E[ρ] =

ρ(r )ρ(r ′)

∑ n ⑀ − 2 ∫∫ | r − r′ | drdr′ + E −∫ v 1

i i

xc

xc

(r )ρ(r )dr (18.17)

i

his alternative form that does not involve the external potential is some times computationally more useful. hus, the basic steps for obtaining the ground-state energy of an electron system in the Kohn–Sham formalism are as follows: 1. Starting with some trial potential or charge density, solve Equation 18.13 with appropriate boundary conditions and get ϵi and ψi for all the occupied states. 2. Calculate the charge density using Equation 18.6 and generate Hartree potential and exchange–correlation potential. he Hartree potential involves the solution of Poisson equation that may not be trivial. 3. Calculate total energy and efective potential, and iterate till convergence is obtained for say total energy, charge density, etc. he technical complexity of the implementation of the above is dependent on a number of factors, e.g., system size, dimensionality (one, two, or three), boundary conditions, numerical schemes used, the type of basis function, etc. It must be mentioned that the modern methods of the electronic structure, developed by Car and Parrinello, changed the complexion of the methodology. A host of new techniques using minimization are now routinely used. One of the most signiicant achievements is the ability to carry out ion dynamics. Before we make more comments on ab initio molecular dynamical methods, it is appropriate to introduce standard methods for carrying out molecular dynamics.

18.3 Molecular Dynamics Consider a system of N interacting particles. he systems could be gases, liquids, solids, or surfaces. Let us restrict ourselves to a simple model consisting of structureless particles representing atoms. Our objective is to study the inite temperature properties of such a system using a suitable ensemble. Since we wish to simulate the behavior of the system as faithfully as possible, we will carry out atomistic dynamics, i.e., obtaining the trajectories of all the atoms evolving in time, under appropriate laws of motion with given physical conditions. We assume the particles to be classical and hence use Newton’s laws to describe their motion. he physical conditions depend on the nature of the investigation and will i x parameters such as temperature, number of particles, volume, pressure, etc. hus, the idea is very simple. Set up the physical conditions, use Newton’s laws, and explore the phase space as completely as possible by recording the trajectories of all the particles. hen compute the required observables as trajectory averages. he ingredients of molecular dynamical simulations are as follows: 1. he nature of the interacting system; in the present case interacting electrons and ions. 2. he nature of the interactions, normally taken as a suitably chosen easy to evaluate two-body interaction form. Another way of treating the interactions accurately is to use ab initio methods, which we will describe at the end of this section. 3. he physical conditions such as temperature, volume, pressure, etc. he most common simulations are constant temperature, constant volume, and constant energy. 4. Visualization: Seeing is believing. It is a wonderful experience to visualize the dynamical behavior of the particles. Indeed, plots organize a large volume of data to bring out systematic trends and provide a lot more fun.

18.3.1 Ingredients It is most convenient to illustrate the molecular dynamical calculations by using interatomic potentials. For the sake of simplicity, we assume a simple binary form that simpliies the calculation of total energy and the forces acting on the ions. 18.3.1.1 Total Potential Energy We assume that the total potential energy of a system of N interacting classical particles can be written as a sum of binary interaction and chose a suitable form for the two-body interaction potential. he total potential energy (in fact it is the total binding energy) is given by N

V (ri ) =

∑ v(r ) ij

(18.18)

i> j

where rij = |ri − rj|, which can be taken as the Lennard Jones potential,

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Handbook of Nanophysics: Principles and Methods

⎡⎛ σ ⎞ 12 ⎛ σ ⎞ 6 ⎤ v(r ) = 4⑀ ⎢⎜ ⎟ − ⎜ ⎟ ⎥ ⎝r⎠ ⎝r⎠ ⎥ ⎣⎢ ⎦

(18.19)

he irst term represents the repulsive part due to the atomic cores and the second term is the long-range attractive van der Waals interaction. As is well known, this is a suitable form for representing the interactions between inert gas atoms. Note that ϵ and σ are having dimensions of energy and length respectively. hese are diferent for diferent types of atoms and are obtained by suitable itting methods. It is easy to see that 21/6 σ is the dimer bond length with −ϵ as the binding energy for a two atom system. In order to carry out dynamics, we need forces on each of the atoms. he x–component of the force on ith atom is given by ∂V Fi x = − = ∂xi

N

∑f

x ij

(18.20)

j ≠i

with ⎛ 48⑀ ⎞ f =⎜ 2 ⎟ ⎝ σ ⎠ x ij

⎡⎛ ⎞ 14 ⎛ ⎞ 8 ⎤ ⎢⎜ σ ⎟ − ⎜ σ ⎟ ⎥ ⎢⎝ rij ⎠ ⎝ rij ⎠ ⎥ ⎣ ⎦

(18.21)

hese are 3N equations of motion for N particles in threedimension. 18.3.1.2 Simulating Atomic Motion: Calculation of Trajectories he next important ingredient is the calculation of trajectories, which must be obtained by solving equations of motion. Given the initial conditions for N atoms, namely, the coordinates and the velocities (at time t = 0), the trajectories can be obtained by solving Newton’s laws. he solution is sought by numerical methods. he time is discretized and the successive positions as a function of time (at discrete time intervals) are obtained by a suitable algorithm. he commonly used algorithm, which turns out to be surprisingly accurate, is the Verlet algorithm. It is instructive to derive the Verlet equations by using good old Taylor series expansion. Expanding the x–coordinate for ith atom around time t, we get xi (t + dt ) = xi (t ) + xɺ idt + xɺɺi

dt 2 dt 3 + ɺɺɺ + O(dt 4 ) xi 2 3!

(18.22)

Similarly, for −dt, xi (t − dt ) = xi (t ) − xɺ i dt + xɺɺi

dt 2 dt 3 − ɺɺɺ + O(dt 4 ) xi 2 3!

(18.23)

Adding these two equations we get xi (t + dt ) = 2xi (t ) − xi (t − dt ) + where we have used Fi x = miaix = mi xɺɺi .

Fi x 2 dt mi

(18.24)

he algorithm is very simple. If we know the positions at the last two time steps, then we obtain the coordinates for the next step and thus generate the trajectories for suiciently long time. A few comments are in order: 1. he error in the calculation of the coordinates is O(dt4). 2. he Verlet equations do not involve velocities explicitly and hence velocities have to be calculated from available positions using v(t ) =

v(t + dt ) − v(t − dt ) 2dt

(18.25)

his means that we need position at next time step to get velocity at the current time step. 3. he algorithm is simple to program, needs very little memory, and has very nice desirable properties. First, it has a time reversal symmetry; second, it shows excellent energy conservation; and third, it is area preserving. 4. In spite of this, there are always limitations due to the truncation errors. Ater all we are solving the second-order equations approximately with inite precision. We should be cautious in choosing time step, dt, and the number of iteration that sets a limit of the total simulation time. A drit in the energy must be avoided or at least minimized to an acceptable level. A popular form of Verlet algorithm is velocity Verlet algorithm that we now state. his algorithm involves explicit use of velocities in computing the coordinates at the next iteration. he Velocity Verlet equations are given by xi (t + dt ) = xi (t ) + vix (t )dt +

vi (t + dt ) = vix (t ) =

Fi x (t ) 2 dt 2mi

Fi x (t + dt ) + Fi x (t ) dt 2mi

(18.26)

(18.27)

Note that we have incorporated the steps for calculating the total kinetic energy and the total potential energy. 18.3.1.3 Ensemble here are two commonly used ensembles viz. microcanonical and canonical ensembles. he choice of the ensemble is dependent on the nature of the physical system and the problem at hand. • Constant energy simulations—microcanonical ensemble We can maintain the cluster at constant energy by not allowing it to interact with the outside world, i.e., keeping the system isolated. For example, we can start by having an arbitrary set of positions of the atoms. he cluster at time t = 0 will have some potential energy (nonzero—unless we are lucky to generate equilibrium position). If we let the position evolve according to Verlet equations with zero initial velocities, then at each instant

18-9

Melting of Finite-Sized Systems

of time the total energy E = T + V will be conserved. Another way of simulating the isolated system, especially when it is in an equilibrium position, is to set up random initial velocities derived from the Maxwell–Boltzmann distribution. his will set the initial kinetic energy. • Constant temperature simulation—canonical ensemble his is a common situation, where in addition to the number of particles and volume the temperature is kept constant. In the present case of atomic clusters, we do not have any volume parameter as clusters need no enclosure. But in most of the simulations, a suitable box representing the volume of the system is required, along with the speciied boundary conditions. he temperature can be calculated from the total kinetic energy using equipartition theorem: 1 T = kBT × f = 2

∑ 12 m v

2 i i

(18.28)

i

where f is the number of degrees of freedom. In our case, f = 3N − 6, since we conserve the linear momentum and the angular momentum; both set to be zero at time t = 0. For the present problem, we are required to carry out three processes, namely, heating, cooling, and maintaining the system at a given temperature. We introduce a rather simple method to control the system temperature: the velocity scaling method. At any time instant t, let Tc be the current temperature and Tr the required one. We can raise or lower the temperature by scaling all the velocities uniformly by vir = vic

Tr Tc

(18.29)

where vic is the current velocity. he new scaled velocities vir are then used in equation (Equation 18.26) for propagating the system. Of course, the scaling is carried out for all the three components of velocities of all the atoms. We would like to note that this velocity scaling is a crude way of mimicking a heat bath. More sophisticated baths such as Nosé thermostat are available and should used if a true canonical distribution is warranted. We note some excellent books on this topic (Allen and Tildesley, 1987; Frenkel and Smit, 1996; Rapaport, 1998).

18.3.2 Ab Initio Molecular Dynamics: Marrying DFT and MD It is clear from this brief introduction that the total energy and the forces on ions are crucial for an accurate computation of trajectories. For a parameter-free computation, it is necessary to solve the electronic structure problem during the time evolution of the ionic trajectory. here are two computationally tractable schemes. he irst one is the well-known Car and Parrinello method, which uses a modiied Lagrangian to

incorporate the electronic degrees of freedom. he dynamics of electron is ictitious. he ions and the electronic degrees of freedom are evolved simultaneously. he method has revolutionized the way electronic structure calculations were carried out. he second method is known as the Born–Oppenheimer dynamics. At time t = 0, the electrons are assumed to be on the Born– Oppenheimer surface, i.e., in the instantaneous eigenstates of the Kohn–Sham Hamiltonian, with the external potential provided by the ions. hen the total energy is calculated within the density-functional theory, from which the forces on the ions can be evaluated as −∂E/∂R I. his calculation is then followed by a molecular dynamical move for the ions. his move changes the external potential generated by the ions, leading to the efective potential. Now the electrons are no longer in the instantaneous eigenstate of the new Kohn–Sham Hamiltonian. Modern minimization techniques such as conjugate gradient methods may be used to bring the electrons back into the instantaneous eigenstate, i.e., on the Born–Oppenheimer surface. his procedure of moving the ions classically and bringing the electrons back on the Born–Oppenheimer surface constitutes one step of ab initio Born–Oppenheimer molecular dynamics. his procedure when iterated for a long time, i.e., for many steps, generates ionic trajectories, which can be used to extract the thermodynamic quantities such as density of states, entropy, speciic heat, etc. Many sophisticated techniques have been successfully developed to make this procedure more eicient. It is now possible to carry out the dynamics of up to a few hundred electron system for a simulation time of the order of up to about 100 ps per trajectory* with modest computational power. Quite clearly, the Born–Oppenheimer dynamics is much more general than the Car–Parrinello dynamics. A full exposition of total energy and force methods is beyond the scope of this chapter. A number of excellent articles and books are available for interested readers (Kohanof, 2006; Martin, 2004; Payne et al., 1992). Having computed the trajectories, it is necessary to compute the relevant thermodynamic quantities. In the next section, we discuss the computation of some of these quantities. Apart from conventional ones, we also present a very useful technique to extract entropy and speciic heat, i.e., the multiple-histogram method.

18.4 Data Analysis Tools In this section, we present the basic tools of analyzing the inite temperature trajectory data that can probe the phase transformation. Since we are going to deal with the statistical mechanics, let us recall some of the basic terms. here are two commonly used ensembles in statistical mechanics: the constant energy (microcanonical) ensemble and the constant temperature (canonical) ensemble. Generally, clusters are simulated in free space. his action leads to zero pressure on it. In simulations, the interacting atoms are allowed to evolve in time, in principle exactly— in practice using Verlet or similar suitable algorithm, in order * 100 ps corresponds to 40,000 molecular dynamical steps with a time step of 2.5 fs.

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Handbook of Nanophysics: Principles and Methods

to span a reasonable region in the phase space. hen, the averages over the trajectories yield the required statistical averages. In the present case, it is more proitable to extract the entropies via the multiple-histogram method. h is method difers slightly depending upon the nature of the ensemble. We will illustrate the method for canonical ensemble. In addition, we also discuss the computation of a number of other traditional parameters commonly used such as the root-mean-square bond-lengthluctuations, mean-squared displacements, etc. We begin with a mathematical function, the electron localization function, which is convenient to describe the nature of bonding in clusters.

18.4.1 Electron Localization Function he electron localization function is not a thermodynamical indicator. However, it has been extremely useful in elucidating the nature of bonding between atoms in a cluster. his is especially useful since it has been observed that the nature of bonding in atomic clusters can be very diferent from that in their bulk counterpart. Further, as noted earlier, each atom in a cluster can be bonded to other atoms with diferent bond strengths. Analysis of electron localization function is useful in bringing out these diferences in the bonding between diferent atoms or a group of atoms. Since the nature of bonding in clusters can afect their inite temperature properties, it may be necessary to carry out such analysis. he electron localization function was originally introduced by Becke and Edgecombe as a simple measure of electron localization in atomic and molecular systems (Becke and Edgecombe, 1990). However, their deinition was electron spin dependent. Silvi and Savin later generalized this function for any density independent of the spin (Silvi and Savin, 1994). According to their deinition, for a single determinantal wave function built from, say Kohn– Sham orbitals ψi, the electron localization function is given by ⎡ ⎛ D ⎞2⎤ χ ELF (r) = ⎢1 + ⎜ ⎟ ⎥ ⎝ Dh ⎠ ⎥ ⎣⎢ ⎦

−1

(18.30)

where Dh =

3 1 (3π 2 )5/3 ρ5/3 (r) and D = 10 2

∑ ∇ψ (r) i

i

2

2

−

1 ∇ρ(r) ρ(r) 8 (18.31)

where ρ(r) is the valence electron density D is the excess local kinetic energy density due to Pauli repulsion D h is the homas–Fermi kinetic energy density for homogeneous electron gas he numerical values of χELF are conveniently normalized to a value between zero and unity. A value of 1 represents a perfect localization of the valence charge, while the value for uniform electron gas is 0.5. Typically, the existence of an isosurface in the

region between two atoms at a high value of χELF, say ≥0.7, signiies a localized bond in that region. Silvi and Savin also proposed a topological classiication and rationalization of the electron localization function, which helps in giving the quantiication of the chemical concepts associated to the function. According to their description, the molecular space is partitioned into regions or basins of localized electron pairs. At very low values of electron localization function, all the basins are connected (disynaptic basins). In other words, there is a single basin containing all the atoms. As the value of χELF is increased, the basins begin to split, and inally, we will have as many basins as the number of atoms. he value of electron localization function at which the basins split (a disynaptic basin splits into two monosynaptic basins) is a measure of interaction between the diferent basins (i.e., a measure of the electron localization).

18.4.2 Traditional Indicators of Melting It is not easy to give a precise dei nition of melting in a initesized system such as atomic cluster, which does not undergo a proper phase transition in the (discontinuous or singular) sense seen in ininite systems. Even the notion of solid state and liquid state is a little vague. It is preferable to use the terms solidlike and liquidlike. Roughly speaking, by solidlike, we mean that the constituent ions of the cluster vibrate about i xed points. By liquidlike, we mean that the ions undergo a dif usive motion, exploring the entire volume of the cluster; there is permutational equivalence between the ions. To make this discussion more rigorous, one should introduce the time scale on which such behavior is to be observed, which depends in turn on the conditions of the experiment or simulation. In a general sense, the melting of a cluster is a process by which the cluster goes from a solidlike state to a liquidlike state as the cluster is heated. In the following, we shall discuss a number of indicators that have been used traditionally in simulations to investigate melting behavior. he multiple-histogram method for extracting the density of states and thermodynamic averages will be discussed later in Section 18.4.3. 18.4.2.1 The Caloric Curve A direct indicator of melting is the plot of the internal energy with respect to temperature (in the ensemble of interest). For bulk systems, this curve exhibits a discontinuity at the transition temperature, and the diference in the internal energy at the temperature at which the discontinuity occurs is the latent heat of melting of the system. he derivative of the internal energy with respect to the temperature is the speciic heat and shows a δ function behavior for bulk systems at the transition. In contrast, for inite-sized systems, the caloric curve does not show a sharp discontinuity. 18.4.2.2 Root Mean Square Bond-Length Fluctuations—Lindemann Criterion As thermal energy is supplied to a cluster, the average amplitude of vibrations increases and in a liquidlike state particles dif use.

18-11

Melting of Finite-Sized Systems

he Lindemann criterion asserts that a system may no longer be considered to be solid if the average bond-length luctuations exceed about 10% to 15% of their ground-state value. he average bond-length luctuation for each atom in a cluster with Na ions is deined as

I δ rms =

1 Na − 1

rIJ2

Na

∑

t

− rIJ

rIJ

J ≠I

2 t

(18.32)

I

0m

m =1 I =1

+ t ) − R I (t 0m )⎦⎤

2

(18.33)

Here t represents a time delay, and the average is performed over the Na ions and also over M time origins t0m taken at regular intervals throughout a molecular dynamics simulation. In a solidlike state, 〈r2(t)〉 reaches a plateau on a time scale of order the vibrational frequency with a value of order the mean amplitude squared of the ionic vibration. In a liquidlike state, 〈r2(t)〉 displays a linear portion corresponding to dif usive motion with dif usion constant: 1 d 2 D= r (t ) 6 dt

(18.34)

18.4.2.4 Velocity Autocorrelation Function and Power Spectra he velocity autocorrelation function is deined as

C(t ) =

(

v(t 0 + t ) − v

)(

⋅ v(t 0 ) − v

(v (t ) − v )

2

A nonzero value at the zero frequency of the power spectrum results when the motion has a difusive character.

Yet another possible indicator has been suggested by the work of Rytkönen et al. (1998) on the 40-atom sodium cluster. hey analyzed the shapes of the density before and ater the melting transition using a dimensionless shape parameter dei ned as

∑

l

| alm |2 =

m=− l

Na

∑∑ ⎣⎡R (t

(18.36)

0

Sl =

he mean-squared displacement difers from the bond-length luctuation in that one considers the motion of a single particle over time and averages over all the particles. It attempts to capture the onset of a dif usive, liquidlike state. he mean-squared displacement is given by M

∫

C(ω) = 2 C(t )cos(ωt )dt

l

18.4.2.3 Mean-Squared Displacement and Diffusion Coefficient

1 Na M

∞

18.4.2.5 Shape Analysis of the Density

t

where 〈…〉t denotes either a time average (microcanonical ensemble) or a thermal average (canonical ensemble) rIJ is the distance between ions I and J

r 2(t ) =

he power (or phonon) spectrum is

)

Qlm =

m=− l

4π d 3rr lYlm (θ, φ)ρ(r) 2l + 1

∫

One may also average C(t) over ions and diferent values of the time origin, as in Equation 18.33, as well as over x-, y-, and z-components.

(18.38)

he shape parameter Sl as deined by Equation 18.37 integrates out all the possible values of m and is rotationally invariant. his indicator is especially interesting since it can use the electron density—a quantity that is available through ab initio approaches. 18.4.2.6 Quadrupole Deformation It has been observed in experiments that upon melting, the shape of certain clusters such as SnN changes from prolate to spherical. his structural deformation was measured by the change in diffusion coeicient in ion mobility experiments by Shvartsburg (Shvartsburg et al., 1998). Such a change in the geometric shape of the cluster can be analyzed more conveniently using the quadrupole deformation parameter deined below:

(18.35)

where v is a component of velocity of a given ion t is a time delay t0 is a time origin

(18.37)

where Qlm are the multipole moments Y lm is a spherical harmonic ρ(r) is the electronic density rs(r) = [4πρ(r)/3]−1/3 is the Wigner–Seitz density parameter of the electron gas

⑀ def =

0

4π(2l + 1) | Qlm |2 2 l 2 l /3+2 s N

∑ 9r

2Q1 Q2 + Q3

(18.39)

where Q1 ≥ Q2 ≥ Q3 are the eigenvalues of the quadrupole tensor Qij =

∑R R Ii

Ij

(18.40)

I

Here i and j run from 1 to 3 I runs over the number of ions R Ii is the ith coordinate of ion I relative to the cluster center of mass

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Handbook of Nanophysics: Principles and Methods

18.4.3 Multiple Histogram Method

∫

Ω C (E ) = δ(E − V (R)) dR

All the above quantities used to characterize the melting transition have been motivated phenomenologically. It is desirable to compute thermodynamic indicators such as the entropy and the speciic heat to characterize the melting transition completely. In principle, an observation of the thermodynamic properties of a system should involve a set of simulations over a range of temperatures that are closely spaced. he need to maintain each temperature for long times, coupled with the high cost of i rstprinciples simulations means that the overall simulations can be very expensive. We need a technique that allows us to reduce the number of temperatures being simulated and to reliably interpolate the behavior of the system at temperatures in between. he multiple-histogram method is a technique that permits a better estimation of the classical density of states and also makes reliable interpolations possible. It was developed independently by Bichara et al. (1987), by Ferrenberg and Swendsen (1988), and in the context of clusters by Labastie and Whetten (1990). It was applied initially to data collected by Monte Carlo simulations. What follows is a brief description of the technique with its theoretical basis. 18.4.3.1 Idea of the Multiple Histogram Method: Canonical Ensemble Given a inite number of data sets of some physical quantity, e.g., Ni potential energies per temperature and τ temperatures, we would like to interpolate reliably the values over a range of temperatures including the ones for which simulations have not been performed. he contribution of a point in the phase space of a system to the statistical quantity being observed is, in the canonical ensemble, proportional to the Boltzmann factor at that temperature. Hence, given a data point from the simulations of one temperature point, its contribution at another temperature would be proportional to exp(β(E − E0)). Another advantage of the multiple-histogram method in the context of cluster simulations is that it permits a separate treatment of the conigurational and kinetic parts of the problem. his separation is desirable because the kinetic part of the problem can be handled analytically; a numerical sampling of the phase space is only required for the coniguration space. We assume that the Hamiltonian of the cluster is separable, H(R, P) = V(R) + K(P), where R ≡ {R I} are the ionic coordinates, P ≡ {PI} are the ionic momenta, V(R) is the potential-energy surface, and K (P ) = Σ I PI 2 /(2M I ) is the kinetic energy. he classical density of states can be expressed as a convolution integral:

∫

Ω K (E ) = δ(E − K (P ))d P

(18.42) (18.43)

Now, ΩK(E − W) is known analytically (Kittel, 1958) as ΩK (E − W) ∼ (E − W)v/2 − 1 (neglecting unimportant constant factors), where ν is the number of independent degrees of freedom of the system. hus, only the conigurational density of states ΩC(E) is required. his can be extracted from the potential-energy values obtained from the simulations. We need not assume here that the sampling simulations follow a canonical distribution in kinetic space, but we will assume that they are canonical in coniguration space, that is, that the probability for inding a potential energy V at a temperature T is given by p(V , T ) =

Ω C (V )exp(−V / kBT ) Z C (T )

(18.44)

where ZC(T) is the conigurational partition function required for normalization. he conigurational density of states ΩC(E) is extracted from the simulation by comparing the expected potential-energy distribution, Equation 18.44, with that obtained numerically in the sampling runs. he irst step in extracting ΩC(E) is to construct a histogram of the potential energy at each of the τ temperatures used for the sampling runs. For this purpose, the potential-energy scale, which ranges from V0 to some maximum observed value Vmax, is divided into NV intervals (or bins) of width δV = (Vmax − V0)/N V. he same bins should be used for all temperatures. We shall denote each temperature by an index i satisfying 1 ≤ i ≤ τ, and each bin by an index j satisfying 1 ≤ j ≤ NV, with Vj the central value of the potential energy in the jth bin. Let nij be the number of times the potential energy assumes a value lying in the jth bin at a temperature i. (In dynamical sampling methods, one would rather take nij to be the total time spent by the system in this bin.) hen, the probability that the system takes a potential energy in the jth bin at an inverse temperature βi = 1/(kBTi) is estimated from the simulation as pijsim =

nij

(18.45)

∑n j

ij

On the other hand, the theoretical probability is obtained from Equation 18.44 as

E

Ω(E) =

∫ Ω (W )Ω (E − W )dW C

K

(18.41)

V0

where V0 is the global minimum of the potential-energy surface ΩC(E) and ΩK(E) are the so-called conigurational and kinetic densities of states, respectively,

pijtheo = p(Vj , Ti )δV = Ω C (Vj )δV

exp(−βiVi ) ZC (βi )

(18.46)

Equating pijsim and pijtheo and taking logarithms yield S j + αi = βiV j + ln pijsim

(18.47)

18-13

Melting of Finite-Sized Systems

where

Nν

Z (T ) = S j = ln[ΩC (V j )δV ]

(18.48)

αi = − ln ZC (βi )

(18.49)

Now, Equation 18.47 is a system of equations whose right-hand side is known and whose let-hand side is unknown. Since we have τN V equations (i.e., pairs ij) but only NV + τ unknowns (i.e., the Sj and the αi), this system is overdetermined. We therefore solve it in a least-squares sense, regarding the τN V diferent values of Wij ≡ βiVj + ln pijsim

(18.50)

in efect as “experimental” data to which we wish to it the NV + τ quantities Sj and αi . hus, from Equation 18.47, we are led to choose Sj and αi such as to minimize χ=

∑ ij

(Wij − S j − αi )2 (δWij )2

(18.51)

where δWij is the statistical error in the quantity Wij . From Equation 18.50, this error satisies δWij =

δpijsim ≈ cnij−1/2 pijsim

(18.52)

where c is an unimportant constant. he second step in Equation 18.52 follows because the value nij of each bin of the histogram follows approximately a Poisson distribution. Putting together Equations 18.50 through 18.52, the inal least-squares problem is thus to minimize χ=

∑n (β V + ln p ij

i

sim ij

j

− S j − αi )2

(18.53)

ij

with respect to Sj and αi, which requires solving the linear equations ∂χ/∂Sj = 0 and ∂χ/∂αi = 0 for Sj and αi. he Sj give us the conigurational density of states, Equation 18.48, while the αi give us the conigurational partition function, Equation 18.49. We use the Gauss elimination method to solve these linear equations. Since the equations are overdetermined, the αi that are obtained are relative to one of them. Further, our temperatures are ordered in ascending order, choosing α0 = 0 corresponds to the choice of entropy reference. he parameters αi then enable us to compute the entropy Sj, the partition function Z(βi), the internal energy U(T), and the conigurational speciic heat Cv as follows:

S j = kB

∑

Nτ i =1

(ln nij + βiVj − α i )

∑

Nτ i =1

(18.54)

⎛

Vj ⎞

∑ exp ⎜⎝ S − T ⎟⎠

(18.55)

j

j =1

U (T ) =

2T (N − 1) 1 + 2 Z

Cv =

Nv

⎛

Vj ⎞

∑ exp ⎜⎝ S − T ⎟⎠ V j

j

(18.56)

j =1

2T (N − 1) 1 + 2 〈V 2 〉 − 〈V 〉2 2 T

(

)

(18.57)

where 〈V〉 = U(T). It may be noted that due to the use of least square it, the resulting speciic heat curves are smooth. We have glossed over one small point in this derivation: the conigurational partition function ZC(β) is by deinition related to an integral over ΩC(V), and thus the Sj and the αi are not independent. However, enforcing the relation between Sj and αi converts the linear least-squares problem, Equation 18.53, to a nonlinear one. It is therefore simpler in practice to treat the Sj and αi as independent, as we have done above, and check that the partition function is consistent with the extracted density of states at the end. h is invariably turns out to be the case for data that are reasonably statistically converged. With ΩC(E) in hand, we can now construct the full density of states Ω(E) from Equation 18.41. his in turn gives us access to a large range of thermodynamic averages for the system using the standard statistical mechanical relations (Kittel, 1958). Note, in particular, that it is possible to evaluate averages in a variety of ensembles, not just in the ensemble that was used for the sampling runs themselves.

18.5 Atomic Clusters at Finite Temperature Atomic clusters, as noted earlier, are inite-sized systems that are restricted in all three directions. Such restrictions lead to their unusual properties including the inite temperature characteristics. Before we discuss the phenomenon of melting of clusters, let us describe in brief the process of melting in bulk systems.

18.5.1 Melting of Bulk Systems Melting and freezing are commonly occurring phenomena. Many substances such as ice and metals transform from solid state to liquid state upon heating; i.e., they undergo melting. h is phenomenon is commonly termed as “phase transition.” A phase is an equilibrium thermodynamic state of a substance over a range of thermodynamic variables. he study of such phase transition has been one of the serious activities in the area of solid-state physics for the past several decades. It is also well known that such a change of phase occurs at a well-deined temperature. In the case of melting, this temperature is called the “melting temperature” of the substance. In other words this change takes place suddenly as the temperature increases through the melting

18-14

Handbook of Nanophysics: Principles and Methods

temperature. Apart from solid–liquid transition, there are many other phase transitions such as order–disorder, magnetic– nonmagnetic, superconducting state–normal state, etc. Let us examine the physical process when a homogeneous ordered solid, say a sodium metal, is heated. At low enough temperatures, the atoms exhibit small harmonic oscillations around their mean positions. As the temperature increases, the amplitude of these oscillations also increases. Essentially, the lattice executes harmonic vibrations. At low temperatures, it is possible to identify the space, i.e., the unit cell, to which the individual atoms belong. As the solid is heated further, the amplitude of such oscillations increases so much that the atoms begin to execute anharmonic motion and eventually the bonds between them start breaking. he individual atoms now no more belong to a particular “unit cell.” his leads to a dif usive motion of the atoms and, at a critical temperature, both the solid and the liquid states coexist. At this stage, pumping in more energy does not increase the temperature, i.e., the kinetic energy, of the system. If the system is heated further, the solid gets completely transformed into a liquid state. his solid–liquid phase transition involves latent heat. he phase diagram of such a transition with respect to thermodynamic variables such as pressure, volume, and temperature for many solid–liquid–vapor transition has been extensively studied (Stanley, 1987). he phase transitions are traditionally classiied by Ehrenfest’s classiication, which, although faulty, is quite useful. According to this classiication, if G is the Gibbs free energy, then its nth derivative with respect to temperature T is given as Gn =

∂ nG ∂T n

P ,V

he nth order transition is characterized by discontinuous Gn, with all the lower derivatives being continuous. Solid–liquid transition is known to be a irst-order transition, since S=−

∂G ∂T

P

is discontinuous, where S is the entropy. he behavior of G and S is schematically depicted in Figure 18.5. It may be noted that a more convenient description of the irst-order transition is the one which involves latent heat. It is interesting to note that it is possible to dei ne a parameter called an “order parameter,” which is zero for one phase and changes to a nonzero value across the phase transition. A solid is a periodically ordered system having long-range correlations in density. he liquid does not have any long-range correlations. As the temperature of liquid is lowered, a (mass) density wave is set up. When the temperature is lowered below the phase transition temperature, the system gets locked into one of the modes of this density wave. herefore, ρ(G), where ρ is density and G the irst reciprocal lattice vector, can be identiied as an order parameter. Let us recall that Helmholtz free energy F is given as,

g Phase II Phase I

T

S

Phase II Phase I

Tc

T

FIGURE 18.5 he schematic diagram of Gibb’s free energy per particle (g = G/N) and entropy (S) of a N particle system as a function of temperature (T).

F = U − TS, U being the internal energy. At zero temperature, the phase of the system is determined by the internal energy U only. As temperature is increased entropy starts playing a signiicant role and at the phase transition there is a balance between the internal energy and the entropy contributions. hus, the internal energy as well as the entropy plays a signiicant role in phase transitions. It may be noted that such transitions as solid–liquid are well understood by examining the caloric curve and the speciic heat for the system under consideration as a function of temperature.

18.5.2 Melting of Atomic Clusters Atomic clusters, the object of our interest, exhibit signiicantly diferent inite temperature characteristics as compared to the ordered extended systems. It may be noted that the inite size systems do not show sharp phase transitions. Hence, it is preferable to use the term “phase transformation” to describe any phase change seen in the cluster. It is of interest to ask the question: What happens when cluster is heated? Let us recall that every atom in a typical ordered homogeneous solid has a similar environment, i.e., to say, all the atoms are bonded to other atoms by similar strengths, the only exception being the surface atoms. herefore, it is natural to expect all the atoms to respond similarly when a solid is heated (with the exception of the surface atoms). However, in the case of clusters, especially for small sizes with number of atoms up to about N ∼ 100, the environment of each atom could be diferent. Each atom may be bonded to

18-15

Melting of Finite-Sized Systems

other atoms with diferent strengths. herefore, we expect their dynamical response to heating to be diferent. Further, in a cluster the ratio of surface atoms to the total number is quite large compared to that of the extended systems. herefore, the melting process is not expected to exhibit sharp phase transformation. Clusters difer in another aspect from solids. hey come in diferent shapes and sizes. In fact, clusters in this sense have individuality. heir inite temperature properties, e.g., shapes of speciic heat curves and melting points, depend on the size. It turns out that in many cases, as we shall see, the inite temperature behavior is extremely size sensitive where even one atom makes a dramatic efect. We will examine two parameters: the melting temperatures and the shapes of the speciic heat curves. he melting temperature of a cluster is taken to be the temperature corresponding to the peak in the speciic heat curve. It is obvious that a cluster will have a number of isomers extending to high energies. he distribution of energies of these isomers afects the nature of speciic heat. he behavior below melting temperature could be signiicantly afected by isomerization process (Bixon and Jortner, 1989). Apart from these parameters, issues such as surface melting, pre-melting, and impurity-induced efects need to be considered. he response of a cluster to heating depends on the nature of bonding. A question of interest is: “Is the bonding in a cluster similar to that seen in its bulk counterpart?” A priori, there is no reason to believe that the nature of the bonding will change. However, as we shall see there are at least two cases experimentally established where the nature of bonding changes signiicantly leading to rather interesting phenomena, higher than the bulk melting temperatures for clusters in certain size range. Since there is no sharp phase transition in inite size systems, it is common to describe a state of a cluster as solidlike and liquidlike. Although phase transformation in small systems is gradual and not sharp, as pointed out by Berry et al., there is some precision and a certain kind of sharpness to these changes (Berry, 1997). At suiciently low temperatures, the clusters can be described as solidlike. Many clusters exhibit well-ordered geometries that are not necessarily compatible with periodic geometries. It is possible to identify a temperature Tf below which the cluster is solidlike. Between Tf and Tm, i.e., the melting temperature of the cluster, the solidlike and liquidlike phases coexist. And above Tm, it is clearly in the liquidlike state. Considerable amount of work has been carried out to elucidate many of the points raised above and have been discussed in a lucid article by Berry (1997). he two common tools used were classical molecular dynamics and Monte Carlo techniques using canonical or microcanonical ensemble. Recent experiments carried out in the last 10 years or so, brought out the necessity of using ab initio molecular dynamics. here have been three sets of experimental work. he irst set of experiments was performed on sodium clusters by Haberland and coworkers, which brought the irregular behavior of measured melting temperatures (Schmidt et al., 1997, 1998). he second intriguing phenomenon observed was the higher than the bulk melting temperatures of clusters of tin and gallium (Breaux

et al., 2003; Shvartsburg and Jarrold, 2001). Equally dramatic observations were reported on shapes of the speciic heat curves for gallium and aluminum clusters where even one atom made a diference. For example, the speciic heat of Ga31 showed an identiiable sharp peak while Ga30 was nearly lat displaying a near continuous phase transformation. he understanding and explanation of these observations required ab initio or densityfunctional methods. It may be noted that the dynamics of ions is still classical and governed by Newton’s laws. However, the forces acting on ions as cluster evolves in time, are now determined from the instantaneous electronic structure. hus, density-functional molecular dynamics brought in the efects of full interacting electron–ion system. It was possible to carry out such a program in the late 1990s because of three ingredients. First, the advent of Car–Parrinello molecular dynamics and Born–Oppenheimer molecular dynamics. Second, the availability of ultrasot pseudopotentials; and third, the availability of phenomenal computing power at afordable cost. With these ingredients, it is now possible to carry out molecular dynamical simulations over a time scales of 100–150 ps per temperature, depending on the nature and size of the systems. For clusters of simple metal atoms such as sodium sizes up to about N ∼ 200 atoms are accessible. However, for clusters of transition metal atoms, dynamics may be carried out for sizes up to about N ∼ 50 atoms. Mixed clusters obviously will require much more computing time in order to span a reasonable coniguration space. Even then such ab initio simulations fall signiicantly short of the time scales accessible to classical dynamics using parameterized interatomic potentials. If a reliable data is needed for clusters over a few hundred atoms, there is no alternative to using appropriately chosen interatomic potentials. In what follows, we mainly focus on the work carried out in the last 10 years or so using irst-principles calculation. We will begin the discussion on the clusters of sodium, followed by higher than the bulk melting system Sn and Ga. hen, we will present a review of the Ga and Al dealing with size-sensitive efect on speciic heat. We end this section by reviewing work on cages of Au and impurity-induced efects. A large body of simulation work, both using interatomic potential and irst-principle methods exists. It is not possible to summarize all contributions in this chapter. he reader is referred to a recent exhaustive review (Baletto and Ferrando, 2005). 18.5.2.1 Irregular Variations in the Melting Point Clusters of sodium are perhaps the most intensely studied. In a series of experiments the melting temperatures, latent heat, and entropy of sodium clusters in the size range of N = 55–355 atoms per cluster have been measured by Haberland and coworkers (Schmidt and Haberland, 2002, Schmidt et al., 1997, 1998). A brief experimental procedure is noted below. In the irst step, cluster ions are produced in a gas aggregation cell and thermalized in a heat bath typically of helium gas at 70 Pa. he clusters leave the heat bath and are transferred into a high vacuum and then mass selected.

18-16

Handbook of Nanophysics: Principles and Methods

Tmelt

Haberland: cluster melting

Tevap

300

Eevap

55 280 Melting temperature (K)

Energy (eV)

15 Na+139 10

5

142

260

139

240 149

220

(a)

0

100

200

300

400

180

500

Temperature (K)

(b)

199

255

309

339

200 59

0

179, 183–185

50

93 100

150

200

250

300

350

Number of sodium atoms

FIGURE 18.6 (a) he total energy of Na+139 cluster as a function of temperature. he sudden increase at T = 260 K is due to melting. he melting temperature is marked. (b) he melting temperatures of Nan+ clusters as a function of size (n). (Ater Schmidt, M. and Haberland, H., C. R. Phys., 3, 327, 2002. With permission.)

he experiment consists of measuring the mass spectra as a function of temperature T of the heat bath from which caloric curve E(T) is extracted. It turns out that the increase of the cluster temperature leads to the ejection of a certain number of atoms from the cluster. he same efect could be achieved when the cluster has absorbed one photon of known energy. herefore, the increase in the internal energy due to increase in the temperature can be equated to the change in internal energy due to the absorption of one photon. An experimental caloric curve for + Na139 is shown in Figure 18.6a. he most interesting result is shown in Figure 18.6b, where the observed melting temperatures in Kelvin are shown as a function of size. A number of unusual characteristics are immediately evident. he melting point varies irregularly between 230 to 290 K. he oscillatory behavior persists even in the size range of about N ∼ 350 atoms. he reduction in the melting points, expected for the inite-sized system, does not follow the simple 1/R scaling, where R is the radius of the system. However, the most peculiar observation relates to the position of the maxima in the melting points. he positions of the maxima do not correlate with the electronic or geometric shell closing. Interestingly the highest + melting temperature belongs to Na 55 having icosahedral shape. For reference, we note the bulk melting temperature as 371 K. We also note that the lowest melting temperature is observed for the cluster with size N = 92. Interestingly, Na92 is an electronically closed-shell system. In spite of extensive theoretical studies using interatomic potentials, these observations could not be understood. Density functional molecular dynamical simulations gave quantitative agreement and a clue toward the understanding of the maxima and minima observed in the experimental melting temperatures. In a recent work (Haberland et al., 2005), the authors demonstrate that the energy and entropy diferences between liquidlike and solidlike phases of clusters are relevant parameters

exhibiting pronounced maxima that correlate well with the geometric shell closing. Thus, the magic numbers displayed by sodium clusters for the melting temperatures are geometric in nature. They demonstrated that the icosahedral geometry dominates the melting phenomena in these clusters, a conclusion corroborated by photoelectron spectra. Their work brought out an interesting conclusion: this simple metal atom system displays two different kinds of magic numbers depending upon the properties investigated. Now we turn to the ab initio theoretical investigations of the melting of sodium clusters. • heoretical investigation on the melting of sodium clusters Aguado et al. reported irst-principle isokinetic molecular dynamical simulations for the sizes between N = 55 − 299 for 10 representative clusters (Aguado and López, 2005). hey used orbital free version of the density-functional theory and obtained very good agreement with the experimental melting temperatures. Figure 18.7a demonstrates the level of agreement. heir calculated latent heats also agree with the measured ones. hey found that structural aspects can afect all the broad features. he clusters that are compact, having shortened bonds between surface and core atoms, show high melting temperatures. Chacko et al. have also carried out one of the i rst successful Kohn–Sham based calculations for Na 55, Na92 , and Na142. he calculated melting temperatures and the latent heat were again in very good agreement with the experimental values (Chacko et al., 2005). Interestingly, they found that upon melting, Na 55 deforms its shape from spherical to quadrupole. he shape deformation parameter ϵ dei ned in Equation 18.39 is shown in Figure 18.7b. Clearly, upon melting the shape of Na 55 changes sharply from spherical to prolate (quadrupole deformation). Similar shape deformation has been observed by Rytkönen et al. in their ab initio simulations on Na40 as well

18-17

Melting of Finite-Sized Systems

0.005

14.5

1.6

14

Na55

13.5 13

Experiment OF-DFT

280 Tm (K)

0.015

def

V/N (Å3)

15

1/N 0.01

1.3

260 240

Na92

220 200 (a)

50

100

150

200 N Cluster size (N)

250

1.0 150

300

300

450

Temperature (K)

(b)

FIGURE 18.7 (a) Size variation of volume per atom (top) and melting temperature (bottom) in sodium clusters. he dashed line in the upper panel is the best linear it to the data. (Ater Aguado, A. and López, J.M., Phys. Rev. Lett., 94, 233401, 2005. With permission.) (b) Deformation parameter ϵdef for Na55 and Na92. (Ater Chacko, S. et al., Phys. Rev. B, 71, 155407, 2005. With permission.)

18.5.2.2 Higher-Than-Bulk Melting Temperature As noted earlier, i nite-sized systems are expected to melt at temperatures well below the bulk melting temperature. However, experimental measurements on clusters of tin and gallium brought out some surprises (Breaux et al., 2003, 2005; Shvartsburg and Jarrold, 2001). he melting temperatures of these clusters turned out to be substantially higher than their bulk melting point. he irst experimental observation of higher than the bulk melting temperature was seen in tin clusters in the size range of 10 ≤ N ≤ 30. hese measurements based on the ionic mobilities showed that the clusters Sn10 and Sn20 do not melt at least about 50 K above the bulk melting temperature of 500 K. he same group carried out extensive calorimetric measurements on a series of gallium clusters in the size range of 17–55 atoms. heir measured speciic heat is shown in Figure 18.9.

3.0

40

2.0 1.0

43

2.0 1.0

45

2.0 Normalized specific heat

as Na 20 and Na 55 (Rytkönen et al., 1998), except that this magic Na40 cluster underwent an octupole deformation rather than a quadrupole deformation as observed for Na 55. h is group has also investigated the thermal behavior of Na +59 and Na+93. heir estimated melting temperatures were consistent with the experimental ones. A systematic and detailed investigation of the inite temperature behavior over a broad size range of 8 ≤ N ≤ 55 has been reported (Lee et al., 2005a; Zorriasatein et al., 2007a). We show calculated heat capacities for 40 ≤ N ≤ 55 in Figure 18.8. he striking feature in the igures is that the shapes of speciic heat are sensitive to cluster size. Although small clusters with N < 25 do not show any recognizable peak, the speciic heat of clusters with N ∼ 50 are rather lat. It turns out that the shapes of the speciic heat curves are dependent on the nature of the ground-state geometries, viz. ordered or disordered. We will have an occasion to discuss the shape sensitive features while presenting the results on gallium clusters.

1.0

48

2.0 1.0

50

2.0 1.0

52

2.0 1.0

55

2.0 1.0

200 400 Temperature (K)

FIGURE 18.8 he normalized speciic heat as a function of temperature for Na N, N = 40, 43, 45, 48, 50, 52, and 55. (Ater Zorriasatein, S. et al., Phys. Rev. B, 76, 165414, 2007b. With permission.)

18-18

C/(3n – 6 + 3/2)k

Handbook of Nanophysics: Principles and Methods

30

41

31

42

32

43

33

44

34

45

35

46

36

47

37

48

38

49

39

50

40

55

of similar bonding in tin clusters as in silicon and germanium, i.e., covalent bonding. Our extensive density-functional calculations reveal that both Sn10 and Sn20 consist of highly stable tricapped trigonal prism (Joshi and Kanhere, 2003; Joshi et al., 2002). his unit turns out to be highly stable and enhances the melting temperature. We show the tricapped trigonal prism unit and the corresponding electron localization function in Figure 18.10 that brings out the covalent nature of bonding. his change in the bonding from their bulk counterpart and the existence of the tricapped trigonal prism unit is responsible for the higher than the bulk melting temperature. A similar result has been obtained by Chuang et al. for small clusters of tin by using ab initio density-functional methods (Chuang et al., 2004). However, in a later work it was observed that Sn20 fragments rather than becoming liquidlike at higher temperatures. It turns out that the fragmentation temperature (as seen in the simulations) depends on the nature of the exchange–correlation potential. Within LDA it is about 1250 K while for GGA it is about 650 K in agreement with the experimental results. Our studies also brought out the importance of long simulation times. he results with 50 ps per temperature were actually erroneous (Krishnamurty et al., 2006b). • Gallium clusters

0

400 800 1200 Temperature (K)

0

400 800 1200 Temperature (K)

FIGURE 18.9 Heat capacities plotted against temperature for Ga +n with n = 31–50 and 55. he points are the measured values, and the dashed lines are calculated from statistical thermodynamics. (3n − 6 + 3/2)k b is the classical (vibrational + rotational) heat capacity, where k b is the Boltzmann constant. (Ater Breaux, G.A. et al., J. Am. Chem. Soc., 126, 8628, 2004. With permission.)

Now, we turn our attention to clusters of gallium for which systematic and extensive data are available. In order to understand the higher than the bulk melting temperature, it is convenient to examine the nature of bonding and the electronic structure of bulk gallium. We follow the work by Gong et al. (1991). he stable bulk structure at ambient temperature, pressure is the α-Ga and can be viewed as base centered orthorhombic with eight

Note that the melting temperature of bulk Ga is 305 K. hree intriguing aspects can be immediately seen from the igure. Firstly, the melting temperatures identiied with the recognizable peaks are well above the bulk melting temperature. Secondly, there is an extreme size sensitivity seen in the shapes of the speciic heat curves. For example, adding just one atom to Ga30 changes the shape of the speciic heat curve dramatically. hirdly, the variation in the melting temperature with respect to size is about 350 K. We now summarize the results and ofer a plausible explanation for some of the above observations. he discussion is mainly based on simulations carried out by our group.

(a)

• Tin clusters It is worth examining some properties such as the band gap of group IV elements to which tin belongs. hese are, carbon, silicon, germanium, tin, and lead having band gaps (in electronVolts) of 5.5, 1.17, 0.75, 0.1 (gray tin) respectively, while lead is a metal. Clearly, tin a semimetal can be viewed as a failed semiconductor at room temperature. Tin transforms into a metallic phase (white tin) at temperature about 286 K. Further, small clusters of tin are known to show similar growth pattern as silicon and germanium clusters. hese observations suggest a possibility

(b)

(c)

FIGURE 18.10 (a) Ground state geometry of Sn10 cluster depicting the tricapped trigonal prism unit, (b) the isovalued surface of the electron localization function for this structure at the value of 0.7. (Ater Joshi, K. et al., Phys. Rev. B, 67, 235413, 2003. With permission.) (c) he isovalued surface of the electron localization function for a low-lying isomeric structure of Sn20 at the value of 0.55. (Ater Joshi, K. et al., Phys. Rev. B, 67, 235413, 2003. With permission.)

18-19

Melting of Finite-Sized Systems

0.062 39

DOS (103 eV–1 bohr–3)

0.0

Ga–II

0.015

4

α–Ga EF

β–Ga

3 2

Ga–II

1 α–Ga 0 (a)

–10

(b)

–5 Energy (eV)

0

5 (c)

FIGURE 18.11 (a) A part of the bulk structure of α-Ga (not a unit cell). It shows a part of two buckled planes connected by a short covalent bond represented by the dark line joining the black atoms. (b) he electron density of states for α-Ga, β-Ga, and Ga II. Note the deep pseudogap of α-Ga corresponding to the strong Ga 2 covalent bond depicted in the inset. (Ater Gong, X.G. et al., Phys. Rev. B, 43, 14277, 1991. With permission.) (c) he electron localization function of G31 at the value of 0.68. he black lines show the connected basins. (Ater Krishnamurty, S. et al., Phys. Rev. Lett., 86, 135703, 2006a. With permission.)

atoms per unit cell (See Figure 18.11a. he structure is peculiar in the sense that there is one nearest neighbor with a short bond of 2.44 Å. he six other neighbors are at 2.71 and 2.79 Å. he band structure of α gallium shows an interesting feature, i.e., a pseudogap related to the covalent bond between the atoms in the two buckled planes (see Figure 18.11b). Within the buckled plane, the charge density is metallic. It turns out that in the inite-sized systems, where the atoms are free to move and reconigure, the bonding between all the atoms is mainly covalent. h is can be inferred from the electron localization function analysis. his is illustrated in Figure 18.11c where we have shown the isovalued surface of Ga31. hus, both tin and gallium show higher than the bulk melting temperature due to localized bonding as opposed to delocalized bonding in their bulk counterpart. 18.5.2.3 Size Sensitivity of the Speciic Heat In this section, we discuss the most interesting aspect of size sensitivity in the speciic heat curves. It may be emphasized that such a size-sensitive behavior has been observed experimentally in gallium clusters (Breaux et al., 2005) and aluminum (Breaux et al., 2005; Neal et al., 2007) and in simulations for cluster of sodium, gold atoms (Krishnamurty et al., 2006a). hus the phenomenon is generic. It turns out that the origin of this phenomenon is certainly geometric. It depends on the nature of the ground-state geometry and also on the distribution of energies of all the isomeric structures. he second factor is not independent of the irst one. In general, the geometry of a cluster could be highly symmetric displaying rotational symmetry (e.g., Na55) or it could be completely disordered. he degree of order or disorder will vary with size. Recall that in a typical homogeneous ordered

solid, each atom being equivalent is bonded to other atoms with nearly equal strength. In contrast to this, in a typical cluster each atom is individual in the sense that it may be bonded with others with diferent strengths. As we have seen, the irst consequence of this is the broadening of the phase transition region over a range of temperatures. If the cluster is well-ordered, there is still a recognizable sharp peak. But when the cluster is disordered, each atom is likely to have a diferent local environment. Consequently, their dynamical behavior as a response to temperature will difer. Some of the atoms will pick up the kinetic energy at lower temperature leading to early dif usive motion while others may still be executing harmonic motion. In a given cluster if a large group of atoms are bonded together with similar strengths forming a region of local order, then it will melt at nearly the same temperature showing a recognizable peak. We illustrate these remarks for two clusters Ga 30 and Ga31. In Figure 18.12a, we show the ground-state geometries of these two clusters with two diferent perspectives. Clearly, the diference in the nature of the order is rather subtle. A detailed examination of the geometry and the nature of the bonding reveals that Ga31 is signiicantly more ordered than Ga30. In Figure 18.12b, we show mean-squared displacement for individual atoms at 250 K. All the atoms in Ga31 have very small mean-squared displacements, while there is a distribution of mean-squared displacements for Ga30, the largest displacement being of the order of 8 Å. As a consequence, Ga30, “melts” continuously showing no recognizable peak. he calculated speciic heat of these clusters are shown in Figure 18.12c. he dramatic diference seen experimentally is correctly captured by these ab initio simulations. Such size-sensitive behavior is also observed in the case of sodium clusters. In Figure 18.8, we show calculated speciic heat

18-20

Ga31

(b)

Ga30

Ga31

2.5 Ga30

10 8 6 4 2 0

(d)

250 K 2.2

18

(c) Mean square displacements (Å)2

(a) Ga30

10 8 6 4 2 0

36 54 Time (ps)

Ga31

72

90

250 K

Heat capacity (Cv/C0)

Mean square displacements (Å)2

Handbook of Nanophysics: Principles and Methods

1.9

Ga31

1.6 Ga30

1.3

18

36 54 Time (ps)

72

1

90

0

300

600

900

1200

Temperature (K)

(e)

FIGURE 18.12 (a and b) he ground-state geometries of Ga 30 and Ga 31 with two diferent perspectives. Perspective (b) is rotated by 90° with respect to perspective (a) about an axis shown in (a). (c and d) he mean square displacements for individual atoms of Ga30 and Ga31 computed over 90 ps. (e) he speciic heat curves of Ga30 and Ga 31 computed over 90 ps. (Ater Krishnamurty, S. et al., Phys. Rev. Lett., 86, 135703, 2006a. With permission.)

for the sizes of N = 40–55. Even here, the analysis of the groundstate geometries of these clusters indicate that these clusters grow from an ordered structure (Na40) to another ordered structure (Na55) via a disordered route; the maximum disorder is observed for the clusters around N = 50. his observation correlates completely with the calculated speciic heat curves. Small clusters of gold have attracted interest i rstly because of their reactivity and more recently due to the discovery of hollow cages in the size range of 16–18 atom (Bulusu et al., 2006). Au 20 happens to be another intriguing cluster showing a pyramidal structure exhibiting a large energy gap. Au19 is again a pyramid with missing apex atom (Krishnamurty et al., 2007). he i nite temperature simulations of these clusters show some interesting feature again conforming the generic nature of sizesensitivity noted above. In Figure 18.13, we show the groundstate geometry and the respective heat capacities of Au19 and Au 20. Interestingly, the lat nature of Au19 arises due to the “vacancy” induced dif usive motion at low temperatures.

18.5.2.4 Impurity-Induced Effects It is well-known in the solid-state community that impurities, even dilute ones, are capable of signiicantly changing many of the properties such as local structure and conductivity. Although there are no experimental results, a few simulations have shown very promising results. Such simulations are motivated by the desire to modify the inite temperature properties of the host system upon doping with impurities. Mottet and coworkers carried out molecular dynamical simulations of alloying efects in silver clusters by introducing a single impurity in clusters containing more than a hundred atoms (Mottet et al., 2005). he impurities doped were nickel and copper atoms. hey found a considerable increase in the melting temperature of the silver clusters upon doping. hey correlated this upward shit in the melting temperatures to the strain relaxation induced by the small central impurity in the icosahedral silver clusters.

Canonical speciic heat (Cv/C0)

2.2

Au20

1.8

Au19

1.4

1 500 650 800 950 1100 1250 1400 1550 (a)

(b)

(c)

Temperature (K)

FIGURE 18.13 (a and b) he ground-state geometries of Au19 and Au20 clusters. Note that one atom at the vertex of Au19 is missing. (c) he speciic heat curves of these clusters. (Ater Krishnamurty, S. et al., J. Phys. Chem. A, 111, 10769, 2007. With permission.)

Melting of Finite-Sized Systems

Another interesting observation has been seen in the case of silicon clusters. Small clusters of silicon, in the range of 15–20 atoms, fragment upon heating typically above 1300 K. It turns out that a single impurity of titanium in silicon clusters converts that structure into Frank–Kasper polyhedra. Interestingly, this caged structure remains non-fragmented until up to about 2200 K (Zorriasatein et al., 2007a). hus, impurity in these silicon clusters stabilizes their structure. In a very recent work, Chandrachud et al. examined the efect of doping a single carbon in Al13 and Ga13 (Chandrachud et al., 2007). he efect of impurity was to lower the melting temperature substantially in both cases.

18.6 Summary Atomic clusters are considered as models of nanostructure materials. It is known that their properties are neither bulk like nor atomic like. We have examined issues related to inite temperature behavior as observed in the experiments on atomic clusters. In particular three observations need to be explained: the irregular behavior of the melting points as a function of size, the size-sensitive nature of the speciic heat, and higher than bulk melting points in clusters of gallium and tin. We present methods to undertake inite temperature simulations i.e., the density-functional molecular dynamics, and we also present the tools for the analysis of the i nite temperature data. It is shown that the nature of the ground state, both geometric and electronic, inluences the i nite temperature properties. We bring out the role of bonding and establish a strong correlation between the geometric order (or the absences of it) with the shapes of the speciic heat curves. Finally, the efect of impurity doped in the host cluster has been brought out.

Acknowledgments It is a pleasure to acknowledge discussions with S. Blundell, A. Vichare, K. Joshi, S. Krishnamurty, M.-S. Lee, S. Zorriasatein, M. Ghazi, V. Kaware, and P. Chandrachud. We gratefully acknowledge C-DAC India for providing HPC facility.

References Aguado, A. and J. M. López, 2005, Phys. Rev. Lett. 94, 233401. Allen, M. P. and D. J. Tildesley, 1987, Computer Simulation of Liquids (Clarendon Press, Oxford, U.K.). Baletto, F. and R. Ferrando, 2005, Rev. Mod. Phys. 77, 371. Baruah, T., R. Zope, S. L. Richardson, and M. R. Pederson, 2003, Phys. Rev. A 68, 241404. Becke, A. D., 1996, J. Chem. Phys. 104, 1040. Becke, A. D. and K. E. A. Edgecombe, 1990, J. Chem. Phys. 92, 5397. Berry, R. S., 1997, Micro. herm. Eng. 97, 1089. Bichara, C., J. P. Gaspard, and J. C. Mathieu, 1987, Phys. Lett. A 119, 462.

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Bixon, M. and J. Jortner, 1989, J. Chem. Phys. 91, 1631. Breaux, G. A., R. C. Benirschke, T. Sugai, B. S. Kinnear, and M. F. Jarrold, 2003, Phys. Rev. Lett. 91, 215508. Breaux, G. A., D. A. Hillman, C. M. Neal, and R. C. Benirschke, 2004, J. Am. Chem. Soc. 126, 8628. Breaux, G. A., C. M. Neal, B. Cao, and M. F. Jarrold, 2005, Phys. Rev. Lett. 94, 173401. Bulusu, S., L.-S. Wang, and X. C. Zeng, 2006, Proc. Natl. Acad. Sci. 103, 8326. Chacko, S., D. G. Kanhere, and S. A. Blundell, 2005, Phys. Rev. B 71, 155407. Chandrachud, P., K. Joshi, and D. G. Kanhere, 2007, Phys. Rev. B 76, 235423. Chuang, F.-c., B. B. Wang, J. R. Chelikowsky, and K. M. Ho, 2004, Phys. Rev. B 69, 165408. Ekardt, W. (ed.), 1999, Metal Clusters (Wiley Blackwell, West Sussex, U.K.). Ferrenberg, A. M. and R. H. Swendsen, 1988, Phys. Rev. Lett. 61, 2635. Frenkel, D. and B. Smit, 1996, Understanding Molecular Simulations (Academic Press Ltd., San Diego, CA). Gong, X. G., G. L. Chiarotti, M. Parrinello, and E. Tosatti, 1991, Phys. Rev. B 43, 14277. Haberland, H. (ed.), 1994, Clusters of Atoms and Molecules (Springer-Verlag, Berlin, Germany). Haberland, H., T. Hoppler, J. Donges, O. Kostko, M. Schmidt, and B. von Issendorf, 2005, Phys. Rev. Lett. 94, 035701. de Heer, W. A., 1993, Rev. Mod. Phys. 65, 611. de Heer, W. A., W. D. Knight, M. Y. Chou, and M. L. Cohen, 1987, Solid State Physics, Vol. 40 (Academic Press, New York). Hohenberg, P. and W. Kohn, 1964, Phys. Rev. 136, B864. Jellinek, J. (ed.), 1999, heory of Atomic and Molecular Clusters (Springer-Verlag, Berlin, Germany). Jena, P., S. N. Khanna, and B. K. Rao (eds.), 1992, Physics and Chemistry of Finite Systems: From Clusters to Crystals, Vols. 1 and 2 (Kluwer Academic Publishers, Dordrecht, the Netherlands). Johansson, M. P., D. Sundholm, and J. Vaara, 2004, Angew. Chem. Int. Ed. 43, 2678. Joshi, K. and D. G. Kanhere, 2003, J. Chem. Phys. 119, 12301. Joshi, K., D. G. Kanhere, and S. A. Blundell, 2002, Phys. Rev. B 66, 155329. Joshi, K., D. G. Kanhere, and S. A. Blundell, 2003, Phys. Rev. B 67, 235413. Kittel, C., 1958, Elementary Statistical Physics (Wiley, New York). Knight, W. D., K. Clemenger, W. A. de Heer, W. A. S. M. Y. Chou, and M. L. Cohen, 1984, Phys. Rev. Lett. 52, 2141. Kohanof, J., 2006, Electronic Structure Calculations for Solids and Molecules: heory and Computational Methods (Cambridge University Press, Cambridge, U.K.). Kohn, W. and L. J. Sham, 1965, Phys. Rev. 140, A1133. Krishnamurty, S., K. Joshi, and D. G. Kanhere, 2006a, Phys. Rev. Lett. 86, 135703. Krishnamurty, S., K. Joshi, D. G. Kanhere, and S. A. Bundell, 2006b, Phys. Rev. B 73, 045419.

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Krishnamurty, S., G. Sadatshafai, and D. G. Kanhere, 2007, J. Phys. Chem. A 111, 10769. Kumar, V. and Y. Kawazoe, 2001, Phys. Rev. Lett. 87, 045503. Kumar, V., K. Esfarjini, and Y. Kawazoe, 2000, Advances in Cluster Science (Springer-Verlag, Heidelberg, Germany). Labastie, P. and R. L. Whetton, 1990, Phys. Rev. Lett. 65, 1567. Lee, M.-S., S. Chacko, and D. G. Kanhere, 2005a, J. Chem. Phys. 123, 164310. Lee, M.-S., D. G. Kanhere, and K. Joshi, 2005b, Phys. Rev. A 72, 015201. Martin, R. M., 2004, Electronic Structure: Basic heory and Practical Methods (Cambridge University Press, Cambridge, U.K.). Mottet, C., G. Rossi, F. Baletto, and R. Ferrando, 2005, Phys. Rev. Lett. 95, 035501. Neal, C. M., A. K. Starace, and M. F. Jarrold, 2007, Phys. Rev. B 76, 054113. Parr, R. and W. Yang, 1989, Density Functional heory of Atoms and Molecules (Oxford University Press, New York). Payne, M. C., M. P. Teter, D. C. Allan, T. A. Arias, and J. D. Joannopoulous, 1992, Rev. Mod. Phys. 64, 1045. Perdew, J. P., K. Burke, and M. Ernzerhof, 1996a, Phys. Rev. Lett. 77, 3865. Perdew, J. P., K. Burke, and Y. Wang, 1996b, Phys. Rev. B 54, 16533. Perdew, J. P., K. Burke, and M. Ernzerhof, 1997, Phys. Rev. Lett. 78, 1396.

Handbook of Nanophysics: Principles and Methods

Rapaport, D. C., 1998, he Art of Molecular Dynamics Simulation (Cambridge University Press, Cambridge, U.K.). Rytkönen, A., H. Häkkinen, and M. Manninen, 1998, Phys. Rev. Lett. 80, 3940. Schmidt, M. and H. Haberland, 2002, C. R. Phys. 3, 327. Schmidt, M., R. Kusche, W. Kronmüller, B. von Issendorf, and H. Haberland, 1997, Phys. Rev. Lett. 79, 99. Schmidt, M., R. Kusche, B. von Issendorf, and H. Haberland, 1998, Nature 393, 238. Shvartsburg, A. A. and M. F. Jarrold, 2001, Phys. Rev. Lett. 85, 2530. Shvartsburg, A. A., M. F. Jarrold, B. Liu, Z. Y. Lu, C. Z. Wang, and K.-M. Ho, 1998, Phys. Rev. Lett. 81, 4616. Silvi, B. and A. Savin, 1994, Nature 371, 683. Stanley, H. E., 1987, Introduction to Phase Transitions and Critical Phenomena (Oxford University Press, New York). Szwacki, N. Z., A. Sadrzadeh, and B. I. Yakobson, 2007, Phys. Rev. Lett. 98, 166804. Wales, D. J., 2003, Energy Landscapes: With Applications to Clusters, Biomolecules and Glasses (Cambridge University Press, Cambridge, U.K.). Wales, D. J. (ed.), 2005, Intermolecular Forces and Clusters—II (Springer, Berlin, Germany). Zorriasatein, S., K. Joshi, and D. G. Kanhere, 2007a, Phys. Rev. B 75, 045117. Zorriasatein, S., M.-S. Lee, and D. G. Kanhere, 2007b, Phys. Rev. B 76, 165414.

19 Melting Point of Nanomaterials Pierre Letellier Université Pierre et Marie Curie-Paris 6

Alain Mayaffre Université Pierre et Marie Curie-Paris 6

Mireille Turmine Université Pierre et Marie Curie-Paris 6

19.1 Introduction ...........................................................................................................................19-1 19.2 Is the Gibbs hermodynamics Adapted to Describe the Behaviors of Nanosystems?.....................................................................................................................19-1 19.3 he Bases of Nonextensive hermodynamics ...................................................................19-2 Conceptual Bases of Nonextensive hermodynamics • Application of the NET to Solid–Liquid Equilibrium • Melting Point

19.4 Application to the Melting Temperature of a Nonextensive Phase ...............................19-5 Extensity Is an Area • General Case. Power Laws: Consequence of the NET

19.5 Analyses of Published Data ..................................................................................................19-7 Nanoparticles • Nanowires • Films • Melting Point Elevation

19.6 Conclusion ............................................................................................................................19-10 References......................................................................................................................................... 19-11

19.1 Introduction When we try to deine what is a nanomaterial or a nanoparticle, the irst idea that comes to our mind is to specify its size. Whether it is a sphere, a crystal, a wire, or a i lm, we admit that at least one of its dimensions is of the order of few nanometers. But this geometrical deinition is insuicient to assess whether the system has the properties of a nanomaterial. Indeed, the “measured size” of a nanomaterial essentially depends on the method of analysis that is available. he shape of these nanoelements is oten complicated and complex and they are rarely identical to one another. Generally, we know that we are faced with a nanomaterial if the latter shows physicochemical properties and reactivity very diferent compared to what they exhibit on a macroscale. For instance, copper (Zong et al., 2005), which is an opaque substance in the macroscopic scale, becomes transparent in nanoscale, inert materials (such as platinum, Sasaki et al., 1999) attain catalytic properties, stable materials (as aluminum, Kuo et al., 2008) turn combustible, insulators (as silicon, Lechner et al., 2008) become conductors. At nanometric scale, noble metals like silver (Li and Zhu, 2006) and gold embedded as nanoparticles (Shi et al., 2000) in a silica matrix, react with hydrochloric acid, leading to the metal chloride with hydrogen release. he characterization of a nanomaterial, besides the determination of its structure, implies necessarily the determination of its physicochemical properties and its reactivity. But since they are diferent from those of the material in the macroscopic state, it is fundamental to understand why and to wonder about the use of the traditional thermodynamics of Gibbs to describe the behavior of such systems.

19.2 Is the Gibbs Thermodynamics Adapted to Describe the Behaviors of Nanosystems? The strict application of the Gibbs thermodynamics to nanometric systems does not allow to account properly for the physicochemical properties of these systems. Indeed, this approach predicts that for a material, a number of parameters remain constant and independent of the mass of the system. This is the case of saturated vapor pressure of liquids, their boiling and crystallization points, and the melting point of pure solids. But, experience shows that for these same systems considered at nanoscale, the value of these parameters depends on the size, the shape, and the mass of the considered systems. In the traditional Gibbs thermodynamics, there is no way to account for this type of behavior. his is due to the fact that Gibbs thermodynamics is extensive and that the parameters previously mentioned are of intensive magnitudes; that is, they do not depend on the mass of the system. hus, to account for the physicochemical properties of nanosystems, it is necessary to make the thermodynamics nonextensive. One of the mostly used ways to introduce the nonextensivity is to introduce into the thermodynamic equations Laplace’s law. his law assumes that the pressure inside a nanoparticle is higher than the surrounding pressure and dependent on the surface tension. For a spherical particle of radius r, this diference of pressure is expressed as Pint − Pext =

2γ r

(19.1) 19-1

19-2

Handbook of Nanophysics: Principles and Methods

where γ is the surface tension r the radius of the particle hen the equilibrium condition between the particle and its environment is expressed by a null nonisobare chemical ainity. hus, for a particle i in equilibrium with its environment, one can write Ai =

Pint

μi (int) − Pext μi (ext) = 0

⎛ ∂μ i (int) ⎞ * = Vi (int) ⎝⎜ ∂P ⎠⎟ T

(19.3)

hat leads to μi(int) =

Pext

μi(int) + Vi*(int) (Pint − Pext ) =

Pext

* 2γ = μ i(int) + Vint r

Pext

μ i(ext)

(19.4) In the case of a liquid drop of radius r in equilibrium with its vapor at the pressure Pi, one can ind μ i*(liq) + Vi*

2γ = μi*(gaz) + RT ln{Pi } r

(19.5)

If Pi* is the vapor pressure of i at equilibrium with its pure liquid in the form of unlimited phase (Defay, 1934), ln

Pi V * 2γ = i Pi* RT r

(19.6)

he Kelvin’s relation is then found. When r decreases, the vapor pressure, at equilibrium, increases. Obviously, other characteristic properties of pure compounds and especially the melting point of a spherical solid nanoparticle of radius r can be described in the same way. he phenomenon of melting point depression for nanosolids was irst described at the beginning of the twentieth century (Pawlow, 1910) by the Gibbs–hompson relation. his links the diference between the melting point of the particle, Tx, and the melting point of the material, Tm, in unlimited phase form (Defay, 1934) (no size efect), by T V 2γ SL Tm − Tx = ΔT = m (Tx ) ΔH m r

dU = T dS − P dV +

(19.2)

he chemical potential of i at the internal pressure can be expressed at the external pressure by supposing that its molar volume does not depend on the pressure,

Pint

properties of nanoparticles with their size, the method is fundamentally questionable, because it introduces a condition of nonextensivity into reasoning whose consistency stems from the fact that it is extensive. If it is well accepted to place the particular properties of the nanosystems in their interfacial energy, the classic way of writing it in the expression of the internal energy does not allow escaping from the extensivity:

(19.7)

At temperature Tx, V(Tx ) is the molar volume of the solid, γ SL is the surface tension between the solid and the liquid, and ΔHm is the melting molar enthalpy of the solid (ΔHm > 0, endothermic). his type of development has been thoroughly discussed by Defay and Prigogine in their book (Defay and Prigogine, 1966). If the introduction of Laplace’s law in the equations of thermodynamics allows reporting the variation of physicochemical

∑ μ dn + γ dA i

i

(19.8)

where A is the area γ is the surface tension In this expression, S, V, ni, and A are extensive magnitudes. his implies that if the mass of the system is multiplied by λ, the values of these extents will also be multiplied by λ. It is the condition so that T, P, μ, and γ are intensive extents. When we introduce artiicially Laplace’s law in the equilibrium relations, the chemical potential is then dependent on the size of the system. hey are no more intensive extents. Beyond this fundamental point, the approach, which consists in introducing Laplace’s law, does not allow to report correctly a number of situations. Very oten, real particles of nanosolid are not, in general, perfect spheres. his is the case, for example, of mineral or organic crystals and their assemblies, of polymer aggregates, and of ilms. For some materials, like microporous materials, it is diicult to describe their spatial structure from the classical geometrical variables of dimension (volume, surface, length) and some authors (Jaroniec et al., 1990) have suggested using fractal approaches. In such conditions, it is unreal to deine a geometrical surface; the notion of area does not have a meaning anymore. he variations of certain extents such as the melting points with the size of the particle can be in one way or in an opposite way according to the conditions of the experiment. he conclusion of this is that it is not enough to introduce artiicially a nonextensivity condition into the thermodynamics to have a tool of analysis, because the latter also has to be autoconsistent. It is the reason for which we introduced a non extensive thermodynamics which we widely illustrated in various domains of the physics and in particular for the melting points of nanoparticles.

19.3 The Bases of Nonextensive Thermodynamics In 2004, we introduced the bases of a nonextensive thermodynamics (NET) adapted to the description of physicochemical behaviors of complex systems (Turmine et al., 2004) for which the interfaces are geometrically ill-dei ned (including porous systems, interpenetrated phases, dispersed solutions, nanoparticles, and i lms). he contribution of the shape of the system to its properties is not a characteristic of the system’s chemistry itself. In physics, there are some systems for which the state

19-3

Melting Point of Nanomaterials

variables depend on their shape and their size: for example, the potential diference between the ends of a capacitor depends on its shape (Tsallis, 2002). his type of observation has led numerous physicists (Tsallis et al., 1998, Lavagno, 2002, Vives and Planes, 2002, Abe and Rajagopal, 2003) to consider the unicity of the thermodynamic formulations and to question the fundamental law that posits that state functions must be strictly extensive. Statistical analyses diferent from the standard Boltzmann formalisms indicate that a diferent type of thermodynamics can be constructed based on a nonextensive form of the entropy. Currently, the physics literature contains references to more than 20 diferent entropic forms. h is fruitful relection has not been exploited or indeed even considered in chemistry. We successfully applied our nonextensive thermodynamic approach to various systems such as the wettability phenomena (Letellier et al., 2007a), solubility of nanoparticles (Letellier et al., 2007c), redox properties (Letellier et al., 2008b), and also micellar solution properties (Letellier et al., 2008a). he basis of NET is identical to that of classical thermodynamics, with the same functions of state, but NET supposes that these functions of state can be nonextensive. his property is introduced by means of integer or fractional thermodynamic dimensions. As a result, various physicochemical behaviors can be described by power laws without resorting to the concept of fractality. To explain our approach, we will irst describe some of the underlying principles of NET.

19.3.1 Conceptual Bases of Nonextensive Thermodynamics Let us consider a system deined by its content (n1, n2, ni moles) in contact with its environment by a geometrically ill-deined interface. We chose not to try to specify the exact borders of this system and to characterize its interface(s) with the environment by an interfacial energy. By convention, we call these interfaces “fuzzy interfaces” (Figure 19.1). he description of the behavior of this system requires the usual variables, S, V, and ni, and a variable of extensity χ. he internal energy can then be written

NEP

dU = T dS − P dV +

∑ μ dn + τ d χ i

i

(19.9)

where τ is an intensive tension extent, associated with χ. he product τdχ characterizes the contribution of the interfacial energy to the internal energy. he form of this relation is classical (Hill, 2001a) and in the case of interfacial systems, χ is associated with area and τ with surface tension. Classically, in thermodynamics, the variables of extensity associated to tension extents are assumed to be extensive variables, i.e., Euler’s functions of the system mass of order m = 1. We considered the possibility that they are not extensive (m ≠ 1). Adopting this condition, the notion of nonextensivity is introduced in the expression of the internal energy (U). he internal energy, remaining a function of state, has all the mathematical properties associated to these functions. his implies new relations between the variables of state and in particular with χ. In a system consisting of n1 moles of 1, n2 moles of 2, and ni moles of i, the extensity χ is a function of the system mass χ = χ(n1 , n2 , ..., ni )

(19.10)

By convention, this extent has the property of Euler’s function of order m. If the system content is multiplied by λ, then χλ = χ(λn1 , λn2 , ..., λni ) = λ m χ

(19.11)

he parameter m is the degree of homogeneity of the Euler’s function, named by convention, the thermodynamic dimension of the system. In this approach, the thermodynamic dimension is deined with regard to the mass of the system. Its value can be equal to 1, in which case classical thermodynamics apply. he introduction of nonextensive thermodynamics in the extensity magnitudes implies that the functions of state of thermodynamics (U, S, etc.) are not extensive. Consequently, the tension extents associated with the extensities may not be intensive. We chose, by convention, to conserve this property for the temperature T* and for τ. For consistency, the chemical potentials and the pressures become nonintensive extents; this means that they vary with the systems’ mass. We have now to link the pressure variations to the variables of dimension. For this, a volume EV is deined for the environment and a volume NEV for the nonextensive phase. he system being at equilibrium, the sum of resulting works has to be null. herefore − Pd EV − NE Pd NEV + τ dχ = 0

(19.12)

Assume that NEV increases. Moving the “fuzzy interface” involves P

FIGURE 19.1 Scheme of fuzzy interface. NE P is the pressure of the nonextensive phase and P is the pressure of the environment.

d NEV = −d EV

(19.13)

* In physics, there are several developments of nonextensive thermodynamics using conventions in which the temperature is considered as a nonintensive variable, see for example, Abe et al. (2001) and Toral (2003).

19-4

Handbook of Nanophysics: Principles and Methods

and as the state of the system remains the same, NE

P−P =τ

dχ d NEV

(19.14)

Liquid Tx

he value of the ratio dχ/dNEV i xes the way in which dimensions of the system evolve in the transformation. his equation can be also explained by noting that the variables χ and NEV are homogeneous functions of diferent orders of the same dimension content. his implies that χ is a homogeneous function of order m with regard to NEV, which is expressed by the relationship mχ =

dχ d NEV

NE

V

P −P =τ

dχ τχ = m NE NE d V V

(19.16)

his is one of the most important results of our research. his relation generalizes Laplace’s relationship for nonextensive systems. It does not involve a radius of curvature or precise geometrical borders of the nonextensive system but is deined only from physicochemical parameters. his obviously allows the solution to be found if the geometry is simple. In the case of liquid drop of interfacial tension γ LV, radius r, and volume V, the pressure diference between the inside of the drop (NE P = Pd) and the external pressure of the gaseous atmosphere is obtained by introducing the interfacial parameters into Equation 19.16, τ = γ LV, χ = ALV. Note that when the drop volume is multiplied by λ, the area ALV is multiplied by λ2/3. he area is then an extensity of dimension m = 2/3 toward the mass or the drop volume. he liquid drop is a nonextensive phase with a thermodynamic dimension equal to 2/3. We can write (Pd − P ) = m

τχ 2 γ LV ALV γ LV = =2 V 3 V r

Solid, nonextensive phase

(19.15)

and for the pressure diference NE

m,

(19.17)

which corresponds to Laplace’s relationship.

19.3.2 Application of the NET to Solid–Liquid Equilibrium At irst, we will apply these NET deinition relations to the change of melting point of a nanosolid, when the size and the shape are modiied. We will assume that the solid constitutes a nonextensive phase (Figure 19.2).

19.3.3 Melting Point he equilibrium between the nanosolid in the form of a nonextensive phase and the liquid at the melting point Tx is expressed by writing the equality of the chemical potentials of the compound in its two forms. he solid (S) is at the pressure NEP in the nonextensive phase, and the liquid (liq) is subject to the external pressure P:

FIGURE 19.2 Scheme of the considered system. he nanosolid constitutes a nonextensive phase of dimension m and of extensity χ. his solid is in contact with the liquid phase at temperature Tx. (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

NE

P

μ(S ,Tx ) = P μ(liq,Tx )

(19.18)

At temperature Tx and constant content, the chemical potential of pure solid varies with the pressure P according to Equation 19.3. he integration of this expression leads to NE

P

μ(S ,Tx ) = P μ(S ,Tx ) + V(Tx ) (NE P − P )

(19.19)

V(Tx ) is the molar volume of pure solid at temperature Tx. By considering the volume V which corresponds to the volume occupied by the nanosolid in the system, then NE

P

μ (S ,Tx ) = P μ (S ,Tx ) + V(Tx )m τ

χ V

(19.20)

At the pressure P of the environment, the equilibrium condition (Equation 19.18) can be written as μ (liq,Tx ) = μ (S ,Tx ) + V(Tx )m τ

χ V

(19.21)

he pressure being constant (isobar condition), we removed P from the notation of the chemical potential for clarity. he free energy of melting at temperature Tx, ΔGm(Tx ), is linked to the characteristic parameters of the nonextensive phase: μ(liq,Tx ) − μ(S ,Tx ) = ΔGm(Tx ) = V(Tx )m τ

χ V

(19.22)

At the melting temperature of the solid in the form of an unlimited phase (Tm), the melting free energy is null. he integration of the Gibbs–Helmholtz relation between Tm and Tx leads to Tx

ΔGm(Tx ) dT = − ΔH m 2 Tx T

∫

Tm

(19.23)

19-5

Melting Point of Nanomaterials

where ΔHm is the melting molar enthalpy of pure solid at ambient pressure P. As the melting enthalpy varies slightly in the temperature range considered for integration, one can write ⎛ T ⎞ χ ΔGm(Tx ) = ΔH m ⎜ 1 − x ⎟ = V(Tx )m τ T V m ⎝ ⎠

(19.24)

hen, the melting temperature Tx of the nonextensive phase can be easily linked to the melting point Tm of the unlimited phase by the following equation, which can be written in two diferent ways: Tm − Tx = ΔT = Tm

V(Tx )m τ(χ/V ) M °m τ(χ/M ) = Tm ΔH m ΔH m

(19.25)

where M° is the molecular weight M the mass of the solid

In our approach, this problem does not explicitly appear because Equation 19.25 is based on a property of the system’s response to the variations of its mass (extensity); neither the interfacial area nor the use of Laplace’s relation is required. hus, it seems appropriate to express the previous equilibrium without identifying the tension τ as the interfacial tension γ SL in the Gibbs–hompson law and to write the depression melting point in the form ΔT =

Consider irst the case where the geometry of the nonextensive phase is suiciently well deined for the extensity χ to be identiied with an area.

We will proceed on this basis for the following cases.

Equation 19.25 can be used to address the case of particles of diverse forms, and especially those corresponding to classical unit cells, for example, a cube of edge a and of volume a3. Initially, the thermodynamic dimension of the system, m, is determined by multiplying its mass by a number λ and leaving its shape unchanged. In this operation, the volume will also be multiplied by λ (at constant density) whereas the surface area of the cube, 6a2, will be multiplied by λ2/3. he thermodynamic dimension of the system is m = 2/3. hen ΔT = Tm

19.4.1 Extensity Is an Area 19.4.1.1 Gibbs–Thompson Law Consider a solid particle of spherical shape of radius r in equilibrium with a molten liquid. In this case, dimension m is equal to 2/3. If the extensity is identiied with the solid–liquid area, ASL , the tension τ with the surface tension γ SL , the volume of the nonextensive phase to that of the particle, the Gibbs–hompson relation is then found: TmV(Tx ) ΔH m

⎛ 2 SL 4 πr 2 ⎞ TmV(Tx ) 2 γ SL ⎜ γ (4/3)πr 3 ⎟ = ΔH r m ⎝3 ⎠

(19.27)

19.4.1.2 Particle Is Not Spherical

19.4 Application to the Melting Temperature of a Nonextensive Phase

ΔT =

TmV(Tx ) 2τ ΔH m r

(19.26)

Note that this relation supposes that the solid–liquid surface tension γ SL is experimentally accessible, because the melting temperature variations of a material in spherical particles of known sizes can be accurately determined. he same is true for the Ostwald–Freundlich expression, which governs nanoparticle solubility. It is thus surprisingly simple to determine an extent that is generally calculated by semiempirical approaches and wettability studies (Kwok and Neumann, 1999, 2000, Graf and Riegler, 2000). However, in addition to the experimental dificulties of determining the particle size (and the particles must be spherical), the introduction of a solid–liquid interfacial tension assumes that the interface is at equilibrium and of constant curvature: this can only be an assumption in the case of a solid. he result is that the validity of the determination of γ SL by this method is uncertain.

V(Tx ) (2/3)τ(6a2 /a3 ) TmV(Tx ) 4 τ = ΔH m ΔH m a

(19.28)

he melting point depression of a cubic nanosolid is related to the length of the cube edge. he depression is greater as the edge length decreases. Our approach has its limitations because the extensities of some structures do not always display the properties of Euler’s functions. Consider, for example, a cylindrical particle of height h whose base is of diameter d (Figure 19.3). Suppose that the particle grows without any change in base area but with increasing height h. he cylinder volume is V = (πd 2/4)h and the area A = 2(πd2/4) + πdh. If the cylinder mass is multiplied by λ, only h will be multiplied by λ and consequently the surface area of cylinder will become Aλ = 2(πd2/4) + λπdh. In this case, the area is not an Euler’s function of the mass and the relations of NET do not apply. For this reason, it must be systematically veriied that the extensity is an Euler’s function of the mass before Equation 19.25 can be applied. However, for cylindrical particles that are suiciently long for the surface area of the base to be negligible relative to the surface area of the sides (h ≫ (d/2)), the total surface area approximates to an Euler’s function of order one of the mass: the dimension of the system is 1. hen, ΔT = Tm

V(Tx )τ(4 πdh/πd 2h) TmV(Tx ) 4 τ = ΔH m ΔH m d

(19.29)

In this case, the melting point depression of particles is dependent on the cylinder diameter but is independent of its length.

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Handbook of Nanophysics: Principles and Methods

particle size decreases: this is the classical behavior. However, theory does not require this behavior. Indeed, situations in which m or τ(Y) are negative can be envisaged, leading to the opposite phenomenon, i.e., an increase in the melting point as particle size decreases. Behavior of this type has been observed, mostly for particles embedded in a matrix (Sun et al., 1997, Zhang et al., 2000b, Lu and Jin, 2001) and for Vycor glass as reported by Christenson (2001).

λM λM a h

M

M

19.4.2.1 Case of Nanoparticles of Dimension m and of Mass M P d

FIGURE 19.3 Two kinds of geometrically dei ned particles are considered. heir mass is multiplied by λ. he cube increases in size with no change in shape. he cylinder increases in size with no change in base area. (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

Above, we considered a mass of solid without specifying its state of division We will now examine the behavior of a solid in the form of identical nanoparticles, having the same property of nonextensive phase of dimension m. he mass of a particle is Mp, its volume, Vp, and its extensity χp. We will assume that any addition of solid to the system will only increase the number, N, of nanoparticles. his situation is described by the following relations:

here are many examples which can be used to illustrate the value of applying Equation 19.25 to objects of various sizes and forms. We will consider the case of real nanoparticles whose spatial structure cannot be described simply from classical dimensions (volumes, areas, lengths).

(19.30)

where k is a characteristic constant of the nonextensive phase considered. h is condition combined with Equation 19.25 leads to M °m τk m −1 M ΔH m

(19.31)

his can be written in logarithmic form ⎛ M °mY ln(ΔT ) = ln ⎜ Tm ΔH m ⎝

⎞ ⎟ + (m − 1)ln M ⎠

(19.33)

and then

Consider a given mass, M, of solid presumed to constitute a nonextensive phase. he extensity χ is a homogeneous function of order m of the system mass, so the ratio between χ and M is a homogeneous function of order (m − 1) of the solid mass. h is corresponds to

ΔT = Tm

χ = N χp χ χp = = kM pm −1 V Vp

19.4.2 General Case. Power Laws: Consequence of the NET

χ = kM m −1 M

M = NM p

(19.32)

To simplify the notation, the product τk is replaced by Y. Y is a characteristic extent of the solid. Its unit, u, depends on the value of m, u = J kg−m. hus, we show that the melting point depression or elevation of a nanosolid follows a power law of the particle mass. For the melting point of the nanosolid Tx to ind its value Tm when the solid mass becomes large (unlimited phase), it is necessary that m < 1. Equation 19.31 implies that for positive m and τ, the melting point of the nanosolid must be depressed as the

⎛ M °mY ln(ΔT ) = ln ⎜ Tm ΔH m ⎝

⎞ ⎟ + (m − 1)ln M p ⎠

(19.34)

he depression or elevation of the melting point then depends on the nanoparticle mass according to a power law. 19.4.2.2 Applications to Real Systems he validity of the previous relations is diicult to judge because the data in the literature concerning melting point depression are generally given according to the “particle size.” Size may be described by a radius for presumed spherical particles, a diameter for nanowires, or a thickness for ilms. We thus modiied the form of the previous equations so as to make them more generally applicable and take into account all measurements reported in the literature without considering particular shapes for the nanosolids. Our reasoning is as follows. Assume that the nanosolid size is characterized by a geometrical dimension (radius, diameter, thickness), which is denoted by ω. We will suppose that the extensity, χ, and the volume are Euler’s functions of ω so V = V(ω ) = αω q χ = χ(ω) = βω

(19.35)

p

he pressure diference between the nonextensive solid phase and the solution is then written as

19-7

Melting Point of Nanomaterials

NE

P−P =τ

dχ β p = τ α q ω p −q dV

3.0

Similar reasoning leads to the melting temperature variation with the size, ω, of the particles according to a power law:

2.6

V(Tx ) (β /α)τ p p −q M °Yω p η q ω = Tm ΔH m q ω ΔH m

(19.37)

By convention, we will note p − q = η and Yω = (V(Tx ) /M °)(β /α)τ . he form of the Gibbs–hompson relation can be veriied by taking the radius as dimension ω = r, p = 2 and q = 3. In this case, for a compound of density ρ, Yω = (3γ SL/ρ) (J m kg−1). We will now test the validity of Equation 19.37 under its logarithmic form for published data: ⎛ M °Yω p ⎞ ln(ΔT ) = ln ⎜ Tm + η ln(ω) ΔH m q ⎟⎠ ⎝

2.2 1.8 1.4

ln(ΔT) = –0.79 ln r + 4.57

1.0 2

2.5

3

3.5

4

ln r

FIGURE 19.4 Plot of ln(ΔT) against ln(r) for Pb particles according to the data of Sun and Simon (2007). he diameter, r, is expressed in nanometers.

(19.38)

he plot of ln(ΔT) against the logarithm of the geometrical dimension, ω, chosen by the author of the study to characterize nanosolid size will only be a straight line if the extensities and the masses are Euler’s functions of dimension, and if variations of the parameters Yω , p, and q with the temperature are small.

930 928 926 Tx (per K)

Tm − Tx = ΔT = Tm

In ΔT

(19.36)

924 922 920 918

19.5 Analyses of Published Data 19.5.1 Nanoparticles First, consider the case where the nanosolid is in the form of nanoparticles. We will examine two series of data.

Example 19.1 We examined the results reported by Sun and Simon (2007) concerning the melting behavior of Al nanoparticles having an oxide passivation layer by diferential scanning calorimetry (DSC). Figure 19.4 shows ln(ΔT) plotted against the logarithm of the particle radius (in nanometers). The line of correlation is fair, with a y-axis intercept of 4.57 and η = −0.79, which is lower (in absolute value) than that corresponding to the Gibbs– Thompson relation (η = −1). From these two parameters, we can calculate the melting point for diferent values of nanoparticles’ radius. We compared in Figure 19.5 the experimental data and the calculated melting point from the parameters determined in Figure 19.4. The value of η takes into account both the nonextensivity of the mass and the extensity with respect to the measured dimension. This value indicates that if the mass varies with ω (with q = 3) as is generally the case, then the extensity, χ, of the nanoparticles would be of power p = 2.21 with respect to the nanoparticle radius. This value is higher than 2, which would be characteristic of an area. The result is that the extensity, χ, increases more quickly with ω than an area would.

916 914

0

10

20

30 r (per nm)

40

50

FIGURE 19.5 Experimental (dark points) and calculated (open squares) values of melting point, Tx, against the particle size (radius r) for aluminum nanoparticles (Data from Sun, J. and Simon, S.L., hermochimica Acta, 463, 32, 2007).

Example 19.2 We examined the melting behavior of tin nanoparticles (Lai et al., 1996). These particles are formed by thermal evaporation. For the small amounts of Sn deposited, the ilms are discontinuous and form self-assembled nanometer-sized islands on the inert substrate. According to the authors, in contrast to embedding metal particles in bulk matrix, this type of sample preparation produces spherical Sn particles with high purity and free surfaces; this system is thus ideal for studies of melting of small metal particles. We plotted the experimental ln(ΔT) against the logarithm of the particle radius (in nm) in Figure 19.6. Once again, an excellent linear correlation is found; the y-axis intercept is 5.995 and the slope is η = −1.20, lower than −1, which corresponds to spherical particles. Contrarily to the previous case, the extensity, χ, increases less quickly than the area with the particle radius: p = 1.8. Thus, it seemed that in the irst example the nanoparticles of Al were not spherical.

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Handbook of Nanophysics: Principles and Methods

An excellent linear correlation is obtained with a y-axis intercept of 4.27 and a slope η = −0.57. his behavior is very diferent from that observed for nanoparticles; indeed if one supposes that q = 3 as above, then p is equal to 2.43. In this case, the extensity increases more quickly than the particle area and obviously does not follow the Gibbs–hompson law, contrary to the expectations of the authors.

4

ln ΔT

3

2

19.5.3 Films

ln ΔT = –1.20 ln r + 5.995 1

Films of nanometric thickness can be considered alongside nanoparticles: the dimension ω is in this case the i lm thickness. Two series of data extracted from the literature will be analyzed.

0 2

3 ln r

FIGURE 19.6 Plot of ln(ΔT) against ln(r) for tin particles. Data from Lai et al. (1996). ΔT is the melting point depression in degrees Celsius and r is the particle radius in nanometers. (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

19.5.2 Nanowires Metal nanowires have attracted a great deal of research interest in recent years, because of their importance in fundamental low-dimensional physics research as well as for technological applications. he melting behavior of Zn nanowires with various diameters embedded in the holes of a porous anodic alumina membrane has been studied (Wang et al., 2006). hese nanosolids are particularly interesting because they are assumed to be composed of one-dimensional nanostructures. Diferential scanning calorimetry showed that the melting temperature of the Zn nanowire arrays was strongly dependent on nanowire size. We report the values of the logarithm of melting point depression against the logarithm of nanowire diameter (in nanometers) in Figure 19.7.

Example 19.3 Bismuth ilms (Olson et al., 2005): The particles were formed by evaporating bismuth onto a silicon nitride substrate, which was then heated. The particles self-assemble into truncated spherical particles. At mean ilm thicknesses below 5 nm, mean particle sizes increased linearly with deposition thickness but for 10 nm-thick ilms, particle size increased rapidly. A plot of the logarithms of melting point depressions against ilm thickness is given in Figure 19.8. A reasonable linear correlation is obtained. The y-axis intercept is 2.78 and the slope is η = −0.94, which as for nanowires, is greater than −1. Supposing that q = 3, the extensity varies more than the area with the increase of the nanoparticle ilm thickness (p = 2.06).

Example 19.4 The melting point depression phenomenon can also be considered for organic nanosolids. Thus, the behavior of ilms of triglyceride nanoparticles (Figure 19.9) was studied (Unruh et al., 2001).

ln ΔT 5

ln ΔT

2

4 ln ΔT = –0.57 ln D + 4.27

3

1 ln ΔT = –0.94 ln h + 2.78 0

2 1

3

4

5 ln D

FIGURE 19.7 Plot of ln(ΔT) against ln(D) for zinc nanowires in an alumina matrix (Data extracted from Wang et al. (2006). ΔT is the melting point depression in degrees Celsius and D is the particle diameter in nanometers. (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

ln h

0 –2

–1

0

1

FIGURE 19.8 ln(ΔT) plotted against ln(h) for bismuth i lms. h is the thickness of the i lm in nanometers. Data extracted from Olson et al. (2005). (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

19-9

Melting Point of Nanomaterials

19.5.4 Melting Point Elevation

ln ΔT

2

1.5 ln ΔT = –0.71 ln h + 4.16

1 2.5

3

3.5 ln h

FIGURE 19.9 Plot of ln(ΔT) against ln(h) for i lms of triglycerides. h is the thickness of the i lm in nanometers. Data extracted from Unruh et al. (2001). (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

The linear correlation is satisfactory. The y-axis intercept is 4.16 and the slope is η = −0.71; this is greater than −1 as was the case for mineral ilms. Supposing that q = 3, the extensity varies more than the area with the increase of the nanoparticle ilm thickness (p = 2.29). The description of the behavior of ilms is worse than those for the previous examples. This is probably because ilms consist of nanosolids in juxtaposition.

he equations that we have developed can also be used to consider melting point elevation. his situation is mainly found for particles that are coated or embedded in a matrix (Grabaek et al., 1990, Chattopadhyay and Goswami, 1997, Jiang et al., 2000, Zhang et al., 2000a,b, Lu and Jin, 2001). here are many explanations proposed for this phenomenon. All these explanations use the interfacial energy between the liquid compound and the solid constituting the matrix. It is certain that for embedded particles, the borders between the particle and its environment are very badly deined geometrically; we show, below, that our approach can be used to overcome this problem. We analyzed the published values (Lu and Jin, 2001) concerning the variations of melting point with the particle size for nanoparticles of In embedded in an Al matrix. Two kinds of In/Al nanogranular samples were prepared by means of melt-spinning and ball-milling. For melt-spun nanoparticles, the melting point increased as the particle size decreased, whereas for ball-milled nanoparticles the melting point decreases with particle size. We exploited these two data series. For the melting point elevation series, we changed the sign in relation 38 such that extents were positive under the logarithmic terms, ⎛ M °Yω p ⎞ ln(Tm − Tx ) = ln ⎜ Tm + η ln(ω) ΔH m q ⎟⎠ ⎝

(19.38’)

he ln/ln correlations are excellent for both melting point elevation and depression data series. We plotted the experimental data and the calculated values (Figure 19.10) with the following parameters.

200

Tx (°C)

180

Tm = 156.6°C

160

140

120

0

20

40

D (nm)

60

80

FIGURE 19.10 Experimental (black points) and calculated (open squares) values of melting point, Tx, against the particle size (diameter D) for In nanoparticles embedded in an Al matrix prepared by melt-spinning (triangles) and ball-milling (diamonds) (Lu and Jin, 2001). (Reprinted from Letellier, P. et al., Phys. Rev. B, 76, 8, 2007b. With permission.)

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Handbook of Nanophysics: Principles and Methods

For melting point elevation, η = −0.805 and the y-axis intercept is 5.203. For melting point depression, η = −1.149 and the y-axis intercept is 5.858. For the melting point depression, if we take q = 3 for the volume dimension, then p = 1.851. hus, the extensity varies less quickly than the area with the particle mass. In the case of the melting point elevation, the value of τ is negative. p is equal to 2.195, taking, by convention, q = 3. hus, the extensity varies more quickly than the area with the particle mass. h is approach allows a description of the particle and its matrix. According to the matrix structure or the particle shape, one of these two behaviors is observed; the sign of τ expresses and formalizes this diference of behavior. hus under constraint, the sign of τ can be reversed.

Remark 19.1: To analyze the behaviors of embedded particles, we considered only one extensity χ. h is seems suicient in the case examined to provide a good representation of the experimental results. However, since the growth of a system in contact with a substrate or a matrix is considered, other dimensions can intervene. h is is illustrated by Auer and Frenkel in a recent article (Auer and Frenkel, 2003) in which they show the importance of the line tension in the phenomenon of aggregation. h is raises the issue of the form of the relations we propose in such a situation. In fact, these relations can easily be generalized and we can use several extensities. Equation 19.16 becomes NE

P −P =

dχ i

χi

∑ τ dV = ∑ m τ V i

i

i

i

(19.39)

i

When one of these extensities is a triple line, then NE

P−P =

∑ m τ Vχ + m i

i

i

line

i −1

τlineχ line V

(19.40)

In this case, the dimension mline is then equal to 1/3 τline is the line tension χline is the length of the considered line he exploitation of this relation is possible only if the particle shape is known and if its interfaces with the matrix can be characterized geometrically. An application of this is found in a paper concerning contact angles (Letellier et al., 2007a), in which we show that for nanodrops, the term for line tension can become dominant in Equation 19.40.

19.6 Conclusion Our conclusion is an answer to a question: “Is the nanometric the world nonextensive?” he response is obviously, yes, the world of nanomaterials is nonextensive. We could furthermore

formulate otherwise this assertion by saying that the thermodynamics is generally nonextensive, but the macroscopic world is a particular case where thermodynamics is extensive. he extension we proposed for thermodynamics allows describing from the same laws the behavior of matter between the nanoscopic and the macroscopic scale. When the NET relations are applied to the melting of pure components, we showed that for nanomaterials, the melting point depression of nanosolids follows a power law with respect to their geometrical dimensions, as do nanoparticles, nanowires, and ilms. he NET relations provide a theoretical justiication for these behaviors and give a meaning to the various parameters implied in these laws. Note, however, that our indings have their limitations. he irst and undoubtedly most important is that the extensions that we propose address only small particles, without nuclearity being too weak (i.e., made of few atoms or molecules). Many authors assume that for these systems there is a new state of matter, intermediate between the atom and the crystal (Belloni et al., 1982, Belloni, 2006). Kubo (Kubo, 1962) thus suggests that an isolated atom, or a few atoms linked together in a cluster for example in a molecule, should be considered to possess discrete electron levels, introducing a quantum-size efect. It has been shown, indeed, that the thermodynamic properties of a metallic cluster vary with the number of atoms, n, which it contains, in solutions (Henglein, 1977) or in the vapor phase (Morse, 1986, Schumacher et al., 1988). Concerning melting points, the calorimetric measurements reported by Jarrold and co-workers (Shvartsburg and Jarrold, 2000, Breaux et al., 2003) indicate that small clusters of tin and gallium—in the size range of 17–55 atoms—have higher than bulk melting temperatures (Tm bulk). A striking experimental result from the same group showed extreme size sensitivity in the nature of the heat capacity of Ga clusters of 30–55 atoms (Breaux et al., 2004). Recently, Joshi et al. (2006) presented a study of extensive ab initio molecular dynamic simulations with Ga 30 and Ga 31, where they attribute the origin of this size sensitivity of heat capacities to the relative order in their respective ground state geometries. It turns out that the addition of even one atom changes the heat capacity dramatically. he relations that we propose make sense if the aggregates have suicient nuclearity for average behaviors to appear, and this implies several hundreds of atoms, and sizes higher than 1 nm (a spherical aggregate of silver of 2 nm comprises approximately 2000 atoms). his condition of size is not the only one that limits the application of the relations we suggest. hey can apply only if • he system is at equilibrium. • he variation of parameters p, q, Yω , or their association is largely independent of the temperature. his property cannot be taken as a general condition. Our analysis shows that for systems of a nanometric magnitude, the laws of thermodynamics must be reconsidered (Hill, 2001b,c).

Melting Point of Nanomaterials

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Jiang, Q., Zhang, Z., and Li, J. C. (2000) Superheating of nanocrystals embedded in matrix. Chemical Physics Letters, 322, 549–552. Joshi, K., Krishnamurty, S., and Kanhere, D. G. (2006) “Magic melters” have geometrical origin. Physical Review Letters, 96, 135703-1–135703-4. Kubo, R. (1962) Electronic properties of metallic ine particles. 1. Journal of the Physical Society of Japan, 17, 975–986. Kuo, Y.-C., Huang, H.-K., and Wu, H.-C. (2008) hermal characteristics of aluminum nanoparticles and oilcloths. Journal of Hazardous Materials, 152, 1002–1010. Kwok, D. Y. and Neumann, A. W. (1999) Contact angle measurement and contact angle interpretation. Advances in Colloid and Interface Science, 81, 167–249. Kwok, D. Y. and Neumann, A. W. (2000) Contact angle interpretation: Re-evaluation of existing contact angle data. Colloids and Surfaces A-Physicochemical and Engineering Aspects, 161, 49–62. Lai, S. L., Guo, J. Y., Petrova, V., Ramanath, G., and Allen, L. H. (1996) Size-dependent melting properties of small tin particles: Nanocalorimetric measurements. Physical Review Letters, 77, 99–102. Lavagno, A. (2002) Relativistic nonextensive thermodynamics. Physics Letters A, 301, 13–18. Lechner, R., Stegner, A. R., Pereira, R. N., Dietmueller, R., Brandt, M. S., Ebbers, A., Trocha, M., Wiggers, H., and Stutzmann, M. (2008) Electronic properties of doped silicon nanocrystal ilms. Journal of Applied Physics, 104, 7. Letellier, P., Mayafre, A., and Turmine, M. (2007a) Drop size efect on contact angle explained by nonextensive thermodynamics. Young’s equation revisited. Journal of Colloid and Interface Science, 314, 604–614. Letellier, P., Mayafre, A., and Turmine, M. (2007b) Melting point depression of nanosolids: Nonextensive thermodynamics approach. Physical Review B, 76, 8. Letellier, P., Mayafre, A., and Turmine, M. (2007c) Solubility of nanoparticles: Nonextensive thermodynamics approach. Journal of Physics: Condensed Matter, 19, 9. Letellier, P., Mayafre, A., and Turmine, M. (2008a) Micellar aggregation for ionic surfactant in pure solvent and electrolyte solution: Nonextensive thermodynamics approach. Journal of Colloid and Interface Science, 321, 195–204. Letellier, P., Mayafre, A., and Turmine, M. (2008b) Redox behavior of nanoparticules: Nonextensive thermodynamics approach. Journal of Physical Chemistry C, 112, 12116–12121. Li, L. and Zhu, Y. J. (2006) High chemical reactivity of silver nanoparticles toward hydrochloric acid. Journal of Colloid and Interface Science, 303, 415–418. Lu, K. and Jin, Z. H. (2001) Melting and superheating of lowdimensional materials. Current Opinion in Solid State & Materials Science, 5, 39–44. Morse, M. D. (1986) Clusters of transition-metal atoms. Chemical Reviews, 86, 1049–1109. Olson, E. A., Efremov, M. Y., Zhang, M., Zhang, Z., and Allen, L. H. (2005) Size-dependent melting of Bi nanoparticles. Journal of Applied Physics, 97, 034304.

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Pawlow, P. (1910) he dependence of the melting point on the surface energy of a solid body. Zeitschrit Fur Physikalische Chemie-Stochiometrie Und Verwandtschatslehre, 65, 1–35. Sasaki, M., Osada, M., Higashimoto, N., Yamamoto, T., Fukuoka, A., and Ichikawa, M. (1999) Templating fabrication of platinum nanoparticles and nanowires using the conined mesoporous channels of FSM-16—heir structural characterization and catalytic performances in water gas shit reaction. Journal of Molecular Catalysis A-Chemical, 141, 223–240. Schumacher, E., Blatter, F., Frey, M., Heiz, U., Rothlisberger, U., Schar, M., Vayloyan, A., and Yeretzian, C. (1988) Metalclusters—Between atom and bulk. Chimia, 42, 357–376. Shi, H. Z., Bi, H. J., Yao, B. D., and Zhang, L. D. (2000) Dissolution of Au nanoparticles in hydrochloric acid solution as studied by optical absorption. Applied Surface Science, 161, 276–278. Shvartsburg, A. A. and Jarrold, M. F. (2000) Solid clusters above the bulk melting point. Physical Review Letters, 85, 2530–2532. Sun, J. and Simon, S. L. (2007) he melting behavior of aluminum nanoparticles. hermochimica Acta, 463, 32–40. Sun, N. X., Lu, H., and Zhou, Y. C. (1997) Explanation of the melting behaviour of embedded particles; equilibrium melting point elevation and superheating. Philosophical Magazine Letters, 76, 105–109. Toral, R. (2003) On the deinition of physical temperature and pressure for nonextensive thermostatistics. Physica A-Statistical Mechanics and Its Applications, 317, 209–212. Tsallis, C. (2002) Entropic nonextensivity: A possible measure of complexity. Chaos Solitons & Fractals, 13, 371–391.

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Tsallis, C., Mendes, R. S., and Plastino, A. R. (1998) he role of constraints within generalized nonextensive statistics. Physica A-Statistical Mechanics and Its Applications, 261, 534–554. Turmine, M., Mayafre, A., and Letellier, P. (2004) Nonextensive approach to thermodynamics: Analysis and suggestions, and application to chemical reactivity. Journal of Physical Chemistry B, 108, 18980–18987. Unruh, T., Bunjes, H., Westesen, K., and Koch, M. H. J. (2001) Investigations on the melting behaviour of triglyceride nanoparticles. Colloid and Polymer Science, 279, 398–403. Vives, E. and Planes, A. (2002) Is Tsallis thermodynamics nonextensive? Physical Review Letters, 88, 020601-1–020601-4. Wang, X. W., Fei, G. T., Zheng, K., Jin, Z., and De Zhang, L. (2006) Size-dependent melting behavior of Zn nanowire arrays. Applied Physics Letters, 88, 173114-1–173114-3. Zhang, L., Jin, Z. H., Zhang, L. H., Sui, M. L., and Lu, K. (2000a) Superheating of conined Pb thin ilms. Physical Review Letters, 85, 1484–1487. Zhang, Z., Li, J. C., and Jiang, Q. (2000b) Modelling for size-dependent and dimension-dependent melting of nanocrystals. Journal of Physics D-Applied Physics, 33, 2653–2656. Zong, R. L., Zhou, J., Li, B., Fu, M., Shi, S. K., and Li, L. T. (2005) Optical properties of transparent copper nanorod and nanowire arrays embedded in anodic alumina oxide. Journal of Chemical Physics, 123, 094710-1–094710-5.

20 Phase Changes of Nanosystems

R. Stephen Berry The University of Chicago

20.1 Introduction ...........................................................................................................................20-1 20.2 Evidence from Simulation of Bands of Coexistence of Phases of Small Nanoparticles ..........................................................................................................20-3 20.3 hermodynamic Interpretation of Bands of Coexisting Phases ................................... 20-6 20.4 Phase Diagrams for Clusters ............................................................................................... 20-8 20.5 Observability of Coexisting Phases ....................................................................................20-9 20.6 Phase Changes of Molecular Clusters ..............................................................................20-10 20.7 A Surprising Phenomenon: Negative Heat Capacities ..................................................20-12 20.8 Summary ...............................................................................................................................20-12 References.........................................................................................................................................20-13

20.1 Introduction Small nanoparticles, notably those consisting of only tens or hundreds of atoms or molecules, have a kind of behavior in their phase changes that may, at irst, seem to violate the laws of thermodynamics. While it is possible to identify solid and liquid forms for many, probably most such particles, they do not obey the longestablished Gibbs phase rule, which relates the number of degrees of freedom, f, the number of chemically distinct components c, and the number of phases present in thermodynamic equilibrium, p, through what is probably the simplest equation in thermodynamics, even perhaps in science, simply because it involves only addition and subtraction: f = c − p + 2. (he only truly subtle term in this relation is the “2.”) he simulations of such clusters of atoms or molecules show clearly that there can be a solid form and a liquid form in a dynamic equilibrium within a range of temperatures at a ixed pressure. he phase rule would require that the solid and liquid could be in thermodynamic equilibrium at only one temperature, at a i xed pressure. hat is, according to the phase rule, f is 1 if c is 1 and p is 2. In fact, simulations also show that it is possible for more than two phases to coexist in dynamic equilibrium within a range of temperatures and pressures. his chapter explores how this can be, what kinds of phases can be seen in simulations, what kinds of experimental evidence there is for such a coexistence, how one can estimate the range of temperature within which such coexistence is observable (as a function of cluster size), what special properties molecular clusters may exhibit, and what some of the open, unanswered issues are. Let us begin here with the most basic issue, of how a inite range of coexistence for such small systems is compatible with the Gibbs phase rule. We can begin by writing an equilibrium constant for a solid in equilibrium with a liquid:

K eq =

[solid] − ( F − F ) / kT = e liq sol [liquid]

(20.1)

but the free energies F liq and Fsol can be written in terms of the corresponding chemical potentials μliq and μsol and the number N of particles in the system, so F liq − Fsol = N (μ liq − μ sol ) = N Δμ.

(20.2)

Now suppose we measure the chemical potential diference in units of kT, i.e., in the same energy units we use for temperature. If the chemical potentials and free energies of the two forms are equal, then of course the equilibrium constant is 1 and the two forms are present in equilibrium, strictly in equal amounts. Suppose now that the system is just a tiny bit away from equilibrium, say only 10−10 in units of kT, which is surely a very tiny deviation. his could be positive or negative. But suppose that the system is macroscopic and consists of 1020 particles, i.e., N = 1020. hen NΔμ = ±1020 ⋅ 10−10 = ±1010, and the equilibrium constant is the exponential of this number. Consequently the equilibrium constant is so large or so small that it is totally impossible for one to see the thermodynamically unfavored form, even this close to equilibrium. his is precisely what sets the constraint that leads to the Gibbs phase rule. But now let us consider a system made of only 100 particles, so N = 100. If Δμ were 1% of kT, i.e., if Δμ = ±10 −2 , then the equilibrium constant would be e±1 and both solid and liquid could be present in easily observable amounts. In short, the Gibbs phase rule is not a universal rule, but a rule for moderately or very large systems, but not for very small systems. 20-1

20-2

Nozzle temperature (K) 200

300

400

500

600

700

0.6 N = 430 TM = 380 K

0.5

Δuls = (40 ± 10) meV

U(T)/N (eV)

0.4 0.3

N = 1022 T = 505 K

0.2

Δuls = 73 meV

0.1 0 200

300

(a)

400 500 Temperature (K)

600

700

2.0 Cv/N (meV/K)

N = 430

1.0 3 Kb 0 300

350 400 450 Nozzle temperature (K)

(b)

500

FIGURE 20.1 Temperature dependence of phase behavior of a 430atom cluster of tin atoms; (a) internal energy, measured calorimetrically, as a function of temperature for clusters (upper curve) and for bulk solid (lower set of open circles); (b) heat capacity of the 430-atom cluster as a function of temperature, the temperature derivative of the curve in (a). (Taken from Bachels, T. et al., Phys. Rev. Lett., 85, 1250, 2000. With permission.) Tmelt

Tevap

Eevap 15 Na139 Energy (eV)

In the next section, we review the evidence for such coexistence of two or more phases of atomic clusters, and how this coexistence can be represented in ways related to traditional phase diagrams. Section 20.3 describes the phase behavior of some molecular clusters and connects the phase behavior of molecular clusters to that of bulk systems in terms of the order of the transition. hen we show how one can estimate the range of conditions under which coexisting phases can be seen experimentally. Finally, we close with a brief description of some of the open, unanswered questions regarding the phase behavior of small systems. hat solid and liquid phases of clusters could occur at all was anticipated at least tacitly by Sir William homson (later Lord Kelvin) when he showed in 1871 that a small particle with positive curvature must have a higher vapor pressure than a bulk, lat surface of the same material, implying that the small system is more volatile than the bulk (homson, 1871). In 1909, Pawlow treated the question of the melting points of small particles explicitly to show that they should melt at lower temperatures than the bulk material (Pawlow, 1909a,b). Hill, in his irst book on the thermodynamics of small systems, showed schematically that one can expect small systems to exhibit a gradual passage between one phase and another, and that the process becomes sharper as the size of the system increases (Hill, 1963). Experiments, particularly based on electron diffraction, demonstrated the existence of solid forms of clusters over ranges of temperature and pressure irst in the late 1970s (Farges et al., 1975, 1977), and continued vigorously in the next decade and ater (Farges et al., 1983, 1986, 1987a,b; Valente and Bartell, 1983, 1984a,b; Bartell, 1986). Similarly, liquid forms also revealed themselves in electron dif raction experiments (Bartell et al., 1988), as did transitions between solid and liquid phases (Bartell et al., 1989; Bartell and Dibble, 1990, 1991a,b; Bartell and Chen, 1992). Stace inferred from the ion fragments he produced by electron impact from argon clusters doped with a molecule of dimethyl ether that when the clusters were produced in a lowpressure jet, they were liquid and, from a high-pressure jet, they were solid (Stace, 1983). he range of coexistence appeared in calorimetric experiments with roughly 500-atom clusters of tin atoms (Bachels et al., 2000); Figure 20.1, from that work, compares (in Figure 20.1a) the internal energy of the 430-atom cluster with that of bulk tin, as functions of temperature, he second part of the igure shows the heat capacity of the cluster, the derivative of the curve of internal energy vs. temperature. A new approach to the experimental investigation of phase changes in clusters came from the studies of ion fragments by the Freiburg group (Schmidt et al., 1997, 1998, 2001a). In this work, singly charged clusters of a single selected size equilibrated thermally at various temperatures and then were photoionized. he fragmentation pattern revealed the internal energy content. he experiments were the i rst to show not only the melting transition but also the vaporization. Figure 20.2 is a caloric curve taken from the third of the cited works. Alkali halide clusters, diferent as they are from metal or molecular clusters, also show bands of coexisting phases (Breaux et al., 2004).

Handbook of Nanophysics: Principles and Methods

+

10

5

0

0

100

200

300 400 Temperature (K)

500

FIGURE 20.2 he experimental caloric curve for the cluster Na139+, showing both the melting region and the vaporization. (Taken from Schmidt, M. et al., Phys. Rev. Lett., 87, 203402, 2001b. With permission.)

20-3

Phase Changes of Nanosystems

20.2 Evidence from Simulation of Bands of Coexistence of Phases of Small Nanoparticles he phase behavior of clusters became apparent with the advent of molecular dynamics and Monte Carlo simulation of rare gas clusters. McGinty (1973), then Etters and Kaelberer (Etters and Kaelberer, 1975, 1977; Etters et al., 1977; Kaelberer and Etters, 1977), using the Monte Carlo method, and Briant and Burton (1973, 1975), with molecular dynamics, carried out their simulation studies. McGinty found liquid-like behavior at high temperatures and solid-like behavior at low temperatures, but was

unable to distinguish phase changes. In contrast, the molecular dynamics results of Briant and Burton indicated that solid and liquid forms of small argon clusters could be in dynamic equilibrium, rather like chemical isomers, passing back and forth between phases on time scales of many vibrational periods. Figure 20.3a shows a group of caloric curves produced by Briant and Burton; more recent results, examples of which are in Figure 20.3b and c, sometimes difer from those early presentations, but the qualitative ideas certainly have been sustained. he simulations from the 1970s led to an investigation to establish conditions under which such coexistence behavior could occur, in terms of the densities of states of the solid and liquid

60

55 Solid Partially liquid Liquid

100

33

13

2 7

40

6

T (K)

4 5

3

20

0 –10.0

–8.0

–6.0

–4.0

–2.0

0

Energy (10–14 erg/atom)

(a)

0.36

50.0

0.34 40.0

30.0

0.30 kT/c

T (K)

0.32

20.0

0.28 0.26

10.0 0.24 0.0 –6.0 (b)

–5.0

–4.0

–3.0

ETOT (10–14 erg/atom)

0.22

–2.0 (c)

45

50

55

60

65

70

75

80

Total energy/

FIGURE 20.3 Caloric curves, energy vs. efective temperature; (a) from the simulations of Briant and Burton (1975) for clusters of argon atoms ranging from 2 to 100 atoms. Open circles indicate liquid, i lled circles indicate solid, and triangles indicate an intermediate form sometimes called “liquid surface.” (From Briant, C.L. and Burton, J.J., J. Chem. Phys., 63, 2045, 1975. With permission.) (b) Later simulations of the Ar13 cluster, showing no negative slope; here triangles are based on Monte Carlo simulations at constant temperature and circles are based on molecular dynamics simulations at constant energy. (From Davis, H.L. et al., J. Chem. Phys., 86, 6456, 1987. With permission.) (c) A later caloric curve for Ar55, derived by two separate methods, clearly showing a region of negative slope. (From Doye, J.P.K. and Wales, D.J., J. Chem. Phys., 102, 9659, 1995. With permission.)

