Fundamentals of Solid-State Electronics
506 91 257KB
English Pages 1014 Year 1991
Table of contents :
1 Electrons, Bonds, Bands and Holes......Page 3
2 Homogeneous Semiconductor at Equilibrium......Page 153
3 Drift, Diffusion, Generation, Recombination, Trapping and Tunneling......Page 233
4 Metal-Oxide Semidonductor Capacitor (MOSC)......Page 313
5 P/N and Other Junction Diodes ......Page 383
6 MOSC and Other Field-Effect Transistor......Page 523
7 Bipolar Junction Transistor and Other Bipolar Transistor Devices......Page 703
A Notational Convention ......Page 994
Index ......Page 999
Author ......Page 1013
1 Electrons, Bonds, Bands and Holes......Page 3
2 Homogeneous Semiconductor at Equilibrium......Page 153
3 Drift, Diffusion, Generation, Recombination, Trapping and Tunneling......Page 233
4 Metal-Oxide Semidonductor Capacitor (MOSC)......Page 313
5 P/N and Other Junction Diodes ......Page 383
6 MOSC and Other Field-Effect Transistor......Page 523
7 Bipolar Junction Transistor and Other Bipolar Transistor Devices......Page 703
A Notational Convention ......Page 994
Index ......Page 999
Author ......Page 1013
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