20-4

Ekin (10–15 erg/atom)

10.0

5.0

0.0

0

(a)

25,000 Time steps

50,000

(τ – 10–14 s)

Ekin (10–15 erg/atom)

10.0

5.0

0.0

0

25,000

50,000

Time steps (τ – 10–14 s)

(b) 10.0 Ekin (10–15 erg/atom)

forms (Natanson et al., 1983; Berry et al., 1984a,b). his, in turn, stimulated new molecular dynamics simulations of clusters of various sizes, some at constant energy (Amar and Berry, 1986; Jellinek et al., 1986; Beck et al., 1987), and some at constant temperature (Beck and Berry, 1988; Beck et al., 1988; Berry et al., 1988; Davis et al., 1988). From these simulations, a coherent picture emerged that explained the nature of the coexistence, and many of the conditions under which it can occur. It was not yet apparent at that time what conditions would make the coexistence observable, but it did seem likely that it should be. Here, we now discuss the simulations and their results. hen, in the next section, we examine the theoretical interpretation of the phenomenon. We concentrate more on molecular dynamics simulations in this discussion than on Monte Carlo, simply because the former come as close as we know how to representing real time-dependent behavior. he simplest kind of molecular dynamics is based on maintaining constant energy. A clear example that reveals the phase behavior of a small cluster is that shown in Figure 20.4 (Jellinek et al., 1986). his gives the time dependence of the mean kinetic energy per atom for three successively higher total energies, for a cluster of 13 atoms bound by a Lennard-Jones potential, simulating an argon cluster. he total energies, per atom, for the three cases are (a) −4.20 × 10−14 erg/atom, (b) −4.16 × 10−14 erg/atom, and (c) −3.99 × 10−14 erg/atom. At the energy of (a), the system is solid-like most of the time, as indicated by the relatively high kinetic energy with small luctuations. At still lower energies, the system remains in a state of small luctuations at all times, i.e., is a cold solid. At the energy of (c), the highest of the three, the kinetic energy luctuates widely, corresponding to the motion of the atoms when the cluster is liquid. Between, in (b), the cluster passes back and forth rather randomly between the high-kinetic-energy solid and the low-kinetic-energy liquid. hese, of course, correspond to passage between regions of low potential energy (solid) and high potential energy (liquid). We shall return to this point and to the implication of the shapes of the caloric curves of Figure 20.3 in the discussion on heat capacities of small systems. he essential point of what appears in Figure 20.4 as a bimodal distribution of kinetic energies is that we can distinguish (in this case) two distinct kinds of behavior. he system dwells long enough in each form that we can evaluate properties, essentially equivalent to internally equilibrated properties for each form, and, by determining the relative fractions of the total time spent in each form, we can determine a long-time average of the distribution between the two forms. he simulations can be carried out under isothermal conditions as well as under constant-energy conditions, and in many ways, the results are very similar. For example, for Ar13, see Davis et al. (1987). he caloric curves may difer, but the bimodal (or multimodal) distributions appear and time-average distributions can reveal the same kind of behavior: a unimodal distribution corresponding to a solid phase at low temperature or low energy, a single liquid phase at suiciently high temperatures, and a bimodal distribution between these two temperatures. Figure 20.5 shows a succession

Handbook of Nanophysics: Principles and Methods

5.0

0.0 (c)

0

25,000

50,000

Time steps (τ – 10–14 s)

FIGURE 20.4 Time dependences of the short-time average kinetic energy of a 13-atom cluster of atoms bound by a Lennard-Jones potential, simulating a cluster of argon atoms. he time steps are each 10−14 s. he short-time averaging to construct each point was taken for 500 such time steps. he total energies, per atom, for the three cases are (a) −4.20 × 10−14 erg/atom, (b) −4.16 × 10−14 erg/atom, and (c) −3.99 × 10−14 erg/atom; (a), the system is mostly solid-like. At the highest energy, (c), the cluster is liquid. In (b), the cluster passes back and forth rather randomly between the high-kinetic energy solid and the low-kinetic energy liquid and one sees a dynamic equilibrium of the two phase-like forms. (From Jellinek, J. et al., J. Chem. Phys., 84, 783, 1986. With permission.)

of distributions of mean potential energies—short-term means, taken over just 500 time steps—for an Ar13 cluster at successively higher temperatures (Davis et al., 1987). he passage from only solid, through a range of temperatures (all at the same zero pressure) where the solid and liquid coexist in dynamic equilibrium, to a temperature high enough that only the liquid is stable. his is a very general phenomenon, exhibited by clusters of all sorts. One aspect of phase coexistence that goes beyond the simple two-phase dynamic equilibrium appears with somewhat larger clusters. Nauchitel and Pertsin showed from simulations that the

20-5

Phase Changes of Nanosystems 1.00

1.00 20 K

0.80 0.60

0.60

0.40

0.40

0.20

0.20

0.00 –8.0

–7.0

–6.0 –5.0 PE

–4.0

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1.00

0.00 –8.0

–6.0

–5.0 PE

0.80

33 K

0.60

0.60

0.40

0.40

0.20

0.20

–7.0

–6.0 –5.0 PE

–4.0

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1.00

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0.00 –8.0

35 K

–7.0

–6.0

–5.0 PE

–4.0

–3.0

1.00 37 K

0.80

0.60

0.40

0.40

0.20

0.20 –7.0

–6.0

–5.0

–4.0

43 K

0.80

0.60

0.00 –8.0

–7.0

1.00

0.80

0.00 –8.0

26 K

0.80

–3.0

PE

0.00 –8.0

–7.0

–6.0

–5.0 PE

–4.0

–3.0

FIGURE 20.5 Distributions of mean potential energy for isothermal Ar13 clusters at successively higher temperatures, showing passage from a unimodal distribution corresponding to a solid phase, through a region of bimodal distributions, to a temperature high enough that only the liquid phase is present. (From Davis, H.L. et al., J. Chem. Phys., 86, 6456, 1987. With permission.)

cluster of 55 atoms bound by Lennard-Jones forces, modeling the Ar55 cluster, exhibits what they called “surface melting.” here was no question that there is a range of temperature in which the 42 atoms on the surface of this cluster are more mobile than at low temperatures at which the system has a completed icosahedral structure (Nauchitel and Pertsin, 1980). Later investigations showed that this phenomenon occurs with clusters of other sizes and kinds including metal clusters, in the range from the mid-40s through at least the 150-range (Cheng and Berry, 1992). However, this work showed, through the use of animations, that “surface melting” was perhaps a bit of a misnomer, in the sense that the phenomenon involves promotion of a few particles from the outermost cluster layer to the outer surface, on which those few particles, roughly 1 in about 30, can move about fairly freely, while the particles remaining in the outer shell undergo large-

amplitude, anharmonic motions but nonetheless motion about a well-deined polyhedral structure. he amplitudes of the anharmonic motions are large enough that instantaneous “snapshots” of the cluster suggest that the structure of the outer shell is amorphous, but the eye recognizes from animations that those atoms actually do oscillate around a well-deined polyhedral structure. his is illustrated in Figure 20.6, which shows the mean square displacement of the atoms, shell by shell, of a simulated Ar130 cluster. he lower curves show that the inner shells are i xed at the temperature of 35.2 K, while the uppermost curve shows the large-amplitude motion of the outer-shell atoms. Still further investigations (Kunz and Berry, 1993, 1994) of “surface melting” showed clearly that there can be a range of temperatures in which three phase-like forms can coexist in dynamic equilibrium. Figure 20.7 shows the short-time-averaged internal

20-6

Handbook of Nanophysics: Principles and Methods Ar130 T = 35.2 K 15

MSD (bohr2)

10

5

0

0

200

600 400 Time step

800

1000

FIGURE 20.6 An example of “surface melting” as illustrated by the large and growing mean square displacement of the outermost shell (upper curve, in contrast to the essentially i xed positions of the innershell atoms. he cluster is composed of 130 atoms bound by LennardJones forces, simulating Ar130 at a temperature of 35.2 K. (From Cheng, H.-P. and Berry, R.S., Phys. Rev. A, 45, 7969, 1992. With permission.) T = 35 K

III –1.50 × 10–3

1800

(a.u./atom)

–1.40 × 10–3

Etot

II

–1.60 × 10–3

I 0

500

1000

Time steps

FIGURE 20.7 Results of a constant-temperature simulation of Ar55 in the region in which solid (I), liquid (III) and surface-melted (II) phaselike forms are in dynamic equilibrium. (From Kunz, R.E. and Berry, R.S., Phys. Rev. E, 49, 1895, 1994. With permission.)

energy as a function of time for an Ar55 cluster (Lennard-Jones potential) in a simulation at the constant temperature of 35 K (Kunz and Berry, 1994). he high-energy regions (III) are of course liquid, the lowest-energy regions (I) are solid, and the intermediate region, II, is that of the surface-melted form. We shall return to how this phenomenon can be represented in a kind of phase diagram. Other kinds of atomic clusters also exhibit the same sort of melting behavior. Both true melting and surface melting have been seen experimentally (Kofman et al., 1989, 1990; Vlachos et al., 1992) and theoretically (Garzón and Jellinek,

1992; Bonacic-Koutecky et al., 1997; Rytkönen et al., 1998). Semiconductor clusters also show similar behavior (Dinda et al., 1994). here is, however, a remarkable situation in at least two kinds of systems that was completely unexpected. In 1871, homson (later Lord Kelvin) established that small particles should melt at temperatures lower than their bulk counterparts (homson, 1871). h is has been demonstrated again and again. he results with large clusters of tin, for example (Bachels et al., 2000), show that clusters of order of 500 atoms melt at temperatures 125 K lower than does bulk tin. However, experiments showed conclusively that smaller clusters of gallium melt at temperatures far higher than bulk gallium (Shvartsburg and Jarrold, 2000; Breaux et al., 2003). Small clusters of tin show the same sort of elevated melting points (Shvartsburg and Jarrold, 1999). he interpretations of this have been presented in two formulations. Both are based on calculations using density functional theory. hey attribute the high melting to covalent bonding, in contrast to the metallic bonding of the bulk (Joshi, 2002; Joshi et al. 2003, 2006; Chacko et al., 2004).

20.3 Thermodynamic Interpretation of Bands of Coexisting Phases he concept of bands of temperature and pressure in which two or more phases could coexist in thermodynamic equilibrium seems at irst sight to contradict one of the fundamental concepts of this most general of sciences. he discussion at the outset here clariies how there is no real contradiction between the Gibbs phase rule, which is valid for macroscopic systems, and the phase behavior of small systems, which are composed of tens, hundreds or perhaps even thousands of particles. hat interpretation lies entirely in the behavior of exponentials, and the diference between large and small exponents. Here, we can probe a little deeper into the thermodynamic basis of the simultaneous stability of two or more phases. Stability of a system corresponds to its being at or in the vicinity of a minimum of a characteristic property. For a mechanical system, this typically means being at a minimum energy. For a system at a i xed temperature, it is a free energy that is a minimum when the system is stable and at rest. However, we distinguish between a local minimum and the most stable of all attainable states, the global minimum. A system may well remain for a very long time in a minimum that is not the lowest. People live in towns in the mountains that are far above the gravitational minimum, for example. Likewise, chemical species with more than one isomeric form can remain for arbitrarily long times in a stable structure that is not the form of lowest energy or free energy. h is is precisely the situation when two or more phase-like forms of a nanoparticle are present either in unequal concentrations in a large ensemble or a single nanoparticle passes back and forth between forms, spending unequal amounts of time in each phase-like form. A way to envision this kind of equilibrium lies in the concept of a kind of order parameter γ, which we can call a “nonrigidity

20-7

Phase Changes of Nanosystems 106

Cumulative density of states

105

T6

Rigid

104

Tm = T5

103

T4

Nonrigid 102

T3

10

Tf = T2 1

0

10

20

30 40 Energy (K)

50

60

FIGURE 20.8 Schematic representation of the densities of states of a typical system of 6 or 7 inert gas atoms near their rigid and nonrigid limits, corresponding to solid and liquid forms of the same system. (From Berry, R.S. et al., Phys. Rev. A, 30, 919, 1984b. With permission.)

parameter.” We can think of an extreme in which γ = 0 in the limit that the particles cannot move at all, and an opposite extreme where γ = 1 and the particles are completely free as a very dilute gas. A real solid thus corresponds to a low but nonzero value of γ because the particles do exhibit some vibrational motion. Likewise, a real liquid corresponds to a much higher value of γ but to something much below 1 because the motion of the particles in a liquid is far from completely free. We can recognize the way phase changes occur i rst by comparing the density of states of a system near its rigid limit with the corresponding density of states for the same system but near its nonrigid limit, and especially, we want to see how these two depend on energy. Figure 20.8 shows how the cumulative density of states of the solid dominates at low energies, but is overtaken by the nonrigid, liquid states at high energies. he result is that at high energies, the entropic contribution to the free energy, whether Helmholz or Gibbs, of the liquid makes it the more thermodynamically favored form. he free energy can, at least in some metaphoric fashion, be treated as a continuous function of an order parameter characterizing the degree of rigidity or nonrigidity. One can envision curves of free energy as functions of temperature; minima in such curves correspond to stable states. At low temperatures, we expect to see only one minimum, in the rigid region, corresponding to a solid. At suiciently high temperatures, again the curve should show only a single minimum, that of the liquid. For small systems, the nanoscale systems we are considering here, we i nd a range of temperatures (for a given pressure or volume) in which the curves exhibit two signiicant minima. h is behavior is just what the curves of Figure 20.9 show. hese curves represent schematically the free energies of a system small enough to show a band of coexistence for just two phases. Were the system very large, macroscopic, then the temperature

T1 0

γ

1

FIGURE 20.9 Schematic curves of free energies at diferent temperatures, as functions of an order parameter characterizing the degree of rigidity. he let limit, γ = 0, corresponds to a completely rigid solid; the right limit, γ = 1, to an extremely nonrigid system. he minima correspond to locally stable states, solid for low γ and liquid for the higher value. he temperatures increase from the lowest, T1, to the highest, T6. his igure describes a system with only two coexisting states. hey can coexist in the regions of T3 and T4. (From Berry, R.S., heory of Atomic and Molecular Clusters, Jellinek, J. (ed.), Springer-Verlag, Berlin, Germany, 1999, 7.)

range of coexisting minima would be so narrow that it would be unobservable; the two minima would appear in the curve at only the sharp temperature corresponding to the classical melting point. Temperatures T2 and T5 of Figure 20.9 carry other designations, Tf and Tm, respectively. hese two are the freezing limit and melting limit temperatures. Below Tf, there is no local minimum in the nonrigid region, meaning that there is no locally stable liquid state at temperatures below this. Likewise, the local minimum in the rigid region disappears at Tm, so there is no stability above this temperature for a solid form. he two phases thus can coexist only within sharply bounded temperature limits. Of course, Tf and Tm presumably depend on pressure, but that dependence has not been studied. Furthermore, the question is still open as to whether or how precisely the freezing and melting limits could be determined experimentally. At issue is how large the inluence of luctuations would be. In situations such as that portrayed in Figure 20.7, where more than two phases of a cluster system coexist, it may be possible to use a single order parameter, as the nonrigidity parameter γ is being used here, to portray the multiphase coexistence. Figure 20.10 is a schematic representation of that situation. In addition to the local minima to the let or ordered side and the right or nonrigid side, at temperatures T3 and T4, we see a local minimum between the other two, at T5, this has become just an inlection point. he extent to which such a portrayal is useful will depend

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Handbook of Nanophysics: Principles and Methods

a bit of an extension to the traditional phase diagram to give us just that description (Berry, 1994). We simply need to introduce one more variable. he most convenient for one kind of extended phase diagram is a variable that ranges between −1 and 1, namely a distribution we call D, which is a simple function of the equilibrium constant Keq of Equation 20.1:

T6 Tm = T 5

T4

D=

K eq − 1 K eq + 1

(20.3)

T3

Tf = T2

T1 0

γ

1

FIGURE 20.10 Schematic curves of free energies at successively higher temperatures, for a case in which three locally stable, phase-like forms may coexist. In this hypothetical example, in contrast to the surfacemelting cases of clusters of 40–60 argon atoms, the curves suggest that the phase with a midrange value of γ does not appear at a temperature lower than the temperature where the liquid appears. However, the solid does disappear in this illustration at a temperature lower than that for the intermediate phase. (From Berry, R.S. and Levine, R.D., Progress in Experimental and heoretical Studies of Clusters, Kondow, T. and Mafuné, F. (Eds.), World Scientiic, Singapore, 2003, 22. With permission.)

on whether a single order parameter is suicient to characterize the diferent phases. It may be that one will suice in many situations, but if one of the phases difers from the others in some characteristic that is not clearly related to the irst-chosen parameter, then a second may be required. For example, we can imagine a third phase in which a system becomes paramagnetic, while the other phases are diamagnetic. In such a case, we may well want to introduce a second order parameter.

20.4 Phase Diagrams for Clusters A general and powerful tool for understanding phase coexistence of bulk materials has long been the phase diagram. In a traditional phase diagram for a single, pure substance, one typically displays the boundary curves separating regions of stability of individual phases, as functions of the relevant variables, most oten pressure p and temperature T. he phase rule determines that sharp curves are the boundaries between regions of stability and only on those curves can phases coexist. he liquid–vapor boundary curve terminates at the critical point; the solid–liquid, solid–vapor and liquid–vapor curves intersect at the triple point. But we have seen that the phase rule is inadequate for describing small systems, and that their coexisting phases over bands of temperature and pressure would make the traditional phase diagram inadequate to portray the behavior of such systems. We can, however, make

which is −1 if the system is all solid and +1 if the system is all liquid. Hence the extended phase diagram simply adds an axis for D to augment those of p and T, and extend the diagram into a third dimension. For a large system, the transition between D = −1 and D = +1 is too sharp and sudden to reveal any region of intermediate values. he curve of coexistence simply jumps from the plane of D = −1 to that of D = +1 where the normal, twodimensional phase boundary is. his is the situation in Figure 20.11a. However if the system is small, then there is a region in which D takes on intermediate values, a speciic value for each pressure and temperature. h is behavior is what the extended phase diagram of Figure 20.11b shows. Moreover the shaded regions in the back plane indicate the temperatures and pressures of the freezing and melting limits, Tf and Tm. It is sometimes useful to use a diferent kind of phase diagram for clusters and nanoscale particles, especially when one is dealing with three phases in equilibrium. h is second kind of diagram is somewhat analogous to the pressure–volume curves one draws for a van der Waals system in pressure–volume space. In that situation, one has a curve of stationary points; where the curve slopes downward, the points correspond to locally stable states; where the curve slopes upward, the points correspond to unstable states, and we connect those points to the let and right branches of the downward sloping regions , corresponding to stable phases. In Figure 20.12, we have a schematic curve of the stationary points for a system that may be solid, liquid, or surface-melted (Berry, 1997). he horizontal axes are the scales of defect concentrations ρsurface and ρcore, for the surface and the core, respectively. he vertical axis is T−1, the inverse of the temperature. he heavy curve is the locus of stationary points for the system. Where the curve slopes downward, starting from the top of the diagram, the coldest temperature, the points correspond to stable states; where the curve slopes upward, the corresponding states are unstable. We see an initial downward slope where both defect densities are very small; this corresponds of course to the solid. he next downward sloping region is in a region where ρsurface is fairly large but ρcore is still very low; this is obviously the region of stability of the surface-melted form. he next and last downward-sloping region is one where both ρsurface and ρcore are large, the region of stability for the liquid. he temperature ranges where two or three downward slopes occur are the regions of stability for coexisting phases. he limits of these zones are shown by dashed lines. Between the top and second dashed lines, the solid and surface-melted forms can coexist;

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Phase Changes of Nanosystems

P

Pe (T)

P Solid

Pe (T) Solid

Liquid

Liquid

Tf

Tf Tm

Tm

D = –1

D = –1

Coexistence surface T D=1

T D=1 Deq

Deq (a)

(b)

FIGURE 20.11 Extended phase diagrams that use the distribution variable D of Equation 20.3 for a third dimension; (a) a schematic solid–liquid phase diagram for a macroscopic system, in which the passage from the plane of D = −1 to D = +1 is so sharp that the third dimension is unnecessary; (b) a schematic solid–liquid phase diagram for a small cluster, in which there is a temperature–pressure band in which the equilibrium composition contains both phases. he shaded regions in the rear plane of D = −1 indicate the limits set by Tf and Tm, the freezing and melting limits. (From Berry, R.S., heory of Atomic and Molecular Clusters, Jellinek, J. (ed.), Springer-Verlag, Berlin, Germany, 1999, 14.)

between the second and third dashed lines, all three phases can coexist. hen, between the third and fourth dashed lines, just the surface-melted and liquid phases are stable together. Above the top dashed line, the only stable form is the solid; below the fourth, only the liquid is stable.

ρs 0.1

0.05

0 4 β 2

0

0.25

0.5

0.75

1

0

ρc

FIGURE 20.12 A second kind of extended phase diagram to illustrate coexistence of three phases. he vertical axis is T−1, the inverse of the absolute temperature. he two horizontal axes, ρsurface and ρcore, represent the densities of defects in the surface layer and in the core, respectively. he heavy curve in the three-dimensional space is the locus of stationary points. If we follow it from the top, the lowest temperature, the points on the curve are points of stability whenever the curve is dropping, and are stationary points of instability, analogous to the upward-sloping portion of curves for a van der Waals system, in a pressure-volume phase diagram. he light solid curves are projections of the heavy curve on the let side and front planes, to exhibit explicity where the heavy curve slopes up and where it slopes down. here are three regions of downward slope: that near the region where both defect densities are nearly zero, which of course corresponds to the region of stability of the solid; then a region in which ρsurface is nonzero but the core is essentially defect-free, and corresponds to a stable surfacemelted form; and inally, to the right, is a region corresponding to ρcore, the liquid region. Between the two uppermost dashed lines, the solid and surface-melted forms can coexist; between the second and third dashed lines, the three phases can coexist; then, between the third and fourth dashed lines, the surface-melted and liquid phases can coexist. Above the top dashed line and below the lowest, only a single phase is stable. (From Berry, R.S., heory of Atomic and Molecular Clusters, Jellinek, J. (ed.), Springer-Verlag, Berlin, Germany, 1999, 19.)

20.5 Observability of Coexisting Phases One concern arises immediately when one realizes the physical possibility of two or more phases coexisting over a band of temperatures at a given pressure. his is the question of how wide that temperature band is, and how easily it would be to observe such coexistence. Another way to phrase the question is to ask how large a system would show such coexistence over an observable temperature range. To address this question, we need to determine the temperature range within which the equilibrium constant Keq is relatively near 1, or the distribution parameter γ is close to zero (Berry and Smirnov, 2009). Let us arbitrarily decide what we want “relatively close” to mean, in terms of there being an observable amount of the unfavored phase present. Speciically, let us set out to ind the range of temperature such that 0.1 ≤ K eq ≡ exp(−ΔF ) ≤ 10 with ΔF expressed in units of temperature. he free energy change associated with the phase change is, of course, ΔF =

ΔE − ΔS T

(20.4)

which is zero at the classical melting point. Now let us deine the temperature range of observability of the phases as ∂F =

ΔE∂T T2

(20.5)

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Handbook of Nanophysics: Principles and Methods

and, because the range of observability of the coexistence is narrow, we can safely suppose that both ΔE and ΔS are constant within that range. But our assumption that the range of Keq lies between 0.1 and 10 tells us that the free energy change ΔF lies between −2.3 and +2.3; that is, δF ≈ 4.6 or, for convenience, 5. Hence we can write, as a useful approximation for the range of observable coexistence, ∂T ≈

5T ΔS

or

∂T 5 ≈ Tm ΔS

(20.6)

if we take as Tm the temperature at which ΔF = 0 reduces the problem to estimating the entropy change in the change of phase. he estimation of ΔS breaks naturally into two parts: a conigurational part and a vibrational part. For metallic clusters, it may sometimes be appropriate to include an electronic contribution, but we assume here that the electronic densities of states of the solid and liquid forms (and other phases, if they are present) are approximately equal, so there is no signiicant contribution to the entropy change from the electrons. It is also useful to separate two cases, one in which all the phase changes occur in the outer layer of the cluster, and the other in which the entire cluster changes phase. In the simpler case of the outer layer “melting,” we know that the process involves promotion of one or more particles from that layer to become “loaters” on the surface of the system, while the vacancy let in the outer shell provides an increased volume in which the particles in that shell can move. Suppose that the radius of the initial, unexcited cluster is R0, the radius of the atoms is r, and their mean nearest-neighbor distance in the unexcited system is d. he initial volume available to each particle is v0 = (4π/3)(d/2)3. Simulations indicate that roughly 1/15 of the ns surface atoms is promoted to become a loater when “surface melting” occurs. he promoted particles move in a volume of approximately (4π/3)[(R0 + 2r)3 − R03]. Hence the total increase in available volume for the cluster’s particles following surface melting, Vsm, is ΔVsm =

3 ns 4π ⎧ ⎡ ⎞ 3⎫ 3 ⎤ ⎛ ns ⎨ R 0 + 2r − R 0 ⎥ − ⎜ − 1⎟ r ⎬ ⎦ ⎝ 15 ⎠ ⎭ 15 3 ⎩ ⎣⎢

(

)

(20.7)

his makes the conigurational change in the entropy ⎛ ΔV ⎞ ΔSsm = ln ⎜ sm ⎟ ⎝ v0 ⎠

(20.8)

For surface-melting of clusters with partly i lled outer shells, we can treat this entropy change slightly diferently. If the outer shell has less than two-thirds of its sites i lled, we can simply assume that the volume available to each of the surface-shell atoms is that empty space. For systems with two-thirds or more of the surface sites i lled, we can assume that the volume made available on melting is that due to promotion plus the empty volume in the partly i lled surface.

here is one other contribution to the entropy still to be estimated. h is is the change in the vibrational contribution. h is can be done with a rather crude approximation, speciically that the vibrational entropy per atom is a linear function of temperature. From simulations, the temperature dependence of the vibrational entropy, per atom, based on a closed-icosahedral Ar13 cluster, is simply Δs13 = 2.2T + 0.13, in the same dimensionless units based on the pair dissociation energy D. For open-shell clusters with less than two-thirds of the available sites occupied in the outer shell, the treatment above is adequate for that outer shell and one can use the vibrational entropy contribution, per atom, as derived for the Ar13 cluster for the next-outermost shell. In this context, we can also estimate the energy associated with promoting an atom to be a floater. This is essentially the change in the number of nearest neighbors times the energy D of each pairwise interaction at equilibrium. For an icosahedral cluster, the number of contacts, due to promotion to become a floater, changes from 6 to 3, so, in units of D, this change is ΔEsm =

3ns 15

(20.9)

Returning now to our problem of inding the observable size range on the basis of Equation 20.6, we see that high-melting clusters must show wider coexistence ranges than low-melting clusters. As an example, if we make the rough estimate that the entropy change per atom in the size range of 50–100 atoms is the amount one obtains for the 55-atom cluster, namely 45/55 or 0.82 per atom, then the range of observable coexistence based on at least 10% of the minority phase is only 0.3 K, from 47.07 to 47.37 K. However, if the melting point were in the range of 270 K, as it is for the high-melting Na139 to Na147 (Schmidt et al., 1998), the predicted coexistence range would be close to 2 K. In fact, the results from this very crude estimate seem narrower (and hence more pessimistic about the observability) for these clusters than was seen in the experiments (Schmidt et al., 1998). However, the estimate used here makes no allowance for the difference in behavior of argon clusters and metal clusters, clearly a signiicant factor here. In practice, one can generally make more irmly based estimates of that entropy change.

20.6 Phase Changes of Molecular Clusters here are far fewer studies of molecular clusters, and particularly, the phase changes of molecular clusters than of their atomic counterparts. However, there have been enough experimental and theoretical investigations of these to show that they can reveal new insights and new phenomena that do not appear in the behavior of bulk systems. Here we shall focus on what we have learned from clusters of octahedral molecules such as SF6, in some ways the closest molecular parallels to atomic clusters.

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Phase Changes of Nanosystems

Because of their nonspherical geometries, molecules in clusters have rotational degrees of freedom. As a result, clusters of molecules, and macroscopic solids as well, can have varieties of solid phases that do not occur for structures built from simple atoms. his phenomenon reveals itself in clusters of octahedral molecules. Moreover, the transitions between these solid phases exhibit the characteristics we associate with transitions of irst and second order—but the characteristic order of a particular solid–solid transition in clusters of tens or hundreds of atoms may difer from the order of what we must consider the same transition in the bulk solid. Let us briely review the difference between irst- and second-order transitions. he most important diference between these for characterizing clusters is this: a irst-order transition has a latent heat, a discrete change of energy as the system passes from one form to the other. he phases can coexist because each corresponds to a minimum in the free energy, but, as we saw, in a bulk system, the phase with the higher free energy, the unfavored phase, is present only in unobservably small quantities unless the two phases have equal free energies. A second-order transition has no latent heat; the internal energy changes continuously with the change of phase, but the derivative, the slope of the energy as a function of temperature is discontinuous in a traditional second-order transition. Hence the heat capacity, ∂E/∂T (for whatever conditions are speciied) is efectively ininite at the point of a classical, bulk phase transition because the inverse of the heat capacity is zero there; the temperature does not change at all until the system has absorbed the full latent heat of the transition. A inite system, a cluster, has a smooth heat capacity that remains inite through its equivalent of a irst-order transition because there is a continuous change in the relative amounts of the coexisting phases as the temperature changes. Strictly, one might expect zeros in the inverse of the heat capacity of a cluster at the temperatures Tf and Tm of Figure 20.9, the temperatures at which one or the other second minimum appears. At these temperatures, there should be an efective latent heat, corresponding to an equilibrium fraction of the minority phase appearing or disappearing at the temperature at which the second, higher minimum can sustain a nonzero amount of material. hat this quantity does not increase or decrease from zero is a consequence of the zero-point energy level appearing when the higher-energy minimum is just deep enough to sustain that level. Strictly, in a quantum system, the equilibrium population of the minority phase should change from zero to a inite, nonzero value when that zero-point level appears. In contrast, the heat capacity of a classical cluster would behave continuously. However, there is no experimental evidence at this time for any such discontinuity, and it is not clear how diicult it would be to observe such a thing. As an illustrative system that has been studied both experimentally and theoretically, we examine collections of the octahedral molecule TeF6. he bulk material exhibits several phases (Bartell et al., 1987): liquid to 233 K, a body-centered cubic (bcc) structure from 233 to about 50 K and an orthorhombic structure below that. Clusters of roughly 100 molecules or more of

(a)

(b)

FIGURE 20.13 (a) Randomly oriented molecules of TeF6 in an 89-molecule cluster with body-centered cubic structure; (b) the same cluster in its monoclinic form, viewed along the axis with respect to which the clusters have orientational order; along either axis perpendicular to this, the molecules have no orientational order in this phase. (From Proykova, A. et al., J. Chem. Phys., 115, 8583, 2001. With permission.)

TeF6 or SF6 solidify i rst into a bcc structure (Bartell et al., 1987; Maillet et al., 1998) also show a monoclinic structure between 100 and 50 K that does not appear in the bulk systems (Bartell et al., 1989; Proykova et al., 1999, 2001). Simulations show that the cubic and monoclinic phases coexist in the same manner as the solid and liquid clusters of atomic systems. his is a clear indication that this transition has the properties we associate with it being irst order. Two local minima are present for a range of temperatures and the system can stay in equilibrium in each for some time, while the two forms are in dynamic equilibrium on a long time scale. Small clusters, e.g., of 59, 89, or 137 molecules, show the expected band of coexistence. In the cubic phase, the molecules are completely randomly oriented, and appear to be able to rotate relatively freely. In the monoclinic phase that results from cooling the bcc cluster, the molecules are ordered around only one axis. Figure 20.13 compares these two structures (Proykova et al., 2001). At a still lower temperature, 60 K in the case of the 89-molecule cluster of TeF6, the cluster undergoes another phase transition, this time to a completely orientationally ordered monoclinic structure. In this case, one sees no coexisting phases; as the system cools, it passes, with no latent heat, from the partially ordered to the completely ordered phase. h is is clearly the analogue of a classic second-order phase transition (Proykova et al., 2001). Figure 20.14 shows this behavior: a low-temperature solid–solid transition to the completely ordered state and a higher-temperature transition between the partially ordered solid and the randomly oriented solid. he TeF6 system is not unique; clusters of SF6 show, in simulations, the same behavior but the barriers between diferent forms are lower than for the tellurium compound, so the coexistence range is narrower and coexistence is more diicult to ind (Proykova et al., 2001). Nevertheless both systems show two solid–solid phase transitions, one irst-order and one secondorder. Similarly, clusters of diferent sizes exhibit this behavior. he 59-molecule cluster of TeF6, for example, shows a irst-order transition between bcc and monoclinic structures at about 76 K and a second-order transition between a partially oriented monoclinic structure and a fully oriented structure at approximately

20-12

Handbook of Nanophysics: Principles and Methods –14.0

250

Etot C

–15.0

Total energy (eV) . Etot

–17.0

150

–18.0 100

–19.0 –20.0

Heat capacity in Ks unit-C

200

–16.0

50 –21.0 –22.0

0

20

40

60 80 Temperature (K)

100

120

0

FIGURE 20.14 The caloric curve (dots) and heat capacity for (TeF6) 89. The jump in the curve at approximately 90 K corresponds to the monoclinic-to-cubic transition; the change in slope of the caloric curve at 60 K corresponds to the transition from the fully orientationally ordered monoclinic or orthorhombic state at lower temperatures to the monoclinic state with orientational order around only one axis. (From Proykova, A. et al., J. Chem. Phys., 115, 8583, 2001. With permission.)

30 K (Proykova et al., 2003). Clusters consisting of 28 or more TeF6 molecules exhibit this low-temperature continuous, secondorder-like transition. he irst-order character of the bcc-monoclinic transition arises from the change in structure and symmetry that the system undergoes there. In contrast, the second-order transition can be thought of as a simple passage between a lower symmetry to a higher symmetry in which the group of higher symmetry contains that of the lower symmetry as a subgroup. No fundamental structural change or movement of the molecules occurs there (Proykova et al., 2002). Electron difraction has been the most efective tool to study phase behavior in molecular clusters. For example, chlorinated hydrocarbons show liquid-to-solid transitions that this technique can recognize, and, likewise, one can see a solid-to-solid transition in SeF6 clusters of just the kind we have been considering (Dibble and Bartell, 1992a,b).

20.7 A Surprising Phenomenon: Negative Heat Capacities One interesting aspect of cluster behavior, but not something strictly a property of these small systems, is a striking kind of behavior that shows itself in some noncanonical conditions. Most frequently, this is observable in some systems constrained to be at constant energy, rather than at constant temperature. his was already evident in some of the caloric curves in Figure 20.3, such as that for Ar100: here is a region in which the caloric curve of T(E) derived from constant-energy simulations shows a negative slope. Even if some of those early curves (Briant and Burton, 1975) do not look quite like those computed more recently, there is no question now that some clusters, under constant-energy

conditions, show regions of negative heat capacity, precisely in the range of coexisting phases. he rationale for this, for such systems, was presented in the 1990s (Labastie and Whetten, 1990; Wales and Berry, 1994): Suppose a system can reside either in a deep, narrow potential minimum corresponding to a solid form, or in a broad, liquid-like region of high potential energy, much like a high rolling plain. he energy is constant, so the system’s kinetic energy is low in the liquid region and high in the solid region. It is simplest here to use the mean kinetic energy per degree of freedom as the measure of efective temperature, although one can come to the same conclusion using a deinition based on the variation of energy with respect to the microcanonical entropy, the analogue for a microcanonical system of the traditional canonical relation T = ∂E/∂S (Jellinek and Goldberg, 2000). he reasoning is thus: the density of states in the broad, high-energy liquid region increases signiicantly faster with energy than does the density of states in the solid region. Hence as the energy increases, more and more systems move into the liquid region, where the potential energy is high, so the kinetic energy is low, making the efective temperature low. his means that as the energy increases, the mean kinetic energy of the entire ensemble goes down, corresponding to a negative heat capacity (Berry, 2004). his has been seen in a variety of simulations, and in experiment as well (Schmidt et al., 2001a; Gobet et al., 2002). his is an example of a phenomenon that illustrates an otenoverlooked subtlety of thermodynamics, akin in that sense to the way the phase rule does not apply to small systems.

20.8 Summary We have surveyed phase changes of clusters, beginning with the evidence from simulations and experiment that these systems can show coexisting phases over ranges of temperature and

Phase Changes of Nanosystems

pressure, in apparent violation of the Gibbs phase rule. We have then seen how that rule is a consequence of the large numbers of particles in macroscopic samples, and how the behavior of small systems merges into that of their bulk counterparts as the number of their constituent particles increases. We have examined the thermodynamics of the phase equilibria of atomic clusters and showed how one can use thermodynamics to estimate the range within which coexisting phases could be present in observable amounts. Clusters of many kinds of elements exhibit coexistence. However, clusters of gallium and of tin, in certain size ranges, show anomalously high melting ranges. Extended phase diagrams can show how up to three phases can coexist for clusters. We then turned to molecular clusters and examined the way these can exhibit both irst-order and second-order transitions. Finally we saw how noncanonical ensembles of clusters may show negative heat capacities in speciic temperature ranges. he overall view we have tried to convey is that the phase behavior of clusters is not inconsistent at all with thermodynamics, but that these systems can oten show a rich variety of properties that may seem at irst to confound conventional ideas but, with a deeper understanding, are in fact entirely reasonable and interpretable.

References Amar, F. and Berry, R. S., 1986. he onset of nonrigid dynamics and the melting transition in Ar7. J. Chem. Phys. 85: 5943–5954. Bachels, T., Güntherodt, H.-J., and Schäfer, R., 2000. Melting of isolated tin nanoparticles. Phys. Rev. Lett. 85: 1250–1253. Bartell, L. S., 1986. Difraction studies of clusters generated in supersonic low. Chem. Rev. 86: 492–505. Bartell, L. S. and Chen, J., 1992. Structure and dynamics of molecular clusters. 2. Melting and freezing of CCl4 clusters. J. Phys. Chem. 96: 8801–8808. Bartell, L. S. and Dibble, T. S., 1990. Observation of the time evolution of phase changes in clusters. J. Am. Chem. Soc. 112: 890–891. Bartell, L. S. and Dibble, T. S., 1991a. Electron difraction studies of the kinetics of phase changes in molecular clusters. Freezing of CCl4 in supersonic low. J. Phys. Chem. 95: 1159–1167. Bartell, L. S. and Dibble, T. S., 1991b. Kinetics of phase changes in large molecular clusters. Z. Phys. D 20: 255–257. Bartell, L. S., Valente, E., and Calliat, J. C., 1987. Electron diffraction studies of supersonic jets. 8. Nucleation of various phases of SF6, SeF6 and TeF6. J. Phys. Chem. 91: 2498–2503. Bartell, L. S., Sharkey, L. R., and Shi, X., 1988. Electron difraction and Monte Carlo studies of liquids. 3. Supercooled benzene. J. Am. Chem. Soc. 110: 7006–7013. Bartell, L. S., Harsanyi, L., and Valente, E. J., 1989. Phases and phase changes of molecular clusters generated in supersonic low. J. Phys. Chem. 93: 6201–6205. Beck, T. L. and Berry, R. S., 1988. he interplay of structure and dynamics in the melting of small clusters. J. Chem. Phys. 88: 3910–3922.

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Beck, T. L., Jellinek, J., and Berry, R. S., 1987. Rare gas clusters: Solids, liquids, slush and magic numbers. J. Chem. Phys. 87: 545–554. Beck, T. L., Leitner, D. M., and Berry, R. S., 1988. Melting and phase space transitions in small clusters: Spectral characteristics, dimensions and K-entropy. J. Chem. Phys. 89: 1681–1694. Berry, R. S., 1994. Phase transitions in clusters: A bridge to condensed matter. In Linking Gaseous and Condensed Phases of Matter: he Behavior of Slow Electrons, Christophorou, L. G., Illenberger, E., and Schmidt, W. F. (Eds.), pp. 231–249. New York: Plenum. Berry, R. S., 1997. Melting and freezing phenomena. Microsc. hermophys. Eng. 1: 1–18. Berry, R. S., 1999. heory of Atomic and Molecular Clusters, Jellinek, J. (Ed.), Springer-Verlag, Berlin, Germany, p. 7, 14, 19. Berry, R. S., 2004. Remarks on the negative heat capacities of clusters. Israel J. Chem. 44: 211–214. Berry, R. S. and Levine, R. D., 2003. Progress in Experimental and heoretical Studies of Clusters, Kondow, T. and Mafuné, F. (Eds.), World Scientiic, Singapore, p. 22. Berry, R. S. and Smirnov, B. M., 2009. Observability of coexisting phases of clusters. Int. J. Mass Spectrom. 280: 204–208. Berry, R. S., Jellinek, J., and Natanson, G., 1984a. Unequal freezing and melting temperatures for clusters. Chem. Phys. Lett. 107: 227–230. Berry, R. S., Jellinek, J., and Natanson, G., 1984b. Melting of clusters and melting. Phys. Rev. A 30: 919–931. Berry, R. S., Beck, T. L., Davis, H. L., and Jellinek, J., 1988. Solidliquid phase behavior in microclusters. In Evolution of Size Efects in Chemical Dynamics, Part 2, Prigogine, I. and Rice, S. A. (Eds.), pp. 75–138. New York: John Wiley & Sons. Bonacic-Koutecky, V., Jellinek, J., Wiechert, M., and Fantucci, P., 1997. Ab initio molecular dynamics study of solid-to-liquid transitions in Li0+, Li10 and Li11+ clusters. J. Chem. Phys. 107: 6321–6334. Breaux, G. A., Benirschke, R. C., Sugai, T., Kinnear, B. S., and Jarrold, M. F., 2003. Hot and solid gallium clusters: Too small to melt. Phys. Rev. Lett. 91: 215508 (4). Breaux, G. A., Benirschke, R. C., and Jarrold, M. F., 2004. Melting, freezing, sublimation, and phase coexistence in sodium chloride. J. Chem. Phys. 121: 6502–6507. Briant, C. L. and Burton, J. J., 1973. hermodynamics–melting of small clusters of atoms. Nature Phys. Sci. 243: 100–102. Briant, C. L. and Burton, J. J., 1975. Molecular dynamics study of the structure and thermodynamic properties of argon microclusters. J. Chem. Phys. 63: 2045–2058. Chacko, S., Joshi, K., Kanhere, D. G., and Blundell, S. A., 2004. Why do gallium clusters have a higher melting point than the bulk? Phys. Rev. Lett. 92: 135506 (4). Cheng, H.-P. and Berry, R. S., 1992. Surface melting of clusters and implications for bulk matter. Phys. Rev. A 45: 7969–7980. Davis, H. L., Jellinek, J., and Berry, R. S., 1987. Melting and freezing in isothermal Ar13 clusters. J. Chem. Phys. 86: 6456–6469.

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Davis, H. L., Beck, T. L., Braier, P. A., and Berry, R. S., 1988. Time scale considerations in the characterization of melting and freezing in microclusters. In The Time Domain in Surface and Structural Dynamics, Long, G. J. and Grandjean, F. (Eds.), pp. 535–549. Dordrecht, the Netherlands: Kluwer. Dibble, T. S. and Bartell, L. S., 1992a. Electron difraction studies of the kinetics of phase changes in molecular clusters. 2. Freezing of CH3Cl3. J. Phys. Chem. 96: 2317–2322. Dibble, T. S. and Bartell, L. S., 1992b. Electron difraction studies of the kinetics of phase changes in molecular clusters. 3. Solid-state phase transitions in SeF6 and (CH3)3CCl. J. Phys. Chem. 96: 8603–8610. Dinda, P. T., Vlastou-Tsinganos, G., Flytzanis, N., and Mistriotis, A. D., 1994. he melting behavior of small silicon clusters. Phys. Lett. A 191: 339–345. Doye, J. P. K. and Wales, D. J., 1995. Calculation of thermodynamic properties of small Lennard-Jones clusters incorporating anharmonicity. J. Chem. Phys. 102: 9659–9672. Etters, R. D. and Kaelberer, J. B., 1975. hermodynamic properties of small aggregates of rare-gas atoms. Phys. Rev. A 11: 1068–1079. Etters, R. D. and Kaelberer, J. B., 1977. On the character of the melting transition in small atomic aggregates. J. Chem. Phys. 66: 5112–5116. Etters, R. D., Danilowicz, R., and Kaelberer, J., 1977. Metastable states of small rare gas crystallites. J. Chem. Phys. 67: 4145–4148. Farges, J., DeFeraudy, M. F., Roualt, B., and Torchet, G., 1975. Structure compacte désordonnée et agrégats moléculaires modèls polytétaédriques. J. Phys., Paris 36; 13–17. Farges, J., DeFeraudy, M. F., Roualt, B., and Torchet, G., 1977. Transition dans l’ordre local des agrégats de quelques dizaines d’atomes. J. Phys., Paris 38: 47–51. Farges, J., deFeraudy, M. F., Raoult, B., and Torchet, G., 1983. Noncrystalline structure of argon clusters. I. Polyicosahedral structure of ArN. J. Chem. Phys. 78: 5067–5080. Farges, J., deFeraudy, M. F., Raoult, B., and Torchet, G. 1986. Noncrystalline structure of argon clusters. 2. Multilayer icosahedral structure of ArN clusters (50 ≤ N ≤ 750). J. Chem. Phys. 84: 3491–3501. Farges, J., DeFeraudy, M. F., Roualt, B., and Torchet, G. 1987a. From ive-fold to crystalline symmetry in large clusters. In Large Finite Systems, Jortner, J., Pullman, A. and Pullman, B. (Eds.), pp. 113–118. Dordrecht, the Netherlands: Reidel. Farges, J., DeFeraudy, M. F., Roualt, B., and Torchet, G. 1987b. Atomic structure of small clusters: he why and how of the ive-fold symmetry. In Physics and Chemistry of Small Clusters, Jena, P., Khanna, S. N., and Rao, B. K. (Eds.), pp. 15–24. New York: Plenum. Garzón, I. L. and Jellinek, J., 1992. Melting of nickel clusters. In Physics and Chemistry of Finite Systems: From Clusters to Crystals, Jena, P., Khanna, S. N. and Rao, B. K. (Eds.), pp. 405–410. Dordrecht, the Netherlands: Kluwer.

Handbook of Nanophysics: Principles and Methods

Gobet, F., Farizon, B., Farizon, M. et al., 2002. Direct experimental evidence for a negative heat capacity in the liquid-to-gas phase transition in hydrogen cluster ions: Backbending of the caloric curve. Phys. Rev. Lett. 89: 183403 (4). Hill, T. L., 1963. he hermodynamics of Small Systems, Part 1. New York: W. A. Benjamin. Jellinek, J. and Goldberg, A., 2000. On the temperature, equipartition, degrees of freedom and inite size efects: Application to aluminum clusters. J. Chem. Phys. 113: 2570–2582. Jellinek, J., Beck, T. L., and Berry, R. S., 1986. Solid-liquid phase changes in simulated isoenergetic Ar13. J. Chem. Phys. 84: 783–2794. Joshi, K., Kanhere, D. G., and Blundell, S. A., 2002. Abnormally high melting temperature of the Sn10 cluster. Phys. Rev. B 66: 155329(5). Joshi, K., Kanhere, D. G., and Blundell, S. A., 2003. hermodynamics of tin clusters. Phys. Rev. B 67: 235413 (8). Joshi, K., Krishnamurty, S., and Kanhere, D. G., 2006. “Magic Melters” have geometric origin. Phys. Rev. Lett. 96: 135703 (4). Kaelberer, J. B. and Etters, R. D., 1977. Phase transitions in small clusters of atoms. J. Chem. Phys. 66: 3233–3239. Kofman, R., Cheyssac, P., Garrigos, R., Lereah, Y., and Deutscher, G., 1989. Solid liquid transition of metallic clusters—Occurrence of surface melting. Physica A 157: 631–638. Kofman, R., Cheyssac, P., and Garrigos, R., 1990. From the bulk to clusters: Solid-liquid phase transitions and precursor efects. Phase Transit. 24–26: 283–342. Kunz, R. E. and Berry, R. S., 1993. Coexistence of multiple phases in inite systems. Phys. Rev. Lett. 71: 3987–3990. Kunz, R. E. and Berry, R. S., 1994. Multiple phase coexistence in inite systems. Phys. Rev. E 49: 1895–1908. Labastie, P. and Whetten, R. L., 1990. Statistical thermodynamics of the cluster solid–liquid transition. Phys. Rev. Lett. 65: 1567–1570. Maillet, J. B., Boutin, A., Buttefey, S., Calvo, F., and Fuchs, A. H., 1998. From molecular clusters to bulk matter. I. Structure and thermodynamics of small CO 2, N2, and SF6 clusters. J. Chem. Phys. 109: 329–337. McGinty, D. J., 1973. Molecular dynamics studies of the properties of small clusters of argon atoms. J. Chem. Phys. 58: 4733–4742. Natanson, G., Amar, F., and Berry, R. S., 1983. Melting and surface tension in microclusters. J. Chem. Phys. 78: 399–408. Nauchitel, V. V. and Pertsin, A. J., 1980. A Monte Carlo study of the structure and thermodynamic behaviour of small Lennard-Jones clusters. Mol. Phys. 40: 1341–1355. Pawlow, P., 1909a. Über die Abhängigkeit des Schmelzpunkte von der Oberlächenenergie eines festen Körpers. Z. Phys. Chem. 65: 1–35. Pawlow, P., 1909b. Über die Abhängigkeit des Schmelzpunkte von der Oberlächenenergie eines festen Körpers (Zusatz.). Z. Phys. Chem. 65: 545–548. Proykova, A., Radev, R., Li, F.-Y., and Berry, R. S., 1999. Structural transitions in small molecular clusters. J. Chem. Phys. 110: 3887–3896.

Phase Changes of Nanosystems

Proykova, A., Pisov, S., and Berry, R. S., 2001. Dynamical coexistence of phases in molecular clusters. J. Chem. Phys. 115: 8583–8591. Proykova, A., Nikolova, D., and Berry, R. S., 2002. Symmetry in order-disorder changes of molecular clusters. Phys. Rev. B 65: 085411 (6). Proykova, A., Pisov, S., Radev, R., Mihailov, P., Daykov, I., and Berry, R. S., 2003. Temperature induced phase transformations of molecular nanoclusters. Vacuum 68: 87–95. Rytkönen, A., Häkkinen, H., and Manninen, M., 1998. Melting and octupole deformation of Na40. Phys. Rev. Lett. 80: 3940–3943. Schmidt, M., Kusche, R., Kronmüller, W., von Issendorf, B., and Haberland, H., 1997. Experimental determination of the melting point and heat capacity for a free cluster of 139 sodium atoms. Phys. Rev. Lett. 79: 99–102. Schmidt, M., Kusche, R., von Issendorf, B., and Haberland, H., 1998. Irregular variations in the melting point of sizeselected atomic clusters. Nature 393: 238–240. Schmidt, M., Kusche, R., Hippler, T., Donges, J., Kronmüller, W., von Issendorf, B., and Haberland, H., 2001a. Negative heat capacity for a cluster of 147 sodium atoms. Phys. Rev. Lett. 86: 1191–1194. Schmidt, M., Hippler, T., Donges, J., Kronmüller, W., von Issendorf, B., and Haberland, H., 2001b. Caloric curve across the liquid-to-gas change for sodium clusters. Phys. Rev. Lett. 87: 203402 (1–4).

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Shvartsburg, A. A. and Jarrold, M. F., 1999. Tin clusters adopt prolate geometries. Phys. Rev. A 60: 1235–1239. Shvartsburg, A. A. and Jarrold, M. F., 2000. Solid clusters above the bulk melting point. Phys. Rev. Lett. 85: 2530–2532. Stace, A. J., 1983. Experimental evidence of a phase transition in a microcluster. Chem. Phys. Lett. 99: 470–474. homson, W., 1871. On the equilibrium of vapor at a curved surface of liquid. Philos. Mag. 42: 448–452. Valente, E. J. and Bartell, L. S., 1983. Electron difraction studies of supersonic jets. V. Low temperature crystalline forms of SF6, SeF6, and TeF6. J. Chem. Phys. 79: 2683–2686. Valente, E. J. and Bartell, L. S., 1984a. Electron difraction studies of supersonic jets. VI. Microdrops of benzene. J. Chem. Phys. 80: 1451–1457. Valente, E. J. and Bartell, L. S., 1984b. Electron difraction studies of supersonic jets. VII. Liquid and plastic crystalline carbon tetrachloride. J. Chem. Phys. 80: 1458–1461. Vlachos, D. G., Schmidt, L. D., and Aris, R., 1992. Structures of small metal clusters. II. Phase transitions and isomerizations. J. Chem. Phys. 96: 6891–6901. Wales, D. J. and Berry, R. S., 1994. Coexistence in inite systems. Phys. Rev. Lett. 73: 2875–2878.

21 Thermodynamic Phase Stabilities of Nanocarbon

Qing Jiang Jilin University

Shuang Li Jilin University

21.1 Introduction ........................................................................................................................... 21-1 21.2 Nanothermodynamics .......................................................................................................... 21-3 21.3 Phase Equilibria and Phase Diagram of Bulk and Nanocarbon ....................................21-4 21.4 Solid Transition between Dn and Gn with the Efects of γ and f ..................................... 21-5 21.5 Relative Phase Stabilities of Dn, Compared with B, O, and F .........................................21-6 21.6 Graphitization Dynamics of Dn .......................................................................................... 21-7 21.7 Summary and Prospects .......................................................................................................21-8 Acknowledgments ............................................................................................................................. 21-9 References........................................................................................................................................... 21-9

21.1 Introduction Carbon, as one of the most versatile, interesting, and useful elements, is abundant in the earth’s crust, constituting about 0.02%. Carbon is also a unique element in the Periodic Table of Elements, which is the basis for a variety of compounds due to its propensity to form a wide range of bonding networks. Under special circumstances, the s and p orbitals in an atom combine to form hybrid spn orbitals, where n indicates the number of p-orbitals involved, which may have a value of 1, 2, or 3. he 3A, 4A, and 5A group elements of the Periodic Table are those which most oten form these hybrids. he driving force for the formation of hybrid orbit is a lower energy state for the valence electrons. For carbon, sp, sp2, and sp3 hybrids may be formed. he sp3 electronic state is of primary importance in organic and polymer chemistries. he shape of the sp3 hybrid determines the 109° (or tetrahedral) angle found in polymer chains. Organic chemistry, which is established on the basis of the C–H bonding, owes its existence to the carbon. Moreover, carbon is also regarded as the interface between living and nonliving matters. he solid carbon itself exhibits diferent structures. In bulk form, carbon shows amorphous as well as crystalline diamond (DB) and graphite (GB) structures. DB is a metastable carbon polymorph at room temperature under atmospheric pressure. Its crystalline structure is a variant of the zinc blende, in which carbon atoms occupy all positions (both Zn and S), as indicated in Figure 21.1a. hus, each carbon bonds to four other carbons, and these bonds are totally covalent by sp3 hybridization. his is appropriately called the diamond cubic crystal structure, which is also found for other group IVA elements in the Periodic Table.

GB has a crystal structure (Figure 21.1b) being distinctly different from that of diamond, which is a more stable state than GB at ambient temperature and pressure. he structure of GB is composed of layers of hexagonally arranged carbon atoms; within the layers, each carbon atom is bonded to three coplanar neighbor atoms by strong covalent bonds (sp2 hybridization). he fourth bonding electron participates in a weak van der Waals type of bond between the layers. Although GB widely exists in nature, another crystalline carbon, DB, is even more distinguished, which is ascribed to its unique physical and chemical properties. DB has the highest incompressibility among all elements under ambient pressure with high elastic modulus and strength-to-weight ratio (Bean et al. 1986). In addition, its high melting temperature, high Debye temperature, small intrinsic anharmonicity, and chemical inertness, qualify DB as a special reference material for the realization of an “international practical pressure scale” (IPPS) (Aleksandrov et al. 1987, Holzapfel 1997, Tse and Holzapfel 2008). he tribological properties of DB have been exploited in macro- and micro/nanometer scales. It is demonstrated that the DB could be used as a coating for the seals of rotating shats and as a monolithic atom force microscope (AFM) tip for imaging micromachining applications. he DB i lms are also used as structural materials in microelectric-mechanic system (MEMS) and nanoelectric-mechanic system (NEMS) as mechanical resonators, micromechanical switches, and ink jets for corrosive liquids. Moreover, as a conformal coating, DB has been used for the passivation of surfaces and the fabrication of scanning probe microscope (SPM) cantilevers and eicient ield emitters. 21-1

21-2

Handbook of Nanophysics: Principles and Methods

(a)

(b)

(c)

(d)

(e)

(f )

FIGURE 21.1 Schematical diagram of diferent structures of nanocarbon: (a) D, (b) G, (c) F, (d) O, (e) B, (f) U.

Beginning in the late 1980s, ine-grained polycrystalline i lms of DB were grown for optical coatings, thin support membranes in x-ray windows and x-ray lithography masks (Butler and Sumant 2008), and optical materials to fabricate “whispering gallery” mode optical resonators, two-dimensional photonic crystals, and UV-transparent electrodes on SiC. Nanodiamond (Dn) i lms with grain size d in the nanometer scale have also been incorporated into Si on insulator (SOI) wafers. hin-i lm transistors with covalent molecular functionalization have been demonstrated. Moreover, chemically modiied Dn surfaces are proved to be an important and stable platform for chemical and DNA sensing. One of the basic concerns in mechanics, physics, chemistry, and biomedical engineering of solids is the microstructure of a solid, which is determined by the chemical composition, which refers to the arrangement of the atoms and electrons (the atomic and electronic structures), as well as the size of a solid in one, two, or three dimensionalities (Gleiter 2000). Crystal structures relect a complex interplay between intrinsic factors (composition, band structure, valence electrons, bonding states, structural symmetry, etc.) and extrinsic factors (temperature, pressure/ stress, electric ield, magnetic ield etc.). A change in any of these factors may trigger a structural transition. Conventionally, studies of phase transitions in condensed matters have assumed that the pressure P, the temperature T, and the amount of the ith component or molecular number in a system Ni, are the variables in determining the stable states of a material. his has been well described by using the classical thermodynamics theory based on Gibbs free energy and the statistic mechanics. With the progress of nanoscience and nanotechnology in recent 30 years, a diverse range of nanomaterials have been vigorously developed in order to exploit their properties for highperformance nanodevices. he traditional thermodynamics cannot explain the phase transition behavior of nanomaterials (Clark

et al. 2005, Abudukelimu et al. 2006). In this special ield, a new freedom degree—the material size d, plays an important role in determining the physical properties of nanomaterials (Jiang and Yang 2008). d as an intrinsic factor, which is associated with the increased surface/volume ratio, directly relates to the dimensionalities and the shapes (particles, nanowires, thin i lms, polyhedra, etc.) of nanocrystals (Barnard 2006a). For nanosized carbon, several new structures of fullerenes (F), nanotubes (U), and onionlike carbon (O) have been observed in experiments. Recent work also indicates that the transition from Dn to O has led to an introduction of a new intermediate phase of bucky diamond (B) with a D core encased into an O shell (Barnard 2006b). In a chemical viewpoint, these structures of carbon are bonded by two essential forms, namely, sp2 (trigonal) and sp3 (tetrahedral) hybridizations. he details are listed below (1) sp2 hybridization: G, F, O, and U consist of two-dimensional carbon layers stacked in an AB sequence with three bonds, which is linked by a weak van der Waals interaction induced by a delocalized π-orbital; (2) sp3 hybridization: D has a three-dimensional structure in which each carbon atom is bonded by four other carbon atoms; (3) both sp2 and sp3 hybridizations: B has sp2 and sp3 structures at the surface and in the core, respectively. Figure 21.1 shows a schematic diagram for these diferent structures of nanocarbon, which will be illustrated in details in the following. F exists in discrete molecular form, and consists of a hollow spherical cluster of 60 carbon atoms; a single molecule is denoted by C60. Each molecule is composed of groups of carbon atoms that are bonded to one another to form both hexagon (sixcarbon atom) and pentagon (ive-carbon atom) geometrical conigurations. One such molecule, shown in Figure 21.1c, is found to consist of 20 hexagons and 12 pentagons, which are arrayed such that no two pentagons share a common side; the molecular surface thus exhibits the symmetry of a soccer ball.

21-3

Thermodynamic Phase Stabilities of Nanocarbon

U, by virtue of its curved graphitic structure, has a small diameter (1 to ≤ 100 nm), and a high aspect ratio (Figure 21.1f). O, which consists of concentric graphitic shells, is one of the fullerene-related materials together with C60 and carbon nanotubes. An ideal O is composed of up to several tens of concentric graphitic spherical shells with adjacent shell separation using a C60 as nucleus (References). he innermost shell is formed by 60 carbon atoms, and the carbon atoms of other layers increase in turn by 60n2 (n denotes the number of layer). An intermediate phase between O and D is B, which is formed by a diamond-like core and an onion-like outer shell (Figure 21.1e). It is known that GB is the stable phase while DB is the metastable phase in bulk form of carbon under ambient pressure Pa and room temperature Tr. However, the energetic diference between GB and DB is only 0.02 eV/atom, where the unit eV/ atom denotes the electronic volt per atom. As a result, their relative stability could be changed easily through changing surrounding conditions, such as T, P, and d of the material. For example, as P increases, DB becomes more stable than GB due to higher density of the DB. Note that Ni = N is considered as a constant since the considered system consists of the unique component—carbon, where N denotes the total number of carbon atoms. Under the condition of P = Pa and T = Tr, DB could also be stable by changing its d. As d decreases, D n and the above new denser packing phases are easily formed and become stable. It is noted that the metastable state could also persist due to kinetic reasons, such as suiciently large energetic barriers and low transition temperature. In 1960s and 1970s, it was mentioned that Dn could be more stable than the nanosized G (Gn) based on the successful synthesis of Dn by using vapor deposition of carbon (Fedoseev et al. 1989). In this work, the G–D phase transition will be irst considered, which acts as a reference for other phase transitions.

21.2 Nanothermodynamics he classical thermodynamics on macroscopic systems has long been well established (Gibbs 1878, Rusanov 1996), which describes adequately the macroscopic behaviors of bulk systems with the change of macroscopic parameters where the astrophysical objects and nanoscaled systems are excluded (Wang and Yang 2005). he basic thermodynamic relationship for a macroscopic system at equilibrium can be expressed as (Hill 2001), du = T d S − P d V

(21.1)

where u is the internal energy S is the entropy P denotes the pressure V denotes the volume his equation connects incremental changes of internal energy, heat, and work.

In 1878, the monumental work of Gibbs irst formulated a detailed thermodynamic phase equilibrium theory (Gibbs 1878) in which he transformed the previous complicated thermodynamics of cycles into the simpler thermodynamics of potentials and introduced chemical potentials. Gibbs generalized Equation 21.1 by allowing, explicitly, variations in Ni of the diferent components in the system (Hill 2001). As a result, Equation 21.1 became du = T dS − P dV + Σμi dNi, or in a more general and modernized form, dg = −S dT + V dP + γ dA +

∑μ dN i

i

(21.2)

i

where g and μi denote Gibbs free energy and the chemical potential of the component i, respectively A is the surface (interface) area Equation 21.2 thus could predict various equilibria (chemical, phase, osmotic, surface, etc.) and examine many other topics, such as the equilibrium condition of a solid and a surrounding medium (Rusanov 1996). Equation 21.2 is much less diicult to use than to understand although it is very simple in mathematics. Although Equation 21.2 has a wide application range, it is essentially used to solve the phase equilibrium and related phenomena, such as phase diagrams. Later, the thermodynamic deinitions of γ and surface stress f are clariied to formulate surface thermodynamics (Hill 2001). his issue becomes increasingly important due to the appearance of nanotechnology. However, due to the content limitation of this chapter, size dependences of surface thermodynamic functions can be referenced elsewhere (Jiang and Lu 2008). Note that Equation 21.2 with a statistic basis is only valid for materials being at least larger than submicron size while the parameter d in Equation 21.2 is actually a constant of bulk. Since nanomaterials and nanotechnology go into the scientiic and technical worlds now, extending the validity of the macroscopic thermodynamics and statistical mechanics into the nanometer scale becomes an urgent task. he above task can be reached by deeply analyzing the size dependence of a typical known process of the thermodynamic phase equilibrium, such as the melting (Dash 1999). here are the so-called speciic and smooth size efects. he former is responsible for the existence of “magic numbers” and related irregular variation of properties in clusters, whereas the latter pertains to nanostructures in the size domain between clusters and bulk systems. Within this broad size range, mechanical, physical, and chemical properties are oten seen to change according to relatively simple scaling equations involving a power-law dependence on the system size due to the energy contributions of γ to the total g of the system (Lu 1996). hese property changes lead to, on one hand, an emerging interdisciplinary ield involving solid state physics, chemistry, biology, and materials science to synthesize materials and/or devices with new properties by controlling their microstructures on the atomic level. To utilize the

21-4 50

(5300, 50)

40

30 P (GPa)

new properties of nanomaterials and to guarantee the working stability of the nanosystems, it is of consequence and exigency to develop a suitable theoretical tool to address them naturally. On the other hand, the rapid progress in the synthesis and processing of materials with the structures at the nanometer size has created a demand for better scientiic understanding of the thermodynamics on nanoscale, namely thermodynamics of small systems or nanothermodynamics. One of the most important applications of the nanothermodynamics is to establish the corresponding phase diagram where the relative stability of phases can be well discussed and understood with the change of variables of T, P, and d. his is also the case for carbon. Traditionally, in order to make use of Dn in a variety of engineering applications, T–P phase diagram of carbon has been established to understand the condition of high pressure synthesis of Dn (Bean et al. 1986, Barnard 2006b). Recently, constructing the phase diagram of nanocarbon and establishing the phase boundary between Dn and Gn by taking into account the efects of d, T, and P together have been carried out (Wang et al. 2005), which will be introduced in the next section.

Handbook of Nanophysics: Principles and Methods

D L

20 (5000, 12) (5817, 5.5)

10 (0, 1.7)

G

0 0

1000

2000

(5200, 5.5) (5000, 0.011) (4800, 0.01)

3000 T (K)

4000

5000

6000

21.3 Phase Equilibria and Phase Diagram of Bulk and Nanocarbon

FIGURE 21.2 T–P phase diagram of bulk carbon (solid lines) (Bundy et al. 1996) where the G–L phase boundary has been corrected with recent experimental results (the dash line) (Young 1991, Bundy et al. 1996, Korobenko 2001, Korobenko and Savvatimskiy 2003). he symbols Ο denote characterized points. (Reproduced from Yang, C.C. and Li, S., J. Phys. Chem. C, 112, 1423, 2008. With permission.)

Before the beginning of the discussion for the phase diagram of nanocarbon and the nanophase stability, we irst describe the future of the phase diagram of bulk carbon. For bulk carbon, the liquid carbon existed at higher T is metallic (Van hiel and Ree 1993), although there is still some conjectures regarding its exact structure. he phase transition is associated with changes of the density and the structure. At 4000 < T < 6500 K under high P, irst-order liquid–liquid phase transitions have been undertaken where the liquid clusters are more likely to be G-like sp2 than D-like sp3 (Van hiel and Ree 1993) However, some studies have predicted sp3 liquid clusters (Galli et al. 1989), such as a simple cubic structure (Grumback and Martin 1996). Moreover, the sp bond is considered to be predominant in low-density liquid with little sp3 character whereas the high-density liquid is mostly sp3 bonded with little sp character (Glosli and Ree 1999). It is evident that more detailed works, especially theoretical works, are needed to understand structural characteristics of liquid carbon since they are diicult to be determined accurately in experiments at high temperatures and under high-pressure environments. Under more moderate P and T, a wide spectrum of many metastable forms and complex hybrid carbon may be present (including various speciic types of graphite) due to high activation energies for solid–solid phase transitions (Gust 1980). In the past decades (beginning in the 1960s) (Young 1991), the P–T phase diagram (including G, D, and liquid L phases) of carbon has been continually updated on the basis of the information obtained from newly developed technologies. One of the most comprehensive carbon phase diagrams proposed by Bundy et al. (1996) (the solid lines in Figure 21.2) shows that (1) GB undergoes a well-characterized irst-order transition upon pressurization

to DB and (2) both phases melt to form L as T increases. On the other hand, recent advances provide new experimental results to improve the accuracy of GB–L phase boundary (the dash line in Figure 21.2) (Korobenko 2001, Korobenko and Savvatimskiy 2003, Savvatimskii 2003, Basharin et al. 2004, Savvatimskiy 2005). It is found that the phase line is terminated by a critical point at 8801 K and 10.56 GPa and by a triple point on the melting line of GB at 5133 K and 1.88 GPa. Recently, the P–T phase diagram of carbon was reviewed (Barnard 2006b) where the underlying basis for recent studies has been summarized, extending the bulk carbon phase diagram to the nanometer scale. In general, the thermodynamic properties of carbon nanocrystals may be calculated by considering the coexistence of several phases of gases, L, and solids in chemical equilibrium with the same d. One method of introducing size dependence into the bulk carbon phase diagram is to add the contribution of γ to g for an N-atom cluster in a given phase, and to dei ne the phase equilibrium by equating g values for the cluster of each phase (Ree et al. 1999). A number of phase diagrams based on this principle have been proposed, each exhibiting displacement of the phase equilibrium lines for the clusters with 102 < N < 104. In this case, a time t and P–T path dependent value for the nonequilibrium Dn fraction of the soot mixture is simulated and the approximate computing methods for computing the detonation product pressure for the kinetics derived mixture of Dn and Gn are discussed (Viecelli and Ree 2000, Viecelli et al. 2001). In addition, when N ~ 100, the melting temperature of small particles is lower than that of the bulk carbon (Viecelli et al. 2001). With similar considerations, a three-dimensional phase diagram for nanocarbon has been established where the size

21-5

Thermodynamic Phase Stabilities of Nanocarbon

dependence was validated and the bulk P–T phase diagram was shown in the horizontal plane (Verechshagin 2002). In this study, although Dn appears as the most stable phase at d < 3 nm, a lower limit for Dn phase stability is introduced at 1.8 nm. A T-dependent transition size dc between Gn and Dn was discussed by using a thermodynamic model with an inclusion of charge lattice energy. he dc is calculated to be 15 nm at 0 K, 10.2 nm at Tr, 6.1 nm at 798 K, 4.8 nm at 1073 K, and 4.3 nm at 1373 K (Gamarnik 1996a,b). herefore, dc decreases with the increasing of T . Hwang et al. outlined a chemical potential model (Hwang et al. 1996a) and a charged cluster model (Hwang et al. 1996b) to describe the relative stability of Gn and Dn for the lowpressure synthesis of Dn. Around this time, using irst-principles and semiempirical potentials, the phase stability of carbon nanoparticles has been investigated on the basis of the formation heat of graphene sheet and hydrogenated Dn (Ree et al. 1999, Barnard et al. 2003a). Most recently, the size dependence of Gn–Dn transition using Laplace–Yang equation by considering the efects of γ or f has been calculated (Jiang et al. 2000, Yang and Li 2008). Moreover, a theoretical result shows that the surface of Dn being larger than 1 nm reconstructs in a fullerene-like manner, giving rise to B (Raty et al. 2003). he polymorphic behavior of nanocarbon in light of considering the contribution of Pin induced by the f is also investigated, where P in denotes the curvature-induced internal pressure. Figure 21.3 shows a d-dependent T–P phase diagram of carbon where the phase equilibria of Gn–Dn, Gn–Ln, as well as Dn–Ln are considered individually (Yang and Li 2008). As shown in the igure, the melting temperature of Gn decreases with decreasing d. Moreover, the Dn/Gn/Ln triple point shits toward lower T and P regions with decreasing d, resulting in large reduction of the stable region for Gn. 20 Bulk d = 5 nm d = 2 nm 15

21.4 Solid Transition between Dn and Gn with the Effects of γ and f To better clarify the size efect on the polymorphism of carbon with nanothermodynamics, the bulk phase diagram of carbon (Bertsch 1997) can be taken as the basis. he phase-equilibrium line function P(T) of D–G phase transition in the bulk is approximately expressed as (Bundy et al. 1996) P(T )(Pa) = 2.01 × 106 T + 2.02 × 109

D

5

G 0 1000

2000

4f ⎛ 4 ⎞ ⎡ Svib H m ⎤ = h d ⎜⎝ d ⎟⎠ ⎢⎣ 2κVm R ⎥⎦

1/2

(21.4)

where R is the ideal gas constant Hm denotes the bulk melting enthalpy of crystals Svib is the vibrational part of the overall melting entropy Sm κ is the compressibility h is the atomic diameter

10

0

(21.3)

Nanothermodynamic analysis takes into account the capillary efect induced by the curvature of Dn and Gn with the Laplace– Young equation for spherical and quasi-isotropic nanocrystals (although the real shape of Dn should be polyhedral (Kwon and Park 2007), this consideration should result in minor error) (Zhao et al. 2002, Jiang and Chen 2006), and the Pin is given as Pin =

L P (GPa)

he phase transition between Dn and O structures has also been previously addressed by a thermodynamic quasiequilibrium theory (Banhart and Ajayan 1996). he crossover from F to closed U has also been analyzed recently (Park et al. 2002). Using traditional analysis, the relative stability of Dn and Gn, and the deined size regions of the stability for F, O, and B are considered (Barnard et al. 2003b). As d increases, the stability of carbon changes from F to O to B to Dn, and to Gn. hree stability regions of nanocarbon can be outlined as follows (Tomanek and Schluter 1991): (1) N < 20, the most stable geometry is one-dimensional ring cluster; (2) 20 < N < 28, the energetics of quite diferent types of geometries of clusters is similar; (3) for larger clusters, F should be more stable. To better understand the above experimental, theoretical and simulation results, a systematic and standard thermodynamic description for these transitions is required to establish the relationship between d and stability of Dn, and to exploit the origin of the stability of Dn in the nanometer scale.

3000

4000

5000

6000

T (K)

FIGURE 21.3 T–P phase diagrams of bulk and nanocarbon. he solid, dash, and dot lines denote the bulk d = 5 nm and d = 2 nm, respectively. (Reproduced from Yang, C.C. and Li, S., J. Phys. Chem. C, 112, 1423, 2008. With permission.)

From Equation 21.4, f = 3.54 J/m2 is determined for the widely studied C60, which is consistent with the computer simulation result of f = 2.36 ~ 4.02 J/m2 (Robertson et al. 1992), where the f value is transformed from eV/atom to J/m2. Adding Pin term into Equation 21.3, we have P(T , d) = 2.01 × 10 6T + 2.02 × 109 −

4f d

(21.5)

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Handbook of Nanophysics: Principles and Methods

Under Pa = 105 Pa in equilibrium, 4f/d + 105 = 2.01 × 106T + 2.02 × 109, or d = 4f/(2.01 × 106T + 2.02 × 109 − 105) based on Equation 21.5. his can be used to calculate the d–T phase-equilibrium line, as shown in Figure 21.4. It is evident that the calculation results are in good agreement with experimental results. At equilibrium, Dn and G n should be under the same P or f where Dn and Gn have diferent h values and thus distinct d values. As a irst order approximation, f = (f D + fG)/2 = 3.6 J/m2 is taken in Equation 21.5 with f D = 6.1 J/m2 and fG = 1.1 J/m2 (Jiang et al. 2000), where the subscripts D and G denote the related phases, respectively. From Figure 21.4, it is found that the equilibrium d of Dn and Gn decreases from 8.5 nm at 0 K to 3 nm at 1500 K. As d decreases, the stability of Dn increases compared with that of G n. he predictions of this model correspond to the experimental results better than that of the charge lattice model (Gamarnik 1996a,b). As shown in the Figure 21.4, the model predictions based on f ≈ γ are also consistent with the experimental results, where γ = (γD + γG)/2 = 3.485 J/m2 with γD = 3.7 J/m2 and γG = 3.27 J/m2. hus, f ≈ γ for carbon. However, this criterion is not suitable for other materials in most cases. From a thermodynamic viewpoint, the fundamental diference between a solid surface and a liquid surface is the distinction between f and γ. Essentially γ describes a reversible work per unit area to form a new surface while f denotes a reversible work per unit area to elastically stretch the surface, which corresponds to the derivative of γ with respect to the strain tangential to the surface (Jiang et al. 2000, Yang and Li 2008). For L, γ = f while for the solid, γ ≠ f. It is noted that the Pin for a solid difers from the Laplace pressure for a spherical L droplet surrounded by other L in the equilibrium with Pin = 4γ/d. In fact, f is a vital factor in promoting sp3 bonding in the synthesis of Dn by low T and low P methods (Ree et al. 1999). 12

10 G

d (nm)

8

6

4

D

2 0

300

600

900

1200

1500

T (K)

FIGURE 21.4 he d–T transition diagram of nanocarbon under P = 0 (solid lines) (Yang and Li 2008) where other theoretical [□ (Gamarnik 1996b)] and experimental results [◆ (Chen et al. 1999) and ● (Wang et al. 2005)] are presented for comparisons.

21.5 Relative Phase Stabilities of Dn, Compared with B, O, and F As d < 1.8 nm, carbon structures of nanoparticles are abundant, such as F and O (Shenderova et al. 2002). In order to address a thermodynamic model of size-dependent phase stability and coexistence of B with Dn and F phases, the structural energy or the standard formation heat ΔH f0 at 298.15 K as functions of N for each carbon phase has been calculated by using the density functional theory with the generalized gradient approximation (Barnard et al. 2003a, Barnard 2006b). he technique for obtaining the ΔH f0 is outlined by Winter and Ree (1998) and developed by Barnard et al. (2003a). he ΔH f0 (G), ΔH f0 (D), ΔH f0 (F) ≈ ΔH f0 (O) (the both structures are similar) can be expressed as N ⎛ G 1 G ΔH 0f (G) 3 G ⎞ = ECC + H ⎜ ECH − ECC + ΔH f0 (H)⎟ ⎠ N 2 N ⎝ 2 1 vdw + ΔH f0 (C) + ECC 2

(21.6)

ΔH f0 (D) N ⎛ D 1 D ⎞ D = 2ECC + DB ⎜ EDB − ECC + ΔH f0 (DB)⎟ ⎠ N N ⎝ 2 + ΔH f0 (C) ΔH f0 (F) 3 F EF 1 vdw = ECC + ΔH f0 (C) + strain + ECC N 2 2 R2

(21.7) (21.8)

where NH is the number of terminating hydrogen atoms ECC and ECH denote C–C and C–H bond energy, respectively EDB is the dangling bond energy, which is linearly dependent upon NDB/N with NDB being the number of surface dangling bonds (Barnard et al. 2003a) F denotes the strain energy associated with the curvature Estrain of F vdw ECC is the van der Waals attraction between G sheets or O layers vdw here is no interlayer attraction in F, thus ECC = 0. 0 0 he calculation results of ΔH f (O), ΔH f (F), ΔH f0 (B), and ΔH f0 (Dn) (as a function of d) are shown in Figure 21.5. It is found that (1) ΔH f0 (O) and ΔH f0 (F) of the sp2-bonded O and F are indistinguishable to each other at N < 2000; (2) ΔH f0 (B) is more akin to O than Dn; (3) in the range of 500 < N < 1850, there is a thermodynamic coexistence region of B and Dn. he region was then further broken into three subregions, as indicated in Figure 21.5. At 500 < N < 900 or 1.4 < d < 1.7 nm, ΔH f0 (B) ≈ ΔH f0 (F). Although O is the most stable structure at 900 < N < 1350 or 1.7 < d < 2.0 nm, B and O could coexist in this size range. Moreover, B coexists with Dn at 1350 < N < 1850 or 2.0 < d < 2.2 nm. It is noted that the intersection of B and O stability is very close to that of Dn and F at N = 1100 where a sp3-bonded core becomes more favorable than a sp2-bonded core, irrespective of surface structure.

21-7

Thermodynamic Phase Stabilities of Nanocarbon

Atomic heat of function (eV)

–0.25

–0.30

–0.35 Carbon-onions Fullerenes Bucky-diamond Nanodiamond

–0.40

–0.45

600

800

1000 1200 1400 Carbon atoms (Nc)

1600

1800

2000

FIGURE 21.5 Atomic formation heat of carbon nanoparticles, indicating the relative subregions of coexistence of B with other phases. Uncertainties are indicated for B only.

he relative stability of Dn as a function of surface hydrogenation is considered in this size range by using the i rst-principles calculations (Raty and Galli 2003). It is found that B is in fact energetically preferred even over hydrogenated Dn when d < 3 nm. By comparing various degrees of hydrogen coverage, the diference in ΔH f0 between particles with and without hydrogenated surfaces was found to decrease as d increases in the range of 29 ≤ N ≤ 275. Interestingly, the results was not dependent signiicantly on the hydrogen chemical potential (Raty and Galli 2003). Although the calculations cannot establish exact size at which the crossover between hydrogenated and bucky surfaces occurs, the numerical results suggest that varying the hydrogen pressure (and thus its chemical potential) during synthesis may promote diferent types of thin ilms. Two ranges for the hydrogen chemical potential corresponding to two diferent growth conditions of D thin i lms are proposed: one favors the formation of Dn and the other does that of bulk diamond-like i lms (Raty and Galli 2003).

21.6 Graphitization Dynamics of Dn To avoid graphitization of the full Dn, which is the most important thermal stability condition for any application of Dn, detailed kinetic condition of graphitization must be considered. In other words, even if Dn is metastable, as long as the graphitization is absent, Dn is still workable. As was experimentally reported (Chen et al. 1999a, Butenko et al. 2000, Wang et al. 2005, Osipov et al. 2006, Bi et al. 2008), graphitization occurs at the surface of Dn, or a transition from Dn to B. his is simply due to the energetic drop induced by decrease of deicit bond number where the surface bonding changes from sp3 to sp2. he reaction rate was modeled as a migration rate of the interface between the developing Gn and the remaining Dn. A “reducing sphere” model was used to obtain the rates from the changes in densities (Butenko et al. 2000). he estimated kinetic parameters in an Arrhenius

expression, namely the activation energy, E = 45 ± 4 kcal/mol, and the preexponential factor, A = 74 ± 5 nm/s, allow quantitative calculations of the diamond graphitization rates in and around the indicated temperature range. he calculated graphitization rates agree well with the graphitization rates of Dn with diferent disparity estimated from high-resolution transmission electron microscopy data (Butenko et al. 2000). According to T–P phase diagram of carbon shown in Figure 21.2, Dn is metastable in the region of 713 < T < 1273 K and of 81 < P < 200 MPa where Dn derived from gas phase during the duration of phase transition nucleates. Since d is small enough, γ plays an important role in this process (Zaiser et al. 2000). he phase transition of Dn in this metastable region difers from that of the solid phase Dn. he graphitization is an energetically favorable process, the corresponding Gibbs free energy change is expressed as (Wang et al. 2004) ⎛ πd 3 Δg ⎞ ΔG(dG , P ,T ) = ⎜ G + πdG2 γ G ⎟ f (θ) ⎝ 6VmG ⎠

(21.9)

where Vm denotes the molar volume, the subscript G denotes the corresponding phase Δ shows the change θ is the contact angle f(θ) = (1 − cos θ)2(2 + cos θ)/4 is the so-called heterogeneous factor (in the range from 0 to 1). When ∂ΔG(d)/∂d = 0, the critical diameter of graphitization nuclei dG* is obtained (Wang et al. 2004, Wang and Yang 2005): dG* =

4γ ⎛ 4γ G 5 6 9 ⎞ VmG ⎜⎝ d + 1 × 10 − 2.01 × 10 T − 2.02 × 10 ⎟⎠ ΔV

(21.10)

Accordingly, we obtain the relationship curves between dD of Dn and ΔG(d) at diferent annealing temperatures Ta and f(θ), where dD is the size of the residual Dn, which is shown in Figure 21.6. It is clear that ΔG(d) increases with decreasing dD at a given Ta. For diferent Ta, there are corresponding thresholds of dD in graphitization. As a result, only the surface region of Dn particles is graphitized at a given Ta, whereas the phase is still B. hen, the graphitization proceeds inward on further elevation of Ta at the expense of Dn phase, as proved by the appearance of bands for graphitic structures in the Raman spectrum and x-ray difraction. hus, graphitization would display a staircase behavior with increasing Ta. For example, the threshold diameters of the residual Dn are about 3.5 and 3 nm at annealing temperatures of 1073 and 1423 K, respectively. Graphitization thus hardly proceeds further when dD < 3 ~ 3.5 nm, as the experiments have shown (Wang et al. 2004). For a comparison, a function between the graphitization energy and f(θ) is shown as inset in Figure 21.6. One such property, fundamental to the stability of Dn, is the degree of surface hydrogenation. he analysis on the

21-8

Handbook of Nanophysics: Principles and Methods

1E-11 32 1

1E-12

5 G (10–17J)

1: 1024 K 2: 1273 K 3: 1423 K

1E-13

G (J)

6

1E-14

d = 3.5 nm, T = 1423 k

4 3 2 1

1E-15

0 0.0

0.2

0.4

0.6

0.8

f (θ) = 1

1E-17 1E-18

1.0

f (θ)

1E-16

1

2

3

4

5 6 D (nm)

7

8

9

10

FIGURE 21.6 Relationship curves of d and ΔG(d) of Dn graphitization at diferent Ta and a given heterogeneous factor. he inset shows the relationship between the heterogeneous factor and the critical energy of graphitization.

size-dependent stability of Dn and Gn expressed by the Ta–dD relationship and the critical condition for the formation of the stable and metastable phases of Dn could be predicted along with the calculation of dG* of the synthesis of Dn.

21.7 Summary and Prospects From the numerous studies outlined above, it is found that advances have been made in understanding the relative stability of sp2- and sp3-bonded carbon particles at the nanometer scale. hese studies have clearly identiied the two important size regimes, where sp2–sp3–sp2 phase transitions may be readily expected. In the case of larger particles, the crossover in stability between Dn and Gn may be expected at d = 5–10 nm, and for smaller particles, the crossover between Dn and F may be expected at d = 1.5–2 nm. hese results are supported by theory (the majority of which are thermodynamic arguments). hat is, the upper limit of Dn phase stability is d < 5–6 nm, while the lower one is d = 1.4–2.2 nm, along with the phase coexistence of Dn and F at this lower limit via the formation of B. Although Dn can be stable in this size range, Dn as a metastable phase may also exist outside of this range. Furthermore, the identiication of a coexistence region implies that (1) the phase transitions are not entirely driven by the volume thermodynamic amount and (2) other thermodynamic factors, such as γ, f, charge, and kinetic considerations, may also afect phase transitions. herefore, a complete examination of the phase stability of nanocarbon should include not only the use of a sophisticated computational method and large cluster sizes, but also theoretical terms to describe dependencies on a variety of experimentally relevant cluster properties. Nanocarbons are one of the most fantastical materials in the twenty-irst century. he corresponding research brings out not only much understanding in science, but also many industrial

applications. he deep understanding in science and the wide application in industry will certainly beneit our society. In the following, several present main research ields on nanocarbon are summarized. Moore’s law, a scaling rule of thumb turned into self-fuli lling prophecy, has dictated the exponential growth of the semiconductor industry over the last four decades (Moore 1965). To keep the law being valid in future development, carbon based electronics ofers one of the most promising options to replace Si. Great attention has been paid to carbon nanotubes due to their intriguing electronic properties (Iijima 1991, Chau et al. 2005, Lin et al. 2005). heir random orientation and spatial distribution, however, inhibit their introduction into the real applications where up to one billion devices need to be connected in a chip. Another potential solution could be graphene, a single layer of G, or an individual sheet of sp2-hybridized carbon bound in two dimensions. Ater the theoretical prediction of the peculiar electronic properties of graphene in 1947 by Wallace (1947) and the subsequent studies on its magnetic spectrum (McClure 1956), it took half a century until graphene could be manufactured experimentally (Novoselov et al. 2004) while the corresponding electronic properties have been measured only recently (Novoselov et al. 2005, Zhang et al. 2005). Graphene has excellent electronic properties, with carrier mobility between 3000 and 27,000 cm2/(V s) at Ta (Novoselov et al. 2004, Berger et al. 2006), being an extremely promising material for nanoelectronic devices. Since the graphene consists of a single layer graphite, its stability is similar to single wall U or O although graphene has no curvature on it. he corresponding thermal stability can be considered to be the same of O with minor error. he single-wall U (Liu et al. 1999, Chen et al. 2008, Wu et al. 2008), C60 (Sun et al. 2006, Chandrakumar and Ghosh 2008, Pupysheva et al. 2008), and graphene (Rojas and Leiva 2007) have emerged as potential candidates for hydrogen storage. For practical applications, a moderate binding strength in the range of −0.70 ≤ E ad ≤ −0.20 eV/H2 was suggested at Tr, where Ead is the adsorption energy between the H2 molecules and the storage media (Jhi 2006, Shevlin and Guo 2006). his presents a quandary since this requires enhancing the weak binding between the H2 and solid surfaces on one hand, which results from the strong H–H bond and the closed-shell electronic coniguration (Jhi and Kwon 2004). On the other hand, an excessively strong bond is not ideal either since ultimately both storage and desorption of H2 are necessary (Sun et al. 2006). H2 is either chemisorbed in atomic form or physisorbed in molecular form. he storage abilities of the nanocarbon can be largely improved via metal doping due to the enhanced charge transfer from metal to carbon. Noteworthy, although the alkali (Chen et al. 1999a,b, 2008, Sun et al. 2006, Wu et al. 2008) and transition metals (Yildirim and Ciraci 2005, Shevlin and Guo 2006, Rojas and Leiva 2007) are oten utilized as dopants, a recent work predicted that Ca is the most attractive metal for functionalizing F (Yoon et al. 2008). F, U, and Dn appear also to be valuable resources for biomedical applications (Frietas 1999, 2003). It was demonstrated that

Thermodynamic Phase Stabilities of Nanocarbon

F compounds have biological activity, and their potential as therapeutic products for the treatment of several diseases has been reported. At d = 0.72 nm, C60 is similar in size to steroid hormones or peptide α-helices, and thus F compounds are ideal molecules to serve as ligands for enzymes and receptors (Wilson 2000). he exploration of bucky tubes in biomedical applications is also underway. In addition, U has been used for immobilization of proteins, enzymes, and oligonucleotides (Wilson 2000).

Acknowledgments National Key Basic Research and Development Program (Grant No. 2004CB619301), and “985 Project” of Jilin University are acknowledged.

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Butenko, Yu. V., Kuznetsov, V. L., Chuvilin, A. L., Kolomiichuk V. N. 2000. Kinetics of the graphitization of dispersed diamonds at “low” temperatures. J. Appl. Phys. 88: 4380–4388. Butler, J. E., Sumant, A. V. 2008. he CVD of nanodiamond materials. Chem. Vap. Depos. 14: 145–160. Chandrakumar, K. R. S., Ghosh, S. K. 2008. Alkali-metal-induced enhancement of hydrogen adsorption in C-60 fullerene: An ab initio study. Nano Lett. 8: 13–19. Chau, R., Datta, S., Doczy, M. et al. 2005. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE T. Nanotechnol. 4: 153–158. Chen, J., Deng, S. Z., Chen, J., Yu, Z. X., Xu, N. S. 1999a. Graphitization of nanodiamond powder annealed in argon ambient. Appl. Phys. Lett. 74: 3651–3653. Chen, P., Wu, X., Lin, J., Tan, K. L. 1999b. High H2 uptake by alkali-doped carbon nanotubes under ambient pressure and moderate temperatures. Science 285: 91–93. Chen, L., Zhang, Y., Koratkar, N., Jena, P., Nayak, S. K. 2008. Firstprinciples study of interaction of molecular hydrogen with Li-doped carbon nanotube peapod structures. Phys. Rev. B 77: 033405. Clark, S. M., Prilliman, S. G., Erdonmez, C. K., Alivisatos, A. P. 2005. Size dependence of the pressure-induced gamma to alpha structural phase transition in iron oxide nanocrystals. Nanotechonology 16: 2813–2818. (References therein). Dash, J. G. 1999. History of the search for continuous melting. Rev. Mod. Phys. 71: 1737–1743. Fedoseev, D. V., Deryagin, B. V., Varshavskayu, I. G. 1989. he crystallization of diamond. Surf. Coat. Tech. 38: 1–122. Frietas, R. A. 1999. Nanomedicine, Vol. I: Basic Capabilities. Georgetown, TX: Landes Bioscience. Available: http://www. nanomedicine.com. Frietas, R. A. 2003. Nanomedicine, Vol. IIA: Biocompatibility. Georgetown, TX: Landes Bioscience. Available: http://www. nanomedicine.com Galli, G., Martin, R. M., Carr, R., Parrinello, M. 1989. Structural and electronic properties of amorphous carbon. Phys. Rev. Lett. 62: 555–558. Gamarnik, M. Y. 1996a. Energetical preference of diamond nanoparticles. Phys. Rev. B 54: 2150–2156. Gamarnik, M. Y. 1996b. Size-related stabilization of diamond nanoparticles. Nanostruct. Mater. 7: 651–658. Gibbs, J. W. 1878. On the equilibrium of heterogeneous substances. Trans. Conn. Acad. 3: 343–524. Gleiter, H. 2000. Nanostructured materials: Basic concepts and microstructure. Acta Mater. 48: 1–29. Glosli, J. N., Ree, F. H. 1999. Liquid-liquid phase transformation in carbon. Phys. Rev. Lett. 82: 4659–4662. Grumback, M. P., Martin, R. M. 1996. Phase diagram of carbon at high pressure: Analogy to silicon. Solid State Commun. 100: 61–65. Gust, W. H. 1980. Phase transition and shock-compression parameters to 120 GPa for three types of graphite and for amorphous carbon. Phys. Rev. B 22: 4744–4756.

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Hill, T. L. 2001. A diferent approach to nanothermodynamics. Nano Lett. 1: 273–275. Holzapfel, W. B. 1997. In: High Pressure Techniques in Chemistry and Physics, ed. Holzapfel, W. B. and Isaacs, N., p. 47. Oxford, U.K.: Oxford University Press. Hwang, N. M., Hahn, J. H., Yoon, D. Y. 1996a. Chemical potential of carbon in the low pressure synthesis of diamond. J. Cryst. Growth 160: 87–97. Hwang, N. M., Hahn, J. H., Yoon, D. Y. 1996b. Charged cluster model in the low pressure synthesis of diamond. J. Cryst. Growth 162: 55–68. Iijima, S. 1991. Helical microtubules of graphitic carbon. Nature 354: 56–58 Jhi, S. H. 2006. Activated boron nitride nanotubes: A potential material for room-temperature hydrogen storage. Phys. Rev. B 74: 155424. Jhi, S. H., Kwon, Y. K. 2004. Hydrogen adsorption on boron nitride nanotubes: A path to room-temperature hydrogen storage. Phys. Rev. B 69: 245407. Jiang, Q., Chen, Z. P. 2006. hermodynamic phase stabilities of nano-carbon. Carbon 44: 79–83. Jiang, Q., Lu, H. M. 2008. Size dependent interface energy and its applications. Surf. Sci. Rep. 63: 427–464. Jiang, Q., Yang, C. C. 2008. Size efect on phase stability of nanostructures. Curr. Nanosci. 4: 179–200. Jiang, Q., Li, J. C., Wilde, G. 2000. he size dependence of the diamond-graphite transition. J. Phys.: Condens. Matter 12: 5623–5627. Korobenko, V. N. 2001. Experimental investigation of liquid metals and carbon properties under high temperatures, PhD thesis, Associated Institute for High Temperatures of the Russian Academy of Sciences, Moscow, Russia. Korobenko, V. N., Savvatimskiy, A. I. 2003. Blackbody design for high temperature (1800 to 5500 K) of metals and carbon in liquid states under fast heating, In: Temperature: Its Measurement and Control in Science and Industry, Conference Proceedings, ed. Ripple, D. C., Vol. 7, pp. 783–788. Melville, NY: American Institute of Physics. Kwon, S. J., Park, J. G. 2007. heoretical analysis of the graphitization of a nanodiamond. J. Phys.: Condens. Matter 19: 386215. Lin, Y. M., Appenzeller, J., Chen, Z. H., Chen, Z. G., Cheng, H. M., Avouris, P. 2005. High-performance dual-gate carbon nanotube FETs with 40-nm gate length. IEEE Electron Device Lett. 26: 823–825. Liu, C., Fan, Y. Y., Liu, M., Cong, H. T., Cheng, H. M., Dresselhaus, M. S. 1999. Hydrogen storage in single-walled carbon nanotubes at room temperature. Science 286: 1127–1129. Lu, K. 1996. Nanocrystalline metals crystallized from amorphous solids: Nanocrystallization, structure, and properties. Mater. Sci. Eng. R. 16: 161–221. McClure, J. W. 1956. Diamagnetism of graphite. Phys. Rev. 104: 666–671. Moore, G. E. 1965. Cramming more components onto integrated circuits. Electronics 38: 114–117

Handbook of Nanophysics: Principles and Methods

Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., Firsov, A. A. 2004. Electric ield efect in atomically thin carbon ilms. Science 306: 666–669. Novoselov, K. S., Geim, A. K., Morozov, S. V. et al. 2005. Twodimensional gas of massless Dirac fermions in graphene. Nature 438: 197–200. Osipov, Yu. V., Enoki, T., Takai, K., Takahara, K., Endo, M., Hayashi, T., Hishiyama, Y., Kaburagi, Y., Vul, A. Y. 2006. Magnetic and high resolution TEM studies of nanographite derived from nanodiamond. Carbon 44: 1225–1234. Park, N., Lee, K., Han, S. W., Yu, J. J., Ihm, J. 2002. Energetics of large carbon clusters: Crossover from fullerenes to nanotubes. Phys. Rev. B 65: 121405. Pupysheva, O. V., Farajian, A. A., Yakobson, B. I. 2008. Fullerene nanocage capacity for hydrogen storage. Nano Lett. 8: 767–774. Raty, J. Y., Galli, G. 2003. Ultradispersity of diamond at the nanoscale. Nat. Mater. 2: 792–795. Raty, J. Y., Calli, G., Bostedt, C., Van Buuren, T. W., Terminello, L. J. 2003. Quantum coninement and fullerene like surface reconstructions in nanodiamonds. Phys. Rev. Lett. 90: 37401. Ree, F. H., Winter, N. W., Glosli, J. N., Viecelli, J. A. 1999. Kinetics and thermodynamic behavior of carbon clusters under high pressure and high temperature. Physica B 265: 223–229. Robertson, D. H., Brenner, D. W., Mintmire, J. W. 1992. Energetics of nanoscale graphitic tubules. Phys. Rev. B 45: 12592–12595. Rojas, M. I., Leiva, E. P. M. 2007. Density functional theory study of a graphene sheet modiied with titanium in contact with diferent adsorbates. Phys. Rev. B 76: 155415. Rusanov, A. I. 1996. hermodynamics of solid surfaces. Surf. Sci. R. 23: 173–247. Savvatimskii, A. I. 2003. Melting point of graphite and liquid carbon—(Concerning the paper “Experimental investigation of the thermal properties of carbon at high temperatures and moderate pressures” by Asinovskii, E. I., Kirillin, A. V., and Kostanovskii, A. V.). Phys. Usp. 46: 1295–1303. Savvatimskiy, A. I. 2005. Measurements of the melting point of graphite and the properties of liquid carbon (a review for 1963–2003). Carbon 43: 1115–1142. Shenderova, O. A., Zhirnov, V. V., Brenner, D. W. 2002. Carbon nanostructures. Crit. Rev. Solid State Mater. Sci. 27: 227–356. Shevlin, S. A., Guo, Z. X. 2006. Transition-metal-doping-enhanced hydrogen storage in boron nitride systems. Appl. Phys. Lett. 89: 153104. Sun, Q., Jena, P., Wang, Q., Marquez, M. 2006. First-principles study of hydrogen storage on Li12C60. J. Am. Chem. Soc. 128: 9741–9745. Tomanek, D., Schluter, M. A. 1991. Growth regimes of carbon clusters. Phys. Rev. Lett. 67: 2331–2335. Tse, J. S., Holzapfel, W. B. 2008. Equation of state for diamond in wide ranges of pressure and temperature. J. Appl. Phys. 104: 043525.

Thermodynamic Phase Stabilities of Nanocarbon

Van hiel, M., Ree, F. H. 1993. High-pressure liquid-liquid phase change in carbon Phys. Rev. B 48: 3591–3599. Verechshagin, A. L. 2002. Phase diagram of ultraine carbon. Combust. Exp. Shock Waves 38: 358–359. Viecelli, J. A., Ree, F. H. 2000. Carbon particle phase transformation kinetics in detonation waves. J. Appl. Phys. 88: 683–690. Viecelli, J. A., Bastea, S., Glosli, J. N., Ree, F. H. 2001. Phase transformations of nanometer size carbon particles in shocked hydrocarbons and explosives. J. Chem. Phys. 115: 2730–2736. Wallace, P. R. 1947. he band theory of graphite. Phys. Rev. 71: 622–634. Wang, C. X., Yang, G. W. 2005. hermodynamics of metastable phase nucleation at the nanoscale. Mater. Sci. Eng. R. 49: 157–202. Wang, C. X., Yang, Y. H., Xu, N. S., Yang, G. W. 2004. hermodynamics of diamond nucleation on the nanoscale. J. Am. Chem. Soc. 126: 11303–11306. Wang, C. X., Chen, J., Yang, G. W., Xu, N. S. 2005. hermodynamic stability and ultrasmall-size efect of nanodiamonds. Angew. Chem. Int. Ed. 44: 7414–7418. Wilson, S. R. 2000. Biological aspects of fullerenes. In: Fullerenes: Chemistry, Physics, and Technology, ed. Kadish, K. M. and Ruof, R. S., pp. 437–466. New York: John Wiley & Sons.

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Winter, N., Ree, F. H. 1998. Carbon particle phase stability as a function of size. J. Comput.-Aided Mater. Des. 5: 279–294. Wu, X. J., Gao, Y., Zeng, X. C. 2008. Hydrogen storage in pillared Li-dispersed boron carbide nanotubes. J. Phys. Chem. C 112: 8458–8463. Yang, C. C., Li, S. 2008. Size-dependent temperature-pressure phase diagram of carbon. J. Phys. Chem. C 112: 1423–1426. Yildirim, T., Ciraci, S. 2005. Titanium-decorated carbon nanotubes as a potential high-capacity hydrogen storage medium. Phys. Rev. Lett. 94: 175501. Yoon, M., Yang, S. Y., Hicke, C., Wang, E., Geohegan, D., Zhang, Z. Y. 2008. Calcium as the superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage. Phys. Rev. Lett. 100: 206806. Young, D. A. 1991. Phase Diagrams of the Elements. Berkeley, CA: University of California Press. Zaiser, M., Lyutovich, Y., Banhart, F. 2000. Irradiation-induced transformation of graphite to diamond: A quantitative study. Phys. Rev. B 62: 3058–3064. Zhang, Y., Tan, Y. W., Stormer, H. L., Kim, P. 2005. Experimental observation of the quantum hall efect and Berry’s phase in graphene. Nature 438: 201–204. Zhao, D. S., Zhao, M., Jiang, Q. 2002. Size and temperature dependence of nanodiamond–nanographite transition related with surface stress. Diam. Relat. Mater. 11: 234–236.

IV Nanomechanics 22 Computational Nanomechanics Wing Kam Liu, Eduard G. Karpov, and Yaling Liu...............................................22-1 Introduction • Classical Molecular Dynamics • Introduction to Multiple Scale Modeling • Manipulation of Nanoparticles and Biomolecules • Conclusion • Acknowledgments and Copyright • References

23 Nanomechanical Properties of the Elements Nicola M. Pugno..................................................................................23-1 Introduction • Nonlinear Normal Stress–Strain Law • Cohesion Energies • Young’s Modulus and Coeicient of hermal Expansion Correlation • Nonlinear Shear Stress–Strain Law • Nanomechanical Properties of the Elements • Comparison with the Literature • Nanomechanics Is the Borderline between Classical and Quantum Mechanics • Periodic Table for the Nanomechanical Properties of Elements • Example of Application: Nonlinear Elasticity and Strength of Graphene • Model Limitations • Conclusions • References

24 Mechanical Models for Nanomaterials Igor A. Guz, Jeremiah J. Rushchitsky, and Alexander N. Guz.................. 24-1 Introduction • Length Scales in Mechanics of Materials • New Type of Reinforcement—“he Bristled Nanocentipedes” • Discussion • Conclusions • Acknowledgments • References

IV-1

22 Computational Nanomechanics 22.1 Introduction ...........................................................................................................................22-1 22.2 Classical Molecular Dynamics ............................................................................................22-2 Mechanics of a System of Particles • Molecular Forces • Numerical Heat Bath Techniques • Molecular Dynamics Applications

22.3 Introduction to Multiple Scale Modeling ........................................................................22-17

Wing Kam Liu Northwestern University

Eduard G. Karpov University of Illinois at Chicago

Yaling Liu University of Texas at Arlington

MAAD • Coarse-Grained Molecular Dynamics • Quasicontinuum Method • CADD • Bridging Scale Method • Predictive Multiresolution Continuum Method

22.4 Manipulation of Nanoparticles and Biomolecules .........................................................22-26 Introduction • Electrohydrodynamic Coupling • Nanostructure Assembly Driven by Electric Field and Fluid Flow • Ion and Liquid Transportation in Nanochannels

22.5 Conclusion ............................................................................................................................22-39 Acknowledgments and Copyright ................................................................................................22-39 References.........................................................................................................................................22-39

22.1 Introduction Over the past three decades, we have acquired new tools and techniques to synthesize nanoscale objects and to learn their many incredible properties. he high-resolution electron microscopes that are available today allow the visualization of single atoms; furthermore, the manipulation of these individual atoms is possible using scanning probe techniques. Advanced materials synthesis provides the technology to tailor-design systems from as small as molecules to structures as large as the fuselage of a plane. We now have the technology to detect single molecules, bacteria, or virus particles. We can make protective coatings more wear-resistant than diamond and fabricate alloys and composites stronger than ever before. Advances in the synthesis of nanoscale materials have stimulated ever-broader research activities in science and engineering devoted entirely to these materials and their applications. h is is due in large part to the combination of their expected structural perfection, small size, low density, high stif ness, high strength, and excellent electronic properties. As a result, nanostructured materials may ind use in a wide range of applications in material reinforcement, ield emission panel display, chemical sensing, drug delivery, nanoelectronics, and tailor-designed materials. Nanoscale devices have great potential as sensors and as medical diagnostic and delivery systems. While microscale and nanoscale systems and processes are becoming more viable for engineering applications, our knowledge of their behavior and our ability to model their performance remain limited. Continuum-based computational

capabilities are obviously not applicable over the full range of operational conditions of these devices. Non-continuum behavior is observed in large deformation behavior of nanotubes, ion deposition processes, gas dynamic transport, and material mechanics as characteristic scales drop toward the micron scale. At the scales of nanodevices, interactions between thermal efects and mechanical response can become increasingly important. Furthermore, nanoscale components will be used in conjunction with components that are larger and respond at diferent timescales. In such hybrid systems, the interaction of diferent time and length scales may play a crucial role in the performance of the complete system. Single scale methods such as ab initio methods or molecular dynamics (MD) would have diiculty in analyzing such hybrid structures due to the large range of time and length scales. For the design and study of nanoscale materials and devices in microscale systems, models must span length scales from nanometers to hundreds of microns. Computational power has doubled approximately every 18 months in accordance with Moore’s law. Despite this fact and the fact that desktop computers can now routinely simulate million atom systems, simulations of realistic atomic system require at least tens of billions of atoms. In short, such systems can be modeled neither by continuum methods because they are too small nor by molecular methods because they are too large and, therefore, require usage of multiscale methods. Multiple scale methods generally imply the utilization of information at one length scale to model the response of the material at subsequently larger length scales. hese methods can be divided into two categories: hierarchical and concurrent. 22-1

22-2

Hierarchical multiple scale methods directly utilize the information at a small length scale as an input into a larger model via some type of averaging process. he Young’s modulus is a good example of this; the structural material stifness is found as a single quantity, through homogenization of all defects and microstructure at the micro and nanoscales. Concurrent multiple scale methods are those which run simultaneously; in these methods, the information at the smaller length scale is calculated and input to the larger scale model on the ly. In this chapter, we shall concentrate on the development of concurrent multiple scale methods, much of which has occurred within the past decade. We note in particular the work of Li and Liu (2004), as well as two excellent review papers that comprehensively cover the ield, those of Liu et al. (2004a), and Curtin and Miller (2003). he material presented in this chapter informs researchers and educators about speciic fundamental concepts and tools in nanomechanics and materials, including solids and luids, and their modeling via multiple scale methods and techniques. In recognizing the importance of engineering education, the material presented in this chapter is correlated with several newly developed courses taught by the authors at Northwestern University and University of Illinois, including multiscale simulations, molecular modeling, and principles of nanomechanics. Furthermore, this material was utilized as a basis for the interdisciplinary NSF-sponsored Summer Institute on Nano Mechanics and Materials, www.tam.northwestern.edu/ summerinstitute/Home.htm, which has been held at Northwestern University during years 2004–2009. his chapter, therefore, can serve as a starting point to the researchers willing to contribute to the emerging ield of computational nanomechanics.

22.2 Classical Molecular Dynamics his section is devoted to the methods of classical mechanics that allow studying the motion of gas, liquid, and solid particles as a system of interactive, dimensionless mass points. he classical dynamic equations of motion are valid for slow and heavy particles, with typical velocities v > m e , m e being the electron mass. herefore, only slow motion (not faster than thermal vibrations) of atoms, ions, and molecules can be considered, and the internal electronic structure is ignored. he atoms and molecules exert internal forces on each other that are determined by instantaneous values of the total potential energy of the system. he potential energy is typically considered only as a function of the system spatial coniguration and is described by means of interatomic potentials. hese potentials are considered as known input information; they are either found experimentally, or computed by averaging over the motion of the valence electrons in the ion’s Coulomb ield by means of quantum ab initio methods. During the course of the system’s dynamics, the interatomic potentials are not perturbed by possible changes in the internal electronic states of the simulated particles.

Handbook of Nanophysics: Principles and Methods

Analytical solutions of the equations of particle dynamics are possible only for a limited set of interesting problems, and only for systems with a small number of degrees of freedom. Numerical methods of solving the classical equations of motion for multiparticle systems with known interatomic potentials are collectively referred to as molecular dynamics. MD is regarded as a major practical application of the classical particle dynamics. he subsequent computer postprocessing and visualization of the results accomplished in a dynamic manner are called the MD simulation.

22.2.1 Mechanics of a System of Particles Classical dynamics studies the motion of mass points (ideal dimensionless particles) due to known forces exerted on them. hese forces serve as qualitative characteristics of the interaction of particles with each other (internal forces) and with exterior bodies (external forces). he general task of dynamics consists of solving for the positions (trajectories) of all particles in a given mechanical system over the course of time. In principle, such a solution is uniquely determined by a set of initial conditions, i.e., positions and velocities of all particles at time t = 0, and the interaction forces. If there are no external forces applied to the system, then this system is isolated or closed, otherwise it is called non-isolated. 22.2.1.1 Generalized Coordinates he spatial coniguration of N dimensionless particles can be determined by N radius vectors r1, r 2 , …, r N, or by 3N coordinates (Cartesian x i , y i , zi , spherical r i , θi , ϕi , etc.). In some cases, the motion of these particles is constrained in a speciic manner, i.e., under given provisos, it cannot be absolutely arbitrary. hen we say that such a system has mechanical constraints, and the system itself is called constrained; otherwise the system is called non-constrained. If some mechanical constraint can be expressed as a function of the coordinates of the particles, f (r1 , r2 …, rN ) = 0

(22.1)

we call them holonomic, otherwise non-holonomic. Example systems with holonomic constraints are a pendulum in the ield of gravity, as well as diatomic and polyatomic gas molecules with rigid interatomic bonding. In the presence of k holonomic constraints of the type (22.1), there exist only s = 3N − k independent coordinates. Any s independent variables q1, q2, …, qs (lengths, angles, etc.) that fully determine the spatial coniguration of the system are referred to as the generalized coordinates, and their time derivatives q·1, q·2, …, q·s – generalized velocities. he relationship between the radius vectors and the generalized coordinates can be expressed by the transformation equations ri = ri (q1 , q2 , …, qs ), i = 1, 2, …, N

(22.2)

22-3

Computational Nanomechanics

that provide parametric representations of the old coordinates ri in terms of the new coordinates qi . he corresponding velocities are given by vi = rɺ i =

∂ri + ∂t

s

∂ri

∑ ∂q qɺ , j =1

i

i = 1, 2, …, N

(22.3)

i

miɺɺri = −∇iU + Fi , i = 1, 2, …, N

(22.6)

where the nabla operator is such as in Equation 22.5 U is the potential energy function (22.4) Fi is the nonconservative or external force on the ith particle

he transformations are assumed to be invertible, i.e., the Equations 22.2 combined with the constraint rules (22.1) can be inverted to obtain the generalized coordinates as functions of the radius vectors.

he Newtonian equations are also applicable to a system of polyatomic molecules, provided that these molecules can be approximated as structureless mass points.

22.2.1.2 Mechanical Forces and Potential Energy

For a nonconservative system, the right-hand side of the Equation 22.6 will include also all the available nonconservative forces. One typical example is the dissipative system, where the damping force exerted on a particle is proportional to its instantaneous velocity with the opposite sign:

Besides being classiied as internal or external, all mechanical forces in a system of particles can be classiied as conservative or nonconservative. Conservative forces are those whose work depends only on positions of the particles, without regard for their instantaneous velocities and trajectories of passage between these positions. All other forces are called nonconservative. hey comprise two major types: dissipative and gyroscopic. Forces of mechanical friction and viscous friction in gases and liquids are dissipative. Current magnitudes and directions of dissipative forces may depend on instantaneous velocities, and/or a time history of the atomic motion in the system. he work of these forces in a closed system is always negative, including the case of looped trajectories. Gyroscopic forces depend on instantaneous velocities of particles and act in directions that are orthogonal to these velocities. he work of these forces is always trivial over the course of motion of the particles. Examples of gyroscopic forces are the Coriolis force, felt by mass particles moving in a rotating coordinate system inwards or outwards from the axis of rotation, as well as the Lorentz force felt by charged particles moving in a magnetic ield. For a system characterized by only conservative forces, there exists a speciic function of coordinates of the particles U = U (r1 , r2 , …, rN )

(22.4)

called the potential energy, or simply the potential, of the system. At the same time, partial derivatives of U with respect to the coordinates of a particle i yield the corresponding components of the resultant force felt by this particle due to the potential U:

22.2.1.3.1 Dissipative Equations

miɺɺri = −∇iU − mi γ i rɺi ,

i = 1, 2, …, N

(22.7)

and γ is the damping constant. he damping force FiS = −mi γ i rɺi

(22.8)

is also called the viscous, or Stokes’ friction, because it is similar to decelerating forces exerted on a solid particle moving in a liquid solvent. his model can be updated with a stochastic external force Ri that represents thermal collisions of the system particle i with the hypothetical solvent molecules: miɺɺri = −∇iU − mi γ i rɺi + R i (t ),

i = 1, 2, …, N

(22.9)

Assuming that interactions/collisions between the particle i and the solvent molecules are frequent and fast, i.e., the magnitude of the random force R varies over much shorter timescales than the timescale over which the particle’s position and velocity change, Equation 22.9 is said to represent Brownian motion of the particle i. Furthermore, if the stochastic force satisies the following relationships t

1 R(τ)dτ = 0 t →∞ t

(22.10)

1 R i (τ) ⋅ R i ′ (t 0 + τ)dτ = aδ(t 0 )δ ii ′ t →∞ t

(22.11)

lim

∫ 0

fi = −

⎛ ∂ dU ∂ ∂ ⎞ = −⎜ + + U ≡ −∇iU , i = 1, 2, …, N dri ⎝ ∂xi ∂yi ∂zi ⎟⎠ (22.5)

22.2.1.3 Newtonian Equations For a system of N interacting monoatomic molecules, treated as individual mass points, there are no holonomic constraints, and the generalized coordinates can be chosen equivalent to the Cartesian coordinates. he equation of motion of such a system can be written in the Newtonian form, e.g., Goldstein (1980),

t

lim

∫ 0

where a is a constant δ(t0) and δii′ are the Dirac and Kronecker deltas, respectively Equation 22.9 is oten called the Langevin equation, and the particle i is referred to as a Langevin particle.

22-4

Handbook of Nanophysics: Principles and Methods

22.2.1.3.2 Generalized Langevin Equation he relationship (22.10) implies that there is no directional preference for the stochastic force in the Langevin model. An integral of the type (22.11) is called the autocorrelation function of a continuous function R. he Dirac delta autocorrelation (22.11) implies that the function R does not represent any time history, so that the current value of R is not afected by behavior of this function at preceding times. he Kronecker delta in (22.11) means that the force exerted on the particle i is uncorrelated with the force exerted on another particles i′. A more general form of the Equation 22.9, which is used in application to solids, gas/solid and solid–solid interfaces, is given by

simulations, the classical interatomic potentials should accurately account for the quantum efects, even in an averaged sense. Typically, the function U is obtained from experimental observations, as well as from the quantum-scale modeling and simulation, e.g., La Paglia (1971), Mueller (2001), Ratner and Schatz (2001). he issues related to the form of the potential function for particular types of atomic systems have been extensively discussed in the literature. he general structure of this function can be presented as U (r1 , r2 ,…, rN ) =

∑V (r ) + ∑V (r , r ) + ∑ V (r , r , r ) + ⋯ 1

2

i

i

i, j >i

i

3

j

∑∫β i′

ii ′

(t − τ)rɺi ′ (τ) + Ri (t ), i = 1, 2,…, N

0

(22.12) Here, the second term on the right-hand side represents a dissipative damping force that depends on the entire time history of velocities of the current atom i and a group of neighboring atoms i′; the matrix β is called the time-history damping kernel. his damping force can be alternatively deined in terms of the history of atomic positions, rather than velocities: t

miɺɺri (t ) = −∇iU −

∑∫θ i′

j

k

(22.14)

t

miɺɺri (t ) = −∇iU −

i

i, j >i,k > j

ii ′

(t − τ)ri ′ (τ) + R i (t ), i = 1, 2,…, N

0

(22.13)

where r’s are radius vectors of the particles, and the function Vm is called the m-body potential. he irst term represents the energy due to an external force ield, such as gravity or electrostatic, which the system is immersed into, or bounding ields such as potential barriers and wells. he second term shows potential energy of pair-wise interaction of the particles; the third gives the three-body components, etc. Respectively, the function V1 is also called the external potential, V2 is the interatomic (pairwise), and Vm at m > 2 is a multi-body potential. In order to reduce the computational expense of numerical simulations, it is practical to truncate the sum (22.14) ater the second term and incorporate all the multi-body efects into V2 with some appropriate degree of accuracy; this approach is further discussed in Section 22.2.2.2. 22.2.2.1 External Fields

where θ is a new damping kernel. Newtonian equations of the type (22.12), or (22.13), are oten called the generalized Langevin equations, e.g., Adelman and Doll (1976), Adelman and Garrison (1976), Karpov et al. (2005). One application of these equations is related to the motion of individual atoms in a large crystal lattice subjected to external pulse excitations. We consider this application in greater detail in Section 22.3.5.

22.2.2 Molecular Forces As discussed in Section 22.2.1 the general forms of the governing equation of particle dynamics are given by straightforward second-order ordinary diferential equations, which allow a variety of numerical solution techniques. Meanwhile, the potential function U for Equation 22.6 can be an extremely complicated object, when the accurate representation of the atomic interactions within the system under consideration is required. he nature of these interactions is due to complicated quantum efects taking place at the subatomic level that are responsible for chemical properties such as valence and bond energy. he efects are also responsible for the spatial arrangement (topology) of the interatomic bonds, their formation, and breakage. In order to obtain reliable results in MD computer

he efect of external ields for a particle i can be generally described as V1 = V1(ri )

(22.15)

where V1 is a function of the radius vectors of this particle. hus, the instantaneous force exerted on this particle due to V1 depends only on the spatial location of this particular particle, and it is independent of the positions of any other particles in the system. Simple examples include the uniform ield of gravity: VG (r) = VG ( y ) = mgx

(22.16)

where x is the component of the radius vector, orthogonal to the Earth’s surface; the ield of a one-dimensional (1D) harmonic oscillator, Vh (x ) = kx 2

(22.17)

and a spherical oscillator, Vh (r ) = kr 2 ,

r2 = x2 + y2 + z2

(22.18)

22-5

Computational Nanomechanics

External bounding ields and potential barriers give further examples of the one-body interaction. A 1D potential well can be expressed by VW (x ) = −ΔEe

−

( x − x0 )s 2 Rs

(22.19)

and a two-sided potential barrier, VB (x ) = −VW (x )

(22.20)

where x0, 2R, s, and ΔE are the coordinate of the center, width, steepness, and total depth/height of the well/barrier, respectively. he steepness s is an even integer, and the width 2R corresponds to VW = ΔEe−1/2. By manipulating these functions, one can also obtain 2D, 3D, cylindrical, and ellipsoid shapes. In case ΔE is increasingly large compared with the average kinetic energy of particles, a function similar to VW is also called a wall function that models a system of particles inside a vessel with impenetrable walls. In general, potential wells and barriers are introduced to conine the spatial domain occupied by a inite system of atoms and molecules in gaseous or liquid phase.

charge is related to the property of particles to exert forces on each other by means of electric ields. he standard SI unit of electric charge is 1 coulomb, [e] = 1 C. The electric charge of a particle is always quantized, occurring as a multiple of the elementary charge, e 0 = 1.602177 · 10−19 C. An electron, proton, and neutron, the atomic components, have the charges −e 0, e 0, and 0, respectively. he charge of an atomic nucleus, comprised by protons and neutrons, is Ze 0, where Z is the number of protons. An atomic ion can have a charge (Z − Ne)e 0, where Ne is the number of available electrons. As a result, classical particle dynamics deals with positively and negatively charged atomic and molecular ions, as well as with electrically neutral particles (e = 0). A pair of particles bearing electric charges e1 and e2 exert on each other repulsive (at e1/e2 > 0), or attractive (at e1/e2 < 0) forces, described by F1 = −F2 = −∇iVC (r1 , r2 ), i = 1, 2

(22.22)

where r1 and r2 are radius vectors of the particles, and

22.2.2.2 Pair-Wise Interaction he pair-wise function V2 describes the dependence of the total potential energy U on the interparticle distances. Letting ri and rj be radius vectors of two arbitrary particles in the system, we can generally write V2 (ri , rj ) = V2 (r ), r = | rij | = | ri − rj |

(22.21)

Such a function serves as an addition to V1, formula (22.15), which only describes separate dependence of U on the radius vectors ri and rj. Pair-wise coordination of particles is depicted in Figure 22.1. here are two major types of pair-wise interactions: longrange electrostatic interactions and short-range interactions between electrically neutral particles. 22.2.2.2.1 Long-Range Coulomb Interaction One basic physical characteristic of atoms, molecules, and their elementary components is the electric charge, e. Electric

VC (r1 , r2 ) = VC (r ) =

(22.23)

is the electrostatic Coulomb potential; ϵ0 = 8.854188 · 10−12 C/(Vm) is the permittivity constant in a vacuum. Equations 22.22 and 22.23 account for the convention where attractive forces are deined as negative, and repulsive forces as positive. he absolute value of the interaction force (Equation 22.22) can be expressed as a function of the separation distance:

FC (r ) = −

∂V (r ) 1 e1e2 = ∂r 4π⑀0 r 2

(22.24)

For a system of N charged particles, the pair-wise interaction energy is written as UC =

z

1 e1e2 , r = r12 = r2 − r1 4 π⑀0 r

∑V (r ), C

ij

rij = rij = rj − ri

(22.25)

i, j >i

j rij i

rj ri

x

FIGURE 22.1

where VC is the Coulomb potential (22.23) rij is the separation distance for a pair of particles i and j, see Figure 22.1

Pair-wise coordination of particles.

y

he relevant interaction forces can be computed according to the general formula (22.5). he Coulomb interaction is of greatest magnitude at large separations distances, because the potential (22.23) decays slowly with the growth of r. For this reason, it is called a longrange interaction.

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Handbook of Nanophysics: Principles and Methods

22.2.2.2.2 Short-Range Interaction For a pair of electrically neutral atoms or molecules, the electrostatic ield of the positively charged atomic nuclei or ion is neutralized by the negatively charged electron clouds surrounding the nuclei. Quantum mechanical descriptions of the electron motion involves a probabilistic framework to evaluate the probability densities at which the electrons can occupy particular spatial locations; in other words, quantum mechanics provides probability densities in the coniguration space of electrons, e.g., La Paglia (1971), Ratner and Schatz (2001). he term “electron cloud” is typically used in relation to the spatial distributions of these densities. he negatively charged electron clouds, however, experience cross-atomic attraction, which grows as the distance between the nuclei decreases. On reaching some particular distance, which is referred to as the equilibrium (bond) length, this attraction is equilibrated by the repulsive force due to the positively charged atomic nuclei or ions. A further decrease in the interparticle distance results in a quick growth of the resultant repulsive force. he potential energy of such a system will be a continuous function of the separation distance, provided that internal quantum states of the electron cloud are not excited. Alternatively, these quantum states are excited and consequently relaxed at timescales that are signiicantly faster than the characteristic time of the ions’ thermal motion. hen the “heavy” and “slow” (in the quantum sense) nuclei or ions can be considered as a classical system of particles, interacting through a time-independent potential, averaged over the electronic degrees of freedom. here exist a number of mathematical models to adequately describe the dual attractive/repulsive character of interactions between a pair of neutral atoms or molecules. In 1924, Jones (1924a,b) proposed the following potential: ⎛ σ12 σ6 ⎞ VLJ (r ) = 4ε ⎜ 12 − 6 ⎟ r ⎠ ⎝r

(22.26)

his model is currently known as the Lennard-Jones (LJ) potential, and it is used in computer simulations of a great variety of nanoscale systems and processes. Here, σ is the collision diameter, the distance at which VLJ = 0, and ε is the dislocation energy. In a typical atomistic system, the collision diameter is equal to several angstroms (Å), 1 Å = 10−10 m. he value ε corresponds to the minimum of function (22.26), which occurs at the equilibrium bond length ρ = 21/6σ; VLJ(ρ) = −ε. Physically, ε represents the amount of work that needs to be done in order to move the interacting particles apart from the equilibrium distance ρ to ininity. he availability of a minimum in the LJ potential represents the possibility of bonding for two colliding particles, provided that their relative kinetic energy is less than ε. he irst term of the LJ potential represents atomic repulsion, dominating at small separation distances while the second term shows attraction (bonding) between two atoms or molecules. Since the bracket quantity is dimensionless, the choice of units for V depends on the deinition of ε. Typically, ε ~10−19–10−18 J,

therefore it is more convenient to use a smaller energy unit, such as the electron volt (eV), 1 eV = 1.602 × 10−19 J

(22.27)

rather than joules. One electron volt represents the work done if an elementary charge is accelerated by an electrostatic ield of a unit voltage. his is a typical atomic-scale unit; therefore, it is oten used in computational nanomechanics and materials. he absolute value of the LJ interaction force, as a function of the interparticle distance, gives ⎛ 2σ12 σ6 ⎞ FLJ (r ) = 24ε ⎜ 13 − 7 ⎟ r ⎠ ⎝ r

(22.28)

he potential (22.26) and force (22.28) functions are plotted in Figure 22.2a in terms of dimensionless quantities. Note that FLJ(ρ) = 0. Another popular model for pair-wise interactions is the Morse potential shown in Figure 22.2b: VM (r ) = ε(e 2β(ρ− r ) − 2e β(ρ− r ) )

(22.29)

FM (r ) = 2εβ(e 2β(ρ− r ) − eβ(ρ− r ) )

(22.30)

and

his potential is commonly used for systems found in solid state at normal conditions. hese include elemental metallic systems and alloys, e.g., Harrison (1988). For the solid state, the typical kinetic energy of particles is less than the dislocation energy, and the particles are restrained to move in the vicinity of some equilibrium positions that form a regular spatial pattern, the crystal lattice. In the case of multiple particles, the total potential energy due to the LJ or Morse interaction is computed similar to Equation 22.25, and the required internal forces are found by utilizing Equation 22.5. he interaction between neutral particles described by a LJ or Morse potential is said to be short ranged, as contrasts the longrange Coulomb interactions. As seen from Figure 22.2, shortrange potentials are efectively zero if the separation r is larger than several equilibrium distances. he LJ and Morse potentials are the most common models for short-range pair-wise interactions. hey have found numerous applications in computational chemistry, physics, and nanoengineering. 22.2.2.2.3 Cutof Radius One important issue arising from MD computer simulations relates to the truncation of the potential functions, such as (22.26) and (22.29). Note that computing the internal forces (22.5) for the equations of motion due to only the pair-wise interaction in

22-7

Computational Nanomechanics 2 4

1

2

0

0

U(r)/ε σF(r)/ε

–2 1.0 (a)

1.5

2.0

U(r)/ε F(r)/(εβ) –1 0

2.5

2

(b)

r/σ

4

6

β (r – ρ)

FIGURE 22.2 Short-range potentials: (a) Lennard-Jones and (b) Morse.

Equation 22.14 results in (N2 − N)/2 terms, where N is the total number of particles. h is value corresponds to the case when one takes into account the interaction of each current atom i with all other atoms in the system j ≠ i; this can be computationally expensive even for considerably small systems. For short-range potentials, we can assume that the current atom only interacts with its nearest neighbors, found not further than some critical distance R. Typically, the value R is equal to several equilibrium distances ρ, and is called the cutof radius of the potential. Limiting the cutof radius to a sphere of several neighboring atoms can reduce the computational efort signiicantly. A truncated pair-wise potential can then be written as the following: ⎧⎪V (r ), r ≤ R V (tr) (r ) = ⎨ r>R ⎪⎩0,

(22.31)

If each atom interacts with only n atoms in its R-vicinity, the evaluation of the internal pair-wise forces will result in only nN/2 terms, which is considerably less than the (N 2 − N)/2 terms for a non-truncated potential. In order to assure continuity (diferentiability) of V tr, a “skin” factor can be alternatively introduced for the truncated potential by means of a smooth steplike function fc, which is referred to as the cutof function. he function fc provides a smooth and quick transition from 1 to 0, when the value of r approaches R, and it is usually chosen as a simple analytical function of the separation distance r. One example of a trigonometric cutof function is given by Equation 22.36.

molecular structures to account for chemical bond formation, their topology and spatial arrangement, as well as the chemical valence of atoms. However, the practical implementation of multi-body interactions can be extremely involved. As a result, all the multi-body efects of the order higher than three are usually ignored. Meanwhile, the three-body potential V3 is intended to provide contributions to the total potential energy U that depends on the value of the angle θijk between a pair of interparticle vectors rij and rik, forming a triplet of particles i, j, and k (see Figure 22.3): V3 (ri , rj , rk ) = V3 (cos θijk ), cos θijk =

(22.32)

Such a function is viewed as an addition to the two-body term (Equation 22.21), which accounts only for the absolute values of rij and rik. hree-body potentials are dedicated to relect changes in molecular shapes and bonding geometries in atomistic structures, e.g., Stillinger and Weber (1985), Takai et al. (1985). z j

rij θijk

i ri

rj rik rk

k

y

x

22.2.2.3 Multi-Body Interaction he higher order terms of the potential function (22.14) (m > 2) can be of importance in modeling of solids and complex

rij ⋅ rik rijrik

FIGURE 22.3

hree-body coordination of particles.

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Handbook of Nanophysics: Principles and Methods

he cutof function is chosen as

22.2.2.3.1 Local Environment Potentials As a matter of fact, explicit three-body potentials, such as Equation 22.32, are impractical in terms of computer modeling. Furthermore, they have been criticized for being unable to describe the energetics of all possible bonding geometries; see Biswas and Hamann (1985, 1987), Tersoff (1988b). At the same time, four- and five-body potentials appear computationally intractable, and generally contain too many free parameters. As a result, a number of advanced two-body potentials have been proposed to efficiently account for the specifics of a local atomistic environment by incorporating some specific multi-body dependencies inside the function V2, known as bond order functions, rather than introducing the multi-body functions Vm>2. Such potentials are called local environment potentials. The bond-order function is intended to implicitly describe the angular dependence of interatomic forces, while the overall pair-wise formulation is preserved. Local environment potentials are usually short ranged; therefore, cutoff functions can be utilized. Some of the most common models of this type are the Tersoff potential for a class of covalent systems, such as carbon, silicon, and germanium, the Tersoff (1986, 1988a,b), Brenner (1990), Los and Fasolino (2002), Rosenblum et al. (1999), and REBO Brenner et al. (2002) potentials for carbon and hydrocarbon molecules, and the Finnis–Sinclair potential for BCC metals, Finnis and Sinclair (1984) and Konishi et al. (1999). Most of the existing local environment potentials feature the following common structure:

⎧2, 1⎪ f c (r ) = ⎨1 − sin (π(r − R) / 2D), 2⎪ ⎩0,

ri ⎠

∑

(22.37)

Here, ρja is the averaged electron density for a host atom j, viewed as a function of the distance between this atom and the embedded atom i. hus, the host electron density is employed as a linear superposition of contributions from individual atoms, which in turn are assumed to be spherically symmetric. Information on the speciic shapes of the functions G, ρ, and VC for various

22-9

Computational Nanomechanics

metals and alloys can be gathered from these two references: Clementi and Roetti (1974) and Foiles et al. (1986). he embedded atom method has been applied successfully to study defects and fracture, grain boundaries, interdif usion in alloys, liquid metals, and other metallic systems and processes; a comprehensive review of the embedded atom methodology and applications is provided in Daw et al. (1993).

22.2.3 Numerical Heat Bath Techniques he modeling and simulation of multiparticle systems, investigation of various temperature-dependent macroscopic properties (e.g., internal energy, pressure, viscosity) oten require the availability of numerical methods for maintaining the temperature of the system at a particular target/reference value. From the thermodynamical point of view, such a system can be regarded as interacting with an external thermostat that keeps the temperature at a constant level by providing or removing heat in the course of time. One issue associated with such an approach is the way to represent the mathematical coupling between the degrees of freedom of the simulated system and the hypothetical heat bath. Standard coupling techniques include the thermostatting approach of Berendsen et al. (1984), the stochastic collisions method of Andersen (1980), and the extended systems method originated by Nosé (1984a) and extended by Hoover (1985). he Nosé–Hoover approach incorporates the external heat bath as an integral part of the system. his is achieved by assigning the reservoir an additional degree of freedom, and including it in the system Hamiltonian. he novel phonon approach (Karpov et al. 2007) that encapsulates the intrinsic mechanical properties of the crystalline lattice is more adequate for the modeling of nonmetallic solids, including carbon nanostructures. Below we review the Berendsen, Nosé–Hoover, and the phonon method in more detail. 22.2.3.1 Berendsen Thermostat he Berendsen model corresponds physically to a system of particles that experience viscous friction and are subject to frequent collisions with light particles that form an ideal gas at temperature T0, see Figure 22.4. Mathematically, Berendsen et al. (1984) utilize the Langevin equation (22.9) with a viscous friction force (22.8) and a stochastic external force with the properties (22.10 and 22.11). hese two forces are intended to represent coupling to an external heat bath and scale the atomic velocities during the numerical simulation to add or remove energy from the system as desired. he Langevin equations are written either for the entire set of particles (in gases and liquids), or for a local group of particles corresponding to a pre-boundary region of a solid structure. For the purpose of further discussion, we rewrite the Langevin equation (22.9) in terms of the velocity components: mvɺ j (t ) = Fj (t ) − mγ vj (t ) + R j (t ), j = 1, 2, …, 3N

(22.38)

hermostat T0

FIGURE 22.4 Physical model of the Berendsen thermostatting approach: atoms of a structure under analysis (large circles) are damped and subject to frequent collisions with light gas particles (small circles) at a target temperature T0.

where Fj is the standard interatomic force. According to the ergodic hypothesis, the time-averaged quantities (22.10 and 22.11) for a system in thermodynamic equilibrium are equal to the corresponding ensemble average quantities; therefore, R j (t ) = R(t ) = 0

(22.39)

R j (t )R j (t + t 0 ) = R(t )R(t + t 0 ) = aδ(t 0 )

(22.40)

22.2.3.1.1 Fluctuation-Dissipation heorem A reasonable physical assumption about the intensity of the random force R in Equation 22.40 can be made on the basis of the luctuation-dissipation theorem that gives the relationship between a luctuating force on some degree of freedom and the damping coeicient that determines dissipation in this degree of freedom: R(t )R(t + t 0 ) = 2mγkBT0δ(t 0 )

(22.41)

where T0 is the equilibrium system temperature. his theorem can be proven by utilizing the Langevin equation (22.38), where the interatomic force is omitted as not participating in the dissipation process, mvɺ(t ) = −mγ v(t ) + R(t )

(22.42)

he general solution of this equation reads t

v (t ) = v (0)e

−γ t

1 + R(τ)e −γ (t −τ) dτ m

∫ 0

(22.43)

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Handbook of Nanophysics: Principles and Methods

For an equilibrium system, the mean square value of this function is equal to v 2 (t ) = v 2 (t ) =

kBT0 m

(22.44)

Substituting Equation 22.43 into Equation 22.44, where the ensemble average is utilized yields, 2 v 2 (t ) = v 2 (0) e −2 γ t + m +

2 m2

t

∫ v(0)R(τ) e

−2 γ (t −τ )

dτ

0

t t

∫∫ R(τ)R(τ′) e

−γ (2t −τ −τ′ )

dτ ′dτ

(22.45)

0 0

In this expression, v 2 (0) = kBT0 /m

(22.46)

v(0)R(τ) = v(0)R(t ) = v(0)R(t ) = 0

(22.47)

In practice, the random force R can be sampled at each time step of a numerical simulation as a random Gaussian variable with zero mean and variance (mean square amplitude) 2mγkBT0. he sampling procedure is performed independently for each degree of freedom exposed to the thermal noise. Also, samples for two successive time steps are evaluated independent of each other. 22.2.3.1.2 Elimination of the Random Force In various applications, only the global thermodynamic behavior of the system is of importance. hen, it is computationally efective to eliminate the local random noise R i(t) in the Langevin equation (22.38), and to characterize the system/heat bath coupling via a time-dependent damping term. his damping term can be introduced on the basis of the following requirement: he new equation of motion must yield the same averaged behavior of the system’s kinetic and total energy for a given target temperature T0, as the original equation (22.9). We detail the relevant mathematical derivations below. First, write the time derivative of kinetic energy of the system in the form 3N

Eɺ k = lim R(τ)R(τ ′) = aδ(τ − τ ′)

Δt → 0

(22.48)

Eɺ k = lim

(22.49)

Δt → 0

0

where a = 2mγkBT0

(22.50)

Utilizing this value for Equation 22.40 proves the luctuationdissipation theorem (Equation 22.41). As follows from Equations 22.11 and 22.50, dynamic properties of the random force R in Langevin equation (22.38) can be summarized as R j (t ) = 0,

R j (t )R j ′ (t ′) = 2mγkBT0δ(t − t ′)δ jj ′

2 j

2 j

(22.52)

j =1

3N

t

∫

m

and rearrange it to get

herefore, relationship (22.45) can be reduced to kBT0 a (1 − e −2 γ t ) = 2 e −2 γ (t −τ ) dτ m m

∑ 2Δt (v (t + Δt ) − v (t ))

(22.51)

where T0 is the target system temperature. hese relationships can be physically interpreted as follows: (1) the function R has no directional preference, (2) R is a Gaussian random function of time with zero mean variance 2mγk BT0 for all degrees of freedom interacting with the heat bath; (3) the force Rj on degree of freedom j is uncorrelated with the force Rj′ on another degree of freedom j′; (4) the instantaneous value of R is not afected by its preceding values, i.e., the function R is uncorrelated with its time history.

∑ 2Δt (2v Δv + Δv ) m

j

2 j

j

(22.53)

j =1

According to (22.38), the change of velocity over a short time interval is Δvj = vj (t + Δt ) − v j (t ) = ≃

1 m

t + Δt

∫ (F (t ′) − mγ v (t ′) + R (t ′))dt ′ j

j

j

t

1 1 (Fj (t )Δt − mγ vj (t )Δt ) + m m

t + Δt

∫ R (t ′)dt ′ j

t

(22.54)

Substituting Equation 22.54 into Equation 22.53 and separately considering the irst term, 3N

lim

Δt → 0

∑ j =1

mvj Δ v j = Δt

3N

3N

1 Δt

t + Δt

∑ (F v − mγ v ) + lim ∑ ∫ v (t )R (t ′)dt ′ j j

j =1

2 j

Δt → 0

3N = −Uɺ − 2γEk + lim Δt → 0 Δ t = −Uɺ − 2γEk

j =1

j

j

t

t + Δt

∫

v(t )R(t ′ ) dt ′

t

(22.55)

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Computational Nanomechanics

For this derivation, we utilized the time derivative of potential energy, dU (x1 , x 2 ,…, x 3N ) = Uɺ = dt

3N

∑ j =1

∂U dx j =− ∂x j dt

3N

∑ j =1

Hɺ = 3γNkB (T0 − T )

∑F v

j j

(22.56)

j =1

mv 2j 2

(22.57)

where H is the system Hamiltonian. his equation must be satisied by the sought equation of motion ater elimination of the random force term R. he transformation from Equation 22.61 to Equation 22.62 employs Ek = 3NkBT/2, where T is the current system temperature viewed as a function of time. We can show that the following equation, ⎛ T ⎞ m jvɺj = − Fj − m j γ ⎜ 1 − 0 ⎟ vj , j = 1, 2, …, 3N ⎝ T⎠

and the ensemble average, 1 3N

lim

Δt → 0

∑ j =1

(22.63)

3N

∑ v (t )R (t ′) = v(t )R(t ′) = 0 j

(22.58)

j

j =1

known as Berendsen equation of motion, satisies Equation 22.62. In terms of the radius vectors, it can be written as

as follows from Equation 22.47. According to Equation 22.54, the second term in Equation 22.53 becomes 3N

(22.62)

3N

current kinetic energy, Ek =

and rearrange this relationship to obtain the energy equation,

mΔv 2j 1 = lim Δt → 0 2mΔt 2 Δt 3N = lim Δt → 0 2mΔt

3 N t + Δt

t + Δt

∑ ∫ R (t ′)dt ′ ∫ R (t ′′)dt ′′ j

j =1

t

j

∫ ∫

3N γkBT0 = lim Δt → 0 Δt

R(t ′)R(t ′′) dt ′′ dt ′

t

t + Δt t + Δt

∫ ∫ δ(t ′ − t ′′)dt ′′ dt ′ t

1 = 3γNkBT0 lim Δt → 0 Δt

t

t + Δt

∫ dt ′ = 3γNk T

B 0

lim(Fj (t )Δt )2 / Δt = 0 Δt →0

lim(v j (t )Δt )2 / Δt = 0 Δt →0

lim(Fj (t )Δt )(v j (t )Δt ) / Δt = 0 Δt →0

(22.60)

∑ F (t )R (t ′) = 3N F(t )R(t ′) = 0 j

∑ m v vɺ

j j j

j

=−

⎛

T0 ⎞

∑ v ∇ U − γ ⎜⎝1 − T ⎟⎠ ∑ m v j

j

j

2 j j

j

⎛ T ⎞ ⇒ Eɺ k = −Uɺ − 2 γEk ⎜ 1 − 0 ⎟ ⎝ T⎠ ⎛ T ⎞ ⇒ Hɺ = −3γNkBT ⎜ 1 − 0 ⎟ = 3γNkB (T0 − T ) ⎝ T⎠

(22.65)

hus, from an energetic point of view, the Berendsen equation (22.63) is equivalent to the original Langevin equation (22.38) in application to multiparticle systems. Berendsen thermostatting equations are amongst the most widely used in practical MD simulations. Note that the Hamiltonian H represents internal energy of a thermodynamic system. Assume the internal energy and temperature are related to each other as U=

3 NkBT 2

(22.66)

hen the time rate of temperature change is represented by the irst-order diferential equation,

j

∑ v (t )R (t ′) = 3N v(t )R(t ′) = 0 j

Pre-multiplying Equation 22.63 with vi and summing over all the degrees of freedom gives

(22.59)

t

Here, we showed only one of the six terms arising from Δvj2. he other ive terms are trivial due to the following arguments:

j

(22.64)

t

t + Δt t + Δt

t

⎛ T ⎞ miɺɺ ri = −∇iU − mi γ ⎜ 1 − 0 ⎟ rɺi , i = 1, 2, …, N ⎝ T⎠

j

j

Tɺ = 2 γ(T0 − T )

Next we can utilize the results of Equations 22.55 and 22.59 for Equation 22.53, Eɺ k = −Uɺ − 2γEk + 3γNK BT0

(22.61)

(22.67)

he value τT = (2γ)−1 gives the coupling constant that represents the characteristic time of equilibration of the system with the heat bath.

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Handbook of Nanophysics: Principles and Methods

he time-dependent parameter T ⎞ ⎛ ζ(t ) = γ ⎜ 1 − 0 ⎟ ⎝ T (t ) ⎠

(22.68)

in the Berendsen equation can be viewed as a dynamic damping parameter. his parameter turns to zero when the system temperature approaches the target value T0. he current system temperature T for Equation 22.63 or Equation 22.64 can be computed as 2 1 T= Ek ≃ kB 3NkB

3N

∑m v

2 j j

(22.69)

j =1

for each successive time step of a numerical solution. he value γ should be chosen small enough so the physical properties of the system are not violated by the artiicial damping forces. On the other hand, γ has to be signiicantly large to ensure thermal equilibrium within a reasonable simulation time. In applications to crystal lattices, the value of γ is normally on the order of several percent of the maximum atomic lattice frequency. 22.2.3.2 Nosé–Hoover Heat Bath he Nosé–Hoover heat bath utilizes a dynamic friction coeicient, which evolves according to a irst-order diferential equation: 1⎛ ζɺ (t ) = ⎜ Q ⎜⎝

3N

∑m v

2 j j

j

⎞ − (3N + 1)kBT0 ⎟ ⎟⎠

(22.70)

where Q is a method parameter of dimension energy × (time) . hus, the diference between the simultaneous and target kinetic energy of the system determines the time derivative of the friction coeicient that contrasts with Berendsen thermostat, where the dynamic friction coeicient is simply Equation 22.68. Hoover (1985) has shown that the Berendsen equations are overdamped and they lead to a statistical ensemble not compliant with the Gibbs canonical distribution (??). Provided that such a distribution is sought for the microstates associated with solution of the Langevin equation, the friction coeicient must follow the relaxation equation (22.70). Note that the term 3N + 1 stands for the total number of degrees of freedom in the system that includes the 3N coordinates of the particles, plus the variable ζ. he relaxation equation (22.70) is solved simultaneously with the Langevin equations (22.9), or (22.38), where γ is replaced by ζ(t). he Langevin equations can be presented in the alternative Hamiltonian form: 2

rɺi =

pi , mi

pɺ i = −∇iU − ζ(t )pi

(22.71)

he Hoover equations (22.70 and 22.71) serve as a practical update of the Nosé (1984a,b) thermostatting method, which also used an additional variable for the momenta rescaling,

utilized the scaled coordinates, and irst reproduced canonical distribution for positions and scaled momenta. hese works provided a vital background for the present method. As results, Equations 22.70 and 22.71 are usually referred to as the Nosé– Hoover thermostat. Berendsen and Nosé–Hoover thermostatting approaches have been used in MD simulations of a vast range of physical and engineering systems and processes, and particularly in simulations of gases and liquids. Applications to ionic and metallic crystals, where the heat is mostly transferred by the electron gas, oten yield a suiciently accurate physical model. On the other hand, the physical concept behind these models makes them less adequate in applications to solid–solid interfaces, where the heat exchange mechanism is governed dominantly by oscillations of the lattice atoms (e.g., nonmetallic crystals, carbon nanostructures), and where the heat bath cannot be viewed as a gaseous substance surrounding the simulated crystal structure. In these instances, the phonon or conigurational method by Karpov et al. (2007) provides a more accurate physical model.

22.2.4 Molecular Dynamics Applications MD is used for the numerical solution of Lagrange or Newtonian equations (22.6) for classical multiparticle systems, as well as postprocessing and computer visualization of the time-dependent solution data. In this section, we review applications of the Newtonian formalism to some typical MD simulations in the ield of nanomechanics and materials. 22.2.4.1 Modeling Inelasticity and Failure in Gold Nanowires A current research emphasis in nanostructured materials is the behavior of metallic nanowires. Nanowires are envisioned to have great potential as structural reinforcements, biological sensors, elements in electronic circuitry, and many other applications. Interested readers can i nd reviews on this comprehensive subject by Lieber (2003) and Yang (2005). he examples shown here are MD simulations of the tensile failure of gold nanowires, as shown in Park and Zimmerman (2005). he wire size was initially 16 nm in length with a square cross section with length 2.588 nm. he wire was irst quasistatically relaxed to a minimum energy coniguration with free boundaries everywhere, then thermally equilibrated at a i xed length to 300 K using a Nosé–Hoover thermostat, which is described in Section 22.2.3.2. Finally, a ramp velocity was applied to the nanowire ranging from zero at one end to a maximum value at the loading end; thus, one end of the nanowire was i xed, while the other was elongated at a constant velocity each time step corresponding to an applied strain rate of ϵ˙ = 3.82 · 109 s−1. As can be seen in Figure 22.5, the gold nanowire shows many of the same failure characteristics as macroscopic tension specimens, such as necking and yield. However, one very interesting quality of gold nanowires concerns their incredible ductility, which is manifested in the elongation of extremely thin nanobridges, as

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Computational Nanomechanics

Energy

T = 0 ps

–2.540e+00 –2.899e+00 –3.258e+00 –3.616e+00 –3.975e+00

T = 66 ps

y T = 102 ps

x

z

T = 180 ps

FIGURE 22.5 (See color insert following page 25-16.) MD simulation of the tensile failure of a gold nanowire using an EAM potential.

seen in the later snapshots in Figure 22.5. hese nanobridges are extremely low coordinated chains of atoms which in irst principles simulations are shown to form single atom chains. For MD simulations to capture these phenomena, it is very important to utilize an interatomic potential, which can accurately model the material stacking fault energy; this point is elucidated in Zimmerman et al. (2000). As quantum mechanical calculations cannot yet model entire nanowires, MD simulations will continue to be a necessary tool in modeling nanostructured materials and atomic-scale plasticity. 22.2.4.2 Interaction of Nanostructures with Gas/Liquid Molecules here has been signiicant efort aimed at the modeling and simulation of interactions between nanostructures and the low of liquids and gases at the atomic scale. Particular interest arose from the interaction of carbon nanotubes (CNT), e.g., Qian et al. (2002) and Saether et al. (2003), with a surrounding liquid or gas, including the resultant deformation and vibration of the CNT, drag forces, slip boundary efects, hydrophobic/hydrophilic behavior of the nanotubes, and nanosensors applications. Example references on these topics are the following: Bolton and Gustavsson (2003), Bolton and Rosen (2002), Li et al. (2003), and Walther et al. (2001, 2004). Snapshots of a typical gas-structure atomic-scale simulation are shown in Figure 22.6. Here, a carbon nanotube is immersed in helium at given temperature and concentration. he carbon atoms are initially at rest; however, collisions with fast helium atoms induce vibration and delection of the nanostructure. he mathematical modeling of these types of systems, considered as a system of N spherical particles, utilizes the Newtonian equations of motion miɺɺri = −∇iU ,

i = 1, 2, …, N

(22.72)

FIGURE 22.6 Molecular dynamics simulation of a carbon nanotube immersed into monoatomic helium gas at a given temperature and concentration.

where the potential function describes three types of atomic interactions present in the system, U = U C −C + U He − He + U C − He

(22.73)

he irst term describes the interaction between carbon atoms, the second the interaction of helium molecules (note that helium molecules are monoatomic), and the third the potential of interaction between carbon atoms and helium molecules. For the example shown in Figure 22.6, the C–C interaction is modeled by the Tersof potential (22.34), while the He–C and He–He interactions occur via two LJ potentials (22.26) with diferent sets of the parameters σ and ϵ. In general, if the system under analysis is comprised of nf distinct phases, the total number of diferent components in the potential U is equal to nf (nf + 1)/2. One convenient approach to modeling cylindrical macromolecules, such the carbon nanotube, is depicted in Figure 22.7; the modeling procedure starts by producing a lat sheet of carbon

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Handbook of Nanophysics: Principles and Methods

Nanotube [5,6] 256 atoms

FIGURE 22.7

Approach to modeling 3D nanotube structures.

rings, on the basis of given chirality and tubule translation vectors (Qian et al. 2002), and followed by wrapping of the lat sheet into a 3D structure. Initial radius vectors for the equations of motion (Equation 22.72) are determined by the geometry of the system, as well as physical properties of the gas, such as concentration and volume occupied. Initial velocities of the carbon and helium particles are determined by the initial temperature of the CNT and the gas, and are evaluated (sampled) from the Maxwell–Boltzmann distribution. 22.2.4.3 Nanoindentation Atomic-scale indentation of thin i lms and nanostructured materials is an efective experimental technique for the analysis of material properties. h is technique consists of pushing a sharp tip made of a hard material, usually diamond, into a matrix/substrate material under investigation, see Figure 22.8, and measuring the loading force as a function of indentation depth. Material properties of the matrix are then evaluated from the analysis of a resultant load-indentation curve, properties of the tip, as well as plastic behavior of the substrate material. Numerical modeling and simulation of the nanoindentation process for a tip-substrate system comprised of N spherical atoms or molecules requires utilization of the Newtonian equations (Equation 22.72) where the gradient of function U determines the internal potential forces of atomic interaction. he function U describes the interaction between the substrate atoms, and may also include components describing interactions between matrix and indenter, and between indenter atoms. In the simplest case, displacement boundary conditions are applied

throughout the domain including atoms subject to the indenter load, so that a sole substrate potential is required for Equation 22.72. Note that for solid domains, this potential is such that the substrate atoms, in the absence of external forcing, cannot move freely in the domain; they are constrained to vibrate in the vicinity of some equilibrium coniguration determined by the local minima of function U. Initial coordinates of the atoms utilized for solving Equation 22.72 usually correspond to one of these equilibrium conigurations. As in most atomic-scale simulations, initial velocities are sampled from the Maxwell– Boltzmann distribution. he results of a typical 2D simulation are depicted in Figure 22.8. One interesting feature of nanoindentation simulations, which is emphasized in this example, is the initiation and propagation of lattice dislocations that determine the plastic behavior of the substrate. Here, the substrate material is modeled as an initially perfect hexagonal lattice structure governed by the LJ potential (22.26) with a cutof between the second- and thirdnearest neighbors. he boundary conditions are the following: i xed y-components on the lower edge of the block and under the rectangular indenter. he speed of sound in this material is 1 km/s. he loading rate is 15 m/s. Figure 22.9 shows a sequence of averaged contour plots of potential energy of the atoms. As seen from this igure, in the vicinity of a dislocation core, atoms are mis-coordinated and have a higher potential energy than other atoms in the material. Dislocations move away from the nucleation site with the velocity of about 0.2 of the speed of sound, or 13 times the indenter speed.

(a)

(b)

(c)

(d)

Cantilever and tip Specimen

FIGURE 22.8 Nanoindentation, experimental scheme.

FIGURE 22.9 Dislocation dynamics in a 2D nanoindentation simulation: averaged contour plots of potential energy of the atomic system; individual atoms are not shown.

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Computational Nanomechanics

FIGURE 22.10 (See color insert following page 25-16.) 3D nanoindentation of a crystalline metallic substrate.

Figure 22.10 shows a cross section through a relatively small, though typical 3D nanoindentation problem. Here, the domain is a 25 nm face-centered cube with roughly 376,000 atoms which interact via a σ = ϵ = 1 LJ potential (22.26). he interactions are nearest neighbor, and the indenter, shown as a sphere, is modeled as a repulsive pair-wise potential, V2 = V2 ( ri − rI )

(22.74)

where ri are radius vectors of the substrate atoms rI is the radius vector of the center of the indenter he coloring is given in Figure 22.10 by a coordination number, which is the total number of neighboring atoms within the cutof radius of the potential for a given atom: blue is lowest, red is highest, and all atoms with coordination number equal to 12 (perfect face-centered lattice) have not been visualized to show lattice defects more clearly. hus, the colored atoms shown represent the region of plastic deformation in the vicinity of the indenter. In contrast to the previous example, far-reaching localized dislocations are not formed here due to the large relative size and smoothness of the indenter.

nanodeposition, is comprised typically of a solid structure and a gaseous domain governed by a three-component potential, similar to Equation 22.73. A directional deposition process viewed as a sequence of depositions of individual atomic or molecular ions with known orientation and modulus of the incident velocity vector is sometimes called ion-beam deposition; more generally, they are referred to as a physical or chemical vapor deposition process. Atomic ions can be controlled by means of electromagnetic ields in order to provide the required intensity, kinetic energy, and orientation of the ion beam with respect to the surface of a substrate. he ion-beam deposition process is illustrated in the MD simulation frame depicted in Figure 22.11. Individual carbon atoms of known mean kinetic energy and angle of incidence are deposited on the surface of a monocrystal diamond substrate to form a thin amorphous ilm. he situation shown corresponds to energetic ions with mean kinetic energy several times higher than the bonding energy of carbon atoms in the diamond substrate. hen, the bombarding ions destroy the crystalline structure of the substrate surface, and the growing amorphous i lm is comprised of cross-dif used deposited and substrate atoms. he carbon–carbon interaction can be modeled via the Tersof (1988a) or Brenner (1990) potentials.

22.2.4.4 Nanodeposition he modeling and simulation of deposition of individual vapor (gas) molecules on the surface of a solid body (substrate) is an important problem in the area of surface engineering, mechanics of thin i lms, and physical chemistry. he computational modeling of this process, which is called oten

22.2.4.5 Crack Propagation Simulations MD simulations have been successful in application to atomicscale dynamic fracture processes, e.g., Abraham et al. (1997, 2002). Two snapshots of a typical MD simulation of fracture in a 2D structure under tensile load are depicted in Figure 22.12.

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Handbook of Nanophysics: Principles and Methods

Amorphous film

Crystalline substrate

FIGURE 22.11 Deposition of an amorphous carbon i lm (light gray atoms) on top of a diamond substrate (dark atoms).

FIGURE 22.13 (See color insert following page 25-16.) MD simulation of a shear-dominant crack propagation process; the middle snapshot shows the formation of a “daughter” crack ahead of the main crack tip.

PE –2.980e+00 –2.985e+00 –2.990e+00 –2.995e+00 –3.000e+00

PE –2.980e+00 –2.985e+00 –2.990e+00 –2.995e+00 –3.000e+00

FIGURE 22.12 Averaged potential energy proi les for an MD fracture simulation at two diferent time steps.

Note that the wave created due to opening the fracture surfaces heads out toward the MD boundary, relects from it, and propagates back in toward the crack. Fracture under shear loading is presented in Figure 22.13. It shows a reproduction of the numerical experiments performed by Abraham and Gao (2000) and Gao et al. (2001) to analyze the mechanism by which a mode II (shear) dominated crack is able to accelerate past the Rayleigh wave speed, the lower theoretical max limit, over the “forbidden” velocity zone to the longitudinal speed of sound, the absolute theoretical maximum. he mechanism was seen to be the formation of a “daughter” crack ahead of the main crack tip; see the second snapshot in Figure 22.13. he system shown is a 2D hexagonal lattice with a LJ σ = ϵ = 1 strip through which the crack propagates. he loading is mixed shear/tension, but the shear is dominant (5:1 shear:tensile strain rate ratio). he system is 1424 atoms long by 712 atoms high and the precrack is 200 atoms long in the center of the let vertical face. he model shows several interesting phenomena, namely, the presence of a distinct displacement wavefront, and corresponding boundary relections, as well as the formation of a Mach cone upon accelerating to the speed of sound in the material. Additionally, an expanding halo can be seen behind the Mach cone as a result of the passing shock wave.

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Computational Nanomechanics

he main crack tip propagates at nearly the speed of sound, and produces shock waves that form the Mach cone. he third snapshot indicates that the resultant crack propagation speed is higher than the speed of sound, since the Mach cone is still approaching the right vertical boundary ater complete separation of the structure. In conclusion, we note that materials applications of classical particle dynamics, such as nanoindentation, deposition, atomic-scale failure, and others, oten require the MD simulation to be very large, in order to diminish boundary efects. Otherwise, the waves that have been emitted by the indenter, atoms deposited, or crack tip, relect from the boundaries and continue to incorrectly participate in the phenomena under investigation. hough the increase in computational power has made million atom MD calculations fairly commonplace, it appears to be computationally and physically unnecessary to have full atomistic resolution far from the crack, or indenter tip. he waves emitted are usually elastic in nature, and do not cause atomic lattice imperfections, i.e., plasticity, far from the localized domains of plastic deformation. hen, for example, the crack propagation can be correctly modeled using full atomistic resolution, while the propagation of the elastic waves away from the cracktip can be accurately modeled and captured using a continuum formulation. he usage of i nite elements (FEs) at a suicient distance from the crack tip would reduce the computational expense of having full atomistic resolution, while still accurately capturing the necessary physics. In greater detail, these issues are discussed in Section 22.3 summarizing the multiscale modeling methods that allow concurrent and hierarchical coupling of MD and FEM simulations.

22.3 Introduction to Multiple Scale Modeling In recent years, thanks mainly to the constantly increasing surge in computational power, atomistic simulations have been utilized with great success in the modeling of nanoscale materials phenomena. However, despite these technological improvements, MD simulations still cannot be utilized to simulate more than a few billion atoms, or a few cubic microns in volume. hus, while the modeling and simulation of nanoscale materials is within the realm of MD simulations, many important microdevices are too large to be simulated using MD. Furthermore, in many interesting applications, nanoscale materials will be used in conjunction with other components that are larger, and have diferent response times, thus operating at diferent time and length scales. hus, single scale methods such as MD, e.g., Allen and Tildesley (1987), Haile (1992), or ab initio methods, will have diiculty in analyzing such hybrid structures due to the limitations in terms of time and length scales that each method is conined to. herefore, the need arises to couple atomistic methods with approaches that operate at larger length scales and longer timescales.

Continuum methods have in contrast had much success in the macroscale modeling and simulation of structures. FE methods, e.g., Belytschko et al. (2000), Hughes (1987), are now the standard numerical analysis tool to study diverse problems such as the modeling of crashworthiness in automobiles, the luidstructure interaction of submarines, plasticity in manufacturing processes, and blast and impact simulations. herefore, the logical approach taken by many researchers in the desire to create truly multiple scale simulations that exist at disparate length and timescales has been to couple MD and FE in some manner. Unfortunately, the coupling of these methods is not straightforward for the reasons discussed next. he major problem in multiscale simulations is that of pathological wave relection, which occurs at the interface between the MD and FE regions. he issue is that wavelengths emitted by the MD region are considerably smaller than that which can be captured by the continuum FE region. Because of this and the fact that an energy conserving formulation is typically used, the wave must go somewhere and is thus relected back into the MD domain. h is leads to spurious heat generation in the MD region, and a contamination of the simulation. he retention of heat within the MD region can have extremely deleterious efects, particularly in instances of plasticity where heat generated within the MD region is trapped; in such an extreme situation, melting of the MD region can eventually occur. A separate, but related issue to efective multiscale modeling is that of extending the timescale available to MD simulations. h is issue still remains despite the eforts of current multiscale methods to limit the MD region to a small portion of the computational domain. Despite the reduction in the MD system size, limits still exist on the duration of time for which the MD system can be simulated. Research has been ongoing in the physics community to prolong the MD simulation time, particularly for infrequent events such as surface dif usion. Two excellent examples of the types of methods currently under investigation can be found in the works of Voter (1997) and Voter et al. (2002). Other issues that typically arise in attempting to couple simulations that operate at disparate length and timescales are discussed below in the context of some recent methods dealing with these issues in various manners. While this chapter attempts to cover many of the existing approaches to multiple scale modeling, it is by no means complete. Two recently written review papers that comprehensively cover the ield of multiple scale modeling are those of Liu et al. (2004a) and Curtin and Miller (2003).

22.3.1 MAAD One pioneering multiscale approach was the work of Abraham et al. (1998). he idea was to concurrently link tight binding (TB), MD, and FEs together in a uniied approach called MAAD (macroscopic, atomistic, ab initio dynamics). Concurrent linking here means that all three simulations run at the same time,

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Handbook of Nanophysics: Principles and Methods

and dynamically transmit necessary information to and receive information from the other simulations. In this approach, the FE mesh is graded down until the mesh size is on the order of the atomic spacing, at which point the atomic dynamics are governed via MD. Finally, at the physically most interesting point, i.e., at a crack tip, TB is used to simulate the atomic bond breaking processes. he idea of meshing the FE region down to the atomic scale was one of the irst attempts to eliminate spurious wave relection at the MD/FE interface. he logic was that gradually increasing the FE mesh size would reduce the amount of relection back into the MD region. However, meshing the FE region down to the atomic spacing presents two problems, one numerical and one physical. he numerical issue is that the timestep in an FE simulation is governed by the smallest element in the mesh. hus, if the FEs are meshed down to the atomic scale, many timesteps will be wasted simulating the dynamics in these regions. Furthermore, it seems unphysical that the variables of interest in the continuum region should evolve at the same timescales as the atomistic variables. he physical issue in meshing the FE region down to the atomic scale lies in the FE constitutive relations. he constitutive relations typically used in FE calculations, e.g., for plasticity, are constructed based on the bulk behavior of many dislocations. Once the FE mesh size approaches the atomic spacing, each FE can represent only a small number of dislocations, the bulk assumption disappears, and the constitutive relation is invalidated. he overlapping regions (FE/MD and MD/TB) are termed “handshake” regions, and each makes a contribution to the total energy of the system. he total energy of the handshake regions is a linear combination of the energies of the relevant computational methods, with weight factors chosen depending on which computational method contributes the most energy in the handshake region. he three equations of motion (TB/FE/MD) are all integrated forward using the same timestep. he interactions between the three distinct simulation tools are governed by conserving energy in the system as in Broughton et al. (1999) H TOT = H FE + H FE/MD + H MD + H MD/TB + H TB

(22.75)

More speciically, the Hamiltonian, or total energy of the MD system can be written as H MD =

∑V i< j

(2)

(rij ) +

∑V

he summation convention i < j is performed so that each atom ignores itself in inding its nearest neighbors. Here, the potential energy is comprised of two parts. he irst (V (2)) are the two-body interactions, for example, nearest-neighbor spring interactions in 1D. he second part are the three-body interactions (V (3)), which incorporate features such as angular bonding between atoms. he three-body interactions also make the potential energy of each atom dependent on its environment. he FE Hamiltonian can be written as the sum of the kinetic and potential energies in the elements, i.e., (22.77)

H FE = VFE + K FE Expanding these terms gives VFE =

1 ⑀(r) ⋅ C ⋅ ⑀(r)dΩ 2

(22.78)

1 ρ(r)(uɺ )2 dΩ 2

(22.79)

∫ Ω

K FE =

∫ Ω

where ϵ is the strain tensor C is the stif ness tensor ρ is the material density u˙ are the nodal velocities he TB total energy is written as N occ

VTB =

∑ ⑀ + ∑V n

n =1

rep

(rij )

(22.80)

i< j

his energy can be interpreted as having contributions from an attractive part ϵn and a repulsive part V rep. Nocc are the number of occupied states. While a detailed overview of tight binding methods is beyond the scope of this work, further details can be found in Foulkes and Haydock (1989). MAAD was applied to the brittle fracture of silicon by Abraham et al. (1998).

22.3.2 Coarse-Grained Molecular Dynamics (3)

(rij , rik , Θijk ) + K

(22.76)

i ,( j < k )

where the summations are over all atoms in the system K is the kinetic energy of the system rij and rik indicate the distance between two atoms i and j and i and k respectively Θijk is the bonding angle between the three atoms

An approach related to the TB/MD/FE approach of Abraham et al. was developed by Rudd and Broughton (1998), called coarse-grained molecular dynamics (CGMD). his approach removes the TB method from the MAAD method and instead couples only FE and MD. he basic idea in CGMD is that a coarse-grained energy approximation which converges to the exact atomic energy is utilized to derive the governing equations of motion. he coarse-grained energy from which the equations of motion are extracted is deined to be

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Computational Nanomechanics

E (u k , uɺ k ) = U int +

1 2

∑ (M

jk

uɺ j ⋅ uɺ k + u j ⋅ K jk ⋅ uk )

(22.81)

j,k

where the internal energy Uint = 3(N − Nnode)kT the kinetic energy is dei ned as Mjk u˙ j · u˙ k the potential energy is dei ned as uj · Kjk · uk the displacement are u and the velocities are u˙ he internal energy represents the thermal energy of those degrees of freedom which have been coarse grained (eliminated) out of the system; clearly, as the number of nodes approaches the number of atoms, this term disappears, and the full atomistic energy is recovered. he stif ness matrix Kjk and mass matrix Mjk are calculated using weight functions which are similar in form to FE shape functions. herefore, while the explicit equation of motion, which is solved in CGMD, is not found in the work of Rudd and Broughton (1998), it appears as though CGMD mimics the behavior of a FE mesh, which is graded down to the MD atomic spacing in regions of interest, and is coarsened away from the MD region. herefore, it is expected that CGMD would sufer from the same issues as MAAD, i.e., that the mesh grading would eventually reach a point where the high-frequency MD wavelengths would not be representable in the continuum, and hence be relected back into the MD domain. his notion is supported by the paper of Rudd (2001), in which the notion of dissipative Langevin dynamics (Adelman and Doll 1976) is introduced into the CGMD formulation. he equation of motion is then given to be t

Mijuɺɺ j = −Gik−1uk +

∫ η (t − τ)uɺ (τ)dτ + F (t ) ik

k

i

(22.82)

−∞

where Mij is a mass matrix Gjk is a stifness-like quantity ηik is a time history, or memory function Fi(t) is a random force he addition of the dissipative terms to the equation of motion seems to clearly indicate that the original formulation of CGMD did sufer from spurious wave relection as coarse graining of the mesh occurred. It is interesting to note that a similar expression to (22.81) was derived by Wagner and Liu (2003) for a system involving multiple scales. In the Wagner and Liu work, the ensemble multiple scale kinetic energy behaves similar to the energy in (22.81), in that as the number of FE nodes approaches the atomic limit, the purely atomistic kinetic energy is recovered.

22.3.3 Quasicontinuum Method A well-known quasistatic multiple scale method, the quasicontinuum method, was developed by Tadmor et al. (1996). Examples of applications and further improvements on the quasicontinuum method are the works of Miller et al. (1998) and Knap and Ortiz (2001). A recent review concentrating on the history and development of the quasicontinuum method is given by Miller and Tadmor (2003). While the quasicontinuum method is essentially an adaptive FE method, the atomistic to continuum link is achieved here by the use of the Cauchy–Born rule. he Cauchy–Born rule assumes that the continuum energy density W can be computed using an atomistic potential, with the link to the continuum being the deformation gradient F. To briely review continuum mechanics, the deformation gradient F maps an undeformed line segment dX in the reference coniguration onto a deformed line segment dx in the current coniguration: dx = F dX

(22.83)

In general, F can be written as F = 1+

du dX

(22.84)

where u is the displacement. If there is no displacement in the continuum, the deformation gradient is equal to unity. he major restriction and implication of the Cauchy–Born rule is that the deformation of the lattice underlying a continuum point must be homogeneous. his results from the fact that the underlying atomistic system is forced to deform according to the continuum deformation gradient F, as illustrated in Figure 22.14. By using the Cauchy–Born rule, Tadmor et al. (1996) were able to derive a continuum stress tensor and tangent stif ness directly from the interatomic potential, which allowed the usage of nonlinear FE techniques. h is can be done by the following relations: P=

∂W ∂FT

F(x, t)

FIGURE 22.14 Illustration of the Cauchy–Born rule.

(22.85)

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Handbook of Nanophysics: Principles and Methods

C=

∂ 2W ∂F T ∂F T

An updated version of the Cauchy–Born rule was proposed by Arroyo and Belytschko (2004). Adaptivity criteria were used in regions of large deformation so that full atomic resolution could be achieved in these instances, i.e., near a dislocation. A nonlocal version of the Cauchy–Born rule was also developed so that nonhomogeneous deformations such as dislocations could be modeled. he quasicontinuum method has been applied to quasistatic problems such as nanoindentation, atomic-scale fracture, and grain boundary interactions.

22.3.4 CADD Recently, a new method for quasistatic coupling termed CADD (coupled atomistics and discrete dislocation) was presented by Curtin and Miller (2003) and Shilkrot et al. (2002, 2004). he approach taken here is to couple molecular statics with discrete dislocation plasticity (van der Giessen and Needleman 1995). he motivation in doing so is such that defects, mainly dislocations, generated within the atomistic region are allowed to pass through the atomistic/continuum border into the continuum, where they are represented via discrete dislocation mechanics. Because discrete dislocation mechanics incorporates the elastic stress ield emitted from a dislocation into the continuum stress and modulus expressions, the defects are able to be tracked once they pass into the continuum region, and also evolve in the continuum by following predeined sets of evolution laws. As the atomistic side of the calculation relies on standard principles, we briely discuss the discrete dislocation continuum to which the atomistic region is coupled. he continuum energy Ec is deined to be

∑ E (U , U , d ) − ∫ T u dA μ

μ

I

c

i

0

(22.88)

where ~ is the contribution from the discrete dislocations u û is a correction term, which is necessary due to the fact that the discrete dislocation solution is for an ininite medium

where C is the Lagrangian tangent stifness P is the irst Piola–Kirchof stress tensor

Ec =

ɶ + uˆ u=u

(22.86)

(22.87)

Noting that the strains and stresses can be decomposed accordingly, the continuum energy Ec can be rewritten as Ec =

1 2

∫ (uˆ + uɶ) : (⑀ˆ + ɶ⑀)dV − ∫ T (uɶ + uˆ )dA 0

Ωc

(22.89)

dΩT

~ ields are obtained by minimizhe equilibrium displacement u ing (22.89), i.e., ∂E c =0 ɶc ∂u

(22.90)

Ater the continuum displacement ields are known, the forces pi on the discrete dislocations are calculated by minimizing Ec with respect to the discrete dislocation positions pi = −

∂E c ∂d i

(22.91)

At this point, an iterative procedure involving the discrete dislocation positions, FE positions, and atomic positions is solved until all degrees of freedom are at equilibrium. We note that the atomic degrees of freedom are defined separately, but the interface FE displacements UI are used to prescribe boundary conditions for the atomistic iterative procedure, and vice versa. he approach has been validated via 2D problems, including fracture, nanoindentation, and atomic-scale void growth. Current issues facing the CADD developers include the extension to dynamic problems, and the passing of dislocations from the atomistic to continuum regions in 3D, where a dislocation is a loop that can reside in both atomistic and continuum regions at the same time.

dΩ T

where UI are the MD/FE interface nodes Uc are the continuum nodes di are the positions of the discrete dislocations in the continuum T0 is the prescribed traction on the continuum boundary dΩT he total stresses, strains, and displacements in the continuum can all be written as functions of the contribution from the discrete dislocations, and a correction term (we write for the displacement only):

22.3.5 Bridging Scale Method his section introduces the bridging scale concurrent method, which was recently proposed by Wagner and Liu (2003) to couple atomistic and continuum simulation methods. he fundamental idea is to decompose the total displacement ield u(x) into coarse and ine scales u(x ) = u(x ) + u′(x )

(22.92)

his decomposition has been used before in solid mechanics in the variational multiscale methods (Hughes et al. 1998), and

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Computational Nanomechanics

reproducing kernel particle methods (Liu et al. 1995a,b). he – is that part of the solution which can be reprecoarse scale u sented by a set of basis functions, i.e., FE shape functions. he ine scale u′ is deined as the part of the solution whose projection onto the coarse scale basis functions is zero; this implies orthogonality of the coarse and ine scale solutions. In order to describe the bridging scale, irst imagine a body in any dimension which is described by Na atoms. he notation used here will mirror that used by Wagner and Liu (2003). he total displacement of an atom α is written as uα . he coarse scale displacement is a function of the initial positions X α of the atoms. It should be noted that the coarse scale would at irst glance be thought of as a continuous ield, since it can be interpolated between atoms. However, because the i ne scale is deined only at atomic positions, the total displacement and thus the coarse scale are discrete functions that are deined only at atomic positions. For consistency, Greek indices (α, β, …) will deine atoms for the remainder of Section 22.3, and uppercase Roman indices (I, J,…) will deine coarse scale nodes. he coarse scale is deined to be ɶ(X α ) = u

∑N d α I

In Equations 22.95 and 22.96, M A is a diagonal matrix with the atomic masses on the diagonal, and N is a matrix containing the values of the FE shape functions evaluated at all the atomic positions. In general, the size of N is Na1 × Nn1, where Nn1 is the number of FE nodes whose support contains an atomic position, and Na1 is the total number of atoms. he ine scale u′ can thus be written as

J=

∑ α

⎛ mα ⎜ u α − ⎝

∑ I

⎞ N wI⎟ ⎠

2

α I

(22.94)

where mα is the atomic mass of an atom α wI are temporary nodal (coarse scale) degrees of freedom It should be emphasized that Equation 22.94 is only one of many possible ways to dei ne an error metric. In order to solve for w, the error is minimized with respect to w, yielding the following result: w = M −1N T M A u

(22.95)

where the coarse scale mass matrix M is deined as M = N TMA N

(22.96)

u′ = u − Pu

(22.98)

where the projection matrix P is deined to be P = NM −1N T M A

(22.99)

he total displacement u α can thus be written as the sum of the coarse and ine scales as u = Nd + u − Pu

I

Here, NIα = NI(X α) is the shape function of node I evaluated at the initial atomic position. Xα , and dI are the FE nodal displacements associated with node I. he ine scale in the bridging scale decomposition is simply that part of the total displacement that the coarse scale cannot represent. hus, the ine scale is deined to be the projection of the total displacement u onto the FE basis functions subtracted from the total solution u. We will select this projection operator to minimize the mass-weighted square of the i ne scale, which we call J and can be written as

(22.97)

or

(22.93)

I

u′ = u − Nw

(22.100)

he inal term in the above equation is called the bridging scale. It is the part of the solution that must be removed from the total displacement so that a complete separation of scales is achieved, i.e., the coarse and ine scales are orthogonal to each other. his bridging scale approach was i rst used by Liu et al. (1997) to enrich the FE method with meshfree shape functions. Wagner and Liu (2001) used this approach to consistently apply essential boundary conditions in meshfree simulations. Zhang et al. (2002) applied the bridging scale in luid dynamics simulations. Qian et al. (2004) recently used the bridging scale in quasistatic simulations of carbon nanotube buckling. he bridging scale was also used in conjunction with a multiscale constitutive law to simulate strain localization by Kadowaki and Liu (2004). Now that the details of the bridging scale have been laid out, some comments are in order. In Equation 22.94, the fact that an error measure was deined implies that uα is the “exact” solution to the problem. In our case, the atomistic simulation method we choose to be our “exact” solution is MD. Ater determining that the MD displacements shall be referred to by the variable q, Equation 22.94 can be rewritten as

J=

∑ α

⎛ mα ⎜ q α − ⎝

∑ I

⎞ N wI ⎟ ⎠ α I

2

(22.101)

where the MD displacements q now take the place of the total displacements u. he equation for the ine scale u′ can now be rewritten as u′ = q − Pq

(22.102)

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Handbook of Nanophysics: Principles and Methods

he ine scale is now clearly deined to be the diference between the MD solution and its projection onto a predetermined coarse scale basis space. his implies that the ine scale can thus be interpreted as a built-in error estimator to the quality of the coarse scale approximation. Finally, the equation for the total displacement u can be rewritten as u = Nd + q − Pq

(22.103)

22.3.5.1 Multiscale Equations of Motion he next step in the multiscale process is to derive the coupled MD and FE equations of motion. his is done by irst constructing a Lagrangian L, which is deined to be the kinetic energy minus the potential energy L(u, uɺ ) = K(uɺ ) − V (u)

(22.104)

Ignoring external forces, Equation 22.104 can be written as 1 L(u, uɺ ) = uɺ T M A uɺ − U (u) 2

(22.105)

where U(u) is the interatomic potential energy. Diferentiating the total displacement u in Equation 22.103 with respect to time gives uɺ = Ndɺ + Qqɺ

(22.106)

where the complimentary projection operator Q ≡ I − P. Substituting Equation 22.106 into the Lagrangian equation (22.105) gives 1 1 L(d, dɺ , q, qɺ ) = dɺ T Mdɺ + qɺ TMqɺ − U (d, q) 2 2

(22.107)

where the i ne scale mass matrix M is dei ned to be M = Q TM A . One elegant feature of Equation 22.107 is that the total kinetic energy has been decomposed into the sum of the coarse scale kinetic energy plus the fine scale kinetic energy. he multiscale equations of motion are obtained from the Lagrangian by following the Lagrange equations: d ⎛ ∂L ⎞ ∂L − =0 dt ⎜⎝ ∂dɺ ⎟⎠ ∂d

(22.108)

d ⎛ ∂L ⎞ ∂L =0 ⎜ ⎟− dt ⎝ ∂qɺ ⎠ ∂q

(22.109)

Substituting the Lagrangian (22.107) into (22.108) and (22.109) gives ɺɺ= − ∂U (d,q) Md ∂d

(22.110)

ɺɺ = − ∂U (d, q) Mq ∂q

(22.111)

Equations 22.110 and 22.111 are coupled through the derivative of the potential energy U, which can be expressed as functions of the interatomic force f as f =−

∂U (u) ∂u

(22.112)

Expanding the right-hand sides of Equations 22.110 and 22.111 with a chain rule and using Equation 22.112 together with Equation 22.103 gives ɺɺ= ∂U ∂u = N Tf Md ∂u ∂d

(22.113)

∂U ∂u = Q Tf ∂u ∂q

(22.114)

ɺɺ = Mq

Using the fact that M = QTM A, Equation 22.114 can be rewritten as ɺɺ = Q Tf Q TM Aq

(22.115)

Because Q can be proven to be a singular matrix (Wagner and Liu 2003), there are many unique solutions to Equation 22.115. However, one solution which does satisfy Equation 22.115 and is beneicial to us is (including the coarse scale equation of motion): ɺɺ = f (q) M Aq

(22.116)

ɺɺ = N Tf (u) Md

(22.117)

Now that the coupled multiple scale equations of motion have been derived, we make some relevant comments: 1. he ine scale equation of motion (Equation 22.116) is simply the MD equation of motion. herefore, a standard MD solver can be used to obtain the MD displacements q, while the MD forces f can be found by using any relevant potential energy function. 2. he coarse scale equation of motion (Equation 22.117) is simply the FE momentum equation. herefore, we can use standard FE methods to ind the solution to Equation 22.117, while noting that the FE mass matrix M is deined to be a consistent mass matrix.

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Computational Nanomechanics

3. he coupling between the two equations is through the coarse scale internal force NTf(u), which is a direct function of the MD internal force f. In the region in which MD exists, the coarse scale force is calculated by interpolating the MD force using the FE shape functions N. In the region in which MD has been eliminated, the coarse scale force can be calculated in multiple ways. he elimination of unwanted MD degrees of freedom is discussed in Section 22.3.6. 4. We note that the total solution u satisies the same equation of motion as q, i.e., ɺɺ = f M Au

5.

6.

7.

8.

(22.118)

his result is due to the fact that q and u satisfy the same initial conditions, and will be utilized in deriving the boundary conditions on the MD simulation in a later section. Because of the equality of q and u, it would appear that solving the FE equation of motion is unnecessary, since the coarse scale can be calculated directly as the projection of q, i.e., Nd = Pq. However, because the goal is to eliminate the ine scale from large portions of the domain, the MD displacements q are not deined over the entire domain, and thus it is not possible to calculate the coarse scale solution everywhere via direct projection of the MD displacements. hus, the solution of the FE equation of motion everywhere ensures a continuous coarse scale displacement ield. Due to the Kronecker delta property of the FE shape functions, for the case in which the FE nodal positions correspond exactly to the MD atomic positions, the FE equation of motion (Equation 22.117) converges to the MD equation of motion (Equation 22.116). he FE equation of motion is redundant for the case in which the MD and FE regions both exist everywhere in the domain, because the FE equation of motion is simply an approximation to the MD equation of motion, with the quality of the approximation controlled by the FE shape functions N. his redundancy will be removed by eliminating the ine scale from large portions of the domain. We note that the right-hand side of Equation 22.116 constitutes an approximation; the internal force f should be a function of the total displacement u. We utilize the MD displacements q for two reasons. he irst reason, as stated above, is the equality of q and u. he second reason relates to computational eiciency, as determining u at each MD time step requires the calculation of the coarse scale solution Nd, which would defeat the purpose of keeping a coarse FE mesh over the entire domain.

Because of the redundance of the FE equation of motion, one also requires to eliminate the MD region from a large portion of the domain, such that the redundance of the FE equation of motion is removed. his elimination techniques are discussed

by Karpov et al. (2005, 2007) and Wagner et al. (2004). Once the redundancy is removed, the coarse scale exists in large portions of the domain from which the i ne scale MD is eliminated. Furthermore, the coarse scale variables are allowed to inluence the motion of the ine scale. hus, a two-way coarse scale/ine scale coupling can be achieved at the MD boundary where information originating from the coarse scale can act as a boundary condition for the ine scale.

22.3.6 Predictive Multiresolution Continuum Method Predicting microstructure-property relationships in engineering materials via direct simulation of the underlying micromechanics remains an elusive goal due to the massive disparities in length and timescales; huge structures such as bridges may fail ater decades of operation due to nanoscale fracture events, which occur at a micro/nano second timescale. In this section, we outline a multiscale method by Liu and McVeigh (2008), McVeigh and Liu (2008), and McVeigh et al. (2006), which predicts macroscale mechanical deformation in terms of the underlying evolving microstructure. his type of approach usually involves coupling between simulations at diferent scales. If information is passed from one simulation (scale) to another in one direction only, it is known as a hierarchical approach. his approach is diferent to the concurrent approaches, such as bridging scale or Section 22.3.5, where the information is exchanged in both directions, and the simulations must be performed simultaneously at all scales. An afordable multiresolution theory can be proposed that captures the key underlying micromechanics while remaining in the context of continuum mechanics. Here, deformation at a continuum point is decomposed into the homogeneous deformation and a set of inhomogeneous deformations; each inhomogeneous measure is associated with a particular characteristic scale of inhomogeneous deformation in the microstructure. h is introduces a set of microstresses in the governing equations that represent a resistance to inhomogeneous deformation. 22.3.6.1 Multiresolution Stress and Deformation Measures A multiscale, also micromorphic, material is one which contains discrete microstructural constituents at N scales of interest. For example, a material may contain weakly bonded microscale particles and nanoscale dislocations. In that example, three scales are of interest: the macroscale, the microscale, and the nanoscale. he material behavior of each scale will difer considerably. A model which hopes to simulate the structure–property relationship of a material must capture the micromechanics at each distinct scale. A general multiresolution framework is thus dei ned as one in which (1) the material structure and the deformation ield are resolved at each scale of interest; (2) the resulting internal power is a multiield expression with contributions from the average deformation at each scale i.e., the overall properties depend on the average deformation at each scale; (3) the deformation behavior at each scale is found by examining the

22-24

Handbook of Nanophysics: Principles and Methods σ1, L1 σ2, L2

gradient of the relative microvelocity can be considered constant within the cell, i.e., the relative micro velocity varies linearly, v 2 (x2 ) = L2 ⋅ x2

(22.120)

Macro RVE

x1 Macro unit cell

FIGURE 22.15 A macro RVE and a unit cell and their respective stress and rate of deformation measures.

micromechanics at each scale; and (4) the constitutive relations can be developed at each scale. Two-scale material: We begin by deriving the internal power of a simple two-scale material containing a metal matrix with microscale inclusions or voids. One example is the porous material shown in Figure 22.15. In such a material, microscale deformation is controlled by the growth of voids. Void growth is a volumetric process and a function of the hydrostatic stress only. It is reasonable to assume that the volumetric part of the microde formation plays a prominent role in the microscale deformation of such materials. Here, the macroscale and microscale behavior are of interest. herefore, the goal is to resolve the material structure and deformation to the macro- and microscales. he general equations for N scales will be discussed next. In a conventional continuum simulation, homogenized constitutive behavior at a point is predetermined by inding the average behavior of a material sample. his can be achieved through experimental mechanical testing. Alternatively, for a multicomponent material with known individual component properties, computational simulations can be performed on a sample called a representative volume element (RVE). h is is directly analogous to an experimental test. To determine the inluence of the subscales, additional deformation ields corresponding to each scale are introduced. h is is achieved by mathematically decomposing the position and velocity within a representative volume element into components associated with each scale of interest. Figure 22.15 shows the mathematical decomposition for a simple two-scale micromorphic material along with a physical interpretation. For such a case, the position and velocity of a material point becomes x = x1 + x2 ,

v = v1 + v 2

he Figure 22.15 represents a macro RVE with an average macro stress, σ1 and macro rate of deformation, L1. hese are the average macro stress and rate of deformation over a macroscopic RVE of the material, which are constant within the micro unit cell. By zooming into a micro unit cell in the RVE, we can examine the total micro stress, σ2 and rate of deformation, L2 associated with a micro unit cell. hese will difer from the corresponding macro measures as long as the RVE is not homogeneous. he relative rate of microdeformation associated with a micro unit cell is deined as (L2 − L1). he micro stress associated with a micro unit cell is denoted β2. he internal power of a unit cell can be provided as a resultant of the contributions from the macroscopic rate of deformation, L1, and the rate of relative microdeformation, (L2 − L1), pint = σ1 : L1 + β2 : (L2 − L1 )

he micro-stress associated with a unit cell, β2, is deined as the power conjugate of the relative rate of microdeformation. he micro-stress is therefore constant within the micro unit cell. he value β2 is the measure of a stress ield’s tendency to produce a strain gradient in the averaging domain. An average value of the internal power (at a discrete position x) is required for use within the mathematical multiscale framework. h is is determined numerically by averaging the internal power over a micro domain of inluence. his domain is chosen to be representative of the range of interactions between the microstructural features at the microscale. In Figure 22.16, the micro domain of inluence (DOI) is chosen to include nearest-neighbor interactions between the voids.

ΩI2

L2 Linear variation to L2

(22.119)

where v1 is the macrovelocity v2 is the relative microvelocity he macro RVE incorporates a microstructural feature as an inclusion. hus, the unit cell is deined at each scale so that the

(22.121)

x1 l2

FIGURE 22.16 Domain of inluence chosen at the microscale, where the rate of microdeformation varies linearly in space.

22-25

Computational Nanomechanics

he average internal power is given by averaging over the micro DOI: pint (x) =

1 VI2

∫p

int

(x + y)dΩ2I

of deformation L2 is equal to the total macro rate of deformation L1 and expression (22.124) reduces to give the average internal power of a conventional homogenized continuum:

(22.122)

pint = σ1 : L1

Ω2I

where an over bar represents an average value and _ y is simply an integration position variable within the DOI. pint is given by (22.121). An expression for the variation of the rate of microdeformation within the DOI can be obtained through a Taylor expansion. Truncating the i rst-order terms, we get L2 (x + y) = L2 (x) + y ⋅ ∇L2 (x)

(22.123)

where _ L 2(x) is the average microdeformation rate for the micro DOI ∇L2 (x ) is the average gradient of the rate of microdeformation over the micro DOI he linear approximation in Equation 22.123 is justiied in Figure 22.16 showing the variation in total microdeformation along a micro DOI. he average internal power for a two-scale micromorphic material gives 2

pint = σ1 : L1 + β 2 : (L2 − L1 ) + β : ΔL2

he external power can similarly be derived in terms of average measures. By applying the principle of virtual power and using the divergence theorem, the resulting strong form gives rise to a coupled multi-ield system of governing diferential equations. his forms the basis of the mathematical model used in multiscale micromorphic FE simulations. he generalized stress and deformation tensors can be dei ned as ∑ = ⎢⎡σ1 ⎣

β2

β 2 ⎥⎤ , ° = ⎢⎡L1 ⎣ ⎦

Equation 22.124 includes the contributions to the power density from the macro and microdeformation rates. It also includes the gradient of these rates. his gradient term arises from the variation in the microdeformation within the domain of inluence. Indeed, the DOI should be chosen such that this variation can be considered linear and the irst-order approximation (22.123) holds within the micro DOI. Physically, the gradient arises due to the interaction between microstructural features, as shown in Figure 22.16. Use of a DOI implicitly imbeds a length scale into the mathematical framework at the microscale, which is closely related to the size of the smallest microstructural feature at that scale. Not only does this make the model more physically realistic, it also eliminates the pathological mesh dependency associated with conventional continuum approaches. Note that in a conventional continuum approach, where only the homogenized macroscale behavior is considered, the macro domain of inluence coincides with the macro representative volume element (RVE) shown in Figure 22.15. he total micro rate

1 ⎡ 2 ⎤ ⎣L − L ⎦

∇L2 ⎥⎤ (22.126) ⎦

hese are related through an elasto-plastic micromorphic multiscale constitutive law. N-scale material: he multiresolution internal power, stress and strain tensors have been developed and generalized to N scales of interest by Vernerey et al. (2007, 2008). he N-scale internal power density is given by N

pint = σ1 : L1 +

∑(β

α

: (Lα − L1) + β α ⋮∇Lα )

(22.127)

α= 2

(22.124)

where _ β is the average of the relative micro-stress over the domain of inluence β is the _ average of the irst moment of the micro stress, i.e., y · β, over the domain of inluence

(22.125)

where we denoted the coarsest and inest length scales as the 1st and Nth, respectively. he generalized stress and deformation measures can be deined as ∑ = ⎢⎡σ1 ⎣

° = ⎡⎣L1

β2

[L2 − L1 ]

β2

β3

β3

…

βN

β N ⎥⎤ ⎦

(22.128)

∇L2 ⎡⎣L3 − L1 ⎤⎦ ∇L3 ⋯ ⎡⎣LN − L1 ⎤⎦ ∇LN ⎤⎦ (22.129)

In concise notations, the internal power density (Equation 22.127) can be written as pint = Σ ⋅ °

(22.130)

For FE implementation, the principle of virtual power can be applied and discretized as usual. he generalized stress Σ and generalized deformation rate Υ tensors replace the standard stress and strain tensors. Hence, the multiresolution approach can be implemented in a standard FE code with increased degrees of freedom.

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Handbook of Nanophysics: Principles and Methods

22.3.6.2 Multiresolution Constitutive Laws In a multiresolution FE analysis, a generalized constitutive relation is required to relate the generalized stress to the generalized deformation. he irst step is to derive individual constitutive relationships at each scale by examining the micromechanics at each scale. he individual constitutive relationships at each scale can then be combined to create a generalized constitutive relation: Σ = Cep : °

(22.131)

where C ep is a generalized elastic–plastic tangent modulus. Analytical derivation of a generalized constitutive relation, and hence determination of C ep may be possible if the mechanics are simple and well understood. h is approach was demonstrated for a polycrystalline material and a granular material by McVeigh et al. (2006). For more complex problems involving more than two scales, a multiresolution cell modeling approach can be used. In a manner similar to the hierarchical approach, a constitutive relationship can be determined at the lowest scale of interest irst. his relationship is used as an input when inding the constitutive behavior at the next largest scale and so on. he average behavior at each scale is determined by examining the average response over the averaging domain Ωα , a domain of inluence at the scale α. At the macroscale, the averaging domain is simply the RVE. A generalized constitutive law is then formed based on the scale-speciic behavior. his technique is applied to design of a bio-inspired self-healing material and other advanced materials systems. Potentially, the cell modeling approach can be enriched through incorporation of data from atomistic modeling of interfacial bonding strengths between particles of various sizes and matrix materials. We point out that one can utilize these techniques to resolve also the inverse problem, inding the way to design the microstructure of materials on the basis of desired macroscopic properties. he multiresolution continuum approach can predict the evolving scale of deformation due to the changing microstructure without having to perform largescale detailed microstructure-level simulations; only limited RVE scale microstructural simulations are required to calibrate the constitutive relationships. he ability to predict the scale of deformation is crucial in order to compute the correct macroscale performance.

22.4 Manipulation of Nanoparticles and Biomolecules his section provides an example of a hybrid (multiphysics) approach of bio-nanomechanics, which is applicable to the manipulation of nanoparticles and biomolecules by electric ield and surface tension. his class of problems calls for a hybrid mathematical description of the solid, liquid, and electric ield components of the system. Electric ield has become one of the most widely used tools for manipulating cells, biomolecules,

and nanoscale particles in microluidic devices. Here, the 3D dynamic assembly of nanowires on various microelectrodes under dielectrophoretic force is presented with discussion on capillary action and electroosmosis efects in the manipulation. he various approaches to manipulate the small-scale materials are addressed both numerically and experimentally. For successful prediction and analysis on nanoscale, a hierarchical and multiscale scheme for modeling luid transportation in nanochannels is suggested. he results show that the combined efects of electric ield and capillary action–induced forces are crucial for precise control over nanoscale materials.

22.4.1 Introduction Transport, alignment, and assembly of nano- and biomaterials in liquid phase are drawing more attention with the rapid development of small-scale electromechanical devices. he current trend toward high-performance microsystems can have an impact on a broad range of applications such as medical devices, fuel cells, communication systems, and biological or chemical sensors. To improve the performance of such devices, controlled manipulation of the nano- and biomaterials involved is the key issue because the materials having speciic functions need to be assembled in a consistent manner with the design. he major challenge for the manipulation lies in the small length scale of nano- and biomaterials, which limits the efective observation either by naked eyes or by conventional optical microscopes. Electron microscopes are powerful tools for observation that is also limited by environmental conditions including high vacuum, material conditions, material size, etc. Furthermore, in situ monitoring of nanostructured materials during the manipulation and assembly is more challenging than observation ater the assembly because of the assembly materials in liquid environment. Recently, rigorous computational methods have been proposed to model, analyze, and predict nanoscale processes and behaviors in order to augment and enhance experiments. hese modeling technologies have demonstrated the ability to investigate the behavior of bulk nanostructured materials (Liu et al. 2004b, 2005). hese methods enable the precise prediction of material behavior in multiple scales, which is crucial to shorten the incubation process for manufacturing nano- and biomaterials. hese methods are also essential for quickly verifying a new idea on nanomaterials requiring an enormous efort in experiment. Various mechanisms have been proposed in recent years to assemble and pattern nano- and biomaterials. Among them, electric-ield-induced manipulation has been demonstrated by changing the amplitude of an electric potential and its frequency (Jones 1995). he simple working principles and convenient experimental setups involving electric forces have been successfully applied to assemble nano- and biomaterials (Chen et al. 2001). he major efects induced by an electric ield are dielectrophoretic force, electroosmotic low, and electrothermal efect. he dielectrophoretic force arises from induced dipole moments on a particle embedded in a nonuniform electric ield. he electroosmosis low is driven by the electrostatic force applied to the

Computational Nanomechanics

charged double layer on the surfaces of the electrodes. he electric ield can also increase the temperature of the luid through Joule heating. However, under most conditions discussed in this chapter, the increase of temperature due to Joule heating is far less than 1 K, thus the electrothermal efect is negligible. Among the major forces induced by an electric ield, the electrophoretic force gained more attention due to its successful applications to gel electrophoresis for separating nucleic acids and proteins (Brisson and Tilton 2003, Trau et al. 1997). he dielectrophoretic force was introduced in 1951 by Pohl (1978) and was theoretically formulated by Jones (1995). he dielectrophoretic force was used to attract and repel particles as designed due to the diference in permittivity. Besides the attraction or repulsion, the manipulation of lexible biopolymers or cells has been of greater interest. Zimmermann et al. used a high-amplitude AC electric ield to manipulate mammalian cells (Zimmermann et al. 2000). Recently, more precise assembly methods have been proposed. Washizu et al. (2003) used the electroosmotic low to immobilize and stretch DNA molecules. Chung and Lee (2003) and Chung et al. (2004) assembled multiwalled carbon nanotubes and DNA molecules by combining an AC with DC electric ield. hese technologies have allowed for the control and deposition of individual nanoscale components in micro/nano systems. During the manipulation using an electric ield, most nanomaterials are processed in liquid phase, released from solution and used in liquid and gas phases. In the transition from solution to gas phase, both capillary action and surface tension inevitably afect the inal stage of the nanomaterials. In fact, the force induced by the capillary action is usually a few orders of magnitude larger than that induced by electric ield, especially in micro/nanoscale dimension. he capillary action caused by adhesive intermolecular force is dominant in the small dimension due to the relatively small inertia. h is explains why small insects can loat on water and sometimes be trapped in a small drop. he dexterous control of the capillary action in material processing and manufacturing is critical regardless of its resultant efects. In spite of such a dominant efect, the capillary action has not been paid much attention possibly because it is not easy to be controlled in nanoscale material processing. hus, how to utilize or minimize capillary action is the main concern in nano- and biomaterial assembly, which may also provide an ample opportunity for the generation of new structures. Wu and Whitesides (2001) and Lu et al. (2001) have utilized the surface tension due to water/air interface to assemble microscale polystyrene ball on a patterned surface. Manoharan et al. (2003), Lauga and Brenner (2004) reported the experimental and modeling results on the evaporation-induced assembly of colloidal particles. It was found that the colloidal particles absorbed at the interface of liquid droplets were arranged into a uniform pattern during evaporation. he creation of the unique packing was ascribed to geometrical constraints during the drying. Combination of an electric ield and capillary action can create more interesting results. Single-walled carbon nanotube (SWCNT) bundles have been formed using both an AC electric ield and capillary action by

22-27

Tang et al. (2003, 2004, 2005). he dielectrophoretic force due to the AC ield was applied to attract SWCNTs near a tungsten (W) tip. In the experiment, the dielectrophoretic force directed the motion of nanoparticles along the orientation of the ield. Subsequently, the capillary action formed the ibril shape of the SWCNTs. To move toward the next-generation assembly methods, a comprehensive understanding of the underlying physics is crucial, but is yet to be fully realized due to the complexity of the assembly processes at such a small scale. here have been various numerical studies in literature on motions of liquid or particles under an electric ield. Ramos et al. (1998) have reviewed the motion of particles in a suspension when subjected to an AC electric ield. Wan et al. (2003) have studied the dynamics of a charged particle in a luid via lattice Boltzmann simulation. Dimaki et al. (2004) have used point dipole approximation to calculate the dielectrophoretic force and simulate the trapping process of a carbon nanotube on microelectrodes. In these studies, the solid particles are assumed to have no inluence on local electric ield, thus behave like a point in the electric ield, which is accurate only when the particles are small enough or far from the electrodes. To overcome these limitations, Aubry and Singh (2006a,b); Kadaksham et al. (2004, 2005, 2006); and Singh et al. (2005) have used distributed Lagrangian method and Maxwell stress tensor to study the dielectrophoretic assembly of rigid spherical particles in an electric ield cage. It is demonstrated that the point dipole approximation is not valid when the particle size is close to the cage size, thus has to be replaced by the general Maxwell stress tensor method. Furthermore, Liu et al. (2006a,b) have studied the dielectrophoretic assembly of nanowires and the electrodeformation of cells through coupled electrokinetics and immersed i nite element method (IFEM) (Liu et al. 2006b, Wang and Liu 2004, Zhang et al. 2004). Electric ield has also been used in liquid transportation in micro/nano channels. Patankar and Hu (1998) have used FE methods to calculate the continuum electroosmotic low in a 2D channel. Qiao and Aluru (2002, 2003, 2004, 2005) have studied the electroosmotic low in nanochannels by MD simulation. Similar molecular simulation of electroosmotic transportation in a charged nanopore has been presented by hompson (2003). Currently, a complete theory or model is yet to be available for the three-dimensional dynamic assembly processes for multiple, arbitrary shaped nanomaterials under complex environments such as electric ields, surface tension, and moving boundaries. In this section, we discuss the fundamental physics involved in the assembly process and how ideas motivated by the immersed boundary method (Peskin 2002) can be utilized for the modeling of the manipulation process. It provides an excellent demonstration of the broad-range capabilities and applications of computational methods to analyze and predict the performance of electromechanical devices at micrometer to nanometer scale. We i rst give a review of the electrohydrodynamic coupling approach. h is coupling scheme is applied to model nanowire assembly and viruses sorting. Next, we discuss the liquid/ion transportation in nanochannels to illustrate the consideration of both electric ield and luid low. By comparing

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Handbook of Nanophysics: Principles and Methods

the analytical and computational models to experimental results, it is demonstrated that modeling can be combined with experimental work to improve the accuracy, yield, and control of the assembly process.

he ield strength is determined by the electric potential φ that determines the voltage VAB between two points A and B: B

∫

E = −∇ϕ, ϕ A − ϕ B ≡ VAB = E ⋅ dl

(22.136)

A

22.4.2 Electrohydrodynamic Coupling Electric ields are widely used to manipulate biological objects such as cells or bioibros. It is important to incorporate the electric ield into the luid-structure interaction problem, thus solving an electrohydrodynamic problem. A typical electrohydrodynamic problem involves three components: the liquid domain, the solid structure immersed in the liquid, and an external electrostatic ield. he structure is responsive to the electric ield due to induction of an electric dipole moment. he liquid remains electrically neutral and does not respond to the electric ield. In this section, we discuss electrohydrodynamic coupling that utilizes the IFEM formulation of Section 22.4.3. 22.4.2.1 Maxwell Equations he electrostatic ield in a continuous media or structure is governed by a system of time-independent Maxwell equations that can be written in the integral form as follows:

∫ E ⋅ dl = 0 ∫ D ⋅ dS = 4πQ Q = ρdV ∫

he electric potential satisies the Poisson equation ∇2ϕ(r) = −

ϕ(r) =

1 ρ(r′) dV ′ ε | r − r′ |

∫

Note that the electric potential φ(r) is a special case of the general one-body potential V1(r) discussed in Section 22.2.2.1 of this chapter; see Equation 22.15. For simple systems, such as point charge, spherical charge, charged straight line, halfspace, etc., the function φ(r) is known in closed form, e.g., Benenson et al. (2002). he vector of electric displacements D represents the quantity of charge ΔQ per element ΔA displaced by electrostatic induction. he magnitude of this vector is equal to the surface charge density

ΔA → 0

ΔQ dQ = ΔA dA

(22.133)

In case of a homogeneous isotropic media, one obtains D = εE

(22.134)

∫ D ⋅ dS = D S

(22.140)

S0

In this case, the second equation of the system (22.132) reduces to an algebraic form allowing straightforward evaluation of the vector D. 22.4.2.2 Electromanipulation

where ε is the electric permittivity of the media. he vector E is called the intensity of the electric ield, or ield strength, and it serves as the force characteristic of the electric ield. In particular, for a point charge q, the electrostatic force is given by F = Eq

(22.139)

he second equation in (22.132) is also called Gauss theorem. h is equation is particularly convenient in cases where the symmetry of the system allows evaluation of the surface integral for this equation in closed form. Note that if there is a i nite surface S 0 at which the normal vector dS and vector D are coplanar, and |D| = const, then the lux of vector D through this surface n 0

dp P= dV

(22.138)

V

D = lim

Here, the continuum structure occupies physical volume V, and carries distributed charge of density ρ(r); Q is the total volume charge of the structure. Other quantities in the above equations characterize the electric ield and charge distributions: the vector E is a measure of intensity of the ield, D is the vector of electric displacement, and P the polarization vector deined as a dipole moment, dp, of a unit volume:

(22.137)

whose solution is written in the form

(22.132)

V

4π ρ(r) ε

(22.135)

Experimental techniques used for the manipulation of particles and small-scale structures are generally referred to as electromanipulation, as well as nanomanipulation, when associated with directed motion of nanoscale objects. A general list of factors that can be involved in electromanipulation and their applicable conditions are summarized in Table 22.1.

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Computational Nanomechanics TABLE 22.1

A widely used expression for the time-averaged DEP force on a particle is given as (Jones 1995)

Mechanisms of Electromanipulation

Mechanism

Applicable Condition

Electrophoresis (EP) Dielectrophoresis (DEP) Electroosmosis low Drag force Brownian motion

DC or low frequency AC AC DC or low frequency AC Viscous luid Nano/microscale particles

22.4.2.2.1 Electrophoresis (EP) he irst mechanism of electromanipulation, electrophoresis, is based on directed motion of suspended charged particles in a nonconductive liquid under the action of external electric ields. he driving force of electrophoresis is, in principle, the electrostatic force given by the expression (22.135). 22.4.2.2.2 Dielectrophoresis (DEP) In contrast to electrophoresis, the dielectrophoresis (DEP) utilizes movement of uncharged, i.e., electrically neutral structures caused by a spatially nonuniform electrical ield. he structure becomes polarized when immersed into the electric ield. DEP only arises when the structure and the surrounding media, typically, a nonconductive gas or liquid, have diferent polarizabilities. If the structure is more polarizable compared to the surrounding media, it will be pulled toward regions of stronger ield; this efect is called the positive DEP. Otherwise, the structure is repelled toward regions of weaker ield; this is known as the negative DEP. One commonly known demonstration of the positive DEP is the attraction of small pieces of paper to a charged plastic comb or stick. he general concept of the positive DEP is illustrated in Figure 22.17. he driving force of dielectrophoresis results from a dipole moment induced in the structure when it is immersed into an electric ield. If the electric ield is inhomogeneous, the ield strength and thus distribution of the electrostatic force acting on each part of the structure is not uniform; that leads to a relative motion of the structure in the medium. he force exerted by an electric ield E on a dipole with dipole moment p is given generally by Fdep = (p ⋅ ∇)E

(22.141)

F dep = Γ ⋅ ε1 Re {K f}∇ | E |2.

(22.142)

where Γ is a parameter that depends on the particle shape and size ε1 is the real part of the permittivity of the medium K f is a factor that depends on the complex permittivities of both the particle and the medium ∇|E|2 is the gradient of the energy density of the electric ield For a sphere with a radius a, Γ = 2πa3, Kf = (ε2* − ε1*)/(ε2* + 2ε1*) (called the Clausius–Mossotti factor). For a cylinder with a diameter r and a length l, Γ = πr 2l/6, K f = (ε*1 − ε*1 )/ε1*. he frequencydependent complex permittivities shown with the asterisk are expressed by the complex combination of conductivity σ, permittivity ε, and electric ield frequency ω as ε*1 = ε1 − jσ1/ω, and ε*1 = ε2 − jσ2/ω, where j = −1, and the indices 1 and 2 refer to the medium and the particle, respectively. For an arbitrarily shaped solid structure, the dielectrophoresis force can be computed as a surface or volume integral,

∫

F dep = (σ M ⋅ n)dA =

∫ ∇⋅ σ

M

dΩ

(22.143)

Ωs

Γ

where σM is the Maxwell stress tensor 1 σ M = ε1EE − ε1E ⋅ EI 2

(22.144)

22.4.2.2.3 Electroosmotic Flow he electroosmotic low, or electroosmosis, is driven by the electric static force applied onto the charged double layer, see Figure 22.18. Electroosmosis low can be induced by DC electric ield or by low-frequency AC electric ield. Within the fluid-structure interaction approach, electroosmosis is treated as a slip boundary condition for the fluid. Also, since the Debye layer, the layer close to the wall

Electroosmotic flow

Solid substrate

FIGURE 22.17 Positive dielectrophoresis. Positive and negative charges polarized in the structure are equal. he structure will rotate clockwise and move let to the area of stronger ield.

FIGURE 22.18 channel.

Illustration of electroosmosis developed within a

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Handbook of Nanophysics: Principles and Methods

where the velocity is varying, is only a few nanometers, only the steady velocity is taken into account, Solomentsev et al. (1997), v=−

εψ 0E μ

(22.145)

where ψ0 is the zeta potential (the electric potential at the slipping plane close to the solid surface) μ and ε are the viscosity and permittivity of the medium, respectively he Brownian force induced by thermal luctuations will inluence the motion of nanoscale particles. he approach described in the work by Sharma and Patankar (2004) on Brownian motion of rigid particles can be used to capture the thermal motion of complex-shaped objects without using approximations for the viscous drag on these objects. 22.4.2.2.4 Fluid-Structure Interaction: Governing Equations he coupled electrohydrodynamic equation of motion, Liu and Iqbal (2009), can be written in the context of luid-structure interaction to give two coupled governing equations: (1) a luid equation with a luid-structure interaction force and (2) a solid equation (MD, FEM, or rigid solid). he luid equation with luid-structure interaction takes the form ρf vɺ = ∇ ⋅ σ f + f FSI

(22.146)

he interaction force, representing the solid equation, reads f FSI = −(ρs − ρf )vɺ s + ∇ ⋅ (σs − σ f ) + Fext + Fe + Fdep + F c (22.147) where Fext, Fe, Fdep, and Fc are the external, electrostatic (electrophoresis), dielectrophoresis, and solid–solid interaction forces, respectively. he external force is usually the gravity force. Expressions for the electrostatic force and dielectrophoresis force are given in Equations 22.135 and 22.143. he force of interaction between two charged solid surfaces is evaluated by integrating the Coulomb potential (22.23). In this formulation, as well as in the applications considered below, thermal and Brownian motion efects are ignored.

(a)

(b)

In this way, the solid, luid, and electrokinetic equations are coupled together. In the current simulations, the electrokinetic equation and solid/luid motion equation are solved iteratively, i.e., a semi-static approach. Since the transition time of the electric ield is much shorter than the characteristic time of the solid/ luid motion, this iterative approach is reasonable.

22.4.3 Nanostructure Assembly Driven by Electric Field and Fluid Flow In recent years, assembly of nanoparticles has becomes a crucial step in many bio/MEMS devices. he assembled pattern largely depends on the electric ield strength, electrode geometry, and electric properties of the particles. In this section, the electrohydrodynamic coupling, discussed in Section 22.4.2, is used to explore the dynamic process of nanowire assembly between microelectrodes. he assembly of nanoparticle nanowires by an electric ield is mainly controlled by dielectrophoretic forces, and has been investigated both numerically and experimentally, e.g., Liu et al. (2006b, 2007, 2008). Such an assembly technique has been improved recently by introducing luid low in assembly, thus taking advantages from both electric ield and luid low. As an example, an interesting phenomenon under the combined efect of luid low and electric ield, pivoting of a nanowire during assembly, is presented here. In the experiment, Au electrodes are patterned on 130 nm-thick thermally oxidized silicon wafer by photolithography. he luid channel is made of polydimethylsiloxane (PDMS), Dow Corning Corp. It is bonded to the electrodes by using stamp-andstick bonding technique (Satyanarayana et al. 2005). he channel cross section is 500 μm wide and 40 μm high. SiC nanowires (Advanced Composite Materials Corporation, Greer, SC) used in the experiment are 1–100 μm in length and 300–500 nm in diameters. he concentration of nanowire solution is 5.0 μg/mL in dimethylformamide (DMF). he solution is placed in the inlet of the luidic device and the low is controlled by a syringe pump (Pump 11 pico plus, Harvard Apparatus). An AC ield (0.5 Vpp, 5 MHz) is applied for the assembly of nanowires. he assembly process was recorded by a video camera (DXC-390, Sony Corp.) through an optical microscope. In the experiment, a nanowire is approaching the electrode by luid low, Figure 22.19a, and one end of the nanowire is landed on an edge of the electrode. Ater landing, one end of the nanowire is pivoted and the other end is rotating, Figure 22.19b and c. he simulated pivot process is shown in Figure 22.20, which agrees well with the experimental observation. he details

(c)

(d)

FIGURE 22.19 Alignment of a SiC nanowire (circled) with pivoting process in DMF. (a) Time = 0 s. (b) Time = 1.5 s. (c) Time = 2 s. (d) Time = 3 s. AC voltage: 500 mV at 5 MHz.

22-31

Computational Nanomechanics

(a)

(b)

(c)

(d)

FIGURE 22.20 Pivot simulation: the low is directed from let to right. he nanowire is attracted, pinned at one end, rotated, and oriented to the luid low direction on the electrodes. (a) Time = 0 s. (b) Time = 1 s. (c) Time = 2 s. (d) Time = 3 s. TABLE 22.2 Problem Coniguration for the Pivot Simulation Fluid

29,525 nodes

ρ = 1 g/cm3

μ = 0.01 g cm/s 1,536 nodes

Nanowire ρs = 1 g/cm3

Length = 6 m

Δt = 0.03 s

Diameter = 600 nm

157,079 elements

γf = 0.0056 S/cm

TABLE 22.3 Properties of the hree Virus Types Used in the Simulation of Virus Detection Inovirus

ϵf = 20 ϵ0 6,253 elements

γs = 0.0112 S/cm ϵs = 100 ϵ0 Cap rad. = 300 nm

of the simulation are shown in Table 22.2. It should be noted that the method we proposed is general and applicable to diferent types of particles and mediums. he values of permittivity and conductivity vary largely for diferent types of particles and mediums. Both permittivity and conductivity contribute to the DEP force calculation, which is the one of the most computationally challenging cases demonstrates the capability of this method. 22.4.3.1 Virus Deposition In recent years, lots of so-called lab-on-a-chip devices have been proposed for point-of-care diagnostics and prognostics of various diseases. One important procedure involved in the diagnosis is to selectively separate one type of virus out of a suspension with multiple viruses. Since an electric ield can be easily applied and controlled, individual virus manipulation by electric ield– induced forces has attracted considerable interests. he working principle of selective deposition by electric ield is that the sign of dielectrophoretic force on the particle is determined by the electric properties of the particle and the medium and the electric ield frequency. By applying an AC ield of a speciic frequency, one type of viral particles can be selectively attracted under positive dielectrophoresis. We demonstrate the feasibility of the selection process by modeling the electric deposition of three diferent types of viruses. Suppose a sample solution contains the inovirus, inluenza, and bacteriophage P22. he physical and electric properties of these three viruses (Patolsky et al. 2004) are listed in Table 22.3. he entire virus is assumed to be a homogeneous rigid body. he DEP force versus frequency curve for each individual virus is shown in Figure 22.21. he DEP force on a virus is calculated through the Maxwell stress tensor. he proposed strategy to sort the three kinds of viruses is as follows. First, the frequency indicated by the solid arrow (5 MHz) in Figure 22.21a is chosen to selectively attract inluenza in the irst array of electrodes in

Permittivity (ϵ0) Conductivity (mS/m) Size (nm)

Inluenza

Bacteriophage P22

70

3

30

8

80

3

200 (length)

100 (diameter)

65 (length) 20 (diameter)

our proposed device since only inluenza particles experience positive DEP force. hen, the frequency indicated by the dashed arrow (about 1 MHz) is chosen to attract inovirus in the second array of electrodes. Finally, the frequency indicated by the hollow arrow (about 100 kHz) is chosen to deposit bacteriophage. he simulations for selective deposition of six viruses (two viruses from each type) on three pairs of parallel-rectangularshaped electrodes are shown in Figure 22.21(b–e). he six viruses are initially aligned at the same height of 0.2 μm above the electrode surface. An AC ield of 5 MHz is applied to the irst set of electrode pair. An inlow of 18 μ/s is applied to transport the virus. he low proile of the cross section in the middle of the channel is shown in Figure 22.21f. he electric ield distribution across the electrode pairs is shown in Figure 22.21g. From the electric field distribution, it shows that each electrode pair generates a local electric ield that has little impact on the nearby electrode pairs. he inovirus and bacteriophage are under negative DEP, while the Inluenza is under positive DEP at 5 MHz. hus, only inluenza is trapped exactly in the gap and the other two are transported by the low toward the second electrode pair. On the second electrode pair, when a 1 MHz AC ield is applied, the DEP force on the inovirus is switched to be positive while bacteriophage is still under a negative DEP. hus, only inovirus is attracted on the second electrode pair, while bacteriophage is again transported by the low. On the third electrode pair, when an AC ield of 100 kHz is applied, the Bacteriophage is inally deposited under a positive DEP. hrough these three steps, three diferent groups of viruses are selectively deposited.

22.4.4 Ion and Liquid Transportation in Nanochannels In recent years, nanoscale luidic channels are believed to provide a platform for single molecule detection and evaluation. he transportation of ion species, biomolecules, and chemical

22-32

Polarization factor

Handbook of Nanophysics: Principles and Methods

1 MHz

0.5 0

100 kHz Inovirus Inluenza Bacteriophage

0.5 –1 100

105 Frequency (Hz)

(a) Inluenza

5 MHz

1010

Inovirus

First electrode pair

hird electrode pair Second electrode pair

Bacteriophage (b)

(e)

(c)

(f )

(d)

(g)

FIGURE 22.21 (See color insert following page 25-16.) Simulation on selective deposition of six viruses. 18 μm/s low is directed from let to right. he irst electrode pair is operating at 5 MHz, the second pair at 1 MHz, and the third pair at 100 kHz. Inluenza, inovirus, and bacteriophage are selectively deposited on the i rst, second, and third electrode pairs consequently. (a) Polarization factor of viruses at diferent frequencies. (b) Time = 0 ms. (c) Time = 15 ms. (d) Time = 30 ms. (e) Time = 45 ms. (f) Velocity proi le in the channel. (g) Electric ield across three electrode pairs.

agents in nanoluidic channels provides a novel tool for controlling and separating such molecules. he diference of nanochannels from micro/macroscale channels originates from small dimensions. At such a small scale, surface-charging efect dominates the luid behavior. Two major factors are involved in the dif usion of liquid in a nanochannel: ion dif usion and capillary action. he dif usion of the liquid into the nanochannel can be triggered by the dif usion of ions into the channel covered by surface charges. Capillary action at air–liquid interface may also result in liquid i lling. Such i lling process strongly depends on liquid property, ion concentration, and the liquid–wall interface. he physics involved in the ion dif usion process and capillary action will be addressed in this section. 22.4.4.1 Capillary Action–Driven Flow Liquid i lling is a phenomenon in which luid is introduced through a channel by surface tension or surface charges. Surface efect is dominant as the size of a channel decreases to micro or nanoscale. Two major forces in such a small channel are surface tension and an externally applied pressure or vacuum. Without the external forces, luid low is generated by capillary action when the contact angle is less than 90° (hydrophilic). When the

contact angle is greater than 90° (hydrophobic), the luid has to be pressurized to induce a luid low. To trigger luid low in a hydrophobic channel, the external pressure has to be larger than the pressure jump across the interface. he detailed analysis of capillary action–driven low has been presented by Yang et al. (2004). he liquid–air interface is an evolving surface driven by the surface energy. he dynamics of the liquid/air interface in the nanochannel is controlled by the capillary force and viscous friction from the channel wall. he pressure drop across the air–liquid interface is described by the Young–Laplace equation: Pc =

2 γ cos(θ) r

(22.148)

where r is the channel radius γ is the surface tension of the liquid θ is the contact angle he rate of liquid penetration into a small channel of radius r is given by the Washburn equation:

22-33

Computational Nanomechanics

dl (P + Pc )r 2 = dt 8μl

(22.149)

where P is the external driving pressure μ is the viscosity l is the penetration length Solving Equation 22.149 without external driving pressure gives an estimation of the kinetics of the capillary i lling process: l=a t =

γ cos(θ)r ⋅ t 2μ

(22.150)

Equation 22.150 is based on a constant capillary pressure (Equation 22.148) driving the illing process and a linear hydraulic low resistance. his resistance increases in proportion to the length of the liquid plug. In micro/nanoscale channel, the gravity force is much smaller than the surface tension, thus the i lling length is as large as a few centimeters. Such capillary action–based i lling process is tested in an open microchannel experiment. Two kinds of microluidic channels were fabricated to investigate capillary action: 4 and 10 μm wide channels (the depth and length are the same for both channels; 2 and 200 μm respectively). he open microchannel means that the top of the channel is open to air, which is not enclosed. When water suspending microspheres

(a)

Water suspending microspheres

(b)

(average diameter: 6 μm; standard derivation: 0.37 μm; Bangs Laboratories, Inc., Fisher, Indiana) was gently dropped in a reservoir of a 10 μm-wide channel, the water was driven along the wall of the mesa structure in Figure 22.22a. he channel, however, was not completely wet, since the top of the luid channel was open to air. In the 4 μm-wide channel, the capillary action was strong enough to make the channel wholly wet. It demonstrated that the water could be transported into an open microchannel by capillary action. Figure 22.22b and c show that microspheres were gradually transported by the low due to capillary action. It was interestingly observed that the continuous low was generated due to evaporation of water in the other side of the reservoir. As water evaporated, the capillary action continued to supply water to ill in the channel from the reservoir. he continuous supply of luid was achieved by the open channel coniguration without an external pressure. Figure 22.23 shows magniied pics/images of the inset in Figure 22.22c. A small sphere (diameter ~1 μm) was transported through the channel due to the continuous low. he experimental result showed that a particle could be isolated from larger particles (diameter 6 μm) upon its diameter due to the channel dimension and the formed meniscus. In spite of continuous low using capillary action, the particle in Figure 22.23c stopped at the corner of the channel due to the drag force. he experimental results presented in this section were explained by the capillary-driven i lling theory. Such illing process in channels having various sizes and surface properties could be designed to control the liquid/particle transportation.

(c)

FIGURE 22.22 Capillary low in a 4 μm-wide open channel of length 200 μm and depth 2 μm. (a) Structure of an open luidic channel. (b) and (c) Sequential pics/images showing the supply of water suspending spheres with a mean diameter of 6 μm and a standard deviation of 0.37 μm, and the aggregation of microspheres near the channel due to capillary force and its induced low.

(a)

(b)

(c)

FIGURE 22.23 Transport of a 1 μm diameter microsphere in a 4 μm wide channel (inset of Figure 22.22c). (a) Microsphere marked in the circle is 1 μm in diameter, which is isolated from 6 μm diameter spheres. (b) he sphere is transported to the edge of the channel. he water is continuously supplied to the channel due to evaporation of water and capillary reaction. (c) he particle stops at the corner of the channel.

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Handbook of Nanophysics: Principles and Methods

22.4.4.2 Liquid Diffusion in Nanochannels Compared to microchannels, nanochannels are more challenging in terms of both fabrication challenge and physical complexity. Besides capillary action, charges and ions in the fluid also play an important role in fluid transportation in nanochannels. Using a developed fabrication method, an array of nanochannels was fabricated. Figure 22.24a shows the optical pics/image of the array of the fabricated nanochannels. The spacing of the nanochannels is 20 μm. As shown in SEM pics/images in Figure 22.24b and c, the entrance of the channel is 23 nm wide and the average width of the channel is 28 nm. To study the dif usion efect in nanochannels, a drop of phosphate bufer (PB; Fisher Scientiic, pH 7.2) solution was used. A droplet of the solution was gently placed on the array of nanochannels. he solution entered into the channel paths, which made the channels disappear from the vision under an optical microscope, Figure 22.24. In the igure, the channels i lled with PB were not observed, but the channels uni lled with the solution were observed as bright-blue stripes. To verify the dif usion in nanochannels, a base solution (KOH) was mixed with an acid solution (H2SO4) in nanochannels. For the purpose, a drop of the KOH solution was placed on nanochannels, as shown in Figure 22.25, and the solution was dif used into the channels. he dif usion length was limited to 200–300 μm. On the right side of the KOH drop, a drop of 1st and 2nd Al

H2SO4 was also placed on the nanochannels. he solution was dif used into the nanochannels at the distance of over 500 μm and reacted with KOH solution, which resulted in salt generation. In Figure 22.24c, the gray area shows the salt generated due to the reaction. Since the dif usion length of KOH solution is smaller than that of H2SO4, the reaction was generated near the KOH solution. In its magniied view, the salt generated by the reaction is shown in Figure 22.24d. 22.4.4.3 Modeling Liquid Diffusion in Nanochannels he nanochannels in Section 22.4.4.2 can potentially provide a platform for various applications including bio/chemical sensors. To achieve this goal, it is important to investigate the physics involved in the dif usion process. In this section, we suggest a model to help understand the liquid dif usion problem in the nanochannels, and explore the feasibility for precise control over the dif usion length. Fluid transportation in nanochannels can be modeled in various ways at diferent scales. At molecular level, MD can be used to analyze the molecular interaction of liquid/ion species with the channel surface. Unlike continuum non-slip theory, liquid low in nanochannels usually experiences slip at liquid–wall interface, which can be revealed by MD simulation (hompson et al. 1997). Such molecular-level simulation is applicable to nanochannels having a diameter of a few nanometers. Beyond 2nd Al Al 23 nm

SiO2 SiO2 Si

Si 20 μm (a)

(b)

(c)

FIGURE 22.24 Fabricated nanochannels by the shadow edge lithography: (a) Optical pictures/image of an array of nanoluidic channels ater RIE etching; the channels are 28 nm wide and 240 nm deep. (b) SEM pictures/image of a clearly dei ned nanochannel. (c) Magniied pictures/image at the nanochannel (From Bai, JG. et al., Nanotech., 18(40), 405307, 2007; Bai, JG. et al., Lab on a Chip, 9, 449, 2009.).

KOH

KOH Difusion direction H2SO4

Difusion length (a)

H2SO4 (b)

(c)

(d)

FIGURE 22.25 Dif usion experiment in open nanochannels. (a) KOH solution on nanochannels, scale bar 100 μm. (b) H2SO4 solution, scale bar 100 μm. (c) Reaction due to mixture of KOH and H2SO4, scale bar 200 μm. (d) Exploded pics/image of (c); salt produced in the reaction, scale bar 100 μm.

22-35

Computational Nanomechanics

that, continuum approach is a more reasonable choice due to the computational cost. Continuum calculation can predict the basic features of electroosmotic f low, but lacks in accurate representation of the interaction between ions, biomolecules, electrical double layer, and surface charges on the wall. Continuum calculation assumes that the characteristic length of the channel is much larger than the Debye length. However, in the nanochannels, the thickness of the electric double layer (EDL) can be comparable to the channel width and depth. Transportation of ions and species in nanochannels involves the coupling of ions with the EDL, at which the continuum assumptions may not hold anymore. he EDL not only induces nonuniform motion of the solvent but also generates nonuniform transverse electric ields. In the case of transporting biomolecules in nanochannels, steric interactions of biomolecules with walls should be considered as well. In this section, we introduce a hierarchical model that brings molecular-level dif usion and slip coeicient into the continuum description. he details of the EDL are analyzed by MD calculation while the macroscopic luid low is solved by continuum calculation. 22.4.4.3.1 Continuum Calculation he primary variables to be solved are the electric ield strength and the species concentration. he species concentration is governed by the conservation equation: ∂c k + v f ⋅ ∇ck = ∇ ⋅ ⎣⎡ −ηk ez k ck E + ηk kBT ∇ck ⎦⎤ , k = 1,…, N ∂t (22.151)

where e is the charge on a proton zk is the valence of the kth species whose concentration is ck ηk is the mobility that describes how fast a given ion moves in a uniform electric ield gradient vf is the luid velocity kB is the Boltzmann constant T is the temperature ck = 0 at the channel surface he free charge density is related to the species concentration as ρe =

∑ez c , k k

(22.152)

k

he electric ield is calculated through the electric potential: E = −∇ψ

(22.153)

For convenience, the electric potential can be decomposed into two parts: ψ =φ+ϕ

(22.154)

where φ is the potential induced by the external electric ield ϕ is the zeta potential induced by the charges in the luid or on the solid wall he external potential should satisfy the Poisson equation: ∇2ϕ = 0

(22.155)

he zeta potential is governed by the Gauss equation: ∇ 2φ = −

1 e ρ ε0ε

(22.156)

where ε0 is the permittivity of free space ε is the dielectric constant of the media he lux due to kth species is given by Nernst–Planck equation: z ec ⎛ ⎞ J k = −Dk ⎜ ∇ck + k k ∇ψ ⎟ kT ⎝ ⎠

(22.157)

where Dk is the dif usivity of kth ion species, which describes the capability of ions to minimize a concentration gradient. Combining these equations together, the luid motion can be described by the Navier–Stokes equation with the electric force from the free charges as ∇⋅v = 0 ⎛ ∂v ⎞ ρf ⎜ + v ⋅ ∇v ⎟ = ∇ ⋅ σ + f e = −∇p + μ∇2v + Eρe , ⎝ ∂t ⎠

(22.158)

(22.159)

Equations 22.152 through 22.159 are the general governing equations to calculate the ion distribution and luid low in a channel. At nanoscale channels, the non-slip boundary condition may not be applicable anymore. hus, it is reasonable to adopt a slip boundary at the luid–wall interface: u = uslip, where uslip is the slip velocity at the boundary that is determined by MD simulation. It should be noted that the viscosity μ and mobility ηk in the continuum governing equations cannot be treated as a material constant due to the nature of luid low in nanochannels, and should be obtained through molecular-level calculation. he charge dif usion coeicient is related to the mobility through the generalized Einstein relation (see Chapter 29 of Ashcrot

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Handbook of Nanophysics: Principles and Methods

and Mermin 1976, Plecis et al. 2005). At low density limit, the relation is given by D/η = kBT/q (Einstein relation) where q is the charge of the particle. In the following part of this section, we make approximations to obtain a solution of electroosmotic low in a 2D rectangular channel. First, let us assume that the electric double layer has a inite length. Based on the Debye–Huckel approximation for the charge density, the equilibrium zeta potential can be described by the meanield Poisson–Boltzmann equation for a monovalent solution: ∇2φ = −

⎛ −zeφ ⎞ 2cze sinh ⎜ ⎟ ε0 ε ⎝ kBT ⎠

(22.160)

If we assume further that ze 10l. his geometrical condition does not fully deine the applicability of continuum solid mechanics because the nature of studied mechanical processes is not taken into account. In this connection, we introduce a geometrical parameter, Lp, to characterize those mechanical processes. he parameter Lp can be the minimum distance at which the stress and strain ields (in the case of statics), or the wavelength (in the case of dynamics), or the buckling mode wavelength (in the case

Handbook of Nanophysics: Principles and Methods

of stability theory) change substantially. his restriction on the studied mechanical processes can be represented in the form Lp > LV. hus, the continuum solid mechanics can be applied to description of a mechanical process in a material with the internal structure, if the geometrical parameters that characterize the process, the minimum volume of the material, and its internal structure satisfy the following inequality: L p > LV > 10l

(24.6)

24.2.4.2 Examples Now let us consider examples of applying the above condition to a number of materials. Example A. Consider nanomaterials with crystalline structure. In this case, the parameter l in Equation 24.6 is the average distance between the neighboring atomic planes. Since the average interatomic distance in a crystal lattice comprises several Angstroms, it follows from Equation (24.6) that LV must be of magnitude of several nanometers. herefore, to analyze nanomaterials with crystalline structure, we can apply the tools of continuum solid mechanics (i.e., the homogeneous continuum model) within the minimum volume LV of the material if the mechanical processes being studied satisfy the condition given by Equation 24.6 and change substantially at distances much larger than several nanometers. Example B. Consider nanomaterials whose atoms form granules. Wilson et al. (2002) and Bhushan (2007) reported such nanomaterials with granules up to 100 nm in size. From this value and Equation (24.6), it follows that the mechanical processes in granules to be studied within the framework of the homogeneous continuum model must satisfy the condition Lp > 100 nm.

24.2.5 Main Research Areas in Nanomechanics Bearing in mind the discussion of some aspects of nanomechanics in the Sections 24.2–24.4 let us point out three main areas of research in the mechanics of nanomaterials, as it is envisaged by the authors. he irst area comprises the studies of materials and processes, for which the applicability conditions, Equation 24.6, are satisied. It covers a wide range of static, dynamic, and stability problems for nanoparticles and nanocomposites and those fracture problems that can be solved within the framework of continuum solid mechanics. One of the well-known approaches within this area is based on the principle of homogenization (see, for example, Guz 1993–2003; Nemat-Nasser and Hori 1999). he second research area comprises the studies of materials and processes, for which the applicability conditions (Equation 24.6) are not generally satisied, but an approximate approach (which may be named the principle of continualization) can be applied. By continualization, we mean constructing approximate continuum theories that describe changes of at least integral characteristics of discrete structures. he principle of continualization is

24-5

Mechanical Models for Nanomaterials

24.3 New Type of Reinforcement— “The Bristled Nanocentipedes”

200 nm

procedure of determining the efective properties of a new type of nanocomposites is considered below. Several decades ago, whiskers were looked at as a new class of materials: very promising and very expensive—much the same as we look at the nanoibers now. he whiskers are strong because they are essentially perfect crystals and their extremely small diameters allow little room for the defects which weaken larger crystals. More than 100 materials, including metals, oxides, carbides, halides, nitrides, graphite, and organic compounds can be prepared as whiskers (Katz and Milewski 1978). he whiskerization was suggested as a special form of supplementary reinforcement particular to carbon ibers. Since carbon ibers were frequently utilized with resin matrices, such composite materials exhibited low shear strength due to poor bonding. he technique of whiskerization consists in the addition of whiskers to the composite by growing them directly on the surfaces of the carbon ibers. Whiskerizing introduces an integral bond between whiskers and the carbon ibers. he three to ive times increase of the interfacial shear bond for diferent combinations of carbon ibers and epoxy matrices was reported by Katz and Milewski (1978). Ater almost four decades since the introduction of whiskerized microibers, they found a new incarnation in the emerging world of nanomaterials. he recent paper by Wang et al. (2004) describes the CdTe nanowires coated with SiO2 nanowires. he resulting composition is wittily named by the authors as “the bristled nanocentipedes.” Two types of CdTe nanowires are reported: stabilized with MSA (mercatptosuccinic acid, HO2CCH2CH(SH) CO2H) and TGA (thioglycolic acid, HSCH2CO2H). he former has a diameter of 4.5–6.5 nm, and the latter 3 nm. Figure 24.2 (Wang et al. 2004) shows the MSA stabilized “wire-coating” with numerous nearly parallel bristles growing perpendicular to the surface called also the brush-like composition. Evidently, the structure “CdTe nanowire–SiO2 nanowires” consists of three components: CdTe wire forms the solid core, which is jointed continuously with coating from SiO2 nanowires in the form of some solid shell, and then the shell is coated periodically by

A

widely used in various branches of physics. A classical example is the continuum theory of dislocation presented, for instance, by Cottrell (1964) and Eshelby (1956). Dislocations are discrete defects in a discrete system, a crystal lattice. Nevertheless, a continuum theory that describes the laws of propagation of dislocations was developed for such a discrete system. Certainly, the mechanics of nanoparticles requires applying the principle of continualization; ater that, problems for nanocomposites can be treated within the framework of continuum representations. Due to the application of the principle of continualization, new formulations are expected to appear based on speciic models of continuum solid mechanics. he third research area comprises the studies of particularly discrete systems, for which the applicability conditions (Equation 24.6) are not satisied. It seems obvious that the third research area includes investigations of the mechanics of nanoparticles. Here, it is diicult to obtain speciic results for a wide range of structures and mechanical phenomena. Subdivision into three research areas proposed here, although conditional, may be useful in analyzing approaches to the study of phenomena and in interpreting results. h ree possible research areas mainly with reference to the mechanics of nanoparticles were discussed above. Let us now point out some issues relevant to the mechanics of nanocomposites. he term “nanocomposite,” when used in nanomechanics, may imply two diferent types of nanomaterials. he irst type is a material consisting of a matrix reinforced with nanoparticles. hese composites can be studied within the irst and second research area using approaches and methods of the micromechanics of composites—the latter is comprehensively developed (see, for example, Christensen 1979; Guz et al. 1992; Guz 1993–2003; Kelly and Zweben 2000). As each nanoparticle has a rather complex internal structure, it can be considered as a nanocomposite itself with its own internal structure. Such a composite can be studied using approaches from all the three research areas. To analyze mechanical phenomena in nanocomposites at the inal stage of studies within the i rst and second research areas, we can use continuum representations of the mechanics of materials with internal structure. With such an approach, it is possible to analyze a wide range of static, dynamic, and stability problems for nanocomposites and those fracture mechanics problems that can be solved within the framework of solid mechanics. he detailed examples of application of micro- and macromechanical models to nanocomposites were also given by Guz et al. (2005, 2007a,b, 2008a,b), Guz and Rushchitsky (2004, 2007), Zhuk and Guz (2006, 2007).

24.3.1 New Incarnation of an Old Idea As mentioned above, very oten, the ideas developed for studying the materials at one level can be successfully modiied or extended for application at another level. As an example, the

FIGURE 24.2 CdTe nanowires coated with SiO2 nanowires: “the bristled nanocentipede.” (From Wang, Y. et al., Nano Lett., 4(2), 225, 2004. With permission.)

24-6

Handbook of Nanophysics: Principles and Methods Unit cell: Matrix

Bristled fiber: fiber

Fiber: core CdTe

Bristled coating

Solid coating SiO2

Fiber CdTe + SiO2 Bristle coating SiO2

(a)

(b)

(c)

FIGURE 24.3 General schematic of the model.

bristled and smooth zones. Particularly, for the case shown in Figure 24.2, we can loosely assume that the core radius is 3 nm, the shell thickness is 15 nm, the bristled/smooth zone length is 6 nm, and the length of bristles is 32 nm. here are striking similarities between the well-known process of whiskerization of microibers and the recent idea of bristled nanowires. Both whiskerized microibers and bristled nanowires exhibit similar geometrical structure and can be used for the same ultimate purpose of fabricating composite materials with improved iber–matrix adhesion and hence the increased shear strength. If we consider the structure “CdTe nanowire– SiO2 nanowires” placed in the matrix, the total number of components in the composition would be as high as four–the matrix being the fourth component in addition to the three components mentioned above. herefore, in order to study the efective properties of the entire composite and the efect of reinforcement with whiskerized microibers or bristled nanowires on the overall performance of the material, we need a four-component model. he necessity of this model was emphasized by Guz et al. (2008b), where the general methodology was outlined. Further in our discussion, we consider the problem of modeling properties of ibrous composite materials, which are additionally reinforced either by whiskerizing the microibers or by bristlizing the nanowires, and give the details of the method for deriving the explicit formulas for efective elastic constants of such materials.

subcomponents (Figure 24.3b and c), which is a new feature of the model. he coated iber is assumed to be consisting of three diferent parts: a solid core, a solid coating (homogeneous shell), and a “bristled coating” (composite shell). he fourth component in the model is the matrix. A segment of the model representing the core iber with solid coating and bristles attached to the solid coating is shown in Figure 24.4. Subsequently, the following notations are used to distinguish the four components of composite: (1) for the iber core, (2) for the iber solid coating, (3) for the iber bristled coating, and (4) for the matrix. For instance, c(1), c(2), c(3), and c(4) are the volume fractions of the iber core, the iber solid coating, the iber bristled coating, and the matrix, respectively. he radii of the iber core, the iber solid coating, and the iber bristled coating are, respectively, r(1), r(2), and r(3). hree out of four components are homogeneous materials, e.g., the epoxy matrix, SiO2 solid coating and CdTe iber core, with certain physical properties (Young’s modulus, shear modulus, Poisson’s ratio, density, etc.). However, the bristled coating is itself a composite consisting of, e.g., the epoxy matrix reinforced by SiO2 nanowires (Figures 24.3c and 24.4). he efective properties of this

24.3.2 Structural Model he proposed structural model for composites reinforced by whiskerized microibers or bristled nanowires is based on the assumption that mircoibers or nanowires (henceforth, called simply “ibers”) are arranged in the matrix periodically as a quadratic or hexagonal lattice. hen the representative volume element (unit cell) consists of the matrix and a coated iber (Figure 24.3a). At that, the coating itself has several

FIGURE 24.4 Figure 24.3c.

A closer look at the segment of the model shown in

24-7

Mechanical Models for Nanomaterials

component are evaluated separately beforehand. he easiest way to do it is by using the classical Voigt and Reuss bounds (see, for example, Christensen 1979; Kelly and Zweben 2000). For this purpose, we would need to know the radius, r b, and the length, lb, of bristles, their number per unit surface area of iber solid coating, and the radius of the iber solid coating, r b. hen the elemental volume of the bristled coating, V(3), which corresponds to the unit length along the iber, can be expressed as

(

2 V(3) = π (r (2) + lb )2 − r(2)

)

(24.7)

and the volume of a single bristle, Vb, as Vb = π rb2lb

(24.8)

If there are M bristles growing over the iber circumference and K bristles growing over the iber unit length, then the volume fraction of bristles, c b, in the elemental volume will be cb = MK

rb2 Vb = MK V(3) 2r (2) + lb

24.3.3 Application of the Muskhelishvili Complex Potentials he procedure of deriving the explicit expressions for efective elastic constants of the suggested four-component structural model is by no means a trivial mathematical exercise. For the lack of space, here it can be given only in outline for one of the constants, namely the shear modulus, G. Let us consider one of the simple states of equilibrium mentioned in Section 24.3.2, namely, the longitudinal shear, and denote the shear moduli of the components (i.e., the iber core, the iber solid coating, the iber bristled coating and the matrix) as G(1), G(2), G(3) and G(4), respectively. On the irst stage, two shear stress components, σ12 and σ13, and one displacement component, u1, are expressed in each domain occupied by a separate component (Figure 24.5) using the Muskhelishvili complex potentials (z is a complex coordinate in the transverse cross section, and i is imaginary unit): In the circle A(1) (1) σ12 (z ) = G (1) ⎡ϕ(1) (z ) + ϕ(1) ′ (z )⎤⎦ ; ⎣ ′

(24.9)

Also, in order to use the known formulas of the rule of mixture (Christensen 1979), we assume here that all the bristles are parallel to each other, i.e., that the properties of the bristled coating (3) (Figure 24.3c) do not change with the radius. his assumption, being, of course, a certain simpliication, seems reasonable, since the length of SiO2 nanowires used for reinforcement is rather small. Now we can proceed with the proposed four-component model. he model is based on the recent idea presented by Guz et al. (2008b). Instead of the thin shell model for the iber coating used in existing models, two diferent components are distinguished: the solid coating surrounding the iber and the bristled coating surrounding the solid coating. he mathematical formulation of the model is based on considering the four simple states of plane elastic equilibrium of the unit cell (a square with the side lcell, Figure 24.5)—i.e., longitudinal tension, transverse tension, longitudinal shear and transverse shear— and using the Muskhelishvili complex potentials (Muskhelishvili 1953) for each domain occupied by a separate component. he model yields the explicit formulas for ive efective elastic constants of the transversally isotropic medium, which represent the macroscopic properties of the considered composite.

(1) σ13 (z ) = iG (1) ⎡ϕ(1) ′ (z ) − ϕ(1) ′ ( z )⎤ ; ⎣ ⎦

(24.10)

u1(1) (z ) = ϕ(1) (z ) + ϕ(1) (z ) In the ring A(2) (2) σ12 (z ) = G (2) ⎡ϕ(2) (z ) + ϕ(2) ′ (z )⎤⎦ ; ⎣ ′ (2) σ13 (z ) = iG (2) ⎡ϕ(2) ′ (z ) − ϕ(2) ′ (z )⎤ ; ⎣ ⎦

(24.11)

u1(2) (z ) = ϕ(2) (z ) + ϕ(2) (z ) In the ring A(3) (3) σ12 (z ) = G (3) ⎡ ϕ(3) (z ) + ϕ(3) ′ (z )⎦⎤ ; ⎣ ′ (3) σ13 (z ) = iG (3) ⎡ ϕ(3) ′ (z ) − ϕ(3) ′ (z )⎤ ; ⎣ ⎦

(24.12)

u1(3) (z ) = ϕ(3) (z ) + ϕ(3) (z ) In the domain of the matrix A(4) (4) σ12 (z ) = G (4) ⎡⎣ϕ(4) ′ (z ) + ϕ(4) ′ (z )⎤⎦ ;

A(1) A(3)

(4) σ13 (z ) = iG(4) ⎡⎣ϕ(4) ′ (z ) − ϕ(4) ′ (z )⎤⎦ ;

(24.13)

u1(4) (z ) = ϕ(4) (z ) + ϕ(4) (z ) A(2) A(4)

FIGURE 24.5 he cross-section of the four-component model.

he three boundary conditions on the domain interfaces (Figure 24.5) are the conditions of perfect bonding between the components:

24-8

Handbook of Nanophysics: Principles and Methods

On the boundary between A(1) and A(2) ⎛ ⎛ G (1) ⎞ G (1) ⎞ 1 + ϕ ( z ) + 1 − (1) ⎜⎝ G (2) ⎟⎠ ⎜⎝ G (2) ⎟⎠ ϕ(1) (z ) = 2ϕ(2) (z )

(24.14)

On the boundary between A(2) and A(3) ⎛ G (2) ⎞ ⎛ G (2) ⎞ ⎜⎝ 1 + G (3) ⎟⎠ ϕ(2) (z ) + ⎜⎝ 1 − G (3) ⎟⎠ ϕ(2) (z ) = 2ϕ(3) (z ) (24.15)

where αn,k are the constants used in the theory of Weierstrass functions (Gradshteyn and Ryzhik 2000) λ = 2r(3)/lcell (2) (3) (4) (1) a2k , a2k , a2k , a2k are the yet unknown coeicients in the series given by Equations 24.17 through 24.20 hen the averaged stresses and strains for each of the domains are calculated using the contour integrals about closed paths: * − iσ13 * = 1 σ12 2 lcell

On the boundary between A(3) and A(4) ⎛ G (3) ⎞ ⎛ G (3) ⎞ 1 + ϕ ( z ) + (3) ⎜⎝ G (4) ⎟⎠ ⎜⎝ 1 − G (4) ⎟⎠ ϕ(3) (z ) = 2ϕ(4) (z ) (24.16) he possible case of imperfect adhesion between the iber core and the matrix can be taken into account by considering one of the four components, i.e., the coating layer, with the appropriately reduced properties. he cornerstone of the analytical procedure is the representation of the Muskhelishvili potentials by • A harmonic complex function, which is regular in the domain of iber core (circle A(1) in Figure 24.5): ∞

ϕ(1) (z ) =

∑a

(1) 2k

k =0

z 2 k +1 2k + 1

(24.17)

ϕ(2) (z ) =

∑

(2) 2 k +1 2k

(24.18)

a z

12

13

2

3

i ⎛ G ϕ(4) (z )d z + G(3) ϕ(3) (z )d z 2 ⎜ (4) lcell ⎝ S4 S4

∫

=

+ G(2)

∫

∫ ϕ

(2)

(z )d z + G(1)

S4

∫ ϕ S4

(1)

(z )d z ⎞ ⎟ ⎠

(24.21)

where the closed paths for each of the contour integrals are shown in Figure 24.6. Note that S4 consists of the outer boundary of the unit cell and the boundary between the bristled coating and the matrix. In order to make the path S4 a closed contour, a virtual mathematical section is introduced to the area i lled with the matrix (Figure 24.6). he integrals, Equation 24.21, can be taken as (Gradshteyn and Ryzhik 2000)

∫ ϕ

• A function in the form of Laurent series, which is regular in the domain of iber solid coating (ring A(2) in Figure 24.5): ∞

∫ (σ* − iσ* )dx dx

(1)

2 2 −2 (z )d z = 2i lcell c (1)a0(1) , c (1) = π r(1) lcell

(24.22)

S1

(

)

(

)

∫ ϕ

(2)

2 2 2 −2 (24.23) (z )d z = 2i lcell c (1) + c (2) a0(1) , c (2) = π r(2) − r(1) lcell

∫ ϕ

(3)

2 2 2 −2 (z )d z = 2i lcell c(1) + c(2) + c(3) a0(1) , c(3) = π r(3) − r(2) lcell

S2

k =−∞

• A function in the form of Laurent series, which is regular in the domain of iber bristle coating (ring A(3) in Figure 24.5):

(

)

(

)

S3

(24.24)

∞

ϕ(3) (z ) =

∑a

(3) 2 k +1 2k

(24.19)

z

k =−∞

• A doubly-periodic function constructed utilizing the Weierstrass functions in the domain of the matrix (A(4) in Figure 24.5): ⎛1 ϕ(4) (z ) = a0(4) z − λ 2a2(4) ⎜ − ⎝z ∞

+

∑ k =1

n=1

a2(4)k +2 λ 2 k +2 α n,k

k =1 n=1

−

∑α

∞

∑∑ ∞

∞

a2(4)k + 2 λ 2 k +2 (2k + 1)z 2k +1

n,0

S2

S3

z 2n+1 ⎞ ⎟ 2n + 1 ⎠

z 2n+1 2n + 1

S1 S4

(24.20)

FIGURE 24.6 Paths used for computing contour integrals in the four-component model.

24-9

Mechanical Models for Nanomaterials

⎡ 2 ⎢ −c (4)a0(4) + 1 − c (4) ϕ(4) (z )dz = 2i lcell ⎢ ⎣ S4

(

∫

∞

)∑ a

(4) 2k + 2 2 k + 2 (3)

r

k =1

⎤ α 0, k ⎥ , ⎥⎦

2 −2 c (4) = 1 − π r(3) lcell

(24.25)

* * = σ12 G* = G12 * ε12 = G(4)

(

⎛ c(4) + 2c(3) + c(4)G G −1 + 4c(2) 1 + G G −1 (4) (3) (3) (2) ⎜ (4) (4) −1 ⎜⎝ c + (2 − c )G(4)G(3)

Bearing in mind that for the volume fraction of the components c (1) + c (2) + c (3) = 1 − c (4)

(24.26)

the procedure results in the following expression for the average * and σ13 * , in a unit area are stresses, σ12 ⎡ * = 2G (4) ⎢ −c (4)a(4) + 1 − c (4) * − iσ13 σ12 0 ⎢⎣

(

(

)

∞

)∑ a

(4) 2k + 2 2 k + 2 (3)

r

k =1

(

+

⎤ α 0, k ⎥ ⎥⎦

)

+ 1 − c (4) a0(3)G (3) + c (2) + c (3) a0(3)G (2) + c (1)a0(1)G (1)

a0(3) = = a0(1) = =

(4) 0 (3)

[1 + (G

4a0(4) G )][1 + (G (2) G (3) )] (4)

(24.28)

2a0(2) [1 + (G (1) G (2) )] [1 + (G

(3)

(

)

(

)

(24.29)

⎡ ⎤ * = i ⎢a0(4) − a0(4) + c (3) a2(4) − a2(4) ⎥ ε13 ⎣ ⎦

(24.30)

Ater expressing a2(4) in terms of a0(4), from Equation 24.29 we get

) ((

⎡ 1 − G (3) G (4) * = 2Re{a0(4) } ⎢1 + c (3) + c (2) + c (1) ε12 ⎢ 1 + G (3) G (4) ⎣

(

−1 c (4) + (2 − c (4) )G(4)G(3)

)

−1

⎞ ⎟ ⎠⎟

(24.32)

G* = G(4)

(

−1 −1 c (4) + 2c (2) + c (4)G(4)G(2) + 4c (1) 1 + G(2)G(1) −1 c (4) + (2 − c (4) )G(4)G(2)

)

−1

(24.33)

)⎤⎥ )⎥⎦

G* = G(4)

−1 2c (1) + c (4)G(4)G(1) (4) −1 c + (2 − c )G(4)G(1) (4)

(24.34)

24.3.4 Computing the Effective Constants for a Particular Composition

* and ε13 * , we have For average shear strains, ε12 * = a0(4) + a0(4) − c (3) a2(4) + a2(4) ε12

−1 G(1)

(2)

Similarly, the explicit expressions for other four efective constants for the entire four-component composition are deduced.

(4) 0 (2)

8a G )][1 + (G G (3) )][1 + (G (1) G (2) )] (4)

−1

he two-component model will follow from Equation 24.33 if, additionally, the volume fraction of solid coating c(2) = 0 and the shear moduli of solid coating, G(2), and iber core, G(1), are the same (G(2) = G(1)):

(3) 0 (2)

2a 2a , a0(2) = (4) 1 + (G G ) [1 + (G G (3) )] (3)

) (1 + G

−1

Equation 24.32 yields the well-known formulas for two-component and three-component models (Nemat-Nasser and Hori 1999; Kelly and Zweben 2000; Guz 1993–2003; Rushchitsky 2006) as the particular cases. he three-component model will follow from Equation 24.32 if the volume fraction of bristled coating c(3) = 0 and the shear moduli of bristled, G(3), and solid, G(2), coatings are the same (G(3) = G(2)):

(24.27) Using Equations 24.14 through 24.16, coeicients a0(1), a0(2), a0(3) and a0(4) can be related as

(

−1 8c(1) 1 + G(3)G(2)

)

(24.31)

Combining Equations 24.27 and 24.29 through 24.31, the following expression for the efective longitudinal shear modulus of the entire four-component composition, G *, can be deduced:

In this subsection, we illustrate how to use the proposed fourcomponent model for computing the efective elastic constants for a generic composite material, which have the internal structure similar to the one given in Figure 24.3 and some typical properties of reinforcing elements (i.e., the core ibers, bristles/ whiskers, etc.). Let us consider the unidirectional iber-reinforced composite consisting of the epoxy matrix and hornel 300 ibers bristled by the graphite whiskers—a structure similar to that presented in Figure 24.2. he properties of the matrix, the iber core and the iber solid coating are given in Table 24.1 according to Katz and Milewski (1978), Lubin (1982), and Nemat-Nasser and Hori (1999). he composite is simulated by the model suggested in Section 24.3.2 and shown in Figure 24.3. Here the bristled coating is itself a composite (Figures 24.3c and 24.4). he efective properties of this component are evaluated separately beforehand, as described in Section 24.3.2. he radii of the iber core, the iber solid coating, and the iber bristled coating used for

24-10

Handbook of Nanophysics: Principles and Methods TABLE 24.1 Properties of the Matrix, the Fiber Core and the Fiber Solid Coating

Components

Density ρ, kg/m3

Young’s Modulus E, GPa

2250 1750 1210

1000 228.0 2.68

Graphite whiskers Fiber core hornel 300 Epoxy matrix

computing are, respectively, r(1) = 4 μm, r(2) = 6 μm, r(3) = 50 μm. hree diferent densities of bristlization are examined: dense, with 120 bristles over the iber circumference and 50 bristles over 100 μm of the iber length; medium, with, respectively, 60 and 50 bristles; and sparse, with, respectively, 30 and 50 bristles. he medium density is a limiting case for single bristles growing from the iber surface. he dense density (two times higher then the medium density) corresponds to two bristles growing from the same nest on the iber surface. At a distance from the iber surface, the bristles separate with some space between them still remaining for the matrix material to i ll in. According to Equation 24.9, the three cases give the volume fractions of bristles c b = 0.25; 0.125; 0.063, respectively, for sparse, medium, and dense bristlization. For the case of no whiskers added to the system, c b = 0. he computed volume fractions for the four components used in the model, i.e., the iber core, c(1), the iber solid coating, c(2), the iber bristled coating, c(3), and the matrix, c(4), are shown in Table 24.2. hese values are not afected by variations in density of bristlization. he latter inluences only the efective elastic properties of bristled coating. he values of all ive efective elastic constants representing the transversely isotropic response of the entire composite were computed by the method outlined in Section 24.3.3. he results show that the properties in the direction of ibers are the most sensitive to the density of bristles. he increase in the number of bristles per unit surface of the ibers gives a very strong rise to the value of Young’s modulus. However, the shear modulus, TABLE 24.2 Computed Volume Fractions for the Four Components Used in the Model c(1) 0.00384 0.00320 0.00256 0.00192

c(2)

c(3)

c(4)

0.02016 0.01680 0.01344 0.01008

0.576 0.480 0.384 0.288

0.4 0.5 0.6 0.7

TABLE 24.3 Values of Shear Modulus for the Cases of Sparse, Medium, and Dense Bristlization G, GPa

c(4) = 0.7

c(4) = 0.6

c(4) = 0.5

c(4) = 0.4

Gdense Gmedium Gsparse G0

1.355 1.374 1.391 0.9636

1.505 1.528 1.544 0.9649

1.674 1.701 1.715 0.9660

1.872 1.905 1.913 0.9671

Shear Modulus G, GPa

Poisson’s Ratio ν

385 88.00 0.96

0.3 0.3 0.4

being the driving parameter for the strength estimation of the entire composition (Guz et al. 2005, 2008b), is signiicantly less sensitive to this factor. he values of shear modulus for the considered cases of sparse, Gsparse, medium, G medium, and dense, Gdense, bristlization are given in Table 24.3 together with the values of shear modulus for the same composition without whiskers, G 0. In the latter case, cw = 0. he diference between Gsparse, G medium, and Gdense is less than 3% (Table 24.3). In the same time, the presence of bristled ibers itself—either with dense, medium, or sparse density of bristles—gives the signiicant increase in the shear modulus in composites if compared with the case without whiskers, i.e., with G 0. he considered case (Table 24.3) shows the increase from 1.4 times to up to 2 times, depending on the volume fraction of the matrix, c(4).

24.4 Discussion The above example gives an illustration of application of the proposed four-component model. It was given primarily for the purpose of explaining the computational procedure rather than for producing a correct estimate of efective properties of real materials. For the latter, we still lack some basic information about mechanical properties of nanocomponents (CdTe core nanoibers and SiO2 nanobristles). herefore, designing special experiments for testing CdTe nanoibers and SiO2 nanobristles is a necessary step for a using the proposed four-component model in engineering practice. On the next stage, ater acquiring the necessary experimental data, the efective properties for particular real nanocomposites can be computed using the procedure described in Section 24.3.4. Undoubtedly, even ater veriication of the predicted properties for bristled nanowires by comparing them with the results of specially designed experiments, the suggested approach can be considered as merely the irst step toward modeling bristled nanowires and their application. Even a four-component model is an idealization of the complex internal structure of the considered materials. However, it can provide us with important insight into some basic relationships between the properties of constituents and the overall performance of such materials. Ultimately, any mechanics of materials, including mechanics of nanomaterials, envisages analysis of materials for structural applications, be it on macro-, micro-, or nanoscale (Guz et al. 2007a,b; Windle 2007). It is therefore a logical conclusion that any research on nanomaterials should be followed by the analysis of nanomaterials working in various structures and devices. Micro- and nanostructural applications look like

Mechanical Models for Nanomaterials

the most natural and promising areas of the nanomaterials utilization. hey do not require large industrial production of nanoparticles, which are currently rather expensive. It seems pertinent to recall a discussion on mechanical properties of new materials that took place more than 40 years ago. In the concluding remarks, Bernal (1964) said: “Here we must reconsider our objectives. We are talking about new materials but ultimately we are interested, not so much in materials themselves, but in the structures in which they have to function.” he authors believe that nanomechanics faces the same challenges that micromechanics did 40 years ago, which Professor Bernal described so eloquently.

24.5 Conclusions his chapter revisited some of the well-known models in the mechanics of structurally heterogeneous media for the purpose of analyzing their suitability to describe properties of nanomaterials and nanocomposites and their mechanical behavior. New areas of research in nanomechanics of materials were also pointed out. As an example of application of the proposed approaches, the prediction of efective properties for a new type of nanocomposites was considered. his chapter presented a new fourcomponent model for predicting the mechanical properties of microcomposites reinforced with whiskers and nanocomposites reinforced with bristled nanowires. he mathematical formulation of the model is based on using the Muskhelishvili complex potentials for each domain occupied by a separate component. To illustrate the method for computing efective elastic constants within the proposed four-component model, a generic ibrous composite with three diferent densities of bristles growing on the core reinforcing ibers was considered. It was shown that the increase in the number of bristles per unit surface of the ibers gives a very strong rise to the value of Young’s modulus (Guz et al. 2007b, 2008b). However, the shear modulus, being the driving parameter for the strength estimation of the entire composition, is less sensitive to this factor.

Acknowledgments he authors would like to express their gratitude to Dr. M. Kashtalyan and all researchers from the Centre for Micro- and Nanomechanics (CEMINACS) at the University of Aberdeen (Scotland, United Kingdom) for the helpful discussions and suggestions. Financial support of the part of this research by the Royal Society, the Royal Academy of Engineering, and the Engineering and Physical Sciences Research Council (EPSRC) is gratefully acknowledged.

References Bernal, J.D. 1964. Final remarks. A discussion on new materials. Proceedings of the Royal Society A 282: 1388–1398. Bhushan, B. (Ed.). 2007. Springer Handbook of Nanotechnology. Berlin, Germany: Springer.

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Cherepanov, G.P. 1979. Mechanics of Brittle Fracture. New York: McGraw-Hill. Christensen, R.M. 1979. Mechanics of Composite Materials. New York: John Wiley & Sons. Cottrell, A.H. 1964. heory of Crystal Dislocation. London, U.K.: Blackie & Son Ltd. Eshelby, J.D. 1956. he continuum theory of lattice defects. In: Progress in Solid State Physics, vol. 3, F. Seitz and D. Turnbull (Eds.), New York: Academic Press. Gradshteyn, I.S. and I.M. Ryzhik. 2000. Tables of Integrals, Series, and Products. San Diego, CA: Academic Press. Guz, A.N. (Ed.). 1993–2003. Mechanics of Composites, vols. 1–12. Kiev, Ukraine: Naukova dumka (vols. 1–4), Kiev, Ukraine: A.C.K. (vols. 5–12). Guz, A.N., Akbarov, S.D., Shulga, N.A., Babich, I.Yu., and V.N. Chekhov. 1992. Micromechanics of composite materials: Focus on Ukrainian research (Special Issue). Applied Mechanics Review 45(2): 13–101. Guz, A.N., Rodger, A.A., and I.A. Guz. 2005. Developing a compressive failure theory for nanocomposites. International Applied Mechanics 41(3): 233–255. Guz, A.N., Rushchitsky, J.J., and I.A. Guz. 2007a. Establishing fundamentals of the mechanics of nanocomposites. International Applied Mechanics 43(3): 247–271. Guz, A.N., Rushchitsky, J.J., and I.A. Guz. 2008a. Comparative computer modeling of carbon-polymer composites with carbon or graphite microibers or carbon nanotubes. Computer Modeling in Engineering & Sciences (CMES) 26(3): 139–156. Guz, I.A. and J.J. Rushchitsky. 2004. Comparison of mechanical properties and efects in micro and nanocomposites with carbon illers (carbon microibres, graphite microwhiskers and carbon nanotubes). Mechanics of Composite Materials 40(3): 179–190. Guz, I.A. and J.J. Rushchitsky. 2007. Computational simulation of harmonic wave propagation in ibrous micro- and nanocomposites. Composite Science & Technology 67(5): 861–866. Guz, I.A., Rodger, A.A., Guz, A.N., and J.J. Rushchitsky. 2007b. Developing the mechanical models for nanomaterials. Composites Part A 38(4): 1234–1250. Guz, I.A., Rodger, A.A., Guz, A.N., and J.J. Rushchitsky. 2008b. Predicting the properties of micro and nanocomposites: From the microwhiskers to bristled nano-centipedes. he Philosophical Transactions of the Royal Society A 366(1871): 1827–1833. Katz, H.S. and J.V. Milewski (Eds.). 1978. Handbook of Fillers and Reinforcements for Plastics. New York: Van Nostrand Reinhold Company. Kelly, A. and C. Zweben (Eds.). 2000. Comprehensive Composite Materials, vols. 1–6. Amsterdam, the Netherlands: Elsevier Science. Lubin, G. (Ed.). 1982. Handbook of Composites. New York: Van Nostrand Reinhold Company. Muskhelishvili, N.I. 1953. Some Basic Problems of the Mathematical heory of Elasticity. Leiden, the Netherlands: Noordhof.

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Nemat-Nasser, S. and M. Hori. 1999. Micromechanics: Overall Properties of Heterogeneous Materials. Amsterdam, the Netherlands: North-Holland. Panin, V.E., Egorushkin, V.E., and N.V. Makarov. 1995. Physical Mesomechanics and Computer Design of Materials, vols. 1–2. Novosibirsk, Russia: Siberia Publishing House of the RAS. Rushchitsky, J.J. 2006. Sensitivity of structural models of composite material to structural length scales. International Applied Mechanics 42(12): 1364–1370. Sih, G.C. and B. Lui. 2001. Mesofracture mechanics: A necessary link. heoretical & Applied Fracture Mechanics 37(1–3): 371–395. Wang, Y., Tang, Z.Y., Liang, X.R., Liz-Marzan, L.M., and N.A. Kotov. 2004. SiO2-coated CdTe nanowires: Bristled nano centipedes. Nano Letters 4(2): 225–231.

Handbook of Nanophysics: Principles and Methods

Wilson, M.A., Kannangara, K., Smith, G., Simmons, M., and B. Raguse. 2002. Nanotechnology. Basic Science and Emerging Technologies. Boca Raton, FL: Chapman & Hall/CRC. Windle, A.H. 2007. Two deining moments: A personal view by Prof. Alan H. Windle. Composite Science & Technology 67(5): 929–930. Zhuk, Y. and I.A. Guz. 2006. Inluence of prestress on the velocities of plane waves propagating normally to the layers of nanocomposites. International Applied Mechanics 42(7): 729–743. Zhuk, Y.A. and I.A. Guz. 2007. Features of plane wave propagation along the layers of a prestrained nanocomposite. International Applied Mechanics 43(4): 361–379.

V Nanomagnetism and Spins 25 Nanomagnetism in Otherwise Nonmagnetic Materials

Tatiana Makarova ...........................................................25-1

Introduction • What Are Nonmagnetic Materials? • Formation of Magnetic State through Introducing Nonmagnetic sp Elements to Nonmagnetic Matrices • Ferromagnetism in Hexaborides: Discovery, Disproof, Rebuttal • Magnetic Semiconducting Oxides • Magnetism in Metal Nanoparticles • Magnetism in Semiconductor Nanostructures • Ferromagnetism in Carbon Nanostructures • Possible Traps in Search of Magnetic Order • Nontrivial Role of Transition Metals: Charge Transfer Ferromagnetism • Interface Magnetism • Conclusions • References

26 Laterally Conined Magnetic Nanometric Structures Sergio Valeri, Alessandro di Bona, and Gian Carlo Gazzadi....................................................................................................................................................... 26-1 Introduction • Background • State of the Art • Critical Discussion of Selected Applications • Outlook • References

27 Nanoscale Dynamics in Magnetism Yves Acremann and Hans Christoph Siegmann ..............................................27-1 Introduction • Magnetic Structures in Nanoscopic Samples and heir Dynamics • Selected Experimental Results • Conclusion • Acknowledgments • References

28 Spins in Organic Semiconductor Nanostructures Sandipan Pramanik, Bhargava Kanchibotla, and Supriyo Bandyopadhyay ................................................................................................................................................28-1 Introduction • Advent of Organics • Spin Transport Concepts • Spin Transport in Organic Semiconductors: Organic Spin Valves • Spin Transport in the Alq3 Nanowires • he Transverse Spin Relaxation Time in Organic Molecules: Applications in Quantum Computing • A Novel Phonon Bottleneck in Organics? • Conclusion • Acknowledgments • References

V-1

25 Nanomagnetism in Otherwise Nonmagnetic Materials 25.1 25.2 25.3 25.4

Introduction.........................................................................................................................25-1 What Are Nonmagnetic Materials? .................................................................................25-2 Formation of Magnetic State through Introducing Nonmagnetic sp Elements to Nonmagnetic Matrices ..................................................................................................25-3 Ferromagnetism in Hexaborides: Discovery, Disproof, Rebuttal .............................. 25-4

25.5

Magnetic Semiconducting Oxides ...................................................................................25-7

Discovery • Disproof • Rebuttal Zink Oxide • Titanium Oxide • Hafnium Oxide • Other Nonmagnetic Oxides

25.6 25.7 25.8

Magnetism in Metal Nanoparticles ...............................................................................25-10 Magnetism in Semiconductor Nanostructures............................................................25-12 Ferromagnetism in Carbon Nanostructures ................................................................25-13 Pyrolytic Carbonaceous Materials • Graphite • Porous Graphite • Carbon Nanoparticles • Nanographite • Fullerenes • Irradiated Carbon Structures • Magnetic Nature of Intrinsic Carbon Defects • Magnetism of Graphene

Tatiana Makarova Umeå University

25.9 Possible Traps in Search of Magnetic Order .................................................................25-19 25.10 Nontrivial Role of Transition Metals: Charge Transfer Ferromagnetism ...............25-20 25.11 Interface Magnetism.........................................................................................................25-21 25.12 Conclusions ........................................................................................................................25-21 References.........................................................................................................................................25-22

25.1 Introduction he physics of nanomagnetism is concerned with the studies of magnetic phenomena speciic to nanostructured materials, i.e., materials with the size of typical structural elements from 1 to 100 nm. A porous specimen built of small particles is the simplest example of a nanostructured material. Due to dramatically enhanced surface-to-volume ratio, the magnetic properties of nanoparticles may be markedly diferent from those of the bulk material with the same chemical composition. Numerous experiments show that the magnetic properties of bulk ferromagnetic and antiferromagnetic materials are modiied in the corresponding nanomaterials. Most surprisingly, nanostructured materials or thin i lms may show ferromagnetism at room temperatures (RTFM) even when the starting material is magnetically inactive. Whether a given material shows magnetism is delicately controlled by its structural and geometrical properties, such as the interatomic distances, coordination number (i.e., the number of nearest neighbors), and symmetry. he main consequences of the structural modiications in nanostructured materials are the following (ater Feng et al. 1989):

1. Coordination number decreases, and hence there is a decrease in the overlap of the nearby atomic orbitals. his leads to the sharper density of states. he magnetic moment per atom increases with the decrease of coordination number. 2. With the decrease of coordination number, the efect of vacancies on the nearest-neighbor magnetic atoms tends to enhance its magnetic moment. 3. However, surface relaxations decrease the interlayer separation, overlap increases, and magnetic moment decreases. 4. he efect of interatomic distances is larger than that due to coordination number. hus, the monolayers of magnetic elements are likely to provide a very strong moment. To summarize, the local environment of the atoms can be altered by introducing defects such as impurities, vacancies, and vacancy complexes. he reduced coordination number and symmetry changes are expected to narrow the electronic bands. his enhances magnetism in ferromagnetic materials and may cause magnetization in nonmagnetic materials. Spintronics, which enables the manipulation of spin and charges in electronic devices, is a ield of study that holds 25-1

25-2

promise for a revolution in electronics. he materials explored today for spintronics applications are mainly dilute magnetic semiconductors (DMS), i.e., semiconductors doped with magnetic elements. A novel family of spintronic materials is emerging, i.e., nanometer-scale magnets built from nominally nonmagnetic elements. As an example, the progress article (Bogani and Wernsdorfer 2008) emphasizes the importance of systems of reduced dimensionality for enhanced information storage capacity.

Handbook of Nanophysics: Principles and Methods

7 6 5

Carbon

4 3 1

2

7 6

25.2 What Are Nonmagnetic Materials? Strictly speaking, all materials are magnetically active in the sense that their magnetization can be induced by an external magnetic i led: they show either negative diamagnetic susceptibility (diamagnetism) or positive magnetic susceptibility (paramagnetism). he total magnetic susceptibility, χ, of a certain material includes several terms: the diamagnetic contribution from the core electrons, the orbital diamagnetism, the paramagnetic van Vleck term originating from virtual magnetic dipole transitions between the valence and conduction bands, the Landau diamagnetism of the itinerant electrons in metals, and the Pauli spin paramagnetism of itinerant electrons in metals or the Curie paramagnetism exhibited by localized unpaired spins. A material is called nonmagnetic if the magnetization density, local or global, is always zero in the absence of an external magnetic ield. If the magnetization density in a material is i nite even in the absence of the external ield, the material is generally called magnetic. In some magnetic materials— antiferromagnets—the local density varies from point to point in both magnitude and sign on a microscopic scale, so the magnetization density measured in macroscopic volumes vanishes. Below, we mainly focus on the case of ferromagnets, i.e., materials in which the macroscopic magnetization density is i nite. If not stated otherwise, the ferromagnetic state is implied when we use the word “magnetic.” Ferromagnetic state requires unpaired electrons and mechanisms leading to ferromagnetic coupling of unpaired electrons. Every electron is a tiny magnet, but an atom does not necessarily have a magnetic ield just because its constituent electrons do. An atom can have a net magnetic ield if it has unpaired electrons in one of its outer shells. If an element has unpaired electrons, a sample of that element can become magnetic if the spins in the bulk material are oriented properly. In isolated atoms, many elements exhibit magnetic moments according to Hund’s rules, while in the solid state, only a few of them are magnetic. he disappearance of magnetic moments in a solid is a consequence of the delocalization of the electrons, which favors equal occupation of states having opposite projections of magnetic moments. Light elements, say carbon, may have unpaired spins in elemental state, as shown in Figure 25.1, but in a bulk state all electrons are paired. hat is why magnetism based on s and p

5 Iron

4 3 1

2

7 6 5 4

Gadolinium

3 1

2

FIGURE 25.1 Electronic structure of carbon, iron, and gadolinium atoms. Plotted using www.webelements.com

electrons is a phenomenon that is not expected. “he principal quantum number for electrons responsible for the magnetism must be ≥3” (Heisedberg 1928). Unpaired electrons arise inevitably as one moves down the periodic table toward larger atoms. Iron atom has a strong magnetic ield because it has four unpaired electrons in its outer shell. If an element has many unpaired electrons, there is a large probability that in certain compounds of this element the spins are oriented. he peculiar role of d and f electrons in magnetism can be understood from the electronic coniguration. Figure 25.1 shows electronic coniguration of iron atom, which contains four unpaired electrons. However, the presence of unpaired electrons is a necessary but not a suicient condition for ferromagnetism. Electrons with higher angular momentum (i.e., higher orbitals) have higher kinetic energy, and thus they have lower potential energy and potential energy is in turn responsible for the correlation. herefore, the most signiicant contribution to the magnetic moment is from unpaired electrons closest to the nucleus. hat is why heavy elements like Gd (Figure 25.1c) with its eight unpaired electrons do not have large magnetic moments. Magnetic periodic table (Skomski and Coey 1995, Coey and Sanvito 2004) includes three islands of magnetic stability: one around 3d elements Fe, Ni, Co; one around the 3f element Gd; and one around oxygen, which is known to order

25-3

Nanomagnetism in Otherwise Nonmagnetic Materials

Magnetic periodic table

H

He

Be

B

C

N

O

F

Ne

Na Mg

Al

Si

P

S

Cl

Ar

Cr Mn Fe Co Ni Cu Zn Ga Ge As

Se

Br

Kr

In Sn Sb

Te

I

Xe

Tl Pb

Po At

Li

K

Ca

Sc

Ti

V

Rb

Sr

Y

Zr Nb Mo Tc Ru Rh Pd Ag Cd

Cs Ba

Lu Hf

Ta W

Re Os

Fr

Lr

Db Sg

Bh Hs Mt Uun Uuu Uub

Ra

Rf

Ir

Pt Au Hg

Bi

Ra

Uuq

La Ce Pr Nd Pm Sm Eu Gd Tb Dy Ho Er Tm Yb Ac Th Pa

U Np Pu Am Cm Bk

Cf

Es Fm Md No

FIGURE 25.2 he magnetic periodic table. Shaded cells are the “islands of magnetic stability.” Elements which are able to form ferromagnetic and antiferromagnetic compounds are cross-hatched black and white correspondingly. (Adapted from Coey, M. and Sanvito, S., Phys. World, 17, 33, 2004.)

antiferromagnetically at 22 and 30 K (Figure 25.2). Oxygen is the only element without unpaired d or f electrons that orders magnetically (Meier and Helmholdt 1984). Whereas in usual materials, magnetism is determined mainly by the choice of constituting elements from the periodic table, in nanometer-scale materials the above statement is not true. When the sample of a material becomes small or modiied in the nanometer scale, shapes or boundaries in nanostructures, defects, and vacancies play important roles in characteristics of electron states (Oshiyama and Okada 2006). A term “d-zero ferromagnetism” (Coey 2005) was coined in response to a growing number of reports on hexaborides, metal oxides, and carbon structures displaying small ferromagnetic moments despite the absence of atoms with partially illed d or f shells. Speaking about materials that are nonmagnetic in the usual state, one can supplement the list with nonmagnetic metals like Au, Pd, Ru, and Rh, which, in nanoscale, may also exhibit magnetism, and with semiconductor nanoparticles and quantum dots GaN, CdS, CdSe. In all cases, the unexpected collective behavior, also known as emergent behavior, is related to the nanometer-scale changes of the structure. he weakness of the ferromagnetic signal and low reproducibility are common features of these publications. hey give rise to understandable doubts concerning the intrinsic origin of some of the reported data. However, in many cases, the content of metallic impurities is too low to account for the observed value of magnetization. By now, the impurity scenario is rather unlikely, since it cannot explain recurring regularities in structure–property relationships. he magnetic properties of the ferromagnetic nanostructures are highly sensitive to the conditions of synthesis or subsequent annealing. Analysis of the synthesis and annealing conditions provides the basis for the models for ferromagnetism in these systems. In several cases, the i rm evidence for magnetism in nonmagnetic materials has been obtained from elementally sensitive magnetic measurements like x-ray magnetic circular dichroism. his is the case of Au, Ag, Cu nanoparticles, some oxides, and graphite.

25.3 Formation of Magnetic State through Introducing Nonmagnetic sp Elements to Nonmagnetic Matrices Promising materials for spintronic applications are magnetic half-metals (MHMs) (see Katsnelson et al. 2008 for a review), i.e., systems that are characterized by nonzero density of carriers at the Fermi level (EF) for only one spin direction, say, up, (N↑(EF) > 0), but there is an energy gap (FG) for the reverse spin projection (N↓(EF) = 0) (Figure 25.3). herefore, in the ideal case, spin density polarization at the Fermi level is P=

N ↑ (EF )− N ↓ (EF )

N ↑ (EF )+ N ↓ (EF )

=1

As a result, the electric current in magnetic half-metals is accompanied by a spin current, and MHM materials exhibit nontrivial spin-dependent transport properties (ater Ivanovskii 2007). Metal

EF

Semiconductor

EF

Magnetic half-metal

EF

FIGURE 25.3 Density of states for the metallic, semiconducting and metallic half metal states. (Reprinted from Edwards, D.M. and Katsnelson, M.I., J. Phys.: Condens. Matter, 18, 7209, 2006. With permission.)

25-4

he MHM materials are manufactured by doping semiconductor hosts with magnetic atoms, and these materials are called dilute magnetic semiconductors (DMS). he physical picture of magnetism in the DMS is described by Zener’s p–d exchange mechanism and superexchange mechanism that compete to determine the magnetic states (Katayama-Yoshida et al. 2007, Dietl 2008). hese materials are reviewed in several papers (see, for example, a recent review (Jungwirth et al. 2006)). Dilute magnetic systems include manganites LaSrMnO3 (Salamon and Jaime 2001) and diluted magnetic semiconductors like GaMnAs (Ohno 1998). Still, the ordering temperatures in DMS are far below room temperature. Semiconducting or insulating oxides like ZnO doped with several percent of transition metal cations were predicted (Dietl et al. 2000) and found experimentally to be ferromagnetic at room temperature. hese materials are described below. However, there is growing evidence that the experimental observations are incompatible with a picture based on magnetic moments carried by the d-electrons of the transition metal cations mediated by the itinerant electrons. he main areas of discussions range from indirect d-electron exchange interaction mediated by defects (Kittilstved et al. 2006) to parasitic ferromagnetism. An unexpected fact that the oxides do not need magnetic cations to become ferromagnetic turned the discussions to recognition of a novel type of magnetism, which is tentatively called interface magnetism. here are many theoretical and experimental conirmations that under certain conditions magnetism arises without transition metal elements. he best known example of a magnetic p-compound is molecular oxygen, which orders in an antiferromagnetic fashion. Nonmetallic impurities as well as intrinsic defects in metal-free compounds may ofer a path to new ferromagnetic materials. It is shown theoretically that ferromagnetism can be induced in CaO with calcium vacancies (Eli mov et al. 2002), boron, carbon, or nitrogen-doped CaO (Kenmochi et al. 2004), calcium pnictides, i.e., CaP, CaAs, and CaSb with the zinc blende structure (the pnictides are the compounds of phosphorus, arsenic, antimony, and bismuth) (Kusakabe et al. 2004). here are persistent indications that small ferromagnetic moment in CaB6 (Young et al. 1999), which depends on sample stoichiometry and heat treatment (Loland et al. 2003) and is observed in impurity-free disordered thin i lms (Dorneles et al. 2004), is not the result of trivial sample contamination. he same picture emerges for another system with closed shell coniguration, oxide i lms, metal nanoparticles, semiconductor quantum dots and interfaces, and carbon nanostructures. Two main reasons for nontrivial magnetism are considered: 1. Dopants that come to the spin-polarized state and order ferromagnetically. 2. Magnetism due to nonstoichiometry (Ivanovskii 2007), including increasingly observed phenomenon of “interfacial magnetism” (Hernando et al. 2006a,b), charge transfer ferromagnetism (Coey et al. 2008), and some exotic phenomena like “even-odd efects” (Lounis et al. 2008).

Handbook of Nanophysics: Principles and Methods

25.4 Ferromagnetism in Hexaborides: Discovery, Disproof, Rebuttal 25.4.1 Discovery Young et al. (1999) reported ferromagnetism in La-doped calcium hexaboride (CaB6) in which a few of the calcium atoms a replaced with lanthium atoms. h is discovery was taken as a mark of a long-sought mechanism for ferromagnetism in metals, where the “electron gas” is susceptible to magnetic ordering at low density (Ceperley 1999); in other words, a phenomenon of high-temperature weak ferromagnetism at low-carrier concentration (HTFLCC) with no atomic localized moments. Later unusual ferromagnetism in hexaborides was reported for undoped MB6 (M = Ca, Sr, Ba) (Ott et al. 2000; Vonlanthen et al. 2000). None of the constituent elements in these compounds possess partially i lled d or f levels, and these reports were considered as the irst clear evidence of magnetism in otherwise nonmagnetic materials. Sharp decrease in saturation with the increase of doping level ruled out the efects of an accident contamination but required consideration from the viewpoint of the electronic band structure. One school of thought attributed this phenomenon to the polarization of low density electronic gas and another school of thought to the hole doped excitonic insulator, whereas several authors insisted that the mechanism for magnetism in this compound is strongly connected to defects. At the moment of the discovery of weak ferromagnetism, alkaline-earth hexaborides were believed to be either semiconductors or semimetals, in close vicinity to the border between semimetals and small-gap semiconductors and having a peculiar coniguration of the electronic excitation spectrum: the valence and conduction band are separated with a gap in all points of the Brillouin zone, except for the Χ points, where a weak overlap does exist (Massidda et al. 1997). Low electron doping with La3+ (order of 0.1%) was shown to result in an itinerant type of ferromagnetism stable up to 600 K (Young et al. 1999) and almost 1000 K (Ott et al. 2000). he saturation magnetic moment is quite sensitive to the doping level and reaches 0.07 μB/electron, the electron density being 7 × 1019 cm−3. Taking into account the absence of localized magnetic moments, magnetic order was ascribed to the itinerant charge carriers: a ferromagnetic phase of a dilute three-dimensional electron gas (Ceperley 1999, Young et al. 1999). A diferent approach is based on the formation of excitons between electrons and holes in the overlap region around the Χ point (Zhitomirskyi et al. 1999, Murakami et al. 2002). Electrons and holes are created as a result of the band overlap. Coulombic attraction between these electrons and holes can lead to a condensation of the bound exciton pairs. Condensation opens a gap in the quasiparticle spectrum. Excitonic insulator is thus created, which contains a condensate of a spin-triplet state of electron–hole pairs. A ferromagnet with a small magnetic moment but with a high Curie temperature can be obtained by doping an excitonic insulator. Doping provides electrons to the conduction

25-5

Nanomagnetism in Otherwise Nonmagnetic Materials

band, change the electron–hole equilibrium, pairing becomes less favorable, and extra electrons are ferromagnetically aligned. he idea of ferromagnetic instability in the excitonic metal was further developed by adding the efect of imperfect nesting on the excitonic state (Veillette and Balents 2002). ESR experiments give some evidence that ferromagnetism of hexaborides is not a bulk phenomenon, but spins exist only within the surface layer approximately 1.5 μm thick (Kunii 2000). Band calculations (Jarlborg 2000) demonstrated a possibility for ferromagnetism below the Stoner limit in doped hexaborides, and the phenomenon has been attributed to various defects. Observations of anomalous NMR spin–lattice relaxation for hexaborides showed the presence of a band with a coexistence of weakly interacting localized and extended electronic states (Gavilano et al. 2001). Measurements of thermoelectric power and the thermal conductivity in the range of 5–300 K showed that it is described by scattering of electrons on acoustic phonons and ionized impurities in the conduction band, which is well separated from the valence band (Gianno et al. 2002). The explanation of the origin of weak but stable ferromagnetism with the model of a band overlap has become a problem. he starting point of the majority of models has been a semimetallic structure with a small overlap. However, parameterfree calculations of the single-particle excitation spectrum based on the so-called GW approximation predict a rather large band gap. In this case, CaB 6 should not be considered a semimetal but as a semiconductor with a band gap of 0.8 eV (Tromp et al. 2001). Angle-resolved photoemission provides an answer for the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped band gap insulators: there is a gap between the valence and conduction bands in the X point, which exceeds 1 eV (Denlinger et al. 2002). Assuming that CaB 6 is a semiconductor, magnetism is considered to be due to a La-induced impurity band, arising on the metallic side of the Mott transition for the impurity band (Tromp et al. 2001). he magnetic properties of these structures have been considered from the point of view of imperfections in the hexaboride lattice. It has been found that of all intrinsic point defects, the B vacancy bears a magnetic moment of 0.04 μB. he ordering of the moments can be understood assuming that in the presence of compensating cation vacancies, a B6 vacancy cannot be neutral (Monnier and Delley 2001). A support for the impurityband mechanism has been found from the electrical and magnetic measurements on several La-doped samples (Terashima et al. 2000): all the samples show metallic behavior of conductivity. Prepared at nominally identical conditions, some of the samples are paramagnetic and some are ferromagnetic, suggesting that ferromagnetic state can be spatially inhomogeneous. On the other hand, the models for a doped excitonic insulator also included spatial inhomogeneity (Balents and Varma 2000) and phase separation with appearance of a superstructure (Barzykin and Gorkov 2000).

25.4.2 Disproof Shortly ater the striking observation of high-temperature weak ferromagnetism, a discussion was opened concerning the possibility of a parasitic origin of the hexaboride ferromagnetism (Matsubayashi et al. 2002). Ferromagnetic CaB6 and LaB6 were created with the magnetic properties, including the Curie temperature, similar to reported earlier. hese magnetic samples were washed in HCl several times, and the mass of the washed-out iron was measured. Linear dependence of magnetization reduction versus iron mass apparently let no doubts that high-temperature ferromagnetism in hexaborides is not intrinsic but that is instead due to alien phases of iron and boride, namely FeB and Fe2B that have the Curie temperatures at 598 and 1015 K, respectively. Replying to the claims, the authors of the pioneering work (Young et al. 2002) noted that these new indings did not contradict their picture (Fisk et al. 2002) where the magnetism is due to strongly interacting magnetically active defects in of-stoichiometric CaB6 crystals. In single crystals of CaB6 with intentionally added iron, no dependence of the measured ordered moment on the iron concentration was found, suggesting that alien Fe–B phases are not the source of ferromagnetism. he important point here is that not only iron, but also surface moments are removed in acid solution. here is the experimental evidence that during the sample storage in air, magnetization is enhanced and the ordering temperature progressively increases. Were the ferromagnetism due to the Fe contribution, the formation of Fe oxides in air would lead to opposite results. he discussion inally arrived at the conclusion that iron with a concentration of about 0.1 at.% is indeed involved in the weak high-temperature ferromagnetism of CaB6 although the exact mechanism is still unclear and probably highly nontrivial (Young et al. 2002). he evidence that transition metals might play a role in ferromagnetism of CaB6 raised doubts about the very existence of magnetism in otherwise nonmagnetic materials. he magnetism could be ascribed to iron impurities originating from the crucible used in the synthesis (Matsubayashi et al. 2003), from boride commercial powders, boron powder, and from aluminum metal, used in signiicant quantity as a lux for crystal growth (Otani and Mori 2002, 2003, Mori and Otani 2002). he speculations that the ferromagnetism is due to the defect surface states have been refuted by the argument that the iron is concentrated in the surface region, as the Auger depth proi les demonstrated (Meegoda et al. 2003). Electron microprobe experiments reveal that Fe and Ni are found at the edges of facets and growth steps, which served as the indication of extrinsic origin of weak ferromagnetism in undoped CaB6 (Bennett et al. 2004). hese indings made two of the authors of the original report (Young et al. 1999) to state that “the weak ferromagnetism in electron-doped CaB6 is extrinsic, due to surface contamination by ferromagnetic compounds containing Fe and Ni” (Bennett et al. 2004). he authors made however an important note that the data do not exclude the existence of an intrinsic ferromagnetic phase, which is masked by a strong extrinsic signal.

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Handbook of Nanophysics: Principles and Methods

E

25.4.3 Rebuttal he recognition of an unpleasant truth that ferromagnetic metals concentrate at the edges of facets and growth steps (Bennett et al. 2004) did not stop investigations in this area. here were questions that had to be answered. For instance, the presence of transition metals could not account for the dependence of magnetism on La or Ca concentration (Young et al. 2002, Cho et al. 2004) as well as the fact that the magnetization is enhanced and the ordering temperature progressively increases during the sample storage in air. Again, were ferromagnetism due to the Fe contribution, the formation of Fe oxides in air would lead to opposite results because iron oxides have lower values of both the magnetization and Curie temperature (Loland et al. 2003). For CaB6 samples grown from Al lux, which was deliberately contaminated with a wide Fe, no dependence of the saturation magnetization on Fe concentration was found (Young et al. 2002). he understanding that iron is somehow involved in the ferromagnetism of CaB6 has not stopped claims that magnetism is of a nontrivial origin. Having studied CaB6 crystals of different purity, the experimenters analyzed the formation of the mid-gap states and suggested that the exotic ferromagnetism in CaB6, in part, cannot be ascribed to a magnetic impurity (Cho et al. 2004). Further development showed that the retraction of the original ideas concerning an intrinsic nature of magnetism in hexaborides (Bennett et al. 2004) was indeed premature. he experiments on thin i lms (Dorneles et al. 2004) have shown that Fe/Ca atomic ratio exceeding 100% would be needed to explain the sample magnetization. Huge magnetic moments were detected at the surface layers of thin i lms of disordered CaB6 and SrB6 i lms deposited by pulsed-laser deposition on MgO (100) or Al2O3 (001) substrates. he moment, which is present in i lms as thin as 12 nm, appears to reside in an interface layer where the magnetization density corresponds to approximately 0.4 T (Dorneles et al. 2004). Lattice defects are suggested as the origin of the high-temperature magnetism in hexaborides. Ab initio calculations (Maiti 2008) show that a vacancy in the boron sublattice leads to the formation of an impurity band in the vicinity of the Fermi level, which exhibits inite exchange splitting and, therefore, a magnetic moment. Supporting this theoretical prediction, a photoemission study (Rhyee and Cho 2004) reveals the presence of weakly localized states in the vicinity of the Fermi level in the ferromagnetic CaB6, whereas it is absent in the paramagnetic LaB6 (Medicherla et al. 2007). All these results suggest that the nature of ferromagnetism is intrinsic. Its nature is different from that of diluted magnetic semiconductors because it is related to the presence of localized states at the Fermi level originating from the boron vacancies (Maiti et al. 2007). Itinerant electron ferromagnetism in a narrow impurity band has been compared to the well-known case of the 3d band of transition metals (Edwards and Katsnelson 2006). Figure 25.4 shows the energy spectrum for the 3d-band bulk case (a) and for the impurity band, which contains a broad main band and a narrow impurity band. In the d-band bulk case, a weak itinerant

EF

(a) N (E)

N (E) E

EF (b) N (E)

N (E)

FIGURE 25.4 Schematic density of states for (a) a weak itinerant ferromagnet and (b) the ferromagnetic impurity band model. (Reprinted from Edwards, D.M. and Katsnelson, M.I., J. Phys.: Condens. Matter, 18, 7209, 2006.)

electron ferromagnetism is due to a small exchange splitting between majority (↑) and minority (↓) spin bands (Figure 25.4a). Complete spin alignment of low-density carriers takes place in an impurity band (Figure 25.4b). he Stoner criterion is satisied due to a high density of states in the narrow impurity band, and ferromagnetism is achieved. he impurity band scenario of magnetism is qualitatively similar to the case of ferromagnetic transition metals. In the CaB6 case, the role of the d band is played by a narrow impurity band formed from boron p orbitals, and the conduction band is formed by calcium d orbitals. he boron lattice is regarded as formed from B2 dimers, and the nature of magnetic ordering is analogous to another second-row dimer, O2. he spins of two p electrons in B2 are aligned by the Hund’s rule mechanism, similar to the alignment of the transition metal d band. he model (Edwards and Katsnelson 2006) is able to explain not only ferromagnetism of undoped CaB6, but also sheds light on the nontrivial role of iron in iron-contaminated samples: It is conceivable that Fe is a defect that leads to a partially occupied impurity band just above the valence band. Magnetism of hexaborides is associated with the impurities, but they need not to be intrinsically magnetic: an impurity band responsible for RTFM in CaB6 is quite independent of whether or not the defects responsible for the impurity band are magnetic impurities. In this section we have followed the evolution of the understanding of unconventional ferromagnetism phenomenon in transition metal-free hexaborides, MB6, where M = Ca, Sr, Ba, etc. Obviously, the exotic ferromagnetism shown by the hexaborides

Nanomagnetism in Otherwise Nonmagnetic Materials

is far from being understood, and this development is in line with the old wisdom that “For every complex problem there is an answer that is clear, simple, and wrong” (Mencken 1920).

25.5 Magnetic Semiconducting Oxides Dilute magnetic oxides (DMO) is another example of systems where magnetism appears eh nihilo (Coey 2005b). A challenge of current research is to verify the very existence of intrinsic magnetism in these materials and to ind out its origin. DMO were initially considered as a variety of diluted magnetic semiconductors DMS, like doped III–V compounds like (Ga, Mn) As, or II–VI materials such as (Zn, Mn)Te alloys. he intrinsic ferromagnetic order in DMS is presumably mediated by mobile charge carriers. his feature is favorable for spintronics application since it allows one to inluence magnetic behavior through charge manipulation. As predicted by Dietl et al. (2000) ZnO and GaN can be the host candidate for the room-temperature ferromagnetic DMS. At present, there is no consensus on the source of ferromagnetism in DMO, but there is growing evidence that the mechanism responsible for the emergent behavior is diferent from DMS and stems from the interface efects (Brinkman et al. 2007, Hernando et al. 2006a,b), although the carrier mediation mechanism is still under discussion (Durst et al. 2002, Calderón and Das Sarma 2007).

25.5.1 Zink Oxide First observations of magnetism in DMO were made on the oxides TiO2 (Matsumoto et al. 2001) and ZnO (Ueda et al. 2001) doped with a transition metal cobalt. Immediately, the question has been raised whether the reported magnetism is an intrinsic efect or it is a trivial one, due to nanoclusters of the transition metal magnetic impurity (Norton et al. 2003), since some studies reported the phase separation and the formation of ferromagnetic clusters (see Janisch et al. 2005 for a review). Surprisingly, the most recent results have demonstrated that oxide thin i lms or nanostructures do not need magnetic cations to become magnetic. Coey et al. found room-temperature ferromagnetism in non-transition-metal-doped ZnO (Coey et al. 2005a). Ferromagnetism in ZnO single crystals was triggered by the implantation of Ar ions with an energy of 100 keV (Borges et al. 2007). Experiment and theory conirmed that carbon induces ferromagnetism in nonmagnetic ZnO oxides (Pan et al. 2007). Apparently, the efect is connected with the presence of implantation-induced lattice defects. Enhancement of ferromagnetism upon thermal annealing was found in pure ZnO (Banerjee et al. 2007) and explained by the formation of the anionic vacancy clusters where the magnetic state is achieved either through the superexchange between vacancy clusters via isolated F+ centers or through a limited electron delocalization between vacancy clusters. Surprisingly, such a magnetically strong element as cobalt suppresses ferromagnetism in ZnO. Ghoshal and Kumar (2008) were able to achieve ferromagnetic state in ZnO i lms without

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transition metals, just by tuning the oxygen content in the i lm. Co doping of the intrinsically magnetic i lms suppressed the magnetization of the i lms. he experiments of Xu et al. (2008) attribute the observed ferromagnetism in ZnO i lms to zinc vacancies and not to oxygen. he authors suggest that a careful control of defects in ZnO rather than doping with magnetic ions might be possibly a better method to obtain reproducible, intrinsic, and homogeneous ferromagnetism in ZnO at room temperature. A comparative irst-principles study has been done for ZnO in both pure and cobalt-doped states (Sanchez et al. 2008). A robust ferromagnetic state is predicted at the O (0001) surface even in the absence of magnetic atoms, correlated with the number of p holes in the valence band of the oxide. ZnO nanowires prepared by oxidation of electrodeposited Zn wires show ferromagnetism at room temperature (Yi et al. 2008). A detailed study indicates that, owing to incomplete oxidation, Zn clusters embedded in the ZnO matrix may attribute to the room-temperature ferromagnetism. Another method for triggering RTFM in ZnO i lms, namely, by deposition of nonmagnetic metallic clusters on the surface of ZnO i lm has been demonstrated (Ma et al. 2008). Both transmission electron microscopy and x-ray photoelectron spectroscopy suggest that the observed RTF is associated with the presence of the clusters of some of nonmagnetic metals. ZnO i lms covered with Zn, Al, and Pt do show room temperature ferromagnetism ater vacuum annealing while (Ag, Au)/ZnO i lms do not. In addition, the ferromagnetism is normally destroyed when the metal clusters are oxidized. Even so, the magnetism, which is destroyed by oxidation of the Al/ZnO structure, survives in the case Pt/ZnO. he latter result speaks in favor of the model of the cluster-triggered ferromagnetism because Pt is stable against oxidation. A clear evidence that RTFM in nanocrystalline ZnO is governed by defects comes from the experiments where paramagnetic ZnO becomes ferromagnetic once oxygen defects are introduced in it (Sanyal et al. 2007). Room-temperature ferromagnetism (FM) has been observed in laser-ablated ZnO thin ilms. he FM in this type of compound does not stem from oxygen vacancies as in the case of TiO2 and HfO2 ilms, but from defects on Zn sites, which are located mostly at the surface and/or the interface between the ilm and the substrate (Hong et al. 2007a,b). Size and shape of nanocrystals are important as follows from the observation of RTFM in ZnO nanorods with diameters about 10 nm and lengths of below 100 nm (Yan et al. 2008). Ferromagnetic order can be induced in ZnO by 2p light element (N) doping (Shen et al. 2008) or by means of Fe ion implantation or just by vacuum annealing at mild temperatures without any transition metal doping (Zhou et al. 2008). Comparison of the results obtained on the samples with and without magnetic atoms speaks against the DMS model where magnetic coupling of localized d-moments of the implanted Fe, and FM properties are discussed with respect to defects in the ZnO host matrix. In the context of the discussions of the role of magnetic impurity clustering, Cu-doped ZnO is an interesting examples

25-8

because Cu atoms do not have clustering tendency and neither of Cu-based compounds is ferromagnetic. RTFM in Cu-doped ZnO was theoretically predicted (Park and Min 2003, Park et al. 2003, Wu et al. 2006, Ye et al. 2006) and observed experimentally (Ando et al. 2001, Cho et al. 2004, Chakraborti et al. 2007, Hou et al. 2007, Xing et al. 2008). However, a magnetic circular dichroism study in Cu-doped ZnO thin i lms did not show any signiicant spin polarization on the Cu 3d and O2 p states, although the samples showed RTFM and were free of contamination (Keavney et al. 2007). Several Cu-doped oxides have been studied (Dutta et al. 2008), but only ZnO oxide demonstrates ferromagnetic behavior, and thus the CuO phase is suggested to be a paramagnet. A comparative study on Cu-doped ZnO nanowires prepared by two distinct methods and demonstrated unambiguously an enhancement of RTFM by structural inhomogeneity (Xing et al. 2008). he results suggest that RTFM is not a homogeneous bulk property, but a surface efect by nature: the alteration of the electronic structure induced by impurities and defects plays an important role in magnetism (Buchholz et al. 2005, Garcia et al. 2007, Seehra et al. 2007). Several diferent explanations for the behavior of Cu-doped ZnO materials have been proposed, and the model of oxygen vacancies (Chakraborti et al. 2007) contradicts the DFT calculations (Ye et al. 2006), which show that vacancies tend to destroy ferromagnetism. In the experiments on ZnO:Cu nanowires (Shuai et al. 2007), the samples annealed in oxygen showed stronger RTFM than those annealed in Ar, and this result speaks against the oxygen vacancies. he authors believe that FM occurs due to the hybridization between partly occupied Cu 3d bands and O 2p bands: these energy levels are closely situated, and the delocalized holes induced by O 2p and Cu 3d hybridization can eiciently mediate the ferromagnetic exchange interaction (Huang et al. 2006). XMCD studies on Co and Li doped ZnO have not revealed any element-speciic signature of ferromagnetism. Only paramagnetic signal was recorded from cobalt. his result suggests that RTFM in doped ZnO has an intrinsic origin and is caused by the oxygen vacancies (Tietze et al. 2008). Ferromagnetism was observed in Ga-doped ZnO i lms, and the following mechanism has been proposed (Bhosle and Narayan 2008): • Ferromagnetism is attributed to oxygen vacancies. • he vacancies act as F-centers and trap free electrons. • he trapped electrons tend to get easily polarized under the inluence of the magnetic ield. • he F-centers freeze the spin, resulting in almost temperature-independent magnetism. • RTFM is greatly facilitated by the high concentration of free carriers. he mechanism has been veriied by the experiments on the i lms deposited at diferent technological conditions and, therefore, diferent vacancy and free carrier concentrations. he experiments show that RTFM decreases with the decrease of the concentrations. Supporting evidence comes from annealing,

Handbook of Nanophysics: Principles and Methods

which leads to the decrease of both the F-center and free carrier concentration and RTFM quenching. Upon annealing, three efects were observed simultaneously: the redshit of the optical absorption edge, the decrease in the carrier concentration and the oxygen vacancies obtained from electrical resistivity and Hall measurements, and loss of ferromagnetism. A suggestion has been made about the role of Ga in inducing RTFM in the ZnO system: irst, Ga alters the energy levels in oxygen vacancies, and second, it provides additional carriers and thus enhances the free carrier mediation of the spin interaction of the polarized F-centers. hese results clearly demonstrate the dependence of magnetic properties on the vacancy concentration in ZnGaO i lms. But the model of oxygen vacancies is not the only one that is under consideration. he observed magnetism could be due to Zn vacancy rather than O vacancy, and magnetic moment arises from the unpaired 2p electrons at O sites surrounding the Zn vacancy (Wang et al. 2008a,b). What has become clear now is that ZnO can show ferromagnetic properties from defects created by doping, implantation, or annealing. An easy way to create defect induced ferromagnetism in ZnO by means of mechanical force has been recently found (Potzger et al. 2008), and this is an easy mechanical approach using a conventional hammer and producing small “lakes” of ZnO. here is large evidence that the ferromagnetic signal comes from strain or domain boundaries in the lakes.

25.5.2 Titanium Oxide Similar results were obtained from the experiments on titanium oxide i lms. Films of TiO2, which showed ferromagnetism at room temperature, were manufactured by various deposition techniques: spin-coated TiO2 thin i lms or pulsed laser ablated TiO2 thin i lms. he fact that in thick i lms deposited under the same conditions the magnetic ordering degraded enormously give the grounds to suggest that not only defects but also the coninement efects seem to be important. A semiconducting material, TiO2–δ is ferromagnetic up to 880 K, without the introduction of magnetic ions (Yoon et al. 2006). he subscript (2–δ) implies oxygen deiciency in the samples, or the presence of oxygen vacancies. Magnetism in these i lms is controlled by anion defects. Magnetism scales with conductivity, suggesting the double exchange interaction scenario. Unprecedentedly strong RTFM has been observed in TiO2–δ nanoparticles synthesized by the sol-gel method and annealed under diferent reducing atmosphere (Zhao et al. 2008). In a model of oxygen vacancies, the authors (Zhao et al. 2008) explain their results by the aggregation of the oxygen vacancies. his process is more pronounced for small-size nanoparticles that have a larger surface-to-volume ratio. Pure TiO2 thin i lms produced by both spin-coating and sputter-deposition techniques on sapphire and quartz substrates demonstrated RTFM when annealed in vacuum (Sudakar et al. 2008), while the air-annealed samples showed much smaller, oten negligible, magnetic moments.

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Nanomagnetism in Otherwise Nonmagnetic Materials

Spin-coated pristine TiO2 thin i lms show magnetic behavior similar to that of pulsed laser ablated TiO2 thin i lms (Hassini et al. 2008). Observation of the same efect on the i lms obtained by diferent deposition techniques instills conidence in the intrinsic nature of ferromagnetism. Two other observations give an additional support: (1) annealing in the oxygen atmosphere degrades the moment and (2) thicker i lms deposited at the same conditions have the magnetic ordering degraded enormously. Consequently, two factors are considered: i rst, defects and/or oxygen vacancies and second, coninement efects seem to be important. he set of experimental data on transition metal-free oxides raised the question: Does Mn doping play any key role in tailoring the ferromagnetic ordering of TiO2 thin i lms? (Hong et al. 2006a,b) When the Mn concentration is small and does not distort the TiO2 structure, it enhances the ferromagnetic component into the magnetic moment of the already ferromagnetic TiO2 i lm base, which is already ferromagnetic, and then enhances it. But at higher concentrations, Mn drastically degrades and destroys the ferromagnetic ordering. hese experiments show that Mn doping indeed does not play any key role in introducing FM in TiO2 thin i lms. In other words, magnetic semiconducting oxides cannot be considered as a variety of dilute magnetic semiconductors DMS: DMO are not DMS.

25.5.3 Hafnium Oxide Unexpected magnetism was observed in undoped HfO2 thin i lms on sapphire or silicon substrates (Venkatesan et al. 2004). While for the i lms prepared by pulsed laser deposition the results were conirmed (Hong et al. 2006a,b), other groups did not observe the efect on the i lms grown by metallorganic chemical vapor deposition (Abraham et al. 2005) and by pulsedlaser deposition (Rao et al. 2006). While a very weak signal was observed in lightly Co-doped HfO2 i lms, it came presumably from a Co-rich surface layer (Rao et al. 2006). he ferromagnetic signal measured on pulsed-laser deposited thin HfO2 i lms at diferent oxygen pressure was ascribed to possible tweezer contamination (Hadacek et al. 2007). Similarly, very weak ferromagnetism observed in pure and Gd-doped HfO2 i lms on different substrates was attributed to either impure target materials or signals from the substrates. An intrinsic magnetism was not identiied either on i lms, or on HfO2 powders annealed in pure hydrogen low (Wang et al. 2006a,b). On the theoretical side, the RTFM in the HfO2 system is not forbidden. Isolated cation vacancies in HfO2 may form highspin defect states, resulting in a ferromagnetic ground state (Das Pemmaraju and Sanvito 2005). A model for vacancy-induced ferromagnetism is based on a correlated model for oxygen orbitals with random potentials representing cation vacancies (Bouzerar and Ziman 2006). For certain potentials, moments appear on oxygen sites near defects (Beltran et al. 2008). A speciic nonmagnetic host doping is proposed for HfO2 or ZrO2. Such subtle phenomena as magnetism in otherwise nonmagnetic materials are not immediately noticeable, and one should

excel in experiments to observe the efect. To make closed-shelloxides magnetic, experimental methods are required, which can produce the highly nonequilibrium defect concentrations, and one of these methods is low-temperature colloidal syntheses. Colloidal HfO2 nanorods with controllable defects have been synthesized (Tirosh and Markovich 2007). Defects have been studied by high-resolution electron microscopy and by optical absorption spectroscopy, and it was shown that nanocrystals with a high defect concentration exhibit ferromagnetism and superparamagnetic-like behavior (Shinde et al. 2004).

25.5.4 Other Nonmagnetic Oxides Ferromagnetism in oxides can be induced by the elements of Periodic Table, which have nothing to do with magnetism in the bulk state. Ab initio study (Maca et al. 2008) of the induced magnetism in ZrO2 shows that the substitution of the cation by an impurity from the groups IA or IIA of the Periodic Table (K and Ca) leads to opposite results: K impurity induces magnetic moment on the surrounding O atoms in the cubic ZrO2 host while Ca impurity leads to a nonmagnetic ground state. Moreover, the authors suggest switching on/of ferromagnetism in potassium doped oxides by density of states tuning through applying the gate voltage. Similarly, experiments on Mn-doped SnO2 i lms show that a transition metal doping does not play any key role in introducing FM in the system (Hong et al. 2008). Mn doping, even if with a small content, degrades the structure of the SnO2 host and reduces its magnetic moment. Both oxygen vacancies and coninement efects are assumed to be key factors in introducing magnetic ordering into SnO2. Observation of room-temperature ferromagnetism in nanoparticles of nonmagnetic oxides such as CeO2, Al2O3, ZnO, In2O3, and SnO2 (Sundaresan et al. 2006) lead to a conclusion that is probably adventurous: Ferromagnetism is a universal feature of nanoparticles of otherwise nonmagnetic oxides. To explain the origin of ferromagnetism in these nonmagnetic oxides, they assumed the existence of oxygen vacancies at the surfaces of these nanoparticles. Nanoparticles of cerium oxide show distinct dependence of magnetic properties on particle size and shape. CeO2 nanoparticles and nanocubes have been investigated both experimentally and theoretically (Ge et al. 2008), and it is found that monodisperse CeO2 nanocubes with an average size of 5.3 nm do show ferromagnetic behavior at ambient temperature. First-principles calculations reveal that oxygen vacancies in pure CeO2 cause spin polarization of f electrons for Ce ions surrounding oxygen vacancies, resulting in net magnetic moment for pure CeO2 samples. he role of particle size is actually played by the surface area because an oxygen vacancy at surface induces more magnetic moments than in bulk. he role of oxygen is, however, a controversial point: size-dependent ferromagnetism in cerium oxide nanostructures was found to be independent of oxygen vacancies (Liu et al. 2008). Ferromagnetism in nanosized CeO2 powders was studied in nanoparticles of diferent sizes but found

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only in sub-20 nm powders. Annealing studies combined with photoluminescence measurements showed that oxygen vacancies did not mediate ferromagnetism in the samples. Remarkable room-temperature ferromagnetism was observed in undoped TiO2, HfO2, and In2O3 thin i lms (Hong et al. 2006a,b). On the other hand, in another study, no trace of ferromagnetism has been detected in In2O3 even with samples sintered under argon, except extrinsic ferromagnetism for samples with magnetic dopant concentrations exceeding the solubility limit (Berardan et al. 2008). he room-temperature weak ferromagnetism of amorphous HfAlOx thin i lms has been demonstrated (Qiu et al. 2006) and it is argued that interfacial defects are one of the possible sources of the weak ferromagnetism. Room-temperature size-dependent ferromagnetism was observed in sub-20-nm sized CeO2 nanopowders. In order to check the role of oxygen vacancies, which have been speculated to be the cause of ferromagnetism in undoped oxides, annealing was performed in diferent atmospheres. his study showed that ferromagnetism is not linked to oxygen vacancies, but possibly to the changes of a cation surface defect state. he occurrence of spin polarization at ZrO2, Al2O3, and MgO surfaces is proved by means of ab initio calculations within the density functional theory (Gallego et al. 2005). Large spin moments develop at O-ended polar terminations, transforming the nonmagnetic insulator into a half-metal. he magnetic moments mainly reside in the surface oxygen atoms and their origin is related to the existence of 2p holes of well-deined spin polarization at the valence band of the ionic oxide. he direct relation between magnetization and local loss of donor charge makes it possible to extend the magnetization mechanism beyond surface properties. he creation of collective ferromagnetism in nonmagnetic oxides by intrinsic point defects such as vacancies has been discussed (Osorio-Guillen et al. 2007). his efect is in principle possible, but the minimum concentration of vacancies is eight orders of magnitude higher than the equilibrium vacancy concentration in HfO2 in the most favorable growth conditions. hus, equilibrium growth cannot lead to ferromagnetism, and experimental methods are required that can produce the highly nonequilibrium defect concentrations.

25.6 Magnetism in Metal Nanoparticles Hori et al. (1999) observed magnetism in ∼3 nm gold nanoparticles with an unexpected large magnetic moment of about 20 spins per particle. Since then, several papers reported magnetism in gold nanoparticles with the emphasis on the stabilization of the particles by polymers, diameter dependence of the ferromagnetic spin moment, experimentally (Hori et al. 2004, Reich et al. 2006) and theoretically (Michael et al. 2007) and observation of spin polarization of gold by x-ray magnetic circular dichroism. Self-assembled alkanethiol monolayers on gold surfaces have been reported to show permanent magnetism (Crespo et al. 2004). Ferromagnetic behavior observed in thiol-capped Au

Handbook of Nanophysics: Principles and Methods

nanoparticles (NP) cannot be ascribed to the presence of magnetic impurities. Au nanoparticles with similar size but stabilized by means of a surfactant, i.e., weak interaction between protective molecules and Au surface atoms, are diamagnetic, as bulk Au samples are. Gold nanoparticles (Au NPs) capped with dodecanethiol showed superparamagnetic or diamagnetic behavior depending on its size (Dutta et al. 2007). A thiol is a compound that contains the functional group composed of a sulfur atom and a hydrogen atom (–SH). Alkanes are chemical compounds that consist only of the elements carbon (C) and hydrogen (H) (i.e., hydrocarbons), wherein these atoms are linked together by single bonds. Sulfur has particular ai nity for gold, and alkanes with a thiol head group will stick to the gold surface, and alkane thiols (or alkanethiols, Figure 25.5) are well known for their ability to form monolayers on gold. he discovery of ferromagnetism of gold capped with alkanethiols has convincingly shown that magnetism of oxides does not require transition metal atoms (Crespo et al. 2008). It has been suggested that ferromagnetism is associated with 5d localized holes generated through Au–S bonds (Crespo et al. 2004). hese holes give rise to localized magnetic moments that are frozen due to the combination of the high spin–orbit coupling (1.5 eV) of gold and the symmetry reduction associated with two types of bonding: Au–Au and Au–S. hus, the ferromagnetism stems from the charge transfer processes. According to electron circular dichroism measurements carried out on thiolated organic monolayers on gold (Vager et al. 2004), the magnetic moment originates from the orbital momentum. Highly anisotropic giant moments were also observed for selforganized organic molecules linked by thiols bonds to gold ilms (Carmeli et al. 2003). FM has been observed in gold capped with thiol groups, both in the form of thin i lms and nanoparticles. However, there is a noticeable diference in magnetic behavior: the magnetic moment reaches 10 or even 100 μB per atom) for i lms, but it is extremely low (0:01 μB per atom) for nanoparticles. Probably, this phenomenon is due to the directional nature of the assembled organic layers (Figure 25.6.). Thiol

R

S H

Alkanethiol

Oily tail

Sulfur head S

Monolayer-bound alkanethiols on gold

SH

+

SH

S S S

Au

Au

FIGURE 25.5 Schematic picture of a thiol, an alkanethiol and the formation of an alkanethiol/gold interface.

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Nanomagnetism in Otherwise Nonmagnetic Materials

Au surfaces

FIGURE 25.6 Scheme of the magnetic moments arising at surfaces capped with organic molecules. Due to the spin–orbital interaction, the magnetic moments are i xed in the bond direction that for NPs are uniformly distributed while for i lms there is a unique orientation perpendicular to the surface. (Reprinted from Quesada, A. et al., Eur. Phys. J. B, 59, 457, 2007. With permission.)

Self-assembled monolayers on gold of double-stranded DNA oligomers create a strong and oriented magnetic ield. here is clear diference between monolayers made from single-stranded DNA and those made from double-stranded DNA despite the fact that both molecules are chiral (Ray et al. 2006). X-ray magnetic circular dichroism experiments (Yamamoto et al. 2004) provided direct evidence for ferromagnetic spin polarization of Au nanoparticles with a mean diameter of 1.9 nm. X-ray magnetic circular dichroism is an elementally sensitive method, so in these experiments only the gold magnetization is explored. Magnetization of gold atoms as estimated by XMCD shows a good agreement with results obtained by conventional magnetometry. Further XMCD studies (Negishi et al. 2006) conirmed that the presence of localized holes created by Au–S bonding at the interface, rather than the quantum size efect, is responsible for the spin polarization of gold clusters. Magnetic moment increases with the cluster size but remains constant when calculated for a surface atom. he available explanation of orbital ferromagnetism and giant magnetic anisotropy at the nanoscale (Hernando et al. 2006a,b) assumes the induction of orbital motion of surface electrons around ordered arrays of Au–S bonds. It is considered that electrons are pumped up from the substrate to the molecular layer; at the same time, spin–orbit interaction efects, known to be extremely important in gold surfaces, are taken into account. he experiments with diferent capping agents clariied the role of adsorbing molecules. Two types of thiol-capped gold nanoparticles (NPs) with similar diameters between 2.0 and 2.5 nm and diferent organic molecules linked to the sulfur atom: dodecanethiol and tiopronin have been studied (Guerrero et al. 2008). he third capping agent, tetraoctyl ammonium bromide, has also been included in the investigation since it interacts only weakly with the gold surface atoms and, therefore, this system can serve as a reference sample of naked gold nanoparticles. Modiications of the electronic structure clearly reveals itself by the quenching of the surface plasmon resonance for dodecanethiol capping and its total disappearance for tiopronin-capped NPs (Figure 25.7). Regarding the magnetization, dodecanethiolcapped NPs have a ferromagnetic-like behavior, while the NPs capped with tiopronin exhibit a paramagnetic behavior, whereas

Au NPs: hemispheric cut

(a)

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FIGURE 25.7 Scheme of self-assembled monolayer and nonordered array formation: (a) for dodecanethiol- and (b) for tiopronin-functionalized gold surfaces and gold NPs. he structure of the capping molecules is shown using a “ball–stick” model: hydrogen (white), carbon (gray), nitrogen, oxygen and sulfur (dark-gray). (Reprinted from Guerrero, E. et al., Nanotechnology, 19, 17501, 2008. With permission.)

the reference samples remained diamagnetic. It is has been concluded that straight chains with a well-deined symmetry axis induce orbital momentum, which not only contributes to the magnetization but also to the local anisotropy. Due to the domain structure of the adsorbed molecules, orbital momentum is not induced for tiopronin-capped NPs. he following scenario for the gold nanoscale magnetism has been proposed: Capping gold surfaces with certain organic molecules creates surface bonds. he bonds give rise to magnetic moments, and in the case of atomically lat gold surface the magnetic moments are giant. Due to the strong spin–orbit interaction characteristic to gold, these magnetic moments are blocked along the bond direction showing huge anisotropy (De La Venta et al. 2007). Reversible phototuning of ferromagnetism that was observed in gold nanoparticles passivated with azobenzenederivatized ligands is believed to become the basis for developing future magneto-optical memory (Suda et al. 2008). A direct observation of the intrinsic magnetism of Au-atoms in thiol-capped gold nanoparticles, which possess a permanent

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magnetization at room temperature (Garitaonandia et al. 2008), was obtained by using two element speciic techniques: x-ray magnetic circular dichroism on the L edges of the Au and Au-197 Mössbauer spectroscopy. Besides, silver and copper nanoparticles synthesized by the same chemical procedure also present room-temperature permanent magnetism. he observed permanent magnetism at room temperature in Ag and Cu dodecanethiol-capped nanoparticles proves that the same physics can be applied to more elements, opening the way to new and still not-discovered applications and to new possibilities to research basic questions of magnetism. Two main questions have been answered: is the origin of the magnetism really located on the Au atoms? And if it is so, are there more elements susceptible to induce magnetism on them? XMCD spectra determined the location of the magnetic atoms in the nanoparticles and demonstrated that the efect is observable also on copper and silver (Garitaonandia et al. 2008). Some 4d elements, nominally nonmagnetic, e.g., Ru, Rh, Pd, may also exhibit nanoscale magnetism. Magnetism in Pd nanoparticles has been ascribed to the electronic structure alteration by the twin boundaries at the nanoparticles surfaces (Sampedro et al. 2003). A Pd nanoparticle containing only single Co atom exhibits a single-domain nanomagnet behavior (Ito et al. 2008). Platinum atoms, not magnetic in the bulk, become magnetic when grouped together in small clusters (Liu et al. 2006). Platinum monatomic nanowires were predicted to spontaneously develop magnetism (Smogunov et al. 2008), and it was shown that Pd and Pt nanowires are ferromagnetic at room temperature, in contrast to their bulk form (Teng et al. 2008). Two remarkable efects are observed at the nanowires at low temperatures, namely below 40 K for Pd and 60 K for Pt. he irst one is a magnetic memory efect: Hysteresis loop is not symmetric but shits along the ield’s axis on a certain value HB (biased ield). Another unusual efect is the temperature dependence of the coercive force: while magnetization increases at low temperatures, coercivity becomes weaker. Apparently, this is the consequence of electron localization at low temperatures, which enhances magnetic moment but quenches the exchange interactions between them. he magnetic properties of Ru/Ta mixture drastically change by Xe atom irradiation, and the reason is the formation of small clusters in the Ru/Ta matrix under irradiation (Wang et al. 2006a,b). More surprisingly, potassium clusters display a nontrivial magnetic behavior on the nanoscale: low T ferromagnetism when the clusters are incorporated into zeolite lattice (Nozue et al. 1992). Two models have been invoked to explain this behavior: spin-canting mechanism of antiferromagnet (Nakano et al. 2000) and N-type ferrimagnetism (Nakano et al. 2006), which is constructed of nonequivalent magnetic sublattices of K clusters the matrix. Potassium clusters that are 60 atoms on average, when accommodated in the magnetic nanographene-based porous network, become antiferromagnetic (Takai et al. 2008) due to the charge transfer with the host nanographene. he results on metal i lms and nanoparticles point out the possibility to observe magnetism at nanoscale in materials without

Handbook of Nanophysics: Principles and Methods

transition metals and rare earths atoms, and are of fundamental value to understand the magnetic properties of surfaces.

25.7 Magnetism in Semiconductor Nanostructures Clear evidence of nanoscale magnetism comes from the observation of room-temperature ferromagnetic behavior in semiconductor nanoparticles and quantum dots (Jian et al. 2006), as well at in the heterostructures. Semiconductor nanoparticles show increasing magnetization for decreasing diameter (Neeleshwar et al. 2005). RTFM in undoped GaN and CdS semiconductor nanoparticles of diferent sizes was observed for the particles with the average diameter in the range 10–25 nm. RT saturation magnetization is of the order of 10−3 emu/g, which is comparable to that observed in nanoparticles of nonmagnetic oxides. Agglomerated particles of GaN and CdS loose the FM properties: the saturation magnetic moment decreases with the increase in particles size, suggesting that ferromagnetism is due to the defects conined to the surface of the nanoparticles (Madhu et al. 2008). Ferromagnetism has been also measured in PbS attached to the GaAs substrate (Zakrassov et al. 2008). PbS nanoparticles were attached to GaAs through organic linkers. he magnetization is anisotropic and the magnetic moment reaches saturation for a magnetic ield of about 2000 Oe applied parallel to the surface, while it responds to the magnetic ield almost linearly when the ield is applied perpendicular to the surface. Interestingly, the magnetic anisotropy depends on the alignment of the long axis of the organic molecule linker relative to the surface normal (Figure 25.8). Anisotropy follows the orientation of the long axis of the organic molecule. When the PbS were replaced with CdSe NPs no magnetic signal could be detected. RTFM in CdSe quantum dots (QD) capped with TOPO (trin-octylphosphine) has been observed (Seehra et al. 2008). he strength of magnetism weakens with increase in size of the QDs. his phenomenon is classiied as ex nihilo magnetism since the efect stems from the contact of two diamagnetic materials, namely CdSe and TOPO. he magnetism here is possibly due to the charge transfer from Cd d-band to the oxygen atoms of TOPO.

GaAs

GaAs

FIGURE 25.8 Scheme of the PbS nanoparticles attached to the GaAs substrate via organic molecules when the molecules are aligned parallel (let) or at some angle (right) relative to the surface normal. (Reprinted from Zakrassov, A. et al., Adv. Mater., 20, 2552, 2008. With permission.)

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Nanomagnetism in Otherwise Nonmagnetic Materials

Adsorption of monolayers of organic molecules onto the surface of ferromagnetic semiconductor heterostructures produces large, robust changes in their magnetic properties (Kreutz et al. 2003). Efects of chemisorption of polar organic molecules onto ferromagnetic GaAs/GaMnAs heterostructures has been investigated (Carmeli et al. 2006). he chemisorbed heterostructures exhibit striking anisotropic enhancement of the magnetization, while GaAs substrates physisorbed with the same molecules show no change in magnetic properties. hus, the enhanced magnetism of the chemisorbed heterostructures relects changes in the spin alignment that arise from the surface bonding of the organic monolayer. he adsorption of closed packed monolayers on solid substrates enriches the surface with novel qualities. he new electronic and magnetic properties emerge from the charge transfer from the organized organic layer substrate and, in particular, from the alignment of the spin of the transferred electrons/holes (Naaman and Vager 2006). Defect-induced ma GaN is believed to be due to a Ga vacancy defect, which can show induced local magnetic moment in N atoms (Hong 2008). Cation-vacancy-induced intrinsic magnetism in GaN and BN is investigated, and a dual role of defects is shown: First, the defects create a net magnetic moment, and second, the extended tails of defect wave functions mediate surprisingly long-range magnetic interactions between the defectinduced moments (Dev et al. 2008).

25.8 Ferromagnetism in Carbon Nanostructures 25.8.1 Pyrolytic Carbonaceous Materials Magnetic ordering at high temperatures in carbon-based compounds has been persistently reported since 1986 when several tens of papers and patents describing ferromagnetic structures containing either pure carbon or carbon combined with i rst row elements were published (reviewed in Ref. Makarova 2004). he earlier results on magnetic carbon compounds obtained by pyrolysis of organic compounds at relatively low temperatures were poorly reproducible, and this fact caused natural skepticism about the observed efects.

25.8.2 Graphite A new step in the studies of carbon magnetism started when ferromagnetic and superconducting-like magnetization hysteresis loops in highly oriented pyrolytic graphite (HOPG) samples above room temperature were reported (Kopelevich et al. 2000). Later the authors retracted from superconducting-like hysteresis loops as they had been partially inluenced by an artifact produced by the SQUID current supply, but ferromagnetic behavior remained beyond doubt (Kopelevich and Esquinazi 2007). Absence of correlation between magnetic properties and impurity content was found in highly oriented pyrolytic graphite (Esquinazi et al. 2002), suggesting intrinsic ferromagnetic signal.

25.8.3 Porous Graphite Various independent groups have reported ferromagnetism and anomalous magnetic behaviors in porous graphitic based materials. Ferromagnetic correlations have been observed in activated mesocarbon microbeads mainly composed of graphitic microcrystallites. Magnetization curves measured at 1.7 K showed a marked hysteresis, which becomes less and less visible with increasing temperature although still was present at room temperature (Ishii et al. 1995). he occurrence of high-temperature ferromagnetism has been found in microporous carbon with a three-dimensional nanoarray (zeolite) structure and was associated with the fragments with positive and/or negative curvature (Kopelevich et al. 2003). Similar behavior was described for glassy carbon (Wang et al. 2002). he carbon nanofoam produced by bombarding carbon with a high-frequency pulsed laser in an inert gas displays strong paramagnetic behavior, which is very unusual for the carbon allotropies (Rode et al. 2004). he material contains both sp2 and sp3 bonded carbon atoms and exhibits ferromagneticlike behavior with a narrow hysteresis curve and a high saturation magnetization. Strong magnetic properties fade within hours at room temperature; however, at 90 K the foam’s magnetism persists for up to 12 months. Magnetic behavior of the nanofoam is complex: the nonlinear component does not scale with the H/T which is expected for the superparamagnetism, and the thermal behavior is more consistent with the spin glass picture with unusually high freezing temperature (Blinc et al. 2006). he higher g factors are typical of amorphous carbon systems with signiicant sp3 character, i.e., strongly nonplanar parts of a carbon sheet, and magnetization values at low temperatures 25 times exceed the extrinsic contribution (Arcon et al. 2006). Oxygen-eroded graphite (Mombru et al. 2005, Pardo et al. 2006) shows multilevel ferromagnetic behavior with the Curie temperature at about 350 K.

25.8.4 Carbon Nanoparticles In the experimental studied of carbon nanoparticles magnetization values more than an order of magnitude larger than the expected saturated magnetization due to any possible transition metal impurity were reported. For carbon nanoparticles prepared in helium plasma (Akutsu and Utsushikawa 1999), the saturation magnetization increases with decreasing grain size, and the grain size of the carbon i ne particles having the highest magnetization is 19 nm. More recently, ferromagnetism was found in carbon nanospheres (Caudillo et al. 2006), macrotubes (Li et al. 2007), necklace-like chains and nanorods (Parkansky et al. 2008), and highly oriented pyrolytic graphite nanospheres grown from Pb-C nanocomposites (Li et al. 2008a,b). Interestingly, magnetic carbon nanoparticles have deinite shapes, mainly spherical shapes (Figure 25.9). In the experiments of Parkansky et al. (2008) the particles were magnetically separated, and magnetic particles included and nanotubes and nanorods with lengths of 50–250 nm and spheres with diameters of 20–30 nm whereas nonmagnetic stuf did not have particular shapes.

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Handbook of Nanophysics: Principles and Methods

nm

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FIGURE 25.9 Magnetic carbon nanoparticles. (a) Nanotubes and nanorods with lengths of 50–250 nm and diameters of 20–30 nm. (Reprinted from Parkansky, N. et al., Carbon, 46, 215, 2008. With permission.) (b) Chains of 30–50 nm diameter spheres. (From Parkansky, N. et al., Carbon, 46, 215, 2008.) (c) Nanospheres. (Reprinted from Caudillo, R. et al., Phys. Rev. B, 74, 214418, 2006. With permission.) (d) Pyrolytic carbon nanospheres. (Reprinted from Li, D. et al., J. Phys. D Appl. Phys., 41, 115005, 2008a. With permission.)

25.8.5 Nanographite Various types of magnetic behavior were discovered in nanocarbon derived from graphite. here exists strong experimental evidence that the edge states in nanographite disordered network govern its magnetic properties. One example is nanographite obtained from the heat treatment of nano-diamond particles (Andersson et al. 1998). Strong antiferromagnetic coupling has been found between the spins localized on the surface of similar particles (Osipov et al. 2006). Another example is activated carbon ibers (ACF), which can be considered as a three-dimensional random network of nanographitic domains with characteristic dimensions of several nanometers (Shibayama et al. 2000). Temperature dependencies of the susceptibility taken in zero ield cooled regime indicate a presence of a quenched disordered magnetic structure like a spin glass state. his efect appears in the vicinity of the metal–insulator transition, giving grounds to believe that the coexistence of the edge-state localized spins and

the conduction π-electrons causes the magnetic state in which the exchange interactions between the localized spins are mediated by the conduction electrons (Enoki and Takai 2006). An important proof for the edge-state inherited unconventional magnetism is the magnetic switching phenomenon, which has been found in the activated carbon ibers. Physisorption of water drastically changes magnetic properties, although water itself is nonmagnetic (Sato et al. 2003). Water molecules compress the nanographite domains, reducing the interlayer distance in a stepwise manner. Physisorption leads to the enhancement of the antiferromagnetic exchange interaction of the edge-state localized spins situated at the adjacent nanographene layers (Sato et al. 2007). he physisorption of various guest materials can cause a reversible low-spin/high-spin magnetic switching phenomenon, while physisorption of oxygen molecules is responsible for the giant magnetoresistance of the nanographite network (Enoki and Takai 2008).

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Nanomagnetism in Otherwise Nonmagnetic Materials

25.8.6 Fullerenes Polymer–C60 composite with room-temperature ferromagnetism was irst reported when C60 was ultrasonically dispersed in a dimethylformamide solution of polyvinylideneluoride (Ata et al. 1994). Fullerene hydride C60H36 (Lobach et al. 1998) and C60H24 (Antonov et al. 2002) have been reported to be roomtemperature ferromagnets. Room-temperature ferromagnetism of polymerized fullerenes was irst reported when the samples were exposed to oxygen under the action of the strong visible light (Murakami and Suematsu 1996). In photopolymers saturation, magnetization progressively increases with increasing exposure time (Makarova et al. 2003). he existence of ferromagnetic phase in photolyzed C60 was conirmed by the three methods: (1) SQUID; (2) ferromagnetic resonance in the EPR; and (3) low-ield nonresonance derivative signal (Owens et al. 2004). he experiments were done in a chamber with lowing oxygen, which exclude any possibility of penetration of metallic particles during the experiment. he presence of a magnetically ordered phase was revealed in pressure-polymerized C60 (Makarova et al. 2001a,b). Later, several authors retracted from this paper on the grounds that the impurity content measured on the surface of the samples by particle-induced x-ray scattering (PIXE) was higher than that obtained by the bulk impurity analysis and that the Curie temperature was close to that of Fe3C (Makarova and Palacio 2006). Some authors did not agree with the retraction. One of the reasons of disagreement was that the concentration of impurities within the information depth of the PIXE method (36 μm) measured on the same samples was still three times less than necessary for the observed magnetic signal (Han et al. 2003, Spemann et al. 2003). he whole set of experiments was repeated with the same team of technologists and on the same equipment (Makarova and Zakharova 2008), and for several samples the magnetization values were higher than those expected from the metallic contamination. Having followed in situ the depolymerization process through the temperature dependence of the ESR signal (Zorko et al. 2005), the authors conclude that the magnetic signal is directly connected with the polymerized fullerene phase and cannot be attributed to iron compounds. Systematic study of synthesis conditions for the production of the ferromagnetic fullerene phase was made by another team. Only samples prepared in a narrow temperature range show a ferromagnetic signal with a qualitatively similar magnetic behavior (Narozhnyi et al. 2003). A diferent method was used for the preparation of the ferromagnetic polymers of C60: multi-anvil octupole press (Wood et al. 2002). Inelastic neutron scattering analysis of the ferromagnetic phase in the polymerized fullerene sample showed a suicient presence of hydrogen (Chan et al. 2004).

25.8.7 Irradiated Carbon Structures Studies of irradiated carbon structures provided convincing proof for the intrinsic origin of the efect. his is the case of the proton-irradiated HOPG where the ultimate purity of the

material is proved by simultaneous measurements of the magnetic impurities (Esquinazi et al. 2003).Elementally sensitive experiments on proton bombarded graphite provided fast evidence for metal-free carbon magnetism (Ohldag et al. 2007). he temperature behavior suggests two-dimensional magnetic order (Barzola-Quiquia et al. 2007). Ferromagnetism was found in irradiated fullerenes with 250 keV Ar and 92 MeV Si ions (Kumar et al. 2006), with 10 MeV oxygen ion beam (Kumar et al. 2007), 2 MeV protons (Mathew et al. 2007). Paradoxically, if one bombards graphite with iron and hydrogen, both produce similar paramagnetic contributions. However, only protons induce ferromagnetism (Barzola-Quiquia et al. 2008; Hohne et al. 2008). he mechanism of ferromagnetism in H+-irradiated graphite is largely unknown and may result from the appearance of bound states due to disorder and the enhancement of the density of states (Araujo and Peres 2006), and can be induced by single carbon vacancies in a three-dimensional graphitic network (Faccio et al. 2008); magnetism decreases for both diamond and graphite with increase in vacancy density (Zhang et al. 2007). he role of hydrogen is not well understood as magnetism should survive only at low H concentrations (Boukhvalov et al. 2008). he mechanism of ferromagnetism in disordered graphite samples is considered to arise from unpaired spins at defects, induced by a change in the coordination of the carbon atoms (Guinea et al. 2006). Several works discuss theoretical models that address the efects of electron–electron interactions and disorder in graphene planes (González et al. 2001, Stauber et al. 2005).

25.8.8 Magnetic Nature of Intrinsic Carbon Defects here are strong reasons why high-temperature ferromagnetism in carbon is hard to expect. A major requisite for magnetism in an all-carbon structure is the presence and stability of carbon radicals. he occurrence of radicals, which can introduce an unpaired spin, is cut down by the strong ability of pairing all valence electrons in covalent bonds. hese reasons may explain the diiculties and poor reproducibility in preparation of magnetic carbon compounds. All known carbon allotropes are diamagnets. Diamagnetic susceptibility of bulk crystalline graphite is very large, and it yields only to superconductors in this respect. he situation changes for graphite containing certain type of defects and for nano-sized graphene layers. According to theoretical suggestions, the presence of edges in nanographene produces edge-inherited nonbonding π-electronic state (edge state) in addition to the π- and π*-bands, giving entirely diferent electronic structure from bulk graphite. hese so-called “peculiar” states are extended along the edges but at the same time are localized at the edges (Fujita et al. 1996). Nanographite is characterized by the dependence of electronic structure on edge termination: edge states are present on variously terminated zigzag edges but are absent at the armchair edges. hese states produce large electronic density of states at the Fermi level and play an important role in the unconventional nano-magnetism.

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Handbook of Nanophysics: Principles and Methods

It is suggested that the basic magnetic mechanism is spin polarization in these highly degenerate orbitals or in a lat band (Kusakabe 2006). Diamagnetism of nanographenes can be understood in terms of diamagnetic ring currents. Defects in graphite always reduce the diamagnetic signal. In a simpliied picture, vacancies, adatoms, pores, and bond rotations enhance local paramagnetic ring currents and produce local magnetic moments (LopezUrias et al., 2000). heory allows also magnetism in diamond structures (Cho and Choi 2008).

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Carbon adatoms (Figure 25.10a) possess a magnetic moment of about 0.5 μB whereas carbon vacancies in graphitic network generate a magnetic moment of about 1 μB (Ma et al. 2004).

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Several scenarios that account for (or predict) the magnetism of carbon have been suggested: bulk magnetism, induced magnetism, and atomic-scale magnetism caused by structural imperfection. Figure 25.10 illustrates the intrinsic carbon defects that may lead to the magnetic ordering in carbon structures.

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FIGURE 25.10 Intrinsic carbon defects which are thought to lead to magnetic ordering in carbon structures. (a) Adatom. (b) Vacancy. (c) Hydrogen. (d) Stone-Wales defect. (e) Positive curvature. (f) Negative curvature. (g) Porosity. (h) Zigzag edge.

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Nanomagnetism in Otherwise Nonmagnetic Materials

Vacancies in graphite, both ordinary (Figure 25.10b), and hydrogenated (Figure 25.10c), create new states below the Fermi level. he extra π-electrons are induced to the system when vacancies are introduced. For noninteracting vacancies, these extra electrons give rise to an unpaired spin associated with the vacancy (Lehtinen et al. 2003).

negative Gaussian curvature, unpaired spins can be introduced by sterically protected carbon radicals. Not only negative Gaussian curvature may lead to magnetism; the same is true for the positive: carbon compounds that display an odd number of pentagons and heptagons present polarization in the ground state (Azevedo et al. 2008).

25.8.8.2 First-Raw Elements

25.8.8.4 Zigzag Edges

A speciic case of defects is the presence of the irst-raw elements, although they cannot be unambiguously classiied as intrinsic carbon defects. he most important defect is hydrogen: Unsaturated valence bonds at the boundaries of graphene lakes are i lled with stabilizing elements; among these stabilizers hydrogen atoms are the common ones. he entrapment of hydrogen by dangling bonds at the nanographite perimeter can induce a inite magnetization. A theoretical study of a graphene ribbon in which each carbon atom is bonded to two hydrogen atoms at one edge and to a single hydrogen atom at the other edge shows that the structure has a inite total magnetic moment (Kusakabe and Maruyama 2003). Combination of diferent edge structures (by means of hydrogenation, luorination, or oxidation) is proposed as a guiding principle to design magnetic nanographite (Maruyama and Kusakabe 2004). Hydrogenation of carbon materials can induce magnetism through termination of nanographite ribbons, adsorption on the CNT external surface (Pei et al. 2006), trapping at a carbon vacancy or pinning by a carbon adatom (Ma et al. 2005). Other elements that may strongly inluence magnetic behavior of carbon are boron and nitrogen. Border states in hexagonally bonded BNC heterosheets have been predicted to lead to a ferromagnetic ground state, a manifestation of lat band ferromagnetism (Okada and Oshiyama 2001). In heterostructured nanotubes, partly illed states at the interface of carbon and boron nitride segments may acquire a permanent magnetic moment. Depending on the atomic arrangement, heterostructured C/BN nanotubes may exhibit an itinerant ferromagnetic behavior owing to the presence of localized states at the zigzag boundary of carbon and boron nitride segments (Choi et al. 2003).

Electronic states are strongly inluenced by the existence and the shape of graphite edge, and zigzag edges favor the spin polarization with ferromagnetic alignment. Nanographite, a stack of nanosized graphene layers, is a nanosized π-electron system with open edges. he periphery of a nanographite pattern can be described as a combination of zigzag and armchair edges (Figure 25.10h). In the open-edge systems, the edges around their boundary produce distinctive electronic features, namely, the zigzag edges produce strongly spin-polarized states, which are spatially localized around the edges. he presence of these states modiies the electronic structure of nanographite as a whole: It produces edge-inherited nonbonding π-electronic state (edge state) in addition to the π- and π*-bands, giving entirely diferent electronic structure from bulk graphite. hese so-called “peculiar” states are extended along the edges but at the same time are localized at the edges. hese states produce large electronic density of states at the Fermi level and play an important role in the unconventional nanomagnetism (Enoki et al. 2007). Interestingly, similar predictions have been made for ZnO nanoribbons with zigzag-terminated edges. A net magnetic moment was found for single- and triple-layered zigzag nanoribbons, however, for two, four, and ive layers it vanishes even when in the latter case there are states in the Fermi level (BotelloMendez et al. 2008).

25.8.8.3 Curvature Stone–Wales defects (Figure 25.10e) are responsible for Gaussian curvature in carbon structures. Gaussian negative curvature provides a mechanism for steric protection of the unpaired spin (Park and Min 2003, Park et al. 2003). A particular case of a graphene modiication is the Stone–Wales defects, or topological defects, caused by the rotation of carbon atoms, which leads to the formation of ive- or sevenfold rings. A novel class of curved carbon structures, Schwarzites and Haeckelites, has been proposed theoretically (Mackay and Terrones 1991). Schwarzite is a form of carbon containing graphite-like sheets with hyperbolic curvature. So far, periodic Schwarzites have not been realized experimentally; however, there is experimental evidence that random Schwarzite structures are present in a cluster form in such carbon phases as spongy carbon (Barborini et al. 2002) and carbon nanofoam (Rode et al. 2004). In the systems with

25.8.8.5 Defects in Fullerenes Ferromagnetism in fullerenes is also thought to be of defect nature. It was shown both theoretically (Okada and Oshiyama 2003) and experimentally (Boukhvalov et al. 2004) that the ideal polymerized fullerene matrix is not magnetic. he following type of defects have been considered: broken or shortened interfullerene bonds, distortion of fullerene cages, vacancies in the fullerene cages, adatoms on fullerene cages, local charge inhomogeneities, and open-cage defect structure with hydrogen atom bonded chemically to one of defect carbon atoms. Partial disruption of interfullerene bonds: linking of molecules through a single bond is preferred for multiplet states of system (Chan et al. 2004). Cage distortion of C 60 in polymerized twodimensional network leads to competition between diamagnetic and ferromagnetic states (Nakano et al. 2004). Certain types of vacancies in coexistence with the 2 + 2 cycloaddition bonds represent a generalized McConnell’s model for high-spin ground states in the systems with mixed donor–acceptor stacks (Andriotis et al. 2005). Donor–acceptor mechanism was considered for the case of microscopic electric charge inhomogeneities introduced in a polymeric network. Two charged adjacent fullerenes interact ferromagnetically, and the ground state of

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a charged dimer is triplet (Kvyatkovskii et al. 2004). he C60 doublet radicals appear ater the application of pressure, and this state has a long life state (Ribas-Arino and Novoa 2004a). he evaluation of capability of the C60 molecule to act as a magnetic coupling unit was made: C 60 diradical is an excellent magnetic coupler (Ribas-Arino and Novoa 2004b). Some metastable isomer states with zigzag-type arrangement of the edge atoms of C60 may form during the cage opening process (Kim et al. 2003). Long-range spin coupling, which is an essential condition for the ferromagnetism, has been considered through the investigation of an ini nite, periodic system of polymerized C60 network. Chemically bonded hydrogen plays a vital role, providing a necessary pathway for the ferromagnetic coupling of the considered defect structure. It is well known that C 60 molecules become magnetically active due to the spin (and charge) transfer from dopants. Magnetic transitions were reported for the TDAE-C 60 ferromagnet, the (NH3)K 3C60 antiferromagnet, AC60 and Na 2AC 60 polymers (A = K, Rb, Cs). Kvyatkovskii et al. (2005, 2006) consider the situation when C60 molecule is doped through the presence of structural defects and impurities which create stable molecular ions C 60± and analyze the interaction of two adjacent molecules (i.e., dimer) embedded in a two-dimensional polymeric network. he main result is that the ferromagnetic interaction is possible only in the crystals where fullerenes have speciic orientation. h is type of orientation is provided by (2 + 2) cycloaddition reaction, which forms a double bond (DB) between the buckyballs.

25.8.9 Magnetism of Graphene A quickly developing topic is magnetism of graphene. he irst experimental isolation of a single nanographene was obtained by electrophoretic deposition and heat treatment of diamond nanoparticles (Afoune et al. 2001). Experimentally, the observation of room-temperature graphene magnetism was claimed on the graphene material prepared from graphite oxide (Wang et al. 2009). It has been shown theoretically (Vozmediano et al. 2006) that the interplay of disorder and interactions in a 2D graphene layer gives rise to a rich phase diagram where strong coupling phases can become stable. Local defects can lead to the magnetic ordering. he theories predict itinerant magnetism in graphene due to the defect-induced extended states (Yazyev and Helm 2007) while only single-atom defects can induce FM in graphene-based materials (Yazyev 2008) or short-range magnetic order peculiar to the honeycomb lattice with the vacancies (Kumazaki and Hirashima 2007a) or with hydrogen termination or a chemisorption defect (Kumazaki and Hirashima 2007b). he graphene magnetic susceptibility is temperature dependent, unlike an ordinary metal (Kumazaki and Hirashima 2007c). Spin susceptibility, which decreases with temperature without impurities, takes a i nite value with impurities which may enhance the tendency to a ferromagnetic ordered state (Peres et al. 2006).

Handbook of Nanophysics: Principles and Methods

Finite graphene fragments of certain shapes, e, g, triangular or and hexagonal “nanoislands” terminated by zigzag edges (Fernandez-Rossier and Palacios 2007), or variable-shaped graphene nanolakes (Wang et al. 2008a,b), as well as some “Star of David”-like fractal structures (Yazyev 2008) possess a highspin ground state and behave as artiicial ferrimagnetic atoms. Ferrimagnetic order emerges in rhombohedral voids with imbalance charge in graphene ribbons, and the defective graphene ribbons behave as diluted magnetic semiconductors (Palacios and Fernández-Rossier 2008). A defective graphene phase is foreseen to behave as a room temperature ferromagnetic semiconductor (Pisani et al. 2008). Both magnetic and ferroelectric orders are predicted (Fernandez-Rossier 2008). Edge state magnetism has been studied on realistic edges of graphene and is shown that only elimination of zigzag parts with n > 3 will suppress local edge magnetism of graphene (Kumazaki and Hirashima 2008). he edge irregularities and defects of the bounding edges of graphene nanostructures do not destroy the edge state magnetism (Bhowmick and Shenoy 2008). However, such edge defects (vacancies) and impurities (substitutional dopants) suppress spin polarization on graphene nanoribbons, which is caused by the reduction and removal of edge states at the Fermi energy (Huang et al. 2008). Magnetic order in zigzag bilayers ribbons is also related to the properties of zigzag edges (Sahu et al. 2008). Neutral graphene bilayers are proposed to be pseudospin magnets (Min et al. 2008). In a biased bilayer graphite (Stauber et al. 2008) a tendency toward a ferromagnetic ground state is investigated and shown that the phase transition between paramagnetic and ferromagnetic phases is of the i rst order. Spin is coni ned in the superlattices of graphene ribbons, and in speciic geometries magnetic ground state changes from antiferromagnetic to ferrimagnetic (Topsakal et al. 2008). An alternative approach is connected with pentagons, dislocations, and other topological defects (Carpio et al. 2008). Single pentagons and glide dislocations made of a pentagon–heptagon pair alter the magnetic behavior, whereas the Stone–Wales defects are harmless in the lat lattice. he combination of hydrogen-induced magnetism and changeable thermodynamics upon variation of the graphene layer spacing makes graphene a reversible magnetic system (Lei et al. 2008). In graphene magnetism survives at low H concentrations (Boukhvalov et al. 2008). A number of nanoscale spintronics devices utilizing the phenomenon of spin polarization localized at one-dimensional (1D) zigzag edges of graphene have been proposed (Yazyev and Katsnelson 2008). Some of the theories created for graphene explain the experimental observations in protonbombarded graphite (Yazyev et al. 2008). Carbon materials that exhibit ferromagnetic behavior have been predicted theoretically and reported experimentally in recent years (Makarova and Palacio 2006). he initial surprising experiments were conirmed by the independent groups. he fact that carbon atoms can be magnetically ordered at room temperature was conirmed by the direct experiment: an elementsensitive method x-ray magnetic circular dichroism.

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Nanomagnetism in Otherwise Nonmagnetic Materials

25.9 Possible Traps in Search of Magnetic Order his section critically reviews the data in the literature that report experimental observations of magnetism without transition metal cations. While only a few of the experiments that have reported the “nonmagnetic magnetism” are free from obvious or possible artifacts, those few along with the theoretical predictions or computer simulations suggest it is real. he experimental situation in this ield is unclear with many conlicting results. he source of RTFM is oten controversial and contentious particularly because of the possible role of undetected ferromagnetic impurities such as Fe, Co, Ni, etc. (Janisch et al. 2005). Some of the experimental results were plagued by the precipitates of doped magnetic elements and even unintentional contaminations during sample handling. he sources of unintentional sample contamination are numerous. Even pure single crystalline sapphire substrates show a ferromagnetic behavior that partially changes ater surface cleaning. he amount of magnetic impurities in the substrates was determined by particleinduced x-ray emission, and for 10 commercial substrates the iron concentration ranged from 1 to 260 ng/cm2 (Salzer et al. 2007). his amount of impurities is enough to overshadow the intrinsic signal from thin i lms grown on oxide substrates. Impurities can be introduced during various technological processes, for example by the procedure used to i x the substrates to the oven (Golmar et al. 2008). Nanoparticles of various sizes and shapes were observed as a result of hydrothermal treatment of cyanometalate polymers and the authors emphasize the extreme care that must be taken in the studies of magnetism of apparently analytically pure materials (Lefebvre et al. 2008). Silicon—the main element of the modern electronics—has been declared as a magnetic element (Kopnov et al. 2007). RTFM observed in Co-doped ZnO grown on Si (100) has been characterized as coming from Si/SiOx interface (Yin et al. 2008). It was shown that iron from the Pyrex glassware appears on silicon substrate ater etching in hot KOH in the form of well-separated ferromagnetic nanoparticles (Figure 25.11) (Grace et al. 2009). A detailed investigation by magnetic measurements and EPR spectroscopy of the magnetic fraction of cigarettes and its variation with the smoking process shows that complex magnetic

Element

Weight (%)

C

4.70

O

2.37

Si

80.62

Fe

12.31

100 nm

FIGURE 25.11 Scanning electron microscope image of an etched silicon surface, with a magniied image of a magnetic particle and elemental analysis of the particle and the surrounding area showing that the particles are iron-rich. (Adapted from Grace, P.J. et al., Adv. Mater., 21, 71, 2009. With permission.)

properties of both ashes and tobacco, which should be considered as a possible source of data contamination to be avoided in magnetism laboratories (Cador et al. 2008). An important source of mistakes in the interpretation of the experimental data is underestimation of the role of iron in the measured magnetic signal. Usually the authors use the following logic: “Let us start with a rather unrealistic assumption that all iron impurities form metallic clusters and all clusters are large enough to behave ferro- or ferrimagnetically, then the maximum magnetization produced by 1 ppm of impurities is calculated using the parameters listed in Table 25.1.” Indeed, in order to contribute to the total magnetization of the samples, the impurities must interact magnetically. Simple addition of transition metals does not lead to ferromagnetic properties, as no interaction pathway is provided. Table 25.1 can be used for estimating the maximum values of the parasitic signals. However, this method must be used with caution. First, the assumption that all atoms of transition metals form clusters large enough to behave ferro- or ferrimagnetically is not an unrealistic assumption. If the sample was prepared at high temperatures, metallic atoms could aggregate during the cooling process with the formation of clusters (Lefebvre et al. 2008). To behave ferromagnetically, the clusters must be suiciently

TABLE 25.1 Magnetization Values Produced by One Weight ppm of Transition Metal Impurity Provided the Impurities Interact Magnetically Type of Impurity Iron, α-Fe Magnetite, Fe3O4 Maghemite, Fe2O3 Hematite, Fe2O3 Iron carbide, Fe3C Nickel, Ni Cobalt, Co

Maximum Magnetization, emu/g 0.00022 0.000092 0.00008 0.0000004 0.00013 0.000055 0.000161

Curie Temperature (K)

Type of Ordering

1045 860 880 950 483 630 1130

Ferromagnetic Ferrimagnetic Ferrimagnetic Canted antiferromagnetic Ferromagnetic Ferromagnetic Ferromagnetic

Note that the laboratories carrying out elemental analysis issue the results not in the elemental ppm, but in the weight ppm units, i.e., 1 ppm = 1 mg/kg = 1/1,000,000 part by weight.

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Handbook of Nanophysics: Principles and Methods

large. Below a certain size, the particles consist of single magnetic domains. For iron this limit is of the order of 150 Å, i.e., about 105 atoms per Fe cluster (Kittel 1946). Normally for these particles the superparamagnetic behavior is expected. However, describing the magnetic behavior of the small clusters, one must take into account the efects of the local environment on the electronic structure and magnetic moments, which can be different for various structural forms (Liu et al. 1989). Second, the sample may provide special conditions for the metallic atoms to aggregate. One example is iron in nanographite matrix. Figure 25.12 illustrates an accidental matching of the Fe–Fe distance 2.866 Å with that of the C1–C4 distance ∼2.842 Å of the hexagonal rings in graphite (Kosugi et al. 2004). he x-ray dif raction pattern indicates that the particles are composed of a-Fe and graphitic carbon. Due to the matching of two distances, the growth of graphitic planes from iron ionic salts has been observed (Kosugi et al. 2004), and one could imagine that an opposite efect might happen: the decoration of the armchair edges of nanographites with metallic iron. he latter example is only a suspicion of the author of this paper and does not have any experimental conirmation; on the contrary, proximity of carbon generally leads the reduced magnetization of iron (Saito et al. 1997, Host et al. 1998, Fauth et al. 2004). hird, in bulk Fe, magnetism and structure are strongly dependent. he magnetic moments of free Fe monolayers are theoretically found to be larger than those of the surface with values equal to 3.2 μB for Fe(001) (Freeman and Wu 1991). Magnetic moments μ(N) of iron clusters μ (25 ≤ N ≤ 130) is 3 μB per atom, decreasing to the bulk value (2.2 μB per atom) near N = 500. For all sizes, μ decreases with increasing temperature, and is approximately constant above a temperature TC(N). For example, TC(130) is about 700 K, and TC(550) is about 550 K (TC bulk = 1043 K) (Billas et al. 1993). h is means that neither the absence of large clusters nor an unusual Curie temperature can be taken as an evidence of iron-independent magnetism. he enhancement of magnetism at the surface can be qualitatively understood on the basis of a simple picture for the evolution of magnetism from the atom to the bulk. Iron atom has the electronic coniguration [Ar]3d64s2. he total spin must be maximized according to the Hund’s rule. From Figure 25.12, one may think that iron has magnetic moment about 4 μB per atom, C

C C

C

C C

C C

C

C

C

C

C

C C

C

C

Fe

Fe

Fe

Fe

Fe

Fe

C C

C

C

C C

C

C

C

C

C

Fe

Fe

Fe

Fe

Fe

Fe

C

C

C

C Fe

Fe

FIGURE 25.12 Accidental coincidence of carbon and iron lattice constants.

but this is wrong. Magnetism is a collective phenomenon, and single atoms do not produce magnetism. When two Fe atoms are brought together, the s-electron will jump to the d-level because the spd hybridization leads to the powering of the total energy. Surface is a low-coordinated system. For the iron atom on the surface one s-electron is transferred to the d-levels whereas the d-levels corresponding to the surface are strongly localized on the atomic sites. According to the Hund’s rule the spin-up d-band (i.e., the majority band) will be completely i lled with ive electrons and therefore the spin-down d-band (i.e., the minority band) will contain two electrons. he spin imbalance between the majority and minority spins equals to three n(↑) - n(↓) = 3 for the surface Fe atoms. As the system grows in size, the coordination number z increases, and hybridization is changed to dd- and sd-hybridization. he spin imbalance of bulk Fe inally reduces to n(↑)-n(↓) = 2.2 for bulk Fe (Fritsche et al. 1987). In many experiments, the presence of iron in the samples does not lead to ferromagnetic behavior of iron. It is a matter of common knowledge that carbon quenches ferromagnetism of iron in the case of stainless steel. If the iron concentration is small, the absence of superparamagnetic behavior, which is typical for FexC1-x iron–carbon nanocomposites (Babonneau et al. 2000, Enz et al. 2006, Schwickardi et al. 2006) suggests that impurities either do not contribute to magnetic properties, or their role is far from trivial. Nontrivial origin of magnetic behavior in contaminated carbon-based materials may result from catalytic or template properties of transition metal atoms. Small iron clusters are driven into a nonmagnetic state by the interaction to graphitic surfaces (Fauth et al. 2004). Proximity of carbon generally leads the reduced magnetization of the transition metal clusters (Saito et al. 1997, Host et al. 1998). he reduced magnetism in case of very small clusters is explained by the fact that the transition metal 4s-related density of states is strongly shited upward in energy due to the repulsive interaction with the carbon π orbitals (Duf y and Blackman 1998). Fe impurities weaken the ferromagnetic behavior in Au by delocating the charge from the surface of the NPs (Crespo et al. 2006). Such magnetic element as cobalt suppresses ferromagnetism in intrinsically magnetic ZnO ilms (Ghoshal and Kumar 2008). A paper analyzing several uses of spurious efects (Garcia et al. 2009) must become “he Deskbook on Professional Responsibility” for everybody working with small magnetic signals. In addition to the above, the paper analyses the errors coming from such units of SQUID equipment as polyimide Kapton® tape, gelatin capsules, cotton, plastically deformed straws, anisotropy artifacts coming from irregular distributed impurities.

25.10 Nontrivial Role of Transition Metals: Charge Transfer Ferromagnetism One of the mechanisms of nontrivial role of magnetic metals in d-zero ferromagnetism is contact-induced magnetism, which arises when nonmagnetic materials brought in the proximity

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Nanomagnetism in Otherwise Nonmagnetic Materials

with magnetic ones. Close proximity of iron and carbon can result in magnetic moments (∼0.05 μB/C; 1 μB/C ≡ 465 A m2 kg−1) for atoms near the surfaces of multiwalled carbon nanotubes (Céspedes et al. 2004) or thin i lms in C/Fe multilayer stacks (Mertins et al. 2004). here are theoretical models that explain the role or iron as just the role of a defect, and magnetic nature of the dopant does not play a role (Weyer et al. 2007). In case of ferromagnetism of undoped CaB6 iron serves as one of the defects, which lead to a partially occupied impurity band that is responsible for RTFM (Edwards and Katsnelson 2006). A nontrivial role of transition metal impurities in oxide ferromagnetism is proposed in Osorio-Guillen et al. (2008). he impurities introduce excess electrons in oxides and either (1) introduce resonant states inside the host conduction band and produce free electrons or (2) introduce a deep gap state that carries a magnetic moment. he second scenario leads to a ferromagnetic behavior. he following arguments have been put forward by Coey et al. (2008) that magnetism in the dilute magnetic oxide ilms is not related to the transition metal cations: he oxides are not good crystalline materials, on the contrary, magnetism is governed by the defect structure; high Curie temperatures are incompatible with low concentration of magnetic dopants, and the dopants itself are paramagnetic whereas the whole sample is ferromagnetic. Also, the magnetic semiconductor efects such as Hall, Faraday, and Kerr efects are not observed. hus, magnetism in these systems is not due to the ferromagnetically ordered moments of the doping cations mediated by the carriers. he role of transition metal ions is to provide a charge reservoir, and this ability is due to the fact that the cations can exist in two different charge states. “It is therefore the ability of the 3d cations to exhibit mixed valence, rather than their possession of a localized moment, which is the key to the magnetism” (Coey et al. 2008). he proposed model of a formation of a defect-based narrow band and tuning the position of the Fermi level by transferred charges was named charge-transfer ferromagnetism.

25.11 Interface Magnetism here is growing experimental evidence that a new type of magnetism has been identiied, namely, a magnetism related to surfaces and interfaces of nonmagnetic materials, the “interface magnetism” (Brinkman et al. 2007, Eckstein 2007). Similar efects have been described for diferent objects: organic molecules adsorbed on metals (Carmeli et al. 2003) HfO2-coated silicon or sapphire (Venkatesan et al. 2004) silicon/silicon oxide interfaces (Kopnov et al. 2007) or PbS self-assembled nanoparticles on GaAs (Zakrassov et al. 2008). As has been already mentioned, such elements as Au, Ru, Rh, Pd, which do not show bulk magnetization, becomes magnetic at the nanoscale. Semiconductor nanoparticles show increasing magnetization for decreasing diameter (Neeleshwar et al. 2005), strong size dependence was found for Ge quantum dots (Liou and Shen 2008). Ferromagnetism of a diferent nature is

H * (spin orbit coupling)

H*

H*

sz

K (structural anisotropy)

SZ

lz

Applied H (Zeeman effect)

H

FIGURE 25.13 Scheme of the diferent magnetic moments and the interaction controlling their orientation. he relative orientation of SZ , sz , and l z is i xed by H *. he structural anisotropy acts only on SZ , while the reversal magnetic applied ield acts on all of them. (Reprinted from Hernando, A. et al., Phys. Rev. B, 74, 052403, 2006b. With permission.)

observed in thin i lms and nanoparticles capped with organic molecules (Crespo et al. 2004, Yamamoto et al. 2004). he interface magnetism is characterized by • being temperature-independent in the range of 0–400 K • having high anisotropy • having very large magnetic signal per atom on the surface It is believed that the combination of these features speaks in favor of collective orbital magnetism initiated by the charge transfer between the substrate and the thin layer. Accumulating data clearly indicate that a new type of magnetism exists, related to a cooperative efects on the surface or interfaces (Cahen et al. 2005). At present, the precise mechanism of this phenomenon is not known and theory is not yet constructed. From the analysis of the anisotropy of thiol capped gold ilms, a conclusion is made that the orbital momentum induced at the surface conduction electrons is crucial to understand the observed giant anisotropy (Hernando et al. 2006a,b). he orbital motion is driven by spin–orbit interaction, which reaches extremely high values at the surfaces (Figure 25.13). he induced orbital moment gives rise to an efective ield of the order of 1000 T, which is responsible for the giant anisotropy.

25.12 Conclusions his chapter reviews the current status of research on nanomagnetism along with history of research developments in this ield. An attempt has been made to bring together the results obtained

25-22

in diferent areas: from metals and semiconductors to dielectric oxides, from quantum dots to graphite and graphene. Particular attention is paid to the pitfalls awaiting the researcher at every turn. herefore, we expect that the chapter will be useful to all scientists facing with the problem “To believe or not to believe.” Science is not religion and it doesn’t just come down to faith; science is based upon veriiable evidence. Science is all about testing ideas via experiment: the models that match the current experimental evidence can be disproved by new experiments. Science is not about “always being right,” and any scientist meets with wrong turns in trying to understand a complicated phenomenon. A bright example is the beginning of the twentieth century, which created “the gallery of failed atomic models,” from homson “plum pudding” model of the atom, through the dipole model of Lenard, the Saturnian model of Nagaoka, electron luid model by Lord Rayleigh, expanding electron model by Schott, the archion model by Stark, until the Bohr orbital model appeared, which “won” being the only model capable of explaining the Rydberg formula. Somewhat similarly, magnetism of nonmagnetic materials seems to be constructing “a gallery of failed magnetic models” from ferromagnetic ground state of a dilute electron gas to a trivial parasitic ferromagnetism. here is a divergence of opinion on the role of vacancies, defects, and the carrier mediation, and novel ideas of charge-transfer ferromagnetism and that of interface magnetism are being developed. Due to the present status of researches in this ield, the author does not take liberty to give preference to any of the theories. What is unambiguously clear now is that nanoscale magnetism of otherwise nonmagnetic materials is sui generic, i.e., “outside the family.” Due to the lack of a theoretical understanding and due to the diiculty in reproducibility, the origin of the defect-induced ferromagnetism is under intense debate, but its existence is beyond doubt. It is not easy to predict what will happen when a magnetic atom is introduced into or onto the surface of a non-magnetic host crystal because the atom “sees” the surface crystal lattice through orbital overlap of the electrons (Schneider 2008). Even more diicult is to predict the magnetic behavior of the materials that are nonmagnetic in the bulk but become magnetic at the nanoscale. Recent magnetic experiments on nanostructures are showing us new approaches that open a new world of possibilities for creating the materials for next generation spintronic devices.

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Handbook of Nanophysics: Principles and Methods

Andersson, O. E., Prasad, B. L. V., and Sato, H. 1998. Structure and electronic properties of graphite nanoparticles. Phys. Rev. B 58: 16387–16393. Ando, K., Saito, H., Jin, Z. W. et al. 2001. Magneto-optical properties of ZnO-based diluted magnetic semiconductors. J. Appl. Phys. 89: 7284–7286. Andriotis, A. N., Menon, M. R., and Sheetz, M. 2005. Are s–p- and d-ferromagnetisms of the same origin? J. Phys.: Condens. Matter 17: L35–L38. Antonov, V. E., Bashkin, I. O., Khasanov, S. S. et al. 2002. Magnetic ordering in hydrofullerite C60H24. J. Alloys Compd. 330: 365–368. Araujo, M. A. N. and Peres, N. M. R. 2006. Weak ferromagnetism and spiral spin structures in honeycomb Hubbard planes. J. Phys.: Condens. Matter 18: 1769–1779. Arcon, D., Jaglicic, Z., Zorko, A. et al. 2006. Origin of magnetic moments in carbon nanofoam. Phys. Rev. B 74: 014438. Ata, M., Machida, M., Watanabe, H., and Seto, J. 1994. Polymer—C60 composite with ferromagnetism. Jpn. J. Appl. Phys. 33: 1865–1871. Azevedo, S., de Paivaa, R., and Kaschny, J. R. 2008. Spin polarization in carbon nanostructures with disclinations. Phys. Lett. A 372: 2315–2318. Babonneau, D., Briatico, J., Petrof, F. et al. 2000. Structural and magnetic properties of FexC1-x nanocomposite thin ilms. J. Appl. Phys. 87: 3432–3443. Balents, L. and Varma, C. M. 2000. Ferromagnetism in doped excitonic insulators. Phys. Rev. Lett. 84: 1264–1267. Banerjee, S., Mandal, M., Gayathri, N., and Sardar, M. 2007. Enhancement of ferromagnetism upon thermal annealing in pure ZnO. Appl. Phys. Lett. 91: 182501. Barborini, E., Piseri, P., Milani, P. et al. 2002. Negatively curved spongy carbon. Appl. Phys. Lett. 81: 3359–3361. Barzola-Quiquia, J., Esquinazi, P., Rothermel, M, Spemann, D., Butz, T., and Garcia, N. 2007. Experimental evidence for two-dimensional magnetic order in proton bombarded graphite. Phys. Rev. B 76: 161403. Barzola-Quiquia, J., Hohne, R., Rothermel, M., Setzer, A., Esquinazi, P., and Heera, V. 2008. A comparison of the magnetic properties of proton- and iron-implanted graphite. Eur. Phys. J. B 61: 127–130. Barzykin, V. and Gorkov, L. P. 2000. Ferromagnetism and superstructure in Ca1-xLaxB6. Phys. Rev. Lett. 84: 2207–2210. Beltran, J. I., Munoz, M. C., and Hafner, J. 2008. Structural, electronic and magnetic properties of the surfaces of tetragonal and cubic HfO2. New J. Phys. 10: 063031. Bennett, M. C., van Lierop, J., Berkeley, E. M. et al. 2004. Weak ferromagnetism in CaB6. Phys. Rev. B 69: 132407–132410. Berardan, D., Guilmeau, E., and Pelloquin, D. 2008. Intrinsic magnetic properties of In2O3 and transition metal-dopedIn2O3. J. Magn. Magn. Mater. 320: 983–989. Bhosle, V. and Narayan, J. 2008. Observation of room temperature ferromagnetism in Ga:ZnO: A transition metal free transparent ferromagnetic conductor. Appl. Phys. Lett. 93: 021912.

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26 Laterally Conined Magnetic Nanometric Structures Sergio Valeri University of Modena and Reggio Emilia and

26.1 Introduction ...........................................................................................................................26-1 26.2 Background.............................................................................................................................26-2 From Bulk to Surfaces and h in Films: he Vertical Coni nement • From h in Films to Wires and Dots: he Lateral Coni nement

CNR-Institute of Nanoscience-Center S3

26.3 State of the Art ...................................................................................................................... 26-4

Alessandro di Bona

26.4 Critical Discussion of Selected Applications ...................................................................26-15

CNR-Institute of Nanoscience-Center S3

Gian Carlo Gazzadi CNR-Institute of Nanoscience-Center S3

Fundamental Properties of Magnetic Bodies • Nanofabrication by Focused Ion Beam (FIB) Magnetocrystalline and Conigurational Anisotropies in Fe Nanostructures • Ion Irradiation • High-Density Magnetic Media Patterned by FIB • Sculpting by Broad Ion Beams • Beam-Induced Deposition

26.5 Outlook................................................................................................................................. 26-22 References........................................................................................................................................ 26-23

26.1 Introduction In modern society, applications of magnetic materials can be found almost everywhere and our daily life is intimately connected to magnetism and magnetic materials. he most noteworthy impact of magnetism occurs via information transport and data storage devices, which mostly consist of artiicially nanostructured magnetic materials. Here, artiicially structured materials refer to the materials which are made into either reduced dimensions such as two-dimensional (2D) ultrathin i lms, onedimensional (1D) wires, and zero-dimensional (0D) dots or assemblies of these low-dimensional structures such as multilayers, wire arrays, and dot arrays. Interesting phenomena come about by the imposed spatial coninement, which is comparable in size to some internal length scale of the material used, as spin dif usion length, carrier mean free path, magnetic domain extension, and domain wall width (Osborn 1945; Daughton 1999; Shi et al. 1999; Kirk et al. 2001; Shen and Kirschner 2002). Magnetic nanostructures by virtue of their extremely small size possess very diferent properties from their parent bulk materials. Nanostructured magnetic materials have been utilized in technologies with a large and growing economic impact. he magnetic recording industry is continuously pushing the technology as evidenced by the fact that the density of information storage has been steadily increasing at a compound annual rate exceeding 60% per year (McKendrick et al. 2000). his progress has been made possible by a series of scientiic and technological advances, mostly marked by the synthesis of artiicially structured

magnetic materials. With the ever-improved knowledge of lowdimensional magnetism, particularly the correlation between the magnetic properties, electronic properties, and structural properties, we are achieving an ability to design and to fabricate lowdimensional materials with desired magnetic properties. he ability to tailor magnetism is, therefore, strictly related to the ability to fabricate low-dimensional objects. It is highly desirable not only to fabricate ultraine nanostructures but also to fabricate arrays of such nanostructures. Ordered arrays of magnetic nanostructures (Figure 26.1) are particularly interesting to study, as one can probe both the individual and collective behavior of the elements in a well-dei ned and reproducible fashion (Cowburn and Welland 2000; Valeri et al. 2006). Ordered magnetic patterns are also technologically very important in a number of applications (as magnetic memory, recording media, magnetic switches, etc.) (Chou 1997; Nordquist et al. 1997; White et al. 1997). hese activities require a high degree of control on the quality of the magnetic material and on the geometry and morphology of the arrays. In particular, the control on the morphology of structures, like roughness and sharpness at the edges, is a fundamental issue when shape-related magnetic properties are investigated. A number of nanofabrication methods have been developed, including diferent lithographic, direct writing, and nanotemplating approaches (Martin et al. 2003). Methods based on either extended or focused ion beams (FIBs) have been proved to be efective for the preparation of extended arrays of magnetic, laterally confined nanometric structures as the physical-based approach is applicable to virtually any solid 26-1

26-2

Handbook of Nanophysics: Principles and Methods Vertical

100 × 100 nm Fe nanomagnets

Coil

Return pole GMR shield (upper)

In-plane (down-track)

GMR shield (lower) In-plane (cross-track)

(a)

(b)

FIGURE 26.1 Nanomagnets produced by focused ion beam (FIB) milling. On the let (a) are shown the noninteracting particles, while on the right (b) the particles are interacting along one direction.

material. FIB is a versatile nanofabrication tool based on the interaction of nanosize beams of energetic Ga ions with solids (Orlof et al. 2003; Giannuzzi and Stevie 2005). Etching occurs by physical ion sputtering (Townsend et al. 1976), optionally gasassisted to enhance material removal rates or species selectivity. With respect to state-of-the-art, competing lithographic technologies, FIB ofers a comparable resolution (few tens of nanometers) with higher lexibility. On the other hand, FIB milling is a slow process compared to standard lithographic nanofabrication and its low throughput is the main limiting factor. Improved fabrication capabilities in turn call for measurement techniques that can probe and help to understand the magnetic properties at the relevant length scales of nanostructures.

26.2 Background 26.2.1 From Bulk to Surfaces and Thin Films: The Vertical Coni nement he deep past in the ield of nanomagnetism is related to surface or thin-i lm magnetism, where the coninement was restricted just to the “vertical” dimension. h is aspect started out and developed analogously as its “parent” ield of surface science, both pushed by the emergence of new equipments and techniques (ultra-high-vacuum technology) that could ensure the cleanliness of surfaces and i lms. Critical aspects in fabrication were the accurate control of i lm thickness, the stoichiometry and defectivity of the i lms, the sharpness of the interfaces between i lm and substrate or between diferent i lms in multilayers. From the magnetic point of view, phenomena controlled by the i lm thickness (i.e., by the vertical coninement) were mainly investigated, namely, the ferromagnetic–superparamagnetic transition in ultrathin ferromagnetic i lms, the thickness-dependent Néel temperature in antiferromagnetic layers, and the coupling of ferro-, antiferro-, and nonmagnetic ilms in multilayers (Baibich et al. 1988; Alders et al. 1998; Lang et al. 2006). he breakthrough in the ield of surface and thin-ilm magnetism came with the advent of giant magnetoresistance (GMR), irst observed in 1988 in a metallic multilayer system consisting

Yoke

Main pole tip Recording layer Soft under layer

FIGURE 26.2 Schematic representation of a perpendicular head on a double layer perpendicular media and deinition of applied ield direction. (Reprinted from Hamaguchi, T. et al., IEEE Trans. Magnetics, 43, 704, 2007. With permission.)

of stacked thin i lms of magnetic and nonmagnetic materials (Baibich et al. 1988). GMR is a phenomenon in layered magnetic structures associated with enhanced sensitivity of the electrical resistivity to external magnetic ields: the electrical resistance reduces to minimum when the magnetization of the ferromagnetic layers are parallel, and increases to maximum when the magnetization of the two layers are antiparallel. his phenomenon was exploited for a new generation of high-performance read heads in commercial hard disk systems. he main driving force to develop nanomagnetism was the need for magnetic storage media with increasing density. Magnetic storage media consist of homogeneous, polycrystalline magnetic i lms where, provided the i lm thickness is small enough, a uniform magnetization state may occur over an extended region (magnetic domains) separated by interfaces where the magnetization can undergo a rapid variation from one orientation to the other (domain walls). he current method for writing/reading information is the control of magnetization in magnetic domains, each domain being an individual unit of information or bit (Figure 26.2) (Hamaguchi et al. 2007). Increasing the areal storage density calls not only for appropriate magnetic media that can accommodate a smaller bit size but also for the optimization of the complete disk-drive system. It includes smaller and more sensitive read/write heads, as well as progress in head/disk tribology (Brug et al. 1996; Fisher and Modlin 1996; Kryder et al. 1996).

26.2.2 From Thin Films to Wires and Dots: The Lateral Coni nement Lateral coninement represents the quest for lower dimensionality, from layers to stripes and dots, to approach 1D and “0D,” respectively. Stripes and dots can be fabricated by using the controlled manipulation or the (self) assembling of elementary bricks (single atoms or clusters), in the so-called bottom-up approach, and can

Laterally Coni ned Magnetic Nanometric Structures

be organized in lateral periodic arrays. For technologically oriented applications, nanostructures are mostly fabricated by using top-down approaches, which usually involve lithographic methods in order to downsize an extended ilm. Again, the driving force for this step is mainly the need to push further and further the density of magnetic storage media, moving from continuous, longitudinal media, where the bits are written onto magnetic ilms, to vertical and discrete media, where the bits are written onto patterned magnetic arrays, each element of the array representing a bit (Bader 2002). Longitudinal and vertical media refer to the orientation of the magnetization as either in the plane of the media or perpendicular to the plane of the media, respectively. In this ield, there exist expectations for successful future of magnetic systems in lateral coninement. Especially, periodic arrays of single-domain magnetic dots attract substantial interest because they allow a much larger areal storage densities than it would be possible on the basis of the current technologies used in conventional hard disks. he dots must be a single magnetic domain and they should have a perpendicular magnetic anisotropy. Furthermore, all the dots should be spatially separated such that any existing dipolar coupling between adjacent dots is too weak in order to l ip the magnetization (e.g., the stored information) of any of their neighbors (Carl and Wassermann 2002). he quest for fabrication of ordered arrays of magnetic nanostructures was satisied by the use of the technologies originally developed for semiconductor devices (Madou 1997). Most of the methods were directly adapted from microelectronic technologies. Diferent techniques currently used for the fabrication of magnetic patterns are discussed in recent review papers (Martin et al. 2003; Shen et al. 2003). Lithography technologies were, for instance, used for pattern transfer into magnetic ilms. In the most common optical or x-ray lithography (hompson et al. 1994; Sheats and Smith 1998), where ultraviolet (UV) light or x-ray are used, respectively, large areas can be easily patterned. he resolution limit is ultimately determined by the radiation wavelength. he e-beam lithography technique uses an electron beam to expose an electron-sensitive resist (Fischer and Chou 1993; New et al. 1994). One of the main advantages of this technique is its versatility. Direct writing technique by dissociation of a resist containing the desired magnetic atom is also used to pattern nanostructures (Streblechenko and Scheinfein 1998). In laser interference lithography, the interference of two coherent laser beams is the mechanism used to produce periodic structures in the resist i lm (Farhoud et al. 2000). Bottom-up methods appear to be potential successors/competitors to lithography. Tremendous efort has been made in the last decade toward the fabrication of nanoscale features using self-organized assembly of atoms and molecules into nanoscale dots and wires. he substrate can also be morphologically modiied such that when the magnetic material is deposited it creates the desired nanostructures, e.g., by strain engineering in epitaxial i lms (Leroy et al. 2005). hese techniques are limited by the advantages and/or disadvantages of the method utilized to modify the substrate. Moreover, the range of possible structures

26-3

is very limited and, although most of these processes are locally ordered, they usually do not have true long-range order. Deposition through nanomasks is another method recently exploited for fabrication of laterally coni ned magnetic nanostructures. Shadow masks with nanometric holes are placed very close to the substrate. Depositing magnetic materials through the holes creates the desired nanostructures on the substrate (Stamm et al. 1998; Marty et al. 1999). A sort of shadow mask can be also obtained by using a chemical solution containing nanometerscale polymer spheres to coat the substrate (spheres lithography) (Li et al. 2000). his technique is capable of obtaining large patterned areas in a quick, simple, and cost-efective way. New ways to create self-organized 0D and 1D nanostructures are suggested by the increasing knowledge of morphology evolution during bombardment of solid surfaces and i lms by extended ion beams (Valbusa et al. 2002; Moroni et al. 2003). During ion bombardment, atoms are removed from the surface (sputtering process): To this respect, sputtering is to a irst approximation the inverse of growth. he signiicant amount of energy deposited by the incident ions also support surface atoms self-organization. he combined efect of these two main processes leads to relevant surface modiications that can be to some extent controlled to prepare nanometer-scale (ordered) structures. Surfaces eventually get rough during ion erosion. When ions are incident normal to a surface, the resulting pattern consists of mounds and pits. Under oblique incidence, on the contrary, the net result is the formation of ripples with the “wave vector” either parallel or perpendicular to the surface component of the beam direction. he particle size and separation can be adjusted by varying the temperature, the ion energy and lux, and the ion irradiation geometry. Besides the use of extended ion beams, another means for nanostructuring interface regions is via FIBs (Orlof et al. 2003; Giannuzzi and Stevie 2005). he ield of high-resolution FIB has advanced rapidly since pioneering applications in the early 1970s. Its evolution mainly followed the evolution in the ion source technology, from the irst ield emission sources (adapted from surface physics) to the liquid metal sources that dei nitely enabled a very high resolution to be attained. he technological “push” for improving FIB performances was the need for failure analysis and repair in integrated circuits. he present use of FIB covers a wide range of applications, including ion lithography, direct implantation, lithographic mask repair, TEM sample preparation, deposition of materials, imaging (scanning ion microscopy, SIM), and a number of nanomachining uses. In particular, FIB is an advanced technique for magnetic nanofabrication, due to its lexibility for the preparation of well-dei ned arbitrary element shapes and array conigurations, the high spatial resolution and the possibility to join top-down (milling) and bottom-up (deposition) approaches. Many specialized techniques were developed to probe magnetic properties. Magnetic force microscopy (MFM) is a wellestablished method to probe the micro-nanomagnetic properties with lateral resolution down to nanometers (Figure 26.3). he technique yields information on both the morphological as well

26-4

Handbook of Nanophysics: Principles and Methods

26.3 State of the Art 26.3.1 Fundamental Properties of Magnetic Bodies

(a)

(b)

FIGURE 26.3 Topographic (a) and magnetic force (b) images of 1 μm side square rings made of permalloy. he magnetic force image has been measured ater full magnetization of the structures along the top-let to bottom-right diagonal. he outline of the topographic image has been superimposed on the magnetic force image.

as the magnetic properties of surfaces (Grutter et al. 1992; Carl and Wassermann 2002). herefore, the topology and the magnetic domain structure of a magnetic system may be correlated on the nanometer scale. MFM investigations are performed using a magnetically saturated tip attached at the end of an oscillating cantilever. he tip is then raster-scanned across the investigated surface. Each single scan line is scanned twice, but at two diferent distances between the tip and the surface. During the irst scan at small distance, the topography (AFM image) is measured, by taking advantage of the short-range repulsive forces between the tip and the surface. During the second scan at larger distance, basically only the long-range magnetic interactions between the tip and the surface are detected, from which the MFM image is obtained. he magneto-optic Kerr efect (MOKE) is currently used to study the magnetic properties (Bader 1991). When a beam of polarized light relects of a magnetized surface, the plane of polarization of the light can slightly rotate. his change is caused by of-diagonal elements in the dielectric tensor of the material as a consequence of spin–orbit coupling (Bader 1991). he theoretical explanation of the Kerr efect is that any plane-polarized light can be decomposed into two circularly polarized light. he index of refraction of the right-handed circularly polarized light and the index of refraction of the let-handed circularly polarized become diferent when a material is magnetized. he rotation is directly related to the magnetization of the material within the probing region of the light. he technique is sometimes referred to as SMOKE, where the S stands for surface. he experimental setup normally involves a laser beam passing through a polarizer and then relecting the light of the sample. he relected light then passes through a polarization sensitive detector. Slight changes in the plane of polarization will thus cause variations in the detected light intensity ater the second ilter. MOKE is frequently used to measure the hysteresis loops in thin magnetic i lms, by studying the light intensity as a function of applied magnetic ield, and to imaging magnetization domains by scanning the laser on the investigated surface.

his section is focused on the analysis of the relevant magnetic processes that play a role in determining the magnetic state of the nanomagnet. Each physical process is characterized by an energy term whose magnitude depends on the magnetic coniguration of the magnet. Some of the relevant magnetic processes (e.g., exchange and magnetocrystalline anisotropy) have a quantum mechanical origin. Unfortunately, the equations of the full quantum mechanical system have not been solved, yet, unless rough approximations or simplifying assumptions are introduced. he common approach is to use quantum mechanics to understand the physical phenomena and to i nd an expression for the energy of the individual magnetic process. Based on that, simpliied classical expressions for signiicant energies are determined. In these expressions, a number of phenomenological constants are used to specify the macroscopic properties of the magnetic material. he resulting picture is a model where the magnetic system is represented by an assembly of magnetic moments whose coniguration is fully speciied by a spatial varying magnetization M, intended as a local parameter averaged over a so-called physically small volume, i.e., a volume that is large with respect to the lattice constant of the material, but small with respect to the length over which M changes. Maxwell equations and classical physics are used for building an energy functional of the magnetic coniguration. he actual magnetic state of the system is eventually determined by variational calculus, imposing that the total free energy is a minimum. h is approach has been referred to as micromagnetics because the magnetic coniguration of the system comes out as the result of the variational calculation as opposed to the domain theory, where the class of magnetic conigurations of the system (i.e., magnetic domains separated by negligibly thin domain walls) is assumed, a priori. However, micromagnetics is not a microscopic theory, in the sense that the details of the atomic structure of matter are ignored and the material is assumed to be continuous by using a suitable averaging procedure similar to that used for discussing the macroscopic media in classical electrodynamics textbooks. 26.3.1.1 Magnetic Materials All known materials, under the action of a magnetic ield H, acquire a magnetic moment. he magnetization is a vector quantity M deined as the magnetic moment per unit volume. In most cases, M can be considered as a continuous vector ield without considering the atomic structure of the matter. For most materials, M is proportional to H: M = χH

(26.1)

where χ is called the magnetic susceptibility of the material. If χ > 0, the material is said paramagnetic, otherwise diamagnetic.

26-5

Laterally Coni ned Magnetic Nanometric Structures

It is possible to dei ne a vector B = μ0(H + M), called the magnetic lux density, that satisies Maxwell equations for the material. μ0 = 1.256 . 10−6 N/A2 is called the permeability of a vacuum. If (26.1) is satisied, then B = μ0(1 + χ)H. he quantity μ = μ0(1 + χ) is also referred to as the magnetic permeability. However, there are materials for which the relation between M and H is not linear, rather it is a multi-valued function of H that depends on the history of the applied ield. hese are called ferromagnetic materials. he typical magnetization curve (i.e., M vs. H) for this class of materials is shown in Figure 26.4a, where the component of M in the direction of the applied ield, MH, is plotted as a function of the magnitude of the ield. he bold curve is the so-called limiting hysteresis curve that is obtained by applying a suiciently large ield for saturating the material in one direction, decreasing it to zero and then increasing it to the saturation value in the opposite direction. As the sample is saturated in both directions, the curve is precisely retraced in consecutive cycles of the applied ield. he dashed curve is called the virgin magnetization curve and can be traced only ater the demagnetization of the sample that can be obtained by heating the material at high temperatures and cooling it in zero applied ield or by repeated cycles of applied ield with steadily decreasing amplitudes. If the ield is applied and decreased before the limiting hysteresis curve is reached, a minor loop is obtained, as shown in Figure 26.4b as a thin continuous line. here are ininite minor loops and with an appropriate sequence of applied ields, any point inside the limiting hysteresis curve can be reached. In particular, one can end a minor loop at H = 0 with any value of MH between +Mr and −Mr, where Mr is called the remanence magnetization or remanence, deined as the value of MH at zero applied ield in the limiting hysteresis curve. he coercive ield or force or coercivity is deined as the ield for which MH = 0 in the limiting curve. he saturation magnetization or spontaneous magnetization is an intrinsic property of the ferromagnetic material as it is deined as the value of MH at large applied ields. It depends on the temperature as shown in Figure 26.4b. he temperature TC at which the spontaneous magnetization becomes zero in zero applied ield is called the Curie temperature.

26.3.1.2 Exchange Interaction Exchange interaction is a quantum mechanical efect that tends to align the magnetic moment of neighboring atoms. It arises from the Coulomb coupling between the electron orbitals and from the Pauli exclusion principle. It is a strong but short-range interaction. he exchange energy operator for two localized spins is E ex = −JS1 . S2, where S1 and S2 are the spin operators and J is the so-called exchange parameter or integral. It can be calculated from irst principles once the electrons wavefunctions are known, but in most practical cases, approximations have to be introduced and the resulting accuracy is inadequate. Exchange integral is positive for ferromagnetic materials. Assuming that the angle between adjacent spins is small, a semiclassical approximation for the exchange energy can be worked out, in which the classical magnetization vector is used instead of the spin operators and only nearest-neighbor interactions are considered:

∫

Eex = wedV

(26.2)

we = A ⎡⎣(∇mx )2 + (∇my )2 + (∇mz )2 ⎤⎦ where we is the exchange energy density, and the volume integral is extended to all the body A is a constant speciic for the material, called exchange stifness constant m = M/Ms is a unit vector pointing along the local magnetization M which is assumed to have a constant size Ms mx, my, and mz are the Cartesian components of m he assumption of small angle between neighbors is justiied by the fact that exchange interaction is strong at short range; therefore, it will not allow any large angle to develop. he exchange energy is positive deined, it is minimum (actually zero) in the case of aligned magnetization and it is large for large spatial variations, consistent with the fact that the exchange interaction tends to smear out such conigurations. he semiclassical exchange functional is based on the assumption of a continuous

MH

1.0

Hc

H

Ms(T)/Ms(0)

Ms Mr

0.8 0.6 0.4 0.2 0.0 0.0

(a)

(b)

0.2

0.4

0.6

0.8

1.0

T/Tc

FIGURE 26.4 (a) Magnetization curves for a ferromagnetic material. he bold line is the limiting hysteresis loop, the dashed line is the virgin magnetization curve, and the thin line is one of the possible minor loops. Saturation magnetization Ms, remanence magnetization Mr, and coercive ield Hc are also indicated. (b) Temperature dependence of the saturation magnetization Ms for a ferromagnetic material.

26-6

Handbook of Nanophysics: Principles and Methods TABLE 26.1 Exchange Stif ness and Saturation Magnetization for Common Ferromagnetic Materials Materials

A [J/m]

Ms (A/m)

Fe Ni Co Permalloy (Ni80Fe20)

2.1 . 10 9.0 . 10−12 3.0 . 10−11 1.3 . 10−11

1.7 . 106 4.9 . 105 1.4 . 106 8.6 . 105

−11

material. No meaningful information can be drawn beyond the validity of this approximation, i.e., at length scales below several atomic distances. Typical values for the exchange stifness and saturation magnetization for common magnetic materials are reported in Table 26.1. 26.3.1.3 Magnetic Anisotropy he exchange interaction is isotropic in space meaning that the energy of a given magnetic state does not depend on the direction in which the body is magnetized. It can be demonstrated that a magnetic system subject only to thermal luctuations and to exchange interaction behaves like a paramagnet, i.e., it asymptotically magnetizes up to Ms in increasing applied ield, but shows no magnetization at zero magnetic ield. his contradicts the experiments where nonzero magnetization is oten observed as the magnetic ield is switched of. he reason for the failure is that real magnetic systems are never fully isotropic and not all the directions in space are equally probable in thermodynamic terms; therefore, the value of the magnetization does not always average to zero under the action of the thermal luctuations. he work needed to bring a body from the demagnetized to the fully magnetized state is called the magnetic free energy. It includes the isotropic contribution coming from the exchange interaction. But other energy terms contribute to the magnetic free energy, some of them are anisotropic, i.e., show directional dependence. An example is the magnetocrystalline anisotropy whose origin is related to the spin–orbit and orbit–lattice interaction. he shape of the body can also introduce anisotropy, but this efect is customarily included in the dipolar interaction efect (see. Section 26.3.1.6). Magnetocrystalline anisotropy is usually small with respect to exchange, the latter being the main process that forces the spins to align, making a net magnetization to appear at macroscopic level, but the direction of the magnetization is determined only by the anisotropy, since the exchange is isotropic. he result is that the total free energy depends on the direction in which the magnetic ield is applied. he directions along which the magnetization energy is minimal are called the easy magnetization axes. For a given crystal structure and atom species, a quantomechanical calculation of the magnetocrystalline anisotropy is possible, but the accuracy is generally poor. Further, whatever the microscopic origin of the anisotropy is, it is always possible to write phenomenological expressions for the anisotropy energy as a series expansion that takes into account the crystal symmetry, with coeicients taken from the experiments. he

anisotropy energy is written as a volume integral of an anisotropy energy density:

∫

Ea = wa dV

(26.3)

where the integral is extended over the volume of the magnetic body. he anisotropy energy density wa has speciic expressions for the diferent symmetries. In hexagonal crystals, uniaxial symmetry is observed: wa = K1(1 − mz2 ) + K 2 (1 − mz2 )2 + ⋯ = K1 sin2 θ + K 2 sin 4 θ + ⋯

(26.4)

where the z axis is parallel to the crystalline c-axis; K1 > 0 and K 2, called anisotropy constants, are the expansion coeicients speciic for the material and m x, my, and mz are the Cartesian components of the reduced magnetization unit vector m = M/Ms. Although the power series expansion can be carried to higher order, in all practical cases it is not required and even K 2 is oten negligible. For cubic symmetry, the anisotropy energy is wa = K1(mx2m2y + m2y mz2 + mz2mx2 ) + K 2mx2m2y mz2 + ⋯ = (K1 + K 2 sin2 θ)cos 4 θ sin2 ϕ cos2 ϕ + K1 sin2 θ cos2 θ + ⋯ (26.5) he main anisotropy constant K1 is positive for some cubic materials (like Fe) and negative for others (like Ni). For the former, the easy magnetization axes are along (100) and equivalent directions, i.e., the sides of the cubic cell, while for the latter the easy magnetization axes lie along (111), i.e., the long diagonals of the cubic cell. Anisotropy constants for common magnetic materials are reported in Table 26.2. 26.3.1.4 External Applied Field As a consequence of the Lorentz force, a magnetic moment μ in an applied ield H is subjected to a torque G = μ0 μ ×H. h is allows to dei ne a potential energy for a magnetic moment in an applied ield U = −μ0 μ . H. In the case of a magnetized material, the magnetization vector M represents the local magnetic moment density, i.e., the magnetic moment per unit volume at a given position. It is, therefore, possible to dei ne an energy functional that describes the interaction of the magnetized body with the external ield, also called the Zeeman energy term: TABLE 26.2 Anisotropy Constants for Diferent Ferromagnetic Materials Materials

K1 (J/m3)

Symmetry

Fe Ni Co Permalloy (Ni80Fe20)

4.8 . 104 −5.7 . 103 5.2 . 105 ≈ 2 . 102

Cubic Cubic Uniaxial Cubic

26-7

Laterally Coni ned Magnetic Nanometric Structures

∫

E Z = w Z dV

(26.6)

wZ = −μ 0 M ⋅ Hext = −μ 0 Ms m ⋅ Hext where the volume integral is extended to the volume of the magnetized body and Hext is the external applied ield. 26.3.1.5 Magnetic Hysteresis and Superparamagnetism It is instructive to analyze the behavior of a magnetic system in an applied ield subjected only to exchange interaction and magnetic anisotropy. In absence of any other energy terms, the magnetic free energy is minimized by the uniformly magnetized state. he magnetic state of the system is then fully speciied by the angle θ between the magnetization M and the z-axis. Let us assume that the system has a uniaxial anisotropy with easy axis directed along the z-axis and that a magnetic ield H (positive or negative) is applied along the z-axis. Since for uniformly magnetized states the exchange energy (26.2) is zero, the magnetic free energy of this system is the sum of the magnetic anisotropy energy and the Zeeman term: E = V (K1 sin2 θ − μ0 Ms H cos θ)

(26.7)

where V is the volume of the body K1 is the main uniaxial anisotropy constant (for simplicity K 2 is assumed to be zero) his function is shown in Figure 26.5 for diferent values of the applied ield. For H = 0, the curve has two equivalent minima at θ = 0 and θ = π, corresponding to the magnetic easy axes for the uniaxial anisotropy, separated by an energy barrier whose height is K1V. As the magnetic ield is increased and positive, the

E

τ = τ0e ΔE / kBT

K1 V

θ

(26.8)

where ΔE is the height of the energy barrier kB is the Boltzmann’s constant T is the absolute temperature τ0, also called the pre-exponential factor, is the characteristic attempt time of the system and depends on the details of the microscopic processes involved in the transition

H=0 H < HA H > HA

0

minima at θ = 0 become deeper than the other, and the energy barrier progressively lowers until it disappears at a critical ield value, called the anisotropy ield HA = 2K1/Ms. he role of the two minima are exchanged if the ield is increased in the negative direction; i.e., the minima at θ = π becomes deeper than the other and the energy barrier will disappear at H = −HA. he energy scale is determined by the volume of the magnetic system. If the volume is large enough, the thermal energy kBT at a given temperature will be negligible with respect to the energy range of (26.7), and the magnetic system will spend most of the time in the states corresponding to the local minima of the free energy. As the magnetic ield is varied, the free energy curve changes, as shown in Figure 26.5, and the system follows the local minima of the free energy. Let us suppose the system is magnetized along −z direction (i.e., the system is initially in the minima at θ = π) and a magnetic ield is applied in the +z direction. As long as an energy barrier exists between the two minima (i.e., for H < HA), the transition toward the absolute minimum is hindered and the magnetization will remain in the initial state. For H > HA, there is no barrier and the magnetization will switch abruptly to θ = 0, i.e., parallel to the applied ield. Once the magnetization has switched, it cannot switched back by lowering the ield below HA because a new energy barrier exists for the reverse transition and it needs a ield larger than −HA for the reverse transition to occur. his phenomenon is called the magnetic hysteresis and explains why a ferromagnetic material, once it is immersed in a strong magnetic ield, maintains its magnetization even if the magnetic ield is removed. Magnetic hysteresis is a desired property in data storage applications, where the magnetic transitions between energetically equivalent states, should not occur spontaneously. Magnetic hysteresis occurs because the local minima of the magnetic free energy are separated from the absolute minimum by energy barriers. When the system is in a local minimum, it is said that it is in a metastable state because, sooner or later, the thermal luctuations will make the system to transition toward the absolute energy minimum. But how long the transition will take to occur? he relaxation time τ for a barrier-limited, thermally activated process, based on the Maxwell–Boltzmann statistics is given by the Arrhenius equation

π

FIGURE 26.5 he magnetic free energy for a magnetic system subjected to exchange interaction and magnetic anisotropy, plotted for diferent values of the applied ield.

For magnetization switching, typical values for τ0 are in the 10−8−10−12 s range, slightly dependent on the temperature and other quantities, while ΔE = K1V. Even if the actual value of the pre-exponential term is a priori not precisely known, it is the

26-8

Handbook of Nanophysics: Principles and Methods TABLE 26.3 Relaxation Time for Spherical Particles with Diferent Diameters Material

Diameter (nm)

τ (s)

6.5 8.0 14 18 29 36

7.0 . 10−2 4.2 . 105 1.7 . 10−2 2.4 . 106 4.3 . 10−2 4.0 . 105

Co Fe Ni

strong dependence of the exponential factor on its argument K1V/kBT that determines the order of magnitude of the relaxation time. In order to demonstrate how strong this dependence is, Table 26.3 gives the relaxation time for Co and Ni spherical particles, as a function of their diameter, at room temperature (kBT = 4.14 . 10−12 J) and assuming τ0 = 10−9 s. Within a small change in the particle diameter, the relaxation time becomes orders of magnitude larger or smaller of an arbitrarily chosen observation time τexp of 100 s. A completely diferent value of τ0 will shit slightly the diameters corresponding to the same relaxation times, but it is always possible to identify a sharp transition between short and long relaxation times. Diferent magnetic materials, corresponding to diferent values of K1, have diferent transition diameters, but the general behavior is that ferromagnetic materials show two distinct regimes: τ > τexp. Given a characteristic observation time τexp, the transition between the two regimes is quite sharp and depends on the diameter of the particle and on its magnetic anisotropy. If τ >> τexp, the magnetization does not change during the observation time. his is the region of stable ferromagnetism where a magnetic system, once magnetized, held its magnetization for times as long as τ. On the other hand, if τ > μ and the exchange-coupled system behaves like a huge atom with spin number in the 103–104 range, instead of 10 0 like in conventional paramagnets. As far as it concerns, the general case with K1 ≠ 0, the shape of the magnetization curve vs. H is no more a Langevin function, but the general behavior is conserved: We have zero magnetization in zero applied ield (i.e., no magnetic hysteresis) and magnetic saturation for | H | ≫ kBT / μ 0 MsV . Reducing the size of a ferromagnetic system makes the transition from τ >> τexp to τ > 1. his result is similar to that obtained for a system of independent magnetic atoms, also called a paramagnetic gas. For that, MsV must be substituted by the magnetic moment of the single atom, μ. he main diference between a paramagnetic gas and an exchange-coupled magnetic system is that for the latter saturation is obtained at

μi

3

i

+

3[μ i ⋅ (r − ri )](r − ri ) ⎤ ⎥ | r − ri |5 ⎦ (26.11)

where μi is the magnetic moment of the atom i and the sum extends to all the atoms in the body. In micromagnetics, the atomic structure is ignored. he local magnetic moment is represented by the magnetization M, i.e., the average magnetic moment per unit volume, and the average is taken over a volume that contains a large number of atoms. It can be demonstrated that, in the continuum approximation, the magnetostatic ield can be calculated as the ield generated by a distribution of volume and surface density of “magnetic charges”: Hd (r ) =

∫ V

⎛μ MV ⎞ Mz = L⎜ 0 s H ⎟ Ms ⎝ kBT ⎠

⎡

∑ h (r) = ∑ ⎢⎣− | r − r |

ρV (r ′)(r − r ′ ) ρS (r ′ )(r − r ′ ) dV + dS 3 |r − r′| | r − r′ | 3

∫

(26.12)

S

where the irst and the second integrals are over the volume and the surface of the body, respectively, and r′ is the integration variable. he volume and surface magnetic charge densities have the following expressions: ρV = ∇ ⋅ M ρS = n ⋅ M

(26.13)

where n is a unit vector normal to the surface. Magnetic charges are, therefore, generated by the spatial variations of M, whenever

26-9

Laterally Coni ned Magnetic Nanometric Structures

they are generated in the volume by the divergence of the magnetization vector, or at the discontinuity represented by the body surface, where the magnetization must sudden drop to zero. It must be pointed out that the magnetic charges associated to the above densities are useful mathematical abstractions, but they have no physical meanings. he magnetostatic ield is also called demagnetizing ield because, inside the body, it acts against the “magnetizing ield,” i.e., the external applied ield that induces magnetization in the body. In general, the demagnetizing ield is not uniform inside the body even if the magnetization is uniform. For particular geometries, like spheres, ellipsoids, ininitely long cylinders, and thin ilms, the resulting demagnetizing ield is uniform and reads Hd = − N M

(26.14)

where N is symmetric a tensor with unit trace called the demagnetization tensor. If the symmetry axes of the body are directed along the Cartesian axes, the tensor is diagonal. he demagnetization tensor for few geometries is reported in Table 26.4. A magnetostatic energy is associated to the magnetostatic ield. It can be considered as the energy stored in the magnetostatic ield or as the sum of the works needed to orient the individual atomic magnetic moments in the ield generated by the others. In this case, it is also referred to as magnetostatic self-energy. he magnetostatic energy is also called demagnetization energy or dipolar energy. he magnetostatic energy is a functional of the magnetization vector ield:

∫

E d = w d dV (26.15)

1 w d = − μ 0 Hd ⋅ M 2 where the integral extends over the volume of the body and wd is the magnetostatic energy density. Using Maxwell equations and the boundary conditions at ininity on the magnetostatic potential, it can be demonstrated that the following expression is equivalent to (26.15): TABLE 26.4 Components of the Demagnetization Tensor for Diferent Geometries of a Body Geometry

Nx = Ny

Sphere Ininite cylinder with axis along z hin ilm with normal along z Prolate spheroid or egg-shaped revolution ellipsoid with long axis along z

1/3 1/2 0

1/3 0 1

1 − Nz 2

1 ⎡ 1 ⎛1+ ξ⎞ ⎤ − 1⎥ ⎢ ln m − 1 ⎣⎢ 2ξ ⎜⎝ 1 − ξ ⎟⎠ ⎥⎦

Oblate spheroid or disk-shaped revolution ellipsoid with short axis along z

1 − Nz 2

⎤ 1 ⎡ 1 sin −1 ξ ⎥ ⎢1 − ξ 2 ⎣⎢ m ξ ⎦⎥

Nz

2

Note: m > 1 is the ratio between the major and the minor axis of the revolution ellipsoid and ξ = m2 − 1/ m .

1 Ed = μ0 H d2 dV 2

∫

(26.16)

In this case, the integral extends over all the space and shows that the magnetostatic energy is positive deinite and that it is zero only if Hd = 0 everywhere. his is the pole avoidance principle that states that a magnetized body tries to avoid as much as possible the formation of magnetic charges, the latter being the sources of the demagnetizing ield. In many applications it is possible to assume that the body is uniformly magnetized. In this case in (26.13) ρV = ∇⋅ M = 0 and only surface magnetic charges are formed. he resulting demagnetizing ield (26.12) and magnetostatic energy (26.15) depend only on the shape of the body and on the direction of the magnetization vector. he angular dependence of the magnetostatic energy per unit volume is also referred to as the shape anisotropy. An illustrative example is the uniformly magnetized thin ferromagnetic i lm. Using (26.14) and the appropriate entry in Table 26.4, the demagnetizing ield can be calculated as Hd = − N M = − zˆ M z

(26.17)

hus the demagnetization ield has only a component directed along the surface normal. In (26.15), the expression to be integrated over the volume of the i lm is H d ⋅ M = − M z2 ; therefore, the magnetostatic energy per unit volume is 1 1 wd = μ 0 M z2 = μ 0 MS2 cos2 θ 2 2

(26.18)

where θ is the angle between the magnetization vector and the i lm normal. his expression has the same formal form of the anisotropy energy density described in (26.4) or (26.5). he constant μ 0 M S2 /2 > 0 plays the role of the anisotropy constant and usually its value overwhelms that of the magnetocrystalline anisotropy of the i lm. In this case, the shape-induced anisotropy tends to keep the magnetization within the i lm plane. Similar arguments holds for elongated bodies, where the shape anisotropy tends to align the magnetization along the major axis of the body. 26.3.1.7 Magnetic Domains he existence of magnetic domains was irst postulated by Weiss in 1907 (and experimentally demonstrated forty years later) for explaining why a small magnetic ield can induce a huge change in the magnetization state of a ferromagnetic body and why the magnetization can assume any value between −Ms and +Ms, depending on the history of the applied ield. Magnetic domains are regions within the ferromagnetic material, which are uniformly magnetized at the saturation value Ms, but the direction of the magnetization vector varies from domain to domain. Magnetic domains are separated from each other by thin regions, called domain walls, where the magnetizations vary. he fraction of the volume occupied by the domain walls is usually

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Handbook of Nanophysics: Principles and Methods

negligible with respect to the volume of the body. Within each Aπ2 we = A ⎡⎣(∇mx )2 + (∇my )2 + (∇mz )2 ⎤⎦ = 2 (26.20) magnetic domain, the magnetization is aligned to some easy L magnetization direction. he measured magnetization value is the average over the domains structure and it can assume any he exchange energy per unit domain wall area is thus value between zero and Ms and any direction, depending on the number and orientation of the magnetic domains involved in Ee Aπ2 (26.21) = the measurement. A small ield applied to a ferromagnetic body σ L causes a large efect on the domain structure because it does not have to reorder the atomic magnetic moments, which are already where σ is the area of the wall. Let us assume that the ferroordered, but only to make the domains to align to the applied magnetic material has a uniaxial magnetocrystalline anisotropy ield. his can be achieved by growing the size of the domains with easy magnetization axis along the z axis and that K2 = 0. that are already aligned at the expenses of those that are not. he anisotropy energy density is thus given by (26.4): his process is called domain walls motion, and energetically costs a fraction of the energy needed for the rotation of the whole πy wa = K1(1 − mz2 ) = K1 cos 2 (26.22) domain. L Domain walls are usually classiied by the angle between the magnetization directions in the adjacent domains; thus we have he anisotropy energy per unit area is therefore 90° domain walls when they separate perpendicularly mag+ L /2 netized domains and 180° domain walls when they separate Ea KL (26.23) = wa dy = 1 domains of opposite magnetization. Two common types of 180° σ 2 − L /2 domain walls are shown in Figure 26.6. In a Bloch domain w all (Figure 26.6a), the magnetization rotates in a plane parallel to the domain wall while in a Néel domain wall (Figure 26.6b), the As far as the dipolar interaction is concerned, we observe that, magnetization rotates in a plane perpendicular to the domain for this domain wall, ∇ . M = 0; therefore, we have no volwall. Domain walls in which the magnetization is a function of ume charges. We neglect, for the moment, the surface charges only one parameter (in these cases the distance from the wall because we assume they are at ininity; then there are no magnetic charges (i.e., sources of demagnetizing ield) and therefore surface) are called 1D walls. he formation of a domain wall costs energy because (a) adja- magnetostatic energy is zero. he total energy per unit area of cent spins are not parallel and this costs exchange energy and the domain wall is thus the sum of two terms: (b) spins are not pointing along the easy magnetization axes and E Aπ2 K1L this costs anisotropy energy. he formation energy for a Bloch (26.24) = + domain wall can be readily calculated making the assumption σ L 2 that, in the transition region, the rotation angle of the magnetization is a linear function of the distance. Let us assume that the he irst term is proportional to 1/L and tends to make the wall thickness of the transition region is L and that the magnetiza- as large as possible, while the second term, proportional to N, tion is pointing along +z in the y > +L/2 region and along −z in tries to shrink the wall and make it as small as possible. he lowthe y < −L/2 region. he domain wall is centered around the y = 0 est domain wall energy corresponds to the condition dE/dL = 0, plane, and let us assume that the magnetization rotates towards which leads to the following domain wall width: the positive x axis. In the transition region, the magnetization 2A unit vector is thus L=π (26.25) K1 M ⎛ πy πy ⎞ m= = ⎜ cos ,0,sin ⎟ (26.19) that represents the result of the optimal balance between Ms ⎝ L L ⎠ exchange and anisotropy energy costs. he corresponding he exchange energy density is given by (26.2) and it is constant energy cost per unit area is within such a domain wall: E = π 2A K1 (26.26) σ

∫

(a)

FIGURE 26.6

(b)

(a) A Bloch domain wall. (b) A Néel domain wall.

he assumption that the rotation angle of the magnetization is a linear function is useful for the calculations, but it does not have physical basis. However, the more general hypothesis that the rotation angle is an arbitrary function of y (called the Landau– Lifschitz’s one-dimensional wall) leads to the same conclusions: here is a inite domain wall width proportional to A /K1 and

26-11

Laterally Coni ned Magnetic Nanometric Structures

an energy per unit area proportional to AK1 . he arbitrary function that results from the energy minimization leads to the following domain wall: m=

M = (sin θ, 0,cos θ) Ms

(26.27)

where cosθ = tanh y/L. In most cases, the formation of magnetic domains saves magnetostatic energy associated to the dipolar ield. If the energy cost for the formation of the domain wall is lower than the gain in magnetostatic energy, then the magnetic state of the body with the domain wall has a magnetic free energy lower than the state without the domain wall. Magnetostatic energy is saved because surface magnetic charges are always generated at the edges of the body, where M starts and stops according to (26.13), second equation. Magnetic charges are sources of magnetostatic ield which ills space, but this costs μ 0 H d2 /2 J/m3, as shown in (26.15). Magnetostatic energy can be saved if domain walls are formed as shown in Figure 26.7a and b. he single-domain structure in Figure 26.7a has no domain walls and magnetic charges form at the top and bottom edges, causing a large dipolar energy. Breaking the body in two domains reduces the dipolar energy because part of the positive charge is moved from the top to the bottom surface. Charges of opposite sign attract each other, reducing the energy of coniguration (b) at the energy cost of a domain wall. Coniguration (c), also called the closure domain structure, has no magnetic charge because M is parallel to the edges, but introduces a number of domain walls. he actual magnetic coniguration will be the result of a balance between the energy cost of the domain walls and the energy cost of the magnetostatic ield. On reducing the size of the body, the relative contributions of the magnetostatic and domain wall energy to the total magnetic free energy are changed. he former is proportional to the volume of the body, the latter to the surface of the domain wall. At small

(a)

+

+

+

+

–

–

+

+

–

–

–

–

+

+

–

–

(b)

(c)

FIGURE 26.7 A ferromagnetic body which is (a) uniformly magnetized, (b) divided into two magnetic domains, and (c) an example of a closure domain structure.

sizes, there will be a point at which the surface-dependent term will prevail over the volume term and the single-domain state will be favorable energetically. In this state, the ferromagnetic body behaves like a permanent magnet, if the thermal luctuations are low, or superparamagnetic (cf. Section 26.3.1.5), if the thermal luctuations are larger than the energy barriers induced by the anisotropy or shape. 26.3.1.8 Micromagnetic Equations he total magnetic free energy of a ferromagnetic body immersed in a magnetic ield can be expressed as an integral over the volume of the body: G(m, H ext ) =

∫ (w + w + w e

a

Z

+ wd )dV

(26.28)

body

where we, wa, wZ , and wd are deined in (26.2), (26.3), (26.6), and (26.15), respectively m(r) = M(r)/Ms By solving a so-called variational problem it is possible to ind all the possible conigurations m(r) that are local minima of (26.28), under the constraint that |m(r)|=1 everywhere in the body. hey correspond to the equilibrium states of the system. It can be demonstrated that the solutions of the variational problem satisfy the condition m × H eff = 0

(26.29)

where Hef is called the efective ield, deined as H eff = H ext + H d +

2A 2 1 ∂wa ∇ m− μ0 Ms μ0 Ms ∂m

(26.30)

Here ∇ 2m and ∂wa/∂m are compact notations for vectors whose Cartesian components are ∇2mx , ∇2my , and ∇2mz and ∂wa / ∂mx , ∂wa / ∂my , and ∂wa / ∂mz , respectively. he condition (26.29) states that the torque exerted on the magnetization must vanish at each point r of the ferromagnetic body, i.e., that the magnetization is parallel to the efective ield. he condition (26.29) must be solved together with the demagnetizin g ield equations (26.12) and (26.13), which establish a set of nonlocal, nonlinear, integrodiferential equations called micromagnetic or Brown’s equations that give complete information on the stable and metastable equilibrium states for the magnetic body, corresponding to the speciied external ield Hext. However, the solution of such equations is deinitely not straightforward and requires complex numerical calculations. An alternative approach to Brown’s equations is the dynamical micromagnetic method also known as Landau–Lifschitz–Gilbert (LLG) equation. Starting from a given magnetic coniguration, the system is allowed to relax toward the equilibrium solution with a speed that depends on a phenomenological damping factor α. he LLG equation is

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Handbook of Nanophysics: Principles and Methods

dm dm = −γ 0 m × H eff − α m × dt dt

(26.31)

where t is the time γ0 = 1.76086 . 10−11 rad/s/T is the electron gyromagnetic ratio Hef is given by (26.30) α is a dimensionless in the range of 0.004 to 0.15 for most materials In some sense, Brown static equations (26.29) and (26.30) can be considered as a particular case of LLG equation (26.31), but the latter is much easier to solve numerically.

26.3.2 Nanofabrication by Focused Ion Beam (FIB) he use of FIB as a nanostructuring tool has much increased in the last decade as new instruments, oten combining an ion beam column with a SEM in a so-called double-beam apparatus, have been developed speciically for research and academic purposes. he versatility ofered by the direct approach to material nanomachining, performed through ion sputtering at the nanoscale, and the easiness of FIB operation, which is very similar to the SEM one, have made FIB an ideal tool for a variety of applications: nanoprototyping and device modiication, cross-section analysis and TEM sample preparation, and surface and thin i lms patterning (instead of using dedicated lithography systems). In the following, we will describe the main components and the working principle of an FIB instrument and review the most common nanofabrication types. 26.3.2.1 FIB Apparatus A FIB apparatus (Orlof et al. 2003; Giannuzzi and Stevie 2005) shares many similarities with the well-known SEM: in essence it can be considered as a scanning ion microscope. he ion-optical

column, schematized in Figure 26.8, consists of an ion source, electrostatic lenses, and a set of mechanical apertures, devoted to the formation of a inely focused beam, and a scanning system to move the beam on the sample over a desired pattern. he column is mounted on a vacuum chamber where the sample is hosted on a multi-axis manipulator. Much of the FIB nanomachining capability is due to the development of liquid metal ion sources (LMIS), cold ield-emission sources featuring high brightness (107 A/cm2 sr), i.e., a high emission current from a nanosize area with low angular divergence of the ion trajectories. he source is a metallic tip wetted by the liquid metal (usually gallium), mounted in front of an extractor electrode held at a high negative potential (10–12 keV) with respect to the tip, which is positively biased at the beam acceleration potential (5–50 keV). he liquid metal, immersed in the extractor electrical ield, is deformed and takes the shape of a cone (the “Taylor cone”) protruding out of the tip as a result of the balance between the attracting ield force and the opposing surface-tension force. he high electrical ield (108 V/cm) concentrated at the apex of the cone, having a radius of few nanometers, is responsible for the ion evaporation of the liquid. he source size as seen by the ion-optical system (virtual source) is around 30–50 nm and it will be demagniied to the beam spot size by the ion-optical system. he choice of Ga as a source material is motivated by the combination of a low melting point (29.8°C) with a high surface tension, which results in small energy spread and angular divergence of the beam, key parameters to minimize the contribution of lens aberrations to beam spot size. he extracted ions are shaped into a beam and focused on the sample by the condenser and the objective lenses, respectively. hese are electrostatic lenses with cylindrical symmetry and are preferred over electromagnetic ones (those employed to focus electrons in SEMs) because they are more compact and easy to realize, and their focus length is independent of the charge/mass ratio of the ion. A typical electrostatic lens consists of three (a) (b) (c) (d) (e)

(f ) (g)

FIGURE 26.8 Double-beam (FIB-SEM) instrument and a scheme of the FIB column: (a) LMIS source, (b) extractor, (c) condenser lens, (d) apertures, (e) blanking plates, (f) stigmation and scanning octupole, and (g) objective lens.

26-13

Laterally Coni ned Magnetic Nanometric Structures

cylinders or annular disks closely packed along the optical axis, where the outer electrodes are held at ground potential and the inner one is at the focus potential (either positive or negative). he focusing action occurs at the gap between the electrodes by the Coulomb force. his kind of lens, known as symmetric Einzel lens, is always focusing, irrespective of the sign of the inner potential, and it does not change the beam energy. Below the condenser lens, there is a set of mechanical apertures crossing the beam path with variable diameters to select the beam portion entering the inal objective lens. he beam current and probe diameter on the sample are proportional to the aperture size. Typical beam currents range between few picoamperes to tens of nanoamperes and the corresponding spot size from few to hundreds of nanometers. At this stage of the column there is also the beam blanker, a couple of plates switching of the beam rapidly (100 ns) by deviating it from the axis. he beam scanning and the adjustment of astigmatism is performed by an octupolar lens system, eight electrode plates arranged as the sides of an octagon and switched on in the proper sequence. he vacuum chamber is equipped with detectors collecting the secondary particles (electrons or ions) generated by the ion beam interaction within the sample. Such signals can be employed to return an image of the scanned area, in strict analogy with the imaging performed with SEM. he focused beam is controlled by a pattern generator system, which selects the pattern shape and the scanning path to cover the pattern, the dwell time spent on each pixel, and the overlap between adjacent spots. hese parameters, together with beam spot size, are those relevant to determine the inal quality of the nanofabrication.

3000 eV/nm average values. he momentum transfer changes the particles’ trajectory, and we are interested in the maximum scattering angle of the primary ion (ϕM):ϕM gradually increases to 180°, the backscattering angle, as m2 approaches m1. h is means that ions moving inside a matrix of lighter atoms are weakly delected, and those processes, described in the following, depending on the energy transfer in the backward direction, like sputtering, or on the lateral spread of ion trajectory, like ion damage, have a reduced eiciency. As depicted in Figure 26.9, the energy transferred to recoil atoms by the primary ion is high enough to trigger a sequence of scattering events between each recoil and its nearest neighbors, and generate a so-called collisional cascade process. Atoms involved in the cascade are displaced from their equilibrium position, giving rise to a local disorder of the sample (structural and compositional for compound targets) referred to as ion damage. hose atoms in the surface region receiving suicient energy to overcome the surface binding energy and a momentum transfer in the outward direction are ejected out of the sample. he surface erosion produced by atom ejection is known as ion sputtering or milling. he eiciency of the sputtering process is quantiied by the sputtering yield (YS), the number of atoms ejected per incident ion, which depends on the same parameters introduced for the nuclear stopping power, energy, masses and atomic numbers, and on additional ones like the surface binding energy (W) of the target and the beam incidence angle with respect to the surface (θ). Sputtered atoms

26.3.2.2 Ion–Solid Interactions he dominant energy-loss mechanism for ions in the tens of kiloelectron volts range is the nuclear energy loss, the energy and momentum transferred in binary elastic collisions from the moving ion to the atomic nucleus at rest inside the solid (Townsend et al. 1976). In a pictorial way, we could think of a billiard balls’ collision, but more precisely, the ion is scattered by the repulsive potential of the nucleus screened by the electron shells (screened nuclear potential) since ion energy is not high enough to penetrate the inner electron shells and hit the nucleus (Rutherford scattering). he nuclear stopping power Sn(E) [eV . cm2] is the quantity dei ning the eiciency of this interaction mechanism, and the nuclear energy loss per unit length traveled by the ion inside the solid is given by dE/dx = ρNSn(E) [eV/cm], where ρN is the target atomic density. Sn(E) depends on the primary ion mass (m1), atomic number (Z1), energy (E1), target atomic mass (m2), and atomic number (Z2): it increases with m1 and also with m2/m1 until the ratio is approximately unity, then it saturates; in the energy range typical of FIB (up to 50 keV), it rapidly increases with E, except for very low m1, where it has a maximum at few kiloelectron volts and then decreases. he nuclear energy loss is strongly modulated by ρN, and for Ga at 30 keV, it may vary between 300 and

FIB ions

Collisional cascade

FIGURE 26.9 Ion–solid interaction: sputtering and collisional cascade efects generated by the incoming FIB ions.

26-14

Handbook of Nanophysics: Principles and Methods

YS increases with m1 and with the m2/m1 ratio, and decreases with W. It is slowly increasing with E1 following the Sn(E) behavior. Dependence on θ relects the eiciency of energy transfer in the surface region. YS increases as 1/cos θ from 0° to 70°–80°, because as θ grows, more ion track is spent close to the surface; for values above 80° ion relection at the surface takes place and YS drops. Typical YS values for Ga at 30 keV, impinging at θ = 0°, are in the range of 1–10 atoms/ion, depending on the W value. he collisional sequence of the primary ion ends when its kinetic energy drops below a critical value and the ion stops inside the solid becoming an implanted ion. he distance between the ion position and the surface, projected on the incidence direction, is deined as the ion projected range (Rp). Ion distribution inside the solid, plotted as a function of depth, follows a Gaussian-like proile peaked at Rp, the average ion projected range. Rp increases with E1 and decreases with the ratio m2/m1; typical values for Ga at 30 keV are between 10 and 80 nm, depending on the target density. Besides the nuclear component, the other mechanism contributing to ion energy loss is the electronic energy loss generated by the inelastic interaction with electrons of the solid. Valence or conduction band electrons are excited above the Fermi level and may escape the sample as secondary electrons, provided they are generated few nanometers below the surface. he electronic stopping power is proportional to ion velocity ( Se (E) ∝ E11/2 ) and, in FIB conditions, it is roughly a 10% of the nuclear stopping value. he ion-induced secondary electrons yield (γe) can be greater than unity, and it is generally higher than the one generated by primary electrons because range and energy transfer of ions are much shallower than for electrons. he secondary electrons can be collected to obtain a FIB microscopy of the scanned area, and they also play an important role in the ion beam–induced deposition (IBID) process. Here, precursor gas molecules are injected close to the surface, adsorbed on it, and decomposed by FIB irradiation. he gas molecules, e.g., metalorganic compounds with a metal atom surrounded by a cage of organic species, are dissociated by the primary beam and by the outgoing secondary particles (ions and electrons): the heavy metal component sticks on the surface, forming a deposit, and volatile fragments are evacuated. he decomposition cross section of these molecules is typically high at few electron volts, closely matching the low energies of secondary electrons; thus, these behave as very eicient bond breakers.

26.3.2.3 Nanofabrication by FIB FIB nanofabrication can be performed using three diferent approaches, as sketched in Figure 26.10: material erosion (ion milling, Figure 26.10a), material structure/composition modiication (ion-induced damage, mixing, and ion implantation, Figure 26.10b), or material addition (IBID, Figure 26.10c). Each one of these processes is strictly related to a particular aspect of the ion–solid interaction between the incoming ion and the atoms of the sample. 26.3.2.3.1 Nanofabrication by Ion Milling Ion milling can produce nanostructures either with a “positive” process, where the structure is laterally dei ned by removing the material around it, or with a “negative” process, where the structure is the empty volume removed from the material. Due to the typical sputtering rates (tenths of μm3/nC) and the sequential nature of the scanning process, FIB milling is suited to surface structuring, with depths limited to a few microns and areas in the range of few hundreds × hundreds μm2. Besides ion–solid interaction parameters, nanofabrication by ion milling is strongly inluenced by ion beam parameters like the beam spot size and proi le, the dwell time, and the overlap. hough minimum spot size of 5–10 nm can be achieved with the lowest beam currents, lateral resolution of FIB milling is always larger than FIB spot size and it is limited by two efects: lateral range of ion–solid interaction and beam proi le. he irst efect can be quantiied through the lateral ion range, whose values increases from 10% to 50% of Rp as m2/m1 increases, and represents the area from which atoms can be sputtered of the sample. Beam proile is the spatial distribution of ions around the beam axis. It follows a Gaussian proi le in the central region, with a full width at half maximum (FWHM) corresponding to the beam spot size, but the external tails deviate from the Gaussian distribution, extending higher and longer. he problem of such a beam shape is the erosion contributed by these tails: the edges and sidewalls of the cuts become rounded and sloped, respectively, and not square-sharp as ideally desired. his worsens the lateral resolution as the milling depth increases. hese efects can be minimized by selecting a small beam current spot size: Typical sidewall slopes range from 1°–2° to 7°–8° on going from few picoamperes to nanoampere beams. Milling a pattern implies that material has to be removed down to a certain depth, and one can realize this either by milling a Precursor gas

(a)

(b)

(c)

FIGURE 26.10 Types of FIB nanofabrication: (a) material erosion by ion milling, (b) structural damage and atomic mixing by ion irradiation, and (c) material addition by ion beam–induced deposition.

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Laterally Coni ned Magnetic Nanometric Structures

single frame, where each pixel has the full dwell time necessary to reach the target depth, or by repeating many frames at a fraction of the full dwell time. he irst kind of approach results in a “dirty” pattern, with regions behind the beam scanning direction coated by redeposited sputtered material; conversely, repeating the frame many times helps in keeping the structures clean of redeposition and well deined. Dwell time also plays a role in the sharpness of the patterned nanostructures. It has been shown (Gazzadi et al. 2005) that higher dwell times (10, 100 μs) give sharper structures while values close to the beam blanking speed (0.1 μs) produce fuzziness and drag efects. he possible reason is that longer dwell times allow to mill well-dei ned grooves in the irst frames, and these induce a channeling efect on the beam, helping the overall cut sharpness. Beam overlap is deined as the crossing fraction between two adjacent spots: the higher it is, the more continuous is the beam scanning, and according to the relative magnitude between spot size and pixel separation, which depends on the magniication, this may have an inluence on the structure resolution. he aspect ratio (height/width) of structures fabricated by FIB milling is not arbitrary. In the case of “negative” processing, like milling a hole, the ratio is limited to 3–5:1 by the ejection of the sputtered material, which cannot escape from the hole beyond a certain depth and is redeposited at the sidewalls. For “positive” processing, as the milling depth increases, there is a progressive rounding of the top edges of the structure, due to beam tails erosion, and this eventually turns into a lowering of the structure. Ion milling can be gas-assisted to enhance the removal rates of a speciic element selectively. he gas is chosen so that it forms a volatile compound with the sputtered atoms: halogens (I2, Cl2) for removing metals, silicon, and GaAs, XeF2 for silicon and silicon dioxide, and H2O for carbon. Gas processing eliminates redeposition and gives cleaner structures, but it also enhances unwanted efects like the beam tail erosion. 26.3.2.3.2 Nanofabrication by Ion Irradiation Nanofabrication by ion irradiation is performed at much lower ion doses (1013–1015 ions/cm2) than those employed for milling and it is based either on the structural disorder produced by the collisional cascade or on the change in material composition. Since the aim is to locally alter the material properties, minimizing the sputtering efect, light primary ions are preferable for this process. In crystalline semiconductor materials, the lattice disorder induced by ion irradiation (amorphization) lowers the material density, and amorphous regions, laterally coni ned by the higher density crystalline material, are pushed up producing a surface swelling efect (Gazzadi et al. 2005). In this way, a topographical nanostructuring can be achieved. Structural disorder generally worsens the electrical transport properties and localized ion irradiation has oten been employed to draw blocking patterns to electrical conduction. Compositional change has been exploited in the patterning of magnetic thin i lms. A sequence of ultrathin magnetic layers, crossed by a light ion beam, are subject to local atomic mixing at

the i lms’ interface, and this may generate a new phase with different magnetic properties (e.g., diferent magnitude or orientation of the magnetization) (Chappert et al. 1998). Other examples of patterning can be achieved by local Ga ion implantation. Ga-implanted silicon is resistant to KOH anisotropic etching; thus, FIB irradiation can be exploited to perform nanostructuring through selective etching (Xu and Steckl 1994). Another method is to employ Ga-implanted nanoareas as templates for the localized growth of Ga-based nanodots (InGaN (Lachab et al. 2000), GaN (Gierak et al. 2004)). 26.3.2.3.3 Nanofabrication by Ion-Induced Deposition Ion beam–induced deposition (Utke et al. 2008) is a high-resolution direct additive lithography commonly employed in the microelectronics industry for device failure analysis and photomask defects repair. In recent years, this technique and its electron-beam analogue, the electron beam–induced deposition (EBID), have been extended to nanoscience and nanotechnology applications, including electrical and mechanical connections at the nanoscale (e.g., on nanotubes), the fabrication of nanotips for scanning probe microscopes, and the fabrication of electronic and photonic nanodevices. he deposition of laterally conined nanostructures has been explored especially with EBID, as focused electron beams ofer a higher lateral resolution than FIBs. A strong efort has been made to improve the minimum size (1–10 nm can be achieved) and the purity of metallic deposits, in particular, which are afected by the high content of organic species (C, O) present in the precursor molecule. he IBID approach is less resolved (50–100 nm minimum size) but gives higher metallic content as the shallower ion–solid interactions are more eicient in decomposing the molecules adsorbed on the substrate. On the other hand, the deposit contains the ion species implanted during the deposition process. he IBID process is in competition with sputtering erosion, which is always present whenever an ion hits; therefore, a delicate balance exists between the molecular and ion luxes in order to maximize deposition over erosion. Typical values at room temperature for 30 keV Ga FIB are of 2–8 pA/μm2 for 30 keV Ga ions and gas precursor pressure of 10 −5–10−6 torr.

26.4 Critical Discussion of Selected Applications 26.4.1 Magnetocrystalline and Conigurational Anisotropies in Fe Nanostructures A key issue in data storage technology is to control the magnetic switching of small magnetic elements. Many properties of such systems come about by imposing a geometric shape on the magnet. For instance, the magnetostatic energy associated to the lateral coninement is known to induce a dependence of the magnet free energy on the magnetization direction (shape magnetic anisotropy). In symmetric elements, as square magnets, the free energy of a uniformly magnetized square element do not depend on the magnetization direction due to the prefect

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Handbook of Nanophysics: Principles and Methods

balance of the surface magnetic charges that forms at the magnet boundaries. his means that the shape anisotropy (cf. Section 26.3.1.6) for square elements is zero. However, the uniform magnetization state cannot be set up in non-ellipsoidal magnets and at any inite applied ield the actual magnetic coniguration will deviate from the uniform magnetization state. As a consequence, the perfect balance of the surface magnetic charges does not take place and an anisotropic energy contribution, called conigurational anisotropy, sets up (Cowburn et al. 1998; Cowburn and Welland 1998a,b), which may compete with other anisotropies such as the magnetocrystalline anisotropy. Since the magnetic properties of a magnet depend critically on anisotropy, an understanding of the overall anisotropy in nanomagnets is therefore essential, especially for technological applications. hese efects have been studied on a set of arrays of singlecrystal Fe micron and submicron elements on MgO (Vavassori et al. 2005a,b). hey have been fabricated by FIB and they have been magnetically characterized by means of magneto-optical Kerr efect magnetometry (MOKE) (Bader 1991; Vavassori 2000). he anisotropy ield (cfr. Section 26.3.1.5) of the i lm has been measured by modulated ield magneto-optical anisometry (MFMA) (Cowburn et al. 1997). In detail, an epitaxial, 10 nm thick Fe i lm on MgO(00 1) single crystal has been grown, which has shown a good crystalline quality with its (100) axis parallel to the (110) direction of the substrate. To avoid oxidation, the i lm has been capped with a 10 nm MgO i lm. FIB has been subsequently used to remove portions of the bilayer to produce diferent arrays of nanostructures. he main advantage of the FIB technique is the ability to sculpt nanostructures of arbitrary shape starting from high-quality single-crystal i lms with elevated spatial resolution (down to 20 nm). Figure 26.11 shows scanning electron microscopy (SEM) images of three samples. he inter-element distance is large enough such that any magnetostatic interactions between nanomagnets is negligible if compared to any other energy contribution. he MFMA characterization of the Fe continuous ilm shows that the ilm has a cubic magnetocrystalline anisotropy, with anisotropy ield Ha = 2K1/Ms of about 560 Oe, where K1 is the irst-order Pattern 1

cubic anisotropy constant and Ms is the saturation magnetization. Assuming a value of 1.7 . 106 A/m for Ms, this corresponds to an anisotropy constant of 4.8 . 104 J/m3, in good agreement with that of the Fe bulk. Out-of-plane component of the magnetization has not been found, as expected for thin ilms (cf. Section 26.3.1.6). he easy and hard axis MOKE loops of the continuous Fe ilm are shown on the let-hand side of Figure 26.12. he small coercive ield (≈20 Oe to be compared to Ha) indicates that the magnetization reversal is determined by nucleation and expansion of reversed domains. he orientation of the ilm’s easy axes with respect to the patterned structures is shown by the white arrows in the SEM image of Figure 26.11. he square elements have been oriented to have their diagonals parallel to the ilm easy axes. At irst order, the conigurational anisotropy in square nanomagnets was found to have an in-plane fourfold symmetry with easy directions along the square diagonals (Cowburn and Welland 1998b). he easy axes directions of conigurational anisotropy being coincident with those of intrinsic magnetocrystalline anisotropy, the symmetry of the overall anisotropy of the square nanomagnets should be the same as in the continuous ilm. he same symmetry is expected for the circular nanomagnets of pattern 3 in this case because the magnetic in-plane conigurations are energetically isotropic, as conirmed by the hysteresis loops shown on the right-hand side of Figure 26.12. he main efect introduced by the FIB patterning is visible in the corresponding hysteresis loops. hey are very diferent compared to the continuous ilm for what concerns shape and coercive ield. hese diferences are due to the lateral coni nement, which hinders domain formation during magnetization reversal. As a result, the nucleation of magnetization reversal is retarded, the coercive ield increased, and the magnetization switching takes place more gradually.

26.4.2 Ion Irradiation In addition to deining the geometry of the data bits, most of the fabrication techniques change the surface topography of the magnetic media. In order to preserve the surface latness of the medium (a major prerequisite for high-density information storage

Pattern 2

Pattern 3

EA

18 × 18 μm2 (a)

12 × 12 μm2 (b)

18 × 18 μm2 (c)

FIGURE 26.11 Scanning electron microscope images of portions of arrays. he arrows indicate the direction of the i lm magnetocrystalline anisotropy easy axes. Pattern 1 is an array (pitch of 2 μm) of square elements of 1 μm side; in pattern 2, the lateral size of the square elements is 500 nm; pattern 3 is an array of circular elements of 1 μm diameter. (Reprinted from Vavassori, P. et al., J. Magn. Magn. Mater., 290, 183, 2005b. With permission.)

26-17

Laterally Coni ned Magnetic Nanometric Structures Film Easy axis

1.0

1.0

M/Msat

0.5

0.0 H

–0.5

–0.5

–1.0

–1.0

–400

M/Msat

–200

0

200

400

Hard axis

–400 1.0

0.5

0.5

0.0

0.0

–200

0

200

400

#1 #2 #3

H –0.5

–0.5

–1.0

–1.0

–1000 (a)

#1 #2 #3

0.5

0.0

1.0

Patterns

1.5

–500

0 500 Field (Oe)

1000

–1000 (b)

–500

0 500 Field (Oe)

1000

FIGURE 26.12 (a) MOKE hard and easy axis hysteresis loops of Fe i lm. (b) MOKE loops measured in the patterned areas, applying the ield along the same direction as for the continuous i lm. (Reprinted from Vavassori, P. et al., J. Magn. Magn. Mater., 290, 183, 2005b. With permission.)

nanotechnologies) and to avoid detrimental efects due to the worsening of surface quality, 2D magnetic patterns in continuous ilms were produced by exploiting ion irradiation to induce local modiications like intermixing, changes in crystallinity, chemical composition, and strain. Several investigations have been performed on Co/Pt and Fe/Pt multilayers (Blon et al. 2004). Two main efects are produced by ion irradiation of these multilayers: alloying of the two elements resulting in the modiication of the magnetic state (from ferromagnetic to paramagnetic) and intermixing at interfaces resulting in the modiication of the magnetic anisotropy (from perpendicular to parallel). Magnetic properties of Pt/Co/Pt sandwiches or (Pt/Co)n/Pt multilayers (that are ferromagnetic at RT and have a perpendicular easy magnetization axis) were tailored without afecting their surface roughness by combining ion irradiation with standard electron-beam lithography (Chappert et al. 1998). Electron beam lithography was used to prepare a suitable mask on the surface of the sputter-deposited metal i lms. Irradiation was performed using a 30 keV He+ ion beam with an increasing luence up to 1016 ions/cm2. he ion range into the sample is much higher than the metal layer thickness so that all ions are implanted in the substrate, but their energy is mainly deposited just in correspondence to the multilayers. he structural origin of the magnetic changes was investigated by dif raction methods and ascribed

to progressive modiications of the Co atoms environment near the Pt/Co interfaces due to the elastic collisions induced by ion irradiation. Under these speciic irradiation conditions, the displacement of atoms at the Pt/Co interfaces is very low (typically a few interatomic distances), and they can relax to a stable position whose local surroundings difer from their initial one. he composition modulation in the growth direction is increasingly reduced (Figure 26.13). Interfacial Co atoms have a high Increasing ion dose

Pt/Co multilayer

Pt substrate

FIGURE 26.13 Progressive mixing of Pt/Co multilayer by increasing ion dose.

M/Ms

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Handbook of Nanophysics: Principles and Methods

1.0 0.8 0.6 0.4 0.2 0.0 –0.2 –0.4 –0.6 –0.8 –1.0

Non irradiated 5.1014 ions/cm2 1015 ions/cm2

5.1015 ions/cm2

–1500

–1000

–500

0 H (G)

500

1000

1500

FIGURE 26.14 Room temperature polar MOKE hysteresis loops obtained on Pt–Co (1 nm) Pt ater irradiation with diferent N+ ion luences (indicated in ions/cm2). (Reprinted from Blon, T. et al., J. Magn. Magn. Mater., 272, E803, 2004. With permission.)

probability to experience a more Pt-rich environment, resulting in weaker magnetic character of the whole system in the irradiated region. In particular, very thin Co-layer samples (≤0.5 nm) essentially comprise only interfaces, so that almost all the Co atoms are involved. he overall result is a progressive lowering of the magnetic anisotropy energy, a reduction of the coercive force (Figure 26.14), and then a change of the magnetization axis from perpendicular to in-plane. he total magnetization is not afected, until for higher irradiation luences the i lms become paramagnetic at RT. A crucial feature of the method is the low density of displaced atoms provided by light ion irradiation. No evidence of irradiation-induced surface roughness was found by atomic force microscopy (AFM) measurements. On thicker i lms, attempts were made to chemically order alloys while not changing their microstructure (Devolder et al. 2001). Room temperature–prepared FePt alloy ilms show no chemical order, and post-annealing at 700°C is necessary to induce the appearance of an ordered phase, i.e., a stacking of Pt and Fe atomic planes. It is worth noticing that in FePt the direction and the intensity of the magnetocrystalline anisotropy are very sensitive to structural order and crystallographic orientation. herefore, it appears to be the ideal candidate for the realization of smooth and continuous patterned perpendicular systems by locally modifying the degree of structural order by ion irradiation. Atomic displacement induced by irradiation with 130 keV He+ ions was found to favor chemical order in the FePt disordered structure, triggering and controlling the ordering process at temperatures well below the standard ones. Diferent conditions of ion irradiation were found on the contrary to destroy chemical order in FePt structures previously ordered by annealing at suitable temperatures (Albertini et al. 2008). To obtain 2D patterns of perpendicular magnetic structures based on FePt thin ilms, by controlling coercivity and direction of magnetization (i.e., out-of-plane versus in-plane), maskless Ga+ irradiation with FIB has been used. hin ilms of thickness 10 nm were grown on MgO. Morphological characterization was performed by atomic force microscopy (AFM). Magneto-optical Kerr efect (MOKE)

magnetometry was used to characterize the magnetic properties. Magnetic force microscopy was performed to characterize magnetic domain structure. It has been shown that continuous ilms with high anisotropy can be obtained. he continuous morphology also allows the presence of continuous domain patterns. hin ilms were subsequently processed by 30 keV Ga+ irradiation with doses up to 4 . 1016 ions/cm2, to study in detail the efects of diferent Ga+ doses on structure, morphology, and magnetism. he lowest efective dose for which the complete disordering takes place was found to be 1 . 1014 ions/cm2. Disordering eliminates the perpendicular magnetocrystalline anisotropy that arises from the ordered structure. As a consequence, the perpendicular coercivity dramatically drops, leading to a change of easy magnetization direction from perpendicular to in-plane. At the lowest efective dose for a complete disordering of structure, the morphology was found not to be signiicantly afected by ion irradiation. Just a small enlargement of grains has been observed, accompanied by an increase of the surface roughness. he efects of surface erosion become pronounced ater irradiation with 2 . 1016 ions/cm2. By using the lowest efective dose of 1 . 1014 ions/cm2 2D continuous patterns were fabricated, e.g., by alternating irradiated and nonirradiated stripes with lateral size of 1 μm. Other patterns consisted of nonirradiated dots (1 μm and 250 nm in diameter) arranged in square array with period twice their diameter, surrounded by an irradiated matrix. Due to the preservation of surface quality ater irradiation, the AFM measurements are practically insensitive to ion irradiation. On the other hand, MFM, performed with a tip magnetized perpendicularly to the i lm is sensitive to the perpendicular stray ield gradients emanating from the sample and consequently to the magnetic patterns (Porthun et al. 1998). MFM large-scale images show hard and sot zones corresponding respectively to perpendicular and parallel magnetization directions. At a lower scale, it is possible to analyze the domain structure of patterned samples (Figure 26.15a). he 1 μm-diameter nonirradiated dots in an irradiated matrix show a bi-domain structure, diferent from the continuous i lm, with concentric magnetic domains relecting the shape

(a)

(b)

FIGURE 26.15 (a) MFM image of 2D patterned FePt ilms of 1 μm-diameter unirradiated dots in an irradiated matrix (dose = 1 × 1014 ions/cm2) showing concentric perpendicular magnetic domains. (b) Same as (a), but the diameter of the unirradiated areas is reduced to 250 nm. (Reprinted from Albertini, F. et al., J. Appl. Phys., 104, 053907, 2008. With permission.)

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Laterally Coni ned Magnetic Nanometric Structures

of the dot (Ha et al. 2003; Komineas et al. 2005) while the 250 nm dots appear as single-domain structures (Figure 26.15b).

26.4.3 High-Density Magnetic Media Patterned by FIB One approach to achieve magnetic storage densities of the order of 1 Tb/in.2 is the use of patterned magnetic media (Ross 2001; Lodder 2004; Terris and homson 2005; Terris et al. 2007). As magnetic grain sizes in conventional media are reduced, the magnetic energy per grain becomes too small to prevent thermally activated reversals. h is is the so-called superparamagnetic limit (cf. Section 26.3.1.5). A typical requirement for hard disk storage is a data retention interval of 10 years. In order to avoid thermally activated reversal during such an interval, the value of K1V/k BT (see Equation 26.8) must remain greater than ∼35 for monodispersed grain size distribution, and shit s to about 60 if grain size dispersion is taken into account (Weller and Moser 1999). To maintain suicient signal-to-noise ratio, it is desirable to maintain the number of grains per bit as the density is increased. hus, the grain volume must be reduced. However, K1 cannot be increased without bound in order to maintain K1V, as the required magnetic ield to write a bit, called the anisotropy ield (see Equation 26.7) increases with K1. Nowadays, the write ield is limited to ∼10 kOe. h is limits the diameter of thermally stable grains which can be written to around 8 nm (Moser and Weller 2001). For discrete bit media, the signal-to-noise ratio argument is diferent. In this case, the number of grains, or more correctly the number of magnetic switching volumes per bit is reduced to 1, and there is no statistical averaging over many grains to reduce noise. he switching volume is now dei ned by the disk patterning and not by the ield generated by the write head and thus islands as small as 10 nm and below will be thermally stable and still writeable with current recording heads. he linear density of the bits will be limited by the media thickness in order to prevent the head from unintentionally writing neighboring islands with the tails of the head ield gradient. he taller the pillar, the greater the head ield a neighboring bit will experience, and hence the (a) AFM

(b) MFM

more likely it is to be inadvertently written. hus, media with a thickness on the order of the bit spacing will be required. he symmetry of hard disk recording favors media with perpendicular anisotropy, as higher head write ields can be realized. hus, given the media thickness limitation, we conclude that it will be diicult to use tall pillars for high-density recording. h is implies that the shape anisotropy cannot be used to achieve the necessary perpendicular anisotropy. he most likely perpendicular media are based on using interfacial anisotropy, such as Co/Pt or Co/Pd multilayers, or media similar to that proposed for perpendicular recording based on CoPtCr alloys grown with the c-axis normal to the substrate (Albrecht et al. 2002). To achieve single-domain islands, it will be desirable to have high exchange coupling within the individual islands, rather than the low exchange desired in conventional magnetic recording. In order to assess the potential of patterned media, prototype nanometer-scale magnetic structures were made by patterning a layer of Co70Cr18Pt12 perpendicular medium using a FIB of Ga+ from an FEI 830XL dual-beam instrument (Albrecht et al. 2002). he magnetic ilm was protected by 5 nm of CNx. Patterns were cut by scanning the beam using beam currents of ≈1 pA. While the cut depth of 6 ± 2 nm is only slightly deeper than the 5 nm overcoat, the 30 keV Ga+ penetrates the full 20 nm depth of the media, even with an intact overcoat (Rettner et al. 2001). We conclude that the magnetic isolation is caused by a combination of media removal and disruption associated with collision cascades, with an additional contribution from the Ga and C implantation. Whatever the mechanism, the dose required for full isolation is about 0.03 nC/μm2. An array of uniform square islands with a period of p = 103 nm corresponding to a lateral island size of about 80 nm was fabricated over a 2 × 4 μm area. A qualitative comparison between the decay of a patterned structure and a continuous media of the same composition is shown in Figure 26.16 (Albrecht et al. 2002). Figure 26.16a shows an AFM image with Figure 26.16b the corresponding magnetic force microscopy (MFM) image for a section of a patterned structure (top), and area of continuous media (bottom) ater applying a saturating ield of 20 kOe and aging it for 5 × 105 s at room (c) MFM

(d) MFM

500 nm

500 nm

FIGURE 26.16 (a) AFM and (b) MFM images of patterned (top) and unpatterned (bottom) Co70Cr18Pt12 perpendicular media ater saturation and aging of the sample at room temperature for 5 × 105 s. All islands are in the original magnetized state (dark) while some areas of the unpatterned media have reversed the magnetization and appear bright. (c) MFM image of in-phase written island array with 103 nm pitch. A square wave pattern with a linear density of 9996 ield changes per mm and a write current of 8 mA was applied. (d) AFM image of the topographic pattern. (Reprinted from Albrecht, M. et al., J. Appl. Phys., 91, 6845, 2002. With permission.)

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Handbook of Nanophysics: Principles and Methods

temperature in zero ield. In the original state, the islands and media appear dark in the MFM image. It is clear that ater aging, all islands have retained their original state of magnetization while the continuous ilm shows obvious decay with many local reversals of the magnetization, shown as white on the image. A total of 800 islands were monitored during the course of the experiment and out of this total not a single island reversal event was recorded. he demagnetizing ield Hd plays an important role in the time decay of fully magnetized perpendicular media. For a fully magnetized ilm, Hd can be estimated from (26.14) and results 5.7 kOe for this medium. his substantial demagnetizing ield contributes to a relatively fast decay of the continuous ilm. In the case of islands of 80 × 80 × 20 nm in size, the demagnetizing ield is reduced substantially to ≈0.70 (approximating the island to an oblate ellipsoid) of the value for the continuous ilm. his reduction leads to stability enhancement. In addition, the inability of islands below 130 nm to support domain walls (Lohau et al. 2001) may act as a further impediment to decay, since a reversal event must nucleate the switching of an entire island. Writing and reading experiments on the patterned islands were performed using a read/write tester (Moser et al. 1999). Since the width of the write and read elements of the head (2 and 0.8 μm, respectively) were larger than the island size, the

patterned media were addressed in columns of 20 islands. Figure 26.16c through d show AFM and MFM images of a typical island array with a period of 103 nm. In order to obtain the magnetic pattern shown in the MFM image of Figure 26.16d, a square wave bit pattern was written at a linear density of 9666 ield changes per mm to match the island periodicity, reversing the write ield when the head is over a trench and so adjacent columns are magnetized in opposite directions. he written pattern corresponds to an areal density of about 60 Gbit/in.2.

26.4.4 Sculpting by Broad Ion Beams Nanostructuring of magnetic thin ilms is also performed by ion sculpting with low-energy and broad ion beams. On epitaxial i lms grown on crystalline surfaces, the interplay between the angular dependence of the sputtering yield and the energy barriers experienced by displaced atoms, dif using at the step edges, builds up regular patterns of nano-ripples along speciic directions. Height, lateral distance, and order of these structures can be tailored with ion irradiation parameters like ion energy, dose, incident angle, and substrate temperature. U. Valbusa and coworkers (Moroni et al. 2003) have investigated the magnetic properties of Co/Cu(100) i lms (Figure 26.17a) bombarded with Hc Kerr signal (arb. units)

H // [110]

H // [1–10]

] 10

[1–

0]

[11

20 nm

(a)

(b)

Hs H // [1–10] [1–10]

Hs2 [110]

Hs1

20 nm –500

(c)

Kerr signal (arb. units)

H // [110]

(d)

–250

0 250 H (Oe)

500

FIGURE 26.17 (a) STM image and (b) hysteresis curves of the lat 12 MLE thick Co/Cu(001) i lm. (c) STM image and (d) hysteresis curves of the Co i lm ater nanostructuring with an ion dose of about 12 MLE. he arrow indicates the projection on the surface plane of the ion beam direction. (Reprinted from Moroni, R. et al., Phys. Rev. Lett., 91, 167207, 2003. With permission.)

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Laterally Coni ned Magnetic Nanometric Structures

grazing-incidence (70°), low-energy (1 keV) Ar ions, impinging along the [110] surface direction (Figure 26.17c). he formation of ripples oriented along the beam incidence direction, with a periodicity in the 10 nm range, is evident. As the ion dose increases, the i lm is progressively eroded and Co remains only on the ripples’ crest, producing parallel Co nanowires. he magnetic properties, studied with MOKE, show a dramatic change in the symmetry of the in-plane magnetic signal. he as-deposited i lm has two equivalent easy axes (Figure 26.17b), deriving from the square-symmetry of the Co surface cell, while the rippled i lm displays a strong uniaxial anisotropy, dictated by the nanopattern symmetry (Figure 26.17d). he ripple axis behaves as an easy axis, similarly to the pristine i lm, while applying the ield perpendicularly to the ripple axis gives a hysteresis curve split into two opposite loops. he loops are separated by a wide region around the origin where the magnetic signal is zero because in-plane magnetization is pinned along the ripple axis. herefore, ion-patterned nanoripples introduce a strong uniaxial anisotropy.

26.4.5 Beam-Induced Deposition In this section, we cover examples of localized deposition of magnetic materials performed with both the ion and electron beam–induced depositions. IBID of laterally conined magnetic nanostructures stems from the quest for patterned magnetic media, where magnetic bits are stored on arrays of physically separated elements. A systematic approach has been undertaken

by T. Suzuki and coworkers (Pogoryelov and Suzuki 2007). hey irst investigated the deposition of micron-size (2 μm in diameter) and nano-size (150 nm in diameter) Co dots, deposited from Co-carbonyl precursor with a Ga FIB. Magnetic characterization of the micron dots by alternated-gradient force microscopy (AGFM) showed weak ferromagnetic behavior with coercive ields of 100 Oe and saturation magnetization of 1000 emu/cm3 in both the perpendicular and the in-plane magnetic ield conigurations. Nanosized dots were investigated only qualitatively with TEM Lorentz microscopy: image contrast suggested single-domain structures with in-plane magnetization. In a subsequent study (Xu et al. 2005), they performed a thorough characterization of CoPt and FePt micron-size dots, obtained from co-injection of Pt and Fe or Co precursors. Structure of the dots changed from amorphous to crystalline fcc periodicity upon annealing at 600°C; the CoPt dots displayed higher order than the FePt dots. MFM measurements on the annealed samples, polarized with a perpendicular magnetic ield (20 kOe), are shown in Figure 26.18 (Xu et al. 2005). hey reveal a concentric ring–domain pattern, particularly evident for the FePt dots, ascribed to shape anisotropy. Magnetic contrast for the CoPt dots is higher and more uniform. Contrast reversal upon reversing the magnetic ield direction is observed in both cases. Continuing with the co-deposition approach, they studied micron and submicron FeCoPt dots, inding similar features as for the other deposits: weak ferromagnetism (110 Oe coercive ield) and ring-domain patterns. hese works indicate that IBID of magnetic materials is well feasible at the micron scale while going to the nanoscale requires some reinement.

2 μm

+H

(a)

–H

(b)

+H

(c)

–H

(d)

FIGURE 26.18 he remnant magnetic domain patterns taken by MFM ater applying a 20 kOe magnetic ield perpendicular to Si3N4 substrate with opposite directions. (a) and (b) are FePt particles annealed at 600°C for 25 h and (c) and (d) are CoPt particles annealed at 600°C for 1 h. (Reprinted from Xu, Q.Y. et al., J. Appl. Phys., 97, 10K308, 2005. With permission.)

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Handbook of Nanophysics: Principles and Methods

Tip

39.2 nm

Cap coating

44.7 nm Shank

300 nm (a)

51.9 nm 100 nm (b)

2 μm (c)

FIGURE 26.19 Magnetic tip grown on a Si AFM tip by Co EBID. (a) Tip diameter is 70 nm, shank diameter is 160 nm, and tip height is 1.7 μm. (b) he tip ater magnetic cap coating by Co EBID; tip diameter improves to 50 nm. (c) MFM image of magnetic disk tracks taken with the tip in (b): track spacing down to 51.9 nm is resolved. (Reprinted from Utke, I. et al., Appl. Phys. Lett., 80, 4792, 2002. With permission.)

Interesting cases of beam-induced deposition of magnetic materials can be found in the EBID literature. In one example, a magnetic “supertip” for improved MFM resolution was fabricated by depositing a Co pillar at the apex of an AFM tip (Utke et al. 2002). Deposition was obtained by focusing a 25 keV, 100 pA electron beam on the tip apex for 2 min, under Co-carbonyl precursor lux. he resulting pillar, shown in Figure 26.19a, has a high aspect ratio (∼10) and a small curvature radius (35 nm). he tip was then overcoated with Co, with the same EBID procedure (Figure 26.19b), and i nally tested on hard disk tracks with decreasing spacing. As shown in Figure 26.19c, the alternately magnetized tracks, appearing as black and white stripes, are resolvable down to a size of 51.9 nm. Always based on EBID of Co-carbonyl is the fabrication of a Hall efect magnetic sensor with an active area of 500 nm2, realized by deposition of submicron crossing lines (Boero et al. 2005).

26.5 Outlook Moving into the twenty-irst century, emerging opportunities and exciting challenges can be envisaged in the ield of laterally conined magnetic nanostructures. We foresee that the following directions will likely focus the interest for research and technology. On the side of fabrication improvements, better dei nition of small structures using advanced photolithographies and electron/ion focused beam techniques is a real challenge. With this respect, the Achilles’ heel of the FIB is that the gallium beam inevitably damages the surface of any milled or imaged sample. he damage consists of both gallium implantation and amorphization. his can be ameliorated by using low beam currents (at a cost of longer milling times) and/or low voltages (at a cost of worse imaging contrast). A much more powerful technique is under study to mill nanoscale features using the conventional FIB and then “polish” the sample using a broad-beam argon ion miller where the ion energy can be reduced to as low as 30 eV, so as to gently remove the gallium-implanted and amorphized layer. his would greatly reduce the depth of damage done to the sample. Problems also arise when positive ions are used for micromachining insulating materials or multilayers including

insulating layers. he target material is charged by the positive ions; as the positive charge builds up on the sample, it repels the ions and defocuses the beam. New systems are under study that uses, instead of the LMIS standard in many FIB devices, a plasma generated by radio-frequency electromagnetic ields, which separate gas molecules into their component electrons and positive ions. An ion beam and an electron beam are formed and accelerated by a suitable arrangement of electrodes. Both beams combine in a single, self-neutralizing mixed beam and are extracted by the accelerator column. Parallel to FIB development is the continuous expansion of the family of self-assembling methods, e.g., from molecular precursor building blocks, that encompasses the domains of physics, chemistry, and biology. In this context, it is important to mention the increasing amount of fabrication techniques based on chemical synthesis methods that are very promising for production on a large and quick scale. Molecular magnets are a relevant example of this approach to magnetic nanofabrication. hey consist of large-scale molecular structures where the magnetism is conined within discrete clusters within the unit cell. Most elegant in the regime of artiicial structuring is the atom-by-atom assembly made possible by STM manipulation of individual atoms to “design” speciic structures at the ultimate limits of miniaturization. Since the dimensions of magnetic objects are being made smaller and smaller, magnetic imaging with atomic resolution is desirable. Scanning tunneling microscopy (STM) holds the most promise to solve this problem. In STM, a sharp tip scans across the surface and the tunneling current from the (into the) sample is recorded, enabling topographic images to be recorded with atomic spatial resolution. Spin-polarized scanning tunneling microscopy (SPSTM) is highly expected to show similar capability. he operating principle of SPSTM is close to that of the STM, but the spin-polarized component of the tunneling component is recorded in this case. he major challenge for developing the SPSTM lies with the very small signal, because the spin-polarized tunneling current is usually several percent or less of the total tunneling current. Synchrotron techniques are increasingly emerging as powerful probes of surface magnetism. Photoelectron emission

Laterally Coni ned Magnetic Nanometric Structures

microscopy, where magnetic dichroism with electron yield detection is the method for generating the magnetic contrast at the surface, and spin-polarized photoemission, both beneit from the photon brightness available at third-generation synchrotron facilities. Other areas of expanding interest refer to materials and phenomena. As the regime of lateral coninement becomes prime territory for the exploration of new properties, the steps and edges that surround the conined regions might be anticipated to play an important role. Atoms located in sites of reduced coordination (including surface atoms) become in fact a relevant fraction of the total number of atoms and their speciic contribution, diferent from the contribution of “bulk,” and fully coordinated atoms signiicantly inluence the properties of nano-objects. Recently, it has been demonstrated that a spin-current lowing directly through a nanomagnet can switch its magnetization direction by a mechanism called spin transfer. Spin transfer relies on a strong, short-range interaction between a spin current and the background magnetization of a nanomagnet. Spin transfer– induced switching, therefore, has important advantages over ield induced switching and will likely form the basis for a new generation of magnetic devices called spintronic devices. he ield of spintronics has been growing dramatically in recent years. Besides the understanding of the intrinsic, individual properties of laterally conined magnetic nanostructures, it is also crucial to achieve a good understanding of their collective properties as they are assembled in ordered or disordered arrays. When the distance between the nano-elements becomes small enough, important interaction efects mainly due to dipolar ields are in fact observable, like changes in coercivity, presence of additional anisotropies, and modiication of the magnetization dynamic. Interaction efects between nanostructures of magnetic materials and other systems are also of emerging interest. h is includes the creation of new pathways not only to create new materials and discover new properties and phenomena but also to inalize this “body of competences” to address society issues, enabling new approaches to energy production and storage, healthcare, homeland security, etc.

References Albertini, F., L. Nasi, F. Casoli et al. 2008. Local modiications of magnetism and structure in FePt (001) epitaxial thin ilms by focused ion beam: Two-dimensional perpendicular patterns. Journal of Applied Physics 104: 053907. Albrecht, M., S. Anders, T. homson et al. 2002. hermal stability and recording properties of sub-100 nm patterned CoCrPt perpendicular media. Journal of Applied Physics 91: 6845–6847. Alders, D., L. H. Tjeng, F. C. Voogt et al. 1998. Temperature and thickness dependence of magnetic moments in NiO epitaxial ilms. Physical Review B 57: 11623–11631. Bader, S. D. 1991. SMOKE. Journal of Magnetism and Magnetic Materials 100: 440–454. Bader, S. D. 2002. Magnetism in low dimensionality. Surface Science 500: 172–188.

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Baibich, M. N., J. M. Broto, A. Fert et al. 1988. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Physical Review Letters 61: 2472–2475. Blon, T., D. Chassaing, G. Ben Assayag et al. 2004. Efects of ion irradiation on cobalt thin ilms magnetic anisotropy. Journal of Magnetism and Magnetic Materials 272: E803–E805. Boero, G., I. Utke, T. Bret et al. 2005. Submicrometer Hall devices fabricated by focused electron-beam-induced deposition. Applied Physics Letters 86: 042503. Brug, J. A., L. Tran, M. Bhattacharyya, J. H. Nickel, T. C. Anthony, and A. Jander 1996. Impact of new magnetoresistive materials on magnetic recording heads. Journal of Applied Physics 79: 4491–4495. Carl, A. and E. F. Wassermann 2002. Magnetic structures for future magnetic data storage: Fabrication and quantitative characterization by magnetic force Microscopy. In Magnetic nanostructures, Ed. H. S. Nalwa, Los Angeles, CA: American Scientiic Publishers. Chappert, C., H. Bernas, J. Ferre et al. 1998. Planar patterned magnetic media obtained by ion irradiation. Science 280: 1919–1922. Chou, S. Y. 1997. Patterned magnetic nanostructures and quantized magnetic disks. Proceedings of the IEEE 85: 652–671. Cowburn, R. P. and M. E. Welland 1998a. Micromagnetics of the single-domain state of square ferromagnetic nanostructures. Physical Review B 58: 9217–9226. Cowburn, R. P. and M. E. Welland 1998b. Phase transitions in planar magnetic nanostructures. Applied Physics Letters 72: 2041–2043. Cowburn, R. P. and M. E. Welland 2000. Room temperature magnetic quantum cellular automata. Science 287: 1466–1468. Cowburn, R. P., A. Ercole, S. J. Gray, and J. A. C. Bland 1997. A new technique for measuring magnetic anisotropies in thin and ultrathin ilms by magneto-optics. Journal of Applied Physics 81: 6879–6883. Cowburn, R. P., A. O. Adeyeye, and M. E. Welland 1998. Conigurational anisotropy in nanomagnets. Physical Review Letters 81: 5414–5417. Daughton, J. M. 1999. GMR applications. Journal of Magnetism and Magnetic Materials 192: 334–342. Devolder, T., H. Bernas, D. Ravelosona et al. 2001. Beam-induced magnetic property modiications: Basics, nanostructure fabrication and potential applications. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 175: 375–381. Farhoud, M., H. I. Smith, M. Hwang, and C. A. Ross 2000. he efect of aspect ratio on the magnetic anisotropy of particle arrays. Journal of Applied Physics 87: 5120–5122. Fischer, P. B. and S. Y. Chou 1993. 10-nm electron-beam lithography and sub-50-nm overlay using a modiied scanning electron-microscope. Applied Physics Letters 62: 2989–2991. Fisher, K. D. and C. S. Modlin 1996. Signal processing for 10 GB/ in(2) magnetic disk recording and beyond. Journal of Applied Physics 79: 4502–4507.

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Gazzadi, G. C., P. Luches, S. F. Contri, A. di Bona, and S. Valeri 2005. Submicron-scale patterns on ferromagneticantiferromagnetic Fe/NiO layers by focused ion beam (FIB) milling. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 230: 512–517. Giannuzzi, L. A. and F. A. Stevie 2005. Introduction to Focused Ion Beams: Instrumentation, heory, Techniques, and Practice. New York: Springer. Gierak, J., E. Bourhis, R. Jede, L. Bruchhaus, B. Beaumont, and P. Gibart 2004. FIB technology applied to the improvement of the crystal quality of GaN and to the fabrication of organised arrays of quantum dots. Microelectronic Engineering 73–74: 610–614. Grutter, P., H. J. Mamin, and D. Rugar 1992. Scanning tunneling microscopy II: Further applications and related scanning techniques. In Springer Series in Surface Sciences 28, (Eds.) R. Wiesendanger and H. J. Güntherodt, pp. 151–207. Berlin, Germany; New York: Springer-Verlag. Ha, J. K., R. Hertel, and J. Kirschner 2003. Concentric domains in patterned thin ilms with perpendicular magnetic anisotropy. Europhysics Letters 64: 810–815. Hamaguchi, T., M. Mochizuki, T. Matsui, and R. Wood 2007. Perpendicular magnetic recording integration and robust design. IEEE Transactions on Magnetics 43: 704. Kirk, K. J., M. R. Scheinfein, J. N. Chapman et al. 2001. Role of vortices in magnetization reversal of rectangular NiFe elements. Journal of Physics D-Applied Physics 34: 160–166. Komineas, S., C. A. F. Vaz, J. A. C. Bland, and N. Papanicolaou 2005. Bubble domains in disc-shaped ferromagnetic particles. Physical Review B 71: 060405(R). Kryder, M. H., W. Messner, and L. R. Carley 1996. Approaches to 10 Gbit/in(2) recording. Journal of Applied Physics 79: 4485–4490. Lachab, M., M. Nozaki, J. Wang et al. 2000. Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process. Journal of Applied Physics 87: 1374–1378. Lang, X. Y., W. T. Zheng, and Q. Jiang 2006. Size and interface efects on ferromagnetic and antiferromagnetic transition temperatures. Physical Review B 73: 224444. Leroy, F., G. Renaud, A. Letoublon, R. Lazzari, C. Mottet, and J. Goniakowski 2005. Self-organized growth of nanoparticles on a surface patterned by a buried dislocation network. Physical Review Letters 95: 185501. Li, S. P., W. S. Lew, Y. B. Xu et al. 2000. Magnetic nanoscale dots on colloid crystal surfaces. Applied Physics Letters 76: 748–750. Lodder, J. C. 2004. Methods for preparing patterned media for high-density recording. Journal of Magnetism and Magnetic Materials 272–276: 1692–1697. Lohau, J., A. Moser, C. T. Rettner, M. E. Best, and B. D. Terris 2001. Writing and reading perpendicular magnetic recording media patterned by a focused ion beam. Applied Physics Letters 78: 990–992.

Handbook of Nanophysics: Principles and Methods

Madou, M. J. 1997. Fundamentals of Microfabrication. Boca Raton, FL: CRC Press. Martin, J. I., J. Nogues, K. Liu, J. L. Vicent, and I. K. Schuller 2003. Ordered magnetic nanostructures: Fabrication and properties. Journal of Magnetism and Magnetic Materials 256: 449–501. Marty, F., A. Vaterlaus, V. Weich, C. Stamm, U. Maier, and D. Pescia 1999. Ultrathin magnetic particles. Journal of Applied Physics 85: 6166–6168. McKendrick, D., R. F. Doner, and S. Haggard 2000. From Silicon Valley to Singapore: Location and Competitive Advantage in the Hard Disk Drive Industry. Stanford, CA: Stanford University Press. Moroni, R., D. Sekiba, F. B. de Mongeot et al. 2003. Uniaxial magnetic anisotropy in nanostructured Co/Cu(001): From surface ripples to nanowires. Physical Review Letters 91: 167207. Moser, A. and D. Weller 2001. hermal efects in high-density recording media. In he Physics of Ultra-High-Density Magnetic Recording, (Eds.) M. L. Plumer, J. v. Ek, and D. Weller. Berlin, Germany; New York: Springer. Moser, A., D. Weller, M. E. Best, and M. F. Doerner 1999. Dynamic coercivity measurements in thin ilm recording media using a contact write/read tester. Journal of Applied Physics 85: 5018–5020. New, R. M. H., R. F. W. Pease, and R. L. White 1994. Submicron patterning of thin cobalt ilms for magnetic storage. Journal of Vacuum Science & Technology B 12: 3196–3201. Nordquist, K., S. Pendharkar, M. Durlam et al. 1997. Process development of sub-0.5 mu m nonvolatile magnetoresistive random access memory arrays. Journal of Vacuum Science & Technology B 15: 2274–2278. Orlof, J., L. Swanson, and M. W. Utlaut 2003. High Resolution Focused Ion Beams: FIB and Its Applications: he Physics of Liquid Metal Ion Sources and Ion Optics and heir Application to Focused Ion Beam Technology. New York: Kluwer Academic/Plenum Publishers. Osborn, J. A. 1945. Demagnetizing factors of the general ellipsoid. Physical Review 67: 351. Pogoryelov, Y. and T. Suzuki 2007. Fabrication of alloy FeCoPt particles by IBICVD and their characterization. IEEE Transactions on Magnetics 43: 888–890. Porthun, S., L. Abelmann, and C. Lodder 1998. Magnetic force microscopy of thin ilm media for high density magnetic recording. Journal of Magnetism and Magnetic Materials 182: 238–273. Rettner, C. T., M. E. Best, and B. D. Terris 2001. Patterning of granular magnetic media with a focused ion beam to produce single-domain islands at > 140 Gbit/in(2). IEEE Transactions on Magnetics 37: 1649–1651. Ross, C. 2001. Patterned magnetic recording media. Annual Review of Materials Research 31: 203–235. Sheats, J. R. and B. W. Smith 1998. Microlithography: Science and Technology. New York: Marcel Dekker. Shen, J. and J. Kirschner 2002. Tailoring magnetism in artiicially structured materials: he new frontier. Surface Science 500: 300–322.

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Shen, J., J. P. Pierce, E. W. Plummer, and J. Kirschner 2003. he efect of spatial coninement on magnetism: Films, stripes and dots of Fe on Cu(111). Journal of Physics: Condensed Matter 15: R1-R30. Shi, J., S. Tehrani, T. Zhu, Y. F. Zheng, and J. G. Zhu 1999. Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays. Applied Physics Letters 74: 2525–2527. Stamm, C., F. Marty, A. Vaterlaus et al. 1998. Two-dimensional magnetic particles. Science 282: 449–451. Streblechenko, D. and M. R. Scheinfein 1998. Magnetic nanostructures produced by electron beam patterning of direct write transition metal luoride resists. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 16: 1374–1379. Terris, B. D. and T. homson 2005. Nanofabricated and self-assembled magnetic structures as data storage media. Journal of Physics D-Applied Physics 38: R199-R222. Terris, B. D., T. homson, and G. Hu 2007. Patterned media for future magnetic data storage. Microsystem TechnologiesMicro-and Nanosystems-Information Storage and Processing Systems 13: 189–196. hompson, L. F., C. G. Willson, and M. J. Bowden 1994. Introduction to Microlithography. Washington, DC: American Chemical Society. Townsend, P. D., J. C. Kelly, and N. E. W. Hartley 1976. Ion Implantation, Sputtering and heir Applications. New York: Academic Press. Utke, I., P. Hofmann, R. Berger, and L. Scandella 2002. Highresolution magnetic Co supertips grown by a focused electron beam. Applied Physics Letters 80: 4792–4794. Utke, I., P. Hofmann, and J. Melngailis 2008. Gas-assisted focused electron beam and ion beam processing and fabrication. Journal of Vacuum Science & Technology B 26: 1197–1276.

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Valbusa, U., C. Boragno, and F. B. de Mongeot 2002. Nanostructuring surfaces by ion sputtering. Journal of Physics: Condensed Matter 14: 8153–8175. Valeri, S., A. di Bona, and P. Vavassori 2006. Magnetic anisotropies in focused ion beam sculpted arrays of submicrometric magnetic dots. In Magnetic Properties of Laterally Conined Nanometric Structures, (Ed.) G. Gubbiotti. Kerala, India: Transworld Research Network. Vavassori, P. 2000. Polarization modulation technique for magneto-optical quantitative vector magnetometry. Applied Physics Letters 77: 1605–1607. Vavassori, P., D. Bisero, F. Carace et al. 2005a. Interplay between magnetocrystalline and conigurational anisotropies in Fe(001) square nanostructures. Physical Review B 72: 054405. Vavassori, P., D. Bisero, F. Carace et al. 2005b. Magnetocrystalline and conigurational anisotropies in Fe nanostructures. Journal of Magnetism and Magnetic Materials 290: 183–186. Weller, D. and A. Moser 1999. hermal efect limits in ultrahighdensity magnetic recording. IEEE Transactions on Magnetics 35: 4423–4439. White, R. L., R. M. H. New, and R. F. W. Pease 1997. Patterned media: A viable route to 50 Gbit/in2 and up for magnetic recording? IEEE Transactions on Magnetics 33: 990–995. Xu, J. and A. J. Steckl 1994. Fabrication of visibly photoluminescent Si microstructures by focussed ion-beam implantation and wet etching. Applied Physics Letters 65: 2081–2083. Xu, Q. Y., Y. Kageyama, and T. Suzuki 2005. Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles. Journal of Applied Physics 97: 10K308.

27 Nanoscale Dynamics in Magnetism 27.1 Introduction ........................................................................................................................... 27-1 27.2 Magnetic Structures in Nanoscopic Samples and heir Dynamics .............................. 27-2 Static Magnetic Structures • Dynamics of Small Magnetic Structures

Yves Acremann* SLAC National Accelerator Laboratory

Hans Christoph Siegmann SLAC National Accelerator Laboratory

27.3 Selected Experimental Results .............................................................................................27-6 Gyration and Switching of the Vortex Core • Switching of a Néel Domain Wall by an Antivortex • Reversing the Magnetization by a Vortex

27.4 Conclusion ............................................................................................................................ 27-12 Acknowledgments ........................................................................................................................... 27-12 References......................................................................................................................................... 27-12

27.1 Introduction In the past decades, we have learned how nanometric fabrication techniques lead to nanometer-scale magnets. It is now well established that nanomagnets can possess quite diferent static magnetic properties compared to their parent bulk material [1]. More recently, it has been found that magnetization dynamics is generally also quite diferent from what is expected from bulk studies, in particular the switching of the magnetization to the opposite direction, one of the basic operations in the application of magnetism which follows a pathway that is unique and difers quite dramatically depending on size, shape, and interface of the magnetic structure with its substrate [2]. Nanomagnets are of high current interest as they have many applications, e.g., in data storage technology, magnetic ield sensing, and development of hard magnets [3]. Magnetization dynamics is known to involve a large range of time scales extending from millions of years in geomagnetism to years in magnetic storage media, milli- and microseconds in AC transformers, and nanoseconds in magnetic data writing and reading. his survey covers ultrafast magnetization dynamics ranging from nanosecond (10−9 s) over picosecond (10−12 s) to femtosecond (10−15 s) in nano-sized particles and magnetic structures. New tools such as pulsed lasers, x-ray sources, and polarized electron currents have extended the study of magnetism dynamics to the femtosecond time-range at nanoscale spatial resolution. Speciically, the new pulsed x-ray sources such as synchrotron-based sources and x-ray lasers combine the possibility to observe the dynamics of magnetic processes in nanoscale structures with element speciicity. Magnetism has attracted physicists since ancient times. It is the only solid-state quantum phenomenon that exists up

to 1000 K, yet it is to this day still not understood satisfactorily. However, we have seen great advances in the last decades, based on the development of surface science and spectroscopy. Furthermore, experiments with polarized electron beams or currents can probe the elusive exchange interaction inducing all magnetic phenomena, ranging from static long-range magnetic order as it depends on the band structure and temperature to the plethora of nanoscopic magnetic structures and their dynamics. Polarized electrons can give insight into very fast dynamics at the femtosecond level as well, exploring particularly the promising new ield of magnetization dynamics excited by spin currents. he spin of the electron and its interaction with various stimuli in the solid-state environment underlie all magnetization dynamics. he theoretical concept of the spin has been developed mostly by Pauli, Dirac, and Heisenberg in the time period 1925– 1928. However, today the electron spin has become a reality that entered everyday life and is modifying the human civilization through its utilization in magnetic devices such as computer hard drives and high-density advanced magnetic memories without which the Internet and many other modern commodities could not exist. It turns out that small magnetic structures, layered magnetic materials, and their interfaces are the building blocks of advanced information technology as we know it today. Some fundamental discoveries emerging from the art of producing such structures with well-controlled interfaces as well as new spin-based spectroscopies initiated a paradigm shit in our thinking and a technological revolution where the electron spin is now the sensor as well as the carrier of information. Ater a survey of important static magnetic structures and their dynamics, we will describe new experimental techniques

* He is currently ai liated with Laboratory for Solid State Physics, ETH Zürich, Zürich, Switzerland.

27-1

27-2

Handbook of Nanophysics: Principles and Methods

developed to dynamically image these structures down to femtosecond temporal and nanoscale spatial resolution. It turns out that this cannot be done in full generality; one rather has to conine the discussion to few elementary cases that give irst physical insight into the complex phenomena that are still under investigation in numerous research groups. he present survey attempts to lead the reader in an easy way to the frontiers of what is known today on ultrafast magnetization dynamics at the nanoscale.

27.2 Magnetic Structures in Nanoscopic Samples and Their Dynamics 27.2.1 Static Magnetic Structures Ferromagnetic samples show a rich variety of magnetic structures depending on their size and shape. he main factor that determines the magnetic structure is the exchange interaction that tends to align spins in parallel in ferromagnets. However, this interaction, albeit strong, is short range, extending only to the nearest neighbors in most cases. In the Heisenberg model, explained in the textbooks on magnetism, e.g., in Ref. [2], one assumes that a spin s is located at each lattice site. he diference ΔE in energy in a state where two neighboring spins are parallel compared to where they enclose an angle β is given by ΔE = 2 Js 2 [1 − cos β]

(27.1)

where J is the exchange integral. he smallest magnetic structure is thus given by reversing the spin at one lattice site. However, this smallest magnetic structure known as a Stoner excitation is energetically very unfavorable and therefore has a very short lifetime amounting to ≤1 fs in a perfect lattice. However, if the angle β 0) and H2 (>0) with H1 < H2. he basic principle is that when the magnetizations of the two ferromagnets are parallel, the majority spins injected by one ferromagnet are transmitted by the other and the device resistance is low. When they are antiparallel, the majority spins injected by one are blocked by the other and the device resistance is high. At irst, the device is subjected to a strong magnetic ield (H = Hscan > H2), which magnetizes both the ferromagnets along the direction of the ield. Next, the ield is decreased, swept through zero, and reversed. At this stage, when the magnetic ield strength just exceeds H1 (i.e., −H2 < H < −H1), the ferromagnet with the lower coercivity (i.e., H1) lips magnetization. Now, the two ferromagnetic contacts have their magnetizations * h is discussion assumes that the spin polarizations in the two ferromagnets have the same sign (e.g., in the case of cobalt and nickel). his means that majority spins in both ferromagnets point in the same direction when they are magnetized parallel. If the spin polarizations have opposite signs (e.g., in the case of iron and cobalt), then the majority spins in one ferromagnet and those in the other point in opposite directions when they are magnetized parallel. In that case, the spin-valve’s resistance will be lower when the ferromagnetic contacts are antiparallel and higher when they are parallel.

28-5

Spins in Organic Semiconductor Nanostructures

antiparallel to each other. Hence at H = −H1 a jump (increase) in the device resistance is observed. As the magnetic ield is made stronger in the same (i.e., reverse) direction, the coercive ield of the second ferromagnet will be reached (H = −H2). At this point, the second ferromagnet also lips its magnetization direction, which once again places the two ferromagnets in a coniguration where their magnetizations are parallel. hus, the resistance drops again at H = −H2. herefore, during a single scan of magnetic ield (say from Hscan to −Hscan), a spin-valve device shows a resistance peak between the coercive ields of the two ferromagnets (i.e., between −H1 and −H2). If the magnetic ield is varied from −Hscan to Hscan, an identical peak is observed between H1 and H2. hese are the “spin-valve peaks.” he spin-valve response is pictorially explained in Figure 28.2. As mentioned before, the spin-valve device is the basic component of MRAM. here, it is fashioned out of a tunnel barrier sandwiched between two ferromagnets. When the magnetizations of the contacts are parallel, the device resistance is low and stores, say, the binary bit 0. When the magnetizations are antiparallel, the device resistance is high and stores the binary bit 1. One of the ferromagnets is a hard magnetic layer with high coercivity, while the other is a sot magnetic layer with low coercivity. Writing of bits is achieved by switching the magnetization of the sot layer with a small magnetic ield, which does not afect B-field Polarizer (FM)

(SC)

Analyzer (FM) R B-field

B B-field

FIGURE 28.2 Explanation of the occurrence of the spin-valve peak in the magnetoresistance of a tri-layered spin-valve structure. (Top) At a high magnetic ield, pointing to the right, both ferromagnets (designated spin polarizer and spin analyzer in analogy with optics) are magnetized in the same direction so that injected spins transmit easily (assuming little spin relaxation in the spacer semiconductor layer). In this case, the device resistance is low. (Middle) When the ield is reversed and its strength exceeds the coercive ield of one of the ferromagnets (the one with lower coercivity), this ferromagnet’s magnetization lips, placing the contacts in the antiparallel coniguration. Injected spins now do not transmit easily and the device resistance increases. (Bottom) As the magnetic ield strength increases further in the reverse direction, it ultimately exceeds the coercive ield of the second ferromagnet as well and its magnetization lips, placing the magnetizations of the two ferromagnets once again in the parallel coniguration. he device resistance now drops, giving rise to a resistance peak between the two coercive ields. his is the “spin-valve peak” and its height is the strength of the spin-valve signal. he resulting magnetoresistance traces for both forward and reverse scans of the magnetic ield are shown on the right. (Reproduced from Pramanik, S. et al., Electrochemical self-assembly of nanostructures: Fabrication and device applications, in Nalwa, H.S. (ed.), Encyclopedia of Nanoscience and Nanotechnology, 2nd edn., to appear. With permission.)

the hard layer. For “electrical writing” as opposed to “magnetic writing,” one can switch the magnetization of the sot layer electrically by using the so-called spin-torque efect [51]. Reading of the stored bit is accomplished by simply measuring the device resistance (high resistance = 1; low resistance = 0). 28.3.3.1 Determining the Spin Relaxation Time and Length Using a Spin-Valve Device he spin-valve device is exceedingly versatile. Not only can it serve as a memory element, but it is a “meter” used to measure the spin relaxation time and length in the spacer material. We now describe how this is accomplished. he spin-valve signal is proportional to the height of the spinvalve peak and is generally deined as the ratio ΔR RAP − RP = R RP

(28.2)

where R AP and R P denote the device resistances when the magnetizations of the two ferromagnetic contacts are antiparallel and parallel, respectively. he height of the spin-valve peak is ΔR. If the spacer is a semiconductor material, there exists a Schottky barrier at the ferromagnet/semiconductor interface. Under the inluence of an applied bias, carriers are injected from the ferromagnet into the semiconductor via tunneling through this barrier with a surviving spin polarization P1. As long as the barrier is thin enough, we can ignore any loss of spin polarization in traversing the barrier and assume that P1 is approximately the spin polarization of carriers at the Fermi energy in the injecting ferromagnet. Ater injection, carriers drit and dif use through the spacer with exponentially decaying spin polarization given by P1 exp[−x/L s] where x is the distance traveled and L s is the spin dif usion length (or spin relaxation length) in the spacer. he exponential decay follows from the drit-dif usion model of spin transport [52]. Finally, the carriers tunnel through the Schottky barrier at the interface of the spacer and the second ferromagnet to reach the detecting contact. he conduction energy band diagram of the spin valve, along with the nature of transport in three diferent regions of the spacer layer, is shown in Figure 28.3. If we apply the Jullière formula [53] at the “detecting” interface, we get ΔR 2P1P2e −d / Ls = R 1 − P1P2e −d / Ls

(28.3)

where P2 is the spin polarization of the carriers at the Fermi energy of the second (i.e., detecting) ferromagnet d is the length of the spacer layer If we know P1, P2, and d and experimentally measure ΔR/R, then we can determine Ls from Equation 28.3.

28-6

Handbook of Nanophysics: Principles and Methods Tunneling through the Schottky barrier Drift/diffuse

Tunneling through the Schottky barrier eV

μ1 Ec

Ferromagnetic contact 1

μ2

Ferromagnetic contact 2

FIGURE 28.3 he transport picture that allows application of the Julliere formula to determine spin relaxation length and time. An injected carrier from the let ferromagnetic contact tunnels through the irst Schottky barrier with spin polarization essentially intact, then drits and dif uses through the paramagnet losing spin polarization and inally tunnels into the second ferromagnet through yet another Schottky barrier. We show the conduction band proi le in the semiconductor under a small bias voltage V. he chemical potentials in the two (metallic) ferromagnets are μ1 and μ2 .

One limitation of Jullière formalism is that this model ignores any possible loss of spin polarization at the interfaces between the spacer and either ferromagnetic contact. As a result, the spin relaxation length determined from Equation 28.3 is always an underestimate. To understand this, we replace P1 and P2 in Equation 28.3 by P1/η1 and P2/η2, respectively. Here η1, η2 ≥ 1 account for the loss of spin polarizations at the interfaces. he equality holds when there is no loss at the interfaces. We can recast Equation 28.3 in the following form: e −d / Ls =C η

(28.4)

where η = η1η2 C = ΔR/[P(2R + ΔR)] with P = P1P2 Clearly if we ignore spin lips at the interfaces (i.e., assume η = 1), we will obtain an underestimated value of L s. Spin relaxation length (Ls) is related to the spin relaxation time (τs) as follows: Ls = Ds τs

(28.5)

where Ds is the spin dif usion coeicient that is not necessarily equal to the charge dif usion coeicient [54]. Knowledge of Ds in the spacer allows us to ind τs. Spin-valve structures have been extensively employed for probing various features of spin-polarized carrier transport in diferent types of paramagnetic materials including metals [55],

tunnel barriers [56], inorganic semiconductors [57], and carbon nanotubes [58]. It is to be noted that in the case of all-metal spin valves (where all three layers are metallic), there is no Schottky barrier at the interfaces and the Jullière model is not applicable. In that case, one uses a diferent approach to measure the spin relaxation length and time [59], which is not discussed here since we are discussing organic semiconductors that inevitably form a Schottky barrier at a metal interface. In spin-valve experiments, it is customary to ignore any loss of spin polarization while traversing the Schottky barrier at the interface since d 0/L s ≈ 0, where d 0 is the thickness of the Schottky barrier. Since this thickness has to be small enough to allow tunneling through it, it is invariably much smaller than L s. 28.3.3.2 Inverse Spin-Valve Effect In some particular cases, it is possible to observe the so-called inverse spin-valve efect where the device resistance is lower when the magnetizations of the ferromagnetic contacts are antiparallel [60–63]. In this case, the spin-valve signal ΔR is negative, so that one gets a spin-valve “trough” instead of a spin-valve “peak.” his can happen because of various reasons. First, if the spin polarizations of the two ferromagnets (P1 and P2) have opposite signs, then obviously the sign of R will be inverted (Equation 28.3). A second explanation has been provided in Refs. [61,62], which predicts that resonant tunneling through an impurity state in the paramagnetic spacer layer inverts the sign of the spin-valve response since it efectively inverts the sign of the spin polarization of the ferromagnetic contact nearer to the impurity. here is also a third explanation. A ferromagnet like cobalt or nickel has both d- and s-electrons at the Fermi level. he d-electrons are more numerous (because of the higher density of states in the d-band at the Fermi level), but also have the heavier efective mass. he majority s-spins and majority d-spins at the Fermi level are mutually antiparallel. In fact, the d-electron spins will tend to point antiparallel to an applied magnetic ield (as if their Landé g-factor is negative) while the s-electron spins will tend to point parallel to the applied ield (as if their Landé g-factor is positive). Even though the d-electrons are more numerous, the s-electrons are faster (because of their lower efective mass) and therefore may contribute more to the current than the d-electrons. Consider a spin valve with cobalt as the injecting contact and nickel as the detecting contact. Assume, for the sake of argument, that both s- and d-electrons have a very high degree of spin polarization at the Fermi level, so that all injected s-electrons have the same spin polarization and all injected d-electrons also have the same spin polarization, but the s- and d- spin polarizations are mutually antiparallel. If the s-electrons from cobalt contribute more to the current, then when the ferromagnets are in the parallel coniguration, the s-electrons impinging on the detector i nd their spins to be antiparallel to those in the d-electron band (with the higher density of states) of the detector (nickel) and therefore do not transmit. his makes the device resistance high. When the magnetizations of the two contacts are antiparallel, the injected s-electrons i nd their spins parallel to those in

28-7

Spins in Organic Semiconductor Nanostructures

the d-band of nickel and hence transmit well. his makes the device resistance low. herefore, the spin-valve signal will be negative (i.e., we will observe a spin-valve trough instead of a spin-valve peak). If, instead, the d-electrons contribute more to current than s-electrons, then, of course, the spin-valve signal will be positive. hus, the sign depends on whether the s- or the d-electrons are majority contributors to the current.

28.3.4 Spin Relaxation Mechanisms here are various mechanisms that cause spin relaxation in the paramagnetic spacer layer. In case of semiconductors (as well as metals), the most dominant mechanisms [64] are (a) Elliott–Yafet mechanism [65,66], (b) D’yakonov–Perel’ mechanism [67,68], (c) Bir–Aronov–Pikus mechanism [69], and (d) hyperi ne interaction with nuclei [70]. Among these, the irst two mechanisms accrue from spin–orbit interaction. he third one originates from exchange coupling between electron and hole spins, and the last is due to interaction between carrier spins and nuclear spins. hese mechanisms are briely described below. 28.3.4.1 Elliott–Yafet Mechanism In the presence of spin–orbit coupling, Bloch states of a real crystal are not spin eigenstates. herefore, these states are not pure spin states with a i xed spin quantization axis, but are either pseudo-spin-up or pseudo-spin-down, in the sense that a particular state with a given spin orientation (say ↑) has a small admixture of the opposite spin state ↓. his is an outcome of the presence of spin–orbit coupling in the crystal which mixes the pure spin-up and pure spin-down states. herefore, we can write the Bloch states as    uk (r ) = ak (r ) ↑ + bk (r ) ↓ .

(28.6)

he degree of admixture (i.e., the ratio ak⃗ /bk⃗) is a function of the electronic wavevector k⃗. As a result, when a momentum relaxing scattering event causes a transition between two states with different wavevectors, it will also reorient the spin and cause spin relaxation. Even a spin-independent scatterer, such as a nonmagnetic impurity or an acoustic phonon can cause spin relaxation by this mechanism as long as it also relaxes momentum (i.e., changes the wavevector). his is the Elliott–Yafet mechanism of spin relaxation. From the above discussion, one naturally expects that spin relaxation rate due to Elliott–Yafet mechanism should be proportional to the momentum scattering rate. h is is indeed true, and from [64], we quote a formula relating these two quantities: 2

2

⎛ Δ so ⎞ ⎛ Ek ⎞ 1 1 = A ⎜⎜ ⎟ ⎜⎜ ⎟⎟ ⎟ τs, EY (Ek ) + Δ τ E E ( so ⎠ ⎝ g ⎠ p Ek ) ⎝ g

(28.7)

his formula is valid for III-V semiconductors. Here τp(s,EY)(Ek) is the momentum relaxation time (spin relaxation time due to

Elliott–Yafet process) for electrons with wavevector k and energy Ek. he bandgap is denoted by E g and Δso is the spin–orbit splitting of the valence band. he prefactor A, depends on the nature of the scattering mechanism. he above equation indicates that Elliott–Yafet process is signiicant for semiconductors with small band gap and large spin–orbit splitting. Typical example of such a semiconductor is indium arsenide (InAs). It is important to note that in case of Elliott–Yafet mechanism, the mere presence of spin–orbit interaction in the system does not cause spin relaxation. Only if the carriers are scattered during transport, spin relaxation takes place. Higher the momentum scattering rate, higher is the spin scattering rate. h is observation is valid even in the case of hopping transport in disordered (noncrystalline) solids such as organics where there is no bandstructure and no Bloch states as such, but momentum relaxation still causes concomitant spin relaxation. 28.3.4.2 D’yakonov–Perel’ Mechanism he D’yakonov–Perel’ mechanism of spin relaxation is dominant in solids that lack inversion symmetry. Examples of such systems are III-V semiconductors (e.g., GaAs) or II-VI semiconductors (e.g., ZnSe) where inversion symmetry is broken by the presence of two distinct atoms in the Bravais lattice. Such kind of asymmetry is known as bulk inversion asymmetry. Inversion symmetry can also be broken by an external or built-in electric ield, which makes the conduction band energy proi le inversion asymmetric along the direction of the electric ield. Such asymmetry is called structural inversion asymmetry. Both types of asymmetries result in efective electrostatic potential gradients (or electric ields) that a charge carrier experiences. In the rest frame of a moving carrier, the electric ield Lorentz transforms to an efective magnetic ield Bef whose strength depends on the electron’s velocity. he interaction of an electron’s spin with this efective magnetic ield is the basis of spin–orbit interaction. Both bulk inversion asymmetry and structural inversion asymmetry give rise to spin–orbit interaction and associated magnetic ields Bef. he former gives rise to the Dresselhaus spin–orbit interaction [71] and the latter to the Rashba spin–orbit interaction [72]. In a disordered organic semiconductor, the Rashba interaction is overwhelmingly dominant over the Dresselhaus interaction since there is no bulk inversion asymmetry. Microscopic electric ields arising from charged impurities and surface states (e.g., dangling molecular bonds) break structural inversion symmetry locally, causing Rashba spin–orbit interaction. A carrier’s spin in a solid with Rashba and/or Dresselhaus spin–orbit interaction Larmor precesses continuously about Bef. Since the magnitude of Bef is proportional to the magnitude of carrier velocity v, it is diferent for diferent carriers that have diferent velocities owing to diferent scattering histories. hus, collisions randomize Bef and therefore the orientations of the precessing spins. As a result, the ensemble-averaged spin polarization decays with time leading to continual depolarization. his is the D’yakonov–Perel’ mode of spin relaxation. If a carrier experiences frequent momentum relaxing scattering (i.e., small mobility and small τp), then v is small implying |Bef | is

28-8

Handbook of Nanophysics: Principles and Methods

small and the spin precession frequency (which is proportional to Bef ) is also small. As a result, the D’yakonov–Perel’ process is less efective in low-mobility samples than in high-mobility samples. It therefore stands to reason that the spin relaxation rate due to D’yakonov–Perel’ process will be inversely proportional to the momentum scattering rate. he following formula is valid for bulk nondegenerate semiconductors where the carriers are in quasi-equilibrium [64]: 1 (kT )3 = Qα 2 2 τ p τDP ℏ Eg

(28.8)

where Q is a dimensionless quantity ranging from 0.8–2.7 depending on the dominant momentum relaxation process Eg is the bandgap τp is the momentum relaxation time α is a measure of the spin–orbit coupling strength Note that the Elliott–Yafet and the D’yakonov–Perel’ mechanisms can be distinguished from each other by the opposite dependences of their spin relaxation rates on mobility. In the former mechanism, the spin relaxation rate is inversely proportional to the mobility and in the latter mechanism, it is directly proportional. We will later show how these opposite dependences can be exploited to identify the dominant spin relaxation mechanism in organics. 28.3.4.3 Bir–Aronov–Pikus Mechanism his mechanism of spin relaxation is dominant in bipolar semiconductors. he exchange interaction between electrons and holes is described by the Hamiltonian H = AS⃗ ∙ ⃗J δ(r⃗ ) where A is proportional to the exchange integral between the conduction and valence states, J is the angular momentum operator for holes, and S⃗ is the electron spin operator. Now, if the hole spin lips (owing to strong spin–orbit interaction in the valence band), then electron–hole coupling will make the electron spin l ip as well, resulting in spin relaxation of electrons. A more detailed description is available in Ref. [64]. In case of unipolar transport, i.e., when current is carried by either electrons or holes but not both simultaneously, this mode of spin relaxation is obviously inefective. 28.3.4.4 Hyperi ne Interaction Hyperine interaction is the magnetic interaction between the magnetic moments of electrons and nuclei. his is the dominant spin relaxation mechanism for quasi-static carriers, i.e., when carriers are strongly localized in space and have no resultant momentum. In that case, they are virtually immune to Elliott– Yafet or D’yakonov–Perel’ relaxation since those two require carrier motion. herefore, the only remaining channel for spin relaxation is hyperine interaction. We can view this mechanism as caused by an efective magnetic ield (BN) created by nuclear spins, which interacts with electron spins and causes dephasing.

In most organics, carrier wavefunctions are quasi-localized over individual atoms or molecules, and carrier transport is by hopping from site to site (which causes the mobility to be exceedingly poor). Because the average carrier velocity is so small (mobility so low), the D’yakonov–Perel’ mechanism is almost certainly not going to be dominant. hat leaves the Elliott–Yafet and hyperine interactions as the two likely mechanisms for spin relaxation. Which one is the more dominant may depend on the speciic organic. In the case of the Alq3 molecule, we found out (see later sections) that the Elliott–Yafet mode is the dominant spin relaxation channel, at least at moderate-to-high transport-driving electric ields. his is probably because the carrier wavefunctions in this molecule are quasi-localized over carbon atoms [6] whose naturally abundant isotope 12C has no net nuclear spin and hence cannot cause hyperi ne interaction. However, in some other molecule where the carrier wavefunctions are spread over atoms with nonzero nuclear spin, it is entirely possible for the hyperi ne interaction to outweigh the Elliott–Yafet mechanism.

28.4 Spin Transport in Organic Semiconductors: Organic Spin Valves Study of spin transport in organic semiconductors is a relatively new area of scientiic endeavor for both organic electronics and spintronics research communities. he irst study in this direction [73] dates back to 2002. It reported spin injection and transport through an organic semiconductor sexithienyl (T6). his material is a π-conjugated rigid-rod oligomer which, because of its relatively high mobility (∼10−2 cm2V−1s−1), is a promising material for organic ield-efect transistors [74–76]. Organic light-emitting diodes based on this material are capable of producing polarized electroluminescence [77]. he device reported in [73] had a planar spin-valve geometry in which two planar LSMO (lanthanum strontium manganate: La1−xSrxMnO3 with 0.2 < x < 0.5) electrodes were separated by a T6 spacer layer (see Figure 28.4). LSMO is a half-metallic ferromagnet and acts as an excellent spin injector/detector due to near 100% spin polarization at low temperatures. he overall device resistance was primarily determined by the T6 region whose resistance was approximately six orders of magnitude higher than that of LSMO. he interface resistance did not play a signiicant role in this structure since the device resistance was found to scale linearly with T6 thickness. he device resistance showed a strong dependence on magnetic ield. It is to be noted that since both LSMO contacts were nominally identical, they did not allow independent switching of magnetizations as required in the case of a spin valve. However, one could still change the magnetizations from random (zero ield) to parallel (at high ield). In the absence of any magnetic ield, i.e., when the LSMO electrodes had random magnetization orientations, the device resistance was high. When a suiciently large (saturation) magnetic ield of 3.4 kOe was applied, the LSMO electrodes acquired magnetizations that were parallel to each

28-9

Spins in Organic Semiconductor Nanostructures

I V 20 μm LSMO

2.5 μm 1.8 × 1.6 mm2

100 × 50 μm2

T6 LSMO

w

LSMO

Substrate

FIGURE 28.4 he schematic view of the hybrid junction and dc 4-probe electrical setup. he cross-sectional view below shows a region near the spin transport channel. (Reproduced from Dediu, V. et al., Solid State Commun., 122, 181, 2002. With permission.)

other and the device resistance dropped. Maximum resistance change of ∼30% was observed when the width of the T6 spacer was ∼140 nm. For larger spacer widths, the amount of resistance change decreased and disappeared beyond ∼300 nm. his indicated that the spin relaxation length in T6 was between 140 and 300 nm. Additionally T6 did not show any intrinsic magnetoresistance efect up to 1 T. herefore, the observed magnetoresistance in the LSMO–T6–LSMO device originated from the spin-valve efect discussed above and conirmed spin-polarized carrier injection and transport in T6. he spin relaxation length (Ls) and spin relaxation time τs (or more accurately the spin-lip time or

spin-lattice relaxation time T1) in T6 was estimated to be ∼200 nm and ∼1 μs, respectively, at room temperature. Interestingly, the resistance change was immune to the applied bias at least in the range of 0.2–0.3 MV/cm as reported in [73]. However, in other organics (e.g., Alq3; see later), we found that the spin-valve signal is strongly sensitive to applied bias and falls of rapidly with increasing bias. he next study [78] explored spin transport in the organic semiconductor Alq3. he spin-valve device in this case had a vertical coniguration (Figure 28.5) with cobalt and LSMO acting as spin injector and detector. he spin-valve peaks appeared between the coercive ields of LSMO (30 Oe) and cobalt (150 Oe). Interestingly, in this case, the sign of the spin-valve peak was negative i.e., the device resistance was low when magnetizations were antiparallel and high when they were parallel. h is was to be expected since carriers at the Fermi energy in Co and LSMO have opposite signs of spin polarization. Unlike in the case of T6, the Alq3 spin-valve signal vanished at room temperature. his was attributed to enhanced spin relaxation rate in Alq3 at elevated temperatures. From the measured data, the spin relaxation length (L s) in Alq3 at 11 K was estimated as ∼45 nm (based on the Julliére formula). he spin-valve signal also decreased with increasing bias, an efect that was not observed in the case of T6. One important aspect of fabricating vertical spin-valve structures is that when a ferromagnet like cobalt is deposited on organics, the interface is generally ill-deined. his happens due to the sotness of the organic layer that allows signiicant difusion of the ferromagnetic material into the organic at high temperatures of deposition. In the device of Ref. [78], when cobalt was deposited on Alq3, the dif usion of cobalt atoms extended up to a depth of 100 nm inside Alq3. So, any device with Alq3 thickness of 100 nm or less should not show any spin-valve response since the two ferromagnets will be electrically shorted via pinhole current paths. his has been coni rmed independently in Ref. [79]. At the same time, in order to observe any spin-valve signal,

V i

Vacuum FM2

Co/Al Alq3 LSMO

CoAl Alq3

LS

M

O

Organic

200 nm

FM1

Substrate

Substrate (a)

H

(b)

FIGURE 28.5 (a) An organic spin-valve structure where the organic spacer is an Alq3 thin i lm. (b) Shows a cross-sectional micrograph. (Reproduced from Xiong, Z.H. et al., Nature, 427, 821, 2004. With permission.)

28-10

the total thickness of the Alq3 layer must not exceed ∼(100 nm + Ls) = 145 nm [78,79]. In Ref. [80], the thickness of the Alq3 layer in a Co–Alq3–Fe spin-valve device was always less than 100 nm, which is probably the reason why they failed to observe any measurable spin-valve signal because the Co and Fe contacts could have been electrically shorted. It is to be noted that existence of a few pinhole shorts does not necessarily guarantee ohmic current–voltage characteristics [81], but signiicant interdif usion of the contact metal into the organic will surely reduce the Schottky barrier height at the metal–organic interface enough to allow strong tunneling and thermionic emission of electrons from the metal into the organic, thereby rendering the current– voltage characteristic ohmic. Ref. [82] reported tunneling magnetoresistance in a spin-valve device where the tunnel barrier was a composite of ultrathin layers of Al2O3 and Alq3. he device structure, listed in the order of deposition was as follows: Co/Al2O3 (0.6 nm)/Alq3 (1–4 nm)/Ni80Fe20. In this case, the top Ni80Fe20 layer did not seem to penetrate at all inside the thin Alq3 layer. his was in stark contrast to the interdifusion phenomenon described earlier. his device showed tunneling magnetoresistance (TMR) peaks of height 6% at room temperature. As expected, the height of the TMR peaks decreased gradually with increasing bias. Measurement of the spin polarization of the tunneling current, using Meservey–Tedrow technique [83], showed that the existence of the interfacial alumina barrier improved spin-injection eiciency. Similar studies performed on amorphous organic semiconductor rubrene [86] revealed a spin relaxation length (Ls) of 13.3 nm in this material and provided further evidence in support of the eicacy of the alumina barrier for spin injection. It is well known that a tunnel barrier increases spin-injection eiciency from a metallic ferromagnet into a semiconducting paramagnet since it ameliorates the notorious “conductivity mismatch problem” [84,85]. However, this is well understood only in the case of dif usive carrier transport. In organics, transport is mostly by hopping from site to site and there is no clear theory yet (to our knowledge) that can explain why a tunnel barrier might increase spin-injection eiciency from a metallic ferromagnet into an organic. his remains an open theoretical problem. he spin-valve efect has also been demonstrated for regioregular poly(3-hexylthiophene) (RR-P3HT) [87]. here exist reports of another magnetoresistance efect that is observed in organics even when the electrodes are nonmagnetic. his efect is dubbed OMAR. he origin of this phenomenon is still unclear. Although some propositions have been advanced to explain this efect citing hyperine interactions and other mechanisms, no widespread consensus has emerged.

28.5 Spin Transport in the Alq3 Nanowires The spin injection and transport experiments in organics, discussed so far, demonstrated unequivocally that it is possible to inject spin electrically from a ferromagnet into an organic. However, they did not shed any light on the nature

Handbook of Nanophysics: Principles and Methods

of the dominant spin relaxation mechanism (Elliott–Yafet, Dyakonov–Perel, or hyperfine interactions) in organics. Lack of this knowledge motivated us to investigate spin transport in organics with a view to establishing which spin relaxation mechanism is dominant. Consequently, we focused on organic nanowires [88,89] instead of standard two-dimensional geometries since comparison between the results obtained in nanowires and thin films can offer some insight into what type of spin relaxation mechanism holds sway in organic semiconductors. Carriers in nanowires will typically have lower mobility than in thin i lms because nanowires have a much larger surface-tovolume ratio and hence carriers experience more frequent scattering from charged surface states in nanowires than they do in thin i lms. hese scatterings are not surface roughness scatterings but rather Coulomb scattering from the charged surface states [90]. he surface roughness scattering does not increase signiicantly in nanowires since the mean free path in organics is very small (fractions of a nanometer) and as long as the nanowire diameter is much larger than the mean free path, we do not expect signiicantly increased surface roughness scattering. However, the Coulomb scattering from surface states increases dramatically. he Coulomb scattering is long range and afects carriers that are many mean free paths from the surface. As a result, nanowires invariably exhibit signiicantly lower mobilities than thin i lms. he mobility diference ofers a handle to probe the dominant spin relaxation mechanism in organics. As explained earlier, the Elliot–Yafet spin relaxation rate is directly proportional to the momentum relaxation rate and hence inversely proportional to the mobility while the Dyakonov–Perel rate is directly proportional to mobility. Hence, if we observe an increased spin relaxation rate in nanowires compared to thin i lms, then we will infer that Elliot–Yafet is dominant over Dyakonov–Perel; otherwise, we will conclude that the opposite is true. We carried out experiments that clearly showed the spin-valve efect in organic nanowires. From that, we were able to determine the spin relaxation length (Ls) and the spin relaxation time (τs) in nanowires, contrast them with the quantities measured in thin i lms, and thus determine the dominant spin relaxation mechanism in organics. We found that the spin relaxation time in nanowires is about an order of magnitude smaller than in thin i lms, which immediately suggests that the dominant spin relaxation mode is the Elliot–Yafet channel. We also showed that the spin relaxation time in Alq3 can approach 1 s at a temperature of 100 K. his is the longest spin relaxation time reported in any nanostructure above the liquid nitrogen temperature (77 K). In a diferent set of experiments, we observed a surprising correlation between the sign of the spin-valve peak and the background magnetoresistance in organic nanowires. We ofered a possible explanation for this intriguing correlation and in the process showed that a magnetic ield can increase the spin relaxation rate in organics, which is consistent with the Elliott–Yafet mechanism in two ways: (1) First, a magnetic ield bends the electron trajectories bringing them closer to the surface of the

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Spins in Organic Semiconductor Nanostructures

nanowire, which decreases mobility and increases the Elliott– Yafet spin relaxation rate. (2) Second, a magnetic ield causes “spin mixing,” which increases the admixing of spin-up and spin-down states (recall the discussion of Elliott–Yafet mechanism) which exacerbates spin relaxation. he increase of spin relaxation rate in a magnetic ield lends further support to our conclusion that the Elliott–Yafet mode is the dominant spin relaxation mechanism in organics. In the next section, we describe some of these experiments.

28.5.1 Experimental Details 28.5.1.1 Fabrication of Nanowire Organic Spin Valves We employ an electrochemical self-assembly technique [91] to fabricate nanowire organic spin valves. In this process, the starting material is a high-purity (99.999% pure) aluminum foil of nominal thickness ∼0.1 mm. he surface of the foil, when purchased of the shelf, is typically rough (rms surface roughness ∼1 μm) and is unsuitable for nanofabrication. herefore, we electropolish this foil following a well-established procedure [92] that reduces the rms value of the surface roughness to about 3 nm. Next, the aluminum foil is anodized in 0.3 M oxalic acid with an anodization voltage of 40 V dc. For this purpose, the foil is immersed in oxalic acid and connected to the positive terminal of a dc voltage source so that it acts as the anode. A platinum mesh is used as the cathode and a voltage drop of 40 V is maintained between the two electrodes. h is process creates a porous alumina (Al 2O3) ilm on the surface of the foil, containing a hexagonal array of pores of nominal diameter ∼50 nm and areal pore density 2 × 1010 cm−2. A typical atomic force micrograph of the top surface of the alumina i lm is shown in Figure 28.6. he dynamics of the pore formation process has been reviewed elsewhere [93] and will not be repeated here. he anodization is carried out for 10 min to produce a 1 μm thick alumina i lm and therefore yields pores that are 1 μm deep. At the bottom of the pores, there is a ∼20 nm thick layer of nonporous alumina known as the “barrier layer.” As shown in Figure 28.7, this layer separates the pore bottom from the aluminum substrate and inhibits vertical conduction of electrical current through any material hosted in the pores. Consequently, it is necessary to remove this barrier layer before depositing materials inside the pores. his can be accomplished either by a “reverse-polarity etching” procedure [94] or a pore soaking procedure [95]. In the former method, the porous i lm is immersed in phosphoric acid and connected to the negative terminal of a voltage source so that it acts as a cathode. A platinum mesh acts as the anode. A constant voltage of 7 V dc is maintained between the two electrodes, which etches away the alumina from the barrier layer until it is completely removed and the aluminum underneath the barrier layer is exposed. he second method is to simply soak the ilm in hot chromic/phosphoric acid without passing an electrical current. his process dissolves out the alumina from the barrier layer, as well as the pore walls, gradually. Owing to the isotropic nature of the etching process, the barrier layer removal process inevitably widens the pores, so that the pore diameter becomes ∼60 nm. To conirm

(a) 5.00

2.50

0

2.50

(b)

μm

0 5.00

FIGURE 28.6 (a) Atomic force micrograph of a nanoporous anodic alumina i lm produced by anodizing 99.999% pure aluminum in 0.3 M oxalic acid with a dc voltage of 40 V. he pore diameter is 50 nm. (b) he near-perfect regimentation of the pores into a hexagonal closepacked order within domains with size 0.5–1.0 μm. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

Al2O3 Pore type film (PTF) Barrier layer Curved interface Aluminum

FIGURE 28.7 Schematic cross section of the porous alumina i lm. (Reproduced from Pramanik, S. et al., Electrochemical self-assembly of nanostructures: Fabrication and device applications, in Nalwa, H.S. (ed.), Encyclopedia of Nanoscience and Nanotechnology, 2nd edn., to appear. With permission.)

28-12

Handbook of Nanophysics: Principles and Methods 5.00

2.50

0

2.50 μm

0 5.00

FIGURE 28.8 Atomic force micrograph of the back side of the porous alumina i lm ater detaching it from the aluminum surface. Most of the pores have been opened up by the reverse-polarity etching procedure. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

that the barrier layer has been indeed removed, we have stripped of the aluminum substrate in some sacriicial samples by soaking them in HgCl2 solution. his releases the porous alumina i lm from the aluminum substrate. he released i lm is captured and imaged from the back side. Figure 28.8 shows an atomic force micrograph of the back side of the alumina ilm. Most of the pores are clearly visible in this image, indicating that the barrier layer has been removed successfully from the bottom of the majority of pores by the etching procedure. Removing the barrier layer exposes the aluminum at the pore bottom and allows dc electrodeposition of materials selectively inside the pores, since the aluminum layer conducts dc current. At the same time, we are now able to perform transport measurements on nanowires electrodeposited within the pores, since we can electrically contact them from the bottom through the aluminum and also from the top by depositing a thin layer of metal that seeps inside the pores by dif usion and attaches to the nanowires. Note from Figure 28.8 that not every pore is open at the bottom so that not every nanowire can be electrically contacted, but the vast majority of them will be contacted and electrically interrogated in any transport measurement where the top metal ilm acts as one electrode and the bottom aluminum i lm as the other electrode. In order to fabricate nanowire spin valves, we have to sequentially deposit a ferromagnet, an organic, and a second ferromagnet within the pores to produce the trilayered structure where the organic acts as a spacer layer between two ferromagnetic contacts. For this purpose, we irst electrodeposit nickel within the pores from a mild acidic solution of NiSO4 · 6H20 by applying a dc bias of 1.5 V at a platinum counter-electrode with respect to the aluminum substrate. A small deposition current (∼μA) ensures well-controlled and slow-but-uniform electrodeposition of Ni

inside the pores. We had previously calibrated the deposition rate of Ni under these conditions by monitoring the deposition current during electrodeposition of Ni inside pores of known length. he deposition current increases drastically when the pores are completely illed and a nickel percolation layer begins to form on the surface. We stop the electrodeposition at this point. he deposition rate is determined by calculating the ratio of pore length to pore illing time. Using this (calibrated) deposition rate, we deposit 500 nm of Ni inside the pores. Transmission electron microscopy (TEM) characterization of these Ni nanowires showed that the wire lengths are very uniform and indeed conform to 500 nm. hese samples are air dried and then Alq3 is thermally evaporated on top of the Ni layer through a mask with a window of area of 1 mm2 in a vacuum of 10−6 Torr. he deposition rate (calibrated with the help of a crystal oscillator) is in the range 0.1–0.5 nm/s. Note that during this step, a tunnel barrier of NiO may form at the interface between Ni and Alq3. Fortunately, this unintentionally grown layer can only improve spin injection since it acts as a tunnel barrier [85]. During evaporation, Alq3 seeps into the pores by surface difusion and capillary action and reaches the nickel. he fact that Alq3 is a short-stranded organic of low molecular weight is helpful in transporting it inside the pores. he thickness of the evaporated Alq3 layer is monitored by a crystal oscillator and subsequently conirmed by TEM analysis. In this study, we prepared two sets of samples: in one set, the thickness of the Alq3 layer is 33 nm and in another set the thickness is 26 nm (see Figure 28.9). Finally, cobalt is evaporated on the top without breaking the vacuum. he resulting structure is schematically depicted in Figure 28.10. he thickness of the cobalt layer that ends up inside the pores is also 500 nm since the total pore length is ∼1 μm. hus, we fabricate an array of nominally identical spin-valve nanowires. Since the cobalt contact pad has an area of 1 mm2, approximately 2 × 108 nanowires are electrically contacted in parallel (the areal density of the nanowires is 2 × 1010 cm−2). Note that the surrounding alumina walls provide a natural encapsulation and protect the Alq3 layer from moisture contamination. For electrical measurements, gold wires are attached to the top cobalt layer and the bottom aluminum foil with silver paste. 28.5.1.2 Control Experiments and Spin-Valve Measurements From the measured sample conductance, we can estimate the number of nanowires that are electrically contacted from both ends and therefore contribute to the overall conductance. For example, the resistivity of an Alq3 thin ilm is typically 105 Ω cm at room temperature [96]. When Alq3 is conined in pores, we assume that the resistivity increases by an order of magnitude because of the increase in scattering due to charged surface states and the resulting decrease in carrier mobility. his is a typical assumption used in similar contexts [97]. herefore, the resistivity of Alq3 nanowires is 106 Ω cm. he resistivities of the ferromagnetic nanowire electrodes are ∼10−3 Ω cm [97]. hus, the resistance of a single trilayered nanowire is 1011 Ω. Since the measured resistance of a sample is typically ∼1 kΩ, we can conclude that 108 nanowires are electrically active and therefore must have contacts from

28-13

Spins in Organic Semiconductor Nanostructures

Alq3 (26 nm)

Nickel

Cobalt

10

200 nm

Current (mA)

Alq3 (33 nm)

100 nm

Cobalt

(a)

5

50 K

100 K

0

1.9 K

–5 –4

–2

0

Voltage (V)

2

4

(b)

FIGURE 28.9 Cross-sectional transmission electron micrograph of two organic spin-valve nanowires: (a) spacer layer thickness is 33 nm and (b) spacer layer thickness is 26 nm. he inset shows the measured current–voltage characteristic at diferent temperatures for the nanowires with 26 nm spacer. (Reproduced from Pramanik, S. et al., Nat. Nanotechnol., 2, 216, 2007. With permission.) Au wire

Cobalt Alq3

A l u m i n a

Alq3

1000 nm

N i c k e l 50 nm

Aluminum substrate

FIGURE 28.10 Schematic representation of the nanowire organic spin-valve array. he nanowires are hosted in the pores of an anodic alumina i lm and are electrically accessed by Au wires from both ends. he magnetic ield is directed along the axis of the nanowires. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

both ends. he contact area is 1 mm2 and the density of nanowires is 2 × 1010 cm−2. herefore, the contacts covered 2 × 108 nanowires. his means that, on the average, 50% of the nanowires end up having contacts from both ends and become electrically active. Note that since the resistivity of Alq3 is nine orders of magnitude larger than the resistivities of the ferromagnets, we will always probe the resistance of the Alq3 layer only, and not the

resistance of the ferromagnetic electrodes, which are in series with the Alq3 layer. hus, all features in the magnetoresistance and current–voltage plots accrue from the organic layer and have nothing to do with the ferromagnetic contacts. Consequently, if there are features originating from the anisotropic magnetoresistance efects in the ferromagnets, we will never see them in our experiments. his is a fortunate happenstance since this gives us conidence that any magnetoresistance feature that we observe is associated with the organic and not the ferromagnets. To further conirm that the contribution of the ferromagnetic layers to the resistance of the structure is indeed negligible, we fabricated a set of control samples without any Alq3 layer. Note that a parallel array of 2 × 108 Ni/Co bilayered nanowires contacted by Al at the bottom and a thin ilm of Co at the top with area 1 mm2 would produce a resistance of ∼25 μΩ, which is below the sensitivity of our measurement apparatus. herefore, we made control samples where we probe only ∼500 nanowires. he trick employed to achieve this was to remove the barrier layer incompletely from the bottom intentionally, so that only a small fraction of the pores opened up from the bottom. We measure a resistance of ∼10 Ω in the control samples at room temperature, which tells us that about ∼500 nanowires are electrically probed. he magnetoresistances of the control samples were measured over a magnetic ield range of 0–6 kOe and at a temperature of 1.9 K. he magnetic ield was directed along the axis of the nanowires. A typical trace is shown in Figure 28.11. We observe a featureless monotonic positive magnetoresistance δR(|B|) which accrues either from the anisotropic magnetoresistance efect associated with the ferromagnetic contacts or from the magnetoresistance of the aluminum substrate. However, the maximum value of δR(|B|) that we observed over the entire measurement range was only ∼0.08 Ω, which is more than an order of magnitude smaller than the resistance peak ΔR measured in the trilayered structures (see later). hus, the resistance peak measured in the trilayered structures undoubtedly

28-14

Handbook of Nanophysics: Principles and Methods 1.9 K, 10 μA

8.49 8.48

Resistance (Ω)

8.47 8.46 8.45 8.44 8.43 8.42 8.41 8.40 –6

–4

–2

0

2

4

6

Magnetic field (Oe)

FIGURE 28.11 Magnetoresistance trace of the control sample consisting of ∼500 Co–Ni bilayered nanowires (no organic spacer). No spin-valve peaks are visible in the data as expected. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

originates from the spin-valve efect and has nothing to do with either the anisotropic magnetoresistance associated with the ferromagnetic contacts or the magnetoresistance of the aluminum substrate. We fabricated ∼90 trilayered samples using the procedure described earlier. Room-temperature resistances of these samples range from 1–10 kΩ depending on the number of nanowires that are electrically contacted from both ends (this number

Number of samples

25

20

15

1048.5 1048.0 1047.5 1047.0 1046.5 1046.0 1045.5 1045.0 1044.5 1044.0 –6

28.5.2 Calculation of Spin Relaxation (or Spin Diffusion) Length L s Figures 28.14 and 28.15 show the positive and negative spin-valve signals, respectively, measured at diferent temperatures. he

1.9 K, 10 μA

1523

1.9 K, 10 μA

1522

Resistance (Ω)

Resistance (Ω)

30

varies because the process of barrier layer removal is not precisely controllable). he magnetoresistance of these samples was measured in a quantum design physical property measurement system (which has a superconducting magnet housed within a cryostat) with an ac bias current of 10 μA rms over a temperature range 1.9–100 K and over a magnetic ield range of 0–6 kOe. he measured distribution of spin-valve signal ΔR/R is shown in Figure 28.12. he distribution is very broad and peaks near zero, i.e., most samples do not exhibit any measurable spin-valve signal. Among the remaining samples, some exhibit positive spin-valve signals (peaks) and others exhibit negative signals (troughs). he insets of Figure 28.12 show the magnetoresistance traces for the highest positive and negative spin-valve signals that we have measured among all samples tested. In every sample, the spin-valve peak always occurs between the coercive ields of Ni (∼800 Oe) and Co (∼1800 Oe) nanowires, as expected. Surprisingly, we found that the coercive ields do not vary signiicantly from sample to sample, indicating that the variation of coercive ields between diferent nanowires, and therefore diferent samples, is extremely small. he magnetoresistances of the devices exhibiting the inverse spin-valve efect typically saturate at low ields (∼0.2 T in the igure shown), but those of devices exhibiting the normal spin-valve efect tend to saturate at much higher ields (see Figure 28.13).

–4

–2

0

2

4

Magnetic field (kOe)

1521 1520 1519 1518 1517

6

–6

–4

–2

0

2

4

6

Magnetic field (kOe)

10

5

0 –0.4

–0.3

–0.2

–0.1

0.0

0.1

(RAP – RP)/(RAP + RP) in %

FIGURE 28.12 Histogram showing the distribution of spin-valve signal strength collected from 90 samples. Some samples show a positive and the rest a negative spin-valve signal. All data were collected with a bias current of 10 mA and at a temperature of 1.9 K. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

28-15

Spins in Organic Semiconductor Nanostructures 1530

1538

0°

0° 1536

1526

Resistance (Ω)

Resistance (Ω)

1528

1524 1522 1520

90°

1534 1532 1530 90° 1528

1518 1516 –75000 –37500 0 37500 (a) Magnetic field (Oe)

75000

1526 –75000 –37500 0 37500 Magnetic field (Oe) (b)

75000

1660

1590 0°

1658

1586

Resistance (Ω)

Resistance (Ω)

1588

1584 1582

1656 1654 1652

1580 90° 1578 –75000 –37500 0 37500 Magnetic field (Oe) (c)

1650 –75000 –37500 0 37500 (d) Magnetic field (Oe)

75000

75000

FIGURE 28.13 Magnetoresistance of organic nanowire spin valves with diferent magnetic ield orientations and at diferent temperatures. (a) Magnetoresistance of Ni–Alq3–Co nanowires at T = 1.9 K for various angles between ield and nanowire axis. (b) Magnetoresistance of Ni–Alq3–Co nanowires at T = 50 K (large ield scan) for various angles between magnetic ield and wire axis. (c) Magnetoresistance of Ni–Alq3–Co nanowires at T = 100 K (large ield scan) for various angles between magnetic ield and the wire axis. (d) Magnetoresistance of Ni–Alq3–Co nanowires at T = 250 K (large ield scan). Here magnetic ield is along the wire axis.

1584 1530

1582

Resistance (Ω)

Resistance (Ω)

100 K

1580

50 K

1527

1524

1.9 K

1521

1518 1578 –6 (a)

–4

–2 0 2 Magnetic ield (kOe)

4

6

–6 (b)

–4

–2 0 2 Magnetic field (kOe)

4

6

FIGURE 28.14 Magnetoresistance traces of spin-valve nanowires with 33 nm of Alq3 layer. he magnetic ield is directed along the axis of the nanowire. he solid and broken arrows indicate reverse and forward scans of the magnetic ield. (a) For a measurement temperature of 100 K and (b) for 1.9 and 50 K. he parallel and antiparallel conigurations of the ferromagnetic layers are shown within the corresponding magnetic ield ranges. (Reproduced from Pramanik, S. et al., Nat. Nanotechnol., 2, 216, 2007. With permission.)

28-16

Handbook of Nanophysics: Principles and Methods

1.9 K, 10 μA

1046

1044

–6

–4

(a)

–2 0 2 4 Magnetic field (kOe)

3 K, 10 μA

1046 Resistance (Ω)

Resistance (Ω)

1048

1044

1042 –6

6

1038

–2 0 2 4 Magnetic field (kOe)

6

1034 15 K, 10 μA Resistance (Ω)

10 K, 10 μA Resistance (Ω)

–4

(b)

1036

1032

1034 –6 (c)

–4

–2 0 2 4 Magnetic field (kOe)

1030 –6

6 (d)

–4

–2 0 2 4 Magnetic field (kOe)

6

FIGURE 28.15 Inverse spin-valve efect and background negative magnetoresistance in Ni–Alq3–Co nanowires at four diferent temperatures and ixed bias current (10 μA). (a) 1.5 K, (b) 3 K, (c) 10 K, and (d) 15 K. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.) 8.5 Spin relaxation length (nm) in Alq3 spacer, λs(η)

bias current is kept constant at 10 μA rms in both cases. From the relative height of the spin-valve peak ΔR/R, we can extract the spin dif usion length in the Alq3 layer following the technique outlined in Section 28.3.3. We irst assume that the spin polarization at the Fermi energy of the injecting ferromagnetic contact is P1 and that there is no loss of spin polarization at the interface between Alq3 and the injecting contact because of the so-called self-adjusting capability of the organic [98] invoked in [78]. he self-adjusting capability is a “proximity efect” in which the region of the organic in contact with a ferromagnet becomes spin polarized up to a short distance (few lattice constants) into the organic. As a result, there is no abrupt loss of spin polarization at the interface. It turns out, however, that the measured spin dif usion length is not particularly sensitive to the spin polarization of the contacts, so that even if there were any abrupt loss of spin polarization at the interface, it would not afect our result signiicantly. Figure 28.16 justiies this claim. Next, we assume, that there is a thin Schottky barrier at each organic/ferromagnet interface. Injected carriers tunnel through the irst interface, which is too thin to cause spin randomization. Ater this tunneling, the carriers drit and dif use through the remainder of the organic layer, with exponentially decaying spin polarization P1 exp[−(d − d 0)/L s(T)], where d is the total width of the organic layer, d 0 is the total width of the two Schottky barriers, and Ls(T) is the spin dif usion length in Alq3 at a temperature T. Finally, these carriers arrive at the detecting contact where there is a second Schottky barrier, through which they tunnel to cause the current. In our structures, d0 |HNi| and inversion of the injector’s spin polarization has occurred owing to resonant tunneling through an impurity somewhere in the channel. he spin-valve signal is negative. We assume that the impurity was closer to the Ni contact so that its polarization has lipped and the spins injected by the Ni efectively have a polarization opposite to the magnetization of the Ni electrode as shown. Owing to the high magnetic ield, the spin depolarization rate is high and the spins are completely depolarized by the time they reach the Co contact. herefore, 50% of the spins will transmit through the Co contact and contribute to current. Let the device resistance be R1. (b) When the magnetic ield is decreased, the depolarization rate decreases and hence less than 50% of the spins have their polarizations aligned along the magnetization of the Co contact and transmit. Let the resistance now be R2 which would be less than R1. his will cause negative magnetoresistance. hus, the background magnetoresistance is negative whenever the spin-valve signal is negative. (c) Again, H > |HCo| > |HNi| but no inversion of the spin polarization in Nickel takes place and hence spin-valve signal is positive. he high magnetic ield depolarizes the spins and 50% conduct at the Co contact so that the device resistance is now R1′. (d) When the ield is reduced, the depolarization rate decreases so that more than 50% of the spins are aligned with the Co contact’s magnetization and transmit. Let the device resistance be R2′ which is less than R1′. his will give rise to positive magnetoresistance. Hence, the sign of the magnetoresistance is always the same as the sign of the spin-valve signal, which is what we experimentally observe over 90 samples. (Reproduced from Pramanik, S. et al., Phys. Rev. B, 74, 235329, 2006. With permission.)

cause. We have always observed correlation, and never observed anticorrelation, in all our experiments (∼90 samples, multiple traces.) herefore, we believe the mechanism suggested here is indeed the likely cause. Further experiments, of course, are needed to conirm it beyond all reasonable doubt.

28.6 The Transverse Spin Relaxation Time in Organic Molecules: Applications in Quantum Computing here is an emerging consensus among the quantum information processing community that the ideal vehicle to host a “quantum bit” (or qubit) in a solid-state rendition of a quantum computer is an electron’s or nucleus’ “spin,” as opposed to “charge.” his is because spin is more robust than charge. he primary mechanism for corrupting a qubit and destroying the information contained therein is decoherence that takes place when the qubit couples to its environment. Decoherence rate is measured by the coherence time; the shorter it is, the higher is the decoherence rate. Fortunately, electron spin coherence times in solids can be much longer than the charge coherence times. Spin coherence times longer than 1 μs at room temperature have been demonstrated in nitrogen vacancies in diamond [103,104], whereas the charge coherence time saturates to only ∼1 ns in solids as the temperature is lowered to the milli-Kelvin range [105]. herefore, spin is clearly superior to charge in terms of the robustness against decoherence. Having established that, the next important question would be as follows: What is the minimum (spin) coherence time that is required to allow fault-tolerant quantum computing? his question was answered by Knill in a seminal work [106]. Using quantum error correction theory, he demonstrated that it is possible to detect and correct qubit occurs (caused by decoherence) using quantum error correction algorithms if the error probability remains below 3%. Actually, the only errors that matter are the ones that occur within a clock period, since at the end of the clock period, the spin is intentionally rotated to execute quantum algorithms. If the clock period is T, then the probability of a qubit decohering during this period is Pe = 1 − e −T /T2 ,

(28.12)

where T2 is the decoherence time. In the case of spin, this time is the so-called transverse spin relaxation time. Setting Pe = 0.03 and then inverting Equation 28.12, we can see immediately that fault-tolerant quantum computing becomes possible if T2 > 33T

(28.13)

hus, the transverse spin relaxation time does not have to be inordinately long; it merely has to exceed the clock period by about 33 times. he faster the clock period, the shorter can the T2 time be and yet allow fault-tolerant quantum computing. It then behooves us to estimate the fastest clock that will be practical in spin-based quantum computing. he clock period must remain larger than the time it takes an external agency to rotate the spin by 180°. Spins are typically rotated by irst splitting spin levels with a static (dc) magnetic ield using the Zeeman efect, and

28-21

Spins in Organic Semiconductor Nanostructures

then applying an ac magnetic ield (usually from a microwave generator) whose frequency is resonant with the Zeeman splitting energy to induce Rabi oscillation [107]. h is rotates the spin by an angle θ given by θ=

g μ B Bac τ, ℏ

(28.14)

where g is the Landé g-factor μB is the Bohr magneton ħ is the reduced Planck’s constant Bac is the amplitude of the ac magnetic lux density τ is the duration for which the resonance is maintained (or the ac magnetic ield is kept on) hus, by varying τ, one can rotate the spin through arbitrary angles. his is known as “single qubit rotation” and is one of the two ingredients necessary to form a universal quantum gate. he other ingredient is a 2-qubit “square-root-of-swap” operation [108]. Since the maximum angle that the spin needs to be rotated through is 180°, the maximum value of τ, which is the minimum clock period, is Tmin = τ max =

h . 2 g μ B Bac

(28.15)

Time varying magnetic lux densities of amplitude 500 Gauss are available in standard electron spin resonance spectrometers [109]. If we apply a lux density of that magnitude to rotate spin using Rabi oscillations, then Tmin = 0.36 ns. his is the minimum clock period.* Hence, from Equation 28.13, we need T2 = 11.8 ns at least. here are many systems where the spin coherence time (or transverse relaxation time) exceeds 11.8 ns by a large margin. However, we will be particularly interested in organic molecules for two reasons: (1) First, it has been shown that organic molecules allow very high gate idelity, as high as 98% [15]. Selective rotation of a target qubit usually requires electrical or optical gating. An example of electrical gating can be found in Ref. [110]. If we want to rotate the qubit in a targeted host, while leaving the qubits in all other hosts unafected, we can either apply the ac magnetic ield to the target host alone, or apply a global ac magnetic ield but make the spin splitting in only the target host resonant with the global ac magnetic ield. he former is practically impossible since conining a microwave ield (with a wavelength of few cm) to a host of size ∼10 nm is nearly impossible. In the latter approach, we apply a global dc magnetic ield to induce a Zeeman splitting in every host, but then apply an electric ield to the target host only (using “gates”) to ine-tune the spin splitting in that host and make it resonant with the global ac magnetic ield. he electric ield increases the spin splitting energy in the target host by virtue of the Rashba spin–orbit coupling efect [111] and makes * he clock frequency will then be 2.8 GHz.

it resonant with the global ac magnetic ield. hus, the spin is rotated in the selected host only. It is also possible to rotate a spin using just an ac electric ield (applied through a gate) instead of an ac magnetic ield. Coherent spin rotations using this approach has been demonstrated on times scales of ∼50 ns [112] and also less than 1 ns [113]. However, in both cases, the application of the gate potential can disrupt the qubit. A high gate idelity keeps this disruption to a minimum. It has been shown that some organic molecules are best suited to retain a high degree of gate idelity [15]. (2) Second, optically active organic molecules, like Alq3, will allow for a simple and elegant qubit readout scheme. Once the quantum computation is over, the inal result has to be read out, i.e., the polarization of the electron spin has to be determined. he act of reading collapses the qubit to a classical bit, so that the inal spin polarization will be either aligned along a chosen axis (“up” direction representing the bit 1) or anti-aligned (“down” direction representing the bit 0). In order to read which of these two polarizations has been assumed by the electron spin, we can use the following scheme [16]. Using a p-type dilute magnetic semiconductor like GaAs, magnetized in the “up” direction, we inject a spin-polarized hole into the Alq3 host. In the organic, only the singlet excitons recombine radiatively while the triplet excitons are dark and do not recombine radiatively. hat means a photon will be emitted only if the spin of the electron in the organic and the spin of the injected hole are antiparallel. Since the spin of the injected hole is known, we can determine the spin polarization of the electron (and hence read the collapsed qubit) by monitoring light emission from the organic. his readout scheme has no analog in inorganics. Based on the above, we undertook a study of the prospect of using Alq3 as a qubit host. he only requirement was that the transverse spin relaxation time (T2 time) had to exceed 11.8 ns at a reasonable temperature, preferably room temperature. We therefore carried out experiments to determine this time as a function of temperature. Unfortunately, it is very diicult to measure the single particle T2 time directly in any system (including Alq3 molecules) since it requires complicated spin echo sequences. herefore, we have measured the ensemble-averaged T2* time instead, since it can be ascertained easily from the line width of electron spin resonance spectrum. his time, however, is orders of magnitude shorter than the actual T2 time of an isolated spin because of additional decoherence caused by interactions between multiple spins in an ensemble [114,115]. It is particularly true of organics where spin–spin interaction is considered to be the major mechanism for spin decoherence [2]. Consequently, bulk samples (where numerous spins interact with each other) should behave diferently from one or few molecules containing fewer interacting spins. In the rest of the chapter, we will designate the T2* times of bulk and few-molecule samples as T2b and T2f , respectively. We have found that they are discernibly diferent. In order to prepare samples containing one or few molecules, we followed a time-honored technique adapted from Ref. [116]. We irst produced a porous alumina i lm with 10 nm pores by anodizing an aluminum foil in 15% sulfuric acid. A two-step

28-22

Handbook of Nanophysics: Principles and Methods

here are two magnetic ields at which the resonance condition is satisied, which means that there are efectively two different g-factors for spins in Alq3. hese two g-factors are 2 and 4 [120]. Ref. [120] determined from the temperature dependence of the ESR intensity that the g = 4 resonance is associated with spins of localized electrons in Alq3 (perhaps attached to an impurity or defect site) while the g = 2 resonance is associated with quasi-free (delocalized) electrons whose wavefunctions spread over multiple atoms. From the measured linewidths of these two resonances, we can estimate the T2f and T2b times for each resonance individually using the following standard formula:

Alumina

Pore Nanovoid

T2f or T2b =

10 nm

FIGURE 28.21 Cross-sectional TEM of the pores showing a nanovoid. (Reproduced from Kanchibotla, B. et al., Phys. Rev. B, 78, 193306, 2008. With permission.)

anodizing process was employed to improve the regimentation of the pores [117]. hese porous i lms were then soaked in 1,2-dichloroethane (C2H4Cl2) solution of Alq3 for over 24 h to impregnate the pores with Alq3 molecules. he i lms were subsequently rinsed several times in pure C2H4Cl2 to remove excess Alq3. here are cracks of size 1–2 nm in the anodic alumina i lm produced in sulfuric acid [116,118,119]. In Figure 28.21, we show a cross-sectional transmission electron micrograph of the porous i lm where this is clearly visible. Ref. [116] claims that when the anodic alumina ilm is soaked in Alq3 solution, Alq3 molecules of 0.8 nm size difuse into the cracks and come to rest in the nanovoids. Since the cracks are only 1–2 nm wide and the nanovoids have diameters of 1–2 nm, at best 1–2 molecules of Alq3 can it inside the nanovoids. Surplus molecules, not in the nanovoids, will be removed by repeated rinsing in C2H4Cl2 [116]. C2H4Cl2 completely dissolves out all the Alq3 molecules, except those in the nanovoids, because the C2H4Cl2 molecule cannot easily difuse through the 1–2 nm wide nanocracks to reach the nanovoids. herefore, ater the repeated rinsing procedure is complete, only the nanovoids will contain isolated clusters of 1–2 molecules. he nanovoids are suiciently far from each other that interaction between them is negligible [116]. herefore, if we use the fabrication technique of Ref. [116], we will be conining one or two isolated molecules in nanovoids and measuring their T2f times. In contrast, the T2b times are measured in bulk Alq3 powder containing a very large number of interacting molecules. In electron spin resonance experiments, we apply a microwave ield of i xed frequency ω to the spins while lit ing the spin degeneracy by applying a dc magnetic ield Bdc. When the resonance condition ħω = gμBBdc is attained, the microwave is absorbed. From the absorption linewidth, we can determine the T2* time.

1 re ( g /2) 3 ΔB pp

(28.16)

where re is a constant = 1.76 × 107(G − s)−1 g is the Landé g-factor ΔBpp is the full-width-at-half-maximum of the ESR line shape (the linewidth) We checked that the line shape is almost strictly Lorentzian, so that the above formula can be applied with conidence [121]. Figure 28.22 shows typical magnetic ield derivatives of the ESR spectrum obtained at a temperature of 10 K corresponding to g = 2 and g = 4 resonances. here are three curves in each igure corresponding to the blank alumina host, bulk Alq3 powder, and Alq3 in 1–2 nm voids (labeled “quantum dots”). he alumina host has an ESR peak at g = 2 and g = 4 (possibly due to oxygen vacancies) [122], but they are both much weaker than the resonance signals from Alq3 and hence can be easily separated. Note that the g-factor of the isolated Alq3 molecules in nanovoids is slightly larger than that of bulk powder since the resonance occurs at a slightly higher magnetic ield. In Figure 28.23, we plot the measured T2f and T2b times (associated with the resonance corresponding to g = 2) as functions of temperature from 4.2 to 300 K. he inequality T2b < T2f is always satisied except at one anomalous data point at 4.2 K. Two features stand out: (1) First, both T2f and T2b are relatively temperature independent over the entire range from 4.2 to 300 K. his indicates that spin–phonon interactions do not play a signiicant role in spin dephasing; (2) Second, both T2f and T2b times are quite long, longer than 3 ns, even at room temperature. In Figure 28.24, we plot the measured T2f and T2b times as functions of temperature corresponding to the g = 4 resonance. he T2f time is plotted from 4.2 to 300 K, but the T2b time in bulk powder can only be plotted up to a temperature of 100 K. Beyond that, the intensity of the ESR signal fades below the detection limit of our equipment. he important features are as follows: (1) T2f and T2b are no longer temperature independent unlike in the case of the g = 2 resonance. T2f decreases monotonically with increasing temperature and falls by a factor of 1.7 between 4.2 and 300 K, (2) T2b < T2f and the ratio T2f /T2b decreases with increasing temperature. he maximum value of the ratio T2f / T2b is 2.4,

28-23

Spins in Organic Semiconductor Nanostructures ESR of Alq3 at 10 K for g = 2 400

T *2 vs temperature for Alq3 QD’s and bulk for g = 2

5.0

Alq3 in 10 nm pores Alq3 powder Blank pores

Alq3 quantum dots Bulk Alq3

4.5 4.0

200 T2* (ns)

3.5 T *2 (ns)

0

3.0 2.5

–200

2.0 –400

1.5 3000

3100

3200

(a)

3300

3400

3500

3600

1.0

Magnetic field (Gauss) ESR of Alq3 at 10 K for g = 4 Alq3 powder Blank porous 10 nm templates Alq3 in 10 nm pores

0.36 0.34 0.32

50

75 100 125 150 175 200 225 250 275 300 Temperature (K)

T *2 vs temperature for Alq3 QD’s and bulk for g = 4 Alq3 quantum dots Alq3 bulk

0.30 0.28

1000 (b)

25

FIGURE 28.23 he ensemble-averaged transverse spin relaxation time as a function of temperature for the g = 2 resonance. (Reproduced from Kanchibotla, B. et al., Phys. Rev. B, 78, 193306, 2008. With permission.)

T 2* (ns)

22 20 18 16 14 12 10 8 6 4 2 0 –2 –4 –6 –8 –10 –12

0

1200

1400

1600

1800

2000

Magnetic field (Gauss)

FIGURE 28.22 First derivative of the electron spin resonance signal as a function of the dc magnetic ield. (a) for g = 2 resonance and (b) for g = 4 resonance. (Reproduced from Kanchibotla, B. et al., Phys. Rev. B, 78, 193306, 2008. With permission.)

occurring at the lowest measurement temperature of 4.2 K, and (3) both T2f and T2b times are about an order of magnitude shorter for the g = 4 resonance compared to the g = 2 resonance. he strong temperature dependence of T2f and T2b tells us that for g = 4 resonance, spin–phonon coupling causes spin dephasing instead of spin–spin interaction. he spin–phonon coupling is absent or signiicantly suppressed for the g = 2 resonance, which is why T2f and T2b are an order of magnitude longer and also temperature independent for g = 2. Ref. [120] has ascribed the g = 2 resonance to quasi-free carrier spins in Alq3 (whose wavefunctions are extended over an entire molecule) and g = 4 resonance to localized spins (whose wavefunctions are localized over an impurity atom). If that is the case, then it is likely that the localized spins and the delocalized spins will have very

0.26 0.24 0.22 0.20 0.18 0.16 0.14 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 Temperature (K)

FIGURE 28.24 he ensemble-averaged transverse spin relaxation time as a function of temperature for the g = 4 resonance. (Reproduced from Kanchibotla, B. et al., Phys. Rev. B, 78, 193306, 2008. With permission.)

diferent couplings to phonons since their wavefunctions are very diferent.

28.6.1 Application in Quantum Computing We started this section by alluding to the suitability of Alq3 molecules for quantum computing applications and mentioned that the requirement is that the single particle T2 time should exceed 11.8 ns. he ensemble-averaged T2* time was measured to be about

28-24

Handbook of Nanophysics: Principles and Methods

3 ns (up to room temperature), while we could not directly measure the single particle T2 time. However, it is entirely reasonable to assume that for a single isolated spin in Alq3, T2 should be at least an order of magnitude longer than T2* [114,115] particularly when spin–spin interaction is the major dephasing mechanism (g = 2). herefore, we expect that the single spin T2 time will be at least 30 ns up to room temperature. his exceeds 11.8 ns and hence meets Knill’s criterion for fault-tolerant quantum computing. We emphasize that Alq3 does not have exceptionally long T2 times, but it is still adequate for fault-tolerant quantum computing. Nitrogen vacancy NV− in diamond exhibits a much longer T2 time of several tens of μs at room temperature [103,104]. However, quantum computing paradigms based on NV− require optical gating [123,124] or cavity dark states [125] since it would be nearly impossible to place an electrical gate on top of an atomic vacancy using any of the known fabrication methods. As a result, NV− computers are not truly miniaturizable since the gate is not miniaturizable. In contrast, the spins in Alq3 are not bound to speciic atomic sites. Instead, they extend over molecules of size ∼1 nm, which may allow electrical gating and therefore lends itself to miniaturized quantum processors. Inorganic semiconductor qubit hosts that will also allow electrical gating and are miniaturizable, typically have a shorter T2* time than Alq3 at room temperature [126]. herefore, the Alq3 system deserves due attention from the quantum information community. It is attractive since Alq3-based quantum processors (1) are scalable, (2) are capable of fault-tolerant operation at room temperature, (3) possibly have a high degree of gate idelity, and (4) lend themselves to an elegant qubit readout scheme. All this makes them attractive candidates for quantum computers.

28.7 A Novel Phonon Bottleneck in Organics? he traditional phonon bottleneck efect [17], found in inorganic nanostructures such as quantum dots, is a consequence of quantum coninement of electrons and phonons. he walls of the quantum dot conines the delocalized electron wavefunction, which discretizes the electron energy, allowing the electron to exist only in very speciic energy eigenstates. he allowed energy states are determined entirely by the size and shape of the quantum dot. When an electron in the quantum dot absorbs or emits a phonon to make a transition from one energy state to another, both energy and momentum have to be conserved, which requires that the absorbed or emitted phonons have very speciic energy and wavevector. Actually, in very small quantum dots, strict momentum conservation will not be required because of the Heisenberg Uncertainty Principle, but energy conservation is still required, so that E final − Einitial = ± ℏω,

(28.17)

where Einitial and Einal are the energies of the initial and i nal energy states ħω is the phonon energy (the plus sign stands for absorption and the minus sign for emission) Phonons of this energy must be allowed inside the dot, i.e., they must belong to allowed phonon modes. Now, if the phonons are also conined with the dot, then the phonon modes may be discretized as well, and phonons of arbitrary energy may not be available. If a phonon of energy ħω is not available, then the corresponding electronic transition becomes forbidden and will not occur. his is the well-known phonon bottleneck efect that suppresses electronic transitions (including inelastic spindephasing transitions) in inorganic quantum dots. In organic molecules, there is no quantum coninement efect on the electrons since the electron wavefunction is localized over individual atoms or molecules, which are typically much smaller than the size of the nanostructure housing the molecule. herefore, the conining nanostructure (nanovoids in our case) has no inluence on the allowed electronic energy states, which are the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) states of the molecule. However, any inelastic spin-dephasing transition will still require emission or absorption of a phonon of speciic energy in order to conserve energy. Unlike the electrons, the phonons are delocalized over the entire nanovoid so that the walls of the nanovoid will conine the phonons and discretize the phonon modes. If the phonon of the right energy is not available because it is not contained within the allowed modes, then the spin-dephasing electronic transition will be suppressed, resulting in an increase in the spin-dephasing time or T2 time. his too is a “phonon bottleneck efect” but somewhat diferent from the traditional one. It is diferent because it is the result of phonon coninement alone, without any accompanying electron coni nement caused by the nanostructure. his unconventional phonon bottleneck efect can explain why T2f is considerably longer than T2b for the g = 4 resonance. he bulk sample has many more interacting spins than the fewmolecule sample, but if spin–spin interaction is overshadowed by spin–phonon coupling (as is the case for g = 4 resonance), then this should not make any diference. However, only the fewmolecule samples are housed in 1–2 nm sized nanovoids and are subjected to the phonon bottleneck efect. Consequently, only they experience a suppression of the inelastic spin-dephasing transitions. hat can make T2f > T2b , which is exactly what we observe. he bottleneck will be more severe at lower temperatures since fewer phonon modes will be occupied (Bose–Einstein statistics) so that the diference between T2b and T2f will be exacerbated at lower temperatures. his is precisely what we found. If this explanation is true, it will be the irst observation of this efect in organic molecules. We raise the specter of phonon bottleneck only as a possibility, but cannot conirm it experimentally beyond all reasonable doubt since that would require showing progressive suppression of dephasing with decreasing

28-25

Spins in Organic Semiconductor Nanostructures

nanovoid size, something that is experimentally not accessible. Nonetheless, we believe that there is a strong suggestion for the phonon bottleneck efect.

sponsored by the U.S. Air Force Oice of Scientiic Research under grant FA9550-04-1-0261 and the U.S. National Science Foundation under Grants ECCS-0608854 and CCF-0726373.

28.8 Conclusion

References

In this chapter, we have discussed some intriguing spin properties of the π-conjugated optically active organic semiconductor Alq3. We have (1) shown that the longitudinal spin relaxation time (T1) is exceptionally long (∼1 s) and relatively temperature independent from 1.9–100 K, (2) identiied the likely dominant spin relaxation mechanism in the organic as the Elliott–Yafet mechanism, (3) reported an intriguing correlation between the sign of the spin-valve signal and the background monotonic magnetoresistance, based on which we have proposed a likely origin of the background magnetoresistance, (4) demonstrated that the transverse spin relaxation time (T2) is long enough to satisfy Knill’s criterion for fault-tolerant quantum computing at room temperature, (5) proposed the Alq3 molecule as a potential host for spin-based qubits, along with a simple and elegant scheme for qubit readout, and (6) showed some experimental results hinting at a possible phonon bottleneck efect in few-molecule samples of Alq3 conined in 1–2 nm spaces. Finally a comment on the importance of long spin relaxation time (T1) in opto-spintronics is in order. It is oten claimed that OLEDs will capture 50% of the global display market by 2015, since these are inexpensive compared to semiconductor (inorganic) LEDs, and can be produced on lexible substrates. he OLED consists of a p–n junction diode, just like an inorganic LED, with one diference: the p-type region is a hole transport layer and the n-type region is an electron transport layer. Alq3 is an important electron transport layer used in OLEDs. In OLEDs, the electron–hole pairs form excitons, which recombine to produce photons or light. Because of the valley degeneracies in the HOMO level of organic molecules, 75% of the excitons formed are triplets and 25% are singlets. Only the singlets recombine radiatively to produce photons, while the triplets recombine non-radiatively to produce phonons and are wasted. herefore, the maximum eiciency is limited to meager 25%. his can be changed if we inject spin-polarized carriers into the electron and hole transport layers to produce only singlets. In that case, the maximum eiciency can be 100%, resulting in brighter OLEDs. For all this to happen, it is necessary that the spin relaxation time exceed the exciton lifetime (or radiative recombination time) considerably. hat will ensure that the singlets remain as singlets until they recombine. For this purpose, long spin relaxation times are very desirable. Our work shows that long spin relaxation times are indeed possible in optically active organics like Alq3.

Acknowledgments Much of the work described in this chapter was carried out in collaboration with the group of Professor Marc Cahay at the Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio. Elements of this work were

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89. S. Pramanik, S. Bandyopadhyay, K. Garre, and M. Cahay, Normal and inverse spin-valve efect in organic semiconductor nanowires and the background magnetoresistance, Physical Review B 74 (2006), 235329. 90. V. Pokalyakin, S. Tereshin, A. Varfolomeev, D. Zaretsky, A. Baranov, A. Banerjee, Y. Wang, S. Ramanathan, and S. Bandyopadhyay, Proposed model for bistability in nanowire nonvolatile memory, Journal of Applied Physics 97 (2005), 124306. 91. B. Kanchibotla, S. Pramanik, and S. Bandyopadhyay, Self assembly of nanostructures using nanoporous alumina templates, Chapter 9 in Nano and Molecular Electronics Handbook, Ed. S. Lyshevski (CRC Press, Boca Raton, FL, 2007). 92. S. Bandyopadhyay, A. Miller, H. Chang, G. Banerjee, V. Yuzhakov, D. Yue, R. Ricker, S. Jones, J. Eastman, E. Baugher, and M. Chandrasekhar, Electrochemically assembled quasiperiodic quantum dot arrays, Nanotechnology 7 (1996), 360. 93. S. Pramanik, B. Kanchibotla, S. Sarkar, G. Tepper, and S. Bandyopadhyay, Electrochemical self-assembly of nanostructures: Fabrication and device applications, in the Encyclopedia of Nanoscience and Nanotechnology, 2nd edn., Ed. H. S. Nalwa (to appear). 94. O. Rabin, P. Herz, S. Cronin, Y. Lin, A. Akinwande, and M. Dresselhaus, Nanofabrication using self-assembled alumina templates, Materials Research Society Symposium 636 (2001), D 4.7.1. 95. T. Ohgai, X. Hofer, L. Gravier, J. Wegrowe, and J. Ansermet, Bridging the gap between template synthesis and microelectronics: Spin-valves and multilayers in self-organized anodized aluminium nanopores, Nanotechnology 14 (2003), 978. 96. A. Mahapatro, R. Agrawal, and S. Ghosh, Electric-ieldinduced conductance transition in 8-hydroxyquinoline aluminum (Alq3), Journal of Applied Physics 96 (2004), 3583. 97. S. Pramanik, C. Stefanita, and S. Bandyopadhyay, Spin transport in self-assembled all-metal nanowire spin-valves: A study of the pure Elliott-Yafet mechanism, Journal of Nanoscience and Nanotechnology 6 (2006), 1973. 98. J. Xie, K. Ahn, D. Smith, A. Bishop, and A. Saxena, Ground state properties of ferromagnetic metal/conjugated polymer interfaces, Physical Review B 67 (2003), 125202. 99. E. Tsymbal, O. Mryasov, and P. LeClair, Spin dependent tunneling in magnetic tunnel junctions, Journal of Physics: Condensed Matter 15 (2003), R109. 100. B. Chen, W. Lai, Z. Gao, C. Lee, S. Lee, and W. Gambling, Electron drit mobility and electroluminescent eiciency of tris(8-hydroxyquinolinolato) aluminum, Applied Physics Letters 75 (1999), 4010. 101. M. Cahay and S. Bandyopadhyay, Conductance modulation of spin interferometers, Physical Review B 68 (2003), 115316.

Handbook of Nanophysics: Principles and Methods

102. M. Cahay and S. Bandyopadhyay, Phase-coherent quantum mechanical spin transport in a weakly disordered quasione-dimensional channel, Physical Review B 69 (2004), 045303. 103. T. A. Kennedy, J. S. Colton, J. E. Butler, R. C. Linares, and P. J. Doering, Long coherence time at 300 K for nitrogen vacancy center spins in diamond grown by chemical vapor deposition, Applied Physics Letters 83 (2003), 4190. 104. F. Jelezko, T. Gaebel, I. Popa, A. Gruber, and J. Wrachtrup, Observation of coherent oscillations in a single electron spin, Physical Review Letters 92 (2004), 076401. 105. P. Mohanty, E. M. Q. Jariwalla, and R. A. Webb, Intrinsic decoherence in mesoscopic systems, Physical Review Letters 78 (1997), 3366. 106. E. Knill, Quantum computing with realistically noisy devices, Nature (London) 434 (2005), 39. 107. I. I. Rabi, N. F. Ramsey, and J. Schwinger, Use of rotating coordinates in magnetic resonance problems, Reviews of Modern Physics 26 (1954), 167. 108. G. Burkard, D. Loss, and D. P. DiVincenzo, Coupled quantum dots as quantum gates, Physical Review B 59 (1999), 2070. 109. A. Akhkalkasti, T. Gegechkori, G. Mamniashvili, Z. Shermadini, A. N. Pogorely, and O. M. Kuzmak, Inluence of pulsed magnetic ield on single- and two-pulse nuclear spin echoes in multidomain magnets, arXiv:0705.3979. 110. S. Bandyopadhyay, Self assembled nanoelectronic quantum computer based on the Rashba efect in quantum dots, Physical Review B 61 (2000), 13813. 111. D. Bhowmik and S. Bandyopadhyay, Gate control of the spin-splitting energy in a quantum dot: Applications in single qubit rotation, Physica E 41 (2009), 587. 112. K. C. Nowack, F. H. L. Koppens, Yu. V. Nazarov, and L. M. K. vandersypen, Coherent control of single electron spins with electric ields, Science 318 (2007), 1430. 113. Y. Kato, R. C. Meyers, D. C. Driscoll, A. C. Gossard, J. Levy, and D. D. Awschalom, Gigahertz electron spin manipulation using voltage controlled g-tensor modulation, Science 299 (2003), 1201. 114. R. De Sousa and S. Das Sarma, Electron spin coherence in semiconductors: Considerations for a spin based quantum computing architecture, Physical Review B 67 (2003), 033301. 115. X. Hu, R. De Sousa, and S. Das Sarma, Decoherence and dephasing in spin based solid state quantum computers, in Foundations of Quantum Mechanics in the Light of New Technology, Eds. Y. A Ono and K. Fujikawa (World Scientiic, Singapore, 2003), p. 3. 116. G. S. Huang, X. L.Wu, Y. Xie, Z. Y. Zhang, G. G. Siu, and P. K. Chu, Photoluminescence from 8-hydroxy-quinolinoline aluminum embedded in porous anodic alumina membrane, Applied Physics Letters 87 (2005), 15190 and references therein.

Spins in Organic Semiconductor Nanostructures

117. H. Masuda and M. Satoh, Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask, Japanese Journal of Applied Physics, Part 2 35 (1996), L126. 118. D. D. Macdonald, On the formation of voids in anodic oxide ilms in aluminum, Journal of the Electrochemical Society 140 (1993), L27. 119. S. Ono, H. Ichinose, and N. Masuko, Defects in porous anodic ilms formed on high purity aluminum, Journal of the Electrochemical Society 138 (1991), 3705. 120. M. N. Grecu, A. Mirea, C. Ghica, M. CÖlle, and M. Schwoerer, Paramagnetic defect centers in crystalline Alq3, Journal of Physics: Condensed Matter 17 (2005), 6271 and references therein. 121. P. H. Reiger, Electron Spin Resonance: Analysis and Interpretation (he Royal Society of Chemistry, Cambridge, U.K., 2007).

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122. Y, Du, W. L. Cai, C. M. Mo, J. Chen, L. D. Zhang, and X. G. Zhu, Preparation and pho-toluminescence of alumina membranes with ordered pore arrays, Applied Physics Letters 74 (1999), 2951. 123. J. Wrachtrup, Ya. S. Kilin, and A. P. Nizovtsev, Quantum computation using the 13C nuclear spins near the NV defect center in diamond, Optics and Spectroscopy 91 (2001), 429. 124. M. V. G. Dutt, L. Childress, L. Jiang, E. Togan, J. Maze, F. Jelzko, A. S. Zibrov, P. R. Hemmer, and A. E. Craig, Quantum registers based on electronic and nuclear spin qubits in diamond, Science 316 (2007), 1312. 125. M. S. Shariar, J. A. Bowers, B. Demsky, P. S. Bhatia, S. Lloyd, P. R. Hemmer, and A. E. Craig, Cavity dark states for quantum computing, Optics Communications 195 (2001), 411. 126. S. Ghosh et al., Room temperature spin coherence in ZnO, Applied Physics Letters 86 (2005), 232507.

VI Nanoscale Methods 29 Nanometrology

Stergios Logothetidis ................................................................................................................................. 29-1

Introduction • Presentation of State of the Art • Summary • Future Perspective • Acknowledgments • References

30 Aerosol Methods for Nanoparticle Synthesis and Characterization Andreas Schmidt-Ott .................................. 30-1 Introduction • Online Characterization and Classiication of Aerosol Nanoparticles • Nanoparticle Generation • Conclusions • References

31 Tomography of Nanostructures Günter Möbus and Zineb Saghi ..................................................................................31-1 Introduction and Background • Projection Tomography Techniques on the Nanoscale • Sectioning Techniques (“Cut-and-Image”) • Discussion and Conclusions • References

32 Local Probes: Pushing the Limits of Detection and Interaction

Adam Z. Stieg and James K. Gimzewski .......... 32-1

Introduction • Local Probes • Local Probe Physics • Probing the Ultimate Limits • Outlook and Perspectives • Acknowledgments • References

33 Quantitative Dynamic Atomic Force Microscopy Robert W. Stark and Martin Stark ............................................ 33-1 Introduction • Modeling Multiple Degrees of Freedom • Dynamics of AFM • Reconstruction of the Interaction Forces • Conclusion • References

34 STM-Based Techniques Combined with Optics Hidemi Shigekawa, Osamu Takeuchi, Yasuhiko Terada, and Shoji Yoshida ....................................................................................................................................................................... 34-1 Introduction • Speciic Issues in Techniques Combined with Optical Technologies • Probing Carrier Dynamics in Semiconductors • Other Techniques • Summary • References

35 Contact Experiments with a Scanning Tunneling Microscope

Jörg Kröger ............................................................. 35-1

Introduction • Experiment • Contact to Surfaces and Adsorbed Atoms • Contact to Single Adsorbed Molecules • Conclusion and Outlook • Acknowledgments • References

36 Fundamental Process of Near-Field Interaction Hirokazu Hori and Tetsuya Inoue................................................ 36-1 Introduction • Optical Near-Field and Near-Field Optical Interaction • Half-Space Problem and Evanescent Waves • Angular Spectrum Representation of Optical Near-Field • Electric Dipole Radiation Near a Dielectric Surface • Quantum heory of Optical Near-Fields • References

37 Near-Field Photopolymerization and Photoisomerization Renaud Bachelot, Jérôme Plain, and Olivier Soppera.....................................................................................................................................................................37-1 Introduction • Some Concepts on Nanooptics: Examples of Optical Nanosources • Nanoscale Photopolymerization • Nanoscale Photoisomerization • Conclusions • Acknowledgments • References

38 Sot X-Ray Holography for Nanostructure Imaging Andreas Scherz ......................................................................... 38-1 Introduction • Principles of Holography • Practical X-Ray Holography for Nanostructure Imaging • Ultrafast X-Ray Holography • Outlook • Acknowledgments • References

39 Single-Biomolecule Imaging Tsumoru Shintake ............................................................................................................. 39-1 Overview of Single-Biomolecule X-Ray Difraction Imaging • Resolution Limit of Observation with Light • Lens-Less Dif raction Microscopy • Phase Retrieval • Ultrafast Dif raction Imaging with X-Ray FELs • Single Biomolecule Imaging with X-Ray FEL • Coherent Ampliication and X-Ray Heterodyne Detection of a Single Biomolecule • X-Ray Free-Electron Laser • Summary • References

VI-1

VI-2

Nanoscale Methods

40 Ampliied Single-Molecule Detection Ida Grundberg, Irene Weibrecht, and Ulf Landegren .................................... 40-1 Introduction • DNA as a Material for Molecular Design • Building Nanoscale DNA Structures • Clonal Ampliication of Nucleic Acid Molecules • Molecules hat Have Both a Genotype and a Phenotype • Reagents for Molecular Detection • Need for Improved Molecular Detection • Pushing Detection to the Limit of Single Molecules • Padlock Probes for Parallel and Localized Detection of Nucleic Acids • Proximity Ligation for Advanced Protein Analyses • Read-Out of Molecular Detection Reactions • Conclusions and Future Perspectives • Acknowledgments • References

29 Nanometrology 29.1 Introduction ...........................................................................................................................29-1 29.2 Presentation of State of the Art ...........................................................................................29-2 Spectroscopic Ellipsometry • Low-Angle X-Ray and Relectivity Techniques on the Nanoscale • Nanoindentation Techniques • Scanning Probe Microscopy

Stergios Logothetidis Aristotle University of Thessaloniki

29.3 Summary .............................................................................................................................. 29-47 29.4 Future Perspective .............................................................................................................. 29-48 Acknowledgments .......................................................................................................................... 29-48 References........................................................................................................................................ 29-48

29.1 Introduction Nanometrology is the science and practice of measurement of functionally important, mostly dimensional parameters and components with at least one critical dimension, which is smaller than 100 nm. he application and use of nanomaterials in electronic and mechanical devices, optical and magnetic components, quantum computing, tissue engineering, and other biotechnologies, with smallest features widths well below 100 nm, are the economically most important parts of the nanotechnology nowadays and presumably in the near future. In parallel with the shrinking dimensions of the components and structures produced in the relative industries, the required measurement uncertainties for dimensional metrology in these important technology ields are decreasing too (Bhushan 2004, Nomura et al. 2004). Success in nanomanufacturing of devices will rely on new nanometrologies needed to measure basic material properties including their sensitivities to environmental conditions and their variations, to control the nanofabrication processes and material functionalities and to explore failure mechanisms (Alford et al. 2007). In order to study and explore the complex nanosystems, highly sophisticated experimental, theoretical, and modeling tools are required (Alford et al. 2007, Nomura et al. 2004). Especially, the visualization, characterization, and manipulation of materials and devices require sophisticated imaging and quantitative techniques with spatial and temporal resolutions on the order of 10−6 and below to the molecular level. In addition, these techniques are critical for understanding the relationship and interface between nanoscopic and mesoscopic/ macroscopic scales, a particularly important objective for biological and medical applications (Whitehouse 2002). Examples of important tools available at the moment include highly focused synchrotron x-ray sources and related techniques that

provide detailed molecular structural information by directly probing the atomic arrangement of atoms; scanning probe microscopy that allows three-dimensional-type topographical atomic and molecular views or optical responses of nanoscale structures; in-situ optical monitoring techniques that allow the monitoring and evaluation of building block assembly and growth; optical methods, with the capability of measuring in air, vacuum, and liquid environment for the study of protein and cells adsorption on solid surfaces, that have been employed to discriminate and identify bacteria at the species level and it is very promising for analytical purposes in biochemistry and medicine (Lousinian and Logothetidis 2008, Lousinian et al. 2008, Karagkiozaki et al. 2009). he nanometrology methods need measurements that should be performed in real time to allow simultaneous measurement of properties and imaging of material features at the nanoscale. hese nanometrology techniques should be supported by physical models that allow the de-convolution of probe–sample interactions as well as to interpret subsurface and interface behaviors. Ellipsometry is a key technique meeting the aforementioned demands. It can be applied during the nanofabrication processes and provides valuable information concerning the optical, vibrational, structural, and morphological properties, the composition, as well as the thickness and the mechanisms of the specimen under growth or synthesis conditions in nanoscale (Azzam and Bashara 1977, Keldysh et al. 1989, Logothetidis 2001). Further correlation between optical and other physical properties can lead to a more complementary characterization and evaluation of materials and devices (Azzam and Bashara 1977, Keldysh et al. 1989, Logothetidis 2001). Also, x-ray relectivity (XRR) is a powerful tool for investigating monolithic and multilayered ilm structures. It is one of the few methods that, with great accuracy, allows not only 29-1

29-2

information on the free surface and the interface to be extracted but also the mass density and the thickness of very thin i lm of the order of a few nanometers along the direction normal to the sample surface to be determined. XRR is able to ofer accurate thickness determination for both homogeneous thin i lms and multilayers with the same precision, as well as densities, surface, and interface roughness of constituent layers. In addition, other promising nanometrology techniques include the tip-enhanced Raman spectroscopy (TERS) (Motohashi et al. 2008, Steidtner and Pettinger 2008, Yi et al. 2008). TERS combines the capabilities of Raman spectroscopy that has been used for many years for the single layer and even single molecule detection in terms of its chemical properties, with the advantages of an atomic force microscopy tip that is put close to the sample area that is illuminated by the Raman laser beam. In this way, a signiicant increase of the Raman signal and of the lateral resolution by up to nine orders of magnitude takes place. hus, TERS can be used for the chemical analysis of very small areas and for the imaging of nanostructures as well as of other materials such as proteins and biomolecules (Yeo et al. 2007, Zhang et al. 2007). Another important nanometrology method is nanoindentation that has been rapidly become the method of choice for quantitative determination of mechanical properties (as hardness and elastic modulus) of thin i lms and small volumes of material. Finally, scanning probe microscopes (SPMs) are standard instruments at scientiic and industrial laboratories that allow imaging, modiications, and manipulations with the nanoobjects. hey permit imaging of a surface topography and correlation with diferent physical properties within a very broad range of magniications, from millimeter to nanometer-scale range. Atomic force microscopy (AFM) and AFM-related techniques (e.g., scanning near-ield optical microscopy [SNOM]) have become sophisticated tools, not only to image surfaces of molecules, but also to measure molecular forces between molecules. his is substantially increasing our knowledge of molecular interactions.

29.2 Presentation of State of the Art In the following paragraphs, some of the most important nanometrology methods and techniques for the study of nanomaterials, nanoparticles, thin ilms, biomolecules, etc., are described, together with some speciic examples. Since the ield of nanometrology methods and their associated applications for the study of nanomaterials, nanostructures and thin ilms as well as interactions of light with matter at the nanoscale is quite large, in the following paragraphs, we will focus mainly to two directions. he irst will be the study of materials used for the emerging ield of organic electronics that include the lexible polymeric substrates, the hybrid (organic–inorganic) polymers, and inorganic materials that are used for the protection of the organic electronic devices against the atmospheric molecule permeation (barrier layers) and the electrode materials, such as zinc oxide (ZnO), which are used as electrodes. hese applications are of signiicant importance since the fabrication of organic electronic

Handbook of Nanophysics: Principles and Methods

devices onto lexible polymeric i lms by large-scale production processes ofers many exciting new opportunities and will also reduce several technical limitations that characterize the production processes of conventional microelectronics. In conventional Si microelectronics, patterning is most oten done using photolithography, in which the active material is deposited initially over the entire substrate area, and selected areas of it are removed by physical or chemical processes (Logothetidis 2005). he second direction is the study of biomolecules such as blood plasma proteins adsorbed onto inorganic thin ilm surfaces. hese materials are investigated by the use of spectroscopic ellipsometry (SE), AFM, and SNOM techniques. In addition, the study of amorphous carbon nanocoatings and transition metal nitrides as hard or biocompatible materials with the use of nanoindentation and XRR will be also presented and discussed.

29.2.1 Spectroscopic Ellipsometry 29.2.1.1 Basic Concepts and Dei nitions Spectroscopic ellipsometry (SE) has become the standard technique for measuring the bulk materials and surfaces, nanomaterials, thin i lm, their thickness, crystallite size, and optical constants such as refractive index or dielectric function (Azzam and Bashara 1977, Keldysh et al. 1989, Logothetidis 2001). SE is used for characterization of all types of materials: dielectrics, semiconductors, metals, organics, opaque, semitransparent, even transparent, etc. his technique and its instrumentation relies on the fact that the relection of a dielectric interface depends on the polarization of the light while the transmission of light through a transparent layer changes the phase of the incoming wave depending on the refractive index of the material (Azzam and Bashara 1977, Logothetidis 2001). An ellipsometer can be used to measure layers as thin as 0.2 nm up to layers that are several microns thick. Applications include the accurate thickness measurement of thin ilms, the identiication of materials and thin layers, the evaluation of vibrational, compositional and nanostructural properties, and the characterization of surfaces and interfaces (Logothetidis 2001). In order to understand how SE works, it is important to outline some basic concepts from the electromagnetic theory. Let us consider i rst the propagation of an electromagnetic plane wave through a nonmagnetic medium, which can be described by the vector of the electric ield E⃗ ; in the simple case this is a plane wave given by the following expression:   E = Ei ei (kz −ωt ) .

(29.1)

For oblique incidence, plane waves are typically referenced to a local coordinate system (x, y, z), where z is the direction of propagation of light k an d x and y deine the plane where the transverse electromagnetic wave oscillates. hat is, the latter are the directions (see Figure 29.1a) parallel (p) and perpendicular (s) to the plane of incidence, respectively (these two directions are the two optical eigenaxes of the material under study) (Azzam

29-3

Nanometrology

Eip

Multiple reflections

Eip Eis

Ers

Eis θ0

Medium (0)

θ0

Erp

n0 0

Ambient (0)

0

n0 Thin film (1)

Medium (1)

n1

n1

Ets Etp

θ1

Substrate (2)

(a)

1

1

1

n2

d

2

(b)

FIGURE 29.1 Oblique relection and transmission of a plane electromagnetic wave: (a) at the sharp interface between two media 0 and 1 with refractive indexes n 0 and n1, respectively, (b) at the surface of a thin i lm (medium 1) deposited onto a bulk substrate (medium 2). he electric ield components Ep and Es parallel-p and perpendicular-s to the plane of incidence, and the wave vector for the incident (i), relected (r) and transmitted (t) waves are shown. θ and θ1 are the angles of incidence and refraction.

and Bashara 1977, Logothetidis 2001). he complex electric ield amplitudes, Ep and Es, represent the projections of the plane wave E⃗ along x and y axes, respectively. herefore, the quantity E⃗i in Equation 29.1 carries information not only about the amplitude of the plane wave E⃗ when it is propagated in vacuum but also about its polarization. hat is,    Ei = Eix xˆ + Eiy yˆ .

(29.2)

In addition, the amplitude of the wave-vector k during the propagation of the wave in matter is in general a complex number given by the dispersion expression k = n∼ω/c. ω is the photon energy and n∼(ω) is the refractive index, which is in general a complex quantity, and it is related to dispersion (n) and absorption (k) of the radiation by the medium: nɶ(ω) = n(ω) + iκ(ω). ∼

(29.4)

For an electromagnetic wave transmitted in a dispersive and absorbing material Equation 29.1 can be rewritten as follows: z ωκz    i ωn − Ei = Eix xˆ + Eiy yˆ e c e c e −iωt ,

(

)

   Er = rɶp E0 x xˆ + rɶs E0 y yˆ .

(

2ωκ ⎛ 4 πκ ⎞ = λ ⎟⎠ c ⎜⎝

(29.6)

In this approximation, the interaction of the electromagnetic wave with the material is described by the two complex Fresnel relection coeicients, r∼p and r∼s. hese relection coeicients describe the inluence of the material on the electric ield components, p and s, that correspond to the directions parallel (p) and perpendicular (s) to the plane of incidence and characterize the interface between two media (e.g., the ambient—medium 0 and the material studied—medium 1) and are given by the following expressions:

ɶrp =

iθ r , p ɶ Eɶr , p Er , p ⋅ e Eɶ i(θ −θ ) = = r , p ⋅ e r , p i, p = rɶp ei δ p, ɶ ɶ i θ i , p ɶ Ei , p Ei , p ⋅ e E i, p

Eɶr ,s ⋅ eiθr ,s Eɶ Eɶ rɶs = ɶr ,s = = ɶr ,s ⋅ ei(θr ,s −θi ,s ) = rɶs ei δ s . Ei ,s Ei,s Eɶi ,s ⋅ eiθi ,s

(29.7)

(29.8)

he Fresnel relection coeicients in the interface between two media i and j, e.g., medium (0) and medium (1) in Figure 29.1a, with refractive index n∼i and n∼j, respectively, are given by the following expressions:

(29.5) ɶrij , p =

nɶj cos θi − nɶi cos θ j , nɶj cos θi + nɶi cos θ j

(29.9)

ɶrij, s =

ɶj cos θ j nɶi cos θi − n , ɶj cos θ j nɶi cos θi + n

(29.10)

with the quantity (absorption coeicient) α=

)

(29.3)

he complex dielectric function ε (ω)=(ε1 + iε2) is actually the quantity directly related to the material properties and is connected to the refractive index through the following equation: ⎧ε1 = n2 − κ2 ɶε(ω) = ε1 + iε2 ≡ nɶ2 (ω) = (n + iκ)2 ⇒ ⎪⎨ . ⎪⎩ε2 = 2nκ

to deine the penetration depth of the wave in the material and λ being the wavelength in vacuum. When the electromagnetic wave is relected by the material smooth surface (see Figure 29.1a), the polarization of the outgoing wave can be represented as

29-4

Handbook of Nanophysics: Principles and Methods

where the incident θi and refracted θj angles are correlated through the Snell law n∼i sin ϑi = n∼j sin ϑj. When the light beam does not penetrate the medium (1), due to either its high absorption coeicient or its ininite thickness, as shown in Figure 29.1a, we are referred to a two-phase (ambient-substrate) system or a bulk material surrounding by medium (0). In this case, the ratio of the p-, s-Fresnel relection coeicients, namely, the complex relection ratio is the quantity measured directly by SE and it is given by the following expression: ɶ= ρ

rɶp rɶp i (δ p −δ s ) e = = tan Ψ e i Δ , rɶs rɶs

(29.11)

that characterizes any bulk material. In this expression, Ψ and Δ are the ellipsometric angles, and for a bulk material take values 0° < Ψ < 45° and 0° < Δ < 180°. From an ellipsometric measure∼ ment, the complex relection ratio ρ is estimated through the calculation of amplitude ratio tan Ψ and the phase diference Δ. From these two quantities, one can extract all the other optical constants of the material. For example, the complex dielectric function of a bulk material with smooth surfaces is directly calculated by the following expression (Azzam and Bashara 1977): ⎧ ⎡ ɶ ⎤2 ⎫ ɶ 2 (ω) = ɶε 0sin2θ ⎪⎨1 + ⎢ 1 − ρ(ω) ⎥ tan2θ⎪⎬ , (29.12) ɶε(ω) = ε1 + iε 2 = η ɶ(ω) ⎦ 1+ ρ ⎪⎭ ⎩⎪ ⎣ where θ is the angle of incidence of the beam ∼ ε0 is the dielectric constant of the ambient medium (for the ∼ case of air ε0 = n∼0 = 1) In the case of a i lm deposited on a substrate (see ), we have the three-phase model where the i lm with thickness d [medium (1)] is conined between the semi-ini nite ambient [medium (0)] and the substrate [medium (2)]. he complex relectance ratio is deined as (Azzam and Bashara 1977) ɶ R ɶ= p, ρ ɶs R

(29.13)

rɶ01 p + rɶ12 pei 2β Rɶ p = , 1 + rɶ01 prɶ12 pei 2β

(29.14a)

rɶ + rɶ e i 2β Rɶs = 01s 12 s i 2β , 1 + rɶ01srɶ12 se

(29.14b)

where ∼r 01i and ∼r12i (i = p,s) are the Fresnel relection coeicients for the interfaces between medium (0) and (1) and medium (1) and (2), respectively. hese depend on i lm thickness due to the multiple relections of light between the media (0)–(1) and (1)–(2), through the phase angle β given by

12 d β = 2π ⎛⎜ ⎞⎟ (n12 − n02 sin2 θ ) , ⎝λ⎠

(29.14c)

where d is the i lm thickness λ is the wavelength θ is the angle of incidence n0, n1 are the complex refraction indices of the ambient and the i lm, respectively hus, the measured quantity is the pseudodielectric function 〈ε(ω)〉 = (〈ε1(ω)〉 + i〈ε2(ω)〉), which contains information also about the substrate and the i lm thickness. As a result, the phase angle β diminishes in the energy region of high absorption, lead∼ ing to R i = ∼r 01i = ∼r i, (i = p,s) and consequently to 〈 ρ〉 = ρ. hus, at the absorption bands, we obtain information only of the optical properties of the bulk of the ilm. A representative setup of a spectroscopic ellipsometer is shown in Figure 29.2. A well-collimated monochromatic beam is generated from a suitable light source (in the case of Vis–fUV spectral region is a high pressure Xe arc lamp) and it is passed through a polarizer in order to produce light of known-controlled linear polarization and a photoelastic modulator that modulates the polarization of the light beam. hen, the light beam is relected by the surface of the sample under investigation, with a light beam spot size to be of the order 1–3 mm2. Ater its relection on the sample, the light beam is passed through the second polarizer (analyzer), to be analyzed with respect to the new polarization stage established under the relection, and inally it is detected and transformed to raw data through the computing devices. his last part of the ellipsometric setup deines the accuracy and the speed of the information and the data obtained about the investigated sample. he excitation head and the optical holder with the analyzer can be easily mounted and dismounted from such an ellipsometric setup to be adapted, for example, on deposition systems for in-situ and realtime ellipsometric measurements (Logothetidis 2001). he energy of the relected light beam can be analyzed by a grating monochromator providing the full spectrum capability. In the simplest setup, a photomultiplier is used as detector in the wavelength range 225–830 nm. In addition, several detectors (for example, 32 photomultipliers) consisting of a multiwavelength unit can be adapted to a spectrograph through optical ibers providing the real-time measuring capability. Using digital parallel signal processing, a spectrum consisting of at least 32-photon energies between 1.5 and 6.5 eV can be recorded in less than 60 ms (Gioti et al. 2000, Logothetidis 2001, Gravalidis et al. 2004, Laskarakis et al. 2010). Other common ellipsometer conigurations include rotating analyzer, rotating polarizer, and rotating compensator conigurations in order to modulate the light beam polarization before its relection on the sample surface. he rotating element methods are generally easy to automate and can be used on a large spectral range. In the case of rotating polarizer technique, a source with wellknown polarization state is required, whereas ater relection of

29-5

Nanometrology Elastic modulator

Analyzer

Polarizer

Fiber optic

Sample

Fiber optic

Detector Monochromator 826 nm

Light source

Acquisition

FIGURE 29.2 An optical setup of a phase modulated spectroscopic ellipsometer in the Visible–UV energy region. he light source (Xe arc lamp), the polarizer and elastic modulator consist the excitation head, whereas the analyzer, monochromator and detector consist the detection head. he acquisition board and the computing device are necessary to collect and transform the information into raw data for further analysis.

the light on the sample, the analyzer is i xed. In these systems, it is not necessary to have a detector insensitive to the polarization and the spectrometer can be located between the analyzer and the detector. In the case of the rotating analyzer technique, the detector must be insensitive to the polarization and the spectrometer must be located between the source and the polarizer. Finally, in the case of rotating compensator systems, the polarization problems at the source and detector levels can be suppressed but the spectral calibration of the compensator is dificult (Tompkins and Irene 2005). he SE experimental setup in the infrared (IR) spectral region is quite similar to the above described setup and it is also based on the conventional polarizer-modulator-sample-analyzer ellipsometer coniguration. he incident beam is provided by a conventional IR spectrometer, which contains a SiC light source and a Michelson interferometer. he parallel IR light beam coming out from the spectrometer is focused on ∼1 cm 2 area on the sample surface by means of mirrors. Before reaching the sample, the IR beam passes through the IR grid polarizer and the ZnSe photoelastic modulator at 37 kHz (Laskarakis et al. 2001). Ater relection from the sample, the beam goes through the analyzer (IR grid polarizer) and is focused on the sensitive area of a photovoltaic detector: InSb (above 1850 cm−1) and HgCdTe (MCT). he spectral range of the ellipsometer is limited by the detector speciications. he resolution of the spectra can be varied from 1 to 128 cm−1. A full spectrum of the dielectric function can be recorded in less than 2 s, which corresponds to a single scan of the interferometer. By increasing the integration time to a few minutes, the precision on Ψ and Δ can be improved by more than one order of magnitude. hus a resolution better

of the order of 0.01° on both Ψ and Δ angles can be achieved (Laskarakis et al. 2001, Gravalidis et al. 2004). SE is one of the most promising techniques for the study of inorganic, organic, and hybrid materials to be used for stateof-the-art applications, such as for organic electronic devices deposited onto lexible polymeric substrates (Logothetidis 2005, Laskarakis et al. 2009). hese applications include lexible organic light emitting diodes (OLEDs), lexible organic photovoltaic cells (OPVs), and organic circuits and consist of a multilayer structure of inorganic, organic, and hybrid nanolayers. Also, SE plays an important role for the study of the optical properties of inorganic, organic, and hybrid i lms (e.g., ultrahard i lms, corrosion resistant i lms, optical materials, and biocompatible i lms) deposited onto lat and complex substrates. For the above applications, the deposition of functional thin i lms with nanometer precision is absolutely necessary and therefore use of nondestructive nanometrology tools is of major importance (Logothetidis 2001, Laskarakis and Logothetidis 2007). 29.2.1.2 Theoretical Models for Analysis of Ellipsometric Data he study of the material properties by ellipsometry is performed by the use of the dielectric function ε(ω) = ε1(ω) + iε2(ω). he real ε1(ω) and the imaginary ε2(ω) parts of the dielectric function are strongly related through the well-known Kramers–Kronig relation (is based on the principle of the causality (Keldysh et al. 1989)): ∞

ε1(ω) = 1 +

2 ω′ε2 (ω′) P dω′, π ω′2 − ω2

∫ 0

(29.15a)

29-6

Handbook of Nanophysics: Principles and Methods ∞

ε2 (ω) = −

2ω ε (ω′) − 1 P 12 dω′, π ω′ − ω2

∫

(29.15b)

0

where P means the principal value of the integral around the characteristic of the material electronic resonance (ω′ = ω) and ∞

2 ε (ω′) dω′ ε1(ω = 0) = 1 + P 2 π ω′

∫

(29.15c)

0

is the static dielectric function, the material strength (deviation from the strength of vacuum ε0 = 1), which describes all losses in the whole electromagnetic spectrum in the material due to the electron absorption. he optical response of the thin ilms can be deduced by the parameterization of the measured 〈ε(ω)〉 by the use of appropriate theoretical models. One of these models is the damped harmonic oscillator (Lorenz model), which is described by the expression (Keldysh et al. 1989, Gioti et al. 2000, Logothetidis 2001): ɶε(ω) = 1 +

f ω 20 , ω − ω 2 + iΓω 2 0

(29.16)

where ω is the energy of light ω0 is the absorption energy of the electronic transition he constants f and Γ denote the oscillator strength and the damping (broadening) of the speciic transition, respectively

ω 2p = f, ω 20

(29.17)

which is the static dielectric constant and represents the contribution of the electronic transition that occurs at an energy ω0 in the NIR–Visible–UV energy region, on the dielectric function (Laskarakis et al. 2001) and ωp is the plasma energy. In the case that more than one electronic transition occurs, their contribution in ε1(ω = 0) is accounted by the summation: ε1(ω = 0) = 1 +

∑f, i

(29.18)

i

∑

⎧ AE0C(ω − E g )2 1 , ⎪ 2 ε 2 (ω ) = ⎨ (ω − E02 )2 + C 2ω 2 ω ⎪0, ⎩

ω > Eg ,

(29.19)

ω ≤ Eg ,

where Eg is the fundamental band gap energy A is related to the transition probability E 0 is the Lorentz resonant energy C is the broadening term, which is a measure of the material disorder (Jellison and Modine 1996) In the following, we present some representative examples of the investigation of the optical properties of various state-ofthe-art materials by SE. hese materials are for example, lexible polymeric i lms, and functional thin i lms used for state-of-theart applications (as lexible organic electronic devices), as well as biocompatible inorganic surfaces and thin ilms and examples of protein layers adsorbed on these i lms. 29.2.1.3 Probing the Optical–Electronic and Anisotropic Properties of Polymers

he quantity ε1(ω = 0) is given by the following relation ε1(ω = 0) = 1 +

of the classical Lorentz dispersion relation and the Tauc density of states (Tauc et al. 1966) in the proximity of the fundamental optical gap Eg. his results in an asymmetrical Lorentzian lineshape for the imaginary part ε2(ω) of the dielectric function. he TL dispersion model is described by the following relations in which the real part ε1(ω) is determined by the imaginary part ε2(ω) by the Kramers–Kronig integration (Jellison and Modine 1996) (see Equation 29.15a):

f i describes the losses in the material in the whole where i electromagnetic region due to the electronic transitions. In the case of semiconducting materials, interband electronic transitions take place due to the interaction between the electromagnetic radiation (photons) and the matter (electrons). According to classical Lorentz oscillator model, the dielectric function is given by Equation 29.16. However, one of the models that are used for the modeling of the measured dielectric spectra of amorphous semiconductors is the Tauc–Lorentz (TL) model (Jellison and Modine 1996). his is based on the combination

Poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN) polymeric i lms have attracted signiicant attention due to their use in a numerous applications and industrial ields, as for the fabrication of high-performance polarization optics, data storage and recording media and optoelectronic devices, in food and pharmaceutical packaging, as well as in artiicial heart valves, sutures and artiicial vascular grats (Gould et al. 1997, Wangand and Lehmann 1999, Tonelli 2002, Gioti et al. 2004, Laskarakis et al. 2004). Moreover, PET and PEN are excellent candidate materials to be used in the production of flexible organic electronic devices, such as flexible organic displays and photovoltaic cells by large scale manufacturing processes (Hamers 2001, Forrest 2004, Nomura et al. 2004), since they exhibit a combination of very important properties such as easy processing, lexibility, low cost, good mechanical properties, and reasonably high resistance to oxygen and water vapor penetration (Wang and Lehmann 1999, Yanaka et al. 2001, Fix et al. 2002, Tonelli 2002). he monomer units of PET and PEN are schematically shown in Figure 29.3. he unit cell of PET, which is triclinic with a density of 1.455 g/cm3, presents a C2h point symmetry and consists of an aromatic ring and an ester function that form the terephthalate group, and by a short aliphatic chain that constitutes the ethylene segment. PEN exhibits large similarities with PET and it has a

29-7

Nanometrology O

O

O

O

C

C

O

O O

Ester group Ester group Terephthalate group

CH2

CH2

C O

C

n Ester group

Ethylene group

Ester group

CH2

CH2

n

Ethylene group

Naphthalate group

(a)

(b)

FIGURE 29.3 Monomer units of (a) PET and (b) PEN.

he understanding of PET and PEN optical and electronic properties and bonding structure and their relation to the degree of the macromolecular orientation is of fundamental importance and can signiicantly contribute toward the understanding of the mechanisms that take place during their surface functionalization or during the deposition of functional thin i lms on their surfaces. Figures 29.4 and 29.5 show the measured pseudodielectric function 〈ε(ω)〉 of the PET and PEN polymeric substrates in the Vis–fUV and IR spectral region, respectively. At energies below 4.0 (3.0) eV (Laskarakis and Logothetidis 2007) for PET (PEN), ε(ω) consists of interference fringes due to the multiple relections of light at their back interface, as a result of

7

IV

PET film

5

3

4

2

3

1

2

0 I II

1 (a)

4

III

ε1(ω) ε2(ω)

0 8

–2 PEN film

IVa

ε1(ω) ε2(ω)

IVb

7

ε1(ω)

5

IVc

5

4 IIIc

4

3

I II

3

2 1

2 IIIb IIIa

1

(b)

7 6

6

0 1.5

–1

ε2(ω)

ε1(ω)

6

5

ε2(ω)

triclinic unit cell with the addition of a second phenyl ring, forming the naphthalene group (Laskarakis and Logothetidis 2006). he large-scale production of these polymeric i lms includes a stretching process in order to achieve the necessary thickness and other desirable mechanical properties. During this process, the polymer i lms obtain a higher structural symmetry due to the preferred molecular orientation of the macromolecular chains leading to optical anisotropy. he optical axes are usually not perfectly oriented along the reference axis of the production line (stretching direction, referred as machine direction [MD]), introducing substantial diiculties to the investigation of their optical properties for production optimization and quality control (Laskarakis and Logothetidis 2006).

2.0

2.5

3.0

3.5

4.0

4.5

0 5.0

5.5

6.0

–1 6.5

Photon energy (eV)

FIGURE 29.4 Measured pseudodielectric function in the Vis–fUV spectral region of PET (a) and PEN (b) films at a high symmetry orientation θ = 0°.

29-8

Handbook of Nanophysics: Principles and Methods 12 10

IR active absorption bands

Transparency region

6 4

8 2 0 4 –2



6

2 –4 0 –2

PET film

–6 –8

(a) –4 IR active absorption bands

Transparency region

10

6

4

2 6

0

4

2

–2

–4

PEN film 1000

(b)



8

1250

1500

1750

2000

2250

2500

2750

3000

Wavenumber (cm–1)

FIGURE 29.5 Real and imaginary parts of the measured 〈ε(ω)〉 in the IR spectral region of (a) PET and (b) PEN i lm at azimuth angle θ = 0° and at an angle of incidence of 70°.

their optical transparency (Gioti et al. 2004, Laskarakis and Logothetidis 2006). he existence of naphthalene group leads to the signiicant shit of the absorption bands of PEN to lower energies and to a characteristic split in all of them than in PET (Laskarakis et al. 2004). Peaks I and II can be attributed to the n → π* electronic transition of the nonbonded electron of the carbonyl O atom (Ouchi 1983, Ouchi et al. 2003, Laskarakis and Logothetidis 2006). he peak III (PET), which is possibly attributed to the spin-allowed, orbitally forbidden 1A1g → 1B1u transition, has been reported to be composed by two subpeaks with parallel polarization dependence (Laskarakis and Logothetidis 2006). Its higher broadening can be attributed to the break of the symmetry of the phenyl rings due to the substitution of carbon atoms (Kitano et al. 1995, MartínezAntón 2002). In PEN, the peak III can be decomposed to the subpeaks IIIa (4.16 eV), IIIb, (4.32 eV), IIIc (4.49 eV). Finally, peak IV (PET) can be analyzed as two subpeaks with diferent polarizations (6.33 & 6.44 eV) ater molecular orbital calculation based on π-electron approximation (Ouchi 1983, Ouchi

et al. 2003) and it can be attributed to the 1A1g → 1B1u electronic transition of the para-substituted benzene and naphthanene rings of the PET and PEN i lms with polarization rules rings plane. h is peak in PEN can be analyzed to three subpeaks at 4.97(IVa), 5.2(IVb) and 5.7(IVc) eV (Ouchi 1983, Ouchi et al. 2003, Laskarakis and Logothetidis 2006). Besides the detailed study of the electronic transitions of the PET and PEN polymeric i lms, it is possible to investigate the optical anisotropy of these materials by the analysis of the measured ε(ω) spectra. he detailed study of the optical anisotropy can provide important structural and morphological information regarding the arrangement of macromolecular chains. his can be achieved by the study of the dependence of the electronic transitions of PET and PEN with the angle between the plane of incidence and the MD (angle θ). he measured ε(ω) = ε1(ω) + iε2(ω) can be analyzed using damped harmonic Lorentzian oscillators (Equation 29.17), in combination to two-phase (air/bulk material) model as a function of the angle θ (see Figure 29.6). It is clear that the oscillator

29-9

Nanometrology

0.025

PEN

I

0.020 0.015 0.012

II

0.010

PET

0.005 I Osc. strength f (a.u.)

Osc. strength (a.u.)

0.008

II

0.004 0.4 IV

0.3

0.04

IIIc

0.02 0.6 IVc

0.5

0.4

0.4

IVb

0.3

IIIb

0.1

0.2

0.2 0

(a)

IIIa

0.06

0.6 IIIa

0.2

IIIb

0.08

60

120 180 240 Angle θ (deg.)

300

0.1

360

IVa 0

60

(b)

120 180 240 Angle θ (deg.)

300

360

0.0

FIGURE 29.6 Angular dependence of the oscillator strength f with angle θ, determined by the analysis of the measured 〈ε(ω)〉. he solid lines are guide to the eye.

response of a uniaxial material, with its optic axis parallel to its surface. A more solid justiication for this assumption can be deduced by the calculation of the refractive index n at the transparent region, or more precisely at n2(ω) = ε1(ω ≈ 0), shown in Figure 29.7. In the case of a uniaxial material, with its optic axis parallel to the surface, the dependence of n(ω = 0) with the angle θ is shown Figure 29.5, (n|| and n⊥ are the principal values of the 1.90 PEN 1.85 Refractive index n

strength f corresponding to peaks I to IV has a harmonic azimuthal dependence, with a period of half-complete rotation (180°), due to the light interaction with oriented and nonoriented regions. Also, the perpendicular azimuthal dependence of f I and f II is similar in both i lms, in agreement with the assignment of peaks I and II to the n → π* electronic transition of the carbonyl group with selection rules perpendicular to the macromolecular chains. Moreover, all the subpeak components of peak III, attributed to the π → π* excitation of the phenyl and naphthalene ring structures, are characterized by same parallel azimuthal dependence, as a result of the π → π* electronic transition selection rule parallel to the MD. Finally, the azimuthal dependence of f IV appears diferent between PET and PEN. In PET, the minor deviation of f IV from the average value at ∼0.3 is in agreement with the argument that peak IV consists of two overlapped subpeak components with opposite polarization dependence (Ouchi 1983, Ouchi et al. 2003). In PEN, the IVa and IVb subpeaks are characterized by similar parallel polarization dependence. However, the perpendicular polarization dependence of peak IVc could be attributed to the interaction to peak IVc of the intense absorption band that has been reported, at ∼7.3 eV (characterized by perpendicular polarization) (Ouchi 1983, Ouchi et al. 2003, Laskarakis and Logothetidis 2006). From the above, it can be supported that although the PET and PEN polymeric ilms are characterized by biaxial optical anisotropy, their optical response can be approximated as the

1.80 1 n2 (θ)

1.75

=

sin2θ n2||

+

cos2θ n2

PET

1.70

1.65

0

60

120

180 240 Angle θ (deg.)

■

300

•

360

FIGURE 29.7 Refractive index n of PET ( ) and PEN ( ) in the transparent region, itted with the relation shown in the inset (solid lines).

29-10

refractive index). In this analysis, we have used the formulation θ → θ + Δθ to shit from the polymer ilm axis system to the optic axis system. Δθ represents the angle between the optic axis, (high symmetry axis corresponding to macromolecular chains), and the MD. It is clear that there is excellent agreement between the calculated values of n and the it, justifying the approximation of PET and PEN as uniaxial materials with their optic axes parallel to their surface. Furthermore, by the azimuthal dependence of n, we obtain the angle between the optic axis and the MD. By the analysis, we obtain the following values: n⊥PET = 1.680, n||PET = 1.730, Δθ(PET) = 5.30° ± 0.70°, n⊥PEN = 1.805, n||PEN = 1.857 and Δθ(PEN) = 18.98° ± 1.44° (Laskarakis and Logothetidis 2006). he optical response of PET and PEN polymeric ilms in the IR spectral region are shown in Figure 29.5. Between 900 and 1800 cm−1 the strong absorption bands denote the contribution of the vibrational modes corresponding to the IR-active chemical bonds of PET and PEN. Above 1800 cm−1, both i lms are optically transparent and their Fourier transform IR spectroscopic ellipsometry (FTIRSE) spectra are dominated by Fabry–Perot oscillations due to the multiple relections of light at the i lm interfaces (Gioti et al. 2004, Laskarakis et al. 2004). Among the more intense characteristic vibration bands in the FTIRSE spectra of PET (Figure 29.6a), we observe the vibration modes at ∼940 and ∼971 cm−1 (trans) that could be attributed to the C—O stretching mode, the aromatic CH2 stretching mode at ∼1125 cm−1, the ester mode at ∼1255 cm−1, the in-plane deformation of the C—H bond of the para-substituted benzene rings at ∼1025 and ∼1410 cm−1 and furthermore, the characteristic vibration band at 1720 cm−1 corresponding to the stretching vibration of the carbonyl C=O groups (Miller and Eichinger 1990, Cole et al. 1994, 1998). he band at 1342 cm−1 is attributed to the wagging mode of the ethylene glycol CH2 groups of the trans conformations (Miller and Eichinger 1990, Cole et al. 1994, 1998). Also, we observe at 1470 cm−1 the characteristic peak corresponding to the CH2 bending mode, whereas the C—H in plane deformation mode appears at ∼1505 cm−1. Due to the existence of naphthalene ring structure in the monomer unit of PEN instead of a benzene ring structure, in PET, the FTIRSE spectra ( Figure 29.5b) shows a similar IR response, however, with some additional vibration bands. hese include the bands at 1098 cm−1 that has been attributed to the stretching and bending modes of ethylene glycol attached to the aromatic structures of the PEN monomer units. Moreover, the characteristic band at 1184 cm−1 corresponds to the C—C stretching modes of the naphthalene group. he complex bands at 1335 and 1374 cm−1 reveal the bending mode of the ethylene glycol CH2 group in the gauche and trans conformations, respectively. he C=C stretching modes of the aromatic (naphthalene) ring structures of PEN can be observed at ∼1635 cm−1. Moreover, the stretching vibration of the carbonyl C=O group appears in lower energy in case of PEN (1713 cm−1) than in PET (1720 cm−1). his could be the result of the increased conjugation due to the existence of naphthalene (PEN) instead of benzene (PET) rings structures, which shits the maximum absorbance to lower wavenumbers.

Handbook of Nanophysics: Principles and Methods

Finally, the determination of the optical response of PET and PEN i lms in the extended spectral region, from the IR (bonding vibration modes) to Vis–fUV (band-to-band electronic transitions), allows the calculation of the bulk dielectric function ε(ω). Figure 29.8 shows the determined ε(ω) of PET and PEN, calculated at the high symmetry orientation θ = 0° (plane of incidence parallel to the MD) (Gioti et al. 2004, Laskarakis et al. 2004). he ε(ω) has been calculated using the best-it parameters obtained by the analysis of the measured 〈ε(ω)〉 taking account the peaks I to IV (Vis–fUV) and the characteristic bands corresponding to the more intense bonding vibrations in the wavenumber region 900–1800 cm−1 (Gioti et al. 2004, Laskarakis et al. 2004). he high-energy dielectric constant that represents the optical transitions at energies ω ≥ 6.5 eV, has the values of 2.39 (PET) and 2.44 (PEN), which are higher than unity (Equation 29.16). h is indicates that more electronic transitions should be expected at higher energies. Indeed, it has been found at the literature, that both PET and PEN polymers show electronic transitions at energies (around 13.3 and 15.5 eV), which are characterized by optical anisotropy (Ouchi et al. 2003). hese band-to-band transitions do not afect the optical absorption measured up to 6.5 eV measurement limit, however contribute to the ε1(ω), inducing an increase from unity (see Equations 29.15c and 29.16). From the above it is clear that the implementation of ellipsometry as a nanometrology tool for the investigation of the optical and electronic properties of lexible polymer i lms is of major importance and provides signiicant information on the understanding of their optical, structural, and vibrational properties. his information is required for the study of the active (e.g., small molecule and polymer organic semiconductors) and passive materials (electrodes, barrier layers) that can be deposited onto the polymeric i lms used as substrates for organic electronics applications. 29.2.1.4 Optical Studies of Inorganic–Organic Layers with Embedded SiO2 Nanoparticles One of the major challenges that have to be addressed and overcome in order for lexible organic electronic devices (such as organic light emitting diodes [OLED], electrochromic displays, lexible lighting, and lexible photovoltaic cells [OPVs]) to reveal their full potential is their encapsulation in transparent media that will provide the necessary protection against atmospheric gas molecule (H2O and O2) permeation (Logothetidis and Laskarakis 2008, Laskarakis et al. 2009). he use of SiOx thin i lms and hybrid (inorganic–organic nanocomposite) polymers for the encapsulation of lexible electronic devices provides suicient inal protection against permeation of atmospheric gas molecules (H2O and O2). A SiOx thin i lm or nanolayer of 30–50 nm thick reduces the permeation of atmospheric gases by 50–100 times (Logothetidis and Laskarakis 2008). hese are prepared by electron beam evaporation, and sputtering vacuum techniques on PET substrates and will be discussed in the next paragraph. On the other hand, the hybrid barrier materials are synthesized via the sol–gel processes from organoalkoxysilanes, and they have strong covalent or

29-11

Nanometrology

7

IR spectral region (bonding vibrations)

PET (θ = 0°)

Vis–fUV spectral region (electronic transitions)

Dielectric function

6 5 4

ε1(ω)

3 2 ε2(ω)

1 (a) 0 7

IR spectral region (bonding vibrations)

6 Dielectric function

Vis–fUV spectral region (electronic transitions)

PEN (θ = 0°)

5 ε1(ω)

4 3 2

ε2(ω) 1 0

0.05

0.10

0.15

0.20

(b)

0.25 1 2 3 Photon energy (eV)

4

5

6

7

8

9

10

FIGURE 29.8 Calculated bulk dielectric function ε(ω) of (a) PET and (b) PEN i lm for θ = 0° using the best-it parameters deduced by the SE analysis in the IR and Vis–fUV spectral regions.

ionic–covalent bonds between the inorganic and organic components. A schematic representation of these hybrid materials is shown in Figure 29.9 (Laskarakis et al. 2009). One of the main factors that afect the barrier response of hybrid polymers is the crosslinking between the inorganic and X

O O

Si

X

Si O

OH

X

X

O

Si OH

X

OH

O

Si

Si O

X

OH

Si X

O

O O

O

R Si

X X

O

R

Si

X

Si

O

O

O X

R

O

R

Si R

X

X

Si

X

X

Si

X R

FIGURE 29.9 Schematic representation of the structure of the hybrid barrier materials.

the organic components as well as its adhesion on the substrate. Also, one promising approach in this direction and for the reduction of permeation of atmospheric gases further more by ∼100 times is the inclusion of SiO2 nanoparticles (SiO2–NP). his can be done during the synthesis process of the hybrid polymers, with the inal aim to enhance the inorganic–organic crosslinking and to realize a more cohesive bonding network between the organic and inorganic components (Laskarakis et al. 2009). In the following, we will present some representative examples on the investigation of the optical properties of hybrid polymer used as barrier layers deposited onto SiOx/PET substrates and the efect of the inclusion of SiO2—NP on their microstructure, optical properties, and functionality. he optical properties were measured in an extended spectral region from the IR to the Vis– fUV spectral region in order to stimulate diferent light-matter mechanisms (bonding vibrations, interband transitions). he measured pseudodielectric function 〈ε(ω)〉 in the Vis–fUV energy region (1.5–6.5 eV) of a representative hybrid barrier material with diferent amounts of SiO2 nanoparticles (SiO2—NP) is shown in Figure 29.10. In the lower energy region, the measured 〈ε(ω)〉 is dominated by interference fringes that are attributed to

29-12

Handbook of Nanophysics: Principles and Methods 3.5

ε1(ω)

3.0

2.5

2.0

1.5

ε2(ω)

1.0

Hybrid/SiOx/PET Hybrid + 1% SiO2/SiOx/PET Hybrid + 5% SiO2/SiOx/PET Hybrid + 10% SiO2/SiOx/PET Hybrid + 30% SiO2/SiOx/PET

0.5

0.0

–0.5

2

3

4 Photon energy (eV)

5

6

FIGURE 29.10 Measured pseudodielectric function 〈ε(ω)〉 = 〈ε1(ω)〉 + i 〈ε2(ω)〉 in the Vis–fUV spectral region of the hybrid barrier layer deposited onto SiOx/PET.

the multiple light relections at the interfaces between the hybrid layer and the SiOx intermediate layer, as the result of their optical transparency in this energy region. At higher energies, the optical absorption of the hybrid polymer takes place. he hybrid polymers can be treated as composite materials consisting of an organic and an inorganic component. hus, in order to extract quantitative results from the measured 〈ε(ω)〉, this has been analyzed by the use of four-phase geometrical model (air/hybrid polymer/SiOx/PET substrate) that consists of a hybrid layer (with thickness d) on top of a SiOx layers grown on top of a PET (bulk) substrate, where the ambient is air (ε1(ω) = 1, ε2(ω) = 0, for all

energy values ω). his is shown in Figure 29.11. In order to take into account the optical response of the intermediate SiOx layer deposited directly onto the PET substrate, the SiOx layer thickness and optical properties has been measured in advance. his information has been used for the analysis of the measured 〈ε(ω)〉 from the complete hybrid/SiOx/PET layer stack. he dependence of the optical parameters deduced from the 〈ε(ω)〉 analysis (fundamental gap Eg and electronic transition E 0) as a function of the SiO2—NP content in two representative hybrid polymers (hybrid #1, hybrid #2) is shown in Figure 29.12. It is clear that the hybrid #2 is characterized by higher optical

SiO2—NP (60 nm) SiO2—NP (100 nm) Hybrid polymer Inorganic interlayer SiOx or AlOx

PET flexible polymeric substrate Roughened back surface

FIGURE 29.11

heoretical structure used for the analysis of the measured 〈ε(ω)〉 spectra of the hybrid barrier layers.

29-13

Nanometrology 6.0

Fundamental gap energy ωg (eV)

3.0 Hybrid #2

2.8

5.8

2.6

5.6

2.4

5.4 Hybrid #1

2.2

2.0

0

5

10

15

5.2

20

25

30

5.0

SiO2—NP content (%)

FIGURE 29.12 Dependence of the fundamental energy gap Eg of the two hybrid materials as a function of the content of SiO2—NP.

transparency due to the higher values of the fundamental energy gap Eg, from 5.5 eV (0% SiO2—NP) to 5.8 eV (30% SiO2—NP). However, the hybrid #1 is characterized by lower optical transparency (Eg values in the range of 2.2–2.4 eV), and the increase of the amount of SiO2—NP results in a slight decrease in the fundamental gap Eg (reduction of the material’s transparency) as well as a reduction of E 0 values (Laskarakis et al. 2009). In addition to the above investigations, the optical measurements of the hybrid polymers with embedded nanoparticles in the IR spectral region can provide information about the diferent

bonding groups based in the study of their vibration modes. In Figure 29.13 the imaginary part 〈ε2(ω)〉 of the measured 〈ε(ω)〉 of a representative hybrid layer with various SiO2—NP contents deposited onto PET substrates are shown. Above 1800 cm−1, the samples are optically transparent and their 〈ε(ω)〉 spectra are dominated by Fabry–Pérot oscillations due to the multiple relections of light at the hybrid polymer, SiOx nanolayer, and PET interfaces. Among the more intense vibration bands, we can distinguish the glycol CH2 wagging peak at 1340 cm−1 and the intense complex bands around 1240–1330 cm−1 that arise mainly from ester group vibrations. Also, the stretching mode of the carbonyl C=O group of PET is shown at 1720 cm−1. he contribution of the Si—O bonding vibration is dominant in the wavenumber region of 1050–1100 cm−1. It is clear from Figure 29.13 that the increase of the SiO2—NP content in the hybrid layer is associated to the increase of the Si—O vibration mode in the area of 1050 cm−1. he efect of the several vibration modes on the complex dielectric function can be described by Equation 29.16. For the parameterization of the Si—O stretching vibration, the 〈ε(ω)〉 spectra has been analyzed by the use of a four-phase model (air/(hybrid + SiO2—NP)/SiOx/PET substrate). he parameters that have been itted are the thickness and the optical properties of the hybrid polymer layer by the use damped harmonic oscillator at the wavenumber region of 1070 cm−1 in order to describe the optical response of the Si—O bonding group, as well as the volume fraction of the SiO2 phase (describing the embedded SiO2—NP) (Logothetidis and Laskarakis 2008). he oscillator strength f of the Si—O bonding group has been found to increase with increasing SiO2—NP content. his is due to

6 C O Stretching mode

Ester modes 4

Si—O CH2 wagging mode (trans)

ε2(ω)

2

0 CH2 stretch 1% SiO2 5% SiO2

–2

10% SiO2 20% SiO2

C—O stretch

30% SiO2 –4 900

1000

1100

1200

1300

1400

1500

1600

1700

1800

Wavenumber (cm–1)

FIGURE 29.13 Measured of imaginary part 〈ε2(ω)〉 in the IR spectral region of the hybrid barrier materials with embedded SiO2—NP of diferent percentages at an angle of incidence of 70°.

29-14

Handbook of Nanophysics: Principles and Methods

1100

Hybrid #1 Hybrid #2

Si—O vibration energy (cm–1)

1095 1090 1085 1080 1075 1070 1065 1060 1055 1050 0

5

10 15 20 SiO2—NP content (%)

25

30

FIGURE 29.14 Dependence of the bonding vibration energy of the Si—O group as a function of the SiO2—NP content in the two hybrid materials.

the enhanced contribution of the Si—O bonds from both the SiO2— NPs and the inorganic component of the hybrid polymer. he calculated values of the Si—O stretching vibration energy and their dependence with the content of the SiO2—NP in two representative hybrid materials are shown in Figure 29.14. It can be seen that the increase of the SiO2—NP content is correlated with an increase of the Si—O vibration energy from 1058 (for 1% SiO2—NP) to 1091 cm−1 (for 30% SiO2—NP) in hybrid #1, whereas in the case of hybrid #2, this increase takes place from 1069 to 1097 cm−1. Since the value of the Si—O bonding vibration energy is associated with the stoichiometry x of the material (Pai et al. 1986), the increase of the SiO2—NP results to hybrid polymer materials, which are characterized by a higher amount of Si—O bonds (Logothetidis and Laskarakis 2008, Laskarakis et al. 2009). he above indings can be combined with the results obtained from other nanometrology tools in order to provide a complete

aspect of the materials that are used for state-of-the-art applications, such as lexible organic electronics. For example, AFM can be employed for the imaging of the SiO2—NPs that are embedded in the hybrid polymer materials. Figure 29.15a and b shows the surface morphology and phase image of a hybrid polymer sample, which contains 10% SiO2 nanoparticles and was deposited on a PET substrate. Nanoparticles of about 60 nm in diameter are clearly observed embedded in the organic polymer matrix. he phase image shows a high contrast between the two materials. he values of the RMS surface roughness is Rq = 2 nm and peak-to-valley distance is 20.4 nm. Also, from the above, it is clear that spectroscopic ellipsometry can be employed for the investigation of the optical properties of barrier layers deposited onto PET substrates and of the efect of the inclusion of SiO2—NP on their microstructure, optical properties, and functionality. he optical properties were measured in an extended spectral region from the IR to the Vis–fUV spectral region in order to stimulate diferent lightmatter mechanisms (bonding vibrations, interband transitions), that will provide signiicant insights on their properties. hese results demonstrate the importance of optical characterization of barrier materials on the understanding of the mechanisms that dominate their functionality with the aim to optimize their optical and barrier response in order to be used for the encapsulation of lexible organic electronic devices.

29.2.1.5 Real-Time Optical and Structural Studies of Nanolayer Growth on Polymeric Films In-situ and real-time SE is a powerful, nondestructive and surface sensitive optical technique used to monitor the deposition rate and the growth mechanisms of thin i lms during their deposition (Logothetidis 2001, Gravalidis et al. 2004). he implementation of real-time SE monitoring and control to large-scale production of functional thin i lms for numerous applications 2.5

20 2.5

2.5 2.0

18

1.5

2.0

16

2.0

1.0

14

8

1.0

0 °

nm μm

μm

10

0.5

1.5

12

1.5

–0.5

1.0

–1.0

6 4

0.5

–1.5

0.5

–2.0

2 0 (a)

0

0.5

1.0

1.5 μm

2.0

2.5

0

0 (b)

0

0.5

1.0

μm

1.5

2.0

2.5

–2.5

FIGURE 29.15 (a) AFM image and (b) phase image of a hybrid polymer with 10% of SiO2 nanoparticles. he scan size is 2.7 × 2.7 μm2.

29-15

Nanometrology

will lead to the optimization of the materials quality and increase of production yield (Logothetidis 2001, Gravalidis et al. 2004). In the following, we will show some representative examples concerning the real-time investigation of the optical properties of the growing SiOx thin ilms deposited onto PET substrates by electron beam evaporation process in an ultrahigh vacuum (UHV) deposition chamber. he investigation of the optical properties has been performed in the Vis–fUV energy region (1.5–6.5 eV or 190–826 nm) by an ultrafast multiwavelength phase-modulated spectroscopic ellipsometer that was adapted onto the UHV chamber at an angle of 70°. his system is equipped with a 32-iber-optic array detector for simultaneous measurements at 32 diferent wavelengths (MWL mode), in the energy range 3–6.5 eV. he sampling time (ST) of the MWL measurements (time interval between subsequent measurements) were 200 and 500 ms, whereas the integration time for each measurement was 100 ms. In this way, it is possible to realize the real-time investigation of the growth mechanisms of the deposited inorganic thin i lms. Figure 29.16 shows the evolution of the measured imaginary part 〈ε2(ω)〉 in the 3–6.5 eV region with the deposition time. he 〈ε2(ω)〉 of the PET lexible substrate is shown with black squares (■) whereas the evolution of the 〈ε2(ω)〉 (shown with gray lines) with time indicates the growth of the inorganic ilm on top of PET substrate. he last spectrum indicated by hollow circles (○) is measured by the monochromator unit of the SE system in the energy range 3–6.5 eV with a 20 meV step. he determination of the optical and electronic properties of the SiOx thin i lms has been realized by the analysis of the measured pseudodielectric function 〈ε(ω)〉 with the TL dispersion model (see Equation 29.19) (Jellison and Modine 1996). he geometrical structure that has been used for the analysis procedure

4

PET substrate (before SiOx deposition)

3

ε2(ω)

2 1 0 –1 –2 3.0

SiOx/PET (after SiOx deposition) 3.5

4.0

4.5 5.0 Photon energy (eV)

5.5

6.0

6.5

FIGURE 29.16 he time evolution of the imaginary part of the measured pseudo-dielectric function 〈ε(ω)〉 = 〈ε1(ω)〉 + i〈ε2(ω)〉 obtained for the lexible PET substrate and the deposition of the SiOx i lm by e-beam evaporation.

includes a three-phase model that consists of air, the inorganic layer of thickness d, and the lexible polymeric substrate. Based on the analysis of the 〈ε(ω)〉 spectra, the evolution of the SiOx ilms thickness and optical properties can be evaluated with the deposition time. he best-it parameters for the evolution of the SiOx i lm thickness d and the deposition rate (derivative of the thickness as a function of the deposition time) are shown in Figure 29.17. As it can be seen, the growth of the SiOx ilm onto PET can be separated into three distinct stages, according to the growth mechanisms that take place (Laskarakis et al. 2010). hese stages are the following: • Stage I: During this stage, there is a sudden increase of the deposition rate and the i lm’s thickness. his increase takes place for the irst 1 s to the values of i lm thickness up to 50 Å. his is attributed to the formation of a composite material on the substrate that consists of PET and of the growing i lm. his is associated with the modiication of the PET surface from the arrived SiOx (charged and neutral) particles and species as well as from the ultraviolet radiation emitted by the plasma (Koidis et al. 2008). • Stage II: he thickness increases rapidly with a high deposition rate of ∼60 Å/s, which remains stable for the period 1 < t < 5 s, leading to a thickness value of ∼300 Å. his behavior can be attributed to the formation of separate clusters of the growing ilm’s surface. hese clusters are growing homogeneously during stage II (Koidis et al. 2008). • Stage III: he coalescence of the individual clusters and the homogeneous ilm growth for both i lms takes place. he deposition rate at higher deposition times (t > 5 s) follows a constant but rapidly oscillating behavior. he oscillation of the deposition rate is characteristic of the island-type growth and deines the distinct growth stages (Gravalidis et al. 2004). In addition to the study of the growing mechanisms, the evolution of the electronic and optical properties of SiOx i lms can be interpreted by the parameters of TL model (Equation 29.19) and provide valuable information in terms of their compositional and nanostructural properties, as well as on the stoichiometry. Firstly, the energy position of the maximum absorption E 0 determines the electronic transitions and depends on the stoichiometry of the material. E 0 shows a signiicant diference for the SiO2, and SiO, and SiOx i lms, as shown in Figure 29.18. In the case of SiO2 ilm, the E 0 values exhibit luctuations between 9 and 11 eV, and they are eliminated ater the completion of the irst ∼35 s of the deposition time, taking an almost constant value of approximately 11 eV. Similar behavior is also obtained for the E 0 of the SiOx i lm, with its value to be stabilized to ∼7 eV. On the contrary, for the SiO i lm we obtain a gradual increase in E 0, with its constant value to reach ∼6.2 eV. If we take into account the E 0 of the reference bulk SiO2 and SiO materials, i.e., 10.8 (Palik 1991)–12.0 (Herzinger et al. 1998) and 5.7 eV (Palik 1991), respectively, we can verify the respective x values for the studied SiO2 and SiO i lms. Furthermore, the estimated x value for the SiOx i lm should be 1 < x 80 42–45 42–45 42–45 42–45

0.125 0.288 0.592 0.100 0.440 0.271 0.902 1.002

Note: he calculated HSA/Fib ratio is also included.

1.0

ta-C a-C a-C:H

HSA/Fib ratio

0.8

0.6

0.4

0.2

0.0 1.25

1.50

1.75

2.00 2.25 Refractive index n

2.50

2.75

FIGURE 29.26 he calculated HSA/Fib ratio for the studied carbon-based thin i lms, versus the refractive index n(ω = 0 eV).

region has been used for the detailed study of the bonding structure of the absorbed proteins and platelets onto the a-C:H thin i lms. he angle of incidence of the IR light onto the samples was 70° and the measurements have been performed for 30 min, ater 24 h incubation of the thin i lms into single HSA and Fib solutions and ater 30 min incubation of the sample into plasma rich in platelets (PRP), in ambient environment. FTIRSE is a nondestructive optical technique for investigation of vibrational properties of samples, which provides identiication of IR responses even at a monolayer level, and it can be used for the investigation of the optical properties in a variety of media (vacuum, air, transparent liquids, etc.) without special conditions for the measured materials. Its capability for data acquisition time down to 2 s, allows its application for in-situ and real-time monitoring of processes. By using FTIRSE, the characteristic bands corresponding to the diferent bonding structures of the HSA and Fib proteins have been investigated. However, due to weak contribution of

the characteristic vibration bands, and in order to deduce accurate results from the analysis of the protein/a-C:H IR spectra, we have used the ellipsometric optical density D dei ned by the relation D = ln(ρs/ρ), where ρ and ρs refer to the ellipsometric ratio of the protein/a-C:H and of the a-C:H, respectively. Figure 29.27 shows the real (Re D) and imaginary (Im D) part of the optical density D of the a-C:H thin i lm, on which the HSA and Fib proteins have adsorbed. As it can be seen in Figure 29.27, the contribution of the complex vibrational modes Amide I and Amide II are evident, which are characteristic of the protein secondary structures. Amide I corresponds to the absorption modes in the 1615–1700 cm−1 region involving all the C=O peptide groups whereas the Amide II absorptions in the 1560– 1510 cm−1 range are related to CONH units (C—N stretching coupled with N—H bending modes). Also, the multiple bands at the 1000–1300 cm−1 are attributed to the complex stretching vibration of C—O attached to diferent bonding structures of the protein backbone.

29-22

Handbook of Nanophysics: Principles and Methods –0.05

0.6 HSA/a-C:H FIB/a-C:H

Amide II bands (N—H bend and C—N str.)

1685

Amide I bands Re D

1558 1520

0.5

–0.10

–0.15 Im D

Re D

0.4 Im D

–0.20

0.3

0.2

–0.25

1651 Amide I bands (H-bonded CO in regular a-helices and C O)

C—O str. complex vibr. bands 0.1 900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

–0.30 2000

Wavenumber (cm–1)

FIGURE 29.27 Real (Re D) and imaginary (Im D) part of the ellipsometric optical density D, of a-C:H thin i lm, with HSA and Fib proteins adsorbed onto the surface (incubation time 24 h),

FTIRSE has also been employed for the identiication of the bonding structure of the adsorbed platelets onto the a-C:H thin ilms. Figure 29.28 shows the measured pseudodielectric function 〈ε(ω)〉 = 〈ε1(ω)〉 + i 〈ε2(ω)〉 of the platelet/a-C:H sample as obtained by the FTIRSE technique. he 〈ε(ω)〉 spectra has been acquired in t = 30 min, whereas the high intensity of the IR light relected from the sample surface indicates an enhanced contribution of the IR-active bands of the plasma, which is mostly composed of platelets. As can be seen from Figure 29.28, the contribution of the diferent vibration bands is intense in the measured 〈ε(ω)〉

by FTIRSE. Among the various vibration bands, we can distinguish the Amide III band at ∼1242 cm−1, the vs CO2 symmetric stretching mode at 1397 cm−1, the Amide II band (C—N stretch, N—H bending) at 1535 cm−1, the Amide I band (C—O stretch) at ∼1643 cm−1, and the Amide A band (N—H stretch) at 2971 cm−1. he enhanced contribution of these vibration bands and mainly of the irst two ones correspond mainly to the bonding structure of the platelets and indicates their existence onto the a-C:H surface. he phenomenon of protein adsorption can be monitored in real-time by using in-situ and real-time SE. his is a powerful, 4

8

Amide II band (C—N stretch N—H bending)

3

Amide A band (N—H stretch)

6

ε2(ω)

ε1(ω)

2 4

2

1

Amide I band (C—O stretch)

vs CO2 Amide III band

0

0

Blood platelets/a-C:H –1 1200

1500

1800

2100

2400

2700

3000

3300

Wavenumber (cm–1)

FIGURE 29.28 FTIRSE 〈ε(ω)〉 spectra of human plasma rich in platelets adhered on Floating a-C:H thin i lms (incubation time 30 min).

29-23

Nanometrology

nondestructive and surface sensitive optical technique used to monitor the deposition rate and the growth mechanisms of thin i lms during their deposition. he in-situ and real-time monitoring of Fib adsorption has been performed by an ultrafast multiwavelength (MWL) phase-modulated ellipsometer in the visible to far ultraviolet (Vis–fUV) energy region (1.5–4 eV). his system was equipped with a 32-iber-optic array detector for simultaneous measurements at 32 diferent wavelengths (MWL mode), in the energy range 1.5–4 eV. he sampling time of measurements was ST = 500 ms and the angle of incidence was 60°. A special solid–liquid cell was used for the experiment. In Figure 29.29, the experimental data of random in-situ measurements of a-C:H sample and Fib on a-C:H as a function of time (from 16 to 5300 s for pH 7.4) and representative itting results (insets) are presented (Lousinian and Logothetidis 2008, Lousinian et al. 2008). An appropriate ellipsometric model (see insets of Figure 29.29) was developed for the real-time investigation of Fib adsorption, providing valuable information about the thickness and composition changes of the Fib layers formed on the a-C:H thin i lms during adsorption. More precisely, the protein adsorption is considered as a thermodynamic phenomenon, which takes place spontaneously whenever protein solutions contact solid surfaces, but it is not yet fully described. A simple

yet reasonable description of protein adsorption is the one of reversible attachment in an initial state followed by a subsequent change to a more strongly bound state involving greater surface contact. In the initial stages of protein adsorption, when the surface coverage is low, the protein molecules transform immediately from the solution to the adsorbed state. A slow saturation of adsorption kinetics is observed and the number of molecules in their native form is gradually decreased to zero, while the number of the protein molecules in their adsorbed form is maximized, as the equilibrium of the phenomenon is reached. herefore, it is supposed that each moment there is a layer formed on the a-C:H i lm surface that is consisted of Fib molecules that are in native state (as in Fib solution) and in bound state (adsorbed Fib). We also supposed that the volume fraction of the adsorbed Fib increases during the evolution of the protein adsorption, reaching its maximum (∼100%) when the equilibrium of the phenomenon takes place. hus, supposing that the protein layer formed on a-C:H thin i lm is composed by adsorbed Fib and molecules of Fib in the solution, with the volume fractions of the two phases varying through time, then Bruggeman efective medium approximation (BEMA) (Bruggeman 1935) can be used to estimate the volume fraction of Fib in adsorbed and liquid state. he BEMA is one case of the efective-medium theories (EMT) that 360

80

60 55 50

50s

exp sim

45

220

540 s

220

40

200

35

180

30

160

40

200

35

180

30

160

25

140

25

140

20

120

20

120

15

100

15

100

1.5

2.0

2.5 3.0 Photon energy (eV)

3.5

Psi

65

Psi

70

exp sim

1.5

4.0

2.0

2.5 3.0 Photon energy (eV)

3.5

340 320 300 280 260

4.0

240

45 Psi

220 40 5300 s

35

180

30

160

25

16 s 140

20

120

15 10 5 1.5

200

a-C:H

16 s

5300 s 100

a-C:H 2.0

2.5

3.0

3.5

Photon energy (eV)

FIGURE 29.29 Measured Psi and Delta ellipsometric angles for a-C:H thin i lm and for Fib/a-C:H at pH 7.4.

4.0

80

Delta

45

Delta

75

240

Delta

50

29-24

Handbook of Nanophysics: Principles and Methods

are used to describe the macroscopic dielectric response of microscopically heterogeneous materials, such as bulk i lms including both compositional and shape aspects. More speciically, in the case of a composite i lm this has an efective dielectric function that depends on the constituent fractions shape, and size, as well as on the orientation of the individual grains. he use of EMTs allows the calculation of the macroscopic dielectric response of these heterogeneous materials from the dielectric functions of its constituents ε∼i and the wavelength-independent parameters fi. hus, EMTs appear as a basic tool in material characterization by optical means and can be used if the separate regions are small compared to the wavelength of the light but large enough so that the individual component dielectric functions are not distorted by size efects. All EMTs should obey in the quasistatic approximation and can be represented by the relation: ɶε − ɶεh = ɶε + κεɶh

∑ f ɶεε +−κεεɶ , ∑ f = 1, ɶi ɶh

i

i

i

i

h

(29.21)

i

where κ accounts for the screening efect (for example, for spheres κ = 2) εh the host dielectric function BEMA is self-consistent with ε = εh and in the small sphere limit (κ = 2) of the Lorentz-Mie theory (Niklasson and Granqvist 1984) Equation 29.24, gives ɶεi − ɶε

∑ ɶε + 2ɶε f = 0, ∑ f = 0. i =1

i

i

i

(29.22)

i

he use of BEMA will lead to the description of the Fib adsorption phenomenon, taking into account the efect of the liquid ambient in the suggested model. TL model (Equation 29.17) was used to parameterize the dielectric function with the optical

constants on the wavelength of light for Fib solution and the adsorbed Fib dielectric functions (Lousinian and Logothetidis 2008, Lousinian et al. 2008). In Figure 29.30a and b, the evolution of Fib thickness and the volume fraction of adsorbed Fib with time during Fib adsorption on a-C:H samples with (namely biased) and without (namely loating) the application of negative bias voltage are shown, respectively. hickness reaches its maximum value at about 2600 s on the loating sample, which means that the equilibrium of the phenomenon is then reached, while on the biased sample the equilibrium is reached earlier, at about 1200 s (Figure 29.30a). he irst molecules of Fib come in contact directly with the i lm surface, and then the thickness and the volume fraction of adsorbed protein are increasing extremely fast, until the whole surface is covered by the protein layer. Ater this stage, the interactions between the Fib molecules start to take place, and the thickness of the layer is increasing until it reaches its maximum. his is monitored and coni rmed quantitatively with nanoscale precision by the use of real-time SE technique. It is observed that the Fib thickness as well as the volume fraction of adsorbed Fib is larger on the loating a-C:H thin ilm, especially at the initial stage of the protein adsorption. his could be attributed to the surface topography of the a-C:H thin ilms. As mentioned, the surface roughness Rrms of the loating sample (∼2 nm) is one order of magnitude larger than that of the biased sample (∼0.3 nm). his means that the topography of the loating a-C:H thin i lm ofers a larger area for the Fib molecules to bind and to transform to the adsorbed form of Fib. Another feature that difers between the two studied samples is the variation of the thickness and the volume fraction of adsorbed Fib during time (Figure 29.30a and b). A continuous increase of both thickness and volume fraction of adsorbed Fib takes place on the loating sample, while on the biased sample, variations of the values of the above parameters occur, revealing the conformational changes of the Fib molecules during the adsorption. his could be due to the diferent bonding coniguration of

80 100 Volume fraction (%) of adsorbed Fib

Fib/a-C:H floating Fib/a-C:H biased

75

Fib thickness (nm)

70 65 60 40 35

Liquid (solvent) ambient

30

Composite layer Adsorbed Fib & Fib solution

25

a-C:H thin film c-Si

20 15 (a)

0

1000

2000

3000 Time (s)

4000

90 80 70 60 50

Liquid (solvent) ambient Composite layer Adsorbed Fib & Fib solution

40

a-C:H thin film c-Si

30 5000

0 (b)

1000

2000

Fib/a-C:H floating Fib/a-C:H biased

3000 Time (s)

FIGURE 29.30 Evolution of (a) Fib thickness and (b) volume fractions of adsorbed Fib, on the loating and biased thin i lm.

4000

5000

29-25

Nanometrology

the two samples and the bonds, which are formed at the interface between the a-C:H surface and the protein molecules on it (Lousinian and Logothetidis 2008, Lousinian et al. 2008).

0 1 2

29.2.2 Low-Angle X-Ray and Relectivity Techniques on the Nanoscale

… Zj

he most interactions taking place between electromagnetic radiation in x-ray region and a surface are: transmittance, absorption, relection (specular relection), and scattering (nonspecular relection). he critical quantity in these interactions and phenomena is the refractive index n of the material under study. We can easily see from Equation 29.17 that in the x-rays energy region n is a complex quantity close to unit and is given by n = 1 − δ + i β,

(29.23)

where the real part corresponds to the dispersion and the imaginary to the absorption of x-rays, in the matter. he value of δ ranges between 10−6 and 10−5 and is proportional to the electron density ρe, whereas β is even smaller. he parameter δ is also related to the critical angle of total relection θc through the expression (Daillant and Gibaud 2009) sin θc2 = 2δ =

λ2 re ρe . π

(29.24)

In this expression λ is the x-rays wavelength and re is the electron radius. he critical angle for the most of the materials lies in the angular range between 0.2° and 0.6°. In the following paragraphs, the intensity of the relected beam at low angles is expressed in terms of the angles of incidence, relection, and the refractive index. 29.2.2.1 X-Rays Specular Relection For the case of the specular relection, where the angle of incidence and the angle of relection are equal, the intensity is proportional to Fresnel relectivity. he x-rays specular relection (XRR) is applicable in the thin i lm multilayer structures, such as in Figure 29.31. In this case the relected intensity is proportional to |R0|2, where R0 is calculated by the recursive formula: Rj = e rj , j +1 = kz , j =

− i 2 kz , j z j

rj , j +1 + R j +1e

i 2 kz , j z j

1 + rj , j +1 ⋅ R j +1e

i 2 kz , j z j

,

kz , j − kz , j +1 , kz , j + kz , j +1

(29.25)

2π sin2 θ − sin2 θc , j − i2β j . λ

In Equation 29.25 θc,j and βj are the critical angle and the absorption of the j-layer. his means that except of the layer thickness zj, also the layer density (Equation 29.24) can be calculated.

kin, j

j Zj + 1

ksc, j

j+1

Zn Substrate

FIGURE 29.31 Illustration of the plane of incidence for a multilayer structure. Air is labeled medium 0 and the strata are identiied by i < j < n layers in which upwards and downwards waves travel.

In the case of a thin layer over a substrate, the relectivity is given by the formula R0 =

r0,1 + r1,2e −i 2kz ,1h , 1 + r0,1 ⋅ r1,2e −i 2 kz ,1h

(29.26)

where h is the i lm thickness. he surface and interface roughness σi of the thin ilm can be incorporated in the relectivity with a Debye–Waller factor in the Equation 29.25 of the Fresnel coeicient like rjrough , j +1 =

kz , j − kz , j +1 −2kz , j kz , j+1σ2j+1 e . k z , j + k z , j +1

(29.27)

As an application of the utilization of the above formulations we present, in the next few paragraphs three characteristic examples of XRR measurements, each with a unique concern. At irst, we present an example of a SiO/SiO2 multilayer structure and the formation of Si nanocrystals through the annealing of the multilayer structure. hen we show a characteristic example of a Ti/TiB2 multilayer developed on c-Si substrates and the application of an alternative method to calculate each layer and the bilayer thickness called low-angle x-ray dif raction; its principles lies in relection though. Finally, we show an implementation of XRR technique to study the structural evolution of a-C i lms developed on c-Si (100) substrates. he SiO/SiO2 multilayer was deposited on c-Si using the e-beam evaporation technique (Gravalidis and Logothetidis 2006, Gravalidis et al. 2006). he high-temperature annealing (∼1100°C) results in the phase separation of the ultrathin SiO layers and formation of Si nanoparticles surrounded by amorphous SiO2 , which is described by the equation SiOx → (x/2)SiO2 + (1 − x/2)Si (Yi et al. 2003). Alternative a-Si/SiO2 systems can have the same results during annealing (IoannouSougleridis et al. 2003).

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Handbook of Nanophysics: Principles and Methods

100 As grown

10–2 10–4 10–6 100

500°C annealing

10–2

Reflectivity

10–4 10–6 100

800°C annealing

10–2 10–4 10–6 100

1100°C annealing

10–2 10–4 10–6 0.0

FIGURE 29.32 annealing.

0.5

1.0

1.5 2θ (deg)

2.0

2.5

3.0

he XRR spectra of the samples before and ater

4.5

2.35 Thickness Density

4.0

2.30 2.25 2.20

3.5

2.15 3.0

2.10

Density (g/cm3)

SiO layer thickness (nm)

he processes take place during annealing can be divided to two stages (Yi et al. 2002, 2003): (a) stage 1 (300°C–900°C): Rearrangement of SiO and SiO2 components and initialization of the nc-Si nucleation; and (b) stage 2 (900°C–1100°C): the phase separation of nc-Si and SiO2 has inished and Si cluster are being further crystallized. Further annealing does not have any efect on Si—O bond. XRR takes advantage of the small wavelength (λCuKa = 0.154 nm) of x-rays, which is appropriate for the structural study of multilayered system. XRR was applied in the range from 0° to 3° and the spectra for the samples are depicted in Figure 29.32. At angles below critical angle θc, which is proportional to the mass density, there is the plateau indicating the region of the total relection of x-rays and for angles above θc the relectivity decays almost exponentially. Additionally, due to the layer thickness, interference fringes appear in the spectrum. he data were itted using a model consisted of SiO2/(SiO/SiO2) × 3/c-Si (Gravalidis and Logothetidis 2006, Gravalidis et al. 2006) and using Parrat’s formalism combined with a Nevot–Croce factor for the description of the surface and interface roughness (Parratt 1954, Nevot and Croce 1980). hus, thickness, roughness, and density of the i lm can be calculated. What was found from the above analysis is that for the SiO layers the thickness is decreasing and the average density of the multilayer is increasing with the increase of annealing temperature as it is shown in Figure 29.33. h is

2.05

2.5

2.00 2.0

0

200

400 600 800 Temperature (°C)

1000

1.95 1200

FIGURE 29.33 he average density (circles) and the thickness (rectangle) of the SiO layers and with the annealing temperature. he point in the circle corresponds to the model SiO2/(Si/SiO2)×3/c-Si used for the description of the data.

densiication can be assigned to the dissociation of SiOx, which enhances the formation of the denser SiO2 and Si compounds. In the case of the sample annealed at 1100°C, the model used for the lower temperatures failed to describe the data well. h is is rather expected due to the phase separation and the breakdown of the layered structure that are taking place at this temperature. To overcome this problem, we replaced the SiO layers with Si layers and the whole analysis gave a total thickness of 28 nm. he phase separation that is taking place at this temperature is one of the reasons for the increase in the thickness. h is probably means the strain efects during the formation of the nc-Si in the SiO2 matrix from SiOx, instead of creating a single interface between the two materials, create a transition layer of stressed SiO2 and Si, surrounding the nc-Si as it is reported elsewhere (Daldosso et al. 2003). A second typical example of an XRR measurement of a Ti/TiB2 multilayer i lm is shown Figure 29.34. he i lm consists of 24 alternating layers of Ti and TiB2 (Kalfagiannis et al. 2009). he peaks that are observed in these patterns indicate the superimposed bilayer proile. Using Parratt’s formalism we calculated the total thickness of the i lm at 513 nm while each layer of Ti was calculated at 9.8 nm and TiB2 at 11.7 nm. Fluctuations on the layer thickness of TiB2 were calculated at 0.9 nm and of Ti at 0.5 nm. he Ti/TiB2 multilayer sample was prepared in a high vacuum chamber employing the unbalanced magnetron sputtering technique (Logothetidis, 2001). he multilayer structure was achieved through the rotation of the c-Si (100) substrate between two targets (Ti and TiB2) with a rotation speed of 1 rpm (Kalfagiannis et al. 2009). In order to achieve a more comprehensive structural study of the multilayer structures the implementation of XRR in higher angles can clearly determine the bilayer thickness of the i lms. LAXRD (low-angle XRD) technique results from the relection

29-27

Reflectivity

Nanometrology

LAXRD intensity

(a)

0

1

2

(b)

4 5 6 Bragg angle 2θ (deg)

7

8

9

10

A representative XRR and LAXRD patterns of a Ti/TiB2 multilayer (Kalfagiannis and Logothetidis, unpublished data).

of x-rays by the interfaces between layers. hus, LAXRD can be regarded as an alternating XRR method and its results are not afected by the crystalline quality within each layer. he relectivity of an interface between two layers in a multilayer depends on the diferences in electron density of the two layers. In principle, low-angle XRD directly gives the Fourier transform of the electron density, which is related to the composition modulation. However, refraction and absorption efects become important at small angles making these patterns dificult to interpret (Yashar and Sproul 1999). An example of a low-angle XRD pattern from a Ti/TiB2 multilayer is shown in Figure 29.34b. he observed peaks occur at position 2θ given by a modiied form of Bragg’s law: 2

⎛ mλ ⎞ sin2 ϑ = ⎜ + 2δ, ⎝ 2Λ ⎟⎠ where 2θ is the angular position of the Bragg peak m is the order of the relection λ is the wavelength of the x-rays (1.5406 Å for CuKa light) Λ is the bilayer period By plotting the sin2θ versus (mλ/2)2 one can easily calculate, from the slope of the itted line, the bilayer period, as shown in Figure 29.35. XRR technique is also used to identify the growth evolution of thin i lms and several other important nanoengineering parameters related with the density, and their morphology.

0.0012 0.0010 0.0008 sin2θ

FIGURE 29.34

3

0.0006 1/Λ2

0.0004 0.0002

Λ = 21 nm 0.0000

0

5

10

15

20

25 30 0.6 m2

35

40

45

50

FIGURE 29.35 A graphic example of how the bilayer thickness of a multilayer can be calculated from a LAXRD pattern. he itted line crosses through zero. his is due to the fact that δ can be neglected from modiied Bragg’s law, since typical values of δ are ∼10–6. he slope of the line is directly related to Λ.

We will give here a representative example of magnetron sputtered amorphous carbon (a-C) thin i lm developed without (MS) or with ion irradiation (BMS) during deposition, by applied a negative bias V b on the Si substrate. X-ray relectivity scans obtained from successive ultrathin a-C layers, grown by MS on Si substrate, are shown in Figure 29.36a. Figure 29.36b also shows details from the same scans close to θc. he arrows

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Handbook of Nanophysics: Principles and Methods

Vb = +10 V

1 2 3 4

Reflectivity (a.u.)

5

Normalized reflectivity

100

Δθc

θc

Vb = +10 V 1 2

σ

3 4

0.0 (a)

0.2

0.4 0.6 0.8 1.0 1.2 Scattering angle 2θ (deg)

1.4

1.6

10–1 0.38 (b)

5 0.40

0.42 0.44 0.46 0.48 Scattering angle 2θ (deg)

0.50

FIGURE 29.36 (a) he evolution of XRR scans of successive deposited a-C layers by MS and (b) details from the same scans close to critical angle θc; the arrows indicate the variation of θc with thickness and the efect of surface roughness to the line shape. 2.8

Density (g/cm3)

2.6 2.4 2.2 2.0 1.8 (a)

Surface roughness (nm)

indicate the variation of θc with thickness and the efect of roughness (σ) to the line shape. A similar study has been carried out for the growth of a-C by BMS with low V b = −20 V. he XRR scans have been modeled using the same Monte Carlo algorithm and taking into account only one Debye–Waller factor for the i lm surface; the i lm interface has been considered atomically sharp. h is procedure was employed because for the ultrathin i lms the electron density variations exhibit spatial resolution comparable to the i lm thickness making the Monte Carlo its with two Debye–Waller factors rather ambiguous. h is is also justiied by the low interface roughness of thick (∼30 nm) films grown by identical conditions (σi = 0 nm for MS and below 0.5 nm for BMS at V b = −20 V). he results of the XRR data analysis for both cases of sputtered a-C ilms (MS and BMS) are presented in Figure 29.37. he density evolution of a-C thin ilms (Figure 29.37a) is strikingly diferent for the two cases. he density of the BMS ilm at the very initial stages of growth is very low and it is typical of a sp2-rich material; then, it gradually increases to reach the steady-state (bulk) value of 2.62 g/cm3, ater thickness of 10 nm. his is in agreement with the computational results (Patsalas et al. 2005). On the other hand, the MS grown i lm exhibits the same density (within the experimental error) with the BMS i lm at the very initial stage of growth. his clearly indicates that the properties of the ultra-thin sputtered a-C i lms (10 nm). Ater the initial stages of MS growth the density gradually drops to 1.88 g/cm3 (Daldosso et al. 2003). 29.2.2.2 X-Rays Nonspecular Relection he case of the nonspecular relection is called x-rays dif use scattering (XDS). he intensity in nonspecular relection is proportional to the diferential scattering cross-section, which is the solution of the Schrödinger equation under the appropriate boundary conditions: −

    ℏ2 (∇2ψ(r ) + k 2ψ(r ))= V (r )ψ(r ), 2m

(29.28)

where ħ is Plank constant m is the electron mass ∇2 the second derivative ψ(r⃗) is the function of the electron-ield k = 2π/λ (λ is the wavelength of x-rays) is the magnitude of the wave vector Distorted-wave Born approximation is one of the solving method. Sinha et al. (1988) derived the expressions for the differential scattering cross-section, by splitting the interaction potential V(r⃗) in two parts, the unperturbed part correspond to smooth surface and the perturbation correspond to the roughness. Thus, the nonspecular (diffuse) part of the differential scattering cross section from a bare substrate is then given by 2 2 2 dσ diffuse Ak 4 (q) = (1 − n2 ) t F (k1 ) t F* (k2 ) S(qtz ), 2 16π dΩ

(29.29)

where A is the illuminated area Ω is the solid angle of the detector t F(k1) and t F* (k 2 ) are the Fresnel transmission coeicients of the incident and scattered wavevectors k1 and k2, respectively Because the electric ield reaches a maximum of twice the incident ield at the interface when k makes an angle equals to the critical angle θc, |tF(k)|2 is maximum in this case. Hence, whenever θ1 or θ2 equals θc, Equation 29.29 predicts the presence of maxima in the difuse scattering. hese are known as the anomalous (Yoneda) scattering or “angel wings.” he structure factor S(qtz), with qt = (qtx,qty,qtz) = k 2s – k1s being the wave vector transfer in the substrate, is written as

S(qtz ) =

e

(− Re{q }σ ) ∞ 2 tz

qtz

2

2

∫ ⎛⎝ e 0

2

qtz C ( x )

− 1⎞ ⋅ cos(qx x )dx , ⎠

(29.30)

where Re denotes the real part of the complex quantity qtz .

he intensity of the scattered beam is directly related to the type of scan. here are two types of scan for measuring dif use scattering: the rocking scan and the longitudinal scan (ofset or dif use near specular scan). In the case of rocking scan the detector has a i xed position and the sample is being rocked under the condition θ1 + θ2 = θd . he measured intensity then is normalized to the intensity at specular position:

I norm =

1 − ro ⎛ dσ ⎞ ⋅⎜ ⎟ + ro, I max ⎝ dΩ ⎠diff

(29.31)

where ro is the average between the irst and the last point of the spectrum Imax is the maximum intensity at specular position In the case of longitudinal scan (θi = θs ± Δθ) and for θ > θc qtz ≈ qz the scattered intensity is given by (Thompson et al. 1994) 1 − ⎛⎜ 3 + ⎞⎟ h⎠

I ∝ qz ⎝

.

(29.32)

Equations 29.31 and 29.32 are used for the analysis of the XDS spectra to obtain the surface features such as the roughness σ, the correlation length ξ and the Hurst coeicient h. As an example of the utilization of the above formulations we present samples that were prepared by liquid spray coating of PTFE diluted in isopropyl alcohol containing 10% of solids having molecular weight equal to 30,000, density 2.2 g/cm3, and average bulk size 3.7 μm. The melting point of these solids is in the range 322°C–326°C (http://www.dupont.com). The PTFE suspension was sprayed directly on preheated (∼120°C) Si wafers (Gravalidis and Logothetidis 2006). After the spraying the samples were annealed in inert atmosphere up to 350°C. The spraying process is performed as follows: on a moving sample holder, the samples are passing through a preheat process with maximum temperature ∼120°C. The substrate is placed at angle ∼20° with respect to the direction of the movement. Afterwards the heated samples are passing in-front of a spraying plume with specific velocity and due to the high temperature of the substrate the solvent is vaporized and a white powder of PTFE is spread all over surface. The experiments were carried out at three different velocities 1.8, 2.5, and 3.2 m/min, thus the study will be focused on the effect of the material quantity (inversely proportional to velocity) on the surface morphology. For convenience, the samples after the spraying are named as follows: A1 (1.8 m/min), A2 (2.5 m/min), A3 (3.2 m/min), and after annealing B1 (1.8 m/min), B2 (2.5 m/min), and B3 (3.2 m/min) (Gravalidis and Logothetidis 2006). he surface features can be studied using the x-rays dif use scattering at grazing incidence in two ways: longitudinal and

29-30

Handbook of Nanophysics: Principles and Methods

4.5 A1 A2 A3

log (I )

4.0

3.5

3.0

2.5 2.0 4.5

B1 B2 B3

4.0

log (I)

3.5 3.0 2.5 2.0 1.5 –1.7

–1.6

–1.5 log (qz)

–1.4

–1.3

FIGURE 29.38 XDS rocking curves of both A (full points) and B (open points) samples, solid lines represent the itted curves.

rocking scans. In the case of XDS longitudinal scan, the angle of incidence is slightly diferent from the scattering angle and the spectra are depicted in Figure 29.38a as log10I vs log10 qz . For qz > qc the log10I decays linearly with log10 qz , meaning that the intensity depend from the qz exponentially. From the linear it of this region, Hurst parameter h can be calculated through Equation 29.32 (hompson et al. 1994). h is analysis gave that for the B samples the Hurst coeicient h is the same and equal to 0.15, whereas for the A samples is a bit diferent and equal to 0.19. he above results show that the surface morphology of the samples ater annealing become more jagged. his result comes in agreement with the fact that the annealing enhances the untwisting and the entanglements of the macromolecules and furthermore the local distortions from smoothness and regularity. Additionally, the spraying velocity does not seem to have any efect to the inal morphology of the samples. he second type of scan that can give information about the surface features (correlation length and Hurst coeicient) is the rocking curve and the spectra are depicted in Figure 29.39. As can be observed from these curves, the unsintered samples have identical spectrum meaning that the surface morphology is independent from the velocity and thus the quantity of PTFE. On the other hand, the surface morphology of the sintered sample shows signiicant dependence on material’s quantity. Taking into account the results from the of-specular XRR the reason for the diferent surface morphology is probably the correlation length which is related to the distribution of the height luctuations on the surface (Gravalidis and Logothetidis 2006).

A1 A2 A3 B1 B2 B3

1.0

Inormalized

0.8

0.6

0.4

0.2

0.0

–6

–4

–2

0 qx (10–4 A–1)

2

4

6

FIGURE 29.39 (a) XDS longitudinal scans of the samples before and ater annealing and (b) XDS rocking curves of both A (full points) and B (open points) samples.

29-31

Nanometrology TABLE 29.2 Results from the XRR Data Fitting Sample

B1

B2

B3

σ (nm) ξ (nm) h

0.5 126 0.15

0.5 268 0.15

0.5 103 0.15

Following Sinha’s expression for the data itting, we can calculate surface roughness and the correlation length. he Hurst coeicient that is used in the itting procedure is already known from the of-specular XRR. he results from the itting are summarized in the Table 29.2. As is clear from Table 29.2 correlation length ξ depends on the spray velocity, whereas the other parameters do not. his fact means that although the three surfaces have the same roughness, the distribution of the macromolecules is related strongly to the material’s quantity (through spray velocity). he above analysis revealed the high potential of x-rays relectivity techniques and especially XDS technique to describe polymeric surfaces grown by spray coating and sintered at high temperature in inert atmosphere. he grain size of PTFE is decreasing with the material quantity and ater the annealing. Furthermore, for the annealed samples the grain size does not depend monotonically with the quantity, but has a maximum value. he XDS longitudinal scan shows that all the annealed samples have the same surface texture. Finally, the analysis on XDS rocking scans spectra showed for the correlation length that has the same dependence with the spray velocity as the grain size. hus, the most signiicant conclusion from this study is that the surface characteristics do not depend from the spray velocity of PTFE, monotonically or linearly, but exhibit a maximum value for speciic surface features.

29.2.3.2 Background: History and Dei nitions Indentation experiments were irstly introduced in the beginning of the twentieth century by Brinnel, who used smooth ball bearings as indenters. At these conventional indentation experiments, constant load was applied by a theoretically rigid indenter, which penetrated into the sample. Ater the unloading of the indenter, the dimensions of the indentation imprint was measured using an optical microscope and only the hardness of the material was estimated, as the ratio of the applied load divided by the area of the residual imprint (Tabor 2000). Contemporary nanoindentation experiments are based on the same idea, but the indenters are very sharp (with tip roundness usually 5 GPa using the same cantilever were made but to no point. An upper limit of the applied force and pressure is set, irstly, by the AFM apparatus itself (and in particular, by the maximum detectable cantilever delection symbolized by “DFL”) and for this cantilever was around 5000 nN (corresponds to maximum exerted pressure Pmax = 7.9 GPa). On the other hand, limitation to the maximum Pa comes from the cantilever itself and speciically from its spring constant. For cantilevers with higher kc the same force can be achieved with less cantilever delection. In Figure 29.51 the image presents indents made by and AFM cantilever on the surface of the PET. he pits and the surrounding piled-up area are easily distinguished from the other surface characteristics. Analysis of the created pits in terms of their dimensions gives their real and precise geometrical characteristics, which are presented in Figures 29.52 and 29.53. It is

(29.46) 4

In Figure 29.50, the calculated exerted pressure Pa is plotted against the hardness of the samples measured using nanoindentation with a diamond Berkovich indenter. he line stands for Pa values equal to H. According to the previously mentioned condition (Pa ≥ H) for permanent surface deformation, the Pa values should lie either on or above this line. Indeed, this is the case within the error limits, showing that the results from nanoindentation with the AFM are in accordance with those from the nanoindenter. Moreover, for the reasonable question “how such low forces, of the order of a few hundreds of nanonewtons, can deform permanently the surface of hard materials with hardness ranging from 1 to 4 GPa?”, the answer lies in another size efect: the nanoscale contact area between the cantilever tip and the sample surface.

5

2 2

0.5 1

1.5

1

1

1.5 0.5

2 μm 0

FIGURE 29.51 3D AFM image of a pits array on PET surface made by the AFM cantilever, using diferent force Fa for every pit.

12

Pressure = Hardness

0

50

100

150

200

250

300

8

4

a-C:H (Vb = –20 V)

3

4

a-C:H (Vb = –40 V)

a-C:H (Vb > 0) PET

2

1

Height (nm)

Pressure, Pa (GPa)

3

nm 14 0 0

0 –4

Fa = 254 nN

–8

Fa = 507 nN Fa = 760 nN Fa = 1014 nN

–12

0 0

1

2

3

4

5

Hardness, Hf (GPa)

FIGURE 29.50 Pressure calculated using Equation 29.45 versus the hardness of the PET and the a-C:H nanocoatings.

0.0

0.2

0.4

0.6

0.8

1.0

Normalized distance in the plane

FIGURE 29.52 he proi les of the pits presented in Figure 29.44 versus the normalized distance in the plane. he upper scale shows the in plane distance of the pit using Fa = 1041 nN.

29-38

Handbook of Nanophysics: Principles and Methods 14

100

12 #4 10 80

#3

8

#2

70 #1

Width Depth Aspect ratio

60 200

300

400

500 600 700 800 Applied force (nN)

Depth (nm)

Width (nm)

90

6 4

900 1000

FIGURE 29.53 he width, the height and the aspect ratio of the pits presented in Figure 29.44 versus the applied force Fa.

interesting to notice that the shape of all four pits is almost the same, no matter how high the applied Fa values were, and approximately symmetrical, a fact that gives the evidence of vertical penetration. he height and the width of the piled-up area are found to increase as the Fa increases from 254 to 760 nN (Figure 29.52). Further increase of the Fa resulted only to the broadening and deepening of the pits (Figure 29.52). A clearer view of how the Fa afects the geometrical characteristics of the pits is given by the “aspect ratio,” i.e., the ratio of the width over the depth (Figure 29.53). he aspect signiicantly decreases from 12.7 to 8.9 as the Fa increases from 254 to 760 nN. From a phenomenological point of view, this behavior correlates the decrease of the pits width expansion rate and the simultaneous formation and growth of the piled-up area, as Fa increases.

29.2.4 Scanning Probe Microscopy AFM is a microscopy technique that belongs to the family of scanning probe microscopies in which images are obtained from the interaction between a probe and the surface of the sample and not by using light as in optical microscopy. AFM can give images from the surface of both conducting and nonconducting samples with atomic resolution (Binning et al. 1987). In this technique, a cantilever with a very sharp tip at its end (radius of curvature on the order of 10 nm) is scanning line by line the surface of the sample. A laser beam is focused on the backside of the cantilever and is relected onto a photodetector. During scan the tip passes above peaks or valleys causing the cantilever to bend, which in turn results in a displacement of the spot at the photodetector. AFM can work in two modes: constant height and constant force. In constant height mode, this displacement can be directly used to get the topography image of the sample. In constant force mode, the delection of the cantilever can be used as input to a feedback system trying to keep the force constant by keeping the cantilever delection constant, thus moving up and down the scanner in the z-axis, responding to the topography. he movement of the feedback generates the topography image.

When the tip approaches the surface, van der Waals forces start acting upon it. In ambient conditions, there is always a very thin layer of humidity on top of the surface of the sample. When the tip contacts the surface, a meniscus is formed between the tip and the sample, and the capillary force that results holds the tip in contact with the surface. Electrostatic interaction between the probe and the sample, which can be either attractive or repulsive, may appear rather oten (Bhushan 2004, http://www.ntmdt.com). AFM can work in contact, semicontact, and noncontact modes. In contact mode during scan, the tip is always in contact with the surface of the sample. he forces between the tip and the sample are repulsive as shown in Figure 29.54. Contact mode gives easily high-resolution images, but at sot materials such as polymers or biological samples the tip can scratch and damage the sample or move material, which inally results in a distorted and unreal image. For imaging such samples, semicontact and noncontact modes that exert less pressure on the sample can be utilized. In these modes, an ac voltage is applied to a piezo, which induces oscillations to the cantilever. In semicontact mode, the cantilever-tip is oscillating near its resonance frequency and taps the surface at its lowest point of oscillation. he forces in this mode are mostly attractive and become repulsive, when the tip is getting close to the surface. During scan, the feedback system tries to keep the oscillation amplitude constant and the topography image derives by its movement. Simultaneously with topography, a phase shit between cantilever oscillations and driving ac voltage is recorded. his phase image is strongly dependent and provides useful information about the sample properties such as adhesion, elasticity, and viscoelasticity (Bhushan 2004, http://www.ntmdt.com). Similar to the semicontact, at noncontact mode, the cantilever oscillates above the surface but never touches it. his mode is the safest for the sample but it has the lowest resolution from either contact or semicontact mode. Force

Tapping/intermittent contact

Repulsive

Separation distance

Attractive Contact

Noncontact

FIGURE 29.54 Schematic of van der Waals forces as a function of probe-tip–surface spacing [M54].

29-39

Nanometrology

10 μm

50 μm

FIGURE 29.55 Silicon cantilever-tip NSG10 [NT-MDT].

he tips that are typically used are made of silicon or silicon nitride. heir geometric characteristics (see Figure 29.55) play an important role at the resolution and the quality of the AFM images. 29.2.4.1 Investigation of Polymeric Thin Films by Atomic Force Microscopy AFM is an excellent tool for the investigation of the surface morphology for both conducting and nonconducting polymeric i lms. his is of great technological interest, since such i lms are being used in applications as OLEDs or OPVs. AFM can provide information about surface morphology and roughness of insulating polymeric ilms of poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN), which are the most common candidates for substrates in lexible organic electronics. In Figure 29.56, a 5 × 5 μm2 3D image of a PET ilm is presented. AFM can also give useful information about the morphology of organic conducting thin i lms. his is of great importance, since the electrical properties of these i lms is closely related to their morphology. A good example is the polymer complex poly(3,4ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), which is currently being used as a hole transport layer in organic electronics. It is also one of the most promising candidates to replace indium tin oxide (ITO) and act as an anode itself (Snaith et al. 2005). PEDOT is a low-molecular-weight polymer, highly

conductive, and attached on the PSS polymer chain, which is an insulator. PEDOT:PSS spin-coated thin i lms are composed of gel grain-like particles, whose core is PEDOT-rich and the outer layer is PSS-rich. here is also an excess amount of PSS at the grain boundaries (Nardes et al. 2007). Conduction within the grains occurs by hopping transport from one PEDOT segment to another, while conduction between the grains occurs via tunneling as the PSS at the grain boundaries acts as a barrier to the transport of the carriers (Nardes et al. 2007). AFM gives detailed information about the grain size, boundary thickness, and the surface roughness of the i lms. In Figure 29.57, AFM topography and the phase images of an PEDOT:PSS i lm, which was glycol treated in order to increase its conductivity are presented. 29.2.4.2 Implementation of AFM for Protein Adsorption and Conformation Imaging is becoming an ever more important tool in the diagnosis of human diseases. Imaging at cellular, and even subcellular and molecular level, is still largely a domain of basic research. However, it is anticipated that these techniques will ind their way into routine clinical use. AFM and AFM-related techniques (e.g., scanning near-ield optical microscopy [SNOM]) have become sophisticated tools, not only to image surfaces of molecules or subcellular compartments, but also to measure molecular forces between molecules. h is is substantially increasing our knowledge of molecular interactions. AFM has been used for the visualization of the single protein molecules as well as for the comprehension of protein adsorption mechanisms on several biocompatible surfaces. It can provide detailed information about the conformation and size of biomolecules with nanoscale precision, protein layer surface morphology, and roughness, and it can reveal protein adsorption mechanisms and cell activation, which cause morphology changes. In the following discussion, an overview of the AFM analysis related with the hemocompatibility (possibility of thrombus formation) of a surface is presented. In this context, Fib and HSA morphological

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characteristics and adsorption mechanisms and platelet adhesion/activation mechanisms are investigated and presented.

Protein conformation changes are extremely important for the in-depth comprehension of the protein adsorption mechanisms. hese are observed through AFM technique. Causing protein denaturation, for example through heating or through pH change of the protein solution used, is a way to explore protein conformation changes in detail. AFM technique provided information about the surface roughness of the thin ilms and the protein layers formed on them, as well as the change of the topography characteristics of the Fib layers with the increase in temperature. For this purpose, a special

29.2.4.2.1 Study of the Size and Conformation of Biomolecules with Nanoscale Precision It is known that Fib is a linear blood plasma protein with size 48 × 6 × 9 nm with three globular domains, with a signiicant role in blood coagulation and thrombus formation. In Figure 29.58, a 350 × 350 nm2 2D image of adsorbed Fib on amorphous hydrogenated carbon (a-C:H) thin i lm is presented.

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FIGURE 29.59 AFM topography image of Fib adsorbed on a-C:H thin i lm, (a) at room temperature (RT), (b) at 73°C, (c) at 116°C, and (d) detail in the red square of (a).

heating stage was integrated to the AFM and the samples (incubated for 70 min) were heated up, while their surface was being scanned by the AFM probe. Topography images (1 × 1 μm) of Fib on a-C:H thin ilm at room temperature (RT) (no denaturation), 73°C (mild denaturation), and 116°C (advanced stage of denaturation) are presented in Figure 29.59a through c, respectively. In the AFM topography image of Figure 29.59d (detail from Figure 29.59a), it is obvious that the Fib molecule preserves its trinodular shape with the three globular domains, either in a linear or in a folded conformation, on the a-C:H thin ilm. his is the reason why this sample was selected to be heated on the AFM heating stage. Peak-to-peak and root-mean-square roughness (Rrms) at the three temperatures are also presented in the graph of Figure 29.60. Peak-to-peak and Rrms are decreasing with increasing temperature, due to protein unfolding and dehydration. By the calculation of the diameter of randomly selected globular aggregates, it is observed that it varies from 10 to 25 nm, independent

of temperature. However, the distance between them decreases when temperature increases (data not shown) and the typical protein conformation is not easily distinct. his is caused by a possible change of the molecule from a linear to a folded conformation due to the temperature efect (Lousinian et al. 2007a,b). 29.2.4.2.2 Study of Protein Adsorption Mechanisms he mechanisms of protein adsorption can be revealed through the implementation of AFM. For example, in the case of human serum albumin, a heart-shaped blood plasma globular protein with dimensions 8 × 8 × 3 nm, which plays an important role in inhibiting the thrombus formation, it seems that in general, aggregates are formed which inally coalesce. More precisely, it was observed that initially, the protein molecules form clusters (5 min), the size of which increases with time (10 min) and the surface of the thin ilm is partially covered as it can be concluded by the topography images of AFM, shown in Figure 29.61. he surface of a-C:H

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FIGURE 29.61 1 × 1 μm topography image of (a) a-C:H thin i lm as deposited, (b) HSA on a-C:H ater 5 min incubation time, and (c) HSA on a-C:H ater 10 min incubation time.

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29.2.4.3 Investigation of Platelets Morphology and Activation by AFM 29.2.4.3.1 Observation of Single Platelet Activation Platelets play an important role in blood-material interactions as their activation leads to thrombus formation and onto their surfaces take place essential steps of coagulation cascade. Platelets undergo a change in their shape, which exposes a phospholipid surface for those coagulation factors that require a surface and also release agonist compounds of dense and a-granules to attract and activate additional platelets and leucocytes promoting the growth of thrombus. During their activation, there is an increased membrane expression of receptors such as glycoprotein GPIIbIIIa, which is the receptor for Fib and von Willebrand factor, leading to the linkage of adjacent platelets via Fib. In a irst approximation, the morphological characteristics of platelets during their adhesion on the examined ilms and activation were observed by AFM. More precisely, platelets from their resting form, which is characterized by a discoid shape without pseudopodia, when they come in contact with a surface and activate, present fully spread hyaloplasm with extended, lattening pseudopodia (Figure 29.62a and b). More precisely, in Figure 29.62a, one single platelet is observed, the developing pseudopodia (Karagkiozaki et al. 2009a,b). his is observed in an early stage of activation. On the contrary, in Figure 29.62b, ater 2 h of incubation, six pseudopodia are observed around the platelet, with three more pseudopodia growing. he dimensions of the topography image of Figure 29.62b are 15 × 15 μm, so that the full length of the pseudopodia is presented. One stage of platelets activation

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includes the formation of pseudonucleus (egg-like type), made by their granules gathered at the center of the cell. hese structural changes indicant of the increased platelet activation, are necessary for their spread onto surfaces and aggregation via mainly of Fib. Additionally, platelets release chemical compounds of their granules to facilitate other platelets and leucocytes, resulting in a clot formation (Karagkiozaki et al. 2008). 29.2.4.3.2 Evaluation of hrombus Formation Potential on a Surface In the following igures, platelet aggregation and activation on a-C:H ilms, which have been found to be nonhemocompatible (Karagkiozaki et al. 2008), is presented. In Figure 29.63a, it can be easily noticed that ater 1 h of incubation, platelets appear with a “pseudonucleus” in their center, being a index of activation, and ater 2 h they aggregate, forming a cluster look like an “island” with a height of approximately 700 nm (Figure 29.63b). Performing X-section at 19,000 nm in Figure 29.28b, it can be deduced that the platelets indicated by the green arrows, have the height of 100–150 nm and length of 2000–2500 nm and at some areas they aggregate (blue arrows) and between them, clusters of platelet-rich plasma proteins having the size of 50–100 nm and height of 20–50 nm, prevail, as shown by purple arrows (Figure 29.63c). he conclusion that the areas indicated by the purple arrows in Figure 29.63c correspond to plasma protein clusters is supported by their size (diameter/length and height), which is quite smaller from the one of the platelets. On the other hand, the green arrows indicate some platelets on the surface of the a-C:H, with much larger diameter and height. he diferences of platelet activation and aggregation on hemocompatible and nonhemocompatible surfaces are pronounced in Figures 29.64 and 29.65. 3D AFM topography images of platelets on a-C:H ilms ater 1 h (Figures 29.64a and 29.65a) and 2 h (Figures 29.64b and 29.65b) of incubation are presented. In Figure 29.64a, the circles indicate activated platelets having the “egg-like” type structure, which remains the same ater 2 h of incubation (Figure 29.64b), coni rming the good hemocompatibility properties of the ilm. On the contrary, in Figure 29.65, “egg-like” type platelets (Figure 29.65a) are aggregated and transformed to clusters ater 2 h incubation time (Figure 29.65b) (Karagkiozaki et al. 2009).

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ilm without proteins appears to have grain-like surface features, the size of which is around 20–30 nm (Figure 29.61a). In Figure 29.61b (protein incubation time 5 min), it is clearly seen that protein aggregates exist. Typical height is around 8 nm (once or twice the height of one HSA molecule). he protein molecules tend to spread laterally, rather than forming “hills.” Figure 29.61c shows that in 10 min of incubation time, there are larger protein clusters and the surface is partially covered. Finally the protein islands coalesce, and the surface of the thin ilms is totally covered by the proteins (Logothetidis 2007, Mitsakakis et al. 2007).

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FIGURE 29.62 AFM topography image of (a) a single platelet at an early stage of activation when it starts to develop pseudopodia and (b) a highly activated platelet with pseudopodia and increased size on a-C:H i lm ater 2 h of incubation.

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FIGURE 29.63 AFM topography image of (a) platelets on a-C:H ater 1 h incubation time (3D image with scan size 10 × 10 μm). he circles show the activated “egglike” type platelets. (b) Platelets on a-C:H ater 2 h incubation time (scan size 21 × 21 μm). he arrows indicate the platelets aggregation and the formation of clusters. (c) Diagram of X-section at 19,000 nm in Figure 29.52b. he irst two let arrows show the platelets (height of 100–150 nm and length of 2000–2500 nm), the fourth arrow from the let indicate platelets clusters whereas clusters of PRP proteins with size of 50–100 nm, are shown by the third and i t h arrow from the let.

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FIGURE 29.64 3D AFM topography image of (a) platelets on a-C:H (grown without the application of bias voltage on the substrate during their development) after 1 h incubation time (scan size 10 × 10 μm). The circle indicates an activated platelet having the “egg-like” type structure (b) Platelets on a-C: H ater 2 h incubation time (10 × 10 μm). he circles denote the “egg-like type” activated platelets.

hese AFM observations are in line with the estimation of surface roughness via the measurements mean values of peak-topeak and root mean square roughness (Rrms) parameters. In Table 29.4, the mean values of peak-to-peak distance and Rrms roughness parameters with their standard deviations, for 10 randomly

scanned AFM areas are presented, for platelets’ incubation times 0 min (bare substrate), 1 h, and 2 h. hus, AFM can be used for high-resolution real-time studies of dynamic changes in cells, in order for revolutionizing our understanding of biological specimen–surface interactions (Karagkiozaki et al. 2008).

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FIGURE 29.65 3D AFM topography image of (a) platelets on a-C:H (grown with the application of bias voltage on the substrate during their development), ater 1 h incubation (scan size 10 × 10 μm). (b) Platelets on the a-C:H ater 2 h incubation time (scan size 20 × 20 μm). he arrows indicate the platelets aggregation and the formation of a cluster like an island. TABLE 29.4 Film Types, Incubation Times of Platelets (PLTs), and Morphology Parameters of Surfaces, Including the Mean Values of Peak-to-Peak Distance and RMS Roughness and heir Standard Deviation Values, as Measured for Ten Randomly Scanned AFM Areas Film Type a-C:H PLTs /a-C:H PLTs /a-C:H

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29.2.4.4 Scanning Near Field Optical Microscopy Scanning near-ield optical microscopy (SNOM) is a relatively new SPM technique with great potential giving optical images of surfaces with subdif raction resolution. he main idea behind SNOM is to break the Abbe dif raction limit, which governs the resolution in conventional optical microscopy. According to the Rayleigh criteria, two point light sources, which are in distance lmin, can be resolved if the distance between the centers of the Airy disks, formed due to dif raction, equals the radius of one of the two Airy disks: lmin = 0.61

λ , n ⋅ sin α

FIGURE 29.66 A SNOM apparatus mounted on an inverted optical microscope. he system is placed on an electronic antivibration table to avoid mechanical vibrations. he laser emits green light (λ = 532 nm). (Courtesy of Lab for hin Films Nanosystems and Nanometrology, Physics Department, Aristotle University of hessaloniki, hessaloniki, Greece.)

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(29.47)

where n is the refraction index of the medium, where the light source lies, and 2α is the aperture. Usually, nċsin α < 1.5 and lmin ~ 0.4λ. hus, in the conventional optical microscopy we cannot distinguish two objects if the distance between them is lower than 0.4λ. In SNOM, this limit can be overcome by taking the advantage of the near-surface position an SPM probe (usually a shear force tuning fork) and gluing on it a iber, through which the light source (laser beam) illuminates the sample surface from ~10 nm distance.

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FIGURE 29.67 he SNOM probe. 1. he quartz resonator tuning fork. 2. he single-mode optical iber and 3. he base with the metallic contacts. (From NT-MDT Co., Instructions Manual, NTEGRA Solaris Probe NanoLaboratory.)

A SNOM apparatus is shown in Figure 29.66. he SNOM probe (Figure 29.67) is a single-mode iber glued on the one “leg” of the U-shape quartz resonator. he iber is glued in such

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Handbook of Nanophysics: Principles and Methods

a way that its end exceeds 0.5–1 mm for the U-shaped quartz. Also, the radius of the optical iber end is very crucial for resolution purposes and it is sharpened by chemical etching and coated with a metal, in order to achieve a very sharp tip (roundness 50–100 nm). he spatial resolution of SNOM is dei ned by this tip-surface distance and the aperture diameter of the tip, which is less than 100 nm. During the SNOM operation, a piezodriver is used to excite oscillations of the system tuning fork-optical iber parallel to the sample’s surface. Similar to the AFM semicontact mode, when the tip approaches the sample surface, a reduction of the oscillations amplitude is induced. A feedback system then is utilized to keep this amplitude constant during scanning. In this way, topographic shear force images can be obtained.

SNOM transmission images can be obtained from transparent samples, while SNOM relection images can be obtained from opaque ones. Transmitted or relected light from near-ield is collected through an objective lens and inally is recorded from a photomultiplier. Fluorescence from the sample can be obtained at both transmission or relection mode by using a notch i lter to cut the excitation light and drive the luorescence light to a spectrometer or a photomultiplier. SNOM is mostly used to study polymeric and biological systems. Among its various possibilities, the study of luorescence from single molecules is of great importance. Information about the topography and transmission of cells can be obtained by the use of SNOM technique. An example is presented in Figure 29.68, in a 45 × 45 μm 2 image of platelet-rich

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plasma (PRP). Figure 29.55a presents the topography of the PRP on a-C:H thin i lm deposited on glass. he platelets of this sample have a very large concentration and form large aggregates of large height values (about 3 μm), although areas of smaller height are also observed (Figure 29.68a). On the other hand, in Figure 29.68b, the image of the same area provides information about light transmission through the platelets. More precisely, the areas with a lighter color (larger transmission) seem to correspond to the topography areas where the height of the platelet aggregates is smaller. h is kind of results is the i rst step showing the potential implementation of SNOM in the medical ield. In Figure 29.56a and b, the effect of surface irregularities to the transmission of the laser light is presented. The sample is a ZnO nanocoating deposited by dc magnetron sputtering on a flexible PET substrate coated with a hybrid polymer (organic–inorganic film, described in Section 29.2.1.4) ~2 μm thick laminate. The ZnO nanocoating is a candidate material to replace the brittle indium tin oxide as an electrode in flexible optoelectronic devices. Thus any surface features or irregularities can the affect the device functionality. In the topographic image shown in Figure 29.69a, a large crack on the surface of ZnO can be observed. The same crack is also clearly observed in the transmission image (Figure 29.69b). An example of SNOM florescence in present in Figures 29.70 and 29.71. A green laser (λ = 532 nm) was used to illuminate latex spheres stained with rhodamine. In Figure 29.70a and b, the SNOM topography and the transmission image from the same surface area are presented. In the transmission image, the whiter regions are possible places of fluorescence emission from the rhodamine, a fact that was verified by the received fluorescence spectra (Figure 29.71). The fluorescence spectra was taken for the position marked with (X) in the transmission image and the characteristic peak of rhodamine fluorescence is presented.

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29.3 Summary Nanotechnology is an emerging technology with applications in several scientiic and research ields, such as information and communication technology, biology, medical technology, etc. Novel nano- and biomaterials, and nanodevices are fabricated and controlled by nanotechnology tools and techniques, which investigate and tune the properties, responses, and functions of living and nonliving matter, at sizes below 100 nm. In order to investigate in depth the complex nanosystems, highly sophisticated nanoscale precision metrology tools are required. he advances in nanomaterials necessitate parallel progress of the nanometrology tools and techniques. Examples of important nanometrology tools as they have been discussed in this chapter include in-situ monitoring techniques that allow the

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monitoring and evaluation of building block assembly and growth; ellipsometry, an optical nondestructive technique, with the capability of measuring in air and liquid environment (e.g., protein solution), highly focused x-ray sources and related techniques that provide detailed molecular structural information by directly probing the atomic arrangement of atoms; nanoindentation allow the quantitative determination of mechanical properties of thin i lms and small volumes of material; scanning probe microscopy (scanning tunneling microscopy, AFM, etc.) that allow three-dimensional topographical atomic and molecular views or optical responses (SNOM) of nanoscale structures. he above-described nanometrology methods contribute toward the understanding of several aspects of the state-of-the-art nanomaterials in terms of their optical, structural, and nanomechanical properties. he nanoscale precision and the detailed investigation that these nanometrology techniques ofer give them an enormous potential for even more advanced applications for the improvement of the quality of research and of everyday life.

29.4 Future Perspective he advances in fundamental nanosciences, the design of new nanomaterials, and ultimately the manufacturing of new nanoscale products and devices all depend to some degree on the ability to accurately and reproducibly measure their properties and performance at the nanoscale. herefore, nanometrology tools and techniques are both integral to the emerging nanotechnology enterprise and are two of the main areas critical to the success of nanotechnology. Decades of nanoscience research have led to remarkable progress in nanotechnology as well as an evolution of instrumentation and metrology suitable for some nanoscale measurements. Consequently, today’s suite of metrology tools has been designed to meet the needs of exploratory nanoscale research. New techniques, tools, instruments, and infrastructure will be needed to support a successful nanomanufacturing industry. he currently available metrology tools are also beginning to reach the limits of resolution and accuracy and are not expected to meet future requirements for nanotechnology or nanomanufacturing. Novel methods and combinations, such as the TERS technique that has been described in the Introduction (Section 29.1), achieve much higher resolution values since provides a signiicant increase of the Raman signal and of the lateral resolution by up to nine orders of magnitude. h is combination overcomes the diiculties that originate from low signal since the Raman systems have limit in lateral resolution of 300 μm and require high laser power for surface investigation because the measured Raman intensity is six orders of magnitude lower than the excitation power. hus, TERS is a promising technique and in the near future, it could be used for probing the chemical analysis of very small areas and for the imaging of nanostructures and biomolecules such as proteins. However, clever new approaches need to be developed. For this, the fundamental mechanisms by which the probes of the

Handbook of Nanophysics: Principles and Methods

nanometrology measuring systems interact with the materials and objects that are being measured need to be understood. Also, it is important to develop standard samples and to construct standardized procedures for measurements at the nanometer scale, which enable the transfer of the properties and response of the unit from the nanometer to macroscopic scale without any appreciable loss of accuracy for certifying, calibrating, and checking nanometrology instruments. Finally, even with the vast array of current tools available, the important question is whether or not they are providing the required information or reams of inconsequential data. Revolutionary approaches to the nanometrology needed may be required in the near future and therefore, revolutionary and not just evolutionary instrumentation and metrology are needed.

Acknowledgments he author would like to thank the stuf of the Lab for hin Films, Nanosystems and Nanometrology (LTFN) (http://ltfn. physics.auth.gr) for their support and contribution.

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Daillant J. and Gibaud A. 2009. X-Ray and Neutron Relectivity. pp. 85–131. Springer, Berlin/Heidelberg, Germany. Daldosso N., Luppi M., Ossicini S. et al. 2003. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2. Phys. Rev. B 68: 085327-1–085327-8. Fix W., Ullmann A., Ficker J. et al. 2002. Fast polymer integrated circuits. Appl. Phys. Lett. 81: 1735–1737. Forrest S.R. 2004. he path to ubiquitous and low cost organic electronic appliances on plastic. Nature 428: 911. Gioti M., Logothetidis S., Patsalas P. et al. 2000. Magnetron sputtered carbon nitride: Composition and chemical bonding of as-grown and post-annealed ilms studied with real-time & insitu diagnostic techniques. Surf. Coat. Technol. 125: 289–294. Gioti M., Laskarakis A., and Logothetidis S. 2004. IR–FUV ellipsometry studies on the optical, electronic and vibrational properties of polymeric membranes. hin Solid Films 283: 455–456. Gioti M., Logothetidis S., Schroeder J. et al. 2009. Real-time evaluation of thickness, optical properties and stoichiometry of SiOx gas barrier coatings on polymers. hin Solid Films, 517: 6230–6233. Gould S.A.C., Schiraldi D.A., and Occelli M.L. 1997. Analysis of poly(ethylene terephthalate) (PET) ilms by atomic force microscopy. J. Appl. Polym. Sci. 65: 1237–1243. Gravalidis C. and Logothetidis S. 2006. X-ray difuse scattering investigation of polytetraluorethylene surfaces. Polimery/ Polymers 51: 359–364. Gravalidis C., Gioti M., Laskarakis A. et al. 2004. Real time monitoring of silicon oxide deposition processes. Surf. Coat. Technol. 180–181: 655–658. Gravalidis C., Logothetidis S., Hatziaras N. et al. 2006. Characterization of Si nanocrystals into SiO2 matrix. Appl. Surf. Sci. 253: 385–388. Hamers R.J. 2001. Flexible electronic futures. Nature 412: 489–490. Herzinger C.M., Johs B., McGahan W.A. et al. 1998. Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation. J. Appl. Phys. 83: 3323–3336. http://www.dupont.com/releasesystems/en/products/dryfilm_ dispersion.html http://www.ntmdt.com Hultman L., Shinn M., Mirkarimi P.B. et al. 1994. Characterization of misit dislocations in epitaxial (001)-oriented TiN, NbN, VN, and (Ti,Nb) N ilm heterostructures by transmission electron microscopy. J. Cryst. Growth 135: 309–317. Ioannou-Sougleridis V., Nassiopoulou A.G., and Travlos A. 2003. Efect of high temperature annealing on the charge trapping characteristics of silicon nanocrystals embedded within SiO2. Nanotechnology 14: 1174–1179. Jellison G.E. and Modine F.A. 1996. Parameterization of the optical functions of amorphous materials in the interband region. Appl. Phys. Lett. 69: 371–373. Kalfagiannis N., Zyganitidis I., Kassavetis S. et al. 2009. Microstructural characteristics, nanomechanical properties of Ti/TiB2 multilayered metal ceramic composites. To be submitted.

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Karagkiozaki V., Logothetidis S., Laskarakis A. et al. 2008. AFM study of the thrombogenicity of carbon-based coatings for cardiovascular applications. Mater. Sci. Eng.: B 152: 16–21. Karagkiozaki V., Logothetidis S., Kalfagiannis N. et al. 2009. Atomic force microscopy probing platelet activation behavior on titanium nitride nanocoatings for biomedical applications. Nanomed. Nanotechnol. Biol. Med. 5: 64–72. Kassavetis S., Mitsakakis K., and Logothetidis S. 2007. Nanoscale patterning and deformation of sot matter by scanning probe microscopy. Mater. Sci. Eng. C 27: 1456–60. Keldysh L.V., Kirzhnits D.A., and Maradudin A.A. 1989. he Dielectric Function of Condensed Systems, North-Holland Publishing, Amsterdam, the Netherlands. Kitano Y., Kinoshita Y., and Ashida T. 1995. Morphology and crystal-structure of an a axis oriented, highly crystalline poly(ethylene-terephthalate). Polymer 36: 1947–1955. Koidis C., Logothetidis S., and Georgiou D. 2008. Growth, optical and nanostructural properties of magnetron sputtered ZnO thin ilms deposited on polymeric substrates. Phys. Status Solidi A 205: 1988–1992. Koidis C., Logothetidis S., Laskarakis A. et al. 2009. hin ilm and interface properties during ZnO deposition onto high-barrier hybrid/PET lexible substrates. Micron 40: 130–134. Krug T.G. 1990. Transparent barriers for food-packaging. In Proceeding of the 41st Society of Vacuum Coaters Annual Conference, Boston, MA. Laskarakis A. and Logothetidis S. 2006. On the optical anisotropy of poly(ethylene terephthalate) and poly(ethylene naphthalate) polymeric ilms by spectroscopic ellipsometry from visible-far ultraviolet to infrared spectral regions. J. Appl. Phys. 99: 066101-1–066101-3. Laskarakis A. and Logothetidis S. 2007. Study of the electronic and vibrational properties of poly(ethylene terephthalate) and poly(ethylene naphthalate) ilms. J. Appl. Phys. 101: 053503-1–053503-9. Laskarakis A., Logothetidis S., and Gioti M. 2001. Study of the bonding structure of carbon nitride ilms by IR spectroscopic ellipsometry. Phys. Rev. B. 64: 125419-1–125419-15. Laskarakis A., Gioti M., and Pavlopoulou E. 2004. A complementary spectroscopic ellipsometry study of PET membranes from IR to Vis-FUV. Macromol. Symp. 205: 95–104. Laskarakis A., Georgiou D., and Logothetidis S. 2010. Real-time optical modelling and investigation of inorganic nano-layer growth onto lexible polymeric substrates. Mater. Sci. Eng. B, 166: 7–13. Laskarakis A., Georgiou D., Logothetidis S. et al. 2009. Study of the optical response of hybrid polymers with embedded inorganic nanoparticles for encapsulation of lexible organic electronics. Mater. Chem. Phys. 115: 269–274. Logothetidis S. 2001. hin Films Handbook: Processing, Characterization and Properties. Academic Press, New York. Logothetidis S. 2005. Polymeric substrates and encapsulation for lexible electronics: Bonding structure, surface modiication and functional nanolayer growth. Rev. Adv. Mater. Sci. 10: 387–397.

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Logothetidis S. 2007. Haemocompatibility of carbon based thin ilms. Diam. Relat. Mater. 16:1847–1857. Logothetidis S. and Laskarakis A. 2008. Organic against inorganic electrodes grown onto polymer substrates for lexible organic electronics applications. hin Solid Films 518: 1245–1249. Logothetidis S., Kassavetis S., Charitidis C. et al. 2004. Nanoindentation studies of multilayer amorphous carbon ilms. Carbon 42: 1133–1136. Logothetidis S., Gioti M., Lousinian S. et al. 2005. Haemocompatibility studies on carbon-based thin ilms by ellipsometry. hin Solid Films 482: 126–132. Lousinian S. and Logothetidis S. 2008. In-situ and real-time protein adsorption study by spectroscopic ellipsometry. hin Solid Films 516: 8002–8008. Lousinian S., Logothetidis S., Laskarakis A. et al. 2007a. Haemocompatibility of amorphous hydrogenated carbon thin ilms, optical properties and adsorption mechanisms of blood plasma proteins. Biomol. Eng. 24: 107–12. Lousinian S., Kassavetis S., and Logothetidis S. 2007b. Surface and temperature efect on ibrinogen adsorption to amorphous hydrogenated carbon thin ilms. Diam. Relat. Mater. 16: 1868–1874. Lousinian S., Kalfagiannis N., and Logothetidis S. 2008. Albumin and ibrinogen adsorption on boron nitride and carbonbased thin ilms. Mater. Sci. Eng.: B 152: 12–15. Lucas B.N., Oliver W.C., and Swindeman J.E. 1998. Dynamics of frequency-speciic, depth-sensing indentation testing. Mater. Res. Soc. Symp.—Proc. 522: 3–14. Martínez-Antón J.C. 2002. Measurement of spectral refractive indices and thickness for biaxial weakly absorbing ilms. Opt. Mater. 19: 335–341. Mathioudakis C., Kelires P.C., Panagiotatos Y. et al. 2002. Nanomechanical properties of multilayered amorphous carbon structures. Phys. Rev. B 65: 205203-1–205203-14. Miller C.E. and Eichinger B.E. 1990. Analysis of rigid polyurethane foams by near-infrared difuse relectance spectroscopy. Appl. Spectrosc. 44: 496–504. Mitsakakis K., Lousinian S., and Logothetidis S. 2007. Early stages of human plasma proteins adsorption probed by atomic force microscope. Biomol. Eng. 24: 119–124. Motohashi M., Hayazawa N., Tarun A. et al. 2008. Depolarization efect in relection-mode tip-enhanced Raman scattering for Raman active crystals. J. Appl. Phys. 103: 034309-1–034309-9. Nardes A.M., Kemerink M., and Janssen R.A.J. 2007. Anisotropic hopping conduction in spin-coated PEDOT: PSS thin ilms. Phys. Rev. B 76: 085208 1–0852081 7. Nevot L. and Croce P. 1980. Characterization of surfaces by grazing x-ray relection—Application to study of polishing of some silicate-glasses. Rev. Phys. Appl. 15: 761–779. Niklasson G.A. and Granqvist C.G. 1984. Optical properties and solar selectivity of coevaporated Co-Al2O3 composite ilms. J. Appl. Phys. 55: 3382–3410. Nomura K., Ohta H., Takagi A. et al. 2004. Room-temperature fabrication of transparent lexible thin-ilm transistors using amorphous oxide semiconductors. Nature 432: 488–492.

Handbook of Nanophysics: Principles and Methods

Oliver W.C. and Pharr G.M. 1992. Improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7: 1564–1580. Oliver W.C. and Pharr G.M. 2004. Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and reinements to methodology. J. Mater. Res. 19: 3–20. Ouchi I. 1983. Anisotropic absorption and relection spectra of poly(ethylene terephthalate) ilms in ultraviolet region. Polym. J. (Tokyo, Jpn.) 15: 225–243. Ouchi I., Nakai I., and Kamada M. 2003. Anisotropic absorption spectra of polyester ilms in the ultraviolet and vacuum ultraviolet regions. Nucl. Instrum. Methods Phys. Res. B 199: 270–274. Pai P.G., Chao S.S., and Takagi Y. 1986. Infrared spectroscopic study of SiOx ilms produced by plasma enhanced chemical vapor-deposition. J. Vac. Sci. Technol. A 4: 689–694. Palik E.D. 1991. Handbook of Optical Constants of Solids II. Academic Press, Boston, MA. Parratt L.G. 1954 Surface studies of solids by total relection of x-rays. Phys. Rev. 95: 359–369. Patsalas P. and Logothetidis S. 2001. Optical, electronic, and transport properties of nanocrystalline titanium nitride thin ilms. J. Appl. Phys. 90: 4725–4734. Patsalas P. and Logothetidis S. 2003. Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures. J. Appl. Phys. 93: 989–998. Patsalas P., Logothetidis S., and Kelires P.C. 2005. Surface and interface morphology and structure of amorphous carbon thin and multilayer ilms. Diam. Relat. Mater. 14: 1241–54. Rabe U., Janser K., and Arnold W. 1996. Vibrations of free and surface-coupled atomic force microscope cantilevers: heory and experiment. Rev. Sci. Instrum. 67: 3281–93. Sinha S.K., Sirota E.B., and Garof S. 1988. X-ray and neutron scattering from rough surfaces. Phys. Rev. B 38: 2297–2311. Snaith H.J., Kenrick H., and Chiesa M. 2005. Morphological and electronic consequences of modiications to the polymer anode ‘PEDOT:PSS’. Polymer 46: 2573–2578. Sneddon I.N. 1965. he relation between load and penetration in the axisymmetric boussinesq problem for a punch of arbitrary proile. Int. J. Eng. Sci. 3: 450–467. Steidtner J. and Pettinger B. 2008. Tip-enhanced Raman spectroscopy and microscopy on single dye molecules with 15 nm resolution. Physl. Rev. Lett. 100: 236101-1–236101-4. Tabor D. 2000. he Hardness of Metals. Oxford University Press, London, U.K. Tauc J., Grigorovici R., and Vaucu A. 1966. Optical properties and electronic structure of amorphous germanium. Phys. Status Solidi B 15: 627–637. hompson C., Palasantzas G., and Feng Y.P. 1994. X-rayrelectivity study of the growth kinetics of vapor-deposited silver ilms. Phys. Rev. B 49: 4902–4907. Tompkins H.G. and Irene E.A. 2005. Handbook of Ellipsometry. William Andrew Publishing, New York.

Nanometrology

Tonelli A.E. 2002. PET versus PEN: What diference can a ring make? Polymer 43: 637–642. Wangand Y. and Lehmann S. 1999. Interpretation of the structure of poly(ethylene terephthalate) by dynamic FT-IR spectra. Appl. Spectrosc. 53: 914–918. Whitehouse D.J. 2002. he Handbook of Surface and Nanometrology. Taylor & Francis Publishing, London, U.K. Wormeester H., Kooij E.S., and Mege A. 2004. Ellipsometric characterisation of heterogeneous 2D layers. hin Solid Films 455–456: 323–334. Yanaka M., Henry B.M., Roberts A.P. et al. 2001. How cracks in SiOx-coated polyester ilms afect gas permeation. hin Solid Films 397: 176–185. Yashar P.C. and Sproul W.D. 1999. Nanometer scale multilayered hard coatings. Vacuum 55: 179–90. Yeo, B.-S., Schmid, T., Zhang, W. et al. 2007. Towards rapid nanoscale chemical analysis using tip-enhanced Raman spectroscopy with Ag-coated dielectric tips. Analyt. Bioanalyt. Chem. 387: 2655–2662.

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30 Aerosol Methods for Nanoparticle Synthesis and Characterization 30.1 Introduction ...........................................................................................................................30-1 30.2 Online Characterization and Classiication of Aerosol Nanoparticles.........................30-1 30.3 Nanoparticle Generation ..................................................................................................... 30-4 Particle Synthesis by Electrohydrodynamic Atomization • Particle Synthesis from the Vapor Phase

Andreas Schmidt-Ott Delft University of Technology

30.4 Conclusions...........................................................................................................................30-15 References.........................................................................................................................................30-16

30.1 Introduction Nanoparticles are essential building blocks in the fabrication of nanostructured materials. Much of the progress in creating novel nanoassemblies or nanocomposites depends on the progress in producing inorganic nanoparticles, including atomic clusters, nanotubes, and nanowires. Particle production processes are needed that are lexible with respect to size, structure, and composition to enable tailoring of the product properties in view of the application. Systems in which the particles retain their special size-determined properties are of special interest. his may, for example, be achieved by coating, so that the distances and therewith the interactions between the particle cores are controlled. Major long-term research goals in this area are to develop ways of designing and producing new nanoscale materials of chosen properties in application domains including electronic, semiconductor, and optical properties as well as selective catalytic behavior, unusual strength and lightweight, resistance to corrosion, and fast kinetics in hydrogen and lithium storage. Particle production from the gas phase, the aerosol route, has inherent advantages such as purity, the absence of liquid wastes, and feasibility of continuous processes as opposed to the colloid route, where usually only batch processes are possible. Versatility and lexibility of aerosol methods with respect to particle material and size and structure represent additional advantages. In addition, various methods of online characterization and classiication of the particulate product are provided by the state of the art aerosol technology. he lack of monodispersity has been seen as a major drawback of gas-phase nanoparticle production, but this diiculty can be overcome, as shown below. For these reasons, vapor phase nanoparticle production is becoming the dominant nanoparticle production route, although liquid-phase methods had a head start of 100 years.

Gas-phase synthesis of nanoparticles for applications has been reviewed by Kruis et al. [1], Swihart [2], and Biskos et al. [3]. Hahn [4] presented a useful overview of gas-phase synthesis of nanocrystalline materials. h is chapter is partly inspired by these reviews and focuses on “round” inorganic particles smaller than 100 nm in diameter and down to the atomic cluster size range. he term “atomic cluster” is used for the subnanometer range here. he production of fullerenes, carbon nanotubes, and related materials has been treated by many authors and is outside the scope of this chapter. However, well-deined particles are the key to nanotube and nanoiber production [5].

30.2 Online Characterization and Classiication of Aerosol Nanoparticles Online characterization of nanoparticles in gas suspension with respect to speciic properties is important in connection with gas-phase production in order to control particle formation to give the desired product. Characterization is usually based on efects that also classify or separate particles with respect to certain properties, so that classiication and characterization can be treated simultaneously. Separation methods are used to obtain particles that are pure with respect to a certain property. his chapter does not treat techniques that are customarily used for experimental atomic cluster research like time-of-l ight mass spectrometry and drit cell mobility analyzers. Techniques that require particle sampling for inspection, for example, by microscopy, are also be let aside. he present section is restricted to size, charge, and concentration analysis in aerosols, but this is the key to assessing any property that induces a change in one of these quantities in a suitable experiment [6,7]. For example, 30-1

30-2

Handbook of Nanophysics: Principles and Methods

charge measurement combined with aerosol photoelectron emission leads to information on the electronic structure [8]. Photoemission from particles in gas suspension can also be used to measure the adsorption of gases to particles suspended in inert gas [9], because it reveals the work function, which is the energy required to emit an electron from a solid. he work function sensitively depends on molecules adsorbed on the particle surface and can be used to monitor adsorption [9]. Size and concentration change quantify collisional growth of particles and can be used to estimate forces between them [10]. he concentration of aerosol particles before and ater passing a magnetic ilter yields the particle magnetic moment [11]. he reaction rate of particles with any speciic species added to the aerosol or adsorption behavior can be observed via size change. For example, a dual size analyzer comparing size before and ater adding water vapor is being applied to measure hygroscopicity of airborne particles. hese methods have emerged in the ield of aerosol science and technology and have a great potential in characterization and study of nanoparticles and clusters for nanotechnology. he fact that in the aerosol state particles can easily be separated with respect to their size is also a great advantage for nanoparticle production from the gas phase.It is useful irstly to determine the size distribution of the particles produced and secondly to select particles of a certain narrow size range. h is is necessary for basic studies on the particles produced, for example, the size dependence of catalytical properties or for obtaining a product that requires a certain particle size. Most aerosol size classiiers are basically ilters that transmit a certain particle size. Of course, such i lters could also be designed to transmit a speciic size distribution desired for a product. Existing lexible principles for size separation of nanoparticles in gas suspension that cover the whole range down to atomic clusters are inertial impaction and electrical mobility classiication [12]. he former method uses the efect that the acceleration of particles in an accelerated gas stream depends on their mass and mobility. he mobility b is dei ned as b=

vrel , Fd

(30.1)

the ratio of the particle velocity relative to the gas and the resulting drag force on the particle. he quantity in terms of which the particles can be separated is, for example, the stopping distance of a particle in an abruptly stopped gas low S = bmv0 .

with the particle density ρ, assuming spherical particles. he mobility b is related to the particle diameter Dp via b=

(kT /2πμ)1/2 2 p(Dp + d)2 1 + πα /8

(30.4)

mmp m + mp

(30.5)

3

and μ=

[12] with the gas pressure p, the efective gas-particle collision diameter d, Boltzmann’s constant k, temperature T, and the momentum accommodation coeicient α for the gas-particle collisions. Equation 30.4 has been derived by Tammet [13] and experimentally veriied by Fernandez de la Mora et al. [12]. he most important device that determines S is the so-called impactor, the principle of which is illustrated in Figure 30.1. he aerosol is forced through a nozzle, behind which a plate causes an abrupt change in the low direction. he vertical velocity component is reduced to zero, and particles with a stopping distance that exceeds a value in the order of the nozzle-plate distance are impacted onto the plate. hey stick there due to van der Waals forces. he device thus separates particles smaller than a speciic size Dpo, which follow the low, from those that are larger than Dpo, which adhere to the plate. By varying the pressure downstream of the nozzle, Dpo can be varied [12,14]. By recording either the current (number per unit time) of impacted particles or the current of nonimpacted particles as function of the pressure, the size distribution can be determined. If a known fraction of the particles carry an elementary charge, the current of the impacted particles is measurable by connecting an electrometer to the plate, and the current of the nonimpacted particles can be determined by an aerosol electrometer (see below). In principle, a combination of impactor-like devices could also be designed to transfer only a narrow size interval. However, the alternative method of electrical mobility classiication has been developed into more practical devices. he electric ield E exerts the force Fel = qE on the particles. Size and charge q are determined from vrel via Equations 30.1 and 30.4 considering the force balance Fel = Fd .

(30.2)

Impaction nozzle or jet

where m is the particle mass v0 the initial gas low velocity

Streamlines

he mass is related to the particle diameter DP through m=

π 3 Dp ρ 6

Impaction plate

(30.3)

FIGURE 30.1

Impactor (principle).

30-3

Aerosol Methods for Nanoparticle Synthesis and Characterization

Aerosol (in) Clean gas (in)

High electric potential Inner rod (electrode) Outer tube (electrode)

Exit slit Excess air output Mono-disperse output

FIGURE 30.2 Diferential mobility analyzer (principle).

he commonly used designs of electrical mobility classiiers are referred to as diferential mobility analyzers (DMAs) [15,16]. hese instruments usually consist of two concentric cylindrical electrodes that are connected to a voltage source (see Figure 30.2). he polydisperse aerosol enters the DMA in a perimetric low close to the outer electrode surrounding a particle-free sheath low. Because of the electric ield produced by the applied voltage, charged particles of the right polarity obtain a radial drit velocity toward the central rod, which is superimposed onto the laminar low. Particles within a narrow range of mobilities exit the DMA through a circular slit in the centre rod, and this low of gas carrying equally sized particles is available for further studies or processing of these particles while they remain in gas suspension. Alternatively, the particles can be collected on a i lter or applied to coat a surface, by using electrostatic or inertial forces. he highest particle concentration obtained behind a DMA is 106 cm−3 if a hot wire is used as the source of charged particles [17,18] (see Section 30.3.2.3). With the highest aerosol low rate presently achievable with commercial systems of 100 L/min, this is equivalent to a maximum production rate of about 2 × 109 s−1. For size analysis, the monodisperse low is transferred to a detector, where the particle number concentration is measured. Convenient detectors are condensation nucleus counters [19] that saturate the aerosol with a vapor (usually a hydrocarbon) in a continuous low arrangement. In a cooled duct, the vapor becomes supersaturated and condenses on the particles, magnifying them to an optically detectable size in the micron range. Optical counting at a controlled low rate yields the particle concentration in the aerosol. By recording this concentration as a function of the DMA voltage, a mobility distribution is obtained, which can be converted into a size distribution via Equation 30.4, if the charge per particle is known for all the sizes

present. Condensation nucleus counters do not detect particles smaller than a few nanometers (typically 3 nm). h is is because the supersaturation S required for condensation on very small particles is not far from the threshold of homogeneous nucleation, Shom. In a coni nement, the supersaturation can hardly to be made uniform in space, which means that Shom is locally reached if S is near Shom, and additional particles are formed, distorting the particle count. An alternative method to “count” the particles applicable to all sizes consists in measuring the electric current corresponding to the charged particle low in the DMA output. his is done by the means of a so-called aerosol electrometer [20], consisting of a particle i lter in a metal housing, serving as a Faraday cup. he charged particles are trapped in the i lter, and the current lowing from the housing to ground corresponds to the particle current. Divided by the elementary charge, it represents the number of particles per unit time. he currents measurable this way are about 10−15 A. For low rates of a few liters per minute, this corresponds to particle concentrations of 102–103 particles/ cm3, each carrying an elementary charge. Most DMAs used in recent studies are based on the improved version of the Hewitt mobility analyzer proposed by Knutson and Whitby (1975) [15]. his design is unsuitable for particles smaller than 10 nm because a large fraction of particles is lost through difusion to the ducts through which they low. Devices that can be used down to the molecular range have been developed by the group of Fernandez de la Mora [21]. he DMA model shown in Figure 30.2 [22] can be operated with aerosol low rates that limit the time of the particles in the delection zone to about 1 ms. It is important to reduce this time as much as possible, because during delection by the electric ield the particles diffuse, performing Brownian motion. his has the consequence that the mobility classiication becomes unsharp. he shorter the time t in the delection zone, the smaller is the broadening in terms of the difusional mean square displacement according to Einstein’s formula x 2 = 4Dt ,

(30.6)

where D is the dif usion coeicient. he resolution of the device described in [21,22] is suicient to separate atomic clusters differing in one atom for a number of atoms n < 10 [23] and possibly for larger n. he relative standard deviation of a peak in the size spectrum referring to a cluster is around 1% [23]. A practical problem for particles smaller than 5 nm in most DMA concepts is the change in potential generally required between the aerosol inlet and the outlet lines. As both lines oten need to be grounded, the output low must be passed through an insulating tube, where substantial electrophoretic losses occur. his problem has been overcome by the isopotential nano-DMA of Labowsky and Fernández de la Mora [24], where both the inlet and outlet aerosol slits are at ground potential. DMA technology and particle current measurement rely on electric charging of the particles. Various designs of aerosol chargers have been applied during the last decades [25,26].

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Handbook of Nanophysics: Principles and Methods

Most of them use dif usive transport of ions to the particles and are referred to as dif usion chargers. he charging eiciency depends on the image force between the ion and the particle, but this material inluence is so weak that dif usion charging can be regarded as material independent. Ion production is usually done by a corona discharge or by radioactive gas ionization. If the polarities are not separated in the latter case, the aerosol obtains a bipolar charge distribution. Although the charged fraction is then small, this technique is oten used, because an equilibrium charge distribution (Boltzman distribution [27]) is approximately reached [28], which is rather independent of the conditions in the charging device and thus well dei ned. In photoelectric charging [29], the aerosol is exposed to UV radiation of a photon energy above the work function of the particles and below the ionization energy of the gas molecules. his is an eicient way of charging particles positively. he charging eiciency is material dependent, which can be used for material separation [30] but is not desired in all cases. For most charging principles, nanoparticles below 10 nm in diameter seldomly obtain more than a single elementary charge, so that there is a one-to-one relation between size and mobility. For larger particles, special care has to be taken to avoid multiple charging [31]. Uniform charging is not required for size analysis, but the size-dependent charge distribution has to be known to calculate the size distribution.

30.3 Nanoparticle Generation 30.3.1 Particle Synthesis by Electrohydrodynamic Atomization Electrohydrodynamic atomization (EHDA), or electrospraying, can be used for producing equally sized liquid droplets in the nanometer size range using electrical forces. his is of interest for solid nanoparticle production, because a solution can be sprayed, and evaporation of the liquid of each aerosol droplet leads to crystallization of the solute. Besides electrospray-drying, electrospray Driving force

pyrolysis is an established method [32] (e.g., Messing et al. 1993). In the latter case, the spray aerosol is heated, the solvent evaporates, and the residual particles decompose to form the product particles. he electrospray process has been described in many publications, see for example, [33–36]. By applying an electric ield to a droplet at the end of a capillary tube, the droplet is deformed to a cone (Taylor cone [37]). Under the right conditions, in the so-called “cone jet mode,” a jet emanates from the cone tip, which decays into small droplets (see Figure 30.3) [33,34]. hese droplets are equally sized and their diameters reach from tens of nanometers up to several microns. Figure 30.3 also shows a photo of an electrospraying liquid. he liquid is pumped through a nozzle at low rates between 1 L/h and 1 mL/h. A high voltage (HV) applied between the capillary and an electrode establishes an electric ield. he electrode can be ring shaped to allow the spray to escape through it. Electrospray is a versatile way of producing well-deined nanoparticles of various compositions [39–41]. For metals or metal oxide particle production, the precursors can be salts of these metals. For example, if a mixture of metal nitrates is dissolved in the spray liquid, spray pyrolysis in an oxidizing atmosphere produces mixed oxide particles. he droplet aerosol is passed through a tube oven to induce decomposition of the salt, leading to solid metal particles or their oxides. Catalyst particles can be produced by this electrospray pyrolysis method and electrostatically precipitated to a surface [41]. Decomposition may also be induced on that surface instead of in the aerosol state. Salts that only produce gaseous products besides the metal, such as chlorides or nitrates, have been widely used. Spray pyrolysis has been applied for the production of complex mixed oxide particles in the micrometer range [42], for example, for hightemperature superconductors. In analogy, electrospray pyrolysis could be used to produce nanoparticles of a large variety of mixed substances. he droplets produced in electrospray are highly charged. h is has the consequence that agglomeration is avoided. However,

Droplet

Liquid cone

Liquid cone (methanol)

Jet Electrode

Jet High voltage (a)

0.1 mm (b)

FIGURE 30.3 (a) Formation of a liquid cone at the end of a capillary tube and exerted jet and droplets in electrospray. he voltage applied between the nozzle and the liquid is typically around 4 kV for a nozzle-electrode distance of 1 cm. (b) Photo of a methanol cone at the capillary tip in a stable cone-jet mode with a ine jet a few micrometers in diameter. (From Okuyama, K., and Lenggoro, I.W., Chem. Eng. Sci., 58, 537, 2003.)

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Aerosol Methods for Nanoparticle Synthesis and Characterization

the high space charge of the spray leads to dispersion of the spray cloud, which is associated with loss of particles to the container wall in practice. he charge level in an electrospray droplet is close to the so-called Rayleigh limit [43], where Coulomb repulsion leads to fragmentation. Under the inluence of evaporation, that limit is reached, the droplet disintegrates into smaller droplets, and these evaporate and fragment again, and so on. his chain of Coulomb explosions is undesired, if equally sized particles are to be produced. Partial charge compensation by the introduction of ions avoids this problem [44]. Weak radioactive sources or corona discharges are applied for this purpose. The remaining charge can be applied for efective deposition of the particles onto a surface to produce a particulate ilm [45]. Another application of electrospray consists in bringing nanoparticles or large molecules from colloidal solution into gas suspension. Coulomb fragmentation is desired here because if there is more than one particle in the droplet, these are separated. As any liquid contains dissolved contaminants, this mechanism also separates particles from these, at least to a certain degree. From gas suspension, large molecules can easily be transferred into a vacuum system, where they are accessible to mass spectrometry [46]. John Fenn received the Nobel Prize for this analytical technique and its application to biomolecules in 2003. Quantitative understanding of EHDA is diicult, but a lot of progress has been made in this subject. he forces contributing are indicated in Figure 30.4. If the liquid has some conductivity, the ield draws carriers of one polarity to the surface by the normal component of the electric stress. he tangential component pulls the charge carriers towards the electrode. his causes a surface low in that direction. Within a narrow range of the external electric ield, the low converges into a jet (cone jet mode). he cone and jet are shaped by the balance of the electrical, viscous, and surface tension stresses. he jet breaks up due to axisymmetric instabilities, also called varicose instabilities,

Normal electric stress

Surface tension

Gravity

Tangential electric stress

Viscosity Electric polarization stress z

r

Electrode

FIGURE 30.4 Forces involved in electrospray. (From Hartman, R.P.A. et al., J. Aerosol Sci., 30, 823, 1999.)

or due to varicose and lateral instabilities [43,48]. Finally, the highly charged particles form a plume, which rapidly expands due to its space charge. A complete model of EHDA should irstly calculate the shape of the liquid cone and jet, the electric ields inside and outside the cone, and the surface charge density on the cone and jet. Further it should estimate the liquid velocity at the liquid surface [47]. he second part should describe the jet breaking up into droplets due to instabilities and the third part should treat droplet motion in the spray plume emitted. hese three parts are coupled, and a complete physical model of this kind has never been presented due to the complexity. However, helpful scaling relations giving the droplet radius and the current have been derived by several authors. A scaling law for the droplet diameter is given by d=α

Q a1 ε 0 a2 ρa3 , σa4 γ a5

(30.7)

where Q is the liquid volume low rate γ is the liquid bulk conductivity ε0 is the permittivity of free space ρ is the mass density of the liquid σ is the surface tension of the liquid α depends on the liquid permittivity he exponents proposed in diferent studies are indicated in Table 30.1 [49]. We see from Equation 30.7 that the droplet size can be decreased by decreasing the low rate or by increasing the conductivity. he minimum low rate at which the cone-jet mode can operate in the steady state was determined by Barrero and Loscertales [53] as Qmin =

σε0εr . ργ

(30.8)

his relation implies a practical limit of about 10 nm for the smallest droplets to be produced by electrohydrodynamic atomization. Of course, the inal particle size from spray-drying or spray pyrolysis of solutions is smaller than the droplet size and can further be varied downward by decreasing the solution concentration. Industrial application of EHDA produced particles is limited by the low mass production rate. Extremely small low rates are required to generate particles in the size range of a few TABLE 30.1 Exponents in Equation 30.1 Derived by Diferent Authors Authors

a1

a2

a3

a4

a5

Fernandez de la Mora and Loscertales [48,50] Ganan Calvo and Ganan Calvo et al. [51,52] Hartman et al. [43]

1/3

1/3

0

0

1/3

1/2

1/6

1/6

1/6

1/6

1/2

1/6

1/6

1/6

1/6

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Handbook of Nanophysics: Principles and Methods

nanometers. To obtain droplets in the micron size range, low rates are typically less than 1 mL/h. According to Equation 30.7, less than 1 μL/h is then needed for nanosized droplets with the mass production rate that is accordingly small. It is impossible to increase the throughput of material production from a single nozzle, so numbering up the injection ports is the only way to increase the production rate. A number of eforts have been made to scale out EHDA including the use of an array of capillaries and an array of holes in combination with nonwetting material. Other promising approaches use self-organization of Taylor cones forming on a liquid in a serration or groove. MEMS-based manufacturing can be used for this purpose, as summarized by Deng and Gomez [54].

30.3.2 Particle Synthesis from the Vapor Phase 30.3.2.1 General Features he most straightforward way of producing nanoparticles is evaporation from a surface followed by nucleation and growth in an inert gas. h is is a widely used approach for generating particles of well-dei ned chemical composition from the size range of atomic clusters to the micron range. Compared with methods where nanoparticles are formed in a liquid, where surfactants are usually needed, particle synthesis from the gas phase achieves much higher purity. h is is also because noble gases are easily obtained in a very pure state in contrast to water or other solvents. While liquid-phase processes usually have to be performed batch-wise, it is easy to set up continuous processes for particle production from condensing vapors. The production rate is scalable and can be adapted to the application. In contrast to liquid-phase production, which basically requires a new recipe for each nanoparticulate product, gas-phase synthesis is usually very lexible regarding size and material. Furnace reactors and glowing wires use electrical energy to heat the material to be evaporated and so do methods applying an arc or spark discharge. Flame reactors make use of the heat released in an exothermal reaction. In plasma reactors, the gas temperature may be rather low, whereas hot electrons induce decomposition of a precursor, and the product condenses to form particles. In infrared laser pyrolysis, radiation is absorbed by the gas that provides the energy for precursor decomposition. In laser ablation, a laser beam hits a target, heating and evaporating it. All evaporation–condensation methods have in common that the vapor produced becomes supersaturated, and condensation takes place under controlled conditions. he saturation ratio is deined as S=

p , psat

(30.9)

where p is the partial pressure of the component to be condensed psat is the saturation pressure under a given temperature

A vapor can condense on a lat surface if S > 1, but it cannot condense to form small droplets or particles unless S > Shom, the saturation ratio that allows spontaneous formation of particles in the volume of a vapor. his efect is usually referred to as homogeneous nucleation. It is the initial phase of condensation, where atoms or molecules collide and reversibly stick to form metastable clusters. At a given value of S (>1), there is a critical cluster size, above which growth occurs. In a macroscopic thermodynamic model, this is the size of a droplet, the vapor pressure of which balances the surrounding partial pressure. he vapor pressure of a droplet is given by the Kelvin equation [55], and the smaller the diameter, the higher is its vapor pressure. Simple hydrodynamic models like the classical nucleation theory are unsatisfactory, though [56]. he phenomenon of homogeneous nucleation (see, e.g., [57] and references therein), is very complex in reality. Various eforts of modeling using density functional theory and molecular dynamics have led to improved results, but there is no established general approach that reproduces experimental results. In addition, experiments are very diicult because atoms cannot be observed with the necessary resolution in time and space. To overcome this diiculty, atoms have been replaced by easily observable colloid particles in model experiments for noble gas condensation [57]. Much of the theoretical diiculty comes from the fact that the initial stage of nucleation depends very much on the speciic atomic or molecular properties with respect to cluster formation. Homogeneous nucleation requires high saturation ratios, and values exceeding 106 have been used. Supersaturation is reached either by rapid cooling of the vapor or by the decomposition of a precursor into a product that has a much smaller saturation pressure than the precursor at the process temperature. Particle synthesis from the gas phase has mainly been used for generating single-component particles. For multiple-component particles, the diference in condensation behavior of the constituents induces demixing, and layered structures are formed. In the case of spark discharge, quenching and the resulting supersaturation are so extreme that all atoms or molecules more or less stick at the initial few collisions with the critical cluster size being in the range of the atomic size. If this is so for all vapor components, mixed nanoparticles showing the absence of layers or even homogeneous mixtures can be produced [58,59]. he diagrams in Figure 30.5 illustrate growth kinetics of particles from a vapor. Two extreme cases can be distinguished. In Figure 30.5a, the vapor is quickly used up ater the nucleation stage. he particles formed keep colliding with each other and coalesce (i.e., merge into new round particles) to form larger particles. his mechanism has been called cluster–cluster growth or coagulation and is governed by Smoluchowski’s theory (e.g., [27]). Usually it is assumed that every collision sticks. his is certainly justiied for particles of a few nanometers in size or larger, because these particles also stick to surfaces irreversibly [60]. Even if only van der Waals forces are considered, the binding energy at contact is much higher than thermal energy, and the impact energy is readily removed by the surrounding gas. For smaller particles, the assumption of sticking is also justiied

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Aerosol Methods for Nanoparticle Synthesis and Characterization

Vapor Nucleation (monomers)

Coagulation Lognormal size distribution

Vapor used up (a)

Vapor

Vapor atoms (monomers)

Atoms

Continuously

Coagulation Homoand geneous vapor nucleation attachment

Added

Vapor attachment

Narrow size distribution

(b)

FIGURE 30.5 (a) Growth kinetics of particles from vapor: Coagulation is dominant. (b) Growth kinetics of particles from vapor: Vapor attachment is dominant. nv

Vapor attachment

Coagulation and vapor attachment

np

Nucleation

nnucl

Increase of supersaturation

where coalescence occurs, as Figure 30.5 suggests. Coagulation leads to size distributions that can usually be approximated well by a lognormal function (Figure 30.5a). he tail of this distribution on the large particle end is undesired, where uniform size is advantageous. Figure 30.5b demonstrates that uniform size distributions can also be produced, although this has not been achieved oten in practice. Size distributions become narrow, if the growth process is not dominated by particle–particle collisions but by particle–atom (or molecule) collisions referred to as vapor attachment. Ater nucleation, the saturation ratio should be below the homogeneous nucleation threshold and above saturation. h is can be achieved, for example, if supersaturated vapor is constantly added to the growing aerosol as indicated in Figure 30.5b, compensating the vapor lost by attachment. he corresponding qualitative time dependence of the vapor concentration nv and particle concentration np is shown in Figure 30.6. nv initially rises according to the vapor feed rate.

t

t

FIGURE 30.6 Particle formation under steady addition of vapor: Qualitative time dependence of vapor concentration nv and particle concentration np.

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Handbook of Nanophysics: Principles and Methods

When homogeneous nucleation occurs, particles are formed. hey continue forming, until so much vapor is consumed by this process as well as by vapor attachment to the newly formed particles that S falls below S hom, and homogeneous nucleation stops. From here, particles grow by further vapor condensation and by particle–particle collisions. he latter process rapidly reduces the particle concentration, as the particle–particle collision rate goes with the square of the concentration. Vapor attachment then becomes the dominant growth mechanism because vapor is continuously provided. he particle concentration hardly changes from here. In the free molecular range, where particle size is smaller than the mean free path of the vapor atoms (e.g., 66 nm at normal conditions in N2), the growth rate by vapor attachment is proportional to the particle cross section, so dN d(R3 ) ∝ ∝ R2nv . dt dt

(30.10)

Here N is the number of atoms a particle consists of, which can be expressed through the particle radius R, and nv is the vapor concentration. It follows dR ∝ nv , dt

(30.11)

which means that the particle growth rate is independent of R. his implies that from the point where vapor attachment is dominant, all particles grow by the same amount ΔR in a given time, regardless of diferences in the “initial” size R0, which arise from diferent nucleation times and particle–particle collisions. If ΔR >> R0, we get a size distribution with a small relative standard deviation. We encounter the case of Figure 30.5a in processes where a vapor is suddenly cooled, which induces supersaturation, homogeneous nucleation, and subsequent coagulation. he case of Figure 30.5b corresponds to droplet growth in a cloud chamber, for example, where equally sized droplets are formed. Here, no new vapor is added, but a small degree of supersaturation is maintained by a process of adiabatic expansion cooling. More and more vapors become condensable during that process, which compensates vapor depletion by attachment to the particles. Furthermore, the conditions of Figure 30.5b can, in principle, be achieved in reactors, where a precursor is continuously decomposed, so that the condensable vapor is continuously added to the growing particles. For example, this may happen in a nonequilibrium plasma reactor. Indeed, a stunning example for size uniformity has been given by Vollath et al. [61] for particles generated in such a plasma (see Section 30.3.2.6.4.1). It is likely to be the dominance of vapor attachment that leads to the monodispersity observed according to the considerations above. In any case, processes according to Figure 30.5b have a great potential in producing pure and equally sized particles in a gas-phase process. In practice, homogeneity of the conditions is an important prerequisite for a uniform size distribution. For example, temperature or concentration gradients with growing

distance from the walls of the coninement counteract a uniform size distribution of the product. Size limiting efects would be helpful but they have hardly been observed or pursued in gasphase systems. Vollath et al. [61] point out that charges play an important role in a plasma, and Coulomb forces may have an important inluence on the growth kinetics and suppress cluster– cluster aggregation, because particles above a certain size tend to carry the same charge polarity. his explanation is further elaborated on in connection with nonequilibrium plasma particle production in Section 3.2.6.4.1). he models qualitatively illustrated by Figure 30.5 assume that particle–particle collisions lead to round particles again because coalescence occurs. For the atomic cluster size range, this practically happens under any conditions, and even 5 nm gold particles have been found to coalesce at room temperature, if their surfaces are completely clean [62]. As the melting point is strongly reduced with particle size [63] and particles a few nanometers in size have a liquid-like surface, coalescence is frequently observed and made use of in nanoparticle production. For a given particle size, coalescence stops when the temperature drops below a certain point. Fractal-like [64] irregular structures are then formed, the round units of which (primary particles) may only be bound by van der Waals forces. In processes that produce high particle concentrations, such agglomerated fractal-like structures frequently form. As small particles show a higher tendency toward coalescence, the observed primary particle size is often determined by coalescence. It is the largest size showing coalescence under the relevant process conditions. Incomplete coalescence or sintering at the contact point may form “hard” aggregates. Note that the term “agglomerate” has been established for loosely (van der Waals) bound primary particles and the term “aggregate” indicates strong (e.g., metallic bond) forces between them. In applications, where size efects are used that vanish, when contact with other particles occurs, individual, nonagglomerated nanoparticles are desired. For example, advanced, nanoparticulate ceramics require powders, where interparticulate forces are small, so agglomeration is allowed, while aggregation is undesired because it hinders homogeneous compaction of the powder. In other applications, for example, where high surface-to-volume ratios are required (catalysts, battery electrodes), aggregation may be very favorable. Sintering and coalescence strongly depend on the state of the particle surface concerning adsorbed molecules. A thin layer of oxide hinders particle growth by coalescence and avoids sintering [62,65]. Agglomerates that have once formed can hardly be fractionated, even if the forces involved are only van der Waals type. If the particles are transferred into a liquid, this reduces van der Waals forces, and ultrasound treatment induces some deglomeration. Agglomerates with primary particle sizes of a few nanometers can hardly be split down to sizes below 50 nm, though. he same applies to splitting nanoparticulate agglomerates in a polymer– particle composite by applying shear forces. Where the properties of individual nonagglomerated primary particles are to be applied, avoidance of coagulation directly behind the formation

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Aerosol Methods for Nanoparticle Synthesis and Characterization

process is the only option. Fast dilution is a way to achieve this, and Coulomb forces between particles with equal polarity has been described as a favorable efect in nonequilibrium plasma production routes [61], with the possibility of adding a coating step that guarantees a distance between the particle cores to retain the size efect. If round particles are desired, coalescence can be induced by heating of the aerosol by passing it through an additional tube oven. Metal particles can usually be sintered easily by heating to moderate temperatures [66]. Among the methods reviewed below, only laser ablation and the hot wire generator method have been demonstrated to efectively produce subnanometer particles, but it is clear that in principle, any method based on the condensation of vapor could be modiied to stop growth at this early stage. he reason for the very limited activities in the atomic cluster ield using aerosol methods lies in the extremely high-purity requirements because every atom counts. he hot wire method is of special interest where the purity standards do not correspond to ultrahigh vacuum because the wire “emits” clusters as well as K+ atoms, so that these selectively charge the clusters and not the gas contaminants. Only charged particles are selected or detected. In more sophisticated setups, ultrahigh vacuum-like conditions with respect to contaminants can be reached in one atmosphere of noble gas [9], and this should make aerosol systems competitive with respect to vacuum experiments on atomic clusters on a longer run. he considerations above illustrate how complex nanoparticle formation in the gas phase is. he result of such a process sensitively depends on a large set of thermodynamic and electronic properties of the particle-forming species as well as the surrounding gas composition including impurities down to the parts per billion range. For example, oxygen impurities chemisorb to the surface of coagulating particles, hindering coalescence. A large number of attempts in modeling nanoparticle formation in various condensation-based processes have been made, which exceed the scope of the present chapter. he perfect model would require coupling of chemical reaction kinetics with computational luid dynamics simulations with high time resolution and consideration of the inhomogeneity of most processes, with spatially varying concentrations and particle-size distributions. A complete description of the critical step of nucleation would involve irst principle calculations of the atomic cluster growth. While empirical approaches still play a dominant role in nanoparticle production research, improvements in simulation methodologies and advances in computing power are making the discrepancies between theory and experiment smaller and increasingly enable useful predictions from theory. he following sections outline some of the most commonly used evaporation–condensation methods for the synthesis of nanoparticles and atomic clusters in the gas phase. 30.3.2.2 Furnace Generators he materials of interest are heated in a tubular low reactor (Figure 30.5) such that the partial pressure of the vapor is high enough to provide the supersaturation necessary for homogeneous

Inert gas Ceramic tube

FIGURE 30.7

Aerosol Tube furnace

Cooling

Tube furnace aerosol generator.

nucleation when cooled back to room temperature. A gas stream is passed over the evaporating material to carry the vapor away from the heated section. As the vapor cools, nucleation occurs and subsequent growth by particle–particle collisions (coagulation) determines the i nal particle-size distribution according to Figure 30.5a. Accordingly, the resulting size distributions of the primary particles or agglomerates produced this way are usually log-normal. A diluting stream may be introduced to reduce or avoid agglomerate formation. he residence times, cooling rates, and mixing characteristics allow some control over particle size and morphology. Furnace generators (Figure 30.7) have been used to generate nanoparticles of various substances [67,68]. hey deliver a continuous and constant output and are frequently combined with a diferential mobility analyzer to produce equally sized particles. Of course, the material to be evaporated should have a much lower melting point than the inner walls of the furnace. Otherwise, vapors from the furnace walls lead to contamination. his is intolerable where surface contamination inluences basic particle properties, and it becomes more critical the smaller the particles are. Jung et al. [69] proposed the use of a small ceramic heater and demonstrated that the high-purity silver particles can be generated in this way. Where purity is even more crucial, for example, for atomic clusters, elegant ways to avoid surface contamination by heating only the material to be evaporated have been developed by a resistively heated wire or spark discharge method (see Sections 30.3.2.3 and 30.3.2.4). 30.3.2.3 Hot Wire Generator he hot wire method has been introduced with the irst gas-phase experiments on basic properties of small particles in gas suspension by Schmidt-Ott et al. [70] and subsequently applied in a number of cases for research purposes (e.g., [9,12,71,72]). he particle purity is given by the wire purity. Using wires of high purity, production of neutral adsorbate-free particles was demonstrated by Müller et al. [9]. Helium evaporating from the surface of liquid helium was used to obtain an impurity partial pressure corresponding to ultrahigh vacuum. he amount of material produced hardly reaches 1 μg/h, so that possible applications are restricted to those that require only small amounts of nanoparticulate material such as gas sensors [73]. he material is evaporated by resistive heating of a metal wire subjected to a lowing inert gas (Figure 30.8). he vapor is quenched by dif usional mixing with the gas, which induces

30-10

Handbook of Nanophysics: Principles and Methods

x

K+ ion Ag atom

Charge cluster formation

Boundary layer: diffusive dilution and cooling

T

Dense vapor with ions

Wire

Cold inert gas

FIGURE 30.8 Formation of charged atomic clusters in the vicinity of a hot wire containing Ag and K as the most volatile components.

nucleation. A minimum evaporation rate is required for particles to be formed by this process which is reached below the melting point of most metals. A list of these metals for which the method is applicable is given by Peineke et al. [17]. he method can be extended toward many more materials by coating wires of high melting point with the material to be evaporated. h is has been demonstrated for Au on W [74], and myriad other combinations, including nonconducting and semiconducting materials, should be possible. he conditions are that the surface material to form the particles should wet the electrically heated substrate and that alloying of the two materials is negligible. A signiicant fraction of the particles formed by a hot wire carries an elementary charge, and this is of special interest, because the aerosol is directly applicable for electrostatic size classiication, avoiding an additional charging step that usually introduces contaminants, as shown by Fernandez de la Mora et al. [12]. he origin of negative particle charge is thermoemission of electrons by the wire. hese electrons attach to vapor atoms or the particles forming from them. he positive polarity is also observed and has been explained by cation emission from the wire surface. his efect is governed by the Saha-Langmuir equation [18,75]. It is very efective if the wire contains trace components of low ionization potential like alkali atoms. For example, a K atom sitting on an Ag surface has a high probability of being emitted as a K+ ion because the energy required to bring the valence electron to the Fermi level of the metal can be provided thermally below the melting point of Ag. he voltage V across the wire is usually kept constant because in this mode, the heating power P reduces if the resistance R rises due to the diameter reduction through evaporation loss. his is because the power is given by P = V2/R under these conditions. Wire breakage is avoided this way. he wire diameter changes very slowly, resulting in a change in the current I = V/R of some 10 mA ( 3). he eigenvectors of the free cantilever are

33-4

Handbook of Nanophysics: Principles and Methods

Out 1

La

(1)

ser

In 1 Can tile

ver

In 2 F

G(s)

Amplifier

Out 2 Δz

(2)

ADC

(3)

(a) (4)

F(s, z)

D(s)Δt

v

w 1

+ 0

0.2

0.4

0.6

0.8

1.0

u(t) –

y(t)

1 D(s)

G(s)

Δt

2

2

Normalized length, ξ

FIGURE 33.2 Modal shapes of the irst four lexural eigenmodes of a freely vibrating rectangular cantilever beam.

ϕn (ξ) = cos knξ − cosh knξ −

cos kn + cosh kn (sin knξ − sinh knξ). sin kn + sinh kn (33.6)

For illustration, the shapes of the irst four lexural modes are shown in Figure 33.2. To further simplify the problem, we assume that the tip is massless and that it is located at the free end (ξ = 1). We further assume that the laser for the light-lever detection is focused on the free end and that all forces, such as actuation and tip-sample forces, act on the free end. From the modal-bending shape, we obtain the modal displacement φn(ξ) and the modal delection angle ϕ′n (ξ), which corresponds to an idealized lightlever sensor with an ininitely small laser spot. For realistic laser spot geometries, the calculations are more tedious (Stark 2004b; Schäfer and Fuchs 2005). In order to investigate the system dynamics, we conceive the cantilever as a linear and time invariant (LTI) system, which is subject to a nonlinear output feedback due to the tip-sample interaction (Figure 33.3). he feedback perspective (Sebastian et al. 2001; Stark et al. 2002) allows for a numerically eicient investigation of the system dynamics (Stark 2004a; Stark et al. 2004). he system can be accessed by applying forces u(t) directly as a distributed force (input 1). he other input (2) corresponds to a force directly acting on the tip. Experimentally, driving forces at input (2) can be realized by a magnetic actuation of the cantilever. We will not consider further possible system inputs such as the displacement of the sample or base excitation of the cantilever. Output (1) corresponds to the light lever readout of the system, that is, the signal that is typically measured and output (2) is the delection of the free end of the cantilever. he tip delection ztip(t) (output 2) determines the tip-sample interaction force. h is output oten cannot be observed because

(b)

F(s, z)

FIGURE 33.3 Schematics of dynamic atomic force microscopy. (a) Inputs and outputs of an AFM. (b) Graphical representation of the dynamic system. he cantilever is represented as an LTI submodel G(s). The tip-sample interaction force is a nonlinear output feedback F(s, z), which also depends on the tip position. The dynamic system of the data acquisition (preamplifier, amplifier, and digitization) can be described by an additional LTI system D(s) and a time delay Δt. (Reproduced from Stark, M. et al., J. Appl. Phys., 98, 114904, 2005. With permission.)

the angle of the cantilever delection is measured using optical lever detection (output 1). he state-space form for an N-dimensional system is as given in following equation: xɺ = Ax + bu, y = Cx ,

(33.7)

which is similar to the harmonic oscillator formulation in Equation 33.2. he time-dependent state-vector x = (x1, x2, …) = (xn=1, ∂t xn=1, …) contains the generalized displacements and velocities of the modes. he 2N × 2N matrix A is the system matrix, b the input vector, and scalar u the force input. In the case of multiple inputs, vector b and scalar u transform into a matrix and a vector, respectively. he output vector y consists of the tip displacement output y1, the photo diode signal output y 2, and the tip velocity v1, which are linear combinations of the system states xi. he corresponding weights are given by the output matrix C. Note that it is now necessary to introduce an output matrix that distinguishes between diferent outputs. here is no feed-through between the input and the outputs. he submatrices of the system matrix A are constructed using ˆ n = ω n /ω1 and the modal quality the resonance frequencies ω

33-5

Quantitative Dynamic Atomic Force Microscopy

factors Qn. he dynamics of the nth mode is thus described by the modal state-vector xn, system matrix An, and input vector bn by ⎡ xn ⎤ xn = ⎢ ⎥ , ⎣ xɺ n ⎦ ⎡ 0 An = ⎢ 2 ˆn ⎢⎣ −ω

⎤ ⎥, ˆ n /Qn ⎥⎦ −ω 1

(33.8)

0 ⎡ ⎤ bn = ⎢ ⎥. ⎣ϕn (1) /Mn ⎦ he modal state vector simply consists of the modal displacement and velocity. he modal system matrix corresponds to that of a harmonic oscillator. he irst component of the input vector bn is zero, and the second component describes the coupling of an input force to the eigenmode. It is given by the respective modal displacement φn at the tip position ξtip = 1, weighted with 1

∫ mϕ (ξ) dξ . Here, we have normalized the mass by M = m = 1. the respective generalized modal masses Mn =

0

n

he dynamics of the N-degree-of-freedom cantilever is described by 0 A2 ⋮ 0

⋯ ⋯ 

0 ⎤ ⎡ x1 ⎤ ⎡ b1 ⎤ ⎥⎢ ⎥ ⎢ ⎥ 0 ⎥ ⎢ x 2 ⎥ ⎢ b2 ⎥ + u. ⎥⎢ ⋮ ⎥ ⎢ ⋮ ⎥ ⎥⎢ ⎥ ⎢ ⎥ A N ⎦⎥ ⎣⎢ x N ⎦⎥ ⎣⎢ b N ⎦⎥

(33.9)

0 ⎤ ⎥ 0 ⎥. ϕn (ξ tip )⎥⎦

(33.10)

Here, ξtip = 1 and ξsens = 1 are the positions of the tip and the detection laser along the cantilever, respectively. he modal bending shapes are given by Equation 33.6. his leads to the system output ⎡ ⎤ ⎢ 1⎥ ⎢ ⎥ ⎢ ⎥ ⎢ 2⎥ ⎢ ⎥ ⎢ 1⎥ ⎣ ⎦

y y = ⎡⎣C1 yɺ

C2

⋯

⎡ x1 ⎤ ⎢ ⎥ x2 C N ⎤⎦ ⎢ ⎥ . ⎢ ⋮ ⎥ ⎢ ⎥ ⎢⎣ x N ⎥⎦

⎧ ⎪

D ≥ a0 ,

⎪⎩

D < a0 ,

− HR / [6(z s + z )2 ], 4 ⎪ − HR /6a2 + E * R (a − z − z )3/2 , 3 0 0 s

Fts (z ) = ⎪⎨

(33.12)

where H is the Hamaker constant R is the radius of the tip he efective contact stifness is calculated from E * = −1 [(1 − ν2t ) / Et + (1 − νs2 ) / Es ] , where Et and Es are the respective elastic moduli and νt and νs are the Poisson ratios of tip and sample, respectively. A viscoelastic term Fvis (z ) = −ηzɺ R(a0 − z s − z 0 )

he output matrix C combines the system states to the output vector with the tip displacement y1 and delection readout y 2. he third channel is the instantaneous velocity of the tip v. he modal contribution to the consolidated output is ⎡ ϕn (ξ tip ) ⎢ C n = ⎢ϕ′n (ξsens ) ⎢ 0 ⎣

he interaction between tip and sample is determined by surface forces, which depend on the distance. he distance between tip and sample is D = zs + z. he scalar z is the tip delection and the scalar zs the distance between the undelected cantilever and the sample. van der Waals forces dominate the interaction in the attractive regime (D ≥ a 0). In the repulsive regime (D < a 0), the tip-sample forces are calculated from the Derjaguin–Muller– Toporov model (Derjaguin et al. 1975) that describes the mechanical interaction between a compressible sphere and a compressible plane. he energy dissipation caused by the tipsample contact is neglected. To avoid numerical divergence, the parameter a0 is introduced (García and San Paulo 2000). he tip sample forces are given by

2

i

⎡ xɺ 1 ⎤ ⎡ A1 ⎢ɺ ⎥ ⎢ ⎢ x2 ⎥ = ⎢ 0 ⎢ ⋮ ⎥ ⎢⋮ ⎢ ⎥ ⎢ ⎣⎢ xɺ N ⎦⎥ ⎣⎢ 0

33.2.3 Forces between Tip and Sample

(33.13)

can be added in the contact regime in order to account for energy loss due to viscous sample properties. For very small oscillations around the equilibrium position z0, Equation 33.12 can be linearized (Rabe et al. 1996) ⎧

3 ⎪⎪ − HR /[3(z s + z 0 ) ] ∂ * =⎨ kts = − Fts (z ) * R (a − z − z )1/ 2 ⎪ ∂z 0 0 s ⎪⎩2 E z=z0

D ≥ a0 D < a0

. (33.14)

Here, the contact stif ness kts* is normalized to the cantilever spring constant k by kˆ ts = kts* / k.

33.3 Dynamics of AFM (33.11)

he nonlinear interaction between tip and sample can be modeled as an output feedback, where the tip displacement is fed back to input (33.1) through the interaction force Fts(y1).

33.3.1 Linearized Tip-Sample Interaction Attractive and repulsive interaction forces induce frequency shits of the modes. It is very instructive to discuss the case of very small oscillations, which allows one to use the linearized Equation 33.14. In this case, the output feedback is directly proportional to the system’s position output (2). he elastic surface properties can thus be conceived as a proportional feedback with

33-6

Handbook of Nanophysics: Principles and Methods Ouput(2): light lever log10 (ampl.)

0 –5 0

5 0 –5 180

Phase (deg)

Phase (deg)

log10 (ampl.)

Output(1): tip position 5

–90 –180 –1

–0.5

(a)

0

0.5

1

1.5

0 –90 –180 –1

2

log10 (normalized frequency)

90

(b)

–0.5

0

0.5

1

1.5

2

log10 (normalized frequency)

FIGURE 33.4 Frequency response (Bode plot) of a rectangular cantilever beam. (a) Position output (delection). Moderately attractive (dash dot, kts = −0,7) or repulsive (solid, kts = 0,7) interaction forces shit the resonances to lower or higher frequencies, respectively. (b) Idealized light lever readout. he resonances can even be measured for a strong surface coupling (dashed, kts = 105). (Adapted from Stark, R.W. et al., Phys. Rev. B, 69, 085412, 2004. With permission.)

the gain parameter kˆts. he inluence of the tip-sample interaction on amplitude and phase response is illustrated by the Bode plots in Figure 33.4a. he linearized van der Waals interaction corresponds to a spring with a negative spring constant. he dynamic system sotens and the resonant frequencies (dash-dotted) shit to lower frequencies. By contrast, repulsive tip-sample interaction forces correspond to springs with positive force constants, the interaction hardens the system (solid). he frequency shit ˆ n2 , which rapidly decreases depends on the stif ness ratio kˆ ts / m ω with an increasing mode number n. he resonant frequencies depend on the gain factor of the output feedback, but they are not afected by the choice of the output channel. By contrast, the frequencies of the transmission minima are diferent for the position and the light lever output. For a very stif tip-sample contact with kˆts = 105, the system corresponds to a beam with a pinned end (Figure 33.4). he resonant frequencies of the pinned system are the frequencies of the transmission minima of the free system as measured by the displacement output. he pinned resonances still can be measured in the light lever output. In the case of a pinned tip, the tip does not move but the cantilever itself oscillates, which leads to a varying slope at the end of the beam. his efect illustrates that more generally, the poles (resonances) of a constrained system correspond to the zeros (antiresonances) of the free system (Miu 1993). In the constrained system, poles and zeros cancel for the position output, but not for the delection angle. A physical interpretation is straightforward: the cantilever was modeled as a beam that is actuated by a force at the free end. However, there is now an additional stif spring TABLE 33.2 Resonant Frequency ω0 1

attached to the free end, which directly counteracts an external driving force. hese examples illustrate that a very precise deinition of the system inputs and outputs is essential in order to obtain a realistic description of the system dynamics. h is means for the experimentalist that the system transfer characteristics depend on how the tip displacement is measured and how the forces couple to the sensor.

33.3.2 Nonlinear Dynamics For larger oscillations, the nonlinearity in the tip-sample contact leads to a more complex dynamics. his includes the generation of higher harmonics, the existence of diferent regimes (touching vs nontouching), or chaos. An in-depth discussion of the nonlinear dynamics is beyond the scope of this chapter. In the following paragraphs, we will highlight only a few consequences of the nonlinearity: the existence of two distinct oscillation regimes and the role of noise. For the numerical simulations, a rectangular cantilever interacting with the surface as described by the nonlinear force law of Equation 33.12 was assumed (Stark et al. 2004). he simulations were based on Equations 33.8 through 33.14 and were implemented in MATLAB® Release 2008a and Simulink® (he Mathworks, Inc., Natick, Massachusetts). he model parameters are summarized in Table 33.2. he interaction of a silicon tip with a glass surface was simulated numerically. In the repulsive regime, a small energy loss was assumed. For the numerical simulation of the nonlinear dynamics, a model with N = 3 modes was used. he

Model Parameters Spring Constant

Modal Quality Factor

Young’s Modulus Tip/Sample

Poisson Ratio Tip/Sample

Tip Radius

Hamaker Constant

Parameter

Viscosity

k 10 N/m

Qn 200

Et 129 GPa, 70 GPa

νt 0.28/0.17

R 20 nm

H 6.4 e–20 J

a0 0.166 nm

η 500 Pa s

Note: For the numerical simulation, typical parameters for tapping mode with a silicon cantilever were chosen and a uniform modal damping Q was used for all modes. Sample parameters for fused silica SiO2 were assumed.

33-7

(a)

25

20

20 Distance (nm)

25

15 10 5 0 1 0 –1 –2 –3 –4 –5 –6 –7 –8

15 10 5 0 15 10

Force (nN)

Force (nN)

Distance (nm)

Quantitative Dynamic Atomic Force Microscopy

5 0 –5

0

2

4

6 Time

8

10

12

–10

0

2

4

(b)

6 Time

8

10

12

FIGURE 33.5 Time domain tip trace and tip-sample forces (simulation). (a) Tip oscillation of the unperturbed oscillator. Only attractive (negative) forces occur. (b) Tip oscillation with additional noise. Although the noise cannot be seen directly in the time traces, the tip sample forces are strongly afected. he forces are repulsive (positive sign) and luctuate.

Amplitude (nm)

20 13 16 12 10 10 8

12

4

Phase (°)

0 80 40 0 –40 –80 2 1.5 Energy (eV)

time was normalized to the fundamental resonance. One oscillatory cycle thus corresponds to T = 2π. he resonance frequencies were ω1 = 1.0, ω2 = 6.2669, and ω3 = 17.5475. Two simulations were carried out. In the irst, a perfect experiment without noise was simulated; in the second, an additional stimulus by a random force was assumed. Such a random force may be caused by thermomechanical forcing (Brownian motion), noise in the electronic circuits, or mechanical vibrations. For the simulation of noise, a band-limited white noise was assumed. he time trace of the oscillation and the tip sample interaction are plotted in Figure 33.5. he solutions without noise (Figure 33.5a) and with noise (Figure 33.5b) difer in the interaction forces. Without noise, only negative (attractive) forces occur. By contrast, in the presence of noise also positive (repulsive) forces occur. he noise cannot be seen in the time traces of the tip position, but it seriously afects the tip sample interaction. he interaction is not periodic and the interaction forces luctuate. Figure 33.6a shows the simulated evolution of amplitude and phase of the fundamental oscillation. Without noise, the system remains in the nontouching regime and no energy is dissipated. With the additional noise, amplitude and phase show the wellknown transition to the repulsive regime that is accompanied by energy dissipation (Schirmeisen et al. 2003). he transition can well be identiied by the phase jump and the onset of energy dissipation. he physical reason for this transition is that two stable solutions can coexist, one in the noncontact (small amplitude) and the other in the repulsive regime (large amplitude) (San-Paulo and García 2002). In the case of a bistable dynamics, it depends on the initial conditions, which of both solutions is realized. During approach, the basins of attraction for both solutions change and more and more of the phase space coordinates belong to the repulsive regime (García and San Paulo 2000). h is

1 0.5 0 –0.5

0

5

10

15

20

Position (nm)

FIGURE 33.6 Amplitude and phase of the fundamental mode and average energy dissipated per oscillatory cycle (simulation). he results of two numerical simulations are plotted: without (dashed) and with noise (solid line). he inset in the amplitude curve illustrates the ofset between the noncontact and the contacting solution. Note that the phase shit is given with respect to the phase of the undisturbed oscillation.

33-8

100

100

10–1

10–1

FFT amplitude

FFT amplitude

Handbook of Nanophysics: Principles and Methods

10–2 10–3

10–2 10–3 10–4

10–4 0 (a)

5

10

15

20

Frequency

0 (b)

5

10

15

20

Frequency

FIGURE 33.7 Fast Fourier transform (FFT) of the position output at a set point of A/A0 = 80%. (a) Without and (b) with additional noise. he arrows indicate the second and third lexural eigenmodes, which were excited by the white noise.

means that the nontouching solution becomes less and less stable against perturbations. At a certain point, the variations in position and amplitude due to the additional noise are suiciently large to induce a transition from one solution to the other. he diference between both oscillatory states can also be seen in the FFT spectra in Figure 33.7. In a noise-free numerical experiment, the noise level was small and well-dei ned higher harmonics prevailed. he additional noise led to an increased background. Moreover, the second and third modes were excited to a random oscillation and now occur in the spectrum. he higher order harmonics were much stronger in the repulsive regime (for the 21st harmonic nearly one order of magnitude). his diference was caused by hard repulsive interaction forces, which lead to a signiicant high-frequency response. he numerical forward simulation shows that the interaction force is encoded in the spectral response. For the experimentalist, also the inverse problem is of high interest. he spectral response of the oscillating cantilever is given and the interaction force is to be reconstructed from the signal. We shall discuss the solution of the inverse problem in Section 33.4. Recently, VEDA (http://www.nanohub.org/learningmodules/ veda as of October 7, 2008), a web-based simulator for dynamic AFM was released (Melcher et al. 2008). VEDA is capable of treating several higher modes. he simulation can include experimentally relevant parameters such as viscoelastic and hysteretic energy dissipation and a liquid environment just to mention a few. We recommend that the readers program an example in MATLAB (or similar sot ware) themselves or use the platform VEDA to run their own simulations in order to further explore the nonlinear dynamics of AFM.

33.4 Reconstruction of the Interaction Forces 33.4.1 Overview Time-dependent forces mediate adsorption, ordering phenomena, and viscoelasticity. hese forces are important in rheology and tribology, as well as in biology and catalysis. he importance

of dynamic aspects becomes obvious when looking at the viscoelastic properties of polymers (Wilhelm 2002). Even on the level of a single biomolecule under external stress, velocity dependence can be observed: the stability of the molecule increases with the applied force rate (Evans and Ritchie 1997). Dynamic forces occurring during mechanical contact of surfaces, however, are experimentally not easily accessible. In this context, various modes of dynamic AFM ofer a large potential to mechanically investigate local material behavior at (sub-) microsecond timescales. As current techniques only allow for the measurement of efective forces as average quantities, the time course has to be estimated from models (Giessibl 1997; Hölscher et al. 2000; Hölscher and Anczykowski 2005). As discussed in the preceding sections, it is exactly the information encoded in the anharmonic contributions that contains the duration and the strength of the interaction. he nonlinear interaction generates higher harmonics of the fundamental oscillation, which are resonantly enhanced to signiicant signal contributions by higher eigenmode excitation. In the following paragraphs, we will discuss the inverse problem: the reconstruction of the efective force at the tip from measured data without a priori assumptions regarding the interaction forces.

33.4.2 Signal Formation in AFM System theory provides a convenient formalism to describe the relation between the force input and the measured signal output. In the Laplace domain, with the Laplace variable s = σ + jω, the continuous transfer function of the force sensor is dei ned by G(s) =

y (s ) . u(s)

(33.15)

his characterizes the relation between the force sensor output, u(s), and the input force acting on the tip, y(s). he transfer function can be approximated theoretically by various methods: an ininite dimensional model (Spector and Flashner 1990; Yuan and Liu 2003), a truncated model (Rabe et al. 1996; Stark et al. 2004), or a discrete approximation (Arinero and Leveque 2003).

33-9

Quantitative Dynamic Atomic Force Microscopy

he naive application of theoretical models as discussed in the preceding chapters is hampered by signiicant deviations of the actual cantilever geometry from the idealized geometry and dificulties due to the inite spot size of the detection laser (Stark 2004b; Schäfer 2005; Schäfer and Fuchs 2005). his means that the transfer function has to be estimated from experimental data, since theoretical models may fail to provide suicient accuracy. he signal low diagram of dynamic AFM exhibits two parts, as indicated in Figure 33.3b. he nonlinear circuit (lower part) represents the interaction F(s, z) that couples back on the force–distribution input u(t). he measurement of the cantilever motion relies on a second, linear path, wherein the linear operator D represents the detection (i.e., the photodiode and the electronics). It converts the bending angle φ′(xtip, t) into the signal y(t). Here, x′ denotes the position of measurement along the cantilever. For both operators, G and D, linearity is an appropriate assumption because in a typical AFM-experiment cantilever, delections from the equilibrium are small and only elastic waves with wavelengths larger than 0.1l (cantilever length l) have to be considered. Under these conditions, the linear equation P (s) = G(s)D(s)exp(−sΔt )

(33.16)

describes the signal formation path in dynamic AFM. he relation between system input and output is given by P (s ) =

y (s ) . u(s)

(33.17)

hus, the operator P(s) maps the time trace of the force into the time trace of the signal. Speciically, one physical value is mapped on exactly one signal value and vice versa, which is an important requirement for a sensor. Linearity of the operator P(s) allows for the description of dynamic AFM in the framework of linear response theory. To estimate the system input u(t) from the system output y(t), the transfer function has to be inverted. Although tempting, such an inversion P −1(s) is not straightforward. First, the time delay has to be separated from the transfer function. Second, the bounded input bounded output criterion (BIBO stability) has to be fuli lled. hird, for a real world implementation, the resulting transfer function has to be causal; that is, the system response has to follow the stimulus. In simple words, BIBO stability means that as long as the input is a stable signal, we are guaranteed to have a stable output. Mathematically, this means that a system C with an impulse response h(t) that fuli lls the BIBO criterion is absolutely integrable ∞

∫ |h(t )|dt < ∞.

(33.18)

−∞

For the rational transfer function C(s), this is only the case if both poles and zeros are located in the let half plane, because

due to the inversion, the roles of poles and zeros are exchanged. An AFM force sensor, however, can also exhibit nonminimum phase response, which means that there are zeros in the right half plane (Vazquez et al. 2007). he presence of noise poses an additional problem. he transfer characteristics exhibit weakly damped antiresonances that transform into resonances of the inverted system. In these frequency bands, small model errors or additional noise lead to large measurement errors. he same is true for signals beyond the cut-of frequency of the low-pass characteristics of D(s). hus, the bandwidth available for data analysis is limited.

33.4.3 Identiication of the Transfer Function To reconstruct the time trace of the force from the time series of the delection signal obtained in the experiment, the transfer function P(s) is essential. P(s) can be determined by system identiication procedures that rely on the analysis of the system response to a well-dei ned stimulus (Ljung 1999). he force input has to act on the tip of the free cantilever, and should contain all frequencies. A full spectral characterization of the AFM system allows for a virtual real-time representation of AFM experiments (Couturier et al. 2001), for fast and eicient dynamic control (Sulchek et al. 2000; Sahoo et al. 2003), for nanorobotics (Guthold et al. 2000; Stark et al. 2003), and for time-resolved force measurements (Stark et al. 2002; Todd and Eppell 2003). In a typical calibration procedure, the static relation between the cantilever delection and the photo diode signal has to be determined. he sensitivity is usually estimated from data of force-curve experiments on hard substrates. he spring constant is the second key parameter that has to be determined. For this purpose, various methods can be used. Among the most common techniques are the thermal noise method (Hutter and Bechhoefer 1993; Butt and Jaschke 1995; Burnham et al. 2003; Proksch et al. 2004), the added mass method (Cleveland et al. 1993), the Sader method (Sader et al. 1999), and calibration procedures employing a reference spring (Gibson et al. 1996; Torii et al. 1996; Cumpson et al. 2004). So far, system resonances (Rabe et al. 1996) as well as the mechanical impedance in the frequency range below 100 kHz (Scherer et al. 2000) were determined for a dynamic characterization of the cantilever by external excitation. he experimental estimation of the full transfer function of a force sensor used in AFM goes far beyond these calibration procedures. he need for a priori knowledge is reduced by system intrinsic measurements, which are based on the analysis of discontinuous events in standard force–displacement curves. Figure 33.3 sketches the AFM cantilever in interaction with the sample surface and the corresponding representation as a dynamic system with an output feedback (Sebastian et al. 2001; Stark et al. 2002, 2004). While the forces between tip and sample play the role of a nonlinear output feedback (lower branch), the signal forming path is modeled as a linear time invariant system (upper branch). he experimentally relevant signal path in

33-10

Handbook of Nanophysics: Principles and Methods

Figure 33.3 leads from the tip-sample forces to the sensor readout, described by the transfer function of the entire signal path P (s) = G21(s)D(s)exp(− sΔt ),

(33.19)

which also includes a time delay exp(−sΔt). A time delay can be introduced by analog to digital conversion or may be caused by a inite traveling time of a signal from an input to a distant output. Here, input 2 (located at the tip) and output 1 (located at the laser spot) are collocated on the cantilever. hus, the traveling time of the mechanical wave from input 2 to output 1 can be neglected. For convenience, the transfer function P(s) is split into two components: the rational transfer function GD (s) = G(s)D(s)

(33.20)

and the time delay exp(−sΔt). he transfer function GD(s) describes the dynamic characteristics of the microcantilever together with the detection system. he time delay is treated as a separate parameter. In the Laplace domain, the forces between tip and sample u(s) translate into the signal y(s) by y (s ) =

kols GD (s)exp(− s Δt )u(s). kc

(33.21)

his equation contains the parameters that have to be determined for a full dynamic calibration: the static optical lever sensitivity kols, which is usually obtained from quasi-static force curve data, the spring constant kc as obtained by standard methods, the normalized transfer function GD(s), and the time delay Δt. he theoretical background for estimation of an empirical transfer function estimate (ETFE) is only briely recalled here, a detailed treatment can be found in Chapter 6 by Ljung (1999). he basic idea of this parameter-free estimation procedure is the direct application of Equation 33.15 in order to calculate G(s) without further physical assumptions. Because fast Fourier transformation provides an eicient numerical tool for this purpose, the transfer function is calculated in the Fourier domain. he Fourier transformed of the discrete system output is 1 YN (ω) = N

N

∑ y(t )e

− iωt

,

(33.22)

t =1

with the time series data, y(t), of length N. he system input is given by U N (ω) =

1 N

N

∑ u(t)e

− iωt

.

(33.23)

t =1

In the following, we determine the ETFE, deined by GN (eiω ) =

YN (ω) . U N (ω)

(33.24)

his deinition assumes that U N (ω) ≠ 0 for all ω < ωbw. hus, the ETFE is not deined for frequencies where UN (ω) = 0. he estimate for the transfer function is referred to as empirical because the only assumption is the linearity of the dynamic system. For the experimental estimation of the transfer function GD(s), it is essential to apply a force stimulus to the tip. In this case, forces between tip and sample acting close to the free end couple with nearly equal eiciency to the cantilever. Other stimulating forces may not act directly on the tip or may even be distributed over the structure. Such distributed loads can be produced, for example, by inertial excitation or by electrostatic ields. he jump-out-of-contact response of the AFM cantilever y(t) provides a signal that was used to estimate the transfer characteristics of the cantilever (Figures 33.8 and 33.9). he advantage of this concept is that it dispenses with an external excitation, where the response of the external transducer (e.g., the driving piezo) and its coupling to the cantilever would also have to be determined. In the jump-out-of-contact, the system input, u(t), essentially corresponds to a step function with a negative force, F = −Fadh, as long as the cantilever is attached to the specimen and F = 0 ater the rupture event. hus, the cantilever is loaded by a point force acting on the tip before the cantilever is released. At the rupture event, the force load at the tip is zero. hus, the system intrinsic feedback in Figure 33.8b is switched of for system identiication. Ensembles of several snap-of contact events were extracted from the data by iterative correlation averaging. An average rupture event was calculated and served as basis for the subsequent analysis. he rupture event of the snap-of contact was considered an input force by extrapolating the signal without force load long ater the rupture to the moment of rupture represented zero force. Extrapolating the linear slope before the event, that is, the adhesion keeping the cantilever at the surface, to the moment of rupture allowed for estimation of the quasi-static force load culminating at −330 nN at the moment of rupture. he resulting time trace of the force load was estimated combining both extrapolations (Figure 33.8d). he rupture of the polymer in the tip-sample contact at the jump-out-of-contact time t0 could not be measured directly. Because theoretical models do not predict a time delay in the mechanical part of the collocated system (Spector and Flashner 1990), the time t0 was adjusted to the largest possible value compatible with a causal transfer function of the identiied system GD(s). An uncertainty regarding the time delay Δt of about ive samples (±0.5 μs) remained. As irst step of the identiication procedure, the periodograms of the input U(ω) and the output Y(ω), which are estimates of the respective power spectral density, were calculated (data not shown). he ETFE GN was calculated from the windowed data from Equation 33.24 (Tukey window). he dimensionless magnitude was normalized to unity for a quasi-static input. he corresponding Bode plot is shown in Figure 33.9. he ETFE is highly reliable at the resonances, while the antiresonances are diicult to detect due to the low signal level at those frequencies. Appropriate local smoothing routines improve the quality of the ETFE. Here, we applied local polynomial smoothing to the real and imaginary parts of the ETFE.

33-11

1

1

Jump-tocontact

0 Jump-off-contact

–1 0

100

(a)

200 Piezotravel [nm]

Signal (103 LSB)

Signal (103 LSB)

Quantitative Dynamic Atomic Force Microscopy

0 –1

0.2 ms

(c)

Time

–100 0.1 ms

(b)

(d)

Time

1

y(t)

0

330 nN

Signal (103 LSB)

Signal (103 LSB)

0

–1 u(t)

20 μs Time

FIGURE 33.8 Cantilever oscillations in an approach retract cycle (experimental data). (a) he entire force curve. Details: (b) Oscillations induced by the snap to contact. (c) Oscillations of the free cantilever ater snap-of from the surface. (d) he averaged oscillations ater snap-of (thin line) and the estimate for the tip force (thick line); (1 LSB ≈ 0.977 mV). (Reproduced from Stark, M. et al., J. Appl. Phys., 98, 114904, 2005. With permission.)

interaction force is considered as a system-external feedback; that is, the force acts as input into the system. hus, describing the surface-coupled cantilever (contact mode) by a linear transfer function means approximating the nonlinear feedback by a linear system. Such a simpliication is only valid in the case of very small oscillatory amplitudes. In other cases, the system identiication problem of the nonlinear closed loop system (cantilever and sample) requires a much more elaborate mathematical treatment.

Norm. amplitude

102

100

10–2 π

Phase (rad)

0

33.4.4 Signal Inversion

–π –2π –3π –4π 104

105 Frequency (Hz)

106

FIGURE 33.9 ETFE (gray), smoothed ETFE (gray, dashed), and an 11th order parametric estimate (black) of the transfer function of a free v-shaped cantilever. (Reprinted from Stark, M. et al., J. Appl. Phys., 98, 114904, 2005. With permission.)

Along with this smoothing procedure, the peak at 105 Hz was removed from the data. he Bode plot of the smoothed ETFE is displayed in Figure 33.9. For comparison, the transfer function as obtained by a parametric estimation procedure is also shown (Stark et al. 2005). he transfer function of the free cantilever is a sensor description that is independent of the interaction force. he nonlinear

In the inal step of the analysis, the signal is subject to a purely linear transformation as deined by the transfer function. he time trace of the measured AFM signal s(t) was split into consecutive windows with a length compatible to FFT. For each window, the force FN (ω) was calculated in the Fourier domain by FN (ω) =

SN (ω) . GN (ω)

(33.25)

Here, GN(ω) is the ETFE as discussed in the preceding section and SN (ω) is the FFT of the AFM sensor signal measured during imaging. he time trace of the force f(t) was determined by inverse FFT (Figure 33.10). Noise degraded the signal and thus the analysis had to exclude frequency bands with unreliable information. In critical frequency bands, GN(eiω) > 1, on which optical sources and sinks are considered to be placed. Here, we assume that the let hemisphere L is i lled with a nonmagnetic, transparent,

36.6 Quantum Theory of Optical Near-Fields Field quantization including evanescent waves have been established by Carniglia and Mandel based on the so-called triplet modes (Carniglia and Mandel 1971) that consist of a set of normal modes it for half-space problems. Each of the triplet modes is composed of a set of incident, relected, and transmitted waves connected at the planar boundary via Fresnel’s relations based

L

R

FIGURE 36.11 he detector modes. R detector mode couples to a single optical-sink on the hemisphere R. L detector mode couples to that on L .

36-9

Fundamental Process of Near-Field Interaction

homogeneous, and isotropic dielectric medium of refractive index n (z < 0). Let us consider monochromatic ields of frequency K corresponding to Fourier component of electric ield E(r)exp(−iKt), under the unit in which the light velocity is taken to be unity, c = 1. he complex amplitude E(r) of electric ield satisies the Helmholtz equation ⎡∇2 + K 2n2 (r)⎤ E(r) = 0, ⎣ ⎦

(36.20)

with the refractive index function deined by n(r) = n for z < 0, and n(r) = 1 for z ≥ 0, where n is assumed to be a real number. As the basis to introduce normal modes in half-space problems, we introduce the unit wavevectors of incoming waves from the right of the boundary plane as s (−) = K(−)/K = (sx, sy, −sz), and those of outgoing ields to the let of the boundary plane as κ ( − ) = k ( − )/(nK ) = (κ x , κ y , −κ z ), which satisfy the relations in Equation 36.16. We also introduce the unit wave vectors of incoming waves from the let as κ ( + ) = k (+ ) / nK = (κ x , κ y , κ z ) and those of outgoing ield to the right as s (+) = K(+)/K = (sx, sy, sz). he projection of wavevector onto the boundary plane is conserved because of the spatial translational symmetry in half-space problems, so we introduce nKκ and Ks  deined, respectively, by κ|| = κ2x + κ2y and s|| = s x2 + s 2y . When we consider a problem with a single optical source, it is convenient to employ the triplet modes, shown in Figure 36.10, composed of one incoming and two outgoing plane waves being connected by Fresnel’s relations at the boundary plane. The incoming waves can be connected, respectively, to the optical sources on the right hemisphere, R , and left hemisphere, L , and the two outgoing waves exhibit quantum correlation. Based on the orthogonality relations and completeness confirmed by Carniglia and Mandel (1971), we can introduce annihilation operator, âR(K (−), μ), and creation operator, aˆR† K ( − ) , μ , of photon in the R-triplet mode specified by the wavenumber K(−) and polarization μ, and annihilation operator, â L(k (+), μ), and creation operator, aˆL† k (+ ) , μ , of photon in the L-triplet mode specified by the wavenumber k (+) and polarization μ, which satisfy the following commutation relations:

(

)

(

(

)

(

)

⎡ aˆ (K ( − ) , μ), aˆR† K ′( − ) , μ ′ ⎤ = δ μ , μ′ (2π)3 δ K ( − ) − K ′( − ) , ⎣ R ⎦

(

)

(

)

⎡ aˆL (k ( + ) , μ), aˆL† k ′( + ) , μ ′ ⎤ = δ μ , μ′ (2π)3 δ k ( + ) − k ′( + ) , ⎣ ⎦

(

)

⎡ aˆ (K ( − ) , μ), aˆR K ′ ( − ) , μ ′ ⎤ = 0, ⎣ R ⎦

(

)

(36.21)

(

)

)

⎡aˆ (k ( + ) , μ), aˆL k ′( + ) , μ ′ ⎤ = 0, ⎣ L ⎦

(

) (

Eˆ (r , t ) =

1

(2π)3 − K∫ 0

∑

⎛ ℏK ⎞ ⎜ ⎟ μ = TE ⎝ ε 0 ⎠

1/2

× ⎡⎣aˆL (k ( + ) , μ) E L (k ( + ) , μ, r )exp(−iKt ) + H.c.⎤⎦

)

⎡aˆR K ( − ) , μ , aˆL† k ′( + ) , μ ′ ⎤ = 0. ⎣ ⎦ (36.24)

(36.25)

As the complementary description of the half-space problems, we can introduce the so-called detector modes, shown in Figure 36.11, composed of a single outgoing and two incident plane waves being connected by Fresnel’s relations at the boundary plane. he detector-mode description is especially useful in investigations of radiation properties of photonic sources, since one of the single outgoing waves can be connected to a detector placed on the right hemisphere, R , and let hemisphere, L , in far-ield as a well dei ned i nal state related to the radiation process. Based on the orthogonality relations and completeness coni rmed by Inoue and Hori (2001), we can introduce annihilation operator, âDR (K(+), μ), † and creation operator, aˆDR (K ( + ) , μ) , of photon in the R-detector mode speciied by the wavenumber, K(+), and polarization, μ, and annihilation operator, â DL(k (−), μ), and creation operator, † (k ( − ) , μ) , of photon in the L-detector mode specified by aˆDL the wavenumber, k(−), and polarization, μ, which satisfy the following commutation relations: † ⎡aˆDR (K ( + ) , μ), aˆDR (K ′(+) , μ ′)⎤⎦ = δ μ,μ′ (2π)3 δ(K ( + ) − K ′( + ) ), (36.26) ⎣

(−) (−) 3 (−) (−) ˆ† ⎡ˆ ⎤ ⎣aDL (k , μ), aDL (k ′ , μ ′)⎦ = δ μ , μ′ (2π) δ(k − k ′ ),

(

(36.27)

)

⎡aˆDR (K ( + ) , μ), aˆDR (K ′(+) , μ ′)⎤ = 0, ⎡aˆDL (k ( − ) , μ), aˆDL k ′( − ) , μ ′ ⎤ = 0, ⎣ ⎦ ⎣ ⎦

(36.28)

(36.22)

(36.23) ⎡ aˆR (K ( − ) , μ), aˆL k ′ ( + ) , μ ′ ⎤ = 0, ⎣ ⎦

It is noted that the tree wave components involved in each of the triplet modes are created or annihilated at once in entire space by one of these operations. he electric ield operator is represented in terms of the triplet-mode operators by

(

)

(

)

(

)

† ⎡ aˆDR (K ( + ) , μ), aˆDL k ′( −) , μ ′ ⎤ = 0, ⎡aˆDR K ( + ) , μ , aˆDL k ′( −) , μ ′ ⎤ = 0. ⎣ ⎦ ⎣ ⎦ (36.29)

It is noted that the tree wave components involved in each of the detector modes are created or annihilated at once in entire space by one of these operations. he electric ield operator is represented in terms of the detector-mode operators by

36-10

Eˆ (r ,t ) =

Handbook of Nanophysics: Principles and Methods

1 (2π)3

∫

TM

d 3 K (+ )

Kz >0

⎛ ℏK ⎞ ⎜⎝ ε ⎠⎟ 0 μ = TE

∑

1/2

× ⎣⎡aˆDR (K (+ ) , μ)EDR (K (+ ) , μ, r )exp(−iKt ) + H.c.⎦⎤ +

1 (2π 3 )

∫

TM

d3 k (−)

− kz < 0

⎛ ℏK ⎞ ⎜⎝ ε ⎠⎟ 0 μ = TE

∑

1/2

× ⎣⎡aˆDL (k ( − ) , μ)EDL (k ( − ) , μ, r ) exp(−iKt ) + H.c.⎦⎤

(36.30)

Based on the triplet-mode and detector-mode formalisms, we can evaluate quantum optical processes in half-space problems. As in general, for the theoretical treatment of radiation problems related to material two-level systems in near-resonant regime with monochromatic optical ields, Hamiltonian for electromagnetic interactions is given by

∫

ˆ (r , t ), VˆI (t ) = −e d 3 rJˆ(r , t ) ⋅ A

(36.31)

where Jˆ(r, t) is the probability current density deined for the ˆ (r , t ) by material ield Ψ

{

}

{

}

iℏ ⎡ ˆ † (r , t ) Ψ ˆ (r , t ) − Ψ ˆ † (r , t ) ∇Ψ ˆ (r , t ) ⎤ , ∇Ψ Jˆ(r , t ) = ⎦⎥ 2m ⎣⎢ (36.32) and Â(r, t) is the vector potential operator deined by the operator relation derived from Maxwell’s equation ∂ ˆ Eˆ (r , t ) = − A (r , t ) ∂t

(36.33)

from the corresponding electric-ield operators of the triplet and detector modes. When we consider a quantum optical process in which the entire system composed of the ields and the two-level material system exerts a transition because of the electromagnetic interaction from an initial state |i〉 to a inal state | f 〉, the transition probability dΓ is given, according to Fermi’s golden rule, by dΓ =

2 2π f VI (0) i dρ ( K ), 2 ℏ

(36.34)

where dρ(K) indicates the inal state density of the electromagnetic ields plus material two-level system. It should be stressed that the density of the i nal state governs the transition process regardless of the dynamics of the quantum mechanical coupled matter-ield system described by the transition amplitude. Since the density of i nal state is determined by interaction processes with environmental systems described in terms of dissipation, the dynamics of the overall transition process between the initial and i nal states of the coupled matter-ield system depends strongly on the dynamics of the environmental systems. In our current problem, the environmental

system consists of the optical sources and detectors placed on each hemisphere, R and L. Here, the diference between the triplet and detector modes becomes signiicant with respect to the inal state, since the triplet modes involves two outgoing waves in contrast to the detector modes, each of which has a single outgoing wave in its inal state. We should discuss further on this problem since it is related to one of the most important issues in the study of functional systems in nanoscience and nanotechnology including nanophotonics. Before proceeding to the study of these issues, we should clearly identify the two diferent aspects of these problems. One is the problem in which we consider absorption and emission of optical energy by the material two-level system inside the two hemispheres, which is coupled with the approximately free optical ields described in terms of the triplet or detector modes. he other is the problem in which we consider optical energy transfer through the assumed boundary plane in the half-space problem under consideration. he latter is related to the function of nanophotonics devices and systems, which is based on optical energy transport via near-ield optical interactions. Firstly, let us consider the former problem related to absorption and emission processes of the material two-level system inside the hemisphere. When we employ the triplet-mode description, we should be careful about the correlation between the observation processes at the two detectors, since each of the triplet modes involves two outgoing waves. his aspect involved in the triplet-mode description is similar to those found in beam-splitter problems in quantum optics. hat is, when we consider emission properties of a single excited material two-level system by using an uncorrelated detector pair on the R and L hemispheres, we can observe the antibunching property in photon detection processes, which results in a single photon detection by only one of the two detectors within the coherence time of the emission process. In contrast, when we consider a correlated measurement of the outgoing waves by introducing a certain coherence property between two detectors, such as interferometry observation, the correlated detectors dissipate the corresponding higher-order coherence involved in the photon emission process. In conclusion, the photon emission properties of the material two-level system, and therefore the transition probability, depend on the correlation between the detectors. In contrast to the above, when we employ the detector mode description, the evaluation of the inal state density is straight forward for the photon emission problem under consideration, since each of the detector modes involves only a single outgoing wave. he coherence properties are described as the correlation between the two incoming waves involved in each of the detector modes, which is established during the internal interaction of the coupled matter-ield system in the two hemispheres. For instance, if we consider that the let half-space is i lled with dielectrics and that an atomic two-level system resonant with optical ield is put in the optical near-ield of the dielectric surface in the right half-space, the incoming wave in the dielectric side represents the overall response of dielectrics to the radiation from atomic dipole and, therefore, corresponds to image dipole picture appeared in the treatment of

Fundamental Process of Near-Field Interaction

classical electromagnetic boundary problems. Here, we restrict our discussion within notiication of these aspects. For a detailed study on the optical near-ield photon emission and absorption, one can refer to the articles by the authors (Inoue and Hori 2001, 2005, Inoue et al. 2005). Secondly, let us consider the latter aspect related to energy transport between the sources and detectors placed, respectively, on the let and right hemispheres. According to authentic treatments of scattering problems based on ield theory, all the photons injected in the system from the source are considered to be annihilated in the system, and the photons emitted out of the system are those created in the system. he energy transfer through the boundary plane should be described in terms of the creation of photon in the let-triplet mode by the photonic source on the let hemisphere and succeeding annihilation of the photon by the material systems inside the hemispheres followed by creation of photon in the right-detector mode by the material systems inside and succeeding annihilation of the photon by the detector on the right hemisphere. he connection between the annihilation and creation processes of photons inside the system is governed by the coupling of the system with an internal environmental system or an additional reservoir connected to the system within the two hemispheres. h is corresponds to the generally recognized aspect for directional transport processes that the dynamics of the entire system becomes irreversible due to dissipation. he issues regarding the dissipation of transport processes in a nanometer scale or, in other words, the study of transport processes in a local system, remain unsolved and are under extensive study at present. hese issues, however, are one of the key issues toward innovation in functional devices and systems in nanotechnology including nanophotonics since signal transfer processes, in general, are based on the electromagnetic energy transport driven by electromagnetic interactions between electronic systems (Hori 2001).

References Carniglia C. K. and Mandel L. 1971, Quantization of evanescent electromagnetic waves, Phys. Rev. D 3: 280–296. Hori H. 2001, Electronic and electromagnetic properties in nanometer scales, in Optical and Electronic Process of NanoMatters, ed. M. Ohtsu, pp. 1–55, KTK Scientiic Publishers, Tokyo Japan.

36-11

Inoue T. and Hori H. 1996, Representations and transforms of vector ield as the basis of near-ield optics, Opt. Rev. 3: 458–462. Inoue T. and Hori H. 2001, Quantization of evanescent electromagnetic waves based on detector modes, Phys. Rev. A 63: 063805-1–063805-16. Inoue T. and Hori H. 2005, Quantum theory of radiation in optical near-ield based on quantization of evanescent electromagnetic waves using detector mode, in Progress in Nano-Electro Optics, Vol. 4, ed. M. Ohtsu, pp. 127–199, Springer-Verlag, Berlin, Germany. Inoue T., Banno I., and Hori H. 1998, heoretical treatment of electric and magnetic multipole radiation near a planar dielectric surface based on angular spectrum representation, Opt. Rev. 5: 295–302. Inoue T., Ohdaira Y., and Hori H. 2005, heory of transmission and dissipation of radiation near a metallic slab based on angular spectrum representation, IEICE Trans. Electron. E88-C: 1836–1844. Matsudo T., Inoue T., Inoue Y., Hori H., and Sakurai T. 1997, Direct detection of evanescent electromagnetic waves at a planar dielectric surface by laser atomic spectroscopy, Phys. Rev. A 55: 2406–2412. Matsudo T., Takahara Y., Hori H., and Sakurai T. 1998, Pseudomomentum transfer from evanescent waves to atoms measured by saturated absorption spectroscopy, Opt. Comm. 145: 64–68. Ohdaira Y., Kijima K., Terasawa K., Kawai M., Hori H., and Kitahara K. 2001, State-selective optical near-ield resonant ionization spectroscopy of atoms near a dielectric surface, J. Microsc. 202: 255–260. Ohdaira Y., Inoue T., Hori H., and Kitahara K. 2008, Local circular polarization observed in surface vortices of optical nearields, Opt. Express 16: 2915. Ohtsu M. and Hori H. 1999, Near-Field Nano-Optics: Kluwer Academic/Plenum Publisher, New York. Wolf E. and Niet-Vesperinas M. 1985, Analyticity of the angular spectrum amplitude of scattered ields and some of its consequence, J. Opt. Soc. Am. A 2: 886–890.

37 Near-Field Photopolymerization and Photoisomerization 37.1 Introduction ........................................................................................................................... 37-1 37.2 Some Concepts on Nanooptics: Examples of Optical Nanosources ............................. 37-3 Principles • Examples of Optical Nanosources

Renaud Bachelot Université de Technologie de Troyes

Jérôme Plain Université de Technologie de Troyes

Olivier Soppera Centre national de la recherche scientiique

37.3 Nanoscale Photopolymerization .........................................................................................37-6 Photopolymerization Using Evanescent Waves • Plasmon-Induced Photopolymerization

37.4 Nanoscale Photoisomerization .......................................................................................... 37-11 Tip-Enhanced Near-Field Photoisomerization • Plasmon-Based Near-Field Photoisomerization • Model of Optical Matter Migration

37.5 Conclusions........................................................................................................................... 37-16 Acknowledgments ........................................................................................................................... 37-16 References......................................................................................................................................... 37-16

37.1 Introduction An important domain of nanotechnology is the nanostructuration that involves numerous scientific and economic challenges (Gentili et al. 1994; Bucknall 2005). In particular, the innovative trend of modern technology lies in smaller, cheaper, faster, and better performances. he industry must improve yield by increasing smaller instruments. For instance, cars, cameras, and wireless telephone have combined many functions in a small box. Nanotechnology is an exact example of this trend representing complex technology in commodities. During the last few years, novel structures, phenomena, and processes have been observed at the nanoscale from a fraction of nanometer to about 100 nm, and new experimental, theoretical, and simulation tools have been developed for investigating them. hese advances provide fresh opportunities for scientiic and technological developments in nanoparticles, nanostructured materials, nanodevices, and nanosystems. From the practical efect, the miniaturization of integration circuit and systems means the reduction of raw materials and energy waste. he smaller products are conducive to transportation and utilization, which proves to have more advantages of miniaturization over traditional products. In order to it into the development of modern technology, the advances of nanotechnology are in urgent needs for its beneits. So the development of nanotechnology is driven by both science itself and market. his context explains why nanolithography and matter nanostructuration are important branches of nanotechnology (Gentili et al. 1994), envisioning various applications

and research ields including ultrahigh density storage, nanoelectronics, nanomechanics, and nanobiotechnology. he current techniques of nanolithography are various and numerous (Plain et al. 2006, Sotomayor Torres 2003, Vieu et al. 2000). An exhaustive description and classiication of these techniques is beyond the scope of this chapter. Some of them (among the most important ones) are illustrated in Figure 37.1. Most of the lithographic techniques involve far-ield illumination of the material to be modiied. hey are difraction limited, and the spatial resolution is theoretically not better than λ/2n, where λ is the wavelength of the source used and n is the refractive index of the medium. Among these techniques, let us cite x-ray and electron beam lithographies that allow for resolution in the 30–50 nm range. Lithography using light (wavelengths included in the near-UV to near-IR domain) is particularly appreciated for several reasons of costs and simplicity. Presently, mask far-ield optical lithography is the most widely used technique for pattern mass production in various ields such as microelectronics and microoptics (Sheats and Smith 1998). his technology is optimized and easy to implement compared with x-ray or ion-beam lithography. he photopolymers used are various, well known, and have been optimized for several applications (Chochos et al. 2008). However, the main limit of the optical lithography is its difraction-limited spatial resolution. he typical resolution permitted by UV sources is currently about 100 nm. As shown in Figure 37.1, the current trend is to develop and use new small wavelength deep and EUV sources that would enable a resolution better than 50 nm in the near future (Wagner et al. 2000,

37-1

37-2

Handbook of Nanophysics: Principles and Methods

2007 DRAM 1/2 Picth

65

65 nm

2008 2009

2010 45 nm

2011 2012

2013 32 nm

2014 2015

2016 22 nm

2017 2018

2019 16 nm

2020 2021

2022 11 nm

193 nm 193 nm immersion with water DRAM Half-pitch Flash Half-pitch

193 nm immersion with water Narrow 45 193 nm immersion double patterning options

32

193 nm immersion double patterning EUV 193 nm immersion with other fluids and lens materials ML2, Imprint

22

EUV Innovative 193 nm immersion ML2, Imprint, innovative technology

16

Innovative technology Innovative EUV, ML2, Imprint, Directed Self Assembly

Research required

Narrow options

Development underway

Narrow options

Narrow options

Qualification/pre-production

Continuous improvement

This legend indicates the time during which research, development, and qualification/pre-production should be taking place for the solution.

FIGURE 37.1 Far-ield lithographies. (From IRTS roadmap 2005, www.itrs.net.)

Lin 2006). However, this approach requires expensive development of new technologies: new sources, new optics, and new photopolymers. As an example, the typical price for a 193 nm exposure tool is approximately 15 MDollars; the price of 157 nm exposure tools is as high as 25 MDollars and extreme ultraviolet (EUV) exposure tools may cost as much as 30 MDollars. Another approach consists in increasing the refraction index: immersion photolithography (using liquid), double patterning, and solid immersion lens lithography (using a scanning microlens) allow resolution to be improved by a factor 2, mainly limited by the refractive index of the available materials (Ghislain and Elings 1998; and Sheats and Smith 1998). he near-ield optical lithography and manipulation (NFOLM) is an alternative and elegant method of improving the resolution (Bachelot 2007, Inao et al. 2007, Tseng 2007). NFOLM relies on the use of spatially conined evanescent ields as optical sources. In the case of near-ield illumination, the spatial coninement of the light–matter interaction is not limited by the light wavelength but rather by both source size and sourceto-matter distance (Kawata 2001; Courjon 2003; Prasad 2004).

he advantage of NFOLM compared with the other kinds of lithography is thus to be an optics-based technique without any λ/2n resolution limit. As it will be seen in Section 37.2, NFOLM actually relies on the use of lateral (parallel to material surface) wave vectors k// that are superior to k, the wave vector in medium n. Such high lateral wave vectors can be obtained by either total internal relection (TIR) or dif raction by spatial frequencies >2n/λ (Goodman 1996). High lateral wave vectors involve evanescent waves and nanometer scale light coninement. he control, use, and study of such electromagnetic waves constitute the near-ield optics that has aroused large interest and eforts over the last two decades (Kawata 2001; Courjon 2003; Prasad 2004, Novotny and Hecht 2006). he advent of this science has opened a new ield, and appreciation, for the control and manipulation of light at the nanoscale. In this chapter, we focus our attention on the use of local optical near-ields for high-resolution optical lithography and matter manipulation on photopolymerizable and photoisomerizable systems. h rough some examples, we show that this domain not only enabled production of nanostructures using

37-3

Near-Field Photopolymerization and Photoisomerization

light but also opened the door to nano photochemistry based on the use of evanescent waves. his chapter is divided into the following three sections. In Section 37.2, general considerations on nanooptics are given. he physical efects that are related to speciic optical nano sources used and studied for NFOLM are described. Obviously, a complete review of this area of science is beyond the scope of this chapter. he reader is referred to recent reviews in comprehensive books on nanooptics (e.g., Novotny and Hecht 2006). Here we just remind and summarize some important phenomena. his reminder will be necessary for both commenting and appraising reported experiments. Section 37.3 is devoted to nanoscale photopolymerization. In Section 37.4, principles and experiments of controlled nanoscale photoisomerization are presented. Finally, we conclude and evoke some promising routes.

37.2 Some Concepts on Nanooptics: Examples of Optical Nanosources 37.2.1 Principles Figure 37.2 illustrates the properties of the optical near-ield. An illuminated planar object (x, y plane) dif racts the light though an angular spectrum of plane waves: E( x , y , z ) =

∫∫ Eɶ(u, v, z)exp ⎡⎣i2π(ux + vy)⎤⎦ du dv

(37.1)

his expression is a result of the Fourier theory of dif raction, a consequence of the Huygens–Fresnel principle, described, for example, by Goodman (1996). In Equation 37.1, the amplitude of each plane wave is given by ɶo (u, v )exp(ikz z ) Eɶ(x , y , z ) = A ɶo (u, v )exp ⎛ i2πz (1 − λ 2u 2 − λ 2v 2 )1 2 ⎞ =A ⎜ λ ⎟ ⎝ ⎠

(37.2)

where u and v are spatial frequencies of the Fourier (reciprocal) space ~ Ao is the spatial Fourier function of Ao, the object transmittance E (x, y, z)

Diffracting object A0(x, y) z

x Incident light

FIGURE 37.2

Principles of near-ield optics.

y

Two cases have to be considered: 1. Object features of typical size >λ are associated to low spatial frequencies and keep positive the term in root square in Equation 37.2. In that case, the kz component is real and the waves propagate along z: they can be far-ield detected. Obviously, the higher the lateral spatial frequency, the higher the k x,y, the weaker the kz, the more tilted the axis of wave propagation, and the higher the needed numerical aperture of the objective lens used to detect this propagating wave. 2. Object features of typical size 2π.

37.2.2 Examples of Optical Nanosources Relying on the principles introduced in Section 37.2.1, large eforts have been dedicated to the development of eicient optical nano sources over the past 20 years. Approaches of nano sources are numerous. Most of them have been developed at the extremity of probes for illumination-mode scanning near-ield optical microscopy (Novotny and Hecht 2006). Figure 37.3 illustrates four examples of evanescent optical coninement at a scale smaller than the

37-4

Handbook of Nanophysics: Principles and Methods

λ = 385 nm

102

λ = 600 nm SCS [nm]

101

20 nm

20 nm

(a)

17

E

100

10–1 300

400 500 Wavelength [nm]

600

0

E

0

9 E

10 nm

0

1

k

E

(b)

–24 x [n 0 m]

20 –20

0 m] y [n

20 –20 x [n 0 m]

20 –20

20 –20 0 x [n 0 m] m] y [n

20 –20

20 0 m] y [n

Evanescent field

i > ic

n2

z

n1

Prism 50 nm (c)

(d)

FIGURE 37.3 Examples of evanescent optical near-ield sources. (a) Localized surface plasmons in silver nanotriangles. (From Kottmann, J. P. et al., J. Microsc., 202, 60, 2001.) (b) Tip-enhanced optical near-ield. (Let: From Sánchez, E. J. et al., Phys. Rev. Lett., 82, 4014, 1999.) (c) Dif raction by a nanoaperture. (From Kottmann, J. P. et al., J. Micros., 202, 60, 2001 and Molenda, D. et al., Opt. Express, 13, 10688, 2005.) (d) Total internal relection. See text for details.

light wavelength. hese four examples have been selected because they correspond to optical nanosources that have given rise to many studies and application over the past 20 years, especially in the context of NFOLM. Figure 37.3a shows an optical nanosource supported by localized surface plasmon at the surface of a noble metal nanostructure (MNS). Surface plasmons are quanta of plasma oscillation at a metallic surface (Kreibig and Vollmer 1996). Plasmon modes, corresponding to surface electronic resonance, exist in a number of geometries and in various metals, with the strongest responses in noble metals such as gold and silver. Localized surface plasmons can be coupled to light through evanescent waves difracted by the metal nanostructures themselves. In conined geometries such as gold or silver nanoparticles, not only does the plasmon resonance depend on materials parameters (conductivity, electron efective mass and charge,…), but it also is afected by the shape of the object and its local environment as well as the condition of illumination (Hutter and Fendler 2004). In particular, for simple geometries (spheres, oblate, prolate, etc.), plasmon properties can be predicted by analytical theoretical models issued from the Mie heory. Speciically, the polarizability α of a spheroid takes the well-known following form (Bohren and Hofmann 1983): α(ω) = ε oV

ε(ω) − εm ε m + Li ⎣⎡ε(ω) − ε m ⎦⎤

(37.3)

where ε(ω), εo, and εm are the complex dielectric functions of the MNS, the vacuum, and the surrounding medium, respectively. Metal dispersion function ε(ω) can be correctly described through sophisticated Drude–Lorentz models taking into account both intraband and interband electronic transitions (Vial et al. 2005). V is the MNS volume, and Li describes the spheroid geometry along the axes i (i = x, y, or z). For example, for a sphere, Lx = Ly = Lz = 1/3. Resonance of the MNS corresponds to a minimization of the denominator in Equation 37.3. his condition depends notably on the particle geometry, that is to say Li, as well as on the dielectric environment, that is to say εm. In particular, in the case of a metallic sphere in air, the resonance condition is ε(ω) = −2, which occurs typically in the visible region of the spectrum for gold and silver particles. In the case of non-regularly shaped MNS, numerical calculations are needed, as illustrated by Figure 37.3a that shows the numerically calculated optical properties of silver nanotriangles (Kottmann et al. 2001). At the right side of Figure 37.3a, the scattering cross section is calculated for two types of triangles as a function of the excitation wavelength, revealing the sensitivity of the plasmons resonance to the particle geometry. he two let-side images of Figure 37.3a show the corresponding near-ield intensity distribution in the case of resonance and of resonance. For plasmon resonance (λ = 385 nm), the local ield intensity is much higher than that for of resonance excitation

37-5

Near-Field Photopolymerization and Photoisomerization

(λ = 600 nm). It is interesting to note that in both cases, the ield tends to be conined at the corners of the structure where radius of curvature of the object is small. h is phenomenon, illustrated in Figure 37.3b, is an of-resonance optical efect similar to the well-known electrostatic lighting rod efect. he term lightningrod efect refers to an electrostatic phenomenon in which the electric charges on the surface of a conductive material are spatially conined by the shape of the structure. For a conductor with a nonspherical shape, surface charge density σ varies from point to point along the shape. In the regions of high curvature, σ is locally increased, resulting in a large electric ield just outside the material. Although this efect originates from macroscopic electrostatic considerations, a similar phenomenon can be observed in nanometer-sized metallic structures excited by an electromagnetic radiation. his point of view was discussed in detail by Van Bladel (1995). he free electrons of the metal react to an electromagnetic excitation by inducing oscillating surface charges. When the surface presents a geometrical singularity such as a tip apex, the local surface charge density is drastically increased in this region. As a consequence, the electromagnetic ield outside the tip is not only locally enhanced over the driving ield but also highly conined around the tip apex. Figure 37.3b, let, shows an example of calculated enhanced coni ned ield, acting as an optical nanosource, at the extremity of a gold tip illuminated at λ = 830 nm (Sánchez et al. 1999). he tip is illuminated by a signiicant ield component parallel to the tip axis, i.e., by an incident p-polarization (i.e., incident ield parallel to the incident plane). p-Polarization is actually suitable for exciting an electromagnetic singularity in the vicinity of metal tips, as shown at the right side of Figure 37.3b that represents ield distribution at the extremity of a tungsten tip when illuminated by diferent polarization from p to s (incident ield parallel to the incident plane). It should be stressed that this polarization efect is a consequence of the metal-dielectric boundary condition of the electric ield, as reminded in Equations 37.4 and 37.5:

says that the normal ield component is discontinuous at the metal surface as a consequence of the Gauss heorem: this ield component vanishes inside the metal but can be high outside depending on σ. In the case of incident p polarization, the ield is mainly parallel to the tip axis and normal to the metal surface just beneath the foremost tip’s end, resulting in a local strong ield. In the case of s polarization, ield is tangential beneath the tip’s end, which remains uncharged. With incident s-polarization, only the tip’s edges can present signiicant (but nonlocalized) ields because ields are mainly normal at the edges. As it will be seen in Sections 37.3 and 37.4, such sources have been eiciently used for optical near-ield nano-manipulation of photopolymers. Figure 37.3c shows optical nanosources that are generated at a nanoaperture surrounded by a metallic screen. his efect can be described by the Bethe–Bouwkamp model of dif raction by nanoholes (Bethe 1944, Bouwkamp 1950). For such a source, the light is squeezed at the aperture by the surrounded metal. Aperture scanning near-ield microscopy has been relying on this efect for 25 years (Novotny and Hecht 2006). In general, Aperturebased nano sources are developed at the extremity of tapered optical ibers. he development of these sources has given rise to many scientiic and technological challenges, whose detailed description (Novotny and Hecht 2006) is beyond the scope of this chapter. he example presented in Figure 37.3c shows calculated ield distribution (let) as a function of the geometry of an aperture integrated at the extremity of a tip (see an example of realization at the right side of Figure 37.3c), illustrating the high sensitivity of the near-ield features to the local geometry. Figure 37.3d illustrates a total internal relection resulting in a light nanoscale coni nement along one direction. When an incident light beam emerges from a high refractive index (n1) medium into a lower index (n 2) medium with an angle greater than the critical value i c dei ned by

n × ( Emet − Em ) = 0

(37.4)

n ⋅ (Dmet − D m ) = σ

(37.5)

an evanescent electromagnetic ield is generated from the interface into the medium of refractive index n2 < n1. he beam intensity at a distance z into the i lm I(z) is given by Equation 37.7, where I0 is the intensity of the incident beam. he decay rate γ, of the exponential term depends on n1 and n2, the wavelength of the light beam λ, and the angle of incidence i (Equation 37.8).

where Emet, Em, Dmet, and Dm, are, respectively, the electric ield within the metal, the electric ield within the dielectric medium, the electric displacement within the metal, and the electric displacement within the dielectric medium, all at the metal surface n is the unit vector perpendicular to the metal surface of charge density σ Let us remember that the electric displacement is proportional to the electric ield through the respective permittivity ε of the media (ε is a scalar for isotopic media and a tensor for anisotropic ones). Equation 37.4 says that the tangential ield component is continuous at the metal surface: the ield vanishes (through the skin depth) both inside and outside the metal. Equation 37.5

ic = arcsin(n2 / n1 )

I (z ) = I 0 ⋅ exp(−2 γz ) γ=

2π (n1 ⋅ sin(i))2 − n22 λ

(37.6)

(37.7) (37.8)

1/2γ has the dimension of a length, and it is called the characteristic penetration depth. As explained in Section 37.2.1, this evanescence is enabled by the high wave vector lateral component that is continuous at the n1/n2 interface. As it will be seen in the next section, such a nanoscale ield penetration depth was used to produce polymer nanoilms.

37-6

Handbook of Nanophysics: Principles and Methods

3. Polymerization 4. Termination of polymerization by inhibition or other phenomena

37.3 Nanoscale Photopolymerization Photopolymers are chemical systems of high interest. he general concept of crosslinking photopolymerization is to transform and vitrify irreversibly a luid monomer or oligomers into a macromolecule structure by a light-induced chain reaction (Selli and Bellobono 1993). Among many advantages such as low temperature conditions and solvent-free formulations (Decker 1993), the interest of light-induced polymerization is to allow a control of the polymer structure via selected monomers, wavelength irradiation, and light intensity. If light is focused onto a limited area, the extent of the polymerization can be advantageously spatially controlled and conined to create complex objects with various functions. h is possibility makes them attractive for many applications such as holographic recording (Lougnot 1993), optical data storage (Guattari et al. 2007), and dif ractive optical elements fabrication (Carré et al. 2002). Moreover, since their elementary building blocks (monomers or oligomers) are of nanometric scale, these materials present a high potential for nanotechnology applications and, in particular, for nanophotolithography. Like in thermal polymerization, several mechanisms can be involved: free-radical, cationic, and anionic. An example of free-radical system sensitive in the green is given in Figure 37.4. his igure also details the pathway that leads to the photocrosslinking of an acrylate-based monomer by a free radical process. It entails four main steps:

he photoinitiator is the central element in this mechanism. Many diferent systems have been developed to it the diferent families of monomer, different excitation wavelength and irradiation conditions (atmosphere, presence of interfering chemical, etc…). An overview of photoinitiators can be found in ref (Fouassier 1993). he system depicted in Figure 37.4 is a mixture of three components: a xanthenic dye sensitizer (Eosin Y), a co-initiator (methyldiethanolamine, 8 wt.%), and a triacrylic monomer base (pentaerythritol triacrylate—PETA). Due to the presence of Eosin, the system is particularly sensitive to visible wavelength (spectral range from 450 to 550 nm), and thus it its well with the main green emission ray of the argon laser (514 nm). he photopolymerization reaction is initiated through a free-radical process (Lougnot and Turck 1992). Two components are involved in the radical formation: the dye that absorbs the visible radiation and the amine that can be oxidized by the triplet state of the dye. Once the radicals trigger the polymerization, the monomers polymerize, developing into a three dimensional network. he unreacted monomers are eliminated by rinsing with ethanol. One speciic characteristic of this formulation is related to the existence of a threshold of polymerization that allows a sharp control of the polymerized area. his efect is mainly due to the well-known efect of free-radical reaction quenching by oxygen (Croutxe-Barghorn et al. 2000). In addition, the PETA contains

1. Absorption of the photon by the dye 2. Production of reactive species from the dye excited states

Oxygen quenching

Photoinitiation E* (Singlet)

Intersystem conversion O2 E* (Triplet)

hν΄ Fluorescence

hν Absorption

Redox reaction

Oxygen quenching

+ MDEA O2 R + EH

ROO

Eosin (E)

No polymerization

Photopolymerization R

RMOO n Crosslinked polymer network

O2

FIGURE 37.4 Scheme of photopolymerization of the acrylic resin. he three main steps are presented: photoinitiation by absorption of light by the photoinitiating system (top let), polymerization of the acrylic monomer (bottom let), and competitive process of quenching by oxygen (right).

37-7

Near-Field Photopolymerization and Photoisomerization Monomer conversion (%)

Mirror High index prism

(n = 1.52) 50%

High index prism

Argon ion laser Photopolymerizable resin Evanescent wave Beam splitter

Polymer Limit of gelification Liquid (n = 1.48) 0%

Eth

Absorbed energy

FIGURE 37.5 Typical response of a photocrosslinkable resin, showing the typical reticulation rate and associated refraction index as a function of absorbed energy density. Eth is the threshold energy.

300 ppm of thermal polymerization inhibitors added to stabilize the monomer, e.g., to avoid any unlike thermal polymerization. he efect of these compounds is to inhibit the polymerization process as long as the absorbed light dose remains lower than a threshold value. Consequently, the sensitivity of the system is characterized by a curve that shows the degree of cross-linking as a function of the received energy Er. his curve, presented in Figure 37.5, corresponds to the typical behavior of a formulation that can be polymerized following a radical process. One can note that polymerization starts only when the absorbed energy is greater than a threshold value Eth. he formulation is thus characterized by a non linear threshold behavior, allowing for high-resolution patterning. his resin has already proved its interest for applications in holographic data storage (Jradi et al. 2008a), optical microdevices fabrication (Jradi et al. 2008b). To demonstrate its potential in the frame of nanofabrication, two conigurations involving optical near-ield photopolymerization were evaluated: evanescent wave created by total internal relection and MNS plasmon excitation.

37.3.1 Photopolymerization Using Evanescent Waves As explained in Section 37.2, evanescent waves can be generated by total internal relection at an interface between two materials with diferent refractive indexes (see typical coniguration at the top of Figure 37.6). In our case, we used a high refractive index prism in contact with a photosensitive resin. When light is totally relected internally at the interface between media of high and low refractive indexes, evanescent waves are created along the interface with highly limited penetration in the second medium. If this medium is composed of a photosensitive resin, the evanescent waves can be advantageously used to induce the photoinduced modiication of the resin. h is approach was irst developed by Ecofet et al. (1998), and it allowed one to demonstrate that optical near-ield can be used to trigger free-radical polymerization. he penetration depth dei ned in Section 37.2

Interference area

FIGURE 37.6 Experimental setups for evanescent wave photopolymerization. Top: One beam configuration. Bottom: Interferometric configuration used to generate 1D periodical patterns (top view).

can be interpreted here as the thickness of the layer in which actinic light is conined. he thickness and/or the shape of the polymer parts obtained by this technique can be correlated with the photonic properties of the laser beam. According to the properties of evanescent waves, the energy received by the material decays exponentially with the distance from the interface and is proportional to the exposure time and laser power. One can assume that the material solidiies as soon as the energy received exceeds a threshold value Eth. Under this assumption, the relationship described in Equation 37.9 predicts the thicknesses of the polymerized layer e, as a function of the intensity of the incident beam at the interface I0, the exposure time te, and the decay rate γ of the evanescent wave. he validity of this theoretical relationship was checked by studying the thickness of planar polymer ilms as a function of the photonic and optical parameters (Espanet et al. 1999a). e=

1 ⎛ I 0t e ⎞ ln ⎜ ⎟ 2γ ⎝ Eth ⎠

(37.9)

In Equation 37.9, the incident intensity at the interface I0 can be homogeneous along the irradiated area. In this case, a polymer i lm with constant thickness is created. I0 can also be a function of planar spatial coordinates (x, y). If a sinusoidal light repartition generated by interference between two coherent laser beams is used, the thickness of the polymer i lm is then a direct image of the sinusoidal incident ield. his coniguration was used to generate periodical structures of submicronic height. Figure 37.7 shows several objects obtained by evanescent wave photopolymerization. One of the interests of this process is its simplicity and versatility since the dimensions of the objects can be easily tuned by adjusting optical or photonic parameters. Moreover, such coniguration was used to study the photochemistry at nanoscale and the impact of nonhomogeneous irradiation on photopolymerization. In this context, the role of oxygen dif usion is underlined since the typical pattern dimensions and

37-8

Handbook of Nanophysics: Principles and Methods

5 4 m

1

0 0

(a)

141 nm

100 X (μm)

200

2

(b)

y(

2

2.00 μm 0

m

3

4.00 μm

100

)

200

1.5

1

0.5

0

0

Toposurf

Alpha = 4° Beta = 52°

4.63 μm 1 μm (c)

4.63 μm

(d)

FIGURE 37.7 Example of microstructures obtained by evanescent wave photopolymerization. (a) Example of microspot (thickness of 160 nm) (From Soppera, O. et al., Proc. SPIE, 6647, 66470I, 2007. With permission.), (b) 3D microstructure obtained by multiple irradiation (Ecofet, C. et al., Adv. Mater., 10(5), 411, 1998. With permission.), (c) 1D periodic structures obtained by interferometry (pitch of 500 nm, relief amplitude of 140 nm), and (d) 2D periodic structure obtained by multiple exposure interferometry (pitch of 500 nm in both directions and relief amplitude of 120 nm).

irradiation time are compatible with the dif usion parameters of Oxygen within the acrylate matrix.

37.3.2 Plasmon-Induced Photopolymerization Recently, the possibilities of near-ield nanofabrication were extended to plasmon-induced polymerization. his recently introduced approach is based on controlled nanoscale photopolymerization triggered by local enhanced electromagnetic ields of MNS (Ibn El Ahrach et al. 2007). Its principle is depicted in Figure 37.8. A drop of liquid photopolymerizable formulation with the same composition as in the previous part is deposited on MNSs made by electron beam lithography. In a irst approximation, we simpliied the photonic response of the photopolymerizable resin to a binary function: polymerization is supposed to be completely inefective under Eth and complete ater Eth. Ater formulation deposition, the sample is illuminated (λ = 514 nm) in normal incidence by a linearly polarized plane wave. he incident energy is below the threshold so that polymerization occurs only around MNS where local near-ield is enhanced by

surface plasmon resonance. Silver is chosen as a particle material to achieve mutual spectral overlapping between photopolymer absorption and surface plasmon resonance of metal particles embedded in liquid polymer. Ater exposure, the sample is washed out with ethanol to remove any unpolymerized material, dried with nitrogen and UV post-irradiated to complete and stabilize the polymerization, and i nally characterized by both atomic force microscopy (AFM) and polarized extinction spectroscopy. Knowledge of the threshold value ensures control of the procedure and is therefore of prime importance. his threshold was determined as to be 10 mJ/cm2 by using two-beam interference pattern as a reference intensity distribution. he characterized formulation was used for near-ield photochemical interaction with the MNS. he MNSs covered by the formulation were illuminated with an incident energy density four times weaker than the threshold of polymerization. Figure 37.9a and b shows the result of the experiment as imaged by AFM. Two symmetric polymer lobes built up close to the particles can be observed, resulting in metal/polymer hybrid particles. he two lobes originate from the excitation of MNS’s dipolar. Surface

37-9

Near-Field Photopolymerization and Photoisomerization

Intersystem conversion E* (singlet) E* (triplet) hν FDTD

Redox reaction

P Optical nanosource Y Eosin (E)

+ MDEA

EH + R Free-radical polymerization Crosslinked polymer network

R

n

FIGURE 37.8 Principle of nanoscale near-ield free-radical photopolymerization. he irst step of the process is the local absorption of light by eosin. (From Ibn El Ahrach, H. et al., Phys. Rev. Lett., 98, 107402, 2007. With permission.)

P

E

E

97 nm

260 nm (a)

(b)

(c)

FIGURE 37.9 Near-ield nanoscale photopolymerization in the vicinity of silver nanostructures. (a and b) AFM images recorded ater irradiation and developing of the silver nanoparticles arrays covered with the photopolymerizable formulation. (c) Intensity distribution in the vicinity of an Ag particle embedded in the formulation as calculated by FDTD method (λ = 514 nm). he white arrows represent the incident polarization used for exposure. (From Ibn El Ahrach, H. et al., Phys. Rev. Lett., 98, 107402, 2007. With permission.)

plasmon resonance (SPR), as numerically illustrated in Figure 37.9c obtained through a inite diference time domain (FDTD) calculation (Talove and Hagness 2000). he ield distribution associated with the resonance is enhanced in a two-lobe region oriented with the incident polarization. he localized nanoscale photopolymerization is the result of the inhomogeneous ield distribution showed in Figure 37.9c. he two lobes can be viewed as a three-dimensional polymer molding of the locally enhanced optical ields. Figure 37.9a and b shows that it is possible to control nanoscale photopolymerization in the visible region of the spectrum by using the near-ield of resonant metal nanoparticles. his control was made possible by precise knowledge of the polymerization threshold and results from the abilities of the conined optical near-ield of MNS to quickly consume dissolved oxygen at the nanometer scale (oxygen acts as an inhibitor of polymerization) (Espanet et al. 1999b). Figure 37.9 also shows that the intrinsic resolution of the material is very high. his property is one intrinsic characteristic of the negative tone resin

that was used to hybridize the metal nanoparticles: the elementary building blocks are of molecular size, and in addition, a fast transition from liquid to gel under light excitation allows obtaining a well-dei ned border between reacted and unreacted parts of the photopolymerizable material. On the other hand, our approach constitutes a unique way of quantifying experimentally the ield enhancement associated with localized surface plasmon resonance. his approach relies on the precise knowledge of a value characteristic of the photosensitive material: the threshold energy. In the present case, we learn that the intensity enhancement factor is greater than four because the polymerization threshold was locally exceeded. his result is in agreement with the calculated enhancement factor of 12 (not shown). We performed the same exposure using gold particles instead of silver particles. No local polymerization was observed. h is is certainly due to the fact that resonance enhancement factor is not superior to 4. his point was conirmed by FDTD calculation that predicted an intensity enhancement factor of about

37-10

Handbook of Nanophysics: Principles and Methods

3.5 for embedded gold particles at λ = 514 nm. Further studies based on multiple exposures will allow us to quantify precisely the enhancement factors involved in SPR in the near future. Figure 37.9 clearly shows that polymerization was not isotropic due to the inhomogeneous nature of the actinic ield. his suggests that the modiication of the Ag particle’s plasmon resonance due to local change of the medium is not isotropic. his is conirmed by Figure 37.10. Extinction spectra of the array taken under diferent conditions are shown at the top of Figure 37.10. Spectrum (a) is the initial spectrum of the particles deposited on glass exposed in air. Spectrum (b) shows a 50 nm red shit in the 1.50

(d)

1.45 (c)

1.40

(b)

Intensity (a.u.)

1.35 1.30 1.25 1.20 (a)

1.15 1.10 1.05 1.00 500

Wavelength (nm)

600

90 60

120

524

Resonance wavelength (nm)

520 30

150

516 512 508

0

180

512 516

210

330

520 524

240

300 270

FIGURE 37.10 Spectral properties of the hybrid metal/polymer obtained through near-ield photopolymerization. Top: the extinction spectra from a silver nanoparticles array (a) array in air on a glass substrate, (b) array in initial liquid polymer (before exposure), (c) on hybrid particles excited along the minor axis, and (d) on hybrid particles excited along the major axis. Bottom: Polar diagram showing the particle plasmon resonance peak as a function of the polarization angle around the hybrid nanoparticles. 120° and 30° correspond to the particle major axis and minor axis, respectively. (From Ibn El Ahrach, H. et al., Phys. Rev. Lett., 98, 107402, 2007. With permission.)

liquid polymer (just before exposure). For spectra (a) and (b), the SPR shows an isotropic response to the polarization, within the sample plane, due to the circular symmetry of the particles. Spectra of the hybrid particles were measured for two extreme polarization angles. Spectrum (d) was measured for a polarization parallel to the major axis of the hybrid particle. Compared to spectrum (a), it shows a 28 nm red shit in the resonance. Spectrum (c) was obtained for a polarization perpendicular to the minor axis of the hybrid particle, and compared to spectrum (a), a 8 nm red shit is measured. he anisotropy of the medium surrounding the particle is the reason for these two diferent red shits, which are the indicators of a spectral degeneracy breaking. Before local photopolymerization, metallic nanoparticles are characterized by a C∞v symmetry corresponding to the rotation Cv axis (Tinkham 1964). Ater polymerization, the two polymerized lobes induce a new lower symmetry: C2v, for which any pattern is reproduced by π in-plane rotation. his new symmetry induces the breakdown of the SPR spectral degeneracy. At the bottom of Figure 37.10 is a polar diagram of SPR peaks obtained by measuring 50 spectra of the hybrid particles for diferent angles of in-plane linear polarization. he two polymerized lobes clearly induced a quasi-continuously tunable SPR in the 508–522 nm range. he local polymerization leads to two plasmon eigenmodes that are centered at 508 and 522 nm, respectively. For any polarization angle, a linear combination of the two eigenmodes is excited, with respective weights depending on the polarization direction. We conclude that the apparent continuous plasmon tuning is the result of a shit in position of the barycenter of the spectral linear combination. his was conirmed by analysis of the full width at half maximum (FWHM) of the spectra acquired. he FWHM was found to be maximal for a polarization at 45° relative to the axis of the hybrid particle, where both eigenmodes are equally excited. hese results conirm the importance of symmetry in a nanoparticle in nanophotonics. he data of Figure 37.10 can be discussed in terms of nanoscale efective index distribution nef that expresses the efect of the respective weights of the eigenmodes. nef is equal to nm + Δnm, where nm is the initial refraction index of an external medium taken as a reference, and Δnm is the polymerization-induced shit in the refractive index. nm was chosen to be 1.48 (silver particles embedded in photopolymer formulation before exposure). Δnm was deduced from following Equation 37.10 that results from diferentiating the denominator of the particle polarizability expressed in Equation 37.3: ⎛ dε ⎞ Δλ = −4nm Δnm ⎜ ⎟ ⎝ dλ ⎠

−1

(37.10)

where ε is the dielectric constant of silver, whose dispersion is known from Palik (1985) Δλ is the measured shit of SPR peak relative to the reference spectrum (see bottom of Figure 37.10)

37-11

Near-Field Photopolymerization and Photoisomerization

he derivation was performed for spherical particles, which is a good approximation for in-plane measurements. For Ag particles in air deposited on a glass substrate, nef is found to be 1.06 as a result of the glass/air interface modifying the SPR. For the hybrid particles, an efective index of 1.15 was found for an excitation along minor axis (suggesting the presence of thin polymer layer along this axis), while the major axis is associated to a 1.3 index, as a consequence of a thicker polymer region along this axis. Note that the bulk polymer index is 1.52. he diference between the efective index associated with the long axis and the bulk value can be attributed to the spatial extent of polymerization, which is limited by the threshold value. he ield surrounding the hybrid particle extends beyond the area deined by

Au

the two polymerized lobes, resulting in a lower efective index. Between the two extreme values, a continuous variation of nef was deduced. he method thus allowed the controlled production of a dielectric encapsulant that can be viewed as an artiicial nanometric refractive-index ellipsoid. he approach presented in this section has unique and numerous advantages compared to the standard approaches based on control of the geometry of the metal particles. In particular, several properties and processes involved in polymer science (Mark 2001) can be coupled to (or assisted by) MNS at the nanoscale. hey include nonlinear/electro-optical properties, possible doping with luminescent (non)organic materials, and chemical control of the refractive index. his approach has been recently used in another experimental coniguration, using diferent metal nano-objects and a commercial SU-8 resin with two-photon polymerization (Figure 37.11) (Ueno et al. 2008). h is example demonstrates the high versatility of this concept in the ield of nanophotochemistry.

37.4 Nanoscale Photoisomerization Au 100 nm (a)

(b)

(c)

|E|΄= 1

max = 2800

|E|΄= max

max = 6300 c–c

max = 85

300

300

100

(d)

c-c 0

100 x (nm)

0

50 z (nm)

200

100

Au

0

Au

y (nm)

y (nm)

Substrate

200

Au

Au

Au

0 (e)

Au

0

100 x (nm)

FIGURE 37.11 (a) SEM image of a pair of gold nanoblocks measuring 100 × 100 × 40 nm and separated by a 5.6 nm wide nanogap before irradiation by an attenuated femtosecond laser beam. (b) SEM image of other nanoblockpairs after 0.01 s exposure to the laser beam polarized linearly along the long axis of the pair. (c) SEM image of another pair after 100 s exposure to the laser beam polarized in the perpendicular direction. (d and e) Theoretically calculated nearfield patterns at selected planes for the excitation conditions of the samples shown in (b) and (c), respectively. In (d), the field pattern is shown on the x-y plane bisecting the nanoblocks at half of their height (i.e., 20 nm above the substrate), and in (e), the field is calculated on the plane coincident with the line c-c shown in (d). The field intensity is normalized to that of the incident wave and therefore represents the intensity enhancement factor. (From Ueno, K. et al., J. Am. Chem. Soc., 130(22), 6928, 2008. With permission.)

Over the past decade, many groups have studied self-developing photopolymers that can spontaneously develop surface topography under optical illumination. It means that the matter moves under the optical illumination, thereby inducing holes and bumps at its surface. One of the most used self-developing photopolymers consists of azobenzene-type Disperse Red 1 (DR1) molecules grated on the poly(methylmethacrylate) (PMMA). he movement of this PMMA-DR1 copolymer has been shown to result from optically induced isomerization of the azo-dyes. Details on this material can be found in comprehensive review papers such as that by Natansohn and Rochon (Natansohn and Rochon 2002). Here we just briely recollect the photochemistry of this photopolymer that is illustrated in Figure 37.12. Figure 37.12 shows azobenzene group grated to a polymer matrix of Polymethylmethacrylate (PMMA). he absorption band of the azo dye is centered in the visible (see absorption spectrum in the inset of the igure). he absorption peak is typically situated around λ = 500 nm. his is why the dye is usually named DR1 (Dispersed Red One). Figure 37.12b shows schematically the process of isomerization. he stable state of the azobenzene molecule presented on the let side is the trans-isomeric coniguration. he absorption in the visible range of a photon induces the transition to the cis-isomer. his state is metastable, and the reverse transition to the trans-state takes place through either thermal activation or optical absorption. herefore, a molecule absorbing a photon undergoes a complete trans-cis-trans isomerization cycle. Provided that there is a nonzero component of the light polarization vector along the intensity gradient, this transition induces a motion of the molecule and a related deformation of the matrix to which the molecule is grated. he polarization selectivity lies in the fact that the azobenzene moieties in their trans-state are strongly anisotropic and preferentially absorb the light polarized along their main axis. he required illumination conditions to observe any photoinduced topography are actually

37-12

Handbook of Nanophysics: Principles and Methods PMMA

O

CH2

C n

C

C O

O

O

H2C H2C

2

CH2

Absorbance

C

2.5

CH3

CH3

1–n CH3 DR1 N

N

1.5 1 0.5

N

NO2

CH3CH2 (a)

300 Isomer trans

400

500 600 Wavelength (nm)

700

800

Isomer cis hν

0.9 nm hν, KT (b)

0.55 nm

FIGURE 37.12 Photochemistry of the PMMA-DR1. (a) Structure. (b) Photoizomerization. Inset: absorption spectrum of DR1.

intensity gradient and a nonzero component of the polarization vector along the intensity gradient. As a consequence, the polymer is self-developing, and ater illumination, its surface presents a topography related to the incident intensity distribution. In a simple way, we can imagine that the polymer is pulled (or pushed) by these photoactivated molecular engines. Nevertheless, the understanding of the motion process at the molecular level is still debated. he simplest proposed model to imagine this molecular motion is the notion of worm-like displacement introduced by Lein et al. (1998a,b). hey proposed that the DR1 molecule acts as a worm that pulls (or pushes) the polymer chain. his hypothesis implies that the displacement is parallel to the long axis of the molecule (and the permanent dipole), as schematized in Figure 37.12. In this section, we present signiicant results of structuration at the nanoscale of a PMMA-DR1 i lm induced by diferent conined optical sources.

37.4.1 Tip-Enhanced Near-Field Photoisomerization Ater many years of interest of the response of a PMMA-DR1 i lm under a far ield illumination in diferent coniguration of polarization and shape (interferences, gaussian beam…) (Natansohn and Rochon 2002), Davy et al. have shown for the irst time the possibility to modify a PMMA-DR1 ilm using the conined electromagnetic ield at the end of an aperture NSOM probe similar to that shown in Figure 37.3c (Davy and Spajer 1996). Using the same approach, Bachelot et al. have demonstrated the possibility to investigate the ield enhancement efect (such as that illustrated in Figure 37.3b) at the extremity of an apertureless metal probe (Bachelot et al. 2003, this example will be described in details below). hen, Andre et al. have shown for the irst time the possibility to modify the topography of a

PMMA-DR1 ilm under near-ield illumination using the optical response of copper colloids deposited on a PMMA-DR1 ilm (Andre et al. 2002). P. Andre and coworkers deposited copper colloids on a PMMA-DR1 i lm and then illuminated the sample with a laser and subsequently recorded, through self-induced topography, a ingerprint of the dif raction of the light by the colloids. hey showed the dipolar response of the near-ield induced. Nevertheless, the preparation of the sample was pretty tricky, and the fact that the nanoparticles are deposited on the i lm induces a breaking symmetry of the refraction index (i.e., nanoparticles are situated at the PMMA-DR1 - air interface), thus inducing complexity in the results interpretations. hese preliminary results somehow opened the door to chemical photoimaging of the electromagnetic near-ield associated. In 2003, Bachelot et al. have shown the possibility to image the complete response (i.e., both the far- and the near-ield components) of the coni ned EM ield at the extremity of a metal tip under illumination. PMMA-DR1 was illuminated with the presence of a metallized Atomic Force Microscopy (AFM) tip at its surface. Ater illumination, the optically induced topography was characterized in situ by AFM using the same tip. his approach enabled a parametric analysis, leading to valuable information on tip-ield enhancement (TFE) (Bachelot et al. 2003, Royer et al. 2004). his physical efect has been described in Section 37.2. In particular, TFE was evaluated as a function of the illumination condition (state of polarization, angle of incidence, etc.) and tip’s features (radius of curvature, material, etc.). As a signiicant example, Figure 37.13 shows the inluence of the illumination geometry. Figure 37.13a shows the AFM image of the PMMA-DR1 surface obtained ater the p-polarization relection mode illumination of a platinum-coated Si tip in interaction with the polymer surface. he centre of the image corresponds to the tip position during the exposure. he igure exhibits two diferent fabricated patterns: a far-ield-type fringes system, which corresponds to

37-13

Near-Field Photopolymerization and Photoisomerization

Å 200.0 150.0 100.0 50.0 0.0

Å 80.0 40.0 0.0 0

0.4

0.8

1.2 μm

0

0.4

0.8

1.2 μm

E φ

φ

PMMA-DR1 E PMMA-DR1

(a)

Prism

(b)

FIGURE 37.13 Tip-enhanced lithography on PMMA-DR1 i lms under p polarization. Inluence of the illumination geometry. (a) Tapping mode AFM image obtained ater the relection mode illumination (φ = 80°, see coniguration below). (b) Tapping mode AFM images obtained using total internal relection (φ = 130°, see coniguration below). (From Bachelot, R. et al., J. Appl. Phys., 94, 2060, 2003.)

37.4.2 Plasmon-Based Near-Field Photoisomerization

E (angle β) Incident laser beam, λ = 532 nm

φ

Metal tip

Photosensitive sample

Dot height (nm)

(a)

(b)

9 8 7 6 5 4 3 2 1 0 –20

0

20 40 60 β (degrees)

s Polarization

the central near-ield spot is very sensitive to the incident angle of polarization (Figure 37.14), conirming that the intensity of the local tip ield is enhanced gradually from s-polarization to p-polarization. The above cited near-field investigations lead to preliminary 30 nm resolution nanopatterning based on TFE (see Figure 37.15 as an illustration). All these experiments stimulated interesting discussions on the nature of the optical response of the molecule. It was speciically shown that while lateral ield components (parallel to the polymer surface) tend to make escape molecules from light along the polarization, longitudinal components (perpendicular to the polymer surface) lit the matter vertically, as a consequence of free space requirement from the molecule. his point of view was conirmed by the investigation of surface deformations in azo-polymers using tightly focused higher-order laser beams (Gilbert et al. 2006) and surface plasmons interference (Derouard et al. 2007) as vectorial sources. Considering that the ield involved in tip-enhanced NFOLM is mainly longitudinal, contrasts observed in Figures 37.12, 37.13, and 37.15 can be explained by the above described polarization sensitivity.

80

100

p Polarization

FIGURE 37.14 Tip-enhanced lithography on PMMA–DR1 i lms. Inluence of the incident polarization (a) Schematic diagram of the experimental coniguration. φ = 80°. (b) Obtained dot height as a function of polarization angle β. (From Bachelot, R. et al., J. Appl. Phys., 94, 2060, 2003.)

dif raction by the tip cone, and a central nanometric dot due to the local enhancement of the electromagnetic ield below the metallic tip. he far-ield contrast (the fringes) vanishes if the tip is illuminated by total internal relection (see Figure 37.13b), providing valuable information about the suitable way of illuminating a metal tip for near-ield optical lithography. he height of

Hubert et al. have shown the possibility to photoimage directly the complex near-ield of plamonic nanostructures using the above approach (Hubert et al. 2005). In particular, they showed the possibility to get all the components of the near-ield. It means that using the PMMA-DR1, it is possible to get a photography of the three diferent components of the ield (Hubert et al. 2008). his photochemical optical near-ield imaging consists of three steps. Silver 50 nm high nanostructures are irst fabricated by electron-beam lithography, typically through the lit-of method. he second step is the deposition of the PMMA-DR1. In our case, the thickness of the polymer ilm is equal to 80 nm, which is suficient to fully cover the structures and thin enough to be sensitive to the optical near-ield of the particles. No drying was performed ater spin coating. he third step consists of illuminating the sample, in this case, at normal incidence. To overlap the 400–600 nm absorption band of the DR1 molecule (see Figure 37.12a, inset), we used the 514 or 532 nm lines of an argon-ion laser or a frequency doubled, diode-pumped Nd:YAG laser, respectively. he polarization and irradiation intensity were carefully controlled and correlated with the detected topographic features. Following the illumination process (step 3), the “imaging” of the optically induced topography is performed through atomic force microscopy. We rigorously calculate the near-ield optical intensities using the inite-diference time-domain (FDTD) method (Royer et al. 2004) and show that the negative image of the computed near-ield intensities can be correlated with the observed photoinduced topographies. his negative image illustrates the fact that the matter escapes from high-intensity regions to low intensity regions and that the involved ield is mainly lateral. he FDTD calculations were fully three-dimensional with appropriate periodic and absorbing boundary conditions. he metals were described

37-14

Handbook of Nanophysics: Principles and Methods

Å 400 300 200 100 0

Å 200 100 0

0

0.4

0.8 μm

1.2

Å 16.00 12.00 8.00 4.00 0.00

1.6

0

0.5

1 μm

1.5

2

0

0.4

0.8 μm

FIGURE 37.15 Tip-enhanced lithography on PMMA-DR1 films under p-polarized total internal reflection mode illumination. Examples of dotted/continuous produced nanostructures with λ = 532 nm (AFM images). (From Bachelot, R. et al., J. Appl. Phys., 94, 2060, 2003.)

by Drude models with parameters itting the experimental dielectric constant data for the wavelengths of interest, as described by Gray and Kupka (2003). he glass substrate and PMMA-DR1 were also included in the calculations, with dielectric constants of 2.25 and 2.89, respectively. Fourier transformations of the time-domain ields on the wavelengths of interest then yield steady-state ields and thus ield intensities. As a irst example of the near-ield imaging capability of this method, Figure 37.16 shows the results obtained with an array of silver nanoparticles. he extinction spectra of the arrays performed ater spin-coating show a typical maximum near 540 nm. A 532 nm irradiation wavelength was used to overlap this resonance plasmon resonance (see Section 37.2). In the case of linear incident polarization, ater irradiation, two holes can be observed (top of Figure 37.16a) in the polymer that are close to the particles and are oriented with the incident light polarization. he depressions correlate remarkably well with

500

500 0

0 –500 –500

(a)

75 nm

(b)

FIGURE 37.16 Nanophotostructuration on PMMA-DR1 i lms. AFM images (top) of array of silver particle taken ater illumination with either linear polarization (a) or circular polarization (b). Irradiation wavelength, time, and intensity were equal to 532 nm, 30 min, and 100 mW/cm2, respectively. heoretical images (bottom) represent the negative of the intensity. he black arrows depict the incident polarization. he white bars represent 500 nm. (From Hubert, C. et al., Nano Lett., 5, 615, 2005.)

the expected dipolar near-ield spatial proile. Numerical calculations of the electric ield intensity distribution around silver nanoparticles covered with PMMA-DR1 and irradiated with a linearly polarized laser beam show that intensity maxima are located at the same position as the holes observed in the topographic image. he theoretical negative of the electric ield intensity is displayed at the bottom of Figure 37.16a; it agrees qualitatively with its experimental counterpart. From these observations, we can argue that topographic modiications observed ater irradiation are due to a mass transport phenomenon photoinduced by the optical near-ield of the metallic silver particles produced by dipolar plasmon resonance. Figure 37.16b shows an example of the ability of this method to spatially resolve complex ields. It shows the result obtained with silver nanoparticles covered with PMMA-DR1 but now irradiated with a circularly polarized laser beam. he silver particles are 50 nm in height, 100 nm in diameter, and have a periodicity of 1 μm. In this case, large topographic modiications are again observed at the polymer ilm surface. he AFM image at the top of Figure 37.16b shows that an inner array of lobes around each particle as well as an outer array of lobes, whose periodicity is equal to the lattice spacing, can be distinguished. hese outer lobes probably result from interferences of difraction orders. Quite encouragingly, the negative computed ield intensity (bottom of Figure 37.16b) also shows inner and outer high relief features around the particles, although they are not as structured as the experimental result. his probably originates from the fact that theoretical calculations do not actually take into account the diffusion of azodye molecules (and the resulting local change in efective refraction index) and thus cannot perfectly reproduce their behavior under illumination with very intense localized nearields. Figure 37.17 shows a few other selected results that conirm the high potential of the method. It shows diferent examples of near-ield optical imaging of silver nanostructures illuminated by a linearly polarized green light. In each igure, the white bar represents the light wavelength (532 nm), while the black arrows represent the direction of the incident polarization. Figure 37.17a shows optical near-ield around gold ellipsoidal particles under light polarization perpendicular to the long axis of the ellipsoids. he ellipsoids are 50 nm in height, with long and short axis lengths of 1000 nm and 60 nm, respectively. Particle-to-particle distances are 800 nm in the long axis direction. Extinction spectra

37-15

Near-Field Photopolymerization and Photoisomerization

(a)

excitation at the edges of the nanorods. For polarization parallel to the rod, an of-resonant electromagnetic singularity is excited, and dips are observed at the extremities of the rods (Hubert et al. 2005). Partial interpretation of Figure 37.17b through d has been proposed (Hubert et al. 2008). It includes the polarization sensitivity evoked in Section 37.4.1. hese images are believed to give insight into interesting efects and behaviors of MNSs: the excitation of quadripolar plasmon modes in elongated gold particles (Figure 37.17b), near-ield diagram of bow-tie optical antenna (Figure 37.17c), and near-ield coupling between two close diferent nanostructures (Figure 37.17d).

(b)

37.4.3 Model of Optical Matter Migration

(d)

FIGURE 37.17 NFOLM on PMMA-DR1 i lms. AFM images of diferent silver nanostructures taken ater linearly polarized exposure (normal incidence). Black arrows depict the incident polarization. he white bars represent the incident wavelength of 532 nm. (a) Ellipses, (b) longer ellipses, (c) bowtie antenna, and (d) coupled rod and circular particles.

performed ater spin coating of the azo-polymer layer indicate that for polarization parallel to the long axis, the 514 nm irradiation wavelength used is outside the resonance plasmon band. On the other hand, in the case of a polarization direction perpendicular to the long axis, the 514 nm irradiation wavelength is resonant with the plasmon band. his agrees well with the experimental observation. In Figure 37.17a, dips can be observed along the long axis of the particles. hese dips are located at the same position as the optical near-ield intensity maxima (not shown here) around ellipsoids for such a polarization. his is conirmed by looking at the corresponding calculated negative image of the ield intensity around the particles for this illumination condition. Hence, Figure 37.17a is an observation of the resonant charge density

Pabs ∝ E 2 cos 2 ϕ

Second, the movement of the dye is assumed to occur along the axis of the molecule (identiied as the direction of the molecular dipole) as described by the inchworm translation model proposed by Lein et al. (Lein et al. 1998a). Using a Monte Carlo approach, matter migration under various far-/near-ield illumination conditions was numerically studied. As an example, Figure 37.18 shows the two typical surface relief gratings (i.e., realized with p-polarized and s-polarized interferometric light beam, respectively) calculated using our model. he topography obtained through 22

1

0 (a)

12 (b)

20

12 (c)

(37.11)

with E the electric ield amplitude φ the angle between the dipole of the molecule (corresponding to the axis of the molecule) and the polarization of the electric ield

20

SRG depth [arb. unit]

(c)

Diferent models have been proposed to allow a better understanding of the matter migration of PMMA-DR1 under illumination (Barrett et al. 1996, 1998, Pedersen and Johansen 1997, Lein et al. 1998a,b, Viswanathan et al. 1999a,b, Barada et al. 2004, 2005, 2006). Nevertheless, the proposed models do not allow to envisage the photoinduced topography at the nanoscale. Recently, a new model based on two hypotheses (Juan et al. 2008) was introduced. First, the probability of absorption by the DR1 is given by

17

2.0 p s 1.0

0.0

0

Iterations

2000

(d)

FIGURE 37.18 Simulation of grating formation on PMMA-DR1 ilms with the stochastic model. (a) he assumed optical interferometric electric ield intensity distribution. (b and c) he resulting photoinduced topography ater 2000 iterations. he axis refers to the height of the topography (arbitrary units, 0 corresponds to the substrate on which the polymer is deposited). (b) p polarization, (c) s polarization. White arrows represent the direction of the light ield polarization. (d) Time evolution of the SRG depth. (From Juan, M.L. et al., Appl. Phys. Lett., 93, 153304, 2008. With permission.)

37-16

the calculation is fully comparable to the experimental results (Cojocariu and Rochon 2004) and turns out to describe at the same time the dynamics of molecular displacement and associated local molecular orientation. his model could constitute a valuable tool for developing optical molecular nanomotors based on the use of azobenzene molecules under polarized laser illumination.

37.5 Conclusions his chapter presented recent exploration of optical interaction between conined optical near-ields and photosensitive organic materials. he selected examples of near-ield photopolymerization and photoisomerization have shown the ability of the optical near-ield to induce physical and chemical processes at the molecular scale. hese experiments not only allowed for the production of nanostructures using visible light but also have opened the door to nanophotochemistry and nonophotophysics based on the use of optical nanosources. Moreover, they lead to progress in the development of new nanosources, in both experimental and theoretical points of view. Taking into account the associated economical and scientiic challenges, the future of the near-ield optical matter manipulation based is likely to be successful. Regarding the tip enhanced approach, it is now possible to control the array of tips working simultaneously (Despont 2007), making the concept of high-density multiprobes optical data storage a priori relevant. Regarding the mask-based NFOLM approach (using a planar structure), the control of the mask-photosensitive material distance turns out to be the key parameter. h is issue will certainly take advantage of the superlens concept that enables the access of near-ield information through negative refraction (Pendry 2000, Fang et al. 2005). Near-ield optical lithography and manipulation are not intended to compete with the objectives dei ned by the International Technology Roadmap for Semiconductors (ITRS, see www.itrs.net) that relies on the decrease of the wavelength. Rather, near-ield approaches should be viewed as complementary tools that are appreciated because of their low cost and easy procedures. In particular, the use of visible light and the possibility of taking advantage of the polarization state of the light represent clear assets. Furthermore, the domain of application of NFOLM is far beyond that of nanolithography for microelectronics since it can involve, for example, high data storage and molecular manipulation. NFOLM can also be used as one step of a more complex procedure of nanolithography. For example, the mold used in nanoimprint (Chou et al. 1996) can be fabricated by NFOLM. Finally, this technology shall take advantage of the large variety of powerful physical near-ield efects in nanometals that have been investigated recently, such as second harmonic generation (Hubert et al. 2007), photoluminescence (Bouhelier et al. 2005), strong near-ield coupling (Atay et al. 2004), and multipole excitation (Krenn et al. 2000). All of these efects will permit higher resolution and better control of intensity and wavelength of the actinic light with regard to photosensitive materials.

Handbook of Nanophysics: Principles and Methods

Acknowledgments he author would like to both cite and thank current and former co-workers for this subject of research (in alphabetical order): D. Barchiesi, A. Bouhelier, S. Chang, M. Derouard, C. Ecofet, R. Fikri, Y. Gilbert, S. K. Gray, F. H’Dhili, C. Hubert, H. Ibn-ElAhrach, M. Juan, S. Kostcheev, N. Landraud, G. Lerondel, D.J. Lougnot, J. Peretti, P. Royer, A. Rumyantseva, C. Triger, A. Vial, G.P. Wiederrecht, and G. Wurtz.

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Lein P., Fiorini C., and Nunzi J. 1998a. Anisotropy of the photo-induced translation difusion of azobenzene dyes in polymer matrices. Pure Appl. Opt. 7: 71–82. Lein P., Fiorini C., and Nunzi J. 1998b. Anisotropy of the photoinduced translation difusion of azo-dyes. Opt. Mater. 9: 323–328. Lin B. J. 2006. he ending of optical lithography and the prospects of its successors. Microelectron. Eng. 83: 604–613. Lougnot D. J. 1993. Photopolymers and holography, in Radiation Curing in Polymer Science and Technology, Vol. III. Polymerisation Mechanisms, J. P. Fouassier and J. F. Rabek (eds.), pp. 65–100. London, U.K. and New York: Elsevier. Lougnot D. J. and Turck C. 1992. Photopolymers for holographic recording: II—Self developing materials for real-time interferometry. Pure Appl. Opt. 1: 251. Mark J. E. 2001. Physical Properties of Polymers Handbook. New York: Springer-Verlag. Molenda D., Colas des Francs G., Fischer U. C., Rau N., and Naber A. 2005. High-resolution mapping of the optical near-ield components at a triangular nano-aperture. Opt. Express 13: 10688–10696. Natansohn A. and Rochon P. 2002. Photoinduced motions in Azo-containg polymers. Chem. Rev. 102: 4139–4175. Novotny L. and Hecht B. 2006. Principles in Nano-Optics, Cambridge, U.K.: Cambridge University press. Palik E. D. 1985. Handbook of Optical Constants of Solids, Orlando, FL: Academic Press. Pedersen T. G. and Johansen P. M. 1997. Mean-ield theory of photoinduced molecular reorientation in azobenzene liquid crystalline side-chain polymers. Phys. Rev. Lett. 79: 2470–2473. Pendry J. B. 2000. Negative refraction makes a perfect lens. Phys. Rev. Lett. 85: 3966–3969. Plain J., Pallandre A., Nysten B. et al. 2006. Nanotemplated crystallization of organic molecules. Small 2: 892–897. Prasad P. N. 2004. Nanophotonics, Hoboken, NJ: John Wiley & Sons, Inc. Royer P., Barchiesi D., Lérondel G. et al. 2004. Near-ield optical patterning and structuring based on local-ield enhancement at the extremity of a metal tip, Philos. Trans. R. Soc. Lond., Ser. A 362: 821–842. Sánchez E. J., Novotny L., and Xie X. S. 1999. Near-ield luorescence microscopy based on two-photon excitation with metal tips. Phys. Rev. Lett. 82: 4014–4017.

Handbook of Nanophysics: Principles and Methods

Selli E. and Bellobono I. R. 1993. Photopolymerization of multifunctional monomers: Kinetic aspects, in Radiation Curing in Polymer Science and Technology, Vol. III. Polymerisation Mechanisms, J. P. Fouassier and J. F. Rabek (eds.), pp. 1–32, London, U.K. and New York: Elsevier. Sheats J. R. and Smith B. W. (eds.) 1998. Microlithography Science and Technology, New York: Marcel Decker Inc. Soppera O., Jradi S., Ecofet C., and Lougnot D. J. 2007. Optical near-ield patterning of photopolymer. Proceedings of SPIE 6647: 66470I. Sotomayor Torres C. M. 2003. Alternative Lithography: Unleasing Potentials of Nanotechnology; Nanostructure Science and Technology, New York: Kluwer Academic/Plenum Publishers. Talove A. and Hagness S. C. 2000. Computational Electrodynamics: he Finite-Diference Time-Domain Method, 2nd edn, Norwood, MA: Artech House. Tinkham H. 1964. Group heory and Quantum Mechanics, New York: McGraw-Hill. Tseng A. 2007. Recent developments in nanofabrication using scanning near ield optical microscope lithography. Opt. Laser Technol. 39: 514–526. Ueno K., Juodkazis S., Shibuya T., Yokota Y., Mizeikis V., Sasaki K., and Misawa H. 2008. Nanoparticle plasmon-assisted twophoton polymerization induced by incoherent excitation source. J. Am. Chem. Soc. 130(22): 6928–6929. Van Bladel J. 1995. Singular Electromagnetic Field and Sources, Oxford, U.K.: IEEE. Vial A., Grimault A.-S., Macías D., Barchiesi D., and Lamy de la Chapelle M. 2005. Improved analytical it of gold dispersion: Application to the modelling of extinction spectra with the FDTD method. Phys. Rev. B 71(8): 085416–085422. Vieu C., Carcenac F., Pepin A. et al. 2000. Electron beam lithography: Resolution limits and applications. Appl. Surf. Sci. 164: 111–117. Viswanathan N. K., Balasubramanian S., Li L. et al. 1999a. A detailed investigation of the polarization-dependent surface-relief-grating formation process on azo polymer ilms. Jpn. J. Appl. Phys. 38: 5928–5937. Viswanathan N. K., Kim D. Y., Bian S. et al. 1999b. Surface relief structures on azo polymer ilms. J. Mater. Chem. 9: 1941–1955. Wagner C., Kaiser W., and Mulkens J. 2000. Advanced technology for extending optical lithography. Proc. SPIE 4000: 344–357.

38 Soft X-Ray Holography for Nanostructure Imaging 38.1 Introduction ...........................................................................................................................38-1 38.2 Principles of Holography ......................................................................................................38-2 Wave Propagation and Dif raction • Optical Constants • Gabor X-Ray Holography • Fourier Transform X-Ray Holography

38.3 Practical X-Ray Holography for Nanostructure Imaging ...............................................38-7 Holographic Mask Fabrication • Detector and Sampling • High-Resolution Imaging • Compensation for Extended References • Multiple References and Coded Apertures • Spectroscopy and Multiple-Wavelength Anomalous Dif raction

38.4 Ultrafast X-Ray Holography ..............................................................................................38-11 Toward Ultrafast Panoramic Imaging • Time-Delay X-Ray Holography

Andreas Scherz SLAC National Accelerator Laboratory

38.5 Outlook..................................................................................................................................38-13 Acknowledgments ...........................................................................................................................38-13 References.........................................................................................................................................38-13

38.1 Introduction With the advent of third generation synchrotrons, new techniques became feasible such as lensless x-ray microscopy and x-ray photon correlation spectroscopy (XPCS) based on the coherent properties of the x-ray beam. In recent years, the development of these scientiic areas have gained tremendous momentum due to the prospect of upcoming x-ray free-electron lasers (XFEL’s) which will provide transversely coherent, intense x-ray pulses on femtosecond timescale. he investigation of ultrafast processes has so far been the domain of optical techniques. Because of the larger wavelength, however, the details of the underlying processes remain unresolved. With the development of new accelerator-based sources, coherent x-rays will provide the spatial resolution to follow ultrafast phenomena on the relevant timescales of atomic motions. Scientists dream of taking snapshots or movies of transient phenomena in materials like ultrafast phase transitions, melting and nucleation efects, nonlinear interaction of x-rays with matter, etc. X-ray holography is one of the key x-ray microscopy techniques for high-resolution imaging which is compatible with full-ield single-shot imaging in coherent beams and is the focus of this chapter. he understanding of the building blocks of materials and macromolecules is of fundamental importance in physics, material science, biology, and chemistry. For example, x-ray crystallography is widely used for structure determination. An important prerequisite is the periodicity of the material. h is approach excludes a wide range of substances which cannot be

grown as crystals, such as amorphous and disordered structures, macromolecules, polymers, magnetic nanostructures, as well as non-periodic electronic and magnetic phases in condensed matter. On the other hand, the fabrication of x-ray lenses for x-ray microscopy is challenging. Building an x-ray microscope based on holography was thought of in the early days (Baez 1952a), since its invention in 1947 by Gabor (1948). h is work, for which Gabor received the Nobel Prize in physics in 1971, was focused on improving the resolution of electron microscopes. At that time, the aberrations in electron optics prevented the microscopes from reaching atomic resolution. Gabor proposed a radical, lensless route to high-resolution imaging as a “new microscopic principle.” he precursor of the lensless x-ray microscope was given by Bragg (1939, 1942). his concept recovers an optical image of the atomic structure from experimental difraction data. An array of holes drilled in a plate mimicked the amplitudes and the positions of a recorded x-ray difraction pattern. Under coherent illumination, the array emanated secondary wavelets forming an image of the atomic lattice on a screen in the far ield. his two-step imaging process rests on Abbe’s difraction theory of image formation by a lens. Since the phases of the wavelets could not be correctly reproduced, an image of the atomic lattice could only be obtained for real-valued difraction amplitudes where the phase ambiguity of π (amplitudes can either be positive or negative) could be lited when the difraction pattern was positively biased, e.g., by a central heavy atom. Gabor followed this direction and envisioned a lensless approach where a coherently difracted electron wave from the 38-1

38-2

sample interferes with the undifracted wave. In this way, the phase information can be recorded in the form of a hologram on a photographic plate. he image reconstruction could then be performed as an analogue to Bragg’s x-ray microscope by illuminating the hologram with a suitable-scaled optical replica of the undifracted wave. An all-optical demonstration of this new principle was published by Gabor (1948). Its full potential was recognized more than a decade later when the irst optical lasers became available. X-ray holography appeared impracticable at that time due to the lack of suiciently temporally and spatially coherent x-ray sources, as well as of suitable x-ray optics and detectors (besides one successful image reconstruction of a thin wire from an x-ray difraction pattern using visible light by El-Sum and Kirkpatrick (1952) ) Meanwhile, with the advent of optical lasers with longer temporal coherence, Leith and Upnatnieks (1962, 1964) could circumvent the twin-image problem, which inlicted noise on the reconstruction in the Gabor geometry, by shit ing the reference beam of-axis at an angle to the object. hey further demonstrated three-dimensional reconstructions. he lower spatial frequencies in these holograms could be recorded with low resolution detectors. Based on the theoretical foundations and applications in Fourier optics and communication theory, VanderLugt (1964) generated Fourier transform holograms as masks for use in coherent optical processors. Fourier transform holography with x-rays was inally proposed by Stroke and Falconer (1964) to attain high-resolution imaging with x-rays. Simultaneously, Winthrop and Worthington (1965) outlined the principles of lensless x-ray microscopy base on successive Fourier transformation. Winthrop and Worthington (1966), Stroke et al. (1965a) demonstrated the feasibility of the above approach, and the implication of using a point source as a reference in FTH was addressed by Stroke et al. (1965b,c). Fourier transform holography was irst demonstrated at x-ray wavelengths by Aoki et al. (1972). In the late 1980s and early 1990s, x-ray holography surpassed for the irst time, the optical resolutions. Howells et al. (1987) recorded Gabor holograms using photoresist detectors at a resolution of 40 nm. Shortly thereater, McNulty et al. (1992) succeeded with Fourier transform holography-resolving features down to 60 nm length scales using a zone plate to generate a bright and a small reference source. In both experiments, the object reconstruction was performed with a computer. X-ray holography at atomic resolutions was demonstrated by Tegze and Faigel (1996) based on the inside-source concept at hard x-ray energies. his approach, however, is diicult to extend to larger length scales. With wavelengths of 5−0.5 nm, sot x-rays ill this gap to the optical regime although they are currently limited by the available coherent lux at third generation synchrotrons. With the birth of XFEL’s, these techniques will likely close the resolution gap and reach ≪ 10 nm resolution. his is comparable to transmission and scanning x-ray microscopes which achieve resolutions down to 15 nm using Fresnel zone plates Chao et al. (2005). Finally, holography is one technique among others that exploit the coherence properties for x-ray microscopy. Coherent dif ractive imaging based on iterative phase reconstruction has

Handbook of Nanophysics: Principles and Methods

rapidly evolved in parallel, since its irst experimental demonstration by Miao et al. (1999). Based on the Shannon–Whittaker sampling theorem, it is possible to iteratively recover the phases of dif raction patterns (Gerchberg and Saxton 1972, Fienup 1978, Marchesini et al. 2003) when recording the intensities at higher than the Nyquist frequency (oversampling). Applications range from the imaging of nanocrystals by Robinson et al. (2001), bacteria and cells by Miao et al. (2003) and Shapiro et al. (2005) to x-ray ptychography on extended samples with zone plates by hibault et al. (2008). It is beyond the scope of this article to describe those techniques and the reader shall be referred to detailed reviews on this subject, e.g., by Fienup (1982), van der Veen and Pfeifer (2004), Miao et al. (2008), and Marchesini et al. (2008).

38.2 Principles of Holography Holography is based on the interference of two waves: the object wave and a reference wave which is ideally a plane or a spherical wave. A suicient degree of coherence is required in order to have a constant phase relation in time between the two waves and therefore to observe an interference pattern or hologram on the detector. Holography or “whole writing” relects the capability to encode both the amplitude and the phase information of the object with a reference beam prior to its recording. he original wave front is reconstructed in a second step by illuminating the hologram with the reference beam. he back-propagation to the image plane can also be performed by computational methods when the reference information is known. A key element of holography is the absence of a lens in the hologram formation and object reconstruction. Since interference is a general phenomenon, holography can be applied to all forms of waves, e.g., to particle waves and acoustic waves, as long as their degree of coherence is suicient enough. Let the wave, S = |S|exp(iϕS), be emanating from the object and superposed with a reference wave, R = |R|exp(iϕR). hen the interference pattern recorded on a suitable detector yields I = | S + R |2 = SS * + RR * + SR * + RS * = | S |2 + | R |2 + 2 | S || R | cos(Δφ),

(38.1)

where the irst two terms contain the self-interference of object and reference. Obviously, the phase information is lost in the selfinterference terms while the cross-terms contain both the object and the reference phase. he phase information is encoded in the relative or holographic phase, Δϕ = ϕS − ϕR . he hologram recording and the wave reconstruction for Gabor, of-axis, and Fourier transform holography are illustrated in Figure 38.1. he image reconstruction is performed by re-illumination of the hologram with the reference wave. he following wave ields are generated: RI = R | S |2 + R | R |2 + | R |2 S + R2S * .

(38.2)

38-3

Soft X-Ray Holography for Nanostructure Imaging Hologram recording

Image reconstruction

In-line hologram

In-line hologram S*

S

S R

R (a)

Virtual Off-axis hologram S

Off-axis hologram S R

R

Real

S* Real

Virtual

(b) Fourier transform hologram S

Fourier transform hologram S Virtual

R

R Virtual

(c)

S*

FIGURE 38.1 (a) In-line hologram recording (Gabor 1948) using a coherent reference beam, R, illuminating the object S. he interference of the object and the reference wave is recorded in the holographic plane. Image reconstruction is performed by re-illumination of the hologram with the reference. Back-propagation of the dif racted wave R 2S gives the image of the object. Because of in-line geometry, reconstruction is prone to noise from the zero-order beam and the twin image. (b) Hologram recording in of-axis geometry spatially separates the zero-order beam and the twin images S and S* ater Leith and Upnatnieks (1964). (c) In Fourier transform holography, the reference is placed next to the object, generating Young’s double slit-like fringe pattern. Recording the hologram in the far ield of the object simpliies back-propagation by Fourier inversion.

Here, the zero-order beam becomes modulated by the irst two terms, |S|2 and |R|2, and would give upon recording speckle patterns but no image of the object or reference. he third term, S|R|2, is the reconstructed wave ield with its origin where the object was positioned. his virtual image comes with its twin, which is the last term, R 2S* in Equation 38.2. h is real image is the conjugate image of the object. he spatial separation of the zero-order beam and the twin images in an of-axis geometry, Leith and Upnatnieks (1964), which avoids background noise from the other waves reconstructed under illumination of the hologram (see Figure 38.1b).

38.2.1 Wave Propagation and Diffraction In the following, we formulate an expression relating an incident wave subjected to an object disturbance to the difracted wave ield. For this, we consider that the object consists of point scatterer distributed over a inite region, as illustrated in Figure 38.2, and is described by a scattering potential t(r). Let the incident plane wave ψ0(r) = A0 exp(ikz) with wave number k = 2π/λ, and amplitude A0 propagate along the optical axis z ≡ z′ and penetrate the disturbance such that the total wave ield emanating into the half space behind the object is formed by a superposition of the incident wave and the difracted wave. he propagation of the total wave is a formal solution of the inhomogeneous wave equation,

where the incident and the difracted wave are the solutions of the homogeneous and inhomogeneous parts respectively. We make use of Green’s function in order to obtain an integral equation for the total wave ield: ψ(r ′) = A0 exp(ikz ) +

ik 2π

∫∫∫ G(r − r ′)t(r)ψ(r)dr.

(38.3)

he retarded Green’s function of the wave equation is given by G(r − r′) = exp (ik|r − r′|)/|r − r′|, i.e., an outgoing spherical wave emitted from the inhomogeneity located at r. he amplitude of the emitted wave is proportional to the local scattering potential t(r) and the local amplitude of the wave ield ψ(r) at a given point. he difracted wave is therefore the integral over all emitted spherical waves emanating from the object’s region. he formulation of the wave ield (38.3) requires the knowledge of the local ields in the scattering region. A more manageable formulation can be found using the Born approximation where the impact of the local disturbance onto the incident wave ield is negligible and ψ(r) ∼ − ψ0(r). his condition is valid for large wave numbers k or weak-scattering potentials as is the case for x-rays. Because each point of the object sees the same incident wave ield, the approximation further ignores multiple scattering scenarios and allows the projection of the scattering potential onto a single difraction plane at z = 0 normal to the propagation direction of the

38-4

Handbook of Nanophysics: Principles and Methods

y΄ y

y

r΄ – r

. . .

x΄

x z

z Object region

Object region (a)

Diffraction plane Detector plane

(b)

FIGURE 38.2 (a) Schematic of the dif raction of an incident wave ield by an object. (Forward scattering is here considered.) (b) Geometry of the wave propagation.

undifracted wave such that t(r) → t(x, y) is the transmittance of the object. he integral expression for the total wave ield becomes ψ(r ′) = A0 exp(ikz ) +

ik 2π

∫∫∫

exp(ik | r − r ′ |) A0t (x , y )dr. | r − r′ |

(38.4)

x 2 + y 2 x ′2 + y ′2 xx ′ + yy ′ + −2 2 2 z z z2

⎛ x 2 + y 2 x ′ 2 + y ′ 2 xx ′ + yy ′ ⎞ ≈ z ⎜1 + + − ⎟⎠ , 2z 2 2z 2 z2 ⎝

(38.5)

and u y =

y′ . λz

We ind for the near ield

×

⎛

∫∫ t(x, y)exp ⎜⎝ iπ

x2 + y2 ⎞ exp −2πi ux x + u y y λz ⎟⎠

( {

⎛

})dxdy, (38.9)

where the dif racted wave in the plane at a given distance z is simply given by the Fourier transform of the exit wave multiplied by a phasor representing a i nite curvature of the superposed wavelets. As a consequence, the interference pattern is rapidly evolving as a function of distance in the Fresnel regime. In the far ield of a small lateral object, the phasor becomes unity because zλ >> (x2 + y 2). he dif racted wave then reduces to a simple Fourier transform of the exit wave:

×

∫∫ t(x, y)exp(−2πi{u x + u y})dxd x

∝ F {t (x , y )},

ψ(x ′, y ′, z ) = A(x ′, y ′, z )

∫∫ t(x, y)exp ⎜⎝ ik

(38.8)

ψ far (ux , u y , z ) = A(λzux , λzu y , z )

and omit the unscattered wave (“direct beam”) to obtain the diffracted wave front

×

x′ λz

ψ near (ux , u y , z ) = A(λzux , λzu y , z )

Here, ψe(x, y) = A0t(x, y) can be viewed as the wave front that exits the object at z = 0. According to the Huygen–Fresnel principle, this new wave front is formed by a superposition of wavelets given by the object’s transmittance. Considering only forward and small-angle scattering in Figure 38.2b, (38.4) can be further simpliied deriving the Fresnel and Fraunhofer approximations. For this, we approximate | r − r′ | = z 1 +

ux =

x2 + y2 ⎞ xx ′ + yy ′ ⎞ ⎛ exp ⎜ −ik ⎟⎠ dxdy , ⎝ 2z ⎟⎠ z

(38.6)

y

(38.10)

where F {} is the Fourier operator. In the Fraunhofer regime, the dif racted wave is a composition of plane waves emanating at small difraction angles to the propagation direction.

where the prefactor is given as A(x ′, y ′, z ) = A0

⎛ x ′2 + y ′2 ⎞ ik exp(ikz ) exp ⎜ ik . 2πz 2z ⎟⎠ ⎝

38.2.2 Optical Constants (38.7)

he Fresnel integral (38.6) can be further simpliied with k = 2π/λ and by introducing spatial frequencies:

he transmittance of the object depends on its index of refraction: n(ω) = 1 − δ(ω) + iβ(ω)

(38.11)

38-5

Soft X-Ray Holography for Nanostructure Imaging

where ϕ = (2πd/λ)δ and μ = (2πd/λ)β are the phase-shiting and the attenuating sample properties for the incoming wave ield, respectively. In this weak contrast limit of the sample, the transmittance depends linearly on the optical constants.

where β represents the absorptive and δ the refractive properties of the material. In the x-ray regime, the atomic scattering factors f 1 = Z + f ′(ω) and f2 = f ′′(ω) in units of number of electrons are commonly used to describe the interaction of x-rays with matter. Neglecting polarization effects and magnetic scattering, there exists a simple relation between the optical constants and the atomic scattering factors, see e.g., Attwood (1999):

δ(ω) =

r0 λ 2 r λ2 ρf1 (ω) and β(ω) = 0 f 2 (ω), 2π 2π

38.2.3 Gabor X-Ray Holography Rogers (1950) draws an analogy between Gabor holograms and generalized zone plates. Suppose a reference point source R, with wavelength λ, is placed at a distance q to a holographic plane, cf. Figure 38.3a. Difraction of the reference wave from a point object at the position S on the optical axis creates a rotationally symmetric hologram, where the radial distribution is given by the interference 2|S||R|cos(Δϕ) (Equation 38.1). he phase diference, Δϕ, is given by the diferent path lengths the wavelet has to travel before reaching point H, i.e., Δϕ = (2π/λ)Δl. By comparing the two distances R → H and R → S → H this path diference yields

(38.12)

where Z is the number of atomic electrons r0 is the classical-electron radius λ is the x-ray wavelength ρ is the atomic number density

(

Δl = r 2 + q 2 − q − p + r 2 + p2

For simplicity, the notation of optical constants is used in the following. In the sot x-ray regime, the optical constants δ and β are of the order of ≃10−3, while in the hard x-ray regime the refractive part δ ≈ 10−6 is several magnitudes larger than the absorption. Hence, the index of refraction is n ≈ 1. Assuming that the object has a total thickness d along the propagation direction of the incoming wave in Equation 38.6, the transmittance can be expressed as ⎛ d ⎞ t (x , y ) = exp ⎜ −k {iδ(x , y , z ) + β(x , y , z )} dz ⎟ . ⎜⎝ ⎟⎠ 0

∫

2

(38.15)

Constructive interference can be found when cos(Δϕ) = 1 and the path diference equals nλ, where n = 1, 2, 3,.… Using Equation 38.15, the “point” hologram results in a concentric ring pattern with the radii rn = 2nf λ

where

1 1 1 = − , f q p

(38.16)

which follows the construction of a zone plate with the only difference that the radial fringes have a sinusoidal envelope while a Fresnel zone plate is a binary or “digital hologram” of a point object. he sinusoidal intensity distribution of the hologram therefore difracts the reference beam only up to irst orders resembling the virtual image S and its conjugate image S* at a distance f which is analogous to zone plates an efective focal length in the lens Equation 38.16. he hologram of a more complex object is an agglomerate of “point” holograms formed from the secondary wavelets

(38.13)

Since we considered the Born approximation to be valid and the optical constants to be δ, β